TW200532300A - Driving voltage generation device and method for controlling driving voltage generation device - Google Patents

Abstract

A driving voltage generation device includes: a first selector section for receiving a plurality of first supply voltages and outputting one of the first supply voltages; a second selector section for receiving a plurality of second supply voltages and outputting one of the second supply voltages; first to fourth switches connected in series between the first selector section and the second selector section; a first specified voltage supply section for supplying a first specified voltage to a first interconnection node between the first switch and the second switch; and a second specified voltage supply section for supplying a second specified voltage to a second interconnection node between the third switch and the fourth switch. The first specified voltage supply section does not supply the first specified voltage when the first switch is on. The second specified voltage supply section does not supply the second specified voltage when the fourth switch is on. An output of the first specified voltage supply section has a lower impedance than that of the second selector section. An output of the second specified voltage supply section has a lower impedance than that of the first selector section.

Description

200532300 IX. Description of the invention: 1. [Technical field to which the invention belongs] The present invention relates to a control device for driving voltage of a load such as a liquid crystal display panel by an alternating current (AC) driving method and a control method for the device, in further detail. The invention relates to a driving voltage generating device constituted by a low withstand voltage circuit and a control method of the device. 2. [Prior art] In order to drive a liquid crystal display panel of a portable device (such as a mobile phone, etc.) by an AC driving method (such as a linear inversion driving method line Φ inversion driving method), an existing liquid crystal driving device is provided for controlling supply to A driving voltage generating device for a driving voltage of a counter electrode of a liquid crystal display panel. This driving voltage generating device reverses the polarity of the driving voltage in response to a predetermined time. (Conventional Drive Voltage Generation Device 8) <Structure and Operation> FIG. 12 shows the overall structure of a conventional drive voltage generation device 8. The device 8 includes a time control section 81, a VC0M voltage generating section 82, a VC0M arithmetic amplifier φ83, a smoothing capacitor C84, and an output terminal 85. The device 8 outputs drive voltages VC0MH and VC0ML to the opposite electrodes (not shown) of the liquid crystal display surface ^ in turn. The time control unit 81 controls the voltage values of the driving voltages VC0MH and VC0ML generated by the VC0M voltage generating unit 82 using the control signals Sa and Sb. ° VCOM voltage generating section 82 includes step resistors 801H and 801L, selection sections 802H and 802L, and switching transistors SW3 and SW4. . &quot; The ladder resistor 801H and the selection section 802H have a structure as shown in Fig. 2 (A). The step resistor 801H generates a plurality of supply voltages with different voltage values. The selection section is composed of a plurality of selection transistors. In addition, the selection unit 802Η selects the complex voltage generated by the step resistor 801Η in response to the control signal Sa from the time control unit 81. 5 200532300

One of them. In addition, the control signal Sa has the following characteristics: the loss of the γ family MQnilJ, ns〇1H-2 ((4ίv ™-;)) The supply voltage selected by the selection unit _ is output as the driving i, the step resistance view and the selection unit. For example, as shown in Figure 2⑻, the upper value "selected by 8 by the step resistor" is the complex Si: = L is driven by the selection unit _ and the selection of the switching transistors SW3 and SW4 is connected in series to the selection unit _ and the selection unit · T V (〇X 81 ^ TIMING ^ ^ Figure 'ί) „) makes the control signals S3 and S4 turn to“ high level, ”. Tell me ^^ The letter "%" thought that the switching transistors SW3 and SW4 would lead SW4 to open the door: Thunder I * Λ, the control signal%, not to switch off the switching transistors SW3, SW4. Therefore, the driving voltage from the selection unit is followed by the 802L-like dynamic voltage VC0ML supplied from the selection unit to the switching node NC between the switching transistors SW4 in turn. 11 83 output to output terminal 85

It ff drive voltage H, VCOM. The smoothing capacitor C84 is provided for smoothing the output variation of the prince 83, and is connected between the node _ and the ground node between the VC0M operational amplifier 83 and the output terminal 85. The output terminal 85 supplies the driving voltages VC0MH and VC0ML output by the operational amplifier VC0M to the phase dragon pole of the liquid crystal display panel (here, the panel negative ΐi is not the load capacitance of the liquid crystal display panel). And, at this time, it is satisfied that (reference voltage VREFL) ^ (reference voltage VSSH) $ (reference voltage VREFH); 200532300 and t ^ voltage VREFL) $ (tea test voltage VSSL) (reference voltage VREFH). (The voltage value of the reference voltage VREFH) Two "+ 5V" (the voltage value of the reference voltage VSSH, VSSL) = "0v", (the voltage value of the reference voltage VREFL) = "-5V". <Voltage value of the supply voltage 〉 The maximum voltage value of the supply voltage generated by ΐίΤί at point N80 is based on the reference section ΪΓυγομΙ 1 VREFH = &lt; ί + 5Γ ° The voltage value is “+ 5ν”. And, the voltage νΐ is hidden by the step resistance ί, dare, small For the voltage value, refer to Table 7F for the potential (reference) of the reference point 'point brain 1L_2'. Therefore, the minimum voltage value of the driving voltage TOML is a t) V 〇

<Financial voltage of the switching transistors SW3 and SW4> = The maximum potential difference between the terminals of the transistor SW3 is 10v ((reference voltage Xia reference voltage VREFL = -5V "). On the other hand, it is the same as the switching transistor The maximum potential difference across the switching transistor SW4 is also 1GV ((reference voltage VREFH: "+ 5Γ)-(reference voltage VREFm. Therefore, the switching transistors SW3 and SW4 need to have a withstand voltage of ίον. (Existing driving voltage Generating device 9) <Structure and operation> Fig. 13 shows the overall structure of another conventional driving voltage generating device 9. The device 9 includes a time control section 91 and a vcOM voltage generating section 92 instead of the time shown in Fig. 12 The control unit 81 is the same as the VC0M voltage generating unit 82. The other structures are the same as those of FIG. 12. The time control unit 91 uses the control signal Sa and the amplitude information Sc to control the driving voltage vcoMH generated by the vcoM $ voltage generating unit 92, The voltage value of vcOM. The amplitude information Sc is a voltage (amplitude voltage approximate FM) having a voltage value corresponding to the driving voltage vcOM and the amplitude of the driving voltage vcOM. The VC0M voltage generating unit 92 includes a supply operational amplifier 901, Selection for operation 7 200532300 The device 902, the supply transistors T903-1 to T903_4, and the resistors R904 and R905 replace the ladder resistor 801L and the selection unit 802L shown in FIG. 12. The selection operational amplifier 902, the supply transistor T903-1, and the resistor R904 A voltage-current conversion circuit is configured. Therefore, a supply current having a current value corresponding to the voltage value of the amplitude information Sc (amplitude voltage VREFM) flows through the supply transistor T903-1 and the resistor R904. Since the supply transistor T903-1 And T903-2 constitute a current mirror circuit, and since the supply transistors T903-3 and T903-4 form another current mirror circuit, the supply current flowing through the supply transistor T903-1 flows through the resistor R905 and Supply transistor ^. T903-4. Therefore, the driving node VC0ML is generated at the interconnection node N905L between the resistor R905 and the supply transistor T903-4. Lu (driving voltage VC0ML) = (driving voltage VC0MH)-(amplitude) Voltage VREFM) X (resistance R905) / (resistance R904) Next, by turning on the switching transistors SW3 and SW4 alternately, the driving voltage VC0MH from the supply operational amplifier 901 and the driving voltage VC0ML generated at the node N905L are alternately supplied. And the node NC, thereto satisfied: (reference voltage VREFL) ^ (reference voltage VSSH) $ (reference voltage VREFH) · and (a reference voltage VREFL) S (refer to the VSS voltage) $ (reference voltage VREFH). φ Specifically, (the voltage value of the reference voltage VREFH) = "+ 5V", (the voltage value of the reference voltage VSSH, VSS) = "0V", (the voltage value of the reference voltage VREFL) = "-5V". <Voltage value of the supply voltage> ^ The maximum voltage value of the supply voltage generated by the step resistor 1Η is represented by the potential of the reference node N801Η-1 (reference voltage VREFEh "+ 5Γ). Therefore, the maximum voltage of the dynamic voltage VC0MH in the% zone The value is “+ 5V”. In addition, the minimum voltage value of the driving voltage VC0ML generated by the node N905L is represented by the potential of the reference node N901L-5 (reference voltage VREFL = “-5V”). The voltage is the same as that of 200532300. The transistors SW3 and SW4 must have a withstand voltage of i OV. [Patent Document 1] JP 2003-216256 III. [Content of the Invention] A problem to be solved by the invention— However, the existing driving voltage generation device shown in ® 12 can be reduced to the driving voltage V (XML Thunder Letter, ni 2 power, the plural choice of the difference between the two options (:: ί ™ v) (((+ fvt ^ \ REFL) ΗΛ 'ϊ f value, 5V ((+ 5V)-(〇V)), 5V included in the selection section)) (that is, its absolute maximum rating, ΐ51ϋν) ° other —Aspect 'When the switching transistor SW4 is switched from off to on The potential of the guanxi point _2L may increase to Hedian ㈣ 册 0 + φ, /, the selection section 802H Similarly, the selection included in the selection section 80 乩 ίίΐ ί + + has the ability to bear rain. As such, select The surface and other 2L L must have the same voltage withstand voltage circuit structure (high withstand voltage circuit). And the surface of the ancient 3.2 gas crystal ^ is the area of the low withstand voltage crystal. The specific i is 0V of the transistor The area is about 5V, and the electric power is' assumed that the driver Lai H and Guan L have 64 different power hours and the selection part that is not shown in Figure 12 _ The situation is caused by the selection of the Nai Li 5v transistor ^ In contrast, the face of the selection section shown in FIG. 12 = ^ said the need for the ancient ancient sword ^ ^ '5 mobile phones and other high-definition liquid crystal display panel belongs to those who LCD display # panel of high-definition To increase the voltage level of the driving power 1 # Αβ, Γ · να) Μί (that is, the number of t and voltages generated by the step resistors 801Η and 801L). As the number of supply voltages increases, The number of selective transistors included in the Lion Department 8 catties 9 200532300 802L has also increased. As such, with the high definition of LCD panels, The circuit scale of the dynamic voltage generating device also increases, so it is important to reduce the circuit scale of the driving voltage generating device. In the driving voltage generating device 9 shown in FIG. 13, the potential of the node N9055L may increase to "+ 5V ". Therefore, the supply transistor T90-3-4 needs to have a withstand voltage ((+ 5V)-(-5V)) of 10v. In addition, the supply transistor T90-0-2, T90-03-3 The potential difference between the two ends may become "(reference voltage VREFH)-(reference ♦ VREFU", so the supply transistor 1-2, τ_-3 must have a withstand voltage of 1 (^ ((+ 5V)-(-5V) ). Furthermore, in the current mirror circuit composed of the supply transistor T903-j and the supply transistor T903-2, it is preferable that the supply transistor T903-1 and the supply transistor T903-2 have The same current characteristics and reasons: The supply transistor T903-1 needs to have a withstand voltage of ιον ((+ 5V) — (-5V). The 5-step dagger may also become (multiple) due to the difference between the two ends of the supply operational amplifier 9G1. (Reference voltage VREFH)-(reference voltage VREFL) ,; therefore, 佴 仏 ΐΐ 2901 must be composed of a transistor with lov voltage. For example, i, j 2H, supply amplifier 901 and supply current generator (select With ί ΐ ί &amp; 902, supply transistors T903_1 to T903_4, and resistance legs, R905) &amp; must be a circuit structure with high voltage resistance (high voltage circuit η 5, the higher the voltage resistance of the transistor, the transistor The slower the reaction speed. The voltage difference is: the deviation of the body in the manufacturing process (process deviation) is greater than the low withstand voltage. Γ ^ + 1 'is formed by the current characteristic difference of the current mirror circuit composed of a high withstand piezoelectric crystal. The current mirror circuit. Therefore, the drive 'It is difficult to accurately generate the corresponding control signal Sa and amplitude information Sc. Therefore, with regard to the operational amplifier, the driving ability (response speed) using a high-voltage transistor is lower than using a low withstand voltage. The object of the present invention is to provide a low withstand voltage. Circuit driving ~ means for solving problems — 200532300 According to the present invention, the _ part, the second selection part, and the third drive generation device include: the i-th selection predetermined voltage supply part. The first switch, the first] predetermined voltage supply part, and the second 1 part of the supply voltage, receiving a plurality of supply voltages and outputting the connection to the second supply power] Selecting the department to wash the fan ... brother] to the brother 4 opening and closing in series the first] switch and the second first regulation The voltage supply unit supplies the i-th specified voltage to the M-connected point. The second provides the second specified voltage ^. The second interconnection node between the third switch and the fourth switch is supplied to the second = 2 _. The second switch is connected between the off. When the second switch is connected to the second switch and the fourth switch is on, · 1 is specified between the two parts. When the first on switch is on, the second is not Supply No. 1 _. When No. 4 5 _ give The input and output of the ministry are _. The 'suppliers' generated by the 1st and 3rd interconnection nodes will be strong, and the switches between the 3rd and 3rd switches will be turned on in turn, which can make f / f redundant. For example, If the output of the second on-set voltage supply unit or the output of the i-th regulation or the output of the second prescribed voltage supply unit is made, the input of the 2 selection unit and the output of the second unit are here. Turn on and turn the second switch off (change 4 to open T to turn on the second switch and turn ^ two first, 刖, turn off the first switch in advance, you can The output impedance of the first specified voltage supply section is supplied to the output impedance of the first specified voltage supply section. The impedance of the second selection section is lower than the round reactance of the second selection section: = 200532300 The potential at the interconnection node is stabilized at the voltage of the first specified voltage, making the first 1 and 2 _ are turned on and the 3rd switch is turned off ^ = the state of the output of the part is supplied to the 3 interconnect node. Previously, the switching impedance of the fourth switching voltage supply unit was lower than that of the first option. The stability of the P-wheel's impedance ′ called 2 interconnected nodes ΐ ΐ Ϊ i = ′ By setting the voltage value of the first predetermined voltage to an appropriate value (for example, it can be composed of a low-withstand piezoelectric crystal). In the same way, the 邛 r ^ rriir ^ brothers choose their respective withstand voltage, thereby reducing the circuit scale. The second step of the thunder generation device further includes: the first step resistor 1 ΪΪΪ: the step ladder resistor, connected in series to receive the first reference Lai Ϊΐ ί, where N is a natural number) the first power supply ″ the second ″ Step resistance ίΪίΪΪί 2 The 3rd reference node of the 3rd reference voltage and the 2nd 22nd receiving the 4th reference voltage = ^ produces M pieces of different electric dust levels (M is a natural number) The two resistances generated by the ladder resistance: one of the voltages.-The first input section i and the first input section of the first regulation above are connected to the second input that receives the aforementioned second specified voltage. Between the point and the second interconnection node. When the aforementioned 丨 _ is turned on, the 52nd 200532300 is turned off. When the aforementioned 4th switch is turned on, the 6th switch is turned off. From switching the state from the second selection to the connected node to turning on the second node and turning on the 3rd f :; off, if the 5th switch is turned on first, the second interconnection node can be switched from off when the 2nd switch is switched off. Specified voltage. Similarly, with ί, =: 互连 should be switched to the state of the third interconnected node so that the first open, before the G open; state, turn on ^ in advance. 3 Before the switch is turned off and switched on, the second regulation is supplied to the second interconnection node. The on-resistance of the aforementioned transistor is smaller than the aforementioned second step resistance. The on-resistance of the switch 6 is smaller than the aforementioned step resistance. In the control device of the i-th region, the output impedance of the supply to the first interconnection node can be lower than that of the second selection part. Similarly, the impedance capable of outputting the second specified voltage of the second one is lower than the aforementioned first reference which is higher than the aforementioned second reference. The second reference voltage is the fourth reference voltage. The aforementioned first specified voltage satisfies: (No. 1 voltage) ^ (No. 1 specified voltage) $ (No. 1 reference voltage). The aforementioned second test iif satisfies: (the fourth reference voltage) $ (the second prescribed voltage) $ (the third parameter is the same as the driving voltage generating device described above, which can make the potential difference between the turn-in and the if-out side of the first selection section). It is smaller than that in the prior art. Similarly, the potential difference between the input side and the output side of the 2 kth option can be made smaller than that in the prior art. One ftf, the aforementioned first step resistor includes N first taps ( ΐ_〇Ν ΐ 接头 t connector outputs the aforementioned N supply voltages. The aforementioned second step resistor includes M = Z as a connector. The M second tap connector outputs the aforementioned M supply voltages. The aforementioned flute 9 ^ ladder resistor contains a The first tap. The aforementioned second selection section includes M k-selective transistors. The M second-selective transistors correspond to the aforementioned second PJT resistors. 13 200532300 Γ ”The first selectable transistors are connected in series. Correspondingly, ΐΓ; riTi? Generating device further includes a control section. In the control section mode, the control section 1, 4 and the 6th switching transistor ^ ^ Said in the second mode 'Control section' Turn on the front switch transistor 2 and turn off f, and enable the second, fourth, and fifth switch transistors Turn on, before the control unit makes the aforementioned second, second, and sixth fourth modes, the control unit SSI㈡ = turns off the second, fourth, and fifth switching transistors, and the six switches are turned on. And select the Ministry of Production ^ assembly and editing: the first selection and output of the second regulation of the second regulation of the second regulation ^ 1 regulation of the Ministry 'ί? Ϊί ^ &quot; ίίίί ^ 1 〇 # ϊ The line is connected to the supply current generation unit and the first 4 off. The first resistance, the matching node is located between the second node of the second wiring. The clamp circuit = 1 wiring 'limits the potential of the first wiring to a specified range ^ The power supply unit to the first switch And the second switch! Interconnect node dry flute) 2 constant voltage supply unit, to the third switch and the fourth switch; the second job. The first switch is connected to the first selection miscellaneous 2 switch The second switch is connected between the first and third switches, and between the second and fourth switches. The fourth switch is connected between the current generator. When the first switch is on, the first: 14 200532300 specified voltage. When the 4th Lai is turned on, the 2nd specified voltage supply unit is not equal to the 2nd specified Lai. The output impedance of the first county supply unit is lower than the supply. The impedance of the output section. The output impedance of the second specified voltage supply section and the output impedance of the low-selection section. In the aforementioned driving voltage generating device, the voltage between the input side and the output side of the supply current generating section can be adjusted. The potential difference is smaller than the potential difference in the prior art (for example, a low current-resistant crystal can constitute a supply current generating unit). By this, the circuit scale can be reduced.

