TW200612554A - Method and system for etching a gate stack - Google Patents
Method and system for etching a gate stackInfo
- Publication number
- TW200612554A TW200612554A TW094127126A TW94127126A TW200612554A TW 200612554 A TW200612554 A TW 200612554A TW 094127126 A TW094127126 A TW 094127126A TW 94127126 A TW94127126 A TW 94127126A TW 200612554 A TW200612554 A TW 200612554A
- Authority
- TW
- Taiwan
- Prior art keywords
- coating
- tera
- etching
- gate stack
- group
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000011248 coating agent Substances 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 4
- 239000006117 anti-reflective coating Substances 0.000 abstract 1
- 230000003667 anti-reflective effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/926,404 US20060049139A1 (en) | 2004-08-26 | 2004-08-26 | Method and system for etching a gate stack |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200612554A true TW200612554A (en) | 2006-04-16 |
TWI286840B TWI286840B (en) | 2007-09-11 |
Family
ID=35058277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094127126A TWI286840B (en) | 2004-08-26 | 2005-08-10 | Method and system for etching a gate stack |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060049139A1 (zh) |
JP (1) | JP2008511167A (zh) |
KR (1) | KR20070051846A (zh) |
TW (1) | TWI286840B (zh) |
WO (1) | WO2006025944A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8092695B2 (en) * | 2006-10-30 | 2012-01-10 | Applied Materials, Inc. | Endpoint detection for photomask etching |
US8741394B2 (en) | 2010-03-25 | 2014-06-03 | Novellus Systems, Inc. | In-situ deposition of film stacks |
US9028924B2 (en) * | 2010-03-25 | 2015-05-12 | Novellus Systems, Inc. | In-situ deposition of film stacks |
US9165788B2 (en) | 2012-04-06 | 2015-10-20 | Novellus Systems, Inc. | Post-deposition soft annealing |
US9117668B2 (en) | 2012-05-23 | 2015-08-25 | Novellus Systems, Inc. | PECVD deposition of smooth silicon films |
US9388491B2 (en) | 2012-07-23 | 2016-07-12 | Novellus Systems, Inc. | Method for deposition of conformal films with catalysis assisted low temperature CVD |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3729728A (en) * | 1971-05-10 | 1973-04-24 | Spearhead Inc | Capacitive switching device |
US3986372A (en) * | 1976-01-16 | 1976-10-19 | Whirlpool Corporation | Appliance programmer including a safety circuit |
US4748296A (en) * | 1986-12-03 | 1988-05-31 | General Electric Company | Push-to-start control switch |
US5161393A (en) * | 1991-06-28 | 1992-11-10 | General Electric Company | Electronic washer control including automatic load size determination, fabric blend determination and adjustable washer means |
IT226476Z2 (it) * | 1992-04-14 | 1997-06-24 | Whirlpool Italia | Dispositivo atto a controllare e comandare il funzionamento di una lavabiancheria o similare o altro elettrodomestico quale piano di cottura forno o similare con manopola servoassistita |
US5301523A (en) * | 1992-08-27 | 1994-04-12 | General Electric Company | Electronic washer control including automatic balance, spin and brake operations |
US5464955A (en) * | 1993-04-15 | 1995-11-07 | Emerson Electric Co. | Backlit appliance control console |
JP3193265B2 (ja) * | 1995-05-20 | 2001-07-30 | 東京エレクトロン株式会社 | プラズマエッチング装置 |
US5668359A (en) * | 1996-03-01 | 1997-09-16 | Eaton Corporation | Multiple switch assembly including spring biased rotary cam with concentric cam tracks for selectively operating switches |
US6316167B1 (en) * | 2000-01-10 | 2001-11-13 | International Business Machines Corporation | Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof |
DE19928229A1 (de) * | 1999-06-19 | 2000-12-21 | Mannesmann Vdo Ag | Versenkbarer Drehknopf |
JP3968020B2 (ja) * | 2001-02-24 | 2007-08-29 | マルクアルト ゲーエムベーハー | 回転角調整装置 |
US7196604B2 (en) * | 2001-05-30 | 2007-03-27 | Tt Electronics Technology Limited | Sensing apparatus and method |
US6727443B2 (en) * | 2001-08-06 | 2004-04-27 | Emerson Electric Co. | Appliance control system with knob control assembly |
US6813524B2 (en) * | 2001-08-06 | 2004-11-02 | Emerson Electric Co. | Appliance control system with auxiliary inputs |
US6862482B2 (en) * | 2001-08-06 | 2005-03-01 | Emerson Electric Co. | Appliance control system with LED operation indicators |
JP2003124189A (ja) * | 2001-10-10 | 2003-04-25 | Fujitsu Ltd | 半導体装置の製造方法 |
DE10203509B4 (de) * | 2002-01-30 | 2005-01-13 | Whirlpool Corp., Benton Harbor | Rastvorrichtung für einen mehrstufigen Drehschalter |
US6933568B2 (en) * | 2002-05-17 | 2005-08-23 | Samsung Electronics Co., Ltd. | Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same |
US6630395B1 (en) * | 2002-10-24 | 2003-10-07 | International Business Machines Corporation | Methods for fabricating electrical connections to semiconductor structures incorporating low-k dielectric materials |
US6869542B2 (en) * | 2003-03-12 | 2005-03-22 | International Business Machines Corporation | Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials |
US7199046B2 (en) * | 2003-11-14 | 2007-04-03 | Tokyo Electron Ltd. | Structure comprising tunable anti-reflective coating and method of forming thereof |
-
2004
- 2004-08-26 US US10/926,404 patent/US20060049139A1/en not_active Abandoned
-
2005
- 2005-06-30 KR KR1020077002485A patent/KR20070051846A/ko not_active Application Discontinuation
- 2005-06-30 JP JP2007529849A patent/JP2008511167A/ja not_active Withdrawn
- 2005-06-30 WO PCT/US2005/023943 patent/WO2006025944A1/en active Application Filing
- 2005-08-10 TW TW094127126A patent/TWI286840B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20070051846A (ko) | 2007-05-18 |
JP2008511167A (ja) | 2008-04-10 |
US20060049139A1 (en) | 2006-03-09 |
TWI286840B (en) | 2007-09-11 |
WO2006025944A1 (en) | 2006-03-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |