TW200520149A - Method of forming bit line contact - Google Patents
Method of forming bit line contactInfo
- Publication number
- TW200520149A TW200520149A TW092134532A TW92134532A TW200520149A TW 200520149 A TW200520149 A TW 200520149A TW 092134532 A TW092134532 A TW 092134532A TW 92134532 A TW92134532 A TW 92134532A TW 200520149 A TW200520149 A TW 200520149A
- Authority
- TW
- Taiwan
- Prior art keywords
- bit line
- dielectric layer
- line contact
- layer
- gate electrode
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 2
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
The present invention disclose a method of forming bit line contact, comprising providing a substrate having a plurality of transistors with a gate electrode and a doping area consisted of source and drain. A first dielectric layer is formed on the substrate. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer and a portion of the first dielectric layer are removed on the bit line contact area. A protecting layer is formed on the second dielectric layer and a portion of the gate electrode and first dielectric layer. The second dielectric layer and the protecting layer on the gate electrode are ion doping, and the un-doped protecting layer is then removed. The first dielectric layer on the doping area surface of the bit line contact is removed to form a bit line contact. A conductive layer is finally filled into the bit line contact to form a bit line contact plug.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92134532A TWI225686B (en) | 2003-12-08 | 2003-12-08 | Method of forming bit line contact |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92134532A TWI225686B (en) | 2003-12-08 | 2003-12-08 | Method of forming bit line contact |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI225686B TWI225686B (en) | 2004-12-21 |
TW200520149A true TW200520149A (en) | 2005-06-16 |
Family
ID=34588411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW92134532A TWI225686B (en) | 2003-12-08 | 2003-12-08 | Method of forming bit line contact |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI225686B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110610922A (en) * | 2018-06-14 | 2019-12-24 | 华邦电子股份有限公司 | Contact structure and forming method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9818834B2 (en) * | 2016-01-07 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device structure and method for forming the same |
-
2003
- 2003-12-08 TW TW92134532A patent/TWI225686B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110610922A (en) * | 2018-06-14 | 2019-12-24 | 华邦电子股份有限公司 | Contact structure and forming method thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI225686B (en) | 2004-12-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |