TW200518129A - Metal-insulator-metal (MIM) capacitor and fabrication method for making the same - Google Patents
Metal-insulator-metal (MIM) capacitor and fabrication method for making the sameInfo
- Publication number
- TW200518129A TW200518129A TW092132902A TW92132902A TW200518129A TW 200518129 A TW200518129 A TW 200518129A TW 092132902 A TW092132902 A TW 092132902A TW 92132902 A TW92132902 A TW 92132902A TW 200518129 A TW200518129 A TW 200518129A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- capacitor
- metal plate
- mim
- dielectric layer
- Prior art date
Links
- 239000002184 metal Substances 0.000 title abstract 14
- 239000003990 capacitor Substances 0.000 title abstract 12
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
A metal-insulator-metal (MIM) capacitor includes a first metal plate; a first capacitor dielectric layer disposed on the first metal plate and a second metal plate stacked on the first capacitor dielectric layer. The first metal plate, the first capacitor dielectric layer, and the second metal plate constitute a lower capacitor. A second capacitor dielectric layer is disposed on the second metal plate. A third metal plate is stacked on the second capacitor dielectric layer. The second metal plate, the second capacitor dielectric layer, and the third metal plate constitute an upper capacitor. The first metal plate and the third metal plate are electrically connected to a first terminal of the MIM capacitor, while the second metal plate is electrically connected to a second terminal of the MIM capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92132902A TWI232472B (en) | 2003-11-24 | 2003-11-24 | Metal-insulator-metal (MIM) capacitor and fabrication method for making the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92132902A TWI232472B (en) | 2003-11-24 | 2003-11-24 | Metal-insulator-metal (MIM) capacitor and fabrication method for making the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI232472B TWI232472B (en) | 2005-05-11 |
| TW200518129A true TW200518129A (en) | 2005-06-01 |
Family
ID=36320035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92132902A TWI232472B (en) | 2003-11-24 | 2003-11-24 | Metal-insulator-metal (MIM) capacitor and fabrication method for making the same |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI232472B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116209353A (en) * | 2023-05-06 | 2023-06-02 | 常州承芯半导体有限公司 | Capacitor structure and forming method thereof, semiconductor structure and forming method thereof |
-
2003
- 2003-11-24 TW TW92132902A patent/TWI232472B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI232472B (en) | 2005-05-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |