TW200515495A - Method of fabricating gate structures having a high-k gate dielectric layer - Google Patents
Method of fabricating gate structures having a high-k gate dielectric layerInfo
- Publication number
- TW200515495A TW200515495A TW093113287A TW93113287A TW200515495A TW 200515495 A TW200515495 A TW 200515495A TW 093113287 A TW093113287 A TW 093113287A TW 93113287 A TW93113287 A TW 93113287A TW 200515495 A TW200515495 A TW 200515495A
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric layer
- gate
- fabricating
- gate dielectric
- gate structures
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A method of fabricating gate structures having a high-k dielectric layer. A high-k dielectric layer is formed overlying a semiconductor substrate followed by formation of a patterned conductive layer thereon. The high-k gate dielectric layer is etched using a mixture of insert gas, fluoride gas, and chloride gas to form a gate stack structure. After etching the high-k gate dielectric layer, a chemical wet cleaning process is further carried out to remove the organic/inorganic high-k polymer residuals.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/688,045 US20050081781A1 (en) | 2003-10-17 | 2003-10-17 | Fully dry, Si recess free process for removing high k dielectric layer |
| US10/701,708 US20050092348A1 (en) | 2003-11-05 | 2003-11-05 | Method for cleaning an integrated circuit device using an aqueous cleaning composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI228763B TWI228763B (en) | 2005-03-01 |
| TW200515495A true TW200515495A (en) | 2005-05-01 |
Family
ID=36013525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93113287A TWI228763B (en) | 2003-10-17 | 2004-05-12 | Method of fabricating gate structures having a high-k gate dielectric layer |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI228763B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106611701A (en) * | 2015-10-27 | 2017-05-03 | 中微半导体设备(上海)有限公司 | Preparation method of semiconductor device |
-
2004
- 2004-05-12 TW TW93113287A patent/TWI228763B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI228763B (en) | 2005-03-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |