TW200607066A - Composite barrier layer - Google Patents
Composite barrier layerInfo
- Publication number
- TW200607066A TW200607066A TW094126257A TW94126257A TW200607066A TW 200607066 A TW200607066 A TW 200607066A TW 094126257 A TW094126257 A TW 094126257A TW 94126257 A TW94126257 A TW 94126257A TW 200607066 A TW200607066 A TW 200607066A
- Authority
- TW
- Taiwan
- Prior art keywords
- barrier layer
- composite barrier
- layers
- materials
- conductive
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title abstract 9
- 239000002131 composite material Substances 0.000 title abstract 7
- 239000003989 dielectric material Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76844—Bottomless liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/927—Electromigration resistant metallization
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59867004P | 2004-08-04 | 2004-08-04 | |
US11/024,916 US7453149B2 (en) | 2004-08-04 | 2004-12-28 | Composite barrier layer |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200607066A true TW200607066A (en) | 2006-02-16 |
TWI314776B TWI314776B (en) | 2009-09-11 |
Family
ID=35756621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094126257A TWI314776B (en) | 2004-08-04 | 2005-08-02 | Composite barrier layer |
Country Status (2)
Country | Link |
---|---|
US (2) | US7453149B2 (zh) |
TW (1) | TWI314776B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005023122A1 (de) * | 2005-05-19 | 2006-11-23 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Schichtstapel und Verfahren |
TWI267946B (en) * | 2005-08-22 | 2006-12-01 | Univ Nat Chiao Tung | Interconnection of group III-V semiconductor device and fabrication method for making the same |
JP4703349B2 (ja) * | 2005-10-11 | 2011-06-15 | Okiセミコンダクタ株式会社 | アモルファス膜の成膜方法 |
DE102006056626A1 (de) * | 2006-11-30 | 2008-06-05 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum selektiven Herstellen einer leitenden Barrierenschicht durch ALD |
JP2010536159A (ja) * | 2007-08-03 | 2010-11-25 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US8026168B2 (en) * | 2007-08-15 | 2011-09-27 | Tokyo Electron Limited | Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming |
JP2009231497A (ja) * | 2008-03-21 | 2009-10-08 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
US20090246952A1 (en) * | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Method of forming a cobalt metal nitride barrier film |
US7985680B2 (en) * | 2008-08-25 | 2011-07-26 | Tokyo Electron Limited | Method of forming aluminum-doped metal carbonitride gate electrodes |
US10367089B2 (en) | 2011-03-28 | 2019-07-30 | General Electric Company | Semiconductor device and method for reduced bias threshold instability |
US8474534B1 (en) * | 2011-12-21 | 2013-07-02 | Halliburton Energy Services, Inc. | Functionalized surface for flow control device |
KR102182319B1 (ko) * | 2013-06-05 | 2020-11-25 | 삼성전자주식회사 | 전자 기기 및 전자 기기에서 배터리 정보 제공 방법 |
US10796996B2 (en) | 2017-03-10 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of forming the same |
US10658315B2 (en) * | 2018-03-27 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Redistribution layer metallic structure and method |
US11515256B2 (en) * | 2021-01-27 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and manufacturing method thereof |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6093615A (en) * | 1994-08-15 | 2000-07-25 | Micron Technology, Inc. | Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug |
US5714418A (en) * | 1995-11-08 | 1998-02-03 | Intel Corporation | Diffusion barrier for electrical interconnects in an integrated circuit |
US6054382A (en) * | 1996-03-28 | 2000-04-25 | Texas Instruments Incorporated | Method of improving texture of metal films in semiconductor integrated circuits |
WO1998007830A2 (en) * | 1996-08-22 | 1998-02-26 | The Institute For Genomic Research | COMPLETE GENOME SEQUENCE OF THE METHANOGENIC ARCHAEON, $i(METHANOCOCCUS JANNASCHII) |
US5858873A (en) * | 1997-03-12 | 1999-01-12 | Lucent Technologies Inc. | Integrated circuit having amorphous silicide layer in contacts and vias and method of manufacture thereof |
US5985762A (en) * | 1997-05-19 | 1999-11-16 | International Business Machines Corporation | Method of forming a self-aligned copper diffusion barrier in vias |
US6541371B1 (en) * | 1999-02-08 | 2003-04-01 | Novellus Systems, Inc. | Apparatus and method for depositing superior Ta(N)/copper thin films for barrier and seed applications in semiconductor processing |
DE10080457T1 (de) * | 1999-02-12 | 2001-04-26 | Gelest Inc | CVD-Abscheidung von Wolframnitrid |
US6147404A (en) * | 1999-05-24 | 2000-11-14 | Advanced Micro Devices, Inc. | Dual barrier and conductor deposition in a dual damascene process for semiconductors |
AU1208201A (en) * | 1999-10-15 | 2001-04-30 | Asm America, Inc. | Method for depositing nanolaminate thin films on sensitive surfaces |
US6319766B1 (en) * | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
US6797608B1 (en) * | 2000-06-05 | 2004-09-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming multilayer diffusion barrier for copper interconnections |
US6518609B1 (en) * | 2000-08-31 | 2003-02-11 | University Of Maryland | Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film |
US20020117700A1 (en) * | 2001-02-28 | 2002-08-29 | Glex Fox | Amorphous iridium oxide barrier layer and electrodes in ferroelectric capacitors |
US7057251B2 (en) * | 2001-07-20 | 2006-06-06 | Reflectivity, Inc | MEMS device made of transition metal-dielectric oxide materials |
WO2004014644A1 (ja) * | 2002-08-07 | 2004-02-19 | Kabushiki Kaisha Toyota Chuo Kenkyusho | 密着層を備える積層体及び保護膜を備える積層体 |
US6974768B1 (en) * | 2003-01-15 | 2005-12-13 | Novellus Systems, Inc. | Methods of providing an adhesion layer for adhesion of barrier and/or seed layers to dielectric films |
US7193323B2 (en) * | 2003-11-18 | 2007-03-20 | International Business Machines Corporation | Electroplated CoWP composite structures as copper barrier layers |
US7114418B1 (en) * | 2004-09-16 | 2006-10-03 | Allen William G | Faucet-seat tool |
-
2004
- 2004-12-28 US US11/024,916 patent/US7453149B2/en not_active Expired - Fee Related
-
2005
- 2005-08-02 TW TW094126257A patent/TWI314776B/zh not_active IP Right Cessation
-
2008
- 2008-10-10 US US12/287,516 patent/US8034709B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8034709B2 (en) | 2011-10-11 |
US7453149B2 (en) | 2008-11-18 |
US20060027925A1 (en) | 2006-02-09 |
TWI314776B (en) | 2009-09-11 |
US20090047780A1 (en) | 2009-02-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |