TW200606587A - Positive photoresist composition and resist pattern formation method - Google Patents

Positive photoresist composition and resist pattern formation method

Info

Publication number
TW200606587A
TW200606587A TW094121650A TW94121650A TW200606587A TW 200606587 A TW200606587 A TW 200606587A TW 094121650 A TW094121650 A TW 094121650A TW 94121650 A TW94121650 A TW 94121650A TW 200606587 A TW200606587 A TW 200606587A
Authority
TW
Taiwan
Prior art keywords
photoresist composition
resist pattern
positive photoresist
formation method
acid
Prior art date
Application number
TW094121650A
Other languages
Chinese (zh)
Other versions
TWI299435B (en
Inventor
Kazufumi Sato
Sachiko Yoshizawa
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200606587A publication Critical patent/TW200606587A/en
Application granted granted Critical
Publication of TWI299435B publication Critical patent/TWI299435B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

A positive photoresist composition which has a high resolution, and also is improved in at least one of rectangularity of resist pattern shape, LER, DOF, and EL margin. The photoresist composition comprises (A) a resin component which increases its alkali solubility by an acid, and (B) a compound which releases an acid by a radiation exposure thereon, wherein the resin component (A) contains a copolymer (A1) having a constitutional unit (a1) with a phenolic hydroxyl group, a constitutional unit (a2) with a lactone-containing monocyclic or polycyclic group, and a constituent unit (a3) with an acid dissociable dissolution inhibiting group.
TW94121650A 2004-07-01 2005-06-28 Positive photoresist composition and resist pattern formation method TWI299435B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004195672A JP2006018016A (en) 2004-07-01 2004-07-01 Positive resist composition and resist pattern forming method

Publications (2)

Publication Number Publication Date
TW200606587A true TW200606587A (en) 2006-02-16
TWI299435B TWI299435B (en) 2008-08-01

Family

ID=35782621

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94121650A TWI299435B (en) 2004-07-01 2005-06-28 Positive photoresist composition and resist pattern formation method

Country Status (3)

Country Link
JP (1) JP2006018016A (en)
TW (1) TWI299435B (en)
WO (1) WO2006003810A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI833051B (en) * 2019-12-31 2024-02-21 美商羅門哈斯電子材料有限公司 Polymers, photoresist compositions and methods of forming patterns

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4945160B2 (en) * 2006-03-30 2012-06-06 三菱レイヨン株式会社 Method for producing polymer, resist composition, and method for producing substrate on which pattern is formed
JP5124535B2 (en) * 2009-07-03 2013-01-23 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
CN108026011A (en) * 2015-09-04 2018-05-11 三菱瓦斯化学株式会社 The purification process of compound
CN114083916B (en) * 2021-11-12 2023-12-15 厦门通益包装科技有限公司 Green printing process for packaging box

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3030672B2 (en) * 1991-06-18 2000-04-10 和光純薬工業株式会社 New resist material and pattern forming method
JP4186497B2 (en) * 2001-04-12 2008-11-26 東レ株式会社 Positive radiation-sensitive composition and method for producing resist pattern using the same
JP4036320B2 (en) * 2002-03-01 2008-01-23 Ｊｓｒ株式会社 Radiation sensitive resin composition
JP2004029437A (en) * 2002-06-26 2004-01-29 Toray Ind Inc Positive radiation-sensitive composition
JP2004286968A (en) * 2003-03-20 2004-10-14 Toray Ind Inc Positive radiation-sensitive composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI833051B (en) * 2019-12-31 2024-02-21 美商羅門哈斯電子材料有限公司 Polymers, photoresist compositions and methods of forming patterns

Also Published As

Publication number Publication date
JP2006018016A (en) 2006-01-19
TWI299435B (en) 2008-08-01
WO2006003810A1 (en) 2006-01-12

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