TW200522514A - Filter device of balanced structure thin-film bulk acoustic resonators (FBAR) and duplexer using this device - Google Patents
Filter device of balanced structure thin-film bulk acoustic resonators (FBAR) and duplexer using this device Download PDFInfo
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200522514 五、發明說明（1) 【發明所屬之技術領域】 Θ本發明係關於一種無線通信裝置中之濾波裝置，特別 是一種平衡式架構之薄膜體聲波共振子濾波裝置。 【先前技術】 目Α ί慮波器（f i 1 t e r )在無線通信中被廣泛使用，預估 每年t需上百億個。主要可分為LC濾波器、介電濾波器、 表面聲波濾波器及薄膜體聲波濾波器等數種，而薄膜體聲 波濾波恭因具有體積小、易達高頻、及低插入損失等特 性’且具有與I c整合之能力，故最被看好。 目#以薄膜體聲波共振子來製作濾波器，按其電路架 構來區分有平衡式（Balanced type)與非平衡式 (unbalanced type)兩種濾波器，平衡式架構如『第1圖』 所不’係由第一薄膜體聲波共振子A與第二薄膜體聲波丘』 成：型（，tice Type)架構’非平衡式架構： 弟2圖』所不，係由第一薄膜體聲波共振子 體聲波共振子B組成階梯式（Ladder type)架構?二 要差異為『第1圖』中的電路架構為上下左右均呈對矜、， 且無須透過外加的非平衡轉平衡架構的轉換電路，如為 balun等元件，來與其他平衡式架構元件連接，以ϋ 抗匹配與訊號轉換。非平衡式架構的濾波器最大 P心 要額外的轉換電路，且由於接地的原因，容易受外^而 訊的干擾。 』卜在雜 >例如，^國第6 2 7 8 3 4 2號提出一種平衡式的電路架 來没汁濾波為，其透過面積的控制，來調整帶通渡波、器的200522514 V. Description of the invention (1) [Technical field to which the invention belongs] Θ The present invention relates to a filtering device in a wireless communication device, especially a thin film bulk acoustic wave filter device with a balanced structure. [Prior technology] A wave filter (f i 1 t e r) is widely used in wireless communications, and it is estimated that tens of billions are required each year. It can be divided into LC filters, dielectric filters, surface acoustic wave filters, and thin-film bulk acoustic wave filters. Thin-film bulk acoustic wave filters have the characteristics of small size, high frequency, and low insertion loss. And has the ability to integrate with I c, so it is most promising.目 # Using a thin-film bulk acoustic wave resonator to make a filter, according to its circuit structure, there are two types of balanced (Balanced type) and unbalanced (unbalanced type) filters. The balanced structure is as shown in [Figure 1]. 'It is composed of the first thin-film bulk acoustic wave resonator A and the second thin-film bulk acoustic wave mound.' Formed into a (type) structure. 'Non-balanced architecture: Di 2 Figure'. The bulk acoustic wave resonator B constitutes a ladder-type structure. The second difference is that the circuit structure in "Figure 1" is a conversion circuit that faces up and down, and does not need to pass through an additional unbalanced-to-balanced architecture conversion circuit. For components such as balun, it can be connected with other balanced architecture components to resist matching and signal conversion. The filter of unbalanced architecture requires the largest P core to require additional conversion circuits, and is easily susceptible to external interference due to grounding. 『Bu Zaixi > For example, No. 6 2 7 8 3 4 2 proposes a balanced circuit frame. The filter is designed to adjust the band-passing wave and the device's frequency through the control of the area.
第6頁 200522514 五、發明說明（2) —-- 頻 共 之 若 其 寬轉降（r ο 1 1 - 〇 f f)，然而其架構仍φ ^ 振子個數與不同厚度，除了造成整個；：多薄膜體聲波 外，對於製造上的複雜度及製程的稃;：，器的面積過大 針對雙工器中的濾波器規格而t ^度是：：大考驗。 所要求傳送信號與接收信號之間的盤，同系、、'克而求 band)通常小於載波頻率的2%頻寬，且5傳頻帶（gUard 號的頻寬通常為載波頻率的測寬，這傳也^b號與/收信 相互干掙，pil @ _為了萑保傳迗信號與接收信號不會 卞k，則兩個帶通濾波器彼 會反鑛至=端傳送端送出的信號不 接收渡波器輸入端的輪入 ：=將信號送出’要讓 目前薄膜體聲波共振 =阻抗。 需的薄膜體聲波共振子個式遽波器或雙工器中，所 與非平衡式濾波器或雙工哭^夕使得面積縮小不易外，且 表波共振子厚度，因而、& 、樣都需要多種不同的薄膜體 度。另外，利用薄膜體=，程上的複雜性與不穩定 端濾波器與接收端濾 ^ 振子來設計雙工器中的傳送 波器的輸入端與天線：：$當傳送端濾波器及接收端濾 隔主要是根據信號本 〗，傳送信號與接收信號的區 端送出的信號能夠直接、关頻率來決定，因此要確保從傳送 至接收端，而將接 ^至天、、泉，且要避免由此信號 ^而的低雜訊放大器（LNA)貫穿而損，貝Page 6, 200522514 V. Description of the invention (2) --- If the frequency is wide, it will decrease (r ο 1 1-0ff), but its structure is still φ ^ number of oscillators and different thickness, except for the whole ;: In addition to multi-thin film bulk acoustic waves, the complexity of the manufacturing process and the manufacturing process are unreasonable: the area of the device is too large for the filter specifications in the duplexer, and the t ^ degree is: a big test. The disk between the required transmission signal and the received signal, the same line, and the gram is usually less than 2% of the carrier frequency, and the 5 transmission band (the bandwidth of the gUard number is usually the width of the carrier frequency. Chuanye ^ b and / receive each other, pil @ _ In order to ensure that the transmission signal and the received signal will not be 卞 k, then the two bandpass filters will demineralize to the signal sent by the transmitting end. Receiving input at the input of the wave filter: = Send the signal 'To make the current film bulk acoustic resonance = impedance. The required film bulk acoustic resonators in a single-wave resonator or duplexer, the unbalanced filter or double It makes it difficult to reduce the area and the thickness of the surface wave resonators. Therefore, a variety of different film body sizes are required for the sample. In addition, the use of the film body =, the complexity of the process and the unstable end filter Design the input and antenna of the transmitter in the duplexer with the filter ^ and the receiver :: When the filter at the transmitter and the receiver are mainly based on the signal book, the end of the transmitting and receiving signals is sent out. Signal can be determined directly and off-frequency Therefore, it is necessary to ensure that the signal is transmitted from the receiver to the receiver, and the receiver is connected to the antenna, the receiver, and the low-noise amplifier (LNA) caused by the signal.
200522514 五、發明說明（3) 害。 一般為了解決此問題，是在接收端濾波器與天線之間 加一段四分之一波長傳輸線作為相位偏移形成高阻抗以反 射傳送端的信號。此種方式最大的缺點在於此傳輸線會增 加整個雙工器的面積，而且會產生不必要的寄生效應。 【發明内容】 鑒於以上的問題，本發明的主要目的在於提供一種平 衡式架構之薄膜體聲波共振子濾波裝置，藉以解決習知技 術之濾·波裝置所存在的問題及缺點。 本發明的另一目的在於提供一種使用平衡式架構之薄 膜體聲波共振子濾波裝置之雙工器，藉以解決習知技術之 雙工器所存在的問題及缺點。 因此，根據本發明的主要目的，本發明所揭露之平衡 式架構之薄膜體聲波共振子濾波裝置，包括有一具有一第 一端、一第二端、一第三端與一第四端，該裝置包括有： 一第一薄膜體聲波共振子，耦接於第一端與第二端之間； 一第二薄膜體聲波共振子，耦接於第三端與第四端之間， 其中第一、第二薄膜體聲波共振子之厚度相同，且薄膜體 聲波共振子具有一個以上之相同共振頻率；一第一電抗元 件，耦接於第一端與第四端之間，以調整斥帶的衰減量； 以及一第二電抗元件，耦接於第二端與第三端之間，以調 整斥帶的衰減量。 根據本發明之主要目的，本發明所揭露之平衡式架構 之薄膜體聲波共振子濾波裝置，具有一第一端、一第二200522514 V. Description of Invention (3) Harm. In general, to solve this problem, a quarter-wavelength transmission line is added between the filter at the receiving end and the antenna as a phase shift to form a high impedance to reflect the signal at the transmitting end. The biggest disadvantage of this method is that this transmission line will increase the area of the entire duplexer and will produce unnecessary parasitic effects. [Summary of the Invention] In view of the above problems, the main object of the present invention is to provide a thin film bulk acoustic wave filter device with a balanced structure, so as to solve the problems and shortcomings of conventional filtering and wave devices. Another object of the present invention is to provide a duplexer using a thin film bulk acoustic wave filter device with a balanced structure, so as to solve the problems and disadvantages of the conventional duplexer. Therefore, according to the main purpose of the present invention, the thin film bulk acoustic wave filter device of the balanced structure disclosed in the present invention includes a first end, a second end, a third end, and a fourth end. The device includes: a first thin-film bulk acoustic wave resonator coupled between the first end and the second end; a second thin-film bulk acoustic wave resonator coupled between the third end and the fourth end, wherein the first 1. The thickness of the second thin-film bulk acoustic wave resonator is the same, and the thin-film bulk acoustic wave resonator has more than one of the same resonance frequency; a first reactance element is coupled between the first end and the fourth end to adjust the repulsion band And a second reactance element coupled between the second end and the third end to adjust the attenuation of the repulsion band. According to the main purpose of the present invention, the thin film bulk acoustic wave filter device of the balanced structure disclosed in the present invention has a first end and a second end.
200522514 五、發明說明（4) 端 第 三端與一第四端，該裝置包括有：一第一薄膜體 子，耦接於第一端與第四端之間；一第二薄膜體 子，耦接於第二端與第三端之間，其中第一、第 薄膜體聲波共振子之厚度相同，且薄膜體聲波共振子具 有一個以上之相同共振頻率；一第一電抗元件，耦接於第 二端之間，以調整斥帶的衰減量；以及一第二電 耦接於第三端與第四端之間，以調整斥帶的衰減 聲波共振 聲波共振 端與第 抗元件， 量。 根據 架構之薄 埠、一第 接於第一 膜體聲波 耦接於第 薄膜體聲 構之薄膜 波共振子 構之薄膜 的中之濾 根據 波裝置及 即共振頻 組成的平 穩定度， 本發明的另一目的， 膜體聲波共振子濾波 二埠以及一第三埠， 埠與第二埠之間，係 共振子串聯組成濾波 一埠與第三璋之間， 波共振子_聯組成濾、 體聲波共振子濾波裝 具有一個以上之相同 體聲波共振子濾波裝 波裝置。 本發明 本發明 裝置之 包括有 所揭露之使用平衡式 雙工器，具有一第一 傳送濾 由一個以上平衡式 裝置；以及一接收 係由一 波裝置 置之厚 共振頻 置係為 個以上平衡 ;其中該等 度相同，且 率。該等等 根據本發明 波器，岸禹 架構之薄 滤波器5 式架構之 平衡式架 薄膜體聲 平衡式架 之主要目 所揭露平衡式架構之薄膜體聲波共振子濾 使用該裝置之雙工器，本發明利用單一厚度（亦 率都一樣）的薄膜體聲波共振子搭配電感或電容 衡式電路架構，一方面降低製程上的複雜性與不 另一方面則減少濾波器所需的薄膜體聲波共振子200522514 V. Description of the invention (4) The third end and a fourth end, the device includes: a first thin film body, coupled between the first end and the fourth end; a second thin film body, Coupled between the second end and the third end, where the first and second thin-film bulk acoustic wave resonators have the same thickness, and the thin-film bulk acoustic wave resonator has more than one of the same resonance frequency; a first reactance element is coupled to Between the second end to adjust the attenuation of the repulsion band; and a second electrical coupling between the third end and the fourth end to adjust the attenuation of the reverberation band and the resonance end of the acoustic wave and the first impedance element. According to the thin port of the structure, the filtering stability of a thin film wave resonator coupled to the first thin film bulk acoustic structure and the thin film wave resonator structure of the third thin film bulk acoustic structure is based on the flatness stability of the wave device and the resonance frequency. Another purpose of the membrane bulk acoustic wave filter is between the second port and a third port. Between the port and the second port, the resonator is connected in series to form a filter between the first port and the third port. The bulk acoustic wave filter device has more than one identical bulk acoustic wave filter device. The device of the present invention includes the disclosed use of a balanced duplexer, which has a first transmission filter by more than one balanced device; and a receiving system that is set by a wave device with a thick resonance frequency set to more than one balance Where the same degree and rate. According to the wave filter according to the present invention, the thin film of the shore-Yu structure of the 5-type structure of the balanced frame of the thin-film bulk acoustic balanced frame reveals the balanced structure of the thin-film bulk acoustic wave resonator filter using the duplex of the device. The invention uses a single-thickness (also the same rate) thin-film bulk acoustic resonator with an inductor or a capacitive circuit structure, which reduces the complexity of the process on the one hand and the thin-film body required for the filter on the other. Sonic resonator
第9頁 200522514 五、發明說明（5) 個數來達到縮小面積的需求。另外透過外加電感或電容與 薄膜體聲波共振子不同串並聯的架構，使得雙工器中的兩 個帶通濾波器其通帶頻寬符合規格、斥帶頻帶的衰減量達 一定值，且控制從天線端往接收端濾波器看進去的輸入阻 抗’確保其維持南阻抗。Page 9 200522514 V. Description of the invention (5) The number is required to reduce the area. In addition, through the structure of different series and parallel connection of the film bulk acoustic wave resonator with an additional inductor or capacitor, the two band-pass filters in the duplexer have a passband bandwidth that meets the specifications, and the attenuation of the repulsion band frequency reaches a certain value. The input impedance seen from the antenna to the filter at the receiver ensures that it maintains the south impedance.
根據本發明所揭露平衡式架構之薄膜體聲波共振子濾 波裝置及使用該裝置之雙工器，使得自傳送端送出的信號 直接透過天線傳送出去而不會傳入接收端，免除多加一傳 輸線的需要，因而減小雙工器的面積與避免不必要的寄生 效應。同時在輸出端亦免去了外加的轉換電路或元件，與 雜訊干擾的問題。 有關本發明的特徵與實作，茲配合圖示作最佳實施例 詳細說明如下。 【實施方式】 首先，請參考『第3圖』，為本發明所揭露之薄膜體 聲波共振子濾波裝置之電路拓樸之第一實施例，係以單一 厚度（亦即共振頻率都相同）之薄膜體聲波共振子搭配電抗 元件（電容或電感）交叉連接構成平衡式架構濾波器的拓 樸。The thin-film bulk acoustic wave filter device of the balanced structure and the duplexer using the device according to the present invention allow signals sent from the transmitting end to be transmitted directly through the antenna without being transmitted to the receiving end, eliminating the need for an additional transmission line. Is needed, thus reducing the area of the duplexer and avoiding unnecessary parasitic effects. At the same time, the external converter circuit or components are eliminated, and the problem of interference with noise is eliminated. Regarding the features and implementation of the present invention, the preferred embodiment will be described in detail with reference to the drawings. [Embodiment] First, please refer to "Figure 3", which is the first embodiment of the circuit topology of the thin-film bulk acoustic wave filter device disclosed in the present invention, which has a single thickness (that is, the resonance frequency is the same). Thin-film bulk acoustic resonators and reactive components (capacitors or inductors) are cross-connected to form the topology of a balanced architecture filter.
如『第3圖』所示，包括有一第一薄膜體聲波共振子A 耦接於第一端1與第二端2之間，第二薄膜體聲波共振子B 耦接於第3端與第4端之間，第一電抗元件Cp 1耦接於第一 端1與第四端4，第二電抗元件Cp2麵接於第二端2與第3端3 之間。在此實施例中，第一電抗元件係為第一電容，第二As shown in "Figure 3", it includes a first thin-film bulk acoustic wave resonator A coupled between the first end 1 and the second end 2, and a second thin-film bulk acoustic wave resonator B coupled between the third end and the third end. Between the four terminals, the first reactance element Cp1 is coupled between the first terminal 1 and the fourth terminal 4, and the second reactance element Cp2 is connected between the second terminal 2 and the third terminal 3. In this embodiment, the first reactance element is a first capacitor, and the second
第10頁 200522514 五、發明說明（6) 電抗元件係為第二電容。 關於本發明的第二實施例請參考『第4圖』，係以電 感作為電抗元件。如『第4圖』所示，包括有一第一薄膜 體聲波共振子A耦接於第一端1與第二端2之間，第二薄膜 體聲波共振子B耦接於第三端3與第四端4之間，第一電抗 元件Lpl耦接於第一端1與第四端4之間，第二電抗元件Lp2 耦接於第二端2與第3端3之間。在此實施例中，第一電抗 元件Lpl係為第一電感，第二電抗元件Lp2係為第二電感。 關於本發明的第三實施例請參考『第5圖』，如圖所示， 包括有一第一薄膜體聲波共振子A|馬接於第一端1與第四端 4之間，第二薄膜體聲波共振子B搞接於第二端2與第三端3 之間，第一電抗元件Csl耦接於第一端1與第二端2，第二 電抗元件C s 2耦接於第三端3與第四端4之間。在此實施例 中，第一電抗元件C s 1係為第一電容，第二電抗元件C s 2係 為第二電容。 關於本發明的第四實施例請參考『第6圖』，係將第 三實施例中的電容以電感取代，如圖所示，第一薄膜體聲 波共振子A耦接於第一端1與第四端4之間，第二薄膜體聲 波共振子B麵接於第二端2與第三端3之間，第一電抗元件 Lsl耦接於第一端1與第二端2，第二電抗元件Ls 2耦接於第 三端3與第四端4之間。在此實施例中，第一電抗元件L s 1 係為第一電感，第二電抗元件L s 2係為第二電感。 在上述第一至第四實施例中之濾波裝置，第一薄膜體 聲波共振子A與第二薄膜體聲波共振子B與第一電抗元件與Page 10 200522514 V. Description of the invention (6) The reactance element is the second capacitor. Regarding the second embodiment of the present invention, please refer to "Fig. 4", which uses an inductor as a reactance element. As shown in "Figure 4", it includes a first thin film bulk acoustic wave resonator A coupled between the first end 1 and the second end 2, and a second thin film bulk acoustic wave resonator B coupled between the third end 3 and Between the fourth terminal 4, the first reactance element Lpl is coupled between the first terminal 1 and the fourth terminal 4, and the second reactance element Lp2 is coupled between the second terminal 2 and the third terminal 3. In this embodiment, the first reactance element Lpl is a first inductance, and the second reactance element Lp2 is a second inductance. Please refer to "Figure 5" for the third embodiment of the present invention. As shown in the figure, it includes a first thin film bulk acoustic resonator A | horse connected between the first end 1 and the fourth end 4, and the second thin film. The bulk acoustic wave resonator B is connected between the second end 2 and the third end 3, the first reactance element Csl is coupled to the first end 1 and the second end 2, and the second reactance element C s 2 is coupled to the third Between end 3 and fourth end 4. In this embodiment, the first reactance element C s 1 is a first capacitor, and the second reactance element C s 2 is a second capacitor. Please refer to "Figure 6" for the fourth embodiment of the present invention. The capacitor in the third embodiment is replaced by an inductor. As shown in the figure, the first thin-film bulk acoustic wave resonator A is coupled to the first terminal 1 and Between the fourth end 4, the second thin-film bulk acoustic resonator B is connected between the second end 2 and the third end 3, and the first reactance element Lsl is coupled between the first end 1 and the second end 2, and the second The reactance element Ls 2 is coupled between the third terminal 3 and the fourth terminal 4. In this embodiment, the first reactance element L s 1 is a first inductance, and the second reactance element L s 2 is a second inductance. In the filtering device in the above first to fourth embodiments, the first thin film bulk acoustic wave resonator A and the second thin film bulk acoustic wave resonator B and the first reactance element and
第11頁 200522514 五、發明說明（7) 第二電抗元件組成平衡式架構，其中所有的薄膜體聲波共 振子的共振頻率都一樣（單一厚度），並且薄膜體聲波共 振子至少具有一種或兩種以上的共振頻率。而電抗元件係 用來調整斥帶的衰減量。 由於薄膜體聲波共振子本身的特性，使得濾波器的頻 率響應在通帶的高頻侧或低頻侧會有很深的彎曲點 (notch)，也造成很陡峭的頻寬轉降（roll-off)。透過 第一至第四實施例中的電抗元件（電感或電容），可以控 制這些彎曲點的位置，如『第7圖』與『第8圖』所示，彎 曲點的位置隨著不同的電容而改變。 關於本發明所揭露的第五實施例，其電路架構圖請參 考『第9圖』，係將第一實施例中的薄膜體聲波共振子分 . 別並聯一第三電感Lp3以及第四電感Lp4，或如『第1 0圖』 所示之第六實施例，將第一實施例中的薄膜體聲波共振子 分別串聯一第三電感L s 3以及第四電感L s 4。 第五與第六實施例的結構係利用外加的調整元件（如 電感或電容）與薄膜體聲波共振子串聯或並聯以使得濾波 器的頻寬更能符合所要求的規格。這是因為受限於薄膜體 聲波共振子本身的△ f (並聯共振頻率f a與串聯共振頻率f r的 差，由材料決定）限制，整個濾波器的頻寬可能不合要 求，因此第五與第六實施例的結構可克服上述的問題而增 加其等效△ f。 經由串聯或並聯外加電感於薄膜體聲波共振子的方式 (如『第8圖』），可以增加其等效△ f。而當薄膜體聲波共振Page 11 200522514 V. Description of the invention (7) The second reactance element constitutes a balanced architecture, in which all the thin-film bulk acoustic wave resonators have the same resonance frequency (single thickness), and the thin-film bulk acoustic wave resonator has at least one or two Above the resonance frequency. The reactance element is used to adjust the attenuation of the repulsion band. Due to the characteristics of the thin-film bulk acoustic wave resonator, the frequency response of the filter will have a deep notch at the high-frequency side or the low-frequency side of the passband, and it will also cause a very steep roll-off. ). Through the reactance elements (inductance or capacitance) in the first to fourth embodiments, the positions of these bending points can be controlled. As shown in "Figure 7" and "Figure 8", the positions of the bending points vary with different capacitances. And change. Regarding the fifth embodiment disclosed in the present invention, please refer to "Fig. 9" for the circuit architecture diagram, which is to divide the thin film bulk acoustic resonator in the first embodiment. Do not connect a third inductor Lp3 and a fourth inductor Lp4 in parallel Or, as in the sixth embodiment shown in FIG. 10, the thin film bulk acoustic resonator in the first embodiment is connected in series with a third inductor L s 3 and a fourth inductor L s 4 respectively. The structures of the fifth and sixth embodiments are that an external adjustment element (such as an inductor or a capacitor) is used in series or in parallel with the thin film bulk acoustic resonator to make the bandwidth of the filter better meet the required specifications. This is because it is limited by the △ f (the difference between the parallel resonance frequency fa and the series resonance frequency fr, determined by the material) of the thin-film bulk acoustic wave resonator itself. The bandwidth of the entire filter may be unsatisfactory, so the fifth and sixth The structure of the embodiment can overcome the above problems and increase its equivalent Δf. By adding a series or parallel external inductor to the thin-film bulk acoustic resonator (such as "Figure 8"), the equivalent △ f can be increased. When the film bulk acoustic resonance
第12頁 200522514 五、發明說明（8) 子與電容亊聯或並聯，則會減少等效△ f，也因此會縮小濾 波器通帶的頻寬。 第七實施例為透過此並聯電感的方式所設計之濾波器 架構，請參考『第11圖』，為一種帶通濾波器，其頻率響 應圖請參考『第1 2圖』。 應用上述所揭露的實施例，可製作雙工器，包括有一 接收濾波器與傳送濾波器。在設計雙工器中的接收濾波器 Rx尚須注意到由傳送端所送出的信號是否會反潰回接收 端，而將低雜訊放大器給貫穿。要確保接收濾波器從傳送 端看進去的阻抗於傳送濾波器的通帶頻帶内為高阻抗。至 於在設計傳送濾波器時，只需考慮頻寬與衰減量的問題。 根據以上的觀察，將兩個帶通濾波器連接成薄膜體聲波共 振子雙工器，如『第1 3圖』所示，係由一接收濾波器Rx與 傳送濾波器Tx組成，在此實施例中，接收濾波器Rx與傳送 濾波器Tx均由兩個本發明所揭露之第一實施例之薄膜體聲 波共振子濾波器組成，其中，傳送濾波器係耦接於第一埠 1 〇與第二埠2 0之間，接收濾波器係耦接於第一埠1 0與第三 埠3 0之間。 另一雙工器實施例請參考『第1 4圖』，其中傳送端濾 波器係由兩個第七實施例之薄膜體聲波共振子濾波器組 成。其插入損耗與反射損耗便有如『第1 5圖』所示的特 性。 本發明利用電感或電容與薄膜體聲波共振子組成平衡 式的濾波器及雙工器電路架構，不但僅使用單一厚度的薄Page 12 200522514 V. Description of the invention (8) If the capacitor is connected or connected in parallel with the capacitor, the equivalent △ f will be reduced, and thus the bandwidth of the filter passband will be reduced. The seventh embodiment is a filter structure designed by this parallel inductor. Please refer to "Figure 11" for a band-pass filter. For the frequency response diagram, please refer to "Figure 12". By applying the above-disclosed embodiment, a duplexer can be fabricated, including a receiving filter and a transmitting filter. When designing the receiving filter Rx in the duplexer, it is necessary to pay attention to whether the signal sent by the transmitting end will reverse back to the receiving end, and pass the low noise amplifier through. Make sure that the impedance seen by the receiving filter from the transmitting end is high impedance in the passband band of the transmitting filter. As for the design of the transmission filter, only the issues of bandwidth and attenuation need to be considered. Based on the above observations, the two band-pass filters are connected to form a thin-film bulk acoustic wave duplexer. As shown in "Figure 13", it consists of a receiving filter Rx and a transmitting filter Tx. In the example, the receiving filter Rx and the transmitting filter Tx are each composed of two thin film bulk acoustic wave resonator filters according to the first embodiment disclosed in the present invention, wherein the transmitting filter is coupled to the first port 10 and Between the second port 20, the receiving filter is coupled between the first port 10 and the third port 30. For another embodiment of the duplexer, please refer to "Figure 14", in which the transmitting-end filter is composed of two thin-film bulk acoustic wave resonator filters of the seventh embodiment. Its insertion loss and reflection loss have characteristics as shown in "Figure 15". The invention utilizes an inductor or a capacitor and a thin-film bulk acoustic wave resonator to form a balanced filter and a duplexer circuit structure, which not only uses a single thin
第13頁 200522514 五、發明說明（9) 膜體聲波共振子以降低製程上的複雜性與不穩定度，同時 搭配電感或電容以減少所需的薄膜體聲波共振子個數來達 到縮小面積的需求。透過這些電感或電容除了可以控制濾 波器在斥帶的衰減量，並在接收濾波器輸入端，讓天線端 往接收端濾波器看進去為高阻抗，使得自傳送端送出的信 號不會反潰至接收端，而能夠直接送至天線端將信號送 出。如此就不需在天線端與接收端之間增加額外的傳輸 線，可縮小雙工器的面積與避免因外加傳輸線所產生的寄 生效應。 雖然本發明以前述之較佳實施例揭露如上，然其並非 用以限定本發明，任何熟習相像技藝者，在不脫離本發明 之精神和範圍内，當可作些許之更動與潤飾，因此本發明 之專利保護範圍須視本說明書所附之申請專利範圍所界定 者為準。Page 13 200522514 V. Description of the invention (9) Membrane bulk acoustic wave resonator to reduce the complexity and instability in the process, while matching inductor or capacitor to reduce the number of thin film bulk acoustic wave resonators required to achieve reduced area demand. In addition to these inductors or capacitors, you can control the attenuation of the filter in the repulsion band, and at the input end of the receiving filter, let the antenna end look into the receiving end filter as a high impedance, so that the signal sent from the transmitting end will not reverse. To the receiving end, and can be directly sent to the antenna end to send out the signal. In this way, there is no need to add an additional transmission line between the antenna end and the receiving end, which can reduce the area of the duplexer and avoid parasitic effects caused by the additional transmission line. Although the present invention is disclosed in the foregoing preferred embodiment as above, it is not intended to limit the present invention. Any person skilled in the art of similarity can make some modifications and retouching without departing from the spirit and scope of the present invention. The patent protection scope of the invention shall be determined by the scope of the patent application scope attached to this specification.
第14頁 200522514 圖式簡單說明 第1圖係為先前技術所揭露之平衡式架構之薄膜體聲波共 振子遽波器； 第2圖係為先前技術所揭露之非平衡式架構之薄膜體聲波 共振子濾波器； 第3圖係為本發明所揭露之平衡式架構之薄膜體聲波共振 子濾波器之第一實施例； 第4圖係為本發明所揭露之平衡式架構之薄膜體聲波共振 子濾波器之第二實施例； 第5圖係為本發明所揭露之平衡式架構之薄膜體聲波共振 子濾波器之第三實施例； 第6圖係為本發明所揭露之平衡式架構之薄膜體聲波共振 子濾波器之第四實施例； 第7圖係為濾波器的頻率響應； 第8圖係為濾波器的頻率響應； 第9圖係為本發明所揭露之平衡式架構之薄膜體聲波共振 子濾波器之第五實施例； 第1 0圖係為本發明所揭露之平衡式架構之薄膜體聲波共振 子濾波器之第六實施例； 第1 1圖係為本發明所揭露之平衡式架構之薄膜體聲波共振 子濾波器之第七實施例； 第1 2圖係為本發明所揭露之平衡式架構之薄膜體聲波共振 子濾波器之頻率響應圖； 第1 3圖係為本發明所揭露之使用平衡式架構之薄膜體聲波 共振子濾波器之雙工器；Page 14 200522514 Brief description of the diagram. Figure 1 is a thin-film bulk acoustic wave resonator with a balanced structure disclosed in the prior art. Figure 2 is a thin-film bulk acoustic wave with an unbalanced structure disclosed in the prior art. Sub-filter; FIG. 3 is the first embodiment of the thin-film bulk acoustic wave resonator of the balanced structure disclosed in the present invention; FIG. 4 is the thin-film bulk acoustic wave resonator of the balanced structure disclosed in the present invention; The second embodiment of the filter; FIG. 5 is a third embodiment of the thin film bulk acoustic wave filter of the balanced structure disclosed in the present invention; FIG. 6 is the thin film of the balanced structure disclosed in the present invention The fourth embodiment of a bulk acoustic wave filter; FIG. 7 is the frequency response of the filter; FIG. 8 is the frequency response of the filter; and FIG. 9 is the thin-film body of the balanced structure disclosed in the present invention. The fifth embodiment of the acoustic wave resonator filter; FIG. 10 is a sixth embodiment of the thin-film bulk acoustic wave filter of the balanced structure disclosed in the present invention; FIG. level Seventh embodiment of the thin-film bulk acoustic wave filter of the structure; FIG. 12 is a frequency response diagram of the thin-film bulk acoustic wave filter of the balanced structure disclosed in the present invention; FIG. A duplexer of a thin film bulk acoustic wave filter using a balanced structure disclosed by the invention;
第15頁 200522514 圖式簡單說明 第1 4圖係為本發明所揭露之使用平衡式架構之薄膜體聲波 共振子濾波器之雙工器；以及 第1 5圖係為第1 4圖之雙工器之插入損耗與反射損耗。 【圖式符號說明】 A 第一薄膜體聲波共振子 B 第二薄膜體聲波共振子Page 15 200522514 Brief description of the drawings. Figures 14 and 14 are the duplexers of the thin film bulk acoustic wave filter using the balanced structure disclosed in the present invention; and Figure 15 is the duplex of Figures 14 and 14. Device's insertion loss and reflection loss. [Illustration of Symbols] A The first film bulk acoustic wave resonator B The second film bulk acoustic wave resonator
Cp 1 第 — 電 抗 元 件 Cp2 第 二 電 抗 元 件 Csl 第 一 電 抗 元 件 Cs2 第 二 電 抗 元 件 Lpl 第 一 電 抗 元 件 Lp2 第 二 電 抗 元 件 LSI 第 一 電 抗 元 件 Ls2 第 二 電 抗 元 件 Lp3 第 二 電 感 Lp4 第 四 電 感 Ls3 第 •—- 電 感 Ls4 第 四 電 感 Tx 傳 送 濾 波 器 Rx 接 收 濾、 波 器 1 第 — 端 2 第 二 端 3 第 二 端 4 第 四 端Cp 1 The first — reactance element Cp2 second reactance element Csl first reactance element Cs2 second reactance element Lpl first reactance element Lp2 second reactance element LSI first reactance element Ls2 second reactance element Lp3 second inductance Lp4 fourth inductance Ls3 # • —Inductor Ls4 Fourth Inductor Tx Transmit Filter Rx Receive Filter, Wave Filter 1 First — Terminal 2 Second Terminal 3 Second Terminal 4 Fourth Terminal
第16頁Page 16
200522514 圖式簡單說明 ίο 第一埠 20 第二埠 30 第三埠 _!ll 第17頁200522514 Schematic description ίο First port 20 Second port 30 Third port _! Ll Page 17
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| TWI822751B (en) * | 2018-04-12 | 2023-11-21 | 美商天工方案公司 | Filter including two types of acoustic wave resonators |
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