TW200520149A - Method of forming bit line contact - Google Patents

Method of forming bit line contact

Info

Publication number
TW200520149A
TW200520149A TW092134532A TW92134532A TW200520149A TW 200520149 A TW200520149 A TW 200520149A TW 092134532 A TW092134532 A TW 092134532A TW 92134532 A TW92134532 A TW 92134532A TW 200520149 A TW200520149 A TW 200520149A
Authority
TW
Taiwan
Prior art keywords
bit line
dielectric layer
line contact
layer
gate electrode
Prior art date
Application number
TW092134532A
Other languages
Chinese (zh)
Other versions
TWI225686B (en
Inventor
Shih-Fan Kuan
Kuo-Chien Wu
Original Assignee
Nanya Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanya Technology Corp filed Critical Nanya Technology Corp
Priority to TW92134532A priority Critical patent/TWI225686B/en
Application granted granted Critical
Publication of TWI225686B publication Critical patent/TWI225686B/en
Publication of TW200520149A publication Critical patent/TW200520149A/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

The present invention disclose a method of forming bit line contact, comprising providing a substrate having a plurality of transistors with a gate electrode and a doping area consisted of source and drain. A first dielectric layer is formed on the substrate. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer and a portion of the first dielectric layer are removed on the bit line contact area. A protecting layer is formed on the second dielectric layer and a portion of the gate electrode and first dielectric layer. The second dielectric layer and the protecting layer on the gate electrode are ion doping, and the un-doped protecting layer is then removed. The first dielectric layer on the doping area surface of the bit line contact is removed to form a bit line contact. A conductive layer is finally filled into the bit line contact to form a bit line contact plug.
TW92134532A 2003-12-08 2003-12-08 Method of forming bit line contact TWI225686B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92134532A TWI225686B (en) 2003-12-08 2003-12-08 Method of forming bit line contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92134532A TWI225686B (en) 2003-12-08 2003-12-08 Method of forming bit line contact

Publications (2)

Publication Number Publication Date
TWI225686B TWI225686B (en) 2004-12-21
TW200520149A true TW200520149A (en) 2005-06-16

Family

ID=34588411

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92134532A TWI225686B (en) 2003-12-08 2003-12-08 Method of forming bit line contact

Country Status (1)

Country Link
TW (1) TWI225686B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110610922A (en) * 2018-06-14 2019-12-24 华邦电子股份有限公司 Contact structure and forming method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9818834B2 (en) * 2016-01-07 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110610922A (en) * 2018-06-14 2019-12-24 华邦电子股份有限公司 Contact structure and forming method thereof

Also Published As

Publication number Publication date
TWI225686B (en) 2004-12-21

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Legal Events

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