TW200520893A - Conductive polishing article for electrochemical mechanical polishing - Google Patents

Conductive polishing article for electrochemical mechanical polishing Download PDF

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Publication number
TW200520893A
TW200520893A TW093116351A TW93116351A TW200520893A TW 200520893 A TW200520893 A TW 200520893A TW 093116351 A TW093116351 A TW 093116351A TW 93116351 A TW93116351 A TW 93116351A TW 200520893 A TW200520893 A TW 200520893A
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TW
Taiwan
Prior art keywords
conductive
abrasive
layer
item
scope
Prior art date
Application number
TW093116351A
Other languages
Chinese (zh)
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TWI285576B (en
Inventor
Youg-Qi Hu
Alain Duboust
Antoine P Manens
Stan D Tsai
Paul D Butterfield
Yan Wang
Feng Q Liu
Siew S Neo
Liang Yuh Chen
Yuan A Tian
Sen-Hou Ko
Robert A Ewald
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Applied Materials Inc
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Priority claimed from US10/455,941 external-priority patent/US6991528B2/en
Priority claimed from US10/455,895 external-priority patent/US20040020789A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200520893A publication Critical patent/TW200520893A/en
Application granted granted Critical
Publication of TWI285576B publication Critical patent/TWI285576B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00Combined machining
    • B23H5/06Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08Electrolytic grinding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted to polish a substrate. The fabric layer may be woven or non-woven. The conductive layer may be comprised of a soft material and, in one embodiment, the exposed surface may be planar.

Description

200520893 玖、發明說明二 【發明所屬之技術領域】 本發明係關於一種用來將一基 物及設備。 表面千坦化的製造 【先前技術】 次四分之一公釐多層金屬為下一 127代的超大型葙體 電路(ULSI)的主要關鍵技術之一 … ^又坷旳核心所在之吝 層内連線結構需要將形成在高深寬比孔内,勺 層孔,接線及其它特徵結構在内, λ ;ι r 幻円連線特徵結構平扭 化。廷4内連線特徵結構之可靠 非旧办成對於ULSI的成 及對於提高每一基材或晶粒上的 丄 θ , 电得在度與品質的持續努 力而言疋非常地重要的。 在積體電路及其它電子元件的製造中,介電材質被沉 積於-基材的表面上或從該表面被去除掉1體,半導體, 及介電材質可用多種技術來沉積。 W 在現代製程中常用的沉 積技術包括物理氣相沉積(PVD)复 )其亦被稱為濺鍍,化學痛 相沉積(CVD),電漿強化的化學 、 化學電鍍(ECP)。 电 當物質層依序地被沉積及丰^ 士 谓次去除時,基材的最上層表面 的整個面上會呈現非平面,因而 雨要平坦化。將一表面平 坦化,或「研磨」一表面,是將 疋鮮物質從基材的表面上去 掉用以形成一大致均勻,平坦的 、 w表面的一種處理。平坦化 在去除不想要的秒面拓樸及表面 缺fe ’如粗糖的表面,結 3 200520893 塊的物質,·沾θ μ 、、、Q晶袼損壞,刮痕及受污染的層或物質,上曰 很有用的。承i 定 十垣化在藉由去除掉過多被用來填充特徵沾 的沉積物而报士& 7彳又〜構 也成特徵結構於一基材上及提供一均勻的 供後續的金屬外+ 地 表面 %屬化及處理之用等方面亦是很有用的。 化予機械平坦化,或化學機械研磨(CMP),是基 坦化中經當田α ^貫用到的技術。CMP使用一化學組成,典型 —泥f ^ ^ 4再它的流體媒介,來選擇性地將物質從基材上去 除掉。在傳統的CMP技術中,一基材載具或研磨頭被安裝 在一載具組件上且位在與一 CMP設備中的一研磨墊相接 觸的位置。該載具頭組件提供可控制的壓力於該基材上用 以迫擠基材頂抵該研磨墊。該研磨墊被一外部的驅動力相 對於該基材移動。該CMP設備實施一研磨或搓揉運動於該 基材的表面與該研磨墊之間,同時施加一研磨組成來進行 化學作用及/或機械作用以及將物質從該基材的表面 除掉。 在積體電路製造中經常被使用的一種物質為銅,因為 其具有所想要的電子特性。然而,銅具有其特殊的製造問 題。例如,銅很難形成圖案及蝕刻且新的處理與技術,如 鑲嵌或雙鑲嵌處理,被用來形成銅基材特徵結構。在鑲散 處理中,一特徵結構被界定於一介電材質中及之後被鋼所 填充。具有低介電常數,如小於3者,的介電材質被使用 在鋼鑲嵌結構的製造中。阻障層材質在銅材質的沉積之前 即被保形地沉積在形成於該介電層上的特徵結構的表面 上。鋼材質然後被沉積於該阻障層及周圍區域之上。然而, 200520893 特徵.結構的鋼填充常會在基材表面上形成過多的銅材質, ’、必,被去除掉用以形成一被鋼填充的特徵結構於該介電 層上並準備該基材表面以供後續處理之用。 在研磨鋼材質上的一項挑戰為,導電材質與阻障層之 間的介面通常是非平面的且殘留的銅材質被存留在由該非 明面的介面所形成的不規則部分中β χ,該導電材質及阻 障材質通常是以不同的速率從基材上被去除掉,以上兩種 情形都會造成過多的導電材f被留下來而在基材表面上形 成殘留物因此,(^著形成於基材表面上的特徵結構的密 度及大小的不同’基材表面上會具有不同的表面拓樸。鋼 材質延著此基材表面上之不同的表面拓樸其被去除的速率 亦是不同’而這將會讓基材表面上之有效的鋼材質去除及 基材表面的最終平坦度很難達成。 將所有不想要的銅材質從基材表面上去除掉的一個 解決方法為過度研磨該基材表面。“,某些材質的過度 研磨會造成拓樸上缺陷的形成,如在特徵結構中的下凹: 凹陷,其被稱為盤形化,或介電材質的過度去除,其被稱 為侵蝕。因盤形化或侵蝕所造成的拓樸上的缺陷會進一步 導致額外材質,如在其下的阻障層材質’之不均勻的去除, 且產生一具有比所想要的研磨品質還差的基材表面❶ 銅表面研磨的另一項問題是因為使用低介電常數(k) 的介電材質來在基材表面上形成銅鑲嵌而產生的。低让介 電材質,如摻雜了碳的氧化矽,在傳統的研磨壓力_(即,1 6Psi),其稱為下壓力,之下會變形或龜裂,這將會對基材 200520893 -的研磨品質有不利的影響及對於元件的形成有不良的影 響。例如,該基材與研磨墊之間的相對旋轉運動會在基材 表面上誘發一剪力並將該低k材質變形而形成拓樸上的缺 陷,這將對於後續的研磨有不利的影響。 研磨在低介電常數材質中的鋼的一個解決之道為使 用電機械研磨(ECMP)技術來研磨鋼。ECMP技術藉由電化 學分解同時用比傳統CMP處理小的機械研磨力研磨該基 材而來將導電材質從基材表面上去除掉。該電化學分解是 藉由施加一偏壓於一陰極與基材表面之間來實施的,用以 將導電材質從基材表面上移除至周圍的界解液中。 在一 ECMP系統的實施例中,該偏壓是藉由在一基 材支撐裝置上與基材表面成電氣聯通的一圈導電接點來施 加的。然而,該接點環已被觀察到在基材表面上會表現出 不均勻的電流分布,而導致不均勻的分解結果。機械研磨 疋藉由將該基材設置在與傳統的研磨墊接觸的位置且提供 匕們之間的相對運動來實施的。然而,傳統的研磨墊會限 制電解液流到基彩的表面上。此外,該研磨墊可能包含絕 、緣材質而這將會干擾到施加偏壓至基材表面上並導致在該 表面上的導電材質的一不均勻的分解。 因此’對於一種用於基材表面上的導電材質的去除之 改良的研磨物存在著需求。 【發明内容】 本發明大體上提供一種製造物及一種用來將一基材上 6 200520893 的層平坦化之設備,其使用了電化學沉積技術、電化學分 解技術、研磨技術及它們的組合。200520893 (ii) Description of the invention [Technical field to which the invention belongs] The present invention relates to a substrate and equipment. Surface-thinned manufacturing [previous technology] The next quarter-millimeter multilayer metal is one of the key technologies for the next 127th generation of ultra-large body circuit (ULSI) ... ^ The core layer The connection structure needs to be formed in a high aspect ratio hole, a spoon layer hole, a wiring and other characteristic structures. The reliability of the interconnected characteristic structure in the case of Ting 4 is very important for the success of ULSI and for the continuous efforts to improve 度 θ, power, and quality on each substrate or grain. In the manufacture of integrated circuits and other electronic components, dielectric materials are deposited on or removed from the surface of a substrate, and semiconductors and dielectric materials can be deposited using a variety of techniques. The deposition techniques commonly used in modern processes include physical vapor deposition (PVD), which is also known as sputtering, chemical pain deposition (CVD), plasma enhanced chemistry, and chemical plating (ECP). When the material layer is sequentially deposited and removed, the entire surface of the uppermost surface of the substrate will be non-planar, so the rain will be flat. Flattening a surface, or "grinding" a surface, is a treatment that removes fresh matter from the surface of the substrate to form a substantially uniform, flat, w surface. Flattening removes unwanted topologies and surface defects, such as the surface of raw sugar, knots 3, 2005, 20,893 pieces of material, 沾 μ, 、, 袼, 袼 crystal damage, scratches, and contaminated layers or substances, Last time was very useful. Cheng Dingshiyuan reported that by removing too many deposits that are used to fill the characteristic contamination, the structure is also formed into a characteristic structure on a substrate and provides a uniform outer metal. + The surface area% is also useful for chemical conversion and treatment. Chemical mechanical flattening, or chemical mechanical polishing (CMP), is a technique commonly used in the field during the on-site alpha process. CMP uses a chemical composition, typically-mud f ^ ^ 4 and its fluid medium to selectively remove substances from the substrate. In conventional CMP technology, a substrate carrier or polishing head is mounted on a carrier assembly and is in contact with a polishing pad in a CMP apparatus. The carrier head assembly provides a controlled pressure on the substrate to force the substrate against the polishing pad. The polishing pad is moved relative to the substrate by an external driving force. The CMP device performs an abrasive or kneading motion between the surface of the substrate and the polishing pad, and simultaneously applies an abrasive composition to perform chemical and / or mechanical effects and remove substances from the surface of the substrate. One substance often used in the manufacture of integrated circuits is copper because it has the desired electronic characteristics. However, copper has its special manufacturing problems. For example, copper is difficult to pattern and etch, and new processes and techniques, such as damascene or dual damascene processes, are used to form copper substrate features. In the embedding process, a feature is defined in a dielectric material and then filled with steel. Dielectric materials with low dielectric constants, such as less than 3, are used in the manufacture of steel mosaic structures. The barrier layer material is conformally deposited on the surface of the feature structure formed on the dielectric layer before the copper material is deposited. A steel material is then deposited over the barrier layer and surrounding areas. However, 200520893 features. Structural steel filling often forms too much copper material on the surface of the substrate, and must be removed to form a steel-filled characteristic structure on the dielectric layer and prepare the substrate surface. For subsequent processing. A challenge on the abrasive steel material is that the interface between the conductive material and the barrier layer is usually non-planar and the remaining copper material is retained in the irregular portion formed by the non-bright surface interface β χ, the The conductive material and the barrier material are usually removed from the substrate at different rates. The above two situations will cause too much conductive material f to be left behind to form residues on the surface of the substrate. Different densities and sizes of characteristic structures on the surface of the substrate 'the surface of the substrate will have different surface topologies. Different surface topologies on which the steel material extends along the surface of the substrate will be removed at different rates' This will make effective steel material removal on the substrate surface and final flatness of the substrate surface difficult to achieve. One solution to remove all unwanted copper material from the substrate surface is to overgrind the substrate. Material surface. ", Excessive grinding of certain materials can cause the formation of topological defects, such as depressions in characteristic structures: depressions, which are called disk-shaped, or excessive removal of dielectric materials, which It is called erosion. Defects in the topography caused by dishing or erosion will further cause additional materials, such as the uneven removal of the barrier material below it, and produce an Substrate surface with poor grinding quality 另一 Another problem with copper surface grinding is caused by the use of a low-k dielectric material to form copper inlays on the substrate surface. Low-k dielectric materials, Such as carbon-doped silicon oxide, under the traditional grinding pressure (ie, 16Psi), which is called downforce, it will be deformed or cracked, which will be detrimental to the grinding quality of the substrate 200520893- Influence and adversely affect the formation of the element. For example, the relative rotational movement between the substrate and the polishing pad will induce a shear force on the surface of the substrate and deform the low-k material to form defects on the topology, which It will have an adverse effect on subsequent grinding. One solution to grinding steel in low dielectric constant materials is to use electromechanical polishing (ECMP) technology to grind the steel. ECMP technology uses electrochemical decomposition while using Handling small machines The base material is ground to remove the conductive material from the surface of the base material. The electrochemical decomposition is performed by applying a bias voltage between a cathode and the surface of the base material to remove the conductive material from the base material. The material surface is removed to the surrounding solution. In an embodiment of the ECMP system, the bias voltage is applied by a circle of conductive contacts in electrical communication with the substrate surface on a substrate support device. However, the contact ring has been observed to exhibit an uneven current distribution on the surface of the substrate, resulting in uneven decomposition results. Mechanical polishing is performed by placing the substrate on a conventional polishing pad. The position of the contact is implemented by providing relative movement between the daggers. However, conventional polishing pads will limit the electrolyte flow to the surface of the base color. In addition, the polishing pads may contain insulation and edge materials which will interfere Applying a bias voltage to the surface of the substrate causes an uneven decomposition of the conductive material on the surface. Therefore, there is a need for an improved abrasive for removing conductive materials on the surface of a substrate. [Summary of the Invention] The present invention generally provides an article of manufacture and an apparatus for planarizing a layer on a substrate, using an electrochemical deposition technique, an electrochemical decomposition technique, a grinding technique, and combinations thereof.

在一態樣中,一種用於研磨一基材之研磨物包括—本 體,其具有一表面適用以研磨該基材以及至少一導電元 件’該導電元件係至少部分被埋設在本體内。該導電元件 可包括數個以一導電材料塗覆之纖維、一導電填料或其結 合,其可設置於黏結劑中。該導電元件可包括一以導電材 料塗覆之混雜纖維,其並至少部分埋設於該本體中、一以 導電材料塗覆之合成纖維、導電填料、或其混合物以及一 黏結劑,其係部分埋設於該本體中、或其混合物。該導電 元件可具有一接觸面,其延伸超過一由該研磨表面所界定 之平面,並可包括一線圈、一或多個迴圈、一或多個線股 (strand)、一混雜纖維材料或其混合物。該研磨物上可形成 數個穿孔以利物質從其間流過。In one aspect, an abrasive for grinding a substrate includes a body having a surface suitable for grinding the substrate and at least one conductive element. The conductive element is at least partially buried in the body. The conductive element may include a plurality of fibers coated with a conductive material, a conductive filler, or a combination thereof, which may be disposed in an adhesive. The conductive element may include a hybrid fiber coated with a conductive material, which is at least partially buried in the body, a synthetic fiber coated with a conductive material, a conductive filler, or a mixture thereof, and an adhesive, which is partially buried In the body, or a mixture thereof. The conductive element may have a contact surface extending beyond a plane defined by the abrasive surface, and may include a coil, one or more loops, one or more strands, a hybrid fiber material, or Its mixture. Several perforations may be formed in the abrasive to facilitate the flow of matter therethrough.

於另一態樣中,係提供一種用來處理一基材表面之研 磨物,例如沉積於該基材上之導電層。該研磨物包括一本 體’其具有至少數個以導電材料塗覆之纖維部、數個導電 填料或者其結合,且其係適用於研磨該等基材。該研磨物 上可形成數個穿孔及數個溝槽,以利物質從其間流過。 於又一態樣中,該等研磨物可置於一設備中以處理一 基材,該設備包括一承盤、一置於該承盤中之可滲透盤, 該研磨物或製造物係置於該可滲透盤上、一置於該位於該 可渗透盤及該承盤底部間之承盤内的電極,以及一製程期 間適用於維持該基材之研磨頭。 7 200520893 於另一態樣中,該等研磨物可 丨頌初U —用於處理一 方法作為一導電研磨物,該 , + π I 方法包括提供一含有一圍封物 之設備;將一導電研磨物 固7初 ,._ ν 於該圍封物中;以一近約2( 加奋/每分(GPM)的流率提供一 —, 導電,合液至該圍封物;將該 基材疋位於該導電溶液中鄰近 那近該導電研磨物處;將該基材 之一表面於導電溶液中接觸該 偷 等電研磨物;於一電極及該 導電研磨物間施予一偏壓;以另款队 — 至,以及移除該基材表面之至少一 部份表面。In another aspect, an abrasive is provided for treating the surface of a substrate, such as a conductive layer deposited on the substrate. The abrasive article includes a body 'having at least a plurality of fiber portions coated with a conductive material, a plurality of conductive fillers, or a combination thereof, and is suitable for grinding such substrates. Several holes and several grooves can be formed on the abrasive to facilitate the flow of material therethrough. In yet another aspect, the abrasives can be placed in a device to process a substrate, the device including a tray, a permeable tray placed in the tray, the abrasive or manufactured article set An electrode on the permeable disc, an electrode placed in the susceptor located between the permeable disc and the bottom of the susceptor, and a grinding head suitable for maintaining the substrate during a process. 7 200520893 In another aspect, the abrasives can be used to treat a method as a conductive abrasive. The + π I method includes providing a device containing an enclosure; The abrasive is solid at the beginning of the year, ._ ν is in the enclosure; at a flow rate of approximately 2 (Gas per minute per minute (GPM)), a-, conductive, hydration to the enclosure; the base The material is located near the conductive abrasive in the conductive solution; one surface of the substrate is in contact with the electric abrasive in the conductive solution; a bias voltage is applied between an electrode and the conductive abrasive; With another team-to, and to remove at least a part of the surface of the substrate surface.

一用於處理一基材之研磨 ^ 電支揮層(support layer) 暴露表面,適於研磨' 於本發明之另一實施例中, 物至少包括一插入層,連接於一 及一導電層之間。該導電層具有 基材。該支撐層之硬度小於導電@,且該插入層之硬度大 於該支樓層。An abrasive surface for processing a substrate ^ an exposed surface of a support layer is suitable for abrasive 'In another embodiment of the present invention, the object includes at least an interposer layer connected to one and one conductive layer. between. The conductive layer has a substrate. The hardness of the support layer is less than conductive @, and the hardness of the insertion layer is greater than that of the supporting floor.

於本發明之又一實施例中,一用於處理一基材之研磨 物至少包括一插入層’其連接至一導電層及一支撐層間。 該導電層係以至少一孔隙穿通,該插入層及支撐層包括一 形成於該導電層中之一第一孔洞,其直徑大於形成於該插 入層及該支撐層中之一第二孔洞的直徑。 【實施方式】 本文中所使用的字及詞應被給予熟悉此技藝者一般 習知的意義’除非它們被另外加以定義。化學機械研磨應 包括但並不侷限於藉由化學作用,機械作用,或化學與機 械做用的組合來研磨一基材表面。電研磨應包括,但I不 200520893 侷限於,藉由電化學作用的施加,如陽極分解,來將一基 材平坦化。 電化學機械研磨(ECMP)應包括,但並不侷限於,藉 由施加電化學作用,機械作用或電化學與機械作用兩者的 組合用以將物質從一基材表面上去除來將一基材平坦化。 電化學機械電鍍處理(ECMPP)應包括,但並不偈限 於,電化學地將物質沉積在一基材上且同時藉由電化學作 用,機械作用或電化學與機械作用兩者的組合的施加來將 被沉積的物質平坦化。 陽極分解應包括,但並不侷限於,直接或間接施加一 陽極偏壓至一基材其造成導電材質從一基材表面被去除掉 且跑到周圍的電解液中的結果。研磨表面係廣義的界定為 製造物的部分,其於製程期間係至少部分接觸一基材表 面,或電力將製造物耦接至一基材表面(無論是直接接觸或 透過一導電媒介而間接接觸)。 研磨設備 第1圖顯示一處理設備1〇〇其具有至少一適合電化學 沉積及化學機械研磨的站,如一電化學機械研磨(ECMp) 站102及至少一傳統的研磨站106其被設置在一單一的平 台或工具上。一種可受惠於本發明的研磨工具為由設在美 國加州Santa Clara市的Applied Materials公司所製造的 MIRRA®化學機械研磨機。In still another embodiment of the present invention, an abrasive for treating a substrate includes at least an interposer layer 'which is connected between a conductive layer and a support layer. The conductive layer is penetrated by at least one pore. The insertion layer and the support layer include a first hole formed in the conductive layer, the diameter of which is larger than the diameter of a second hole formed in the insertion layer and the support layer. . [Embodiment] The words and words used herein should be given meanings generally used by those skilled in the art 'unless they are otherwise defined. Chemical mechanical polishing should include, but is not limited to, polishing the surface of a substrate by chemical action, mechanical action, or a combination of chemical and mechanical actions. Electromilling should include, but not limited to, 200520893. It is limited to the planarization of a substrate by the application of electrochemical action, such as anode decomposition. Electrochemical mechanical polishing (ECMP) should include, but is not limited to, the application of electrochemical action, mechanical action, or a combination of electrochemical and mechanical action to remove a substance from the surface of a substrate to remove a substrate.材 FLAT. Electrochemical mechanical plating (ECMPP) should include, but is not limited to, electrochemically depositing a substance on a substrate and simultaneously applying by electrochemical action, mechanical action, or a combination of both electrochemical and mechanical action To flatten the deposited material. Anodic decomposition should include, but is not limited to, the result of directly or indirectly applying an anodic bias to a substrate which causes conductive materials to be removed from the surface of a substrate and run into the surrounding electrolyte. The abrasive surface is broadly defined as the part of the manufactured article that is at least partially in contact with a substrate surface during the manufacturing process, or electrically couples the manufactured article to a substrate surface (either directly or indirectly through a conductive medium) ). Grinding equipment FIG. 1 shows a processing equipment 100 having at least one station suitable for electrochemical deposition and chemical mechanical polishing, such as an electrochemical mechanical polishing (ECMp) station 102 and at least one conventional polishing station 106 which are arranged in a On a single platform or tool. One abrasive tool that can benefit from the present invention is a MIRRA® chemical mechanical abrasive grinder manufactured by Applied Materials, Inc. of Santa Clara, California.

第1圖中該舉例性的設備100大體上包括兩個ECMP 200520893 站102以及一研磨站1()6。該等站台可用於處理一基材表 面。例如,一具有特徵定義形成其上並以一阻障層填充且 接者以導電材料置於該阻障層上之基材’其可以兩個 ECMP站1〇2中的兩個步驟移除導電材料,藉由研磨站1〇6 移除該阻障層以形成一平坦化表面。 該舉例性的設備1 〇 〇大體上包括一基j 1 0 8其支撐一 或多個ECMP站102,一或多個研磨站106,一輸送站u〇 及一轉塔112。該輸送站110藉由裝載機械臂116將基材 114來回地輸送至該設備1〇〇。該裝載機械臂11(5典型地將 基材114輸送於輸送站H〇與一工廠介面120之間,該工 廠介面包括一清潔模組122,一度量裝置104及一或多個 基材貯存匣118。該度量裝置104的一個例子為由設在美 國亞歷桑那州鳳凰城的Nova Measuring Instruments公司 所製造的 NovaScamTM Integrated Thickness Monitoring system。 或者,該裝載機械臂116(或工廠介面120)可將基材輸 送至一或多個其它處理工具(未示出),如一化學氣相沉積 工具’物理氣相沉積工具,蝕刻工具及類此者。 在一實施例中,該輸送站110包含至少一輸入缓衝站 124 ’ 一輸出緩衝站126,一輸送機械臂132,及一裝載杯 1且件128。該裝載機械臂116將基材114置於該輸入緩衝 站124上。該輸送機械臂132具有兩個抓持器組件,每一 、組件都具有一氣動抓持器指件抓住基材的邊緣。該輸送機 械臂132將基材114從該輸入緩衝站124舉起並旋轉該抓 10 200520893 持益及基材1 1 4用以將基材1 1 4移到該裝載杯組件1 2 8之 上,然後將基材11 4放下至該裝載杯組件1 2 8上。 該轉塔112支撲多個研磨頭130,每一研磨頭在處理 期間都裝著一基材114。該轉塔112將由磨頭130輸送於 該輸送站110,該一或多個ECMP站1〇2及該一或多個研 磨站1 0 6之間。一種可受惠於本發明_的轉塔11 2被揭示於 1 998年九月8日授予Tolies等人的美國專利第5,804,507 號中,該案藉由此參照而被併於本文中。 通常,該轉塔112被設置在該基座1〇8的中央。該轉 塔112典型地包括多個臂138。每一臂138大體上支撐一 研磨頭1 3 0。第1圖中有一臂13 8沒有被示出用以能夠清 楚地看到輸送站11 〇。轉塔11 2是可標記的,使得研磨頭 130可依據使用者所界定的順序被移動於站1〇2,106及輸 送站11 0之間。 通常,當基材114被設置在該ECMP站102或研磨站 106中時,研磨頭130收納該基材114。在設備1〇〇上之該 ECMP站102與研磨站106的配置讓基材1 14能夠在被保 持在同一研磨頭130中的同時藉由將基材移動於站與站之 間而被依序地被電鍍或研磨。一種可被使用於本發明中的 研磨頭為由設在美國加州 Santa Clara 市的 Applied Materials公司所製造的TITAN HEAD™基材載具。 可使用在本文中所描述的研磨設備1 0〇中的研磨頭 130的例子被描述於2000年二月25曰授予S hen don等人 的美國專利第6,024,630號中,該案藉由此參照而被併於 200520893 本文中。 為了要方便控制該研磨設備100及在其上所實施的處 理,一包含了中央處理單元(CPU)142,記憶體144,及支 援電路146的控制器140被連接至研磨設備1〇〇。該 CPU142可以是能夠被使用於工業設施中用來控制不同的 裝置及壓力的任何一種形式的-電腦處理器。記憶體M4被 連接至該CPU142。記憶體144或電腦可讀取媒體,可以 是一或多種市場上可獲得的記憶體如動態存取記憶體 (RAM),惟讀記憶體(ROM),軟碟,硬碟,或其它行式的 數位貯存’本地的或遠端的。支援電路146被連接至 CPU142用來以傳統的方式支援該處理器。這些電路包括 快取,電源供應,時脈電路,輸入/輸出電路,子系統,及 類此者。 用於操作該研磨設備100及/或控制器14〇之電源係 由一電源供應器150所提供。闡示性來說,所示之該電源 供應器150係連接至該研磨設備100之多個元件,包括該 輸送站11〇、該工廠介面12〇、該裝载機械臂116以及該控 制器14〇。於該等實施例中,不同電%係供應至該研磨: 備100之兩個或多個元件。 上方的研磨頭130 第2圖顯示被支撐於一 ECMP站1〇2 的剖面圖。該ECMP站102大體上包括一承盤2〇2 蓋子208。在一實施 1〇〇的基座108上。 ’一導電流體如一電The exemplary apparatus 100 in FIG. 1 generally includes two ECMP 200520893 stations 102 and a polishing station 1 () 6. These stations can be used to treat a substrate surface. For example, a substrate having a characteristic definition formed thereon and filled with a barrier layer and then placed on the barrier layer with a conductive material, which can remove conductivity in two steps in two ECMP stations 102 Material, the barrier layer is removed by a polishing station 106 to form a planarized surface. The exemplary apparatus 100 generally includes a base j 108 that supports one or more ECMP stations 102, one or more grinding stations 106, a transfer station u0, and a turret 112. The transfer station 110 transfers the substrate 114 back and forth to the apparatus 100 by a loading robot 116. The loading robot arm 11 (5 typically transports the substrate 114 between the transfer station H0 and a factory interface 120, which includes a cleaning module 122, a measuring device 104, and one or more substrate storage boxes 118. An example of the measuring device 104 is a NovaScamTM Integrated Thickness Monitoring system manufactured by Nova Measuring Instruments, Inc., located in Phoenix, Arizona, USA. Alternatively, the loading robot 116 (or the factory interface 120) may The material is transferred to one or more other processing tools (not shown), such as a chemical vapor deposition tool, a physical vapor deposition tool, an etching tool, and the like. In one embodiment, the transfer station 110 includes at least one input Buffer station 124 'An output buffer station 126, a transfer robot arm 132, and a loading cup 1 and piece 128. The loading robot arm 116 places a substrate 114 on the input buffer station 124. The transfer robot arm 132 has Each of the two gripper assemblies has a pneumatic gripper finger to grip the edge of the substrate. The transport robot arm 132 lifts the substrate 114 from the input buffer station 124 and rotates the substrate Grab 10 200520893 Jiyi and the substrate 1 1 4 is used to move the substrate 1 1 4 onto the loading cup assembly 1 2 8 and then lower the substrate 11 4 onto the loading cup assembly 1 2 8. This rotation The tower 112 supports a plurality of grinding heads 130, and each grinding head is loaded with a substrate 114 during processing. The turret 112 will be conveyed by the grinding head 130 to the conveying station 110 and the one or more ECMP stations 102 And the one or more grinding stations 106. A turret 11 2 that can benefit from the present invention is disclosed in US Patent No. 5,804,507, issued to Tolies et al. On September 8, 1998, which The case is incorporated herein by reference. Generally, the turret 112 is disposed in the center of the base 108. The turret 112 typically includes a plurality of arms 138. Each arm 138 generally supports a Grinding head 1 3 0. An arm 13 8 is not shown in the first figure to clearly see the conveying station 11 0. The turret 11 2 is markable, so that the grinding head 130 can be defined by the user. The sequence is moved between the stations 102, 106 and the conveying station 110. Generally, when the substrate 114 is set in the ECMP station 102 or the polishing station 106, the polishing head 130 The substrate 114 is received. The configuration of the ECMP station 102 and the polishing station 106 on the device 100 allows the substrate 1 14 to be held in the same polishing head 130 by moving the substrate to the station and the station. They are sequentially electroplated or ground. One type of grinding head that can be used in the present invention is a TITAN HEAD ™ substrate carrier manufactured by Applied Materials, Inc. of Santa Clara, California. An example of a grinding head 130 that can be used in the grinding apparatus 100 described herein is described in U.S. Patent No. 6,024,630, issued to Shen Don et al. On February 25, 2000, which is hereby incorporated by reference Incorporated in 200520893 article. In order to conveniently control the grinding apparatus 100 and the processing performed thereon, a controller 140 including a central processing unit (CPU) 142, a memory 144, and a support circuit 146 is connected to the grinding apparatus 100. The CPU 142 may be any type of computer processor that can be used in industrial facilities to control different devices and pressures. The memory M4 is connected to the CPU 142. Memory 144 or computer-readable media, which can be one or more commercially available memories such as dynamic access memory (RAM), read-only memory (ROM), floppy disks, hard disks, or other lines Digital storage 'local or remote. A support circuit 146 is connected to the CPU 142 to support the processor in a conventional manner. These circuits include caches, power supplies, clock circuits, input / output circuits, subsystems, and the like. The power for operating the grinding apparatus 100 and / or the controller 14 is provided by a power supply 150. Illustratively, the power supply 150 shown is connected to multiple components of the grinding equipment 100, including the transfer station 110, the factory interface 120, the loading robot arm 116, and the controller 14 〇. In these embodiments, different electrical percentages are supplied to the grinding: two or more components of 100 are prepared. The upper grinding head 130. Figure 2 shows a cross-section view of an ECMP station 102 supported. The ECMP station 102 generally includes a tray 202 cover 208. On a base 108 that implements 100. ‘A conductive fluid such as an electric

極204,研磨物205,一圓盤206及一 例中,該承盤2 0 2被耦合至該研磨設備 承盤202大體上界定一容器或電解槽 12 200520893 解液220被裝承於其内。被用來處理該基材114的電解液 220可包括金屬,如銅’紹’鶴’金’銀或可被沉積在基 材114上或電化學地從基材114上去除掉的其它物質。The pole 204, the abrasive 205, a disc 206, and in one example, the carrier 202 is coupled to the grinding equipment. The carrier 202 generally defines a container or electrolytic cell 12 200520893 and a solution 220 is contained therein. The electrolyte 220 used to process the substrate 114 may include a metal, such as copper " shor " gold " silver, or other materials that may be deposited on or removed from the substrate 114 electrochemically.

承盤202可以是由一塑膠如含氟聚合物,TELFON, PFA,PE,PES,或可以與電鍍或電研磨化學物相容的其它 物質所製成的碗形件。多承盤202具有一底部210其包括 一孔216及一排水道214。孔216被設置在該底部210的 中心以允許一軸2 1 2由其間通過。一密封件2 1 8被設置在 該孔216與該軸212之間並允許軸212轉動,同時可防止 在承盤202内的流體從孔2 1 6流出。 承盤202典型地包括該電極204,該圓盤206,及該設 置於其内的研磨物205。研磨物205,如一研磨墊,被設置 及支撐在該承盤202内的圓盤206上。The holder 202 may be a bowl-shaped member made of a plastic such as a fluoropolymer, TELFON, PFA, PE, PES, or other substances that are compatible with electroplating or electromilling chemicals. The multiple tray 202 has a bottom 210 including a hole 216 and a drainage channel 214. A hole 216 is provided in the center of the bottom 210 to allow a shaft 2 1 2 to pass therethrough. A seal 2 1 8 is provided between the hole 216 and the shaft 212 and allows the shaft 212 to rotate while preventing the fluid in the holder 202 from flowing out of the hole 2 1 6. The holder 202 typically includes the electrode 204, the disk 206, and the abrasive article 205 disposed therein. An abrasive object 205, such as a polishing pad, is disposed and supported on a disc 206 in the holder 202.

電極204為一為基材114及/或與一基材表面接觸的研 磨物205的相對電極。該研磨物2〇5是至少部分導電的且 在電化學處理期間,如一包括了電化學沉積及化學機械研 磨’或電化學分解之電化學機械電鍍處理(ECMPP),可與 基材一起作為一電極。電極204可以是一陽極或陰極,端 視施加於電極204與研磨物205之間的是正偏壓(陽極)或 負偏壓(陰極)而定。 例如’在將物質從一電解液中沉積至該基材表面上的 處理中’電極204是作為一陽極及基材表面及/或研磨物 205則是作為一陰極。當要將物質從一基材表面上去除 掉,如藉由施加偏壓而分解,電極2〇4是作為一陰極而基 13 200520893 材表面及/或研磨物205則是作為該分解處理中的陽極。 電極204被设置在該圓盤2〇6與該承盤2〇2的底部21〇 之間且浸泡在電解液220中。電極2〇4可以是一板狀件, 一其上形成有多個孔的板子,或多個被設置在一可滲透膜 或谷器内的電極件。一可滲透膜(未示出)可被設置在該圓 盤206與電極2〇ί之間或電極204與研磨物205之間用以 將氣泡’如氫氣泡’從水面濾除掉並減少缺陷形成且更加 均勻地施加電流或電力於它們之間。 電極204是由將被沉積或去除的物質所製成,如銅, 鋁,金,銀,鎢及其它可被電化學地沉積於基材114上的 物質。對於電化學去除處理而言,如陽極分解,電極2 0 4 包括一除了將被沉積的物質之外的一不可消耗的電極,如 用於銅分解之不鐘鋼、翻、碳或紹。 第18圖係描述一電極204之一實施例的平面圖,該 電極具有數個可獨立電偏壓之區域。該等區域有助於控制 電流通過該處理槽之橫向寬度,以控制通過該基材直徑之 移除材料(或沉積)。於第1 8圖所示之實施例中,該電極 204包括三個共中心區域1902、1904、1906,其係藉由一 電源1910而獨立偏壓。該等區域I902、I904、可藉 一介電間距物而分隔。雖然第圖所示之該等區域1902、 1 9 0 4、1 9 0 6係配置呈共中心環狀’但該等區域也可替換配 置,例如一徑向配置、扇形配置、弧狀配置、格狀配置、 條狀配置、島狀配置以及楔形配置之一者。 研磨物205可以是一可與流體環境及處理規袼相容的 14 200520893The electrode 204 is a counter electrode that is the substrate 114 and / or the abrasive 205 that is in contact with the surface of the substrate. The abrasive article 200 is at least partially conductive and during electrochemical processing, such as an electrochemical mechanical plating process (ECMPP) including electrochemical deposition and chemical mechanical polishing 'or electrochemical decomposition, can be used together with the substrate as a electrode. The electrode 204 may be an anode or a cathode, depending on whether a positive bias (anode) or a negative bias (cathode) is applied between the electrode 204 and the abrasive 205. For example, in the process of "depositing a substance from an electrolyte onto the surface of the substrate", the electrode 204 acts as an anode and the surface of the substrate and / or the abrasive 205 acts as a cathode. When the substance is to be removed from the surface of a substrate, if it is decomposed by applying a bias voltage, the electrode 204 is used as a cathode and the surface of the material and / or the abrasive material 205 is used as the decomposition treatment. anode. The electrode 204 is disposed between the disk 206 and the bottom 21 of the support plate 202 and is immersed in the electrolyte 220. The electrode 204 may be a plate-like member, a plate having a plurality of holes formed therein, or a plurality of electrode members provided in a permeable membrane or a trough. A permeable membrane (not shown) can be placed between the disc 206 and the electrode 20 or between the electrode 204 and the abrasive 205 to filter out bubbles such as hydrogen bubbles from the water surface and reduce defects. Form and apply current or power more uniformly between them. The electrode 204 is made of a substance to be deposited or removed, such as copper, aluminum, gold, silver, tungsten, and other substances that can be electrochemically deposited on the substrate 114. For electrochemical removal processes, such as anodic decomposition, the electrode 204 includes a non-consumable electrode other than the material to be deposited, such as brass, carbon, or carbon for copper decomposition. Fig. 18 is a plan view illustrating one embodiment of an electrode 204 having a plurality of regions which can be independently electrically biased. These areas help control the lateral width of the current through the processing tank to control the removal of material (or deposition) through the diameter of the substrate. In the embodiment shown in FIG. 18, the electrode 204 includes three concentric regions 1902, 1904, 1906, which are independently biased by a power source 1910. The areas I902 and I904 may be separated by a dielectric spacer. Although the areas 1902, 1904, and 1906 are shown in the figure as having a concentric ring configuration, these areas can also be replaced, such as a radial configuration, a fan configuration, an arc configuration, One of grid configuration, strip configuration, island configuration, and wedge configuration. Abrasive 205 can be a fluid environment and processing regulations compatible 14 200520893

物質墊、網或帶子。在第2圖所示的實施例中,研磨物2〇5 為圓形的且被置於該承盤202的上端,其下表面被該圓盤 206所支撐。該研磨物205包括一導電材質的至少一部分 導電表面’如一或多個導電元件,用來在處理期間與基材 表面接觸。研磨物205可以是一導電研磨物質或被沉積在 一傳統的研_磨物質上的導電研磨物質的合成物。例如,該 導電材質可被沉積在一位在該圓盤2〇6與該研磨物205之 間的支樓物質用以在處理期間配合研磨物2 〇 5的相容性 及/或硬度計。Material cushion, net or strap. In the embodiment shown in FIG. 2, the abrasive material 205 is circular and is placed on the upper end of the support plate 202, and the lower surface is supported by the disk 206. The abrasive 205 includes at least a portion of a conductive material, such as one or more conductive elements, for contacting the surface of the substrate during processing. The abrasive 205 may be a conductive abrasive material or a composite of a conductive abrasive material deposited on a conventional abrasive material. For example, the conductive material can be deposited on a branch material between the disc 206 and the abrasive 205 to fit the abrasive and the hardness and / or hardness tester during processing.

承盤202,蓋子208,及圓盤206係可活動地設置在基 座108上。承盤202,蓋子208及圓盤206可被軸向地朝 向基座108移動用以在轉塔112標示基材介於該ECMP與 研磨站102,106之間時提供研磨頭13〇的餘裕圓盤2〇6 被設置在承盤202中且被耦合至軸212。軸212大致上被 耦合至一設在該基座108底下的馬達221馬達224以一 預定的速度轉動該圓盤2 06以回應來自於控制器14〇的一 訊號。 圓盤206可以是一穿孔的支樓物其是由一可與電解液 220相容且不對研磨造成不良影響的物質所製成。圓盤206 可用一聚合物如含氟聚合物,PE,TELF〇n,PFA,PES, HDPE,UHMW或類此者,製成。圓盤206可利用固定件, 如螺絲,或其它機構與外殼壓嵌,而被固定在承盤202中。 圓盤206最妤是與該電極204間隔開用以提供一較寬的處 理窗口,因此降低沉積物質及去除物質對於電極204的尺 15 200520893 寸的敏感性。 圓盤206對於電解液22〇大致上是可滲透 施例中,圓盤9 ^ 206包括多個穿孔或通道222形 穿孔包括孔、 孔洞、開口或者部份或完全穿通 如研磨物)之诵 而〜l 道。穿孔的大小及密度被加以選摆 圓盤206提供仏a 、 - z、力勻的分布於該基材114上。 — 在圓盤2〇6的一態樣中,其包括具有直徑介 央吋(〇.5公釐)至約〇·4英吋(10公釐)的穿孔。穿 ;丨於約研磨物的3 0 %至約8 0 %之間。5 0 %的穿孔 供的電解液流對於研磨處理的不良影響是最小的 圓盤206的穿孔與研磨物205是對齊的用以提供 解液質量流穿過圓盤206及研磨物205到達基材 磨物20 5可用機械夾或導電黏劑而被置於該圓盤 雖然以下的研磨物被描述使用在一電化學 (ECMP)處理中,但本發明亦可在使用導電研磨物 及了電化學反應的製程中實施。此等使用電化學 程的例子包括了電化學沉積其涉及了研磨物2 〇 5 不需使用傳統的偏壓施加設備下施加一均勻的偏 材表面上用以沉積一導電材質,及電化學機械 (ECMPP)其包括電化學沉積及化學機械研磨的組# 在操作時,研磨物205被設置在該承盤202 液中的圓盤206上。在該研磨頭上的一基材114 電解液中且與研磨物205相接觸。電解液流經圓 研磨物205上的穿孔且藉由溝槽而被分布於基材 的。在一實 •於其上。 該物件(例 用以經由 於約0.02 孔的密度 密度可提 。通常, 足夠的電 表面。研 206 上 〇 機械研磨 的其它涉 作用的製 被用來在 壓至一基 電鍍處理 内的電解 被置於該 盤206及 表面上。 200520893 來自於一電源的電力然後被施加於該導電研磨物205及·電 極204上,且在電解液中的導電材質,如銅,則藉由前述 之一陽極分解的方法被移走。The support plate 202, the cover 208, and the disc 206 are movably disposed on the base 108. The support plate 202, the cover 208, and the disk 206 can be moved axially toward the base 108 to provide a margin of 13 for the grinding head 13 when the turret 112 indicates that the substrate is between the ECMP and the grinding stations 102, 106. A disk 206 is disposed in the carrier 202 and is coupled to the shaft 212. The shaft 212 is substantially coupled to a motor 221 provided under the base 108. The motor 224 rotates the disk 2006 at a predetermined speed in response to a signal from the controller 14o. The disc 206 may be a perforated supporting structure made of a substance that is compatible with the electrolyte 220 and does not adversely affect grinding. The disc 206 can be made of a polymer such as a fluoropolymer, PE, TELFon, PFA, PES, HDPE, UHMW, or the like. The disc 206 may be fixed in the receiving plate 202 by using a fixing member, such as a screw, or other mechanisms, to be pressed into the housing. The disk 206 is spaced apart from the electrode 204 to provide a wider processing window, thereby reducing the sensitivity of the deposited material and removed material to the size of the electrode 204. The disc 206 is substantially permeable to the electrolyte 22. In the embodiment, the disc 9 ^ 206 includes a plurality of perforations or channels. The 222-shaped perforation includes holes, holes, openings, or partial or complete penetration (such as an abrasive). ~ L way. The size and density of the perforations are selected. The disk 206 provides 仏 a, -z, and the force is evenly distributed on the substrate 114. — In one aspect of the disk 206, it includes a perforation having a central diameter (0.5 mm) to about 0.4 inches (10 mm) in diameter. Wear; between about 30% to about 80% of the abrasive. The electrolyte flow of 50% perforation has the least adverse effect on the grinding process. The perforation of the disc 206 is aligned with the abrasive 205 to provide a solution mass flow through the disc 206 and the abrasive 205 to the substrate. The abrasive article 20 5 can be placed on the disc using a mechanical clip or a conductive adhesive. Although the following abrasive article is described as being used in an electrochemical (ECMP) process, the present invention can also be used with conductive abrasive articles and electrochemical It is carried out in the process of the reaction. Examples of such electrochemical processes include electrochemical deposition, which involves the grinding of an abrasive material, and the application of a uniform polarizing material to deposit a conductive material without the use of a conventional bias application device, and electrochemical machinery. (ECMPP) It includes a group of electrochemical deposition and chemical mechanical polishing. In operation, the abrasive 205 is set on the disk 206 in the liquid of the holder 202. A substrate 114 on the polishing head is in the electrolyte and is in contact with the polishing object 205. The electrolyte flows through the perforations in the circular abrasive 205 and is distributed on the substrate through the grooves. On a real • on it. The object (for example, can be improved by a density of about 0.02 holes. Generally, sufficient electrical surface. Other mechanical effects of mechanical grinding are used in electrolytic coatings pressed into a base plating process. It is placed on the plate 206 and the surface. 200520893 Electric power from a power source is then applied to the conductive abrasive 205 and the electrode 204, and the conductive material in the electrolyte, such as copper, is passed through one of the foregoing anodes. The decomposition method was removed.

該電解液220係由一容器233經由一喷嘴270流向一 容積232。該電解液220係藉由多個設置在裙部254上的 孔1 3 4而被防止溢流於該處理區2 3 2上。孔2 3 4大致上提 供一穿過蓋子208的路徑以供電解液220離開處理區232 並流入承盤202的下部。孔234大致上位在凹陷258的一 下表面與中央部分252之間。因為至少一部分的孔234典 型地高於在處理位置之基材丨丨4的表面,所以電解液220 會填充該處理區232因而讓研磨物205與基材相接觸。因 此,基材114經由蓋子208與圓盤206之間的一完整的相 對間距範圍而與電解液220相接觸。The electrolyte 220 flows from a container 233 to a volume 232 through a nozzle 270. The electrolyte 220 is prevented from overflowing to the processing area 2 3 2 through a plurality of holes 1 3 4 provided in the skirt portion 254. The holes 2 3 4 generally provide a path through the cover 208 for the electrolyte 220 to leave the processing area 232 and flow into the lower portion of the tray 202. The hole 234 is located approximately between a lower surface of the depression 258 and the central portion 252. Since at least a portion of the holes 234 are typically higher than the surface of the substrate 4 at the processing location, the electrolyte 220 will fill the processing area 232 and contact the abrasive 205 with the substrate. Therefore, the substrate 114 is in contact with the electrolyte 220 via a complete range of relative distances between the cover 208 and the disk 206.

被收集在承盤202内的電解液220大體上流經位在該 底部2 1 0上的排水口 2 1 4進入到流體輸送系統2 7 2。該流 體輸送系統272典型地包括一容器233及一幫浦242。流 入該流體輸送系統272中的該電解液220被收集在該容器 233中。幫浦242將電解液220從容器23 3傳送通過一供 應管244到達喷嘴270,電解液220在該處被回收通過該 ECMP站102。一過濾器240被設置在該容器233與該喷 嘴2 70之間用以去除掉可能存在於該電解液220中之顆粒 與積聚的物質。 電解溶液可包括市面上可購得的電解液。例如’在去 除含銅的物質上,該電解液可包括硫酸基的電解液或磷酸 17 200520893 基的電解液,如磷酸鉀(K3P04),或或它們的組合。該電 解液亦可包含硫酸基的電解液的衍生物,如硫酸銅,及鱗 酸基電解液的衍生物,如鱗酸銅。具有高氯酸-醋酸容液及 其衍生物的電解液亦可被使用。 、 此外,本發明可使用傳統上使用在電鍍或電研磨添加 物中的電解液成分(如增亮劑)來實施。電解液的一個來源 為總部設在美國賓州費城的Rohm and Hass公司的一個+ 公司Shipley Leonel所生產商品名為Ultrafill 2000的電解 液。合適電解液組成的例示係描述於2002年1月3日所巾 % 請之美國專利申請序號第1 0/03 8,066號,其全文係合併於 此以供參考。 電解液係被提供至電化學槽以於基材表面上提供_ 動態流率,或以一近約20加崙每分(GPM)之流率,例如借 約0.5GPM及約20GPM(例如約2GPM),提供至該基材表面 及一電極之間。吾人相信上述電解液流率已足以由基材表 面排空研磨物質以及化學副產物,並重新補充電解質以改 善研磨率。 馨 當於研磨製程中使用機械磨蝕(mechanical abrasion) 時’該基材11 4及研磨物205係彼此相對旋轉以將物質由 基材表面移除。機械磨蝕可藉由物理接觸導電研磨物及傳 統研磨材料的方式進行。基材11 4及研磨物2 0 5係分別以 · 約5 rP m或更高的轉速旋轉,例如介約1 0rp m及約5 0rpm 之間。 於一實施例中,可使用高轉速研磨製程。該高轉速製 18 200520893 程包括以一約1 50rpm或更高之平台轉速(例如介約1 50rpm 及約75 Orpm)旋轉該研磨物205;且該基材U4可以一介約 150rpm及約500rpm之轉速(例如介約300rpm及約50〇rpm) 作旋轉。進一步有關使用研磨物、製程以及此處所述設備 之高轉速研磨製程的描述係揭示於美國專利申請序號第 60/308,330 號,標題為「Method and Apparatus for ChemicalThe electrolytic solution 220 collected in the tray 202 generally flows through the drain port 2 1 4 on the bottom 2 10 and enters the fluid delivery system 2 7 2. The fluid delivery system 272 typically includes a container 233 and a pump 242. The electrolytic solution 220 flowing into the fluid delivery system 272 is collected in the container 233. Pump 242 transfers electrolyte 220 from container 23 3 through a supply tube 244 to nozzle 270, where electrolyte 220 is recovered through the ECMP station 102. A filter 240 is disposed between the container 233 and the nozzle 2 70 to remove particles and accumulated substances that may be present in the electrolytic solution 220. The electrolytic solution may include a commercially available electrolytic solution. For example, on removing copper-containing substances, the electrolyte may include a sulfuric acid-based electrolyte or a phosphoric acid-based 17 200520893-based electrolyte, such as potassium phosphate (K3P04), or a combination thereof. The electrolytic solution may also include a derivative of a sulfuric acid-based electrolytic solution, such as copper sulfate, and a derivative of a phosphonic acid-based electrolytic solution, such as copper phosphonate. Electrolytes having a perchloric acid-acetic acid solution and derivatives thereof can also be used. In addition, the present invention can be implemented using electrolyte components (such as brighteners) traditionally used in electroplating or electromilling additives. One source of the electrolyte is Ultrafill 2000, an electrolyte produced by Shipley Leonel, a + company of Rohm and Hass, based in Philadelphia, PA, USA. An example of a suitable electrolyte composition is described in US Patent Application No. 10/03 8,066, filed January 3, 2002, the entire contents of which are incorporated herein by reference. The electrolyte is provided to the electrochemical cell to provide a dynamic flow rate on the substrate surface, or at a flow rate of approximately 20 gallons per minute (GPM), such as approximately 0.5 GPM and approximately 20 GPM (eg, approximately 2 GPM) Provided between the surface of the substrate and an electrode. I believe that the above electrolyte flow rate is sufficient to empty the abrasive material and chemical by-products from the surface of the substrate, and replenish the electrolyte to improve the polishing rate. Xin When mechanical abrasion is used in the grinding process, the substrate 11 4 and the abrasive 205 are rotated relative to each other to remove substances from the surface of the substrate. Mechanical abrasion can be performed by physical contact with conductive abrasives and traditional abrasive materials. The substrate 11 4 and the abrasive 2 05 are respectively rotated at a rotation speed of about 5 rP m or higher, for example, between about 10 rp m and about 50 rpm. In one embodiment, a high-speed grinding process can be used. The high-speed system 18 200520893 includes rotating the abrasive 205 at a platform speed of about 150 rpm or higher (for example, about 150 rpm and about 75 Orpm); and the substrate U4 can rotate at about 150 rpm and about 500 rpm (For example, about 300 rpm and about 50 rpm). Further description of the high-speed grinding process using abrasives, processes, and equipment described herein is disclosed in U.S. Patent Application Serial No. 60 / 308,330, entitled "Method and Apparatus for Chemical

Mechanical Polishing of Semiconductor Substrate」其係於Mechanical Polishing of Semiconductor Substrate ''

2001年7月25日所申請。其他移動,包括執道移動或通 過該基材表面之彎曲移動等,也可於製程期間進行。 當接觸基材表面時,研磨物205及該基材表面間可施 加約6psi或更小的壓力,例如約2psi或更小。對於含有 低介電常數的物質之基材而言,於該基材的研磨期間被使 用在該基材114與該研磨物205之間的壓力可約為2psi或 更小。於一態樣中,一介約〇· lpsi及約〇.2psi之間的導電 研磨物壓力可用以研磨基材,如前文所述。Applied on July 25, 2001. Other movements, including movements or bending movements through the surface of the substrate, can also be performed during the manufacturing process. When contacting the substrate surface, a pressure of about 6 psi or less can be applied between the abrasive 205 and the surface of the substrate, such as about 2 psi or less. For a substrate containing a low dielectric constant substance, the pressure used between the substrate 114 and the abrasive article 205 during grinding of the substrate may be about 2 psi or less. In one aspect, a conductive abrasive pressure between about 0.1 psi and about 0.2 psi can be used to grind the substrate, as previously described.

在陽極分解中,電位差或偏壓係施加於該電極 2〇4(作為陰極)以及該研磨物205之研磨表面310間(作為 陽極)(參照第3圖)。與該研磨物接觸之基材係藉由該導電 研磨表面310進行研磨,同時該偏壓係施加於該導電物支 撐元件。該施加偏壓可移除導電物質,例如行程於基材表 面上的含銅材料。建立偏壓的方式可包括實施約伏特或 更低的電壓至基材表面。介約〇 · 1伏特及約1 〇伏特間的電 壓可用以將含銅材料由基材表面分解至電解液中。該偏壓 也可產生一介約〇·1 mA/cm2至約50 mA/cm2的電流密 19 200520893 度’或對於2 〇 〇公釐 安培的雷、的基材而言,介於約0.1安培襄約20 σ J ^ 流。 製程的2源I、應^ 1 5〇用以建立電位差並進行陽極分解 例如,1::取決於由基材表面移除材料的要求而變動。 物205。:著夺門改·變的陽極電位可被提供至該導電研磨 子脈播訊號亦可藉由電子脈衝調變技術來施加。該電 子脈衝調變技術包含 ,^ 施加一固定電流密度或電壓於該基材 上荷續一第^Jpl. p„ 又、3,然後施加一固定的反向電壓於該基 何上符續一第二段眸 、3,重復第一及第二步驟。例如,該 电卞脤衝調變技術 你石1 使用一從約-〇·1伏至約-15伏到約〇·1 伙至15伏之間的-可變電位。 a金德有關扠正該研磨媒介上之穿透圖案及密度,-般咸信 备與傳統的邊緣接觸銷 丄八* 月<較同的邊緣去除率及較低的中央 去除率相比較時,讓 土材相對於研磨物205形成偏壓可造 質如金屬,從基材表面均勻地分解至電解液中。 導電材質,如含銅物質’可以約1 5000埃/分鐘或稍 低:、如介於約⑽埃/分鐘至約15〇〇〇埃/分鐘,的速率從 ^一部分的基材表面上被去除掉。在本發明的一實施例 中、、中將被去除的銅物質小於12〇〇〇埃厚,電壓可被施 加至該導電研磨物205用以提供一介於1〇〇埃/分 8000埃/分鐘的去除率。 接下來的電研磨製程,該基材可進一步研磨或擦淨以 移除阻障層物質,由介電材料移除表面缺陷,< 利用、導電 研磨物改善研磨製程的平坦性。適當之擦淨製程及組成物 20 200520893 係揭示於2 0 0 〇年5月11曰所共同申請之美國專利申請序 號第09/569,968號中,其全文係合併於此以供參考。 研磨物材料 此處所述之研磨物材料可由導電材料形成,導電材料 至少包括一導電研磨材料或者包括一以介電或導電研磨材 料形成之導電兀件。於一實施例中,導電研磨材料可包括 數個導電纖維、導電填料或其結合物。該等導電纖維、導 電填料或其結合物可分佈於研磨材料中。 該等導電纖維可至少包括導電或介電材料(例如介電 或導電聚合物或碳基材料)、至少部分塗覆或覆蓋導電材料 者(包括金屬、碳基材料、導電陶瓷材料 '導電合金或其結 合者)。該等導電纖維可為纖維或細線、導電纖維或導電織 物、一或多個迴圈、線圈或導電纖維環等形式。多層導電 材料(例如多層導電織物或纖維)可用於形成導電研磨材In anodic decomposition, a potential difference or bias voltage is applied between the electrode 204 (as a cathode) and the polishing surface 310 of the abrasive 205 (as an anode) (see FIG. 3). The substrate in contact with the abrasive is polished by the conductive abrasive surface 310, while the bias is applied to the conductive support element. This bias can remove conductive materials, such as copper-containing materials that travel on the surface of the substrate. The means for establishing the bias may include applying a voltage of about volts or less to the surface of the substrate. A voltage between about 0.1 volts and about 10 volts can be used to decompose the copper-containing material from the surface of the substrate into the electrolyte. The bias voltage can also produce a current density between about 0.1 mA / cm2 and about 50 mA / cm2. 19 200520893 degrees' or about 0.1 ampere for a substrate of 2000 mm amps About 20 σ J ^ flow. The two sources I of the process should be used to establish a potential difference and perform anodic decomposition. For example, 1 :: varies depending on the requirements for removing material from the substrate surface.物 205。 205. : The anode potential that changes the gate can be provided to the conductive abrasive subpulse signal. It can also be applied by electronic pulse modulation technology. The electronic pulse modulation technique includes, ^ applying a fixed current density or voltage to the substrate for a period of ^ Jpl. P „, 3, and then applying a fixed reverse voltage to the base for continued one The second segment, 3, repeats the first and second steps. For example, the electric shock modulation technology you stone 1 uses a voltage from about -0.1 volts to about -15 volts to about 0.001 to 15 volts. -Variable potential. A Jinde is about to penetrate the grinding pattern and density on the grinding medium,-general letter and traditional edge contact pins 丄 August * the same edge removal rate and comparison In comparison with a low central removal rate, the earth material can be biased relative to the abrasive 205 to create materials such as metals, which can be uniformly decomposed from the surface of the substrate into the electrolyte. Conductive materials such as copper-containing substances can be about 1 5000 Angstroms / minute or slightly lower: such as between about ⑽angstroms / minute to about 15,000 angstroms / minute, the rate is removed from a part of the surface of the substrate. In an embodiment of the invention, The copper material to be removed is less than 12,000 angstroms thick, and a voltage may be applied to the conductive abrasive 205 to provide a Removal rate between 100 Angstroms per minute and 8000 Angstroms per minute. In the subsequent electro-grinding process, the substrate can be further ground or wiped to remove the barrier layer material, remove surface defects from the dielectric material, < The use of conductive abrasives to improve the flatness of the polishing process. Appropriate cleaning processes and compositions 20 200520893 are disclosed in US Patent Application Serial No. 09 / 569,968, commonly filed on May 11, 2000, The full text is incorporated herein by reference. Abrasive Material The abrasive material described herein may be formed of a conductive material, the conductive material including at least a conductive abrasive material or a conductive element formed of a dielectric or conductive abrasive material. In one embodiment, the conductive abrasive material may include several conductive fibers, conductive fillers, or combinations thereof. The conductive fibers, conductive fillers, or combinations thereof may be distributed in the abrasive material. The conductive fibers may include at least conductive or Dielectric materials (such as dielectric or conductive polymers or carbon-based materials), those that are at least partially coated or covered with conductive materials (including metals, carbon-based materials, conductive ceramic materials) 'Conductive alloy or a combination thereof.' These conductive fibers may be in the form of fibers or threads, conductive fibers or conductive fabrics, one or more loops, coils or conductive fiber loops, etc. Multi-layer conductive materials (such as multi-layer conductive fabrics or fibers ) Can be used to form conductive abrasives

導電纖維材料可包括本質上 :材料塗覆之介電或導電纖維 良維材料。合適之介電纖維材 如聚醯胺、聚亞氨、尼龍聚合 、聚乙烯、聚苯乙烯、聚碳酸 如 丙/乙烯/苯乙烯共聚物 結合物)等。本發明亦包括可 f料的使用。 本質上為導電的聚合物質,如 21 200520893 聚乙炔、固體聚合物導體(PEDT)其在市場上的商品名稱為 Baytorn™、聚苯胺、聚咯、 聚 吩 、 碳 其 物。導電聚合物的另一個例子為聚合物-貴金屬混合物質。 聚合物·貴金屬混合物質一般對於周圍的電解液是化 學上鈍態的,如具有可抗氧化的貴金屬❶聚合物-貴金屬複 合物質的一個例子為鉑-聚合物混合物質。導電研磨材料之 例示(包括導電纖維)已詳細揭示於目前申請中之美國專利 申請序號第1 0/033,732,其係於2001年12月27曰所申 請,標題為「Conductive Polishing Article F〇r Electrochemical Mechanical Polishing」,其全文係合併於 此以供參考。本發明也包括該等可作為纖維材料之有機或 無機材料的使用。 該纖維材料可為固體或自然中空者。該纖維長度範圍 介約Ιμηι至約1 000mm,且直徑介約〇 1μπι至約imm。於 —態樣中,對導電聚合複合物及泡沫材料而言(如沉積於聚 氧醋中的導電纖維),纖維直徑可介約5μπι至約2〇〇μιη, 長度之寬比對直徑約為5或更高,例如約丨〇或更高。該 纖維之截面區可為圓形、橢®、星形圖案、雪片狀或其他 任何形狀之加工介電質或導電纖維。具有長度介約5mm及 約1000mm間且直徑介約5μιη至約1〇〇〇μηι間之高深寬比 織維可用於形成導電纖維之網片 '迴圈、纖維或織物。該 等纖維也可具有範圍介約104psi及約1〇8psi之間的彈性係 =。然而,本發明應涵蓋任何彈性係數足以提供研磨物及 前述製程中平順、彈性纖維者。 22 200520893 沉積於該導電或介電纖維材料上之習知材料一般包 括導電無機化合物,諸如金屬、金屬合金、碳基材料、導 電陶究材料、金屬無機化合物或其結合物。可用於此處導 電材料塗層之金屬範例包括貴金屬、錫、鉛、銅、鎳、鈷 以及其組合物。貴金屬包括金、鉑、鈀、銥、銖、铑、釕、 鐵以及其組合物,其中又以金及鉑為佳。本發明除了前述 該等外,也涵蓋其他用於導電材料塗層之金屬的使用。碳 基材料包括炭黑、石墨以及可固定於纖維表面之碳粒子。 陶瓷材料之範例包括碳化鈮(NbC)、碳化锆(ZrC)、碳化钽 (TaC)、碳化鈦(TiC)、碳化鎢(wc)以及其組合物。本發明 除前述該等外’也涵蓋可用於導電材料塗層之其他金屬、 其他碳基材料以及其他陶瓷材料。金屬無機化合物包括如 沉積於聚合物纖維(如壓克力或尼龍纖維)上之硫化銅或稱 danjenite、Cu9S5。該 danjenite 塗覆纖維係 Thunder〇n®(商 標名)’其係由曰本NihonSanmoDyeing有限公司所上市。 該Thunderon⑧纖維一般具有一介約〇 〇3μιη及約〇々茁之 danjenite(Cu9S5)的塗層,且已發現具有約4〇Q/cm之導電 性。該導電塗層可藉由電鍍、塗覆、物理氣相沉積、化學 沉積、黏結或結合導電材料等方式直接沉積於該纖維上= 此外,亦可以成核、或晶種方式沉積導電材料 、 9 啊如鋼、 鈷或鎳等可用以改善該導電材料及纖維材料間的 部6、培性。 該導電材料可沉積在各個介電質或不同長度的 ^ 守"電纖維 上’以及沉積在由介電質或導電纖維材料製 1 π示種形壯 的迴圈、泡沫材料以及織物或纖維上。 23 200520893 合適之導電纖維範例係一以金塗覆之聚乙烯識維。其 餘合適之導電纖維範例包括鍍有金的丙稀酸纖維(壓克力 棉)以及塗覆姥的尼龍纖維。利用成核材料之導電纖維的範 例係以銅晶種層塗覆尼龍纖維’1將一金層沉積於該鋼層 上。Conductive fiber materials can include essentially dielectric or conductive fiber coated materials. Suitable dielectric fiber materials such as polyamide, polyimide, nylon polymerization, polyethylene, polystyrene, polycarbonate (such as propylene / ethylene / styrene copolymer combination) and the like. The invention also includes the use of fables. Polymer materials that are conductive in nature, such as 21 200520893 polyacetylene, solid polymer conductors (PEDT), whose trade names are Baytorn ™, polyaniline, polyrole, polyphene, carbon, and others. Another example of a conductive polymer is a polymer-precious metal mixed substance. The polymer-precious metal mixed substance is generally chemically passive to the surrounding electrolyte. For example, a polymer-precious metal compound having an oxidation-resistant precious metal ❶ polymer-precious metal compound is a platinum-polymer mixed substance. An example of a conductive abrasive material (including conductive fibers) has been disclosed in detail in US Patent Application Serial No. 10 / 033,732 in the current application, which was filed on December 27, 2001 and is entitled "Conductive Polishing Article F〇r Electrochemical" Mechanical Polishing ", the full text of which is incorporated herein for reference. The invention also includes the use of such organic or inorganic materials as fiber materials. The fibrous material may be solid or naturally hollow. The fiber length ranges from about 1 μm to about 1 000 mm, and the diameter ranges from about 0.01 μm to about 1 mm. In the aspect, for conductive polymer composites and foam materials (such as conductive fibers deposited in polyoxyacetate), the fiber diameter can range from about 5 μm to about 200 μm, and the length-to-width ratio to diameter is about 5 or higher, for example, about 0 or higher. The cross-sectional area of the fiber can be circular, elliptical, star-shaped, snowflake-like, or any other shape of processed dielectric or conductive fiber. High aspect ratios having a length between about 5 mm and about 1000 mm and a diameter between about 5 μm to about 10000 μm. Weaving fabrics can be used to form mesh 'loops, fibers, or fabrics of conductive fibers. These fibers may also have elastic systems ranging between about 104 psi and about 108 psi. However, the present invention should cover any elastic coefficient sufficient to provide abrasives and smooth, elastic fibers in the aforementioned processes. 22 200520893 Conventional materials deposited on this conductive or dielectric fiber material generally include conductive inorganic compounds such as metals, metal alloys, carbon-based materials, conductive ceramic materials, metal inorganic compounds, or combinations thereof. Examples of metals that can be used for the coating of conductive materials herein include precious metals, tin, lead, copper, nickel, cobalt, and combinations thereof. Precious metals include gold, platinum, palladium, iridium, baht, rhodium, ruthenium, iron, and combinations thereof, with gold and platinum being preferred. In addition to the foregoing, the invention encompasses the use of other metals for coating conductive materials. Carbon-based materials include carbon black, graphite, and carbon particles that can be fixed to the fiber surface. Examples of ceramic materials include niobium carbide (NbC), zirconium carbide (ZrC), tantalum carbide (TaC), titanium carbide (TiC), tungsten carbide (wc), and combinations thereof. In addition to the foregoing, the invention encompasses other metals, other carbon-based materials, and other ceramic materials that can be used for coating conductive materials. Metal inorganic compounds include, for example, copper sulfide or danjenite, Cu9S5 deposited on polymer fibers (such as acrylic or nylon fibers). This danjenite coated fiber is Thunderon® (trade name), which is marketed by Nihon SanmoDyeing Co., Ltd. The Thunderon (R) fiber generally has a coating of danjenite (Cu9S5) of about 0.30 μm and about 0%, and has been found to have a conductivity of about 40 Q / cm. The conductive coating can be directly deposited on the fiber by electroplating, coating, physical vapor deposition, chemical deposition, bonding or combining conductive materials, etc. In addition, the conductive material can also be deposited by nucleation or seeding, 9 Ah, steel, cobalt, or nickel can be used to improve the performance between the conductive material and the fiber material. The conductive material can be deposited on various dielectrics or electrical fibers of different lengths, and on 1 π-shaped loops made of dielectric or conductive fiber materials, foam materials, and fabrics or fibers. on. 23 200520893 An example of a suitable conductive fiber is a polyethylene coated with gold. Examples of other suitable conductive fibers include gold-plated acrylic fibers (acrylic cotton) and rayon-coated nylon fibers. An example of a conductive fiber using a nucleation material is a nylon seed layer coated with a copper seed layer and a gold layer is deposited on the steel layer.

該導電填料可包括碳基材料或導電粒子及纖維。導電 碳基材料之範例包括碳泡沫、碳纖維、碳奈米管、碳奈米 發泡體(carbon nonofoam),碳氣膠(carb〇n⑼⑺以丨)、石墨 以及其組合物。導電粒子或纖維之範例包括本質為導電性 之聚合物、介電質或以導電材料塗覆之導電粒子、塗有介 電填料材料之導電材料、導電無機粒子包括金屬粒子(如 金、鉑、錫、鉛以及其他金屬或金屬合金粒子)、導電陶曼 粒子以及其組合物。該導電填料可部份或完全以金屬(如貴 金屬)、碳基材料、導電陶究材料、金屬無機化合物或其社 合物(如前文所述)塗覆之。填充材料之範例係一碳纖維= 塗有銅或鎳之石墨。導電填料可為圓形、橢圓、具有特定The conductive filler may include carbon-based materials or conductive particles and fibers. Examples of the conductive carbon-based material include carbon foam, carbon fiber, carbon nanotube, carbon nonofoam, carbon aerosol, graphite, and combinations thereof. Examples of conductive particles or fibers include polymers that are conductive in nature, dielectric or conductive particles coated with a conductive material, conductive materials coated with a dielectric filler material, and conductive inorganic particles including metal particles such as gold, platinum, Particles of tin, lead, and other metals or metal alloys), conductive talman particles, and combinations thereof. The conductive filler may be partially or completely coated with a metal (such as a noble metal), a carbon-based material, a conductive ceramic material, a metal inorganic compound, or a community thereof (as described above). An example of a filling material is carbon fiber = graphite coated with copper or nickel. Conductive fillers can be round, oval,

深寬比(例如2或更高)之直條,或其他任一形狀之加工2 料。填充材料此處廣義界定為可以沉積於第二材料以改變 第二材料之物理、化學或電子特性之材料。就其本身而論,Straight bars with aspect ratio (such as 2 or higher), or any other processed 2 material. Filler material is broadly defined herein as a material that can be deposited on a second material to alter the physical, chemical or electronic properties of the second material. As such,

填充材料也可包括介電質或部份或完全以一導電金屬塗W 之導電纖維材料,或此處所述之導電聚合物。部份或6覆 塗覆於導電金屬或導電聚合物中之介電質埴 ^ u 丨电貞具科或導電纖維 材料也可為完整纖維或纖維片。 該導電材料係用於塗覆介電質及導電纖維,而填料。 24 200520893 提供形成該導電研磨材料之所欲導電高度。一般而言,該 導電材料之塗覆係沉積在該纖維及/或填充材料上達一介 於約〇·〇1 μιη及約5〇請門夕m危 Ομιπ間之厗度,例如介約〇川以扭以及 約 ΙΟμπα之間。診洽 1塗覆一般會形成纖維或具有電阻率 約1 ΟΟΩ-cm(例如介的Λ * 約Ο.ΟΟΙΩ-cm及約32Ω-οιη)之填料。太 發明所涵蓋之雷 、 電阻率係取決於纖維或填料以及使用之塗 層,並包括蓋導雷^ 材料塗層之電阻率,例如銘,其〇°c時 的電阻率A 9.8ΐμΩ(;1ηβ合適之導電纖維的範例包括以約 〇._銅、錄或鈷塗覆的尼龍纖維,以及以約的金沉 積在銅、錦或銘層μ 上的尼龍纖維,其纖維總直徑介約3 〇 及約9 0 μ m。 該導電研磨材料可包括該導電或介電纖維的組合(其The filler material may also include a dielectric or conductive fiber material partially or completely coated with a conductive metal, or a conductive polymer as described herein. Partial or 6-layer dielectric coated in a conductive metal or conductive polymer. ^ U 丨 Electrical appliances or conductive fiber materials can also be complete fibers or fiber sheets. The conductive material is used for coating dielectric and conductive fibers, and filler. 24 200520893 Provide the desired conductive height to form the conductive abrasive material. Generally speaking, the coating of the conductive material is deposited on the fiber and / or the filler material to a degree between about 0.001 μm and about 50 μm, and for example, the temperature is about 0 μm. Twist and between about 10 μπα. Diagnosis 1 Coating generally forms fibers or fillers with a resistivity of about 100 Ω-cm (for example, Λ * about 0.001 Ω-cm and about 32 Ω-οιη). The lightning and electrical resistivity covered by the invention depend on the fiber or filler and the coating used, and include the electrical resistivity of the material coating, such as the inscription, whose electrical resistivity at 0 ° C A 9.8ΐμΩ (; Examples of suitable conductive fibers of 1ηβ include nylon fibers coated with copper, copper, or cobalt, and nylon fibers deposited on copper, brocade, or coating μ with gold, with a total fiber diameter of about 3 〇 and about 90 μm. The conductive abrasive material may include a combination of the conductive or dielectric fibers (which

中該介電纖維至少/八 拓L >。卩伤以額外的導電材料及導電纖維塗覆 或覆蓋)以達所欲之藤雪祕七甘 々 導電〖生或,、他研磨物特性。一組合物的 範例係使用塗覆有金的尼龍纖維及石墨作為導電材料,其 至少包括一部份的導電研磨物材料。 該導電纖維材料、導電填料材料或其組合皆可散佈於 黏結材料中。戈形成一複合導電研磨材料。傳統研磨材料 即為黏結材料的—種形式。傳統研磨材料一般係介電材 料’諸如介電聚合物材料。介電聚合物研磨材料的範例包 括聚氨醋以及與填料混合的聚氨醋、聚碳酸醋、聚笨硫鍵 (㈣)、TeflonTM聚合物、聚笨乙稀、三元乙丙橡膠(e削) 或其組合物,w及其他用於研磨材料表面之研磨材料。習 知研磨材料可包括浸潰於氨基甲酸_中或呈泡珠態之乾式 25 200520893 纖維。本發明涵蓋習知任何可連同此處所述之導電纖維及 填料作為黏結材料(已熟知為高分子基材)之研磨材料。The dielectric fiber is at least / Otto L >. The wound is coated or covered with additional conductive materials and conductive fibers) to achieve the desired vine, snow, secret, and sweetness. An example of a composition is the use of gold-coated nylon fibers and graphite as a conductive material that includes at least a portion of a conductive abrasive material. The conductive fiber material, the conductive filler material, or a combination thereof may be dispersed in the bonding material. Ge forms a composite conductive abrasive material. Traditional abrasive materials are a form of bonding material. Traditional abrasive materials are generally dielectric materials ' such as dielectric polymer materials. Examples of dielectric polymer abrasive materials include polyurethane and polyurethane mixed with filler, polycarbonate, polysulfide (键), TeflonTM polymer, polystyrene, EPDM rubber ) Or a combination thereof, and other abrasive materials for abrasive material surfaces. Conventional abrasive materials may include dry 25 200520893 fibers impregnated in urethane or in the form of beads. The present invention encompasses any abrasive material known to be used in conjunction with the conductive fibers and fillers described herein as a bonding material (known as a polymeric substrate).

可將添加物加入黏結材料中以幫助導電纖維、導電填 料或其組合物在聚合材料中的分佈。添加物可用於改善機 械、熱及由纖維及/或填料及黏結材料所形成之研磨材料的 電特性。添加物包括用於改善聚合物交聯的交聯物及用於 分佈導電纖維或導電填料以於黏結材料中更為均勻的分散 劑。交聯物的範例包括氨基化合物、矽烷交聯物、聚異氮 酸脂(polyisocyanate)化合物以及其組合物。分散劑的範例 包括N取代之長鏈鏈烯基丁二硫亞氨、高分子重量之有機 酸的胺鹽、含有極性官能基(例如胺類、氨基化合物、亞胺、 硫亞胺、氫氧根、乙謎)之甲基丙稀或丙稀酸衍生物。另外 含硫化合物,例如氫硫基醋酸以及有關的酯類等已發現是 覆金纖維及黏結材料中之填料的有效分散劑。本發明涵蓋 的添加物數量及種類可為纖維或填充材料以及所使用的黏 結材料而作調整,且前述範例係闡示性的,故不應視為或 解讀為本發明的限制。 此外’導電纖維及/或填充材料的網片可藉由提供足 夠量的導電纖維及/或導電填充材料以形成該黏結材料中 的物理連續或電子連續媒介或相的方式形成於該黏結材料 中。該導電纖維及/或導電填料一般在舆一聚合黏結材料結 合時’至少包括重量百分比介約2%至約85%,例如介約 5%及約60%的研磨材料。 該以導電材料塗覆’及選擇性以導電填料塗覆之纖維 26 200520893 材料的混紡纖維或織物可置於黏結劑+ 覆之纖維材料可為混紡以形成沙、線。“以V電材料塗 結劑或塗料以聚合成導電網片。該紗==可=於黏 中的導電元件,或可混於織物或纖維中線…研磨塾材料 或者,該等導電纖 ,,4人播 飞具抖可與結合劑相結合, 以形成一組合導電研磨材料。合 m ^ ^ j^7 m ^ ^ < I合劑範例包括環氧 U ®a矽膠、氰基甲酸酯、聚亞胺、助 1 直六知翁丰胺聚酿胺、說素高分子、 其添加氟素之衍生物、或其 y t ^ ^ , 物痒0額外的導電材料, 例如導電聚合物、額外的導 具科或其組合物皆可與蚌合 劑使用以達所欲之導電性仏 … .^ 其他研磨物特性。該導電纖維 及/或真料可包括介約2 %至 u ^ ^ 約85/〇,例如介約5%及約60% 的研磨材料。 該導電纖維及/或埴古# μ π 、 /真充材料可用於形成導電研磨材料 或研磨物,且該等研麻 材枓或研磨物具有約5〇n-cm或更 低(彳、勺3Ω cm或更低)的體積或表面電阻。於該研磨物 之一實施例中,該研磨物或研磨物的研磨表面具有約 1Ω cm或更低的電阻。一般而言,該導電研磨材料或導電 研磨材料的組成伤及傳統的研磨材料都可提供具有體積電 阻或約50Ω cm或更低之體積表面電阻的導電研磨物。該 導電研磨#料之組成份的範例及傳統研磨材才斗包括將金或 具有1Ω-cm或更低電阻的碳基纖維,以足夠量沉積在傳統 聚氨醋之研磨材料中,藉以作出具有體積電阻約ΜΩ-cm 或更低的研磨物。 由此處所述之該導電纖維及/或填料所製成的傳統研 27 200520893Additives may be added to the bonding material to help distribute the conductive fibers, conductive fillers, or combinations thereof in the polymeric material. Additives can be used to improve the electrical properties of mechanical, thermal, and abrasive materials formed from fibers and / or fillers and bonding materials. Additives include cross-linkers for improving polymer cross-linking and dispersants for distributing conductive fibers or conductive fillers for more uniform distribution in the bonding material. Examples of the crosslinked material include amino compounds, silane crosslinked materials, polyisocyanate compounds, and combinations thereof. Examples of dispersants include N-substituted long-chain alkenyl butane dithioimines, high molecular weight organic acid amine salts, and polar functional groups (such as amines, amino compounds, imines, thioimines, hydroxides) Root, acetic acid) or methyl acrylic or acrylic acid derivatives. In addition, sulfur-containing compounds such as hydrothioacetic acid and related esters have been found to be effective dispersants for fillers in gold-coated fibers and bonding materials. The number and types of additives covered by the present invention may be adjusted for the fiber or filler material and the bonding material used, and the foregoing examples are illustrative, and should not be considered or interpreted as limitations of the present invention. In addition, a mesh of conductive fibers and / or filler materials may be formed in the bonding material by providing a sufficient amount of conductive fibers and / or conductive filler materials to form a physical continuous or electronic continuous medium or phase in the bonding material. . The conductive fiber and / or conductive filler generally includes at least about 2% to about 85% by weight, such as about 5% and about 60% of abrasive material, when combined with a polymeric bonding material. The fiber coated with conductive material and the fiber optionally coated with conductive filler 26 200520893 The blended fiber or fabric of the material can be placed in a binder + the fiber material can be blended to form sand and thread. "Coating agent or coating with V electrical material to polymerize into conductive mesh. The yarn == can be in the conductive elements in the glue, or can be mixed with the fabric or the fiber center line ... abrasive materials or such conductive fibers, The 4-person flying jitter can be combined with a binding agent to form a combined conductive abrasive material. ^ M ^ ^ j ^ 7 m ^ ^ < I mixture examples include epoxy U ® a silicone, cyanoformat , Polyimide, auxiliary amines, polyamines, polysaccharides, fluorinated derivatives, or yt ^ ^, additional conductive materials, such as conductive polymers, additional The guides or their compositions can be used with the mussel mixture to achieve the desired conductivity 导电 ... ^ other abrasive properties. The conductive fibers and / or authentic materials may include between about 2% to u ^ ^ about 85 / 〇, for example, about 5% and about 60% of the abrasive material. The conductive fiber and / or 埴 古 # μ π / true charge material can be used to form a conductive abrasive material or abrasive, and these ground hemp materials 枓 or The abrasive has a volume or surface resistance of about 50 n-cm or less (彳, spoon 3 Ω cm or less). In one embodiment of the abrasive, , The abrasive or the abrasive surface of the abrasive has a resistance of about 1 Ω cm or lower. Generally speaking, the composition of the conductive abrasive material or conductive abrasive material and the traditional abrasive material can provide a volume resistance or about 50 Ω cm Conductive abrasives with a surface resistance of or lower volume. Examples of the components of the conductive abrasive and conventional abrasive materials include gold or carbon-based fibers with a resistance of 1 Ω-cm or less, deposited in a sufficient amount on In the conventional polyurethane abrasive material, an abrasive material having a volume resistance of about MΩ-cm or lower is made. Traditional research 27 200520893 made of the conductive fiber and / or filler described here

磨材料一般具有在穩定電場下不會降解且在酸或鹼性電解 液中可避免降解的機械特性。該導電材料及任何結合材料 係經結合以提供相同的機械特性。若可以,用於習知研磨 物中的習知研磨材料亦可行。例如,導電研磨材料、無論 是單獨或與結合材料相結合,皆具有對聚合物材料蕭式D 硬度約1 0 0或更低的硬度值,此係由總部設於賓州費城的 美國測試及材料學會(ASTM)所測量的。在一態樣中,該導 電材料具有對聚合物材料約8〇度或更低的蕭氏D硬度 值。該導電研磨部31〇 一般包括約500公釐或稍小的表面 粗链度。該研磨墊特性一般係經設計以於機械研磨期間及 當施一偏壓至基材表面時降低或最小化該基材表面的刮 痕0 研磨物結構 在一態樣中,研磨物是由一被置放於支撐部上之本文 所述之單層的導電研磨材料所構成的。在另一態樣中,研Abrasive materials generally have mechanical properties that do not degrade under a stable electric field and avoid degradation in acid or alkaline electrolytes. The conductive material and any bonding material are bonded to provide the same mechanical properties. If possible, conventional abrasive materials used in conventional abrasive materials may also be used. For example, conductive abrasive materials, whether alone or in combination with a bonding material, have a hardness value of about 100 or less for the D-type hardness of polymer materials. This is a U.S. test based in Philadelphia, PA, and Measured by the Society of Materials (ASTM). In one aspect, the conductive material has a Shore D hardness value of about 80 degrees or less for the polymer material. The conductive abrasive portion 31o generally includes a surface rough chain degree of about 500 mm or less. The characteristics of the polishing pad are generally designed to reduce or minimize scratches on the surface of the substrate during mechanical polishing and when a bias is applied to the surface of the substrate. In one aspect, the abrasive structure is formed by a A single layer of conductive abrasive material described herein is placed on a support. In another aspect, research

磨物可包含多種材料層,包括在基材表面上的至少一導電 材料或提供一導電表面來與基材及至少一物支撐部或底墊 接觸。 一 灵他W的部份剖面 於第3圖中的研磨⑼2〇5包括—複合研磨物,其具肩 電研磨部分310用來研磨—基材表面及一物支撐: 部分320。 該導電研磨部分31〇可包括一導電研磨材料,肩 28 200520893 此處所述之導電纖維及/或導電填料。4 310可包括一分散於聚合材料中且包含 填料的導電材料。該導電纖維可設於聋 導電纖維可包括設於聚合物黏結劑中的 性導電材料一般具有硬度及係數低於銅 的範例除了其他軟於銅的導電金屬、合 外,尚包括金、錫、把-錫合金、鉑以及 不會刮傷研磨基材,本發明亦涵蓋其他 填料。此外,該導電材磨部份可包括一; 或導電纖維環、或導電纖維混紡等形式 織物。該導電研磨部分310也可由多層 導電織物或纖維)所組成。 導電研磨部分3 1 〇之一範例包括 金以及置於聚氨酯中的石墨。其他範例 矽膠中的石墨粒子以及/或碳纖維。其他 氨醋基底中的金或錫粒子。 於另一實施例中,該導電研磨部分 述之研磨粒子360。該研磨粒子360之 露於該導電研磨部分310之上方研磨表 子3 6 0 —般係經配置以移除被研磨基材 層,藉以將下方金屬暴露於電解液並發 增強製程期間的研磨率。研磨粒子360 以破壞形成於金屬表面上之鈍態層的陶 聚合物粒子。聚合物粒子可為固體或可 J如’該導電研磨部 導電纖維及/或導電 合物黏結劑中。該 軟性導電材料。軟 者。軟性導電材料 金以冬陶瓷複合物 鉛。若尺寸夠小而 硬度高於銅的導電 泛多個迴圈、線圈、 以形成導電布料或 導電材料(例如多層 塗覆有尼龍纖維的 包括置於聚氨酯或 耗例包括分佈於聚 3 1 0可具有此處所 至少若干部分係暴 面370。該研磨粒 之金屬表面的鈍態 生電化學反應,以 的範例包括強度足 瓷、無機、有機或 降低研磨部分 29 200520893 磨損率的海綿體。 該物支撑1 〇 Λ Λ 〇 一般具有與導電研磨部分31〇相$ < 較小的直或t J ^ 又 …丨而,本發明亦涵蓋寬度或直徑大# 導電研磨部且瓜大於 # 的物支撐部320。雖然此處圖示係鬧 狀導電研磨部31〇另躲士 # 亍鬧不裱 10及物支撐部320,但本發明也涵 導電研磨部31〇、铷* 由盍該4 如矩形表面或椭圓志左 〜 狀考,例 橢圓表面。本發明更涵蓋導電研磨部31〇、 物支樓部320或兩者可形成線性網狀或帶狀材料者。 “为支撐部320可包括在研磨製程中可The abrasive article may include a variety of material layers, including at least one conductive material on the surface of the substrate or providing a conductive surface to contact the substrate and at least one object support or bottom pad. Partial cross-section of Yi Ling Ta W Grinding 205 in FIG. 3 includes a composite abrasive article with a shoulder, and an electro-abrasive portion 310 is used to polish the surface of the substrate and an object supporting portion 320. The conductive abrasive portion 31 may include a conductive abrasive material, a conductive fiber and / or a conductive filler as described herein. 4310 may include a conductive material dispersed in a polymeric material and including a filler. The conductive fiber may be provided in the deaf conductive fiber may include a conductive conductive material provided in a polymer binder generally having a hardness and a coefficient lower than that of copper. Examples include other conductive metals softer than copper, including gold, tin, Bar-tin alloy, platinum, and non-scratch abrasive substrates, the present invention also covers other fillers. In addition, the abrasive part of the conductive material may include a fabric in the form of a conductive fiber loop or a conductive fiber blend. The conductive abrasive portion 310 may also be composed of a plurality of conductive fabrics or fibers). An example of the conductive abrasive portion 3 1 0 includes gold and graphite placed in polyurethane. Other examples Graphite particles and / or carbon fibers in silicone. Other gold or tin particles in the aminoacetic acid substrate. In another embodiment, the abrasive particles 360 described in the conductive abrasive portion. The abrasive particles 360 exposed on the conductive abrasive portion 310 are generally configured to remove the ground substrate layer, thereby exposing the underlying metal to the electrolyte and enhancing the polishing rate during the process. The particles 360 are ground to destroy the ceramic polymer particles of the passive layer formed on the metal surface. The polymer particles may be solid or may be in the conductive abrasive portion, the conductive fiber and / or the conductive compound binder. The flexible conductive material. Soft person. Flexible conductive material Gold to winter ceramic compound Lead. If the size is small enough and the hardness is higher than copper, the conductive pans have multiple loops, coils to form conductive cloth or conductive materials (for example, multiple layers coated with nylon fibers include placing in polyurethane or consumption including distribution in poly 3 1 0 may It has at least some parts here that are exposed surfaces 370. The passive surface electrochemical reaction of the metal surface of the abrasive grains, for example, includes the strength of porcelain, inorganic, organic or sponge body which reduces the wear rate of the abrasive part. 29 200520893 The support 1 〇Λ Λ 〇 generally has a phase similar to the conductive grinding portion 31 〇 < smaller straight or t J ^ again ... The invention also covers a large width or diameter # conductive grinding section and melons larger than #部 320。 Although shown here is a trouble-like conductive grinding section 31〇OTHER Hideshi # 亍 闹 不 架 1010 object support section 320, the present invention also covers the conductive grinding section 31〇, 铷 * 盍 盍 4 as a rectangle The surface or ellipse is left to shape, such as an elliptical surface. The present invention also covers the conductive abrasive part 31, the material support part 320, or both of which can form a linear mesh or band-shaped material. "The support part 320 may include In the grinding process Can

期間被消粍或損傷的# ^ % # ECMP 傷的鈍態物質。例如,該物支撐部可由s 知研磨材料組成,包衽印 ^ 聚3物材料,例如聚氨酯以 料混合的聚氨酯、平俨缺& 久興填 聚厌酸g日、聚苯硫醚(pp 三 膠(EPDM)、Tefl〇nTM 乙丙橡 ^ ^ # . 口物或其組合物,以及其他用於研 磨材料表面之研磨材料。 ^ 質,例如經壓縮且浸潰於t 〖生材 又,貝於虱基甲酸酯中的氈式纖維,用以 吸附製程期間施於該研磨物 贗物205及該研磨頭130間的若千 壓力。該軟性材質可為蕭式 也2士 蕭式A硬度介約20及約90間的硬 度值。 % 或者,該物支撐部32〇可士 ± 了由一導電材料所製成,其適 於%繞電解液而不會傷害研磨, ^ ^ ^ . ^ m 其包括導電性的貴金屬或 導電聚合物,用以提供冶芬兮 μ、遍及9玄研磨物的導電性。貴金屬的 fe例包括金、鉑、鈀、銥、鍊、 錄錢、釕、鐵以及其組合物, 其中又以金及始為佳。:y*祖奋命to 材抖會與周圍的電解液相作用,例 如銅,其可使用在該等材料因 h &金屬(例如習知研磨材料 30 200520893 或貴金屬)而與周圍電解液絕緣時。 當該物支撐部320係導電性 有較該導電研磨部a 31G為高^該物支揮部320可具 例如該導電研磨部分310與包 性(亦即低電阻率)。 可I右1 0Ω + 鉑的物支撐部320相比, 了具有Ι.ΟΩ-cm或更低的電阻率 ni q 〇 (因該物支#部電阻在〇 時為9·81μΩ-οιη)。導電物支撐部 . _ 0在研磨期間可提供土石 勻偏壓或電流以最小化沿該物表 " 、 表面(例如該物的半徑)的導 電電阻,以均勻遍及該基材表 4衣面的IW極分解。導電物支# ^% # ECMP Injured Passive Substances Diminished or Damaged During the Period. For example, the material support portion may be composed of abrasive materials, including printed materials, such as polyurethane mixed with polyurethane, Pingyao & Jiuxing polyanalyte, polyphenylene sulfide (pp three Glue (EPDM), TeflOnTM Ethylene Propylene Rubber ^ ^ #. Mouthpiece or composition thereof, and other abrasive materials used for abrasive material surface. ^ Quality, such as compressed and impregnated with t Felt-type fibers in methanoformate are used to absorb the thousands of pressures applied between the grinding object 205 and the grinding head 130 during the manufacturing process. The soft material can be Xiao type and 2 Shi type A The hardness value is between about 20 and about 90.% Alternatively, the support portion of the object is made of a conductive material, which is suitable for% winding around the electrolyte without harming the grinding, ^ ^ ^. ^ m It includes a conductive precious metal or conductive polymer to provide conductivity to all metals, such as gold, platinum, palladium, iridium, chain, money, ruthenium, and iron. And its composition, of which gold and beginning are better .: y * 祖 strives to Electrolyte phase, such as copper, can be used when these materials are insulated from the surrounding electrolyte due to h & metal (such as the conventional abrasive material 30 200520893 or noble metal). When the material support 320 is more conductive The conductive polishing portion a 31G is high. The material supporting portion 320 may have, for example, the conductive polishing portion 310 and the covering property (ie, low resistivity). Compared with the object supporting portion 320 of 10 Ω + platinum, It has a resistivity ni q 〇 of 1.0Ω-cm or lower (because the resistance of the branch # section is 9.81 μΩ-οιη at 0). The conductive support portion. _ 0 can provide earth and stone uniform bias during grinding Or current to minimize the electrical resistance along the surface of the object, such as the radius of the object, to decompose the IW pole throughout the surface of the substrate table 4. The conductive object supports

部320也可耗接至電源以傳送電力至該導電研磨部分心 -般而言,該導電研磨部分31〇係藉習知適合 材料使用及用於研磨t帛中的、结劑黏接至該物支 320。本發明涵蓋其他可將該導電研磨部分31〇連結至二物 研磨部320上的裝置,例如以壓模或層壓方式。該黏結咧 依製程所需或製造者所欲可為導電性或介電性。該物支^ 部3 20可藉一黏結劑或機械夾固設於一支撐部,例如碟盤 206。或者,若研磨物205可僅包括一導電研磨部” 0 1 0,而The part 320 can also be connected to a power source to transmit power to the conductive abrasive part. Generally speaking, the conductive abrasive part 31 is a material suitable for the use of materials and used for grinding.物 支 320。 Thing 320. The present invention encompasses other devices that can connect the conductive abrasive portion 31 to the two-object abrasive portion 320, such as by stamping or laminating. The bonding may be conductive or dielectric depending on the manufacturing process or the manufacturer's desire. The material support part 3 20 can be fixed on a support part, such as a disc 206, by an adhesive or a mechanical clip. Alternatively, if the abrasive object 205 may include only a conductive abrasive portion "0 1 0, and

該導電研磨部分可藉一黏結劑或機械夾固設於一 又5?邵 (例如碟盤206)。 該導電研磨部310及該研磨物205的物支擇部32〇 一般可穿過電解液。數個穿孔可分別形成於該導電研磨部 3 1〇及物支撐部320中,以幫助液體流通於其間。該數個 穿孔可讓電解液流過並於製程期間接觸該表面。該等穿孔 可於製造期間設於其中,例如設於導電纖維或織物中的織 布間,或可藉機械方式設置並模造穿透該等材料。該等穿 31 200520893 孔可部份或完全形成穿通個研磨物205層。該導電研磨部 310之該等穿孔及該物支撐部32〇之該等穿孔可彼此對準 以利於液體流通其間。 形成於該研磨物205之該等穿孔35〇的範例包括該研 磨物中的孔洞,其中該孔洞具有直徑介於約〇 〇2英吋(〇 5 公釐)至約〇·4英吋(10公考)之間。該研磨物2〇5的厚度可 藉約0.1mm及約5mm之間。例如,穿孔彼此可相距一介 約0.1英吋及約1英吋間的距離。 該研磨物205具有約20%至約80%之間的穿孔密度, 以提供足夠電解液的物質流遍佈該研磨物表面。然而,本 發明亦涵蓋穿孔密度小於或高於此處所述用以控制液體流 通其間之穿孔密纟。於一範例中,約5 〇%的穿孔密度以發 現可提供足夠的電解液,以提供自該基材表面的均勻陽極 分解。此處所述之穿孔密度係廣義的描述為該等穿孔所包 括之研磨物的體積。該穿孔密度包括當穿孔形成在該研磨 物205中時’該表面或研磨物本體的總計數量以及直徑或 穿孔尺寸。 5穿 寸及雄、度係經選擇以提供通過該研磨物 2 05至基材表面的均句電解液分佈。一般而言,該導電研 磨口P刀310以及物支擇部32〇兩者之穿孔尺寸、穿孔密度 以及穿孔的、、且織彼此都會經配置及校準,卩充分提供通過 該導電研磨部> 31〇及該物支撐部32()至該基材表面的電 解液流。 /籌槽可0又置於該研磨物205中以促進電解液流經該 32 200520893 研磨物 205,藉以提供右 v ^ ^ „ ’、效或均勻的電解液流以進行陽極 分解或電鍍製程。該等溝 麻士 , ^ n ^ "可#份形成於單層中,或經多 層中。本發明亦涵蓋可彡 ^ ^ ^ ^ ^ ^ ^ ^战於上層或接觸該基材表面之研 磨表面處的溝槽。為提供 .^ " 9加或經控制的電解液流至該研 磨物表面,該等穿孔之一 不將該等穿孔連通設於該研 σ| &或多個部分可與溝槽相連 通。或者’該等穿孔,之所有或 磨物205中的溝槽。 被用來促進電解潘、泣叔^ 液机動的溝槽的例子包括直線溝 槽、弧形溝槽、同心圓溝槽、 用1價公向溝槽及螺旋溝槽。形成 於研磨物205中的溝槽且右一 丹仏八有方形、圓形、半圓形或其它 有助於流遍該研磨物表面的形狀。該等溝槽可彼此相交。 溝槽可被安排成圖案,像是設置在該研磨表面的- X-Y圖 案或-形成在該研磨表面上的—三角形圖t,或它們的組 合用以改善在該基材的表面上的電解液流。 該等溝槽彼此可相距約30密爾(mil)至約3〇〇密爾的 間距。通常,%成於研磨物上的溝槽寬度約在5密爾至約 30密爾之間’但其尺寸可隨著研磨的需要而改變。一溝槽 圖案的例子包括約1〇密爾寬的的溝槽,彼此相距約6〇密 爾。任何合適的溝槽配置、尺寸、直徑及間距都可被用來 提供所想要的電解液流。其他的剖面及溝槽配置係詳細接 示於2〇〇1年10月U曰所申請,目前審查中的美國專利臨 時申請序號第 6〇/328,434,標題為「Meth〇d And Apparatus For Polishing Substrates」,其全文係合併於此以供參考。 電解液的輸送可藉由在至少部分的溝槽中形成穿孔用 33 200520893 以改善電解液流來 更均勻的分佈於基 進的額外電解液而 於 2001 年 12 月 1 0/026,854,其全 $ 具有穿孔^溝 係一具有溝槽之研 之圓形墊 440係 446,以讓電解液流 0.1英吋及約1英心 吋(0.5公釐)及約0 的數目於形狀可隨 成分而變動。 溝槽442係 448,以協助由承台 材及該研磨物之間 案,包括第4圖所 心圓溝槽、第5圖卢 角形圖案。 第5圖為一研, 具有設置在一研磨 溝槽542。穿孔546 且亦可被設置在一 該研磨物548上在; 加強,甚至藉用於處理基材之該等溝槽 材表面,且處理的電解液會藉該穿孔流 更新。墊穿孔的範例及溝槽更詳細揭示 20曰所申請之美國專利申請序號第 L係合併於此以供參考。 槽之研磨物的範例係描述如下。第4圖 磨物之實施例的俯視圖。該研磨物2 0 5 圖示具有數個足夠尺寸及組織的穿孔 至基材表面。該等穿孔446彼此相距約 f。該等穿孔可為具有直徑介約〇.〇2英 • 4英吋(10mm)間的環形穿孔。又,穿孔 著所使用的設備,處理參數,及ECMP 夕成於該研磨物205中之該研磨表面 2 02體積溶液之新鮮電解液傳送至該基 的空隙。該等溝槽442可具有不同圖 和在該研磨表面448上一大致圓形的同 ί示之一 X-Y圖案以及第6圖所示之三 I塾的另一實施例的頂視圖,該研磨墊 色540的研磨部548上的χ-γ圖案中的 可被§又置在垂直及水平的溝槽交會處, I直的溝槽,一水平的溝槽,或設置在 |槽542以外的地方。穿孔546及溝槽The conductive abrasive portion can be fixed to another 5? (E.g., a disc 206) by an adhesive or a mechanical clamp. The conductive polishing portion 310 and the object selection portion 32 of the polishing object 205 can generally pass through the electrolyte. A plurality of perforations may be formed in the conductive polishing portion 310 and the object support portion 320, respectively, to help the liquid flow therethrough. The perforations allow electrolyte to flow through and contact the surface during the manufacturing process. The perforations may be provided therein during manufacture, such as in a fabric room in conductive fibers or fabrics, or may be mechanically provided and molded to penetrate these materials. The through holes 31 200520893 can partially or completely form a layer 205 through which an abrasive is passed. The perforations of the conductive abrasive portion 310 and the perforations of the object support portion 32 may be aligned with each other to facilitate liquid circulation therebetween. Examples of the perforations 35 formed in the abrasive 205 include holes in the abrasive, wherein the holes have a diameter between about 0.02 inches (0.05 mm) and about 0.4 inches (10 Public examination). The thickness of the abrasive article 205 can be between about 0.1 mm and about 5 mm. For example, the perforations may be separated from each other by a distance of between about 0.1 inches and about 1 inch. The abrasive article 205 has a perforation density between about 20% to about 80% to provide a sufficient flow of a substance of electrolyte solution throughout the surface of the abrasive article. However, the present invention also covers perforation densities that are less or higher than the perforations described herein for controlling the flow of liquid therethrough. In one example, a perforation density of about 50% was found to provide sufficient electrolyte to provide uniform anodic decomposition from the surface of the substrate. The perforation density described herein is broadly described as the volume of abrasive material covered by the perforations. The perforation density includes when the perforations are formed in the abrasive article 205 'the total number of the surface or the abrasive article body and the diameter or perforation size. The 5 inch, male, and degree are selected to provide a uniform electrolyte distribution through the abrasive article 05 to the surface of the substrate. Generally speaking, the perforation size, perforation density, and perforation of both the conductive grinding mouth P knife 310 and the material support portion 32 will be configured and calibrated, and the full provision of passing through the conductive grinding portion > 31 ° and the electrolyte flow from the object support portion 32 () to the surface of the substrate. The chip can be placed in the grinding object 205 again to promote the electrolyte to flow through the 32 200520893 grinding object 205, so as to provide a right or effective electrolyte flow for anodic decomposition or electroplating process. The grooved hemp can be formed in a single layer or in multiple layers. The present invention also covers grinding that can be performed on the upper layer or contact the surface of the substrate Grooves on the surface. In order to provide 9 ^ or controlled electrolyte flow to the surface of the abrasive, one of the perforations does not connect the perforations to the research σ | & Can communicate with the groove. Or 'the perforations, all or the groove in the abrasive 205. Examples of grooves used to promote electrolytic pan, uncle ^ liquid maneuver include straight grooves, arc grooves , Concentric circular grooves, 1-valent common grooves, and spiral grooves. The grooves formed in the abrasive 205 have a square, circular, semi-circular, or other shape that helps flow through the groove. The shape of the surface of the abrasive. The grooves can intersect each other. The grooves can be arranged in a pattern, as if arranged in the grinding The surface-XY pattern or-a triangular pattern t formed on the abrasive surface, or a combination thereof to improve the flow of the electrolyte on the surface of the substrate. The grooves may be spaced apart from each other by about 30 mils ( mil) to about 300 mils. Generally, the groove width on the abrasive is about 5 mils to about 30 mils', but its size can be changed according to the needs of grinding. Examples of trench patterns include trenches that are about 10 mils wide and about 60 mils apart from each other. Any suitable trench configuration, size, diameter, and spacing can be used to provide the desired electrolyte flow The other sections and groove configurations are shown in detail in October 2001. U.S. Patent Application No. 60 / 328,434 is currently under examination and entitled "Meth〇d And Apparatus For Polishing" Substrates ", the full text of which is incorporated herein by reference. The electrolyte can be transported by forming perforations in at least part of the groove to improve the electrolyte flow to more evenly distribute the additional electrolyte in the base. As of December 2001, 10 / 026,854, its full $ A perforated ^ groove is a grounded circular pad 440 with a groove 446 to allow the electrolyte to flow 0.1 inches and about 1 inch (0.5 mm) and the number of about 0. The shape can vary with the composition . The groove 442 is 448 to assist the case between the base material and the abrasive, including the circular groove in the center of Fig. 4 and the angular pattern of Tulou 5. FIG. 5 is a view of a grinding process having a polishing groove 542. The perforations 546 can also be placed on the abrasive object 548; reinforce, even by treating the surface of the groove material of the substrate, and the treated electrolyte will be renewed by the perforation flow. Examples of pad perforations and grooves are disclosed in more detail. U.S. Patent Application Serial No. L, filed on 20th, is incorporated herein by reference. Examples of the abrasives of the grooves are described below. Fig. 4 A plan view of an example of an abrasive. The abrasive article 2 5 shows a number of perforations of sufficient size and structure to the surface of the substrate. The perforations 446 are approximately f from each other. The perforations may be annular perforations having a diameter between about 0.02 inches and 4 inches (10 mm). In addition, the used equipment, processing parameters, and fresh electrolyte of the 002 volume solution of the grinding surface 205 formed in the grinding object 205 are perforated to the voids of the substrate. The grooves 442 may have different views and a generally circular XY pattern on the polishing surface 448 and a top view of another embodiment of the third embodiment shown in FIG. 6, the polishing pad The χ-γ pattern on the grinding part 548 of color 540 can be placed at the intersection of vertical and horizontal grooves, a straight groove, a horizontal groove, or a place other than the groove 542. . Perforation 546 and groove

34 200520893 5 4 2被設置在該研磨物的内徑5 5 0上而該研磨墊5 4 4的外 徑5 5 0是沒有穿孔及溝槽的。34 200520893 5 4 2 is set on the inner diameter 5 5 0 of the abrasive and the outer diameter 5 5 0 of the polishing pad 5 4 4 is free of perforations and grooves.

第6圖為設有圖案之研磨物640的另一實施例。在此 實施例中,溝槽被設置成X-Y圖案且具有被對角線地設置 的溝槽645其與X-Y圖案的溝槽642相交會。對角線溝槽 645可镇設置成於X-Y溝槽642夾約30度至約60度的角 度。穿孔646可被設置在X-Y溝槽642的交會處,X-Y溝 槽642與對角線溝槽645的交會處,沿著溝槽642及645, 或設置在該研磨物648上沒有溝槽642,645的地方。穿孔 646及溝槽642被設置在該研磨物的内徑650上而該研磨 墊644的外徑650是沒有穿孔及溝槽的。 溝槽圖案(諸如螺旋形溝槽、層層捲繞式溝槽以及渦輪 式溝槽等)的其他範例則更詳細描述於2 0 0 1年1 〇月1 1號 申請、現正審查中之美國專利臨時申請序號第60/328,434 號,其標題為「Method And Apparatus For Polishing Substrates」,其全文係合併於此以供參考。FIG. 6 shows another embodiment of the patterned abrasive object 640. In this embodiment, the grooves are arranged in an X-Y pattern and have grooves 645 arranged diagonally which intersect with the grooves 642 of the X-Y pattern. The diagonal grooves 645 may be disposed at an angle of about 30 degrees to about 60 degrees between the X-Y grooves 642. The perforation 646 may be provided at the intersection of the XY groove 642, the intersection of the XY groove 642 and the diagonal groove 645, along the grooves 642 and 645, or without the groove 642 on the abrasive 648. 645 places. Perforations 646 and grooves 642 are provided on the inner diameter 650 of the abrasive and the outer diameter 650 of the polishing pad 644 is free of perforations and grooves. Other examples of groove patterns (such as spiral grooves, layer-wound grooves, and turbine grooves, etc.) are described in more detail in the application of October 1, 2001, which is currently under review. US Patent Provisional Application Serial No. 60 / 328,434, entitled "Method And Apparatus For Polishing Substrates", the entirety of which is incorporated herein by reference.

除了研磨物205中之穿孔及溝槽外,也可浮雕導電研 磨部3 1 0來包括表面紋理。浮雕也可改善電解液、經移除 之基材、副產物以及微粒子的傳送。浮雕也可降低研磨基 材的刮痕,並改變研磨基材及研磨物2 0 5間的磨擦力。經 浮雕之表面紋理可均勻分布於該導電研磨部31〇。浮雕之 表面紋理可包括例如角錐、島峡型、以圓形、矩形及正方 形及其他幾何形狀相交之結構。本發明涵蓋其他浮雕於導 電研磨部3 1 0上之紋理結構。該經浮雕之表面可覆蓋該導 35 200520893 電研磨。卩310百为之五至九十五之表面積,例如介於該導 電研磨部310百分之十五至九十之表面積。 導電研磨表面 第7A圖係一可用於形成該研磨物205之導電研磨部 3-1 〇的導電織物或織品7 0 0之一實施例的頂視部份圖。該 導電織物或織品係由交織織品7 1 0所組成,其如前文所述 係以導電材料塗覆。 於一實施例中,於垂直720及水平730方向(示於第7A 圖平面)之該交織織品710的織布或藍狀編織(basket_weave) 圖案係闡示於第7A圖。本發明亦涵蓋其他用以形成該導電 織物或織品700之織品,例如紗線或不同交織、織網或篩網 圖案。於一態樣中,該織品710係經交織以提供該織品7〇〇 中之通道740。該等通道740可讓電解液或流體(包括離子以 及電解質化合物)流經該織品700。該導電織品700可放置於 聚合物結合劑中,例如聚氨基甲酸乙酯。導電填料也可放 置於上述之聚合物結合劑中。 第7B圖係置於該物205之物支撐部320上之該導電織 物或織品700的部分截面圖。該導電織物或織品7〇〇可放置 呈或多個置於該物支撐部320上方之連續層,該物支撐部 包括任一形成於該物支撐部320中之穿孔350。該織物或織 印7〇〇可藉一黏結物固定至該物支撐部32〇。當浸入電解液 時’該織品700適於讓電解質流經該等纖維、織布或形成於 36 200520893 織物或織品7 0 〇中之通道。中間層也可選擇性的設於該織物 或織品700以及物支撐部320之間。該中間層具可滲透性、 或可包括數個與該等穿孔320相對準之穿孔,以供電解液流 經該物2 0 5 〇In addition to the perforations and grooves in the abrasive article 205, the conductive grinding section 3 10 may be embossed to include the surface texture. Embossments also improve the transfer of electrolytes, removed substrates, by-products, and particulates. The relief can also reduce scratches on the abrasive substrate and change the friction between the abrasive substrate and the abrasive material. The embossed surface texture can be evenly distributed on the conductive abrasive portion 31. The surface texture of the relief may include, for example, pyramids, islands, structures that intersect with circles, rectangles, squares, and other geometric shapes. The present invention covers other textured structures embossed on the conductive abrasive portion 3 10. The embossed surface can cover the guide 35 200520893 electromill. The surface area of 卩 310 is five to ninety-five, for example, the surface area of the conductive abrasive portion 310 is fifteen to ninety percent. Conductive Abrasive Surface FIG. 7A is a partial top view of one embodiment of a conductive fabric or fabric 700 that can be used to form the conductive abrasive portion 3-1 of the abrasive article 205. The conductive fabric or fabric is composed of an interwoven fabric 7 10, which is coated with a conductive material as described above. In one embodiment, the woven or basket_weave pattern of the interweaving fabric 710 in the vertical 720 and horizontal 730 directions (shown in the plane of FIG. 7A) is illustrated in FIG. 7A. The invention also covers other fabrics used to form the conductive fabric or fabric 700, such as yarns or different interweaving, weaving, or screen patterns. In one aspect, the fabric 710 is interwoven to provide a channel 740 in the fabric 700. The channels 740 allow electrolyte or fluids (including ions and electrolyte compounds) to flow through the fabric 700. The conductive fabric 700 may be placed in a polymer binder, such as polyurethane. The conductive filler may also be placed in the above-mentioned polymer binder. Fig. 7B is a partial cross-sectional view of the conductive fabric or fabric 700 placed on the object support portion 320 of the object 205. The conductive fabric or fabric 700 can be placed in a continuous layer or multiple layers above the object support portion 320, and the object support portion includes any perforation 350 formed in the object support portion 320. The fabric or print 700 can be fixed to the support 32 by an adhesive. When immersed in electrolyte, the fabric 700 is adapted to allow the electrolyte to flow through the fibers, weaves, or channels formed in the fabric. The intermediate layer may also be selectively provided between the fabric or fabric 700 and the object supporting portion 320. The intermediate layer is permeable or may include several perforations aligned with the perforations 320 for the electrolyte to flow through the object.

或者,若該等通道740被判定不足以讓電解質有效流過 該織品700時(例如,金屬離子無法擴散其間),該織品700 也可設穿孔以增加電解液流通其間。該織品700 —般可讓電 解液的流率提升約每分鐘20加侖。 第7C圖係該織物或織品700之部分截面圖,該織物或 織品700可以數個穿孔750作圖案,以匹配該物支撐部320 中之穿孔350圖案。或者,該等穿孔之若干或全部可不與該 物支撐部320之穿孔350對準。該等穿孔之對準或非對準可 讓操作者或製造商去控制流經用以接觸該基材表面之該研 磨物的電解質流率或體積。Alternatively, if the channels 740 are determined to be insufficient for the electrolyte to effectively flow through the fabric 700 (for example, metal ions cannot diffuse therebetween), the fabric 700 may also be provided with perforations to increase the electrolyte flow therethrough. The fabric 700 generally increases the flow rate of the electrolyte by about 20 gallons per minute. FIG. 7C is a partial cross-sectional view of the fabric or fabric 700. The fabric or fabric 700 can be patterned with several perforations 750 to match the pattern of perforations 350 in the support 320. Alternatively, some or all of the perforations may not be aligned with the perforations 350 of the object support 320. The alignment or misalignment of the perforations allows the operator or manufacturer to control the electrolyte flow rate or volume through the abrasive used to contact the surface of the substrate.

該織品7 0 0之範例係交織之藍狀編織,其具有介約8及 約1 〇之纖維寬度,該纖維至少包括一塗覆有金的尼龍纖 維。該纖維之範例如尼龍纖維,該尼龍纖維上約有〇·丨μιη 之銘、銅或錄,並有約2μηι之金置於該始、銅或鎳上。 或者,導電織網也可用於該導電織物或織品700處。該 導電織網可至少包括導電纖維、導電填料或至少一部份之 導電織物7 0 0於其中或塗以導電結合劑。該導電結合劑至少 包括一非金屬導電聚合物、或置於一聚合化合物中之導電 材料之複合物。導電填料(諸如石墨粉、石墨片層、石墨纖 37 200520893 維、碳纖維、碳粉末、黑炭、塗覆於導電材料·中之金屬粒 子或纖維)以及聚合物材料(例如聚氨基甲酸乙酯)之混合 物等可用以形成該導電結合劑。此處所述之該等塗覆有導 電材料之纖維也可作為導電結合劑之導電填料。例如,碳 纖維或塗有金之尼龍纖維也可用於形成導電結合劑。 該導電結合劑若需要,也可包括若干添加劑以幫助導 電填料及/或纖維之分散,改善聚合物及填料及/或纖維間 之黏結性,並可改善導電結合劑之機械性、熱以及電特性。 可用以改善黏結性之添加劑範例包括環氧樹脂、矽膠、氨 基曱酸酯、聚醯胺或其結合物。 該導電填料及/或纖維以及聚合物材料之組成物也可 用以提供特定特性,例如導電性、黏結性、耐久係數。舉 例來說’該導電結合劑至少包括可連同此處所述之物及製 程使用之導電填料,其重量百分比介約2及約8 5之間。可作 為導電填料以及導電結合劑之材料則詳述於2〇〇1年12月27 曰申清之美國專利申請序號第1〇/〇33,732號,其全文係合 併於此以供參考。 該導電結合劑之厚度介約1公釐及丨〇公釐之間,例如介 、’、勺1 〇公釐及約1公釐間。多層導電結合劑可施於該導電織 網。該導電織網可以相同方式做為第7]3及7C圖所示之導電 織物或織品700。該導電結合劑可以多層方式施於該導電織 網上。於一態樣中,該導電結合劑係在該織網穿孔後施於 该導電織網,以於穿孔製程時保護被暴露之織網部分。 38 200520893 此外,導電底漆(primer)也可在施行導電結合劑之前 先置於該導電織網上,以改善該導電結合劑對導電織網的 黏結性。該導電底漆可以與導電結合纖維相同之材料製 成,並以改變組成物之方式以得具有較該導電結合劑為大 之原料間黏結性。合適之導電底漆材料可具有低於約 ΙΟΟΩ/cm之電阻,例如介約Ο.ΟΟΙΩ/cm及約32Q/cm間之電 阻。 或者,導電箔(foil)也可用於該導電織物或織品700之 處,如第7D圖所示。該導電箔一般包括金屬箔78〇,其設 於一導電結合劑790中或於該支撐層320上塗有導電結合劑 7 90。形成金屬箔之範例包括金屬塗覆之織品、導電材料 等,導電材料包括銅、鎳以及鈷及貴金屬(如金、鉑、鈀、 銥、銖、铑、釕、娥、錫、鉛以及其組合物,其中又以金、 錫及及麵為佳)。該導電箔也可包括非金屬導電箔板,例如 銅片、碳纖維織網箔。該導電箔也可包括一介電或導電材 料之金屬塗覆織物,例如銅、鎳、錫或金塗覆一尼龍纖維 之織物。該導電箔也可包括以前述導電結合材料塗覆之導 電或介電材料織品。該導電箔也包括中間連接導電金屬線 或金屬條(例如銅金屬線)之金屬架、金屬篩或金屬網,其 可以前述方式以一導電結合材料塗覆之。本發明亦涵蓋此 處形成該金屬箔之其他材料的使用。 此處所述之導電結合劑790可封裝(encapSUiate)該金 屬沿780,讓該金屬箔78〇成為可觀察到能與周圍電解液發 200520893 生起作用的導電金屬,例如銅。該導電箔可如前述設有數 個穿孔。雖然此處並未圖示,然該導電箔可耦接至一導電 金屬線以&供電源偏壓該研磨表面。 該導電結合劑7 9 0可作為導電網或織品7 〇 〇且可以多層 方式施於該金屬箔7 8 0上。於一態樣中,該導電結合劑7 9 0 係於該金屬箔7 8 0作穿孔後施於該金屬箔7 8 0,以保護該金 屬箔7 8 0由該穿孔製程所暴露出的部分。An example of this fabric 700 is an interwoven blue weave having a fiber width of about 8 and about 10, the fiber including at least one nylon fiber coated with gold. Examples of such fibers are nylon fibers, the nylon fibers having an inscription, copper, or copper of about 0.1 μm, and gold of about 2 μm on the base, copper, or nickel. Alternatively, a conductive mesh may be used at the conductive fabric or fabric 700. The conductive mesh may include at least conductive fibers, conductive fillers, or at least a portion of a conductive fabric 700 or coated with a conductive bonding agent. The conductive binder includes at least a non-metal conductive polymer or a composite of conductive materials placed in a polymer compound. Conductive fillers (such as graphite powder, graphite sheet, graphite fiber 37 200520893 dimension, carbon fiber, carbon powder, black carbon, metal particles or fibers coated in conductive materials ·) and polymer materials (such as polyurethane ) And the like can be used to form the conductive bonding agent. The conductive material-coated fibers described herein can also be used as a conductive filler for a conductive binder. For example, carbon fibers or gold-coated nylon fibers can also be used to form a conductive bond. If needed, the conductive bonding agent may also include a number of additives to help disperse conductive fillers and / or fibers, improve the adhesion between polymers and fillers and / or fibers, and improve the mechanical, thermal, and electrical properties of conductive bonding agents characteristic. Examples of additives that can be used to improve adhesion include epoxy resins, silicones, urethanes, polyamides, or combinations thereof. The composition of the conductive filler and / or fibers and the polymer material may also be used to provide specific characteristics, such as conductivity, adhesion, and durability coefficient. For example, the conductive bonding agent includes at least a conductive filler that can be used in conjunction with the materials and processes described herein, and its weight percentage is between about 2 and about 85. Materials that can be used as conductive fillers and conductive binders are detailed in U.S. Patent Application Serial No. 10 / 〇33,732, dated December 27, 2001, which is incorporated herein by reference in its entirety. The thickness of the conductive bonding agent is between about 1 mm and 0 mm, for example, between about 10 mm and about 1 mm. A multilayer conductive bonding agent can be applied to the conductive web. The conductive mesh can be made in the same manner as the conductive fabric or fabric 700 shown in Figs. 7] 3 and 7C. The conductive bonding agent may be applied to the conductive web in a multilayer manner. In one aspect, the conductive bonding agent is applied to the conductive mesh after the mesh is perforated to protect the exposed portion of the mesh during the perforation process. 38 200520893 In addition, a conductive primer can be placed on the conductive mesh before the conductive bond is applied to improve the adhesion of the conductive bond to the conductive mesh. The conductive primer can be made of the same material as the conductive bonding fiber, and the composition can be changed so as to have an adhesiveness between raw materials larger than that of the conductive bonding agent. A suitable conductive primer material may have a resistance below about 100 Ω / cm, such as a resistance between about 0.0001 Ω / cm and about 32 Q / cm. Alternatively, a conductive foil may be used at the conductive fabric or fabric 700, as shown in FIG. 7D. The conductive foil generally includes a metal foil 78 °, which is disposed in a conductive bonding agent 790 or coated with a conductive bonding agent 7 90 on the support layer 320. Examples of metal foil formation include metal-coated fabrics, conductive materials, etc. Conductive materials include copper, nickel, and cobalt and precious metals such as gold, platinum, palladium, iridium, baht, rhodium, ruthenium, e, tin, lead, and combinations thereof Materials, of which gold, tin and noodles are preferred). The conductive foil may also include a non-metallic conductive foil, such as a copper sheet, a carbon fiber woven mesh foil. The conductive foil may also include a metal-coated fabric of a dielectric or conductive material, such as copper, nickel, tin, or gold-coated fabric of a nylon fiber. The conductive foil may also include a fabric of a conductive or dielectric material coated with the aforementioned conductive bonding material. The conductive foil also includes a metal frame, a metal screen, or a metal mesh connected with conductive metal wires or metal bars (such as copper metal wires) in the middle, which can be coated with a conductive bonding material in the foregoing manner. The invention also encompasses the use of other materials forming the metal foil here. The conductive bonding agent 790 described herein can encapSUiate the metal edge 780, making the metal foil 78 ° a conductive metal, such as copper, which can be observed to interact with the surrounding electrolyte. The conductive foil may be provided with a plurality of perforations as described above. Although not shown here, the conductive foil may be coupled to a conductive metal wire to bias the abrasive surface with a power supply. The conductive bonding agent 790 can be used as a conductive mesh or fabric 700 and can be applied to the metal foil 780 in a multilayer manner. In one aspect, the conductive bonding agent 790 is applied to the metal foil 7 80 after being perforated to protect the portion of the metal foil 7 80 exposed by the perforation process .

此處所述之該導電結合劑可施於該導電織品7〇〇、箔 7 8 0或織網上。該結合劑在乾燥及固化後會接著於該織品、 猪或織網上固化。其他包括射出成型、壓模、層壓、壓力 鍋、擠製或該等方法結合之合適製程方法也可用以封裝該 導電織品、織網或箔。熱塑性及熱固性結合劑也可應用之。The conductive bonding agent described herein can be applied to the conductive fabric 700, the foil 780 or the mesh. After drying and curing, the bonding agent is then cured on the fabric, pig or web. Other suitable processes including injection molding, compression molding, lamination, pressure cooker, extrusion, or a combination of these methods can also be used to encapsulate the conductive fabric, web, or foil. Thermoplastic and thermosetting bonding agents can also be used.

該導電結合劑及該導電箔之金屬箔化合物間的黏結劑 也可藉由於該金屬箔上設數個穿孔(直徑或寬度介約〇 ·丨μιη 及約1 mm)的方式、或藉由於該金屬箔及該導電結合劑間施 以導電底漆的方式進行強化。該導電底漆可為前述用於織 網之導電底漆相同材料。 第7E圖係一導電織物或織品798之另一實施例的截面 圖,該導電織物或織品可用於形成研磨物2〇5之一導電研磨 部310的下方層792。該導電織物或織品可以交織或者非織 布纖維710的方式組成。該等纖維71〇可由一前述之導電材 料形成或塗覆之。非織布纖維的範例包括紡黏(spun_b〇nd) 或熔喷(melt blown)聚合物,以及其他不織布織品。 40 200520893 該導電研磨部310包括一由導電材料組成之上方層 7 94。該上方層794包括一與下方層792相對之研磨表面 796。該上方層794$具有足夠厚度以將底下之下方層792 的不平整處平順化’藉以提供平坦及平整之研磨奉面796 以於製程期間接觸該基材。於一實施例中,該研磨表面7 9 6 具有一範圍小於或等於約1 mm之厚度,以及範圍小於或等 於約500公釐之表面粗糙度。The conductive bonding agent and the bonding agent between the metal foil compounds of the conductive foil may also be formed by a plurality of perforations (diameter or width of about 0 · 丨 μιη and about 1 mm) on the metal foil, or by the A conductive primer is applied between the metal foil and the conductive bonding agent to strengthen it. The conductive primer may be the same material as the aforementioned conductive primer for webs. Figure 7E is a cross-sectional view of another embodiment of a conductive fabric or fabric 798 that can be used to form the lower layer 792 of the conductive abrasive portion 310, which is one of the abrasives 205. The conductive fabric or fabric may be composed of interwoven or non-woven fibers 710. The fibers 710 may be formed or coated with a previously mentioned conductive material. Examples of non-woven fibers include spunbond or melt blown polymers, and other non-woven fabrics. 40 200520893 The conductive abrasive portion 310 includes an upper layer 7 94 composed of a conductive material. The upper layer 794 includes an abrasive surface 796 opposite the lower layer 792. The upper layer 794 $ has a sufficient thickness to smooth out the irregularities of the lower layer 792 to provide a flat and flat abrasive surface 796 to contact the substrate during the manufacturing process. In one embodiment, the abrasive surface 7 9 6 has a thickness in a range of less than or equal to about 1 mm, and a surface roughness in a range of less than or equal to about 500 mm.

該上方層7 9 4可由任一導電材料組成。於一實施例中, 該上方層794係由一軟性材料(例如金、錫、鈀、鈀錫合金、 鉑或鉛及其他較銅為軟之陶瓷複合物、導電金屬、合金) 所形成。該上方層794可選擇性的包括前述黏結材料於其 中,以幫助研磨期間移除該基材之金屬表面上的鈍態層。The upper layer 7 9 4 may be composed of any conductive material. In one embodiment, the upper layer 794 is formed of a soft material (such as gold, tin, palladium, palladium-tin alloy, platinum or lead, and other ceramic composites, conductive metals, and alloys that are softer than copper). The upper layer 794 may optionally include the aforementioned bonding material therein to help remove the passive layer on the metal surface of the substrate during grinding.

或者,該上方層794可由一非導電性材料組成,其係實 質覆蓋該導電研磨部310但留下該導電研磨部之至少一部 份,以使該導電研磨部3 10可電性連接該上方層794上一進 行研磨之基材。於上述之配置中,該上方層794可幫助減少 刮痕並避免該導電部3 1 〇於研磨期間進入任一暴露出的特 徵中。一非導電性上方層794可包括數個穿孔,以讓該導電 研磨部3 1 0維持暴露。 第7F圖係一具有一窗口 7〇2形成其中之研磨物205的 另一實施例。該窗口 702係經配置以讓一感應器704定位於 該研磨物205下,以感應研磨效能之公制指標(metric indicative)。例如,該感應器7〇4可為一渦電流感應器或一 41 200520893 干涉計或其他感應器·。於一實施例中,可產生一準直光束 之該干涉計感應器於製程期間係射於該進行研磨之基材 11 4的一側。反射訊號間之干涉即為該進行研磨之材料層厚 度的指標。可增益於本案之一感應器係描述於Birang等人 於1999年4月13曰所申請之美國專利第5,893,796號中,其 全文係合併於此以供參考。Alternatively, the upper layer 794 may be composed of a non-conductive material, which substantially covers the conductive polishing portion 310 but leaves at least a part of the conductive polishing portion so that the conductive polishing portion 3 10 can be electrically connected to the upper A ground substrate is placed on layer 794. In the above configuration, the upper layer 794 can help reduce scratches and prevent the conductive portion 3 1 0 from entering any of the exposed features during grinding. A non-conductive upper layer 794 may include several perforations to keep the conductive abrasive portion 3 10 exposed. Fig. 7F is another embodiment of a grinding object 205 having a window 702 formed therein. The window 702 is configured to position a sensor 704 under the grinding object 205 to sense a metric indicator of the grinding performance. For example, the sensor 704 may be an eddy current sensor or an interferometer or other sensor. In an embodiment, the interferometer sensor that can generate a collimated light beam is irradiated on one side of the substrate 11 to be polished during the manufacturing process. The interference between the reflected signals is an indicator of the thickness of the material layer to be ground. One of the sensors that is gainable in this case is described in U.S. Patent No. 5,893,796 filed by Birang et al. On April 13, 1999, the entire contents of which are incorporated herein by reference.

該窗口 702包括一流體栅706,其可實質避免製程流體 由接觸該遮罩該感應器704之圓盤206之區域流出。該流體 柵706—般係經選擇為可對穿透之訊號呈穿透式(例如,具 有最小或沒有影響或干涉)。該流體栅706可為一分離元 件,例如一塊耦接至該窗口 702内之研磨物205的聚氨酯, 或可為一或多層包括該研磨物205,例如,一片位於該導電 部3 1 0或該物支撐部、或副襯墊部3 2 0下方之聚酯薄膜片。 或者,流體柵706可設於位於該研磨物205及該圓盤206間之 該等層間,例如電極204或其他層。於另一替代配置中,該 流體栅706可設於一與該窗口 702(其中設有感應器)對準之 通道708中。於該等實施例中,該導電部31〇至少包括數層’ 例如一上方層794及一下方層792,該穿透材料706可設於至 少一包括該導電部310之層中,如第7F圖所示。應可理解 的是,該導電研磨物之其他配置(包括此處所述之該等實施 例及其他配置)皆可設計包括一窗口。 研磨表面中之導電元件 42 200520893 於另一態樣中,此處所述之該導電纖維及填料可用於 形成有區別的導電元件,其等係設於一研磨材料中以形成 本發明之導電研磨物205。該研磨材料可為一習知研磨材料 或導電研磨材料,例如一置於前文所述之聚合物中之導電 纖維或填料的導電組成物。該導電元件之表面可形成一具 有研磨物之表面的平面,或可延伸於該研磨物表面之一平 面上。導電元件可延伸於該研磨物之表面上幾近約5公董 處。 雖然下文所闡示的是使用在該研磨材料中具有一特定 結構及配置之導電元件,但本發明亦可涵蓋各個導電纖維 及填料以及由其製成之材料,例如織品,其也可視為導電 元件。此外,雖然此處並未圖示,但下文所述之研磨物描 述可包括具有前述穿孔以及溝槽圖案之研磨物(圖示於第4 及第6圖),其等圖案配置均可與此處所述之該導電元件相 結合,並於下文詳述之。 第8A至8B圖係描述一研磨物8〇〇之一實施例之一上方 及戴面概要圖,該研磨物800中設有導電元件。該研磨物8〇〇 一般包含一本體810,其具有一研磨表面820用以於製程期 間接觸該基材。該本體810典型至少包含一介電或聚合物材 料’例如介電聚合物材料(如聚氨酯)。 該研磨表面820具有一或多個開口、溝槽、溝渠或凹坑 8 30形成其中以至少部分承接導電元件840。該導電元件840 一般可作設置以具有一共平面之接觸表面850或延伸於一 43 200520893 由該研磨表面82 0所界定之平面上方。該接觸表面85〇 一般 係經配置(如設有一撓曲、彈性、可彎曲或壓塑性表面)以 於接觸該基材時能與該導電元件84〇有最大的電性接觸。於 研磨期間,所用之接觸壓力可迫使該接觸表面85〇進入一與 該研磨表面820共平面之位置。 該本體810—般係經製造使之可藉數個形成其中之穿 孔860滲透至電解液。該研磨物8〇〇可具有一穿孔密度,其 ;丨約該研磨物810之表面區域約2〇%至8〇%間以提供足夠電 解液流動,以幫助由該基材表面之均勻陽極溶解。 該本體8 1 〇 — 1包括一介電材料,例如前文所述之習知 研磨材料。該等形成於本體81〇中之凹坑83〇一般係配置以 能於製程期間維持該導電元件84〇,且因此可在形狀及方位 上作變化。於第8A圖所示之實施例中,該等凹坑83〇為數 個具有一矩形交叉段(設置遍於該研磨表物表面)並於該研 磨物800中心形成一交互連結之「X」或交叉圖案87〇的溝 槽。本發明亦涵蓋其他的交叉段,例如反梯形及圓曲形, 其中該溝槽可接觸該基材表面(如前文所述)。 或者,該等凹坑83 0(以及設於其中之導電元件84〇)可 以不規則間距作設置,也可設呈徑向、橫向或垂直等方位, 也可為線性、曲線、同中心、内捲曲線或其他交叉段區域。 第8C圖係一連串各個導電元件84〇徑向設於該本體 8 10中之上方概要圖,各元件840係物理或電性地藉一間距 物875分隔。該間距物875可為用於該等元件之介電研磨材 44 200520893 料-或一介電内連線的一部份,例如一塑膠内連線。或者, 該間距物8 75可為一段研磨物,其缺少該研磨材料或導電元 件840以避免該導電元件84〇間形成物理接觸。於上述一分 隔元件配置中,各導電元件840可藉一導電路徑89〇(例如一 金屬線)個別連接至一電源供應器。 再參照回第8A及8B圖,一般係將該導電元件84〇設於 本體810中以形成該研磨物之一主要電阻或約2〇ω _cm或 更低的主要表面電阻。於該研磨物之一態樣中,該研磨物 之電阻約為2Ω -cm或更低。該導電元件84〇一般具有於持 續電場下不發生降解之機械特性,並可抵抗在酸性或鹼性 電解液中的降解。該導電元件84〇可藉安裝、夾持、黏結劑 或其他任何方法維持於該等凹坑83〇中。 於一實施例中,該導電元件840係具有充分撓曲、彈性 或可f曲〖生,以於製私期間維持該接觸表面8 5 〇及該基材間 之電性接觸。《夠的撓曲、彈性或可彎曲性材料對導電元 件840而言,與該研磨材料相較下具有類似之蕭式硬度〇約 100或更小之硬度。而對聚合物材料而言,具有類似蕭式硬 度D約80或更小之硬度的導雷齐彼 %反幻导電7L件840亦可使用。一撓曲材 料’例如可t曲或弯折之纖維材料也可作為導電元件84〇。 該導電元件840可較研麼; 所曆材枓更具順應性,以避免該導電元 件840於研磨期間所引起的高局部性壓力。 於第8 Α及8 Β圖所示之實祐如由 ,1 <貫施例中,該導電元件84〇係嵌 埋至一置放於元件支撐部或副墊 坚S15上之研磨表面81〇。該 45 200520893 等穿孔860係穿通研磨表面81 〇及環繞導電元件840之該物 支撐部8 1 5。 該導電元件84〇之一範例包括塗覆一導電材料或導電 填料與聚合物材料相混之介電或導電纖維,例如聚合物基 黏結劑,用以製造前述之導電(且抗磨損)複合物。該導電 元件840亦可包括導電聚合物材料或前述其他導電材料以_ 改善電特十生。例士 "該導電元件至少包括一導電環氧化物 之複合物以及一至少包含塗覆以金及碳或石墨填料於尼龍 纖維上(諸如於該尼龍纖維上塗覆約〇 ^爪鈷、鋼或鎳,以 及約2μιη金於尼龍纖維上)的導電纖維,藉以改善該複合物 的導電性,且前述該等係設於聚氨酯本體中。 第8D圖係一研磨物800之另一實施例的截面概要圖, 該研磨物800具有數個導電元件設於其中。該導電元件84〇 可一般设以具有一共平面之接觸表面,或延伸於該研磨表 面820所界定之一平面上。該導電元件84〇可包括導電織品 700(如前文所述)並將之放置、封裝或纏繞於導電組件845 上。或者各個導電纖維及/或填料可放置、封裝或纏繞於該 導電組件845上。該導電元件845可至少包括一金屬,例如 一前文所述之貴金屬,或其他適用於電研磨製程之導電材 料,例如銅。該導電元件840也可包括該織品及前述黏結材 料之複合物,其中該織品係形成該導電元件840之外接觸 部,而該黏結劑一般係形成内支撐結構。該導電元件84〇 也可包括一中空管,其具有一矩形截面區域,其中管壁係 46 200520893 以堅硬導電織品700及一前述之結合劑形成之。The window 702 includes a fluid grid 706 that substantially prevents process fluid from flowing out of the area contacting the disk 206 that covers the sensor 704. The fluid grid 706 is generally selected to be transmissive (eg, with minimal or no effect or interference) to the signal that penetrates. The fluid grid 706 may be a separate element, such as a piece of polyurethane coupled to the abrasive material 205 in the window 702, or may include one or more layers including the abrasive material 205, such as a piece located on the conductive portion 3 1 0 or Polyester film sheet under the object support part or sub-pad part 3 2 0. Alternatively, the fluid grid 706 may be disposed between the layers between the abrasive 205 and the disc 206, such as the electrode 204 or other layers. In another alternative configuration, the fluid grid 706 may be disposed in a channel 708 aligned with the window 702 (with a sensor therein). In these embodiments, the conductive portion 3110 includes at least several layers, such as an upper layer 794 and a lower layer 792, and the penetrating material 706 may be provided in at least one layer including the conductive portion 310, as in Section 7F. As shown. It should be understood that other configurations of the conductive abrasive (including the embodiments and other configurations described herein) may be designed to include a window. Conductive element in a lapping surface 42 200520893 In another aspect, the conductive fibers and fillers described herein can be used to form differentiated conductive elements, which are provided in an abrasive material to form the conductive abrasive of the present invention物 205。 205. The abrasive material may be a conventional abrasive material or a conductive abrasive material, such as a conductive composition of conductive fibers or fillers placed in a polymer as described above. The surface of the conductive element may form a plane having a surface of an abrasive object, or may extend on a plane of the surface of the abrasive object. The conductive element may extend on the surface of the abrasive object at approximately 5 mm. Although the following illustrates the use of conductive elements with a specific structure and configuration in the abrasive material, the present invention also covers various conductive fibers and fillers and materials made from them, such as fabrics, which can also be considered conductive element. In addition, although it is not shown here, the description of the abrasive article described below may include an abrasive article with the aforementioned perforation and groove patterns (illustrated in Figures 4 and 6), and other pattern configurations can be related to this. The conductive elements described herein are combined and described in detail below. 8A to 8B are schematic diagrams illustrating an upper surface and a wearing surface of one embodiment of an abrasive article 800. The abrasive article 800 is provided with conductive elements. The abrasive article 800 generally includes a body 810 having a grinding surface 820 for contacting the substrate during the manufacturing process. The body 810 typically includes at least a dielectric or polymer material ' such as a dielectric polymer material (e.g., polyurethane). The abrasive surface 820 has one or more openings, grooves, trenches or dimples 8 30 formed therein to at least partially receive the conductive element 840. The conductive element 840 may be generally provided to have a coplanar contact surface 850 or to extend above a plane defined by the grinding surface 8200. The contact surface 85 ° is generally configured (for example, provided with a flexible, elastic, bendable, or compressive plastic surface) so as to have the largest electrical contact with the conductive element 84 ° when contacting the substrate. During grinding, the contact pressure used can force the contact surface 850 into a position coplanar with the grinding surface 820. The body 810 is generally manufactured so that it can penetrate into the electrolyte through several through holes 860 formed therein. The abrasive article 800 may have a perforation density, which is about 20% to 80% of the surface area of the abrasive article 810 to provide sufficient electrolyte flow to help uniform anodic dissolution from the surface of the substrate. . The body 8 1 0 — 1 includes a dielectric material, such as the conventional abrasive material described above. The dimples 83 formed in the body 81o are generally configured to maintain the conductive element 84o during the manufacturing process, and thus can be changed in shape and orientation. In the embodiment shown in FIG. 8A, the dimples 830 are a number of "X" or a plurality of rectangular cross sections (disposed on the surface of the abrasive surface) and forming an interactive link at the center of the abrasive 800 The grooves of the cross pattern 87 °. The invention also covers other cross sections, such as inverse trapezoids and rounded shapes, where the grooves can contact the surface of the substrate (as described above). Alternatively, the dimples 83 0 (and the conductive elements 84 0 provided therein) can be arranged at irregular intervals, or they can be set in a radial, lateral or vertical orientation, or they can be linear, curved, concentric, internal Curly curve or other intersecting segment area. FIG. 8C is a series of schematic diagrams of a series of conductive elements 8440 arranged radially above the body 810. Each element 840 is physically or electrically separated by a space 875. The spacer 875 may be a dielectric abrasive material for these components or a part of a dielectric interconnect, such as a plastic interconnect. Alternatively, the spacer 8 75 may be a segment of abrasive material, which lacks the abrasive material or the conductive element 840 to prevent physical contact between the conductive elements 840. In the above-mentioned separation element configuration, each conductive element 840 can be individually connected to a power supply by a conductive path 890 (such as a metal wire). Referring back to FIGS. 8A and 8B, the conductive element 84 is generally provided in the body 810 to form one of the major resistances of the abrasive or a major surface resistance of about 20 ω_cm or lower. In one aspect of the abrasive, the resistance of the abrasive is about 2Ω-cm or less. The conductive element 840 generally has a mechanical property that does not degrade under a continuous electric field, and can resist degradation in an acidic or alkaline electrolyte. The conductive element 84 can be maintained in the recesses 83 by mounting, clamping, adhesive or any other method. In one embodiment, the conductive element 840 has sufficient flexibility, elasticity, or flexibility to maintain electrical contact between the contact surface 850 and the substrate during the manufacturing process. The sufficient deflection, elastic or bendable material has a similar hardness to the conductive material 840 as compared with the abrasive material, and a hardness of about 100 or less. For polymer materials, a conductive anti-reflection conductive 7L piece 840 with a hardness similar to Xiao hardness D of about 80 or less can also be used. A flexible material, such as a fibrous material that can be bent or bent, can also be used as the conductive member 84. Can the conductive element 840 be more compliant? The material is more compliant to avoid the high local pressure caused by the conductive element 840 during grinding. As shown in Figures 8 Α and 8 Β, the conductive element 84 is embedded in an abrasive surface 81 placed on the element support portion or the sub-pad S15 in the embodiment. 〇. The 45 200520893 and other perforations 860 pass through the grinding surface 810 and the support portion 8 1 5 surrounding the conductive element 840. An example of the conductive element 840 includes coating a conductive material or a conductive filler with a dielectric or conductive fiber mixed with a polymer material, such as a polymer-based adhesive, for manufacturing the aforementioned conductive (and anti-wear) composite. . The conductive element 840 may also include a conductive polymer material or the aforementioned other conductive materials to improve electrical characteristics. Example: The conductive element includes at least a composite of conductive epoxide and at least one coated with gold and carbon or graphite filler on a nylon fiber (such as coating the nylon fiber with about ^ claw cobalt, steel or Nickel, and conductive fibers (about 2 μm gold on nylon fibers) to improve the conductivity of the composite, and the foregoing are set in the polyurethane body. FIG. 8D is a schematic cross-sectional view of another embodiment of an abrasive article 800 having a plurality of conductive elements disposed therein. The conductive element 84 may be generally provided with a coplanar contact surface, or may extend on a plane defined by the polishing surface 820. The conductive element 84 may include a conductive fabric 700 (as described above) and place, package, or wrap it around the conductive component 845. Alternatively, various conductive fibers and / or fillers can be placed, encapsulated, or wrapped around the conductive component 845. The conductive element 845 may include at least one metal, such as a noble metal as described above, or other conductive materials suitable for electro-grinding processes, such as copper. The conductive element 840 may also include a composite of the fabric and the aforementioned bonding material, wherein the fabric forms the outer contact portion of the conductive element 840, and the adhesive generally forms an internal support structure. The conductive element 84 may also include a hollow tube having a rectangular cross-sectional area, wherein the tube wall system 46 200520893 is formed of a hard conductive fabric 700 and a binding agent as described above.

一連接器890係用以將該導電元件84〇耦接至一電源 (未示出),以於製程期間電性偏壓該導電元件84〇。該連接 器890—般係一金屬線、帶或其他與製程流體相容之導電 器,或具有一覆蓋層或可保護該連接器8 90不受製程液體影 響的塗層。該連接器890可藉壓模、焊接、疊卡、銅悍 (brazing)、夾礙、捲邊、鉚接、固定、導電性黏結劑或藉 其他方式或元件耦接至該導電元件840。可用於連接器89〇 中之材料範例包括絕緣銅、石墨、鈦、鉑、合、τ # 奶、不鏽 鋼以及HASTELOY⑧導電材料及其他合適材料。 環繞該連接器890之塗層可包括聚合物,例如碳敦化合 物、聚氣乙烯(PVC)以及聚亞醯胺。於第8A圖所示之實施 例中’一連接器890可以該研磨物800之邊緣部耗接至各導 電元件840。或者,該等連接器890可設穿經該研磨物8〇〇 之本體810。於另一實施例中,該連接器89〇可耦接至—嗖A connector 890 is used to couple the conductive element 840 to a power source (not shown) to electrically bias the conductive element 840 during the manufacturing process. The connector 890 is generally a metal wire, tape, or other conductive fluid-compatible conductor, or has a cover or coating that protects the connector 8 90 from the effects of process liquids. The connector 890 may be coupled to the conductive element 840 by stamping, welding, stacking, brazing, clamping, crimping, riveting, fixing, conductive adhesive, or other means or components. Examples of materials that can be used in the connector 89 ° include insulated copper, graphite, titanium, platinum, alloy, τ #milk, stainless steel, and HASTELOY⑧ conductive materials and other suitable materials. The coating surrounding the connector 890 may include polymers such as carbon compounds, polyvinyl chloride (PVC), and polyimide. In the embodiment shown in Fig. 8A, a 'connector 890 can be connected to each conductive element 840 by the edge portion of the abrasive article 800. Alternatively, the connectors 890 may be provided through the body 810 of the abrasive object 800. In another embodiment, the connector 89 can be coupled to— 嗖

於谷肩槽之導電網柵·(未圖示)及/或通過該本體以電性 耦接該導電元件840。 第9A圖係描述一研磨材料900之另一實施例。該研磨 材料900包括一本體9〇2,其具有一或多個設於一研磨表面 906且至少部分導電之元件904。該導電元件9〇4一般包括複 數可挽曲或可伸縮、且適於在製程同時接觸一基材表面之 纖維、線繩及/或可彎曲指狀物。該等纖維係由至少部分導 電之材料所組成,例如一由塗覆一導電材料之介電材料所 47 200520893 組成之纖維。該纖維在自然狀態下也可為固態或中空,以 降低或增加纖維之順應性或彎曲性。The conductive mesh grid (not shown) in the valley shoulder groove is electrically coupled to the conductive element 840 through the body. FIG. 9A illustrates another embodiment of an abrasive material 900. The abrasive material 900 includes a body 902 having one or more elements 904 disposed on an abrasive surface 906 and at least partially conductive. The conductive element 904 generally includes a plurality of fibers, cords, and / or bendable fingers that are bendable or retractable and are suitable for contacting a substrate surface simultaneously during the manufacturing process. These fibers are composed of a material that is at least partially conductive, for example, a fiber composed of a dielectric material coated with a conductive material 47 200520893. The fiber may also be solid or hollow in the natural state to reduce or increase the compliance or bendability of the fiber.

於第9 A圖所示之實施例中,該導電元件9 04係數個耦 接至一基座909之導電副元件913。該導電副元件913包括前 述至少部分導電之纖維。該副元件9 1 3之範例包括一塗覆金 之尼龍纖維或碳纖維(如前文所述)。該基座909也·包括一導 電材料且係耦接至一連接器990。該基座909也可以一導電 材料(例如銅)層塗覆之,其於研磨期間可由該研磨墊物分 解出’且一般認為該導電材料層會延長該導電纖維之製程 時間。 該導電元件904—般係置於形成在該研磨表面9〇6内之 凹坑908中。該導電元件9〇4被定向為相對於該研磨表面9〇6 夾〇度至9 0度間。於該等實施例中,該導電元件9 〇 4之方位 係垂直該研磨表面906,該導電元件904可部分設於該研磨 表面9 0 6上。In the embodiment shown in FIG. 9A, the conductive elements 904 are coupled to the conductive sub-element 913 of a base 909. The conductive sub-element 913 includes the aforementioned at least partially conductive fibers. Examples of the sub-element 9 1 3 include a gold-coated nylon fiber or a carbon fiber (as described above). The base 909 also includes a conductive material and is coupled to a connector 990. The base 909 can also be coated with a layer of conductive material (such as copper), which can be dissociated by the polishing pad during grinding 'and it is generally believed that the layer of conductive material will prolong the processing time of the conductive fiber. The conductive element 904 is generally placed in a recess 908 formed in the ground surface 906. The conductive element 904 is oriented between 0 ° and 90 ° with respect to the ground surface 906. In these embodiments, the orientation of the conductive element 904 is perpendicular to the abrasive surface 906, and the conductive element 904 may be partially disposed on the abrasive surface 906.

該等凹i几908具有一較低安裝部91〇及一上方之空隙 912。該安裝部910係經配置以承接該導電元件904之該基 9〇9’並❹裝m㈣或其他方式料該導電元 =該空陳部912係設於該凹坑9〇8與該研磨表面_相 處。該空隙部912 一般在截面上大於安裝部910,以讓該 電元件904在接觸一基 以讓該 X ^ 、考曲且同時研磨,而無需設 該基材及該研磨表面9〇6間。 第9 B圖传;^ ;七 圖係…研磨物900之另一實施例,其具有 48 200520893 導電表面940及數個分離之導電元件920形成其中。該導電 元件920至少包括數個以一導電材料塗覆之介電材料纖 維,其等係垂直置於該研磨物205之導電表面940且彼此係 水平設置。該研磨物900之導電元件920—般係被定向以相 對於一導電表面940夾0度至90度,且可以相對於一與該導 電表面940正交的線被傾斜於任一極的方向^^該導電元件 9 20係遍及於該研磨墊之長度上而形成(如第9B圖所示),或 可僅置於該研磨墊之所選區域中。該研磨表面上該導電元 件920之接觸高度可幾近約5公釐。包括該導電元件92〇之該 材料直徑係介約1密爾(千分之一英吋)及約j 〇密爾間。該研 磨表面上之高度及該導電元件92〇之直徑可依據所執行之 研磨製程作變化。 該導電元件920具有足夠撓性或彈性以於接觸壓力下 變形,同時維持與一基材表面之電性接觸,藉以降低或最 小化該基材表面之到痕。於第9八及9B圖所示之實施例中, 該基材表面可僅接觸該研磨物2〇5之導電元 密係經定位以於該研磨物2G5表面上提供均勻之= 式蛀人如 ,,,-〜"电秄科、黏結劑 次、、,口合劑黏附至該導 _ ^ ^ 介…;^導電表面。該非導電性勒結劑可提供-"電塗層予該導電表面94〇,以 μ ^ ^ , 通导電表面940及任何環 邊之電解液間提供—電化 ^ 形研磨W ^觸表面940可為圓 墊或線性網狀或帶狀 呵微物205。一系列之穿 49 200520893 孔(未圖示)可譟於該導電表面940中以提供電解液流通其 間。 雖然此處並未圖示,然該導電板可設於習知研磨材料 之一支撐墊上以定位及處理一旋轉或線性研磨平台上知研 磨物900。The cavity 908 has a lower mounting portion 910 and an upper gap 912. The mounting portion 910 is configured to receive the base 909 ′ of the conductive element 904 and to install the base or other materials. The conductive element = the hollow portion 912 is provided in the recess 908 and the polished surface. _get along. The gap portion 912 is generally larger in cross section than the mounting portion 910, so that the electrical component 904 contacts a base to allow the X ^, Kouqu, and the grinding at the same time, without the need to provide the substrate and the grinding surface 906. Picture 9B; ^; Figure 7 is another embodiment of abrasive article 900, which has 48 200520893 conductive surface 940 and several separated conductive elements 920 formed therein. The conductive element 920 includes at least several dielectric material fibers coated with a conductive material, which are disposed vertically on the conductive surface 940 of the abrasive object 205 and are horizontally arranged with each other. The conductive element 920 of the abrasive article 900 is generally oriented to be between 0 and 90 degrees with respect to a conductive surface 940, and may be tilted in the direction of any pole relative to a line orthogonal to the conductive surface 940 ^ The conductive element 9 20 is formed over the length of the polishing pad (as shown in FIG. 9B), or it can be placed only in a selected area of the polishing pad. The contact height of the conductive element 920 on the abrasive surface may be approximately 5 mm. The diameter of the material including the conductive element 92 is between about 1 mil (one thousandth of an inch) and about j mil. The height of the grinding surface and the diameter of the conductive element 92 may be changed according to the grinding process performed. The conductive element 920 is flexible or elastic enough to deform under contact pressure, while maintaining electrical contact with the surface of a substrate, thereby reducing or minimizing traces on the surface of the substrate. In the embodiment shown in Figures 98 and 9B, the surface of the substrate can only contact the conductive element of the abrasive object 205. The conductive element is positioned to provide a uniform surface on the surface of the abrasive object 2G5. ,,, ~~ " Electrococcalidae, adhesives ,,, and adhesives are adhered to the conductive surface ^ ^ 介 ...; ^ conductive surface. The non-conductive cleavage agent can provide an "electric coating" to the conductive surface 94. It is provided in μ ^^ through the conductive surface 940 and any electrolyte on the edge of the ring-galvanic grinding W ^ contact surface 940 It may be a circular pad or a linear mesh or ribbon-shaped micro-object 205. A series of perforated 49 200520893 holes (not shown) can be noisy in the conductive surface 940 to provide electrolyte flow between them. Although not shown here, the conductive plate may be disposed on a support pad of a conventional abrasive material to position and process the abrasive article 900 on a rotary or linear polishing platform.

第10A圖係描述一由導電元件1(K)4組成之研磨物1000 之一實施例的概要立體圖。各導電元件1〇〇4 一般包括一包 含一迴圈或環1006其具有設置在形成於該研磨表面1〇24上 的凹坑1012内之一第一端1〇08及一第二端1〇1〇。每一導電 元件10 04可耦合至一接合導電元件用以形成多個延伸於該 研磨表面1024的上方的迴圈10〇6。 在圖示於第10Α圖的實施例中,每一迴圈1006都是由 一塗覆以導電材料之纖維所所製成的,且藉由一黏附在該 凹坑1012内的繫線基座1〇14所連結。該迴圈1〇〇6之一範例 係一塗覆以金之尼龍纖維。FIG. 10A is a schematic perspective view illustrating an embodiment of an abrasive object 1000 composed of a conductive element 1 (K) 4. Each conductive element 1004 generally includes a first end 1008 and a second end 10 including a loop or ring 1006 provided in a recess 1012 formed on the abrasive surface 1024. 1〇. Each conductive element 10 04 can be coupled to a bonding conductive element to form a plurality of loops 1006 extending above the abrasive surface 1024. In the embodiment shown in FIG. 10A, each loop 1006 is made of a fiber coated with a conductive material, and a tether base is stuck in the recess 1012. Linked by 1014. An example of the loop 1006 is a nylon fiber coated with gold.

在該接觸表面上方之迴圈1006的接觸高度係介於約 〇 · 5公t至約2公釐之間且包含該迴圈在内之材料直徑係介 於約1密爾(千分之一英寸)至約5〇密爾之間。該繫線基座 1014可以是一導電材質,如鈦、銅、鉑或鍍銅之鉑。該繫 線基座1014亦可被鍍上一層導電材質,如銅,其可在研磨 期間從研磨塾分解出。咸信於該繫線基座1〇14上所使用之 導電材料層可作為一犧牲層,用以分解該下方迴圈1〇〇6材 料或繫線基座101 4材料以延長該導電元件1004的壽命。該 50 200520893 等導電元件1004可被定向以相對於一研磨表面1024夾〇度 至9〇度且可相對於一與該導電表面1024正交的線被傾斜於 任一極的方向上。該導電元件1〇〇4係藉一電連接器1 030耦 接至一電源。 第10Β圖係描述一由導電元件1〇〇4組成之研磨物1⑽〇 之另一實施例之概要立體圖。該導電元件1〇〇4至少包括一 金屬線之單數線圈1〇〇5,該金屬線係由一塗覆以導電材料 之纖維(如前文所述)所組成。該線圈1 005係耦接至一設於 基座1014上之導電組件1007。該線圈1005可環繞該導電 、、且件1 0 0 7 $衣繞該基座1 0 1 4或黏附至該基座1 〇 1 4表面。該 導電條可至少包括一導電材料,例如金,且一般包括一不 易化子反應之導電材料,例如金或翻,以及用於一研磨製 程中之任何電解液,或者,犧牲材料層1〇〇9(例如銅)可設 於該基座1014上。該犧牲材料層1〇〇9一般係一化學反應性 較該導電組件1 007為高之材料,例如銅,藉以於電研磨期 間、或於研磨製程之陽極分解期間優先移除化學反應性材 料(與導電組件1 0 0 7及線圈1 〇 〇 5之材料相比)。該導電組件 1007可藉一電連接器1〇30耦接至一電源。 一偏壓件可被設置在該導電元件與本體之間以提供一 偏壓迫使導電元件遠離該本體並於研磨期間接觸一基材表 面。該偏壓件1 〇1 8之範例係圖示於第1 〇 Β圖。然而本發 明亦涵蓋前文所述之該等導電元件,例如於第8 A-8D、9Α、 10A-10D圖所示可使用一偏壓件。該偏壓件是由一彈性物 51 200520893 質或裝置所構成且可以是一壓縮彈簧、一扁平彈簧、線圈 彈簧、一發泡的聚合物如發泡的聚胺基甲酸酯(如, PORON®聚合物)、一彈性體、一氣泡或其它可迫擠該導電 元件的元件或裝置。該偏壓件也可為撓性或彈性材料,例 如撓性泡棉或氣充式軟管,其可用以偏壓該導電元件以靠 抵及改善研磨時之基材表φ。該經偏壓之導電元件可形成 一具有研磨物表面之平面或可延伸於該研磨物表面之一平 面上方。The contact height of the loop 1006 above the contact surface is between about 0.5 mm to about 2 mm and the diameter of the material including the loop is between about 1 mil (one thousandth) Inches) to about 50 mils. The tether base 1014 may be a conductive material, such as titanium, copper, platinum, or copper-plated platinum. The wire base 1014 can also be plated with a conductive material, such as copper, which can be decomposed from the grindstone during grinding. The conductive material layer used by Xianxin on the line base 1014 can be used as a sacrificial layer to decompose the lower loop 1006 material or the line base 101 4 material to extend the conductive element 1004. Life. The 50 200520893 and other conductive elements 1004 can be oriented to be between 0 ° and 90 ° with respect to a ground surface 1024 and can be tilted in the direction of either pole relative to a line orthogonal to the conductive surface 1024. The conductive element 1004 is coupled to a power source through an electrical connector 1 030. FIG. 10B is a schematic perspective view illustrating another embodiment of an abrasive article 1⑽0 composed of a conductive element 1004. The conductive element 1004 includes at least a singular coil 1005 of a metal wire, which is composed of a fiber coated with a conductive material (as described above). The coil 1 005 is coupled to a conductive component 1007 provided on a base 1014. The coil 1005 can surround the conductive substrate, and a piece of clothing can be wound around the base 1014 or adhered to the surface of the base 104. The conductive strip may include at least a conductive material, such as gold, and generally includes a conductive material that does not facilitate chemical reactions, such as gold or titanium, and any electrolyte used in a grinding process, or a sacrificial material layer 100. 9 (such as copper) may be provided on the base 1014. The sacrificial material layer 1009 is generally a material having a higher chemical reactivity than the conductive component 1007, such as copper, so that the chemically reactive material is preferentially removed during the electric grinding or during the anode decomposition of the grinding process ( Compared with the material of conductive component 1 0 07 and coil 1 05). The conductive component 1007 can be coupled to a power source through an electrical connector 1030. A biasing member may be disposed between the conductive element and the body to provide a biasing force to force the conductive element away from the body and contact a substrate surface during grinding. An example of the biasing member 108 is shown in FIG. 10B. However, the present invention also covers the aforementioned conductive elements. For example, a biasing member can be used as shown in Figures 8 A-8D, 9A, 10A-10D. The biasing member is made of an elastomer 51 200520893 substance or device and can be a compression spring, a flat spring, a coil spring, a foamed polymer such as a foamed polyurethane (eg, PORON ® polymer), an elastomer, a bubble, or other component or device that can squeeze the conductive element. The biasing member can also be a flexible or elastic material, such as a flexible foam or an air-filled hose, which can be used to bias the conductive element to resist and improve the substrate surface φ during grinding. The biased conductive element may form a plane having a surface of the abrasive article or may extend above a plane of the surface of the abrasive article.

第10C圖顯示一研磨物1〇〇〇之另一實施例的概要立 體圖,該研磨物1000具有數個導電元件1004,其係以由 該基材中心至邊緣之徑向圖案作設置。該等導電元件可相 對於彼此被間隔15度、30度、45度、60度及90度,或 它們的組合。該等導電元件1 〇〇4 —般係間隔開來用以提供 一均勻的電流或電源以研磨該基材。該等導電元件可被進 一步間隔開以防止彼此接觸。該本體1 0 2 6的一介電研磨物 質的一楔形部分1 004可被建構成電氣地隔離該等導電元 件1004。一間距物或下凹區域1〇60亦被形成在該研磨物 中用來將導電元件1004彼此間隔開來。導電元件1004可 以如第1 〇A圖所示的為迴圈的形式或如第9B圖所示的垂 直延伸的纖維。 第10D圖係描述第i〇A圖之該導電元件1〇〇4之一替代 實施例的概要立體圖。該導電元件1 004至少包含係交織導 電纖維1 〇 〇 6之一織網或織品(如前所述),其具有一形成於 該研磨表面1024中設於凹槽丨〇12内之第一端及第二端 52 200520893 1010’以形成一用以接觸基材之連續導電表面。該織網或 織品可為一或多層交織纖維。該至少包含導電元件1〇〇4之 織網或織品於第1 〇D圖中係以一單一層圖示。該導電元件 10 04可耦接至一導電基座1〇14,且可延伸於該研磨表面 1024上方’如第i〇A圖所示。該導電元件10 〇4可藉數個連 接至該導電基座1014之電連接器1〇30耦接至一電源。Fig. 10C shows a schematic perspective view of another embodiment of an abrasive article 1000. The abrasive article 1000 has a plurality of conductive elements 1004 arranged in a radial pattern from the center to the edge of the substrate. The conductive elements may be spaced 15 degrees, 30 degrees, 45 degrees, 60 degrees, and 90 degrees relative to each other, or a combination thereof. The conductive elements 1004 are generally spaced apart to provide a uniform current or power source to grind the substrate. The conductive elements can be further spaced to prevent contact with each other. A wedge-shaped portion 1 004 of a dielectric abrasive substance of the body 10 2 6 can be constructed to electrically isolate the conductive elements 1004. A spacer or recessed area 1060 is also formed in the abrasive object to space the conductive elements 1004 from each other. The conductive element 1004 may be in the form of a loop as shown in FIG. 10A or a vertically extending fiber as shown in FIG. 9B. Fig. 10D is a schematic perspective view illustrating an alternative embodiment of the conductive element 1004 of Fig. 10A. The conductive element 1 004 includes at least one woven mesh or fabric of interwoven conductive fibers 1 06 (as described above), and has a first end formed in the grinding surface 1024 and provided in the groove 12 And the second end 52 200520893 1010 'to form a continuous conductive surface for contacting the substrate. The web or fabric can be one or more layers of interwoven fibers. The woven mesh or fabric including at least the conductive element 1004 is illustrated in a single layer in the 10D drawing. The conductive element 10 04 may be coupled to a conductive base 1014 and may extend above the abrasive surface 1024 'as shown in FIG. 10A. The conductive element 1004 can be coupled to a power source through a plurality of electrical connectors 1030 connected to the conductive base 1014.

第1 0E圖係顯示形成該導電元件1 004之另一實施例的 部分概要立體圖,該導電元件1〇〇4具有可將該導電元件固 定至該研磨物之本體1026。通道1050形成於該研磨物的本 體1024中與導電元件1004之溝槽1070相交會。一插入件 1055被設置在通道1〇50中。該插入件1〇55包含一導電材 料,如金或與導電元件1 〇 〇 6相同的材質。連接器1 〇 3 0然後 可被設置在通道1055中並與該插入件1055相接觸。該等連 接器1030可耦接至一電源。該導電元件1〇 〇4的端部1〇75可 與插入件1 0 5 5相接觸以供電流通過。導電元件1 〇〇4的端部 1075與連接器1〇3〇然後藉由介電質插入件1060而被固定於 導電的插入件1055上❶本發明亦涵蓋提供導電元件1004的 每一迴圈1006沿著該導電元件1004的長度上相隔一間距的 通道,或只在導電元件1004的兩端上的通道。 第11A-C圖係說明前述一系列導電材料之迴路或環之 彈性能力的概要側面圖。一研磨物11 〇〇至少包含一設於一 副墊1120(形成於一具有溝槽或凹槽11 40於其中之墊支撐 部1130上)上之研磨表面111〇。一至少包含介電材料迴路或 53 200520893 環1 1 5 0 (其並以導電材料塗覆)之導電元件丨丨4 2係置於該凹 槽1170中之一繫基座1155上並與一電接觸窗1145相聯繫。 基材1160係與該研磨物11 〇〇相接觸並與該研磨物11〇〇表面 進行相對移動。當該基材接觸該導電元件1142時,迴圈115〇 會壓縮進入該凹槽1140同時與基材116〇維持電性接觸(如 第11B圖所示當基材移動一足夠距離至不再接觸該導電 元件11 42時,該彈性迴圈1 1 5 0會回到未壓縮形狀以進行另 外製程,如第11C圖所示。 導電研磨墊之進一步範例係描述於2001年12月27日所 申請之美國專利臨時申請序號第1 0/03 3,73 2號,其全文係 合併於此以供參考。 電源應用Figure 10E is a schematic partial perspective view showing another embodiment of the conductive element 1004. The conductive element 1004 has a body 1026 that can fix the conductive element to the abrasive. A channel 1050 is formed in the body 1024 of the abrasive and intersects the groove 1070 of the conductive element 1004. An insert 1055 is provided in the channel 1050. The insert 1055 includes a conductive material such as gold or the same material as the conductive element 1006. The connector 1 0 3 0 can then be placed in the channel 1055 and in contact with the insert 1055. The connectors 1030 can be coupled to a power source. An end portion 1075 of the conductive element 1004 may be in contact with the insert 105 to allow a current to pass therethrough. The end 1075 of the conductive element 1 004 and the connector 1030 are then fixed to the conductive insert 1055 by a dielectric insert 1060. The present invention also covers each cycle of providing the conductive element 1004 1006 is a spaced-apart channel along the length of the conductive element 1004, or a channel only on both ends of the conductive element 1004. Figures 11A-C are schematic side views illustrating the elastic capabilities of the loop or ring of the aforementioned series of conductive materials. An abrasive object 1100 includes at least an abrasive surface 111 provided on a sub-pad 1120 (formed on a pad support portion 1130 having a groove or groove 1140 therein). A conductive element containing at least a dielectric material loop or 53 200520893 ring 1 1 50 (which is also coated with a conductive material) 丨 4 2 is placed in one of the grooves 1170 on a base 1155 and communicates with an electrical Contact window 1145 is associated. The substrate 1160 is in contact with the abrasive article 11000 and moves relative to the surface of the abrasive article 1100. When the substrate contacts the conductive element 1142, the loop 115o will compress into the groove 1140 while maintaining electrical contact with the substrate 116o (as shown in Figure 11B when the substrate moves a sufficient distance to no longer contact When the conductive element 11 42, the elastic loop 1 150 will return to the uncompressed shape for another process, as shown in Figure 11C. A further example of a conductive polishing pad is described on December 27, 2001. US Patent Provisional Application No. 10/03 3,73 2, the entire contents of which are incorporated herein by reference.

於前文敘述中,電源可藉使用一連接器的方式或電源 傳遞元件而耦接至該研磨物205。電源傳遞元件更詳細揭示 於2 001年12月27曰所申請之美國專利臨時申請序號第 1 0/033,732號,其全文係合併於此以供參考。 現在回到第1 1 A-11 C圖,電源可藉使用電接觸窗11 45 的方式耦接至導電元件11 40,該電接觸窗1145包括置於該 等溝槽或凹槽1170(形成於該研磨墊中)中之導電板或安裝 部。於第11 A圖所示之實施例中,該導電元件11 40係安裝 於一金屬板(例如金)上,該金屬板安裝於一支撐部上,例 如圓盤206。或者該電接觸窗也可設於一導電元件及一研磨 54 200520893 塾材料間之一研磨塾材料上,例如於該導電元件84〇及本體 8 10間(如第8A及8B圖所示)。該等電接觸窗接著藉導線(未 示出)搞接至一電源,如前文所述示於第圖。 第12A-1 2D圖係一研磨物之實施例的上方及側面概要 圖,該研磨物具有數個連接至一電源之擴充部(未示出)。 該電源可提供電流載送能力,亦即,該陽極偏壓制一基材 表面以於ECMP製程中進行陽極分解。該電源可藉一或多各 導電接觸窗連接至該研磨物,其中該等接觸窗係繞設於該 導電研磨部及/或該研磨物之該物支撐部。一或多個電源可 藉該一或多個接觸窗連接至該研磨物,以於該基材表面部 分形成不同偏壓或電流。或者,一或多條導線也可形成於 該導電研磨部及/或該物支撐部中,而該等導線係耦接至電 源。 第12A圖係一導電研磨墊之一實施例的上平面圖,其 中該研磨塾係藉一導電連接器耦接至一電源。該導電研磨 部可具有數個形成於該導電研磨部i 2 1 〇擴充部(例如一拱 座、獨立插頭),而該導電研磨部寬度均大於該物支撐部 1220。該等擴充部係藉一連接器1225耦接至一電源,以提 供電流至該研磨物2〇5。於第12b圖中,擴充部1215可形成 以由該導電研磨部1210之平面平行或橫向延伸,並延伸超 出該研磨支撐部1220之直徑。該穿孔及溝槽之圖案係示於 第6圖中。 第12B圖係一連接器1225之一實施例的截面概要圖, t 55 200520893 該連接器1 2 2 5係 至一電源(未示 1232之電聯接器 電性耦接至該擴 也可耦接至用以 定^物1 230。數個 磨部1 2 1 0及該固 1236可至少包含 1234、該等間距 例如金、舶、鈦 液發生反應,則 例如始。雖然此 施例也包括導電 第12C圖係· 台或圓盤206之 1 2 2 5之一實施例 固定物1240,例 充部1 2 1 5之導電 物1 242可設於該 該支撐部一 形成於該支撐部 物。或者,一電 定物而設於該固 經由一導電路徑1 232(例如一金屬線)耦接 出)。該連接器包括一連接至該導電路秤 12 34,且係藉一導電固定物123〇(如螺釘) 充部1215之該導電研磨部121〇。螺栓12“ 將該導電研磨部1210固定於其間之導電固 間距物1 2 3 6,例如墊圈,可設於該導電研 定物1 230及螺栓1 23 8之間。該等間距物 -一導電材料。該固定物123〇、電聯接器 物1236以及螺栓1 238可由導電材料製成, 、紹或銅。若材料(如銅)會與所用之電解 該材料可覆以一與電解液呈鈍態之材料, 處並未圖示,含該導電固定物之可替代實 钳、導電黏結帶或導電黏結劑。 一經由支撐部1260(例如第2圖所示之一平 上表面)耦接至一電源(未圖示)之連接器 的截面概要圖。該連接器1225至少包含一 如螺釘或螺栓,其具有夠長度以穿通該擴 研磨部1 2 1 〇以耦接該支撐部丨2 6 0。一間距 導電研磨部1210及該固定物1240之間。 般適用以承納該固定物1 2 4 0。孔徑1 2 4 6可 ^60之表面中以承納第12C圖所示之固定 聯接器可藉一與一支撐部1260相耦接之固 定物1240及該導電研磨部1210間。該支撐 56 200520893 部1 2 6 0可藉一導電路徑1 2 3 2 (例如一金屬線)連接至.一電 源,或連接至一設於一研磨平台或處理室外、或集成於一 . 研磨平台或處理室之電源,以提供與該導電研磨部1210之 · 電性連接。該導電路徑1232可與該支撐部1260整合或由該 支撐部1260延伸出(如第12B圖所示)。 於進一步實施例中,該固定物1240可為該支撐部 1260(延伸過該導電研磨部丨215,並藉一螺栓1248固定,如 第1 2D圖所示)之一集成擴充部。 φ 第12E及12F圖顯示提供電源予一研磨物1270之另一 實施例的側面概要及分解立體圖,該研磨物1 270具有一設 於一研磨部1280及一物支撐部1290間的電源聯接器1285。 該研磨部1280可由一前文所述之導電研磨材料製成,或包 括數個前述之導電元件1 275。該等導電元件1275可彼此間 為物理上絕緣,如第1 2F圖所示。該形成於該研磨表面中 之導電元件1 275係適於電性接觸該電聯接器1285,例如藉 由該元件之一導電基座。 φ 該電聯接器1285可至少包含一金屬内連線元件1275, 多條内連線元件1275之平行金屬線、多條獨立連接元件 1275之金屬線或一連接元件1275至一或多個電源之金屬線 織網内連線元件。耦接至獨立金屬線及元件之獨立電源可 · 具有不同之施加電源,同時該等内聯之金屬線及元件可提 . 供均勻電源給該等元件。該電源聯接器丨2 8 5可覆蓋該研磨 物之直徑或寬度之一部份或全部。第1 2F圖中之該電源聯 57 200520893 接器1 2 8 5係一連接元件1 2 7 5之金屬線織.網内連接元件的範 例。該電聯接器1 2 8 5可藉導電路徑1 2 8 7 (例如金屬線)連接 至一電源,或連接至一該設於一研磨平台或處理室外、或 集成於一研磨平台或處理室之電源,以提供與該導電研磨 部1 2 1 0之電性連接。 研磨表面中之研磨元件In the foregoing description, the power source may be coupled to the abrasive object 205 by using a connector or a power transmitting element. The power transfer element is disclosed in more detail in US Patent Provisional Application No. 10 / 033,732, filed on December 27, 2001, the entire contents of which are incorporated herein by reference. Returning now to Figure 1 1 A-11 C, the power supply can be coupled to the conductive element 11 40 by using an electrical contact window 11 45, which includes the groove or groove 1170 (formed in Conductive pad or mounting portion of the polishing pad). In the embodiment shown in FIG. 11A, the conductive element 1140 is mounted on a metal plate (such as gold), and the metal plate is mounted on a support portion, such as a disc 206. Alternatively, the electrical contact window can also be provided on a grounding material between a conductive element and a ground material, such as between the conductive element 840 and the body 8 10 (as shown in Figures 8A and 8B). The electrical contact windows are then connected to a power source by wires (not shown), as shown in the figure above. Figures 12A-1 2D are schematic top and side views of an embodiment of an abrasive article having several extensions (not shown) connected to a power source. The power supply can provide current carrying capability, that is, the anode is biased to form a substrate surface for anodic decomposition in an ECMP process. The power source may be connected to the abrasive object by one or more conductive contact windows, wherein the contact windows are wound around the conductive abrasive part and / or the object support part of the abrasive object. One or more power sources may be connected to the abrasive through the one or more contact windows to form different bias or currents on the surface portion of the substrate. Alternatively, one or more wires may be formed in the conductive abrasive portion and / or the object support portion, and the wires are coupled to the power source. Figure 12A is an upper plan view of an embodiment of a conductive polishing pad, wherein the polishing pad is coupled to a power source through a conductive connector. The conductive polishing portion may have a plurality of expansion portions (eg, an arch, a separate plug) formed on the conductive polishing portion i 2 10, and the width of the conductive polishing portion is larger than the object support portion 1220. The expansion units are coupled to a power source through a connector 1225 to provide current to the abrasive object 205. In FIG. 12b, the expansion portion 1215 may be formed to extend parallel or laterally from the plane of the conductive polishing portion 1210 and extend beyond the diameter of the polishing support portion 1220. The pattern of the perforations and grooves is shown in FIG. FIG. 12B is a schematic cross-sectional view of an embodiment of a connector 1225, t 55 200520893 The connector 1 2 2 5 is connected to a power source (not shown 1232, the electrical connector is electrically coupled to the expansion can also be coupled) It can be used to fix the object 1 230. Several grinding parts 1 2 1 0 and the solid 1236 can contain at least 1234, and the distance such as gold, titanium, and titanium liquid reacts, for example. Although this embodiment also includes conductivity FIG. 12C is an example of a fixed object 1240 of one of the tables or discs 206 1 2 2 5, and the conductive object 1 242 of the charging part 1 2 1 5 may be provided on the supporting part and formed on the supporting part. Alternatively, an electrical object is provided on the solid body and coupled through a conductive path 1 232 (eg, a metal wire). The connector includes a conductive grinding part 121o connected to the conductive circuit scale 1234 and a conductive fixing part 1230 (such as a screw) filling part 1215. Bolt 12 "A conductive solid spacer 1 2 3 6 fixing the conductive abrasive portion 1210 therebetween, such as a washer, may be provided between the conductive material 1 230 and the bolt 1 23 8. The spacers-a conductive Material. The fixture 1230, the electrical connector 1236 and the bolt 1 238 can be made of conductive materials, such as copper or copper. If the material (such as copper) will be electrolyzed with the material used, the material can be covered with a passive state with the electrolyte The material is not shown here, and the conductive fixture can be replaced by a solid clamp, a conductive adhesive tape, or a conductive adhesive. A support 1260 (such as a flat upper surface shown in FIG. 2) is coupled to a power source A schematic cross-sectional view of a connector (not shown). The connector 1225 includes at least one screw or bolt, which has a length sufficient to pass through the enlarged grinding portion 1 2 1 0 to couple the support portion 2 60. A space between the conductive grinding part 1210 and the fixing object 1240. It is generally applicable to receive the fixing object 1 2 4 0. The aperture 1 2 4 6 can accept the fixed coupling shown in FIG. 12C in the surface of 60 mm A fixed object 1240 coupled with a supporting part 1260 and the conductive research can be borrowed Room 1210. The support 56 200520893 Department 1 2 6 0 can be connected to a power source by a conductive path 1 2 3 2 (such as a metal wire), or connected to a ground platform or processing room, or integrated in 1. The power of the grinding platform or processing chamber to provide electrical connection with the conductive grinding portion 1210. The conductive path 1232 may be integrated with the support portion 1260 or extended from the support portion 1260 (as shown in FIG. 12B) ). In a further embodiment, the fixing object 1240 may be one of the supporting portion 1260 (which extends through the conductive grinding portion 215 and is fixed by a bolt 1248, as shown in FIG. 12D). Φ Figures 12E and 12F show a side outline and an exploded perspective view of another embodiment for supplying power to an abrasive object 1270. The abrasive object 1 270 has a power connector 1285 provided between a abrasive part 1280 and an object support part 1290 The grinding part 1280 may be made of a conductive abrasive material as described above, or may include several of the aforementioned conductive elements 1 275. The conductive elements 1275 may be physically insulated from each other, as shown in FIG. 12F. The Formed in the abrasive surface The conductive element 1 275 is suitable for electrically contacting the electrical connector 1285, for example, through a conductive base of the component. Φ The electrical connector 1285 may include at least one metal interconnecting element 1275, and a plurality of interconnecting lines. The parallel metal wire of element 1275, the metal wires of a plurality of independent connection elements 1275, or the metal wire of a connection element 1275 to one or more power woven mesh interconnecting elements. The independent power supply coupled to the independent metal wires and elements can be · With different applied power sources, these inline metal wires and components can provide uniform power to these components. The power connector 2 8 5 can cover part or all of the diameter or width of the abrasive. The 200512893 connector in Figure 1 2F is a metal wire braid of a connection element 1 2 5 5. It is an example of a connection element in a network. The electrical coupler 1 2 8 5 can be connected to a power source via a conductive path 1 2 8 7 (such as a metal wire), or to a ground or processing room, or integrated into a grinding platform or processing room. A power source for providing electrical connection with the conductive polishing portion 1210. Abrasive elements in abrasive surfaces

第13A-B圖係該導電物1400之另一實施例的上方及截 面圖。該導電物14〇〇包括多個延伸於該導電物14〇〇之一導 電部1404之一研磨表面1402上的研磨特徵。該研磨特徵可 為研磨粒子(參照第3圖),或可為第1 4A-B圖所示之不顯著 研磨元件1406。13A-B are top and cross-sectional views of another embodiment of the conductive object 1400. The conductive object 1400 includes a plurality of abrasive features extending from a polishing surface 1402 of a conductive portion 1404 of the conductive object 1400. The abrasive feature may be abrasive particles (refer to FIG. 3), or may be an insignificant abrasive element 1406 shown in FIGS.

於一實施例中,該研磨元件1406係數個接收於各個插 槽1408(形成於該導電物1400之研磨表面14 02中)中的棒狀 物。該研磨元件1406—般由該研磨表面1402延伸出,且係 配置以移除正進行研磨之基材之金屬表面的鈍態層,藉以 將下方金屬暴露至電解液及電化學活動,以於製程期間提 升研磨率。該研磨元件1406係由陶瓷、無機、有機或聚合 物材料等夠強材質形成,以破壞該金屬表面上所形成之鈍 態層。一範例係一由習知研磨墊(例如設於該導電物14〇〇 上之聚氨酯研磨墊)製成之棒或條狀物。於第13 A-B圖所示 之實施例中,該研磨元件1 4 0 6可具有至少約3 0度之簫式硬 度D,或足夠硬以磨損該研磨中材料之鈍態層。於一實施 58 200520893 例中,該研磨元件1406較銅為硬 富彈性,以 聚合物粒子可為固態或In one embodiment, the grinding element 1406 is a rod-shaped object received in each of the slots 1408 (formed in the grinding surface 142 of the conductive object 1400). The grinding element 1406 generally extends from the grinding surface 1402, and is configured to remove the passive layer of the metal surface of the substrate being polished, thereby exposing the underlying metal to the electrolyte and electrochemical activities to facilitate the manufacturing process. The grinding rate is increased during this period. The grinding element 1406 is formed of a sufficiently strong material such as ceramic, inorganic, organic, or polymer materials to destroy the passive layer formed on the metal surface. An example is a rod or bar made of a conventional abrasive pad, such as a polyurethane abrasive pad provided on the conductive object 1400. In the embodiment shown in Figures 13A-B, the grinding element 14 0 6 may have a flute hardness D of at least about 30 degrees, or sufficiently hard to wear away a passivated layer of material in the grinding. In an implementation of 58 200520893, the grinding element 1406 is harder and more elastic than copper, and the polymer particles can be solid or

部 1404) 〇 該研磨元件1 4 0 6可經配置以呈不 同幾何狀、或於該研1404) 〇 The grinding element 1 406 can be configured to have different geometries, or

網柵、平行及中心或其他方向等亦可為之。 於一實施例中,一彈性元件1 4 1 〇也可設於各個位於該 研磨元件1406及該導電部分1404間之插槽14〇8中。該彈性 兀件1410可讓該研磨元件1406相對於該導電部14〇4作移 動’藉以對該基材提供更高的柔順性以於研磨期間均勻移 除鈍態層。此外,該彈性元件丨41 〇之柔順性可作選擇,以 藉研磨元件1406及該導電部1404之研磨表面14〇2調整施於 該基材之相關壓力,藉以平衡該鈍態層之移除速率對鈍態 層形成速率,使研磨金屬可最小暴露於該研磨元件14〇6而 最小化可能產生的刮痕。 由研磨表面延伸之導電球體 第14A-B圖係一導電物1 500之一替代實施例的上方及 截面圖。該導電物1500包括數個導電滾動物1506,其係由 該導電物1500之一上方部1504之研磨表面1502延伸出。研 磨期間,該等滾動物1 5 0 6可藉基材被迫向下至該研磨表面 15 02之相同平面。該内嵌於該導電物15 〇〇中之導電滾動物 200520893 以 , 間 定 期 固 程 行 製 進 於04 以15 , 部 示 上ϊ Μ 源 對 電 相 部 可 外。06 一材15 至基物 耦研滾 壓率電 電速導 高除該 以移 可高 或可自由滾動。該導電滾動物1 506可為球體、圓柱、銷、 橢球或其他於製程期間不會刮傷基材之形狀。 於第14B圖所示之實施例中,該導電滾動物15〇6係多 個設於一或多個導電載件1 520中之球體。各導電載件1520 係設於一插槽1508中,而該插槽係形成於該導電物1500之 研磨表面15 02中。該導電滾動物15 06—般係由研磨表面延 伸出’且係經配置以提供與該基材之金屬表面的電性接 觸。該導電滚動物1506可由任一導電材料形成、或由一至 少部分塗覆以導電覆蓋層1 525之核心1 522所形成。於第 14B圖所示之實施例中,該導電滚動物15〇6具有一聚合物 核心1 5 2 2,其至少部份以一軟性導電材料1 5 24塗覆之。一 範例為塗覆以導電金層(以銅作為TORLONtm及金層間之 晶種層)之TORLONtm聚合物核心。 於一實施例中,該聚合物核心1 522可由一彈性材料選 出,例如聚氨酯,其在研磨期間當滾動物1 506接觸基材時 會發生變形。當該滾動物1506變形時,該滾動物1506及基 材間的接觸區域會增加,因此可提升該滾動物1506及導電 層間之電流流動,藉以改善研磨結果。 該導電滾動物1506可配置呈不同形狀、或於該研磨表 面上作隨機配置。於一實施例中,該導電滾動物1 5 0 6可於 200520893 該研磨表面1 5 02上徑向配置,然而,其他方向例如螺旋、 網栅、平行及中心或其他方向等亦可為之。Grid, parallel and center or other directions can also be used. In one embodiment, an elastic element 1410 may also be disposed in each of the slots 1408 located between the grinding element 1406 and the conductive portion 1404. The elastic element 1410 allows the abrasive element 1406 to move relative to the conductive portion 1404 'to provide higher flexibility to the substrate to uniformly remove the passive layer during grinding. In addition, the flexibility of the elastic element 丨 41 can be selected to adjust the relative pressure applied to the substrate by the abrasive element 1406 and the abrasive surface 1402 of the conductive portion 1404 to balance the removal of the passive layer The rate of formation of the passive layer allows the abrasive metal to be minimally exposed to the abrasive element 1406 and minimizes possible scratches. Conductive spheres extending from a ground surface. Figures 14A-B are top and cross-sectional views of an alternative embodiment of a conductive object 1500. The conductive object 1500 includes a plurality of conductive rolling objects 1506 that extend from the abrasive surface 1502 of an upper portion 1504 of one of the conductive objects 1500. During grinding, the rolling objects 1506 can be forced downward by the substrate to the same plane of the grinding surface 1502. The conductive rolling object embedded in the conductive object 1500 is 200520893, and the solid-state rolling process is periodically performed at 04-15, and the above-mentioned source is external to the electrical phase part. 06 1 material 15 to the base Coupling Rolling rate Electricity Electricity Conductivity High Divide this to move High or free to roll. The conductive rolling object 1 506 may be a sphere, a cylinder, a pin, an ellipsoid, or other shapes that will not scratch the substrate during the manufacturing process. In the embodiment shown in FIG. 14B, the conductive rolling element 1506 is a plurality of spheres provided in one or more conductive carriers 1 520. Each conductive carrier 1520 is disposed in a slot 1508, and the slot is formed in the abrasive surface 1502 of the conductive object 1500. The conductive rolling element 15 06 is generally extended from the abrasive surface 'and is configured to provide electrical contact with the metal surface of the substrate. The conductive roller 1506 may be formed of any conductive material, or formed of a core 1 522 at least partially coated with a conductive cover layer 1 525. In the embodiment shown in FIG. 14B, the conductive rolling element 1506 has a polymer core 1522, which is at least partially coated with a soft conductive material 1524. One example is a TORLONtm polymer core coated with a conductive gold layer with copper as the seed layer between TORLONtm and the gold layer. In one embodiment, the polymer core 1 522 may be selected from an elastic material, such as polyurethane, which deforms when the rolling material 1 506 contacts the substrate during grinding. When the rolling object 1506 is deformed, the contact area between the rolling object 1506 and the substrate is increased, so the current flow between the rolling object 1506 and the conductive layer can be improved, thereby improving the grinding result. The conductive rolling objects 1506 can be arranged in different shapes or randomly arranged on the polished surface. In one embodiment, the conductive rolling element 1506 can be arranged radially on the grinding surface 1502 of 200520893. However, other directions such as spiral, grid, parallel and center or other directions can also be used.

於第1 4B圖所示之實施例中,一彈性組件1 5 1 0可設於 該導電载件1520及該導電部1504間之各個插槽1508中。該 彈性組件151〇可讓該等導電滾動物1 506(及載件152〇)相對 於導電部1 5 04進行移動,藉以提供予基材更佳的柔順性, 以於研磨期間進行更均勻電性接觸。一接觸窗(未示出)也 可形成於前述該導電物1 500中(參照第7F圖)以利製程控 制。 具有插入塾之導電物 第15圖係一導電物1600之另一實施例的截面圖。該導 電物1600 —般包括一研磨期間適於接觸一基材之導電部 1602、一物支撐部1604以及一夾於該導電部1602及該物支 撐部1604間的插入墊1606。該導電部1602及物支擇部16〇4 可經配置相似於前述任一實施例或其均等物。黏結層丨6 〇 8 可设於該插入墊1606之各側以將該插入塾1606轉接至該物 支撐部1604及該導電部1602。該導電部1 602、該物支#部 1 604以及該插入墊1606可藉數種替換方式耦接,藉以讓該 導電物1 600之組件在使用壽命到期後可更容易替換為—單 一單元,簡化該導電物1600之置換、存貨及順序管理。 亦可選擇的是,該支撐部1604可耦接至一電極2 〇4並以 該導電物1 600進行替換以成為一單一單开。兮推& 平70 該導電物 61 200520893 1600(可選擇地包括該電極204)也可包括一形成其間之接 觸窗,如前述第7F圖所示。In the embodiment shown in FIG. 14B, an elastic component 1510 can be disposed in each slot 1508 between the conductive carrier 1520 and the conductive portion 1504. The elastic component 1510 can move the conductive rollers 1 506 (and the carrier 1520) relative to the conductive portion 1504, thereby providing better flexibility to the substrate and performing more uniform electricity during grinding. Sexual contact. A contact window (not shown) may also be formed in the conductive object 1 500 (refer to FIG. 7F) to facilitate process control. Fig. 15 is a cross-sectional view of another embodiment of a conductive object 1600. The conductive object 1600 generally includes a conductive portion 1602 suitable for contacting a substrate during grinding, an object supporting portion 1604, and an insertion pad 1606 sandwiched between the conductive portion 1602 and the object supporting portion 1604. The conductive portion 1602 and the material selection portion 1604 can be configured similarly to any of the foregoing embodiments or their equivalents. An adhesive layer 608 may be provided on each side of the insertion pad 1606 to transfer the insertion pad 1606 to the object support portion 1604 and the conductive portion 1602. The conductive part 1 602, the material support # 部 1 604, and the insertion pad 1606 can be coupled by several replacement methods, so that the components of the conductive object 1 600 can be more easily replaced with a single unit after the end of its service life. , Simplify the replacement, inventory and order management of the conductive object 1600. Alternatively, the supporting portion 1604 may be coupled to an electrode 204 and replaced with the conductive object 1600 to form a single single-open. Push & flat 70 The conductive object 61 200520893 1600 (optionally including the electrode 204) may also include a contact window formed therebetween, as shown in the aforementioned FIG. 7F.

該插入塾1 606—般係較研磨物支撐部16〇4為硬,且係 一堅硬或較該導電部1602為硬者。本發明亦涵蓋插入墊 1 606可較該導電部1602為軟者。該插入墊16〇6之硬度係經 -選擇以對該導電物1 6 0 0提供剛性,如此可延長該導電部 1602及該物支撐部1604之機械壽命,同時改善該導電物 1 6 0 0的潮濕性’致使研磨表面有更高的平整性。於一實施 例中,該插入墊1606具一小於或等於簫式硬度d值約8〇之 硬度’該物支撐部1604具有一小於或等於箫式硬度a值約 80之硬度,同時該導電部16〇2具有小於或等於簫式硬度〇 值約100之硬度。於另一實施例中,該插入墊1606具有一小 於或等於35密爾之厚度,同時該物支撐部16〇4具有小於或 等於約100密爾之厚度。The insert 塾 1 606 is generally harder than the abrasive support portion 1604, and is harder or harder than the conductive portion 1602. The present invention also covers that the insertion pad 1 606 may be softer than the conductive portion 1602. The hardness of the insertion pad 1606 is selected to provide rigidity to the conductive object 1660, so that the mechanical life of the conductive portion 1602 and the support portion 1604 can be extended, and the conductive object 1600 is improved. The 'wetness' results in a higher levelness of the ground surface. In one embodiment, the insertion pad 1606 has a hardness of less than or equal to the Xiao hardness d value of about 80. The object supporting portion 1604 has a hardness of less than or equal to the Xiao hardness a value of about 80, and the conductive portion 1602 has a hardness of less than or equal to a flute hardness of about 100. In another embodiment, the insertion pad 1606 has a thickness of less than or equal to 35 mils, and the object support portion 160 has a thickness of less than or equal to about 100 mils.

該插入墊1606可由一介電材料製造以讓電氣路徑可通 過該層板間而建立’而該層板至少包括該導電物1600(亦即 該導電部16 02、該插入墊1606以及該物支撐部16〇4之堆 疊)。該電氣路徑可讓該導電物1600浸入或由一導電流體 (例如電解液)覆蓋之方式建立之。為有利於建立通過該導 電物1600之電氣路徑,該插入墊1606可至少為一可滲透或 可穿透性質以讓電解液流經其間。 於一實施例中,該插入墊1 6 〇 6係由一介電材料(與電解 液及電化學製程相容)所製。而所謂相容的材料包括聚合 62 200520893 物,例如聚氨酯、聚酯、聚酯薄膜、環氧乙烯以及.聚碳酸 酯纖維及類似者。 亦可選擇的是’可於該插入墊16〇6及該導電部1602間 設一導電背襯1 6 1 0。該導電背襯丨6丨〇 一般等於遍及該導電 部1602之電位,藉以提升研磨岣勻度。於該導電部16〇2之 研磨表面具有相同電位可確保該導電部16〇2及該被研磨導 電材料間良好的電接觸性,特別是在該導電材料是剩餘材 料而不再是一連續層時(亦即,殘餘薄膜的分離島塊)。此 外,該導電背襯1610可提供該導電部1602機械強度,藉以 增加該導電物1600之使用壽命。該導電背襯161〇的使用對 該等實施例而言(如通過該導電部之電阻約大於 500m-ohms及增強導電部1602之機械整合者)有諸多助 益。該導電背襯1610也可用以提昇導電均勻度並降低該導 電部1 602之電阻。該導電背襯1610可由金屬箔、金屬筛、 金屬塗覆之織網或不織布織品及其他合適且可與研磨製程 相容之導電金屬。於一實施例中,該導電背襯i 6 i 〇係壓模 至導電部1602。該背襯1610係經配置以不影響該導電部 1604及該插入墊1 606間之電解液的流動。該導電部16〇2可 透過壓模、層壓、注入模造及其他適當方式安裝於該導電 背襯1 6 1 0上。 第16圖係一導電物1700之另一實施例的截面圖。該導 電物1 7 0 0 —般包括一導電部1 6 0 2 ’其於研磨期間係適於接 觸一基材,一導電背襯1610; —物支撐部16〇4以及一插入 63 200520893 墊1 706,以三明治方式夾於該導電部1602及該物支撐部 1604之間,具有與前述該導電物1600相似之結構。The insertion pad 1606 can be made of a dielectric material so that an electrical path can be established through the layers. The layer includes at least the conductive object 1600 (that is, the conductive part 1602, the insertion pad 1606, and the object support Stack of parts 1604). The electrical path can be established by immersing the conductive object 1600 or covering it with a conductive fluid (such as an electrolyte). To facilitate the establishment of an electrical path through the conductor 1600, the insertion pad 1606 may be at least of a permeable or permeable nature to allow electrolyte to flow therethrough. In one embodiment, the insertion pad 16 06 is made of a dielectric material (compatible with electrolytic liquid and electrochemical processes). The so-called compatible materials include polymers, such as polyurethane, polyester, polyester film, ethylene oxide, and polycarbonate fibers and the like. Alternatively, a conductive backing 1616 may be provided between the insertion pad 1606 and the conductive portion 1602. The conductive backing 丨 6 丨 〇 is generally equal to the potential across the conductive portion 1602, thereby improving the grinding uniformity. The same potential on the ground surface of the conductive portion 1602 can ensure good electrical contact between the conductive portion 1602 and the ground conductive material, especially when the conductive material is a residual material and is no longer a continuous layer Time (ie, islands of residual film). In addition, the conductive backing 1610 can provide mechanical strength of the conductive portion 1602, thereby increasing the service life of the conductive object 1600. The use of the conductive backing 1610 is of great benefit to these embodiments (such as the mechanical integrator through which the resistance of the conductive portion is greater than about 500 m-ohms and the conductive portion 1602 is enhanced). The conductive backing 1610 can also be used to improve the uniformity of the conductivity and reduce the resistance of the conductive portion 1 602. The conductive backing 1610 can be made of metal foil, metal sieve, metal-coated woven or non-woven fabric, and other suitable conductive metals that are compatible with the grinding process. In one embodiment, the conductive backing i 6 i 0 is stamped to the conductive portion 1602. The backing 1610 is configured so as not to affect the flow of the electrolyte between the conductive portion 1604 and the insertion pad 1 606. The conductive portion 1602 can be mounted on the conductive backing 1610 through stamping, lamination, injection molding, and other appropriate methods. FIG. 16 is a cross-sectional view of another embodiment of a conductive object 1700. The conductive object 1700 generally includes a conductive portion 1620 'which is suitable for contacting a substrate during grinding, a conductive backing 1610, an object supporting portion 1604 and an insert 63 200520893 pad 1 706, sandwiched between the conductive portion 1602 and the object supporting portion 1604 in a sandwich manner, and has a structure similar to the foregoing conductive object 1600.

於第16圖所示之該實施例中,該插入塾1706係由一具 有數個巢室1 708之材料所製。該等巢室1 708 —般係填以空 氣或其他流體,並可提供彈性及柔順性以提升製程。該等 巢室可為開啟或關閉在一尺寸範圍介於〇 · 1微米至數毫米 間,例如介於1微米至1毫米。本發明亦涵蓋適用於插入墊 1706的其他尺寸。該插入墊1706可為至少可滲透性或可穿 透性,以讓電解液可流經其間。 該插入墊17 06可由一與電解液及電化學製程相容之介 電材料製成。合適之材料包括,但不限於發泡的聚合物(如 發泡聚氨酯及聚酯薄膜)。該插入墊1706—般具有較物支撐 部或副塾1 6 0 4為小之壓縮性,且在受到壓力時更具局部獨 立變形的特性。In the embodiment shown in Fig. 16, the insertion pin 1706 is made of a material having a plurality of cells 1708. These chambers 1 708 are generally filled with air or other fluids and provide elasticity and compliance to enhance the process. These cells can be opened or closed in a size range between 0.1 micrometers and several millimeters, such as between 1 micrometer and 1 millimeter. The invention also covers other dimensions suitable for use with the insert pad 1706. The insertion pad 1706 may be at least permeable or permeable to allow electrolyte to flow therethrough. The insertion pad 17 06 may be made of a dielectric material compatible with the electrolyte and electrochemical processes. Suitable materials include, but are not limited to, foamed polymers (such as foamed polyurethane and polyester films). The insertion pad 1706 generally has a smaller compressibility than the object supporting portion or the auxiliary pad 1640, and has the characteristics of local independent deformation when under pressure.

第17圖係一導電物18〇〇之另一實施例的截面圖。該導 電物1800包括一耦接至一物支撐部18〇4之導電部18〇2。亦 可選擇的是’該導電物1800可包括設於該導電部18〇2及該 物支撐部1 804間之一插入墊及導電背襯(兩者均未圈示 出)。 該導電物1 800 —般包括數個穿通之孔徑18〇6 ,藉以讓 電解液或其他製程流體可通過該導電部18〇2之上研磨表面 1 808及該物支撐部1 804之下安裝表面之間。該等孔徑18〇6 之每一者與該上研磨表面1808相交所界定之邊緣1812係呈 64 200520893 現 '一輪廊以消除任何可能咬 落、毛邊或表面不規則部。 部、凹槽、錐形物或其他可 小化之結構。 在製程期間.刮傷基材的鋒利角 該邊緣1 8 1 2之輪廓可能包括輻 滑順該邊緣1 8 1 2並促使到痕最 於導電部1 8 0 2係至少部八山 夕刀由一聚合物形成之該等實施 例中’滑順該邊緣i 8 i 2可藉 y 稽由在該聚合物完全固化之前先FIG. 17 is a cross-sectional view of another embodiment of a conductive object 1800. The conductive object 1800 includes a conductive portion 1802 coupled to an object support portion 1804. Alternatively, 'the conductive object 1800 may include an insertion pad and a conductive backing (neither of which is shown in circle) provided between the conductive portion 1802 and the object supporting portion 1804. The conductive object 1 800 generally includes several penetrating apertures 1860, so that the electrolyte or other process fluid can pass through the conductive portion 1802 to grind the surface 1 808 above the conductive portion and the mounting surface below the support portion 1 804. between. Each of these apertures 1806 intersects with the upper abrasive surface 1808. The edge 1812 is defined as 64 200520893. 'A rounded corridor to eliminate any possible biting, burrs or surface irregularities. Parts, grooves, cones, or other structures that can be reduced. During the process, the sharp angle of the scratched substrate may include the edge of the edge 1 8 1 2 and smooth the edge 1 8 1 2 and promote the mark to the conductive part 1 8 0 2 In the examples formed by a polymer, 'slip the edges i 8 i 2 can be used by y before the polymer is fully cured

形成孔徑1 8 0 6的方式實頊。田丄 M ^ 耳見因此,該等邊緣1 8 12在剩餘之The way in which the pore diameter is 1 800 is formed. Tian Yi M ^ Hearing, therefore, these edges 1 8 12 in the remaining

聚合物環狀固化期問每马:道φ ^ , 田μ導電口p 1 8 〇2收縮時將變的較圓。 此外或者另一替代方式為,該等邊緣1812可藉由在 :化期間或其後施予熱或壓力之至少一者以使之變圓。於 7範例中,該等邊緣1812可以磨光、加熱或火焰處理的方 來圓潤於該研磨表面1 8 〇 8及該孔徑丨8 〇 6之間在邊緣丨8 i 2 處的轉變。Polymer ring curing period per horse: Road φ ^, Tian μ conductive port p 1 8 0 will become rounder when shrinking. Additionally or alternatively, the edges 1812 may be rounded by applying at least one of heat or pressure during or after the heat treatment. In the example 7, the edges 1812 can be polished, heated, or flame-treated to round off the transition between the abrasive surface 1 8 08 and the aperture 8 0 6 at the edge 8 8.

於另一範例中,一聚合物導電部丨g 〇2可由一與鑄模或 鋼模相斥之可塑材料所製。聚合物導電部丨8 〇2之相斥性質 可形成一表面張力,致使施予該聚合物導電部丨8 〇2之被壓 模應力可將材料由鱗模移離,藉以使該等孔徑1 8 0 6之邊緣 1 8 1 2在固化時得以變圓。 該等孔徑1806可於組裝前或後穿過該導電物1800而形 成。於一實施例中,該孔徑1 806包括一形成於該導電部18〇2 中之第一孔洞1814以及一形成於該物支撐部1804中之第二 孔洞1 8 1 6。於包括一插入墊之該等實施例中,該第二孔洞 1 8 1 6係形成其中。或者,該第一孔洞1 8 1 4及該第二孔洞1 8 1 6 65 200520893 之至少一 具有一大 之該第二 之該導電 力矩的抵 洞同中心 1 802有較 墊損傷所 該導 層組合一 實施例中 於插入層 進行機械 穿孔後一 行穿孔。 因此 均於上文 以促進均 配置以最 降低製程 雖然 及進一步 專利範圍 部份可形成於該導電部1 8 02中。該第一孔洞1 8 1 4 於該第二孔洞1 8 1 6之直徑。在該第一孔洞1 8 1 4下 孔洞1 8 1 6的較小直徑可提供環繞該第一孔洞丨8 i 4 部1 802橫向支撐,藉以改善研磨期間對墊切變及 抗力。因此,於該表面1 808(其係設與下方較小孔 )處該包括一較大孔洞之孔徑1806會使該導電部 小的變形,同時最小化粒子形成,因此也最小化 引起的基材缺陷。 電物中之該等孔徑可經由機械方法(例如於所有 起之前或之後進行公/母打孔)打孔形成之。於一 ’該導電部18 02於導電背襯上之壓模係首先安裝 上,具有導電背襯之導電部1802及插入層則一起 穿孔’該物支樓部或副塾係分別機械穿孔,並在 起校準。於另一實施例中,所有層則放在一起進 本發明亦涵蓋其他任何穿孔技術及序列。 ,適用於基材電化學研磨之導電物的各種實施例 提出。該導電物可對基材表面提供良好柔順性, 勻電接觸來提升研磨表面。此外,該導電物係經 小化製程期間的刮痕,有效的降低缺陷產生並可 成本。 前述係描述本發明之各種實施例,然本發明其他 的實施例亦可於不悖離本發明之範圍及下文申請 所界定之範圍下提出。In another example, a polymer conductive part 〇2 can be made of a plastic material that repels a casting mold or a steel mold. The repulsive nature of the conductive part of the polymer 丨 8 〇 2 can form a surface tension, so that the stamped stress applied to the conductive part of the polymer 8 0 2 can remove the material from the scale mold, thereby making the apertures 1 The edge of 8 0 6 1 8 1 2 is rounded when cured. The apertures 1806 may be formed through the conductive object 1800 before or after assembly. In one embodiment, the aperture 1 806 includes a first hole 1814 formed in the conductive portion 1802 and a second hole 1 8 1 6 formed in the object support portion 1804. In the embodiments including an insertion pad, the second hole 18 1 6 is formed therein. Alternatively, at least one of the first hole 1 8 1 4 and the second hole 1 8 1 65 65200520893 has a large one of the second hole having the conductive moment and the center 1 802 has a relatively large pad damage to the conductive layer. In one embodiment, one row of perforations is performed after mechanical perforation of the insertion layer. Therefore, all of the above are used to promote the configuration to minimize the manufacturing process. Although and further, the patent scope can be formed in the conductive portion 1802. The diameter of the first hole 1 8 1 4 is the diameter of the second hole 1 8 1 6. Below the first hole 1 8 1 4 the smaller diameter of the hole 1 8 1 6 can provide lateral support around the first hole 丨 8 i 4 section 1 802 to improve the pad shear and resistance during grinding. Therefore, the pore diameter 1806 including a larger hole at the surface 1 808 (which is connected with the smaller hole below) will cause small deformation of the conductive portion, and at the same time minimize particle formation, and therefore minimize the substrate caused. defect. These apertures in electrical appliances can be formed by mechanical means (such as male / female perforation before or after). At one, the stamper system of the conductive part 1802 on the conductive backing is first installed, and the conductive part 1802 with the conductive backing and the insertion layer are perforated together. Starting calibration. In another embodiment, all layers are put together. The present invention also covers any other perforation techniques and sequences. Various embodiments of conductive materials suitable for electrochemical polishing of substrates are proposed. The conductive material can provide good compliance to the surface of the substrate, and evenly contact the surface to improve the abrasive surface. In addition, the conductive material is reduced in the scratches during the manufacturing process, which effectively reduces the occurrence of defects and can reduce costs. The foregoing is a description of various embodiments of the present invention, but other embodiments of the present invention can also be made without departing from the scope of the present invention and the scope defined by the following applications.

66 200520893 【圖式簡單說明】 因此本發明前述所描述之該等態樣可藉由圖示而更 易領會,簡述於上之内容其更明確的描述可藉由參照其實 施例以及附加圖示的方式而獲致更詳細之說明。66 200520893 [Brief description of the drawings] Therefore, the aspects described in the present invention can be more easily understood through the illustrations. For a brief description of the content described above, a clearer description can be obtained by referring to its embodiments and additional illustrations Way to get more detailed explanation.

然而,應注意的是,附圖中所示者為本發明之典型的 實施例,因此不應被認為是本發明範圍的限制,因為本發 明可以有其它等效的實施例。 第1圖為本發明之處理設備的一實施例的平面圖; 第2圖為為一 ECMP站的實施例剖面圖; 第3圖為該研磨物的實施例的部分剖面圖; 第4圖為該具溝槽之研磨物的實施例的上平面圖; 第 5圖為該具溝槽之研磨物的另一實施例的上平面 圖; 第 6圖為該具溝槽之研磨物的又一實施例的上平面 圖;It should be noted, however, that the figures shown are typical embodiments of the invention and therefore should not be considered as limiting the scope of the invention, as the invention may have other equivalent embodiments. Figure 1 is a plan view of an embodiment of the processing equipment of the present invention; Figure 2 is a sectional view of an embodiment of an ECMP station; Figure 3 is a partial sectional view of an embodiment of the abrasive article; An upper plan view of an embodiment of a grooved abrasive article; FIG. 5 is an upper plan view of another embodiment of the grooved abrasive article; and FIG. 6 is an illustration of another embodiment of the grooved abrasive article. Upper plan

第 7A圖為此處所述之一導電織物或織品之上平面 圖; 第7B及7C圖為具有一研磨表面之研磨物的部分剖 面圖,其中該研磨表面至少包括一導電織物或織品; 第7D圖為一包括一金屬箔之一研磨物之一實施例的 部分剖面圖; 第7E圖為一至少包括一織品材料之研磨物之另一實 施例; 67 200520893 第7F圖為一具有一窗口形成其中之研磨物之另一實 施例; 第8A及8B圖係分別為一具有一導電元件之研磨物 的一實施例之上及剖面概要圖; 第8C及8D圖係分別為一具有一導電元件之研磨物 之一實施例的上及剖面概要圖; 第9A及9B圖係一具有一導電元件之研磨物之其他 實施例的立體圖; 第1 0 A圖為一研磨物之另一實施例之部分立體圖; 第1 0B圖為一研磨物之另一實施例之部分立體圖; 第1 0C圖為一研磨物之另一實施例之部分立體圖; 第1 0D圖為一研磨物之另一實施例之部分立體圖; 第1 0E圖為一研磨物之另一實施例之部分立體圖; 第11 A-11C圖為一基材接觸一此處所述之研磨物之 實施例之一實施例的概要側面圖; 第1 2A-1 2D圖為一研磨物之實施例之上方及側面概 要圖,其中該研磨物具有數個連接至一電源的延伸部; 第13 A-B圖為一導電物之另一實施例的上方及剖面 圖; 第1 4A-B圖為一導電物之另一實施例的上方及剖面 圖; 第1 5 -1 7圖為一導電物之替代實施例的剖面圖; 第18圖為一電極之一實施例的平面圖。 為了便於瞭解,相同的標號被使用在各圖式中用來標 68 200520893 示相 同 的 元 件· 〇 【主 要 元 件 符 號說明】 100 處 理 設 備 102 電 化 學 機 械研磨站 104 度 量 裝 置 106 研 磨 站 108 基 座 110 輸 送 站 112 轉 塔 114 基 材 116 裝 載 機 械 臂 118 基 材 儲 存 匣 120 工 廠 介 面 122 清 潔 模 組 124 輸 送 緩 衝 站 126 輸 出 緩 衝 站 128 裝 載 杯 組 件 130 研 磨 頭 132 fm 送 機 械 臂 134 孔 138 臂 140 控 制 器 142 CPU 144 記 憶 體 146 支 援 電 路 150 電 源 供 應 器 202 承 盤 204 電 極 205 研 磨 物 206 圓 盤 210 底 部 212 軸 214 排 水 道 216 孔 218 密 封 件 220 電 解 液 222 通 道 224 馬 達 232 容 積 233 容 器 234 孔 240 過 濾 器 242 幫 浦 244 供 應 管 69 200520893 252 中央部分 254 裙部 258 凹陷 270 喷嘴 272 流體輸送系統 3 10 研磨表面 320 底墊部分 350 穿孔 360 研磨粒子 370 上方研磨表面 440 圓形墊 442 溝槽 446 穿孔 448 研磨表面 540 研磨墊 542 溝槽 544 研磨墊 546 穿孔 548 研磨物 550 内徑 640 研磨物 642 溝槽 644 研磨墊 645 溝槽 646 穿孔 648 研磨物 650 外徑 700 織品 710 交織織品 720 垂直方向 730 水平方向 740 通道 750 穿孔 780 金屬箔 790 導電結合劑 792 下方層 794 上方層 796 研磨表面 798 織物 800 研磨物 810 本體 815 副墊 820 研磨表面 830 凹坑 840 導電元件 845 導電組件 850 接觸表面 860 穿孔Figure 7A is a plan view of a conductive fabric or fabric described herein; Figures 7B and 7C are partial cross-sectional views of an abrasive article having an abrasive surface, wherein the abrasive surface includes at least one conductive fabric or fabric; 7D The figure is a partial cross-sectional view of an embodiment including an abrasive article of a metal foil; FIG. 7E is another embodiment of an abrasive article including at least a fabric material; 67 200520893 FIG. 7F is a diagram with a window formed Another embodiment of the abrasive article therein; FIGS. 8A and 8B are schematic diagrams of an embodiment and a sectional view of an abrasive article having a conductive element, respectively; and FIGS. 8C and 8D are diagrams each having a conductive element A schematic diagram of the upper and cross sections of one embodiment of an abrasive article; Figures 9A and 9B are perspective views of other embodiments of an abrasive article having a conductive element; and Figure 10A is another embodiment of an abrasive article Partial perspective view; Figure 10B is a partial perspective view of another embodiment of an abrasive article; Figure 10C is a partial perspective view of another embodiment of an abrasive article; Figure 10D is another embodiment of an abrasive article Part of Figure 10E is a partial perspective view of another embodiment of an abrasive article; Figures 11A-11C are schematic side views of one embodiment of a substrate in contact with an abrasive article described herein Figures 1 2A-1 2D are schematic top and side views of an embodiment of an abrasive article, where the abrasive article has several extensions connected to a power source; Figure 13 AB is another embodiment of a conductive article Figs. 14A-B are top and cross-sectional views of another embodiment of a conductive object; Figs. 15-17 are cross-sectional views of an alternative embodiment of a conductive object; Fig. 18 is A plan view of one embodiment of an electrode. In order to facilitate understanding, the same reference numerals are used in each drawing to indicate 68 200520893 showing the same components. 〇 [Description of the main component symbols] 100 Processing equipment 102 Electrochemical mechanical polishing station 104 Measuring device 106 Grinding station 108 Base 110 Conveying station 112 Turret 114 Substrate 116 Loading robot arm 118 Substrate storage box 120 Factory interface 122 Cleaning module 124 Delivery buffer station 126 Output buffer station 128 Loading cup assembly 130 Grinding head 132 fm Sending robot arm 134 Hole 138 Arm 140 Control 142 CPU 144 Memory 146 Supporting circuit 150 Power supply 202 Mounting plate 204 Electrode 205 Abrasive object 206 Disk 210 Bottom 212 Shaft 214 Drain channel 216 Hole 218 Seal 220 Electrolyte 222 Channel 224 Motor 232 Volume 233 Container 234 Hole 240 Filter 242 Pump 244 Supply pipe 69 200520893 252 Central section 254 Skirt 258 Depression 270 Nozzle 2 72 Fluid delivery system 3 10 Grinding surface 320 Bottom pad portion 350 Perforation 360 Abrasive particles 370 Above grinding surface 440 Round pad 442 Groove 446 Perforation 448 Grinding surface 540 Grinding pad 542 Groove 544 Grinding pad 546 Perforation 548 Abrasive object 550 Inner diameter 640 Abrasive material 642 Groove 644 Grinding pad 645 Groove 646 Perforation 648 Abrasive material 650 Outer diameter 700 Fabric 710 Interwoven fabric 720 Vertical 730 Horizontal 740 Channel 750 Perforation 780 Metal foil 790 Conductive bonding agent 792 Lower layer 794 Upper layer 796 Polishing Surface 798 Fabric 800 Abrasive 810 Body 815 Vice pad 820 Grinding surface 830 Dimple 840 Conductive element 845 Conductive component 850 Contact surface 860 Perforation

70 200520893 870交叉圖案 900研磨材料 904導電元件 908凹坑 9 1 0安裝部 9 1 3導電副元件 940導電表面 1 004導電元件 1006迴圈 1 008第一端 1010第二端 1 0 1 4繫線基座 1 024研磨表面 1 030連接器 1055通道 I 070溝槽 1100研磨物 II 2 0副墊 1 140凹槽 1145電接觸窗 1155繫基座 1170凹槽 1 2 1 5擴充部 1 225連接器 8 7 5間距物 902本體 906研磨表面 909基座 9 1 2空隙部 920導電元件 1000研磨物 1005線圈 1007導電組件 1009第二端 1 0 1 2凹坑 1 0 1 8偏壓件 1026本體 1 050通道 I 060插入件 1075端部 1110研磨表面 II 3 0墊支撐部 1142導電元件 11 50迴圈 1160基材 1210 導電研磨部 1220 研磨支撐部 1 230 導電固定物70 200520893 870 Cross pattern 900 Abrasive material 904 Conductive element 908 Dimple 9 1 0 Mounting part 9 1 3 Conductive sub-element 940 Conductive surface 1 004 Conductive element 1006 Loop 1 008 First end 1010 Second end 1 0 1 4 series wire Base 1 024 polished surface 1 030 connector 1055 channel I 070 groove 1100 abrasive II 2 0 sub-mat 1 140 groove 1145 electrical contact window 1155 series base 1170 groove 1 2 1 5 extension 1 225 connector 8 7 5 pitcher 902 body 906 grinding surface 909 base 9 1 2 void portion 920 conductive element 1000 grinding object 1005 coil 1007 conductive component 1009 second end 1 0 1 2 recess 1 0 1 8 biasing member 1026 body 1 050 channel I 060 Insert 1075 End 1110 Polished surface II 3 0 Pad support 1142 Conductive element 11 50 loops 1160 Base material 1210 Conductive polishing part 1220 Polished support 1 230 Conductive fixture

71 200520893 1 2 3 2導電路徑 1 2 3 6間距物 1240固定物 1 2 7 0研磨物 1 2 8 0研磨部 1 2 8 7導電路徑 1400導電物 1 4 0 4導電部, 1408插槽 1 5 0 0導電物 1 5 04上方部 1 5 1 0彈性組件 1 5 2 2核心 1 6 0 0導電物 1604物支撐部 1 6 0 8黏結層 1 7 0 0導電物 1708巢室 1 8 04物支撐部 1 8 1 2邊緣 1 8 1 6 第二孔洞 1904共中心區域 1 9 1 0電源 1234電聯接器 1 23 8 螺栓 1260支撐部 1 2 7 5導電元件 1 2 8 5電聯接器 1290物支撐部 1402研磨表面 1406研磨元件 1 4 1 0彈性元件 1 502研磨表面 1 5 06滾動物 1 520導電載件 1 524軟性導電材料 1602導電部 1606插入墊 1 6 1 0導電背襯 1706插入墊 1 800導電物 1 806孔徑 1 8 1 4第一孔洞 1902共中心區域 1 906共中心區域71 200520893 1 2 3 2 Conductive path 1 2 3 6 Spacer 1240 Fixing 1 2 7 0 Grinding object 1 2 8 0 Grinding part 1 2 8 7 Conducting path 1400 Conducting object 1 4 0 4 Conducting part, 1408 Slot 1 5 0 0 conductive object 1 5 04 upper part 1 5 1 0 elastic component 1 5 2 2 core 1 6 0 0 conductive object 1604 object support 1 6 0 8 adhesive layer 1 7 0 0 conductive object 1708 nest 1 8 04 object support Part 1 8 1 2 Edge 1 8 1 6 Second hole 1904 Common center area 1 9 1 0 Power 1234 electrical connector 1 23 8 Bolt 1260 support 1 2 7 5 Conductive element 1 2 8 5 Electrical connector 1290 Physical support 1402 Grinding surface 1406 Grinding element 1 4 1 0 Elastic element 1 502 Grinding surface 1 5 06 Roller 1 520 Conductive carrier 1 524 Soft conductive material 1602 Conductive part 1606 Insertion pad 1 6 1 0 Conductive backing 1706 Insertion pad 1 800 Conductive Object 1 806 Aperture 1 8 1 4 First hole 1902 Concentric area 1 906 Concentric area

7272

Claims (1)

200520893 拾、申請專利範圍: 1. 一種用於處理一基材之研磨物,其至少包含: 一織品層;以及 一導電層,置於該織品上並具有一暴露表面用以研磨 一基材。200520893 Patent application scope: 1. An abrasive for treating a substrate, comprising at least: a fabric layer; and a conductive layer, which is placed on the fabric and has an exposed surface for polishing a substrate. 2.如申請專利範圍第1項所述之研磨物,其中該織品更至 少包含: 一編織材料。 3 .如申請專利範圍第2項所述之研磨物,其中該編織材料 係以一軟導電材料塗覆或以一軟導電材料製造之至少 一者。2. The abrasive article according to item 1 of the scope of patent application, wherein the fabric further comprises at least: a woven material. 3. The abrasive according to item 2 of the scope of patent application, wherein the woven material is at least one of coated with a soft conductive material or made of a soft conductive material. 4.如申請專利範圍第3項所述之研磨物,其中該軟導電材 料係由金、錫、把、ίε-錫合金、始、船及金屬合金以 及較銅為軟之陶瓷複合物所組成之群組中選出。 5. 如申請專利範圍第1項所述之研磨物,其中該織品更至 少包含一非織物材料。 6. 如申請專利範圍第1項所述之研磨物,其中該導電層更 至少包含: 73 200520893 軟金屬,其係由金、錫、錫合金、翻、錯及 金屬合金以及較銅為軟之陶瓷複合物所組成之群組令所選 出之至少一種。 7·如申請專利範圍第1項所述之研磨物,其中該導電層更 至少包含一模數及硬度小於銅之模數及硬度。4. The abrasive according to item 3 of the scope of the patent application, wherein the soft conductive material is composed of gold, tin, bar, εε-tin alloy, starting, boat, and metal alloy, and a ceramic composite that is softer than copper. Selected from the group. 5. The abrasive according to item 1 of the patent application scope, wherein the fabric further comprises at least a non-woven material. 6. The abrasive article according to item 1 of the scope of the patent application, wherein the conductive layer further includes at least: 73 200520893 soft metal, which is made of gold, tin, tin alloy, metal, alloy, and softer copper The group of ceramic composites makes at least one selected. 7. The abrasive according to item 1 of the scope of patent application, wherein the conductive layer further comprises at least a modulus and a hardness less than that of copper. 8.如申請專利範圍第1項所述之研磨物,其中該導電層之 暴露表面具有一小於或等於約正或負1毫米之平坦度 以及一小於約500微米之表面粗糙度。 9.如申請專利範圍第1項所述之研磨物,其中該導電層更 至少包含: 數個設於其中之研磨粒子。8. The abrasive article according to item 1 of the scope of patent application, wherein the exposed surface of the conductive layer has a flatness of less than or equal to about positive or negative 1 mm and a surface roughness of less than about 500 microns. 9. The abrasive article according to item 1 of the scope of patent application, wherein the conductive layer further includes at least: a plurality of abrasive particles disposed therein. 1 0.如申請專利範圍第1項所述之研磨物,其中該導電層更 至少包含: 一具凸紋之上表面。 1 1.如申請專利範圍第1項所述之研磨物,其中該導電層更 至少包含: 數個穿孔穿通於其間。 74 200520893 1 2.如申請專利範圍第1項所述之研磨物,其更至少包含: 一窗口 ,其係穿設該導電層及該織品層。 1 3 .如申請專利範圍第1 2項所述之研磨物,其中該窗口更 至少包含: 一透明材料,其係設於該導電層或-該織品層之至少一 者中。10. The abrasive article according to item 1 of the scope of patent application, wherein the conductive layer further comprises at least: a convex surface. 1 1. The abrasive article according to item 1 of the scope of patent application, wherein the conductive layer further comprises at least: a plurality of through holes penetrating therethrough. 74 200520893 1 2. The abrasive article according to item 1 of the scope of patent application, further comprising at least: a window, which penetrates the conductive layer and the fabric layer. 1 3. The abrasive article according to item 12 of the scope of patent application, wherein the window further comprises at least: a transparent material provided in at least one of the conductive layer or the fabric layer. 1 4.如申請專利範圍第1項所述之研磨物,其更至少包含: 一物支撐層,其係由一硬度小於導電層之硬度的介電 材料所製;以及 一插入層,其係耦接於該物支撐層及該導電層之間, 該插入層之硬度大於該物支撐層之硬度。14. The abrasive article according to item 1 of the scope of patent application, further comprising at least: an object support layer made of a dielectric material having a hardness less than that of the conductive layer; and an insert layer, which is Coupled between the object support layer and the conductive layer, the hardness of the insertion layer is greater than the hardness of the object support layer. 1 5 .如申請專利範圍第1 4項所述之研磨物,其中該插入層 具有一小於或等於約80簫式硬度D之硬度;其中該導 電層具有一小於約80簫式硬度D之硬度;且其中該物 支撐層具有一小於或等於約80簫式硬度A之硬度。 1 6 .如申請專利範圍第1 4項所述之研磨物,其中該插入層 更至少包含一聚合物材料。 1 7.如申請專利範圍第1項所述之研磨物,其更至少包含: 75 200520893 一導電背襯,其係耦接至與該導電層相對之織品層。 1 8.如申請專利範圍第1項所述之研磨物,其更至少包含: 裊 一電極,其係耦接至與該導電層相對之織品層。 1 9 .如申請專利範圍第1 8項所述 < 研磨物,其中該電極更 至少包含: 數個可獨立電偏壓之區域。 φ 2 0.如申請專利範圍第1項所述之研磨物,其更至少包含: 數個球體,其係部分地延伸於該導電層之該暴露表面 上方;以及 一軟性導電材料,其係至少部分地覆蓋該等球體。 2 1.如申請專利範圍第20項所述之研磨物,其中該等球體 之至少一者具有一聚合物核心。 22. 如申請專利範圍第1項所述之研磨物,其中該導電層更 至少包含: 一聚合物基(polymer matrix),其具有設於其中之導 * 電材料。 I 23. 如申請專利範圍第22項所述之研磨物,其中該導電材 76 200520893 料係由金 及較銅為 24. 如申請專 料係錫粒 覆銅織 25. 如申請專 料之硬度 26. 如中請專 料更至少 數個導 及鉛之至少, 27. 如中請專 料更至少 〆碳基 28 >申請專 料係下列 奈米管〃 導電纖維 、錫、把、把-錫合金、鉑、鉛及金屬合金以 軟之陶瓷複合物所組成之群組中選出° 利範圍第2 2項所述之研磨物’其中該導電材 子;且其中該織品層更至少包含: 利範圍第22項所述之研磨物’其中該導電材 及模數小於或等於銅之硬度及模數。 利範圍第2 2項所述之研磨物’其中該導電材 包含: 電粒子,其包括金、錫、把、纪-錫合金、鉑 一者0 利範圍第22項所述之研磨物’其中該導電材 包含: 材料。 利範圍第22項所述之研磨物,其中該導電材 之至少一者:導電粒子、碳粉末、碳纖維、碳 良奈米發泡體、碳氣膠(carbon aerogel)、石墨、 、本質為導電性之聚合物、介電材料或以導電15. The abrasive article according to item 14 of the scope of the patent application, wherein the insertion layer has a hardness less than or equal to about 80 Hardness D; wherein the conductive layer has a hardness less than about 80 Hardness D And wherein the support layer has a hardness less than or equal to about 80 A hardness. 16. The abrasive article according to item 14 of the scope of patent application, wherein the interposer further comprises at least one polymer material. 1 7. The abrasive article according to item 1 of the scope of patent application, further comprising: 75 200520893 a conductive backing, which is coupled to a fabric layer opposite to the conductive layer. 1 8. The abrasive article according to item 1 of the scope of patent application, further comprising: 袅 an electrode coupled to a fabric layer opposite to the conductive layer. 19. The abrasive article according to item 18 of the scope of the patent application, wherein the electrode further comprises at least: a plurality of regions that can be electrically biased independently. φ 2 0. The abrasive according to item 1 of the scope of patent application, which further comprises at least: a plurality of spheres which partially extend above the exposed surface of the conductive layer; and a soft conductive material which is at least Partially covering such spheres. 2 1. The abrasive according to item 20 of the patent application, wherein at least one of the spheres has a polymer core. 22. The abrasive article according to item 1 of the patent application scope, wherein the conductive layer further comprises at least: a polymer matrix having a conductive material provided therein. I 23. The abrasive according to item 22 of the scope of the patent application, wherein the conductive material 76 200520893 is made of gold and copper than 24. If applying for special materials is tin-clad copper cladding 25. If applying for hardness of special materials 26. If you ask for more than at least several lead and at least lead, 27. If you want for more than at least 〆 carbon-based 28 > Apply for the following materials for nano tube: conductive fiber, tin, handle, handle- Among the group consisting of tin alloys, platinum, lead and metal alloys made of soft ceramic composites, the abrasive material described in item 22 of the scope of interest, wherein the conductive material is used, and wherein the fabric layer further includes: The abrasive article according to Item 22, wherein the conductive material and the modulus are less than or equal to the hardness and modulus of copper. The abrasive article according to item 22 of the present invention, wherein the conductive material includes: electric particles, which include gold, tin, aluminum, titanium-tin alloy, and platinum. The conductive material includes: a material. The abrasive article according to Item 22, wherein at least one of the conductive materials: conductive particles, carbon powder, carbon fiber, carbon liangnan foam, carbon aerogel, graphite, Conductive polymers, dielectric materials or conductive 77 200520893 材料塗覆之導電粒子、塗有導電材料之介電填料材料、 導電無機粒子、金屬粒子、導電陶瓷粒子及其組合物。 29· —種用於處理一基材之研磨物,其至少包含: 一導電層,其具有一適於研磨一基材之上研磨表面; 一物支撐層,其係由一硬度小於導電層之硬度的介電 材料所製; 一插入層’其係耗接於該物支標層及該導電層之間, 且該插入層之硬度大於該物支撐層之硬度;以及 數個孔徑,其係穿通該導電層、插入層以及物支撐 層,該等孔徑之至少一者具有一形成於該導電層之上表面 之第一孔洞以及一形成於其下之第二孔洞,其中該第一孔 洞具有一大於該第二孔洞之直徑。 30·如申請專利範圍第29項所述之研磨物,其中該導電層 更至少包含: 一研磨層,其係適於研磨其上之基材,且該研磨層至 少包含一設於一聚合物結合劑中之導電材料。 31·如申睛專利範圍第3〇項所述之研磨物,其更至少包含: ** 數個設於該聚合物結合劑中之研磨粒子。 、 32·如申請專利範圍第30項所述之研磨物,其中該導電層 78 200520893 更至少包含: 一織品層,其係設於該研磨層之下。 3 3 .如申請專利範圍第29項所述之研磨物,其更至少包含: 一電極,其具有數個可獨立偏壓之區域。77 200520893 Conductive particles coated with materials, dielectric filler materials coated with conductive materials, conductive inorganic particles, metal particles, conductive ceramic particles, and combinations thereof. 29 · —An abrasive for treating a substrate, comprising at least: a conductive layer having a grinding surface suitable for grinding on a substrate; a support layer made of a material having a hardness less than that of the conductive layer Made of a hard dielectric material; an insertion layer 'is connected between the object support layer and the conductive layer, and the hardness of the insertion layer is greater than the hardness of the object support layer; and several apertures, which are Through the conductive layer, the insertion layer and the physical support layer, at least one of the apertures has a first hole formed on the upper surface of the conductive layer and a second hole formed below it, wherein the first hole has A diameter larger than the second hole. 30. The abrasive article according to item 29 of the scope of patent application, wherein the conductive layer further comprises at least: an abrasive layer adapted to grind a substrate thereon, and the abrasive layer comprises at least one polymer disposed on a polymer Conductive material in the binder. 31. The abrasive article as described in item 30 of the Shenyan patent scope, further comprising at least: ** a plurality of abrasive particles provided in the polymer binder. 32. The abrasive article according to item 30 of the scope of patent application, wherein the conductive layer 78 200520893 further includes at least: a fabric layer disposed under the abrasive layer. 3 3. The abrasive according to item 29 of the scope of patent application, further comprising: an electrode having a plurality of regions that can be independently biased. 34.如申請專利範圍第 33項所述之研磨物,其中該導電 層、該物支撐層及該電極係形成於一單件可替換組件 中 〇 35. —種用於處理一基材之研磨物,其至少包含: 一導電層,其具有一適於研磨一基材之上研磨表面; 一物支撐層,其係由一硬度小於該導電層之硬度之介 電材料所製;34. The abrasive article according to item 33 of the scope of patent application, wherein the conductive layer, the object support layer and the electrode are formed in a single replaceable component. 35. A kind of abrasive for processing a substrate An object includes at least: a conductive layer having a grinding surface suitable for grinding on a substrate; an object supporting layer made of a dielectric material having a hardness less than that of the conductive layer; 一插入層,其係耦接於該物支撐層及該導電層間,且 該插入層之硬度大於該物支撐層之硬度; 一電極,其係耦接至與該插入層相對之該物支撐層; 以及 一窗口,其係穿通該電極、該導電層、該插入層以及 該物支撐層,其中該電極、該導電層、該插入層及該物支 撐層可形成一單一可替換單元。 3 6.如申請專利範圍第3 5項所述之研磨物,其更至少包含: 79 200520893 數個孔徑,其係穿通該導電層、該插入層及該物支撐 層之至少一者,且該·等孔徑之至少一者具有一形成於該導 電層中之第一孔洞、一形成於該插入層中之第二孔洞以及 一形成於該物支撐層中之第三孔洞,其中該第一孔洞之直 徑大於該第二孔洞之直徑。An insert layer is coupled between the object support layer and the conductive layer, and the hardness of the insert layer is greater than the hardness of the object support layer; an electrode is coupled to the object support layer opposite to the insert layer. And a window penetrating the electrode, the conductive layer, the insertion layer, and the object support layer, wherein the electrode, the conductive layer, the insertion layer, and the object support layer can form a single replaceable unit. 3 6. The abrasive article as described in item 35 of the scope of patent application, further comprising at least: 79 200520893 several apertures, which pass through at least one of the conductive layer, the insertion layer and the object support layer, and the At least one of the isopores has a first hole formed in the conductive layer, a second hole formed in the insertion layer, and a third hole formed in the object support layer, wherein the first hole The diameter is larger than the diameter of the second hole. 3 7 .如申請專利範圍第3 6項所述之研磨物,其中該電極更 至少包含: 數個可獨立電偏壓之區域。 38. 如申請專利範圍第36項所述之研磨物,其中該導電層 更至少包含: 一第一層,其係設於該物支撐層上;以及 一第二層,其至少包含設於一聚合物基中之導電材 料,而該第二層係設於該第一層上。37. The abrasive according to item 36 of the scope of patent application, wherein the electrode further comprises: at least several regions that can be electrically biased independently. 38. The abrasive article according to item 36 of the scope of patent application, wherein the conductive layer further comprises at least: a first layer provided on the support layer of the object; and a second layer including at least A conductive material in a polymer matrix, and the second layer is disposed on the first layer. 39. 如申請專利範圍第38項所述之研磨物,其中該導電材 料係由金、錫、Is、ίε-錫合金、始、錯及金屬合金以 _及較銅為軟之陶瓷複合物所組成之群組中選出。 8039. The abrasive article according to item 38 of the scope of the patent application, wherein the conductive material is a ceramic composite made of gold, tin, Is, ε-tin alloy, alloy, metal alloy and copper, which is softer than copper Select from the group. 80
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CN116065225B (en) * 2023-03-31 2023-06-16 太原理工大学 Electrolytic polishing device for inner wall of special-shaped micro-fine tube

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