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Application filed by Led Expert CorpfiledCriticalLed Expert Corp
Priority to TW093117331ApriorityCriticalpatent/TW200601579A/en
Publication of TW200601579ApublicationCriticalpatent/TW200601579A/en
The present invention relates to a nitride semiconductor solar cell, which includes a substrate, an n-side electrode formed on the substrate, an n-type semiconductor layer formed on the n-side electrode and composed of an n-type InGaN material, a p-type semiconductor layer formed on the n-type semiconductor layer and composed of a p-type InGaN material, and a p-side electrode formed on the p-type semiconductor layer. The solar cell has high-absorption efficiency of UV-blue light.
TW093117331A2004-06-162004-06-16Nitride semiconductor solar cell
TW200601579A
(en)