CN108233891B - Duplexer - Google Patents
Duplexer Download PDFInfo
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- CN108233891B CN108233891B CN201810096372.7A CN201810096372A CN108233891B CN 108233891 B CN108233891 B CN 108233891B CN 201810096372 A CN201810096372 A CN 201810096372A CN 108233891 B CN108233891 B CN 108233891B
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- electrode
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- acoustic wave
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- piezoelectric layer
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- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
Abstract
The application discloses a duplexer. The duplexer includes: the device comprises a substrate, a first electrode, a piezoelectric layer and a second electrode, wherein the first electrode is positioned on the substrate, and an acoustic wave resonance part is arranged between a part of the first electrode and the substrate; a piezoelectric layer on the first electrode; a portion of the second electrode is positioned on the piezoelectric layer, and a further portion of the second electrode is positioned on the first electrode; the sound wave resonance part, the first electrode, the piezoelectric layer and a part of the second electrode, which are positioned on the piezoelectric layer, form at least one film bulk sound wave resonator; a further portion of the first electrode and the second electrode located on the first electrode constitutes at least one surface acoustic wave resonator. The application solves the problem of complex manufacturing process of the bulk acoustic wave duplexer with differential output in the related technology.
Description
Technical Field
The application relates to the field of electronic communication technology devices, in particular to a duplexer.
Background
Piezoelectric diplexers are one of the important components of hand-held mobile communication products. Currently, hand-held mobile communication products mainly adopt a duplexer made of piezoelectric materials, such as a bulk acoustic wave duplexer. In modern transceiver designs, the receive ports often take the form of differences, thereby better suppressing common mode noise and achieving better receive sensitivity.
Fig. 1 is a schematic diagram of a prior art duplexer comprised of two bulk acoustic wave filters, with a receive filter 100 in the form of a differential output. Each filter consists of three series resonators and three parallel resonators. As shown in fig. 1, the reception filter 100 is composed of series resonators 111, 112, 113 and parallel resonators 121, 122, 123. Among them, thin Film Bulk Acoustic Resonators (FBAR) and solid state assembly resonators (SMR) may be used as the series resonators and the parallel resonators. The filter 100 further comprises grounded inductances 103, 104, 105, wherein the inductances 103, 104, 105 are connected to the parallel resonators 121, 122, 123, respectively, and the grounded inductances can form transmission zero points with the parallel resonators 121, 122, 123, thereby improving the stop band rejection of the filter 100. Wherein the receive filter is connected to a Balun (Balun) to effect single-ended to differential conversion of the filter.
Balun may take a variety of implementations including transformers, L-C/C-L impedance transformers, and the like. With the continuous development of miniaturization and thinning of mobile handheld devices, there is a demand for smaller and smaller size of the used diplexer, and the additional introduction of balun into the bulk acoustic wave filter directly affects the size of the diplexer chip, and the balun also increases the insertion loss of the diplexer.
Another solution for implementing differential output by the bulk acoustic wave duplexer is to use a Coupled Resonator Filter (CRF) for the receiving filter, and the structure is shown in fig. 2. Fig. 3 is a schematic cross-section of a prior art Coupled Resonator Filter (CRF), as shown in fig. 3, having two bulk acoustic wave resonators stacked one above the other with a coupling layer separation between the two resonators. Because the coupled resonator filter is formed by stacking two bulk acoustic wave filters together while ensuring the consistency of the two resonators, the number of photolithography steps required for the Coupled Resonator Filter (CRF) is large and the manufacturing process is very complex.
Aiming at the problem of complex manufacturing process of a bulk acoustic wave duplexer with differential output in the related art, no effective solution is proposed at present.
Disclosure of Invention
The application mainly aims to provide a duplexer to solve the problem that the manufacturing process of the duplexer in the related art is complex.
In order to achieve the above object, according to one aspect of the present application, there is provided a duplexer including: the device comprises a substrate, a first electrode, a piezoelectric layer and a second electrode, wherein the first electrode is positioned on the substrate, and an acoustic wave resonance part is arranged between a part of the first electrode and the substrate; the piezoelectric layer is positioned on the first electrode; a portion of the second electrode is located on the piezoelectric layer, and a further portion of the second electrode is located on the first electrode; a part of the acoustic wave resonance part, the first electrode, the piezoelectric layer and the second electrode, which are positioned on the piezoelectric layer, form at least one film bulk acoustic wave resonator; a further portion of the first electrode and the second electrode located on the first electrode constitutes at least one surface acoustic wave resonator.
Further, the substrate has a groove, and a portion of the first electrode covers the groove to form a cavity as the acoustic wave resonator.
Further, the duplexer further includes: and an acoustic mirror between the substrate and the first electrode, wherein the acoustic mirror is the acoustic wave resonator.
Further, the acoustic mirror includes at least two layers of acoustic impedance material.
Further, the at least two layers of acoustic impedance materials are alternately formed of a first acoustic impedance material and a second acoustic impedance material, wherein the acoustic impedance of the first acoustic impedance material is smaller than that of the second acoustic impedance material.
Further, the first electrode forms an interdigital transducer and a reflective grating of the surface acoustic wave resonator, and a further part of the second electrode located on the first electrode forms an electrical connection layer of the surface acoustic wave resonator.
Further, the portions of the first electrode spaced apart on the substrate constitute an interdigital transducer and a reflective grating of the acoustic surface resonator.
Further, the materials of the first electrode and the second electrode are at least one of the following: molybdenum, tungsten, aluminum; and/or, the material of the piezoelectric layer is at least one of the following: aluminum nitride, zinc oxide, PZT; and/or the material of the substrate comprises at least one of the following: liTaO3, liNbO3.
Further, the at least one film bulk acoustic resonator constitutes a transmit filter; the at least one surface acoustic wave resonator constitutes a receiving filter.
Further, the receive filter includes at least two interdigital transducers of opposite polarity.
The application passes through the substrate, the first electrode, the piezoelectric layer and the second electrode, wherein the first electrode is positioned on the substrate, and an acoustic wave resonance part is arranged between part of the first electrode and the substrate; a piezoelectric layer on the first electrode; a portion of the second electrode is positioned on the piezoelectric layer, and a further portion of the second electrode is positioned on the first electrode; the sound wave resonance part, the first electrode, the piezoelectric layer and a part of the second electrode, which are positioned on the piezoelectric layer, form at least one film bulk sound wave resonator; the first electrode and the second electrode are positioned on the first electrode to form at least one surface acoustic wave resonator, so that the problem of complex manufacturing process of the bulk acoustic wave duplexer with differential output is solved, and the effect of simplifying the manufacturing process of the duplexer is further achieved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application. In the drawings:
fig. 1 is a schematic diagram of a prior art duplexer comprised of two bulk acoustic wave filters;
FIG. 2 is a schematic diagram of another prior art duplexer comprised of two bulk acoustic wave filters;
FIG. 3 is a schematic cross-sectional view of a Coupled Resonator Filter (CRF) of the prior art;
fig. 4 is a schematic diagram of a cross section of a sub-device of a diplexer according to a first embodiment of the application;
fig. 5 is a schematic diagram of a cross-section of a sub-device of a diplexer according to a second embodiment of the application;
fig. 6 is a schematic diagram of a diplexer according to a first embodiment of the present application;
fig. 7 is a schematic diagram of a diplexer according to another embodiment of the application; and
fig. 8 is a schematic diagram of a diplexer according to yet another embodiment of the present application.
Detailed Description
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
In order that those skilled in the art will better understand the present application, a technical solution in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the application herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The embodiment of the application provides a duplexer, which comprises: the device comprises a substrate, a first electrode, a piezoelectric layer and a second electrode, wherein the first electrode is positioned on the substrate, and an acoustic wave resonance part is arranged between a part of the first electrode and the substrate; a piezoelectric layer on the first electrode; a portion of the second electrode is positioned on the piezoelectric layer, and a further portion of the second electrode is positioned on the first electrode; the sound wave resonance part, the first electrode, the piezoelectric layer and a part of the second electrode, which are positioned on the piezoelectric layer, form at least one film bulk sound wave resonator; a further portion of the first electrode and the second electrode located on the first electrode constitutes at least one surface acoustic wave resonator.
Fig. 4 is a schematic diagram of a cross section of a sub-device of a duplexer according to a first embodiment of the present application, and the duplexer may be a piezoelectric duplexer, for example, a differential output piezoelectric duplexer, and as shown in fig. 4, a substrate of the duplexer may be a piezoelectric substrate 401, a cavity 411 is formed between a first electrode 412 and the piezoelectric substrate 401, the cavity may be formed by etching on the piezoelectric substrate, the substrate has a groove, a portion of the first electrode covers the groove to form a cavity, and the cavity serves as an acoustic wave resonator. The first electrode forms an interdigital transducer and a reflecting grating of the surface acoustic wave resonator, and the parts of the first electrode, which are arranged at intervals on the substrate, form the interdigital transducer and the reflecting grating of the surface acoustic wave resonator. The other part of the second electrode positioned on the first electrode forms an electrical connection layer of the surface acoustic wave resonator, and a plurality of acoustic wave resonance parts and a plurality of electrical connection layers are repeatedly arranged to be used as a piezoelectric duplexer.
The duplexer further includes a piezoelectric layer 413 and a second electrode 414. Materials for the piezoelectric substrate include, but are not limited to, liTaO3, liNbO3, and the like. Materials for the first and second electrodes include, but are not limited to, molybdenum, tungsten, aluminum, and the like. The piezoelectric layer material includes, but is not limited to, aluminum nitride (AlN), zinc oxide (ZnO), PZT, and the like. The cavity 411, the first electrode 412, the piezoelectric layer 413, and the second electrode 414 together form a film bulk acoustic resonator 410. The piezoelectric substrate 401, the first electrode 412, and the second electrode 414 together constitute a surface acoustic wave resonator. The first electrode 412 may form an interdigital transducer (IDT) and a reflective grating of a surface acoustic wave resonator. The second electrode 414 may constitute an electrical connection layer of the saw resonator 420. One or more of 410 and 420 are connected to each other to form a piezoelectric duplexer, the receive filter of which takes the form of a differential output.
Optionally, the material of the first electrode and the second electrode is at least one of: molybdenum, tungsten, aluminum or other metallic materials; and/or the material of the piezoelectric layer is at least one of the following: aluminum nitride, zinc oxide, PZT, or other piezoelectric material; and/or the material of the substrate comprises at least one of: liTaO3, liNbO3, or other piezoelectric substrate. At least one film bulk acoustic resonator constitutes a transmission filter; at least one of the SAW resonators constitutes a receive filter comprising at least two interdigital transducers of opposite polarity.
The embodiment adopts a substrate, a first electrode, a piezoelectric layer and a second electrode, wherein the first electrode is positioned on the substrate, and an acoustic wave resonance part is arranged between a part of the first electrode and the substrate; a piezoelectric layer on the first electrode; a portion of the second electrode is positioned on the piezoelectric layer, and a further portion of the second electrode is positioned on the first electrode; the sound wave resonance part, the first electrode, the piezoelectric layer and a part of the second electrode, which are positioned on the piezoelectric layer, form at least one film bulk sound wave resonator; the structure can solve the problem that the manufacturing process of the bulk acoustic wave duplexer with differential output is complex, thereby achieving the effect of simplifying the manufacturing process of the duplexer.
Fig. 5 is a schematic diagram of a cross section of a sub-device of a duplexer according to a second embodiment of the present application, including: a piezoelectric substrate 501; an acoustic mirror 530, 530 is formed by deposition on a piezoelectric substrate, consisting of thin films 515, 516, 517, 518, 519, where 515, 517, 519 are low acoustic impedance materials such as silicon dioxide. 516. 518 is a high acoustic impedance material such as tungsten. A first electrode 512; a piezoelectric layer 513; a second electrode 514. Materials for the piezoelectric substrate include, but are not limited to, liTaO3, liNbO3, and the like. Materials for the first and second electrodes include, but are not limited to, molybdenum, tungsten, aluminum, and the like. The piezoelectric layer material includes, but is not limited to, aluminum nitride (AlN), zinc oxide (ZnO), PZT, and the like. The acoustic mirror 530, the first electrode 512, the piezoelectric layer 513, and the second electrode 514 together form a thin film bulk acoustic resonator 510. The piezoelectric substrate 501, the first electrode 512, and the second electrode 514 together constitute an integral surface acoustic wave resonator. The first electrode 512 may form an interdigital transducer (IDT) and a reflection grating of a surface acoustic wave resonator. The second electrode 514 may constitute an electrical connection layer of the saw resonator 420. One or more of 510 and 520 are connected to each other to form a piezoelectric duplexer, the receive filter of which takes the form of a differential output.
Fig. 6 is a schematic diagram of a duplexer according to a first embodiment of the present application, and as shown in fig. 6, a piezoelectric duplexer 600 is composed of a transmission filter 610 and a reception filter 620. The filter 610 is composed of series resonators 611, 612, 613 and parallel resonators 614, 615, 616. The structures of the series resonators and the parallel resonators are a thin film bulk acoustic wave filter shown at 410 in fig. 4 or a thin film bulk acoustic wave filter shown at 510 in fig. 5. The filter 610 further includes grounded inductors 617, 618, 619, wherein the inductors 617, 618, 619 are coupled to the parallel resonators 614, 615, 616, respectively, and wherein the grounded inductors form transmission zeros with the parallel resonators 614, 615, 616 to improve stop band rejection of the filter 100.
The filter 620 is composed of interdigital transducers (IDT) 622, 623, 624 and reflective gratings 621, 625, and the interdigital transducers (IDT) 622, 623, 624 and reflective gratings 621, 625 have a structure shown as 420 in fig. 4 or 520 in fig. 5. An interdigital transducer (IDT) 623 has one end connected to the input port of the filter and the other end grounded. An interdigital transducer (IDT) 622 is connected at one end to the output port 643 of the filter and at the other end to ground. An interdigital transducer (IDT) 624 is connected at one end to the output port 644 of the filter and at the other end to ground. The filter 620 has one signal input port and two signal output ports 643, 644. Because the interdigital transducers (IDTs) 622 and 624 have opposite polarities, the signals output by the two signal output ports 643, 644 have equal amplitudes and 180 phase difference o 。
631 and 632 are phase shifters, and the phase shifters 631 and 632 are such that the filter 610 and the filter 620 do not affect each other within the respective pass bands. Phase shifters 631 and 632 may be formed in various forms such as inductors, capacitors, transmission lines, and the like. While in some circuits phase shifters 631 and 632 may be combined into one.
Fig. 7 is a schematic diagram of a duplexer according to another embodiment of the present application, as shown in fig. 7, the duplexer structure of the embodiment is the same as that of the first embodiment except that a resonator 731 is further provided between a phase shifter 732 and a filter 720.
Fig. 8 is a schematic diagram of a duplexer according to still another embodiment of the present application, as shown in fig. 8, which has the same structure as the duplexer of fig. 7 except that the interdigital transducer of this embodiment is changed from three to five, and a resonator 831 is also connected to interdigital transducers 826 and 827.
Compared with the prior art, the application has the following advantages: on the premise of not increasing the complexity of the manufacturing process of the film bulk acoustic wave filter and adding an extra Balun (Balun), the output form from single end to differential of the film bulk acoustic wave filter is realized, the volume of the differential film bulk acoustic wave duplexer is reduced, and meanwhile, the insertion loss of the receiving filter of the duplexer is improved, so that the receiver obtains better receiving sensitivity.
In the foregoing embodiments of the present application, the descriptions of the embodiments are emphasized, and for a portion of this disclosure that is not described in detail in this embodiment, reference is made to the related descriptions of other embodiments.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (9)
1. A duplexer, comprising: a substrate, a first electrode, a piezoelectric layer, a second electrode, wherein,
the first electrode is positioned on the substrate, and an acoustic wave resonance part is arranged between a part of the first electrode and the substrate;
the piezoelectric layer is positioned on the first electrode;
a portion of the second electrode is located on the piezoelectric layer, and a further portion of the second electrode is located on the first electrode;
a part of the acoustic wave resonance part, the first electrode, the piezoelectric layer and the second electrode, which are positioned on the piezoelectric layer, form at least one film bulk acoustic wave resonator;
a further part of the first electrode and the second electrode located on the first electrode forms at least one surface acoustic wave resonator;
the materials of the first electrode and the second electrode are at least one of the following materials: molybdenum, tungsten, aluminum; and/or, the material of the piezoelectric layer is at least one of the following: aluminum nitride, zinc oxide, PZT; and/or the material of the substrate comprises at least one of the following: liTaO3, liNbO3.
2. The duplexer according to claim 1, wherein the substrate has a groove, and a portion of the first electrode covers the groove to form a cavity as the acoustic wave resonance portion.
3. The duplexer of claim 1, further comprising: and an acoustic mirror between the substrate and the first electrode, wherein the acoustic mirror is the acoustic wave resonator.
4. The duplexer of claim 3, wherein the acoustic mirror comprises at least two layers of acoustic impedance material.
5. The duplexer of claim 4, wherein the at least two layers of acoustic impedance material are alternating of a first acoustic impedance material and a second acoustic impedance material, wherein the first acoustic impedance material has a smaller acoustic impedance than the second acoustic impedance material.
6. The duplexer of claim 1, wherein the first electrode forms an interdigital transducer and a reflective grating of the surface acoustic wave resonator, and wherein a further portion of the second electrode on the first electrode forms an electrical connection layer of the surface acoustic wave resonator.
7. The duplexer of claim 6, wherein the portions of the first electrode spaced apart on the substrate constitute an interdigital transducer and a reflective grating of the acoustic surface resonator.
8. The duplexer according to any one of claims 1 to 7, characterized in that the at least one thin film bulk acoustic resonator constitutes a transmission filter; the at least one surface acoustic wave resonator constitutes a receiving filter.
9. The duplexer of claim 8, wherein the receive filter comprises at least two interdigital transducers of opposite polarity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810096372.7A CN108233891B (en) | 2018-01-31 | 2018-01-31 | Duplexer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810096372.7A CN108233891B (en) | 2018-01-31 | 2018-01-31 | Duplexer |
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| Publication Number | Publication Date |
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| CN108233891A CN108233891A (en) | 2018-06-29 |
| CN108233891B true CN108233891B (en) | 2023-10-27 |
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| CN111865248B (en) * | 2020-04-30 | 2021-11-02 | 诺思(天津)微系统有限责任公司 | Resonator assembly, semiconductor device, electronic apparatus, and method of manufacturing resonator assembly |
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| JP5220503B2 (en) * | 2008-07-23 | 2013-06-26 | 太陽誘電株式会社 | Elastic wave device |
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Application publication date: 20180629 Assignee: Suzhou zexun Technology Co.,Ltd. Assignor: HUBEI QUANTGRAV TECHNOLOGY Co.,Ltd. Contract record no.: X2019320010013 Denomination of invention: Communication system duplexer and multiplexer and duplexer and multiplexer method License type: Common License Record date: 20191226 |
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