TW200523599A - LCD device and manufacturing method thereof and transistor array substrate and manufacturing method thereof - Google Patents

LCD device and manufacturing method thereof and transistor array substrate and manufacturing method thereof Download PDF

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TW200523599A
TW200523599A TW93100036A TW93100036A TW200523599A TW 200523599 A TW200523599 A TW 200523599A TW 93100036 A TW93100036 A TW 93100036A TW 93100036 A TW93100036 A TW 93100036A TW 200523599 A TW200523599 A TW 200523599A
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layer
substrate
liquid crystal
crystal display
scope
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TW93100036A
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Chinese (zh)
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TWI227352B (en
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Yaw-Ming Tsai
Jia-Hung Sun
Shih-Chang Chang
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Toppoly Optoelectronics Corp
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Abstract

The invention discloses a LCD device and manufacturing method thereof and transistor array substrate and manufacturing method thereof. The manufacturing method of the aforementioned LCD device includes: providing a substrate formed with an etched barrier layer thereon, forming a source-drain area on the etched barrier layer, forming an insulation layer on the etched barrier layer, disposing a plurality of mutually parallel gate lines and a plurality of mutually parallel data lines on the insulation layer which the gate lines are perpendicular to the data lines, defining a display area bounded by two adjacent data lines and two adjacent data lines, forming electrical connection between the mentioned source and one of the two adjacent data lines, etching the insulation layer of the display area until the barrier layer is exposed so as to increase the light penetration, forming a pixel electrode on a protection layer of the display area and forming an electrical connection between the pixel electrode and the drain, providing a second substrate disposed on top of the first substrate, bonding the first and the second substrates, and filling liquid crystal between the first and the second substrates.

Description

200523599 五、發明說明(1) ·~" ' -—;"; 發明所屬之技術領域 本發明係有關於液晶顯示器及其製作方法,特別有關 於可改善牛頓環現象的液晶顯示器及其製作方法。 先前技術 液晶顯示器(1 i qu i d cr y s t a 1 d i sρ 1 ay,以下簡稱 LCD)是目前平面顯示器發展的主流,其顯示原理是利用液 晶分子所具有的介電異方性及導電異方性,於外加電場時 使液晶分子的排列狀態轉變,造成液晶薄膜產生各種光電 效應。 液晶顯示器的面板結構一般為由兩片基板疊合而成, 中間留有一定距離的空隙用以灌注液晶,而在上下兩基板 上分別形成有對應電極,用以控制液晶分子的轉向及排 列。 一般薄膜電晶體(Thin Fi lm Transistor ; TFT)液晶 顯示器的面板係由一片設置有薄膜電晶體陣列的TF T陣列 基板及一片設置有彩色濾光膜層的彩色濾光片基板所組 成’以下參照第1圖說明TFT陣列基板的詳細結構。 第1圖顯示一 T F T陣列基板之部分剖面圖。如圖1所 示,在一絕緣基板(例如玻璃、石英等)1 〇 1上設置有一多 晶石夕層,其區分為摻有雜質之源極區丨〇 2、汲極區i 〇 3,以 及通道區1 0 4 ;閘極絕緣層1 〇 7覆蓋於絕緣基板丨〇 1之上; 閘極1 0 8設置於閘極絕緣層1 〇 7之上;一層間絕緣層1 1 2覆 蓋於基板1 0 1之上;在層間絕緣層丨丨2與閘極絕緣層1 〇 7之200523599 V. Description of the invention (1) · ~ "'---; "; TECHNICAL FIELD OF THE INVENTION The present invention relates to a liquid crystal display and a method for manufacturing the same, and more particularly, to a liquid crystal display capable of improving Newton's ring phenomenon and the manufacturing thereof. method. The prior art liquid crystal display (1 i qu id cr ysta 1 di sρ 1 ay, hereinafter referred to as LCD) is the mainstream of current flat display development. Its display principle is to use the dielectric anisotropy and conductive anisotropy of liquid crystal molecules. When an electric field is applied, the arrangement state of liquid crystal molecules is changed, which causes various photoelectric effects of the liquid crystal film. The panel structure of a liquid crystal display is generally formed by stacking two substrates, with a certain gap in the middle to fill the liquid crystal, and corresponding electrodes are formed on the upper and lower substrates, respectively, to control the orientation and alignment of the liquid crystal molecules. The panel of a general thin film transistor (TFT) liquid crystal display is composed of a TF T array substrate provided with a thin film transistor array and a color filter substrate provided with a color filter film layer. FIG. 1 illustrates a detailed structure of a TFT array substrate. FIG. 1 shows a partial cross-sectional view of a T F T array substrate. As shown in FIG. 1, a polycrystalline silicon layer is provided on an insulating substrate (such as glass, quartz, etc.) 〇1, which is divided into a source region doped with impurities 〇 02, a drain region i 〇3 And the channel area 104; the gate insulating layer 107 is covered on the insulating substrate 010; the gate 108 is disposed on the gate insulating layer 107; and an interlayer insulating layer 1 12 is covered On the substrate 1 01; between the interlayer insulation layer 丨 2 and the gate insulation layer 1 〇7

0773-10405TWF(Nl);P92051;phoe1i p.p td 第5頁 200523599 五、發明說明(2) 間形成有相通之接觸洞1 1 0、1 1 1 ,而源極電極1 2 2經由接 觸洞1 1 0與源極區1 0 2電性相連;汲極電極1 2 3經由接觸洞 1 1 1與汲極區1 0 3電性相連。一保護層1 3 〇覆蓋於源極電極 122、·汲極電極123及基板101上,其具有一接觸洞13〇a, 使畫素電極1 0 5與汲極電極1 2 3電性相連。 將此基板1 0 1與一彩色濾光片基板組合後即成為一液 晶顯示器面板。在第1圖中,晝素電極丨0 5所在區域為預定 的顯示區(即透光區),由於此區域中閘極絕緣層1 〇 7、 層間絕緣層1 1 2等絕緣層並未移除,因此在面板製作完成 後’外界的入射光會在此一透光區上的絕緣層形成反射, 進而與在彩色濾光片基板上反射的光線形成干涉條紋,而 形成牛頓環現象’影響液晶顯示器的外觀。此外,透光區 上方的絕緣層過厚也會吸收背光,減少光的亮度而消耗背 光的能源。 發明内容 有鑑於此,本發明的目的在於改善液晶顯示器的牛頓 環現象’並減少背光能量的消耗。 為達上述目的,本發明藉由移除顯示區(即透光區) 上方的絕緣層,㈣免外界光在入射液晶面板並經由透光修 區絕緣層反射後會形成的牛頓環現象。此外,矛多除透光區 上的絕緣層可提升背光的穿透率, 消耗的功能。 %|因而達到減少背光能量 本發明所提供之液晶顯示器面板包括一上基板、一液0773-10405TWF (Nl); P92051; phoe1i pp td Page 5 200523599 V. Description of the invention (2) A contact hole 1 1 0, 1 1 1 is formed between them, and a source electrode 1 2 2 passes through the contact hole 1 1 0 is electrically connected to the source region 1 0 2; the drain electrode 1 2 3 is electrically connected to the drain region 1 0 3 through the contact hole 1 1 1. A protective layer 130 covers the source electrode 122, the drain electrode 123, and the substrate 101, and has a contact hole 130a to electrically connect the pixel electrode 105 to the drain electrode 1 2 3. This substrate 101 is combined with a color filter substrate to form a liquid crystal display panel. In the first figure, the area where the daylight electrode 丨 0 5 is located is a predetermined display area (that is, a light-transmitting area). Since the insulating layers such as the gate insulating layer 107 and the interlayer insulating layer 1 12 are not moved in this area. In addition, after the panel is manufactured, 'the external incident light will reflect on the insulating layer on this transparent area, and then form interference fringes with the light reflected on the color filter substrate, thereby forming a Newton's ring phenomenon'. The appearance of the LCD monitor. In addition, too thick an insulating layer above the light-transmitting area will also absorb the backlight, reducing the brightness of the light and consuming the energy of the backlight. SUMMARY OF THE INVENTION In view of this, the object of the present invention is to improve the Newton's ring phenomenon of a liquid crystal display and reduce the consumption of backlight energy. In order to achieve the above object, the present invention avoids the Newton's ring phenomenon formed by external light entering the liquid crystal panel and reflecting through the insulating layer of the transparent repair region by removing the insulating layer above the display area (ie, the light transmitting area). In addition, removing the insulating layer on the light-transmitting area can increase the transmittance of the backlight and consume functions. % | Thereby reducing backlight energy The liquid crystal display panel provided by the present invention includes an upper substrate, a liquid

200523599 五、發明說明(3) ^ 晶層及一下基板,其中下基板上形成有一蝕刻阻擋層;一 源極-汲極區形成於蝕刻阻擋層上,一絕緣層覆蓋上述钱 刻阻擋層,且在顯示區(透光區)暴露出蝕刻阻擋層;複數 條相互平行之閘極線與複數條相互平行之資料線設置於上 述絕緣層上’其中閘極線與資料線係垂直相交,在相鄰二 閘極線與相鄰二資料線間定義為上述透光區,且源極係與 相鄰二資料線中之一資料線形成電性連接;一畫素電極形 成於透光區之一保護層上,且與汲極形成電性連接。 本發明亦提供一種液晶顯示器之電晶體陣列基板,包 括:一基板,其上定義有一電晶體區及一顯示區;一蝕刻 阻擔層形成於基板上;一電晶體設置於電晶體區的蝕刻阻 播層上,一保護層覆蓋於電晶體及顯示區之上;以及一晝 素電極形成於保護層上,且經由一接觸洞與電晶體形成電 性連接。 本 方法, 成一源 阻擋層 行之資 間定義 線中之 出蝕刻 素電極 本 電晶體陣列基板的製作 成有一钱刻阻播層;形 形成一絕緣層於蝕刻 閘極線與複數條相互平 閘極線與相鄰二資料線 上述源極與相鄰二資料 刻透光區之絕緣層至露 的光穿透度;形成一晝 與汲極形成電性連接。 的製作方法,包括:提 發明尚提供一種液晶顯示器 包括:提供一基板,其上形 極-沒極區於钱刻阻擔層上; 上,设置複數條相互平行之 料線於絕緣層上,在相鄰二 為一顯示區(即透光區),且 一資料線形成電性連接;姓 阻擔層為止,以增加透光區 於透光區上,且此晝素電極 發明尚提供一種液晶顯示器200523599 V. Description of the invention (3) ^ a crystal layer and a lower substrate, wherein an etch barrier layer is formed on the lower substrate; a source-drain region is formed on the etch barrier layer; an insulating layer covers the above-mentioned money-blocking layer, and An etching barrier layer is exposed in the display area (light-transmitting area); a plurality of gate lines parallel to each other and a plurality of data lines parallel to each other are disposed on the above-mentioned insulation layer, where the gate lines and the data lines intersect perpendicularly, and The adjacent two gate lines and the adjacent two data lines are defined as the aforementioned light-transmitting area, and the source is electrically connected to one of the adjacent two data lines; a pixel electrode is formed in one of the light-transmitting areas. On the protective layer and forming an electrical connection with the drain. The invention also provides a transistor array substrate for a liquid crystal display, comprising: a substrate on which a transistor region and a display region are defined; an etching resist layer is formed on the substrate; and a transistor is disposed in the transistor region for etching. On the broadcast blocking layer, a protective layer covers the transistor and the display area; and a day electrode is formed on the protective layer and is electrically connected to the transistor through a contact hole. In this method, an etching element electrode is formed in a line defining a line of a source barrier layer. The transistor array substrate is fabricated into a resist etching layer; an insulating layer is formed to etch the gate line and a plurality of mutually flat gates. Polar line and adjacent two data lines The above-mentioned source and the adjacent two data engraved light-transmitting areas of the insulating layer to the exposed light transmittance; forming a day to form an electrical connection with the drain electrode. The manufacturing method includes: providing a liquid crystal display device including: providing a substrate with an upper electrode-non-electrode region on a money-carrying resist layer; and providing a plurality of parallel material lines on the insulating layer, A display area (that is, a light-transmitting area) is adjacent to each other, and a data line forms an electrical connection; the last layer is a barrier layer to increase the light-transmitting area on the light-transmitting area. LCD Monitor

200523599 五、發明說明(4) ^ ‘ \ 供一第一基板’其上形成有一蝕刻阻擋層;形成一源極― 沒極區於該透明餘刻阻擋層上;形成一絕緣層於上述透明 I虫刻阻擔層上;設置複數條相互平行且朝橫向延伸之閘極 線於上α述絕緣層上’並在各閘極線間定義有至少一顯示區 (透光區),钱刻該透光區之絕緣層至露出該蝕刻阻擋層為 止’以增加透光區的光穿透度;設置複數條相互平行且朝 縱向延伸之貧料線於上述絕緣層上,其避開上述透光區的 位置與上述閘極線垂直相交,並且與該源極形成電性連 ,,升y成旦素電極於該透光區上,且該晝素電極與該汲 =成電性連接;提供一第二基板,其設置於相對應第一 上述兩基板之間。*反及第一基板,以及灌注液晶於 根據本發明,上述蝕刻阻擋 質並無限定,可為氧化銦錫(1季·^圭為透明材負’其材 根據本發明,上述基板可為破鋅(ΙΖ0)。 可為氧化銦錫或氧化銦辞。 舆或石央,畫素電極層 根據本發明,上述液晶顯示 該相鄰二閉極線中之-間極線相連了 2=閉極,其與 極區。 用以驅動該源極-汲 根據本發明,上述液晶顯 . 經由穿過絕緣層之—接觸洞而盥相:製::法中之源極可 線形成電性連接;晝素電極可經由=一貝科線中之一資料 洞而與汲極形成電性遠接。+从穿過絕緣層之另一接觸 層步驟可在敍刻上述;:洞::時:刻透光區下方之絕緣 進仃,亦即移除透光區200523599 V. Description of the invention (4) ^ '\ A first substrate' is formed with an etch barrier layer thereon; a source-an electrode region is formed on the transparent remaining barrier layer; an insulating layer is formed on the transparent I Insect-carved barrier layer; a plurality of gate lines parallel to each other and extending in the lateral direction are arranged on the above-mentioned insulating layer ', and at least one display area (light-transmitting area) is defined between the gate lines, The insulating layer in the light-transmitting area is exposed until the etching barrier layer is exposed to increase the light transmittance of the light-transmitting area; a plurality of lean material lines parallel to each other and extending in the longitudinal direction are arranged on the above-mentioned insulating layer, which avoids the above-mentioned light transmission The position of the region intersects the gate line perpendicularly and forms an electrical connection with the source electrode. A crystalline element electrode is on the light-transmitting region, and the day element electrode is electrically connected to the drain electrode; provide A second substrate is disposed between the corresponding first and second substrates. * Contrary to the first substrate, and infusion of liquid crystal in accordance with the present invention, the above-mentioned etching stopper is not limited, and may be indium tin oxide (1st quarter ^ Gui is a transparent material negative.) According to the present invention, the above substrate may be broken. Zinc (ΙZO). It can be indium tin oxide or indium oxide. Yu or Shi Yang, pixel electrode layer. According to the present invention, the liquid crystal above shows that the adjacent two closed electrode lines are connected to the inter-electrode line 2 = closed electrode. According to the present invention, the liquid crystal display device described above can be connected via a contact hole through an insulating layer to make a phase: the source electrode in the method can form an electrical connection; The day element can be electrically connected to the drain via a data hole in a Beco line. + The step from another contact layer through the insulation layer can be described above;: hole :: hour: hour The insulation below the transparent area is removed, that is, the transparent area is removed

0773-10405W(N1);P92051;phoe1i p.p t d 第8頁 2005235990773-10405W (N1); P92051; phoe1i p.p t d p. 8 200523599

下方絕緣層時不需增加額外的步驟 也不會增加生產的成 •為了讓本發明之上述 下文特舉出較佳實施例, 下·· 目的、特徵和優點更明顯易懂, 並配合所附圖示,作詳細說明如The lower insulating layer does not need to add additional steps or increase the production cost. In order to make the above-mentioned and preferred embodiments of the present invention more specific, the purpose, features, and advantages are more obvious and easy to understand. Icon for detailed description such as

貫施方式 實施例 作、、古ί係顯示本實施例之tft-lcd主動陣列基板製 作流权之剖面圖,箆9 p 4 列基板之上視圖。圖係為本貫施例之TFT_LCD主動陣 首先’如第2 A圖所k Μ 、 其上形成一蝕刻阻擋芦2、,、如為玻璃的一基板1,在 錫。接著在蝕刻阻擋二:二:質例如為透明的氧化銦Implementation method The embodiment of the present invention is a cross-sectional view showing the flow right of a tft-lcd active array substrate in this embodiment, and is a top view of a 9 p 4 column substrate. The picture shows the TFT_LCD active array of the present embodiment. First, as shown in FIG. 2A, an etch stopper 2 is formed thereon, and a substrate 1 such as glass is placed in tin. Then in the etching barrier two: two: the quality is for example transparent indium oxide

Si〇2。之後,在緩衝層\上:,一緩衝層3,其材質例如為 layer)。 日 y 成一多晶矽層4 (polysilicon 接著,如第2 B圖所示,夕 使多晶石夕層4具有摻有雜對/日日矽層4施予離子佈植, 未摻雜質之通道區14 :、之德之源極區16、汲極區17 ’以及 極絕緣層10與一閘極12。又序在基板1上方形成一閘 板1之上。其中閘極絕緣上後6?成-層間絕緣層18於基 為SiNx 4Si02。 日”臼間絕緣層18的材質例如 接者如苐2 C圖所示,養虫列料 上方的閘極絕緣層1 0愈芦f1碎ϋ ;'、極區1 6、汲極區1 7 、層間絕緣層U,以形成接觸洞18aSiO2. After that, on the buffer layer \, a buffer layer 3 is made, for example, layer). The polysilicon layer 4 (polysilicon, as shown in FIG. 2B) is then made to have a polycrystalline stone layer 4 doped with a doped pair of silicon layer 4 and implanted with ion implantation, an undoped channel region. 14: the source region 16, the drain region 17 'of the virtue, and the electrode insulation layer 10 and a gate electrode 12. A gate plate 1 is formed on the substrate 1 in order. -The interlayer insulating layer 18 is based on SiNx 4Si02. The material of the interlayer mortar layer 18 is, for example, as shown in Figure 2C, the gate insulating layer 10 above the insect-raising material is broken, and the gate insulation layer 10 is broken; , Pole region 16, drain region 1 7, and interlayer insulating layer U to form a contact hole 18a

200523599 五、發明說明(6) 與1 8b。同時,蝕刻位於在預定區域5的閘極 衝層3與層間絕緣層18至暴露出飯刻阻擔層2之:=止- 以減少預定區域5上方絕緣層之厚度。 ”’、 因此m=ί::明中增加一㈣阻擔層2於基板1上, 因^可错由调整接觸洞18a、18b所需的姓刻時間,同時姓 刻去除位於預定區域5之閘極絕緣層丨〇與 至,刻阻播層2之表面為止。此一步驟具有、=:刻 2 Μ # Μ的功效’從而增加製程的可容許 度(Process window),同時可減少背光在預定區域5因 極絕緣層10與層間絕緣層18影響而受到反射的機率。此 外’由於敍刻液對於多晶石夕層4的敍刻速率較低,因此在 =接觸洞18a、18b時,多晶石夕層4可扮演蝕刻阻擋層的 角色,因此不會因為增加整體蝕刻時間而影響電性。 接著’如第2D圖所示,先沉積一導體層(未繪出)在層 二、’邑冰層1 8之上,然後進行微影蝕刻步驟去除部份該導體 層而形成縱向延伸的資料線3〇〇以及源極電極2〇、汲極電 極22。之後,形成一保護層26覆蓋於源極電極“、汲極電 =22及姓刻阻稽層2之上,並於保護層⑼上形成一接觸洞 26a。此保護層的材質例如為光阻。接著,形成一 =28於保護層26上方,同時經由接觸洞26a而與汲極電極 2 2形成電性連接。 第2E圖係為本實施例TFT-LCD主動陣列基板之上視 圖如圖2 E所示’在基板1上形成有源極區1 6與汲極區 17 ;相互平行之閘極線2〇〇、2〇1與相互平行之資料線200523599 V. Description of invention (6) and 1 8b. At the same time, the gate punch layer 3 and the interlayer insulating layer 18 located in the predetermined region 5 are etched to expose the etched resist layer 2: = stop-to reduce the thickness of the insulating layer above the predetermined region 5. "', So m = ί :: Mingzhong added a barrier layer 2 on the substrate 1, because the wrong time can be adjusted by adjusting the surname engraving time required for the contact holes 18a, 18b, and the surname engraving is removed from the predetermined area 5 Gate insulation layer 丨 〇 and up to the surface of the barrier layer 2. This step has the effect of: = 2 2 ## Μ 'to increase the process tolerance (Process window), while reducing the backlight Probability that the predetermined region 5 will be reflected due to the influence of the pole insulating layer 10 and the interlayer insulating layer 18. In addition, 'the etch rate of the etch solution to the polycrystalline crystalline layer 4 is low, so when the contact holes 18a, 18b, Polycrystalline stone layer 4 can play the role of an etching barrier layer, so it will not affect the electrical properties by increasing the overall etching time. Then 'as shown in Figure 2D, a conductor layer (not shown) is first deposited on layer two, 'Eupper ice layer 18, and then a lithographic etching step is performed to remove a part of the conductor layer to form a longitudinally extending data line 300, a source electrode 20, and a drain electrode 22. Then, a protective layer 26 is formed. Covered on the source electrode ", the drain electrode = 22 and the last etch resistance layer 2, A contact hole 26a is formed on a protective layer ⑼. The material of this protective layer is, for example, a photoresist. Next, a 28 is formed above the protective layer 26, and an electrical connection is formed with the drain electrode 22 through the contact hole 26a. FIG. 2E is a top view of the TFT-LCD active array substrate of this embodiment, as shown in FIG. 2E. 'A source region 16 and a drain region 17 are formed on the substrate 1; gate lines 200 parallel to each other. , 201 and parallel data lines

200523599 五、發明說明(7) 300、301設置於上述基板1之上,其中閘極線2〇〇、2〇1與 ^料線3 0 0、3 0 1係垂直相交,其間具有一顯示區7 (即透光 區),且源極1 6係與資料線3 〇 〇形成電性連接。 #著,如一般液晶顯示器製程,進行彩色濾光片基板 40 0與TFT-LCD主動陣列基板1的對準及貼合步驟。最後, 再於貼和後的液晶顯示器内灌注液晶5 〇 〇,封口後即完成 本實施例之液晶顯示器,如第2 F圖所示。 本實施例之一種液晶顯示器結構(請參考第2 F圖),包 含一基板1,一蝕刻阻擋層2形成於基板1上;一薄膜電晶 體形成於電晶體區6之蝕刻阻擋層2上方;一保護層2 6覆蓋 於薄膜電晶體及位於顯示區7中之蝕刻阻擋層2之上;一晝 素電極2 8形成於保護層2 6之部分表面,且經由接觸洞2 6 a 與汲極電極22形成電性連接;一彩色濾光片基板4〇〇設置 於相對應基板1之上方;以及液晶層5 0 0夾於上述彩色滤光 片基板4 0 0與基板1之間。 如上述,本發明之液晶顯示器的結構及製作方法,其 利用蝕刻阻擋層控制蝕刻的深度,使得蝕刻製程較易於控 制’避免因餘刻的均勻性不佳而造成玻璃基板被I虫刻後形 成不平坦的表面。藉由將透光區的絕緣層餘刻去除而減輕 了牛頓環光強度的對比,使得牛頓環較不明顯,同時增加_ 背光的穿透率,使得LCD於穿透模式下對光的利用率提 升’進而達到高亮度的顯示效果。 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明,任何熟習此技藝者,在不脫離本發明之精神200523599 V. Description of the invention (7) 300 and 301 are arranged on the above-mentioned substrate 1, wherein the gate lines 2000, 201 and the material lines 3 0, 3 0 1 intersect perpendicularly with a display area in between. 7 (that is, the light-transmitting area), and the source electrode 16 and the data line 300 are electrically connected. The alignment and bonding steps of the color filter substrate 400 and the TFT-LCD active array substrate 1 are performed as in a general liquid crystal display manufacturing process. Finally, the liquid crystal display 500 is filled with the liquid crystal display after the paste, and the liquid crystal display of this embodiment is completed after sealing, as shown in FIG. 2F. A liquid crystal display structure of this embodiment (refer to FIG. 2F) includes a substrate 1 and an etch stop layer 2 formed on the substrate 1; a thin film transistor is formed over the etch stop layer 2 of the transistor region 6; A protective layer 2 6 covers the thin film transistor and the etch stop layer 2 located in the display area 7; a day element electrode 28 is formed on a part of the surface of the protective layer 26 and passes through the contact hole 2 6 a and the drain electrode. The electrode 22 is electrically connected; a color filter substrate 400 is disposed above the corresponding substrate 1; and a liquid crystal layer 500 is sandwiched between the color filter substrate 400 and the substrate 1. As mentioned above, the structure and manufacturing method of the liquid crystal display of the present invention use an etch stop layer to control the depth of the etch, making the etching process easier to control. 'Avoid the formation of the glass substrate after being etched due to the poor uniformity of the remaining etch. Uneven surface. By removing the insulation layer in the light-transmitting area, the contrast of the light intensity of the Newton's ring is reduced, making the Newton's ring less obvious, and increasing the transmittance of the backlight, which makes the LCD use the light in the transmission mode. Enhance 'to achieve high-brightness display. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art will not depart from the spirit of the present invention.

〇773-l〇4〇5TW(Nl);P92051;phoelip.ptd 第 11 頁 200523599〇773-1044TW (Nl); P92051; phoelip.ptd page 11 200523599

0773-10405TW( N1); P92051; phoe 1 i p. p t d 第12頁 200523599 圖式簡單說明 ’ 第1圖顯示一TFT陣列基板之部分剖面圖。 第2 A〜2D圖顯示本實施例TFT-LCD主動陣列基板製作流 程之剖面圖。 '第2E圖顯示本實施例TFT-LCD主動陣列基板之上視 圖。 第2F圖顯示本實施例液晶顯示器之剖面圖。 符號說明 1、101、40 0 〜基板;2 3〜緩衝層; 4 5〜預定區域; 7〜顯不'區,1 2、1 0 8〜閘極;1 6、1 0 2〜源極區; 1 8、11 2〜層間絕緣層 18a、18b、26a 、1 1 0 6、 10 14 17 蝕刻阻擋層; 多晶矽層; 電晶體區; 、1 0 7〜閘極絕緣層 、1 04〜通道區; 、1 0 3〜没極區; 111、1 3 0 a〜接觸洞 2 0、1 2 2〜源極電極;2 2、1 2 3〜没極電極; 2 6、1 3 0〜保護層; 2 8、1 0 5〜晝素電極; 2 0 0、2 0 1〜閘極線;3 0 0、3 0 1〜資料線; 5 0 0〜液晶。0773-10405TW (N1); P92051; phoe 1 i p. P t d Page 12 200523599 Brief description of the drawings ′ Figure 1 shows a partial cross-sectional view of a TFT array substrate. Figures 2A to 2D show cross-sectional views of the manufacturing process of the TFT-LCD active array substrate of this embodiment. 'Figure 2E shows a top view of the TFT-LCD active array substrate of this embodiment. FIG. 2F shows a cross-sectional view of the liquid crystal display of this embodiment. Explanation of symbols: 1, 101, 40 0 to the substrate; 2 3 to the buffer layer; 4 5 to the predetermined area; 7 to the display region; 1 2, 1 8 to the gate; 16 and 102 to the source region ; 18, 11 2 ~ interlayer insulation layers 18a, 18b, 26a, 1 1 06, 10 14 17 etch barrier layer; polycrystalline silicon layer; transistor region; 1 107 ~ gate insulation layer, 1 04 ~ channel region ; 1 0 3 ~ non-polar area; 111, 1 3 0 a ~ contact hole 2 0, 1 2 2 ~ source electrode; 2 2, 1 2 3 ~ non-polar electrode; 2 6, 1 3 0 ~ protective layer ; 2, 8, 105 ~ day element electrode; 2 0, 2 0 1 ~ gate line; 3 0, 3 0 1 ~ data line; 5 0 0 ~ liquid crystal.

0773-10405TWF(N1);P92051;phoe1i p.p t d 第13頁0773-10405TWF (N1); P92051; phoe1i p.p t d p.13

Claims (1)

200523599 六、申請專利範圍 1. 種液晶顯示器,具有一上基板、 基板,其中該顯示器至少包括: 阻擋層’形成於該下基板上方· -汲極區,形成於該蝕刻卩且擋層’上方· 極-汲極區上方,且在相鄰條二互二行之資料線 間定義一顯示區;以及 "甲極線與相鄰 層,至少一部分接觸於該顯 。 ”、、^、區之該钱刻阻擋 液晶層及一下 一餘刻 〆源極· 複數條 設置於該源 二該資料線 一保護 層之頂表面 2 ·如申 蝕刻阻擋層 3.如申 蝕刻阻擋層 4 ·如申 基板為玻璃 5.如申 顯示器更包 6 ·如申 包括一閘極 以驅動該源極-汲極區 請專利範圍第1項所述之液晶顯示哭 為透明材質。 請專利範圍第2項所述之液晶顯示器 為氧化銦錫(ΙΤ0)或氧化銦鋅(izq) 請專利範圍第1項所述之液晶顯示器 基板或石英基板。 請專利範圍第1項所述之液晶顯示器^ β 括有一晝素電極層,係形成於該保護層上方 請專利範圍第1項所述之液晶顯示器,其中更 ,其與該相鄰二閘極線中之一閘極線相連,用 其中該 其中該 其中該 其中該 7· —種 一基板 一 I虫刻 一電晶 液晶顯示器的電晶體陣列基板,包括·· ,該基板上定義有一電晶體區及一顯示區 阻擋層形成於該基板上方; 體設置於該電晶體區之該餘刻阻擔層上方200523599 VI. Patent application scope 1. A liquid crystal display having an upper substrate and a substrate, wherein the display includes at least: a barrier layer 'formed over the lower substrate ·-a drain region formed over the etched layer and over the barrier layer' · A display area is defined above the pole-drain region and between two adjacent two data lines; and at least a portion of the pole line and the adjacent layer are in contact with the display. ",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, and blocking the liquid crystal layer in the following part of the source, the source electrode is located on the top surface of the protective layer of the data line and the source layer Barrier layer 4 · If the substrate is made of glass 5. If the display is more packaged 6 · If the application includes a gate to drive the source-drain region, please refer to the liquid crystal display described in item 1 of the patent scope as a transparent material. The liquid crystal display described in the second item of the patent scope is indium tin oxide (ITO) or indium zinc oxide (izq). Please refer to the liquid crystal display substrate or the quartz substrate described in the first item of the patent scope. Please use the liquid crystal described in the first item of the patent scope. The display ^ β includes a day electrode layer, which is a liquid crystal display device formed above the protective layer, as described in item 1 of the patent scope. Among them, it is connected to one of the two adjacent gate lines, and The transistor array substrate of which one of the seven substrates, one substrate, one insect, and one transistor liquid crystal display includes: a transistor region and a display region barrier layer defined on the substrate; Above the substrate ; The body is disposed above the remaining resist layer in the transistor region 200523599 六、申請專利範圍 於該顯 示區之該蝕刻阻擋層 一保護層至少一部分接觸 之頂表面;以及 畫素電極形成於該保護層i, 且與該電晶體形成電 性連渙 8·如申請專利範圍第7項所诚夕、、六s 一 陣列基板,其中該蝕刻阻擒層為^j 攻日曰顯不器的電晶體 鋅(ΙΖ〇) 。 4虱化銦錫(ΙΤ0)或氧化銦 9. 如申請專利範圍第7項所述之;夜晶顯 陣列基板’其中該晝素電極層為氧化 : 鋅(ΙΖ0 )。 々礼化姻 10. —種液晶顯示器之電晶體陣列基板的製作方法, 包括: 提供一基板,其上形成有一蝕刻阻擋層; 形成一源極-汲極區於該飯刻阻擔層上方; 形成一絕緣層於該源極-汲極區上方; 設置複數條相互平行之閘極線與複數條相互平行之資 料線於該絕緣層上,,且在相鄰二閘極線與相鄰二資料線 間定義為一顯示區;以及 蝕刻去除該顯示區之該絕緣層至露出該蝕刻阻擋層之 表面為止。 一 1 1 ·如申請專利範圍第1 〇項所述之液晶顯示器的電晶 體陣列基板製作方法,其中該蝕刻阻播層為透明材質。 1 2 ·如申請專利範圍第1 1項所述之液晶顯示器的電晶 體陣列基板製作方法,其中該蝕刻阻播層為氧化鋼錫200523599 6. Apply for a patent covering the top surface of at least a portion of the etch stop layer and a protective layer in the display area; and a pixel electrode is formed on the protective layer i and forms an electrical connection with the transistor. The scope of the patent No. 7 is an array substrate of six, six, and six, wherein the etching blocking layer is a transistor zinc (IZZ). 4 Indium tin (ITO) or indium oxide 9. As described in the seventh patent application scope; night crystal display array substrate ', wherein the day electrode electrode layer is oxide: zinc (IZ0). 10. A method for manufacturing a transistor array substrate for a liquid crystal display, comprising: providing a substrate on which an etch stop layer is formed; forming a source-drain region over the rice-etched resist layer; An insulating layer is formed above the source-drain region; a plurality of gate lines parallel to each other and a plurality of data lines parallel to each other are arranged on the insulating layer, and two adjacent gate lines and adjacent two The data lines are defined as a display area; and the insulating layer of the display area is etched away until the surface of the etch stop layer is exposed. 1 1 · The method for manufacturing an electric crystal array substrate for a liquid crystal display according to item 10 of the scope of patent application, wherein the etching stopper layer is made of transparent material. 1 2 · The method for fabricating an electric crystal array substrate for a liquid crystal display according to item 11 of the scope of patent application, wherein the etching stopper layer is steel tin oxide 0773-10405TWF(Nl);P92051;phoelip.ptd 第 15 頁 2005235990773-10405TWF (Nl); P92051; phoelip.ptd page 15 200523599 六、申請專利範圍 (I T 0 )或氧化銦鋅(I z 〇 )。 1 3.如申請專利範圍第1 0項所述之液晶顯示器的電晶 體陣列基板製作方法,其中該基板為玻璃基板或石英基 板。· ' 土 1 4 ·如申請專利範圍第1 〇項所述之液晶顯示器的電晶 體陣列基板製作方法,其中更包括形成一晝素電極層於該 顯示區上方,且該晝素電極與該汲極形成電性連接。 1 5 ·如申請專利範圍第1 〇項所述之液晶顯示器的電晶 體陣列基板製作方法,更包括形成一閘極,其與該相鄰二 閘極線中之一閘極線相連,用以驅動該源極〜汲極區。 1 6 ·如申請專利範圍第1 〇項所述之液晶顯示器的電晶 體陣列基板製作方法,其中該源極係經由該絕緣層之一接 觸洞而與該相鄰二資料線中之一資料線形成電性連接;該 晝素電極係經由該絕緣層之另一接觸洞而與該汲極形成電 性連接。 1 7 ·如申請專利範圍第1 6項所述之液晶顯示器的電晶 體陣列基板製作方法,其中該等接觸洞係在蝕刻該透光區 下方之絕緣層同時形成。 1 8 · —種液晶顯示器的製作方法,包括:6. The scope of patent application (I T 0) or indium zinc oxide (I z 〇). 1 3. The method for manufacturing an electric crystal array substrate for a liquid crystal display according to item 10 of the scope of application for a patent, wherein the substrate is a glass substrate or a quartz substrate. · 'Soil 1 4 · The method for fabricating a transistor array substrate for a liquid crystal display as described in item 10 of the scope of patent application, further comprising forming a day element electrode layer above the display area, and the day element electrode and the drain electrode The electrodes form an electrical connection. 15 · The method for fabricating a transistor array substrate for a liquid crystal display as described in item 10 of the scope of patent application, further comprising forming a gate connected to one of the two gate lines adjacent to the gate line for Drive the source to drain regions. 16 · The method for fabricating a transistor array substrate for a liquid crystal display as described in Item 10 of the scope of patent application, wherein the source electrode is connected to one of the two adjacent data lines via a contact hole of the insulating layer. An electrical connection is formed; the day electrode is electrically connected to the drain electrode through another contact hole of the insulating layer. 17 · The method for manufacturing an electric crystal array substrate for a liquid crystal display as described in item 16 of the scope of patent application, wherein the contact holes are formed at the same time by etching the insulating layer below the light-transmitting area. 1 8 · —A method for manufacturing a liquid crystal display, including: 提供一第一基板,其上形成有一蝕刻阻擋層; 形成一源極- >及極區於該刻阻擔層上, 形成一絕緣層於該#刻阻擋層上; 設置複數條閘極線於該絕緣層上’並在各該閘極線間 定義有至少一顯示區;A first substrate is provided, on which an etch stop layer is formed; a source electrode is formed on the etch stop layer, an insulating layer is formed on the #etch stop layer; a plurality of gate lines are provided At least one display area is defined on the insulation layer and between the gate lines; 0773-10405W( N1); P92051; phoe 1 i p. p t d 第16頁 200523599 六、申請專利範圍 蝕刻該顯示區之該絕緣層至暴露出該蝕刻阻擋層之表 面為jil > 設置複數條資料線於該絕緣層之上;以及 彬成一畫素電極於該顯示區上,且該晝素電極與該汲 極形成電性連接; 提供一第二基板,其設置相對應於該第一基板上方; 貼合該第一基板及該第二基板;以及 灌注液晶於該兩基板之間。 1 9.如申請專利範圍第1 8項所述之液晶顯示器的製作 方法,其中該蝕刻阻擋層為氧化銦錫(I T0)或氧化銦鋅 (ΙΖ0 )。0773-10405W (N1); P92051; phoe 1 i p. Ptd page 16 200523599 VI. Patent application scope Etching the insulation layer of the display area to the surface where the etch stop layer is exposed is jil > Set multiple data lines Over the insulating layer; and forming a pixel electrode on the display area, and the day electrode forming an electrical connection with the drain electrode; providing a second substrate, which is disposed corresponding to the first substrate; Laminating the first substrate and the second substrate; and injecting liquid crystal between the two substrates. 19. The method for manufacturing a liquid crystal display according to item 18 of the scope of the patent application, wherein the etch stop layer is indium tin oxide (ITO) or indium zinc oxide (IZ0). 0773-10405TWF(N1);P92051;phoelip.ptd 第17頁0773-10405TWF (N1); P92051; phoelip.ptd Page 17
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN103984169A (en) * 2013-02-08 2014-08-13 群创光电股份有限公司 Liquid crystal display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103984169A (en) * 2013-02-08 2014-08-13 群创光电股份有限公司 Liquid crystal display device

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