200524050 五、發明說明⑴ 【發明所屬之技術領域】 本發明係有關於一種積體電路之構裝技術，特別是有 關於一種應用在積體電路和顯示器間之構裝技術。 【先前技術】 一些現有的電子裝置中，元件與主體電路間的連接是 透過導電膜（例如異方向性導電膠，簡稱ACF )來進行。 異方向性導電膠ACF是以非導電性的合成樹脂與導電粒子 (conductive particle)混合而成，導電粒子丨如第1人圖 的剖面圖所示，其直徑大約為3〜5//m，其中央部分“為 聚合物，而在外面包覆以金屬導體lb，如金、鎳、錫等。 ACF常被用於液晶顯示器的製造，有的是用於將面板 的驅動晶片直接封裝於玻璃基板上的製造方法（業界通稱 為C0G，即chip on glass )，或者將該驅動晶片接合至軟 性電路板（C0F，即chip 〇n Film)、再接合至基板的方 法。此外，ACF也適用於將晶片接合於一般印刷電路板 (C0B，即chip on board)的製程中。 如第1 B圖所不，以基板4表示上述的玻璃基板、軟性 電路板、印刷電路板或其他電路板件。在製造中，其基板 4上形成有金屬墊（pad ) 4a，用以供各種訊號、能量傳200524050 V. Description of the invention ⑴ [Technical field to which the invention belongs] The present invention relates to a construction technology of an integrated circuit, and more particularly to an installation technology applied between an integrated circuit and a display. [Prior art] In some existing electronic devices, the connection between the component and the main circuit is performed through a conductive film (such as anisotropic conductive adhesive, referred to as ACF). Anisotropic conductive adhesive ACF is a mixture of non-conductive synthetic resin and conductive particles. As shown in the cross-sectional view of the first figure, the diameter of the conductive particles is about 3 ~ 5 // m. Its central part is "polymer, and it is covered with a metal conductor lb, such as gold, nickel, tin, etc .. ACF is often used in the manufacture of liquid crystal displays, and some are used to directly package the driver chip of the panel on a glass substrate. Manufacturing method (commonly known by the industry as C0G, or chip on glass), or a method of bonding the driver chip to a flexible circuit board (C0F, that is, chip on film), and then bonding to the substrate. In addition, ACF is also applicable to chip It is bonded to a common printed circuit board (C0B, ie, chip on board) process. As shown in FIG. 1B, the above-mentioned glass substrate, flexible circuit board, printed circuit board, or other circuit board component is represented by the substrate 4. In manufacturing In the substrate 4, a metal pad 4a is formed on the substrate 4 for various signals and energy transmission.
200524050 五、發明說明（2) 遞。另一方面，在晶片3的 (—P)3a。驅動晶片3 =成較厚之導電凸塊 (ACF) 5，然後加熱改變里 之間置入異方向性導電膠 度，接著壓合驅動晶片3 ^ °性導電膠（ACF) 5的黏滯 導電凸塊3a之間必須是相互土對反^ ’此時對應之金屬墊4a與 由於導電凸塊3a具有—定之戸 電凸塊3a與金屬墊牦之間 ^f，導電粒子1會在導 屬層lb，被擠壓之導電粒 。藉由其外周面包覆之金 之間構成電性連接。利用A j便在導電凸塊3a與金屬墊4a 成黏合驅動晶片3與電路片封裝’便可同時完 應用ACF進行晶片封|味木 不當之遷移（migration)=你*見的問題是導電粒子的 滯度下降，在壓合導電& ;加熱後ACF中樹脂部分的黏 電凸塊3a與金屬仏間：導電… 的電阻增加。再者，另粒子1數置太少，而使麵接 如工1卷丄 另 問喊如第1D圖所示，太多的導雷 2子t於的導電凸塊3a間’而產生側向的電性連 接，亦即對相鄰的導雷Λ地0也丄 W π曰7电庄連 路。在晶片功能日漸辦力。ί目㈣金屬塾4 a造成短 增加的情況下，短路二題=:ΐ上的接腳數目隨之 凸塊面積之縮小，導==越谷易發生。而隨著金 生。 导電粒子捕捉率不足之現象亦容易發 第5頁 0632-A50019TWF(Nl) ； AU0307024 ； Wayne.ptd 五、發明說明（3) 【發明内容】 有鑑於此，為了解決上述問題， 種增加金屬連線可靠度的結構，=2片目二在：： 結構之金屬凸塊，以增加對於acf之導電：子之、 板金屬墊結合之拉力強度。 以如间日日片與玻璃基 為達成上述目的，本發明提供一種增加金屬連& 度的結構，其包括複數個金屬凸塊位於二 金屬凸塊在鄰接該基板的另一 亡二板上，且母一 J ^ 面上具有複數個凹槽。 為了讓本發明之上述和其他目# 明顯易僅，下文特舉一較伟垂 寺戊ί俊點此更 詳細說明如下： 只鉍例，並配合所附圖示，作 【實施方式】 實施例 請同時參照第2圖及第q_ 加金屬連線可靠度的結構之系綠示出本發明增 係沿第2圖3-3,之剖面圖又貝％列之平面圖。第3圖 是半導體基板之第一基板20^個=:塊202位於-例如 4上’在本較佳實施例中，其 200524050 五、發明說明（4) 半導體基板204係為一矽晶片，其金屬凸塊2〇2較佳為金所 組成，係形成在矽晶片204上連接晶片的金屬電極（未顯 示），且金屬凸塊202在鄰接第一基板2〇4的另一面上且有 複數個凹槽206。其凹槽206較佳為矩形或方形，且以矩陣 方式排列以形成一格子狀結構之金屬凸塊2 〇 2。需注意的 是其矩形凹槽20 6的最短邊需較異方向性導電膠（ACF)之導 電粒子208的直徑為長，以使其格子狀結構之金屬凸塊2〇2 能有效抓取導電粒子208。其導電粒子直徑大約為3〜5私 m，其中央部分為聚合物，而在外面包覆以金屬導體，如 金、鎳、錫等。 其後，在壓合第一基板204上之金屬凸塊2〇2，在和例 如是玻璃基板或是樹脂基板的第二基板21〇上之金屬塾& ^其在對兩基板2G4、21G間之ACF進行加熱，及高壓黏 者％，因其格子狀結構2〇6使其acf之導電粒子2 〇8不容易 向周圍擴散遷移’因此可有效抓取導電粒子2〇8於凹槽中 206，增加導電粒子2〇8之抓取機率。此夕卜，其格子狀結構 上Λ 以如第4圖所示具有四個矩陣排列之凹槽 ’及第5®所不具有兩個並排之凹槽5〇2，上述兩者皆 可以增加對於導電粒子之抓取機率。 形成方式 其格子狀結構之金屬&塊2〇2之一較佳形成方式為在 第7頁 0632-A50019TWF(N1) ； AU0307024 ； Wayne.ptd 200524050200524050 V. Description of Invention (2) Submit. On the other hand, (-P) 3a of wafer 3 is used. Drive chip 3 = thicker conductive bump (ACF) 5 and then heat to change the degree of different direction conductive adhesive placed inside, then press the drive chip 3 ^ ° conductive conductive adhesive (ACF) 5 viscous conductive The bumps 3a must be opposite to each other ^ 'At this time, the corresponding metal pad 4a and the conductive bump 3a have-between the electrical bump 3a and the metal pad 牦 f, the conductive particles 1 will be in the conductive metal Layer lb, the extruded conductive particles. An electrical connection is formed between the gold coated on the outer peripheral surfaces. Use Aj to bond the conductive bumps 3a and the metal pad 4a to drive the chip 3 and the circuit chip package. Then you can use ACF to seal the chip at the same time. | Migration of improper wood = the problem you see is conductive particles The hysteresis of the resin decreases, and the adhesion between the viscoelastic bump 3a of the resin part and the metal ridge in the ACF after pressing and heating: the electrical resistance increases. In addition, the number of particles 1 is too small, so that the surface is connected as described in the first volume. As shown in FIG. 1D, too many lightning conductors are placed between the conductive bumps 3a to generate a lateral direction. The electrical connection, that is, the adjacent lightning guide Λ ground 0 also 丄 W π 7 electric connection. Increasing power in chip functions. In the case where the metal 塾 4a causes a short increase, the short-circuit problem # 2: the number of pins on the 随之 decreases with the area of the bumps, and the conduction is easy to occur. And with Jin Sheng. The phenomenon of insufficient capture rate of conductive particles is also easy to occur Page 5 of 0632-A50019TWF (Nl); AU0307024; Wayne.ptd V. Description of the invention (3) [Abstract] In view of this, in order to solve the above problems, an increase in metal connection The structure of the line reliability, = 2 pieces of mesh in :: the metal bumps of the structure to increase the conductivity of the acf: the strength of the tensile strength of the combination of the sheet metal pads. In order to achieve the above-mentioned object, such as Rima-Japanese film and glass substrate, the present invention provides a structure for increasing metal connection, which includes a plurality of metal bumps located on two metal bumps on another second board adjacent to the substrate. , And there are a plurality of grooves on the mother plane J ^. In order to make the above and other objects of the present invention significantly easier, the following is a more detailed description of the following example from Wei Chui Temple: Only an example of bismuth and the accompanying drawings are used as the [embodiment] Examples Please refer to FIG. 2 and the structure of the q_ plus metal connection reliability system at the same time. The green line of the present invention is shown in the cross-sectional view of FIG. FIG. 3 is the first 20 substrates of the semiconductor substrate =: the block 202 is located on, for example, 4 ′. In the preferred embodiment, it is 200524050. V. Description of the invention (4) The semiconductor substrate 204 is a silicon wafer. The metal bump 202 is preferably made of gold, and is formed on the silicon wafer 204 with a metal electrode (not shown) connected to the wafer, and the metal bump 202 is on the other surface adjacent to the first substrate 204 and has a plurality of numbers. A groove 206. The grooves 206 are preferably rectangular or square, and are arranged in a matrix manner to form a metal bump 202 of a lattice structure. It should be noted that the shortest side of the rectangular groove 20 6 needs to be longer than the diameter of the conductive particles 208 of the anti-directional conductive adhesive (ACF), so that the metal bumps 202 of the lattice structure can effectively grasp the conductive Particles 208. Its conductive particles have a diameter of about 3 to 5 μm. Its central part is a polymer, and the outer surface is covered with a metal conductor, such as gold, nickel, tin, and the like. Thereafter, the metal bumps 200 on the first substrate 204 are laminated, and the metal bumps on the second substrate 21, which is, for example, a glass substrate or a resin substrate, are applied to the two substrates 2G4, 21G. Between the ACF heating and high-pressure adhesion, the lattice-shaped structure 206 makes the conductive particles 208 of the acf difficult to diffuse to the surroundings, so it can effectively grasp the conductive particles 208 in the groove. 206. Increase the grasping probability of conductive particles 208. In addition, the lattice-shaped structure Λ has grooves with four matrix arrangements as shown in FIG. 4 and two side-by-side grooves 502 not included in the 5th, both of which can be increased. Probability of grabbing conductive particles. Forming method One of the metal & block 2 of its lattice structure is preferably formed on page 7 0632-A50019TWF (N1); AU0307024; Wayne.ptd 200524050
五、發明說明（5) 金f凸塊形成後再以黃光、蝕刻圖形化其金屬凸塊成為具 有複數個，槽2 〇 6之格子狀結構。此外其另一較佳之形成 =式，如第6圖所示，為在晶片上金屬凸塊6〇2尚未形成 前，先形成係由樹脂組成的格子狀結構6〇4於預定形成金 屬凸塊602之區域上，之後以電鍍方式形成金屬凸塊6〇2 付，其金屬凸塊即因高差的影響在表面6〇6形成格子狀妹 【本發明之特徵和優點】 本發 藉由 構 塊，以增 之一優點 塊和金屬 題，故可 塊與膠材 其凹槽結 本發明亦 明之特徵在於提供一種增加金屬連線可靠度的結 在晶片上形成具有複數個凹槽之格子狀的金屬凸 加對於ACF之導電粒子之抓取機率，因此本發明 為在壓合第一基板和第二基板時，可改盖金屬凸 墊導電粒子數目不足，而使耦接之電阻^加之問 以增加產品的穩定性。此外在凹槽 :較大之接觸面積’可增加其拉力強度籌中=為 ^可增加導電粒子與金屬凸塊之導通接觸面積， 具有減低耦接電阻之優點。 雖然本發明已以較佳實施 限定本發明，任何熟習此技藝 和範圍内，當可作些許之更動 例揭露如上，然其並非用以 者，在不脫離本發明之精神 與潤飾’因此本發明之保護V. Description of the invention (5) After the gold f bumps are formed, the metal bumps are patterned with yellow light and etching to form a lattice structure having a plurality of grooves 206. In addition, another preferred formation formula is as shown in FIG. 6. Before the metal bumps 602 on the wafer have been formed, a grid-like structure 604 composed of resin is first formed and metal bumps are scheduled to be formed. In the area of 602, metal bumps 602 are formed by electroplating, and the metal bumps form a grid-like girl on the surface 606 due to the effect of the difference in height. [Features and advantages of the present invention] Block, with the advantage of adding one block and metal question, so the block can be glued to the groove of the glue material. The invention also features a knot that increases the reliability of the metal connection to form a grid shape with a plurality of grooves on the wafer. The metal bumps increase the probability of grasping the conductive particles of the ACF. Therefore, when the first substrate and the second substrate are pressed together, the present invention can cover the insufficient number of conductive particles on the metal bumps, so that the resistance of the coupling is increased. To increase product stability. In addition, in the groove: a larger contact area ′ can increase its tensile strength == ^ can increase the conductive contact area between the conductive particles and the metal bump, which has the advantage of reducing the coupling resistance. Although the present invention has been limited to the present invention by preferred implementations, anyone familiar with this technique and scope can make some modifications as disclosed above, but it is not intended to be used without departing from the spirit and finishing of the present invention. Protection
200524050 五、發明說明（6) 範圍當視後附之申請專利範圍所界定者為準。200524050 V. Description of invention (6) The scope shall be determined by the scope of the attached patent application.
0632-A50019TWF(Nl) ； AU0307024 ； Wayne.ptd 第9頁 200524050 圖式簡單說明 第1 A圖係顯示典型之導電顆粒結構。 第1 B圖係顯示驅動晶片與玻璃基板之ACF接合法示意 圖。 第1C、1 D圖係顯示傳統之ACF接合方式常見的問題。 第2圖係繪示出本發明增加金屬連線可靠度的結構之 較佳實施例之平面圖。 第3圖係沿第2圖3-3’之剖面圖。 第4圖係繪示出本發明增加金屬連線可靠度的結構之 另一較佳實施例之平面圖。 第5圖係繪示出本發明增加金屬連線可靠度的結構之 又另一較佳實施例之平面圖。 第6圖係繪示出本發明增加金屬連線可靠度的結構之 另一較佳之形成方式示意圖。 【符號說明】 習知技術 導電顆粒〜1 ; 金屬層〜1 b ; 晶片〜3 ， 導電凸塊〜3 a ; 基板〜4 ; 金屬塾〜4 a ; ACF 〜5 〇0632-A50019TWF (Nl); AU0307024; Wayne.ptd Page 9 200524050 Brief description of the drawings Figure 1 A shows the typical structure of conductive particles. Fig. 1B is a schematic diagram showing an ACF bonding method of a driving wafer and a glass substrate. Figures 1C and 1D show the common problems of traditional ACF joining methods. Fig. 2 is a plan view showing a preferred embodiment of the structure for increasing the reliability of the metal wiring according to the present invention. Fig. 3 is a sectional view taken along Fig. 3-3 '. Fig. 4 is a plan view showing another preferred embodiment of the structure for increasing the reliability of the metal wiring according to the present invention. Fig. 5 is a plan view showing still another preferred embodiment of the structure for increasing the reliability of the metal wiring according to the present invention. Fig. 6 is a schematic diagram showing another preferred method of forming the structure for increasing the reliability of the metal wiring according to the present invention. [Symbol description] Conventional technology: conductive particles ~ 1; metal layer ~ 1b; wafer ~ 3, conductive bumps ~ 3a; substrate ~ 4; metal 塾 ~ 4a; ACF ~ 5 〇
0632-A50019TWF(Nl) ； AU0307024 ； Wayne.ptd 第10頁 200524050 圖式簡單說明 本發明技4标: 金屬凸塊〜202、602 ; 第一基板〜2 0 4 ; 凹槽〜2 0 6、4 02、5 02 ; 導電粒子〜2 0 8 ; 第二基板〜21 0 ; 金屬墊〜21 2 ; 樹脂格子狀結構〜6 04 ; 金屬凸塊的表面〜606。0632-A50019TWF (Nl); AU0307024; Wayne.ptd Page 10 200524050 The figure briefly explains the technology of the present invention: 4: metal bumps ~ 202, 602; first substrate ~ 2 0 4; grooves ~ 2 0 6, 4 02, 5 02; conductive particles ~ 2 0 8; second substrate ~ 21 0; metal pad ~ 21 2; resin lattice structure ~ 6 04; surface of metal bump ~ 606.
0632-A50019TWF(Nl) ； AU0307024 ； Wayne.ptd 第 11 頁0632-A50019TWF (Nl); AU0307024; Wayne.ptd page 11