TW200609375A - Plasma cvd device - Google Patents

Abstract

To provide a plasma CVD (chemical vapor deposition) device where the improvement of the precision in alignment is made possible, film deposition at high precision can be performed, and simplification and compacting are attained. Regarding the plasma CVD system where, in a pair of parallel plate electrodes 2 and 3 provided at a vacuum tank 1, the side of one electrode 2 is provided with a substrate 5 to be superimposed with a mask 4, and voltage is applied to the parallel plate electrodes 2 and 3, and a film deposition material gas introduced into a space part 6 between the parallel plate electrodes 2 and 3 is converted into plasma, thus a thin film is deposited on the substrate 5, the vacuum tank 1 is provided with an alignment mechanism 7 where the alignment between the mask 4 and the substrate 5 is performed, and a plasma leakage check mechanism 8 where the leakage of the film deposition material gas made into the plasma in the space part 6 from the space part 6 is checked. The check mechanism 8 is composed in such a manner that the space part 6 is surrounded by an insulating region where the film deposition material gas is not converted into plasma, and the film deposition material gas which is not plasma is exhausted from the space part 6 via a counter space 10 of insulating region forming bodies 9 communicating with the space part 6.