TW200536636A - Highly crystalline silver powder and method for production thereof - Google Patents

Highly crystalline silver powder and method for production thereof Download PDF

Info

Publication number
TW200536636A
TW200536636A TW094103609A TW94103609A TW200536636A TW 200536636 A TW200536636 A TW 200536636A TW 094103609 A TW094103609 A TW 094103609A TW 94103609 A TW94103609 A TW 94103609A TW 200536636 A TW200536636 A TW 200536636A
Authority
TW
Taiwan
Prior art keywords
silver powder
weight
aqueous solution
parts
highly crystalline
Prior art date
Application number
TW094103609A
Other languages
Chinese (zh)
Other versions
TWI286090B (en
Inventor
Taku Fujimoto
Takuya Sasaki
Katsuhiko Yoshimaru
Hiroyuki Shimamura
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of TW200536636A publication Critical patent/TW200536636A/en
Application granted granted Critical
Publication of TWI286090B publication Critical patent/TWI286090B/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/07Metallic powder characterised by particles having a nanoscale microstructure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/16Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12014All metal or with adjacent metals having metal particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Conductive Materials (AREA)

Abstract

A method for producing a highly crystalline silver powder is characterized in that a first aqueous solution containing silver nitrate, a dispersing agent and nitric acid is admixed with a second aqueous solution containing ascorbic acid, wherein the dispersing agent is preferably poly(vinyl pyrrolidone) or gelatin. A highly crystalline silver powder produced by the above method preferably has a D90/D10 of 2.1 to 5.0, a diameter of a crystallite greater tahn 300 AA, an average particle diameter D50 of 0.5 to 10 mum, and exhibits thermal shrinkage in the longitudinal direction at 700 DEG C of within &plusmn 3 %. The above highly crystalline silver powder is composed of fine particles with good dispersibility, broad particle size distribution, and large crystallites.

Description

200536636 九、發明說明: 【發明所屬之技術領域】 =明係有關於一種高結晶性銀粉及其製造方 :兄明之,係有關於一種高結晶性銀 中將例如晶片元件、電 ::方法其 精、、、田化而旎夠形成具有高密度及言 ^ 電性膏劑、特別是對微細的線:可#性者之導 夠开彡点且古^ 、'路或,寻層而平滑的塗膜等能 多勺幵^成具有鬲密度及高 古止 製造,姑t^ 又且呵可罪性者之導電性膏劑的 ::故較佳;由於係微粒、分散性良好、粒度分布不致 太乍峭而比較寬緩、微晶較大 , ^ fxm ^ ,用作導電性膏劑的原料 #銀私對貧劑的分散性以及銀粉 性為相當優異,而能夠使 胃Μ中的填充 更加精細化,可將由導雷 和或電路# 收縮性相當優異、同彳:得到的银厚膜製成耐熱 【先前技術】^比電阻(電阻率)較低者。 以往作為形成電子元件等的電極或 一種導電性好粗ώΑ你丨\ ^ 路之方法’將係 枓的銀粕分散於膏劑中而形 將此導電性膏劑印刷於基板後,藉由對導電性愚劑, 固化使其硬化而形成銀厚膜以製成電路的倍燒或 然而近年來,基於電子儀器的高機能化而要求且 小型高密度化,因此,即伯β 、 晋衣電子裝置具 粉,在製成導電性膏劑時,::::二膏劍的材料之銀 在填充性或分散性方面為相當二方=微教4 所謂分散性係,只要是未事先 ’於本發明中 °兄明’則係指銀粉200536636 IX. Description of the invention: [Technical field to which the invention belongs] = Ming is related to a highly crystalline silver powder and its manufacturing method: Xiong Mingzhi is related to a highly crystalline silver admiral such as wafer element, electricity :: method It is enough to form high-density and high-quality electric pastes, especially for fine lines: the guide of the sexist is enough to open the point and the ancient ^, 'road or, look for layers and smooth The coating film can be multi-spooned into a conductive paste with a density of 及 and a high ancient quality, and it is also guilty of a conductive paste :: so it is better; because it is a fine particle, has good dispersibility, and does not cause particle size distribution Too steep and relatively wide, with large crystallites, ^ fxm ^, used as a raw material for conductive paste # 银 私 dispersibility of poor agent and silver powder is quite excellent, and can make the filling in the stomach M more fine It can be made from the light-conducting circuit and the circuit # which have excellent shrinkability and the same: the obtained silver thick film is made of heat-resistant [prior art] ^ lower specific resistance (resistivity). In the past, it has been used as an electrode for forming electronic components or a method with good conductivity. A method for dispersing silver paste in a paste is used to print this conductive paste on a substrate. It can be cured by curing and hardening to form a silver thick film to make a circuit. However, in recent years, electronic devices have been required to be highly functional and compact and high-density. Therefore, the primary beta, Jinyi electronic devices Powder, when made into a conductive paste: :::: The silver of the material of the second paste sword is quite bipartite in terms of fillability or dispersibility = Weijiao 4 The so-called dispersibility system, as long as it is not previously used in the present invention ° Brother Ming 'refers to silver powder

2213-6834-PF 5 '200536636 度。例刀放性’意指銀粉的原始粒子之間凝聚的難易 :比率二所謂分散性良好的狀態係指原始粒子之間凝聚 係指肩或元全不凝聚的狀態;所謂分散性很差的狀態 ' :°子之間凝聚的比率較多或完全凝聚的狀態。 基板上tr印刷者上述導電性膏劑的基板,通常使用於陶瓷 二 I組件等放熱較大的部分等。然而,在此陶瓷基 :刷導電性膏劑時,由於m板的熱收縮率與由印2213-6834-PF 5 '200536636 degrees. The example of "knife release" means the difficulty of agglomeration between the original particles of silver powder: ratio two, the so-called good dispersibility state refers to the state that the original particles are agglomerated, and the shoulders or elements are not agglomerated; the so-called poor dispersibility state ': A state in which the ratio of agglomeration is large or completely agglomerated. The substrate printed with the above-mentioned conductive paste on the substrate tr is usually used for a part with a large heat radiation, such as a ceramic II device. However, in this ceramic-based: conductive brush, the thermal shrinkage of

1者電性㈣所生成的銀厚膜之熱收縮率—般而言並不 目=故在梧燒時陶竟基板和銀厚膜之間會有或剝離或基 反…發生變形之虞。目此m板的熱收縮率與由印 刷者導電性膏劑所形成的銀厚膜之熱收縮率儘量採取接近 的值為較佳。 作為在這樣焙燒時的上述銀厚膜的熱收縮之一項原 因,-般認為係導電性膏劑中的銀粉在培燒時會引起燒結 :故…p,-般認為銀粉係由微小的微晶所構成的多結 晶體’為了形成銀厚膜而在對包含㈣的導電性膏劑進行 焙燒時銀粉中的微小的微晶被燒結,於銀厚膜生成的前後 發生尺寸改變而引起熱收縮。因對於得到含有熱收縮 較小的銀粉之導電性膏劑,銀粉中的微晶儘可能大些,儘 量不使微晶產生燒結較佳。 並且,近年來電路#高頻特性之改善或使培燒前後的 基板之尺寸精度更加提昇等都受到要求,因此,作為形成 銀厚膜的基板,取代如上述—般的陶瓷基板而使用ltcc (Low Temperature C〇-fireci Ceramic:低溫共焙燒陶瓷) 2213-6834-PF 6 200536636 基板。甚且,該LTCC基板由於係對LTCC基板的生薄板與 包含銀粉等的低電阻導體之導電性膏劑同時進行燒結而得 到者,故相較於使用上述一般的陶瓷基板並將導電性膏劑 印刷於其上而形成銀厚膜的電路之技術,則以較少的焙燒 次數即能完成、容易控制陶究介電質膜厚、由導電性^ 所形成的電路之導體電阻較低、纟易改善基板的表面平; 1*生,由沒些觀點看來為較佳。然而,由於的尺寸穩定 性非常優異,即使係使用於此LTCC的導電性膏劑的材料之 銀粉亦強烈要求具更小的熱收縮,因#,銀粉中具較大的 微晶更受到高度的期待。 而且,如此銀粉中的微晶若較大,則一般而言銀粉的 不純物含量會降低,基於此,由於銀厚膜所形成的電路之 比電阻容易降低’故不僅是進行如上述的培燒所形成的電 路、、而且即使是以非焙燒所形成的電路也可使用含有銀粉 的導電性膏劑’由此觀點看來亦較佳。 如上述,使用於導電性膏劑的銀粉期望其為微粒、分 散性良好、粒度分布不致太窄峭而比較寬緩、微晶較大者。 對此,日本國專利申請案(特開2000〜17〇6號公報) 揭露,使硝酸銀水溶液與將丙烯酸單體溶解於卜抗壞血酸 水溶液中的溶液進行混合並同時產生反應之高結晶體銀粒 子的製造方法。若依據該方法,則可得到微晶尺寸為權 Α以上、粒徑的範圍在2〜4//m的狹窄範圍之高結晶性銀 粉。 然而,日本國專利申請案(特開2〇〇〇〜17〇6號公報)The thermal shrinkage of the silver thick film produced by one of them is generally inconspicuous. Therefore, there may be separation or peeling between the ceramic substrate and the silver thick film during the sintering, which may cause deformation. Therefore, it is preferable that the thermal shrinkage of the m-plate is as close as possible to the thermal shrinkage of the silver thick film formed by the conductive paste of the printer. As one of the reasons for the thermal shrinkage of the above-mentioned silver thick film during such firing, the silver powder in the conductive paste is generally considered to cause sintering during firing: so ... p,-the silver powder is generally considered to be composed of fine crystallites. In order to form a silver thick film, the formed polycrystalline body is sintered when the conductive paste containing rhenium is fired, and the microcrystals in the silver powder are sintered before and after the silver thick film is formed, causing thermal contraction. In order to obtain a conductive paste containing a silver powder having a small heat shrinkage, the crystallites in the silver powder are as large as possible, and it is better not to sinter the crystallites as much as possible. In addition, in recent years, the improvement of the high-frequency characteristics of the circuit # or the improvement of the dimensional accuracy of the substrate before and after firing have been required. Therefore, as a substrate for forming a silver thick film, instead of the ceramic substrate as described above, ltcc ( Low Temperature Co-fireci Ceramic: 2213-6834-PF 6 200536636 substrate. In addition, the LTCC substrate is obtained by sintering a green sheet of the LTCC substrate and a conductive paste containing a low-resistance conductor such as silver powder at the same time, so the conductive paste is printed on The technique of forming a silver-thick film on it can be completed in a small number of firing cycles, it is easy to control the thickness of the dielectric film, the electrical resistance of the circuit formed by the electrical conductivity ^ is low, and it is easy to improve. The surface of the substrate is flat; it is better from a few viewpoints. However, due to its excellent dimensional stability, even the silver powder of the conductive paste used in this LTCC is strongly required to have a smaller heat shrinkage. Because of this, large crystallites in silver powder are highly expected. . In addition, if the crystallites in the silver powder are large, the impurity content of the silver powder will generally decrease. Based on this, the specific resistance of the circuit formed by the silver thick film is easily reduced, so it is not only performed as described above. It is also preferable from the viewpoint that a conductive paste containing silver powder can be used for a formed circuit and a circuit formed by non-baking. As described above, it is desirable that the silver powder used for the conductive paste be fine particles, have good dispersibility, have a relatively narrow particle size distribution and are relatively wide, and have large crystallites. In response, the Japanese patent application (Japanese Patent Application Laid-Open No. 2000 ~ 1706) discloses the production of highly crystalline silver particles in which a silver nitrate aqueous solution and a solution in which an acrylic monomer is dissolved in an ascorbic acid aqueous solution are mixed and reacted at the same time. method. According to this method, a highly crystalline silver powder having a crystallite size of at least A and a narrow particle diameter range of 2 to 4 // m can be obtained. However, the Japanese patent application (Japanese Laid-Open Patent Publication No. 2000 ~ 1706)

2213-6834-PF 7 200536636 所述㈣粉,雖為微粒且微晶亦較大,但在㈣左 右的南溫之熱收縮率難以戀媒彡p 1 文侍彳艮小。此種銀粉雖然微晶非 常大,但在高溫的熱收縮率仍相當大,此理由推測係起因 於該銀粉的粒徑之範圍為2〜4//m,粒度分布太窄_,基於 在銀粉之間形成m ’致銀粉的填充性減低之故。因此, 若使用於製成導電性膏劑以形成銀厚膜或利用LTCC基板 以形成電路,則在電路的形成前後之尺寸變化增大,而有2213-6834-PF 7 200536636 Although the powders are fine particles and large crystallites, the thermal contraction rate at the south temperature is difficult to match with the media. Although this kind of silver powder has very large crystallites, the thermal shrinkage rate at high temperature is still quite large. This reason is presumed that the particle size of the silver powder is in the range of 2 ~ 4 // m, and the particle size distribution is too narrow. The formation of m 'causes the filling property of the silver powder to decrease. Therefore, if it is used to make a conductive paste to form a silver thick film or to form a circuit using an LTCC substrate, the dimensional change before and after the formation of the circuit increases, and

-般陶竟基板或LTCC基板、特別是LTCC&板很容易發生 麵曲的問題。 因而,本發明的目的在於提供一種高結晶性銀粉及盆 製造方法,其中係微粒、分散性良好、粒度分布不致太窄 峭而比較寬缓、微晶較大者。 【發明内容】 對於這種實情’本發明者經專心致志研究的結果發 現,若藉由將含有餐銀、分散劑以及㈣酸之第溶液、 與含有抗壞血酸之第2水溶液加以混合的方法來製造銀 粉,則能夠得到係微粒、粒度分布不致太窄^比較寬緩、 且微晶較大、並可將由導電性膏劑所得到的銀厚膜製成耐 熱收縮性相當優異者之高結晶性銀粉,以至完成本㈣。 亦即’係-種高結晶性銀粉之製造方法,其特徵在於, 對於含有韻銀、分散劑以及石肖酸之第〗水溶液、與含有 抗壞血酸之第2水溶液加以混合。 結晶 並且,提供一種高結晶性銀粉之製造方 性銀粉之製造方法中,其特徵在於:前 法,於上述高 述分散劑係聚-The problem of surface warpage is likely to occur on a ceramic substrate or an LTCC substrate, especially an LTCC & plate. Therefore, an object of the present invention is to provide a highly crystalline silver powder and a method for producing a pot, in which the particles are fine particles, have good dispersibility, have a relatively narrow particle size distribution, but are relatively broad and have large crystallites. [Summary of the Invention] In response to this fact, the present inventors conducted intensive research and found that if silver powder is prepared by mixing a second solution containing table silver, a dispersant, and acetic acid with a second aqueous solution containing ascorbic acid, , It can obtain system fine particles, the particle size distribution is not too narrow ^ relatively wide, and the crystallites are large, and the silver thick film obtained from the conductive paste can be made into a highly crystalline silver powder with excellent heat shrinkage resistance, and so on. Complete this book. That is, a method for producing a 'series-type highly crystalline silver powder, which is characterized by mixing a second aqueous solution containing silver silver, a dispersant, and lithokic acid with a second aqueous solution containing ascorbic acid. Crystallization In addition, in a method for producing a highly-crystalline silver powder, a method for producing a silver powder having a high crystallinity is characterized in that the former method is

2213-6834-PF 8 200536636 乙烯吡咯烷酮。 又提供一種高結晶性銀粉之製造方法,於上述高結 性銀粉之製造方法中’其特徵在於〔前述分散劑係明膠 而且,提供一種高結晶性銀粉之製造方法,於上述高 結晶性銀粉之製造方法中,其特徵在於:前述第丨水溶液 係,相對於梢酸銀100重量份,則調配聚乙烯吡咯烷酮5 重量份〜60重量份、硝酸35重量份〜7〇重量份。 並且,提供一種高結 結晶性銀粉之製造方法中2213-6834-PF 8 200536636 vinylpyrrolidone. Also provided is a method for producing a highly crystalline silver powder. In the above method for producing a highly crystalline silver powder, it is characterized in that [the dispersant is gelatin, and a method for producing a highly crystalline silver powder is provided. The manufacturing method is characterized in that the aforementioned first aqueous solution system is prepared with 5 to 60 parts by weight of polyvinylpyrrolidone and 35 to 70 parts by weight with respect to 100 parts by weight of silver shoot acid. In addition, a method for producing a high-junction crystalline silver powder is provided.

於上述高 1水溶液 晶性銀粉之製造方法, ’其特徵在於:前述第 係,相對於硝酸銀100重量份,則調配明膠重量份 重量份、硝酸35重量份〜70重量份。 又提供一種高結晶性銀粉之製造方法,於上述高結晶 性銀粉之製造方法中,其特徵在於:料前㈣ι水溶液 與前述第2水溶液係由相對於前述第!水溶液中所調配的In the above-mentioned method for producing a crystalline silver powder having a high aqueous solution, the foregoing system is characterized in that, based on 100 parts by weight of silver nitrate, a part by weight of gelatin and 35 parts by weight to 70 parts by weight of nitric acid are blended. There is also provided a method for producing highly crystalline silver powder. In the above method for producing highly crystalline silver powder, it is characterized in that the aqueous solution before the material and the second aqueous solution are compared with the first! Formulated in aqueous solution

重量份’則以第2水溶液中所調配的抗壞血酸 3〇重1份〜90重量份所形成的比率加以混合。 而且,提供一種高結晶性銀粉之製造方法 結晶性銀粉之製造方法中,其特徵在於:對於前述第^ 溶液與前述第2水溶液係由相對於前述第2水溶液中所調 配的抗壤—血酸_重量份,則以第」水溶液中所調配的確 酸40、重量份〜15〇重量份所形成的比率加以混合。 並且,提供一種高結晶性銀粉,其、 高結晶性銀粉之製造方法加以製造。… 、·以上述 又為-種高結晶性銀粉,係於上述高結晶性銀粉之製Parts by weight 'are mixed at a ratio of 30 parts by weight to 90 parts by weight of ascorbic acid prepared in the second aqueous solution. In addition, there is provided a method for producing a highly crystalline silver powder, wherein the crystalline silver powder and the second aqueous solution are prepared from the anti-soil-blood acid prepared from the second aqueous solution. _ Parts by weight, it is mixed at a ratio of 40 to 150 parts by weight of the true acid prepared in the second aqueous solution. In addition, a highly crystalline silver powder is provided, which is produced by a method for producing a highly crystalline silver powder. …, Based on the above, it is also a kind of highly crystalline silver powder, which is based on the above-mentioned highly crystalline silver powder

2213-6834-PF '200536636 造方法所製造者,其特徵在於:微晶徑係3〇〇 A以上。 而且,係一種高結晶性銀粉,其特徵在於:平均粒徑 D 5 〇 為 0 · 5 /z m 〜10 /z m 〇 並且,係一種咼結晶性銀粉,其特徵在於:於了⑽。C 的熱收縮率為± 3%以内。 又為一種高結晶性銀粉,其特徵在於:“/Di。為 2· 1 〜5_ 0。 •微晶徑為 7〇〇°C的長 而且,係一種高結晶性銀粉,其特徵在於 300 A以上、平均粒徑D5。為〇 5/zm〜1〇#m、於 度方向的熱收縮率為土 3%以内。 並且’係-種高結晶性銀粉,其特徵在於:Dg"D 2. 1 〜5. 0。 發明效果: 有關本發明的高結晶性銀粉由於係微粒、分散 =、粒度分布不致太窄嗜而比較寬緩、微晶較大,故用: =性㈣的原料時,銀㈣㈣的分散性以及銀 電性貧劑中的填充性為火 ’ Λ Α 為相备叙異,而能夠使由銀厚膜所形 成的電極或電路等更為 f文馮精細化,可將由導電性膏 的銀厚膜製成耐熱收縮性 ^ , ^ Be ,, 序田杬異、同時比電阻較低者。 並且,有關本發明的高处曰 、、口日日陡銀秦之製造方法能夠有效地 k上述有關本發明的高結晶性銀粉。 【實施方式】 (有關本發明的高結晶性銀粉) 有關本發明的高結 銀粉實質上係-種粒狀的粉2213-6834-PF '200536636 The manufacturer is characterized in that the crystallite size is 300 A or more. Furthermore, it is a highly crystalline silver powder characterized in that the average particle diameter D 50 is 0 · 5 / z m to 10 / z m 〇 In addition, it is a samarium crystalline silver powder characterized in that it is osmium. The thermal shrinkage of C is within ± 3%. It is also a highly crystalline silver powder, which is characterized by "/ Di. It is 2 · 1 to 5_ 0. • It has a long crystallite size of 700 ° C and is a highly crystalline silver powder, which is characterized by 300 A Above, the average particle diameter is D5. It is 0 / zm ~ 10 # m, and the heat shrinkage rate in the degree direction is within 3%. And it is a kind of highly crystalline silver powder, which is characterized by: Dg &D; D 2. 1 ~ 5. 0. Effect of the Invention: The highly crystalline silver powder of the present invention is relatively loose and has a large crystallite size because the particles are fine particles, dispersed =, and the particle size distribution is not too narrow, so it is used as: The dispersibility of silver tincture and the filling property of silver-electricity-poor agents are fire, and Λ Α is quite different. It can make electrodes or circuits formed by a thick silver film more detailed. The thick silver film of the conductive paste is made of heat-shrinkable ^, ^ Be ,, and has a low specific resistance at the same time. In addition, the method for manufacturing the high-yield and silver-yin silver Qin of the present invention It is possible to effectively solve the above-mentioned highly crystalline silver powder according to the present invention. [Embodiment] (Related high crystallinity of the present invention Powder) of the present invention is related to high junction silver-based substantially - type of granular powder

2213-6834-PF 10 '200536636 肢。有關本發明的高結晶性銀粉係,平均粒徑h。為〇 ::―、而1/z 較佳。平均粒徑L若在該範, 則使用於導電性膏劑時,由㈣粉在導電性膏劑内 性相當優異’同時能夠使由銀厚膜所形成的電路等^ 另方面,平均粒徑d5„若小於0.5“, 則由於銀粉的回收固難,故不佳;若超過iq “, 銀粉之間凝聚情形相當多,故不佳。此處所謂平均粒^2213-6834-PF 10 '200536636 Limb. The highly crystalline silver powder of the present invention has an average particle diameter h. 〇 :: ―, and 1 / z is preferred. If the average particle diameter L is within this range, when used in a conductive paste, the powder has excellent internal properties of the conductive paste. At the same time, the circuit formed by a thick silver film can be used. ^ On the other hand, the average particle diameter is d5. If it is less than 0.5 ", the recovery of silver powder is difficult, so it is not good; if it exceeds iq", there are quite a lot of aggregation situations between silver powders, so it is not good. The so-called average particle ^

係心以激光繞射散射法所求得的體積平均粒徑 分布50%的粒徑。 丨系積 有關本發明的高結晶性銀粉係微晶徑為3〇〇 a以上、 較佳。微晶徑若在該範圍内’則將含有該 性貧劑塗布電基板’力…咅燒而形成了由 率::=電路等之時,培燒前後的銀厚膜之熱收縮 :、Μ基板的熱收縮率相接近,對於或是銀厚膜由陶究 土反剝離或是H基板隨著銀厚膜尺寸的改變而變形的情 形加以抑制的效果相當大,故較佳。 道士另Γ方面,微晶徑若小於300 Α,則將含有該銀粉的 性貧劑塗布於陶竟基板’加以焙燒而形成了由銀厚膜 =成的電路等之時,由於培燒前後的銀厚膜之收縮比陶 武:板的收縮還要大’則或是銀厚膜容易由陶瓷基板剝離 '疋陶瓷基板容易隨著銀厚膜尺寸的改變而變形,故不 ^此處所謂微晶徑係指對銀粉試才策料χ㈣繞射所得 到的、由各晶面的繞射角之尖峰的半值寬度所求得 徑之平均值。The particle diameter of 50% of the volume average particle size distribution obtained by the laser diffraction scattering method.丨 Series The microcrystalline diameter of the highly crystalline silver powder system of the present invention is preferably at least 300 a. If the crystallite diameter is within this range, the electric substrate containing the poor solvent is coated on the electric substrate. The force is ... The thermal shrinkage of the substrate is similar, and the effect of suppressing the thick peeling of the silver thick film from ceramite or the deformation of the H substrate with the change of the size of the silver thick film is quite large, so it is preferable. In terms of Taoism, if the crystallite diameter is less than 300 Å, a thinner containing the silver powder is coated on a ceramic substrate and baked to form a circuit made of a thick film of silver, etc. The shrinkage of the silver thick film is larger than that of Tao Wu: the shrinkage of the plate is larger, or the silver thick film is easier to peel off from the ceramic substrate. The ceramic substrate is easily deformed with the change of the size of the silver thick film. The crystal diameter refers to the average value of the diameters obtained from the half-value width of the peak of the diffraction angle of each crystal plane, which is obtained by testing the χ㈣ diffraction of the silver powder.

2213-6834-PF 11 200536636 有關本發明的高結晶性銀粉係,Ds()/D“通常為 2.1~5.0、而2.5~4.7較佳。再者,於本發明中,κ。與“ 係各別表示基於激光繞射散射式粒度分布測定法之累積分 布10容量%及90容量%的中值粒徑(_。^/Di。係表二 蒼差不齊的指標,D9〇/D1d若較大,則表示粒度分布的參差 不齊程度較大。DWD4在上述範圍内,則銀粉的粒度分 布不致太窄峭而比較寬緩, 又刀 若以使用該銀粉的導電性膏劑來形成電路,則由於銀 粉的填充性相當優異,因此電路的耐熱收縮性易成為相二 優異者、亦即在烙燒前後的電路之尺寸改變易成為較: 者,故較佳。 ,另一方面’WDh若小於2.卜則銀粉的粒度分布太 峭,以使用該銀粉的導電性膏劑來形成電路的話,由於 粉的填充性很差,故電路的耐熱收縮性易成為不良者、、: 即在培燒前後的電路之尺寸改變易成為較大者,故不户 並且,WD】。若超過5.〇,則銀粉的粒度分布太過寬緩^ :=粉=電性膏劑來形成電路的話,由於銀粉的填 充!·生很差,故電路的耐熱收 燒前後的電路之尺寸改變易成為較大者j不佳亦即在培 的熱高Γ性銀粉係’% 7°°°c的長度方向 為以以内、而土 2%以内較佳。再者,於 本^明中,所謂± x%以内 ; 所謂於mv的抑方/ x%。於本發明中, 丸粒的試樣,熱機械分析⑽)所測定的2213-6834-PF 11 200536636 Regarding the highly crystalline silver powder system of the present invention, Ds () / D "is usually 2.1 to 5.0, and preferably 2.5 to 4.7. Furthermore, in the present invention, κ. And" are each Do not indicate the median particle size (_. ^ / Di.) Of the cumulative distribution based on the laser diffraction scattering particle size distribution measurement method of 10% by volume and 90% by volume. A large value indicates a large degree of unevenness in the particle size distribution. When DWD4 is within the above range, the particle size distribution of the silver powder is not too narrow and relatively wide, and if the conductive paste using the silver powder is used to form a circuit, Because silver powder has excellent filling properties, the heat shrinkage resistance of the circuit is likely to be the second best, that is, the size change of the circuit before and after burning is easy to be better, and on the other hand, if 'WDh is less than 2. The particle size distribution of the silver powder is too steep. If the conductive paste of the silver powder is used to form a circuit, the powder has a poor filling property, so the heat shrinkage resistance of the circuit is likely to be poor, that is, before and after firing. The size of the circuit changes easily to become larger, WD】. If it exceeds 5.0, the particle size distribution of silver powder is too wide ^: = powder = electrical paste to form a circuit, because the silver powder is filled! · Poor performance, so the heat resistance of the circuit is poor. The change in the size of the circuit before and after firing tends to become the larger one, which is not good, that is, the heat direction of the cultured silver powder is less than 7% ° C, and the soil is preferably less than 2% in length. In the present invention, the so-called within ± x%; the so-called mv / x%. In the present invention, the sample of the pellet, thermomechanical analysis ⑽)

2213-6834-PF 12 200536636 方向的熱收縮率。 有關本發明的高結晶性銀粉 °C焙燒的銀塗膜之電 較低溫、例如300 晶性銀粉燒結,燒結:二’即使在低溫使高結 如此於,梧燒的: = 為較低者。再者, 於微晶徑較大以致銀粉 藏乂低的理由推測係基 有關本發明的,=1的移動較為順暢之故。 O.lOmVg〜1.0 ffi2/g、@ n 9n 2/糸比表面積通常為2213-6834-PF 12 200536636 Thermal shrinkage in the direction. Regarding the high-crystalline silver powder of the present invention, the electrical properties of the silver coating film baked at ° C are relatively low temperature, for example, 300 crystalline silver powder is sintered and sintered: two 'Even if the high junction is made at low temperature, the sintered: = is the lower one. Furthermore, it is presumed that the reason why the movement of = 1 is relatively smooth for the reason that the crystallite diameter is large and the silver powder Mastiff is low. O.lOmVg ~ 1.0 ffi2 / g, @ n 9n 2 / 糸 specific surface area is usually

而 〇· 20m /g〜〇· 9〇mV 面積若小於0. l〇m2/ 仏該比表 g則因基於銀厚膜的電極或電路之井 細化易發生困難,故 电㈣電路之精 2/ ^ 侄。並且,該比表面積若超過10And if the area of 〇20m / g ~ 0.99mV is less than 0.10m2 /, this ratio g is difficult to refine due to the thinning of electrodes or circuits based on the silver thick film, so the precision of the electric circuit 2 / ^ Nephew. If the specific surface area exceeds 10

m /g,則由於銀粉的膏 U 明φρ田^主 用^化易產生困難,故不佳。於本發 中斤°月比表面積係指bet比表面積。 有關本發明的宾曰 ·、 间、,、口日日性銀粉係,輕敲密度(tap density)通常為 3. 8/3 p 私 Φ- 1 —命/ 上、而 4· Og/cm3〜6· 0g/cm3 較 度(tapdensity)若在該範圍内’則在製作導電 性貧劑時高結晶性銀粉巾# # ^ & % 容易製得導電性膏劑劑之填充性良好,而 ^ 並且於形成導電性貧劑的塗膜時, 藉由在高結晶性銀粉之間形成適度的空隙而在焙燒塗膜 時’由塗膜脫灰易於進行,培燒膜密度有所改善,此結果 由於容易降低銀厚膜的電阻故較佳。有關本發明的高結晶 性銀粉可藉由例如下述的方法來加以製造。 (有關本發明的高結晶性銀粉之製造方法) 有關本發明的高結晶性銀粉之製造方法係’對於含有 石肖酸銀、分散劑以及硝酸之第i水溶液、與含有抗壞血酸m / g, it is not good because the paste U of the silver powder is difficult to be used for the main application. In the present invention, the monthly specific surface area refers to the bet specific surface area. Related to the present invention: Japanese, Japanese, Japanese, Japanese silver powder, tap density is usually 3. 8/3 p private Φ-1-life / up, and 4. · Og / cm3 ~ 6 · 0g / cm3 If the tapdensity is within this range, then the high crystallinity silver powder towel ## ^ &% is easy to produce a conductive paste with good filling properties, and ^ and When forming a coating film of a conductive lean agent, by forming a moderate gap between highly crystalline silver powders, when the coating film is fired, the deliming from the coating film is easily performed, and the density of the fired film is improved. It is preferable to reduce the resistance of the silver thick film. The highly crystalline silver powder of the present invention can be produced by, for example, the following method. (Production method of the highly crystalline silver powder of the present invention) The production method of the highly crystalline silver powder of the present invention is a method for the i-th aqueous solution containing silver lithionate, a dispersant, and nitric acid, and ascorbic acid

2213-6834-PF 13 200536636 之第2水溶液加以混合者。 、於本發明中所謂第!水溶液係指含有硝酸銀、分散劑 以及石肖酸的水溶液。Y令& -φ) ^ I t 料,周〗水溶液所使用的水係純 水、離子交換水、超純水等,由於防止不純物混入銀粉中, 故較佳。作為本發明所使用的硝酸銀並未特別加以限定, 固態者以及調製成水溶液者之任一種皆可使用。2213-6834-PF 13 200536636 The second aqueous solution is mixed. In the present invention, the so-called first! An aqueous solution is an aqueous solution containing silver nitrate, a dispersant, and lithocholic acid. Y order &-φ) ^ I t material, weekly water-based pure water, ion-exchanged water, ultrapure water, etc. used in the aqueous solution are preferable because impurities are prevented from being mixed into the silver powder. The silver nitrate used in the present invention is not particularly limited, and either a solid state or an aqueous solution can be used.

作為本發明所使用的分散劑,可舉出例如:聚乙烯吼 嘻㈣mp)、明膠、聚乙二醇、聚乙稀醇等。再者,於 本發明中所謂明膠係以包含骨㈣μ來加以使用。於本 發明所使料分散劑之中,$乙賴錢酮、明膠由於特 別能夠提昇銀粉的耐熱收縮性,故較佳。於本發明中,藉 由將分散劑調配於第i水溶液’可改善銀粉的分散性,同 時銀粉係微粒並有使其粒度分布不致太窄峭而比較寬緩的 作用。 作為本發明所使用的硝酸並未特別加以限定,可使用 濃硝酸、稀硝酸的任一種。於本發明巾,藉由將硝酸調配 於第1水溶液,由於可加以控制使得從銀離子生成銀的反 應速度變得比較慢,故有使銀粉的粒度分布不致太窄崎而 比車乂覓緩且增大微晶的作用。再者,若未調配硝酸而製 造銀粉,則由於從銀離子生成銀的反應速度太快,反應立 即發生,故相較於如本發明調配硝酸來製造的情形,則所 得到的銀粉容易成為粒徑較小、且微晶徑較小者。 第1水溶液係,分散劑為聚乙烯吡咯烷酮時,相對於 硝酸銀100重量份,則通常含有聚乙烯吡咯烷酮5重量份Examples of the dispersant used in the present invention include polyethylene (MP), gelatin, polyethylene glycol, and polyvinyl alcohol. In addition, in the present invention, a gelatin system is used by including epiphysis µ. Among the dispersants used in the present invention, ethyrenone and gelatin are particularly preferred because they can improve the heat shrinkage resistance of silver powder. In the present invention, by dispersing the dispersant in the i-th aqueous solution ', the dispersibility of the silver powder can be improved, and at the same time, the silver powder-based fine particles have the effect of making the particle size distribution not too narrow and relatively relaxed. The nitric acid used in the present invention is not particularly limited, and either concentrated nitric acid or dilute nitric acid can be used. In the towel of the present invention, since nitric acid is blended in the first aqueous solution, the reaction rate for generating silver from silver ions can be controlled to be relatively slow. Therefore, the particle size distribution of the silver powder is not too narrow and is slower than that of the car. And increase the role of microcrystals. In addition, if silver powder is produced without the preparation of nitric acid, the reaction rate of producing silver from silver ions is too fast and the reaction occurs immediately. Therefore, the obtained silver powder is more likely to become granules than the case where nitric acid is prepared by the preparation of the present invention. The diameter is smaller and the crystallite diameter is smaller. When the first aqueous solution is a polyvinylpyrrolidone as a dispersant, it usually contains 5 parts by weight of polyvinylpyrrolidone relative to 100 parts by weight of silver nitrate.

2213-6834-PF 14 •200536636 〜60重量份、而15重量份〜5〇重量 重量份更佳。聚乙稀吼爾 在二重量份’ 由於銀粉的分散性有所改善 ::在该爾’則 為不致太窄崎而比較寬缓,故較粒度分布容易成 咯院酮的調配量若小於5重 彳面’聚乙稀吼 易凝聚’故不佳;若超過60重量份=所得到的銀粉容 中的不純物濃度容易偏高、容丄:;於:得到的銀粉 偏高,故不佳。 易5木兄、生產成本容易 "二Γ:=分散劑為明膠時,相物^ ?二番 膠°.5重量份,重量份、而1重 罝伤〜8重Ϊ份較佳、2重量旦 1重 量若在竽笳π 里份更佳。明膠的調配 摩巳圍内,則由於银粉的分散性有所改善,同日士衡 :的=分布容易成為不致太窄崎而比較寬緩:: 另一方面,明膠的調配量若小 到的銀粉容易凝聚,故不佳,·若超過 不純物濃度容易偏高、容二== 產成本谷易偏高,故不佳。 兄生 一尺/合液係刀放劑為聚乙烯咄咯烷g同時,相 水⑽重量份,則通常含有明踢】重量份〜ι〇重量份、而^ 重量份〜4重量份較佳。聚乙婦吼_的調配 2 圍内,則由於銀粉的分散性有所改善,同時銀 :耗 布容易成為不致太窄嘴而比較寬缓,故較佳。另^二又分 聚乙烯咄咯烷酮的調配量若小於1重量份,則由於所:, 的銀粉容易凝聚,故不佳;若超過10重量份,則由於::2213-6834-PF 14 • 200536636 to 60 parts by weight, and 15 to 50 parts by weight are more preferred. Polyethylene glycol is two parts by weight 'due to the improved dispersion of silver powder: in the Seoul', it is not too narrow and is relatively wide, so it is easier to make the particle size distribution into the amount of ketoketone if it is less than 5 The weight of noodles is not good because it is easy to agglomerate; if it exceeds 60 parts by weight = the concentration of impurities in the obtained silver powder content is likely to be high, and the content is too high; Easy 5 wooden brother, easy production cost " two Γ: = when the dispersant is gelatin, the phase material ^? Two gelatin °. 5 parts by weight, parts by weight and 1 ~ 8 parts by weight is better, 2 The weight is better if the weight is within 竽 笳 π. Within the blending of gelatin, the dispersion of the silver powder is improved, and the distribution of the same powder is easy to become too narrow and not too narrow: On the other hand, if the blending amount of gelatin is small It is easy to agglomerate, so it is not good. If it exceeds the concentration of impurities, it is easy to be high. Rongji == The production cost valley is easy to be high, so it is not good. The brother-in-law / healing liquid knife release agent is polyethylene gallidine g. At the same time, the weight of the phase water is usually about 1 part by weight, and ^ parts by weight is better than 4 parts by weight. . Within the range of the blending of Poly-E-Women, it is better because the dispersibility of silver powder is improved, and the silver consumption is easy to become not too narrow and wide, so it is better. In addition, if the blending amount of polyvinylpyrrolidone is less than 1 part by weight, it is not good because the silver powder is easy to agglomerate; if it exceeds 10 parts by weight, then:

2213-6834-PF 15 .200536636 到的銀粉中的不純物濃度容易 ,〇 成本容易偏高,故不佳。 =^ h ^竟、生產 第1水溶液係,分散劑為明 份,則通常含有明膠〇」重 二"於7"°〇重量 ~2 R ^ 知〜5重量份、而〇·4重量份 2重里知較佳。明膠的調配 的分散性有所改善,同時銀於圍内’則由於銀粉 -,,^的粒度分布容易成為不致太 ^ η 1 . 0 v 另—方面,明膠的調配量若小 若赶=則由於所得到的銀粉容易凝聚,故不佳; =4量份’則由㈣得到的銀粉中的不純物濃度容 易偏…易污染環境、生產成本容易偏高,故不佳。 弟i水溶液係’相對於確酸銀ι〇〇重量份,則通常含 有硝酸3 5重量份〜7 〇會旦乂八 ^ 伤70重里份、而40重量份〜60重量份較 佳、48重量份〜54會景/八话,土 , 里切孕乂 77更^ 。硝酸的調配量若在該範圍 ’則由於銀粉的粒度分布成為不致太窄崎而比較寬緩、 且❹晶增大的效果較大’故較佳。另一方面,石肖酸的調 配量若小於35重量份,則由於銀粉的結晶性容易偏低,故 不佳,若超過70重量份,則由於所得到的銀粉容易凝聚, 故:佳。再者’於本發明中,所謂硝酸的調配量係指換算 為;辰度61 %的濃硝’酸之調配量。 、於本發明中所謂第2水溶液係指含有抗壞血酸的水溶 液。作為調製第2水溶液所使用的水係純水、離子交換水、 超純水等,由於防止不純物混入銀粉中,故較佳。作為本 發明所使用的抗壞血酸可使用左旋體、右旋體的任一種。 有關本發明的製造方法,混合上述第丨水溶液與第22213-6834-PF 15 .200536636 The impurity concentration in the silver powder is easy, and the cost is easy to be high, so it is not good. = ^ h ^ In fact, the production of the first aqueous solution system, the dispersant is bright parts, usually contains gelatin 〇 ″ by weight " at 7 " ° 〇wt ~ 2 R ^ Know ~ 5 parts by weight, and 0.4 parts by weight Two-layer knowledge is better. The dispersion of gelatin is improved, and at the same time, the size of the silver powder is not likely to be too small due to the particle size distribution of silver powder, ^ η 1. 0 v On the other hand, if the amount of gelatin is small, then Because the obtained silver powder is easy to agglomerate, it is not good; = 4 parts by weight, the concentration of impurities in the silver powder obtained from osmium tends to be biased ... It is easy to pollute the environment and the production cost is easily high, so it is not good. The aqueous solution is based on 500,000 parts by weight of silver acid, and usually contains 35 parts by weight of nitric acid to 70 parts by weight. 70 parts by weight, preferably 40 parts by weight to 60 parts by weight, 48 parts by weight Serving ~ 54 Huijing / Eight words, soil, Ricci pregnancy 77 more ^. If the amount of the nitric acid to be blended is within this range, it is preferable because the particle size distribution of the silver powder is not too narrow and is relatively wide, and the effect of increasing the crystallites is large. On the other hand, if the blending amount of lithocholic acid is less than 35 parts by weight, the crystallinity of the silver powder tends to be low, which is not good. If it exceeds 70 parts by weight, the obtained silver powder is likely to aggregate, so it is good. In addition, in the present invention, the amount of nitric acid to be mixed refers to the amount of concentrated nitric acid which is 61%. In the present invention, the second aqueous solution refers to an aqueous solution containing ascorbic acid. Water-based pure water, ion-exchanged water, ultrapure water, and the like used for preparing the second aqueous solution are preferable because impurities are prevented from being mixed into the silver powder. As the ascorbic acid used in the present invention, either of L-isomer and D-isomer can be used. In the manufacturing method of the present invention, the second aqueous solution and the second aqueous solution are mixed

2213-6834-PF 16 •200536636 b液在混合液中使高結晶性銀粉析 可舉出例如:攪拌妥第丨水溶液再將乍:二:-’ 第1水溶液的方法。在這種情況下作為第2=Γ 方法,可將全部的帛2水 力、、 /合液的添加 1开添加於第1 士、、六、六 可將第2水溶液每次以少量緩緩添加於第i水容、二,亦 第1水溶液中的分散劑為聚 〜之再者 部的篦? f、六 坪各说綱時,若採用將全 #二 一併添加於第1水溶液的方法,則由於容 故較佳·當"⑼不致太乍Λ“比較寬緩的銀粉, 水=二:中的分散劑為明膠時,若採用將第2 容易_制:^里緩緩添加於第1水溶液的方法,則由於 合易控制銀粉的粒徑,故較佳。 於混合第1水溶液與第2水溶 1 κ ^ ^ 4又你相對於調配於第 1水洛液的硝酸銀100重量份, 浐揀A _、s A j捫配於弟2水溶液中的 抗壞血fcc通常以30重量份〜9〇 詈^八击工社cn 里如而40重量份〜8〇重 “ 重量份〜75重量份為更佳的比率加以混合。 相對於硝酸銀之抗壞血酸的調配 銀粉的收率容易增多,故較佳。另=:,則由於 1 nn舌旦八 方面’相對於硝酸銀 還原不里Λ 血酸的調配量若小於3G重量份,則由於 100、重-二粉的收率容易偏低,故不佳;相對於石肖酸銀 —里刀之抗壤血酸的調配量若超過90重量份,則由於 容易污染環境、生產成本容易偏高,故不佳。 '曰人於混合第1水溶液與第2水溶液係,所得到的 “液中的銀離子濃度通常、而3〇g/1〜65 W車父佳的比率加以混合。混合液中的銀離子滚度若在該2213-6834-PF 16 • 200536636 Liquid B is used to analyze the highly crystalline silver powder in the mixed solution. For example, the method of stirring the first aqueous solution and then changing the first:-'first aqueous solution can be mentioned. In this case, as the 2 = Γ method, you can add all of the 力 2 hydraulic, /, and liquid mixtures to the 1st, 1st, 6th, and 6th. The second aqueous solution can be slowly added in small amounts at a time. The dispersant in the i-th water volume, the second, and the first aqueous solution is poly ~, and then the hydrazone? f. When Liuping talks about the outline, if the method of adding the whole # 22 to the first aqueous solution is used, it is better because of the reason. When "Don't cause Taicha Λ" relatively loose silver powder, water = two When the dispersant in: is gelatin, if the method of slowly adding the second easy-to-make: ^ li to the first aqueous solution is adopted, it is preferable to control the particle size of the silver powder, so it is better to mix the first aqueous solution with The second water-soluble 1 κ ^ ^ 4 and you are 100 parts by weight of silver nitrate prepared in the first water solution, 浐 A 、, s A j 扪 The ascorbic acid fcc is usually 30 parts by weight in the brother 2 aqueous solution. ~ 9〇 詈 ^ Bahit Kogami cn Ruri 40 parts by weight ~ 80 parts by weight "~ 75 parts by weight are mixed at a better ratio. Blended with ascorbic acid relative to silver nitrate The yield of silver powder tends to increase, so it is preferred. Another = :, because 1 nn Tongdan Bafang 'relative to silver nitrate reduction Λ blood acid preparation amount is less than 3G parts by weight, because the yield of 100, heavy-second powder is easy to be low, so it is not good; If the amount of ascorbic acid is more than 90 parts by weight relative to the silver oxalate and razor blade, it is not good because it is easy to pollute the environment and the production cost is easily high. "I said that when the first aqueous solution and the second aqueous solution were mixed, the" concentration of silver ions in the solution is usually, and the ratio of 30 g / 1 to 65 W is better. The silver ions in the mixed solution are rolled. If the degree

2213-6834-PF 17 200536636 範圍内,則由於銀粉的收率較高 聚,故較佳。另-方面,銀離子濃到的*粉難以凝 /辰度右小於1() 於銀粉的生產性容易變差,故不佳;銀 、 g/卜則由於所得到的銀粉容易凝聚 *又右超過80 κ 敌不佳。 第2 χ、心:弟1水*液與弟2水溶液係,相對於調配於 弟2水洛液的抗壞血酸1 〇 〇重量 丨刀貝“周配於第1火、玄、、态 中的石肖酸通常以40重量份~150重量份 重量份較佳、65重量份〜1〇〇重量份 里伤 合。相對於抗壞血酸之核的調配量比率加以混 於銀粉的收率容易增多,故較佳。另~耗圍内’則由 血酸100重量份之石肖酸的調配量若小:4〇面旦相對於抗壞 難以使所得到的銀粉之微晶徑變里知’則由於 一。。重量份之侧調配量:超=重T 則由於所得到的銀粉容易凝聚,故不佳。 里知, 基於混合第1水溶液與第2 的銀粉係在第1水溶液與第2水溶:::=合液中析出 由對混合液繼續混合通常是3分鐘以::最:二,若再藉 分鐘使混合液中的鈀扒士、反 取好疋5分鐘〜10 分散性由於容易成二…則銀粉的粒徑及粒度分布與 故較佳。在混= 的銀粉的特定範圍内者’ 义τ所传到的銀粉係 等的過濾裝置來加以過據之純:努採漏斗 燥,則可得到有關本發明的高結晶性屯=洗心’施予乾 上述有關本發明的高結晶性銀粉可 晶片元件、電漿顯示板用作可形成例如 玻离陶竟紅件、陶莞遽波器等的2213-6834-PF 17 200536636, it is better because the yield of silver powder is higher. On the other hand, the silver powder with strong silver ions is difficult to coagulate / Chen degree is less than 1 (). The productivity of silver powder is easily deteriorated, so it is not good; silver and g / bu are easily aggregated due to the obtained silver powder. More than 80 κ is bad for the enemy. The second χ, heart: Brother 1 water * solution and Brother 2 aqueous solution, relative to the ascorbic acid 1000 weight formulated in Brother 2 Shui Luo solution 丨 Swordfish "Zhou Bei" in the first fire, mysterious, and state of stone The oxalic acid is usually 40 to 150 parts by weight, preferably 65 to 100 parts by weight. The ratio of the blending ratio of the ascorbic acid nucleus to the silver powder is likely to increase, so it is more effective. In addition, within the range of consumption, if the blending amount of shithoic acid is 100 parts by weight of blood acid, if it is small: 40% of denier is difficult to change the crystallite diameter of the obtained silver powder. The side blending amount of parts by weight: over = weight T, because the obtained silver powder is easy to agglomerate, it is not good. It is known that based on mixing the first aqueous solution and the second silver powder, the first aqueous solution and the second aqueous solution are soluble :: : = Precipitation in the mixture is usually continued for 3 minutes by mixing the mixed solution. It is :: most: 2. If you borrow another minute to make the palladium steak in the mixed solution, take it back for 5 minutes ~ 10 The dispersibility is easy to be two … Then the particle size and particle size distribution of silver powder are better. Within the specific range of mixed silver powder, the meaning of τ Filtering devices such as silver powder are pure: if you use a funnel to dry, you can get the high crystallinity of the present invention = washing the heart. You can dry the high crystallinity silver powder chip element and plasma display panel of the present invention. It can be used to form,

2213-6834-PF 18 200536636 笔極或電路之導電性膏劑 ^的原科’特別是利用銀粉的熱收 縮率非常小,不僅是能豹、s 、 夠適用作一般的陶瓷基板以作為形 成電路的基板、而且是能韵接 b约適用作LTCC基板用的導電性膏 劑的原料。並且,有關太# 一 啕關本表明的南結晶性銀粉之製造方法 能夠使用於有關本發明的古处 w十知β的同結晶性銀粉之製造。 以下雖係以實施例爽矣 ,,^ ' 例木表不,但本發明並不限於這些實 施例所作的解釋。 一、 【實施例1】 於常温的純水5〇〇g中置入PVP(K值:30) 10g、硝酸 銀50g及辰墙酉夂(濃度61%) % 6忌,加以擾掉使溶解以 調製第!水溶液(第!水溶液A)。另一方面,於常溫的純 水_g中置人抗壞血酸35 8g’加以攪拌使溶解以調製第 2水洛液(第2水溶液A)。帛丨水溶液與第2水溶液的組 成如第1表及第2表所示。 /、人在攪拌第1水溶液A的狀態下,將第2水溶液 A -併添加至該第}水溶液A中’自添加完成後再攪拌5 分鐘使混合液中的粒子成長。其後停止攪拌,使混合液中 的粒子沈降後去棄混合液的上層澄清液,利用努採漏斗來 過濾混合液,以純水清洗濾渣,施予乾燥,而得到高結晶 性銀粉。 對於所得到的銀粉利用下述方法來測定Diq、Ip D”、 Dm、SD、微晶徑、比表面積、輕敲密度、熱收縮率以及電 阻率,算出L^/Dh。結果如第3表〜第6表所示。 (D!〇、D5。、D9〇、Dioo、SD ) ··使用日機裝股份公司製2213-6834-PF 18 200536636 The original family of conductive pastes for pens or circuits ^ Especially the thermal shrinkage of silver powder is very small, not only can it be used as a general ceramic substrate for circuit formation The substrate is a raw material that can be used as a conductive paste for LTCC substrates. In addition, the manufacturing method of the south crystalline silver powder indicated by Tai # 一 啕 Sekimoto can be used for the production of the same crystalline silver powder of the ancient part of the present invention. Although the following is a description of the examples, the present invention is not limited to the explanations of these examples. I. [Example 1] Put 500 g of PVP (K value: 30), 50 g of silver nitrate, and cinnabarium (concentration 61%)% 6 in 500 g of pure water at room temperature. Modulation Cap! Aqueous solution (Cap! Aqueous solution A). On the other hand, 35.8 g 'of human ascorbic acid was placed in pure water_g at room temperature, and stirred to dissolve to prepare a second water solution (second aqueous solution A). The composition of the aqueous solution and the second aqueous solution is shown in Tables 1 and 2. /. While the first aqueous solution A is being stirred, a second aqueous solution A- is added to the second aqueous solution A ', and the mixture is stirred for 5 minutes after the addition is completed to grow the particles in the mixed solution. Thereafter, the stirring was stopped, the particles in the mixed solution were allowed to settle, and the upper clear solution of the mixed solution was discarded. The mixed solution was filtered using a Knoop funnel, the filter residue was washed with pure water, and dried to obtain highly crystalline silver powder. About the obtained silver powder, Diq, Ip D ", Dm, SD, crystallite diameter, specific surface area, tap density, thermal shrinkage, and resistivity were measured by the following methods, and L ^ / Dh was calculated. The results are shown in Table 3 ~ As shown in Table 6. (D! 〇, D5., D9〇, Dioo, SD) ·· Used by Nikkiso Co., Ltd.

2213-6834-PF 19 .200536636 MICROTRAC-HRA以激光繞射散射法所求得的累積分布在 10%、50%、90%及1()0%的時點之粒徑,將這些粒徑各別設 為 D!。( # m ) D5() ( # m )、j)9。( # m D⑴(# 爪),將所得 到的粒度分布的標準偏差設為SD。 (微晶徑):利用Rigaku股份公司製χ射線繞射裝置 RINT2 0 0 0PC來進行粉末χ射線繞射的分析,由所得到的各 晶面之繞射角的尖峰之半值寬度以求得微晶徑。 (比表面積)··利用YUASA I〇nics股份公司製Μ⑽◦如汁 _來測定BET比表面積,而使用& βΕΤ比表面積。 (fe敲密度)··利用藏持科學機械製造廠製輕敲機藉由 對試樣輕敲來測定輕敲密度。 (熱收縮率):壓固銀粉以製作圓柱形的丸粒,利用2213-6834-PF 19 .200536636 MICROTRAC-HRA The particle diameters at the time points of 10%, 50%, 90%, and 1 (0%) of the cumulative distribution obtained by the laser diffraction scattering method. Set to D !. (# M) D5 () (# m), j) 9. (# M D⑴ (# 爪), and the standard deviation of the obtained particle size distribution is SD. (Crystalline diameter): The powder X-ray diffraction was performed by using a X-ray diffraction device RINT2 0 0 0PC manufactured by Rigaku Corporation. Analyze and obtain the crystallite diameter from the half width of the peaks of the diffraction angles of the crystal planes obtained. (Specific surface area) · The BET specific surface area is measured by using ASA⑽, manufactured by YUASA Ionics Corporation. &Amp; βΕΤ specific surface area. (Fe tap density) · The tap density was measured by tapping the sample with a tapping machine made by Zangji Scientific Machinery Co., Ltd. (Heat shrinkage rate): Pressing the silver powder to Making cylindrical pellets, using

Seiko Instruments Inc.股份公司製 TMA/SS6300,對於該 丸粒’在空氣中,以昇溫速度1(rc /dn由常溫至85(rc為 止的範圍來進行TMA分析,測定丸粒的長度方向的熱收縮 _率°測定溫度設為3〇(rc、50(rc及7〇(rc。 (電阻率):將蔥品醇95重量份與乙基纖維素5重量 、此曰以5周製混合溶劑’將該混合溶劑1 5重量份與粉 體忒樣8 5重量份加以混合來製作膏劑,將該膏劑在3 〇 〇。匸 少口燒以製作具有數# m左右厚度的銀塗膜。並且,除了取 代300 C的培燒溫度而設為400T:及500T:之外,與上述同 樣地施行以製作銀塗膜。 其次’利用(Hewlett — Packard股份公司製MILL10ΗΜ METER ) ’以四端網絡法來測定上述銀塗膜的電阻(Ω )之TMA / SS6300 manufactured by Seiko Instruments Inc. was subjected to TMA analysis in the air at a temperature rise rate of 1 (rc / dn from normal temperature to 85 (rc), and the heat in the longitudinal direction of the pellet was measured. Shrinkage rate measurement temperature is set to 30 (rc, 50 (rc, and 70 (rc.)) (Resistivity): 95 parts by weight of onionol and 5 weight of ethyl cellulose, which is a mixed solvent made in 5 weeks. '15 parts by weight of this mixed solvent is mixed with 85 parts by weight of powder sample to prepare a paste, and the paste is fired at 300 ° C to produce a silver coating film having a thickness of about several meters. A silver coating film was produced in the same manner as above except that the firing temperature was set at 300 C to 400 T: and 500 T :. Next, 'Using (Hewlett — Packard Co., Ltd. MILL10ΗM METER)' was obtained by a four-terminal network method. Measure the resistance (Ω) of the silver coating film

2213-6834-PF 20 200536636 後,(Ω 由銀塗膜的截面積與端子之間 的長度以求得電阻率 Ρ L貫抛例2 j 於常溫的純水5〇〇g中詈人pvp r g Y置入PVP (K值:30 ) 20g、硝酸 銀5 0g及濃硝酸(濃度%) 度bU) 24.6 §,加以攪拌使溶解以 调製第1水溶液(第1水溶) 從β )另一方面,於常溫的純 水500g中置入抗壞血酸, 、 · · 8g,加以攪拌使溶解以調製第 2水溶液(第2水溶液a )。第1皮、、办、六2213-6834-PF 20 200536636, (Ω is calculated from the cross-sectional area of the silver coating film and the length of the terminal to obtain the resistivity ρ L. Example 2 j Pvp rg in 500 g of pure water at room temperature Y put 20 g of PVP (K value: 30), 50 g of silver nitrate, and concentrated nitric acid (concentration%) degree bU) 24.6 §, and stir to dissolve to prepare a first aqueous solution (first water-soluble) from β) On the other hand, Ascorbic acid (8 g) was placed in 500 g of pure water at room temperature, and the mixture was stirred and dissolved to prepare a second aqueous solution (second aqueous solution a). 1st, 2nd, 6th

;弟1水洛液與第2水溶液的組 成如第1表及第2表所示。 其次,在攪拌第1水溶液B的肋於 、,、 布&今履β的狀恕下,將第2水溶液 Α 併添加至該第1 、、交、、右p 、 尺/合液B中,自添加完成後再攪拌5 、’使匕口液中的粒子成長。其後停止授掉,使混合液中 的津子沈降後丢棄混合液的上層澄清液,#用努採漏斗來 過遽混合液,以純水清洗濾渣,施予乾燥,而得到高結晶 性銀粉。 對於所得到的銀粉與實施例1同樣地實施,利用上述 方法來測t Dh、d5〇、D9。、D〗。。、SD、微晶徑、比表面積、 輕敲密度、熱收縮率以及電阻率,算A D9〇/D〗◦。結果如第 3表〜第6表所示。 【比較例1】 於常溫的純水50 0g中置入PVP (K值:30) 10g及硝 酸銀5〇g ’加以攪拌使溶解以調製第1水溶液(第1水溶 液C)。另一方面,於常溫的純水5〇〇g中置入抗壞血酸26g, 加以搜掉使溶解以調製第2水溶液(第2水溶液B)。第1The composition of the 1st water solution and the second aqueous solution is shown in Tables 1 and 2. Next, while stirring the ribs of the first aqueous solution B, the second aqueous solution A is added to the first, second, right, and right sides of the first aqueous solution B. After the addition is complete, stir again 5 'to make the particles in the dagger liquid grow. After that, stop teaching, settle the jinzi in the mixed solution, and discard the upper clear solution of the mixed solution. # Use a nutrient funnel to purge the mixed solution, wash the filter residue with pure water, and dry it to obtain high crystallinity. Silver powder. The obtained silver powder was implemented in the same manner as in Example 1, and t Dh, d50, and D9 were measured by the above method. , D〗. . , SD, crystallite diameter, specific surface area, tap density, thermal shrinkage, and resistivity are calculated as A D9〇 / D. The results are shown in Tables 3 to 6. [Comparative Example 1] 10 g of PVP (K value: 30) and 50 g of silver nitrate were placed in 50 g of pure water at room temperature and stirred to dissolve to prepare a first aqueous solution (first aqueous solution C). On the other hand, 26 g of ascorbic acid was placed in 500 g of pure water at room temperature, and it was searched and dissolved to prepare a second aqueous solution (second aqueous solution B). 1st

2213-6834-PF 21 2005366362213-6834-PF 21 200536636

水溶液與第2水溶液的組成如第j表及第2表所示Q 其-人,在授拌第1水溶液c的狀態下,將第2水溶液 β—併添加至該第1水溶液C中,自添加完成後再攪拌5 分鐘使混合液中的粒子成長。其後停止授拌,使混合液令 的粒子沈降後丢棄混合液的上層澄清液,利用努採漏斗來 過濾混合液,以純水清洗遽逢,施予乾燥,而得到銀粉。 對於所得到的銀粉與實施例i同樣地實施,利用 方法來測定^、^、‘。、^、微晶徑〜比表面積、 輕敲密度、熱收縮率以及電阻率,算出w“。結果如第 3表〜第6表所示。 【實施例3】 於常溫的純水250g中置入明膠(新田gelatin股份公 司製)i.〇g、硝酸銀50§及濃頌酸(濃度6i%) 26 4g,藉 由加熱至5G°C並加以攪拌使溶解以調製第1水溶液(第曰j ^令液D)另-方面,於常溫的純水25〇g中置入抗壞血 酸26. 4=,加以授拌使溶解以調製第2水溶液(第2水溶 液Ο第1水溶液與第2水溶液的組成如第工表及第2表 所示。 —其次、’在5〇°C授掉第1水溶液D的狀態下,將常溫的 弟2水’合液c經30分鐘緩緩添加至該第】水溶液d中,自 添加完成後再授拌5分鐘使混合液中的粒子成長。其後停 止授拌’使混合液中的粒子沈降後丢棄混合液的上層澄清 ^利用努採漏斗來過遽混合液,以純水清洗滤潰,施予The compositions of the aqueous solution and the second aqueous solution are as shown in Tables j and 2. Q The human being, while stirring the first aqueous solution c, added the second aqueous solution β- to the first aqueous solution C, and After the addition is complete, stir for 5 minutes to grow the particles in the mixture. After that, the mixing was stopped, the particles of the mixed solution were allowed to settle, and the upper clear solution of the mixed solution was discarded. The mixed solution was filtered using a Knoop funnel, washed with pure water, and dried to obtain silver powder. The obtained silver powder was implemented in the same manner as in Example i, and ^, ^, and 'were measured by a method. , ^, Crystallite diameter ~ specific surface area, tap density, thermal shrinkage and electrical resistivity, calculate w ". The results are shown in Tables 3 to 6. [Example 3] 250 g of pure water at room temperature Into gelatin (made by Nitta Gelatin Co., Ltd.) i.〇g, silver nitrate 50§ and concentrated hyaluronic acid (concentration 6i%) 26 4g, the first aqueous solution (the first j ^ 令 液 D) On the other hand, ascorbic acid 26. 4 = was placed in 25 g of pure water at room temperature, and stirred to dissolve to prepare a second aqueous solution (the second aqueous solution, the first aqueous solution and the second aqueous solution. The composition is shown in Tables 2 and 2. —Secondly, under the condition that the first aqueous solution D is taught at 50 ° C, the younger 2 water mixture c at room temperature is slowly added to the first 30 minutes. ] In the aqueous solution d, the mixture was allowed to grow for 5 minutes after the addition was completed to grow the particles in the mixed solution. After that, the mixing was stopped. The particles in the mixed solution were allowed to settle and the upper layer of the mixed solution was discarded.遽 Mix the liquid, rinse with pure water and apply

乾燥,而得到高結晶性銀粉。 2213-6834-PF 22 200536636 對於所得到的銀粉與實施例1同樣地實施,利用上述 方去來測t Di〇、D5d、d9。、Di。。、SD、微晶徑、比表面積、 輕敲密度、熱收縮率以及電阻率,算出D9〇/D1G。結果如第 3表〜第6表所示。 【實施例4】 於常溫的純水50〇g中置入明膠(新田GELATIN股份公 司製)3· 〇g、硝酸銀5〇g及濃硝酸(濃度61%) 24_ 6g,藉 由加熱至5G°C並加以擾拌使溶解以調製第i水溶液(第】 水’合液E)。另一方面,於常溫的純水500g中置入抗壞血 酉文25· 9g,加以攪拌使溶解以調製第2水溶液(第2水溶 、)第1水,谷液與第2水溶液的組成如第1表及第2表 所示。 ^ /、人’在50 C攪拌第1水溶液E的狀態下,將常溫的Dry to obtain highly crystalline silver powder. 2213-6834-PF 22 200536636 The obtained silver powder was implemented in the same manner as in Example 1, and t Di0, D5d, and d9 were measured using the above method. , Di. . , SD, crystallite size, specific surface area, tap density, thermal shrinkage, and resistivity, and D90 / D1G was calculated. The results are shown in Tables 3 to 6. [Example 4] Gelatin (made by Nitta GELATIN Co., Ltd.) 3.0 g, silver nitrate 50 g, and concentrated nitric acid (concentration 61%) 24-6 g were placed in 50 g of pure water at room temperature, and heated to 5G. The mixture was stirred at ° C and dissolved to prepare an i-th aqueous solution (the "water" hydration solution E). On the other hand, 25 · 9 g of ascorbic acid script was placed in 500 g of pure water at room temperature, and the mixture was stirred to dissolve to prepare a second aqueous solution (a second aqueous solution, a first aqueous solution), and a composition of the valley liquid and the second aqueous solution was as follows: Tables 1 and 2 show. ^ / 、 People ’at a state of stirring the first aqueous solution E at 50 C,

=2水溶液D經30分鐘緩緩添加至該第1水溶液E中,自 ^凡成後再攪拌5分鐘使混合液中的粒子成長。其後停 止攪拌,使混合液中的粒子沈降後丟棄混合液的上層澄清 ,夜利用努採漏斗來過濾混合液,以純水清洗濾渣,施予 乾燥,而得到高結晶性銀粉。 、;所得到的銀粉與實施例1同樣地實施,利用上述 一來阅定Dl°、D5G、D9i)、Dl°°、SD、微晶徑、比表面積、 輕敲畨度、熱收縮率以及電阻率,算$ D9"Di。。結果如第 3表〜第6表所示。The aqueous solution D is slowly added to the first aqueous solution E over 30 minutes, and the mixture is stirred for 5 minutes to grow the particles in the mixed solution. After that, the stirring was stopped, the particles in the mixed solution were allowed to settle, and the upper layer of the mixed solution was discarded for clarification. The mixed solution was filtered using a Knoop funnel, the filter residue was washed with pure water, and dried to obtain highly crystalline silver powder. The obtained silver powder was implemented in the same manner as in Example 1. Using the above, Dl °, D5G, D9i), Dl °, SD, crystallite size, specific surface area, tapping degree, thermal shrinkage, and Resistivity, calculate $ D9 " Di. . The results are shown in Tables 3 to 6.

2213-6834-PF 23 2005366362213-6834-PF 23 200536636

【第1表】 水 (g) 分散劑 的種類 分散劑 (g) 硝酸銀 (g) 濃硝酸 (g) 第1水溶 液的種類 實施例1 500 PVP 10 50 24.6 A 實施例2 500 PVP 20 50 24.6 B 比較例1 500 PVP 10 50 0 C 實施例3 250 明膠 1.0 50 26.4 D 實施例4 500 明膠 3.0 50 24.6 E[Table 1] Type of water (g) Dispersant Dispersant (g) Silver nitrate (g) Concentrated nitric acid (g) Type of the first aqueous solution Example 1 500 PVP 10 50 24.6 A Example 2 500 PVP 20 50 24.6 B Comparative Example 1 500 PVP 10 50 0 C Example 3 250 Gelatin 1.0 50 26.4 D Example 4 500 Gelatin 3.0 50 24.6 E

【第2表】 水 (g) 抗壞血酸 (g) 第2水溶液的種類 實施例1 500 35.8 A 實施例2 500 35.8 A 比較例1 500 26.0 B 實施例3 250 26.4 C 實施例4 500 25.9 D 【第3表】 Dio (um) D50 (#m) D90 (Um) D100 (//m) D90/D10 SD 實施例1 2.97 6.35 10.75 22.0 3.6 3.01 實施例2 1.30 3.03 5.67 15.6 4.4 1.59 比較例1 2.14 2.83 4.08 9.3 1.9 0.71 實施例3 2.72 4.36 7.33 18.5 2.7 1.71 實施例4 0.76 1.27 2.28 4.6 3.0 0.57 【第4表】 微晶徑(A) 比表面積(m2/g) 輕敲密度(g/cm3) 實施例1 441 0.30 4.1 實施例2 377 0.62 4.0 比較例1 258 0.62 3.8 實施例3 545 0.20 4.4 實施例4 441 0.72 4.8 2213-6834- PF 24 200536636 【第5表】 於300°C的熱收縮率 (%) 於500°C的熱收縮率 (%) 於700°C的熱收縮率 (%) 實施例1 0.13 一 2,13 一 2.2 實施例2 0.09 一 2.68 一 2.9 比較例1 0.84 -4.02 -7.82 實施例3 0.27 1.08 1.13 實施例4 -0.58 ~~ 1.51 ~ 1.35 【第6表】 於300°C焙燒的銀塗膜 的電阻率ρ (Ω · m) 於400°C焙燒的銀塗膜 的電阻率ρ (Ω · m) 於500°C焙燒的銀塗膜 的電阻率ρ (Ω · m) 實施例1 4.1 ΧΙΟ'5 2.0 xlO·5 9.9 xlO·6 實施例2 5.2x10'5 1.5 χ ΙΟ'5 1.2 xlO'5 比較例1 7.2 xlO*4 8.9 χ1(Τ6 4.8 χΐσ5 實施例3 9.4 ΧΙΟ'6 8.3 xlO'6 9.9 xlO*6 貫施例4 1.0 xlO·5 8.8x10'6 4.8 xlO'5 由第1表〜第5表可判斷,使用分散劑及硝酸所製作的 銀粉係’微晶徑較大而具高結晶性,在7 〇 〇。〇的熱收縮率 較小。並且可判斷,使用明膠作為分散劑者,特別是在?〇〇 C的熱收縮率較小。又由第6表可判斷,使用分散劑及硝 酸所製作的銀粉比起不使用硝酸所製作的銀粉,在3〇〇t: 釔k的銀塗膜的電阻率p較低。此理由推測係基於微晶徑 車乂大致銀粉内的電子的移動變得較為順暢之故。 產業上可利用性: 有關本發明的高結晶性銀粉及高結晶性銀粉之製造方 =此夠用作可形成例如晶片元件、電漿顯示板、玻璃陶瓷 、、、件陶瓷濾波裔等的電極或電路之導電性膏劑的原料, 特別是能夠適用作LTCC基板用的導電性膏劑的原料。 2213-6^34-Pp 25 200536636 【圖式簡單說明】 無 【主要元件符號說明】 無[Table 2] Water (g) Ascorbic acid (g) Type of second aqueous solution Example 1 500 35.8 A Example 2 500 35.8 A Comparative Example 1 500 26.0 B Example 3 250 26.4 C Example 4 500 25.9 D [No. Table 3] Dio (um) D50 (#m) D90 (Um) D100 (// m) D90 / D10 SD Example 1 2.97 6.35 10.75 22.0 3.6 3.01 Example 2 1.30 3.03 5.67 15.6 4.4 1.59 Comparative Example 1 2.14 2.83 4.08 9.3 1.9 0.71 Example 3 2.72 4.36 7.33 18.5 2.7 1.71 Example 4 0.76 1.27 2.28 4.6 3.0 0.57 [Table 4] Crystallite diameter (A) Specific surface area (m2 / g) Tap density (g / cm3) Example 1 441 0.30 4.1 Example 2 377 0.62 4.0 Comparative Example 1 258 0.62 3.8 Example 3 545 0.20 4.4 Example 4 441 0.72 4.8 2213-6834- PF 24 200536636 [Table 5] Thermal shrinkage at 300 ° C (%) Thermal shrinkage (%) at 500 ° C Thermal shrinkage (%) at 700 ° C Example 1 0.13-2,13-2.2 Example 2 0.09-2.68-2.9 Comparative Example 1 0.84 -4.02 -7.82 Example 3 0.27 1.08 1.13 Example 4 -0.58 ~~ 1.51 ~ 1.35 [Table 6] Resistivity ρ of the silver coating film fired at 300 ° C ( M) Resistivity ρ (Ω · m) of the silver coating film baked at 400 ° C Resistivity ρ (Ω · m) of the silver coating film baked at 500 ° C Example 1 4.1 ΧΙΟ'5 2.0 xlO · 5 9.9 xlO · 6 Example 2 5.2x10'5 1.5 x χ 10'5 1.2 xlO'5 Comparative Example 1 7.2 xlO * 4 8.9 χ1 (Τ6 4.8 χΐσ5 Example 3 9.4 χIO'6 8.3 xlO'6 9.9 xlO * 6 Example 4 1.0 xlO · 5 8.8x10'6 4.8 xlO'5 It can be judged from Tables 1 to 5 that the silver powder based on the use of a dispersant and nitric acid has a large crystallite size and high crystallinity. 〇. The thermal contraction rate of 〇 is small. And it can be judged that those who use gelatin as a dispersant, especially in? The thermal shrinkage of 〇 C is small. From Table 6, it can be determined that the resistivity p of the silver coating film at 300 t: yttrium k is lower than that of the silver powder prepared without using nitric acid, compared to the silver powder prepared without using nitric acid. This reason is presumed to be based on the fact that the movement of electrons in the roughly silver powder of the micro-diameter wheel is relatively smooth. Industrial applicability: The manufacturing method of the highly crystalline silver powder and the highly crystalline silver powder according to the present invention is sufficient for forming electrodes such as wafer elements, plasma display panels, glass ceramics, and ceramic filter It can be used as a raw material for conductive pastes for circuits or circuits, and is particularly suitable as a raw material for conductive pastes for LTCC substrates. 2213-6 ^ 34-Pp 25 200536636 [Simplified illustration of the diagram] None [Description of the main component symbols] None

2213-6834-PF2213-6834-PF

Claims (1)

* 200536636 十、申請專利範圍: 1 · 一種高結晶性銀粉之製 含有硝酸銀、分散劑以及硝酸 血酸之第2水溶液加以混合。 造方法,其特徵在於:對於 之第1水溶液、與含有抗壞 2.如申請專利範圍第1頊 負所返的高結晶性銀粉之製造 方法’其中前述分散劑係聚乙烯吡咯烷酮。 、3·如1專利範圍第1項所述的高結晶性銀粉之製造 方法’其中前述分散劑係明膠。* 200536636 10. Scope of patent application: 1 · Made of a highly crystalline silver powder A second aqueous solution containing silver nitrate, a dispersant and blood nitrate is mixed. The manufacturing method is characterized in that: the first aqueous solution and the anticorrosive method are included. 2. The manufacturing method of the highly crystalline silver powder as described in the first patent application claim is negative, wherein the dispersant is polyvinylpyrrolidone. 3. The method for producing a highly crystalline silver powder according to item 1 of the scope of patent 1, wherein the dispersant is gelatin. 4·如申睛專利範圍第2項新、+ 固乐z項所述的高結晶性銀粉之製造 方法’其中如述第1水、、交、、在也 , 液係’相對於硝酸銀1 0 0重量份, 則調配聚乙烯吡咯烷酮5重景 j ϋ室里份〜60重量份、硝酸35重晋 份〜70重量份。 里 /•如中請專利範圍第3項所述的高結晶性銀粉之製造 方法/、中剛述第1水溶液係,相對於確酸銀刚重量份, 則调配明膝0 · 5重量份〜1 n f β八 旦 里切10重ϊ份、硝酸35重量份〜70重 量份。 6.如申請專利範圍第1項所述的高結晶性銀粉之製造 方法丄其中對於前述第1水溶液與前述第2水溶液係由相 :於引述帛1水溶液中所調配的硝酸銀^ 〇。重量份,則以 第2尺/合液中所調配的抗壞血酸30重量份〜90重量份所艰 成的比率加以混合。 所形 、、7·如申請專利範圍帛i項所述的高結晶性銀粉之製造 方法其中對於前述第1水溶液與前述第2水溶液係 對於前述第2太、、六、六士 Φ相 水/合液中所調配的抗壞血酸1 0 0重量份,則 2213-6834-PF 27 •200536636 1 5 0重量份所形 利用如申請專利 以第1水溶液中所調配的硝酸40重量份 成的比率加以混合。 8 · —種咼結晶性銀粉,其特徵在於: I巳圍第1項所述的方法加以製造。 9·如申請專利範圍第8項 微晶徑係3 0 0 A以上。 所述的高結晶性銀粉 其中4. The method of manufacturing highly crystalline silver powder as described in item 2 of the new patent application and + Gule z, where the first water, liquid, and liquid are used, as compared with silver nitrate, 1 0 0 parts by weight, then polyvinylpyrrolidone is prepared in 5 parts by weight, 60 parts by weight in the chamber, 35 parts by weight of nitric acid, and 70 parts by weight. // As described in the patent claim No. 3 of the patent scope for the production method of high crystallinity silver powder /, the first aqueous solution described in Zhonggang, with respect to the weight of authentic acid silver, it is blended with 0. 5 parts by weight of knees ~ 1 nf β eight denier cut 10 parts by weight, 35 parts by weight of nitric acid ~ 70 parts by weight. 6. The method for manufacturing a highly crystalline silver powder according to item 1 of the scope of the patent application: wherein the first aqueous solution and the second aqueous solution are composed of silver nitrate prepared in the aqueous solution of the reference 引 1. Parts by weight are mixed at a ratio of 30 parts by weight to 90 parts by weight of ascorbic acid prepared in the second ruler / mixture. The method of manufacturing the highly crystalline silver powder as described in item (i) of the scope of the patent application, wherein the first aqueous solution and the second aqueous solution are the second aqueous solution of the first, second, sixth, and sixth phases. 1003 parts by weight of ascorbic acid formulated in the mixture, 2213 -6834-PF 27 • 200536636 1 50 parts by weight are mixed with a proportion of 40 parts by weight of nitric acid formulated in the first aqueous solution as applied for a patent. . 8-A kind of crystalline silver powder, characterized in that: I 制造 is produced by the method described in item 1. 9. If the scope of patent application is No. 8, the crystallite diameter is more than 300 A. The highly crystalline silver powder wherein 、10.如中請專利範圍f 8項所述的高結晶性銀粉,其中 平均粒徑心為。(而^係表示基於激光繞 射散射式粒度分布敎法的累積分布50容量%之中值粒徑 (# m)) η·如申請專利範圍第8項所述的高結晶性銀粉,其中 於7〇〇°C的熱收縮率為± 3%以内。 12. 如巾請專利範圍f 8項所述的高結晶性銀粉,其中 IWD,。為2.卜5. 〇。(而於前式中,Di。及&。係各別表示基 於激光繞射散射式粒度分布測定法的累積分布ig容量%及 90容量%之中值粒徑(#以) 13. 一種高結晶性銀粉,其特徵在於:微晶徑為3〇〇 a 以上、平均粒徑Ds。為〇· 5 // m~l〇 # m、於7〇〇〇c的長度方向 的熱收縮率為± 3%以内。 14·如申請專利範圍第13項所述的高結晶性銀粉,其 中D9〇/D1d為2· ;1〜5· 0。(而於前式中,])1()及D9。係各別表示 基於激光繞射散射式粒度分布測定法的累積分布1〇容量% 及90容量%之中值粒徑(#πι)) 2213-6834-PF 28 200536636 七、指定代表圖·· (一) 本案指定代表圖為:無 (二) 本代表圖之元件符號簡單說明:無10. The highly crystalline silver powder according to item f8 of the Chinese Patent Application, wherein the average particle diameter is. (Where ^ represents the cumulative distribution based on the laser diffraction scattering particle size distribution method, 50 volume% median particle size (#m)) η. The highly crystalline silver powder as described in item 8 of the patent application scope, where The thermal contraction rate at 700 ° C is within ± 3%. 12. For example, the highly crystalline silver powder described in item f 8 of the patent, of which IWD. For 2. Bu 5. 〇. (In the previous formula, Di. and &. respectively represent the cumulative distribution ig volume% and 90 volume% median particle size (# 以) based on the laser diffraction scattering particle size distribution measurement method. 13. A high The crystalline silver powder is characterized in that the crystallite diameter is 300 m or more and the average particle diameter Ds is 0.5 · m / m ~ 10 # m, and the thermal shrinkage rate in the longitudinal direction at 7000c Within ± 3%. 14. Highly crystalline silver powder as described in item 13 of the scope of the patent application, where D90 / D1d is 2; 1 to 5.0. (And in the previous formula,)) 1 () and D9. It represents the cumulative distribution based on the laser diffraction scattering particle size distribution measurement method. 10% by volume and 90% by volume median particle size (# πι)) 2213-6834-PF 28 200536636 VII. Designated representative map · · (I) The designated representative map in this case is: None (II) The component symbols of this representative map are simply explained: None 八、本案若有化學式時,請揭示最能顯示發明特徵的化學式: 益8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: 2213-6834-PF 42213-6834-PF 4
TW094103609A 2004-02-10 2005-02-04 Highly crystalline silver powder and method for production thereof TWI286090B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004034121A JP4976642B2 (en) 2004-02-10 2004-02-10 High crystalline silver powder and method for producing the same

Publications (2)

Publication Number Publication Date
TW200536636A true TW200536636A (en) 2005-11-16
TWI286090B TWI286090B (en) 2007-09-01

Family

ID=34836167

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094103609A TWI286090B (en) 2004-02-10 2005-02-04 Highly crystalline silver powder and method for production thereof

Country Status (7)

Country Link
US (1) US20090023007A1 (en)
EP (1) EP1721690A1 (en)
JP (1) JP4976642B2 (en)
KR (1) KR101215458B1 (en)
CN (1) CN1925941A (en)
TW (1) TWI286090B (en)
WO (1) WO2005075133A1 (en)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008140785A1 (en) 2005-04-19 2008-11-20 Sdc Materials, Inc. Water cooling system and heat transfer system
JP5032005B2 (en) * 2005-07-05 2012-09-26 三井金属鉱業株式会社 High crystal silver powder and method for producing the high crystal silver powder
JP2007270312A (en) * 2006-03-31 2007-10-18 Mitsui Mining & Smelting Co Ltd Method for manufacturing silver powder, and silver powder
US7648557B2 (en) * 2006-06-02 2010-01-19 E. I. Du Pont De Nemours And Company Process for making highly dispersible spherical silver powder particles and silver particles formed therefrom
JP4879762B2 (en) * 2007-01-24 2012-02-22 三井金属鉱業株式会社 Silver powder manufacturing method and silver powder
US8575059B1 (en) 2007-10-15 2013-11-05 SDCmaterials, Inc. Method and system for forming plug and play metal compound catalysts
US20110195264A1 (en) * 2008-10-14 2011-08-11 Laird Technologies, Inc. Acicular Metal Particles Having a High Aspect Ratio and Non-Catalytic Methods for Making the Same
CN101716685B (en) * 2009-12-14 2011-08-24 昆明理工大学 Method for preparing spherical superfine silver powder by using chemical reduction method
US9090475B1 (en) 2009-12-15 2015-07-28 SDCmaterials, Inc. In situ oxide removal, dispersal and drying for silicon SiO2
US9126191B2 (en) 2009-12-15 2015-09-08 SDCmaterials, Inc. Advanced catalysts for automotive applications
US8652992B2 (en) 2009-12-15 2014-02-18 SDCmaterials, Inc. Pinning and affixing nano-active material
CN101834004B (en) * 2010-05-28 2013-01-09 中国乐凯胶片集团公司 Silver powder for conductive silver paste of solar battery electrode and preparation method thereof
US8366799B2 (en) * 2010-08-30 2013-02-05 E I Du Pont De Nemours And Company Silver particles and a process for making them
US8669202B2 (en) 2011-02-23 2014-03-11 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
CN102133645B (en) * 2011-03-04 2012-12-26 华南理工大学 Preparation method of environment-friendly micron-size triangular silver sheet
US8715387B2 (en) * 2011-03-08 2014-05-06 E I Du Pont De Nemours And Company Process for making silver powder particles with small size crystallites
TWI532059B (en) * 2011-03-31 2016-05-01 Taiyo Holdings Co Ltd Conductive paste, conductive pattern formation method and conductive pattern
CN102133635B (en) * 2011-05-02 2012-09-19 杨荣春 Silver powder and manufacturing method thereof
MY157634A (en) * 2011-06-21 2016-07-15 Sumitomo Metal Mining Co Silver Dust and Manufacturing Method Thereof
TWI428285B (en) * 2011-08-05 2014-03-01 China Steel Corp Micro-scaled flake silver particles and method for producing the same
US8679433B2 (en) 2011-08-19 2014-03-25 SDCmaterials, Inc. Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions
CN102310200B (en) * 2011-08-24 2014-09-03 明基材料有限公司 Nano silver particle forming method
JP5790433B2 (en) * 2011-11-18 2015-10-07 住友金属鉱山株式会社 Silver powder and method for producing the same
WO2013115339A1 (en) * 2012-02-02 2013-08-08 戸田工業株式会社 Silver microparticles, method for producing same, and electronic device, conductive film, and conductive paste containing said silver microparticles
JP5445721B1 (en) * 2012-03-07 2014-03-19 住友金属鉱山株式会社 Silver powder and method for producing the same
CN102689018B (en) * 2012-06-11 2015-02-25 清华大学深圳研究生院 Production method of nanometer silver wire material
JP5916547B2 (en) * 2012-07-18 2016-05-11 福田金属箔粉工業株式会社 Ultra-thin flaky silver powder and method for producing the same
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
WO2015013545A1 (en) 2013-07-25 2015-01-29 SDCmaterials, Inc. Washcoats and coated substrates for catalytic converters
US9517448B2 (en) 2013-10-22 2016-12-13 SDCmaterials, Inc. Compositions of lean NOx trap (LNT) systems and methods of making and using same
MX2016004991A (en) 2013-10-22 2016-08-01 Sdcmaterials Inc Catalyst design for heavy-duty diesel combustion engines.
CN103831444B (en) * 2014-03-11 2015-12-02 上海交通大学 A kind of preparation method of high crystallization flake silver powder
EP3119500A4 (en) 2014-03-21 2017-12-13 SDC Materials, Inc. Compositions for passive nox adsorption (pna) systems
JP6029719B2 (en) * 2014-07-31 2016-11-24 Dowaエレクトロニクス株式会社 Silver powder, method for producing the same, and conductive paste
KR101733165B1 (en) * 2015-08-12 2017-05-08 엘에스니꼬동제련 주식회사 The manufacturing method of silver powder for high temperature sintering conductive paste
WO2017073057A1 (en) * 2015-10-30 2017-05-04 Dowaエレクトロニクス株式会社 Silver powder and method for producing same
JP6856350B2 (en) * 2015-10-30 2021-04-07 Dowaエレクトロニクス株式会社 Silver powder and its manufacturing method
JP6911804B2 (en) * 2018-03-26 2021-07-28 三菱マテリアル株式会社 Manufacturing method of joint
KR101953619B1 (en) 2018-05-08 2019-03-05 대주전자재료 주식회사 Silver powder including radial hollow silver particle and it's fabrication method
JP7334076B2 (en) * 2019-06-27 2023-08-28 Dowaエレクトロニクス株式会社 Silver powder and its manufacturing method
RU2738174C1 (en) * 2020-02-18 2020-12-09 Акционерное общество "Уралэлектромедь" Method of producing fine silver powder
CN111790918B (en) * 2020-09-07 2020-12-22 西安宏星电子浆料科技股份有限公司 Preparation method of silver powder with low thermal shrinkage
CN112705726A (en) * 2020-12-17 2021-04-27 暨南大学 Preparation method of shape-controllable nano silver powder
CN114273666B (en) * 2021-12-24 2024-06-25 浙江光达电子科技有限公司 Silver powder for solar cell silver paste and preparation method thereof
CN115055690B (en) * 2022-06-01 2023-03-03 山东建邦胶体材料有限公司 Full-spherical polycrystalline silver powder with directionally-aggregated crystal grains and preparation method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307206A (en) * 1987-06-08 1988-12-14 Tanaka Kikinzoku Kogyo Kk Production of fine silver particles
JPH01104338A (en) * 1987-10-15 1989-04-21 Tanaka Kikinzoku Kogyo Kk Manufacture of silver colloid
JP2000001706A (en) * 1998-06-17 2000-01-07 Tanaka Kikinzoku Kogyo Kk High crystal silver particle, its production and conductor paste consisting of high crystal silver particle
JP2000001707A (en) * 1998-06-17 2000-01-07 Tanaka Kikinzoku Kogyo Kk Silver particle, its production and conductor paste consisting of silver particle
JP2000265225A (en) * 1999-03-15 2000-09-26 Aida Kagaku Kogyo Kk Manufacture of noble metal high strength sintered compact, and noble metal high strength sintered compact

Also Published As

Publication number Publication date
TWI286090B (en) 2007-09-01
WO2005075133A1 (en) 2005-08-18
CN1925941A (en) 2007-03-07
KR20070018025A (en) 2007-02-13
US20090023007A1 (en) 2009-01-22
EP1721690A1 (en) 2006-11-15
JP4976642B2 (en) 2012-07-18
KR101215458B1 (en) 2012-12-26
JP2005226094A (en) 2005-08-25

Similar Documents

Publication Publication Date Title
TW200536636A (en) Highly crystalline silver powder and method for production thereof
WO2017033911A1 (en) Metal paste having excellent low-temperature sinterability and method for producing the metal paste
TWI324953B (en)
EP1450376B1 (en) Ag COMPOUND PASTE
JP6274444B2 (en) Method for producing copper powder
WO2018080092A1 (en) Silver powder and preparation method therefor
KR102512682B1 (en) Ruthenium oxide powder, composition for thick film resistors, paste for thick film resistors and thick film resistors
JP2010534932A (en) Method for forming electrically conductive copper pattern layer by laser irradiation
KR101251567B1 (en) Nickel powder, process for producing the same, and conductive paste
JP5831055B2 (en) Plate-like ruthenium oxide powder and method for producing the same, and thick film resistor composition using the same
KR20210065989A (en) Silver powder, manufacturing method thereof, and conductive paste
JP6982688B2 (en) Surface-treated silver powder and its manufacturing method
CN109692971A (en) A kind of nano-silver powder and its preparation and the application in low-temperature cured conductive silver paste
JP4100244B2 (en) Nickel powder and method for producing the same
KR20200038742A (en) Silver powder manufacturing method
KR101335493B1 (en) Flake silver paste with excellent electrical property and method of manufacturing the same
JP2017039991A (en) Silver-coated copper powder, method for producing the same, and conductive paste using the same
JP5590289B2 (en) Method for producing silver paste
KR102302205B1 (en) Silver powder manufacturing method
JP2002356630A (en) Copper powder for low-temperature baking or conductive paste
JP2018043895A (en) Ruthenium dioxide powder and production method thereof, thick film resistor paste, and thick film resistor
TWI795545B (en) Composition for thick film resistors, paste for thick film resistors, and thick film resistors
WO2022137691A1 (en) Nickel powder, method for producing same, conductive composition, and conductive film
CN117324632B (en) Flake and spherical mixed silver powder and preparation method and application thereof
JP7065676B2 (en) A silver-coated metal powder and a method for producing the same, a conductive paste containing the silver-coated metal powder, and a method for producing a conductive film using the conductive paste.

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees