200535264 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種如本案申請專利範圍第丨項所述之 方法及~種如申請專利範圍第1 3項所述之設備。 【先前技術】 玻璃、箔、膜及其它基材上設以薄膜層，用以使其獲 得某些特性，其中該等薄膜層被加於合成材料層等之上， 以使其變得不漏氣。 關於該等層膜之加入，目前已有數種方法可爲之，其 中僅濺鍍及蒸鍍法將述於此。較諸濺鍍法，蒸鍍法之層膜 加入速度爲其10至100倍。 一種藉由一電子束行蒸鍍之方法已爲一般所知 (EP09101 10A2)，然其問題在於電子束之選擇性控制，而非 蒸鍍法沉積之層膜的測量。 再者，層膜厚度得以測量光吸收之方式爲之亦爲一般 所知，然測量方法不能用於相對較厚及吸收較弱之層膜 上，因一可能存在之弱吸收訊號可能爲干涉效應所影響 (Quality Control and Inline Optical Monitoring for Opaque Film, AIMCAL Fall Conference, October 28，2003) o 【發明內容】 因此，本發明之目的即在於解決鍍膜方法之調節的問 題，其得使大部份不吸收鍍膜材料之厚度在一基材之寬度 方向上爲定常。 該問題得依本案申請專利範圍第1項所述之特性而獲 解決。 200535264 因此’本發明係關於一種調節一在其長度方向上移動 之網材上一鍍膜材料之層膜厚度的方法及設備。本發明 中’該層膜厚度受測量者爲該網材之寬度方向上的數處， 且鍍膜設備被加調節，以使層膜厚度在網材之寬度方向固 定不變。厚度之調節可利用變化蒸鍍鍍膜材料之電子束強 度之方式達成，亦可以對網材寬度方向上數個蒸鍍坩堝獨 立加熱之方式達成。當有一傳輸測量儀器存在時，鍍膜材 料之組成亦可獲調節，以使該組成在網材之寬度方向上爲 定常。 本發明之優點之獲致係因其鍍膜時電子束蒸鍍器之 使用使一基材寬度方向上之電子束可獲調節、而使鍍膜材 料得在該基材之整個寬度方向上均勻分佈之故。 在測量大部份爲不吸收之鍍膜材料的厚度時，介電層 之光譜中干涉效應存在可得最大値及最小値的特性應用於 其中，其中該最大値及最小値代表層膜厚度之光學測量 値。 經過測量之層膜厚度可用以控制鍍膜過程，如可控制 待蒸鍍材料上電子束之強度及（或）偏離角。 【實施方式】 第1圖爲本發明之一高速蒸鍍沉積設備之透視圖，該 設備包含二處理室2,3,其中一處理室2包含一饋出圓柱體 4及一上舉圓柱體6，另一處理室3設有蒸鍍沉積設備8， 其中饋出圓柱體4爲一未受鍍合成材料膜5所用，上舉圓 柱體6則爲一已鍍合成材料膜7所用。圖中，能見之第二 處理室3僅有一小部份，較大部份於圖中省略，以使能較 200535264 淸楚見得該蒸鍍沉積設備8。該蒸度沉積設備8包含一裝 有待蒸鍍材料1 0之坩堝9及二電子束槍1 1，丨2。 該二沉積室2，3以窄槽互相連接’以使待鍍膜5各別自 一處理室2或3經由導引滾輪22至27移至特定另一處理 室3或2中’其中該二處理室2,3之壓力差約爲1〇2。. 一磁偏流單元用以對電子束槍1 1，1 2之水平入射電子 束28，29加以偏流，其中電子束2 8,2 9垂直於待蒸鍍材料 上，而磁偏流單元未示於圖中。一板爲該設備之一部份， 其與整個設備之大部份零件相接，並以標號1 6表示，該等馨 大部份零件可移出處理室2之外，以使處理室較易維護。 設備1中合成材料膜5的塗覆鍍將說明如下。 一驅動馬達以箭頭3 〇之方向驅動上舉圓柱體6，鍍膜 7之端並受固定。未受鍍之膜5經由導引滾26,27離開該外 饋圓柱體4 ’並被置於覆鍍滾輪25之上。此時，膜5因電 子束28，29對鍍膜材料10之加熱而爲材料粒子所轟擊，材 料粒子蒸鍍沉積於該膜5上。箭頭3 1，3 2所指之電子束2 8，2 9 在至少一方向上前後移動，以使材料1 〇被蒸鍍在坩堝9的 鲁 整個長度上。 以上述方式爲之，鍍膜材料1 〇便形成於膜7之整個寬 度上’且寬度線上之每一點可設以一蒸鍍強度，即鍍膜材 料之蒸鍍速率在膜寬度方向上爲可調整者，可藉控制導引 系統及電子束強度之方式達成之。 坩堝9之設置數可不僅爲一，數個蒸鍍坩堝可以一個 接一個的方式設置其中，如DE402703 4專利中所述者即爲 其一例。 200535264 第2圖爲自第丨圖加以放大所得之....-·部份區域圖，本 圖可淸楚視得滾輪23及膜5,其中膜5爲滾輪23所導引。 膜5已鍍於其下側上’該膜厚度以數個反射測量儀器40至 4 5所測量，其中每一反射測量儀器包含一光傳輸器及一光 接收器。測量得之反射光訊號轉換成電訊號，並經由線4 6 至5 1傳導至評估電路5 2。反射測量儀器4 0至4 5有其能量 供應線，但未示於第2圖中。 評估電路5 2連接至一電子束2 8，2 9所用之一控制裝置 (未顯示）處’該等電子束之i度或偏流角以爲已測層膜厚 度之函數的方式受調節。若層膜5在其寬度方向某一位置 上之厚度太小時，該位置下方之蒸鍍速率增加，以使該位 置之層膜厚度增加。 蒸鍍坩堝得以數個連續設置之樣式出現，其得受獨立 加熱而使蒸鍍在膜5寬度方向上爲可變。 除反射測量儀器4 0至4 5外，一傳輸測量儀器5 3亦可 用於其中傳輸。傳輸測量儀器5 3包含一光學傳輸器5 4及 一光學接收器44，其中前者53包位於膜5之下，而後者 44位於該膜之上。傳輸器54及接收器55同時連接至評估 電路5 2，評估電路5 2同時亦作爲能量供應器。再利用短波 範圍（<450nm，一般波長介於350及400nm之間）之一單色 傳輸測量，層膜中是否有殘留吸收可獲判定，這在於判定 不同傳輸値時很輕易的。因此，該層可能在膜之左側邊緣 有5 %之傳輸比例（3 6 0 n m之波長下測得），在膜之中央及右 側邊緣有8 %及7 %之傳輸比例。藉由選擇性之氧加入，膜 之傳輸比例在所有測量位置上可爲8 %等一定値，如此可確 200535264 保層膜之氧化狀態在膜之各處皆相等。該方法（弱吸收層所 用）假設層膜厚度在層膜整個寬度尙皆爲相等，並可與 DE19745771A1揭露之調節方式倂用。 反射測量系統並用以決定極値之自動光譜位置，極値 之光g普iu直用以校正電子束控制用變數。藉由傳輸測量儀 器5 3所爲之另一傳輸測量，層膜之可能殘留吸收相關之資 訊亦可獲得，其中吸收係由公式A= 100-R-T獲得，其中R 爲反射率，T爲傳輸率，吸收A之値用以校正鍍膜過程中 進入之反應氣流所用之變數，A所用之標稱値一般介於0 % # 至1 0 %之間。藉此，層膜之組成可獲調節，以使其在網材 之整個寬度上爲定常。 第3圖所示爲白光干涉之原理。基材60上加以一層膜 61，且層膜61之幾何厚度爲D。一白光束62以一角度入 射於層膜61之表面上。光束62之一部份反射成爲光束63， 而光束62之另一部份64則穿透層膜61，並只爲基材60 之表面反射成爲光束65。二光束63,65亦圖示爲光波66， 67，其爲弦波，可彼此互消或互長。 φ 第4圖所示爲干涉原理，雖然不與光束有關，但與光 波有關；且光波不以一角度入射，而係以垂直於一反射裝 置入射，一反射率η爲1.52之玻璃板70上，一 MgF2層膜 71形成其上。該層膜71之反射率η爲1.38,其厚度爲入射 光波長之四分之一（λ /4)。入射光波72在層膜71表面上部 份反射，而反射光波7 3之振幅小於入射光波7 2者。 光波72亦在玻璃板70表面74上反射，並在光波73 上疊加成光波75。由於二光波7 3,7 5有180度的相位差， 200535264 因此該兩光波相同之振幅互相抵消。若該等振幅有些微不 同，則所形成之光波7 6有非常小的振幅，其表示λ /4厚度 之層膜可視爲一抗反射層。 波7 3及7 5之互相抵消只發生在層膜7 1之厚度爲λ /4 時，若其厚度不爲該値時，所形成之波7 6的振幅增加。若 波長爲已知，則層膜厚度與方程式η · d= λ /4之關係可藉 決定反射光波7 6振幅之最大値及最小値而繪得，其中d爲 幾何厚度，η爲折射率。舉例而言，若一最小値發生於λ 二4 8 0nm時，則層膜之厚度爲I20nm。薄層之實際厚度及長 鲁 度間的更進一步關係可見於DE 3 9 3 6 5 4 1 C2專利之內容。 爲能決定反射光有一最小振幅處之波長，該導引至層 膜7 1上之光的波長被加以變動，即該光在可見光範圍約 3 8 0 n m變動至7 8 0 n m間。該波長的改變得以光譜光度計加 以測重（S靑參考 Naumann/ Schrader: Bauelemente der Optik， 5th edition，1 9 8 7，16.2，pp. 4 8 3 至 4 8 7 及 D E 3 4 0 6 6 4 5 C 2 等 文獻）。 如第2圖所示，若反射係於一膜寬度方向上數個位置 φ 處測得’則一具數個光波導之光譜光度計可有利地提供於 其中’且該等光譜光度計使用相同之光源。以此方式爲之， 數個位置之反射圖可以單一光源測得。 第5圖顯示氧化層A1203及PET層膜之反射因數，其 以百分比繪於3 8 0至7 8 0 n m之光譜上。圖中顯示最小値發 生於500nm時，層膜厚度125nm可由該處計算而得。 第6圖爲更進一步表示各波長上反射因數百分比之曲 線圖’反射因數在約4 8 0 n m處有一最大値，表示反射波長 -10- 200535264 * 在480nm處之千涉程度最小，並係發生於層膜厚度 / 2 (即 2 4 0 n m )時。 第7圖所示爲一更進一步反射曲線圖，其中有一最大 値及二最小値，且該二極値可用以測量層膜厚度。 第8圖顯示六個爲特定波長之函數的反射曲線40 ’至 45’ ’且該六個反射曲線40’至45,係使用對應之感測器40 至45。該等圖形係由PET膜層上一約170nm厚之Al2〇3層 而得’且該層膜結構係由以氧爲反應氣體之鋁蒸鍍製程所 得。由圖可知，該等曲線已爲一者位於一者之上，此乃因 電子束蒸鍍器之調節已對應最佳化蒸度功率之故。 【圖式簡單說明】 本發明之一實施例將顯示於圖示中，並將更詳細說明 於下述中，其中圖示包含： 第1圖爲一合成材料層膜之蒸鍍設備的透視圖； 第2圖爲由第1圖所得之詳細圖，其顯示一鍍膜； 第3圖爲白光干涉之基本特性示意圖； 第4圖說明一表面及一邊界上反射之光波的干涉； 第5圖說明一鍍膜之反射爲光波長之函數的曲線圖； 第6圖說明一鍍膜之反射爲光波長之函數的進一步曲 線圖； 第7圖說明一鍍膜之反射爲光波長之函數的進一步曲 線圖；及 第8圖爲數個反射曲線圖，其中每一者用於一受鍍基材 之一不同位置處。 -11- 200535264 【主要元件符號說明.】 卜…蒸鍍沉積設備 2、3…處理室 4···饋出圓柱體 5···合成材料膜 6···上舉圓柱體 7···已鍍膜 8···蒸鍍沉積設備 9…埘渦 · 10…材料 1 1、12···電子束槍 1 6…板 22 -24…滾輪 25…鍍膜滾輪 26、27…導引滾輪 28、29…電子束 3 0 - 3 2··.箭頭 # 40-45···反射測量儀器 46-51…線 52…評估電路 5 3…傳輸器 54…光學傳輸器 5 5···接收器 60、70、74…基材 6 1、7 1…層膜 -12-200535264 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method as described in item 丨 of the scope of patent application and a device as described in item 13 of the scope of patent application. [Previous technology] Glass, foil, film, and other substrates are provided with thin film layers to obtain certain characteristics, wherein these thin film layers are added on top of synthetic material layers, etc. to make them not leaky gas. Regarding the addition of these layers, there are several methods currently available, of which only the sputtering and evaporation methods will be described here. Compared with the sputtering method, the deposition rate of the vapor deposition method is 10 to 100 times. A method of vapor deposition by an electron beam is generally known (EP09101 10A2), but the problem lies in the selective control of the electron beam rather than the measurement of the film deposited by the vapor deposition method. Furthermore, the way in which the film thickness can be measured for light absorption is also generally known, but the measurement method cannot be used on relatively thick and weakly absorbing film, because a weak absorption signal that may exist may be an interference effect. Affected (Quality Control and Inline Optical Monitoring for Opaque Film, AIMCAL Fall Conference, October 28, 2003) o [Summary of the Invention] Therefore, the purpose of the present invention is to solve the problem of adjustment of the coating method. The thickness of the absorbing coating material is constant in the width direction of a substrate. This problem can be solved according to the characteristics described in item 1 of the scope of patent application in this case. 200535264 Therefore, the present invention relates to a method and equipment for adjusting the film thickness of a coating material on a mesh material moving in the length direction. In the present invention, 'the thickness of the layer film is measured at several places in the width direction of the mesh material, and the coating equipment is adjusted so that the thickness of the layer film is fixed in the width direction of the mesh material. The thickness can be adjusted by changing the electron beam intensity of the vapor-deposited coating material, or by independently heating several vapor-deposition crucibles in the width direction of the mesh. When a transmission measuring instrument is present, the composition of the coating material can also be adjusted so that the composition is constant in the width direction of the mesh. The advantages of the present invention are obtained because the use of an electron beam vaporizer during coating allows the electron beam in the width direction of a substrate to be adjusted, so that the coating material can be uniformly distributed in the entire width direction of the substrate. . When measuring the thickness of most non-absorptive coating materials, the characteristics of the interference effect in the spectrum of the dielectric layer can be used to obtain the maximum and minimum 値, where the maximum and minimum 値 represent the optical thickness of the layer film Measure radon. The measured film thickness can be used to control the coating process. For example, the intensity and / or deviation angle of the electron beam on the material to be evaporated can be controlled. [Embodiment] FIG. 1 is a perspective view of a high-speed evaporation deposition device according to the present invention. The device includes two processing chambers 2, 3, of which a processing chamber 2 includes a feed-out cylinder 4 and a lifting cylinder 6 The other processing chamber 3 is provided with an evaporation deposition device 8, wherein the feed cylinder 4 is used for an unplated synthetic material film 5, and the lifted cylinder 6 is used for a coated synthetic material film 7. In the figure, the visible second processing chamber 3 has only a small part, and the larger part is omitted in the figure, so that the evaporation deposition equipment 8 can be seen more clearly than 200535264. The vapor deposition apparatus 8 includes a crucible 9 containing two materials 10 to be evaporated and two electron beam guns 11 and 2. The two deposition chambers 2 and 3 are connected with each other by narrow grooves, so that the to-be-coated films 5 are respectively moved from one processing chamber 2 or 3 to a specific other processing chamber 3 or 2 via the guide rollers 22 to 27. The pressure difference between the chambers 2 and 3 is about 102. A magnetic bias current unit is used to bias the horizontally incident electron beams 28 and 29 of the electron beam guns 11 and 12, where the electron beams 2 and 8 are perpendicular to the material to be evaporated, and the magnetic bias current unit is not shown. In the figure. A board is a part of the equipment, which is connected to most parts of the whole equipment, and is denoted by reference number 16. Most of these parts can be removed from the processing chamber 2 to make the processing chamber easier. maintain. The coating and plating of the synthetic material film 5 in the apparatus 1 will be explained as follows. A driving motor drives the lifting cylinder 6 in the direction of the arrow 30, and the end of the coating 7 is fixed. The uncoated film 5 leaves the feed cylinder 4 'via the guide rollers 26, 27 and is placed on the plating roller 25. At this time, the film 5 is bombarded by the material particles due to the heating of the coating material 10 by the electron beams 28 and 29, and the material particles are deposited on the film 5 by evaporation. The electron beams 2 8, 2 9 indicated by the arrows 3 1, 3 2 are moved back and forth in at least one direction so that the material 10 is vapor-deposited over the entire length of the crucible 9. In the above manner, the coating material 10 is formed over the entire width of the film 7, and each point on the width line can be set with a vapor deposition strength, that is, the vapor deposition rate of the coating material can be adjusted in the film width direction. It can be achieved by controlling the guidance system and the intensity of the electron beam. The number of the crucibles 9 may not be only one, and several evaporation crucibles may be set one after another, such as the one described in the DE402703 4 patent. 200535264 The second figure is an enlarged view from the figure ....- · Partial area map. This picture can clearly see the roller 23 and the film 5, where the film 5 is guided by the roller 23. The film 5 has been plated on its lower side. The thickness of the film is measured with several reflection measuring instruments 40 to 45, each of which includes a light transmitter and a light receiver. The measured reflected light signal is converted into an electric signal and conducted to the evaluation circuit 5 2 through the lines 4 6 to 5 1. The reflection measuring instruments 40 to 45 have their energy supply lines, but are not shown in the second figure. The evaluation circuit 5 2 is connected to an electron beam 28, 29. A control device (not shown) used by these electron beams, the i-degrees or deflection angles of these electron beams are adjusted as a function of the measured film thickness. If the thickness of the layer film 5 at a certain position in the width direction is too small, the evaporation rate below the position is increased so that the thickness of the layer film at that position is increased. The evaporation crucible can appear in several successively set patterns, which must be heated independently to make the evaporation variable in the width direction of the film 5. In addition to reflection measuring instruments 40 to 45, a transmission measuring instrument 53 can also be used for transmission therein. The transmission measuring instrument 53 includes an optical transmitter 54 and an optical receiver 44 in which the former 53 is located under the film 5 and the latter 44 is located above the film. The transmitter 54 and the receiver 55 are connected to the evaluation circuit 5 2 at the same time, and the evaluation circuit 5 2 also functions as an energy supplier. Reusing a single-color transmission measurement in the short-wavelength range (< 450nm, generally between 350 and 400nm), whether or not there is residual absorption in the layer film can be determined, which is easy to determine when different transmission chirps are determined. Therefore, this layer may have a transmission ratio of 5% at the left edge of the film (measured at a wavelength of 360 nm), and a transmission ratio of 8% and 7% at the center and right edges of the film. With the selective addition of oxygen, the transmission ratio of the film can be 8% and so on at all measurement positions, so that the oxidation state of the 200535264 clad film is equal everywhere. This method (for weakly absorbing layers) assumes that the thickness of the layer film is the same across the entire width of the layer film and can be used with the adjustment method disclosed in DE19745771A1. The reflection measurement system is also used to determine the automatic spectral position of the polarized light. The polarized light g is directly used to correct the electron beam control variables. With another transmission measurement performed by the transmission measuring instrument 53, information on the possible residual absorption of the layer film can also be obtained, where the absorption is obtained by the formula A = 100-RT, where R is the reflectance and T is the transmission The absorption of A is used to correct the variables used in the reaction gas flow during the coating process. The nominal A used by A is generally between 0% # and 10%. Thereby, the composition of the layer film can be adjusted so that it is constant over the entire width of the mesh. Figure 3 shows the principle of white light interference. A film 61 is placed on the substrate 60, and the geometric thickness of the film 61 is D. A white light beam 62 is incident on the surface of the layer film 61 at an angle. A part of the light beam 62 is reflected into the light beam 63, and the other part 64 of the light beam 62 penetrates the layer film 61 and is reflected into the light beam 65 only for the surface of the substrate 60. The two light beams 63, 65 are also shown as light waves 66, 67, which are sine waves, which can be mutually cancelled or lengthened with each other. φ Figure 4 shows the interference principle. Although it is not related to the light beam, it is related to the light wave; and the light wave is not incident at an angle, but is incident on a glass plate 70 perpendicular to a reflection device with a reflectance η 1.52 A MgF2 layer film 71 is formed thereon. The reflectance η of this film 71 is 1.38, and its thickness is a quarter (λ / 4) of the wavelength of incident light. The incident light wave 72 is reflected at the upper part of the surface of the layer film 71, and the amplitude of the reflected light wave 73 is smaller than that of the incident light wave 72. The light wave 72 is also reflected on the surface 74 of the glass plate 70 and superimposed on the light wave 73 into a light wave 75. Since the two light waves 7 3 and 75 have a phase difference of 180 degrees, 200535264, the same amplitudes of the two light waves cancel each other out. If these amplitudes are slightly different, the formed light wave 76 has a very small amplitude, which means that a film with a thickness of λ / 4 can be regarded as an anti-reflection layer. The cancellation of the waves 7 3 and 7 5 occurs only when the thickness of the layer film 7 1 is λ / 4. If the thickness is not the same, the amplitude of the formed wave 76 increases. If the wavelength is known, the relationship between the film thickness and the equation η · d = λ / 4 can be plotted by determining the maximum 値 and minimum 値 of the amplitude of the reflected light wave 76, where d is the geometric thickness and η is the refractive index. For example, if a minimum chirp occurs at λ 280 nm, the thickness of the layer film is I20 nm. A further relationship between the actual thickness of the thin layer and its longevity can be found in the patent DE 3 9 3 6 5 4 1 C2. In order to determine the wavelength at which the reflected light has a minimum amplitude, the wavelength of the light guided to the film 71 is changed, that is, the light varies between about 3800 nm and 7800 nm in the visible range. The change in this wavelength can be measured by a spectrophotometer (refer to Naumann / Schrader: Bauelemente der Optik, 5th edition, 1 9 8 7, 16.2, pp. 4 8 3 to 4 8 7 and DE 3 4 0 6 6 4 5 C 2 etc.). As shown in Figure 2, if the reflection is measured at several positions φ in the width direction of a film, then a spectrophotometer with several optical waveguides can be advantageously provided therein, and these spectrophotometers use the same The light source. In this way, reflection patterns at several locations can be measured with a single light source. Fig. 5 shows the reflection factors of the oxide layer A1203 and the PET layer film, which are plotted on the spectrum of 380 to 780 nm as a percentage. The figure shows that when the minimum radon occurs at 500nm, the film thickness of 125nm can be calculated there. Figure 6 is a graph that further shows the percentage of reflection factor at each wavelength. 'The reflection factor has a maximum chirp at approximately 480 nm, indicating the reflection wavelength -10- 200535264 * The degree of interference at 480nm is the smallest and occurs At the film thickness / 2 (ie 240 nm). Figure 7 shows a further reflection curve graph, which has a maximum chirp and two minimum chirps, and the bipolar chirp can be used to measure the film thickness. Figure 8 shows six reflection curves 40 'to 45' 'as a function of a specific wavelength, and the six reflection curves 40' to 45, using corresponding sensors 40 to 45. These patterns are obtained from an Al203 layer with a thickness of about 170 nm on a PET film layer, and the film structure is obtained by an aluminum evaporation process using oxygen as a reaction gas. It can be seen from the figure that these curves are one above the other, which is because the adjustment of the electron beam vaporizer has corresponded to the optimized steam power. [Brief Description of the Drawings] An embodiment of the present invention will be shown in the drawing, and will be described in more detail in the following. The drawing includes: Figure 1 is a perspective view of a vapor deposition equipment of a synthetic material layer film Figure 2 is a detailed diagram obtained from Figure 1, showing a coating; Figure 3 is a schematic diagram of the basic characteristics of white light interference; Figure 4 illustrates the interference of light waves reflected on a surface and a boundary; Figure 5 illustrates A graph of reflection of a coating as a function of light wavelength; FIG. 6 illustrates a further graph of reflection of a coating as a function of light wavelength; FIG. 7 illustrates a further graph of reflection of a coating as a function of light wavelength; and Figure 8 shows several reflection curves, each of which is used at a different location on a plated substrate. -11- 200535264 [Description of main component symbols.] Bu ... Evaporation deposition equipment 2, 3 ... Processing chamber 4 ... Feed cylinder 5 ... Synthetic material film 6 ... Lift cylinder 7 ... Coated 8 ··· Evaporation and Deposition Equipment 9… Vortex · 10… Materials 1 1,12 ·· Electron Beam Gun 1 6… Boards 22 -24… Rollers 25… Coated Rollers 26, 27… Guide Rollers 28 29… Electron Beam 3 0-3 2 ·· .Arrow # 40-45 ·· Reflection measuring instrument 46-51 ... Wire 52 ... Evaluation circuit 5 3 ... Transmitter 54 ... Optical Transmitter 5 5 ... Receiver 60 , 70, 74 ... Substrate 6 1, 7 1 ... Layer film-12-