TW200612558A - Thin layer chemical transistor and its production method - Google Patents
Thin layer chemical transistor and its production methodInfo
- Publication number
- TW200612558A TW200612558A TW094129528A TW94129528A TW200612558A TW 200612558 A TW200612558 A TW 200612558A TW 094129528 A TW094129528 A TW 094129528A TW 94129528 A TW94129528 A TW 94129528A TW 200612558 A TW200612558 A TW 200612558A
- Authority
- TW
- Taiwan
- Prior art keywords
- thin layer
- present
- production method
- layer chemical
- chemical transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004251779 | 2004-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200612558A true TW200612558A (en) | 2006-04-16 |
TWI371857B TWI371857B (zh) | 2012-09-01 |
Family
ID=34941854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094129528A TW200612558A (en) | 2004-08-31 | 2005-08-29 | Thin layer chemical transistor and its production method |
Country Status (5)
Country | Link |
---|---|
US (1) | US7557392B2 (zh) |
EP (1) | EP1648040B1 (zh) |
KR (2) | KR20060050791A (zh) |
CN (1) | CN100490173C (zh) |
TW (1) | TW200612558A (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
FI20070063A0 (fi) * | 2007-01-24 | 2007-01-24 | Ronald Oesterbacka | Orgaaninen kenttävaikutustransistori |
GB2449926A (en) * | 2007-06-08 | 2008-12-10 | Seiko Epson Corp | Method for manufacturing an electrolyte pattern |
FI20085737L (fi) * | 2008-07-21 | 2010-01-22 | Ronald Oesterbacka | Komponentteja ja piirijärjestelyjä, joissa on ainakin yksi orgaaninen kenttävaikutustransistori |
KR102069249B1 (ko) * | 2018-06-08 | 2020-01-22 | 성균관대학교산학협력단 | 전기화학 트랜지스터 및 이의 응용 |
CN109950321B (zh) * | 2019-03-25 | 2022-02-11 | 暨南大学 | 一种基于氧化钨的p型场效应晶体管及其制备方法 |
US11257962B2 (en) * | 2019-05-02 | 2022-02-22 | Micron Technology, Inc. | Transistors comprising an electrolyte, semiconductor devices, electronic systems, and related methods |
CN113410383B (zh) * | 2021-06-19 | 2022-09-16 | 西北工业大学 | 一种基于聚噻吩的电池型电化学突触晶体管及其制备方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5931521B2 (ja) * | 1979-07-23 | 1984-08-02 | 信越化学工業株式会社 | シアノエチルプルランおよびその製造方法 |
US5892244A (en) * | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
US6174623B1 (en) * | 1994-03-08 | 2001-01-16 | Valence Technology, Inc. | Conductive-polymer-coated electrode particles |
JP3246189B2 (ja) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
SE520339C2 (sv) * | 2001-03-07 | 2003-06-24 | Acreo Ab | Elektrokemisk transistoranordning och dess tillverkningsförfarande |
CN1157807C (zh) * | 2001-11-09 | 2004-07-14 | 清华大学 | 一种有机薄膜场效应晶体管及其制备方法 |
US6674121B2 (en) * | 2001-12-14 | 2004-01-06 | The Regents Of The University Of California | Method and system for molecular charge storage field effect transistor |
JP2005513788A (ja) * | 2001-12-19 | 2005-05-12 | アベシア・リミテッド | 有機誘電体を有する有機電界効果トランジスタ |
JP4247377B2 (ja) * | 2001-12-28 | 2009-04-02 | 独立行政法人産業技術総合研究所 | 薄膜トランジスタ及びその製造方法 |
EP1361619A3 (en) * | 2002-05-09 | 2007-08-15 | Konica Corporation | Organic thin-film transistor, organic thin-film transistor sheet and manufacturing method thereof |
JP4892973B2 (ja) * | 2003-02-18 | 2012-03-07 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタ素子の製造方法 |
US7098525B2 (en) * | 2003-05-08 | 2006-08-29 | 3M Innovative Properties Company | Organic polymers, electronic devices, and methods |
JP2005072528A (ja) * | 2003-08-28 | 2005-03-17 | Shin Etsu Chem Co Ltd | 薄層電界効果トランジスター及びその製造方法 |
US7256436B2 (en) * | 2004-03-30 | 2007-08-14 | Shin-Etsu Chemical Co., Ltd. | Thin-film field-effect transistors and making method |
US20050279995A1 (en) * | 2004-06-21 | 2005-12-22 | Samsung Electronics Co., Ltd. | Composition for preparing organic insulating film and organic insulating film prepared from the same |
US7315042B2 (en) * | 2004-11-18 | 2008-01-01 | 3M Innovative Properties Company | Semiconductors containing trans-1,2-bis(acenyl)ethylene compounds |
-
2005
- 2005-08-03 EP EP05254857.5A patent/EP1648040B1/en not_active Expired - Fee Related
- 2005-08-09 US US11/199,152 patent/US7557392B2/en active Active
- 2005-08-17 CN CNB2005100917632A patent/CN100490173C/zh not_active Expired - Fee Related
- 2005-08-29 TW TW094129528A patent/TW200612558A/zh not_active IP Right Cessation
- 2005-08-30 KR KR1020050079813A patent/KR20060050791A/ko not_active Application Discontinuation
-
2009
- 2009-07-22 KR KR1020090066630A patent/KR100975729B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN1744327A (zh) | 2006-03-08 |
CN100490173C (zh) | 2009-05-20 |
KR100975729B1 (ko) | 2010-08-12 |
EP1648040B1 (en) | 2016-06-01 |
KR20060050791A (ko) | 2006-05-19 |
US7557392B2 (en) | 2009-07-07 |
TWI371857B (zh) | 2012-09-01 |
US20060043432A1 (en) | 2006-03-02 |
EP1648040A2 (en) | 2006-04-19 |
KR20090089275A (ko) | 2009-08-21 |
EP1648040A3 (en) | 2008-05-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |