KR20060055463A - Conductive polishing article for electrochemical mechanical polishing - Google Patents

Abstract

Embodiments of a polishing article for processing a substracte are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer may be woven or non-woven. The conductive layer may be comprised of a soft material and, in one embodiment, the exposed surface may be planar.

Description

Conductive polishing article for electrochemical mechanical polishing {CONDUCTIVE POLISHING ARTICLE FOR ELECTROCHEMICAL MECHANICAL POLISHING}

The present invention relates to an apparatus and a manufacturing part for planarizing a substrate surface.

Multi-level metallization of less than 1/4 micron is one of the key technologies in the next generation of ultra-scale integration (ULSI). Multilayer interconnects at the heart of this technology require planarization of interconnect features formed in high aspect ratio openings including contacts, vias, lines, and other features. Reliable formation of such interconnect features is critical to achieving ULSI and continuing efforts to increase circuit density and quality at each substrate and die.

In the manufacture of integrated circuits and other electronic devices, a plurality of layers of conductive, semiconductor, and dielectric materials are attached or removed from the surface of the substrate. Thin layers of conductive, semiconductor, and dielectric materials can be attached by a number of attachment methods. Common methods of attachment in recent processing include physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), and electrochemical plating (ECP), also known as sputtering.

As the layers of material are continuously attached and removed, the top surface of the substrate becomes non-planar across the surface and hence planarization is required. Surface planarization, or "polishing" of a surface, is the process of removing material from the surface of a substrate to form a generally flat planar surface. Planarization is useful for removing undesired surface defects and surface topography such as rough surfaces, aggregated materials, crystal lattice damage, scratches, and contaminating layers or materials. Planarization is also useful for forming features on a substrate by providing a uniform surface for metallization and subsequent levels of processing and by removing excess adhesion material used to fill the features.

Chemical mechanical planarization, or chemical mechanical polishing (CMP), is a common technique used to planarize a substrate. CMP uses a chemical composition, typically a slurry or other fluid medium, to selectively remove material from the substrate. In conventional CMP technology, the substrate carrier or polishing head is mounted on the carrier assembly and positioned to contact the polishing pad within the CMP apparatus. The carrier assembly provides controllable pressure to the substrate, thereby pressing the substrate against the polishing pad. The pad is moved relative to the substrate by an external driving force. CMP devices cause polishing or frictional motion between the substrate surface and the polishing pad while dispersing the polishing composition, resulting in chemical and / or mechanical action and result in the removal of material from the substrate surface.

One material that is increasingly used in integrated circuit fabrication is copper, which is due to the desirable electrical properties of copper. However, copper has its own manufacturing problems. For example, copper is difficult to pattern and etch, and copper substrate features are formed using new processes and techniques such as damascene or dual damascene processes.

In the damascene process, the features are formed in the dielectric material and then filled with copper. Dielectric materials having a low dielectric constant, ie, less than about 3, are used to make copper damascene. The barrier layer material is deposited conformally on the surface of the features formed in the dielectric layer prior to the deposition of the copper material. Subsequently, a copper material is deposited over the barrier layer and the surrounding field. However, filling the features with copper generally results in excessive copper material or overburden on the substrate surface, and such excess to form copper filled features in the dielectric material and provide the substrate surface for subsequent processing. Copper material or overcharging should be removed.

One challenge in polishing copper material is that the interface between the conductive material and the barrier layer is generally non-flat and the copper material remains in the irregularities formed by such non-flat interfaces. In addition, conductive materials and barrier materials are often removed from the substrate surface at different rates, and these two problems can leave excess conductive material on the substrate surface as a residue. Also, depending on the density or size of the features formed on the substrate surface, the substrate surface may have various surface topography. The copper material is removed at various removal rates according to various surface topography of the substrate surface, which makes it difficult to effectively remove copper from the substrate surface and the final planarization of the substrate surface.

One solution for removing all of the copper material to be removed from the substrate surface is to overpolize the substrate surface. However, overpolishing of some materials may create topographical defects, such as depressions or depressions in features called dishing, or over removal of dielectric material called erosion. In addition, topographical defects by dishing and erosion may result in non-homogeneous removal of additional materials, such as barrier layer material deposited thereunder, and may create substrate surfaces that do not meet the desired polishing quality.

Another problem associated with polishing of copper surfaces is caused by using low dielectric constant (low k) dielectric materials to form copper damascene in the substrate surface. Low k dielectric materials, such as copper doped silicon oxide, will deform or break under conventional polishing pressures (ie, about 6 psi), referred to as downforce, which will adversely affect substrate polishing quality and also result in device formation. Will have a bad effect. For example, the relative rotational motion between the substrate and the polishing pad can induce shear forces along the substrate surface and deform the low k material to form topographic defects, which can adversely affect subsequent polishing. have.

Another solution for polishing copper in low dielectric materials is electrochemical mechanical polishing (ECMP). ECMP technology removes conductive material from the substrate surface by electrochemical dissolution, while simultaneously polishing the substrate with less mechanical wear compared to conventional CMP processes. Electrochemical dissolution is accomplished by applying a bias between the cathode and the substrate surface to remove the conductive material from the substrate surface to the surrounding electrolyte.

In one embodiment of the ECMP system, the bias is applied by a ring of conductive contacts in electrical communication with the substrate surface in a substrate support device, such as a substrate carrier head. However, the contact ring has not been shown to distribute the current evenly across the substrate surface, which results in non-homogeneous dissolution, especially during overpolishing, and the conductive contact ring does not effectively remove the conductive residual material of the substrate being polished. . Mechanical wear is achieved by placing the substrate in contact with a conventional polishing pad and imparting relative motion therebetween. However, conventional polishing pads often limit the flow of electrolyte to the substrate surface. In addition, the polishing pad will be made of an insulating material, which prevents the application of a bias to the substrate surface, causing the material to dissolve non-homogeneously or inconsistently.

As a result, there is a need for an improved polishing article for removing conductive material on the substrate surface.

The present invention provides apparatus and fabrication components for planarizing layers on a substrate using electrochemical deposition techniques, electrochemical dissolution techniques, polishing techniques, and / or combinations thereof.

In one aspect, a polishing article for polishing a substrate includes a body having a surface for polishing the substrate and at least one conductive element embedded at least partially within the body. The conductive element may comprise a fiber that can be coated with a conductive material, a conductive filler, or a combination thereof and disposed within the binder material. The conductive element comprises a fabric of interwoven fibers coated and interwoven with a conductive material at least partially embedded in the body, a fiber composite coated with a conductive material, a conductive filler, or a combination thereof, and at least partially within the body. Embedded binders. The conductive element has a contact surface extending beyond the plane formed by the polishing surface and may comprise a coil, one or more loops, one or more strands, interwoven fabric of materials, or a combination thereof. Multiple perforations and multiple grooves can be formed in the polishing article to help the material flow through and across the polishing article.

In another aspect, a polishing article is provided for processing a substrate surface, such as a conductive layer attached on the substrate surface. The polishing article includes a body comprising at least a portion of the fiber coated with a conductive material, a conductive filler, or a combination thereof to polish the substrate. A plurality of perforations and a plurality of grooves are formed in the polishing article to facilitate the flow of material through the polishing article and around the polishing article.

In another aspect, a polishing article may be disposed within a substrate processing apparatus, the substrate processing apparatus comprising a basin, a transmissive disk disposed within the basin, a fabrication part or polishing article disposed on the transmissive disk, the An electrode disposed in the basin between the permeable disk and the bottom of the basin, and a polishing head that holds the substrate during processing.

In another aspect, the polishing article can be used as a conductive polishing article in a substrate processing method, the substrate processing method providing an apparatus comprising an enclosure, positioning a conductive polishing article within the enclosure, per minute Supplying the electrically conductive solution to the enclosure at a flow rate of about 20 gallons (GPM) or less, positioning the substrate adjacent to the conductive polishing article in the electrically conductive solution, and removing the surface of the substrate in the electrically conductive solution. Contacting the conductive polishing article, applying a bias between the conductive polishing article and the electrode, and removing at least a portion of the substrate surface.

In another embodiment of the present invention, the polishing article for processing the substrate comprises an intermediate layer bonded between the dielectric support layer and the conductive layer. The conductive layer has an exposed surface that is employed to clean the substrate. The support layer has a smaller hardness than the conductive layer but the intermediate layer has a greater hardness than the support layer.

In another embodiment of the present invention, the polishing article for processing the substrate comprises an intermediate layer bonded between the conductive layer and the support layer. At least one aperture formed through the conductive layer, the intermediate layer and the support layer includes a first hole formed in the conductive layer with a diameter larger than the second hole formed in the intermediate layer and the support layer.

DETAILED DESCRIPTION In the following, more specific description of the invention briefly described above is described with reference to the embodiments shown in the accompanying drawings, in order that the above-mentioned aspects of the invention may be understood in more detail.

However, the accompanying drawings show only typical embodiments of the invention and should not be regarded as limiting the scope of the invention. The invention may be embodied in other equivalent effective embodiments.

1 is a plan view of one embodiment of a processing apparatus of the present invention.

2 is a cross-sectional view of one embodiment of an ECMP station.

3 is a partial cross-sectional view of one embodiment of a polishing article.

4 is a plan view of one embodiment of a grooved polishing article.

5 is a plan view of another embodiment of a grooved polishing article.

6 is a plan view of another embodiment of a grooved polishing article.

7A is a top view of a conductive fabric or fiber.

7B and 7C are partial cross-sectional views of a polishing article having a polishing surface comprising a conductive fabric or fiber.

7D is a partial cross-sectional view of one embodiment of a polishing article comprising a metal foil.

FIG. 7E illustrates another embodiment of a polishing article comprising a fabric material.

7F illustrates another embodiment of a polishing article with a window formed thereon.

8A and 8B are plan and cross-sectional views of one embodiment of a polishing article having conductive elements.

8C and 8D are plan and cross-sectional views of one embodiment of a polishing article with conductive elements.

9A and 9B are perspective views of another embodiment of a polishing article with conductive elements.

10A is a partial perspective view of another embodiment of a polishing article.

10B is a partial perspective view of another embodiment of a polishing article.

10C is a partial perspective view of another embodiment of a polishing article.

10D is a partial perspective view of another embodiment of a polishing article.

10E is a partial perspective view of another embodiment of a polishing article.

11A-11C are schematic diagrams illustrating one embodiment of a substrate in contact with one embodiment of a polishing article.

12A-12D are plan and side views illustrating embodiments of a polishing article having an extension coupled to a power source.

12E and 12F are side and perspective views of another embodiment for providing power to a polishing article.

13A and 13B are top and side views of another embodiment of a conductive article.

14A and 14B are top and side views of another embodiment of a conductive article.

15-17 are cross-sectional views of alternative embodiments of conductive articles.

18 is a plan view of one embodiment of an electrode.

For ease of understanding, the same elements that are common throughout the figures are represented by the same reference numerals as much as possible.

Unless otherwise specified, words and phrases used herein are to be interpreted in a general and customary sense to those skilled in the art. Chemical-mechanical polishing should be interpreted broadly and illustratively includes wear of the substrate surface by chemical action, mechanical action, or a combination of mechanical and chemical action. Electrical polishing should be construed broadly and illustratively includes planarizing the substrate by application of electrochemical action such as anode dissolution.

Electrochemical Mechanical Polishing (ECMP) involves, but is not limited to, the process of planarizing a substrate by electrochemical, chemical, mechanical, or a combination of electrochemical, chemical and mechanical actions to remove material from the substrate surface. It should be construed broadly as inclusive.

The electrochemical mechanical plating process (ECMPP) is, but is not limited to, electrochemically depositing a material on a substrate and depositing it by electrochemical, chemical, mechanical, or a combination of electrochemical, chemical and mechanical actions. It should be broadly interpreted as including the process of uniformly flattening the material.

Anodic dissolution should be broadly interpreted as including, but not limited to, the process of directly or indirectly applying an anode bias to the substrate to allow the conductive material to move from the substrate surface to the surrounding electrolyte. The polishing surface is broadly defined as part of an article that electrically connects the article to the substrate surface indirectly through an electrically conductive medium or directly through a contact, or that at least partially contacts the substrate surface during processing.

polishing  Device

1 illustrates electrochemical deposition and chemical mechanical polishing, such as one or more conventional polishing or buffing stations 106 and electrochemical mechanical polishing (ECMP) stations 102 disposed on a single platform or tool. A processing apparatus 100 with one or more stations is shown. One polishing tool that can employ the advantages of the present invention is MIRRA ^® Mesa ^™, available from Applied Materials, Inc., Santa Clara, CA. Chemical mechanical polishing machine.

For example, in the device 1 shown in FIG. 1, the device 100 comprises two ECMP stations 102 and one polishing station 106. These stations can be used for substrate surface processing. For example, a substrate having feature definitions formed therein, filled with a barrier layer, and then having a conductive material deposited thereon, is removed in two steps at the two ECMP stations 102. The barrier layer is then polished at the polishing station 106 to form a flat surface.

In general, the exemplary device 100 includes a base 108 that supports one or more ECMP stations 102, one or more polishing stations 106, a transfer station 110, and a carousel 112. ). In general, the transfer station 110 facilitates transfer of the substrate 114 to / from the device 100 via the loading robot 116. Typically, the loading robot 116 comprises a substrate 114 with a factory interface 120 and a transfer station 110 that includes a cleaning module 122, a metrology device 104, and one or more substrate storage cassettes 118. ). One example of the metrology device 104 is a NovaScan ^™ integrated thickness monitoring device available from Nova Measuring Instruments, Inc., of Phoenix, Arizona.

Optionally, the loading robot 116 (or factory interface 120) may transfer the substrate to one or more other processing tools (not shown), such as chemical vapor deposition tools, physical vapor deposition tools, etching tools, and the like. .

In one embodiment, the transfer station 110 includes at least an input buffer station 124, an output buffer station 126, a transfer robot 132 and a load cup assembly 128. The loading robot 116 places the substrate 114 on the input buffer station 124. The transfer robot 132 has two gripper assemblies, each gripper assembly having a pneumatic gripper finger that holds the substrate by holding the edge of the substrate 114. The transfer robot 132 lifts the substrate 114 from the input buffer station 124, rotates the gripper and the substrate 114 to position the substrate 114 over the load cup assembly 128, and then the substrate 114. ) Into the rod cup assembly 128.

In general, the carousel 112 supports a plurality of polishing heads 130, each polishing head holding one substrate 114 during processing. The carousel 112 transfers the polishing head 130 between the transfer station 110, the one or more ECMP stations 102 and the one or more polishing stations 106. One carousel 112, which may employ the advantages of the present invention, is disclosed in US Pat. No. 5,804,507 to Toles et al. On Sep. 8, 1998, which is incorporated herein by reference in its entirety.

In general, the carousel 112 is disposed at the center of the base 108. Typically, the carousel 112 includes a plurality of arms 138. In general, each arm 138 supports one of the polishing heads 130. In order for the transport station 110 to be visible, one of the arms 138 is not shown in FIG. 1. The carousel 112 may be indexed such that the polishing head 130 may move to the stations 102 and 106 and the transfer station 110 in a sequence defined by the user.

Generally, the polishing head 130 holds the substrate 114 when the substrate 114 is disposed at the ECMP station 102 or the polishing station 106. The arrangement of the ECMP station 106 and the polishing station 102 in this arrangement allows the substrate 114 to be plated or polished sequentially by moving between stations while the substrate is held by the same polishing head 130. . One polishing head that can adopt the advantages of the present invention is TITAN HEAD ^™ manufactured by Applied Materials, Inc., Santa Clara, CA. Substrate carrier.

An embodiment of a polishing head 130 that can be used with the polishing apparatus 100 disclosed herein is disclosed in US Pat. No. 6,183,354, issued June 6, 2001 to Juniga et al., Which is incorporated herein by reference in its entirety. It became.

In order to easily control the polishing apparatus 100 and the processes performed by it, a controller 140 including a central processing unit (CPU) 142, a memory 114 and a support circuit 146 is provided with a polishing apparatus ( 100). The CPU 142 may be one of any type of computer processor that can be used in industrial devices that control various drives and pressures. The memory 144 is connected to the CPU 142. The memory 144 or computer readable medium may be one or more of RAM, ROM, floppy disk, hard disk or any other form of readily available memory, such as digital storage, local, remote or the like. The support circuit 146 is coupled to the CPU 142 to support the processor in a conventional manner. These circuits include caches, power supplies, clock circuits, input / output circuits, subsystems, and the like.

Power for operating the polishing apparatus 100 and / or the controller 140 is provided by the power supply 150. Schematically, the power supply 150 is shown connected to various elements of the polishing apparatus 100, including the transfer station 110, the factory interface 120, the loading robot 116, and the controller 140. . In another embodiment, a separate power supply is provided for two or more elements of the polishing apparatus 100.

2 shows a cross section of the polishing head 130 supported above the ECMP station 102. In general, the ECMP station 102 includes a basin 202, an electrode 204, a polishing article 205, a disk 206 and a cover 208. In one embodiment, the basin 202 is connected to the base 108 of the polishing apparatus 100. Generally, the basin 202 forms a container or electrolyte cell in which a conductive fluid such as electrolyte 220 can be accommodated. The electrolyte 220 used for processing the substrate 114 may be copper, aluminum, tungsten, gold, silver or any other material that may be electrochemically deposited on or removed from the substrate 114. It can be used to process metals such as

The basin 202 may be a bowl-shaped member made of plastic, such as a fluoropolymer, TEFLON ^® , PFA, PE, PES or any other material that is compatible with electroplating and electropolishing chemistry. The basin 202 has a bottom portion 210 including a through hole 216 and a drain 214. In general, the through hole 216 is disposed at the center of the bottom portion 210 and allows the shaft 212 to pass therethrough. A seal 218 is disposed between the through hole 216 and the shaft 212 to allow the shaft 212 to rotate and to prevent the fluid in the basin 202 from passing through the through hole 216. do.

Typically, the basin 202 includes an electrode 204, a disk 206 and a polishing article 205 disposed therein. A polishing article 205, such as a polishing pad, is disposed and supported on the disk 206 of the basin 202.

The electrode 204 is a counter-electrode for the substrate 114 and / or the polishing article 205 in contact with the substrate surface. The polishing article 205 is at least partially conductive and may serve as an electrode in combination with the substrate during electrochemical processing such as electrochemical mechanical plating process (ECMPP) or electrochemical dissolution including electrochemical deposition and chemical mechanical polishing. have. The electrode 204 may be an anode or a cathode depending on a positive bias (anode) or a negative bias (cathode) applied between the electrode 204 and the polishing article 405.

For example, in depositing material from an electrolyte onto a substrate surface, the electrode 204 serves as an anode and the substrate surface and / or polishing article 205 serves as a cathode. When removing material from the substrate surface by dissolution from an applied bias, the electrode 204 acts as a cathode and the substrate surface and / or polishing article 205 can act as a cathode of the dissolution process.

In general, the electrode 204 is located between the disk 206 and the bottom portion 210 of the basin 202 and may be immersed in the electrolyte 220. The electrode 204 may be a plate member, a plate through which a plurality of holes are formed, or a plurality of electrode pieces disposed in a transparent thin film or a container. A transparent thin film (not shown) is disposed between the disk 206 and the electrode 204 or between the electrode 204 and the polishing article 205 to filter bubbles such as hydrogen bubbles, to form a water surface to reduce defect formation, The current or power between them is stabilized or applied more uniformly.

In the electrodeposition process, the electrode 204 is made of a material that is deposited or removed, such as copper, aluminum, gold, silver, tungsten, and other materials that can be electrochemically deposited on the substrate 114. In electrochemical removal processes such as anodic dissolution, the electrode 204 may comprise a non-consumable electrode made of a material other than the deposited material, such as stainless steel, platinum, carbon or aluminum, for copper dissolution, for example.

18 is a top view of one embodiment of an electrode 204 with multiple regions that are independently electrically biased. The region facilitates control of the profiled current in the lateral width of the processing cell, thereby controlling material removal (or deposition) at the substrate diameter. In the embodiment shown in FIG. 18, the electrode 204 includes three concentric regions 1902, 1904, 1906 that are independently biasable by a power source 1910. The regions 1902, 1904, and 1906 may be separated by an insulating spacer 1908. Although the regions 1902, 1904, 1906 are shown in FIG. 18 as concentric rings, the regions may be other structures, such as, for example, radial arrangements, sectors, arcs, gratings, strips, islands and wedges.

The polishing article 205 may be a pad, web or belt made of a material that can be matched to the fluid environment and processing details. In the embodiment shown in FIG. 2, the polishing article 205 is circular, located on top of the basin 202, and supported by the disk 206 at the bottom. The polishing article 205 includes at least partially conductive surface made of a conductive material, such as one or more conductive elements, for contact with the substrate surface during processing. The polishing article 205 may be part or all of a conductive polishing material, or may be a composite in which a conductive polishing material is disposed on or embedded in a conventional polishing material. For example, the conductive material may be disposed on a “backing” material disposed between the disk 206 and the polishing article 205 to suit the compliance and / or hardness of the polishing article 205 during processing. have.

The basin 202, cover 208 and disk 206 may be movably disposed on the base 108. The basin 202, cover 208 and disk 206 provide a clearance of the polishing head 130 when the carousel 112 indexes the substrate 114 between the ECMP and polishing stations 102 and 106. It can be moved axially towards the base 108 to facilitate the. The disk 206 is disposed in the basin 202 and connected to the shaft 202. Generally, the shaft 212 is connected to a motor 224 disposed below the base 108. The motor 224 rotates the disk 206 at a predetermined speed in response to a signal from the controller 140.

The disk 206 may be a perforated article support made of a material that is compatible with the electrolyte 220 which does not adversely affect polishing. The disk 206 may be made from a polymer, such as a fluoropolymer, PE, TEFLON, PFA, PES, HDPE, UHMW, or equivalent thereof. The disk 206 may be secured in the basin 202 by fitting with a fastener such as a screw or other means such as a snap or enclosure, and may be suspended therein. Preferably, the disk 206 is spaced apart from the electrode 204 to provide a wider process window, thus lowering the sensitivity of the material removed and the material removed from the substrate surface to the electrode 204.

Generally, the disk 206 is permeable to the electrolyte solution 220. In one embodiment, the disk 206 includes a plurality of perforations or channels 222 formed therein. The perforation includes a passage formed through an object, such as a through hole, a hole, an opening or a partially or completely polishing article. The size and density of the perforations are selected to evenly distribute the electrolyte 220 with respect to the substrate 114 through the disk 206.

In one aspect of the disk 206, the perforations having a diameter of about 0.02 inch (0.5 mm) to about 0.4 inch (10 mm). The perforations may have a perforation density of about 20% to about 80% of the polishing article. A puncture density of about 50% was observed to provide electrolyte flow with minimal deleterious effects on the polishing process. In general, the perforations of polishing article 205 and disk 206 are aligned to provide sufficient electrolyte mass flow to the substrate surface through disk 206 and polishing article 205. The polishing article 205 may be disposed on the disk 206 by a mechanical clamp or conductive adhesive.

Although the polishing article is disclosed herein for an electrochemical mechanical polishing (ECMP) process, the present invention contemplates the use of conductive polishing articles in other manufacturing processes related to electrochemical action. An example of a process using an electrochemical action is an electrochemical deposition in which the polishing article 205 is used in applying a uniform bias to the substrate surface to deposit conductive material without using conventional bias application devices such as edge contacts. And an electrochemical mechanical plating process (ECMPP) comprising a combination of electrochemical deposition and chemical mechanical polishing.

In operation, the polishing article 205 is disposed on the disk 206 in the electrolyte in the basin 202. A substrate 114 on the polishing head is disposed in the electrolyte and in contact with the polishing article 205. The electrolyte flows through the perforations of the disk 206 and the polishing article 205 and is distributed to grooves formed on the substrate surface. Then, power from the power source is applied to the conductive polishing article 205 and the electrode 204, and the conductive material such as copper in the electrolyte is removed by the anode dissolving method.

The electrolyte 220 flows from the reservoir 233 to the space 232 through the nozzle 270. The overflow of the electrolyte 220 from the space 232 is prevented by the plurality of holes 234 disposed in the skirt 254. In general, the hole 234 provides a passage through the cover 208 for the electrolyte solution 220 flowing out of the space 232 to the lower portion of the basin 202. In general, at least a portion of the hole 234 is located between the lower surface 236 and the central portion 252 of the groove portion 258. Typically, since the hole 234 is higher than the lower surface 236 of the groove 258, the electrolyte 220 fills the space 232, thereby contacting the substrate 114 and the polishing medium 205. Done. Thus, the substrate 114 maintains contact with the electrolyte 220 over the entire range of the relative spacing between the cover 208 and the disk 206.

The electrolyte 220 collected in the vessel 202 generally flows into the fluid delivery system 272 through the outlet 214 disposed in the bottom 210. Fluid delivery system 272 typically includes a reservoir 233 and a pump 242. Electrolyte 220 flowing into fluid delivery system 272 is collected in reservoir 233. Pump 242 delivers electrolyte 220 from reservoir 233 via supply line 244 to nozzle 270 where electrolyte 220 is recycled through ECMP station 102. Filter 240 is generally disposed between reservoir 233 and nozzle 270 to remove particles and aggregates that may be present in electrolyte 220.

The electrolyte may comprise a commercially available electrolyte. For example, in copper containing material removal, the electrolyte may comprise a phosphate based electrolyte, such as a sulfuric acid based electrolyte or potassium phosphate (K 3 PO 4), or a combination thereof. The electrolyte may also include sulfuric acid based electrolyte derivatives, such as copper sulfate, and phosphoric acid based electrolyte derivatives, such as copper phosphate. Electrolytes with perchloric acid-acetic acid solutions and derivatives thereof may also be used.

Additionally, the present invention contemplates using electrolyte compositions commonly used in electroplating or electropolishing processes, including commonly used electroplating or electropolishing additives, such as polishes. One source of electrolytes used for electrochemical processes such as copper plating, copper anode melting, or combinations thereof is the division of Rohm and Haas, headquartered in Philadelphia, Pennsylvania, under the trade name Ultrafill 2000. Shipley Leonel. Suitable electrolyte combinations are disclosed in US patent application 10 / 038,066, which is incorporated herein by reference in its entirety and filed on January 3, 2002.

The electrolyte is provided to an electrochemical cell to provide a dynamic flow rate between the substrate surface or the substrate surface and the electrode at a flow rate of up to about 20 gallons per hour (GPM), for example from about 0.5 GPM to about 20 GPM, for example 2 GPM. . This electrolyte flow rate has been believed to allow the removal of abrasive materials and chemical by-products from the substrate surface to allow the filling of electrolyte materials for improved polishing rates.

In mechanical polishing in the polishing process, the substrate 114 and polishing article 205 are rotated with each other to remove material from the substrate surface. Mechanical polishing can be provided by physical contact with the conventional abrasive materials and conductive abrasive materials described above. Substrate 114 and polishing article 205 are each rotated at about 5 rpm or greater, for example from about 10 rpm to about 50 rpm.

In one embodiment, a high rotational speed polishing process is used. The high rotational speed process includes rotating the polishing article 205 at about 150 rpm or greater plate speed, for example from about 150 rpm to about 750 rpm, wherein the substrate 114 is from about 150 rpm to It may be rotated at about 500 rpm, for example from about 300 rpm to about 500 rpm. Further description of the high rotational speed polishing process that may be used with the polishing articles, processes, and apparatus described above, filed on July 25, 2001, entitled "Method and Apparatus for Chemical Mechanical Polishing of Semiconductor Substrates", US patent application 60 / 308,030. Other movements can also be performed during the process, including sweeping motion or trajectory movement across the substrate surface.

When in contact with the substrate, it is applied between the polishing article 205 and the substrate surface that is at a pressure of about 6 psi or less, for example 2 psi or less. When the substrate comprising the low dielectric constant material is polished, a pressure of about 2 psi or less, for example 0.5 psi or less, is used to press the substrate 114 against the polishing article 205 during the substrate polishing process. In one aspect, a pressure between about 0.1 psi or less and 0.2 psi may be used in the abrasive substrate in conjunction with the conductive polishing article described above.

In anodization, a potential difference or bias is applied between the electrode 204 and the polishing surface 310 (see FIG. 3) of the polishing article 205 serving as the anode, acting as a cathode. . The substrate in contact with the polishing article is polarized through the conductive polishing surface article 310 and at the same time a bias is applied to the conductive article support member. Application of the bias allows removal of conductive material, such as copper containing material formed on the substrate surface. Biasing includes applying a voltage of about 15 volts or less to the substrate. A voltage of about 0.1 volts to about 10 volts can be used to decompose the copper containing material from the substrate surface into the electrolyte. The bias is also about 0.1 milliampere / cm ² Current densities of from about 50 milliamps / cm ² , or from about 0.1 amps to about 20 amps per 200 mm.

The signal supplied by the power supply 150 to form the potential difference to perform the anodization process may vary depending on the requirements for removing material from the substrate surface. For example, a time varying anode signal can be provided to the conductive abrasive medium 205. The signal can also be applied by electric pulse modularization techniques. The electric pulse modularization technique applies a constant current density or voltage across the substrate for a first time period, then applies a constant counter voltage or stops applying voltage for a second time period, and repeats the first and second steps. It includes. For example, the electric pulse modularization technique may use a potential that varies from about −0.1 volts to about −15 volts to about 0.1 volts to about 15 volts.

By biasing the substrate from the polishing article 205 with a density and perforation pattern on the polishing medium, it is possible to bias the substrate from the polishing article 205 into the electrolyte from the substrate as compared to lower center removal rates and higher edge removal rates from conventional edge contact-pin bias. It has been believed to provide uniform decomposition of conductive materials, such as metals.

The conductive material, such as copper containing material, may be removed from at least a portion of the substrate at a rate of about 15000 kPa / min or less, for example from about 100 kPa / min to about 15000 kPa / min. In one embodiment of the invention, wherein the copper material to be removed is about 12000 kW thick, a voltage may be applied to the conductive polishing article 205 to provide a removal rate of about 100 kW / min to about 8000 kW / min.

Following the electropolishing process, the substrate may be further polished or buffed to remove barrier layer material, to remove surface defects from the dielectric material, or to improve the flatness of the polishing process using conductive polishing articles. Suitable buff polishing processes and construction examples are disclosed in US patent application Ser. No. 09 / 569,968, filed May 11, 2000, and co-pended herein.

Polishing article material

The polishing article described above can be formed from a conductive material that can include a conductive abrasive material or can include a conductive component disposed in a dielectric or conductive abrasive material. In one embodiment, the conductive abrasive material may include conductive fibers, conductive fillers, or combinations thereof. Conductive fibers, conductive fillers, or combinations thereof may be dispersed in a polymeric material.

Conductive fibers may comprise conductive or dielectric materials, such as dielectric or conductive polymers or carbon-based materials, and may comprise at least partially conductive metals, carbon-based materials, conductive ceramic materials, conductive alloys, or combinations thereof. Coated or covered with material. The conductive fiber may be in the form of a fiber or filament, a fabric or cloth or one or more loops, coils, or conductive fiber rings. Multiple layers of conductive material, such as multiple layers of conductive fabric, can be used to form the conductive abrasive material.

Conductive fibers include dielectric or conductive fiber materials coated with a conductive material. Dielectric polymer material can be used as the fiber material. Examples of suitable dielectric fiber materials include polymeric materials such as polyamides, polyamides, nylon polymers, polyurethanes, polyesters, polypropylenes, polyethylenes, polystyrenes, polycarbonates, dienes comprising polymers, such as AES ( Polyacrylonitrile ethylene styrene), acrylic polymers, or combinations thereof. The present invention also contemplates the use of organic or inorganic materials that can be used as the fibers described above.

Conductive fiber material may be substantially comprises a conductive polymer material and the conductive polymer material comprises a polyacetylene, polyethylene dioxythiophene (PEDT), this is a trade name by TRON ^TM (Baytron ^TM), polyaryl Lin, polypyrrole ( commercially available under polypyrrole, polythiophene, carbon-based fibers, or combinations thereof. Another embodiment of a conductive polymer is a polymer-noble metal hybrid material. Polymer-noble metal hybrid materials are generally chemically inert around the electrolyte, such as oxidation resistant noble metals. An example of a polymer-noble metal hybrid material is a platinum-polymer hybrid material. Examples of conductive abrasive materials, including conductive fibers, are co-pending US patent application number filed on December 27, 2001, entitled “Conductive Polishing Article for Electrochemical Mechanical Polishing,” which is incorporated herein by reference in its entirety. No. 10 / 033,732 is disclosed in more detail. The present invention also contemplates the use of organic or inorganic materials that can be used as the fibers described above.

The fibrous material can naturally be hollow or hollow. The fiber length has a diameter of about 0.1 μm to about 1 mm and is in the range of about 1 μm to about 1000 mm. In one embodiment, the diameter of the fibers can be between about 5 μm and about 200 μm and about 5 or greater, for example about 10, for conductive fibers disposed in polymer composites and foams, such as polyurethane. Or an aspect ratio of diameter length greater than that. The cross-sectional area of the fiber may be round, oval, star-pattern, "snow flake", or any other type of dielectric or conductive fiber produced. High aspect ratio fibers having a length of about 5 mm to about 1000 mm and a diameter of about 5 μm to about 1000 μm can be used to form meshes, loops, and fabrics composed of conductive fibers. The fibers may also have an elastic modulus in the range between about 10 ⁴ psi and about 10 ⁸ psi. However, the present invention contemplates any modulus of elasticity necessary to provide elastic fibers that are compliant in the polishing articles and processes described above.

Conductive materials disposed on conductive or dielectric fibrous materials generally include conductive inorganic composites, such as metals, metal alloys, carbon-based materials, conductive ceramic materials, metal inorganic compounds, or combinations thereof. Examples of metals that may be used for coating conductive materials herein include precious metals, tin, lead, copper, nickel, cobalt, and combinations thereof. Precious metals include gold, platinum, palladium, iridium, rhenium, rhodium, ruthenium, osmium, and combinations thereof, with combinations of gold and platinum being preferred. The present invention also contemplates the use of other metals for coating conductive materials as well as those described above. Carbon-based materials include carbon black, graphite, and carbon particles that can adhere to the fiber surface. Examples of ceramic materials include niobium carbide (NbC), zirconium carbide (ZrC), tantalum carbide (TaC), titanium carbide (TiC), tungsten carbide (WC), and combinations thereof. The present invention also contemplates the use of other ceramic materials, other metals, other carbon-based materials, and other ceramic materials, as well as those described above, for coating conductive materials. Metallic inorganic compounds include, for example, danjenite (Cu ₉ S ₅ ) or copper sulfate, for example acrylic or nylon fibers, disposed on polymer fibers. Monochrome coated fibers are commercially available under the trade name Thunderron ^R of Nihon Sanmo Dyeing Co., Ltd. of Japan. Thunderron ^R fibers generally have been observed to have a monogenite (Cu ₉ S ₅ ) coating of about 0.03 μm to about 0.1 μm and a conductivity of about 40 Ω / cm. The conductive coating can be placed directly on the fiber by plating, coating, physical vapor deposition, chemical vapor deposition, binding, or bonding of the conductive material. In addition, nucleation or seed, conductive material layers, such as copper, cobalt or nickel, can be used to improve adhesion between the conductive material and the fiber material. Conductive materials may be disposed on individual dielectric or conductive fibers in fabrics made from dielectric or conductive fibrous materials, shaped loops, foams, various lengths.

An example of a suitable conductive material is polyethylene fiber coated with gold. Additional examples of conductive fibers include acrylic fibers plated with gold and nylon fibers coated with rhodium. An example of a conductive material using a nucleation material is a nylon layer coated with a copper seed layer and a gold layer disposed on the copper layer.

The conductive fibers may include carbonaceous materials or conductive particles and fibers. Examples of conductive carbon-based materials may include carbon powders, carbon fibers, carbon nanotubes, carbon nanoforms, carbon aerogels, graphite, and combinations thereof. Examples of conductive particles or fibers are essentially conductive polymers, dielectric or conductive particles coated with a conductive material, dielectric filler materials coated with a conductive material, gold, platinum, tin, lead and other metal or metal alloy particles, conductive ceramic particles , And conductive inorganic particles such as combinations thereof. Conductive fillers may be coated in part or in whole with metals, precious metals, carbon-based materials, conductive ceramic materials, metal inorganic compounds, or combinations thereof as described above. Examples of filler materials are carbon fibers or carbon fibers or graphite coated with copper or nickel. The conductive filler may be spherical, elliptical, longitudinal, having a specific aspect ratio of greater than two, or any other form of filler produced. Filler materials are broadly defined herein as materials that can be disposed on a second material to alter physical, chemical, or electrical properties. As such, the filler material may also include a dielectric or conductive fibrous material, partially or wholly in the conductive metal or conductive polymer described above. The dielectric or conductive fibrous material partially or wholly coated on the conductive metal or conductive polymer may also be a finished fiber or fiber piece.

Conductive materials are used to coat dielectric and conductive fibers and fillers to provide a desired level of conductivity for forming conductive abrasive materials. Generally, a coating of conductive material is deposited on the fiber and / or filler material to a thickness of about 0.01 μm to about 50 μm, for example about 0.02 μm to about 10 μm. Coatings will generally have a fiber or filler less than about 100 Ω-cm, for example from about 0.001 Ω-cm to about 32 Ω-cm. The present invention contemplates that the resistivity depends on the fiber or filler and the coating material used and exhibits a resistivity of a conductive material coating, for example platinum having a resistivity of 9.81 μΩ-cm at 0 ° C. Examples of suitable conductive fibers include about 0.1 μm copper, nickel, or cobalt, and nylon fibers plated with about 2 μm gold disposed on a copper, nickel, or cobalt layer, overall fiber diameters from about 30 μm to 90 μm overall. do.

The conductive abrasive material may comprise a combination of conductive or dielectric fibrous materials that are at least partially filled or covered with additional conductive material and conductive fillers to achieve the desired electrical conductivity or other polishing article properties. An example of a combination is the use of gold coated nylon fibers and graphite as the conductive material comprising at least a portion of the conductive abrasive material.

The conductive fibrous material, the dielectric fibrous material, or a combination thereof may be dispersed into the binder material or form a conductive abrasive material composition. One formed binder material is a conventional abrasive material. Conventional abrasive materials are generally dielectric materials, such as dielectric polymer materials. Examples of dielectric polymer abrasive materials include polyurethanes, polycarbonates, polyphenylene sulfides (PPS), Tefion ^™ polymers, polystyrene, ethylene-propylene-diene-methylene (EPDM), or mixtures thereof with polyurethane and fillers. Combinations, or other abrasive materials used for the abrasive substrate surface. Conventional abrasive materials may also include urethane penetrating felt fibers and may be in a foamed state. The present invention contemplates that any conventional abrasive material can be used as the binder material (also known as matrix) having the aforementioned conductive fibers and fillers.

In polymeric materials, additives may be added to the binder material to assist in the dispersion of conductive fibers, conductive fillers or combinations thereof. Additives can be used to improve the mechanical, thermal, and electrical properties of polishing materials formed from fibers and / or fillers and binder materials. The additives include a dispersant for dispersing more uniform conductive fibers or conductive fillers in the binder material and a cross binder for polymer cross bite. Examples of crosslinking agents include amino compounds, silane crosslinkers, polyisocyanate compounds, and combinations thereof. Examples of dispersants include N-substituted long-chain alkenyl succinimides, methacrylic or acrylic acid derivatives comprising polar atom groups such as amine salts of high molecular weight organic acids, amines, amides, imines, imides, hydroxyls, ethers Co-polymers. Ethylene-propylene copolymers include polar atom groups such as amines, amides, imines, imides, hydroxyls, ethers. In addition, sulfur containing mixtures, such as dioglycolic acid and associated esters, have been observed as effective dispersants for gold coated fibers and fillers in binder materials. The present invention varies in amount and type of additives as well as the fiber or filler material as well as the binder material used, and the examples described above are exemplary and are not to be construed as limiting the scope of the invention.

In addition, a mesh of conductive fibers and / or filler material may be formed in the binder material by providing a sufficient amount of conductive fibers and / or conductive filler material to form a physical or electrical continuity medium or phase in the binder material. . The conductive fibers and / or conductive fillers generally comprise from about 2 wt% to about 85 wt%, such as from about 5 wt% to about 60 wt% of the polishing material when combined with the polymeric binder material.

The conductive material, and optionally, a fabric or fabric interwoven with the conductive filler coated fiber material may be placed in a binder. Fiber materials coated with a conductive material can be interwoven to form yarns. Yarn together can be a conductive mesh with the aid of an adhesive or a coating. Yarn may be disposed as a conductive element in the polishing pad material or woven into a cloth or fabric.

Alternatively, the conductive fibers and / or fillers can be combined with an adhesion aid to form a composite conductive polishing material. Examples of suitable adhesion aids include epoxies, silicones, urethanes, polyamides, polyamides, fluoropolymers, fluoride derivatives thereof, or combinations thereof. Additional conductive materials, such as conductive polymers, additional conductive fillers, or combinations thereof may be used with adhesion aids to achieve the desired electrical conductivity or other polishing article properties. The conductive fibers and / or fillers may comprise from about 2 wt% to about 85 wt%, such as from about 5 wt% to about 60 wt% of the composite conductive polishing material.

The conductive fibers and / or filler materials may be used to form conductive polishing materials or articles having a volume or surface resistivity of about 50 Ω-cm or less, such as resistivity of about 3 Ω-cm or less. In one aspect of the polishing article, the surface of the polishing article or polishing article has a resistivity of about 1 Ω-cm or less. In general, a composite of a conductive polishing material or a conductive polishing material and a conventional polishing material can be provided to produce a conductive polishing article having a volume resistivity or volume surface resistivity of about 50 Ω-cm or less. One example of a composite of a conductive polishing material and a conventional polishing material is 1 Ω-cm or disposed in a conventional polishing material of polyurethane in an amount sufficient to provide a polishing article having a volume resistivity of about 10 Ω-cm or less. Gold or carbon coated fibers exhibiting less resistivity.

Conductive polishing materials formed from the conductive fibers and / or fillers described herein have mechanical properties that do not degrade under generally maintained electric fields and are resistant to degradation in acid or base electrolytes. The conductive material and any binder material used, if applicable, are combined to have the equivalent mechanical properties of conventional polishing materials used in conventional polishing articles. For example, a conductive polishing material in combination with a conductive polishing material or binder material may be a polymeric material as described by the American Society for Testing and Materials (ASTM) based in Philadelphia, PA. Have a hardness of about 100 or less on the Shore D hardness scale. In one aspect, the conductive material has a hardness of about 80 or less at Shore D hardness for the polymeric material. Conductive polishing portion 310 generally includes a surface roughness of about 500 microns or less. The nature of the polishing pad is generally designed to reduce or minimize scratching of the substrate surface when applying a bias to the substrate surface and during mechanical polishing.

polishing  Article structure

In one aspect, the polishing article consists of a single layer of conductive polishing material disposed on the support and described herein. In another aspect, the polishing article can include a plurality of material layers that include one or more conductive materials on the substrate surface or provide conductive material to contact the article with one or more article support portions or sub pads.

3 is a partial cross-sectional view of one embodiment of a polishing article 205. The polishing article 205 shown in FIG. 3 includes a synthetic polishing article having a conductive polishing portion 310 for polishing a substrate surface and article support, or sub pad, portion 320.

Conductive polishing portion 310 may include a conductive polishing material that includes conductive fibers and / or conductive fillers as described herein. For example, conductive polishing portion 310 may include a conductive material that includes conductive fibers and / or conductive fillers disposed in the polymeric material. The conductive filler can be disposed in the polymeric binder. The conductive filler may comprise a soft conductive material disposed on the polymeric binder. Soft conductive materials generally have the same or less hardness and modulus relative to the hardness and modulus of copper. Examples of soft conductive materials include gold, tin, palladium, palladium-tin alloys, platinum, and lead, alloy and ceramic composites, among other conductive metals softer than copper. The present invention contemplates the use of other conductive fillers that are harder than copper when the size is small enough to not scratch the polishing substrate. In addition, the conductive polishing portion may comprise a rope, coil or ring of one or more conductive fibers, or conductive fibers interwoven to form a conductive fabric or cloth. Conductive polishing portion 310 may also include multiple layers of conductive material, such as multiple layers of conductive fabrics or fabrics.

One example of conductive polishing portion 310 includes gold coated nylon fibers and graphite particles disposed on polyurethane. Another example includes graphite particles and / or carbon fibers disposed on polyurethane or silicone. Another example includes gold or tin particles dispersed in a polyurethane matrix.

In yet another embodiment, conductive polishing portion 310 may have abrasive particles 360 disposed therein. At least some of the abrasive particles 360 are exposed on the upper polishing surface 370 of the conductive polishing portion 310. Abrasive particles 360 can be formed to remove the passivation layer of the metal surface of the substrate that is generally polished, exposing the underlying metal to electrolyte and electrochemical action, thereby enhancing the rate of polishing during processing. Examples of abrasive particles 360 include ceramic, inorganic, organic, or polymer particles that are strong enough to break the passivation layer formed on the metal surface. The polymer particles may be solid or sponge to adjust the wear rate of the polishing portion 310.

Article support portion 320 generally has a diameter or width that is less than or equal to the diameter or width of conductive polishing portion 310. However, the present invention contemplates article support portion 320 having a larger width or diameter than conductive polishing portion 310. While the drawings herein show a circular conductive polishing portion 310 and an article support portion 320, the present invention is different from the conductive polishing portion 310, the article support portion 320, or both, such as rectangular or elliptical surfaces. It is contemplated to have a surface. It is further contemplated that the present invention may form a linear web or belt of material with conductive polishing portion 310, article support portion 320, or both.

Article support portion 320 may comprise an inert material in a polishing process and is resistant to wear or damage during ECMP. The polymeric material, for example, the article support portion may be, for example, polyurethane, polycarbonate, polyphenylene sulfide (PPS), ethylene-propylene-dieneene-methylene (EPDM), Teflon (mixed with polyurethane and filler) Conventional polishing materials, including polymers, or combinations thereof, and other polishing materials used for polishing substrate surfaces. Article support portion 320 may be a conventional soft material, such as compressed felt fibers saturated with urethane, to absorb some pressure applied between carrier head 130 and polishing article 205 during processing. The soft material may have a Shore A hardness of about 20 to about 90.

Alternatively, article support portion 320 is made of a conductive material that is compatible with the surrounding electrolyte that does not critically affect polishing, including conductive precious metals or conductive polymers, to provide electrical conducting across the polishing article. Examples of precious metals include gold, platinum, palladium, iridium, rhenium, rhodium, rhenium, rudenium, osmium, and combinations thereof, with double gold and platinum being preferred. Materials that react with the surrounding electrolyte, such as copper, can be used when such materials are insulated from the surrounding materials by inert materials, such as conventional polishing materials or precious metals.

When article support portion 320 is conductive, article support portion 320 may have greater conductivity, ie, lower resistivity, than conductive polishing portion 310. For example, the conductive polishing portion 310 may have a resistivity of about 1.0 Ω-cm or less compared to the article support portion 320 comprising platinum, which has a resistivity of 9.81 μΩ-cm at 0 ° C. Conductive article support portion 320 may be provided with a uniform bias or current during polishing for uniform oxidative separation across the substrate surface to minimize conductive resistance along the surface of the article, eg, the radius of the article. Conductive article support portion 320 may be connected to a power source to transfer power to conductive polishing portion 310.

Generally, conductive polishing portion 310 is attached to article support portion 320 by a conventional adhesive suitable for use of the polishing material in the polishing process. The present invention contemplates using other means for attaching conductive polishing portion 310 to article support portion 320, such as compression molding and lamination. The adhesive may be conductive or dielectric depending on the manufacturer's wishes or the needs of the process. Article support portion 320 may be attached to a support such as disk 206 by adhesive or mechanical clamp. Alternatively, where only the polishing article 205 includes the conductive polishing portion 310, the conductive polishing portion may be attached to a support such as the disk 206 by adhesive or mechanical clamp.

Conductive polishing portion 310 and article support portion 320 of polishing article 205 are generally permeable to the electrolyte. Multiple perforations may be formed in the conductive polishing portion 310 and the article support portion 320, respectively, to facilitate fluid flow therethrough. Many perforations allow electrolyte to flow through and contact the surface during processing. The perforations can be formed originally during manufacturing or can be formed and patterned through the material by mechanical means, such as between the weaves in the conductive fabric or fabric. Perforations may be partially formed through each layer of polishing article 205. The perforations of the conductive polishing portion 310 and the perforations of the article support portion 320 may be aligned to facilitate fluid penetrating flow.

Examples of perforations 350 formed in polishing article 205 may include apertures in a polishing article having a diameter between about 0.02 inches (0.5 millimeters) and about 0.4 inches (10 millimeters). The thickness of the polishing article 205 may be between about 0.1 mm and about 5 mm. For example, the perforations may be spaced 0.1 inch to 1 inch from each other.

The polishing article 205 may have a perforation density of about 20% to about 80% of the polishing article, providing a sufficient mass flow of electrolyte across the polishing article surface. However, the present invention may contemplate aperture densities above or below the aperture densities described herein that may be used to control fluid flow therethrough. In one example, a puncture density of about 50% was observed to provide sufficient electrolyte flow to facilitate uniform oxidative separation from the substrate surface. Perforation density is described broadly herein as the volume of polishing article that perforations comprise. Perforation density includes the number of aggregates and the size or diameter of the perforations of the surface or body of the polishing article when the perforations are formed in the polishing article 205.

Perforation size and density are selected to provide a uniform distribution of electrolyte through the polishing article 205 to the substrate surface. In general, a combination of perforation size, perforation density, and perforation size and perforation size of conductive polishing portion 310 and article support portion 320 are formed and aligned with each other to form conductive polishing portion 310 and article support portion. Provides sufficient mass flow of electrolyte through the 320 to the substrate surface.

Grooves may be disposed in the polishing article 205 to promote electrolyte flow across the polishing article 205 to provide an effective and uniform electrolyte flow with the substrate surface for an oxidative separation or electroplating process. The grooves may be formed partially in a single layer or through multiple layers. The present invention contemplates grooves formed on the polishing surface or top layer in contact with the substrate surface. Some or more perforations may be interconnected with the grooves to provide increased or controlled electrolyte flow to the surface of the polishing article. Alternatively, all perforations may be interconnected or not connected at all with grooves disposed in the polishing article 205.

Examples of grooves used to facilitate electrolyte flow can be linear grooves, arc grooves, cyclic concentric grooves, radial grooves, helical grooves, and the like. Grooves formed in article 205 may have a cross section that may be rectangular, circular, semicircular, or any other shape that may facilitate fluid flow across the surface of the polishing article. The grooves may cross each other. The grooves are formed in a pattern such as an X-Y pattern that intersects and is disposed on the polishing surface, a triangular pattern that is formed and intersects on the polishing surface to improve electrolyte flow on the surface of the substrate.

The grooves may be spaced apart from each other by about 30 mils to 300 mils. In general, the grooves formed in the polishing article may have a width of about 5 mils to about 30 mils, but may vary to the size required for polishing. One example of a groove pattern includes grooves about 10 mils wide and 60 mils spaced from each other. Any suitable groove shape, size, diameter, cross sectional shape, or spacing can be used to provide the desired flow of electrolyte. Additional cross-sectional and groove shapes are co-pending and are incorporated herein by reference in their entirety and are entitled "Method and Apparatus For Polishing Substrates" and filed on October 11, 2001, filed US Provisional Application No. 60 /. 328,434 is described in more detail.

Electrolyte transport to the surface of the substrate can be enhanced by crossing some of the perforations and grooves so that electrolyte is evenly distributed around the substrate surface by the grooves, through which the electrolyte flows through one set of perforations and is used to process the substrate, The processing electrolyte is then freshly filled by the additional electrolyte flowing through the perforations. Examples of pad perforations and groove formation are fully described in US Patent Application No. 10 / 026,854, filed Dec. 20, 2001, which is incorporated herein by reference in its entirety.

In the following, examples of polishing articles having perforations and grooves are given. 4 is a plan view of one embodiment of a grooved polishing article. The round pad 440 of the polishing article 205 has a number of holes 446, which can be seen to have sufficient size and structure to allow electrolyte to flow to the substrate surface. The holes 446 are about 0.1 inches to about 1 inch apart from each other. These holes may be circular holes having a diameter of approximately 0.02 inches (0.5 mm) to approximately 0.4 inches (10 mm). The number and shape of these holes may also vary depending on the device used, the process parameters, and the combination of ECMP.

Grooves 442 are formed in the polishing surface 448 of the polishing article 205 to allow fresh electrolyte from the bulk solution to move from the container 202 into the gap between the substrate and the polishing article. These grooves 442 may have various patterns, for example, a pattern of generally concentric grooves formed on the polishing surface 448 as shown in FIG. 4, an XY pattern as shown in FIG. 5, and a triangle as shown in FIG. 6. Patterns and the like are possible.

5 is a plan view of another embodiment of a polishing pad having grooves 542 arranged in an X-Y pattern in the polishing region 548 of the polishing pad 540. The holes 546 may be arranged at the intersection of the vertically arranged grooves and the horizontally arranged grooves, or may be arranged in the vertical groove, the horizontal groove or outside of the grooves 542 within the polishing article 548. have. The holes 546 and the grooves 542 may be arranged in the inner diameter 544 of the polishing article and the holes and the grooves may not be arranged in the outer diameter 550 of the polishing pad 540.

6 is another embodiment of a patterned polishing article 640. In this embodiment, the grooves may be arranged in the X-Y pattern to have grooves 645 arranged diagonally across the X-Y patterned grooves 642. Diagonal grooves 645 may be arranged to be inclined with any X-Y groove 642, for example, at an angle between about 30 ° to about 60 ° with any X-Y groove 642. The holes 646 are arranged at the intersection of the XY grooves 642 or at the intersection of the XY grooves 642 and the diagonal grooves 645, along the XY grooves 642 or the diagonal grooves 645, or the polishing article ( It can be arranged outside of these grooves 642 and 645 within 648. The holes 646 and the grooves 642 may be arranged in the inner diameter 644 of the polishing article and the holes and the grooves may not be arranged in the outer diameter 650 of the polishing pad 640.

For other types of groove patterns, such as spiral grooves, serpentine grooves, or turbine grooves, etc., referred to in this application as "substrate polishing method and apparatus", October 11, 2001 More fully described in US Patent Provisional Application No. 60 / 328,434, filed and pending.

In addition to the holes and grooves in the polishing article 205, the conductive polishing region 310 can be embossed to include the surface texture. Such embossing can improve the migration of electrolytes, removed substrate material, by-products, and particulates. In addition, the embossing process can reduce scratching of the polishing surface and change the friction force between the polishing substrate and the polishing article 205. The weave of the embossed substrate is evenly distributed throughout the conductive polishing region 310. Embossed substrate weaves can include, among other geometries, pyramids, islands, crosses, rounds, rectangles, squares, and the like. The present invention also contemplates embossing on the conductive polishing region 310 with other types of weave structures. The embossed surface may occupy 5 to 95 percent surface area of the conductive polishing region 310, for example 15 to 90 percent surface area of the conductive polishing region 310.

conductivity polishing  if

7A is a top cross-sectional view of one embodiment of a conductive cloth or fabric 700 that may be used to form the conductive polishing region 310 of the polishing article 205. This conductive cloth or fabric consists of interwoven fibers 710 coated with a conductive material as described.

In one embodiment, the interwoven fibers 710 of the weave or basket-weave pattern in the vertical 720 and horizontal 730 directions (as viewed in the plane of FIG. 7A) are shown in FIG. 7A. Has been shown. The present invention also predicts yarns forming different types of fabrics, such as conductive fabrics or fabrics 700, or different interburns, webs, or mesh patterns. In one aspect, the fibers 710 are interwoven to provide a passageway 740 within the fabric 700. This passage 740 allows electrolyte or fluid, including ions and electrolyte components, to flow through the fabric 700. Conductive fabric 700 may be arranged in a polymeric binder such as polyurethane. Conductive fillers may be arranged in such polymeric binders.

7B is a partial cross-sectional view of a conductive cloth or fabric arranged on the article support 320 of the polishing article 205. This conductive cloth or fabric 700 may be arranged in one or more successive layers over article support 320 including any holes 350 formed in article support 320. The cloth or fabric 700 may be secured to the article support 320 by an adhesive. When the fabric 700 is immersed in the electrolyte, the electrolyte may flow through a fiber, a weave, or a passage formed in the cloth or fabric 700. Optionally, an intermediate layer can be included between the cloth or fabric 700 and the article support 320. The intermediate layer may be permeable or include perforations aligned with the perforation 350 for flow of electrolyte through the article 205.

In contrast, the fabric 700 increases electrolyte flow through the fabric if the passage 740 determines that the effective flow of electrolyte through the fabric 700 is not sufficient, i.e., metal ions do not diffuse through the fabric. Can be perforated. The fabric 700 is typically constructed or perforated to have an electrolyte flow rate of up to about 20 gallons per minute.

7C is a partial cross section of a fabric or fabric that may have a pattern of perforations 750 to match the pattern of perforations 350 in article support 320. Alternatively, some or all of the perforations 350 of the conductive cloth or fabric 700 may not be aligned with the perforations 350 of the article support 320. Aligned or unaligned perforations allow the operator or manufacturer to control the flow rate or volume of electrolyte through the polishing article in contact with the substrate surface.

An example of a fabric 700 is a basket weave interwoven with each other having a width of about 8 to about 10 fibers of the fiber, including nylon fibers coated with gold. Examples of the fibers are nylon fibers, about 0.1 μm cobalt, copper, or nickel material arranged on the nylon fiber, and about 2 μm gold arranged on the cobalt, copper, or nickel material.

Alternatively, conductive mesh may be used in place of the conductive cloth or fabric 700. The conductive mesh can be at least a portion of conductive cloth 700 in which conductive fibers, conductive fillers, or conductive binders are arranged or coated with a conductive binder. The conductive binder includes a non-metal conductive polymer or a composite of a conductive material in which the polymer compound is arranged. A mixture of conductive fillers such as graphite powder, graphite flakes, graphite fibers, carbon fibers, carbon powder, carbon black, fibers or metal particles coated with a conductive material, and polymer materials such as polyurethane can be used to form the conductive binder. . As described above, the fibers coated with the conductive material can be used as the conductive filler for use in the conductive binder. For example, carbon fibers or gold-coated nylon fibers may be used to form the conductive binder.

Where necessary to aid in the dispersion of the conductive fillers and / or fibers, when necessary to improve the adhesion between the polymer and the fillers and / or fibers, when necessary to improve the adhesion between the conductive foil and the conductive binder, and when If necessary to improve the mechanical, thermal and electrical properties, the conductive binder may also include additives. Examples of additives for improving adhesion are epoxy, silicone, urethane, polyimide, or combinations thereof for improving adhesion.

The composition of the conductive fillers and / or fibers and polymeric materials can be adjusted to provide specific properties such as conductivity, wear properties, and durability factors. For example, a conductive binder comprising from about 2% to about 85% by weight conductive filler may be used with the articles and processes described herein. Examples of materials that can be used as conductive fillers and conductive binders are described in more detail in US Patent Application No. 10 / 033,732, filed December 27, 2001.

The thickness of the conductive binder can be from about 1 micron to 10 millimeters, such as from about 10 microns to about 1 millimeter. Multiple layers of conductive binder will be applied to the conductive mesh. The conductive mesh will be used in the same manner as the conductive fiber or fabric 700 as shown in FIGS. 7B and 7C. The conductive binder can be applied in multiple layers across the conductive mesh. In one aspect, a conductive binder is applied to the conductive mesh after the mesh is perforated to protect portions of the mesh exposed by the perforation process.

Additionally, to improve the adhesion of the conductive binder to the conductive mesh, a conductive primer may be placed on the conductive mesh prior to application of the conductive binder. Conductive primers can be made of materials similar to conductive binder fibers with improved composition to provide greater intermaterial bonding properties than conductive binders. Suitable conductive primer materials will have resistivities of about 100 Ω-cm or less, such as 0.001 Ω-cm to about 32 Ω-cm.

Alternatively, the conductive foil may be used in place of the conductive cloth or fabric 700, as shown in FIG. 7D. The conductive foil generally includes a metal foil 780 disposed on the conductive binder 790 or coated with the conductive binder 790 on the support layer 320. Examples of material forming metal layers include metal coated fabrics, conductive metals such as copper, nickel, and cobalt, and precious metals such as gold, platinum, palladium, iridium, rhenium, ruthenium, osmium, tin, lead and combinations thereof do. Conductive foils also include non-metallic conductive foil sheets such as copper sheets, short fiber woven sheet foils. The conductive foil may also include a metal coated cloth of dielectric or conductive material such as copper, nickel, tin or a gold coated cloth of nylon fibers. The conductive foil may also comprise a fabric of conductive or dielectric material coated with a conductive binder material as described above. The conductive foil may also comprise a wire frame, screen or mesh of conductive metal wire or strip, such as copper wire, which may be coated with a conductive binder material as described above. The present invention contemplates the use of other materials to form the metal foils described above.

The conductive binder 790 as described above can encapsulate the metal foil 780, allowing the metal foil 780 to be the conductive metal to be observed to react with the surrounding electrolyte, such as copper. The conductive foil may be perforated with a plurality of perforation members 750 described above. Although not shown, the conductive foil can be coupled to the conductive wire to power to bias the polishing surface.

Conductive wire 790 may be as described for conductive mesh or fabric 700 and may be applied to multiple layers on metal foil 780. In one aspect, the conductive binder 790 may be applied to the metal foil 780 after the metal foil 780 is perforated to protect the portion of the metal foil 780 that is exposed from the perforation process.

The conductive binder described herein may be disposed in the conductive fabric 700, the foil 780, or the mesh by casting a liquid adhesive or binder into the fabric 700, the foil 78, or the mesh. The binder is then solidified on fabric, foil or mesh after drying and curing. Other suitable processing methods, including injection molding, compression molding, lamination, autoclave, extrusion, or a combination thereof, may be used to encapsulate the conductive fabric, mesh, or foil. Both thermoplastic and thermosetting binders can be used for this application.

The adhesion between the metal foil element of the conductive foil and the conductive binder is such that a plurality of perforations having a width or diameter of about 0.1 μm to about 1 mm are punched in the metal foil or a conductive free between the metal foil and the conductive binder. By applying the mer, it can be strengthened. The conductive primer may be the same material as the conductive primer for meshes disclosed herein.

7E is a cross-sectional view of another embodiment of a conductive cloth or fabric 798 that may be used to form the underlayer 792 of the conductive polishing portion 310 of the polishing article 205. The conductive cloth or fabric may be made of interwoven or alternatively non-woven fibers 710. The fiber 710 may be made or coated with a conductive material as described above. Examples of nonwoven fibers include spun-bond or melt blown polymers among other nonwoven fibers.

The conductive polishing portion 310 includes an upper layer 794 made of a conductive material. The upper layer 794 includes a polishing surface 796 disposed opposite the lower layer 792. The upper layer 794 may have a thickness sufficient to smooth out unevenness of the underlying lower layer 792, thus providing a generally flat and planar polishing surface 796 for contacting the substrate during processing. In one embodiment, the polishing surface 796 has a thickness variation of about ± 1 mm or less and a surface roughness of about 500 μm or less.

The upper layer 794 may be composed of any conductive material. In one embodiment, the top layer 794 is made of a soft material such as gold, tin, palladium, palladium-tin alloys, platinum or lead in ceramic compositions that are softer than other conductive metals, alloys and copper. The top layer 794 may optionally include an abrasive material disposed therein as described above to assist in removing the passivation layer disposed on the metal surface of the substrate to be polished.

Optionally, the upper layer 794 leaves the conductive polishing portion 310 leaving at least a portion of the exposed conductive polishing portion so that the conductive polishing portion 310 can be electrically connected to the substrate polished in the upper layer 794. It may be composed of a non-conductive material substantially covering. In this configuration, the top layer 794 reduces scratching and prevents the conductive portion 310 from entering into any exposed feature during polishing. The non-conductive top layer 794 may include a plurality of perforations that allow the conductive polishing portion 310 to remain exposed.

7F is another embodiment of a polishing article 205 having a window 702 formed in the present invention. Window 702 is configured to allow a sensor 704 located below polishing article 205 to sense a metric indicative of the polishing performance. For example, sensor 704 may be an eddy current sensor or an interferometer, other sensor. In one embodiment, an interferometer sensor capable of generating collimation light is directed and impacted on the side of the substrate 114 being polished during the processing process. Interference between the reflected signals is an indication of the thickness of the material layer being polished. One sensor that can be advantageously used is disclosed in US Pat. No. 5,893,796, incorporated herein by reference, filed April 13, 1999, and patented to Birang et al.

Window 702 includes a fluid barrier 706 that substantially prevents processing fluid from reaching the area of disk 206 that houses sensor 704. The fluid barrier 706 is typically chosen to be capable of passing through (eg, minimal or invalid or interfering with) the signal passing through it. The fluid barrier 706 may be a separate component, such as a block of polyurethane connected to the polishing article 205 in the window 702, or the polishing article 205, eg, the conductive portion 310. Or one or more layers comprising a mylar sheet, or sub-pad, portion 320 underneath the article support. Optionally, the fluid barrier 706 may be disposed in a layer disposed between the polishing article 205 and the disk 206, such as the electrode 204 or other layer. In yet another optional configuration, the fluid barrier 706 may be disposed in a passage 708 that is aligned with the window 702 in which the sensor 704 is located. In embodiments in which the conductive portion 310 includes multiple layers, for example, an upper layer 794 and a lower layer 792, the transmissive material 706 may be formed from the conductive portion 310, as shown in FIG. It may be disposed in one or more layers comprising. It is contemplated that other configurations of conductive polishing articles may include the embodiments described herein along with other configurations, and may be applied to include a window.

polishing  Surface conductive elements

In another embodiment of the present invention, the conductive fibers and fillers described herein may be used to form separate conductive elements disposed in the abrasive to form the conductive polishing article 205 of the present invention. The abrasive may be, for example, a conductive abrasive or a conventional abrasive, such as a conductive filler or a fibrous conductive composite disposed in a polymer as described herein. The surface of the conductive element forms a plane with the surface of the polishing article or extends over the surface plane of the polishing article. The conductive element extends about 5 mm above the surface of the polishing article.

The following describes the use of conductive elements having a particular structure and composition in abrasives, but the present invention contemplates that materials made from them, such as individual conductive fibers, fillers, and fabrics, can also be used as conductive elements. . Furthermore, although not shown, the following description of the polishing article is described herein, with the polishing article having the perforation and groove patterns described herein and shown in FIGS. It comprises a configuration for the pattern, for operating with the conductive element described in.

8A and 8B schematically show plan and cross-sectional views of one embodiment of a polishing article 800 having a conductive element disposed therein. Polishing article 800 generally includes a body 810 having a polishing surface 820 adapted to contact a substrate during processing. Body 810 typically includes a dielectric or polymeric material that is a dielectric polymer material such as, for example, polyurethane.

Polishing surface 820 has one or more holes, grooves, trenches, or depressions 830 formed therein to receive at least partially conductive element 840. Conductive element 840 is typically disposed to have a contact surface 850 lying on or extending over the same plane as the surface formed by polishing surface 820. The contact surface 850 is typically formed in such a way as to maximize the electrical contact of the conductive element 840 when in contact with the substrate by having a surface that is soft, elastic, flexible, or adaptable to pressure. During the polishing process, contact pressure is applied so that the contact surface 850 lies on the same plane as the polishing surface 820.

In general, the body 810 will have electrolyte permeability by a number of perforations 860 formed therein, as described herein. The polishing article 800 has a puncture density of about 20% to 80% of the surface area of the polishing article 810 to provide sufficient electrolyte flow to promote uniform oxidative dissolution from the substrate surface.

Body 810 generally includes a dielectric material, such as conventional abrasives described herein. The recessed portion 830 formed in the body 810 is generally configured to hold the conductive element 840 during processing, and therefore may change shape or orientation. In the embodiment shown in FIG. 8A, recesses 830 are grooves having a rectangular cross section disposed across the abrasive member to form interconnect “X” or cross pattern 870 at the center of polishing article 800. to be. In the present invention, it is also conceivable to have additional cross sections, such as inverted trapezoidal or rounded forms (wherein the grooves are brought into contact with the substrate surface as described herein).

As another example, the recessed portion 830 (and the conductive element 840 disposed therein) may be disposed at irregular intervals, or may face in a radial, parallel, or vertical direction, or additionally straight, curved, concentric. It may have a shape, swirl shape, or other cross-sectional area.

FIG. 8C shows a schematic plan view of a series of individual conductive elements 840 disposed radially on the body 810, where each conductive element 840 is physically or electrically driven by the gap member 875. It is separated. The gap member 875 is part of the dielectric abrasive or dielectric interconnect for the conductive element, such as a plastic interconnect. As another example, the gap member 875 may be part of a polishing article without the abrasive or the conductive element 840 so that the conductive elements 840 are not physically connected. In this independent member configuration, each conductive element 840 may be individually connected to a power source by a conductive passage 890 such as a wire.

Referring again to FIGS. 8A and 8B, there is provided a conductive element 840 disposed in the body 810 to generate bulk surface resistance or bulk resistance, typically about 20 Ω-cm. In one embodiment of the polishing article, the abrasive member has a resistance of about 2 Ω-cm. In general, conductive element 840 has mechanical properties that do not weaken under a series of electric fields and are resistant to weakening in acids or basic electrolytes. Conductive element 840 is held in recess 830 by press fit, clamping, adhesive, or some other method.

In one embodiment, conductive element 840 is sufficiently soft, elastic or flexible to maintain electrical contact between contact surface 850 and substrate during processing. A sufficiently soft, elastic or flexible material as the conductive element 840 has a similar hardness of about 100 on the Shore D durometer as compared to the abrasive. As the polymeric material, a conductive element 840 having a similar hardness of about 80 on the Shore D durometer is used. Soft materials, such as flexible or bendable fibrous materials, may also be used as the conductive element 840. Conductive element 840 is softer than abrasive to avoid the high local pressure caused by conductive element 840 during the polishing process.

In the embodiment shown in FIGS. 8A and 8B, the conductive element 840 is inserted into a polishing surface 810 disposed on a component support or sub-pad 815. Perforation 860 is formed through both polishing surface 810 and component support 815 around conductive element 840.

Conductive element 840 as an example is dielectric or conductive coated with a conductive filler or a conductive material mixed with a polymeric material, such as a polymeric adhesive, to form a conductive (and abrasion resistant) composite as described herein. Fiber. Conductive element 840 also includes a conductive polymeric material or other conductive material as described herein to improve electrical properties. For example, the conductive element may be a composite of conductive fibers and conductive epoxy including nylon fibers coated with gold, such as nylon fibers coated with 0.1 μm cobalt, copper or nickel and 0.2 μm gold and It includes carbon or graphite filler deposited on the polyurethane body to improve the conductivity of the composite.

8D is a schematic cross-sectional view of another embodiment of a polishing article 800 with a conductive element disposed therein. Conductive element 840 is generally disposed to have a contact surface that lies on or extends above the plane formed by polishing surface 820. Conductive element 840 includes conductive fiber 700 that is disposed, coated, or enclosed around conductive portion 845, as described herein. As another example, each conductive fiber and filler may be disposed, coated, or enclosed around the conductive portion 845. Conductive portion 845 includes a metal, such as a noble metal described herein, or a conductive material, such as copper, which material is suitable for use in electropolishing processes. Conductive element 840 may also comprise a composite of fibers and a binder as described, wherein the fiber forms an external contact of conductive element 840 and the binder typically forms an internal support structure. Conductive element 840 may also include a hollow tube having a rectangular cross-sectional area, wherein the walls of the tube are formed by rigid conductive fibers 700 and bonding materials as described.

Connector 890 is used to connect conductive element 840 to a power source (not shown) to electrically bias conductive element 840 during processing. In general, connector 890 is a wire, tape, or other conductor that may be used with, or having a coating or covering to protect connector 890 from the processing fluid. Connector 890 may be molded, soldered, stacked, brazed, clamped, crimped, riveted, fastened, conductive adhesive, or some other method. It is connected to the conductive element 840 by the device. Examples of materials that can be used as the material of the connector 890 include insulated copper, graphite, titanium, platinum, gold, aluminum, stainless steel, and HASTELOY® conductive materials.

The coating disposed around the connector 890 includes polymers such as fluorocarbon, polyvinyl chloride (PVC), and polyimide. In the embodiment shown in FIG. 8A, a connector 890 is connected to each conductive element 840 around the polishing article 800. In other embodiments, the connector 890 may be disposed through the body 810 of the polishing article 800. In yet another embodiment, the connector 890 is connected through a body 810 connected to a conductive grid (not shown) disposed in the pocket and / or electrically connected to the conductive element 840. Can be connected.

9A illustrates another embodiment of abrasive 900. The abrasive 900 includes a body 902 having one or more at least partially conductive members disposed on the polishing surface 906. Conductive element 904 generally includes a plurality of fibers, strings, and / or flexible protrusions that are soft or elastic and are adapted to contact the substrate surface during processing. Fibers include at least partially conductive materials, such as fibers composed of dielectric material coated with a conductive material as described. The fibers may also be substantially hollow or not to increase or decrease the flexibility or compliance of the fibers.

In the embodiment shown in FIG. 9A, the conductive element 904 is a plurality of conductive sub-elements 913 coupled to the base 909. Conductive submember 913 includes fibers that are at least partially electrically conductive, as described. Examples of the conductive submember 913 include nylon fibers or carbon fibers coated with gold as described. Base 909 is also connected to connector 990 including an electrically conductive material. Base 909 may also be coated with a layer of conductive material, such as copper, which dissolves from the polishing pad component during polishing, which extends the operational durability of the conductive fiber.

Conductive element 904 is generally disposed in recess 908 formed in polishing surface 906. The conductive element 904 will have a direction within the range of 0 to 90 ° relative to the polishing surface 906. In the embodiment where the conductive element 904 is perpendicular to the polishing surface 906, the conductive element 904 is partially disposed on the polishing surface 906.

The recess 908 has a lower mounting portion 910 and an upper gap portion 912. The mounting portion 910 is configured to receive the base 909 of the conductive element 904 and hold the conductive element 904 by press fitting, clamping, adhesive, or some other method. Gap 912 is disposed at the point where recess 908 crosses polishing surface 906. The gap 912 is generally wider in cross section than the mounting 910 so that the conductive element 904 bends and is not positioned between the substrate and the polishing surface 906 when the conductive element 904 contacts the substrate during processing.

9B illustrates another embodiment of a polishing article 900 having a conductive surface 940 and a number of separate conductive elements 920 formed on the conductive surface. Conductive elements 920 comprising fibers of dielectric material coated with a conductive material are positioned perpendicular to the conducting surface 940 of the polishing article 205 and are horizontal to each other. The conductive element 920 of the polishing article 900 generally has a direction in the range of 0 to 90 ° with respect to the conductive surface 940 and is inclined in any polar direction with respect to a line perpendicular to the conductive surface 940. Can lose. The conductive element 920 may be formed across the length of the polishing pad as shown in FIG. 9B, or may be disposed only in a predetermined region of the polishing pad. The contact height of the conductive element 920 over the polishing surface is up to about 5 mm. The diameter of the material comprising conductive element 920 ranges from about 1 mil (1 / 000th of an inch) to 10 mils. The height above the polishing surface and the diameter of the conductive element 920 may vary depending on the polishing process performed.

The conductive element 920 is sufficiently soft or elastic to reduce or minimize scratching to the substrate surface and to deform under contact pressure while maintaining electrical contact with the substrate surface. In the embodiment shown in FIGS. 9A and 9B, the substrate surface is only in contact with the conductive element 920 of the polishing article 205. Conductive element 920 is disposed to provide a uniform current density to the surface of polishing article 205.

Conductive element 920 is coupled to the conductive surface by a non-conductive or dielectric adhesive or binder. The non-conductive adhesive provides a dielectric coating on the conductive surface 940 to provide an electrochemical barrier between the conductive surface 940 and any surrounding electrolyte. Conductive surface 940 is in the form of a belt or a linear web of round polishing pads or polishing articles 205. A series of perforations (not shown) are disposed on the conducting surface 940 to provide flow of electrolyte therethrough.

Although not shown, a conductive plate may be disposed on a support pad of conventional polishing material for positioning or adjusting the polishing article 900 on a rotating or linear polishing table.

10A shows a schematic perspective view of one embodiment of a polishing article 1000 that includes a conductive element 1004. Each conductive element 1004 is generally a loop or ring having a first end 1008 and a second end 1010 disposed in a recess 1012 formed in the polishing surface 1024. 1006 is included. Each conductive element 1004 is coupled with an adjacent conductive element to form a plurality of loops 1006 extending over the polishing surface 1024. In the embodiment shown in FIG. 10A, each loop 1006 is made of fibers coated with a conductive material and bonded to the loop base 1014 attached to the recess 1012. An example of the loop 1006 is a nylon fiber coated with gold.

The loop 1006 contact height over the polishing surface is between about 0.5 mm to about 2 mm and the diameter of the material comprising the loop ranges from about 1 mil (1/000 of an inch) to 50 mils. Loop base 1014 is a conductive material such as titanium, copper, platinum, or platinum coated copper. Loop base 1014 may also be coated with a layer of conductive material, such as copper, which is dissolved from the polishing pad during the polishing process. The conductive material layer on the loop base 1014 is dissolved prior to the underlying loop 1006 material or loop base 1014 material to extend the life of the conductive element 1004. The conductive element 1004 has a direction in the range of 0 to 90 ° with respect to the polishing surface 1024, and can be tilted in any polar direction with respect to a line perpendicular to the polishing surface 1024. Conductive element 1004 is connected to a power source by electrical connector 1030.

10B shows a schematic perspective view of another embodiment of a polishing article 1000 that includes a conductive element 1004. Conductive element 1004 includes a single wire coil 1005 consisting of fibers coated with a conductive material as described. Coil 1005 is connected to a conductive portion 1007 disposed on base 1014. Coil 1005 may surround conductive portion 1007, surround base 1014, or be attached to the surface of base 1014. Conductive rods include a conductive material such as gold, and generally include a conductive material that is chemically inert with any electrolyte used in the polishing process, such as gold or platinum. In another embodiment, a sacrificial layer 1009 such as copper is disposed on base 1014. The sacrificial material layer 1009 generally has a conductive portion for prior removal of the chemically reactant material, as compared to the material of the conductive portion 1007 and the coil 1005, during polishing on the electropolishing or oxidative dissolving side. More chemically reactive materials such as copper are used (1007). Conductive portion 1007 is connected to a power source by electrical connector 1030.

The biasing member is placed between the conductive element and the body to provide a bias that keeps the conductive element away from the body and contacts the substrate surface during the cleaning process. An illustration of the biasing member 1018 is shown in FIG. 10B. However, the present invention contemplates that the conductive element shown by way of example in FIGS. 8A-8D, 9A, 10A-10D can be used as the deflection member. The biasing member may be a device capable of deflecting an elastic material or a compression spring, a flat spring, a coil spring, a foam polyurethane (e.g., a foam polymer such as PORON ^® polymer, an elastomer, a bladder, or a conductive element) Equipment including other members, etc. The biasing member is a compliant or elastic material, such as a compliant foam or air soft tube that can deflect conductive elements and promote contact with the substrate surface during cleaning. The biased conductive element may form a plane with the cleaning article surface or may extend over the cleaning article surface plane.

10C shows a schematic perspective view of another embodiment of a cleaning article 1000 with a plurality of conductive elements 1004, laid out in a radial pattern from the center of the substrate to the edges. Multiple conductive elements can be displaced at intervals of 15, 30, 45, 60, and 90 degrees from one another and any other desired combination. Conductive elements 1004 are generally spaced apart to evenly apply current or power for substrate cleaning. The conductive elements can be spaced apart so as not to contact each other. The wedge portion 1004 of the dielectric cleaning material of the body 1026 may be configured to electrically insulate the conductive element 1004. Spacers or recessed regions 1060 are formed in the cleaning article and are formed to insulate the conductive elements 1004 from each other. The conductive element 1004 may be in the form of a loop shown in FIG. 10A or in the form of a vertically extending fiber shown in FIG. 9B.

FIG. 10D shows a schematic perspective view of an alternative embodiment of the conductive element 1004 of FIG. 10A. Conductive element 1004 is interwoven with conductive fiber 1006, described as having a first end 1008 and a second end 1010 lying in depressions 1012 formed within polishing surface 1024. Meshes or fabrics of the to form one continuous conductive surface for contacting the substrate. The mash or fabric may be one or more layers of interwoven fiber. The mesh or fabric comprising conductive element 1004 is shown in a single layer in FIG. 10D. Conductive element 1004 may extend over polishing surface 1024 or be coupled to conductive base 1014 as shown in FIG. 10A. The conductive element 1004 may be connected to a power supply by an electrical connector 1030 connected to the conductive base 1014.

FIG. 10E shows a partial, schematic perspective view of another embodiment having a conductive element 1004 having a loop 1006 formed therein and ensuring a conductive element in the body 1026 of the cleaning article. A passage 1050 is formed in the body 1024 of the cleaning article across the groove 1070 for the conductive element 1004. Insertion 1055 lies within passage 1050. Insertion 1055 includes a conductive material, such as gold or the same material as conductive element 1006. Next, the connector 1030 may be placed in the passage 1050 and in contact with the insert 1055. Connector 1030 is connected with a power supply. End 1075 of conductive element 1004 may contact insert 1055 for the flow of power therethrough. The connector 1030 and the end 1075 of the conductive element 1004 are secured to the conductive insert 1055 by the dielectric insert 1060. The present invention contemplates using passageways for all loops 1006 of conductive element 1004 at intervals along the length of conductive element 1004 or only at the extreme end of conductive element 1004.

11A-11C are a series of schematic side views illustrating the elastic capacity of a ring or loop of conductive material disclosed herein. The cleaning article 1100 includes a polishing surface 1110 overlying a sub-pad 1120 formed beyond a pad support 1130 with grooves or recesses 1140 therein. A conductive element 1142 comprising a loop or ring 1150 of dielectric material coated with a conductive material is placed in the recess 1170 on the base 1155 and connected to the dielectric contact 1145. The substrate 1160 is in contact with the cleaning article 1100 and moves relative to the surface of the cleaning article 1100. As shown in FIG. 11B, the loop 1150 is compressed into the recess 1140 while the substrate is in electrical contact with the substrate 1160 while in contact with the conductive material 1142. As the substrate travels a sufficient distance that it no longer contacts the conductive element 1142, the elastic loop 1150 returns to its uncompressed form for further processing, as shown in FIG. 11C.

Another embodiment of a conductive cleaning pad is disclosed in US Provisional Patent 10 / 033,732, filed December 27, 2001, which is incorporated herein in its entirety.

Power application

Power may be connected to the cleaning article 205 described above using the connectors or power delivery devices described herein. The power delivery device is disclosed in US Provisional Patent No. 10 / 033,732, filed December 27, 2001, which is incorporated herein in its entirety.

Referring back to FIGS. 11A-11C, power may be connected to the conductive element 1140 using an insulating contact 1145 that includes a mount or conductive plate placed in a groove or recess 1170 formed in the cleaning pad. In another embodiment shown in FIG. 11A, conductive element 1140 is fixed on a metal plate such as gold, which is provided on a support such as disk 206 with a cleaning article 1100 as shown in FIG. 2. Is fixed to. Alternatively, electrical contacts may be placed on the cleaning pad material between the conductive element and the cleaning pad material, for example, between the conductive element 840 and the body 810 shown in FIGS. 8A and 8B. The electrical contacts are then connected to the power supply by leads (not shown) described in FIGS. 8A-8D.

12A-12D schematically illustrate the front and side views of an embodiment of a cleaning article with extensions connected to a power supply (not shown). The power supply provides current carrying capability, i.e., provides an anode bias to the substrate surface for anodization in ECMP processing. The power supply may be connected to the cleaning article by one or more conductive contacts placed around the conductive cleaning portion and / or the article support portion of the cleaning article. One or more power sources may be connected to the cleaning article by one or more contacts to generate various biases or currents across the substrate surface portion. Alternatively, one or more leads may be formed in the conductive cleaning portion and / or article support portion, which are connected to a power supply.

12A is a top view of one embodiment of a conductive cleaning pad connected to a power supply by a conductive connector. The conductive cleaning portion may have an extension and is, for example, a shoulder or each plug formed in the conductive cleaning portion 1210 with a larger width or diameter than the article support portion 1220. The extension is bound to a power supply by connector 1225 to provide electrical current to the cleaning article 205. In FIG. 12B, extension 1215 may be formed in parallel or transverse from the plane of conductive cleaning portion 1210 and extends beyond the diameter of cleaning support portion 1220. The pattern of holes or grooves is shown in FIG. 6.

12B is a cross-sectional view of one embodiment of a connector 1225 connected to a power source (not shown) connected through a conductive passage 1232, such as a wire. The connector includes an electrical coupling 1234 connected to the conductive passage 1232 and is electrically connected to the conductive cleaning portion 1210 of the extension 1215 by a conductive fixation 1230 such as a screw. The bolt 1238 may be connected to a conductive fixture 1230 that secures the conductive cleaning portion 1210 therebetween. A spacer 1236, such as a washer, may be placed between the conductive cleaning portion 1210 and the fixture 1230 and the bolt 1238. Spacer 1236 may include a conductive material. Fixing portion 1230, electrical coupling 1234, spacer 1236 and bolt 1238 may be made of a conductive material such as, for example, gold, platinum, titanium, aluminum, or copper. If a material such as copper is used that can react with the electrolyte, the material may be masked with a material that does not react with the electrolyte such as platinum. Alternative embodiments of conductive fixtures not shown may include conductive clamps, conductive adhesive tape, or conductive adhesives.

FIG. 12C schematically illustrates a cross-sectional view of one embodiment of a connector 1225 connected to a power supply (not shown) via a support 1260, such as the top surface of a platen or disk 206 shown in FIG. 2. As shown. The connector 1225 is connected to the support 1260 by including a fixing part 1240 such as a screw or bolt having a sufficient length to penetrate the conductive cleaning portion 1210 of the extension 1215. Space 1242 may lie between conductive cleaning portion 1210 and fixture 1240.

The support is generally suitable for receiving the fixation 1240. The gap 1246 can be formed within the surface of the support 1260 to accommodate the fixation shown in FIG. 12C. Alternatively, the electrical coupling has a fixing portion that lies between the conductive cleaning portion 1210 and the fixing portion 1240 and is connected to the support 1260. The support 1260 may be connected to the power supply by a conductive passage 1232, such as a wire, may be permanently connected to the power supply, may be connected to the cleaning platen or chamber, or may be integrated with the cleaning platen or chamber It may be connected to a source to provide an electrical connection with the conductive cleaning portion 1210. The conductive passage 1232 may be integrated with the support 1260 or may extend from the support 1260 as shown in FIG. 12B.

In another embodiment, the fixture 1240 may be integrated with an extension of the support 1260 extending through the conductive cleaning portion 1215 and secured by the bolt 1248 as shown in FIG. 12D. .

12E and 12F schematically depict side and development views of another embodiment of powering a cleaning article 1270 with a power coupling 1285 positioned between the cleaning portion 1280 and the article support portion 1290. As shown. The cleaning portion 1280 is made of the conductive cleaning material described or includes a plurality of conductive elements 1275 described. Conductive elements 1275 are physically spaced apart from each other, as shown in FIG. 12F. Conductive element 1275 formed within the polishing surface is suitable for electrically contacting power coupling 1285 as by the conductive base of the element.

The power coupling 1285 connects the wires interconnecting the elements 1275, the multiple parallel wires interconnecting the elements 1275, the multiple wires independently connecting the elements 1275, or the element 1275. Wire meshes interconnecting devices that connect to one or more power sources. Independent power sources connected to independent wires and devices can have various powers applied while the interconnected wires and devices supply uniform power to the devices. The power connection covers all or part of the diameter and width of the cleaning article. The power connection 1285 of FIG. 12F is one embodiment of a wire mash that interconnects devices that connect devices 1275. The power connection 1285 may be connected to the power supply by a conductive passage 1287, such as a wire, may be permanently connected to the power supply, may be connected to the cleaning platen or chamber, or may be integrated with the cleaning platen or chamber. Connected to the power supply.

polishing  Abrasive element on the surface

13A and 13B are top and partial views of another embodiment of a conductive article 1400. The conductive component 1400 has an abrasive shape extending from the polishing surface 1402 of the conductive portion 1404 of the conductive component 1400. The abrasive shape may be abrasive particles as described above in FIG. 3 or may be a deep abrasive element 1406 as shown in FIGS. 14A and 14B.

In one embodiment, the abrasive element 1406 is a bar received in each slot 1408 formed in the polishing surface 1402 of the conductive article 1400. The abrasive member 1406 is generally configured to extend from the polishing surface 1402 and remove the passivation layer of the metal surface of the substrate to be cleaned, exposing the metal to be emphasized for electrolyte and electrochemical action, thus increasing the cleaning rate during the treatment. Let's do it. The abrasive member 1406 may be formed from a ceramic, inorganic, organic, or polymeric metal that is strong enough to break the passivation layer formed on the metal surface. An embodiment is a bar or strip composed of conventional cleaning pads, such as polyurethane pads placed within conductive article 1400. In the embodiment shown in FIGS. 13A-B, the abrasive element 1406 has a strength of at least about 30 Shore D or is strong enough to corrode the passivation layer of material to be cleaned. In one embodiment, the abrasive element 1406 is stronger than copper. The polymer particles are hard or spongy to match the wear rate of the abrasive 1406 relative to the surrounding conductive portion 1404.

The abrasive element 1406 can be configured on the polishing surface 1402 in various geometric shapes or in any configuration. In one embodiment, the abrasive element 1406 is radial on the polishing surface 1402, but other directions, such as the spiral, lattice, parallel, and concentric directions of the abrasive element 1406, may also be considered.

In one embodiment, the elastic member 1410 may be placed in each slot 1408 between the abrasive element 1406 and the conductive portion 1404. The elastic member 1410 allows the abrasive element 1406 to move relative to the conductive portion 1404, thereby allowing the substrate to be more compliant for more consistent removal of the passivation layer during cleaning. Furthermore, the compliance of the elastic member 1410 is chosen to match the relative pressure applied to the substrate by the abrasive element 1406 and the polishing surface 1402 of the conductive portion 1404 to balance the antifreeze layer removal rate against the passivation layer formation rate. As a result, the metal layer is minimally exposed to the abrasive element 1406 and cleaned to minimize potential scratches.

polishing  Conductive balls extending from the surface

14A-14B are top and cross-sectional views of an alternative embodiment of conductive component 1500. The conductive element 1500 includes a conductive roller 1506 extending from the polishing surface 1502 of the upper portion 1504 of the conductive component 1500. The roller 1506 may be lowered to the same plane of the polishing surface 1502 by the substrate during cleaning. The conductive roller bearing conductive component 1500 is connected to an external power supply (not shown) at high voltage for high removal rate of the cleaning substrate during processing.

The conductive roller 1506 may be fixed relative to the upper portion 1504 or may be rolled freely. Conductive roller 1506 may be balls, cylinders, pins, ellipsoids, or any other shape that prevents scratching of the substrate during processing.

In one embodiment shown in FIG. 14B, the conductive roller 1506 is a plurality of balls lying within one or more conductive carriers 1520. Each conductive carrier 1520 lies in a slot 1508 formed in the polishing surface 1502 of the conductive component 1500. The conductive roller 1506 is generally configured to extend from the polishing surface 1502 and provide electrical contact with the metal surface of the substrate to be cleaned. Conductive roller 1506 may be formed of a conductive material or may be formed of core 1522 coated at least in part with conductive covering 1524. In one embodiment shown in FIG. 14B, the conductive roller 1506 has a polymer core 1522 at least partially covered with a soft conductive material 1524. One embodiment is a discussion polymer core coated with a conductive gold layer using copper as the seed layer between the TORLON ^™ and the gold layer.

In one embodiment, the polymer core 1522 is selected from an elastic material, such as polyurethane, that deforms when the roller 1506 contacts the substrate during cleaning. As the roller 1506 deforms, the contact area between the roller 1506 and the substrate increases, thus increasing the current flow between the roller 1506 and the conductive layer placed on the substrate, thus enhancing the cleaning result.

Conductive roller 1506 may be arranged on a polishing surface 1502 in various geometric or arbitrary configurations. In one embodiment, the conductive roller 1506 is directed radially onto the polishing surface 1502, but other directions, such as the spiral, lattice, parallel axis, and coaxial directions of the conductive roller 1506, may be between other directions. Is expected.

As shown in FIG. 14B, the resilient member 1510 may be disposed in each slot 1508 between the conductive carrier 1520 and the conductive portion 1504. Resilient member 1510 allows conductive roller 1506 (and carrier 1520) to move relative to conductive portion 1504 to provide improved compliance for more uniform electrical contact during polishing. A window (not shown) may be formed in the conductive article 1500 as described above with reference to FIG. 7 to facilitate process control.

Conductive article with insert pad

15 is a cross-sectional view of another embodiment of a conductive article 1600. The conductive article generally includes a conductive portion 1602, an article support portion 1604 and an inserted pad 1606 that fits between the conductive portion 1602 and the article support portion 1604 during polishing. Conductive portion 1602 and article support portion 1604 may be arranged or equivalent to any of the embodiments described above in the present invention. An adhesive layer 1608 may be provided on each side of the insert pad 1606 to connect the insert pad 1606 with the article support portion 1604 and the conductive portion 1602. Conductive portion 1602, article support portion 1604 and insertable pad 1606 may be connected by an alternative method so that components of conductive article 1600 can be easily replaced with a single unit after the end of their service life, Simplify replacement, listing, and order management of conductive article 1600.

Optionally, support portion 1604 may be connected to electrode 204 and may be replaced with conductive article 1600 in a single unit. Conductive article 1600, optionally including electrode 204, may include a window that is shown with reference to FIG. 7F and formed as described above.

Insert pad 1606 is generally harder than article support portion 1604 and harder than conductive portion 1602. The present invention contemplates that the insert pad 1606 may alternatively be softer than the conductive portion 1602. The hardness of the insert pad 1606 is selected to provide stiffness to the conductive article 1600 and improves the cushioning properties of the conductive article 1600, resulting in a very good overall planarization of the surface being polished, while the conductive portion 1602 and the article Extends the machine life of both support portions 1604. In one embodiment, the insert pad 1606 has a hardness less than or equal to about 80 shores (D), and the article support portion 1064 has less than or equal to about 80 shores (A), while the conductive portion 1602 ) Is less than about 100 Shore (D) or has the same hardness. In other embodiments, the insert pad 1606 is less than or equal to about 35 mils, while the article support portion 1604 is less than or equal to about 100 mils or the same thickness.

The insert pad 1606 may be made of a dielectric material, the material of which laminate is electrically routed including the conductive article 1600 (ie, the conductive portion 1602, the insert pad 1606 and the article support portion 1604). Can be installed via a stack). The electrical path can be installed as if conductive article 1600 is covered or submerged with a conductive fluid such as an electrolyte. To facilitate the installation of an electrical path through conductive article 1600, insert pad 1606 may be either permeable or porous to allow electrolyte to flow through the pad.

In one embodiment, implantable pad 1606 is made of a dielectric material compatible with electrolyte and electrochemical processes. Suitable materials include, inter alia, polymers such as polyurethanes, polyesters, mylar sheets, epoxies and polycarbonates.

Optionally, conductive backing 1610 may be disposed between insert pad 1606 and conductive portion 1602. Conductive backing 1610 generally improves polishing uniformity by equalizing dislocations across conductive portion 1602. Having the same potential across the polishing surface of the conductive portion 1602 is a conductive material to be polished, especially if the conductive material is no longer a continuous film (ie, a film residue of discrete islands). And good electrical contact between the conductive portion 1602. In addition, conductive backing 1610 provides mechanical strength to conductive portion 1602 to increase the endurance life of conductive article 1600. The use of conductive backing 1610 is advantageous in embodiments where the resistance through the conductive portion is greater than about 500 m-kV and enhances the mechanical integrity of the conductive portion 1602. Conductive backing 1610 may be used to enhance conductivity uniformity and lower electrical resistance of conductive portion 1602. Conductive backing 1610 may be made of metal foil, metal screens, metal coated fabrics or nonwovens, among suitable conductive materials compatible with the polishing process. In other embodiments, conductive backing 1610 may be compression molded to conductive portion 1602. The backing 1610 is arranged so as not to disturb the flow of electrolyte between the conductive portion 1604 and the insert pad 1606. Conductive portion 1602 may be mounted on conductive backing 1610 via compression molding, lamination, injection molding, and other suitable methods.

16 is a cross-sectional view of another embodiment of a conductive article 1600. Conductive article 1700 is generally an insert that is sandwiched between conductive portion 1602, conductive backing 1610, article support portion 1604, and conductive portion 1602 and article support portion 1604 that contact the substrate during polishing. Pad 1706, and has a structure similar to conductive article 1600 described above.

In the embodiment shown in FIG. 16, the insert pad 1706 is made of a material having a plurality of cells 1708. Cell 1708 is generally filled with air or other fluid and provides resilience and compliance that enhances processing. The cell may be open or closed to a size ranging from 0.1 μm to a given mm, such as 1 μm to 1 mm. The present invention contemplates other sizes that may be suitable for the insert pad 1706. Insertion pad 1706 may be either permeable or porous to allow electrolyte to flow through the pad.

Insert pad 1706 may be made of a dielectric material that is compatible with electrolyte and electrochemical processes. Suitable materials include, but are not limited to, foamed polymers such as foamed polyurethane and mylar sheets. The insert pad 1706 is generally less compressible than the article support portion or the bottom-pad 1604 and has more local deformation independence when pressure is applied.

17 is a cross-sectional view of another embodiment of a conductive article 1800. Conductive article 1800 includes conductive portion 1802 connected to article support portion 1804. Optionally, conductive article 1800 includes conductive backings and insert pads (both not shown) disposed between conductive portion 1802 and article support portion 1804.

Conductive article 1800 is generally formed through the article such that an electrolyte or other processing fluid passes between the upper polishing surface 1808 of conductive portion 1802 and the lower mounting surface 1810 of article support portion 1804. A plurality of openings 1806. Edges 1812 formed as each opening 1806 intersects the upper polishing surface 1808 outlines the removal of any sharp corners, burrs or surface irregularities that may scratch the substrate during processing. Contours of edge 1812 may include radiused, chamfered surfaces or other configurations to smooth edge 1812 and facilitate scratch minimization.

In an embodiment, where the conductive portion 1802 is at least partially made of a polymer, smoothing of the edges 1812 may be achieved by forming the opening 1806 before the polymer is fully cured. Thus, edge 1812 can be rounded as conductive portion 1802 shrinks during the remainder of the polymer curing cycle.

Additionally or alternatively, edge 1812 may be rounded by applying one or more of heat or pressure during or after curing. In one embodiment, edge 1812 may be wiped to round, heated or burned to relieve between polishing surface 1808 and opening 1806 at edge 1812.

In other embodiments, the polymer conductive portion 1802 may be composed of a moldable material with repulsive force on a mold or die. The repulsive force of the polymer conductive portion 1802 causes surface tension that causes stress to be molded into the polymer conductive portion 1802, causing the material to fall from the mold, causing the edge 1812 of the opening 1806 to round while curing. do.

Opening 1806 may be formed through conductive article 1800 prior to or after assembly. In one embodiment, the opening 1806 includes a first hole 1814 formed in the conductive portion 1802 and a second hole 1816 formed in the article support portion 1804. In embodiments that include an insert pad, a second hole 1816 is formed inside the pad. Alternatively, at least a portion of the first and second holes are formed in conductive portion 1802. The first hole 1814 has a diameter larger than the diameter of the second hole 1816. A second hole 1816 having a smaller diameter below the first hole 1814 provides side support to the conductive portion 1802 that surrounds the first hole 1814, during polishing Improve resistance to pad shear or rotational force. Thus, openings 1806 including larger holes in the surface 1808 disposed to be centered on the smaller holes at the bottom cause less deformation of the conductive portion 1802 while minimizing particle generation, resulting in pad damage. Minimize substrate defects that occur.

The openings in the conductive article may be punched through mechanical methods such as male / female punching before or after all the layers are aligned with each other. In one embodiment, the conductive portion 1802 that is compression molded onto the conductive backing is first mounted to the insertable layer, wherein the conductive portion 1802 and the insertable layer with the conductive backing are mechanically penetrated from each other, and the article support portion or sub- The pads are each mechanically penetrated, after which they are aligned with each other. In another embodiment, all the layers are pierced after being aligned with each other. The present invention contemplates any penetrating techniques and sequences.

Accordingly, various embodiments of conductive articles are provided that may be suitable for electrochemical polishing of a substrate. Conductive articles provide good compliance to the surface of the substrate to promote uniform electrical contact that enhances polishing performance. In addition, the conductive article is arranged to minimize scratches during processing, advantageously reducing the occurrence of defects, thereby lowering the unit cost of processing.

The foregoing is directed to various embodiments of the invention, and other embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the following claims.

Claims (39)

Fiber layer, and A conductive layer arranged on the fibrous layer and having an exposed surface for polishing a substrate, Polishing article for substrate processing. The method of claim 1, Wherein the fibrous layer further comprises a fabric material, Polishing article for substrate processing. The method of claim 2, The textile material is coated or made with, or coated and made with, a soft conductive material, Polishing article for substrate processing. The method of claim 3, wherein The soft conductive material is selected from gold, tin, palladium, palladium-tin alloys, platinum, lead, and metal alloys and ceramic composites that are softer than copper, Polishing article for substrate processing. The method of claim 1, Wherein the fibrous layer comprises a non-woven material, Polishing article for substrate processing. The method of claim 1, The conductive layer further comprises gold, tin, palladium, palladium-tin alloys, platinum, lead, and soft metals selected from softer metal alloys and ceramic composites than copper, Polishing article for substrate processing. The method of claim 1, The conductive layer has a hardness and modulus less than copper, Polishing article for substrate processing. The method of claim 1, The exposed surface of the conductive layer has a flatness of about ± 1 mm or less, Polishing article for substrate processing. The method of claim 1, Wherein the conductive layer comprises a plurality of abrasive particles arranged therein, Polishing article for substrate processing. The method of claim 1, The conductive layer further comprising a convex top surface, Polishing article for substrate processing. The method of claim 1, The conductive layer further comprises a plurality of perforated holes formed through Polishing article for substrate processing. The method of claim 1, Further comprising a window arranged through the conductive layer and the fiber layer, Polishing article for substrate processing. The method of claim 12, The window further comprises a transparent material arranged in at least one of the conductive layer or the fiber layer, Polishing article for substrate processing. The method of claim 1, An article support layer made of a dielectric material having a hardness less than that of the conductive layer, and Further comprising an intermediate layer bonded between the article support layer and the conductive layer and having a greater hardness than the article support layer, Polishing article for substrate processing. The method of claim 14, The intermediate layer has a Shore D hardness of about 80 or less, the conductive layer has a Shore D hardness of about 80 or less, and the article support layer has a Shore A hardness of about 80 or less, Polishing article for substrate processing. The method of claim 14, Wherein said intermediate layer comprises a polymeric material, Polishing article for substrate processing. The method of claim 1, Further comprising a conductive backing coupled to the fiber layer opposite the conductive layer, Polishing article for substrate processing. The method of claim 1, Further comprising an electrode coupled to the fiber layer opposite the conductive layer, Polishing article for substrate processing. The method of claim 18, The electrode further comprises a plurality of independently electrically deflectable regions, Polishing article for substrate processing. The method of claim 1, A plurality of balls partially extending over the exposed surface of the conductive layer, and Further comprising a soft conductive material at least partially covering the ball, Polishing article for substrate processing. The method of claim 20, One or more balls have a polymer core, Polishing article for substrate processing. The method of claim 1, The conductive layer further comprising a polymer matrix having a conductive material arranged therein, Polishing article for substrate processing. The method of claim 22, The conductive material is selected from gold, tin, palladium, palladium-tin alloys, platinum, lead, and softer metal alloys and ceramic composites than copper, Polishing article for substrate processing. The method of claim 22, The conductive material is tin particles, and the fiber layer further comprises copper coated fibers, Polishing article for substrate processing. The method of claim 22, The conductive material has a hardness and modulus less than or equal to copper, Polishing article for substrate processing. The method of claim 22, The conductive material further comprises a plurality of conductive particles comprising at least one gold, tin, palladium, palladium-tin alloy, platinum and lead, Polishing article for substrate processing. The method of claim 22, Wherein the conductive material further comprises a carbon-based material, Polishing article for substrate processing. The method of claim 22, The conductive material may be a conductive particle, carbon powder, carbon fiber, carbon nanotube, carbon nanofoam, carbon aerogel, graphite, conductive fiber, intrinsic conductive polymer, dielectric or conductive particles coated with a conductive material, dielectric filler coated with a conductive material At least one of materials, conductive inorganic particles, metal particles, conductive ceramic particles, and combinations thereof, Polishing article for substrate processing. A conductive layer having an upper polishing surface for polishing the substrate, An article support layer made of a dielectric material and having a hardness less than that of the conductive layer; An intermediate layer bonded between the article support layer and the conductive layer and having a greater hardness than the article support layer, and A plurality of holes formed through the conductive layer, the intermediate layer, and the article support layer, At least one of the holes has a first hole formed in an upper surface of the conductive layer and a second hole formed below the first hole, the first hole having a larger diameter than the second hole, Polishing article for substrate processing. The method of claim 29, The conductive layer further comprising a conductive material polishing the substrate and arranged in a polymeric binder; Polishing article for substrate processing. The method of claim 30, Further comprising a plurality of abrasive particles arranged in the polymer binder, Polishing article for substrate processing. The method of claim 30, The conductive layer further comprising a fiber layer arranged below the polishing layer, Polishing article for substrate processing. The method of claim 29, Further comprising an electrode having a plurality of independently deflectable regions, Polishing article for substrate processing. The method of claim 33, wherein Wherein the conductive layer, article support layer, and electrode are formed of one replaceable assembly, Polishing article for substrate processing. A conductive layer having an upper polishing surface for polishing the substrate, An article support layer made of a dielectric material having a hardness less than that of the conductive layer; An intermediate layer bonded between the article support layer and the conductive layer and having a greater hardness than the article support layer, An electrode coupled to the article support layer opposite the intermediate layer, and A window formed through the electrode, the conductive layer, the intermediate layer, and the article support layer, Wherein the electrode, conductive layer, intermediate layer and article support layer are formed of one replaceable unit, Polishing article for substrate processing. 36. The method of claim 35 wherein A plurality of holes formed through the conductive layer, the intermediate layer, and the article support layer, wherein one or more of the holes are formed in the conductive layer, a second hole formed in the intermediate layer, and the Having a third hole formed in the article support layer, the first hole having a larger diameter than the second hole, Polishing article for substrate processing. The method of claim 36, Further comprising an electrode having a plurality of independently deflectable regions, Polishing article for substrate processing. The method of claim 36, The conductive layer is a first layer formed on the article support layer, and Further comprising a second layer comprising a conductive material arranged in a polymer matrix, wherein the second layer is arranged on the first layer, Polishing article for substrate processing. The method of claim 38, The conductive material is selected from gold, tin, palladium, palladium-tin alloys, platinum, lead, and softer metal alloys and ceramic composites than copper, Polishing article for substrate processing.

Images