200523384 玖、發明說明： 【發明所屬之技術領域】 本發明係關於一種連續濺鍍真空室系統及其 操作方法，特別是關於一種藉由閘門控制之連續 濺鍍真空室系統及其操作方法。 【先前技術】 真空室依其應用方向之不同，在形體、大小、 接合方式上有很大的差異，尤其是依照使用者特 籲 殊需求而設計之真空室腔體，更有其獨特的考 量。因此真空室可以依真空室之機械強度、真空 度要求、功能性及其擴充性來作不同的設計。真 空室依功能性之不同，可以分為基板載入室、基 板傳送室及製程室等。 基板載入室為基板等待進入製程室之前或完 成製程之後退出系統之前所處的腔體。基板在常 壓下被載入基板載入室後，基板載入室隨即將基 板分送至可使用之製程室中。習知技術之基板載 入室係利用真空幫浦將其抽至真空，基板載入室 鲁 之真空腔體一般保持在 0.1〜0.01 Torr 之真空 度。基板經由基板載入室與基板傳送室，再分送 至可使用之製程室中。基板載入室可以載入單片 基板或同時載入多片基板，載入多片基板在於增 加系統的產片率，因為基板載入室抽氣與破真空 之頻率（pump-vent cycle)可以減少。 基板載入室之真空室腔體設計主要必須考慮 到腔體之機械強度，也就是說腔壁之寬度與厚度 3 200523384 比必須能承受一大氣壓力，而不至於造成腔壁之 變形。另外，真空室腔體内部必須拋光，除了可 以避免逸氣之外，也可以減少表面缺口之殘留而 影響腔壁之機械強度。 基板傳送室負責將基板傳送至製程室内，或將 製程室内完成製程之基板傳回基板載入室。基板 傳送室之腔體必須有足夠的空間以利基板與傳 送裝置運作。習知技術之基板傳送室之腔體架構 設計為四邊扁平式，其兩面分別與製程室及基板 載出室相連接，而接合處使用金屬墊圈或橡膠墊 圈予以緊密接合。 製程室在整體製程系統是最重要的一個模 組，其腔體設計上較基板傳送室與基板載入室多 樣而複雜。以形體而言，製程室内之空間設計必 須配合基板的形狀與尺寸大小。習知技術之製程 室之内部設計為四邊扁平型，其外部設計亦為四 邊扁平型。製程室之腔體内含有加熱裝置、靶 材、電極板、基板傳送裝置等裝置，並且基板與 電極板間可調整距離參數。 【發明内容】 本發明之主要目的在於提供一種連續濺鍍真 空室系統，此連續濺鍍真空室系統可同時或不同 時提供兩個製程室進行濺鍍，並且可同時使用二 個或兩個以上具不同成份的靶材進行沉積。 為逹成此一目的，本發明之一實施例提供一種 連續濺鍍真空室系統，用以連續性對一基板進行 一第一濺鍍作業及一第二濺鍍作業，該連續濺鍍 4 200523384 真空室系統包含：一載入室，用以載入該基 以準備進行該第一濺鍍作業及該第二濺 業；一第一傳送室與該載入室連接，用以傳 基板；一第一段製程室與該第一傳送室連接 以進行該第一濺鍍作業；一第二傳送室與該 段製程室連接，用以傳送該基板；一第二段 室與該第二傳送室連接，用以進行該第二濺 業；以及一載出室與該第二段製程室連接， 載出該基板。 【實施方式】 為能讓貴審查委員能更瞭解本發明之技 容，特舉二個較佳具體實施例說明如下。 請參閱圖1關於本發明之連續濺渡真空1 統之一具體實施例。如圖1所示，本發明之 濺鍍真空室系統10具有載入室20卜第一傳 202、第一段製程室203、第二傳送室204、 段製程室205、載出室206;閘門101、102、 104、105、106；真空抽氣 f 浦 301、302、 304、305、3 06 ；以及鍍膜設備 003、005° 如圖1所示，載入室2 01係與閘門1 0 1 並藉由閘門102與第一傳送室202相連接。 室201另與真空抽氣幫浦301連接，可藉由 抽氣幫浦301將載入室201抽真空。當進行 時，欲濺鍍之基板需先經由清淨處理再經由 101進入載入室201内。當欲濺鍍之基板已 載入室201後，閘門101即關閉，接著真空 板， 鍍作 送該 ，用 第一 製程 鍍作 用以 術内 [系 連續 送室 第二 103、 3 03、 L接， 載入 真空 濺鍍 閘門 載入 抽氣 200523384 幫浦 301 將載入室 201抽至與） 203、第一傳送室202相當之壓力， 將打開並將欲濺鍍之基板送入第一 行加熱。 如圖1所示，第一傳送室202藉 載入室201連接，並藉由閘門103 室203相連接。第一傳送室202另 浦302連接，可藉由真空抽氣幫浦 送室202抽真空。當進行濺鍍時， 可先於第一傳送室202加熱至相當 用真空抽氣幫浦3 0 2將第一傳送室 持相當壓力，如此可減少製程變異 濺鍍金屬膜、陶瓷膜等等的較佳效 如圖1所示，第一段製程室203 與第一傳送室202連接，並藉由閘 傳送室204相連接。第一段製程室 抽氣幫浦303連接，可藉由真空抽 第一段製程室203抽真空。第一段 有鍍膜設備 003。當欲濺鍍之基板 進入第一段製程室203後，鍍膜設 材濺鍍於基板上。待濺鍍完成後， 打開，濺鍍後之基板將由第一段製 送至第二傳送室204。 如圖1所示，第二傳送室204藉 第一段製程室203連接，並藉由閘 段製程室205相連接。第二傳送室 抽氣幫浦304連接，可藉由真空抽 第二傳送室204抽真空。為了使第 203及第二段製程室205不需進行 事一段製程室 接著閘門102 傳送室202進 由閘門102與 與第一段製程 與真空抽氣幫 3 02將第一傳 欲濺鍍之基板 溫度，並且利 2 0 2之腔體保 參數，而達到 果。 藉由閘門103 門104與第二 203另與真空 氣幫浦303將 製程室203具 經由閘門 103 備003即將把 閥門104將會 程室2 0 3被傳 由閘門104與 門105與第二 204另與真空 氣幫浦304將 一段製程室 回壓與再抽真 200523384 空之過程，以減少製程上之變異參 間，因而提高生產率，當經由第一 濺鍍後之基板被傳送至第二傳送室 抽氣幫浦304需使第二傳送室204 空度。 如圖1所示，第二段製程室205 與第二傳送室204連接，並藉由閘 室206相連接。第二段製程室205 幫浦305連接，可藉由真空抽氣幫 段製程室205抽真空。第二段製程 膜設備0 0 5。本發明之連續濺渡真 進行連續性之濺鍍作業，當第二段 完成前一次基板之濺鍍作業後，閥 開，使得第二傳送室204預備濺鍍 入第二段製程室205，再由鍍膜設 進行濺鍍。第二製程205之鍍膜設 段製程室之鍍膜設備003實質相同 其分別位於各個製程室之兩側，1 0 0 5位於第二製程2 0 5之左側，則 位於第一製程2 0 3之右側；反之，若 位於第二製程2 0 5之右側，則鍍膜 第一製程2 0 3之左側。藉由此種配 兩側皆能接受到濺鍍作業。當第二 完成基板之濺鍍後，閥門1 06將打 送至載出室206。 如圖1所示，載出室206藉由閘 段製程室205連接，並與閘門107 室206另與真空抽氣幫浦306連接 抽氣幫浦306將載出室206抽真空 數與製程時 段製程室203 2 04時，真空 保持相當之真 藉由閘門105 門1 0 6與載出 另與真空抽氣 浦3 05將第二 室205含有鍍 空室系統可以 製程室205於 丨門 1 0 5即打 之基板可以進 備0 0 5對基板 備005與第一 ，惟不同的是 f列如鍍膜設備 鍍膜設備0 0 3 鍍膜設備0 0 5 設備0 0 3位於 置，可使基板 段製程室205 開，將基板傳 門106與第二 相連接。載出 ，可藉由真空 。在本發明之 200523384 連續濺鍍系統操作過程中，載出室2 0 6將保持相 當壓力。基板被送至載出室206後，閥門106即 關閉，待將載出室2 0 6回壓後，才將基板取出。 基板取出後，閘門1 〇 7即關閉，真空抽氣f浦3 0 6 會立即啟動，將載出室206抽至相當壓力。由於 載出室2 0 6之腔體被設計為適當大小，故抽氣時 間可以達到最佳化，以減少基板完成濺鍍後之等 待時間。 經由上述本發明之連續濺渡真空室系統之設 計，第一段製程室203、第二段製程室205及第 二傳送室2 0 4皆可以保持相當之真空度，因此可 減少抽真空及回壓所需之時間且減少變異參 數。再者，在本發明之連續濺渡真空室系統之具 體實施例中，可藉由調整第一段製程室203、第 二段製程室205及載入室201等腔體之大小，以 不同組合方式來提高生產率與得到較佳濺鍍薄 膜。 請參閱圖 2關於本發明之連續濺渡真空室系 統之操作方法之一具體實施例。圖2顯示圖1所 示連續濺鍍真空室系統之濺鍍流程圖。惟需注意 的是，圖2雖顯示本發明之濺鍍製程中的每一步 驟或決定，但在實際執行程序中至少可包括其他 一個或多個步驟。 如圖2所示，在本發明之一具體實施例中，當 進行連續濺渡時，本發明首先進行起始步驟 401，以準備及起始基板標準試片。在完成起始 步驟401後，本發明接著進行步驟402，將基板 予以清淨處理，例如拋光、去脂、研磨等。接著， 8 200523384 進行步驟403以檢驗基板表面是否有刮痕。如果 步驟4 0 3中之判斷是否定的，則繼續進行步驟 404，將基板置入載入室201中。如果步驟403 中之判斷是肯定的，則重回步驟4 0 2進行基板清 淨處理。在完成基板置入載入室步驟404後，接 著進行步驟4 0 5，關閉載入室2 0 1之閘門1 0 1， 並將載入室201抽至相當真空。接著進行步驟 406，將基板送至第一傳送室202預先加熱至適 當溫度。本發明在步驟406中將基板預先加熱至 適當溫度後，再進行之後的濺鍍步驟，可減少基 板進入第一段製程室203後再行加熱之時間。接 著，在第一段製程室203完成前一個基板之第一 次濺渡作業後，進行步驟407，將基板由第一傳 送室202載入第一段製程室203進行濺鍍。完成 步驟407後，進行步驟408，將基板傳送至第二 傳送室204，等待進行第二次濺鍍作業。當第二 段製程室205已完成前一個基板之第二次濺渡作 業後，進行步驟409，將基板由第二傳送室204 載入第二段製程室205進行第二次濺鍍作業。當 第二段製程室205完成第二次濺鍍作業後，進行 步驟410，將基板傳送至載出室206。接著本發 明即進行步驟4 1 1，對已完成鍍膜之基板進行光 譜實驗，檢驗鍍膜品質是否符合所要求的透光 性。如果步驟4 1 1中之判斷是肯定的，則繼續進 行時間及檢驗結果記錄步驟4 1 2。如果步驟4 1 1 9 200523384 中之判斷是否定的，則重回步驟404。在基材完 成步驟4 1 2之鍍膜檢驗記錄後，即可進行結束步 驟4 1 3，完成本發明之連續濺鍍真空室系統之操 作流程。 綜上所陳，本發明無論就目的、手段及功 效，在在均顯示其迥異於習知技術之特徵，懇請 貴審查委員明察，早曰賜准專利，俾嘉惠社會， 實感德便。惟應注意的是，上述之實施例僅係為 了便於說明而舉例而已，本創作所主張之權利範 圍自應以申請專利範圍所述為準，而非僅限於上 鲁 述實施例。 【圖式簡單說明】 圖1為本發明之連續濺鍍真空室系統之裝置示意 圖。 圖2為本發明之連續濺鍍真空室系統之操作步驟 流程圖。 【圖式符號說明】 春 鍍膜設備 003、005 閘門 101、 102、 103、 104、 105、 106、 107 載入室 201 第一傳送室 202 第一段製程室 203 第二傳送室 204 10 200523384 第二段製程室 205 載出室 206 真空抽氣 f 浦 301、302、303、304、305、306200523384 (ii) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a continuous sputtering vacuum chamber system and an operating method thereof, and more particularly to a continuous sputtering vacuum chamber system controlled by a gate and an operating method thereof. [Previous technology] Depending on the application direction of the vacuum chamber, there are great differences in shape, size, and joining method. Especially the vacuum chamber cavity designed according to the special needs of users has its unique considerations. . Therefore, the vacuum chamber can be designed differently according to the mechanical strength, vacuum degree requirements, functionality, and expandability of the vacuum chamber. Vacuum chambers can be divided into substrate loading chambers, substrate transfer chambers, and process chambers depending on their functionality. The substrate loading chamber is the cavity where the substrate is waiting before entering the process chamber or before exiting the system after the process is completed. After the substrate is loaded into the substrate loading chamber under normal pressure, the substrate loading chamber then distributes the substrate to a usable process chamber. The substrate loading chamber of the conventional technology is evacuated to a vacuum using a vacuum pump. The vacuum chamber of the substrate loading chamber is generally maintained at a vacuum of 0.1 to 0.01 Torr. The substrate passes through the substrate loading chamber and the substrate transfer chamber, and is then distributed to a usable process chamber. The substrate loading chamber can load a single substrate or multiple substrates at the same time. Loading multiple substrates is to increase the system production rate, because the pump-vent cycle of the substrate loading chamber can cut back. The design of the vacuum chamber cavity of the substrate loading chamber must mainly consider the mechanical strength of the cavity, that is, the ratio of the width of the cavity wall to the thickness 3 200523384 must be able to withstand an atmospheric pressure without causing deformation of the cavity wall. In addition, the interior of the vacuum chamber cavity must be polished. In addition to avoiding outgassing, it can also reduce the residue of surface notches and affect the mechanical strength of the cavity wall. The substrate transfer chamber is responsible for transferring the substrates into the process chamber, or returning the substrates that have completed the process in the process chamber to the substrate loading chamber. Substrate The cavity of the transfer room must have sufficient space to facilitate the operation of the substrate and the transfer device. The cavity structure of the substrate transfer chamber of the conventional technology is designed as a four-sided flat type, and its two sides are connected to the process chamber and the substrate carry-out chamber, respectively, and the joints are tightly joined using metal gaskets or rubber gaskets. The process chamber is the most important module in the overall process system. The cavity design is more complex and complicated than the substrate transfer chamber and substrate loading chamber. In terms of shape, the space design in the process room must match the shape and size of the substrate. The internal design of the conventional technology process room is a four-sided flat type, and the outer design is also a four-sided flat type. The chamber of the process chamber contains heating devices, targets, electrode plates, and substrate transfer devices, and the distance parameters between the substrate and the electrode plates can be adjusted. [Summary of the Invention] The main object of the present invention is to provide a continuous sputtering vacuum chamber system. The continuous sputtering vacuum chamber system can simultaneously or simultaneously provide two process chambers for sputtering, and can use two or more than two Targets with different compositions are deposited. To achieve this objective, an embodiment of the present invention provides a continuous sputtering vacuum chamber system for continuously performing a first sputtering operation and a second sputtering operation on a substrate. The continuous sputtering 4 200523384 The vacuum chamber system includes: a loading chamber for loading the substrate in preparation for the first sputtering operation and the second sputtering industry; a first transfer chamber connected to the loading chamber for transferring a substrate; A first stage processing chamber is connected to the first transfer chamber for the first sputtering operation; a second transfer chamber is connected to the stage processing chamber for transferring the substrate; a second stage chamber is connected to the second transfer chamber Connected for carrying out the second sputtering industry; and a loading chamber is connected with the second stage process chamber to carry out the substrate. [Embodiment] In order to allow your review committee to better understand the technology of the present invention, two preferred specific embodiments are described below. Please refer to FIG. 1 for a specific embodiment of the continuous sputtering vacuum system of the present invention. As shown in FIG. 1, the sputtering vacuum chamber system 10 of the present invention has a loading chamber 20, a first pass 202, a first stage process chamber 203, a second transfer chamber 204, a stage process chamber 205, and a load chamber 206; 101, 102, 104, 105, 106; vacuum pumping f pumps 301, 302, 304, 305, 3 06; and coating equipment 003, 005 ° As shown in Figure 1, the loading chamber 2 01 series and the gate 1 0 1 The gate 102 is connected to the first transfer chamber 202. The chamber 201 is also connected to a vacuum pumping pump 301, and the loading chamber 201 can be evacuated by the pumping pump 301. During the process, the substrate to be sputtered needs to be cleaned and then entered into the loading chamber 201 through 101. After the substrate to be sputtered has been loaded into the chamber 201, the gate 101 is closed, and then the vacuum plate is plated to send the plate. The first process plating is used to intraoperatively. Loading vacuum sputtering gate Loading pumping 200523384 Pump 301 Pumping chamber 201 to a pressure equal to 203, the first transfer chamber 202, will open and send the substrate to be sputtered into the first row for heating . As shown in FIG. 1, the first transfer chamber 202 is connected by a loading chamber 201, and is connected by a gate 103 and a chamber 203. The first transfer chamber 202 is connected to another pump 302, and the pumping chamber 202 can be evacuated by vacuum pumping. When sputtering is performed, the first transfer chamber 202 can be heated to a considerable pressure by using vacuum pumping pump 3 2 to hold the first transfer chamber at a considerable pressure. This can reduce process variations such as sputtering metal films, ceramic films, etc. As shown in FIG. 1, the first stage process chamber 203 is connected to the first transfer chamber 202 and is connected to the gate transfer chamber 204. The first stage process chamber is connected to the pump 303, and the first stage process chamber 203 can be evacuated by vacuum. The first section has coating equipment 003. After the substrate to be sputtered enters the first-stage process chamber 203, the coating material is sputtered on the substrate. After the sputtering is completed, the substrate is opened and the sputtered substrate is transferred from the first stage to the second transfer chamber 204. As shown in FIG. 1, the second transfer room 204 is connected by the first-stage process room 203 and is connected by the gate-stage process room 205. The second transfer chamber is connected to the pump 304, and the second transfer chamber 204 can be evacuated by vacuum. In order to make the 203 and second process chambers 205 unnecessary, the first process chamber is followed by the gate 102 and the transfer chamber 202 is entered by the gate 102 and the first stage process and vacuum pumping. 3 02 The first substrate to be sputtered is sputtered. The temperature and the parameters of the cavity are guaranteed to achieve the results. The gate 103, the gate 104, the second 203, and the vacuum gas pump 303 will pass the process chamber 203 through the gate 103, 003, 003, the valve 104, and the chamber 2 0 3 will be transmitted by the gate 104 and the gate 105 and the second 204 In addition, the process of back pressure and re-pumping of a process chamber with vacuum gas pump 304 200523384 to reduce the variation parameters in the process, thereby improving productivity, when the substrate after the first sputtering is transferred to the second transfer The chamber pumping pump 304 needs to make the second transfer chamber 204 vacant. As shown in FIG. 1, the second-stage process chamber 205 is connected to the second transfer chamber 204 and is connected to the gate chamber 206. The second stage process chamber 205 is connected to pump 305, and the vacuum can be evacuated by vacuum evacuation. The second stage process membrane equipment 0 0 5. The continuous sputtering process of the present invention performs a continuous sputtering operation. When the second stage finishes the previous substrate sputtering operation, the valve is opened, so that the second transfer chamber 204 is ready to be sputtered into the second stage process chamber 205, and then Sputtering was performed using a coating device. The coating equipment 003 of the coating process chamber in the second process 205 is substantially the same. It is located on both sides of each process chamber. 1 0 5 is located on the left side of the second process 2 0 5 and is located on the right side of the first process 2 0 3. On the contrary, if it is on the right side of the second process 205, the left side of the first process 203 is coated. With this configuration, both sides can receive sputtering. When the substrate is sputtered a second time, the valve 106 is sent to the load-out chamber 206. As shown in FIG. 1, the load-out chamber 206 is connected to the gate process chamber 205, and is connected to the gate 107, the room 206, and the vacuum pump 306. The pump-pump 306 evacuates the load chamber 206 and the processing period In the process chamber 203 2 04, the vacuum is maintained by the gate 105 door 1 0 6 and the load and the vacuum pump 3 05. The second chamber 205 contains a plating chamber system, and the process chamber 205 can be processed at the door 1 0 5 substrates that can be printed can be prepared 0 0 5 substrates are prepared 005 and the first, but the difference is the f column such as coating equipment coating equipment 0 0 3 coating equipment 0 0 5 equipment 0 0 3 is located, which can make the substrate section process The chamber 205 is opened to connect the substrate gate 106 to the second phase. Load out by vacuum. During the operation of the 200523384 continuous sputtering system of the present invention, the carry-out chamber 206 will maintain a relative pressure. After the substrate is sent to the load-out chamber 206, the valve 106 is closed, and the substrate is not taken out until the load-out chamber 206 is pressed back. After the substrate is taken out, the gate 107 is closed, and the vacuum pump f 306 will start immediately, and the load-out chamber 206 will be evacuated to a considerable pressure. Because the cavity of the load-out chamber 206 is designed to be an appropriate size, the evacuation time can be optimized to reduce the waiting time after the substrate finishes sputtering. Through the design of the continuous sputtering vacuum chamber system of the present invention described above, the first stage process chamber 203, the second stage process chamber 205, and the second transfer chamber 204 can all maintain a comparable vacuum degree, so the vacuum extraction and return can be reduced. Reduce the time required and reduce the variation parameters. Furthermore, in the specific embodiment of the continuous sputtering vacuum chamber system of the present invention, the chambers such as the first stage process chamber 203, the second stage process chamber 205, and the loading chamber 201 can be adjusted in different combinations. Ways to improve productivity and get better sputtered films. Please refer to FIG. 2 for a specific embodiment of an operating method of the continuous sputtering vacuum chamber system of the present invention. FIG. 2 shows a sputtering flow chart of the continuous sputtering vacuum chamber system shown in FIG. 1. FIG. It should be noted that although Figure 2 shows each step or decision in the sputtering process of the present invention, at least one or more other steps may be included in the actual execution procedure. As shown in FIG. 2, in a specific embodiment of the present invention, when continuous sputtering is performed, the present invention first performs an initial step 401 to prepare and start a standard test piece for a substrate. After the initial step 401 is completed, the present invention proceeds to step 402 to clean the substrate, such as polishing, degreasing, grinding, and the like. Next, 8 200523384 proceeds to step 403 to check whether there is a scratch on the substrate surface. If the determination in step 403 is negative, then proceed to step 404 to place the substrate in the loading chamber 201. If the judgment in step 403 is affirmative, return to step 402 to perform substrate cleaning processing. After the step 404 of placing the substrate into the loading chamber is completed, step 405 is followed, the shutter 101 of the loading chamber 201 is closed, and the loading chamber 201 is evacuated to a considerable vacuum. Then, step 406 is performed, and the substrate is sent to the first transfer chamber 202 to be heated to an appropriate temperature in advance. In the present invention, in step 406, the substrate is heated to an appropriate temperature in advance, and then the subsequent sputtering step is performed, which can reduce the time for the substrate to be heated after entering the first-stage process chamber 203. Next, after the first stage of the first process chamber 203 completes the first sputtering operation of the previous substrate, step 407 is performed to load the substrate from the first transfer chamber 202 into the first stage of the process chamber 203 for sputtering. After step 407 is completed, step 408 is performed to transfer the substrate to the second transfer chamber 204 and wait for the second sputtering operation. After the second stage process chamber 205 has completed the second sputtering operation of the previous substrate, step 409 is performed to load the substrate from the second transfer chamber 204 into the second stage process chamber 205 for the second sputtering operation. After the second-stage sputtering chamber 205 completes the second sputtering operation, step 410 is performed to transfer the substrate to the load-out chamber 206. Then, the present invention proceeds to step 4 1 to perform a spectrum experiment on the substrate having been coated, and check whether the quality of the coated film meets the required light transmittance. If the judgment in step 4 1 1 is affirmative, continue to record the time and test results in step 4 1 2. If the judgment in step 4 1 1 9 200523384 is negative, go back to step 404. After the substrate has completed the coating inspection record of step 4 1 2, the end step 4 1 3 can be performed to complete the operation flow of the continuous sputtering vacuum chamber system of the present invention. To sum up, the present invention, regardless of its purpose, means and effect, shows its characteristics that are quite different from those of the conventional technology. I implore your reviewing committee to make a clear observation and grant a quasi-patent as early as possible to benefit the society. It should be noted that the above-mentioned embodiments are just examples for the convenience of explanation. The scope of the rights claimed in this creation shall be based on the scope of the patent application, and not limited to the above-mentioned embodiments. [Brief description of the drawings] Fig. 1 is a schematic diagram of a device for a continuous sputtering vacuum chamber system of the present invention. Fig. 2 is a flowchart showing the operation steps of the continuous sputtering vacuum chamber system of the present invention. [Symbol description] Spring coating equipment 003, 005 Gate 101, 102, 103, 104, 105, 106, 107 Loading room 201 First transfer room 202 First stage processing room 203 Second transfer room 204 10 200523384 Second Section process chamber 205 Load-out chamber 206 Vacuum extraction f Pumps 301, 302, 303, 304, 305, 306
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