TW200536152A - Phosphor and manufacturing method thereof, and light source, led using said phosphor - Google Patents

Phosphor and manufacturing method thereof, and light source, led using said phosphor Download PDF

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TW200536152A
TW200536152A TW094105848A TW94105848A TW200536152A TW 200536152 A TW200536152 A TW 200536152A TW 094105848 A TW094105848 A TW 094105848A TW 94105848 A TW94105848 A TW 94105848A TW 200536152 A TW200536152 A TW 200536152A
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phosphor
light
scope
patent application
wavelength
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TWI262609B (en
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Akira Nagatomi
Kenji Sakane
Masahiro Gotoh
Shuji Yamashita
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Dowa Mining Co
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Priority claimed from JP2004207271A external-priority patent/JP5016187B2/en
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Abstract

Provided is a high-efficiency phosphor having an excitation band corresponding to the light in the ultraviolet-visible wavelength range (300 to 550 nm) emitted from a light emitting part which emits a blue color or ultraviolet light. A phosphor expressed by a composition formula of Ca0.985SiAlN3:Eu0.015 was obtained by preparing Ca nitride. Al nitride, Si nitride and Eu oxide, weighing the respective raw materials such that the molar ratio of the respective elements would be Ca:Al:Si:Eu=0.985:3:1:0.015, mixing the raw materials under a nitrogen atmosphere, and thereafter firing the obtained mixture in a nitrogen atmosphere at 1500 DEG C.

Description

200536152 九、發明說明: 【發明所屬之技術領域】 本發明係關於CRT、PDP、FED、EL、螢光顯示管等顯示 裝置、L E D、螢光燈等照明單元中所使用的螢光體,特別係 適合具備紫外•藍色等發光部,並發出可見光或白色光的 L E D、光源及照明單元等使用的螢光體,本發明係關於該螢 光體及其製造方法,暨使用該螢光體的光源、LED。 【先前技術】200536152 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to phosphors used in display units such as CRT, PDP, FED, EL, fluorescent display tubes, LEDs, fluorescent lamps and other lighting units, and particularly The phosphor is suitable for use in LEDs, light sources, and lighting units that are equipped with light emitting parts such as ultraviolet and blue and emit visible light or white light. The present invention relates to the phosphor, a method for manufacturing the same, and the use of the phosphor Light source, LED. [Prior art]

已知藉由藍色或紫外發光之發光元件與在該發光元件 所產生紫外〜藍色波長區域中具激發帶(excited band)之 螢光體的組合,便可獲得以發出白色光LED為代表的光源 或照明單元。 該LED等所使用的螢光體,已知有將Y2〇2S:Eu、 La2〇2S:Eu' 3. 5Mg0 · 0 . 5 M g F 2 · Ge〇2:Mn、(La、Μη、Sm)2〇2S · Ga2〇3使用作為紅色螢光體,將ZnS:Cu,Al、SrAl2〇4:Eu、 8八诞^11,^111使用作為綠色螢光體,將丫人〇:〇6使用作為黃色 螢光體,將 BAM:Eu、Sr5(P〇/i)3Cl:Eu、ZnS:Ag、(Sr,Ca, Ba,Mg)i〇(P〇4)6Cl2:Eu使用作為藍色螢光體。所以,組合該 等螢光體與發光部,便可獲得以白色或單色LED為代表的 光源或照明單元。 作為白色LED用螢光體有提案如:氧氮化物玻璃螢光體 (參照專利文獻1 )、以矽龍(S i a 1 ο η )為母體的螢光體(參照 專利文獻2、3 )、氮化矽系等含氮螢光體(參照專利文獻4、 5 ),更有使用該等螢光體之照明裝置的提案。 5 312ΧΡ/發發發明說明書(補件)/94-06/94105848 200536152 (專利文獻1 )曰本專利特開2 0 0 1 - 2 1 4 1 6 2號公報 (專利文獻2 )日本專利特開2 0 0 3 - 3 3 6 0 5 9號公報 (專利文獻3 )日本專利特開2 0 0 3 - 1 2 4 5 2 7號公報 (專利文獻4 )曰本專利特表2 0 0 3 - 5 1 5 6 5 5號公報 (專利文獻5 )日本專利特開2 0 0 3 - 2 7 7 7 4 6號公報 【發明内容】 (發明所欲解決之問題)It is known that by combining a blue or ultraviolet light emitting element with a phosphor having an excited band in the ultraviolet to blue wavelength region generated by the light emitting element, a white light emitting LED can be obtained as a representative Light source or lighting unit. It is known to use phosphors such as Y2〇2S: Eu, La2〇2S: Eu '3.5Mg0 · 0.5 Mg F 2 · Ge〇2: Mn, (La, Mn, Sm). ) 2〇2S · Ga2O3 was used as a red phosphor, ZnS: Cu, Al, SrAl2O4: Eu, 88 ^ 11, ^ 111 was used as a green phosphor, and the person was 〇: 〇6 Used as yellow phosphor, BAM: Eu, Sr5 (P〇 / i) 3Cl: Eu, ZnS: Ag, (Sr, Ca, Ba, Mg) i〇 (P〇4) 6Cl2: Eu used as blue Phosphor. Therefore, by combining these phosphors and the light emitting portion, a light source or lighting unit represented by a white or monochromatic LED can be obtained. Proposals for white LED phosphors include oxynitride glass phosphors (refer to Patent Document 1), phosphors based on silicon dragon (Sia 1 ο η) (refer to Patent Documents 2, 3), Nitrogen-containing phosphors such as silicon nitride (see Patent Documents 4 and 5), and a lighting device using such phosphors have been proposed. 5 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 (Patent Document 1) Japanese Patent Laid-Open No. 2 0 0 1-2 1 4 1 6 2 (Patent Document 2) Japanese Patent Laid-open 2 0 0 3-3 3 6 0 5 9 (Patent Document 3) Japanese Patent Laid-Open No. 2 0 0 3-1 2 4 5 2 7 (Patent Document 4) Japanese Patent Special Table 2 0 0 3- 5 1 5 6 5 (Patent Document 5) Japanese Patent Laid-Open No. 2 0 3-2 7 7 7 4 6 [Summary of the Invention] (Problems to be Solved by the Invention)

在上述以藉由藍色或紫外發光的發光部與對該發光部 所產生紫外〜藍色波長區域光具有激發帶的螢光體之組 合,而發出可見光、白色光的LED為代表的光源中,為提 升可見光或白色光輝度,除理所當然的提升發光部發光效 率之外,尚強烈要求改善螢光體發光效率。 以下,針對螢光體,以藉由藍色或紫外發光的發光元件 與螢光體的組合而發出白色光的LED為例進行説明。 當螢光體使用為白色LED用的情況時,因為隨螢光體發 光效率的提升亦將改善白色LED整體輝度,因而對發光元 件的發光波長,便要求發光效率更佳的螢光體。 例如Y A G : C e系黃色螢光體,當利用L E D發光元件的藍 色光而發光的情況時,將落在效率佳的激發範圍内,可獲 得良好的黃色發光,但是當利用L E D發光元件的紫外光發 光時,卻將偏離激發範圍,無法獲得高發光。 再者,相關紅色螢光體,因為現有螢光體的發光效率不 佳,因而在與其他顏色螢光體混合時,便採取增加紅色成 分螢光體的調配比俾彌補發光量的方法,但是仍要求效率 6 312XP/發發發明說明書(補件)/94-06/94105848 200536152 更佳的螢光體。 本發明係經考慮上述情事之後而完成的,提供一種從藍 色或紫外發光的發光元件,所發出紫外〜可見(3 0 0〜5 5 0 n m ) 波長區域的光所對應之具有激發帶的高效率螢光體,其製 造方法及使用該螢光體的光源。 (解決問題之手段)Among the light sources represented by the above-mentioned combination of a light-emitting portion emitting blue or ultraviolet light and a phosphor having an excitation band in the ultraviolet to blue wavelength region light generated by the light-emitting portion, and emitting visible light and white light In order to improve the brightness of visible light or white light, in addition to the natural enhancement of the luminous efficiency of the light emitting part, there is a strong demand for improving the luminous efficiency of the phosphor. In the following, the phosphor will be described by taking an example of an LED that emits white light by a combination of a blue or ultraviolet light emitting element and a phosphor. When the phosphor is used for a white LED, the brightness of the white LED will also be improved with the improvement of the luminous efficiency of the phosphor. Therefore, a phosphor with better luminous efficiency is required for the luminous wavelength of the light-emitting element. For example, YAG: C e-based yellow phosphor, when the blue light of the LED light emitting element is used to emit light, it will fall within the excitation range with good efficiency, and good yellow light emission can be obtained, but when the ultraviolet of the LED light emitting element is used, When light is emitted, it will deviate from the excitation range, and high light emission cannot be obtained. In addition, related red phosphors have a poor luminous efficiency. Therefore, when mixing with other phosphors, a method of increasing the blending ratio of red phosphors to compensate for the amount of luminescence is adopted, but Efficiency is still required 6 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 Better phosphor. The present invention is completed after considering the above-mentioned circumstances, and provides a light emitting element emitting light from blue or ultraviolet light, which emits light having an excitation band corresponding to light in a wavelength range of ultraviolet to visible (300 to 550 nm). High-efficiency phosphor, manufacturing method thereof, and light source using the phosphor. (Means for solving problems)

本發明者等便就上述課題,針對各種螢光體的母體組成 進行研究,結果發現更高效率且發光特性優越之具新穎母 體組成的螢光體。 第1目的的螢光體係 由組成式MniAaBbNn:Zz所表示者;其中, 上述螢光體中,Μ元素係價數Π價的元素,A元素係價 數ΠΙ價的元素,B元素係價數I V價的元素,N係氮,Z元 素係活 ^[匕劑(a c t i v a t 〇 r ) , ( ni + z ) : a : b : n = 1 : 1 : 1 : 3 o 第2目的的螢光體係 如第1目的之螢光體,其中, Μ 元素係從 Be、Mg、Ca、Sr、Ba、Zn、Cd、Hg 中,至少 選擇1個以上的元素; A 元素係從 B(硼)、Al、Ga、In、Tl、Y、Sc、P、As、 S b、B i中,至少選擇1個以上的元素; B 元素係從 Si、 Ge、 Sn、 Ti、 Hf、 M〇、W、 Cr、 Pb、 Zr 中,至少選擇1個以上的元素; Z元素係從稀土族元素或過渡金屬元素中,至少選擇1 個以上的元素。 7 312XP/發發發明說明書(補件)/94-06/94105848 200536152 第3目的的螢光體係 如第1或第2目的之任一螢光體,其中, A元素係A 1,B元素係S i。 第4目的的螢光體係 如第1至第3目的之任一螢光體,其中, 上述螢光體的母體構造中並未含氧。 第5目的的螢光體係 如第1至第4目的之任一螢光體,其中,The inventors of the present invention conducted research on the matrix composition of various phosphors, and as a result, found that a phosphor with a novel matrix composition having higher efficiency and excellent light emission characteristics. The first purpose fluorescent system is represented by the composition formula MniAaBbNn: Zz; among the above phosphors, the M element is a valence element, the A element is a valence element, and the B element is a valence element. IV-valent element, N-based nitrogen, and Z-based system are active [[activat 〇r], (ni + z): a: b: n = 1: 1: 1: 3 o The second purpose fluorescent system As for the phosphor of the first purpose, the M element is at least one element selected from Be, Mg, Ca, Sr, Ba, Zn, Cd, and Hg; the A element is selected from B (boron), Al , Ga, In, Tl, Y, Sc, P, As, S b, Bi, select at least one element; element B is selected from Si, Ge, Sn, Ti, Hf, M0, W, Cr Among Pb, Zr, at least one element is selected; Z element is at least one element selected from rare earth elements or transition metal elements. 7 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 The fluorescent system of the third purpose is any phosphor of the first or second purpose, in which A element is A 1, B element is S i. The phosphor system according to the fourth object is the phosphor according to any one of the first to third objects, wherein the matrix structure of the phosphor does not contain oxygen. The fluorescent system according to the fifth objective is the phosphor according to any one of the first to fourth objectives, wherein

上述Μ元素與上述活化劑Z元素的莫耳比:z / ( Hi + z )値, 係0 . 0 0 0 1以上、0 . 5以下。 第6目的的螢光體係 在第1至第5目的之任一螢光體,其中, Μ元素係從Mg、Ca、Sr、Ba、Zn中,至少選擇1個以上 的元素。 第7目的的螢光體係 如第1至第6目的之任一螢光體,其中, Z元素係從Eu、Mn、Ce中,至少選擇1個以上的元素。 第8目的的螢光體係 如第7目的之螢光體,其中, Z元素係E u。 第9目的的螢光體係 如第8目的之螢光體,其中, Μ元素係C a。 第1 0目的的螢光體係 8 3 12XP/發發發明說明書(補件)/94-06/94105848 200536152 如第1至第9目的之任一螢光體,其中, 上述螢光體係粉末狀。 第1 1目的的螢光體係 如第10目的之螢光體,其中, 上述螢光體的平均粒度係2 0 // m以下、1 // m以上。 第1 2目的的螢光體係 如第1至第1 1目的之任一螢光體,係含有:Molar ratios of the M element and the activator Z element: z / (Hi + z), which are equal to or greater than 0.0001 and equal to or less than 0.5. The fluorescent system according to the sixth aspect The phosphor according to any one of the first to fifth aspects, wherein the M element is at least one element selected from Mg, Ca, Sr, Ba, and Zn. The fluorescent system according to the seventh aspect The phosphor according to any one of the first to sixth aspects, wherein the Z element is at least one element selected from Eu, Mn, and Ce. The fluorescent system according to the eighth aspect is the phosphor according to the seventh aspect, wherein the element Z is Eu. The fluorescent system according to the ninth aspect is the phosphor according to the eighth aspect, wherein the M element is Ca. The fluorescent system of the 10th objective 8 3 12XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 The phosphor according to any of the first to ninth objectives, wherein the fluorescent system is in a powder form. The fluorescent system according to the eleventh aspect The phosphor according to the tenth aspect, wherein the average particle size of the phosphor is not more than 20 m and not more than 1 m. Fluorescent system of purpose 12 The phosphor according to any of purposes 1 to 11 contains:

當利用C ο Κ α射線形成粉末X射線繞射圖案中,將強度 最強的繞射尖峰相對強度設定為1 0 0 %時, 該X射線繞射光譜的布拉格角(2 0 ) ( B r a g g a n g 1 e )在 3 6 . 5 °〜3 7 . 5 °及4 1 . 9 °〜4 2 . 9 °範圍内,顯示出以相對強度1 0 °/〇 以上繞射尖峰之相為主的生成相。 第1 3目的的螢光體係 如第1至第1 1目的之任一螢光體,係含有: 當利用C ο Κ α射線形成粉末X射線繞射圖案中,將強度 最強的繞射尖峰相對強度設定為1 0 0 %時, 該X射線繞射光譜的布拉格角(2 0 )在3 6 . 5 °〜3 7 . 5 °、 4 1 . 9 ϋ〜4 2 . 9 °及5 6 . 3 °〜5 7 . 3 °範圍内,顯示出以相對強度 1 0 %以上繞射尖峰之相為主的生成相。 第1 4目的的螢光體係 如第1至第1 1目的之任一螢光體,係含有: 當利用C ο Κ α射線形成粉末X射線繞射圖案中,將強度 最強的繞射尖峰相對強度設定為1 0 0 %時’ 該X射線繞射光譜的布拉格角(2 0 )在3 6 . 5 °〜3 7 . 5 °、 9 312ΧΡ/發發發明說明書(補件)/94-06/94105848 200536152 40.9°〜41·9。、 41.9。〜42.9。、 56.3。〜57·3。、 66.0。〜67.0。、 7 5 . 8 °〜7 6 . 8 °及8 1 . 0 °〜8 3 . 0 °範圍内,顯示出以相對強度1 0 °/〇 以上繞射尖峰之相為主的生成相。 第1 5目的的螢光體係 如第12至第14目的之任一螢光體,其中, 上述生成相的結晶糸係斜方晶。 第1 6目的的螢光體係 如第1至第11目的之任一螢光體,其中,When the relative intensity of the diffraction peak with the strongest intensity is set to 100% in the powder X-ray diffraction pattern formed by C ο α rays, the Bragg angle (20) of the X-ray diffraction spectrum (B raggang 1 e) In the range of 36.5 ° to 37.5 ° and 41.9 ° to 42.9 °, a phase with diffraction peaks with a relative intensity of 10 ° / 〇 or more is shown. . The fluorescent system of the 13th object is any one of the phosphors of the 1st to the 11th objects, and contains: When the powder X-ray diffraction pattern is formed by using C ο α rays, the diffraction peak with the strongest intensity is opposed to When the intensity is set to 100%, the Bragg angle (20) of the X-ray diffraction spectrum is 36.5 ° to 37.5 °, 41.9 ° to 42.9 °, and 5 6. In the range of 3 ° ~ 5 7 3 °, the phase with diffraction peaks with a relative intensity of 10% or more is the main phase. The fluorescent system of the 14th object is any one of the phosphors of the 1st to 11th objects, and contains: When the powder X-ray diffraction pattern is formed by using C ο α rays, the strongest diffraction peaks are opposed to each other. When the intensity is set to 100%, the Bragg angle (20) of the X-ray diffraction spectrum is 36.5 ° to 37.5 °, 9 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 40.9 ° ~ 41 · 9. , 41.9. ~ 42.9. , 56.3. ~ 57 · 3. , 66.0. ~ 67.0. In the range of 75.8 ° ~ 76.8 ° and 81.0 ° ~ 83.0 °, the phase with diffraction peaks with a relative intensity of 10 ° / 〇 or more is displayed. The fluorescent system according to the 15th object The phosphor according to any one of the 12th to 14th objects, wherein the crystal of the above-mentioned generated phase is an orthorhombic orthorhombic crystal. The fluorescent system according to the sixteenth object is any one of the phosphors according to the first to eleventh objects, wherein

碳含有量係少於0. 0 8重量%。 第1 7目的的螢光體係 如第1至第11目的之任一螢光體,其中, 氧含有量係少於3 . 0重量%。 第1 8目的的螢光體係 如第1至第11目的之任一螢光體,其中, 碳含有量係少於0 . 0 8重量%,且氧含有量少於3. 0重量 % 〇The carbon content is less than 0.08% by weight. The fluorescent system according to the 17th object The phosphor according to any one of the 1st to 11th objects, wherein the oxygen content is less than 3.0% by weight. The fluorescent system according to the eighteenth object The phosphor according to any one of the first to eleventh objects, wherein the carbon content is less than 0.8% by weight and the oxygen content is less than 3.0% by weight 〇

具有第1至第18目的中任一螢光體與發出第1波長光 的發光部; 將上述第1波長光其中一部分當作激發源,使上述螢光 體依不同於上述第1波長的波長發光。 第2 0目的的光源係 如第1 9目的之光源,其中, 發出上述第1波長光的發光部係L E D。 10 312ΧΡ/發發發明說明書(補件)/94-06/94105848 200536152 第21目的的光源係 如第1 9或第2 0目的之光源,其中, 上述第1波長係300nm〜550ηπι波長。 第22目的的LED係 具有第1至第18目的中任一螢光體與發出第1波長光 的發光部; 將上述第1波長光的其中一部分當作激發源,使上述螢 光體依不同於上述第1波長的波長發光。It has any one of the first to eighteenth phosphors and a light-emitting part that emits light of the first wavelength; a part of the light of the first wavelength is used as an excitation source, so that the phosphor is at a wavelength different from the wavelength of the first wavelength Glow. The light source of the 20th object is the light source of the 19th object, wherein the light emitting part emitting light of the first wavelength is the LED. 10 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 The light source of the 21st purpose is the light source of the 19th or 20th purpose, wherein the first wavelength is 300nm ~ 550ηπ. The LED of the 22nd object has any one of the phosphors of the 1st to 18th objects and a light-emitting part that emits light of a first wavelength; a part of the light of the first wavelength is used as an excitation source, so that the phosphors are different The light is emitted at the wavelength of the first wavelength.

第2 3目白勺的LED係 如第22目的之LED,其中, 上述第1波長係300nm〜550nm波長。 第2 4目的的氮化物螢光體之製造方法,係 第1至第1 8目的中任一氮化物螢光體的製造方法; 將上述氮化物螢光體原料填充於氮化硼材質燒成容器内, 並在非活性環境中進行燒成而製得氮化物螢光體。 第2 5目的的氮化物螢光體之製造方法,係 如第2 4目的之氮化物螢光體之製造方法,其中, 上述氮化物螢光體原料係在1 2 0 0 °C〜1 7 0 0 °C溫度中進行 燒成。 第2 6目的的氮化物螢光體之製造方法,係 如第2 4或苐2 5目的之氮化物螢光體之製造方法,其中, 上述氮化物螢光體原料進行燒成之際,係在0 . 5 Μ P a以 下的壓力中進行燒成。 (發明效果) 11 312XP/發發發明說明書(補件)/94-06/94105848The LED of the 23rd mesh is the LED of the 22nd mesh, wherein the first wavelength is a wavelength of 300 nm to 550 nm. The method for producing a nitride phosphor according to the second objective is the method for producing a nitride phosphor according to any of the first to eighth objectives; the above-mentioned nitride phosphor raw material is filled in a boron nitride material and fired. A nitride phosphor is produced by firing in a container in an inactive environment. The method for producing a nitride phosphor according to the second 5th object is the method for producing a nitride phosphor according to the second 4th object, wherein the raw material of the nitride phosphor is at 1 2 0 ° C to 17 Baking is performed at a temperature of 0 0 ° C. The method for producing a nitride phosphor according to the 26th aspect is the method for producing a nitride phosphor according to the 24th or 25th aspect, in which the above-mentioned nitride phosphor raw materials are fired during the firing process. Firing is performed at a pressure of 0.5 MPa or less. (Effects of the Invention) 11 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848

200536152 第1至第18目的中,由組成式MmAaBbNn:Zz (m+z):a:b:n=l:l:l:3的螢光體,因為在從藍色 光之發光元件,所發出紫外〜藍色(波長區域3 0 (L· 中具有激發帶,而執行高效率發光,因而藉由與 外〜藍色光的發光部組合,便可獲得效率高、高輝 或白色LED或光源的照明單元。 再者,第10目的中,因為氮化物螢光體屬於 因而可輕易的實施氮化物螢光體的塗佈或填充。 φ 1 1目的中,因為氮化物螢光體的粉末平均粒度在 下、l//m以上,因而將可提升發光效率。 再者,第12至第15目的中,因為螢光體係發 長在580〜680nm範圍内,具有具高發光強度的優 性,而且在紫外〜可見光波長(300〜550nm)廣範圍 中,具有平坦且高效率之激發帶的激發帶特性。 再者,依照第1 6至第1 8目的中任一螢光體, 碳含有量少於0 . 0 8重量%的氮化物螢光體、氧含 3. 0重量%的氮化物螢光體,因此不管任一情況, 光無具作用的碳與氧不純物含有量偏少,故可抑 螢光體之發光強度降低情況,可提升該氮化物螢 光效率。 再者,第19至第21目的中任一光源,因為螢 光部所發光的既定寬波長區域(3 0 0〜5 5 0 n m )光中, 帶並發光,因而藉由該等氮化物螢光體與發光部 便可獲得發出可見光或白色光之高發光效率光源 312XP/發發發明說明書(補件)/9106/94105848 表示且 或紫外發 -5 5 0 n m )光 該發出紫 度之單色 粉末狀, 此外,第 2 0 # m 以 光尖峰波 越發光特 波長區域 因為屬於 有量少於 因為對發 制氮化物 光體的發 光體在發 具有激發 的組合, 12 200536152 再者,第22或第23目的的LED,因為氮化物螢光體在 發光部所發光的既定寬波長區域(3 0 0〜5 5 0 n in )光中,具有激 發帶並發光,因而藉由該等氮化物螢光體與發光部的組 合,便可獲得發出可見光或白色光之高發光效率LED。200536152 In the 1st to 18th objects, the phosphors with the compositional formula MmAaBbNn: Zz (m + z): a: b: n = l: l: l: 3 are emitted from blue light emitting elements. Ultraviolet to blue (wavelength region 3 0 (L · has an excitation band and performs high-efficiency light emission. Therefore, by combining with the external ~ blue light emitting part, high-efficiency, high-brightness, or white LED or light source illumination can be obtained In addition, in the tenth purpose, because the nitride phosphor belongs to, coating or filling of the nitride phosphor can be easily performed. Φ 1 In the purpose, the average particle size of the powder of the nitride phosphor is as follows. Above 1 // m, the luminous efficiency will be improved. In addition, in the 12th to 15th objectives, because the fluorescence system emits light in the range of 580 ~ 680nm, it has the advantage of high luminous intensity, and in the ultraviolet ~ In the wide range of visible light wavelengths (300 ~ 550nm), it has a flat and high-efficiency excitation band. In addition, according to any of the phosphors in the 16th to 18th objectives, the carbon content is less than 0. 0 8% by weight of nitride phosphors and 3.0% by weight of nitride phosphors due to oxygen, because In either case, the content of impure carbon and oxygen impurities is relatively small, so it can suppress the reduction of the luminous intensity of the phosphor and improve the fluorescent efficiency of the nitride. Furthermore, in the 19th to 21st objectives, Any light source emits visible light by banding and emitting light in a predetermined wide wavelength region (300 to 550 nm) emitted by the fluorescent portion, so visible light can be obtained by the nitride phosphor and the light emitting portion. Or white light with high luminous efficiency light source 312XP / Fafa Invention Specification (Supplement) / 9106/94105848 and UV light -5 50 nm) light should emit a monochromatic powder in purple. In addition, the 2 # # m The light emission peak wavelength range of the light peak wave is because it has a smaller amount because it has a combination of excitation to the light emitting body of the nitride light emitting body, 12 200536152 Furthermore, the 22nd or 23rd LED, because nitrogen The compound phosphor has an excitation band and emits light in a predetermined wide wavelength region (300 to 5500 n in) emitted by the light emitting portion. Therefore, by combining the nitride phosphor and the light emitting portion, You can get visible or white light Luminous efficiency of LED.

再者,依照第24目的的螢光體之製造方法,因為將氮 化物螢光體原料填充於氮化硼材質燒成容器内,並在非活 性環境中進行燒成而製得氮化物螢光體,因而便可製得碳 與氧不純物含有量較少的氮化物螢光體。依此因為可製得 對發光無具作用之不純物較少的氮化物螢光體,所以可抑 制發光強度降低情況,可提升氮化物螢光體的發光效率。 再者,依照第2 5或第2 6目的的螢光體之製造方法,便 可高生產性的製得抑制發光強度降低狀況,且提升氮化物 螢光體發光效率的氮化物螢光體。 【實施方式】 (本發明的螢光體結構與光學特性) 本發明的螢光體係具有依組成式M m A a B b N n : Z z表‘示且 (m + z):a:b:n=l:l:l:3的4元系母體構造螢光體。 其中,Μ元素係上述螢光體中價數為Π價的元素。A元 素係上述螢光體中價數為ΙΠ價的元素。B元素係上述螢光 體中價數為I V價的元素。N係氮。Z元素係在上述螢光體 中發揮活化劑作用。若螢光體具有該母體構造,便將成為 具高發光率的螢光體。 再者,若上述螢光體的母體構造採化學安定的結構,便 不易產生不均勻相,因此發光效率不致降低係屬最佳結 13 312XP/發發發明說明書(補件)/94-06/94105848 200536152 構。在此螢光體的母體構造為能形成化學安定的結構,最 好將上述螢光體設定為當依組成式MmAaBbNn:Zz表示時, 便為(m + z ) : a : b : η二1 : 1 : 1 : 3。理由係Μ元素係Π價,A元素 係ΙΠ價,B元素係I V價元素,且將與ΙΠ價氮進行化合而形 成安定的氮化合物之緣故所致。但是可判斷將引發若干的 組成偏差狀況。 在此,因為Π價金屬氮化物通常形成Μ 3 N 2的化學式,m 價金屬氮化物係形成A N的化學式,I V價金屬氮化物係形 φ 成B 3 N 4的化學式,因而在將該等分別混合成M : A : B二:1 : 1 狀態方面,僅要將各氮化物原料依莫耳比1 : 3 : 1進行混合 的話便可。但是,當Z元素採用如Π價元素為活化劑的情 況時,因為取代部分Μ元素,故便將形成(m + z ) : a : b : η =1:1:1:30 藉此便可形成化學安定的結構,判斷將可獲得高效率· 高輝度螢光體。Furthermore, according to the method for manufacturing a phosphor according to the 24th object, nitride phosphors are filled with a boron nitride material firing container and baked in an inactive environment to obtain nitride phosphors. Nitride phosphors with less carbon and oxygen impurities can be prepared. Accordingly, a nitride phosphor having fewer impurities that have no effect on light emission can be obtained, so that the decrease in the luminous intensity can be suppressed, and the luminous efficiency of the nitride phosphor can be improved. Furthermore, according to the method for manufacturing a phosphor according to the 25th or 26th objective, a nitride phosphor that suppresses the decrease in luminous intensity and improves the luminous efficiency of the nitride phosphor can be produced with high productivity. [Embodiment] (Fluorescent structure and optical characteristics of the present invention) The fluorescent system of the present invention has a composition formula M m A a B b N n: Z z, and (m + z): a: b : n = l: l: l: 3 The quaternary parent structure phosphors. Among them, the M element is an element having a valence number in the above-mentioned phosphor. The element A is an element having a valence of 1 to 2 in the phosphor. The B element is an element having a valence of I to V in the phosphor. N is nitrogen. The element Z functions as an activator in the phosphor. If the phosphor has this matrix structure, it will become a phosphor with high luminous efficiency. Furthermore, if the mother structure of the above-mentioned phosphor adopts a chemically stable structure, it is difficult to generate an uneven phase, so the luminous efficiency will not be reduced. This is the best structure. 94105848 200536152 structure. Here, the structure of the phosphor is capable of forming a chemically stable structure. It is best to set the above phosphor to be (m + z) when expressed by the compositional formula MmAaBbNn: Zz: a: b: η = 2 : 1: 1: 3. The reason is that the element M is a valence, the element A is a valence, and the element B is a valence, and it is combined with a valence nitrogen to form a stable nitrogen compound. However, it can be judged that several compositional deviations will be caused. Here, since the valent metal nitride usually forms the chemical formula of M 3 N 2, the m valent metal nitride system forms the chemical formula of AN, and the IV valent metal nitride system forms the chemical formula of φ into B 3 N 4, so we are making such a formula. In the state of M: A: B2: 1: 1, it is only necessary to mix each nitride raw material with an Emol ratio of 1: 3: 1. However, when the Z element is used as a valence element as an activator, it will form (m + z): a: b: η = 1: 1: 1: 30 because it replaces part of the M element. By forming a chemically stable structure, it is judged that a high-efficiency and high-brightness phosphor will be obtained.

上述Μ元素最好為從Be、Mg、Ca、Sr、Ba、Zn、Cd、Hg 中,至少選擇1個以上的元素。換言之,M元素可單獨為 如C a,亦可為C a、M g、…等的混合物。 上述A元素最好為從B(石朋)、Al、Ga、In、Tl、Y、Sc、 P、As、Sb、Bi中,至少選擇1個以上的元素。換言之,A 元素可單獨為如A 1,亦可為A 1、G a、…等的混合物。 上述B元素最好為從Si、Ge、Sn、Ti、Hf、Mo、W、Cr、 Pb、Zr中,至少選擇1個以上的元素。換言之,B元素可 單獨為如S i,亦可為S i、Ge、…等的混合物。 14 312XP/發發發明說明書(補件)/94-06/94105848 200536152 Z元素最好為從稀土族元素或過渡金屬元素中,至少選 擇1個以上的元素。換言之,Z元素可單獨為如Eu,亦可 為E u、L a、…等的混合物。 藉由將上述Μ元素、A元素、B元素、Z元素形成上述構 造,便可更加提高螢光體發光效率。The M element is preferably at least one element selected from Be, Mg, Ca, Sr, Ba, Zn, Cd, and Hg. In other words, the M element may be alone, such as Ca, or a mixture of Ca, Mg, ... and the like. The A element is preferably at least one element selected from B (Shi Peng), Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi. In other words, the A element may be alone such as A 1 or a mixture of A 1, G a,... The B element is preferably at least one element selected from Si, Ge, Sn, Ti, Hf, Mo, W, Cr, Pb, and Zr. In other words, the B element may be alone, such as Si, or a mixture of Si, Ge, ... and the like. 14 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 Z element is preferably at least one element selected from rare earth elements or transition metal elements. In other words, the Z element may be alone, such as Eu, or a mixture of Eu, La, ... and the like. By forming the M element, A element, B element, and Z element as described above, the luminous efficiency of the phosphor can be further improved.

當A元素為A 1、B元素為S i時,各自的氮化物一般係 使用於熱傳材料或結構材料方面,可輕易取得且廉價。此 外對環境負荷易較小。所以,藉由將該等元素選擇作為原 料,便可獲得廉價且易使用的螢光體,屬最佳構成。 本發明的螢光體從依組成式MmAaBbNn:Zz表示且(m + z) :a : b : η = 1 : 1 : 1 : 3中得知,在構成元素中並未含氧,係屬於 不同於與習知具有矽龍系母體(S i - Α卜0 - Ν系)螢光體、具 有S i - 0 - N系母體之螢光體的組成系。依照本發明者的研 究,發現若螢光體中的氧含有量偏多,將有發光效率降低, 且螢光體發光波長朝短波長側位移的傾向。據此觀點,在 母體構成元素中並未含氧的本發明螢光體,不僅發光效率 高,且可避免發光波長朝短波長側位移,屬最佳構成。 在本發明的螢光體中,Μ元素與活化劑Z元素的莫耳比 z / (m + ζ ),最好在0.0001以上、0.5以下的範圍内。若Μ 元素與活化劑Ζ元素的莫耳比z / ( m + ζ )在該範圍内,便可 避免因活化劑含有量過剩而衍生濃度消光,導致發光效率 降低的狀況發生,反之,亦可避免因活化劑含有量過少而 衍生發光作用原子過少,導致發光效率降低的狀況發生。 隨所添加活化元素Z的種類,雖z / ( m + ζ )的最恰當比率有 15 312XP/發發發明說明書(補件)/94-06/94105848When the A element is A 1 and the B element is S i, the respective nitrides are generally used for a heat transfer material or a structural material, which are easily available and inexpensive. In addition, it is easy to reduce the environmental load. Therefore, by selecting these elements as raw materials, inexpensive and easy-to-use phosphors can be obtained, which is an optimal configuration. According to the phosphor of the present invention, it is represented by the composition formula MmAaBbNn: Zz and (m + z): a: b: η = 1: 1: 1: 3 Yu Yu is familiar with the composition system of a silicon dragon matrix (S i-ΑΟ0-Ν system) phosphor, and a phosphor having a Si-0-N system matrix. According to the study by the present inventors, it has been found that if the content of oxygen in the phosphor is too large, the luminous efficiency will decrease, and the phosphor's emission wavelength will tend to shift toward the short wavelength side. From this viewpoint, the phosphor of the present invention, which does not contain oxygen in the constituent elements of the matrix, not only has high luminous efficiency, but also prevents the emission wavelength from shifting toward the short-wavelength side, which is the optimal composition. In the phosphor of the present invention, the molar ratio z / (m + ζ) of the M element to the activator Z element is preferably in the range of 0.0001 or more and 0.5 or less. If the molar ratio z / (m + ζ) of the M element and the activator Z element is within this range, it can avoid the situation that the derivative concentration is extinction due to the excessive content of the activator, which leads to the reduction of the luminous efficiency, and vice versa. Avoiding too few derivatized light-emitting atoms due to too little activator content, leading to a decrease in luminous efficiency. Depending on the type of activating element Z added, although the most appropriate ratio of z / (m + ζ) is 15 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848

200536152 若干不同,但是最好在0.0005以上、0.1以下的範匱 將可獲得良好的發光。 本發明螢光體的Μ元素若屬於從Mg、Ca、Sr、Ba 中,至少選擇1個以上的元素,便屬於原料取得容易 境負荷小的最佳構成。 若本發明螢光體的Z元素係屬於從Eu、Mn、Ce中 少選擇1個以上的元素,便將提高該螢光體的發光效 屬於最佳構成。 若本發明螢光體的Z元素為E u,因為發光波長將顯 色波長,因而將可獲得發光效率佳之白色發光單元用 系螢光體,係屬於最佳構成。 若本發明螢光體的Μ元素為Ca、A元素為A1、B元 S i、Z元素為E u,因為原料取得容易且環境負荷較小 螢光體的發光波長顯示紅色波長,因而將可獲得發光 佳之白色發光單元用紅色系螢光體,係屬於最佳構成 當本發明螢光體為粉體的情況時,粉體平均粒度最 2 0 # m以下。理由係判斷螢光體粉體發光主要發生於 表面,若平均粒徑超過2 0 // m,螢光體粉體平均單位 的表面積將變少的緣故。此外,依本發明者等的探討 平均粒徑小於1 // m時,發光效率亦將降低。所以,本 螢光體粉體的平均粒度在2 0 // m以下、1 /z m以上將屬 構成。 此外,若考慮將該螢光體粉體使用作為LED用螢光 體時,便將該螢光體粉體粉末與樹脂混合並塗佈於該 312XP/發發發明說明書(補件)/94-06/94105 848200536152 There are several differences, but it is best to have a range of 0.0005 or more and 0.1 or less to obtain good light emission. If the M element of the phosphor of the present invention belongs to at least one element selected from Mg, Ca, Sr, and Ba, it belongs to an optimal structure with low raw material load and easy environmental load. If the element Z of the phosphor of the present invention belongs to at least one element selected from Eu, Mn, and Ce, the luminous efficacy of the phosphor will be improved and it will be an optimal composition. If the Z element of the phosphor of the present invention is Eu, since the emission wavelength will be the color wavelength, a white phosphor with excellent luminous efficiency can be obtained, which belongs to the best structure. If the M element of the phosphor of the present invention is Ca, the A element is A1, the B element Si, and the Z element is Eu, since the raw material can be easily obtained and the light emitting wavelength of the phosphor with a small environmental load shows a red wavelength, it will be possible to A red phosphor for a white light-emitting unit with good luminescence is obtained, which belongs to the best composition. When the phosphor of the present invention is a powder, the average particle size of the powder is at most 20 # m. The reason is that it is judged that the luminescence of the phosphor powder mainly occurs on the surface. If the average particle diameter exceeds 20 // m, the average surface area of the phosphor powder will be reduced. In addition, according to discussions by the present inventors, when the average particle diameter is less than 1 // m, the luminous efficiency will also decrease. Therefore, the average particle size of this phosphor powder is less than 20 / m and more than 1 / zm. In addition, if the phosphor powder is considered to be used as a phosphor for LEDs, the phosphor powder is mixed with a resin and applied to the 312XP / Fafa Invention Specification (Supplement) / 94- 06/94105 848

1内, 、Zn 且環 ,至 率係 示紅 紅色 素為 ,該 效率 〇 好在 粒子 重量 ,當 發明 最佳 體粉 LED 16 200536152 上,就從獲得良好塗佈性的觀點,平均粒徑最好在2 0 m 以下、1 // m以上。 藉由組合本發明所獲得螢光體與例如藍色或紫外發光 的光源,便可製得可見光單色或白色的高效率光源。 本發明所獲得螢光體因為將接受3 0 0〜5 5 0 n m寬範圍之激 發範圍的光並發光,因而藉由組合藍色或紫外發光的光 源,便可製得可見光單色或白色的高效率光源。Within 1, Zn and ring, the yield is shown as red-red pigment. The efficiency is better than the weight of the particles. When the best body powder LED 16 200536152 is invented, the average particle size is the most from the viewpoint of obtaining good coating properties. Fortunately, it is below 20 m and above 1 // m. By combining the phosphor obtained by the present invention with a light source such as blue or ultraviolet light emission, a high-efficiency light source of visible light monochrome or white can be obtained. The phosphor obtained by the present invention will receive light in a wide excitation range of 300 to 550 nm and emit light. Therefore, by combining a blue or ultraviolet light source, a monochromatic or white visible light can be obtained. High efficiency light source.

藉由組合本發明所獲得螢光體與例如藍色或紫外發光 的L E D發光部,便可製得可見光單色或白色的高效率L E D。 本發明所獲得螢光體因為將接受3 0 0〜5 5 0 n m寬範圍之激 發範圍的光並發光,因而藉由組合藍色或紫外發光的LED 發光部,便可製得可見光單色或白色的高效率LED。 (本發明的螢光體粉末X射線繞射光譜) 其次,針對本發明螢光體所顯示出的粉末X射線繞射圖 案,參照圖1 ( A )、( B )進行説明。 圖1 ( A )所示係本發明螢光體之一例,係後述實施例1 的螢光體依C ο Κ α 射線所形成的粉末X射線繞射圖案,圖 1 (Β)係該X射線繞射圖案與JCPDS卡的尖峰比較結果。其 中,圖1 ( Β )中佔據上半部的尖峰數據,係將圖1 ( A )所示主 要尖峰的布拉格角(2 0 )與強度,依線性位置與高度表示。 其次,佔據下半部的卡尖蜂,係將J C P D S卡中所記載 〇3八13丨心(39-〇 74 7 )結晶主要尖峰的布拉格角(20)與強度, 依線性位置與高度表示。(其中,為求二尖峰比較上的方 便,C a A 1 S 1 N 3結晶的尖峰強度係上下顛倒表示。) 17 312XP/發發發明說明書(補件)/94-06/94105848 200536152By combining the phosphor obtained in the present invention with, for example, a blue or ultraviolet light emitting LED light emitting portion, a high-efficiency LED can be obtained in monochromatic or white light. Since the phosphor obtained by the present invention will receive light in a wide excitation range of 300 to 550 nm and emit light, by combining blue or ultraviolet light emitting LED light emitting parts, a monochromatic or visible light can be produced. White high efficiency LED. (X-ray diffraction spectrum of phosphor powder of the present invention) Next, the powder X-ray diffraction pattern displayed by the phosphor of the present invention will be described with reference to Figs. 1 (A) and (B). FIG. 1 (A) shows an example of the phosphor of the present invention. It is a powder X-ray diffraction pattern formed by the phosphor of C ο α rays in Example 1 described later. FIG. 1 (B) shows the X-ray. The diffraction pattern is compared with the spikes of the JCPDS card. Among them, the spike data occupying the upper half in FIG. 1 (B) represents the Bragg angle (20) and intensity of the main spikes shown in FIG. 1 (A) according to the linear position and height. Secondly, the cardinal bee that occupies the lower part is the Bragg angle (20) and the intensity of the main peaks of the crystals recorded in the J C P DS card, which are expressed in terms of linear position and height. (Among them, for the sake of comparison of mitral peaks, the peak intensity of the C A A 1 S 1 N 3 crystal is shown upside down.) 17 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152

由圖1 ( B )所示二尖峰的比較中得知,本發明螢光體與 J C P D S卡所記載C a A 1 S 1 N 3結晶,雖主要尖峰整體圖案相類 似,但是若詳細觀之,將發現本發明螢光體的尖峰均朝布 拉格角(2 0 )變小的方向位移,二者雖類似,但是卻具有結 晶面間隔不同的結晶結構。其中,導致二者結晶結構差異 的要因,可認為J C P D S卡所記載C a A丨S i N 3係原料使用C a 0、 A 1 N、S i 3 N 4,相對於此,因為本發明螢光體係使用相關於 C a 3 N 2、A 1 N、S i N 4與構成母體構造的元素之氮化物原料, 因而二者結晶結構中,於結構中所存在的氧量便有差異, 且當本發明螢光體的情況時,部分Ca將被取代為Eu等緣 故所致。特別係主要尖峰的全體圖案相類似,即意味著可 判斷本發明螢光體的生成相,亦具有與J C P D S卡所記載 C a A 1 S i N 3結晶為相同的斜方晶。 由上述現象,本發明者等判斷本.發明螢光體雖類似 J C P D S卡所記載的C a A 1 S i N 3結晶,但是卻具有新穎結晶結 構,並對具有該新穎結晶結構的本發明螢光體結構,利用 該螢光體所示X射線繞射圖案進行規範。 在此針對本發明螢光體所含生成相之X射線繞射圖案中 的主要尖峰進行説明。 由圖1 ( A )中明顯得知,本發明螢光體中所含生成相,係 在布拉格角(20 )為 36.5°〜37.5°、40.9°〜41.9°、41.9°〜 42.9°、56· 3。〜57. 3。、66. ◦。〜67. 0。、75. 8。〜76, 8。及 81 · 0。〜 8 3 . 0 °範圍中具有特徵尖峰,其中在3 6 . 5 °〜3 7 . 5 °、4 1 . 9 ϋ〜 4 2 . 9 °範圍中的尖峰係強度特別強的特徵尖峰,5 6 . 3 °〜 18 312ΧΡ/發發發明說明書(補件)/94-06/94105848 200536152 5 7 . 3 °範圍内的尖峰則強度次於其的特徵尖峰。該等尖峰 均屬於當將該X射線繞射圖案中強度最強的繞射尖峰相對 強度設為1 0 0 %時,具有1 0 %以上相對強度的繞射尖峰。 再者,若對該等尖峰就從該繞射圖案半值寬觀點觀之, 半值寬將全部在0 . 2 5 °以下獲得尖銳繞射尖峰。該尖銳繞 射尖峰係顯示生成相不具有非晶質結構且結晶性優越的結 構0From the comparison of the mitral peaks shown in FIG. 1 (B), it is known that the phosphors of the present invention are similar to the C a A 1 S 1 N 3 crystals recorded in the JCPDS card. Although the overall pattern of the main peaks is similar, if you look at it in detail, It will be found that the peaks of the phosphor of the present invention are all shifted toward a direction in which the Bragg angle (20) becomes smaller. Although the two are similar, they have crystal structures with different crystal plane intervals. Among them, the factors that cause the difference in the crystal structure of the two can be considered to use Ca 0, A 1 N, and Si 3 N 4 as the Ca A 丨 S i N 3 series raw materials recorded in the JCPDS card. In contrast, because the present invention The light system uses nitride raw materials related to Ca 3 N 2, A 1 N, Si N 4 and the elements constituting the parent structure, so the crystal structure of the two has a difference in the amount of oxygen present in the structure, and In the case of the phosphor of the present invention, part of Ca will be replaced by Eu and the like. In particular, the overall pattern of the main peaks is similar, which means that the formation phase of the phosphor of the present invention can be judged, and it also has the same orthorhombic crystal as the C a A 1 S i N 3 crystal described in the J C P D S card. From the above phenomenon, the present inventors judge the present invention. Although the phosphor of the invention is similar to the Ca A 1 S i N 3 crystal described in the JCPDS card, it has a novel crystal structure, and the phosphor of the present invention having the novel crystal structure The structure of the light body is regulated using the X-ray diffraction pattern shown by the phosphor. Here, the main peaks in the X-ray diffraction pattern of the generated phase contained in the phosphor of the present invention will be described. It is apparent from FIG. 1 (A) that the generated phases contained in the phosphor of the present invention are at Bragg angles (20) of 36.5 ° to 37.5 °, 40.9 ° to 41.9 °, 41.9 ° to 42.9 °, 56 · 3. ~ 57. 3. , 66. ◦. ~ 67.0. , 75.8. ~ 76, 8. And 81 · 0. There are characteristic spikes in the range of ~ 8 3 °, among which the peaks in the range of 36.5 ° ~ 37.5 °, 41.9 ° ~ 42.9 ° are particularly strong, 5 6.3 ° ~ 18 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 5 7.3 Spikes in the range of 3 ° are inferior to their characteristic spikes. These spikes belong to diffraction spikes having a relative intensity of more than 10% when the relative intensity of the diffraction peak with the strongest intensity in the X-ray diffraction pattern is set to 100%. Furthermore, if these peaks are viewed from the perspective of the half-value width of the diffraction pattern, the half-value width will be all below 0.25 ° to obtain sharp diffraction peaks. This sharp diffraction peak system shows a structure having a non-amorphous structure and a superior crystallinity.

本發明螢光體所顯示出的上述X射線繞射圖案特徵與具 有優越發光特性及良好激發帶特性間的詳細關聯,雖尚未 明確,但是大概可認為如下述。 首先,在X射線繞射圖案中,判斷可依單相獲得標的生 成相的尖峰圖案,將與本發明螢光體具有優越發光特性與 良好激發帶特性的情況具有密切關係。其中,該X射線繞 射圖案中,並未發現製作螢光體時所使用原料(C a 3 N 2、 A 1 N、S i 3 N 4、E u 2 0 3 )尖峰之現象,可認為係依單相獲得標的 生成相的結果。即在螢光體製作時,若燒成溫度不夠、原 料裝填量不恰當,在燒成後的螢光體中,除標的生成相之 外,尚將存在上述原料多餘部分,造成激發光所照射平均 單位面積的螢光體量減少,且該多餘原料將吸收激發光或 所發出的光,因而將造成螢光體發光效率降低,將無法獲 得優越的發光特性。所以,X射線繞射圖案中並未發現上 述原料尖峰的特徵,可認為表示測量對象的螢光體將具有 優越發光特性與良好激發帶。 再者,X射線繞射尖峰強度的強弱,可認為係反映生成 19 312XP/發發發明說明書(補件)/94-06/94 ] 05848 200536152 相的結晶性高低。所以,生成相結晶性較高的情況,可認 為將形成生成相中的E u2 +周圍容易發光之結構,而且藉由 連續規則的形成此結構,便可獲得優越的發光特性。相對 於此,X射線繞射尖峰強度較弱,便判斷結晶性較低,此 情況下,因為發光中心的Eu2 +周圍結構不夠規則,因而Eu2 與E u2 +間的距離將過度靠近,導致引發濃度消光情況,且 在Eu2 +應該進入之一側中並未有Eu2+進入,應該可判斷將 無法獲得優越發光特性。Although the detailed correlation between the above-mentioned X-ray diffraction pattern characteristics exhibited by the phosphor of the present invention and the characteristics having excellent light emission characteristics and good excitation band characteristics has not been clarified, it may be considered as follows. First, in the X-ray diffraction pattern, it is judged that the peak pattern of the target generated phase can be obtained by a single phase, which will be closely related to the case where the phosphor of the present invention has excellent light emission characteristics and good excitation band characteristics. Among them, in this X-ray diffraction pattern, the phenomenon of peaks of the raw materials (C a 3 N 2, A 1 N, Si 3 N 4, and Eu 2 0 3) used in making the phosphor was not found. The results of the target generation phase are obtained by single phase. That is, when the phosphor is manufactured, if the firing temperature is insufficient and the amount of raw materials is not appropriate, in the fired phosphor, in addition to the target formation phase, there will be an excess of the above raw materials, causing the excitation light to be irradiated. The average amount of phosphor per unit area is reduced, and the excess material will absorb the excitation light or emitted light, so the luminous efficiency of the phosphor will be reduced, and superior luminous characteristics will not be obtained. Therefore, the characteristics of the above-mentioned peaks of the raw materials were not found in the X-ray diffraction pattern, and it can be considered that the phosphor indicating the measurement object will have superior light emission characteristics and a good excitation band. In addition, the intensity of the X-ray diffraction peak intensity can be considered to reflect the crystallinity of the phase of 19 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94] 05848 200536152. Therefore, in the case where the crystallinity of the generated phase is high, it can be considered that a structure that emits light around Eu 2 + in the generated phase will be formed, and by continuously and regularly forming this structure, excellent light emitting characteristics can be obtained. In contrast, the intensity of X-ray diffraction peaks is weak, so it is judged that the crystallinity is low. In this case, because the Eu2 + surrounding structure of the luminous center is not regular enough, the distance between Eu2 and Eu2 + will be too close, which will cause the In the case of concentration extinction, and there is no Eu2 + entry on one side where Eu2 + should enter, it should be judged that superior luminescence characteristics will not be obtained.

最後,在布拉格角(2 0 )為3 8〜4 (Γ附近所出現的尖峰較 弱,最好完全未被發現可能在該尖峰右側附近出現的尖峰 (但是該等尖峰將重疊,在判讀上必須注意),可判斷將反 映著具有優越發光特性與良好激發帶特性。此現象可判斷 在該布拉格角度(2 0 ) 3 8〜4 0 °附近所出現的尖峰,係屬於 螢光體原料的A1N尖峰與CaAlSiN3:Eu固有尖峰重疊的尖 峰。即如上述,係針對在螢光體製作時,若燒成溫度不夠、 原料裝填量不恰當,在燒成後將於螢光體中殘留多餘原 料,而影響發光特性等現象進行說明,其中若殘留A 1 N, 因為該A 1 N呈灰色,因而將吸收螢光體試料所發出的光或 激發光的光,應可判斷將直接關聯於發光強度降低現象。 所以,在為能獲得強發光強度之螢光體方面,最好在3 8〜4 0e 附近的A 1 N繞射尖峰強度較弱,因而可判斷二尖峰重疊的 3 8〜4 0 ϋ附近所出現的尖峰較弱,尤其是最好可能在該 C a A 1 S i Ν 3 : E u固有尖峰右側附近所出現A 1 Ν尖峰完全未被 發現。 20 312XP/發發發明說明書(補件)/94-06/94105848 200536152 在此針對本發明螢光體的粉末χ射線繞射圖案測量方法 進行説明。 所測量的螢光體係在燒成後於研鉢中,利用球磨機等粉 碎手段粉碎為既定(最好2 0 // m〜1 // m )平均粒徑,再裝填於 試料支撐架中使上端呈平坦狀態,並利用XRD裝置的理學 電氣股份有限公司製「R I N T 2 0 0 0」施行測量。測量條件 如下述: 使用測量機:理學電氣股份有限公司製「R I N T 2 0 0 0」Finally, the Bragg angle (20) is 3 8 ~ 4 (the spikes appearing near Γ are weak, it is best not to find any spikes that may appear near the right side of the spike (but these spikes will overlap, in interpretation) It must be noted) that it can be judged that it will reflect the characteristics of excellent luminescence and good excitation band. This phenomenon can be judged that the peaks that appear near the Bragg angle (20) 3 8 ~ 4 0 ° belong to the phosphor raw materials. A1N spike overlaps with CaAlSiN3: Eu intrinsic spike. That is, as mentioned above, it is aimed at the production of phosphors, if the firing temperature is not enough and the amount of raw materials is not appropriate, excess raw materials will remain in the phosphors after firing. It will explain the phenomena that affect the luminous characteristics. If A 1 N remains, because the A 1 N is gray, it will absorb the light emitted by the phosphor sample or the light of the excitation light. It should be judged that it will be directly related to the luminescence. Intensity reduction phenomenon. Therefore, in order to obtain a phosphor with a strong luminous intensity, it is preferable that the intensity of the A 1 N diffraction peak around 3 8 to 4 0e is weak, so it can be judged that the mitral peak overlaps 3 8 to 4 0 nearby The spikes that appear are relatively weak, especially the A 1 Ν spikes that may be best located near the right side of the Ca A 1 S i Ν 3: E u intrinsic spikes are completely undiscovered. 20 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 The method of measuring the powder X-ray diffraction pattern of the phosphor of the present invention will be described here. The measured fluorescence system is pulverized into a predetermined size by a pulverizing means such as a ball mill after firing. (Preferably 2 0 // m ~ 1 // m), average particle diameter, and then load it into the sample support frame to make the upper end flat, and use "RINT 2 0 0 0" manufactured by Rigaku Electric Co., Ltd. of XRD device Measurement. The measurement conditions are as follows: Measuring machine used: "RINT 2 0 0 0" manufactured by Rigaku Corporation

X射線管球:C ο Κ α 管電壓:4 0 k V 管電流:3 0 m A 掃描方法:2 0 / 0 掃描速度:0 . 0 3 ° / m i η 取樣間隔:0 . 0 1 ° 起始角度(2 0 ) : 1 0 ° 停止角度(2 0 ) : 9 0 ° 再者,相關布拉格角(2 0 )偏移現象,可判斷係因X射 線所照射試料面未呈平坦狀態、X射線測量條件(特別係指 掃描速度)不同等而發生偏移現象。因此上述特徵之繞射尖 峰可出現的範圍亦將產生若干偏移,可認為此現象將被容 許。在本說明書中,為能盡量抑制該偏移現象,便在將掃 描速度設為0 . 0 3 ° / m i η的情況下,於螢光體試料中混合 S i,並藉由在X射線測量後補正S i尖锋偏移,而求取布拉 格角(2 Θ )。 21 312XP/發發發明說明書(補件)/94-06/94105848 200536152 (本發明螢光體之製造方法) 在此針對本發明紅色螢光體之製造方法例,係以由組成 式 CaAlSiN3:Eu(其中,Eu/(Ca + Eu) = 0.020)所示螢光體之 製造為例進行説明。 Μ元素、A元素、B元素的各氮化物原料雖可為市售原 料,但是因為純度越高越好,因此最好準備2N以上,尤以 3 N以上的原料為佳。各原料粒子的粒徑一般就從促進反應 的觀點而言,最好為微粒子,但是隨原料的粒徑、形狀之 φ 不同,所獲得螢光體的粒徑、形狀亦將有所變化。因此只 要配合最終所獲得螢光體要求的粒徑,準備具有近似粒徑 之氮化物原料的話便可。Z元素之原料雖以市售氮化物原 料或金屬單體為佳,但是因為添加量屬少量,因而即便使 用氧化物亦毫無問題。但是還是純度越高越好,最好準備 2N以上,尤以3N以上的原料為佳。 若製造C a。· 〇 8。A 1 S i N 3 : E u。·。2。的話,例如Μ元素、A元素、 B元素的氮化物便分別準備C a 3 N 2 ( 2 N )、A 1 N ( 3 N )、X-ray tube: C ο κ α Tube voltage: 40 k V Tube current: 30 m A Scanning method: 2 0/0 Scanning speed: 0. 0 3 ° / mi η Sampling interval: from 0. 0 1 ° Start angle (20): 10 ° Stop angle (20): 90 ° Furthermore, the related Bragg angle (20) shift phenomenon can be judged because the sample surface irradiated by X-rays is not flat, X The radiographic measurement conditions (especially the scanning speed) are different and shifts occur. Therefore, the range in which the diffraction peaks of the above-mentioned features can appear will also have some offsets, and this phenomenon can be considered to be tolerated. In this specification, in order to suppress this shift phenomenon as much as possible, S i is mixed with a phosphor sample under the condition that the scanning speed is set to 0.3 ° / mi η, and the X-ray measurement is performed. Post-correction of the S i sharp offset to obtain the Bragg angle (2 Θ). 21 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 (Method for Producing the Fluorescent Phosphor of the Present Invention) Here, for the example of the method for producing the red phosphor of the present invention, the composition formula CaAlSiN3: Eu The production of a phosphor represented by (Eu / (Ca + Eu) = 0.020) will be described as an example. Although the raw materials of the respective nitrides of the elements M, A, and B may be commercially available materials, since the higher the purity, the better, it is better to prepare 2N or more, especially 3N or more. In general, the particle diameter of each raw material particle is preferably a fine particle from the viewpoint of promoting the reaction, but the particle size and shape of the phosphor obtained will vary depending on the particle diameter and shape of the raw material. Therefore, it is only necessary to prepare a nitride raw material having an approximate particle size in accordance with the particle size required for the phosphor finally obtained. The raw material of the Z element is preferably a commercially available nitride raw material or a metal monomer, but since the amount of addition is small, there is no problem even if an oxide is used. However, the higher the purity, the better. It is better to prepare 2N or more, especially 3N or more. If C a is manufactured. · 〇 8. A 1 S i N 3: E u. ·. 2. If, for example, nitrides of element M, element A, and element B, Ca 3 N 2 (2 N), A 1 N (3 N),

S i 3 N 4 ( 3 N ),Z元素則準備E u 2 0 3 ( 3 N )。將該等原料依各元素 莫耳比為C a : A 1 : S i : E u = 0 . 9 8 0 : 1 : 1 : 0 . 0 2 0方式,將各原料 混合比分別秤取 Ca3N2:0.980/3mol、 AlN:lmol、 SisN^l / 3 m ο 1、E u 2 0 3 : 0 . 0 2 0 / 2 m ο 1並混合。該秤取、混合事宜,因 為C a 3 Ν 2較易被氧化,因而在非活性環境下的手套箱内進 行操作較為適當。此外,因為各原料元素的氮化物較容易 受水分的影響,因而非活性氣體最好使用經充分去除水分 的氣體。混合方式可為濕式、乾式任一種方式,但是因若 22 312XP/發發發明說明書(補件)/94-06/94105848 200536152 為濕式混合的溶劑使用純水的話,原料便將遭分解,因而 必須選擇適當的有機溶劑。裝置可使用球磨機或研鉢等通 常所使用的裝置。S i 3 N 4 (3 N), and the element Z is prepared as Eu 2 0 3 (3 N). According to the molar ratio of the raw materials, Ca a: A 1: S i: E u = 0.98 0: 1: 1: 0. 0 2 0, and the raw material mixing ratio was weighed to obtain Ca3N2: 0.980 / 3mol, AlN: lmol, SisN ^ l / 3 m ο 1, Eu 2 0 3: 0.0 2 0/2 m ο 1 and mixed. For weighing and mixing, Ca 3 Ν 2 is more easily oxidized, so it is more suitable to operate in a glove box in an inactive environment. In addition, since the nitride of each raw material element is easily affected by moisture, it is preferable to use a gas that has been sufficiently removed from the inert gas. The mixing method can be either wet or dry. However, if 22 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 uses pure water as a solvent for wet mixing, the raw materials will be decomposed. Therefore, an appropriate organic solvent must be selected. As the apparatus, a conventional apparatus such as a ball mill or a mortar can be used.

將混合完成的粉末原料裝入坩鍋中,在氮等非活性環境 中,於1 0 0 0 T:以上(最好1 2 0 0 °C以上,尤以1 5 0 0 °C以上為 佳)且1 7 0 0 °C以下中施行加熱,並保持3 0分鐘以上(最好3 小時)而進行燒成。因為保持時間係燒結溫度越高的話,燒 結將越迅速進行,便可縮短時間。另外,即便燒結溫度偏 低的情況時,藉由長時間保持於該溫度中,仍可獲得標的 發光特性。但是,燒結時間越長將促進粒子成長,造成粒 子尺寸變大,因而最好配合標的粒子尺寸,進行設定燒結 時間。在非活性環境下的燒成中之壓力,最好在0 . 5 Μ P a 以下(尤以0 . 1 Μ P a以下為佳)進行燒成。理由係若在此以上 的壓力進行燒成,粒子間的燒結將過度進行,將不利於燒 成後的粉碎。 再者,坩鍋可使用未含不純物之高純度,如A 1 2 0 3坩鍋、 S i 3 N 4坩鍋、A 1 N坩鍋、矽龍坩鍋、C (碳)坩鍋、B N (氮化硼) 坩鍋等可在非活性環境中使用的坩鍋,但是最好使用BN 坩鍋,因為將可避免源自坩鍋的不純物混入情況。 經燒成完成後,從坩鍋中取出燒成物,使用研鉢、球磨 機等粉碎手段,粉碎成既定平均粒徑,便可獲得組成式 C a。. 9 8。A 1 S i N 3 : E u ◦. 〇 2 〇所示的螢光體。其中,當E u原料使用 E u 2 0 3的情況時,雖少量但是藉由添加氧,組成式便將形成 Ca〇.98〇AlSiO〇.〇3N2.9(i:Eu〇.02(),因為氧量屬於少量,因此並 23 312XP/發發發明說明書(補件)/94-06/94105848 200536152 無特別的問題發生。此外,當欲更加減少氧量的情況時, 只要E u原料使用E u金屬或E u氮化物等的話便可。 (減少本發明螢光體製造時的不純物) 本發明的螢光體係 不純物的碳含有量少於0 . 0 8重量%,不純物的氧含有量 少於3 . 0重量%。最好均滿足不純物碳含有量未滿0 . 0 8重 量%,與不純物氧含有量未滿3 . 0重量%,但是亦可僅滿足 其中任一情況。Put the mixed powder raw materials into the crucible, in a non-reactive environment such as nitrogen, at 100 0 T: above (preferably above 120 ° C, especially above 15 0 ° C) ) And heating is performed at a temperature of 1700 ° C or lower, and it is held for 30 minutes or more (preferably 3 hours) for firing. This is because the higher the sintering temperature, the faster the sintering will be performed, and the time can be shortened. In addition, even when the sintering temperature is low, the target light-emitting characteristics can be obtained by maintaining the temperature for a long time. However, longer sintering time will promote particle growth and increase the particle size. Therefore, it is better to set the sintering time in accordance with the target particle size. The pressure during firing in an inactive environment is preferably fired at 0.5 MPa or less (preferably 0.1 MPa or less). The reason is that if firing is performed at a pressure higher than this, sintering between particles will proceed excessively, which will be disadvantageous for pulverization after firing. Moreover, crucibles can be used with high purity without impurities, such as A 1 2 0 3 crucible, S i 3 N 4 crucible, A 1 N crucible, silicon dragon crucible, C (carbon) crucible, BN (Boron nitride) Crucibles that can be used in an inactive environment, such as crucibles, but BN crucibles are preferred because impurities from the crucible can be avoided. After the firing is completed, the fired product is taken out from the crucible and pulverized to a predetermined average particle size using a pulverizing means such as a mortar or a ball mill to obtain a composition formula C a. . 9 8. A 1 S i N 3: E u ◦. 〇 2 〇 phosphor shown. Among them, when Eu 2 0 3 is used as the Eu raw material, Ca 9.898AlSiO〇.〇3N2.9 (i: Eu〇.02 () Because the amount of oxygen is a small amount, there is no special problem with 23 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152. In addition, when you want to reduce the amount of oxygen more, as long as the Eu material is used E u metal or Eu nitride may be sufficient. (Reduction of impurities in the production of the phosphor of the present invention) The carbon content of the impurities in the fluorescent system of the present invention is less than 0.8% by weight, and the oxygen content of the impurities is Less than 3.0% by weight. It is desirable to satisfy both the carbon content of the impurities less than 0.8% by weight and the oxygen content of the impurities less than 3.0% by weight, but only one of them can be satisfied.

不管是不純物碳含有量少於0 . 0 8重量%的螢光體、或不 純物氧含有量少於3 . 0重量%的螢光體,因為對發光無具作 用的碳與氧不純物含有量較少,因此當依相對強度表示發 光強度時,便可避免發光強度降低2 5〜3 0 %左右,所以可提 升發光效率。 本發明降低不純物的螢光體之製造方法,係將螢光體原 料填充於氮化硼材質的燒成容器内,並在非活性環境中進 行燒成便製得螢光體。針對此經降低不純物螢光體之製造 方法,就以螢光體為CaAlSiN3:Eu(其中,Ei^(Ca + Eu)莫耳 比=0 . 0 1 5的情況)的製造例進行説明。 首先,原料的C a、A 1、S i的氮化物,係分別準備 C a 3 N 2 ( 2 N )、A 1 N ( 3 N )、S i 3 N 4( 3 N )。E u 原料則準備 E u 2 0 3 ( 3 N )。 將該等原料依各元素莫耳比為Ca:Al :Si :Eu = 0. 985: 1 : 1 :0. 0 1 5之 方式進行秤取並混合((C a + E u ) : A 1 : S i : = 1 : 1 : 1 )。該混合可使 用研鉢等普通的混合方法實施,但是最好在氮等非活性環 境下的手套箱内操作較為恰當。 24 312XP/發發發明說明書(補件)/94-06/94105848 200536152Whether it is a phosphor with an impure carbon content of less than 0.8% by weight, or a phosphor with an impure oxygen content of less than 3.0% by weight, because the content of carbon and oxygen impurities that have no effect on light emission is relatively small. When the light emission intensity is expressed in terms of relative intensity, the decrease of the light emission intensity by about 25 to 30% can be avoided, so the light emission efficiency can be improved. The method for manufacturing an impure substance-reducing phosphor according to the present invention is to fill a phosphor raw material in a firing container made of boron nitride and then fire it in an inactive environment to obtain a phosphor. With regard to this manufacturing method for reducing the impurity phosphor, a manufacturing example in which the phosphor is CaAlSiN3: Eu (where Ei ^ (Ca + Eu) Molar ratio = 0.05) is described. First, Ca, A1, and Si nitrides of the raw materials are prepared as C3N2 (2N), A1N (3N), and Si3N4 (3N), respectively. For E u raw materials, E u 2 0 3 (3 N) is prepared. The raw materials are weighed and mixed in such a manner that the molar ratio of each element is Ca: Al: Si: Eu = 0.985: 1: 1: 0. 0 1 5 ((C a + E u): A 1 : S i: = 1: 1: 1). This mixing can be carried out by a common mixing method such as a mortar, but it is preferable to operate in a glove box under an inert environment such as nitrogen. 24 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152

將該混合在非活性環境下的手套箱内進行操作的理 由,可認為若在大氣中執行此操作,將因上述原料的氧化 或分解,造成母體構成元素中所含氧濃度的比率崩潰,除 有降低發光特性的可能性之外,亦將偏離螢光體標的組成 的緣故。此外,因為各原料元素的氮化物容易受水分的影 響,因而非活性氣體最好使用充分去除水分的氣體。當各 原料元素係使用氮化物原料時,為能避免原料的分解,因 而混合方式最好使用乾式混合,亦可採取使用球磨機或研 鉢等通常的乾式混合方法。 將經混合完成的粉末原料,填充於燒成容器的氮化硼製 坩鍋中,例如在壓力0 . 0 5 Μ P a的氮環境等非活性環境中, 依1 5 °C / m i η .的昇溫速度昇溫至1 5 0 0 °C,然後在1 5 0 0 °C中 保持3小時而進行燒成。 在此本發明者等發現當螢光體原料進行燒成的燒成容 器(例如坩鍋),使用如碳製燒成容器進行燒成時,不純物 的碳將從碳製燒成容器混入所燒成的螢光體中,恐將降低 螢光體發光強度。若依照本發明者等的探討,發現若螢光 體中所含碳量達0 . 0 8重量%以上,螢光體的發光強度將開 始降低。此外,本發明者等發現當使用氧化鋁製燒成容器 進行燒成時,不純物的氧將從氧化鋁製燒成容器擴散至所 燒成的螢光體中,恐將造成螢光體發光強度降低。若依照 本發明者等的探討,發現當螢光體中所含氧量達3 . 0重量V 以上時,螢光體的發光強度將開始降低。 所以,本發明者等發現藉由使用氮化硼製燒成容器進行 25 312XP/發發發明說明書(補件)/94-06/94105848 200536152 螢光體的燒成製造,便可製得對發光無具作用的不純物碳 含有量與不純物氧含有量較少之螢光體,可抑制發光強度 降低,便可提升發光體的發光效率。 所以,燒成容器使用氮化硼製燒成容器,經燒成結束 後,便在1小時内從1 5 0 0 °C冷卻至2 0 0 °C ,然後再冷卻至 室溫,之後便使用研鉢、球磨機等粉碎手段粉碎成既定(最 好2 0 // m〜1 μ m )的平均粒徑,便可製得組成式The reason for operating this mixture in a glove box in an inactive environment is that if this operation is performed in the atmosphere, the ratio of the oxygen concentration in the constituent elements of the matrix will collapse due to the oxidation or decomposition of the above raw materials. In addition to the possibility of reducing the light emitting characteristics, the composition of the phosphor target may deviate. In addition, since the nitride of each raw material element is easily affected by moisture, it is preferable to use a gas which sufficiently removes moisture. When a nitride raw material is used for each raw material element, in order to avoid decomposition of the raw material, a dry mixing method is preferably used, and a normal dry mixing method such as a ball mill or mortar can also be adopted. The powdered raw materials after mixing are filled in a crucible made of boron nitride in a firing container, for example, in a non-reactive environment such as a nitrogen environment with a pressure of 0.05 MPa, at 15 ° C / mi η. The temperature rise rate was increased to 15 0 ° C, and then held at 15 0 ° C for 3 hours to perform firing. Here, the present inventors have found that when a firing container (for example, a crucible) for firing phosphor raw materials is fired using, for example, a carbon firing container, impure carbon is mixed from the carbon firing container into the firing. The resulting phosphor may reduce the luminous intensity of the phosphor. According to the investigation by the present inventors, it has been found that if the amount of carbon contained in the phosphor reaches 0.8 wt% or more, the luminous intensity of the phosphor will start to decrease. In addition, the present inventors have discovered that when an alumina firing container is used for firing, oxygen from impurities is diffused from the alumina firing container to the fired phosphor, which may cause the phosphor to emit light. reduce. According to discussions by the inventors, it was found that when the amount of oxygen contained in the phosphor reaches 3.0 weight V or more, the luminous intensity of the phosphor starts to decrease. Therefore, the present inventors have found that by using a firing container made of boron nitride to perform 25 312XP / Fafa Invention Instructions (Supplement) / 94-06 / 94105848 200536152, the firing of the phosphor can be obtained. Phosphors with less effective carbon content of impurities and less oxygen content of impurities can suppress the decrease in luminous intensity and can improve the luminous efficiency of the luminous body. Therefore, the firing container is a boron nitride firing container. After the firing is completed, it is cooled from 15 0 ° C to 200 ° C in 1 hour, and then cooled to room temperature, and then used. Grinding means such as mortar and ball mill are pulverized to a predetermined (preferably 2 0 // m ~ 1 μm) average particle size, and the composition formula can be obtained.

Ca〇.985SiAlN3:Eu〇.〇i5 的螢光體。Ca〇.985SiAlN3: Eu〇.〇i5 phosphor.

當E u / ( C a + E u )莫耳比設定値有變動的情況時,亦是藉由 使各原料裝填時的調配量配合既定組成式,並利用同樣的 製造方法,便可製得既定組成的螢光體。所獲得螢光體均 屬於碳含有量少於〇 . 〇 8重量%、氧含有量少於3 . 0重量% 的螢光體。 本發明的螢光體係在考慮塗佈或填充容易性的情況下 而形成粉狀體,此情況下,該螢光體粉體的平均粒徑最好 在2 0 // m以下。此理由係螢光體粉體的發光主要係發生於 粒子表面,因而若將平均粒徑設定在2 0 μ m以下,便可確 保粉體平均單位重量的表面積,將可避免輝度降低。而且, 若將該粉體形成糊狀,在對發光體元件等施行塗佈時,亦 可提高該粉體的密度,就此觀點而言,亦可避免輝度降低。 此外,依本發明者等的探討,雖詳細理由並未明確,但是 就從螢光體粉末的發光效率觀點,得知平均粒徑亦最好大 於1 W m。根據上述,本發明螢光體粉體的平均粒徑最好在 1 // ηι以上、2 0 β m以下。 26 312XP/發發發明說明書(補件)/94-06/94105848 200536152 形成粉末狀的本發明螢光體,藉由週知方法而組合發光 部(特別係在發光波長區域3 0 0〜5 5 0 n m中均會發光的發光 部),便在該發光部所發光的寬範圍波長區域光中具有激發 帶並發光,因而便可獲得發出可見光或白色光的高發光效 率光源。特別係利用週知方法組合發光部為發光波長區域 3 0 0〜5 5 0 n m中均可發光的L E D,便可獲得發出可見光或白色 光的高發光效率光源或L E D。When the setting of E u / (C a + E u) is different, it can also be obtained by using the same composition method with the formulation amount of each raw material when filling and using the same manufacturing method. A phosphor of a predetermined composition. The phosphors obtained are all phosphors having a carbon content of less than 0.8% by weight and an oxygen content of less than 3.0% by weight. The fluorescent system of the present invention is formed into a powder in consideration of the ease of coating or filling. In this case, the average particle diameter of the fluorescent powder is preferably 20 / m or less. This reason is that the luminescence of the phosphor powder mainly occurs on the particle surface. Therefore, if the average particle size is set to less than 20 μm, the surface area per unit weight of the powder can be ensured, and the decrease in brightness can be avoided. Furthermore, if the powder is formed into a paste, the density of the powder can also be increased when coating the light-emitting element or the like, and from this viewpoint, a decrease in brightness can also be avoided. In addition, according to the investigation by the present inventors, although the detailed reason is not clear, from the viewpoint of the luminous efficiency of the phosphor powder, it is known that the average particle diameter is preferably larger than 1 W m. Based on the above, the average particle diameter of the phosphor powder of the present invention is preferably 1 // ηm or more and 20 β m or less. 26 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 The phosphor of the present invention which is formed into a powder form is combined with a light-emitting portion by a well-known method (particularly in the light-emitting wavelength region 3 0 0 ~ 5 5 A light-emitting portion that emits light at 0 nm) has an excitation band and emits light in a wide-range wavelength region of light emitted by the light-emitting portion, so that a high light-emitting efficiency light source that emits visible light or white light can be obtained. In particular, a well-known method is used in which the light-emitting portion is combined with LEDs that can emit light in a wavelength range of 300 to 5500 nm, and a high-efficiency light source or LED that emits visible light or white light can be obtained.

所以,可將此光源(L E D )使用為顯示裝置或螢光燈等照 明裝置的各種多樣化光源。 (實施例) 以下,根據實施例更具體的說明本發明。 (實施例1 ) 準備市售的 Ca3N2(2N)、 A1N(3N)、 Si3N4(3N)、 Eu2〇3(3N), 並依各元素莫耳比為Ca:Al:Si:Eu=0.985:1:1:0.015之方 式秤取各原料,並在氮環境下的手套箱中使用研鉢進行混 合。將所混合的粉末原料,在壓力0 . 0 5 Μ P a的氮環境中, 依1 5 °C / m i η的昇溫速度昇溫至1 5 0 0 °C ,經在1 5 0 0 °C中保 持3小時間而進行燒成之後,再於1小時内從1 5 0 0 °C冷卻 至2 0 0 °C ,便獲得組成式C a。. 9 8 5 S i A 1 N 3 : E u 〇.。! 5的螢光體。 所獲得螢光體粉末的分析結果如表1所示。 所獲得螢光體的平均粒徑(D 5 0 )為4 . 6 5 // m,比表面積為 1 . 1 3 m2 / g,不純物的氧含2 . 2 °/〇。 27 312XP/發發發明說明書(補件)/94-06/94105848 200536152 [表1 ]Therefore, this light source (LED) can be used as various light sources for lighting devices such as display devices and fluorescent lamps. (Examples) Hereinafter, the present invention will be described more specifically based on examples. (Example 1) Commercially available Ca3N2 (2N), A1N (3N), Si3N4 (3N), Eu2〇3 (3N), and the molar ratio of each element was Ca: Al: Si: Eu = 0.985: 1 : 1: 0.015 to weigh each raw material, and use a mortar to mix in a glove box under a nitrogen environment. The mixed powder raw materials were heated to 15 0 ° C at a temperature increase rate of 15 ° C / mi η in a nitrogen environment at a pressure of 0.05 MPa, and were heated at 15 0 ° C. After firing for 3 hours, the composition was cooled from 15 ° C. to 200 ° C. within one hour to obtain the composition formula C a. . 9 8 5 S i A 1 N 3: E u 〇. !! 5 phosphors. Table 1 shows the analysis results of the obtained phosphor powder. The average particle diameter (D 50) of the obtained phosphor was 4.6 5 // m, the specific surface area was 1.1 3 m 2 / g, and the oxygen content of the impurities was 2.2 ° / 〇. 27 312XP / Fafa Invention Specification (Supplement) / 94-06 / 94105848 200536152 [Table 1]

Ca(°/〇) Al(%) Si(%) N(°/〇) Eu(°/〇) 〇(%) 其他 平均粒徑(D50) 比表面積 Ca〇. 985AIS1N3 : Eu〇. 015 27.3 20.5 19.2 29.2 1.46 2.2 0. 1 4. 65 //m 1. 13m2/g 其次,測量本發明螢光體的發光光譜與激發光譜。針對 該測量結果,參照圖7、圖8進行説明。其中,圖7、圖8 均是縱轴為本發明螢光體的發光強度,橫軸為光波長。Ca (° / 〇) Al (%) Si (%) N (° / 〇) Eu (° / 〇) 〇 (%) Other average particle size (D50) Specific surface area Ca 985AIS1N3: Eu 0.15 27.3 20.5 19.2 29.2 1.46 2.2 0. 1 4. 65 // m 1. 13m2 / g Next, measure the emission spectrum and excitation spectrum of the phosphor of the present invention. The measurement results will be described with reference to Figs. 7 and 8. 7 and 8 are the light emission intensities of the phosphors of the present invention on the vertical axis and the wavelength of light.

首先,使用圖7針對本發明螢光體的發光光譜進行説 明。所謂「發光光譜」係指當將某波長的光或能量照射於 物體之際,由物體所釋放出的光譜,圖7所示係當對本發 明螢光體照射4 5 0 n m單色光時,從螢光體發光的波長光譜。 由圖7中明顯得知,本螢光體係將在5 5 0 n m起至8 0 0 n m 的寬波長區域中發光,且在656nm處為最高發光。此外, 目視便可確認到紅色發光色。 其次,使用圖8針對本發明螢光體的激發光譜進行説 明。所謂「激發光譜」係指使用各種波長的單色光,激發 被測量對象的螢光體,並測量螢光體發光的一定波長發光 強度,而測量此發光強度的激發波長依存性。在本測量中, 將2 5 0 n m起至5 7 0 η ηι的單色光照射於本發明螢光體,並測 量螢光體發光波長6 5 6 n m時發光強度的激發依存性。 由圖8中明顯得知,本螢光體的激發光譜係從3 0 0 n m附 近起至6 0 0 η η]的寬廣範圍,並在激發帶3 0 0 n m附近起至 6 0 0 n m的廣範圍中,顯示出高紅色發光。 (實施例2 ) 28 312XP/發明說明書(補件)/94-06/94 ] 05848 200536152 實施例2中,使用具有C a ,,, S i A 1 N 3 : E u z組成式的本發明 螢光體,測量依活化材Z元素濃度所產生的發光強度。 在測量試料的製造方面,活化劑Eu濃度係依與Ca間的 關係為m + z = 1之方式,調整C a與E u的添加量。 針對該測量結果,參照圖9進行説明。其中,圖9係縱 軸為本發明螢光體的發光強度,橫軸為Ca與Eu的調配比 Eu/(Eu + Ca)値。此外,發光強度方面係將Eu/(Eu + Ca) = 0 . 0 1 5時的發光強度設為1 0 0 %。然後,圖示E u Μ E u + C a )値 φ 在0 . 0 0 1 5〜0 . 0 6間調整的結果。此外,激發係使用4 5 0 n m 波長的光。 由圖9的結果得知,開始時發光強度將隨E u / ( E u + C a ) 値的增加而上昇,但是在0 . 0 1 5附近出現尖♦,然後發光 強度便逐漸下降。此現象可判斷係是因為在低於0 . 〇 1 5的 部分處活化劑元素將嫌不足,而在高於0 . 0 1 5的部分處則 將因活化劑元素而出現濃度消光情況的緣故。First, the emission spectrum of the phosphor of the present invention will be described with reference to Fig. 7. The so-called "luminous spectrum" refers to the spectrum released by an object when light or energy of a certain wavelength is irradiated to the object. As shown in Fig. 7, when the phosphor of the present invention is irradiated with monochromatic light of 450 nm, The wavelength spectrum of light emitted from a phosphor. It is obvious from FIG. 7 that the present fluorescent system will emit light in a wide wavelength region from 550 nm to 800 nm, and the highest emission is at 656 nm. In addition, the color of red light emission was visually recognized. Next, the excitation spectrum of the phosphor of the present invention will be described using Fig. 8. The "excitation spectrum" refers to the use of monochromatic light of various wavelengths to excite the phosphor of the object to be measured, and to measure the luminous intensity of a certain wavelength of light emitted by the phosphor, and the excitation wavelength dependence of this luminous intensity is measured. In this measurement, monochromatic light ranging from 250 nm to 5700 nm was irradiated to the phosphor of the present invention, and the excitation dependence of the luminous intensity at the wavelength of the phosphor's emission wavelength of 6 56 nm was measured. It is obvious from FIG. 8 that the excitation spectrum of the present phosphor is a wide range from around 300 nm to 6 0 η η], and the excitation band from around 300 nm to 600 nm In a wide range, high red light emission is displayed. (Example 2) 28 312XP / Invention Specification (Supplement) / 94-06 / 94] 05848 200536152 In Example 2, the fluorescent lamp of the present invention having a C a ,,, S i A 1 N 3: E uz composition formula is used. Light body, measuring the luminous intensity produced by the Z element concentration of the active material. For the production of measurement samples, the concentration of activator Eu was adjusted so that the relationship between Ca and m was z + 1, and the amounts of Ca and Eu were adjusted. This measurement result will be described with reference to FIG. 9. Among them, the vertical axis of Fig. 9 is the luminous intensity of the phosphor of the present invention, and the horizontal axis is the blending ratio of Ca and Eu Eu / (Eu + Ca) 値. In addition, in terms of light emission intensity, the light emission intensity when Eu / (Eu + Ca) = 0.015 was set to 100%. Then, the results of the adjustment of Eu μM E u + Ca) 値 φ between 0. 0 0 1 5 to 0. 06 are shown. The excitation system uses light having a wavelength of 450 nm. It is known from the results of FIG. 9 that at the beginning, the luminous intensity will increase with the increase of Eu / (Eu + Ca) 値, but a sharp point appears around 0.015, and then the luminous intensity gradually decreases. This phenomenon can be judged because the activator element will be insufficient in the part below 0. 015, and the concentration extinction will occur due to the activator element in the part above 0. 15 .

再者,在該發光強度測量之同時,亦測量發光色度 (X, Y )。結果如表2所示。由表2結果得知,確認到隨 E u / ( E u + C a )値的增加,尖峰波長亦將朝長波長側位移。 [表2] E X : 4 5 0 n mIn addition to this luminous intensity measurement, the luminous chromaticity (X, Y) is also measured. The results are shown in Table 2. From the results in Table 2, it was confirmed that as the Eu / (Eu + Ca) 値 increases, the peak wavelength also shifts toward the long wavelength side. [Table 2] E X: 4 5 0 n m

Eu濃度 尖峰強度 尖峰波長 X y Ca〇. 9975 A 1 S i N3 : Eu〇. 0015 0. 0015 28. 8% 632. 7 0. 608 0. 384 Ca〇. 9925 A1S i N3: Euo. 0075 0.0075 75. 5°/〇 644.3 0.651 0. 346 Ca〇.985AlSiN3: Euo.ois 0.0150 100. 0% 651. 3 0.671 0. 327 Ca〇. 97A1S i N3: Eu〇. 03 0.0300 77. 0°/〇 660. 0 0. 683 0.315 Ca〇. 丨A1S i N3: Eu〇_ og 0. 0600 54. l°/〇 670. 2 0. 691 0. 306 29 312XP/發明說明書(補件)/94-06/94105848 200536152 (實施例3 ) 在發光部為發出波長4 0 5 n m紫外光的氮化物半導體L E D 上,塗佈依既定量混合的本發明所獲得螢光體、市售藍色 螢光體(BAM:Eu)、綠色螢光體(ZnS:Cu,Al),並使該紫外光 LED發光。依此各螢光體便以LED所發出的光為激發源進 行發光,利用各螢光體發光色的混色,便可獲得可觀看到 白色的LED。此外,藉由使各螢光體混合比產生變化,便 可獲得各種色調的LED。Eu concentration spike intensity peak wavelength X y Ca0. 9975 A 1 S i N3: Eu0. 0015 0. 0015 28. 8% 632. 7 0. 608 0. 384 Ca0. 9925 A1S i N3: Euo. 0075 0.0075 75.5 ° / 〇644.3 0.651 0. 346 Ca〇.985AlSiN3: Euo.ois 0.0150 100. 0% 651. 3 0.671 0. 327 Ca〇. 97A1S i N3: Eu〇. 03 0.0300 77. 0 ° / 〇660 0 0. 683 0.315 Ca〇. 丨 A1S i N3: Eu〇_ og 0. 0600 54. l ° / 〇670. 2 0. 691 0. 306 29 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152 (Example 3) On a nitride semiconductor LED whose light-emitting part emits ultraviolet light with a wavelength of 40.5 nm, a phosphor obtained by mixing the present invention and a commercially available blue phosphor (BAM) : Eu), a green phosphor (ZnS: Cu, Al), and causes the ultraviolet LED to emit light. In this way, each phosphor emits light using the light emitted by the LED as an excitation source, and a white LED can be obtained by mixing the colors of the phosphors' emission colors. In addition, by changing the mixing ratio of the phosphors, LEDs of various colors can be obtained.

再者,在發光部為具有氮化物半導體的藍色光LED上, 塗佈著本發明所獲得螢光體及市售黃色螢光體(Y A G .· C e ), 並使該藍色光LED發光。依此的話,各螢光體便將利用來 自L E D的光而發光,可獲得目視色溫度較低的偏紅色L E D。 (實施例4 ) 在實施例4中,就本發明螢光體與專利文獻4、5所揭 CazSisNsiEu螢光體進行比較。 再者,本實施例所使用的C a 2 S i 5 N 8 : E u螢光體,係準備 C a 3 N 2、S i 3 N 4、E u 2 0 3的2 N或3 N試劑為原料,分別依C a、 S i、E u為1 . 9 7 : 5 : 0 . 0 3莫耳比方式進行秤取,並在氮環境 下於手套箱中進行研鉢混合。將所混合的粉末原料在壓力 0 . 0 5 Μ P a氮環境中,於1 5 0 0 °C中施行3小時燒成,再施行 如同實施例1的冷卻粉碎’而製得組成式C a 1 . 9 7 S i 5 N 8 : E U 0 . 0 3 的螢光體。 將實施例1所製得本發明組成式C a。. 9 8 5 S i A 1 N 3 : E u。. ◦丨5 螢光體與該組成式C a I . 9 7 S i 5 N 8 : E U 0 . 0 3螢光體的分析結果, 30 312XP/發明說明書(補件)/94-06/94105848 200536152 合記於表 3中。 由表3結果得知,所製得二螢光體中以不純物含有的氧 與其他元素含有量為相同程度,且二螢光體的比表面積亦 為相同程度。Furthermore, a blue LED having a nitride semiconductor as a light emitting portion is coated with the phosphor obtained in the present invention and a commercially available yellow phosphor (Y A G.. C e), and the blue LED is caused to emit light. As a result, each phosphor will emit light using the light from the LED, and a reddish red LED with a low visual color temperature can be obtained. (Example 4) In Example 4, the phosphor of the present invention was compared with the CazSisNsiEu phosphor disclosed in Patent Documents 4 and 5. In addition, the Ca 2 S i 5 N 8: E u phosphor used in this example is a 2 N or 3 N reagent for Ca 3 N 2, Si 3 N 4, and Eu 2 0 3 As raw materials, the scales were weighed according to the methods of Ca, Si, and Eu at 1.97: 5: 0.03, and mixed in a mortar in a glove box under a nitrogen environment. The mixed powdered raw materials were calcined in a nitrogen atmosphere at a pressure of 0.05 MPa for 3 hours at 1 500 ° C, and then cooled and crushed as in Example 1 to obtain a composition formula C a 1. 9 7 S i 5 N 8: EU 0. 0 3 phosphor. The composition formula C a of the present invention obtained in Example 1 is obtained. . 9 8 5 S i A 1 N 3: E u. ◦ 丨 5 phosphors and the composition formula C a. 9 7 S i 5 N 8: EU 0. 0 3 Analysis results of phosphors, 30 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152 is summarized in Table 3. From the results in Table 3, it can be seen that the impurities contained in the produced two phosphors have the same levels of oxygen and other elements, and the specific surface area of the two phosphors is also the same.

31 312XP/發明說明書(補件)/94-06/94105848 200536152 [表3 ]31 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152 [Table 3]

Ca(°/〇) Al(°/〇) Si(°/〇) N(°/〇) Eu(%) 〇(%) 其他 平均粒徑(D50) 比表面積 Ca〇.985AlSiN3: Eu〇.〇is 27.3 20. 5 19. 2 29.2 1.46 2.2 0. 1 4. 65 // m 1. 13 m2/g Cai. 97S i 5N8: Eu〇. 03 22.3 0· 3 39. 6 34.2 1. 34 2. 1 0.2 4. 77 // m 1. 11 m2/g 其次,針對上述二螢光體的發光光譜,依如同實施例1之方 式進行測量並比較。其中,所照射的光係使用4 6 0 n m單色光。 結果如圖1 0與表4所示。 圖1 0所示係與圖7為相同的圖形,本發明螢光體的發光光 譜以實線表示,組成式C a 1 . 9 7 S i 5 Ν 8 : E U G . 0 3螢光體的發光光譜以Ca (° / 〇) Al (° / 〇) Si (° / 〇) N (° / 〇) Eu (%) 〇 (%) Other average particle size (D50) Specific surface area Ca〇.985AlSiN3: Eu〇.〇 is 27.3 20. 5 19. 2 29.2 1.46 2.2 0. 1 4. 65 // m 1. 13 m2 / g Cai. 97S i 5N8: Eu〇. 03 22.3 0 · 3 39. 6 34.2 1. 34 2. 1 0.2 4. 77 // m 1. 11 m2 / g Secondly, the emission spectra of the two phosphors are measured and compared in the same manner as in Example 1. Among them, the irradiated light is a monochromatic light of 460 nm. The results are shown in Figure 10 and Table 4. The diagram shown in FIG. 10 is the same as that in FIG. 7. The light emission spectrum of the phosphor of the present invention is represented by a solid line, and the composition formula is C a 1. 9 7 S i 5 Ν 8: EUG. 0 3 Spectrum to

虛線表不。 [表4 ] 激發波長 尖峰強度 尖峰波長 色度 X y Ca〇.985AlSiN3: EU0.015 460nm 137.4% 656. 2 0. 671 0. 327 Cai. 9?Si δΝβ: Eu〇. 03 460nm 100. 0% 609· 2 0. 593 0.405 312XP/發明說明書(補件)/94-06/94105848 32The dotted line indicates. [Table 4] Excitation wavelength spike intensity Peak wavelength chromaticity X y Ca〇.985AlSiN3: EU0.015 460nm 137.4% 656. 2 0. 671 0. 327 Cai. 9? Si δNβ: Eu〇. 03 460nm 100. 0% 609 · 2 0. 593 0.405 312XP / Invention Specification (Supplement) / 94-06 / 94105848 32

200536152 田回I ϋ與表4結果得知,本發明螢光體在與組成式 C a 1,9 7 S 1 5 Ν 8 : E u。.。3螢光體進行比較之後,尖峰強度高出約 4 〇 % ’屬於非常高效率的螢光體。尤其更佳的是組成式 Cai 97Sl5N8:Eu°螢光體在610nm附近具有尖峰波長且目視為橙色, 相對於此,因為本發明螢光體在65 6nm附近具有尖峰波長,因此將 更接近紅色。所以,當組合其他螢光體而製作發出白色光 的LED時,將可減少紅色系螢光體的混合比率。 (實施例5 ) 準備市售 Ca3N2(2N)、A1N(3N)、SiK3N)、Eu2〇3(3N), 並依 Ca3N2:〇.985/3mol 、 AlN:lmol 、 Si3N4:l/3mol 、 E u 2 03 : 〇 . 〇 i 5 / 2 m o 1方式,分別秤取各原料之後,在氮環境 下的手套箱内使用研鉢進行混合。將所混合的粉末原料裝 入掛銷中,並在壓力〇.〇5MPa的氮環境中於16〇〇。〇下保持 3小時而進行燒成,然後在1小時内從16〇〇。〇冷卻至20〇t, 便獲付含有組成(^。.985人18丨0。.。23~2.985:£11。.。15。所示生成相的營光體。200536152 Tian Hui I ϋ and the results in Table 4 show that the phosphor of the present invention has a compositional formula C a 1,9 7 S 1 5 Ν 8: E u. .. 3 After comparing the phosphors, the peak intensity is about 40% higher, which is a very efficient phosphor. Particularly preferred is that the compositional Cai 97Sl5N8: Eu ° phosphor has a peak wavelength near 610 nm and is considered orange. In contrast, since the phosphor of the present invention has a peak wavelength near 65 6 nm, it will be closer to red. Therefore, when other LEDs are combined to produce white LEDs, the mixing ratio of red phosphors can be reduced. (Example 5) Commercially available Ca3N2 (2N), A1N (3N), SiK3N), Eu2〇3 (3N), and Ca3N2: 0.985 / 3mol, AlN: 1mol, Si3N4: 1 / 3mol, Eu 2 03: 〇. 〇i 5/2 mo 1 method, after weighing each raw material separately, use a mortar to mix in a glove box under a nitrogen environment. The mixed powder raw materials were charged into a hanging pin and subjected to a pressure of 1,600 in a nitrogen atmosphere at a pressure of 0.05 MPa. It was calcined at 3 ° C for 3 hours, and then changed from 16,000 in 1 hour. 〇Cooling to 20 〇t, will be paid to contain the composition (^ .. 985 people 18 丨 0 .. 23 ~ 2.985: £ 11... 15 as shown in the formation phase of the photogenic body.

所獲得螢光體試料的粒徑為3〜4 // m。(下述實施例6〜1 〇中 亦是所獲得螢光體粒徑為3〜4 // m ) 對所獲得螢光體照射波長4 6 0 n in激發光源,並測量發光 特性。發光強度係依後述實施例6螢光體的發光強度規定 為1 0 0 % ;輝度係根據J I S Z 8 7 0 1所規範的X γ z表色系算出 方法求取Y値,並將後述實施例6螢光體的輝度設定為 1 0 0 % ;色度係根據J I S Z 8 7 0 1所規範算出方法求取色度 X,y。此外’螢光體粒子試料中所含氧、氮濃度(〇 / N ),係 使用L E C 0公司製氧、氮同時分析裝置(τ C - 4 3 6 )進行測量, 33 312XP/發明說明書(補件)/94-06/94105848 200536152 其他元素濃度係使用I C P所測得數値。 該螢光體的原料組成式、各元素的濃度分析結果、發光 特性的測量結果,如表5所示。 其次,將該螢光體試料的粉末X射線繞射圖案與J C P D S 卡的尖峰比較結果,表示於圖1 ( A )、( B )中。The particle size of the obtained phosphor sample was 3 to 4 // m. (The particle diameters of the obtained phosphors are also 3 to 4 // m in the following Examples 6 to 10.) The obtained phosphors were irradiated with an excitation light source at a wavelength of 460 n in, and the emission characteristics were measured. The luminous intensity is defined as 100% according to the luminous intensity of the phosphor in Example 6 described later; the luminous intensity is determined according to the calculation method of the X γ z color system regulated by JISZ 8 701, and Y 値 is calculated. The brightness of the 6 phosphor is set to 100%; the chromaticity is obtained by calculating the chromaticity X, y according to the calculation method specified in JISZ 787. In addition, the concentration of oxygen and nitrogen (0 / N) in the phosphor particle sample was measured using an oxygen and nitrogen simultaneous analysis device (τ C-4 3 6) made by LEC 0, 33 312XP / Invention Specification (Supplementary Pieces) / 94-06 / 94105848 200536152 The concentration of other elements is measured using ICP. Table 5 shows the raw material composition formula of this phosphor, the results of the concentration analysis of each element, and the results of the measurement of the luminescence characteristics. Next, the results of comparing the powder X-ray diffraction pattern of this phosphor sample with the peaks of the J C P D S card are shown in FIGS. 1 (A) and (B).

由圖1 ( A )、( B )得知實施例5螢光體的結晶結構係如實 施形態中所說明般,J C P D S卡所記載的C a A 1 S i N 3結晶與X 射線繞射圖案的主要尖峰整體圖案相類似。但是,判斷二 者結晶結構將因結構中所有氧的量差及部分Ca將被取代 為Eu等原因,而造成具有結晶面間隔不同的結晶結構。尤 其是可判斷本發明螢光體的生成相,亦具有如同J C P D S卡 中所記載CaAlSiN3結晶相同的斜方晶。 再者,相關實施例5螢光體生成相的X射線繞射圖案中 之主要尖峰,亦是如同實施形態中所説明般,在布拉格角 (20 )為 36.5。〜37.5 °、40.9。〜41.9。、41. 9。〜42.9。、 5 6 · 3 0 〜5 7 · 3 ϋ、6 6 · 0。〜6 7 · 0 0、7 5 · 8 0 〜7 6 . 8 0 及 8 1 · 0 0 〜8 3 · 0 0 範圍内具有特徵的尖峰,尤其是在3 6 . 5 °〜3 7 . 5 °、 4 1 . 9 °〜4 2 . 9 °範圍内的尖峰屬於強度特強的特徵尖峰,在 5 6 . 3 °〜5 7 . 3 °範圍内的尖峰則僅次於該等的特徵尖峰。該等 尖峰均屬於當將該X射線繞射圖案中強度最強繞射尖峰的 相對強度設為1 0 0 %時,具有1 0 %以上相對強度的繞射尖峰。 再者,該等尖峰若從該繞射圖案半值寬觀點而言,將獲 得半值寬均在0 . 2 5 °以下的尖銳繞射尖峰。該尖銳繞射尖 +係表不生成相並非屬非晶質結構’而為具有結晶性優越 34 312ΧΡ/發明說明書(補件)/94-06/94105848 200536152 的結構。 經氧·氮濃度的測量結果,該螢光體試料中的氧濃度、 氮濃度分析値為2 . 4 w t %、2 8 . 5 w t %。另外,從該螢光體試 料的原料裝填量所算出的氧濃度為0 . 3 w t %,氮濃度則為 3 0 w t % 〇 若將二者進行比較,相關氧濃度相對於生成相中的氧濃 度0 . 3 w t °/〇,在試料中將含有相當多的氧。此多出的約2 w t % 氧,可判斷係屬於在開始時便附著於原料表面的氧、在燒 φ 入時或燒成時因原料表面氧化而混入的氧及燒成後吸附於 營光體試料表面的氧!,可認為係另存在生成相結構以外的 氧。 另一方面,相關氮濃度相對於生成相中的氮濃度28. 5wt°/〇 ,在試料中幾乎含同量的氮(3 0 w t % )。由此結果可判斷在生 成相結構以外幾乎沒有另外存在的氮。 再者,測量表示所獲得螢光體試料之激發帶的激發光譜 及表示發光特性的發光光譜,結果如圖2、圖3所示。From Figs. 1 (A) and (B), it is known that the crystal structure of the phosphor in Example 5 is as described in the embodiment, and the C a A 1 S i N 3 crystal and X-ray diffraction pattern described in the JCPDS card are described. The overall pattern of the main spikes is similar. However, it is judged that the crystal structure of the two will have a crystal structure with a different crystal plane interval due to the difference in the amount of all the oxygen in the structure and a part of Ca will be replaced with Eu. In particular, it can be judged that the formation phase of the phosphor of the present invention also has the same orthorhombic crystal as the CaAlSiN3 crystal described in the J C P D S card. In addition, the main peak in the X-ray diffraction pattern of the phosphor-generating phase in the related example 5 is also as described in the embodiment, and the Bragg angle (20) is 36.5. ~ 37.5 °, 40.9. ~ 41.9. , 41.9. ~ 42.9. , 5 6 · 3 0 to 5 7 · 3 ϋ, 6 6 · 0. ~ 6 7 · 0 0, 7 5 · 8 0 ~ 7 6. 8 0 and 8 1 · 0 0 ~ 8 3 · 0 0 have characteristic spikes, especially at 3 6 .5 ° ~ 3 7. 5 The peaks in the range of °, 41.9 ° to 42.9 ° are characteristic peaks with extremely strong intensity, and the peaks in the range of 56.3 ° to 57.3 ° are second only to the characteristic peaks. . These spikes belong to diffraction spikes having a relative intensity of more than 10% when the relative intensity of the strongest diffraction peak in the X-ray diffraction pattern is set to 100%. Furthermore, from the viewpoint of the half-value width of the diffraction pattern, the sharp peaks will obtain sharp diffraction peaks with half-value widths below 0.2 °. The sharp diffraction tip + indicates that the non-formation phase is not an amorphous structure 'but has a structure with superior crystallinity 34 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152. As a result of measuring the oxygen and nitrogen concentration, the analysis of oxygen concentration and nitrogen concentration in the phosphor sample was 2.4 wt% and 28.5 wt%. In addition, the oxygen concentration calculated from the raw material loading amount of the phosphor sample was 0.3 wt%, and the nitrogen concentration was 30 wt%. If the two are compared, the relevant oxygen concentration is relative to the oxygen in the generated phase. The concentration of 0.3 wt ° / 〇, will contain considerable oxygen in the sample. The extra about 2 wt% of oxygen can be judged to be the oxygen that adheres to the surface of the raw material at the beginning, the oxygen mixed in due to the oxidation of the surface of the raw material during firing or firing, and the adsorbed to Yingguang after firing Oxygen on the sample surface! It can be considered that there exists oxygen other than the generated phase structure. On the other hand, the relevant nitrogen concentration was 28.5 wt ° / 0 with respect to the nitrogen concentration in the formation phase, and the sample contained almost the same amount of nitrogen (30 wt%). From this result, it can be judged that there is almost no additional nitrogen other than the generated phase structure. In addition, the excitation spectrum showing the excitation band of the obtained phosphor sample and the emission spectrum showing the emission characteristics were measured. The results are shown in Figs. 2 and 3.

圖2所示係縱軸為相對強度,橫軸為激發波長(n m ),將 依波長6 5 6 . 2 n m激發波長所測得激發光譜,依實線進行描 點的圖形。 由圖2測量結果得知,實施例5螢光體試料的激發光譜 係橫跨存在於2 5 0 n m〜6 0 0 n in的寬範圍中,判斷可充分利用 波長3 0 0 n in〜5 5 0 n in紫外光〜可見光的寬範圍光。 圖3所示係縱軸為相對強度,橫軸為發光波長(n m ),將 依波長4 6 0 n in激發光進行激發時的發光光譜,依實線進行 35 312XP/發明說明書(補件)/94-06/94105848 200536152 描點的圖形。 由圖3的測量結果得知,實施例5螢光體試料的發光光 譜係在6 5 4 n m具有尖峰値,具有較寬的半值寬。 (實施例6 ) 將所混合的原料裝入坩鍋中,並在氮環境中於1 5 0 0 °C下 保持3小時而進行燒成之後,於1小時内從1 5 0 0 °C冷卻至 200 °C,除獲得含有組成 Ca〇.985AlSi〇Q.()23N2.985:Eu〇.015()所示 生成相的螢光體之外,亦將如同實施例5獲得實施例6的 • 螢光體。 將該螢光體試料的原料組成式、氧·氮濃度、發光特性 的測量結果列表於表5中,並將所獲得螢光體的粉末X射 線繞射圖案,依粗實線描繪於圖4 - A〜G中。The vertical axis of Fig. 2 is the relative intensity, and the horizontal axis is the excitation wavelength (n m). The excitation spectrum measured according to the excitation wavelength of 65.6.2 n m will be plotted according to the solid line. From the measurement results in FIG. 2, it is known that the excitation spectrum of the phosphor sample of Example 5 spans a wide range of 250 nm to 6 0 n in, and it is determined that the wavelength of 3 0 0 n in to 5 can be fully utilized. 50 n in ultraviolet light to a wide range of visible light. The vertical axis of the system shown in Figure 3 is the relative intensity, and the horizontal axis is the emission wavelength (nm). The emission spectrum when the excitation light is excited at a wavelength of 4 60 n in, is 35 312XP / Invention Specification (Supplement) according to the solid line. / 94-06 / 94105848 200536152 The drawing of points. It is known from the measurement results in Fig. 3 that the emission spectrum of the phosphor sample of Example 5 has a peak ridge at 6 5 4 n m and a wide half-value width. (Example 6) The mixed raw materials were charged into a crucible, and held at 150 ° C for 3 hours in a nitrogen environment to perform firing, and then cooled from 15,000 ° C in 1 hour. At 200 ° C, except that phosphors containing the phase represented by the composition Ca.985AlSi〇Q. () 23N2.985: Eu.015 () were obtained, the phosphors of Example 6 were obtained as in Example 5. • Phosphor. Table 5 lists the measurement results of the raw material composition formula, the oxygen and nitrogen concentration, and the luminous characteristics of the phosphor sample, and the powder X-ray diffraction pattern of the obtained phosphor is plotted in FIG. 4 by a thick solid line. -A to G.

圖4 - A所示係布拉格角(2 0 )橫跨0 °〜9 0 °全範圍的X射 線繞射圖案,圖4 - B〜G所示係該布拉格角的特徵部分放大 圖。而圖4-B所示係35°〜40°,圖4-C係40°〜45°,圖4-D 係 5 5 ° 〜6 0 °,圖 4 - E 係 6 5 ϋ 〜7 0 °,圖 4 - F 係 7 5 ° 〜8 0 °,圖 4 - G 係8 0 °〜8 5 °範圍。此外,為求説明上的方便,在圖4 _ Α〜G 中將實施例6〜1 0的粉末X射線繞射圖案縱軸,相互各偏移 1 0 0 c p s 描繪。 (實施例7 ) 在各原料的混合比中,除將C a a N 2設定為(0 · 9 8 5 - 0 . 2 5 ) / 3 m〇1,將C a 0設定為0 . 2 5 ιη ο 1之夕卜,其餘均如同實施例6 般的製得螢光體試料,並測量發光特性。將該螢光體試料 的原料組成式、氧•氮濃度、發光特性的測量結果列表於 36 312XP/發明說明書(補件)/94-06/94105848 200536152 表5,並將所獲得螢光體的粉末X射線繞射圖案,依細實 線描繪於圖4 - A〜G中。 (實施例8 )Figure 4-A shows the X-ray diffraction pattern of the Bragg angle (20) across the full range of 0 ° ~ 90 °, and Figure 4-B ~ G is an enlarged view of the characteristic part of the Bragg angle. The system shown in Fig. 4-B is 35 ° ~ 40 °, the system shown in Fig. 4-C is 40 ° ~ 45 °, the system shown in Fig. 4-D is 55 ° to 60 °, and the system shown in Fig. 4-E is 65 ° to 70 ° , Figure 4-F series 7 5 ° ~ 80 0 °, Figure 4-G series 80 ° ~ 8 5 ° range. In addition, for convenience of description, the vertical axes of the powder X-ray diffraction patterns of Examples 6 to 10 in FIGS. 4_A to G are depicted as being offset from each other by 100 c ps. (Example 7) In the mixing ratio of each raw material, except that Caa N 2 was set to (0 · 9 8 5-0.2 5) / 3 m〇1, and Ca 0 was set to 0.2 5 ιη ο On the 1st day, the rest were prepared in the same manner as in Example 6, and the light emission characteristics were measured. The measurement results of the raw material composition formula, oxygen and nitrogen concentration, and luminescence characteristics of this phosphor sample are listed in Table 5 of 36 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152. The powder X-ray diffraction pattern is depicted in Figure 4-A to G as a thin solid line. (Example 8)

在各原料的混合比方面,除將C a 3 N 2設為(0 . 9 8 5 - 0 . 5 0 ) / 3 m〇1,將C a 0設為0 . 5 0 m〇1之夕卜,其餘均如同實施例6 般的製得螢光體試料,並測量發光特性。將該螢光體試料 的原料組成式、氧•氮濃度、發光特性之測量結果列表於 表5,並將所獲得螢光體的粉末X射線繞射圖案,依粗虛 線描繪於圖4 - A〜G中。 (實施例9 ) 除在各原料混合比方面,將C a 3 N 2設為(0 . 9 8 5 - 0 . 7 5 ) / 3 m ο 1,將C a 0設為0 . 7 5 m ο 1之夕卜,其餘均如同實施例6般 的製得螢光體試料,並測量發光特性。將該螢光體試料的 原料組成式、氧·氮濃度、發光特性之測量結果列表於表 5,並將所獲得螢光體的粉末X射線繞射圖案,依細虛線描 繪於圖4-A〜G中。 (實施例1 0 ) 除在各原料混合比方面,將C a 0設為0 . 9 8 5 m ο 1之外, 其餘均如同實施例6般的製得螢光體試料,並如同實施例 5般的測量發光特性。將該螢光體試料的原料組成式、氧· 氮濃度、發光特性之測量結果列表於表5,並將所獲得螢 光體的粉末X射線繞射圖案,依粗單點虛線描繪於圖4 - A〜G 中 0 [表5 ] 37 312XP/發明說明書(補件)/94-06/94105848 200536152 原料裝填組成式 氧·氮濃度 尖峰波長 (nm) 發光強度 (%) 色度 輝度 (%) 〇(wt%) N(wt%) X y 實施例5 Ca〇. 98δΑ 1S i 〇0.023N2.985 : Elio. 0150 2.2 27.5 656.2 115.0 0. 679 0. 320 104· 8 實施例6 Ca〇. 985A1S i 〇0.023N2.985 : Elio. 0150 2.4 28.5 654.0 100.0 0.675 0. 324 100.0 實施例7 Ca〇. 98δΑ 1S i 〇0.273N2.818 : Elio. 0I50 5.2 25.1 646.1 69.7 0.649 0.350 102.6 實施例8 Ca〇. 98δΑ 1S i Oo. 523N2.652 : Euo. 0150 7.3 21.1 637.5 40.7 0.599 0.398 105.1 實施例9 Ca〇. 98δΑ 1S i Oo. 773N2.485 : Elio. 0150 9.0 21.0 624.5 30.8 0. 571 0.426 102.0 實施例 10 Ca〇. 98δΑ 1S i Οι. OO8N2.328 : Elio. 0150 11.3 20.7 611.0 22.4 0.540 0.451 98.4 (相關實施例6〜1 0的探討) 1 .)螢光體中的氧、氮濃度In terms of the mixing ratio of each raw material, in addition to setting Ca 3 N 2 to (0.985-0.50) / 3 m〇1, and setting Ca 0 to 0.50 m〇1 In the rest, a phosphor sample was prepared as in Example 6, and the luminescence characteristics were measured. Table 5 lists the measurement results of the raw material composition formula, oxygen and nitrogen concentration, and luminescence characteristics of the phosphor sample, and the powder X-ray diffraction pattern of the obtained phosphor is depicted in FIG. 4-A as a thick dotted line. ~ G. (Example 9) Except for the mixing ratio of each raw material, Ca 3 N 2 was set to (0.98 5-0.75) / 3 m ο 1 and Ca 0 was set to 0.75 m. ο On the 1st day, the rest were prepared as in Example 6 and the light emission characteristics were measured. Table 5 lists the measurement results of the raw material composition formula, the oxygen and nitrogen concentration, and the luminous characteristics of the phosphor sample, and the powder X-ray diffraction pattern of the obtained phosphor is depicted in FIG. 4-A by a thin dotted line ~ G. (Example 10) A phosphor sample was prepared in the same manner as in Example 6 except that C a 0 was set to 0.98 5 m ο 1 in terms of the mixing ratio of each raw material, and was the same as in Example. 5 general measurement of luminous characteristics. Table 5 lists the measurement results of the raw material composition formula, the oxygen and nitrogen concentration, and the luminous characteristics of the phosphor sample, and the powder X-ray diffraction pattern of the obtained phosphor is depicted in FIG. 4 by a thick single-dotted dotted line. -0 to A ~ G [Table 5] 37 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152 Filling formula of raw material Oxygen and nitrogen concentration peak wavelength (nm) Luminous intensity (%) Chroma luminance (%) 〇 (wt%) N (wt%) X y Example 5 Ca 0.098δA 1S i 〇0.023N2.985: Elio. 0150 2.2 27.5 656.2 115.0 0. 679 0. 320 104 · 8 Example 6 Ca 0. 985A1S i 〇0.023N2.985: Elio. 0150 2.4 28.5 654.0 100.0 0.675 0. 324 100.0 Example 7 Ca0. 98δΑ 1S i 〇0.273N2.818: Elio. 0I50 5.2 25.1 646.1 69.7 0.649 0.350 102.6 Example 8 Ca. 98δΑ 1S i Oo. 523N2.652: Euo. 0150 7.3 21.1 637.5 40.7 0.599 0.398 105.1 Example 9 Ca0. 98δΑ 1S i Oo. 773N2.485: Elio. 0150 9.0 21.0 624.5 30.8 0. 571 0.426 102.0 Example 10 Ca 〇8δΑ 1S i 〇8N2.328: Elio. 0150 11.3 20.7 611.0 22.4 0.540 0.451 98.4 (Related Example 6 Study 0 1) 1) of the phosphor of oxygen, nitrogen concentration

從實施例6朝實施例1 0改變原料中的C a 3 N 2與C a 0之混 ® 合比率,並增加氧裝填量,因此螢光體中的氧濃度分析値 亦將隨之增加。而且,螢光體中的氧濃度將大於從氧裝填 量所計算出的重量%値。此現象可認為因為在實施例6至實 施例1 0的螢光體中,氧不僅含於螢光體結構中,且將吸附 存在於螢光體粒子表面等緣故所致。另一方面,相關氮濃 度分析値,就氮裝填量而言,幾乎同量的氮含於試料中。 由此結果將可判斷理由係在生成相結構外幾乎未另存有 氮,氮係含於螢光體結構中的緣故。 2 .)螢光體中的氧濃度與X射線繞射圖案間之關係 得知從實施例6朝實施例1 0的螢光體發光強度將逐漸 降低。所以,當將實施例6的發光強度設為相對強度1 0 0 % 時,實施例7的螢光體具有約7 0 %的相對強度,而實施例 8〜1 0則在4 0 %以下。 在此針對實施例6至實施例1 0的螢光體結構中所含氧 量與X射線繞射圖案間之關係,參照圖4 - A〜G進行説明。 由圖4 - A〜G中得知,隨螢光體中的氧量增加,便在3 6 . 5 °〜 38 3 12XP/發明說明書(補件)/94-06/94105848From Example 6 to Example 10, the mixing ratio of Ca 3 N 2 and Ca 0 in the raw materials was changed, and the oxygen loading was increased, so the analysis of oxygen concentration in the phosphor will also increase. Moreover, the oxygen concentration in the phosphor will be greater than the weight% 値 calculated from the oxygen loading. This phenomenon is considered to be caused by the fact that in the phosphors of Examples 6 to 10, oxygen is not only contained in the phosphor structure, but also adsorbed on the surfaces of the phosphor particles. On the other hand, related nitrogen concentration analysis 値, in terms of nitrogen loading, almost the same amount of nitrogen was contained in the sample. From this result, it can be judged that the reason is that there is almost no nitrogen in addition to the generated phase structure, and the nitrogen is contained in the phosphor structure. 2.) The relationship between the oxygen concentration in the phosphor and the X-ray diffraction pattern. It is known that the luminous intensity of the phosphor will gradually decrease from Example 6 to Example 10. Therefore, when the luminous intensity of Example 6 is set to a relative intensity of 100%, the phosphor of Example 7 has a relative intensity of about 70%, while that of Examples 8 to 10 is less than 40%. The relationship between the amount of oxygen contained in the phosphor structures of Examples 6 to 10 and the X-ray diffraction pattern will be described with reference to Figs. 4-A to G. From Figure 4-A ~ G, as the amount of oxygen in the phosphor increases, it will be at 36.5 ° ~ 38 3 12XP / Invention Manual (Supplement) / 94-06 / 94105848

200536152 37.5ϋ、41· 9。〜42. 9。 範圍的 尖峰 為開始,40 • 9。〜41· 9〇 56· 3ϋ〜57. 3 '66. 0° 〜67. 0〇 、75· 80〜76· 8〇 及 81. 0°-83 範圍内的特徵尖峰之布拉格角(2 0 )將朝高角度側位身 近上述J C P D S卡中所記載的C a A 1 S i N 3結晶。但是,隨 光體中的氧量增加,X射線繞射尖峰強度亦將逐漸趨 因此判斷結晶性亦將逐漸降低。 此現象可認為隨螢光體結構中所含氧量的增加,該 體的結晶結構將逐漸產生變化的緣故所致。此外,當 施例8、實施例9、實施例1 ◦,裝填C a 0達0 · 5 0 m ο 1 並增加氧裝填量的情況時,因為不純物相的生成或殘 反應原料,因而判斷發光強度將降低。 所以,就從獲得發光強度較高螢光體的觀點,當依C 射線所產生的粉末X射線繞射圖案中,將強度最強之 尖峰的相對強度設為1 0 0 %時,表示相對強度1 0 %以上 射尖峰的主要尖峰之布拉格角(2 0 ),將在3 6 . 5 °〜3 7 · 4 1 . 9 °〜4 2 . 9 °範圍,次一級特徵尖峰在5 6 . 3 °〜5 7 . 3 °範 該等再次一級特徵尖峰在4 0 . 9 °〜4 1 · 9 °、6 6 . 0 °〜6 7 . 0 °, 7 5 . 8 °〜7 6 . 8 °及8 1 . 0 °〜8 3 . 0 °範圍内的實施例6、7所示 體,將屬於較佳的螢光體。 3 .)螢光體中的氧濃度與發光波長之尖峰波長間的關夺 得知實施例從6朝向1 0,螢光體發光波長的尖峰波 從6 5 4 n m朝6 1 1 η m逐漸縮短。 4 .)螢光體中的氧濃度與發光輝度間之關係200536152 37.5ϋ, 41.9. ~ 42. 9. The peak of the range is the beginning, 40 • 9. ~ 41 · 9〇56 · 3ϋ ~ 57.3 '66. 0 ° ~ 67.0, 75 · 80 ~ 76 · 80, and 81. 0 ° -83 Bragg angles of characteristic spikes (2 0) The Ca A 1 S i N 3 described in the above JCPDS card is crystallized toward the high-angle side. However, as the amount of oxygen in the light body increases, the intensity of X-ray diffraction peaks will gradually increase, so it is judged that the crystallinity will gradually decrease. This phenomenon can be considered to be caused by the gradual change of the crystal structure of the phosphor as the amount of oxygen contained in the phosphor structure increases. In addition, in Example 8, Example 9, and Example 1, when Ca 0 was filled to 0 · 50 m ο 1 and the amount of oxygen was increased, it was judged that the luminescence was due to the formation of an impure phase or residual reaction raw materials. The intensity will decrease. Therefore, from the viewpoint of obtaining a phosphor with a higher luminous intensity, when the relative intensity of the strongest peak in the powder X-ray diffraction pattern generated by C rays is set to 100%, the relative intensity is 10%. The Bragg angle (20) of the main spikes of the above shot spikes will be in the range of 36.5 ° to 37. 41.9 ° to 42.9 °, and the characteristic peaks of the next order will be 56.3 ° to 5 °. 7.3 ° Fan and the first-level characteristic peaks are at 40.9 ° ~ 4 1 · 9 °, 66.0 ° ~ 6 7.0 °, 75.8 ° ~ 76.8 ° and 8 1 The bodies shown in Examples 6 and 7 in the range of 0 ° to 83.0 ° will belong to the preferred phosphors. 3.) The interception between the oxygen concentration in the phosphor and the peak wavelength of the light emission wavelength shows that the example is from 6 to 10, and the peak wave of the light emission wavelength of the phosphor gradually changes from 6 5 4 nm to 6 1 1 η m. shorten. 4.) The relationship between the oxygen concentration in the phosphor and the luminous brightness

實施例6至1 0中,得知各實施例的螢光體輝度均I 312XP/發明說明書(補件)/94-06/94105 848 多,接 該螢 弱, 螢光 如實 以上 留未 oK a 繞射 之繞 5。及 圍, 螢光 長將 I乎 39 200536152 為一定狀態。此現象可判斷為隨從實施例6朝1 0,螢光體 發光強度將逐漸降低,相對於此,發光的尖峰波長亦將降 低,而進入人類視覺感度較高的區域,藉此輝度値便幾乎 顯示一定値。 5 .)螢光體中的氧濃度與發光色度間之關係 實施例6至1 0中,得知各實施例的螢光體在發光色度X 為0 . 5〜0 . 7、發光色度y為0 . 3〜0 . 5範圍的最佳範圍。 (比較例1 )In Examples 6 to 10, it was learned that the phosphor brightness of each example was more than 312XP / Invention Specification (Supplement) / 94-06 / 94105 848, and then the fluorescence was weak, and the fluorescence remained as above. Diffraction around 5. In the surrounding area, the fluorescent length is almost 39 200536152 to a certain state. This phenomenon can be judged as following Example 6 towards 10, the luminous intensity of the phosphor will gradually decrease. In contrast, the peak wavelength of the luminescence will also decrease, and it will enter the region with higher human visual sensitivity, thereby the brightness will be almost The display must be 値. 5.) The relationship between the oxygen concentration in the phosphor and the light-emitting chromaticity In Examples 6 to 10, it is known that the light-emitting chromaticity X of each of the phosphors of the embodiments is 0.5 to 0.7. The degree y is an optimal range of 0.3 to 0.5. (Comparative Example 1)

根據上述專利文獻4、5調製C a 2 S i 5 N 8 : E u螢光體,並測 量X射線繞射圖案。此測量結果如圖5所示。將圖5所獲 得X射線繞射尖峰與專利文獻4所揭文獻(S c h 1 i e p e r a n dThe C a 2 S i 5 N 8: E u phosphor was modulated in accordance with the aforementioned Patent Documents 4 and 5, and the X-ray diffraction pattern was measured. This measurement result is shown in Figure 5. The X-ray diffraction peaks obtained in FIG. 5 are compared with those disclosed in Patent Document 4 (S c h 1 i e p e r a n d

Schlick:Nitridosilicate I, Hochtemperatursynthese u n d Kristal lstruktur von C a 2 S i 5 N 8, Z. anorg. al lg. Che. 6 2 1,( 1 9 9 5 ),p . 1 0 3 7 )中的結構解析結果進行比較,結果確 認到該螢光體為專利文獻4、5所揭的C a 2 S i 5 N 8 : E u螢光 體。該螢光體的晶系係單斜晶,完全不同於本發明螢光體Schlick: Nitridosilicate I, Hochtemperatursynthese und Kristal lstruktur von C a 2 S i 5 N 8, Z. anorg. Al lg. Che. 6 2 1, (1 9 9 5), p. 1 0 3 7) As a result of comparison, it was confirmed that the phosphor is a Ca 2 S i 5 N 8: E u phosphor disclosed in Patent Documents 4 and 5. The crystal system of the phosphor is monoclinic, which is completely different from the phosphor of the present invention.

(比較例2 ) 根據上述專利文獻3調製α -矽龍螢光體,並測量X射 線繞射圖案。在此所謂「α -矽龍」係指氮化物與氧化物之 中間組成的氧氮化物系陶瓷,由石夕、铭、氧、氮等4元素 所構成,將a - S i 3 L的S i位置取代為A 1,並將Ν位置取 代為0且固溶,便可形成以(Si,Al)(0,N)4四面體為骨架, 且固溶著不同於冷-石夕龍的金屬M(M:除Li、Mg、Ca、Y、La 40 312XP/發明說明書(補件)/94-06/94105848 200536152 及C e外的鑭系金屬,0 < x S 2 )的結構。結果,α -矽龍螢 光體的X射線繞射尖峰顯示出類似於a - S i 3 Ν 4之X射線繞 射尖峰的繞射圖案。測量結果如圖6所示。 圖6所示X射線繞射尖峰係類似a - S i 3 N 4的圖案。在此 更與J C P D S所報告指出的矽龍繞射圖案進行比較,結果X 射線繞射尖峰一致,可確認圖6所示習知技術的螢光體係 專利文獻3所揭α -矽龍螢光體。α -矽龍的晶系為六方 晶,此亦屬於與本發明螢光體完全不同的結構。(Comparative Example 2) An α-silicon phosphor was modulated according to the above-mentioned Patent Document 3, and an X-ray diffraction pattern was measured. The term "α-silon" refers to an oxynitride-based ceramic composed of a nitride and an oxide. It is composed of 4 elements such as Shi Xi, Ming, oxygen, and nitrogen. The i position is replaced by A 1 and the N position is replaced by 0 and the solution is solid solution, and a (Si, Al) (0, N) 4 tetrahedron is used as a skeleton, and the solution is different from that of Cold-Shi Xilong. Structure of metal M (M: a lanthanoid metal other than Li, Mg, Ca, Y, La 40 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152 and Ce, 0 < x S 2). As a result, the X-ray diffraction peaks of the α-silon phosphor showed a diffraction pattern similar to the X-ray diffraction peaks of a-S i 3 Ν 4. The measurement results are shown in Figure 6. The X-ray diffraction spike shown in FIG. 6 is a pattern similar to a-S i 3 N 4. Here, it is compared with the silicon dragon diffraction pattern reported by JCPDS. As a result, the X-ray diffraction peaks are consistent, and it can be confirmed that the conventional technology of the fluorescent system shown in FIG. 6 is disclosed in α-silicon phosphor disclosed in Patent Document 3. . The crystal system of α-silon is hexagonal, which also belongs to a structure completely different from the phosphor of the present invention.

(實施例1 1 ) 準備市售的 Ca3N2(2N)、A1N(3N)、Si3N4(3N)、Eu2〇3(3N), 依各元素莫耳比為Ca:Al:Si:Eu = 0. 985:1:1:0. 015之方式 秤取各原料,並在氮環境下的手套箱中使用研鉢進行混 合。將所混合的原料填充於氮化硼製坩鍋中,並在壓力 0 . 0 5 Μ P a的氮環境中,依1 5 °C / m i η .的昇溫速度昇溫至1 5 0 0 °C ,然後在1 5 0 (TC中保持3小時而進行燒成,之後再於1 小時内從1 50 0 °C冷卻至200°C,便獲得組成式Ca〇.985SiAlN3:Euu15的 螢光體。 經對所獲得螢光體粉末照射4 6 0 n m單色光,結果如圖1 1 所示,顯示出在6 5 6 n m處具發光尖峰的紅色發光。此外, 經化學分析所獲得的不純物碳濃度、不純物氧濃度,分別 為0 . 0 4 3重量%、2 . 0 9重量%。 (比較例3 ) 除將燒成所使用的容器,從氮化硼製坩鍋改變為碳製坩 鍋之外,其餘均依如同實施例1 1的條件製作螢光體。經對 41 312ΧΡ/發明說明書(補件)/94-06/94105848 200536152 所獲得螢光體粉末照射4 6 0 n m單色光,便顯示出在6 5 0 n m 具發光尖峰的紅色發光。圖1 1所示係本比較例所製得螢光 體的相對發光強度及經化學分析所獲得不純物碳濃度與不 純物氧濃度。(Example 11) Commercially available Ca3N2 (2N), A1N (3N), Si3N4 (3N), and Eu2〇3 (3N) were prepared, and the molar ratio of each element was Ca: Al: Si: Eu = 0.985 : 1: 1: 0. 015 method to weigh each raw material, and use a mortar to mix in a glove box under a nitrogen environment. The mixed raw materials were filled into a crucible made of boron nitride, and the temperature was raised to 15 0 ° C at a temperature increase rate of 15 ° C / mi η in a nitrogen environment at a pressure of 0.05 MPa. Then, it was fired after being held in 150 ° C. for 3 hours, and then cooled from 150 ° C. to 200 ° C. within 1 hour to obtain a phosphor having a composition formula Ca.985SiAlN3: Euu15. The obtained phosphor powder was irradiated with monochromatic light of 4 60 nm, and the result is shown in FIG. 1 1, which shows red light emission with a peak of light emission at 6 5 6 nm. In addition, the impurity carbon obtained by chemical analysis The concentration and the impurity oxygen concentration were 0.043% by weight and 2.09% by weight, respectively. (Comparative Example 3) The vessel used for firing was changed from a crucible made of boron nitride to a crucible made of carbon. Except for the rest, the phosphor was produced under the same conditions as in Example 11. After 41 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152, the phosphor powder obtained was irradiated with 4 60 nm monochromatic light. , It shows a red light emission with a light emission peak at 650 nm. Figure 11 shows the relative luminous intensity and chemical conversion of the phosphor prepared in this comparative example. Analysis of the carbon concentration and impurity oxygen concentration was not obtained pure.

如圖1 1與圖1 2所示,燒成容器使用碳製坩鍋所製得螢 光體,相較於使用氮化硼製坩鍋而製得實施例1的螢光體 下,將獲得發光強度降低約2 6 %的結果。使用碳製坩鍋所 製得螢光體將因不純物碳量增加為0 . 0 8 0重量%,因此判斷 該不純物碳將造成發光強度降低。 (比較例4 ) 除將燒成所使用的容器從氮化硼製坩鍋改變為氧化鋁 製坩鍋之外,其餘均依如同實施例1 1的條件製作螢光體。 對所獲得螢光體粉末照射4 6 0 n m單色光,結果顯示在6 5 2 n m 具發光尖峰的紅色發光。圖1 1所示係本比較例所製得螢光 體的相對發光強度及經化學分析所獲得不純物碳濃度與不 純物氧濃度。 如圖1 1與圖1 2所示,燒成容器使用氧化鋁製坩鍋所製 得螢光體,在相較於使用氮化硼製坩鍋所製得的實施例1 螢光體之下,將獲得發光強度降低約2 0 %的結果。使用氧 化鋁製坩鍋所製得螢光體將因為不純物氧量增加至3 . 0 2 重量%,因此判斷該不純物氧將造成發光強度降低。 以上,根據上述實施之形態針對本發明進行説明,惟本 發明並不僅限於此。 【圖式簡單說明】 42 312XP/發明說明書(補件)/94-06/94105848 200536152 圖1(A)、( B )為本發明螢光體主要生成相的粉末X射線 繞射圖案及該X射線繞射圖案與J C P D S卡的尖峰比較。 圖2為本發明螢光體主要生成相的激發光譜圖。 圖3為本發明螢光體主要生成相的發光光譜圖。 圖4 - A為本發明實施例6〜1 0的螢光體主要生成相之粉 末X射線繞射圖案。 圖4 - B為本發明實施例6〜1 0的螢光體主要生成相之粉 末X射線繞射圖案。As shown in FIG. 11 and FIG. 12, the phosphor obtained by using a crucible made of carbon for the firing container is compared with the phosphor produced in Example 1 by using a crucible made of boron nitride. As a result, the luminous intensity was reduced by about 26%. The phosphor produced by using a carbon crucible will increase the amount of carbon in the impurities to 0.80% by weight. Therefore, it is judged that the carbon in the impurities causes a decrease in luminous intensity. (Comparative Example 4) A phosphor was produced under the same conditions as in Example 11 except that the container used for firing was changed from a crucible made of boron nitride to a crucible made of alumina. The obtained phosphor powder was irradiated with a monochromatic light of 460 nm, and the result showed a red light emission with a luminescent peak at 652 nm. Figure 11 shows the relative luminous intensity of the phosphor prepared in this comparative example and the carbon concentration and the oxygen concentration of the impurities obtained by chemical analysis. As shown in Fig. 11 and Fig. 12, the phosphor obtained by using a crucible made of alumina as the firing container is lower than the phosphor of Example 1 obtained by using a crucible made of boron nitride. The result that the luminous intensity is reduced by about 20% will be obtained. The phosphor produced by using an aluminum oxide crucible will increase the amount of impurity oxygen to 3.02% by weight. Therefore, it is judged that the impurity oxygen will cause a decrease in luminous intensity. The present invention has been described based on the embodiments described above, but the present invention is not limited to this. [Schematic description] 42 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152 Figures 1 (A) and (B) are powder X-ray diffraction patterns of the main generated phase of the phosphor of the present invention and the X The ray diffraction pattern is compared with the spikes of the JCPDS card. Fig. 2 is an excitation spectrum diagram of the main generated phase of the phosphor of the present invention. FIG. 3 is a light emission spectrum chart of the main generated phase of the phosphor of the present invention. Figure 4-A shows the powder X-ray diffraction pattern of the phosphors in the main generation phase of Examples 6 to 10 of the present invention. Figure 4-B shows the powder X-ray diffraction pattern of the phosphors in the main generation phase of Examples 6 to 10 of the present invention.

圖4 - C為本發明實施例6〜1 0的螢光體主要生成相之粉 末X射線繞射圖案。 圖4 - D為本發明實施例6〜1 0的螢光體主要生成相之粉 末X射線繞射圖案。 圖4 - E為本發明實施例6〜1 0的螢光體主要生成相之粉 末X射線繞射圖案。 圖4 - F為本發明實施例6〜1 0的螢光體主要生成相之粉 末X射線繞射圖案。 圖4 - G為本發明實施例6〜1 0的螢光體主要生成相之粉 末X射線繞射圖案。 圖5為比較例的習知螢光體之X射線繞射圖案。 圖6為比較例的習知螢光體之X射線繞射圖案。 圖7為本發明螢光體的發光光譜圖。 圖8為本發明螢光體的激發光譜圖。 圖9為本發明螢光體的組成與發光強度之圖形。 圖1 0為本發明及習知技術螢光體的發光光譜圖。 43 312XP/發明說明書(補件)/94-06/94105848 200536152 圖1 1為製造本發明螢光體時所使用燒成容器(坩鍋)的 材質與所製得螢光體特性及不純物濃度之表。 圖1 2為供燒成製造本發明螢光體之C a A 1 S 1 N 3用的燒成 容器(坩鍋)材質與上述螢光體發光強度間之關係圖。Figure 4-C shows the powder X-ray diffraction pattern of the phosphors in the main generation phase of Examples 6 to 10 of the present invention. Fig. 4-D shows the powder X-ray diffraction pattern of the main phase of the phosphors in Examples 6 to 10 of the present invention. Fig. 4-E shows the powder X-ray diffraction pattern of the main phase of the phosphors in Examples 6 to 10 of the present invention. Figure 4-F shows the powder X-ray diffraction pattern of the phosphors in the main generation phase of Examples 6 to 10 of the present invention. Figure 4-G is a powder X-ray diffraction pattern of the phosphors in the main generation phase of Examples 6 to 10 of the present invention. FIG. 5 is an X-ray diffraction pattern of a conventional phosphor of a comparative example. FIG. 6 is an X-ray diffraction pattern of a conventional phosphor of a comparative example. FIG. 7 is a light emission spectrum chart of a phosphor of the present invention. FIG. 8 is an excitation spectrum diagram of a phosphor of the present invention. Fig. 9 is a graph showing the composition and luminous intensity of the phosphor of the present invention. FIG. 10 is a light emission spectrum chart of the phosphor of the present invention and the conventional technology. 43 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152 Fig. 1 1 shows the material of the firing container (crucible) used in the manufacture of the phosphor of the present invention, the characteristics of the produced phosphor and the concentration of impurities. table. Fig. 12 is a graph showing the relationship between the material of a firing container (crucible) used for firing and manufacturing the C a A 1 S 1 N 3 phosphor of the present invention and the above-mentioned phosphor luminous intensity.

44 312XP/發明說明書(補件)/94-06/9410584844 312XP / Invention Specification (Supplement) / 94-06 / 94105848

Claims (1)

200536152 十、申請專利範圍: 1 . 一種螢光體,係由組成式M m A a B b N n : Z z所表示者;其 特徵為, 上述螢光體中,Μ元素係價數Π價的元素,Α元素係價 數m價的元素,B元素係價數I V價的元素,N係氮,Z元 素係活化劑,(m + z ) : a : b : η = 1 : 1 : 1 : 3。 2 .如申請專利範圍第1項之螢光體,其中,Μ元素係從 Be、Mg、Ca、Sr、Ba、Zn、Cd、Hg中至少選擇1個以上的200536152 10. Scope of patent application: 1. A phosphor, represented by the composition formula M m A a B b N n: Z z; characterized in that, in the above phosphor, the M element is valence Π Element, element A with valence number m, element B with valence number IV, N-based nitrogen, Z-based activator, (m + z): a: b: η = 1: 1: 1 : 3. 2. The phosphor according to item 1 of the patent application scope, wherein the M element is at least one selected from Be, Mg, Ca, Sr, Ba, Zn, Cd, and Hg. 元素; A 元素係從 B(石朋)、Al、Ga、In、Tl、Y、Sc、P、As、 S b、B i中至少選擇1個以上的元素; B 元素係從 Si、 Ge、 Sn、 Ti、 Hf、 Mo、 W、 Cr、 Pb、 Zr 中至少選擇1個以上的元素; Z元素係從稀土族元素或過渡金屬元素中至少選擇1個 以上的元素。 3.如申請專利範圍第1或2項之螢光體,其中,A元素Element; A element is at least one element selected from B (Shi Peng), Al, Ga, In, Tl, Y, Sc, P, As, Sb, Bi; element B is selected from Si, Ge, At least one element is selected from Sn, Ti, Hf, Mo, W, Cr, Pb, and Zr; the Z element is at least one element selected from a rare earth element or a transition metal element. 3. If the phosphor of item 1 or 2 of the patent application scope, wherein A element 4. 如申請專利範圍第1至3項中任一項之螢光體,其 中,上述螢光體的母體構造中並未含氧。 5. 如申請專利範圍第1至4項中任一項之螢光體,其 中,上述Μ元素與上述活化劑Z元素的莫耳比:z / ( m + z )値, 係0 . 0 0 0 1以上、0 . 5以下。 6.如申請專利範圍第1至5項中任一項之螢光體,其 中,Μ元素係從M g、C a、S r、B a、Ζ η中至少選擇1個以上 45 312ΧΡ/發明說明書(補件)/94-06/94105848 200536152 的元素。 7.如申請專利範圍第1至6項中任一項之螢光體,其 中,Z元素係從E u、Μ η、C e中至少選擇1個以上的元素。 8 .如申請專利範圍第7項之螢光體,其中,Z元素係E u。 9 .如申請專利範圍第8項之螢光體,其中,Μ元素係C a。 1 0 .如申請專利範圍第1至9項中任一項之螢光體,其 中,上述螢光體係粉末狀。4. For the phosphor of any one of the items 1 to 3 of the scope of patent application, wherein the mother structure of the above phosphor does not contain oxygen. 5. The phosphor according to any one of claims 1 to 4, in which the molar ratio of the M element to the activator Z element: z / (m + z) 値, is 0. 0 0 0 1 or more and 0.5 or less. 6. The phosphor according to any one of claims 1 to 5, wherein the M element is at least one selected from Mg, Ca, Sr, Ba, Zη 45 45 312XP / invention Elements of Instructions (Supplements) / 94-06 / 94105848 200536152. 7. The phosphor according to any one of claims 1 to 6, wherein the Z element is at least one element selected from Eu, Mn, and Ce. 8. The phosphor according to item 7 of the patent application scope, wherein the Z element is Eu. 9. The phosphor according to item 8 of the scope of patent application, wherein the M element is Ca. 10. The phosphor according to any one of claims 1 to 9 of the scope of patent application, wherein the above fluorescent system is in the form of a powder. 1 1 .如申請專利範圍第1 0項之螢光體,其中,上述螢光 體的平均粒度係2 0 // m以下、1 // Π1以上。 1 2 .如申請專利範圍第1至1 1項中任一項之螢光體,其 中係含有:當將利用C ο K (2射線得到之粉末X射線繞射圖案 中強度最強的繞射尖峰之相對強度設定為1 0 0 %時, 該X射線繞射圖案的布拉格角(2 0 )在3 6 . 5 °〜3 7 · 5 °及 4 1 . 9 °〜4 2 . 9 °之範圍内,含有顯示出相對強度1 0 %以上之繞 射尖峰之相作為主要生成相。 1 3 .如申請專利範圍第1至1 1項中任一項之螢光體,其 中係含有:當將利用C ο Κ α射線得到之粉末X射線繞射圖案 中強度最強的繞射尖峰之相對強度設定為1 0 0 %時, 該X射線繞射圖案的布拉格角(2 0 )在3 6 . 5 °〜3 7 · 5 °、 4 1 . 9 °〜4 2 . 9 °及5 6 · 3 °〜5 7 . 3 °之範圍内,含有顯示出相對強 度1 0 %以上之繞射尖峰之相作為主要生成相。 1 4 .如申請專利範圍第1至1 1項中任一項之螢光體,其 中係含有:當將利用C ο Κ α射線得到之粉末X射線繞射圖案 中強度最強的繞射尖峰之相對強度設定為1 0 0 %時, 46 312ΧΡ/發明說明書(補件)/94-06/94105848 200536152 該X射線繞射圖案的布拉格角(2 0 )在3 6 · 5 °〜3 7 . 5 °、 40.9〇〜41.90、 41.9。〜42.90、 56.30〜57.30、 66.0°〜67.0〇、 7 5 . 8 °〜7 6 . 8 °及8 1 . 0 °〜8 3 . 0 °之範圍内,含有顯示出相對強 度1 0 %以上之繞射尖峰之相作為主要生成相。 1 5 .如申請專利範圍第1 2至1 4項中任一項之螢光體, 其中’上述生成相的結晶糸係斜方晶。 1 6 .如申請專利範圍第1至1 1項中任一項之螢光體,其 中,碳含有量係少於0. 0 8重量%。1 1. The phosphor according to item 10 of the scope of patent application, wherein the average particle size of the phosphor is below 20 // m and above 1 // Π1. 12. The phosphor according to any one of claims 1 to 11 in the scope of patent application, which contains: the strongest diffraction peak in the powder X-ray diffraction pattern obtained by using C ο K (2 rays) When the relative intensity is set to 100%, the Bragg angle (20) of the X-ray diffraction pattern is in the range of 36.5 ° to 37.5 ° and 41.9 ° to 42.9 °. Within, the phase containing diffraction peaks showing a relative intensity of more than 10% is used as the main generated phase. 1 3. As the phosphor of any one of the items 1 to 11 in the scope of patent application, which contains: When will When the relative intensity of the strongest diffraction peak in the powder X-ray diffraction pattern obtained by using C ο α rays is set to 100%, the Bragg angle (2 0) of the X-ray diffraction pattern is 36. 5 ° ~ 3 7 · 5 °, 4 1 .9 ° ~ 4 2. 9 ° and 5 6 · 3 ° ~ 5 7. 3 °, including phases with diffraction peaks showing a relative intensity of 10% or more As the main generating phase. 14. The phosphor according to any one of claims 1 to 11 in the scope of patent application, which contains: powder X-rays to be obtained by using C ο α rays When the relative intensity of the strongest diffraction peak in the diffraction pattern is set to 100%, 46 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152 The Bragg angle (2 0) of the X-ray diffraction pattern is at 3 6 · 5 ° ~ 37.5 °, 40.9〇 ~ 41.90, 41.9. ~ 42.90, 56.30 ~ 57.30, 66.0 ° ~ 67.0〇, 75.8 ° ~ 76.8 °, and 81.0 ° ~ In the range of 83.0 °, the phase containing diffraction peaks showing a relative intensity of more than 10% is used as the main generated phase. 15. Fluorescence such as any of the items 12 to 14 in the scope of patent application 0 8 重量。 The body, wherein the crystal phase of the above-mentioned generated phase is orthorhombic. 1 6. The phosphor according to any one of claims 1 to 11 in the scope of patent application, wherein the carbon content is less than 0.08 weight %. 1 7.如申請專利範圍第1至1 1項中任一項之螢光體,其 中,氧含有量係少於3. 0重量%。 1 8.如申請專利範圍第1至1 1項中任一項之螢光體,其 中,碳含有量係少於0. 〇 8重量%,且氧含有量少於3 · 0重 量%。 1 9 . 一種光源,其特徵係具有申請專利範圍第1至1 8項 中任一項之螢光體與發出第1波長光的發光部; 將上述第1波長光其中一部分當作激發源,使上述螢光 體依不同於上述第1波長的波長發光。 2 0 .如申請專利範圍第1 9項之光源,其中,發出上述第 1波長光的發光部係LED。 2 1 .如申請專利範圍第1 9或2 0項之光源,其中,上述 第1波長係300nm〜550nm之波長。 2 2 . —種L E D,其特徵係具有申請專利範圍第1至1 8項 中任一項之螢光體、與發出第1波長光的發光部; 將上述第1波長光的其中一部分當作激發源,使上述螢 47 312XP/發明說明書(補件)/94-06/94105848 200536152 光體依不同於上述第1波長的波長發光。 2 3.如申請專利範圍第2 2項之L E D,其中,上述第1波 長係3 0 0 n m〜5 5 0 n m之波長。 2 4 . —種氮化物螢光體之製造方法,係用以製造申請專 利範圍第1至1 8項中任一項之氮化物螢光體者;其特徵為, 將上述氮化物螢光體原料填充於氮化硼材質之燒成容 器内,並在非活性環境中進行燒成而製得氮化物螢光體。 2 5 .如申請專利範圍第2 4項之氮化物螢光體之製造方 φ 法,其中,上述氮化物螢光體原料係在1 2 0 0 °C〜1 7 0 0 °C溫 度中進行燒成。 2 6 .如申請專利範圍第2 4或2 5項之氮化物螢光體之製 造方法,其中,在對上述氮化物螢光體原料進行燒成時, 係在0 . 5 Μ P a以下的壓力中進行燒成。1 7. The phosphor according to any one of claims 1 to 11 in the scope of patent application, wherein the oxygen content is less than 3.0% by weight. 1 8. The phosphor according to any one of claims 1 to 11 in the scope of patent application, wherein the carbon content is less than 0.8 wt% and the oxygen content is less than 3.0 wt%. 19. A light source characterized by having a phosphor according to any one of claims 1 to 18 and a light-emitting portion emitting light of a first wavelength; using a part of the light of the first wavelength as an excitation source, The phosphor is caused to emit light at a wavelength different from the first wavelength. 20. The light source according to item 19 of the scope of patent application, wherein the light-emitting part emitting light of the first wavelength is an LED. 2 1. The light source according to item 19 or 20 of the patent application scope, wherein the first wavelength is a wavelength of 300 nm to 550 nm. 2 2. — An LED having the features of a phosphor according to any one of claims 1 to 18 and a light-emitting portion that emits light of a first wavelength; and a part of the light of the first wavelength is regarded as The excitation source causes the above-mentioned fluorescent 47 312XP / Invention Specification (Supplement) / 94-06 / 94105848 200536152 to emit light at a wavelength different from the first wavelength. 2 3. According to the LED of item 22 of the patent application scope, wherein the first wavelength is a wavelength of 3 0 0 m to 5 5 0 m. 24. — A method for manufacturing a nitride phosphor, which is used to manufacture a nitride phosphor according to any one of claims 1 to 18 in the scope of patent application; characterized in that the above-mentioned nitride phosphor is Raw materials are filled in a firing container made of boron nitride, and firing is performed in an inactive environment to obtain a nitride phosphor. 25. According to the φ method for manufacturing a nitride phosphor according to item 24 of the scope of patent application, wherein the above-mentioned nitride phosphor raw material is carried out at a temperature of 1 2 0 ° C ~ 1 7 0 ° C Sintered. 2 6. The method for manufacturing a nitride phosphor according to item 24 or 25 of the scope of application for a patent, wherein, when the above-mentioned nitride phosphor raw material is fired, the content is 0.5 M Pa or less. Baking is performed under pressure. 48 312XP/發明說明書(補件)/94-06/9410584848 312XP / Invention Specification (Supplement) / 94-06 / 94105848
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