★ Preferably, the driving voltage generating device further includes a j-th differential amplifier circuit and a first differential amplifier circuit connected between the first node of the first wiring and the first ^ selection section. The supply current generating unit includes a first and a second supply resistor, a second resistor, a second differential amplifier circuit, first and second clamp transistors, and a second resistor and a second resistor. Connected in series between the 丨 reference node and the 2j node. The second differential amplifier circuit is connected to the interconnection node between the i-th crystal and the second resistor at the input terminal of the second differential amplifier, receives the aforementioned vibration signal at the other input terminal, and the f-output terminal is connected to the gate of the first supply transistor. . The second supply transistor, the first clamp transistor, and the second clamp transistor are connected in series between the second node on the first line and the aforementioned first reference node. The above-mentioned second supply device Chu Yuyue Tilian _ the first reference section depends on the gate voltage between the green transistor and the gate electrode. The first transistor is connected between the i-th supply transistor and the second clamp transistor, and receives the first ridge at the gate. The second clamp transistor is connected between the second node located on the second wiring and the i-th clamp transistor, and receives a second bias voltage at the gate. In the above-mentioned "j" drive voltage generating device, the first and second supply power can be made equal to 耐? Lower than in the prior art. Therefore, since the process deviation of the first supply transistor and the second supply transistor can be reduced, the difference in current characteristics between the i-th supply transistor and the second supply transistor can be reduced. Furthermore, since it is possible to change the respective drain voltages of! 4th, 1st, and 2nd supply transistors, it is possible to ease the dependence of the wire voltage. As a result, a driving voltage having a voltage value corresponding to the amplitude information of 15 200532300 can be generated with high accuracy. Preferably, the voltage wire of the first bias voltage indicates that the voltage between the gate and the source of the first record is equal to the electrical waste value of the amplitude information. Preferably, the voltage value of the second bias voltage is equal to the gate-source voltage of the second clamp body. Gan only use electricity every day (the first step is equipped with the first wire amplifier circuit. The first differential amplifier circuit is connected between the first node of the first wiring and the first selection section. The current generating section It includes the first to fourth supply transistors, the second resistor, the first amplifier circuit, and the first to third clamp transistors. The first supply and the second resistor are connected in series to the i-th reference node and the second reference. Between the nodes. 2nd_differential amplifier circuit, one of its input terminals is connected to the interconnecting node of the supply transistor and the 2nd resistor, and the other input terminal receives the aforementioned amplitude, and at the output, the The gate of the first supply transistor is connected. The second supply transistor, the first and second clamp transistors, and the third supply transistor are connected in series between the reference node and the third reference node. The third clamp transistor and the fourth supply transistor are connected between the second node and the third reference node located in the aforementioned second wiring. The second supply transistor is connected to the 丨 reference node and the 丨Between the clamping transistor, the gate receiving the first supply transistor at the gate The generated gate voltage. The first clamp transistor is connected between the first supply transistor and the second clamp transistor, and receives the first bias voltage at the gate. The second clamp transistor is connected to the first Between the clamp transistor and the third supply transistor, a second bias voltage is received at the gate. The third supply transistor is connected between the second clamp transistor and the third reference node. It is connected to its drain. The third clamp transistor is connected between the second node and the fourth supply / use transistor located in the aforementioned second wiring, and receives a third bias voltage at the gate. The fourth supply transistor is connected Between the third clamp transistor and the third reference node, the gate receives the gate voltage generated by the gate of the third supply &quot; crystal. The aforementioned driving voltage generator can make the first to the first The voltage resistance of the 4 supply transistor is lower than that of the conventional technology. Therefore, the difference between the current value of the current flowing through the first supply transistor and the current value of the current flowing through the fourth supply transistor can be reduced. 16 200532300 The voltage between the gate and the source of the sweet-bit transistor is equal to the voltage between the top ten sources The above-mentioned second and third body of the M pole are difficult to retighten-the secret face and / or the box 3 sweet-bit transistor circuit depends on the generation device-further includes: a first differential amplifier, a first differential amplifier circuit connected to the foregoing The first selection unit and _ Γ open the second differential circuit _ 'connect the aforementioned second circuit voltage driving device further-including: the first differential amplifier wiring ^ nth ^ circuit. The first differential amplifier circuit connection It is located between the first to the first selection section. The second differential amplifier circuit is connected. The driving voltage is controlled by a "state" control method. The driving voltage is generated by a sixth switching transistor. The selection section, the second Selection section, among the first to i-th supply voltages, J: Select output of one of the connections-. 1st to 4th switches, connected in series ί =; = ΐ; ί: = .; 5 switches, connected to the first 1 mutual point and receiving the second rule i. Level 6 'is connected to the second interconnecting section between the &quot; Gate * and the 4th input node. The impedance of the bit voltage of the second interconnecting node is "the second specified power supplied by the fifth switch. The impedance of the specified voltage is lower than the impedance = resistance t via step 6, step 2 (a), step (b), which is supplied in the second line. Then, the control method of the second and sixth switch off and step ( D). In step (A), the second switch 6 is turned off and the 3rd, 4th, and 5th switches are opened. Ία): «3 (B) ^ ^ The switch is turned on and the second switch is turned on. Next, turn off the 1st and 6th 17 200532300 &amp; ⑴ ^ 4 and 5th Lai. When switching from step (B) to step 3 (^ 关 IfIf ^). In step (D) 'make the second switch The control method turns on and off at the same time ^ ”The control method of the person who makes the 4 4 and the 6 switch simultaneously makes the 1 and 6 switches on the money driving dragon production line, ll3 (^ 3) 2 rnl ^: In the first regulation Erlei Interconnection Node supplies the first specified voltage. In step (1), the voltage is being supplied to the first interconnection node, and the lightning of the first interconnection node is stabilized at the voltage value of the first specified voltage. In step (β), ^ = should be the output of the first selection section. In addition, to the second interconnection node =% (all f 2 ⑼ ', because the second prescribed voltage is being supplied to the second interconnection section ΐ' m, the potential of the connection node is stabilized at the second regulation voltage, and the voltage value is specified in liH1 The voltage value of the dragon (second prescribed voltage) is set to an appropriate value, = potential difference. Therefore, 'the first selection portion and the second voltage 34 can be reduced, and since the respective withstand voltage of the first and second selection portions can be reduced, As a result, the circuit scale of the driving voltage generating device can be reduced. As described above, since the potential difference between the middle side and the wheel exit side of the first selection section (second selection section) can be made smaller than that of the conventional technology:

^ 1 2 0,, b: Z g selects the respective withstand voltage, so that the circuit specification for driving the Lai generator can be reduced. [Embodiment] The following describes the embodiment of the present invention in detail with reference to the appended items. In each case, the same or equivalent parts are denoted by the same symbols, and descriptions are not repeated. (First Embodiment) &lt; Overall Structure> Fig. 1 shows the overall 200532300 structure of a driving voltage generating device 1 according to a first embodiment of the present invention. The device 1 includes a time control section 11, a VC0M voltage generating section 12, an operation amplifier 13 for vcOM, a smoothing capacitor C14, and an output terminal 15. This device controls the driving voltage W: 0MH, VC0ML for driving the liquid crystal display panel by the parent &gt; mystery method (linear inversion method). In other words, the device 1 outputs a driving voltage or vCOML to the opposite electrode (not shown) of the liquid crystal display panel in response to the time signal TmiNG. The time control section 11 uses the control signal Sa to control the voltage value of the driving voltage VCOMH output by the vcom voltage generating section 12. Further, the time control unit u uses the control signal Sb to control the voltage value of the driving voltage VC0ML output from the Μ voltage generating unit 12. In addition, the time control unit Π outputs control signals S1 to S6 in response to the source. The timing signal TIMING indicates that the driving voltage of the opposite electrode of the crystal display panel is switched from the driving voltage vc0 to the tangential voltage VC0ML (or switched from the driving voltage VC0M1 to the driving voltage ^) The voltage generation function is based on the Sa and Sb input from the __ Department η, The driving voltages VC0MH and VC0ML are generated, and the control signals S1 to S6 output by the vcOM voltage output 11 are output. The operational voltage 13 is used by the operational amplifier 13 to output the driving voltages VC0MH and VC0ML supplied by the smart unit 12 to the output terminal 15. In order to smooth the rotation of the VC0M op amp 13, the smoothing valley C14 'is set and connected between the VC0M op amp 13 and the output node N14 and the ground node. Between the sub 15 and the output Ic = 运 ΐί The output of 3 is driven by the driver, the phase of the crystal display panel, Wei Ji (here the panel load C (LC) is not the load capacitance of the liquid crystal display panel), &lt; the internal structure of the VC0M voltage generating section 12 &gt; section 12 includes: step resistors 1G1H, 101L, selection sections 102H, 102L, and switching transistors SW1 to 泖 6. The ladder resistor 101H is connected to the reference voltage receiving reference voltage Ligang Π M reference voltage VSSH The orbital H-2 of 19 200532300 generates a plurality of supply voltages with different voltage values. The selection section 102H selects one of the plural numbers of two produced by the step resistor 1010H in response to the control signal Sa from time 11. ^ ... The step resistor 101L is connected to the table N101L-1 that receives the reference voltage VSSL and the reference node L_2 that receives the reference voltage L1 = the supply voltage with different complex values. The selection department responds from time ^ 11 of The control signal ^ Sb selects one of the complex numbers ^ = generated by the step resistor. The switching transistors SW1 to SW4 are connected in series to the selection section 丨 〇2 {{and the selection section} n. By the selection surface The selected supply voltage should be switched to the switching transistor SW. The supply voltage selected by the selection department = the voltage VC0ML is supplied to the switching transistor SW2. The switching transistor is connected &amp; the selection unit 102H and the switching transistor Between SW3, the control strip 5 tiger S1 from the time control is received at the pole. The switching transistor SW3 is connected between the switching transistor SW1 and the switching crystal SW4, and the control signal from the time control unit u is received at the gate. Said body SW4 Connected between the switching transistor SW3 and the switching transistor, the gate receives a control signal S4 from the time control unit U.

= Between the switch transistor SW4 and the selected ministry, the control signal S2 of the ministry is received at the gate. ]] Saichi J. The switching transistor SW5 is connected between the switching transistor SW1 and the switch, between the node M and a predetermined voltage supply node _ = the control signal S5 of the control unit 11. The specified voltage supply node is removed (the gate is set at 21), the specified voltage is set to H °, the switch is turned on and off, and the interconnected node NL of the body SW2 is connected to the specified voltage, and the point between the points N103L is received at its gate. When the time control mode is “high level”, the switching transistor Xie is turned on, and when the spare control ## S1 to S6 are “low level”, the switching transistors 200532300 SW1 to SW6 are turned off. Here, the voltage value of each reference voltage satisfies: (reference voltage VREFL) $ (reference voltage VSSH, VSSL) S (reference voltage VREFH). In addition, the voltage values of the specified voltages VSETH and VSETL also satisfy: (reference voltage VSSH) ^ (specified voltage VSETH) $ (reference voltage VREFH); (reference voltage VREFL) S (specified voltage VSETL) $ (reference voltage VSSL). <Configuration Example of Step Resistor 101H and Selector 102H> FIG. 2 (A) shows a configuration example of the step resistor 101H and the selector 102H. The ladder resistor 101H includes N (N is a natural number) resistors R111H-1 to R111H-N. Resistance • R111H-1 to RllH-N are connected in series between reference node N101H-1 and reference node N101H-2. The N taps TAPH-1 to TAPH-N of the step resistor ι generate N supply voltages VdivH1 to VdivHN, respectively. The selection section 102H includes N selection transistors TI 12H-1 to TI 12H-N. The selection transistors TI 12H-1 to TI 12H-N are connected between the taps TAPH-1 to TAPH-N and the switching transistor SW1. Further, the time control section 11 supplies a control signal Sa to a gate of one of the selection transistors T112H-1 to T112H-N. The voltage value of the control signal Sa indicates “(reference voltage VREFH)-(reference voltage VSSH)”. By turning on one of the selection transistors T112IH to TI 12H-N, one of the N supply voltages VdivH1 to VdiνΗN is supplied to the switching transistor SW1 as the driving voltage VC0MH. As a result, a driving voltage VCCMH having N different levels with a large reference value VREFH is generated. <Configuration Example of Step Resistor 101L and Selector 102L> • FIG. 2 (β) shows a configuration example of the step resistor 101L and the selector 102L. The ladder resistor 101L includes N resistors R111L-1 to R111L-N. The resistors R111L-1 to R111L-N-are connected in series between the reference node N101L-1 and the reference node N101L-2. The N taps TAPL-1 to TAPL-N of the step resistor 101L generate N supply voltages VdivL1 to VdivLN, respectively. The selection section 102L includes N selection transistors T112L-1 to T112L-N. Select transistors T112L-1 to T112L-N are connected to the tap ttaPL-1 21 200532300 to TAPL-N and the switching transistor SW2. The time control unit n selects the transistor T112L-1. One of the gates to T112L-N supplies the control signal Sb. The voltage value of the control signal indicates "(reference voltage VSSL)-(reference voltage VREFL). By turning on one of the selection transistors T112L-1 to T112L-N, the N supply voltages VdivL1 to VdivLN are turned on. One of the voltages is supplied to the switching transistor SW2 as the driving voltage VC0ML. Through this, the driving voltage vc0ML having N different levels with the lowest level being the reference voltage VREFL is generated. <Resistance value> is usually generated at the driving voltage In the device, the step resistor has a higher resistance value in order to reduce the current flowing through the step resistor. For example, the resistance value of the step resistor 101H is large from about several hundred KΩ to about several MΩ (Megohm). In addition, the switch The on-resistance of the transistor SW5 can be significantly smaller than the resistance value of the step resistance by a ratio of 10. For example, the on-resistance of the switching transistor SW5 is about 50Ω. In addition, the on-resistance of the switching transistor SW6 is significantly the same as that of the switching transistor SW5 The ground value is less than the resistance value of the step resistance 101H. &Lt; The operation of the VC0M voltage generating section 12> Next, the VC0M voltage generating section 12 shown in FIG. 1 will be described with reference to FIGS. 3 and 4. Further, thereto, a voltage value of the reference voltage VREFH "+ 5V", the reference voltage VSSH, VSSL the voltage value is "〇v", the reference value of the reference voltage VREFL ~5V ". In addition, the voltage value of the predetermined voltage VSETH is “+ 4V”, and the voltage value of the predetermined voltage and ^ L is “−4Γ. In addition, the selection unit deletes the receiving control signal such as ^ selects a supply voltage having a voltage value of“ + 5V ”, and The selection control unit receives a control voltage Sb to select a supply voltage having a voltage value of "-5V". In other words, a driving voltage VC0MH having a voltage value of "+ f" is supplied to the node N102H, and ^ has "-5V The driving voltage VC0ML of the voltage value is supplied to the node howl. Eight-"At time t0-1: 1, the time control section 11 sets the control signals S1, S3, and S6 to a low level", and sets the control signals S2 and S2. S4 and S5 are "high level". Since the power-off crystals SW2 and SW4 are on, the driving voltage vcoML (−5V) is supplied from the selection unit i02L to the node NC via the points N102L and NL. Therefore, the potentials of the nodes ni02L, 200532300 NL, and NC are all "-5V" (Fig. 4 (B) and Fig. 4 (C)). On the other hand, since the switching transistor SW5 is on, the predetermined voltage VSETH is supplied from the predetermined voltage to the node N103H to the node NH. Therefore, the potential of the node cent is "+ 4V" (Fig. 4 (A)). Further, since the driving voltage vcoMH is supplied from the selection section 102H to the node N102H, the potential of the node N102H is "+ 5V". At time ti, the time control unit n sets the control signal S3 to "high level," and the control signal S4 to "low level". Since the switching transistor 5 is turned on, and the switching transistor and SW3 are also turned on, the node NC and the node NC are connected to a predetermined voltage and supplied to the node N103H via the node NH. Therefore, the potential of the node NC is changed from "-5V" to "+ 4V" (Fig. 4 (B)) and the potential of the Lang point nh is also changed. However, since the impedance of the predetermined voltage VSETH supplied from the predetermined voltage supply node N103H to the node NH is lower than the impedance of the driving voltage vcoML supplied from the selection section 102L to the node NC, the change in the node potential is smaller than that in the node [. In other words, the potential 1 of the node NH is set to the voltage value (+ 4V) of the predetermined voltage VSETH (Fig. 4 (A)). In addition, since the switch transistor SW1 is in an off state, the potential of the node N leg is also on the other hand. On the other hand, the switch transistor SW2 is turned on and off the switch ^ crystal ^ W4, so the driving voltage vc〇ML (−5V) The selection unit 100 should reach the node NL via the node N101L. Therefore, the potentials of nodes N102L and 虬 are both stable at "-5V". At time t2, the time control unit n sets the control signals S1 and S6 to “high level,” ii ^ S2, S5 to “low level”. Since the switching transistor SW3 is turned on and * 2, the crystal SW1 is turned on, so via the node N1 ·, NH, Selection Department Satoshi 22) and Figure 4⑻). Because of the impedance from the Selection Department_Total H: μL WH Voltage VC0 Bandwidth The resistance is fixed from the specified voltage supply node N103H to the day of the fixed electricity M VSETH impedance, so the potential of the node N1 改 can be changed to 'the potential of the shout point N1〇2 不会 will not be lower than the voltage of the specified voltage VSETH without jjp. On the other hand, since the switching transistor SW6 is on, the thunder is specified Ϊ Transformer 'Langlang point just 3L is connected to the node NL. Therefore, the potential of the node NL from "-5V,' ,, 'province (Figure 4 (C)). And, because the switching transistor is measured to be off, the potential of node N102L is stable at "_5V". The 'time control unit 11 sets the control signal S3 to the "low level, and the gate" high level "'. Since the switching transistor Na is turned on and = t ^ rf ′, the node NH and the node NC are connected to a predetermined voltage point N103L. Therefore, the potential of the node NC changes from "+ 5V," to "_4v," (Figure ()). In addition, the potential of the node NL also changes. However, because the impedance of the specified voltage from the specified voltage to the node is lower than the impedance of the drive voltage VC0MH from, to the point NC, the node is stable— / the potential change at the node NC is initiated. In other words, the potential of the node NL is known as the voltage value of the set voltage VSETL (-4V) (Fig. 4 (〇). On the other hand, the switch transistor SW3 is turned on and off by SW1, so the chicken power wastes 0MI | J : + 5V) is supplied from the selection unit 102H to the node leg via the node · 1H. Therefore, the potentials of the N102H and NH points at the puppet point are both stabilized at "+ 5V". At time t4, the time control unit 11 sets the control signals si and S6 to "low level,-," to "high level". Since the switching transistor SW4 is turned on and the switching transistor SW2 is turned on, the selection unit via The node N1 is connected to the node NC. Therefore, the potentials of the nodes nl and NC are both changed from "one 4Γ to two ίν_ί &gt; Γ4⑻ and Fig. 4 (c)). At this time, since the impedance i is supplied from the selection unit i02L, that is, the impedance of the driving voltage VC0ML of the N102L is higher than the impedance of the predetermined voltage Xia TL supplied from the specified voltage for the node _3L to the node NL, the potential of the node may Will change. However, the voltage value of the electric voltage of the node_L (-milk. On the other hand, since the switching transistor SW5 is = voltage, the regulated voltage supply node N103H is connected to the node NH. Therefore, the potential of the node NH changes from "+ 5V" It is "touch" (Fig. 4 (A)). In addition, since the switching transistor SW3 is turned off, the potential of the node ni0H is stabilized at "+ 5V". At time t5, the same operation as at time ti is performed. As described above, when the switching transistor SW3 is switched from off to on, the low-impedance voltage VSETH is supplied from the predetermined voltage supply node N103H to the node NH, so the potential of the node NH can be stabilized at the predetermined voltage VSETH. The voltage value. And, 24 200532300 Because when the switching transistor SW4 is switched from off to _, the voltage drifts from the specified voltage supply node to the node and supplies a few electricity.

The potential can be stabilized at the voltage value of the specified voltage VSETL. That is, J NL further, the specified voltage VSETH satisfies: (reference voltage VSSH) ^ (specification VSETH) ^ (so it can also make the selection difference included in the selection department less than "(reference voltage delete 0-(reference voltage Hf) The potential of the body is the same, because the specified voltage VSETL satisfies: (reference voltage V, L) $ (mosquito ly VSETL) g (refer to ^ to enable both ends of the selection transistor included in the selection unit ^) to be less than (Reference voltage VREFH)-(Reference voltage vrefl) ,. <Withstand voltage of the transistor>% In the aforementioned action, the potential difference between the node NH and the node NC is about 9V. The maximum potential difference between the node NC and the node NC is about 9V. In addition, the node_ The potential difference between h and the node leg, the potential difference between node N102L and node NL, the maximum voltage difference between the voltage confession section and the specified voltage supply node. NL is about IV. Therefore, 'the voltage resistance of switches SW5 and SW6 can be lower than that of switching transistor SW3. ^ Measured ^ SW2 absolute maximum ratings of transistors SW1, SW2, SW5, SW6). ^ Multi-spoon reduction switch Since the potential of the node NH can be stabilized at "+ 5Γ", so choose the Ministry of Congzhi (selection Body 4: ===== Yes. In other words, it can reduce The withstand voltage of the selection transistor of the selection unit 102Η is similar. Since the potential of the node NL can be stabilized at "-5V", the absolute maximum rating of the selection transistor included in the selection unit 1G2L must be higher than that. (( The reference voltage VREFH)-(reference voltage L)) is only required to be higher than 5V (the voltage value of the control signal Sb). In other words, it is possible to reduce the voltage of the selection section 10 °; the withstand voltage of the crystal. <Effect> 25 200532300 too Under the existing linoleum generating device shown in FIG. 12, in the face pressure generating device 1, the selection unit 1G2I ^ can be selected to be the size of the circuit. The body is low_transistor. Through this, it can be reduced and further In order to stabilize the potential of the selection voltage Satoshi H (transition voltage surface L) contained in the selection section Satoshi (selection section 102L) to (second embodiment) <overall structure> the second embodiment of the inventor f 5ΐίί invention The overall form of the driving voltage generating device 2, U 冓. The device 2 includes: the time control unit u, the output terminal 15 and the switching transistor SW1 爿 SW6 shown in the figure! The blue voltage generating unit 22, VC0MH is amplified by the operation. · L _ amplifier 23L, and flat _ = VC0M power generation unit 22 The driving voltages VC0MH and VC0ML output by the control signals Sa and Sb output by the corresponding time control unit u are output from the VC0MH operational amplifier 23H to the switching voltage SW vc by the operational amplifier 23H. The operational amplifier 23l for the ML is driven by the driving voltage vcoml generated by the voltage generating unit 22 to the switching transistor SW2.

In order to smooth the output variation of the op amp 23H for VC0MH, a smoothing capacitor C24H 'is provided and connected between the node N24H and the ground node between the VC0MH operational amplifier 23H and the switching transistor. In order to smooth the output variation of the vcOM operational amplifier 23L, a smoothing capacitor C24L is provided and connected to the node N24L and the ground node between the vcOM operational amplifier 23L and the switching transistor SW2. The switching transistors SW1 to SW4 are connected in series between the node N24H and the node N24L. The connection relationship of the switching transistors SW1 to SW6 is shown in Figure 1. 26 200532300 μpoint = output terminal 15 is connected to the interconnection of the switching transistor SW3 and the switching transistor SW4 &lt; Internal structure of the VC0M voltage generating section 22> FIG. 5 The VC0M voltage generating section 22 shown includes: the step resistors 101H and 101L shown in FIG. 丨, and the selection sections io2H and io2L. The connection relationship between the ladder resistor loin and the selection section 102H and the connection relationship between the step resistor 101L and the selection section 102L are shown in Fig. 1. The supply voltage selected by the selection section 102H is supplied as the driving voltage vcomh to the operational amplifier 23H for VC0MH. The supply voltage selected by the selection unit 102L is supplied to the operational amplifier 23L for VC0ML as the driving voltage VC0ML. <action>

The operation of the driving voltage generating device 2 shown in FIG. 5 will be described below. First, as in the first embodiment, the time control unit η outputs the control signals Sa, Sb 〇 ° ~ Its -person, the same as in the first embodiment, the VCM voltage generation unit 22 responds to time control. In the control signal Sa of the section 11, the selection section 102H selects one of the plural supply voltages generated by the step resistor 101H. The supply voltage selected by the selection section 102H is output as the driving voltage VC0MH. Further, as in the first embodiment, the selection unit 102L selects one of the plural supply voltages generated by the step resistor 101L in response to the control signal &amp; from the time control unit u. The supply voltage output selected by the selection section 102L is used as the drive voltage vcqml. Next, the operational amplifier 23H for VC0MH outputs the driving voltage VC0MH supplied from the selection section 102H to the switching transistor SW1. In addition, the VCOM operational amplifier 2 乩 outputs the driving voltage VC0ML supplied by the selection section 102L to the switching transistor ^. Next, the switching transistors SW1 to SW6 perform the same operations as those in the i-th embodiment. As a result, the driving voltage VC0MH output from the operational amplifier 23H for VC0MH to the switching transistor 以及 and the driving voltage VC0ML output from the operational amplifier 23L for VC0ML to the switching transistor SW2 are alternately supplied to the output terminal 15. <Effect> As described above, since the potential of the node N24H can be stabilized at "+ 5V", the operation amplifier 23H for VC0MH can be constituted by a low-withstand voltage crystal. In addition, since the potential of the node N24L can be stabilized at "-5V", the operational amplifier 23L for VC0ML can be constituted by a low withstand piezoelectric crystal. Therefore, the circuit scale can be reduced. In addition, the driving ability (response speed) of the operational amplifier 23H for VC0MH and the operational amplifier 23L for VC0ML can be improved. (Third embodiment) <Overall structure> Fig. 6 shows the overall structure of a driving voltage generating device 3 according to a third embodiment of the present invention. The device 3 includes a time control section 31 and a vcOM voltage generating section 32, instead of the time control section 11 and the vcOM voltage generating section 12 shown in FIG. Other than that, the structure of φ φ is the same as that in FIG. 1. ’,

The inter-control unit 31 uses the control signal Sa and the amplitude information &amp; to control the voltage values of the drive voltages vc_ and vcOM that are output from the vcOM voltage generator 32. Amplitude report Sc is a miscellaneous electric ship with a potential difference corresponding to the driving voltage vc〇MH generated by 32 kg of vcom voltage generating unit (amplitude deleted. S sr = 1 due to the time signal of the wire from the outside, ng, The output control and firing of the 32 mesh correction unit 31 loses $ 1! 1 signal Sa and the vibration field if report Sc, and generates the driving voltages vc_, vcOM. ^ ^ The production unit 32 responds to the time control unit 31. Call for electric dust VC0MH or VC0ML. Feed out control numbers S1 to S6, output drive &lt; internal structure of VC0M voltage generating section 32> 102Η and switching transistor SW1. Net °. Circuit and connect to selection section 28 200532300 Select The operational amplifier 302, the supply transistor T3. 03-j, and electricity constitute a voltage-current conversion circuit. The selection of the operation amplifier 302 is input to the gate of the supply transistor T303-1, and the square input end thereof = Interconnect node N3〇3 between crystal T303-1 and resistor R304, and receive the amplitude information Sc (amplitude voltage) from the control unit 31 in the other. The transistor T303-1 and resistor R304 are connected in series. Connected to the reference node of the receiving reference Dust ^ reference node 1 and the receiving reference voltage VSS-2 The supply transistor T303-2, the sweet bit transistors T311-1 and T311-2, and the supply transistor T303-3 are connected in series to the reference node N301-3 receiving the reference voltage and the reference node receiving the reference voltage VREFL ] V301-4. The supply transistor T303-2 is connected to the reference node N301 -3 and the clamp transistor I # πn =, and its gate is connected to the gate of the supply transistor. Sweet bit ^ T311-1 is connected between the supply transistor T303-2 and the clamp transistor T311-2, and its gate is connected to the bias supply node N311- 丨 which receives the bias voltage Vbiasl. The clamp transistor T31b 2 is connected To the clamp transistor T311—! And the supply transistor T3〇3_3, and its gate is connected to the bias supply node N311-2 that receives the bias voltage Vbias2. The supply transistor T303-3 is connected to the clamp transistor Between the crystal T311-2 and the beam test node N301-4, its gate is connected to its non-pole. The resistor R305, the clamp transistor T311-3 and the supply transistor T303-4 are connected in series to the supply operational amplifier 3 〇1 node N305H between switching transistor SW1 and reference node N3 0-5 that receives reference voltage VREFL The resistor R305 is connected between the node N305H and the clamp transistor T311-3. The clamp transistor T311-3 is connected between the resistor R305 and the supply transistor T303-3-4, and its gate is connected to The bias supply node N311-3 receiving the bias voltage Vbias3. The supply transistor T303-4 is connected between the clamp transistor T31 丨 -3 and the reference node N301-5 receiving the reference voltage VREFL, and its gate is connected to the gate of the supply transistor T303-3. The transistors SW1 to SW4 are connected in series between the node N305 and the node N305L. The node N305L is an interconnection node between the resistor R305 and the clamp transistor T311-3. The connection relationship between the switching transistors SW1 to SW6 is shown in Figure 丨. 29 200532300 The potential of the old node N305H is higher than that of the reference node 2. The second tube: ~ q) The clamped circuit is connected to the power supply between the amplifier # 301 and the switching transistor SW1. Repeated VSS node swelling between -2. The money received and studied ^ ^ Here, the voltage value and amplitude s (amplitude voltage VREFM) of the reference voltage vss satisfy: (reference voltage VREFL) $ (reference voltage vss) ^ (reference voltage VREFH); (reference voltage VSS) $ ( Amplitude voltage (reference voltage VREFH).

Next, the operation of the VCOMM dust generator 32 shown in FIG. 7 will be described. And, for reference, the voltage value of the voltage VREFH is "+ 5v", the voltage value of the reference voltages VSSH, vss is 0V, and the voltage value of the reference voltage VREFL is "-5V". In response to the control signal from the time control section 31, the selection section 102 selects one of the plural supply voltages generated by the step and the resistance 101H. The supply operational amplifier 301 outputs the driving voltage% 0] ^ selected by the selection unit 102a to the switching transistor SW1. On the other hand, the selection operational amplifier 3Q2 receives amplitude information Sc from the time control unit 31. A supply current IrefM having a current value corresponding to the voltage value of the amplitude information &amp; (amplitude voltage vrefFM) flows through the supply transistor T303-1 and the resistor R304. The supply current IrefM satisfies the following (Equation 1). ^ (Supply current IrefM) = (Amplitude voltage VREFM) / (Resistance R304) (Equation 1) Second, the supply transistor T303-2 receives the gate generated by the gate of the supply transistor T303-1 at its gate. Pole voltage. Therefore, the supply current irefM flows through the supply transistor T303-2, the clamp transistors T311-1 and T311-2, and the supply transistor T303-3. ° Secondly, because the supply current IrefM flowing through the supply transistor T303-3 passes through a current mirror circuit formed by the supply transistors T303-3 and T303-4, it flows through the supply transistor T303-4. Therefore, the driving voltage VC0ML is generated at the node_5L. The driver 30 200532300 dynamic voltage VC0ML satisfies the following (Equation 2). ^ Voltage 0 = (driving voltage VCQMH)-(supply current IrefM) x (resistance R305) (Equation 2) ^ Factory (Equation υ and (Equation 2), the voltage of the driving voltage VC0ML generated at node 1 The values are as follows (Expression 3). (Drive voltage VGGML) = (Drive voltage VGMMH)-(Amplitude voltage VREFM) X (Resistor R305) / (Resistor R304) (Expression 3)

^ This' supplies the driving voltage% corresponding to the control signal Sa from the supply calculation 301 to the switching transistor SWb and supplies the driving voltage VC0ML corresponding to the control signal and amplitude information Sc to the switching transistor 2. The "next" switching transistors SW1 to SW6 perform the same operations as in the i-th embodiment. As a result, the operational amplifier n 301 from the supply is output to the node brain 5H (the driving voltage TO) MH and the driving voltage VCqML generated at the node brain 5L are alternately output to the VCOM operation amplifier 13 (see FIG. 6). <Functions of Clamping Transistor> Via the clamp transistor T311-1, the voltage of the supply transistor T3 03-2 can be adjusted. In other words, the drain voltage of the supply transistor T303-3 can be set to (bias Vbiasl) + (gate-source voltage of the transistor T311-1). Therefore, the voltage value of the drain voltage of the supply transistor T303-2 can be made higher than the voltage value of the reference voltage VREFL. In addition, since the electrode voltage of the supply transistor Bog-2 can be made smaller than that in the prior art, the influence from the dependency of the drain voltage can be reduced. Here, it is preferable that the bias voltage Vbiasl is "0V" and the gate-to-source voltage of the clamping transistor is equal to or almost equal to the "amplitude voltage vrefm". In this way, since the drain voltage of the supply transistor T303-2 can be made equal to the drain voltage of the supply transistor T303-1, the influence of the drain voltage can be further alleviated. In addition, by setting the clamp transistors T311-2 and T311-3, the drain voltages of the supply transistors T303-3 and T31b 4 can be adjusted. In other words, the drain voltage of the power supply ^ 31 200532300 ding 303-3 will not be higher than "(bias VMas2)-(the gate of the transistor 1311-2, voltage between the sources}", and the power supply transistor The drain voltage of τ · -4 will not be higher than "(bias Vbias3)-(gate-source voltage of transistor T311-3) /. Therefore, the supply transistor T3〇3-3 The drain voltage of T3403--4 is lower than the reference voltage VREFH. In addition, similar to the supply transistor T303_2, the influence of the dependency of the drain voltage of the supply transistors T303-3 and T303-4 can be reduced. Here, it is preferable that the gate-source voltage of the clamp transistor T311-3 is equal to, or almost equal to the gate-source voltage of the clamp transistor T311-2, and the bias voltage is Vbias2 and the bias voltage. Vbias3 is equal to, or substantially equal to, the gate-source voltage of the clamp transistor T311-2 (T311 3). In this way, the power supply φ crystals T303-3, T3〇3-4 And; and the pole voltage will not be higher than "〇ν". <Effect> As described above, due to the proper operation of switch SW1 to switch SW6, the node N305L can be The bit is stable at "-5V", so the supply transistor T303-4 can make the potential difference between the two terminals less than "(reference voltage VREFH)-(reference voltage V ^ EFL). In addition, each supply transistor can also be made The potential difference between T303-2 and T303-3 is less than "(reference voltage is EFH)-(reference electric dust VREFL), and the potential difference between the two ends of the clamping transistors T311-1 to T311-3 can be made. Less than "(reference voltage VREFH)-(reference voltage VREFL). Through this, compared with the conventional driving voltage generating device shown in Fig. 13, it is possible to reduce the supply power T303-1 to T303-4. Withstand voltage, it is possible to reduce the circuit scale. In addition, the supply transistors T303-1 to T303-4 and clamp transistors T311-1 to T311-3 have a lower withstand voltage, so that the process deviation of each transistor can be reduced. Therefore, it is possible to reduce the difference in current characteristics of the current mirror circuit formed by the supply transistors T303-1 and T303-2, and the difference in the current characteristics of the current mirror circuit formed by the supply transistors T303-3 and T303-4. In addition, supply transistors T303-1 to T303-4 and clamp power can be alleviated The influence of the drain voltage dependency of the crystals T311-1 to T311-3. Through this, it is possible to accurately generate a driving voltage VCOML having a voltage value corresponding to the control signal Sa and the amplitude information Sc. 2005 32 200532300 And, the voltage of the beautiful Vbiasl The value can be any appropriate value so as to act in the saturated region with the supply transistor T3G3 ~ 2; clamp the gate electrode T31H between the gate and source of Vgs, each pole = each of the voltages 间 s Lai is the clamp transistor T3ii—k = V; and each of the gate-to-source ·, non-source-to-source voltage Vds and the back gate-to-source between the supply transistor T303'2 It is below the absolute maximum rating of the supply transistor T303-2. In this way, the clamping transistor T311-1 and the supply transistor are biased. The voltage value of = Vbias2 can be any suitable value so that: the clamp transistor ™ feeding transistor T3 03_3 operates in the saturation region; the clamp transistor Μΐ + ίνί 极 ^ 极 f ΐϊ 细, 极 极 — 源The source voltage of Vds and the back-closed pole is one source. The voltage of the mother of Vbs is the absolute maximum of clamp transistor T3u_2, and the voltage between gate and source of supply transistor T303_3 is fine. _, Each of the source-to-source voltages Vbs is below the absolute maximum rating of the power supply solar panel T303-3. The value of L = Lbif can be any appropriate value so that: the clamp transistor T303-4 operates in the saturated region; the clamp transistor is old and the voltage between the electrodes VgS and the electrode-source The voltage of the electrode voltage Vds and the back gate-source voltage source Vbs-the voltage is below the absolute maximum rating of the clamp transistor T311_3, and the gate-source voltage Vgs of the supply transistor T303-4 Wu Ji

Each voltage between Vds and the post-source-to-source voltage Vbs is below the absolute maximum rating of the power supply sun-body T303-4. And when the transistor 312_N shown in FIG. 8 (A) or the transistor 312-P shown in FIG. 8 (B) is used instead of the diode 312-D, the same effect can be obtained. According to the voltage values of the reference voltage VREFH and the reference voltage VREFL, it is possible to increase the clamp between the supply transistor T3G3-2 and the supply transistor Gang-3 and between the resistor R3 05 and the transistor T303-3. Transistor. In this way, the large potential difference between the reference voltage VREFH and the reference voltage Satoshi FL can also reduce the withstand voltage of the supply 33 200532300 transistor and the clamp transistor. In addition, although in the present embodiment, a supply current generating section (selective operational amplifier 302, resistors R304 and R305, supply transistors T303-1 to T303-4, and clamp transistor T311 --- T311-3) replaces the step resistor 101L and the selection section 102L, but it is also possible to use this supply current generation section instead of the step resistor 101H and the selection section 102L. In this case, use n-channel transistors instead of p-channel transistors (supply transistor T303-1, etc.), and use p-channel transistors instead of n-channel transistors (supply transistor T30-03-3, etc.) ) Just wait. (Fourth Embodiment) <Overall Structure> A driving voltage generating device 4 according to a fourth embodiment of the present invention includes a VCOM voltage generating unit 42 as shown in Fig. 9 instead of the VCOM voltage generating unit 32 shown in Fig. 6. Except for this, other structures are the same as those in FIG. 6. In addition, here, the time control unit 31 uses the control signal Sb and the amplitude information Sc to control the voltage values of the driving voltages VC0MH and VC0ML output from the vcOM voltage generation unit 42. <The internal structure of the VC0M voltage generating section 42>, μ The VC0M voltage generating section 42 shown in FIG. 9 includes a supply operational amplifier shown in FIG. 7, a lion operational amplifier concept, and a supply ^ 〇3. -2, clamping transistors T31η and T311_2, resistors 5 and 2 = 312 D, instead of the step resistors 101 and 102 shown in Figure}. The other structures are shown in the VCOM voltage generating section 12 shown in FIG. &Quot; Supply operation amplifier is connected to the selection department and switching transistor 2 Selection operation amplifier 302, supply transistor T3〇3-—l, T30-03-2 Sweet resistance transistor T3U-1 and T311 The connection of —2 is shown in Figure 7. ί No. The supply transistor, T303-2, clamp transistor and T3U_2, = R3G5 are connected in series ^ between the reference node __3 and the node fine%. The node pm and the search circuit give an operation between $ 301 and the switching transistor SW2. The resistor 5 is connected between the clamp transistor T3Π-2 and the node N405L. 34 200532300 Diode 312-D is connected to the node between the supply operational amplifier and the reference node. The reference transistor is switched off and the switch transistor SW1 is connected to the clamp transistor T3. Between node N405H and node N405L ·. &quot;、 The connection relationship of the switching transistors SW1 to SW6 is shown in FIG. 1. <Operation> Next, a description will be given of one of the supply voltages generated by the step resistor legs of the VCM voltage generating section 42 shown in FIG. 9 in response to the selection of the selection section 102L from the control operation of the Japanese temple control section 31. The driving voltage selected by the selection unit 102L is then turned out to ° $ τca. One of the f-forces is the op amp 302 for selection, the transistor T303-! Disk ρΠ transistor T3U—bu T311-2. The implementation form_ 目 = 的 动 ^ Therefore, the driving voltage vc_ generated at the node_5Η is as shown in the following (Equation 4). That is, the dynamic voltage yam) = (He Lai post L) + (Amplitude voltage (Resistor R305) / (Resistance R304) (Equation 4) Like this' will correspond to the control signal Sb and the amplitude information Sc driving voltage VC0MH to the switch , The crystal SW1, and the driving voltage vcOML corresponding to the control signal Sb is supplied to the switching transistor gw. Secondly, the switching transistors SW1 to SW6 perform the same operation as in the first embodiment = The reason is that the driving voltage vc generated at the node N4055H and the driving voltage VQ outputted from the supply, the operational amplifier 301 to the node N4055L) are alternately output to the VC0M operational amplifier 13 (see FIG. 6). ). <Effect> As described above, the potential of the node N405H can be stabilized at "+ 5v" by appropriately switching the switching transistor SW1 to "1", so that the potential difference between the two ends of the supply transistor T303-2 can be made smaller than "(reference voltage VREFH) — (Reference voltage 35 200532300 VREFL) ”. Therefore, the potential difference between the two ends of the clamp transistors T311-1 and T311-2 can also be made smaller than "(reference voltage VREFH)-(reference voltage VREFL). As a result, it can be compared with the conventional drive shown in Fig. 13 Compared with the voltage generating device, the financial pressure of the supply transistors T303-1 and T303-2 can be reduced, which can reduce the circuit scale. Moreover, the process deviation of the supply transistor T303-1 can be reduced, so the supply power is reduced. The difference in the current characteristics of the crystal T303-1. Also, similar to the supply transistor T303-1, the difference in the current characteristics of the supply transistor T303-2 can be reduced. Through this, the corresponding control signal Sb and amplitude information can be accurately generated The driving voltages VC0MH and VC0ML of Sc. When using transistor 312-N as shown in FIG. 8 (A) or transistor 312-P as shown in FIG. 8 (B) instead of diode 312-D The same effect can be obtained. (Fifth Embodiment) <Overall Structure> FIG. 10 shows the overall structure of a driving voltage generating device 5 according to a fifth embodiment of the present invention. The device 5 includes a VCOM voltage generating unit 52 and the structure shown in FIG. Time control unit 31, instead of as shown in Figure 5 The time control unit 11 and vcoM voltage generating unit 22 are shown. The driving voltage generating device 5 further includes a diode 312-D as shown in Fig. 7. The other structure is the same as that in Fig. 5. The VCOM voltage generating unit 52 responds to time. The control signal Sa and the amplitude information Sc of the control unit generate the driving voltages VC0MH and VC0ML. The diode 312-D is connected to the node N512-1 between the VC0MH operational amplifier 23H and the switching transistor SW1 and the receiving reference voltage VSS. Between the reference node N512-2. &Lt; VC0M voltage generating section 52>, VC0M voltage generating section 52 shown in 10 is provided with a selection operational amplifier 302 shown in FIG. 7 and a supply transistor T303-1 to T303- 4. The resistors R304 and R305, and the clamping transistors T31M to T3Π-3 replace the ladder resistor 101L and the selection section 102L shown in Fig. 5. The other structure is the same as that in Fig. 5. The selection amplifier 302, supply The connection relationship between the transistor T303-1 to T303-4, the resistor R304 and the clamp transistor T311-1 to T311-3 is the same as that in Fig. 7. The resistor R305, the clamp transistor T31 丨 -3 and the supply transistor T3. 3-4 series connection 36 200532300 to the operational amplifier 23H and switch located at VC0MH The node N505H between the transistor SW1 and the reference node N301-5. The interconnection node N305L between the resistor R305 and the clamp transistor T31 is connected to the operational amplifier 23L for VC0ML. <Operation> VC0M shown in FIG. 10 Operation of the voltage generating section 52. First, as in the second embodiment, the selection unit 102H selects one of the plural supply voltages generated by the step resistor 101L. Next, the operational amplifier 23H for vcomh outputs the supply voltage selected by the selection unit 1_ as the voltage VCOMH.

On the other hand, the selection operational amplifier 302, the supply transistor T3 03-; [to T303-4, the resistors R304 and R305, and the clamp transistor T311-31 to 31-3 are performed, and the third implementation is performed. Same action in form. Therefore, the driving voltage VC0ML is generated at the node n3051. Next, the VC0ML uses the operational amplifier 23L to output the driving voltage VC0ML generated by the node N305L to the switching transistor SW2. Next, the switching transistors SW1 to SW6 perform the same operations as in the second embodiment. Therefore, the driving voltage VC0MH outputted from the operational amplifier 23Η for VC0MH to the switching transistor SW1 and the driving voltage VC0ML outputted from the operational amplifier 23L for VC0ML to the switching body SW2 are output to the output terminal 15 in turn. <Effect> As described above, since the potential of the node N24H can be stabilized at "+ 5V", the operational amplifier 23H for VC0MH can be constituted by a low withstand voltage crystal. In addition, since the potential of the node N24L can be stabilized at "-5V", the operational amplifier 23L for VC0ML can be constituted by a low withstand voltage crystal. Therefore, the circuit scale can be reduced. In addition, the operational capability (response speed) of the operational amplifier 23H for VC0MH and the operational amplifier 23L for VC0ML can be improved. ^ "(Sixth Embodiment) <Overall Structure> Fig. 11 shows the overall structure of a driving voltage generating device 6 according to a sixth embodiment of the present invention. The device 6 includes a time control section 61 and a VCM voltage generating section 62 instead of 37 200532300 it U and Satoshi voltage generating section 22. The driving electrical surface control signal Sb === / 1 uses ί ί ^ 1; ΓI ^ fΓ! L 031 ;: ™ reference ;; with 3i; ==: node between _ and Receiving &lt; internal structure of VC0M electric generating unit 62〉 1 large image = shown 1 Satoshi generating unit 62 is equipped with a selection as shown in Figure 9 ^ ί / transistor T303-1 and T303_2, resistor雠 4 R305, and clamp transistor and T3U = Kt3UL, ladder resistors and resistors. Other structures are the same as in Figure 5. P: amplifier 302, supply transistors T303-1 and T303- 2. Electric HE &gt;, the interconnection node NaH of rai-2 and resistor 连接 5 is connected to VC0 operational amplifier 23H. <Operation> The operation of the VC0M voltage generating unit 62 shown in FIG. 11 will be described. First, as in the second embodiment, the selection unit 102L selects one of the plurality of electric power supply generators generated by the step resistance 101L. Vc〇ML uses the supply output of the Ministry of Transport as the driving power. On the other hand, the op amp 302, the supply transistors Tgogq and T303-2, the resistors R304 and R305, and the clamp transistor T31M and T311 -2 38 200532300 performs the same operation as in the fourth embodiment. Therefore, the operating voltage VC0MH is used. Second, the driving voltage VC0MH generated by the operational amplifier 23H ^ is output to the switching transistor SW1. ^ Produced by MUbH It: human, switch heart sun body SW1 to SW6 perform the second real action. Therefore, the driving voltage VOM of 3 is output from the operational amplifier 23H for VC0MH and the driving voltage VC0ML of 1 body SW2 for operational amplifier n23L from · ML. "Alternatively output to the turn-out terminal"

As described above, since the VcMH operational amplifier 23H and the VC0ML operational amplifier 23L can be configured with a low withstand voltage crystal, the circuit scale can be reduced ^ and the VC0MH operational amplifier 23H and the VC0ML operational amplifier can be improved. 23L driving capacity (response speed). w In the above embodiment of the present invention, specific numerical values are given for explanation, but they are not necessarily limited to these specific examples, and can be replaced with other appropriate numerical values. Possibility of industrial utilization-Since the driving voltage generating device of the present invention can reduce the circuit scale, it is extremely useful as a driving voltage generating device for driving a liquid crystal display panel such as a mobile phone by a parent current driving method. V. [Brief Description of the Drawings] FIG. 1 is a diagram showing the overall structure of a driving voltage generating device according to the first embodiment of the present invention. FIG. 2 (A) is a diagram showing an example of the configuration of the step resistor 1011 and the selection section 1022 shown in FIG. 1; FIG. 2 (B) is a diagram showing the steps of the step resistance 101 and the selection section 102L shown in FIG. Structure example diagram. 3 (A) to (F) are waveform diagrams showing output examples of the control signals si to S6. 4 (A) to (0) are waveform diagrams showing examples of potential changes of respective nodes NH, [, and NL. 39 200532300 FIG. 5 is a diagram showing the overall structure of a driving voltage generating device according to the second embodiment of the present invention. 6 is a diagram showing the overall structure of a driving voltage generating device according to a third embodiment of the present invention. FIG. 7 is a diagram showing the internal structure of the VCOM voltage generating unit shown in FIG. 6. FIGS. 8 (A) and (B) are diagrams showing FIG. Figure 9 is a diagram showing the internal structure of a mantra used in the fourth embodiment of the present invention. The structure of the puppet. The structure of P | 10 shows the overall drive voltage generating device of the fifth embodiment of the present invention. Fig. 11 is a structural diagram of a driving voltage generator according to a sixth embodiment of the present invention. Fig. 12 is an overall structural diagram of a conventional driving voltage generating device. Fig. 13 is an overall structural diagram of a conventional driving voltage generating device. [Main Description of component symbols] I, 2, 3, 5, 6 Drive voltage generator II, 31, 61, 81, 91 Time control section 12, 22, 32, 42, 52, 62, 82, 92 VC0M voltage generation section 13, 83 VC0M Operational Amplifier ° 14, 24H, 24L · Smoothing capacitor 15 ^ 85 Output terminals 23Η, 23L VC0MH operational amplifier 101Η, 101L step resistor 102Η, 102L selection unit 301 supply operational amplifier 302 selection operational amplifier 312-D diode 312-N , 312-P transistor 200532300 801H, 801L step resistor 802H, 802L selection section 901 supply operational amplifier 902 selection operational amplifier C14, C24H, C24L, C84 smoothing capacitor N14, N24H, N24L node reference node N101H-1, N101H- 2, N101L-1, N101L-2 N102H, N102L Nodes N103H, N103L Specified voltage supply nodes N301-1 to N301-5, N312-2 Reference node N303 Interconnect node R111H-1 to R111H-N Resistors R111L-1 to R111L -N resistor R304, R305 resistor S1 ~ S6 control signal SW1 ~ SW6 switching transistor 电 〇 ~ t5 time T112H-1 ~ T112H-N transistor T303-1 ~ T303-4 supply operation amplifier T311 -1 ~ T311-4 clamp Bit Operational Amplifiers TAPH-1 ~ TAPH-N Tap 41

Claims (1)

200532300 X. Scope of patent application: 1. A driving voltage generating device, including: in Part 3 = receiving the first supply of the plurality and outputting the first supply of the second voltage; 2 supply the cap and rotate out the second power supply 4 connected in series to the M switch between the first selection section and the second selection section; Le 1 to the first specified voltage supply section for The first interconnecting node of the former ^ supplies the first prescribed voltage; and the second prescribed voltage supply unit between the switches is for supplying the second prescribed voltage to the aforementioned third switch and the aforementioned second interconnecting node; 4 switches The ^ 1 ^ switch is connected to the aforementioned 丨 selection section and the aforementioned 2nd to 2nd off. Connected to the aforementioned 丨 off and the aforementioned 3rd _? ^ Of the 4 switches: The fourth switch is connected to the third switch and the second option. When H1 is set to be on, the first prescribed voltage supply unit is different. When the fourth switch is on, the first 2 prescribed voltage to supply the second prescribed voltage; | 1 /, may return to the regulation of the voltage supply department The drive voltage generating device whose impedance is lower than that of the predetermined voltage supply unit before the second selection unit has a lower output impedance than that of the first selection unit in the first range of the patent application scope, the driving voltage generating device includes the following steps: The resistor is connected in series between the second reference node receiving the first reference voltage and the second reference node receiving the second reference voltage, and generates _ (N is from: ★ number) the first supply voltage of different voltage levels; and w The second step resistor is connected in series between the third reference node that receives the third reference voltage and the fourth reference node that 42 200532300 = the fourth reference voltage, and generates a second supply (M is a natural number) with a different voltage level Voltage; the month selection section outputs one of the N first supply voltages generated by the aforementioned first step resistance; the Ϊ! Selection output one of the second supply voltages generated by the aforementioned second step_ 1. The supply unit includes a fifth switch connected between the first and the first interconnection nodes that receive the first specified voltage; 2; the rC, the power supply, the unit includes the first connection that is connected to the second specified voltage; 1 When communicating, Said first switch when the shaft 3 through 5, the sixth switch is _. The on-resistance of the 5th switch is less than that of the previous middle. The on-resistance of the 4th corpse is less than the above-mentioned first two: • The driving electrical difficulty of the 2nd item of the application of the patent application 2 is higher than the previous reference. 2Reference ', Medium ·: The third reference voltage is higher than the first; JJ: The first specified voltage satisfies: m (the second reference voltage) &lt; ) $ (No. 1 reference voltage); (No. 4 reference voltage) $ (No. 2 ^ Patent application application _ 2 driving ^) = (H reference power). ; Said the first step resistor includes US before the turn out; where: = Said the second step resistor includes the aforementioned M first taps; the first selection section just includes the M second Taps; N 1st selection transistors of the taps; N 1st alternatives included in the ladder resistors; 2nd selection sections including M 2nd selection transistors corresponding to the aforementioned taps; &amp; ladder resistors Contained M No. 2 43 200532300 front fiber contact _ and the aforementioned first ^ on and off selection of the ship's crystal ηΓ Do not connect to the corresponding second tap and the above-mentioned drive 1 pressure Device, 1. ΐ = ί Device access—Na: The first control unit of the first transistor has the first to fourth modes; the first, second, and sixth switching transistors are turned off. • The front = 4th in the middle makes the front, the 3rd, and the 3rd dagger interrupted, and the ==== the power is turned off at t ,: the 3rd, 4th, and 5th switching transistors are turned off and the power is turned off. The body is turned on, and the first solar body is turned on, and the --type pressure 2 generates the electric crystal and is turned off. The ^ th receiving a plurality of first supply voltages and selecting the first supply power # 1 has a first signal between the first selection unit and the supply current generation unit corresponding to an amplitude signal string representing a predetermined potential difference, and connects the first selection unit and the aforementioned No. 丨 _ = Supply, current generation unit and the aforementioned No./On: II. = No. 1 is located in the first turn of the above-mentioned second sweet order, and the distribution of electricity to the material No. 1 is restricted to the first interconnection node of 44 200532300. The first switch is connected to the second switch and the second switch is connected to the second switch, and the second switch is connected to the second switch. The third switch is connected to the above switch. 3 switches; the aforementioned fourth switch is connected to the aforementioned fourth switch; when the aforementioned first switch is on, the first ^, and ^ 5 are provided between 0 and the current generating section; the first specified voltage; ^ See that the voltage supply unit does not output the above. When the first = is on, the aforementioned second specified voltage supply ㈣ ^ The output impedance of the constant voltage supply unit is lower than the input impedance of the supply current generation unit H2 and the voltage supply unit. Output in the aforementioned first selection section 8. If item 7 of the scope of patent application Drive production write:;: The first node of the first wiring and the aforementioned first selection unit: including the aforementioned supply current generating unit includes: The serial body t is connected to the first electric power; = and the reference node and the second reference node In the first differential amplifier circuit for the first supply transistor, one input terminal is connected to the interconnection node between the front crystal and the second resistor, and the other output signal is connected to the output terminal. The aforementioned second supply = The second supply transistor connected in series to the second node located in the aforementioned second wiring and the aforementioned second supply transistor, the i-th clamp transistor and the aforementioned second supply transistor which is immediately connected Make the aforementioned i-th reference section to ride the front gan ^^ said body; 45 200532300 during which the gate receives the first supply transistor's front gate transistor and connects the first supply transistor with the aforementioned second 乂, [ 々 Electricity between the sun and the sun, and receives the first bias voltage at its gate; 刖 H 2 clamp transistor is connected between the first clamp transistor at the second node of the second wiring, and at its gate Receive the second bias. / ,, a 9 · The driving voltage generating device according to item 8 of the patent application, wherein the electric dust value is the voltage value that makes the electrode-source-to-source electric house between the first clamp transistor and the source voltage equal to the amplitude information. . Log 10 · If the driving voltage generating device of item 8 in the scope of the patent application, the pot is ten. = The value of the second bias is equal to the closed-source between the second clamping transistor 11 · If the scope of the patent application is seventh The rotating surface generating device of the item, between the first node of the first wiring and the first selection section, the first supply current generating section includes: a string for the first supply between the reference node and the second reference node The transistor 2 is connected to the input terminal in order to describe the interconnection between the first supply power source and the second resistor. The other input terminal has just described the amplitude signal, and the output terminal is connected to the j-th supply. The pole of the transistor; "The second power supply crystal, the first and second clamp transistors, and the third supply transistor connected in series between the aforementioned first reference node and the third reference node ^ are connected in series to A third clamp transistor and a fourth supply transistor between the second node of the second Si line and the third reference node; the second supply transistor is connected to the first reference node and the i-th clamp Between the transistor and the gate at its gate! The gate voltage generated by the supply tritium crystal; 46 200532300, said that the body is connected between the first supply transistor and the second second power clamp, and receives the first bias voltage at its gate. · Don't if f ί! The transistor is connected between the first clamp transistor and the third supply, the solar and solar body, and receives the second bias voltage at its gate; Between the second clamp transistor and the aforementioned third reference point f, its gate and its drain are connected to each other; do n’t say on the above: Yue is connected to the second node located on the aforementioned second wiring and the aforementioned electric day Between the body and receiving the third bias voltage at its gate; “the test node 5 uses electricity” to connect the third clamp transistor and the third generated transistor to receive the third supply transistor. The driving voltage generating device of the eleventh range of the gate pole, wherein: the body of the body; the pole _ is equal to the third clamp transistor which is electrically connected to the second between the second selection section and the fourth switch. Differential amplification electric power range 8 items of 'Hedian electric surface generating device, I enter-cow spoon cup. No.:;: Located at the first line of the aforementioned first wiring The f-node step and package are described in the first road, which is connected to the second __ method of driving the electric power $ electric device, which is located in the aforementioned second wiring, wherein: The first selection section is used to receive a plurality of first! Supply the voltage and rotate out one of the first power supply 47 200532300. The second supply power is received and the second power supply is input. The second power supply is connected in series to the first selection unit and the second selection unit. The first to the switch between the two; Le 4 1 1 1 ^ The connection between the ^ i link point exists between the first switch and the aforementioned second open door link, the second mutual node, and receiving the second specified voltage Between the second round; B, "The second interconnect node is located between the aforementioned third switch and the aforementioned fourth switch, and the impedance of the second fiber of the second response of the second switch is lower than the aforementioned first control method including: Step (A), # 铪, +, network! „The 4th and 5th switches 4 2 and 6 are turned off, and the aforementioned 3rd, step? 2nd and 6th switches are opened, and the 3rd, 5th and 5th switches 5 are turned on; , 3, turn on V, ,,,,,, Step, when switching to the previous step, turn on the 2nd turn on / off, and then turn on the 1st and 6th turn on steps (D), as described in 4 and 5 The switch is turned off; and when the switch 2 is switched to the previous step, the third switch is turned off, and the fourth and sixth switches are turned on, and the first and sixth switches are turned off. On. Eleventh style: 48