TW200614366A - Plasma processing system - Google Patents

Plasma processing system

Info

Publication number
TW200614366A
TW200614366A TW094120526A TW94120526A TW200614366A TW 200614366 A TW200614366 A TW 200614366A TW 094120526 A TW094120526 A TW 094120526A TW 94120526 A TW94120526 A TW 94120526A TW 200614366 A TW200614366 A TW 200614366A
Authority
TW
Taiwan
Prior art keywords
electrode unit
processing system
plasma processing
plasma
electrode
Prior art date
Application number
TW094120526A
Other languages
Chinese (zh)
Other versions
TWI291727B (en
Inventor
Masaru Sugata
Akira Itani
Akihito Isobe
Kenichi Shomura
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200614366A publication Critical patent/TW200614366A/en
Application granted granted Critical
Publication of TWI291727B publication Critical patent/TWI291727B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A plasma processing system comprising a processing chamber (10), first and second electrode units (5, 11) provided in the processing chamber (10) and arranged opposite to each other, and a quartz plate (13) provided on the second electrode unit (11) side of the first electrode unit (5) for protecting the first electrode part (5). The plasma processing system plasma-processes an article to be processed which is provided on the first electrode unit (5) side of the second electrode unit (11) by generating plasma between the first electrode unit (5) and the second electrode unit (11) and exciting a reaction gas in the processing chamber (10). The quartz plate (13) has a roughened surface on the second electrode unit (11) side.
TW094120526A 2004-07-20 2005-06-21 Plasma processing system TWI291727B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004212084 2004-07-20

Publications (2)

Publication Number Publication Date
TW200614366A true TW200614366A (en) 2006-05-01
TWI291727B TWI291727B (en) 2007-12-21

Family

ID=35785015

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120526A TWI291727B (en) 2004-07-20 2005-06-21 Plasma processing system

Country Status (6)

Country Link
US (1) US20070181256A1 (en)
JP (1) JPWO2006008889A1 (en)
KR (1) KR100845219B1 (en)
CN (1) CN100440452C (en)
TW (1) TWI291727B (en)
WO (1) WO2006008889A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3029445B1 (en) * 2014-12-09 2017-09-29 Fibroline France INSTALLATION FOR IMPREGNATING A POROUS SUPPORT COMPRISING OPTIMIZED COATED ELECTRODES
JP2017126717A (en) * 2016-01-15 2017-07-20 東京エレクトロン株式会社 Surface treatment method of placing table, placing table and plasma processing device
JP6870951B2 (en) * 2016-10-07 2021-05-12 積水化学工業株式会社 Semiconductor manufacturing method
KR102124766B1 (en) 2019-12-31 2020-06-19 (주)삼양컴텍 Plasma processing apparatus and manufacturing method of the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1203089B (en) * 1976-03-03 1989-02-15 Int Plasma Corp PROCEDURE AND EQUIPMENT TO PERFORM CHEMICAL REACTIONS IN THE REGION OF THE LUMINESCENT DISCHARGE OF A PLASMA
JPH02298024A (en) * 1989-05-12 1990-12-10 Tadahiro Omi Reactive ion etching apparatus
JPH06196421A (en) * 1992-12-23 1994-07-15 Sumitomo Metal Ind Ltd Plasma device
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
JPH08250488A (en) * 1995-01-13 1996-09-27 Seiko Epson Corp Device and method for plasma treatment
JP3535276B2 (en) * 1995-07-28 2004-06-07 株式会社半導体エネルギー研究所 Etching method
US6007673A (en) * 1996-10-02 1999-12-28 Matsushita Electronics Corporation Apparatus and method of producing an electronic device
JP3251215B2 (en) * 1996-10-02 2002-01-28 松下電器産業株式会社 Electronic device manufacturing apparatus and electronic device manufacturing method
US6155200A (en) * 1997-07-08 2000-12-05 Tokyo Electron Limited ECR plasma generator and an ECR system using the generator
KR100305527B1 (en) * 1998-07-09 2001-11-01 니시무로 타이죠 Method and apparatus for manufactu ring semiconductor device
JP2000164565A (en) * 1998-11-26 2000-06-16 Sony Corp Semiconductor manufacturing apparatus
JP2001185542A (en) * 1999-12-27 2001-07-06 Hitachi Ltd Plasma processor and plasma processing method using the same
JP2001250814A (en) * 2000-03-06 2001-09-14 Hitachi Ltd Plasma treatment device
US6677549B2 (en) * 2000-07-24 2004-01-13 Canon Kabushiki Kaisha Plasma processing apparatus having permeable window covered with light shielding film
JP3854909B2 (en) * 2002-08-06 2006-12-06 株式会社日立製作所 Plasma processing equipment
JP4319514B2 (en) * 2002-11-29 2009-08-26 株式会社日立ハイテクノロジーズ Plasma processing apparatus having high frequency power supply with sag compensation function
JP2004200307A (en) * 2002-12-17 2004-07-15 Tokyo Electron Ltd Plasma treatment device

Also Published As

Publication number Publication date
TWI291727B (en) 2007-12-21
KR20070032687A (en) 2007-03-22
KR100845219B1 (en) 2008-07-10
JPWO2006008889A1 (en) 2008-05-01
US20070181256A1 (en) 2007-08-09
CN1969378A (en) 2007-05-23
CN100440452C (en) 2008-12-03
WO2006008889A1 (en) 2006-01-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees