CN100440452C - Plasma processing system - Google Patents
Plasma processing system Download PDFInfo
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- CN100440452C CN100440452C CNB2005800191722A CN200580019172A CN100440452C CN 100440452 C CN100440452 C CN 100440452C CN B2005800191722 A CNB2005800191722 A CN B2005800191722A CN 200580019172 A CN200580019172 A CN 200580019172A CN 100440452 C CN100440452 C CN 100440452C
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- 238000012545 processing Methods 0.000 title claims abstract description 24
- 239000010453 quartz Substances 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000009832 plasma treatment Methods 0.000 claims description 11
- 238000005422 blasting Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 19
- 239000007795 chemical reaction product Substances 0.000 description 17
- 239000002245 particle Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 208000019901 Anxiety disease Diseases 0.000 description 2
- 230000036506 anxiety Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
Abstract
A plasma processing system comprising a processing chamber (10), first and second electrode units (5, 11) provided in the processing chamber (10) and arranged opposite to each other, and a quartz plate (13) provided on the second electrode unit (11) side of the first electrode unit (5) for protecting the first electrode part (5). The plasma processing system plasma-processes an article to be processed which is provided on the first electrode unit (5) side of the second electrode unit (11) by generating plasma between the first electrode unit (5) and the second electrode unit (11) and exciting a reaction gas in the processing chamber (10). The quartz plate (13) has a roughened surface on the second electrode unit (11) side.
Description
Technical field
[0001] the present invention relates to a kind of plasma processing apparatus.
Background technology
[0002] in the manufacturing process of the such electronic device of LCD, semiconductor device, dry etching technology is the method that is widely used for forming trickle processing graphic pattern.
[0003] under this dry etching technology, both required to carry out etching and uniformity is very high with high aspect ratio, high etch rates and high selectivity, also require to suppress the generation of particle (atomic polluter) simultaneously.
[0004] described aspect ratio is to be formed on the degree of depth of the pattern on the substrate and the ratio of width by etching.Described selection is than the ratio of etch-rate that is etch-rate, etching mask material and the bottom material of etched material.
[0005] for example, under the very low situation of etch uniformity, in the pattern that is formed on by etching on the substrate, owing to etching and undercut took place for the difference of etch-rate, this just might cause very big influence to the manufacturing process after this.
[0006] under the situation of utilizing etching to form to be parallel to each other a plurality of wiring patterns that extend,, will become the reason of short circuit, and the anxiety of the manufacturing qualification rate decline that causes product is arranged if described particle is present between each wiring pattern.
[0007] device for dry etching is one of in the plasma processing apparatus, can accomplish according to its structure: by reacting gas is imported in the process chamber, produce plasma with high frequency, this reacting gas of microwave equal excitation, generate the high atom of chemical activity, molecule (reaction kind).And the dry ecthing in this device for dry etching is performed such, and allows the reaction kind and the etched material that are generated by plasma react, and makes this reaction product become escaping gas, by vacuum pumping system this escaping gas is discharged to the outside again.
[0008] in recent years, be included in the device for dry etching that produces the plasma source block of high-density plasma under the high vacuum state and be able to extensive use.A lot of plasma source blocks all are to constitute like this, and promptly this plasma source is managed the electromagnetic wave importing indoor everywhere from the outside by quartz member.
[0009] importing in the device for dry etching of the such structure of electromagnetic wave by quartz member, because can the attachment reaction product on the surface of quartz member, institute be so that have because this reaction product falls the anxiety that produces the interior particle of pollution process chamber.
[0010] semiconductor-fabricating device that the generation of particle is reduced is disclosed in the patent documentation 1.
[0011] Fig. 4 is the summary construction diagram of patent documentation 1 disclosed semiconductor-fabricating device 130.
[0012] this semiconductor-fabricating device 130 is a kind of high-density plasma Etaching devices, to import in the process chamber 110 by a quartzy day plate 113 at the electromagnetic wave that TCP (Transformer Coupled Plasma) electrode 122 produces, excite from gas supply part 124 plasma to be reacted, wafer 112 is handled for the reacting gas that comes.And in the semiconductor-fabricating device 130 of this structure, plate 113 tops were furnished with infrared ray heater 123 far away in quartzy day, utilized the radiant heat of this infrared ray heater 123 far away to heat quartzy day plate 113.
Patent documentation 1 spy opens the 2000-164565 communique
Summary of the invention
The problem that-invention will solve-
[0013] still, because above-mentioned conventional semiconductor manufacturing installation 130 is the structures that will heat quartzy day plate 113, institute is so that think that reaction product is difficult to be attached on the quartzy day plate 113.But be necessary to be provided with the heater means that infrared ray heater 123 far away is used as heating quartzy day plate 113.
[0014] in recent years, in this field of liquid crystal indicator, the maximization of glass substrate is in development hastily, and this is a plasma processing uniformity with regard to the etch uniformity that requires to improve in the substrate.
[0015] the present invention researchs and develops out in order to address the above problem just, and its purpose is: in plasma processing apparatus, both easily suppressed the generation of particle, and carried out plasma treatment simultaneously again equably.
In order to the technical scheme of dealing with problems
[0016] the present invention in the plasma processing apparatus with first electrode part and second electrode part, makes the surface near second electrode part, one side of the baffle of protection first electrode part form matsurface.
[0017] plasma processing apparatus involved in the present invention comprises: process chamber, be arranged in the described process chamber and standing facing each other mutually first electrode part and second electrode part that are provided with, be arranged on described first electrode part close described second electrode part a side and protect the baffle of described first electrode part.By between described first electrode part and second electrode part, producing plasma, excite the reacting gas in the described process chamber, come the object being treated near a side of first electrode part that is arranged on described second electrode part is carried out plasma treatment.The surface of close described second electrode part, one side of described baffle forms matsurface.
[0018] according to described structure, because the surface near second electrode part, one side of baffle forms matsurface, the heat absorption rate of baffle improves.So, baffle just is heated easily, and around baffle, the reaction product that is produced when the etching object being treated volatilizees easily, so reaction product is difficult to attached on the baffle.
[0019] same, because the surface near second electrode part, one side of baffle forms matsurface, so the surface area near second electrode part, one side of baffle increases.Therefore, even just in case adhere to reaction product, also the amount of this reaction product that can may adhere to because of institute increases and inhibition falls the generation of caused particle owing to reaction product.
[0020] same; because the surface near second electrode part, one side of baffle forms matsurface; so the molecule of the reacting gas that generates owing to plasma, collide the surface that forms matsurface of baffle after, be distributed to all angles again and rebound.Therefore, owing to become evenly, so that plasma treatment just becomes is very even in the distribution of process chamber reaction gases.
[0021] so, just both suppress the generation of particle easily, carried out plasma treatment simultaneously again equably.
[0022] need mention, be to put down in writing like this in the patent documentation 1, as shown in Figure 4, infrared ray heater 123 1 sides close far away of quartzy day plate 113, just the surface corresponding to TCP electrode 122 1 sides of first electrode part of plasma processing apparatus of the present invention has been applied in blasting treatment, the same with the present invention, the heat absorption rate of quartzy day plate 113 improves, and can reduce the generation of particle.Yet in plasma processing apparatus of the present invention, because make the surface near second electrode part, one side of baffle form matsurface, so the generation of particle is suppressed, it is even that plasma treatment becomes.
[0023] described baffle can be made by quartz or pottery.
[0024] according to above structure, first electrode part is protected by quartz plate or ceramic wafer.Here, because quartz plate and ceramic wafer are the very high materials of plasma resistant, so first electrode part is effectively protected by quartz plate or ceramic wafer.
[0025] described first electrode part can comprise: the upper electrode of making by electric conducting material and be arranged on this upper electrode and described baffle between dielectric.
[0026] according to described structure, because constitute the dielectric of first electrode part, so suppressed because the deterioration that the plasma that is produced during etching causes by baffle protection.Therefore, the effect that the electromagnetic wave of dielectric is spread is equably kept.
[0027] surface of close described second electrode part, one side of described baffle can form by blasting treatment.
[0028] according to above structure, the surface of baffle is easy to form matsurface.
[0029] described plasma treatment can be a dry etch process.
[0030] according to described structure, it is very even that dry etch process becomes.
The effect of invention
[0031] in the plasma processing apparatus of the present invention, protect the surface near second electrode part, one side of the baffle of first electrode part to form matsurface.Therefore, the heat absorption rate of baffle improves, and reaction product also just is difficult to attached on the baffle; Increasing of baffle near the surface area of second electrode part, one side, the amount of the reaction product that may adhere to increases, the situation that produces particle so be difficult to occur reaction product to fall; The molecule of the reacting gas that is generated by plasma is distributed to all angles and rebounds, so that plasma treatment becomes is even.So, just can either easily suppress the generation of particle, can carry out plasma treatment equably again simultaneously.
The simple declaration of accompanying drawing
[0032] Fig. 1 is the summary pie graph of the related device for dry etching of embodiments of the invention 30.
Fig. 2 is the ideograph that display surface forms the molecule activity situation among the quartz plate 13a of minute surface.
Fig. 3 is the ideograph that display surface forms the molecule activity situation among the quartz plate 13b of matsurface.
Fig. 4 is the summary pie graph of existing device for dry etching 130.
Symbol description
[0033] 5-first electrode part; The 10-process chamber; 11-second electrode part; 12-treatment substrate (object being treated); 13,13a, 13b-quartz plate (baffle); The 14-dielectric; The 15-upper electrode; The 25-plasma; 30-device for dry etching (plasma processing apparatus).
Embodiment
[0034] below, embodiments of the present invention will be described in detail with reference to the accompanying drawings.In following each embodiment, describe with the device for dry etching of ICP (Ion Coupled Plasma) pattern example as plasma processing apparatus.But the present invention is not limited to following embodiment, and other dry ecthing patterns beyond the ICP pattern also are suitable for.And the present invention not only is suitable for device for dry etching, waits also suitable to sputter equipment, CVD (ChemicalVapor Deposition) device that carries out plasma treatment.
[0035] below, with reference to the related device for dry etching 30 of figure 1 explanation embodiments of the invention.Here, Fig. 1 is the summary pie graph of device for dry etching 30 of the present invention.
[0036] this device for dry etching 30 comprises: process chamber 10, exhaust apparatus 20, high frequency electric source 16 and 18.
[0037] process chamber 10 inside comprise: second electrode part 11 that first electrode part 5, relative first electrode part 5 are provided with.
[0038] first electrode part 5 comprises: the upper electrode 15 that is formed by conductive materials such as metals, be arranged on the dielectric 14 that second electrode part, 11 1 sides are made by pottery.
[0039] in the side near second electrode part 11 of this first electrode part 5, is provided with quartz plate 13 as baffle.Need mention, the material of baffle can also be a pottery except described quartz.
[0040] surface near second electrode part, 11 1 sides of quartz plate 13 forms matsurface by blasting treatment.Here, the surface roughness that forms the quartz plate 13 of matsurface for example is that arithmetic mean roughness Ra is about 5 μ m.
[0041] second electrode part 11 constitutes: treatment substrate 12 is absorbed and fixed at the side near first electrode part 5 of second electrode part 11 by electrostatic chuck etc.
The wall of [0042] first electrode part 5, second electrode part 11, process chamber 10 is connected on the cooling device (not shown)s such as water-cooled cooler, can control temperature.
[0043] first electrode part 5 is connected by capacitor 17 with high frequency electric source 16, and second electrode part 11 is connected by capacitor 19 with high frequency electric source 18.High frequency electric source 16,18 and process chamber 10 ground connection.
[0044] then, the working condition to the aforesaid device for dry etching 30 of structure describes.
[0045] at first, treatment substrate 12 is moved in the process chamber 10 as object being treated, be put on second electrode part 11.
[0046] then, will be from high frequency electric source 16 (frequency: 13.56MHz) and 18 (frequency: High frequency power 6.0MHz) is supplied with first electrode part 5 and second electrode part 11 respectively, simultaneously reacting gas is fed in the process chamber 10 by gas introduction tube road (not shown), dielectric 14 and quartz plate 13.
[0047] so, electromagnetic wave just is directed in the process chamber 10 by quartz plate 13 and dielectric 14, and reacting gas is excited, and produces highdensity plasma 25.Then, etched material is by the chemical reaction of the molecule of the high reacting gas of the etched material on the treatment substrate 12 and chemical activity and etched.
[0048] at this moment, because the surface near second electrode part, 11 1 sides of quartz plate 13 forms matsurface, the heat absorption rate of quartz plate 13 improves.Therefore, quartz plate 13 is heated easily, and around quartz plate 13, the reaction product that is produced when the etched material of etching volatilizees easily, and reaction product just is difficult to be attached on the quartz plate 13.
[0049] same, as mentioned above, because the surface near second electrode part, 11 1 sides of quartz plate 13 forms matsurface, so the surface area near second electrode part, 11 1 sides of quartz plate 13 increases.Therefore, even, also can increase because of the amount of this reaction product that may adhere to and suppress because reaction product falls the generation of caused particle just in case adhere to reaction product.
[0050] same; as mentioned above; because quartz plate 13 forms matsurface near the surface of second electrode part, 11 1 sides; so the molecular collision of the reacting gas of the high chemical activity that generates owing to plasma 25 behind the surface that forms matsurface of baffle, is distributed to all angles and rebounds.
[0051] here, Fig. 2 and Fig. 3 show, do not have blasting treatment and the ideograph of the molecule activity situation that causes.Fig. 2 does not carry out blasting treatment, and the surface forms the ideograph under the situation of quartz plate 13a of minute surface.Fig. 3 has carried out blasting treatment, and the surface forms the ideograph under the situation of quartz plate 13b of matsurface.
[0052] particularly, as shown in Figure 2, under the situation that is the surface quartz plate 13a that forms minute surface, the molecule 21 of reacting gas carries out the incidence angle reflection consistent with angle of reflection on the surface of quartz plate 13a.On the other hand, as shown in Figure 3, form on the surface under the situation of quartz plate 13b of matsurface, the molecule 21 of reacting gas is distributed to after all angles bounce-back again and returns behind the surface collision of quartz plate 13b.
[0053] so, form on the surface under the situation of quartz plate 13b of matsurface, the molecule 21 of reacting gas disperses, and becomes even in the distribution of process chamber 10 reaction gases.So etched uniformity improves.
[0054] as mentioned above, the generation of particle can either be suppressed at an easy rate, also etching can be carried out equably simultaneously.
[0055] next, the concrete experiment of doing is described.
[0056] embodiments of the invention utilize the device for dry etching the same with described embodiment that treatment substrate is carried out dry ecthing, utilize again the contact pin type surfagauge to this surface of the treatment substrate of dry ecthing (13 place) measure.
[0057] below, the comparative example of embodiments of the invention is described.
[0058] particularly, utilize to comprise that the surface does not form the device for dry etching dry etch process substrate of the quartz plate of matsurface, utilize again the contact pin type surfagauge to this surface of the treatment substrate of dry ecthing (13 place) measure.
[0059] result is as follows.
[0060] among the embodiment,, be 16.4nm (minimum value) in minimum etched part, so etch uniformity becomes 9.8% because apparent height is 20.0nm (maximum) in maximum etch portion.
[0061] here, etch uniformity is the numerical value that utilizes following formula to calculate.
[0062] etch uniformity=(maximum-minimum value)/(maximum)+(minimum value) * 100 need be mentioned, and the value of this etch uniformity is more little, and etch uniformity is just good more.
[0063] comparative example because apparent height is 19.8nm (maximum) in maximum etch portion, is 15.2nm (minimum value) in minimum etched part, so etch uniformity becomes 13.2%.
[0064] so, because in the embodiment that uses device for dry etching of the present invention, etch uniformity is 9.8%, in contrast to this, etch uniformity is 13.2% in the ratio example, so can confirm according to the present invention: etch uniformity has improved.
Industrial applicibility
[0065] in sum, because processing, applying plasma of the present invention become evenly, so this Bright useful to device for dry etching.
Claims (4)
1; a kind of plasma processing apparatus; comprise: process chamber; be arranged in the described process chamber and first electrode part and second electrode part that are standing facing each other mutually and be provided with; be arranged on described first electrode part close described second electrode part a side and protect the baffle of described first electrode part; by between described first electrode part and second electrode part, producing plasma; excite the reacting gas in the described process chamber; come to carry out plasma treatment near the object being treated of a side of first electrode part to being arranged on described second electrode part; it is characterized in that
The surface of close described second electrode part, one side of described baffle forms matsurface,
Described first electrode part comprises: the upper electrode of making by electric conducting material and be arranged on this upper electrode and described baffle between and the dielectric that forms by pottery.
2, plasma processing apparatus according to claim 1 is characterized in that:
Described baffle is made by quartz or pottery.
3, plasma processing apparatus according to claim 1 is characterized in that:
The surface of close described second electrode part, one side of described baffle forms by blasting treatment.
4, plasma processing apparatus according to claim 1 is characterized in that:
Described plasma treatment is a dry etch process.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP212084/2004 | 2004-07-20 | ||
| JP2004212084 | 2004-07-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1969378A CN1969378A (en) | 2007-05-23 |
| CN100440452C true CN100440452C (en) | 2008-12-03 |
Family
ID=35785015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005800191722A Expired - Fee Related CN100440452C (en) | 2004-07-20 | 2005-06-10 | Plasma processing system |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20070181256A1 (en) |
| JP (1) | JPWO2006008889A1 (en) |
| KR (1) | KR100845219B1 (en) |
| CN (1) | CN100440452C (en) |
| TW (1) | TWI291727B (en) |
| WO (1) | WO2006008889A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3029445B1 (en) * | 2014-12-09 | 2017-09-29 | Fibroline France | INSTALLATION FOR IMPREGNATING A POROUS SUPPORT COMPRISING OPTIMIZED COATED ELECTRODES |
| JP2017126717A (en) * | 2016-01-15 | 2017-07-20 | 東京エレクトロン株式会社 | Surface treatment method of placing table, placing table and plasma processing device |
| JP6870951B2 (en) * | 2016-10-07 | 2021-05-12 | 積水化学工業株式会社 | Semiconductor manufacturing method |
| KR102124766B1 (en) | 2019-12-31 | 2020-06-19 | (주)삼양컴텍 | Plasma processing apparatus and manufacturing method of the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5272417A (en) * | 1989-05-12 | 1993-12-21 | Tadahiro Ohmi | Device for plasma process |
| JPH06196421A (en) * | 1992-12-23 | 1994-07-15 | Sumitomo Metal Ind Ltd | Plasma device |
| JPH10163180A (en) * | 1996-10-02 | 1998-06-19 | Matsushita Electron Corp | Equipment for manufacturing electronic device and manufacture of electronic device |
| JP2000164565A (en) * | 1998-11-26 | 2000-06-16 | Sony Corp | Semiconductor manufacturing apparatus |
| JP2001250814A (en) * | 2000-03-06 | 2001-09-14 | Hitachi Ltd | Plasma treatment device |
| JP2004193564A (en) * | 2002-11-29 | 2004-07-08 | Hitachi High-Technologies Corp | Plasma treatment apparatus having high-frequency power supply with function of compensating sag and plasma treatment method |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1203089B (en) * | 1976-03-03 | 1989-02-15 | Int Plasma Corp | PROCEDURE AND EQUIPMENT TO PERFORM CHEMICAL REACTIONS IN THE REGION OF THE LUMINESCENT DISCHARGE OF A PLASMA |
| US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
| JPH08250488A (en) * | 1995-01-13 | 1996-09-27 | Seiko Epson Corp | Device and method for plasma treatment |
| JP3535276B2 (en) * | 1995-07-28 | 2004-06-07 | 株式会社半導体エネルギー研究所 | Etching method |
| US6007673A (en) * | 1996-10-02 | 1999-12-28 | Matsushita Electronics Corporation | Apparatus and method of producing an electronic device |
| US6155200A (en) * | 1997-07-08 | 2000-12-05 | Tokyo Electron Limited | ECR plasma generator and an ECR system using the generator |
| KR100305527B1 (en) * | 1998-07-09 | 2001-11-01 | 니시무로 타이죠 | Method and apparatus for manufactu ring semiconductor device |
| JP2001185542A (en) * | 1999-12-27 | 2001-07-06 | Hitachi Ltd | Plasma processor and plasma processing method using the same |
| US6677549B2 (en) * | 2000-07-24 | 2004-01-13 | Canon Kabushiki Kaisha | Plasma processing apparatus having permeable window covered with light shielding film |
| JP3854909B2 (en) * | 2002-08-06 | 2006-12-06 | 株式会社日立製作所 | Plasma processing equipment |
| JP2004200307A (en) * | 2002-12-17 | 2004-07-15 | Tokyo Electron Ltd | Plasma treatment device |
-
2005
- 2005-06-10 WO PCT/JP2005/010674 patent/WO2006008889A1/en active Application Filing
- 2005-06-10 KR KR1020067026219A patent/KR100845219B1/en not_active IP Right Cessation
- 2005-06-10 US US11/629,510 patent/US20070181256A1/en not_active Abandoned
- 2005-06-10 JP JP2006528459A patent/JPWO2006008889A1/en active Pending
- 2005-06-10 CN CNB2005800191722A patent/CN100440452C/en not_active Expired - Fee Related
- 2005-06-21 TW TW094120526A patent/TWI291727B/en not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5272417A (en) * | 1989-05-12 | 1993-12-21 | Tadahiro Ohmi | Device for plasma process |
| JPH06196421A (en) * | 1992-12-23 | 1994-07-15 | Sumitomo Metal Ind Ltd | Plasma device |
| JPH10163180A (en) * | 1996-10-02 | 1998-06-19 | Matsushita Electron Corp | Equipment for manufacturing electronic device and manufacture of electronic device |
| JP2000164565A (en) * | 1998-11-26 | 2000-06-16 | Sony Corp | Semiconductor manufacturing apparatus |
| JP2001250814A (en) * | 2000-03-06 | 2001-09-14 | Hitachi Ltd | Plasma treatment device |
| JP2004193564A (en) * | 2002-11-29 | 2004-07-08 | Hitachi High-Technologies Corp | Plasma treatment apparatus having high-frequency power supply with function of compensating sag and plasma treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| US20070181256A1 (en) | 2007-08-09 |
| KR20070032687A (en) | 2007-03-22 |
| JPWO2006008889A1 (en) | 2008-05-01 |
| KR100845219B1 (en) | 2008-07-10 |
| TWI291727B (en) | 2007-12-21 |
| TW200614366A (en) | 2006-05-01 |
| CN1969378A (en) | 2007-05-23 |
| WO2006008889A1 (en) | 2006-01-26 |
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