TW200513990A - A method of manufacturing array substrate - Google Patents

A method of manufacturing array substrate

Info

Publication number
TW200513990A
TW200513990A TW093116097A TW93116097A TW200513990A TW 200513990 A TW200513990 A TW 200513990A TW 093116097 A TW093116097 A TW 093116097A TW 93116097 A TW93116097 A TW 93116097A TW 200513990 A TW200513990 A TW 200513990A
Authority
TW
Taiwan
Prior art keywords
array substrate
layer
manufacturing array
intrinsic
exposed
Prior art date
Application number
TW093116097A
Other languages
Chinese (zh)
Other versions
TWI246666B (en
Inventor
Taro Hasumi
Takatoshi Tsujimura
Original Assignee
Chi Mei Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chi Mei Optoelectronics Corp filed Critical Chi Mei Optoelectronics Corp
Publication of TW200513990A publication Critical patent/TW200513990A/en
Application granted granted Critical
Publication of TWI246666B publication Critical patent/TWI246666B/en

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Weting (AREA)

Abstract

This invention provides a method of manufacturing a thin film transistor array substrate. The method includes an inactivated treatment using an oxidant solution to an intrinsic a-Si 18 which is exposed after the step of etching the doped semiconductor layer 20. In order to remove the deposit, the inactivated treatment includes a step of washing the exposed intrinsic a-Si layer 18 instead of inactivating the layer by plasma.
TW93116097A 2003-10-01 2004-06-03 A method of manufacturing array substrate TWI246666B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003343155A JP4248987B2 (en) 2003-10-01 2003-10-01 Method for manufacturing array substrate

Publications (2)

Publication Number Publication Date
TW200513990A true TW200513990A (en) 2005-04-16
TWI246666B TWI246666B (en) 2006-01-01

Family

ID=34537217

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93116097A TWI246666B (en) 2003-10-01 2004-06-03 A method of manufacturing array substrate

Country Status (2)

Country Link
JP (1) JP4248987B2 (en)
TW (1) TWI246666B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9721811B2 (en) 2009-12-04 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device having an oxide semiconductor layer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222261A (en) * 2011-04-13 2012-11-12 Mitsubishi Electric Corp Transistor, manufacturing method of the same and display device
MX2018010425A (en) 2016-03-02 2018-11-29 Agrimetis Llc Methods for making l-glufosinate.

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9721811B2 (en) 2009-12-04 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device having an oxide semiconductor layer
TWI609427B (en) * 2009-12-04 2017-12-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US10109500B2 (en) 2009-12-04 2018-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10490420B2 (en) 2009-12-04 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10714358B2 (en) 2009-12-04 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11456187B2 (en) 2009-12-04 2022-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor-device
US11923204B2 (en) 2009-12-04 2024-03-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device comprising oxide semiconductor

Also Published As

Publication number Publication date
JP4248987B2 (en) 2009-04-02
JP2005109321A (en) 2005-04-21
TWI246666B (en) 2006-01-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees