TW200615691A - Chemically amplified resist composition and method for forming resist pattern - Google Patents

Chemically amplified resist composition and method for forming resist pattern

Info

Publication number
TW200615691A
TW200615691A TW094121677A TW94121677A TW200615691A TW 200615691 A TW200615691 A TW 200615691A TW 094121677 A TW094121677 A TW 094121677A TW 94121677 A TW94121677 A TW 94121677A TW 200615691 A TW200615691 A TW 200615691A
Authority
TW
Taiwan
Prior art keywords
chemically amplified
resist composition
forming
amplified resist
resist pattern
Prior art date
Application number
TW094121677A
Other languages
Chinese (zh)
Other versions
TWI286665B (en
Inventor
Hiroshi Shimbori
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200615691A publication Critical patent/TW200615691A/en
Application granted granted Critical
Publication of TWI286665B publication Critical patent/TWI286665B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Emergency Medicine (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

A chemically amplified resist composition includes a resin component (A) which displays changed alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and a high boiling point solvent component (X) whose boiling point is 220 DEG C or higher.
TW094121677A 2004-07-01 2005-06-28 Chemically amplified resist composition and method for forming resist pattern TWI286665B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004195673A JP4545500B2 (en) 2004-07-01 2004-07-01 Chemically amplified resist composition and resist pattern forming method

Publications (2)

Publication Number Publication Date
TW200615691A true TW200615691A (en) 2006-05-16
TWI286665B TWI286665B (en) 2007-09-11

Family

ID=35782635

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121677A TWI286665B (en) 2004-07-01 2005-06-28 Chemically amplified resist composition and method for forming resist pattern

Country Status (4)

Country Link
JP (1) JP4545500B2 (en)
CN (1) CN1965265B (en)
TW (1) TWI286665B (en)
WO (1) WO2006003824A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4762630B2 (en) 2005-08-03 2011-08-31 東京応化工業株式会社 Resist composition and resist pattern forming method
JP4937594B2 (en) 2006-02-02 2012-05-23 東京応化工業株式会社 Positive resist composition for forming thick resist film, thick resist laminate, and resist pattern forming method
JP4954576B2 (en) * 2006-03-15 2012-06-20 東京応化工業株式会社 Thick film resist laminate, manufacturing method thereof, and resist pattern forming method
JP2010240868A (en) * 2009-04-01 2010-10-28 Canon Inc Inkjet recording head and manufacturing method thereof
JP2011170151A (en) * 2010-02-19 2011-09-01 Sumitomo Chemical Co Ltd Resist composition

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3692595B2 (en) * 1996-02-16 2005-09-07 Ｊｓｒ株式会社 Radiation sensitive resin composition
JP3057010B2 (en) * 1996-08-29 2000-06-26 東京応化工業株式会社 Positive resist composition and method for forming resist pattern
KR100245410B1 (en) * 1997-12-02 2000-03-02 윤종용 Photosensitive polymer and chemically amplified resist composition using the same
JP3546913B2 (en) * 1997-06-26 2004-07-28 信越化学工業株式会社 Chemically amplified positive resist material
JP3798552B2 (en) * 1998-04-23 2006-07-19 東京応化工業株式会社 Chemically amplified photoresist
JP2001056558A (en) * 1999-08-20 2001-02-27 Tokyo Ohka Kogyo Co Ltd Chemical amplification type positive type resist composition and resist pattern forming method using same
JP3659624B2 (en) * 2000-05-01 2005-06-15 東京応化工業株式会社 Positive photoresist composition, substrate with photosensitive film and method for forming resist pattern
JP2002091004A (en) * 2000-09-20 2002-03-27 Fuji Photo Film Co Ltd Positive photoresist composition
JP2002196496A (en) * 2000-12-27 2002-07-12 Fuji Photo Film Co Ltd Positive type photoresist composition
JP4135346B2 (en) * 2001-01-19 2008-08-20 住友化学株式会社 Chemically amplified positive resist composition
JP4410977B2 (en) * 2002-07-09 2010-02-10 富士通株式会社 Chemically amplified resist material and patterning method using the same
JP2005257884A (en) * 2004-03-10 2005-09-22 Fuji Photo Film Co Ltd Positive resist composition and pattern forming method

Also Published As

Publication number Publication date
JP2006018017A (en) 2006-01-19
CN1965265A (en) 2007-05-16
WO2006003824A1 (en) 2006-01-12
CN1965265B (en) 2010-06-30
JP4545500B2 (en) 2010-09-15
TWI286665B (en) 2007-09-11

Similar Documents

Publication Publication Date Title
EP1795960A3 (en) Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition
TW200627071A (en) Resist composition for immersion exposure and method for forming resist pattern
TW200727080A (en) Positive resist composition and pattern making method using the same
TW200715058A (en) Positive resist composition and pattern-forming method using the same
TW200734822A (en) Positive resist composition and pattern forming method using the same
TW200801810A (en) Resist composition for immersion lithography, and method for forming resist pattern
TW200606589A (en) Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
TW200604743A (en) Positive photoresist composition
TW200613918A (en) Evaluation method of resist composition
TW200641536A (en) Positive resist composition and pattern-forming method using the same
TW200619850A (en) Resist composition and resist pattern forming method
EP1628159A3 (en) Chemical amplification resist composition and pattern-forming method using the same
TW200722926A (en) Positive resist composition for immersion exposure and pattern-forming method using the same
BR0317191B1 (en) method of producing a non-FDA-compliant extractable bass film, actinic radiation curable aqueous homogeneous composition and actinic radiation curable aqueous homogeneous paint composition
WO2002042845A3 (en) Photoacid generators and photoresists comprising same
TW200628984A (en) Positive resist composition and pattern-forming method using the same
TW200604761A (en) Rinse and resist patterning process using the same
EP1703322A3 (en) Positive resist composition and pattern forming method using the resist composition
TW200728921A (en) Positive resist composition and pattern formation method using the positive resist composition
TW200606581A (en) A chemically amplified positive resist composition, a haloester derivative and a process for producing the same
EP2329320A4 (en) Positive resist composition for immersion exposure and pattern forming method
TW200615691A (en) Chemically amplified resist composition and method for forming resist pattern
TW200643631A (en) Positive resist composition and pattern forming method using the same
TW200641522A (en) Positive resist composition, method for forming resist pattern and compound
TW200632558A (en) Positive resist composition and method for forming resist pattern

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees