TW200529288A - Semiconductor processing system and bubble trap - Google Patents

Abstract

To provide a broadly applicable semiconductor processing system and bubble trap therefor that enable accurate control of the precursor liquid flow rate. A semiconductor processing system contains a liquid feed conduit 34 that feeds precursor liquid to a processing compartment 12 using transport by a pressurized gas. A vaporizer 22 and an MFC 24 are disposed in the liquid feed conduit 34. A bubble trap 26 is disposed in the liquid feed conduit 34 upstream from and in the vicinity of the MFC 24. The bubble trap 26 has a separator compartment 44 that separates, from the precursor liquid, bubbles of the pressurized gas originating from the pressurized gas and admixed in the precursor liquid. The bottom of the separator compartment 44 is provided with a liquid inlet 46 for introduction of the precursor liquid and a liquid outlet 48 for discharge of the precursor liquid. The top of the separator compartment 44 is provided with a gas outlet 52 that discharges the gas separated from the precursor liquid.

Description

200529288 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a semiconductor processing system 'and a bubble collector arranged in a liquid feed conduit, which is located upstream of a mass flow controller of a semiconductor processing system. nearby. Here, semiconductor processing refers to forming a semiconductor element and / or a structure (including, for example, various interconnections) connected to the semiconductor element on a substrate by forming a desired pattern on each substrate, such as semiconductors, cathodes, and conductors. , Various electrodes) various processes implemented. This substrate can be used as an example for semiconductor wafers and glass substrates for liquid crystal displays (LCD) and flat panel displays (fpd). [Prior Art] In some examples, liquids are used as precursors of semiconductor manufacturing processes during semiconductor device manufacturing processes. In this case, a pressurized gas such as helium gas is typically fed into the precursor storage tank for transporting the precursor from the precursor storage tank to a place of use (pou). The pressure of the pressurized gas transports the precursor liquid from the precursor storage tank to the liquid feed conduit. At this time, some pressurized gas will dissolve into the precursor liquid. Since unnecessary components of the gas system dissolved in the precursor liquid can be eliminated by an exhaust device provided in the liquid feed duct. FIG. 7 includes a schematic diagram of a conventional precursor liquid feed section illustrating the use of liquid as a precursor for semiconductor processing in a semiconductor processing system. As shown in FIG. 7, a liquid feed conduit 134 and a pressure delivery conduit 136 are connected to a precursor storage tank 3 2 that stores a precursor liquid. The liquid feed pipe 1 3 4 feeds the precursor from the other substance storage tank 丨 3 2 to the 6 200529288 precursor storage selection φ ㈣ in: and tearing the transport pipe 136 will add dust such as helium = know To the front ridge health storage tank 132 towels. The detoxification device 142 # 夜月 豆 一 used to remove the gas in the front is arranged in the liquid feed pipe 134. When the precursor liquid is highly toxic, the precursor storage tank ⑴ spear 4 S 142 is surrounded by-feeding the edge frame 138 to form a zone = stand door ° haily read into the area of the edge frame 138 The system is connected to, for example, an exhaust duct (not shown) of a semiconductor manufacturing plant through a detoxification unit (not shown) and continuously exhausts air.

. The helium removal device 142 includes an inner tube 144 and an airtight outer tube 146, which are formed into a helical structure, helene; I; 44 includes a gas-permeable fluororesin (for example, Teflon ( TefWM)) membrane and the outer tube 146 includes-anti-corrosion surname metal. The liquid precursor flows into the inner f 144 $.-The vacuum fruit 152 is connected to the space between the inner tube 144 and the outer tube 46 48. When the space 148 is decompressed by the vacuum pump 152, the large pressure difference formed will sandwich the thin film of 忒 内 吕 144. Because of this pressure difference, the gas flowing into the precursor liquid of the inner tube 144 is caused It is sucked from the precursor liquid, penetrates the film, and is discharged into the external space 48, so that the gas dissolved in the precursor liquid is removed from the precursor liquid. Another used as a detoxification device In the structure, relative to the former, the precursor liquid flows into the space 148 between the inner tube 144 and the outer tube 146, and the inside of the inner tube 144 is evacuated by the vacuum vacuum pump 152. This type of detoxification device is It is disclosed in, for example, the following patent case reference 丨 _6. [Patent case reference 1] National Patent No. 4,325,715 7 200529288 [Patent Case Reference 2] US Patent Case No. 4,986,837 [Patent Case Reference 3] US Patent Case No. 5,205,844 [Patent Case Reference 4] US Patent Case No. 5,425,803 [Patent Case Reference 5] US Patent No. 5,722,736 [Patent Case Reference 6] US Patent No. 6,474,077 [Summary of the Invention] Problems to be Solved by the Invention In the course of research and development, the inventors discovered general application and control problems related to the flow velocity of the precursor liquid (To be described below) occurs in a semiconductor processing system using a precursor liquid feed section in the conventional technique shown in FIG. 7 in the aforementioned reference. The present invention was developed and considered in consideration of the problems of the conventional technique. The purpose of the invention is to introduce a semiconductor processing system and a bubble collector used to precisely control the flow rate of the precursor liquid. The f-objective of the present invention is to provide a semiconductor processing system that can be widely used and a method for solving the problem. A first aspect of the present invention is a semiconductor processing system including: a processing compartment, and a supporting base A semiconductor process 8 200529288 is performed. A precursor storage tank stores the precursor liquid used in the semiconductor process. A liquid feed conduit is connected to the precursor storage tank and fed from the precursor. A precursor liquid for the precursor storage tank; a pressure delivery conduit 'connected to the precursor storage tank storing the precursor liquid and feeding pressurized gas into the precursor storage tank to transport the precursor liquid out of the precursor Material into the liquid feed pipe; a retort connected to the liquid feed pipe and generating a process gas by distilling the precursor liquid; Connected to the processing compartment and feeding the processing gas from the distiller to the processing compartment; a shell machine controlled state, which is arranged upstream of the distiller in the liquid feed conduit; and a bubble collector, which It is arranged upstream of the liquid feed conduit and near the DC controller; a partition compartment for the precursor liquid

Wherein, the bubble collector has a body which is derived from the pressurized gas and is mixed into the: ON ’, wherein the barrier handle ^

An optical sensor, which is external and optical, has the following characteristics: It is arranged on the partition and measures the water level of the precursor liquid. It is a row of milk valves. Connected to the gas outlet and selectively opening the gas outlet; and fabricated to switch the exhaust valve based on a detection signal from the optical sensor. Khan ^ The third aspect of the present invention is characterized by a filter provided by the semiconductor processing system of the second aspect and disposed between the gas outlet and the aforementioned exhaust valve to restrict the airflow from the side gas outlet. ^ The fourth aspect of the present invention is characterized in that the optical sensor of the semi-conductor in the second or third aspect is equipped with a first optical sensor and an optical sensor, which are respectively configured At the upper and lower limits of the precursor's limb surface in the partition compartment. ^ According to the present invention-the fifth aspect, the two-bubble collector in the semiconductor processing system of the fourth aspect is equipped with a window feature, which is formed in the enclosure, and the partition compartment is optically monitored. The precursor liquid water / in-the-first and second optical sensors optically detect the precursor liquid water level through this window. According to a sixth aspect of the present invention, the first conductor and the first conductor and the first window-to-library of the first five-point + conductor processing system of the first five-point system in the first system are equipped with the first-window and the second-window features. It is configured in the first and second optical sensors. According to a seventh aspect of the present invention, any one of the first, the first, the second, the second, or the second partitions is configured as a bubble collector in a bulk processing system, which is characterized by a precursor in the range. The liquid water level height is formed from the maximum height of the precursor liquid water level between the precursor storage tanks, which is configured as "10 200529288". According to an eighth aspect of the present invention, any one of the first to seventh aspects According to the semiconductor processing system described above, the liquid feeding tube between the bubble trap and the mass flow control has a length of not more than 50 cm. According to the present invention-the ninth aspect, the first to eighth The semiconductor processing system described in any one of the viewpoints is also equipped with a processing edge bezel feature, which forms-encloses the processing compartment, the still, the mass flow controller, and the bubble: the area space of the device, of which Zuo Xikou The air space in the area inside the outer edge of the processing edge is exhausted by an exhaust system. The Nine Nine, T $ drive storage tank is arranged outside the outer edge of the processing edge. According to the present invention A tenth perspective, A precursor liquid characteristic of a semiconductor processing system or an amine compound according to any one of the first to ninth aspects. A self-priming compound An eleventh aspect of the present invention is A ^^, 1 The liquid dehydration feeds into a rolling bubble near a mass flow controller in V official to collect and cry. In the bean, the bubble collector is equipped with the following characteristics: Z, ..., the cover-its formation-the partition compartment to separate The precursor liquid toilet originates from the pressurized gas and is mixed into the front? / __ A pressurized bubble of pilot boat liquid, in the bottom, the bottom of the partition plate compartment 44 A liquid inlet and a limb outlet that discharges the precursor liquid, and the top of the partition plate compartment 44 has a gas outlet that discharges gas from the precursor / night body, which is used to make the partition A window and a second window in the panel compartment

Secret V »Secret, π, π ", Jiulianjianji compartment 円 day V 刖 Drive fluid liquid moon bean water level can be viewed from the outside light in this way formed in the 200529288 cover; first An optical sensor and a second optical sensor, which are arranged at different heights of the first position and the second position outside the partition compartment, and optically through the first and second windows Detecting the liquid level of the precursor; an exhaust valve connected to the gas outlet and selectively opening the gas outlet; and a controller based on the detection from the first and second optical sensors Check the ^ number to open and close the exhaust valve. According to an eleventh aspect of the present description, a filter feature arranged between the gas outlet and the aforementioned exhaust valve to restrict airflow from the gas outlet is provided to the bubble collector for use according to the eleventh aspect. . According to a thirteenth aspect of the present invention, the CV valve system in the bubble collector ferrule opening of the twelfth aspect is 1x10-5 to 1x10-3. According to a fourteenth aspect of the present invention, the bubble collector of any one of the first to thirteenth aspects is characterized in that the enclosure actually comprises a member selected from the group consisting of stainless steel, nickel, nickel alloy, button, button alloy, Materials from the group consisting of niobium, niobium alloys, titanium and titanium alloys, and each window of this bubble collector conventionally includes materials selected from the group consisting of thermally tempered glass, quartz and sapphire. In addition, the embodiments of the present invention show various implementation examples of the present invention, and the embodiments of the present invention can be obtained by combining a plurality of disclosed components as appropriate. For example, when some of the components in an embodiment of the present invention have been removed from the entire set of components presented by the miscellaneous load, the removed structures can be combined with traditional well-known techniques to achieve these removed structures. 0 Advantages and effects of the present invention 2 Certain aspects of the present invention can be accurately controlled-the flow rate of osmium liquid in a semiconductor processing system, and certain aspects of the present invention also give a semiconductor processing system and the bubble collector used therein a wide range of applications . [Embodiment] In the process of developing the present invention, the inventors have studied the problems related to the liquid feed section of each of the conventional precursors as shown in Fig. 7 and have thus obtained the knowledge provided below. f In recent years, many different types of liquids have been used as precursors in semiconductor processing. For example, in the past, titanium and nitride were generally formed by physical vapor deposition (PVD), which is typically sputtering. However, it is quite difficult to provide the miniaturization and integration of components that have been seen in recent years. High level of coverage required. Therefore, the fabrication of titanium and titanium nitride has recently been achieved by chemical vapor deposition (CVD), which is expected to provide better alpha-quality films. When seeking to use CVD to form a titanium-type film, a Tid4 (titanium tetrachloride) -containing gas is used as the process gas (along with-the carrier gas 2 / or other reaction gas). However, since titanium tetrachloride is a liquid at room temperature, it is stored in a precursor storage tank as a precursor: the post uses a pressurized gas such as helium introduced into the precursor storage tank. : The precursor liquid is transported out of the precursor storage tank and flows through a liquid =, the conduit enters a steamer. -Beijing Therefore, contemporary CVD processes often use highly toxic and / or highly corrosive _ 13 • 200529288 Ilium or organometallic precursor liquids. The typical example here is to block the high-melting-point metal film and metal nitride film, such as the aforementioned titanium and titanium nitride, as barriers in the semiconductor devices and the interconnection structure.

Compared to the diversification of precursor liquids used in semiconductor processing, the applicability of the precursor liquid feed section shown in Fig. 7 is limited. Therefore, the thin film constituting the inner tube 144 of the detoxification device 142 is quite susceptible to the precursor liquid which changes with the thin film and the specific composition of the 4x4 liquid. For example, the fluorine-containing resin exhibits a low resistance to liquids such as titanium tetrachloride and Si2Cl0 (hexachlorodisiloxane or HCDS) chlorine compounds. The precursor liquid feed part shown in Fig. 7 controls the processing side of the processing at the following position ::: Make-up speed. Therefore, when the dissolved gas is still left in the precursor liquid, it is affected. Any dust reduction on the precursor liquid fed by the HI liquid to the instructor will generate bubbles in the precursor liquid. The generation of this bubble in the precursor liquid: disturbs the flow rate control of, for example, the f-flow control gate (MFC), so that the precursor liquid flow rate becomes unstable. The main thing in the example of the entrance part is to use the detoxification device 2 to remove the gas in the liquid of the driver to a relatively low level. (1) ^ w (e.g., the precursor liquid and the formation of the internal detoxification device 142) j 1 u +

It is necessary to provide a large contact area between the diaphragms or to provide a suitable exhaust energy. “Lu spoon” becomes necessary, and then a large-scale detoxification device is needed. problem. The + k a and η embodiment according to the rule of knowledge will be described later with reference to the drawings. In the description below, each component having approximately the same structure and function is assigned the same reference number and will not be more unless necessary = description. FIG. 1 includes a schematic diagram of a semiconductor processing system according to an embodiment of the present invention. This semiconductor processing system includes a semiconductor processing apparatus 10 that uses CVD to form a titanium nitride film on a substrate such as a semiconductor wafer or a glass substrate used in LCD or FPD applications. The operation of this semiconductor processing device 10 is controlled by the controller Cont.

i The semiconductor processing apparatus 1G is equipped with a processing gate 12 which supports the substrate and performs a semiconductor process thereon. In order to contain this group of available kings: sexual processing gas, the processing gate 12 is formed by n in the processing edge-area space. The processing edge frame 11 used as a semiconductor processing device is disposed in the clean room 5. Transparent: ―Solution: The space in the area in the frame 11 is utilized-exhaust duct " a duct (not / part (not shown)) is connected to, for example, exhaust guides (not shown) of a semiconductor manufacturing process and is continuously The ground is exhausted. The mounting platform 14 (branch) of the middle and lower f poles of the dagger processing compartment 12 is arranged in this configuration 安装 ^ 卩 ^ to install the substrate. The upper electrode of the shower head is treated to form the inner surface of Γ 12 Facing the security 414. The RF field used to convert between 14 and 16 is applied from the two electrodes 12. The processing compartment: two sources 15. The RF power is formed in the processing compartment to be discharged. The inner area below the 邛 * is connected to an exhaust system 1 δ, and the tick body is established in it. The milk feeding system 19 and 30 are used to feed the ash in the ash of the oxygen sculpture. Up to the 15 200529288 processing compartment 1 2. The gas feed system 19 feeds, for example, nitrogen, hydrogen, rat gas to the processing compartment 12 and because it has a general structure known in the prior art, it does not Will be detailed. On the other hand, the gas feed system 30 feeds titanium tetrachloride to the treatment compartment 1 2 Its structure will be described below. Gases from the gas feed systems 19, 30 are fed to the processing compartment through, for example, a shower head (upper electrode) 16. The shower head 16 may have a Structure in which each reaction gas is provided with an independent feed path and these gases are mixed first in the processing compartment 12 (post-mixing type). The semiconductor processing device 10 in the embodiment is considered to use a Plasma is a plasma CVD tool for performing thin film manufacturing. However, the semiconductor processing apparatus 10 may be, for example, a low pressure (LP) CVD tool for performing thin film manufacturing without using a plasma. The gas feed system 30 is configured at There is a precursor storage tank 32 outside the clean room 5 to hold four gaseous titanium liquids (precursor liquid). A liquid feed pipe 34 and a pressure delivery pipe 36 are connected to the precursor storage tank 32: this The liquid feed pipe 34 feeds the precursor liquid from the precursor storage tank 32 and the pressure delivery pipe 36 feeds the atmosphere to the precursor storage tank 32 as a pressurized gas. Since the four gasification is highly toxic, The former The object storage tank 32 is surrounded by a feed-in edge frame% to form a zone space in the clean room 5 :. The feed-in area space within the feed-edge frame% is τ through the oxygen-exhausting guide 38a. The detoxification section (not shown) is connected to, for example, an exhaust duct (not shown) of a conductor manufacturing plant and continuously exhausts. When the precursor for semiconductor processing is _ at room temperature and room pressure, it is dissolved by heating or a solvent to Convert it into a precursor liquid. In the example of ^ 16 200529288, Xi & _ μ, the drive storage tank 32 is a sealed container, which temporarily stores the precursor liquid from the Haikou body and is used for Pressurized carrier handling equipment including Win Gate King Tong Niu, etc.) ,. Therefore, for the purpose of this specification, the state of "precursor liquid", "pressurized delivery point" from "reservoir storage tank 32 to the liquid feed conduit 34" does not indicate the state of the precursor at room temperature and room pressure. . ° j Figure 1, the side liquid feed pipe 34 will be the four gasification of titanium liquid (,, nocturnal precursors) into $ M — Jiuhuo version (/ night to the distiller with Jie Distillation 22; This still 22

: Placed near the processing compartment ^ within the outer frame u of the processing edge. The four gasification liquids are transferred to the flammable country—Λ ^ person, and—the two are heated in the distillation chamber 22 with a suitable heating medium to carry out the distillation to generate titanium tetrachloride gas. The tetra-titanium titanium gas from the steaming chamber M is fed into the processing interval 12 through the gas feeding duct i during its mixing with the human body (for example, the 'carrier gas') from the gas feeding system. . A liquid mass flow controller (MFC) 24 is provided to control the liquid flow rate of the precursor, and the liquid is fed with a gas,... The night version is fed upstream of the still 22 of the guide 34. The milk bubble collection was provided in the 26 series near the upstream of the liquid capsule. The bubble trap Λ = the liquid body of the tube is fed to the MFC 24 before the gate is used to combine the precursor liquid, 広 A # — ^ into this precursor liquid

And it comes from the helium bubbles of this nitrogen pressurized gas. T% mountain lice / bagging MFC 24 and bubble collection cry 26 were also placed on the treatment side. .器 22 内。 Near the device 22. The treatment compartment 12 in the 1 and the partition compartment 44 in the steaming room) The drive reservoir 3 2 This type of way to the height to match the bubble collector 26 is based on its interior (the surface of the precursor liquid The height corresponds to the maximum 1720052005288 surface of the precursor liquid surface from the forelock chamber 22. In addition, since the bubble trap 26 is provided to eliminate ammonia bubbles in the precursor liquid on the mass flow controller '24 Toxic effects, the length of the liquid feed conduit 34 between the bubble collector 26 and the mass flow controller 24 is expected to be as short as possible. From this point of view, the bubble collection benefit 26 and the mass flow control The length of the liquid feed conduit 34 between the devices 24

No more than 50 cm and expected to be no more than 5 cm. In a more preferred embodiment, the bubble collector 26 is actually configured as a single unit with the mass flow controller 24. When the bubble collector 26 and the mass flow controller 24 are provided as independent units, the liquid feed guide 34 preferably extends from the bubble collector 26 to the f-flow control in an actual horizontal or downwardly inclined manner. %. Figure 2 contains an enlarged view of the bubble collector used in the semiconductor processing system shown in Figure 1. The bubble collector 26 has a pressure-resistant cover & the mass flow control n 24% of the precursor liquid traverses and forms a separator septum for separating the bubbles combined with the precursor liquid μ the envelope 42 is formed of, for example, a corrosion-resistant residual material selected from the group consisting of stainless steel, brocade, alloy, chi, renrenquan, hafnium, sharp alloy, titanium, and titanium alloy. The bottom of the partition @ 44 is equipped with a liquid inlet 46 for introducing the precursor liquid and a liquid outlet for discharging the precursor liquid ...: night body ... 6 tank outlets. 4: respectively connected to the liquid feed guide 4 on the 'cup side and the liquid feed conduit 3 4 downstream side. The top of the bulkhead compartment 44 is also equipped with a gas outlet. 52, Α discharges the gas separated by the precursor liquid to the front space +. … Exit 52 is connected to the exhaust system via a solenoid: Solution 56. The nozzle 58 is used to restrict the flow of gas from the gas outlet. 18 • 200529288 is placed at the gas outlet. The filter 58 is released into the gas from the gas outlet and the precursor liquid in the liquid Bellevue 34 flows out of the partition compartment 44. Therefore, the determined rv of the filter 58 The valve system is a function of the internal force of the liquid feed conduit 34. For the example of a tetrachloride ... V: precursor liquid supply system used as an example, the nozzle ... One to 1x10, and the predictable range is Ιχίο-5 to 1x10-4. When at 60 degrees Fahrenheit: pure water flow is generated to maintain a pressure difference of 1 psi, this cv valve system adds 1 life per minute (_ metered flow rate) Values, among which, IPs bu 6. hit X 1 0 3 Pa '6 〇. |? == about 1 $ a. Guang ^ uniform 15.60, and 1 US gallon = 3.78543 liters. 21 Upper window 62a and lower window 62b is formed in the enclosure 42 in an airtight manner so that the liquid level of the precursor liquid in the partition compartment 44 can be optically monitored from the outside. These windows 62a, 62b are selected from, for example, thermally tempered glass, quartz One of the groups made of sapphire is a transparent and anti-corrosive material. The upper optical sensor 64a and the lower optical sensor. The sensors 64b are arranged at different heights outside the cover 42 in accordance with the windows 62a, 62b. The optical sensors 64a, 64b optically detect the inside of the partition compartment 44 through the windows and Mb. Precursor liquid water level RL. The upper optical sensor 64a and the lower optical sensor 64b correspond to the upper and lower limits of the precursor liquid water level RL, respectively. A vertically upward single narrow window can be used in the upper and lower windows. The appropriate place of 62a, 62b. When the entire enclosure 42 is made of a corrosion-resistant and transparent material and provides: the required pressure resistance, the windows 6 2 a, 6 2 b become unnecessary. 19 • 200529288 The debt measurement signals generated by these optical sensors 64a, 64b and 5 Pir, A are transmitted: Controller 66 of collector 26. This controller 66 is based on closing the solenoid valve 54. More In particular, when the lower light system σσ 66 opens the solenoid # ^ ^ ^ ^ L 的 gas in the partition compartment 44 ^, pp ^ ^ ^ heart, 64a receiver detected the water level RL · When the upper limit has been reached, the πσ control system 66 can be turned off to close the solenoid 54. The wide 66 can be as needed or I want to exchange information with the CONT used for this controller. The following advantages of the 5H technology are added when the semiconductor processing system as shown in Figure 1 includes the bubble collector as shown in Figure 2. First, the bubble collector 26 makes the flow rate control of the sterilizer 24, which has been used by the Chinese and Japanese people, and the second one, which is the milk flow controller 24. Therefore, the mass flow control sub-engineering flow rate control that has not yet reached the toxic level of the bubble can therefore be properly implemented by θ and the rigid drive liquid Ηj. The first, 2 ... precursor liquid system is only related to these windows 6 :, = package: the collector is made of anticorrosive silver material, the cover 42 W surface and the corrosivity of the precursor liquid τ Λ ... This system is widely used ... I include U 26 to provide ... With the second one, since the optical testers "... are configured in the cover 4? The workers and workers measure 04a, 64b and more. The system does not stop the operation of the system even if the A * 's do not rot the precursor liquid. Various pieces can be swapped out and experimental examples The following experimental examples are implemented to investigate the bubble collection. Z / S collection Advantages of Zhai 26 20 • 200529288 Results: Figure 3 contains schematic diagrams showing the devices used in these experimental examples. As shown in Figure 3, the storage tank 72 holding the titanium tetrachloride liquid is connected to a liquid feed Inlet guide 74 and-pressure delivery conduit 76 for supplying pressurized helium. The following steps are arranged in the liquid feed conduit 74 from the upstream side in this order:-helium saturator 78, _bubble generator ⑼, _Bubble collector%, a liquid mass flow controller 82, a bubble counter 83, a sampler 84, and tail liquid storage 彳 θ 86 -A helium concentration meter 88 is connected to the sampler. A bypass tube 81 is connected in parallel to the bubble collector% to obtain the data of each comparative example without using the bubble collector 26. Using the device shown in Figure 3, At a positive air pressure of 10.3 kPa, a helium supply of pressurized helium from the storage tank 72 at a flow rate of 0.42 liters / minute is used to feed a tetra-gasified titanium liquid. Nitrogen was supplementally fed into the helium saturator 78 to guide the helium concentration in the titanium tetrachloride liquid to the saturation concentration. Then helium was supplementally fed into the titanium tetrachloride liquid by the bubble generator 80 故Helium bubbles were generated. Comparative data were obtained under these conditions using both the bubble collector 26 and the non-bubble collector 26 (using the bypass tube 81).

/; IL Figure 4 contains a graph showing the output of the liquid mass flow controller 82 (represented by the training rate): ⑷ indicates that the bubble trap 26 is not used) indicates that the bubble trap 26 is used. As shown in Fig. 4A, the output of the liquid mass flow controller 82 without using the bubble trap 26 is centered at about 25 volts and has a large main edge waveform of about 1.5 volts and a wavelet of GG5 volts. On the other hand, when the bubble trap 26 is used, the output of the liquid mass flow controller 82 is stable at about 2.5 volts as shown in Fig. 4 (b). Dangde 21.200529288 ,,, knife analysis. In the Hai data, the average output of the liquid mass flow control and λ soil 彳 σσ 82 are in both Figure 4 (a) and Figure 4 (b); ^ >; 〇230 ^ one special, and the standard deviation is Figure 4 (a) is known as 0.230 volts and at ^ ^ ^, ^ (; mouth is 0.03 volts. Therefore, having a child milk bubble collector 26 compared to no ^ ^ ancient 磕 7〇 The degree of stability of the vesicle collector 26 is at 〆 °. In this liquid mass flow control, t ± 7 λλ- standard deviation satisfies S2%. Figure 5 of Figure 1 4 (b) in the H specification contains a display from this The measurement result chart of the bubble counter 83,

: Two (Γ) indicate that the bubble trap '26 is not used and (b) indicates that the bubble trap is used 26 and the right acre and > 〇 ancient p a bubble number with a straight stroke of 0.1 m is determined by the The bubble counter 83 is on the optical side. Bubble counts on 帛 5 (a) and the y-axis in the ⑻ chart are reported in absolute units (AU). As shown in Fig. 5 (a), when the gas f collector 26 is not used, a large 1 bubble is observed in the titanium tetrachloride liquid, and the actual change in the bubble count is also a function of time. It is believed that this change has occurred because the relatively small air bubbles generated in the catheter were temporarily collected in the shai catheter and observed after combining some air bubbles. Conversely, as shown in Fig. 5 (b), when a bubble trap 26 is used, very few bubbles are seen only at the beginning of the measurement. Fig. 6 contains a graph showing measurement results from the helium concentration meter 88, in which (a) indicates that the bubble trap 26 is not used and (b) indicates that the bubble trap 26 is used. The helium concentration on the y-axis in Figures 6 (a) and (b) is reported in AU. As shown in Fig. 6 (a), when the bubble trap 26 is not used, the helium concentration in the titanium tetrachloride liquid actually fluctuates with time. It is thought that this fluctuation is due to whether helium bubbles are generated in the tetra-titanium-titanium liquid. Conversely, as shown in Figure 6 (b), when the bubble collector 26 22 200529288 stabilizes the helium concentration. It is believed that when saturated with this titanium tetrachloride liquid, the titanium tetrachloride liquid has a stable helium concentration at a positive pressure of 0.3 kPa. Therefore, the report reported by the younger brother 4-6: one bite of experience confirms that the bubble collector 26 can completely separate and remove the helium bubbles mixed and emulsified in the titanium liquid and at the same time confirm that the mass flow controller can accurately Control the precursor liquid flow rate. The foregoing embodiments use titanium tetrachloride as an example of the precursor liquid, but the semiconductor processing system and the bubble collector shown in Figs. I and 2 can be widely used for semiconductor processing such as functional elements. Liquid precursors for compounds and amines throughout the field. The halogen compound can be tantalum (V) fluoride, titanium (IV) bromide, titanium (IV) chloride, bromide (IV), chloride (IV), aluminum bromide, boron chloride, chromium bromide , Chromium chloride, chromium fluoride, gallium chloride, gallium bromide, niobium (V) fluoride, phosphorus trichloride, phosphorus tribromide 'phosphorus oxychloride, phosphorus oxybromide, sulfurized gas, dichloride Sulfur, bromide (III), antimony chloride (ΙΠ), gasification record (V), desert fossil, chlorite, hexachloroethane, tin (II) and tin (IV) As a specific embodiment. _ § The amine compounds can be trimethylamine alane, dimethyl ethyl amine alane, methylamine, ethylamine, dimethylamine, diethylamine, and bisdiamine. ;): End (bisdimethylaminosilane), trisdimethylaminosilane, tetrak is dimethyl ami no si lane, trisilylamine, bis ( Bis (tert-butylamino) silane, hex aki s ethyl amino di si lane ^ ethoxydimethylaminotetraethoxy group 23 200529288 (tetraethoxy taut alum dimethyl amino ethoxide) > tetrakis diethyl amino titanium, te tr ak is dime thy lami η o titanium, tetradimethylamino! Report (tetrakis dim ethyl amino zirconium), and tetrakis diethyl aminozirconium 〇 Different modifications and alternatives within the technical scope of the concept of the present invention can be designed by those familiar with the technology, should understand These modifications and alternatives fall within the scope of the invention at the same time. Industrial Applicability As mentioned above, some aspects of the present invention provide a semiconductor processing system and a bubble trap used therein so that the precursor liquid flow rate can be accurately controlled. In addition, some aspects of the present invention provide a semiconductor processing system that can be used in a wide range and a bubble trap used therefor. [Schematic description] Intent. FIG. 1 includes a semiconductor processing system according to an embodiment of the present invention. Figure 2 contains air bubbles used in the half-carcass treatment system shown in 处理 1 «

Schematic diagram of the device used. Used to check the effect of the bubble collector in the experiment

Bubble collector. The output of the liquid mass flow controller in the figure device ^ the bubble collector and (b) indicates the use of the gas radon. Figure 5 contains the measurement from the bubble counter in the figure device. 24 ^ 200529288 Result chart, where the radon indicator is not The bubble collector. (B) indicates the use of the bubble trap and (b) indicates the use of the measurement results from the helium concentration meter included in Figure 3, and (a) indicates that the bubble trap is not used ( b) Instruct the use of the bubble trap. Brother 7 Figures Contains Description

A schematic diagram of the precursor liquid feed section of a dry conductor processing system using a liquid as a precursor for X semiconductor processing. [Description of main component symbols] 5 to clean room 10, semiconductor processing device 11-'processing edge frame 12, processing compartment 14, -lower electrode 16, -upper electrode 18, "exhaust system 19, 30 gas feed Inlet system 21, gas feed conduit 22, "steamer 24, 82 liquid mass flow control 26, bubble trap 32, ^ 72 front storage area 34, > 74 liquid feed conduit 36, • 76 Pressure delivery conduit 38-'Feeding edge frame 25 • 200529288 42 ~ Case 44 ~ Partition compartment 5 4 ~ Solenoid valve 58 ~ Filter 62a, 62b ~ Window 64a, 64b ~ Optical sense Detector 66 ~ Controller 7 8 ~ Randomly saturated 80 ~ Bubble generator 81 ~ Bypass tube 8 3 ~ Bubble counter 84 ~ Sampler 86 ~ Waste liquid storage tank 88 ~ Helium concentration meter

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Claims (1)

• 200529288 10. Application patent scope: 1 * Semiconductor processing system, its features are equipped with: a processing compartment that supports the substrate and executes the _semiconductor process; and, a drive storage tank, which is stored in the semiconductor process The precursor liquid used; the liquid version feeds the guide, which is connected to the precursor storage tank and feeds the precursor liquid from the precursor storage tank; I force input: ¾ guide, which is connected to the storage A precursor storage tank having a precursor liquid and feeding a pressurized gas into the precursor storage tank to transport the precursor liquid moon beans out of the precursor storage tank and into the liquid feeding conduit; this treatment A distiller connected to the liquid feed conduit and generating a process gas by distilling the precursor liquid; a gas feed conduit that connects the distiller to the processing compartment and directs the process gas from the distiller Feed to the processing compartment; a shell-flow control line, which is arranged upstream of the steamer in the liquid feed conduit; and a lubricator, which is located in the liquid feed conduit, to the steaming hall. on And the mass flow controller; wherein the bubble collector has a baffle compartment to separate the body of the precursor and the pressurized bubble originating from the pressurized gas and mixed into the precursor liquid, wherein the The bottom of the partition plate compartment has a liquid limb inlet that introduces the precursor liquid and a liquid outlet that discharges the precursor liquid, and the top of the partition plate compartment has a gas outlet that discharges a gas that is isolated from the precursor liquid. 27 200529288 2. The semiconductor device as described in item No. of the Chinese Patent Application, characterized in that the air bubble collector has, and is, a sensor, which is disposed outside the partition compartment to measure the wind. The water level of the precursor liquid; the photon-type detection valve is connected to the wide gas outlet; and the sub-selective opening of the controller to the domain outlet closes the exhaust valve. It opens according to the measurement signal from the optical sensor. 3 'The semiconductor processing system as described in item 2 of the scope of the patent application, 1 is characterized in that a filter for restricting the central air flow from the breast milk outlet is arranged at the gas outlet and the foregoing Between the exhaust valves. (The semiconductor processing system described in item 2 or 3 of the scope of the patent application is characterized in that the optical sensor is equipped with a first optical sensor and a second optical sensor, which are respectively arranged on the partition. The upper and lower limits of the precursor liquid surface in the compartment. 5. The semiconductor processing system described in item 4 of the scope of patent application, characterized in that the bubble collector is provided with a window feature formed in the aforementioned enclosure The liquid level of the precursor liquid in the partition compartment can be optically monitored from the outside, among which 'the first and second optical sensors optically detect the liquid level of the precursor through this window. 6 · 如The semiconductor processing system according to item 6 of the scope of the patent application, characterized in that the window is equipped with a first window and a second window, which are respectively arranged corresponding to the first and second optical sensors. 7 · 如The semiconductor unit described in any one of the scope of the patent application No. 28 200529288 Management system is characterized in that the liquid level of the precursor liquid in the partition compartment corresponds to the south from the precursor storage tank to The bubble collector is set in such a way that the height of the precursor liquid level between the steamers is the highest. /. As described in any one of item 7 of the scope of patent application: a semiconductor processing system, characterized in that the bubble collector The length of the liquid feed conduit between the device and the mass flow controller is not more than 50 cm. / 9. For example, please refer to the "Scope of any patent-Semiconductor processing system", which is characterized by a processing edge An outer frame that forms an area space surrounding the processing compartment, the still, the mass flow controller, and the bubble collector 'wherein' the area space within the outer frame of the processing edge is exhausted using an exhaust system, It is ordered that the precursor storage tank is arranged outside the processing edge frame. 10. The semiconductor processing system as described in the item of the U-Range, wherein the precursor liquid system is a halogen compound or an amine. 11. A bubble trap arranged near a upstream of a mass flow controller in a liquid feed conduit of a semiconductor processing system, the bubble trap is characterized by a It forms a baffle compartment to separate the precursor liquid from the pressurized gas derived from the pressurized gas and mixed into the precursor liquid, wherein the bottom of the partition plate compartment 44 has a A liquid inlet and a liquid outlet for discharging the precursor liquid, and a gas outlet σ for discharging a gas separated from the precursor liquid is provided on the top of the partition plate; 29 200529288 a first window and a second window, It is formed in the enclosure in such a way that the liquid level of the precursor liquid in the partition compartment can be optically monitored from the outside; a first optical sensor and a second optical sensor, which are It is arranged at different heights of the first position and the second position outside the partition compartment, and optically detects the liquid level of the precursor through the first and second windows respectively; an exhaust chamber connected to The gas outlet and selectively opening the gas outlet; and Test # to open and close the exhaust valve. The bubble collector as described in item 11 of the scope of patent application is used in particular, between which a filter 'gas outlet restricting the gas flow from the gas outlet and the aforementioned exhaust valve. " In this 13. If you apply for the 12th patent in the scope of patent application, the cv value of the opening of the ferrule is 1χ1, ...: bubble collector ’ 14. If the scope of the patent application is from item " to 13: 1Xl0_3. Bubble collector, inside and outside + μ The name of the temple is that the cover actually includes ^ Nickel alloy, group, alloy, niobium, ... selected from non-recorded steel, nickel, group Material *, and this bubble: two: and the titanium alloy group is composed of materials selected from the group consisting of thermal tempered glass, quartz and Zhixin windows. XI. Schematic: Like the next page. 30