TW200538566A - Cyclic pulsed plasma atomic layer deposition method - Google Patents

Abstract

Provided is a method of depositing a cyclic pulsed plasma atomic layer to deposit a thin film on a surface of a substrate in a reaction chamber. The method is achieved by supplying source gas to the reaction chamber to be absorbed on the surface of the substrate loaded in the reaction chamber, stopping the supply of the source gas, purging the source gas remaining in the reaction chamber without being absorbed by supplying purge gas, and continuously supplying the purge gas, passing reaction gas through a reaction gas activation unit and supplying the reaction gas to the reaction chamber, applying RF power to the reaction chamber in a state in which pressure in the reaction chamber is stable as the activated reaction gas is supplied to the reaction chamber, stopping the application of the RF power and the supply of the reaction gas, purging the reaction gas remaining in the reaction chamber with the continuously supplied purge gas, and stopping the supply of the purge gas, and sequentially repeating the above operations until a thin film having a desired thickness is formed.

Description

200538566 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a cyclic pulse plasma atomic layer deposition method, and more particularly, to-, an apparatus and method, which are used for low-frequency (RF) work. l High-quality product f film, by making the reaction gas activation step and the step of cyclically applying RF power overlap or not overlap, without causing damage to the silicon substrate. And [Previous Technology] As the width of circuit lines in semiconductors becomes super narrow, there is a very thin film that needs to be formed at low temperatures and exhibits excellent characteristics, and is applied to electrode films of DRAM storage capacitors, Gate insulation film, or formed as an electrode film-part of the copper diffusion prevention film. In a thin film formation method using a chemical reaction of a gaseous material, this atomic layer deposition method, in which a reaction gas is sequentially supplied and the cycle is repeated, is very useful for forming a very thin film. / — When a plasma is generated in a reaction chamber loaded with a silicon substrate to deposit a thin film on the substrate surface, the semiconductor device or substrate formed or being formed on the substrate may be damaged. Therefore, even if the pulsed plasma atomic layer deposition method is implemented at the same substrate temperature and the same plasma energy, when the design standard of the semiconductor circuit is tightened, the size of the semiconductor device is further reduced, so it is easy to cause damage. As a result, the characteristics of the semiconductor device are deteriorated, or the yield rate directly related to the semiconductor manufacturing cost is reduced. Proposed by Arther Sherman with the title "Se (luential Chemical Vap〇r

Deposition "US Patent No. USP 5,916,365 discloses a pulsed plasma atomic layer deposition method, in which the plasma is provided in the reaction gas supply cycle of the atomic layer deposition method, and a high-quality film is formed at a low temperature. However, this patent does not No method is proposed to solve the problem of damage caused by the plasma in the semiconductor substrate, as well as the reliability of the plasma ignition and the ability of the plasma to repeat. Korean patent case filed by Chun-Soo Lee et al. No. 0—〇273473 and US Patent No. 6,645,574 B1, whose titles are “Thin Film Forming Method” and “Method of Forming a Thin Film”, respectively, which reveal a chemical vapor phase 200538566 or pulsed wire environment Materials are provided below. In the pulsed electro-water atomic layer deposition method according to these patents, once the anti-money body is supplied to the reaction, it is supplied with RF God, and the silk surface gas is cleaned. In this process, the supply of the source gas and the purge gas is stopped, and the supply of the reaction gas is started, and the cap force and temperature of the reaction chamber are in a state of instability. When the RF God is provided to generate, the pressure and temperature in the reaction chamber become unstable, and this = the reliability and the plasma repetition ability are deteriorated. "Electric water". Zhan Ren The US patent case filed by OferSneh still prints "⑽", its poles are entitled "Radical-assisted Sequential CVD," and it discloses a method by

A thin film is formed by alternately applying molecules in the form of mdi-activated molecules before f (precurs0 ^). However, this patent does not suggest methods to solve practical problems, such as the reliability of pro-ignition before the production of semiconductor substrate towels, And reliance on the ability to generate repeatedly, these problems occur when using activation methods such as plasma. [Summary] To solve the above and / or other problems, the present invention provides a cyclic pulse type plasma atomic layer deposition device and method With this method and device, a high-quality film can be formed at a low process temperature, and the damage to the semiconductor device or the circuit on the substrate can be reduced in the following ways, that is, the alternate or mixed implementation of the reaction gas supply cycle that generates the plasma And a reactive gas supply cycle that does not generate plasma. Also, the present invention provides a cyclic pulse type plasma atomic layer deposition device and method. When a plasma is used in this cyclic pulse type plasma atomic layer deposition method, , Can = improve the reliability of plasma ignition, and the ability of plasma to generate repeatedly. According to one aspect of the present invention, you can borrow High-quality films are deposited by only providing low-energy plasma, which does not damage the silicon substrate by only overlapping the reaction gas supply cycle with the plasma application cycle part of the cycle. According to another aspect of the invention, this reaction The gas is activated by a reactive gas activation unit in the semiconductor processing step. This radical that shows a large chemical activity is generated by supplying a plasma to the activation unit. This reactive gas is at least thermally activated, or two Then, a plasma is generated in the reaction chamber, and the source gas is adsorbed on the substrate which is anti-200538566, and the reaction gases react with each other. A thin film of a desired thickness can be formed on the substrate by the following method 'That is, alternately or mixedly implement the reaction gas supply cycle that generates electricity and the reaction gas supply cycle that does not generate plasma. This method can prevent the characteristics of semiconductor devices with ultra-narrow line widths from deteriorating, and very effectively improve the yield. In addition, it can greatly reduce the damage caused to the semiconductor device or the substrate by the plasma. In another aspect, this source gas is supplied to the reaction chamber and adsorbed on the substrate loaded in the reaction chamber. Then the supply of this source gas is stopped, and in a subsequent step, the source gas remaining in the reaction chamber is purged with a purge gas, And the activated reaction gas is supplied to this reaction chamber. Otherwise, the source gas remaining in the reaction chamber is not purged with the purge gas, but the activated reaction gas is directly supplied to the reaction chamber to purify the source gas. However, when the reaction chamber is cleared, a pressure unstable state is generated in the reaction chamber. To avoid this pressure unstable state, the plasma is provided to the reaction chamber after a preset time has elapsed to stabilize the unstable state. As a result, the application situation of the electric mass in the reaction chamber becomes stable, so that the reliability of the plasma ignition and the ability of the plasma to repeatedly generate are greatly improved. [Embodiment] Refer to the first, second, 3A, 3B, And FIG. 3C. In the cyclic pulsed plasma atomic layer deposition method according to the first embodiment of the present invention, the silicon substrate 218 is loaded on a substrate support in a reaction chamber 200. Holding platform 212. In step 1 (101 and 301A), the source gas including the element "a" is supplied to the reaction chamber 200 via the source gas supply pipe 220 so that the source gas is adsorbed on the silicon substrate 218. In step 2 (102 and 302A), the source gas remaining in the reaction chamber 200 without being adsorbed on the silicon substrate 218 is removed by the exhaust unit 208 using a purge gas. The source gas supply pipe 220, the reaction gas supply pipes 222A and 222B, or separate supply pipes are used to supply the purge gas. In step 3 (103, 303A, and 313B), the reaction gas including the element "b" passes through the reaction gas activation unit 206, and is then supplied to the reaction chamber through the reaction gas supply pipes 222A and 222B. Since the reaction gas has been supplied by The reactive gas activation unit 206 is activated, 200538566. Therefore, the first part of the deposition process is performed, in which the reactive gas reacts with the source gas adsorbed on the silicon substrate 218, so that an "a" or "ab" film is deposited. This may be formed "A," in the case of a film rather than an "ab" film. For example, when the element "a" is titanium (Ti), the source gas is titanium gas (TiCl ·), the element "b" is hydrogen (H), and the reaction gas is hydrogen (H2), then this The formed thin film is a titanium thin film containing a titanium element. In step 4 (104 and 304A), the reaction gas including the element "b" passes through the reaction gas activation unit 206, and is then continuously supplied to the reaction chamber 200 through the reaction gas supply pipes 222A and 222B. In this way, the plasma is supplied into the reaction chamber 200 so that radicals and ions are generated in the reaction chamber 200. Therefore, the second part of the deposition process is thus performed, in which an "a" or "ab" film is deposited on a silicon substrate 218. However, when this source gas is in the reaction chamber without the assistance of a plasma, it does not react or hardly reacts with this activated reaction gas. In this case, step 2 (102 and 302A) is skipped, so that the source gas remaining in the reaction chamber 200 is removed as a reaction gas instead of this.

The remaining source gas in the reaction chamber 200 is purged with purge gas. Finally, in step 5 (105 and 305A), the supply of electricity and the supply of reaction gas are stopped, and the remaining reaction gas in the reaction chamber 200 is removed by the purge gas. In Ben Maoming, the remaining source gas in the reaction chamber 200 is cleaned in step 2 (102 and 3G2A), and the gas can be removed. In this case, when in step 5 (105 and 305A), stop the reaction gas remaining in the reaction chamber touch by continuously supplying two degassing; Divide. Referring to Figures 3A, 3B, and 3C, this tlit6 represents the beginning and end of the step process. In order to deposit through these five steps to form the second product: Steps 1 to 5 described above are repeated N times as desired. In the above process: the source is in the future, the reaction is read, and the gas is removed. ′ A, the process gas in the reaction chamber 20G is cleaned with the purge gas in the above process. 可 ,,,, ^ This purge ^ When the purge is completed, the side pavilion stops feeding and degassing. Figure 2 shows the structure of a thin-film deposition device, and the cyclic pulse type electrode layer deposition method. With reference to the second substrate according to the present invention, the substrate or wafer 218 supports Hei 212θ < ¥ π. Here, a silicon pole fork Xuan 212 疋 is placed on the reaction chamber. The RF matching unit 202 for supplying RF power to generate plasma is connected to the reaction chamber 200 together with the RF power generating unit 204. The RF matcher 202 and the RF power generation unit 204 are collectively called an RF power supply unit. This ground 214 is one of the electrodes and can be connected to a substrate support platform 212 installed in the reaction chamber 200 or separately installed in the reaction chamber 200. The process gas supply and control unit 210 is used to control the supply of the source gas and the reaction gas via the source gas supply pipe 220 and the reaction gas supply pipes 222A and 222B, and connect the source gas and the reaction gas to the reaction chamber 2 through these pipes 〇〇. The process gas supply and control unit 210 can be designed to supply and control the purge gas. The purge gas is typically supplied to the reaction chamber 200 using an additional supply pipe (not shown). The reaction gas activation unit 206 for activating the reaction gas is connected between the reaction gas supply pipes 222A and 222B. This reactive gas activation unit 206 may have: a reactive gas activation function by only heat treatment, or a reactive gas activation function by plasma generation, or both. This heat treatment or plasma generation function can control the intensity of plasma energy. This exhaust unit 208 for exhausting the process gas is connected to the reaction chamber 200 via an exhaust pipe 228. ~ This source gas typically includes metallic elements. For example, in order to form a nitride film, the reaction gas thus formed includes nitrogen. That is, when using the method of the present invention to form a source gas including one of titanium (Ti), group (Ta), or Yan (W) mixture, and the reaction gas formed is nitrogen (N2), ammonia ( When one of NH3) or hydrazine (N2H4) gas is used, nitride films such as titanium nitride (TiN), tantalum nitride (TaN), or tungsten nitride (WN) can be formed. This reaction gas may be formed from a gas mixture including the element "b" and hydrogen (¾) gas. For example, 'This reaction gas can be composed of: a mixture of nitrogen (NO gas and hydrogen (¾) gas, a mixture of ammonia (service) and hydrogen (¾) gas, or a mixture of hydrazine (Nβ4) gas and hydrogen (¾) gas) Formed. In steps 3 and 4, NH, brain, or radical is supplied onto the silicon substrate 218 to form a metal nitride film. Also, when the reaction gas is a gas including oxygen (〇2) Or formed from a mixture including oxygen (02) gas and hydrogen (¾) gas, an oxide film is formed. When the reaction gas is formed to include hydrogen (HO gas, because the metal mixture of the source gas is in the step Deoxidation in 3 and 4 thus forms a metal thin film. According to the present invention, in order to deposit a thin film of a desired thickness, steps 1 through 3A, 3β, 200538566 = 3C constituting a basic process cycle are repeated to step 5 Repeat the number of times you want—according to this ㈣'lay and skip step 4 to shape and reduce the system edit ring, 2 face ring, two health building _, the county separated the three basic private ship secret electric water. The wrong reason ' The energy provided to the German board 218 can be reduced by Γ1 = to greatly reduce the damage caused by the plasma to the silicon substrate 218 Example = sequentially between all steps Shu to embodiment 5. In this step depends on the reduced system

Step% 4 skips the basic process cycle step 4. When this reduction process cycle is formed, it is only necessary to skip the application of step 4 and turn off the gas supply to the turtle (not shown in the figure). As a result, when the reaction gas is activated by the reaction unit 2⑽, the reaction is raped, and the source gas remaining on the miscellaneous plate 218 loaded in the reaction chamber 2G is continued to perform the thin film deposition reaction. The first part of the accumulation process Copies). Moreover, because the basic process cycle and the reduced process are mixed, this whole process can be implemented smoothly. Finally, in order to obtain a film with a desired thickness, the super cycle is repeated as many times as desired. In this cycle, the basic process cycle and the reduced process cycle are implemented. In addition, it is possible to design a super-super-cycle, which is repeated by combining the basic process cycle and the reduced process cycle in an actual situation as desired. The structure and operating principle of the present invention will be described in detail with reference to the drawings. "First embodiment" As shown in the flow chart in FIG. 1, in the cyclic pulse type electric atomic layer deposition method according to the present invention, the stones are loaded on the substrate support platform 212 installed in the reaction chamber 200. A thin film including the elements "a" and "b" is formed on the surface of the substrate 218. Referring to Figures 1, 2, 3A, 3B, and 3C, in step 1 (101 and 301A), the source gas including the element "a" is supplied to the reaction chamber 200 through the source gas supply pipe 220 so that this source The gas is adsorbed on the surface of the silicon substrate 218. In step 2 (102 and 302A), the supply of the source gas is stopped and the purge gas is supplied to the reaction chamber 200, so that the source gas remaining in the reaction chamber 200 without being adsorbed on the silicon substrate 218 11 200538566 is purged. Continue to supply purge gas while using this source gas supply. As the purge gas, argon (Ar), helium (He), nitrogen (N2), or hydrogen (¾) gas is used. In step 3 (103, 303A, and 313B), the reaction gas including the element "b" is supplied to the reaction chamber 200 through the reaction gas activation unit 206 and the reaction gas supply pipes 222A and 222B. The reaction gas supplied to the reaction chamber 200 passes through the reaction gas activation unit 206. Here, the radical is extracted via the plasma generated in the reactive gas activation unit 206. This reaction gas is thermally activated in the reaction gas activation unit 206 or by the above two functions. As described above, the reaction gas supplied in step 3 is activated when it passes through the reaction gas activation unit 206, and the reaction gas starts from the source gas adsorbed on the silicon-based plate 218 loaded in the reaction chamber 2000. The deposition reaction is such that a thin film is formed on the silicon substrate 218, and the pressure instability in the reaction chamber 2000 caused by the reaction gas supply and stop supply is stabilized. At this time, the purge gas is continuously supplied. In step 4 (104, 304A, 314B, and 324C), the reaction gas including the element "b" is continuously supplied to the reaction chamber 200 via the reaction gas activation unit 206 and the reaction gas supply pipes 222A and 222B. The supplied reaction gas is activated by the reaction gas activation unit 206, and further activated by a plasma supplied to the reaction chamber 2000. Therefore, this reactive gas reacts with the source gas adsorbed on the silicon substrate 218 to produce a more active deposition reaction 'so that an "a" or "ab" film is formed on the substrate 218. At this time, purge gas is continuously supplied. ® In step 5 (105 and 305A), stop supplying reaction gas to the reaction chamber 200 and stop supplying plasma energy to the reaction chamber 200. The remaining reaction gas in the reaction chamber 2000 was purged by a continuously supplied purge gas. Finally, by repeating steps 1 to 5 as many times as desired, a film having a desired thickness is formed. As explained above, in the structure of the present invention, the source gas remaining in the reaction chamber 200 can be supplied by not continuously supplying the purge gas from step 2 and supplying or not supplying purge gas only in steps 2 and 5 '. Remove with reactive gases. Moreover, as defined in the present invention, steps 1-5 to 5 are basic process cycles. ^ According to the present invention ', since the pressure of the reaction gas in the reaction chamber is unstable and stable in step 3, the reliability of this electric ignition and electric polymerization is greatly improved. 12 200538566 "Second embodiment" With reference to Figures 2, 3A, 3B, 3C, and 4, according to the second embodiment of the present invention, step II, step 3, and figure 3a, in each process gas, in each process gas Electric water in the supply cycle should reach 200 in the reaction chamber. In order to reduce the damage caused by the plasma to the silicon substrate 218, the basic process cycle formed from step 丨 to step 5 in Fig. 3A (not shown in Fig. 4) skips only step 4 ( 104, 304A), or skip the whole step 4 to form a reduction process cycle. Therefore, compared with the case where the basic process cycle of Figures 丨 and 3A is repeatedly implemented, the plasma energy during the entire deposition process is further reduced >. When the supplied plasma energy is minimized, the possibility of damage to the substrate by the plasma can be greatly reduced. Although the present invention has been particularly shown and described with reference to the preferred embodiments, those skilled in the art understand that various changes can be made in form and detail without departing from the spirit and scope of the present invention as defined by the appended claims. "Industrial application" As described above, in the cyclic pulsed plasma atomic layer deposition method according to the present invention, by performing a process of activating a reactive gas in advance, it is alternately provided with a plasma energy and a low-electricity concentration device. Process so that a thin film can be deposited without damaging the semiconductor substrate. Moreover, by providing the reaction gas to the substrate in the previous activation state, and delaying the generation of plasma generation in the reaction chamber after the reaction gas supply time, the reliability of plasma ignition and the ability to repeatedly generate plasma can be improved. . Therefore, it is possible to deposit a high-density atomic layer showing a relatively high purity at a lower temperature. This method is also very effective for preventing degradation of the characteristics of semiconductor devices with ultra-narrow line widths or improving their yield. [Brief description of the drawings] FIG. 1 is a flowchart illustrating a cyclic pulse type electro-polymeric atomic layer deposition method according to a first embodiment of the present invention; FIG. 2 is a schematic diagram illustrating a device for performing this according to the present invention Cycle Pulse 13 200538566 Plasma Atomic Layer Deposition Method; Figure 3A illustrates the process sequence of the reactive gas supply cycle to perform the cyclic pulsed plasma atomic layer deposition method according to the present invention; Figure 3B shows the process in Figure 3A An example of pressure instability in a medium gas reaction chamber; FIG. 3C shows an example of RF power intensity applied to the reaction chamber over time during the process of FIG. 3A; and FIG. 4 shows this cycle according to a second embodiment of the present invention An example of a cycle of supplying reactive gas and supplying power in a pulsed plasma atomic layer deposition method.

[Symbol description of main components] 101 step 1 102 step 2 103 step 3 104 step 4 105 step 5 200 reaction chamber 202 radio frequency (RF) matcher 204 radio frequency (RF) power generation unit 206 reactive gas activation unit 208 exhaust unit 210 process Gas supply and control unit 212 Substrate support platform 214 Ground 218 Silicon substrate 220 Source gas supply pipe 222A Reaction gas supply pipe 222B Reaction gas supply pipe 228 Exhaust pipe 301A Step 1 302A Step 2 14 200538566

303A 304A 305A 313B 314B 324C Step 3 Step 4 Step 5 Step 3 Step 4 Step 4

Claims (1)

200538566 10. Scope of patent application: 1. A 2-product cycle pulsed plasma atomic layer method for depositing a thin film on the surface of a substrate in a reaction chamber. The method includes the following steps: supplying source gas to the reaction chamber, and It is adsorbed on the surface of the substrate loaded in the reaction chamber; the supply of the source gas is stopped, the source gas remaining in the reaction chamber without being adsorbed by the supplied purge gas is purged, and the purge gas is continuously supplied; the reaction gas is passed through The reaction gas activates the unit and supplies the reaction gas to the reaction chamber. The RF power is supplied to the reaction chamber in a state where when the activated reaction gas is supplied to the reaction chamber, the pressure in the reaction chamber is stable; the supply is stopped RF power, and stop supplying the reaction gas, so as to continuously supply the purge gas to purge the remaining reaction gas in the reaction chamber; and repeat the above operations in sequence until a film of a desired thickness is formed. 2. The method according to item 1 of the scope of patent application, wherein the supply of the purge gas is stopped after the source gas and the reaction gas remaining in the reaction chamber are purged by supplying the purge gas. 3. The method according to item 1 of the scope of patent application, wherein the source gas remaining in the reaction chamber is not purged with a purge gas, but the source gas remaining in the reaction chamber is purged by directly supplying the reaction gas in a subsequent step. At the same time, the reaction gas is supplied to the reaction chamber. 4. The method of claim 1 in which the purging gas is selected from the group consisting of argon (Ar), helium (He), nitrogen (N2), and hydrogen (¾). 5. The method according to item 1 of the patent application scope, wherein the reaction gas includes hydrogen (H). 16 200538566 6. A method of depositing a cyclic pulsed plasma atomic layer for depositing a thin film on the surface of a substrate in a reaction chamber, the method includes the following steps: a source gas is supplied to the reaction chamber, and it is adsorbed on a load On the surface of the substrate in the reaction chamber; stop the supply of the source gas, remove the source gas remaining in the reaction chamber without being adsorbed by the supplied purge gas, and continue to supply the purge gas; so that this includes nitrogen (N) The reaction gas is activated by the reaction gas activation unit and supplies the reaction gas to the reaction chamber; RF power is provided to the reaction chamber in a state where when the activated reaction gas is supplied to the reaction chamber, this is in the reaction chamber The pressure is stable; the supply of RF power is stopped, and the supply of reaction gas is stopped, so that the continuous supply of the purge gas removes the reaction gas remaining in the reaction chamber; and the above operations are repeated in sequence, until the desired thickness of nitrogen is formed Thin film. 7. The method according to item 6 of the patent application, wherein the supply of the purge gas is stopped after the source gas and the reaction gas remaining in the reaction chamber are purged by supplying the purge gas. 8. The method of claim 6 in the scope of patent application, wherein the source gas remaining in the reaction chamber is not removed with a purge gas, but the source gas remaining in the reaction chamber is directly supplied by the subsequent step X. Purge, and at the same time supply reaction gas to the reaction chamber. 9. The method according to item 6 of the patent application, wherein the gas is selected from the group consisting of argon, helium, nitrogen, and rat (¾). 10. The method according to item 6 of the scope of patent application, wherein the source gas is a transition metal such as: a mixture of titanium hafnium, thorium, or tungsten hafnium, 17 200538566, and the reaction gas includes one selected from the group consisting of: Nitrogen (N2), ammonia, or hydrazine gas, so that the deposited film includes a nitride of a transition metal. 11. The method according to item 6 of the patent application, wherein the reaction gas is composed of nitrogen Formed by a gas mixture of krypton and hydrogen krypton gas. 12. Kinds of pulsed plasma atomic layer method for depositing a thin film on the surface of a substrate in a reaction chamber. The method includes the following steps: It is supplied to the reaction chamber, and it is adsorbed on the surface of the substrate loaded in the reaction chamber. When the incoming work is stopped, the source gas remaining in the reaction chamber t without being adsorbed by the supplied purge gas is purged, and this is continuously supplied. Purge gas; make the reaction gas including oxygen element (0) activated by a reaction gas activation unit, and supply the reaction gas to the reaction chamber; supply RF power to the reaction chamber, and its state The state is that when this activated reaction gas is supplied to the reaction chamber, the pressure in the reaction chamber is stable; the supply of RF power is stopped, and the supply of the reaction gas is stopped, and the purge gas that is continuously supplied will remain in the reaction chamber. Removal of the reaction gas; and repeat the above operations in order until the oxide film of the desired thickness is formed. _13. The method of item 12 in the patent application, wherein the supply of the purge gas will be in the reaction chamber. After the residual source gas and reaction gas are removed, the supply of scavenging gas is stopped. 14. If the method in the scope of patent application No. 12 is used, the scavenging gas is not used to remove the remaining gas in the reaction chamber. The direct supply of the reaction gas in a subsequent step directly removes the source gas remaining in the reaction chamber. 15. The method according to item 12 of the patent application, wherein the reaction gas is formed by a gas mixture including oxygen (0) and hydrogen (¾) gas. 18 200538566 16. The method of claim 12 in which the purging gas is selected from the group consisting of chlorine (Ar), oxygen tritium, gas (N2), and hydrogen (¾). 17. · A method for depositing a cyclic pulsed plasma atomic layer, which is used to deposit a thin film on the substrate surface in a reaction chamber. The method includes the following steps: · A source gas is supplied to the reaction chamber, and it is adsorbed on a loading chamber. On the surface of the substrate in the reaction chamber; + Stop supplying the source gas, remove the source gas remaining in the reaction chamber towel without being adsorbed by the supplied purge gas, and continue to supply the purge gas; make this include hydrogen (H) The reaction gas is activated by the reaction gas activation unit and supplies the reaction gas to the reaction chamber; RF power is provided to the reaction chamber in a state where when the activated reaction gas is supplied to the reaction chamber, this is in the reaction chamber The pressure is stable; the supply of RF power is stopped, and the supply of reaction gas is stopped, so that the continuous supply of the purge gas removes the reaction gas remaining in the reaction chamber; and the above operations are repeated in order, until the desired thickness is formed Metal thin film. 18. The method according to item 17 of the scope of patent application, wherein the supply of the purge gas is stopped after the supply of the purge gas removes the source gas and the reaction gas remaining in the reaction chamber. 19. The method according to item 17 of the scope of patent application, wherein the source gas remaining in the reaction chamber is not purged with a purge gas, but is directly supplied in a subsequent step and the source gas remaining in the reaction chamber is directly Clear. 20. The method of claim 17 in the scope of patent application, wherein the purge gas is selected from the group consisting of argon (Ar), atmosphere (He), gas (n2), and hydrogen (¾). 19 200538566 21 · —A method for depositing a cyclic pulsed plasma atomic layer, which is used to deposit a thin film on the surface of a substrate in a reaction chamber. The basic process cycle includes: supplying a source gas to the reaction chamber while it is adsorbed On the surface of the substrate loaded in the reaction chamber; stop supplying the source gas, remove the source gas remaining in the reaction chamber without being adsorbed by the supplied purge gas, and continue to supply the purge gas; pass the reaction gas through the reaction gas The activation unit is activated and supplies a reaction gas to the reaction chamber; The RF power is provided to the reaction chamber in a state where when the activated reaction gas is supplied to the reaction chamber, the pressure in the reaction chamber is stable; the supply of RF power is stopped, and the supply of the reaction gas is stopped to continuously supply the The purge gas removes the remaining reaction gas in the reaction chamber; and the reduction process cycle includes: supplying a source gas to the reaction chamber, which is adsorbed on the surface of the substrate of the reaction chamber; by stopping the supply of the silk source gas The money supplies the shouting body and _ supplies the scavenging gas, and removes the source gas that has not been absorbed and remaining in the reaction chamber; the reaction gas is activated by the anti-listening activation unit, and the reaction gas is supplied to the reaction chamber; and ~ The activated reaction gas is sufficiently supplied to the reaction chamber to facilitate reaction with the source gas adsorbed on the substrate in the reaction chamber, and the reaction gas remaining in the reaction chamber is purged with a continuously supplied purge gas, and This is the super cycle formed by the basic process cycle and the reduction of the simple ring, the MSI, until the film of the desired thickness is formed Only. 22 · If the method of applying for the scope of the patent No. 21, in which the counter-age money is left to remove the reaction gas from the job display 20 200538566 23 · If the method of applying for the scope of the patent, No. 21, where this is based on a basic process (丨-丨), the super-ultra-cycle repeats n times (· η, two mu 2 reduction process cycle is stopped. ~ Until the formation of the desired thickness of the film is 24. If the scope of patent application is 21 In the method, the source gas is purged with the purge gas, but the source gas remaining in the reaction chamber is directly purged with the reaction gas supplied in the subsequent steps. Method, in which the purge gas is selected from the group consisting of argon (Ar), helium (He), nitrogen (N2), and hydrogen (h2). 26. The method according to the scope of application for patent, wherein The source gas is a metal mixture, and the reaction gas is formed of a gas including hydrogen (H). 21