WO2005112083A1

WO2005112083A1 - Cyclic pulsed plasma atomic layer deposition method

Info

Publication number: WO2005112083A1
Application number: PCT/KR2005/001385
Authority: WO
Inventors: Young-Hoon Park; Hong-Joo Lim; Sahng-Kyoo Lee; Tae-Wook Seo; Ho-Seung Chang
Original assignee: Ips Ltd.
Priority date: 2004-05-18
Filing date: 2005-05-12
Publication date: 2005-11-24
Also published as: TW200538566A; TWI293783B; KR100465118B1

Abstract

Provided is a method of depositing a cyclic pulsed plasma atomic layer to deposit a thin film on a surface of a substrate in a reaction chamber. The method is achieved by supplying source gas to the reaction chamber to be absorbed on the surface of the substrate loaded in the reaction chamber, stopping the supply of the source gas, purging the source gas remaining in the reaction chamber without being absorbed by supplying purge gas, and continuously supplying the purge gas, passing reaction gas through a reaction gas activation unit and supplying the reaction gas to the reaction chamber, applying RF power to the reaction chamber in a state in which pressure in the reaction chamber is stable as the activated reaction gas is supplied to the reaction chamber, stopping the application of the RF power and the supply of the reaction gas, purging the reaction gas remaining in the reaction chamber with the continuously supplied purge gas, and stopping the supply of the purge gas, and sequentially repeating the above operations until a thin film having a desired thickness is formed.

Description

Description CYCLIC PULSED PLASMA ATOMIC LAYER DEPOSITION METHOD Technical Field

[1] The present invention relates to a cyclic pulsed plasma atomic layer deposition method, and more particularly, to an apparatus and method for depositing a high quality thin film with a low RF power that does not give a damage to a silicon substrate by making a step of activating reaction gases and a step of cyclically applying an RF power overlap or not. Background Art

[2] As the width of a circuit line in a semiconductor is becoming ultra-narrow, there has been a need for forming a very thin film exhibiting superior characteristics at low temperature which is applied to an electrode film of a storage capacitor of a DRAM, a gate insulation film, or a copper diffusion prevention film forming part of the electrode film. In a method of forming a thin film using the chemical reactions of gaseous materials, an atomic layer deposition method, in which reaction gases are sequentially supplied and a cycle is repeated, is very useful for forming a very thin film.

[3] When plasma is generated in a reaction chamber where a silicon substrate is loaded in order to deposit a thin film on a surface of the substrate, semiconductor devices formed or being formed on the substrate, or the substrate, may be damaged. Thus, even if the pulsed plasma atomic layer deposition method is applied at the same temperature of the substrate and the same plasma energy, when the design rule of a semiconductor circuit is tightened, since the size of the semiconductor device further decreases, a damage can be easily generated so that the characteristic of the semiconductor device is deteriorated or yield directly relating to semiconductor manufacturing costs is reduced.

[4] U.S. Patent No. 5,916,365 filed by Arthur Sherman and entitled 'Sequential Chemical Vapor Deposition' discloses a pulsed plasma atomic layer deposition method in which plasma is applied at reaction gas supply cycle of an atomic layer deposition method to form a high quality thin film at low temperature. However, the patent does not suggest a method to solve a damage generated in a semiconductor substrate by plasma and problems in reliability in plasma ignition and repeatability of plasma generation.

[5] Korean Patent No. 10-0273473 and U.S. Patent No. 6,645,574 Bl filed by Chun- Soo Lee, et al. and entitled 'Thin Film Forming Method' And 'Method of Forming a Thin Film', respectively, disclose a chemical vapor method to provide materials under a time-division or pulse plasma environment. In the pulsed plasma atomic layer deposition method according to these patents, RF power is applied as soon as reaction gas is supplied in a reaction chamber while the supply of source gas and purge gas are stopped. In a process in which the supply of the source gas and purge gas is stopped and the supply of the reaction gas starts, the pressure and temperature in the reaction chamber undergo a turbulence state. When the RF power is applied to generate plasma, the pressure and temperature in the reaction chamber becomes unstable at each time. Thus, the reliability in plasma ignition and the repeatability of generation are deteriorated.

[6] U.S. Patent No. 6,200,893 B 1 filed by Ofer Sneh and entitled 'Radical-assisted Sequential CVD' discloses a method of forming a thin film by alternately applying a molecular precursor in form of a molecule activated by radical. However, the patent does not suggest a method to solve practical problems such as the damage generated in the semiconductor substrate, the reliability in plasma ignition, and the repeatability of generation, which occur when an activation method such as use of plasma is employed. Disclosure of Invention Technical Problem

[7] To solve the above and/or other problems, the present invention provides a cyclic pulsed plasma atomic layer deposition apparatus and method by which a high quality thin film is formed at low process temperature with a reduced damage to a semiconductor device or circuit on a substrate by alternately or mixedly applying a cycle of supply of reaction gas that generating plasma and a cycle of supply of reaction gas that does not generated plasma.

[8] Also, the present invention provides a cyclic

[9] pulsed plasma atomic layer deposition apparatus and method which improves reliability in plasma ignition and the repeatability of generation of plasma when plasma is applied in a cyclic pulsed plasma atomic layer deposition method. Technical Solution

[10] According to an aspect of the present invention, a high quality thin film can be deposited only by applying a low plasma energy without damaging a silicon substrate by only partly overlapping a reaction gas supply cycle and a plasma application cycle.

[11] According to another aspect of the present invention, reaction gas is activated by a reaction gas activation unit in a semiconductor processing step. Neutral radicals exhibiting a great chemical reactivity are generated by applying plasma to the activati on unit, at least the reaction gas is thermally activated, or both functions are applied. Then, plasma is generated in the reaction chamber to make the source gas absorbed on the substrate in the reaction chamber and the reaction gas react with each other. A thin film having a desired thickness can be formed on the substrate by alternately or mixedly applying the reaction gas supply cycle for generating plasma and a reaction gas supply cycle for not generating plasma. This method prevents deterioration of the characteristics of a semiconductor device having an ultra-narrow line width and improved yield very effectively. Further, a damage caused by the plasma to the semiconductor device or substrate can be remarkably reduced.

[12] According to another aspect of the present invention, the source gas is supplied to the reaction chamber and absorbed on the substrate loaded in the reaction chamber. Then, the supply of the source gas is stopped and in the subsequent step the source gas remaining in the reaction chamber is purged with the purge gas and the activated reaction gas is supplied. Otherwise, the source gas remaining in the reaction chamber is not purged with the purge gas while the activated reaction gas is directly supplied to the reaction chamber to purge the source gas. However, when the reaction chamber is purged, a turbulence state of pressure in the reaction chamber is generated. To avoid the turbulence state, after the turbulence state is stabilized after a predetermined time passes, plasma is applied to the reaction chamber. By doing so, the plasma application condition in the reaction chamber becomes stable so that the reliability of plasma ignition and the repeatability of the plasma generation are remarkably improved. Description of Drawings

[13] FIG. 1 is a flow chart for explaining a cyclic pulsed plasma atomic layer deposition method according to a first embodiment of the present invention ;

[14] FIG. 2 is a view schematically illustrating an apparatus for implementing the cyclic pulsed plasma atomic layer deposition method according to the present invention ;

[15] FIG. 3 is a graph showing a process order of a reaction gas supply cycle by time to implement the cyclic pulsed plasma atomic layer deposition method according to the present invention ;

[16] FIG. 4 is a graph showing an example of an unstable state of pressure in a reaction chamber in the process of FIG. 3;

[17] FIG. 5 is a graph showing an example of indicating the intensity of RF power applied to the reaction chamber by time in the process of FIG. 3; and

[18] FIG. 6 is a graph showing an example of a cycle of supplying reaction gas and applying RF power in a

[19] cyclic pulsed plasma atomic layer deposition method according to a second embodiment of the present invention. Mode for Invention

[20] Referring to FIGS. 1, 2, 3, 4, and 5, in a cyclic pulsed plasma atomic layer deposition method according to a first embodiment of the present invention, a silicon 218 is loaded on a substrate supporting platform 212 in a reaction chamber 200.

[21] In Step 1 (101 and 301 A), source gas including an element 'a' is supplied into the reaction chamber 200 through a source gas supply pipe 220 so that the source gas is absorbed on the silicon substrate 218.

[22] In Step 2 (102 and 302A), the source gas remaining in the reaction chamber 200 without being absorbed on the silicon substrate 218 is purged through an exhaust unit 208 using the purge gas. The purge gas is supplied using the source gas supply pipe 220, reaction gas supply pipes 222A and 222B, or a separate supply pipe.

[23] In Step 3 (103, 303A, and 313B), reaction gas including an element 'b' is passed through a reaction gas activation unit 206 and then is supplied to the reaction chamber via the reaction gas supply pipe 222A and 222B. Since the reaction gas is already activated by the reaction gas activation unit 206, the first part of the deposition process in which the reaction gas reacts with the source gas absorbed on the silicon substrate 218 is performed so that an 'a' or 'ab' thin film is deposited. There may be a case of forming the 'a' thin film instead of the 'ab' thin film. For example, when the element 'a' is titanium (Ti). the source gas is titanium chloride (TiCl ), the element 'b' is hydrogen 4 (H), and the reaction gas is hydrogen (H ) gas, the formed thin film is a titanium thin film including a titanium element.

[24] In Step 4 (104 and 304A), the reaction gas including the element 'b' is passed through the reaction gas activation unit 206 and is continuously supplied to the reaction chamber 200 via the reaction gas supply pipes 222A and 222B. In doing so, plasma is applied in the reaction chamber 200 so that radicals and ions are generated in the reaction chamber 200. Accordingly, the second part of the deposition process in which the 'a' or 'ab' thin film is deposed on the silicon substrate 218 is performed. However, when the source gas does not react, or hardly react, with the activate reaction gas in the reaction chamber without the assistance of plasma, Step 2 (102 and 302A) is skipped so that the remaining source gas in the reaction chamber 200 is purged as the reaction gas instead of purging the source gas remaining in the reaction chamber 200 with the purge gas.

[25] Finally, in Step 5 (105 and 305 A), the application of the plasma and the supply of the reaction gas are stopped and the reaction gas remaining in the reaction chamber 200 is purged with the purge gas.

[26] In the present invention, after the source gas remaining in the reaction chamber 200 is purged by supplying the purge gas in Step 2 (102 and 302A), the purge gas may be continuously supplied. In this case, when the supply of the reaction gas is stopped in Step 5 (105 and 305 A), the reaction gas remaining in the reaction chamber 200 is purged by the purge gas continuously supplied.

[27] Referring to FIGS. 3, 4, and 5, tl through t6 denote a start point and an end point of a process of each of Step 1 through Step 5. To form a desired thickness of a thin film deposited through the five steps, the above-described Step 1 though Step 5 are repeated by a desired number of N times. In the above process, the source gas, the reaction gas, and the purge gas are referred to as process gas. As described above, when the process gas in the reaction chamber 200 is purged with the purge gas in the above process, the purge gas may be continuously supplied or the supply of the purge gas may be stopped when purging is completed.

[28] FIG. 2 shows the configuration of a thin film deposition apparatus for implementing the cyclic pulsed plasma atomic layer deposition method according to the present invention. Referring to FIG. 2, the substrate supporting platform 212 on which the silicon substrate or wafer 218 can be loaded is installed in the reaction chamber 200. An RF matcher 202 and an RF power generation unit 204 for applying RF power to generate plasma are connected to the reaction chamber 200. The RF matcher 202 and the RF power generation unit 204 together are referred to as an RF power supply unit. A ground 214 that is one of electrodes can be connected to the substrate supporting platform 212 installed in the reaction chamber 200 or separately installed in the reaction chamber 200. A process gas supply and control unit 210 for controlling the supply of the source gas and the reaction gas through the source gas supply pipe 220 and the reaction gas supply pipe 222A and 222B through which the source gas and the reaction pass is connected to the reaction chamber 200. The process gas supply and control unit 210 can be configured to be able to supply and control of the purge gas.

[29] Typically, the purge gas is supplied to the reaction chamber 200 using an additional supply pipe (not shown). The reaction gas activation unit 206 for activating the reaction gas is connected between the reaction gas supply pipes 222A and 222B. The reaction gas activation unit 206 may include a reaction gas activation function simply by heat treatment, or a reaction gas activation function by plasma, or both functions. The heat treatment or plasma generation function may control the intensity of plasma energy. The exhaust unit 208 for exhausting the process gas is connected to the reaction chamber 200 through an exhaust pipe 228.

[30] The source gas typically includes a metal element. For example, in order to form a nitride thin film, the reaction gas is formed to include nitrogen. That is, when the source gas is formed to include one of compounds of titanium (Ti), tantalum (Ta), or tungsten (W) and the reaction gas is formed to be one of nitrogen (N ), ammonia (NH ), or hydrazine (N H ) gases, by using the method of the present invention, nitride thin films such as titanium nitride (TiN), tantalum nitride (TaN), or tungsten nitride (WN) are formed.

[31] The reaction gas may be formed of a mixture of a gas including the element 'b' and hydrogen (H ) gas. For example, the reaction gas may be formed of a mixture of nitrogen (N ) gas and hydrogen (H ) gas, a mixture of ammonia (NH ) and hydrogen (H ) gas, or a mixture of hydrazine (N H ) gas and hydrogen (H ) gas. In Steps 3 and 4, NH, NH , or H radicals are supplied onto the silicon substrate 218 so that a metal nitride thin film is formed.

[32] Also, when the reaction gas is formed of a gas including oxygen (O ) or a mixture of the gas including oxygen (O ) gas and hydrogen (H ) gas, an oxide thin film is formed. When the reaction gas is formed to include hydrogen (H ) gas, since the metal compound of the source gas is deoxidized in Steps 3 and 4, a metal thin film is formed.

[33] According to the present invention, in order to deposit a thin film having a desired thickness, Step 1 through Step 5 that constitute a basic process cycle in FIGS. 1, 3, 4, and 5 are repeated by a desired number of N times.

[34] According to the present invention, a reduced process cycle is made by skipping Step 4, in which plasma is applied, at every other basic process cycle, every third basic process cycle, or every fourth basic process cycle. By doing so, the plasma energy applied to the silicon substrate 218 can be reduced so that a damage to the silicon substrate 218 by the plasma can be remarkably reduced. For example, according to the present invention, the first process cycle in FIG. 6 is the basic process cycle, during which all of Steps 1 through Step 5 are sequentially performed. At the reduced process cycle that is the second process cycle, Step 4 of the basic process cycle is skipped. When the reduced process cycle is formed, only the process of applying plasma is skipped from Step 4 while the supply of the process gas is continued (not shown in FIG. 6).

[35] By doing so, the reaction gas activated when passing through the reaction gas activation unit 206 continues to perform the thin film deposition reaction with the source gas remaining on the silicon substrate 218 loaded in the reaction chamber 200 (the first part of the deposition process). Also, since the basic process cycle and the reduced process cycle become consistent, the entire process can be performed smoothly. Finally, to obtain a thin film having a desired thickness, a super-cycle, at which the basic process cycle and the reduced process cycle are alternately performed, is repeated by a desired number of times. Furthermore, a super-super-cycle can be configured and repeated by combining the basic process cycle and the reduced process cycle as desired under the condition of practicability.

[36] The configuration and the operation principle of the present invention will be described in detail with reference to the accompanying drawings.

[37] [First embodiment]

[38] As shown in the flow chart of FIG. 1, the thin film including the elements 'a' and 'b' is formed on the surface of the silicon substrate 218 loaded on the substrate supporting platform 212 installed in the reaction chamber 200 in the cyclic pulsed plasma atomic layer deposition method according to the present invention.

[39] Referring to FIGS. 1, 2, 3, 4, and 5, in Step 1 (101 and 301A), the source gas including the element 'a' is supplied to the reaction chamber 200 through the source gas supply pipe 220 to be absorbed on the surface of the silicon substrate 218.

[40] In Step 2 (102 and 302A), the supply of the source gas is stopped and the purge gas is supplied to the reaction chamber 200 so that the source gas remaining in the reaction chamber 200 without being absorbed on the silicon substrate 218 is purged. The supply of the purge gas is continued at the same time. Argon (Ar), helium (He), nitrogen (N ), or hydrogen (H ) gas is used as the purge gas.

[41] In Step 3 (103, 303A, and 313B), the reaction gas including the element 'b' is supplied to the reaction chamber 200 through the reaction gas activation apparatus 206 and the reaction gas supply pipes 222A and 222B. The reaction gas supplied to the reaction chamber 200 passes through the reaction gas activation unit 206. Here, radicals are picked up through the plasma generated in the reaction gas activation unit 206. The reaction gas is thermally activated in the reaction gas activation unit 206 or by the above-mentioned two functions.

[42] As described above, the reaction gas supplied in Step 3 is activated as it passes through the reaction gas activation unit 206, a deposition reaction with the source gas absorbed on the silicon substrate 218 loaded in the reaction chamber 200 occurs so that a thin film is formed on the silicon substrate 218. The turbulence state of pressure in the reaction chamber 200 caused by the supply and the discontinuation of supply of the reaction gas is stabilized. The purge gas is continuously supplied.

[43] In Step 4 (104, 304A, 314B, and 324C), the reaction gas including the element 'b' is continuously supplied to the reaction chamber 200 through the reaction gas activation unit 206 and the reaction gas supply pipes 222A and 222B and simultaneously the plasma is applied to the reaction chamber 200. The supplied reaction gas is activated by the reaction gas activation unit 206 and further activated by the plasma applied to the reaction chamber 200. Thus, the activate reaction gas has a more active deposition reaction with the source gas absorbed on the silicon substrate 218 so that the 'a' or 'ab' thin film is formed on the silicon substrate 218. The purge gas is continuously supplied.

[44] In Step 5 (105 and 305 A), the supply of the reaction gas to the reaction chamber 200 and the application of the plasma energy to the reaction chamber 200 are discontinued. The reaction gas remaining in the reaction chamber 200 is purged by the purge gas supplied continuously. Finally, to form a thin film having a desired thickness, Step 1 through Step 5 are repeated by a desired number of N times.

[45] As described above in the configuration of the present invention, the source gas and the reaction gas remaining in the reaction chamber 200 can be purged by not con- tinuously supplying the purge gas from Step 2 and supplying or not supplying the purge gas only in Step 2 and Step 5. Also, as defined in the present invention, Step 1 through Step 5 is the basic process cycle.

[46] According to the present invention, since the turbulence state of pressure of the reaction gas in the reaction chamber is stabilized in Step 3, the reliability in plasma ignition and the repeatability of plasma generation are remarkably improved.

[47] [Second embodiment]

[48] Referring to FIGS. 1, 2, 3, 4, 5, and 6, according to a second embodiment of the present invention, plasma is applied to the reaction chamber 200 in Step 4 (104 and 304A) of FIGS. 1 and 3 at every process gas supply cycle. In order to reduce a damage to the silicon substrate 218 by the plasma, the reduced process cycle is formed by skipping only the plasma application step of Step 4 (104 and 304A) from the basic process cycle formed of Steps 1 through Step 5 in FIG. 3 (not shown in FIG. 6), or skipping the entire Step 4. Thus, compared to a case of repeatedly performing the basic process cycle of FIGS. 1 and 3, plasma energy is further decreased in the whole deposition process. When the plasma energy is supplied by being minimized, a possibility of generation of a damage to the substrate by the plasma can be remarkably reduced.

[49] While this invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Industrial Applicability

[50] As described above, in the cyclic pulsed plasma atomic layer deposition method according to the present invention, by applying the process for activating the reaction gas in advance and the process for alternately applying plasma energy, low plasma energy as a whole is applied so that a thin film can be deposited without damaging a semiconductor substrate. Also, by supplying the reaction gas in a previously activated state to the substrate and delaying the time for generating plasma in the reaction chamber to be later than the time for supplying the reaction gas, the reliability of the plasma ignition and the repeatability of the plasma generation are improved. A high density atomic layer exhibiting a higher purity can be deposited at lower temperature. The method is also very effective to prevent deterioration of the characteristic of a semiconductor device having an ultra-narrow line width or improve yield thereof.

Claims

[1] 1. A method of depositing a cyclic pulsed plasma atomic layer to deposit a thin film on a surface of a substrate in a reaction chamber, the method comprising: supplying source gas to the reaction chamber to be absorbed on the surface of the substrate loaded in the reaction chamber; stopping the supply of the source gas, purging the source gas remaining in the reaction chamber without being absorbed by supplying purge gas, and continuously supplying the purge gas; passing reaction gas through a reaction gas activation unit and supplying the reaction gas to the reaction chamber; applying RF power to the reaction chamber in a state in which pressure in the reaction chamber is stable as the activated reaction gas is supplied to the reaction chamber; stopping the application of the RF power and the supply of the reaction gas, purging the reaction gas remaining in the reaction chamber with the continuously supplied purge gas, and stopping the supply of the purge gas; and sequentially repeating the above operations until a thin film having a desired thickness is formed.

2. The method of claim 1, wherein the supply of the purge gas is stopped after the source gas and the reaction gas remaining in the reaction chamber are purged by supplying the purge gas.

3. The method of claim 1, wherein, instead of purging the source gas remaining in the reaction chamber with the purge gas, the reaction gas is directly supplied in the subsequent step to purge the source gas remaining in the reaction chamber and simultaneously the reaction gas is supplied to the reaction chamber.

4. The method of claim 1, wherein the purge gas is selected from the group consisting of argon (Ar), helium (He), nitrogen (N ), and hydrogen (H ).

5. The method of claim 1, wherein the reaction gas comprises hydrogen element (H).

6. A method of depositing a cyclic pulsed plasma atomic layer to deposit a thin film on a surface of a substrate in a reaction chamber, the method comprising: supplying source gas to the reaction chamber to be absorbed on the surface of the substrate loaded in the reaction chamber; stopping the supply of the source gas, purging the source gas remaining in the reaction chamber without being absorbed by supplying purge gas, and continuously supplying the purge gas; passing reaction gas including nitrogen element (N) through a reaction gas activation unit to be activated and supplying the reaction gas to the reaction chamber; applying RF power to the reaction chamber in a state in which pressure in the reaction chamber is stable as the activated reaction gas is supplied to the reaction chamber; stopping the application of the RF power and the supply of the reaction gas, purging the reaction gas remaining in the reaction chamber with the continuously supplied purge gas, and stopping the supply of the purge gas; and sequentially repeating the above operations until a nitride thin film having a desired thickness is formed.

7. The method of claim 6, wherein the supply of the purge gas is stopped after the source gas and the reaction gas remaining in the reaction chamber are purged by supplying the purge gas.

8. The method of claim 6, wherein, instead of purging the source gas remaining in the reaction chamber with the purge gas, the reaction gas is directly supplied in the subsequent step to directly purge the source gas remaining in the reaction chamber and simultaneously the reaction gas is supplied to the reaction chamber.

9. The method of claim 6, wherein the purge gas is selected from the group consisting of argon (Ar), helium (He), nitrogen (N ), or hydrogen (H ).

10. The method of claim 6, wherein the source gas is a compound of transition metal such as titanium (Ti), tantalum (Ta), or tungsten (W) and the reaction gas comprises one selected from the group consisting of nitrogen (N ), ammonia (NH ), and hydrazine (N H gases, so that a deposited thin film includes a nitride of the transition metal.

11. The method of claim 6, wherein the reaction gas is formed of a mixture of gas including nitrogen element (N) and hydrogen (H ) gas.

12. A method of depositing a cyclic pulsed plasma atomic layer to deposit a thin film on a surface of a substrate in a reaction chamber, the method comprising: supplying source gas to the reaction chamber to be absorbed on the surface of the substrate loaded in the reaction chamber; stopping the supply of the source gas, purging the source gas remaining in the reaction chamber without being absorbed by supplying purge gas, and continuously supplying the purge gas; passing reaction gas including oxygen element (O) through a reaction gas activation unit to be activated and supplying the reaction gas to the reaction chamber; applying RF power to the reaction chamber in a state in which pressure in the reaction chamber is stable as the activated reaction gas is supplied to the reaction chamber; stopping the application of the RF power and the supply of the reaction gas, purging the reaction gas remaining in the reaction chamber with the continuously supplied purge gas, and stopping the supply of the purge gas; and sequentially repeating the above operations until an oxide thin film having a desired thickness is formed.

13. The method of claim 12, wherein the supply of the purge gas is stopped after the source gas and the reaction gas remaining in the reaction chamber are purged by supplying the purge gas.

14. The method of claim 12, wherein, instead of purging the source gas remaining in the reaction chamber with the purge gas, the reaction gas is directly supplied in the subsequent step to directly purge the source gas remaining in the reaction chamber.

15. The method of claim 12, wherein the reaction gas is formed of a mixture of gas including oxygen element (O) and hydrogen (H ) gas.

16. The method of claim 12, wherein the purge gas is selected from the group consisting of argon (Ar), helium (He), nitrogen (N ), or hydrogen (H ).

17. A method of depositing a cyclic pulsed plasma atomic layer to deposit a thin film on a surface of a substrate in a reaction chamber, the method comprising: supplying source gas to the reaction chamber to be absorbed on the surface of the substrate loaded in the reaction chamber; stopping the supply of the source gas, purging the source gas remaining in the reaction chamber without being absorbed by supplying purge gas, and continuously supplying the purge gas; passing reaction gas including hydrogen element (H) through a reaction gas activation unit to be activated and supplying the reaction gas to the reaction chamber; applying RF power to the reaction chamber in a state in which pressure in the reaction chamber is stable as the activated reaction gas is supplied to the reaction chamber; stopping the application of the RF power and the supply of the reaction gas, purging the reaction gas remaining in the reaction chamber with the continuously supplied purge gas, and stopping the supply of the purge gas; and sequentially repeating the above operations until a metal thin film having a desired thickness is formed.

18. The method of claim 17, wherein the supply of the purge gas is stopped after the source gas and the reaction gas remaining in the reaction chamber are purged by supplying the purge gas.

19. The method of claim 17, wherein, instead of purging the source gas remaining in the reaction chamber with the purge gas, the reaction gas is directly supplied in the subsequent step to directly purge the source gas remaining in the reaction chamber.

20. The method of claim 17, wherein the purge gas is selected from the group consisting of argon (Ar), helium (He), nitrogen (N ), or hydrogen (H ).

21. A method of depositing a cyclic pulsed plasma atomic layer to deposit a thin film on a surface of a substrate in a reaction chamber, wherein a basic process cycle comprises: supplying source gas to the reaction chamber to be absorbed on the surface of the substrate loaded in the reaction chamber; stopping the supply of the source gas, purging the source gas remaining in the reaction chamber without being absorbed by supplying purge gas, and continuously supplying the purge gas; passing reaction gas through a reaction gas activation unit to be activated and supplying the reaction gas to the reaction chamber; applying RF power to the reaction chamber in a state in which pressure in the reaction chamber is stable as the activated reaction gas is supplied to the reaction chamber; and stopping the application of the RF power and the supply of the reaction gas, purging the reaction gas remaining in the reaction chamber with the continuously supplied purge gas, and stopping the supply of the purge gas, and a reduced process cycle comprises: supplying source gas to the reaction chamber to be absorbed on the surface of the substrate loaded in the reaction chamber; purging the source gas remaining in the reaction chamber without being absorbed by stopping the supply of the source gas and supplying purge gas and continuously supplying the purge gas; passing reaction gas through a reaction gas activation unit to be activated and supplying the reaction gas to the reaction chamber; and sufficiently supplying the activate reaction gas to the reaction chamber to facilitate reaction with the source gas absorbed on the substrate in the reaction chamber and purging the reaction gas remaining in the reaction chamber with the continuously supplied purge gas, and wherein a super-cycle formed with the basic process cycle and the reduced process cycle is repeated by M times, where M≥l, until a thin film having a desired thickness is formed.

22. The method of claim 21, wherein the supply of the purge gas is stopped after the source gas and the reaction gas remaining in the reaction chamber are purged by supplying the purge gas.

23. The method of claim 21, wherein a supper-super-cycle formed with a combination of I numbered basic process cycles, where I≥l, and J numbered reduced process cycles, where J≥l, is repeated by N times, where N≥l, until a thin film having a desired thickness is formed.

24. The method of claim 21, wherein, instead of purging the source gas with the purge gas, the reaction gas is supplied in the subsequent step to directly purge the source gas remaining in the reaction chamber.

25. The method of claim 21, wherein the purge gas is selected from the group consisting of argon (Ar), helium (He), nitrogen (N ), and hydrogen (H ).

26. The method of claim 21, wherein the source gas is a metal compound and the reaction gas is formed of gas including hydrogen element (H).