TW200521271A - A method and structure for wafer of semiconductive material - Google Patents

Abstract

A method and structure for wafer of semiconductive material is provided. An ingot of semiconductive material has a surface. A first dielectric layer is formed on the surface of the ingot, which also has a surface. The surface of the first dielectric layer is larger than that of the ingot. A second dielectric layer is next formed on the surface of the first dielectric layer. The surface of the second dielectric layer is larger than that of the first dielectric layer. A semiconductive wafer includes a slip core formed with a semiconductive material. A first ring is proximity to the outer periphery of the slip core and is formed with a first dielectric material. The outer periphery of the first ring is larger than that of the slip core. A second ring is proximity to the outer periphery of the first ring and formed with a second dielectric material. The outer periphery of the second ring is larger than that of the first ring. With the first and second rings, the edge of one wafer is consolidated for free from chipping.

Description

200521271 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method and structure for forming a semiconductor material wafer, and more particularly, to a method and structure for forming a wafer with a sacrificial layer [prior art] ] The CZ single crystal growth process is derived from the crystallization speed theory of c Z 0 chra 1 ski in 1918, named 'True for silicon single crystal growth in about 1 g 5 2 years by τ ea 1 and Bueh. 1 er was published for the first time. Through continuous technological improvements to grow larger and more perfect crystals, the widely used M-method long-distance dislocation-free Shi Xi single crystal was first developed by Das h. Ways to success. This method can be divided into the following steps: (1) raw material storage (p〇ly

Charging) (2) Meltdown (3) Necking and Crown (4) Body (5) Tail growth. (1) Stacking of raw materials and (2) Smelting. Put a brand-new quartz into a graphite crucible, and then put polycrystalline silicon blocks and alloy materials into the quartz crucible. In order to reduce the quartz particles caused by the friction between Shixi block and hanging horse, care must be taken in the discharging process. Pick a silicon block with a large diameter and place it on the bottom and side of the pot, and place the alloy on the center of the stack. Then close the furnace, evacuate, measure the leak rate, heat it above u to completely melt, and keep it for a while to melt and mix. If the block and granular polycrystalline raw materials are mixed and used, before the block raw materials are completely melted, the granular raw materials are slowly added from the furnace side to achieve a predetermined total amount of raw materials. Gas volatility, liquid

Page 7 200521271 V. Description of the invention (2) The body temperature, crucible temperature and thermal field reach a stable equilibrium state. (3) Fine adjustment of the melt surface temperature from the long neck to the end of (5). Day Xi Yue finishes by immersing the crystal in the liquid surface and observing the melting condition. + &; 疋 疋 ,, «(!. 7xl. 7x2. Tcm) ^ 0.3cm. If this seed is soaked, it is necessary to reduce the output power. If there is an immediate dendritic polycrystal from the soak To increase the output power. At an appropriate temperature, the seed crystal rotates, and a new single crystal with a diameter of 0.5 to 0.7 cm needs to be pulled out at the end, which is called ": seed crystal soaking neck diameter growth rate and The internal quality is good or bad. This month's skills are controlled by Emperor i. The purpose of the long neck is to remove the defects of plastic deformation caused by the crystals over time, such as differential row machining and forming holes (Vacancy), or seed contact melting (cacation) and defects. 4After heating, the ingot that has been grown is cut into a wafer. After the ingot is grown, you can grow several components on the wafer. The number of wafers is not easy. Therefore, when the wafer is later constructed. It is because of external factors that the wafer edge or even the body is broken-if • can be viewed through the instrument during the manufacturing process, it is often j and the crack must be. Xu Xi's Resources and Costs "[Summary of the Invention] For the above-mentioned shortcomings, to avoid the situation of wafers in the manufacturing process, the main purpose of the present invention is to provide J: the edge of the soil is fragmented :: methods and knots for forming wafers Steps and structure of crystal layer of semiconductor material in ingot j to avoid wafer edge. = A situation where sacrifices are formed.

200521271

Another object of the present invention is to provide a method and structure for forming a wafer with a sacrificial layer of a dielectric layer, which can be applied to wafers of various sizes with simple steps. In order to achieve the above object, the present invention proposes a method for forming a semiconductor material wafer. First, an ingot of semiconductor material is formed, which has a first surface. Then, a first dielectric layer is formed on On the first table, it has a second surface, wherein the second surface is larger than the first surface and a second dielectric layer is formed on the second surface, and it has a first-', wherein the third surface is larger than the first Two surfaces. ^ Two-surface Another aspect of the present invention is to propose a semiconductor, including a piece of core, which is formed of a semiconductor material, wherein the center of the circular structure has a first outer periphery; a first annular portion and This first sheet-shaped core is adjacent to each other and is formed of a first dielectric material, wherein the first annular portion = peripheral phase, and the second outer periphery is larger than the first outer periphery; a second annular portion ^ $ 有 〜 It is formed of a second dielectric material, wherein the second outer periphery has a third outer periphery larger than the second outer periphery. A detailed description is provided below with a detailed description of the accompanying drawings and the attached drawings. Women's dan Lugu Feng Yu nn t. Explanation: It is easy to understand the purpose, technical effect, technical content, characteristics and achievement of the present invention. 'Dang Geng IV. [Implementation]

When forming a square scale of a semiconductor material wafer, the formation of a sacrificial layer is increased to avoid edge chipping of the wafer due to various wafer sizes.

Structure and knot

200521271 V. Description of the invention (4) As shown in the first figure A, it is Panshi ^-jfc. Jg, # # The present invention grows a side view of a semiconductor block, and chooses Luofan in a casting block 1 · X 1 0ttr., Yi Zhi (1 ngot support mi live a prayer block of a semiconductor material 10. This clang ϊ Ϊ When the outline is like the conventional ^, the semiconductor material of the ingot 10 can be silicon or arsenic Gallium and the like are generally used as round semiconductor materials and are not limited to the above. In one embodiment, the 'grown ingot 10' can be used as the ingot required for the wafer at 4 忖 to i 2. A 12-inch wafer does not depart from the method and structure of the present invention. The first diagram B is the side view of the invention where the ingot is placed in a reaction chamber to form a first dielectric layer. As shown in the figure, after growing, The ingot has a surface (P 1 1 1 ar) surface 1 4 which forms an outer perimeter. After the ingot 10 is polished, it is placed in a reaction chamber 16 to form A first dielectric layer 24, please also refer to the second figure, that is, the ingot 10 is heated in the reaction chamber 16 and is formed on the surface 4 The thickness of the oxide layer 18, such as silicon monoxide, may be determined as needed. Then, referring to FIG. 1C, a schematic side view of a second dielectric layer in which the ingot is placed in a reaction chamber according to the present invention is shown. For the ingot 10 covered with an oxide layer, a second dielectric layer 26 is formed on the surface of the first dielectric layer 24 in the same reaction chamber 16 or another reaction chamber. Please refer to the second figure for comparison. The best one is to deposit a nitride layer, such as a silicon nitride, on the surface of the oxide layer by chemical or physical vapor deposition. After the thickness is determined as required, as shown in the first D diagram, it is The invention will have a first and

Page 10 200521271

5. Description of the invention (5) Not intended. Using sawing, the thickness of the columnar ingot of the second dielectric layer can be cut into the side of the wafer. The conventional technique is to cut the columnar portion of the ingot 10 into a number of wafers. wafer) 20, subject to availability. The second figure is a schematic front view of the wafer of the present invention. As shown in the figure, the circle 20 has a sheet-shaped core 22, a ring-shaped first dielectric layer 24, and an electric core layer 26. The lamellar core 22 is sliced from a column-shaped ingot, which is counted as 1 " eight 7 girth t. An outer periphery 30, the outer periphery 3 of this lamellar core 2 2 and a ring ^ two into eight 24 Adjacent; the ring-shaped first dielectric layer 24 has an inner edge and-the outer periphery ^ electricity 2, the inner edge is close to the outer periphery 30 of the sheet core 2 2, so the ring ^

The inner edge of the layer 24 is approximately equal to the outer periphery 30. Secondly, since the first dielectric layer 24 covers the 桎 -shaped ingot 丨 0 with a thickness, that is, in the first c figure; 1 the first ^ dielectric layer 24 surface will be larger than the surface of the ingot 10, so The outer periphery 32 of the annular first dielectric layer 24 will be larger than the outer periphery 30 of the sheet-like core 22. Zhimen II1, you_renzimu. In the same place, the ring-shaped second dielectric layer 26 has an inner edge and an outer periphery, and the inner edge is close to the outer periphery 32 of the ring-shaped first dielectric layer 24. The outer edge 34 of the annular second dielectric layer '26 will be larger than the outer periphery 32 of the annular first dielectric layer 24. "

To sum up, the outer periphery of the sheet core 2 2 is protected by a ring-shaped first dielectric layer 2 4 and a ring-shaped second dielectric layer 26, which can provide jig holding during the manufacturing process, which can prevent the jig from being too close to the sheet. At the core 22, the external force may cause the edge of the wafer to chip. Therefore, the ring-shaped first dielectric layer 24 and the ring-shaped second dielectric layer 26 of the present invention can be used as a sacrificial layer to protect the wafer and reduce the rate of damage to the wafers during the process. The embodiments described above are only for explaining the technical ideas and features of the present invention.

Page 11 200521271 V. Description of the invention (6) The purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly. When the scope of the patent of the present invention cannot be limited, it means Equal changes or modifications made by the disclosed spirit should still be covered by the patent scope of the present invention. [Illustration of drawing number]

10 Ingot 12 Ingot support 14 Surface 16 Reaction chamber 20 Wafer 22 Flaky core 24 First dielectric layer 26 Second dielectric layer 30 Outer periphery 32 Outer periphery 34 Outer periphery Page 12 200521271 An A diagram is a schematic plan view of a semiconductor ingot growing in the present invention. FIG. 1B is a schematic plan view of the present invention where the ingot is placed in a reaction chamber to form a first dielectric layer. FIG. 1C is a schematic plan view of a second dielectric layer in which an ingot is placed in a reaction chamber according to the present invention. FIG. 1D is a schematic side view of the present invention sawing a columnar ingot having first and second dielectric layers into a wafer. The second figure is a schematic front view of a wafer structure formed by the present invention.

Page 13

Claims (1)

200521271 2 4 6 7 8 Patent application A method for forming a semiconductor material wafer includes the following steps: 1) an ingot of semiconductor material having a first surface; forming a first dielectric layer on the first surface A second surface, wherein the second surface is larger than the first surface; and a second dielectric layer is formed on the second surface, which has a third surface where the third surface is larger than the first surface第二 表面。 The second surface. The method and method of forming a semiconductor material wafer described in item 1 of the patent scope further includes grinding the first surface. The method for forming a semiconductor material wafer as described in item 1 of the scope of patent application, further includes cutting the ingot, the first dielectric layer and the second dielectric f layer 'into a plurality of wafers. The method for forming a semiconductor material wafer according to item 3 of the scope of patent application ', wherein each of the sheet wafers includes the first surface and the third surface. From the 4th to the J: the formation of a semiconductor material wafer as described in item i of the patent scope to form it, the step of forming the first dielectric layer includes heating the ingot Λ to form an oxide layer. UPlease refer to item i for forming a layer of a semiconductor material wafer. The step of forming the second dielectric layer includes cutting into a nitride = forming a semiconductor as described in item 6 of the scope, and the step of forming the nitride layer is performed in a chemical = manner. Preformed gas phase product formula as described in item 6 of the patent application for forming a semi-conductor body material wafer page 14 200521271 Method. The step of forming the nitrided layer in the physical vapor phase is a method of forming a semiconductor material wafer. A method of forming a columnar scale of a semiconductor material is formed. Steps: Heating the columnar ingot to form a First A dielectric layer is cut 12 in the columnar ingot, such as a square layer, such as a square layer 13, a first dielectric layer is stacked on the first dielectric layer, and the columnar ingot, the first A dielectric layer and the second dielectric form a plurality of wafers, each of which is a wafer; a columnar ingot, the first dielectric layer, and the second dielectric layer. The method for forming a semiconductor material described in item 9 of the patent application scope further includes grinding the columnar ingot. Β 'The method for forming a semiconductor material as described in item 9 of the scope of patent application, wherein the step of forming the first dielectric layer includes forming a method for forming a wafer of semiconductor material as described in item 9 of the patent scope, wherein The step of forming the second dielectric layer includes forming an atmospheric semiconductor wafer structure, including: a chip core formed of a semiconductor material, wherein the chip core has a first outer periphery; a first ring The shaped portion is adjacent to the first outer periphery and is formed of a first dielectric material, wherein the first annular portion has a second outer periphery that is larger than the first outer periphery; and 200521271 VI. Application scope of patents-Second ring part 14 15 16 17 18 19 20 The electric side should apply for the first half, if the half should apply for the first neighbor, if the first neighbor should apply, One pillar block, one oxygen side, and one nitrogen side material are formed larger than the patented conductive material, the patented conductive material, and the patented dielectric material are divided into the first and the second outer perimeter. The 13th item is the silicon material perimeter. The item is Kunhuawei, the 13th material is oxygen, the 13th material is nitrogen, the patent, the second dielectric material, the patent scope, and the 13th item. The second ring is a semiconducting cast with a chemical layer. The layer is formed by a ring-shaped part with an inner periphery of the 18th item in the first range, and a round structure with an inner periphery of the first body crystal. The block has a first surface in half; The second surface of the second surface covers the semiconducting material described in the second annular portion of the second peripheral phase of the third surface of the third surface. The semi-conductive gallium (AsGa). The semi-conductive silicon. The semi-conductive silicon. The first inner periphery of the semiconducting is substantially equal to the second inner periphery of the semiconducting is approximately equal to the shape of the conductive material adjacent, which has an integrated wafer structure, a wafer structure, a wafer structure, and a wafer structure. The structured wafer junction is connected to the first first outer body wafer junction and the second second outer periphery to the third outer periphery structure, wherein the structure is in which the structure is in which the structure is in which the structure is in which the outer periphery is adjacent to each other. . Structure, where the outer perimeter is adjacent to each other. One surface is larger than the first surface; and two surfaces are larger than the second component, wherein the columnar casting has a second table and it has a third table surface Page 16 200521271 6. Scope of Patent Application Page 17