TW200513990A - A method of manufacturing array substrate - Google Patents
A method of manufacturing array substrateInfo
- Publication number
- TW200513990A TW200513990A TW093116097A TW93116097A TW200513990A TW 200513990 A TW200513990 A TW 200513990A TW 093116097 A TW093116097 A TW 093116097A TW 93116097 A TW93116097 A TW 93116097A TW 200513990 A TW200513990 A TW 200513990A
- Authority
- TW
- Taiwan
- Prior art keywords
- array substrate
- layer
- manufacturing array
- intrinsic
- exposed
- Prior art date
Links
Landscapes
- Thin Film Transistor (AREA)
- Weting (AREA)
Abstract
This invention provides a method of manufacturing a thin film transistor array substrate. The method includes an inactivated treatment using an oxidant solution to an intrinsic a-Si 18 which is exposed after the step of etching the doped semiconductor layer 20. In order to remove the deposit, the inactivated treatment includes a step of washing the exposed intrinsic a-Si layer 18 instead of inactivating the layer by plasma.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003343155A JP4248987B2 (en) | 2003-10-01 | 2003-10-01 | Method for manufacturing array substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200513990A true TW200513990A (en) | 2005-04-16 |
TWI246666B TWI246666B (en) | 2006-01-01 |
Family
ID=34537217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93116097A TWI246666B (en) | 2003-10-01 | 2004-06-03 | A method of manufacturing array substrate |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4248987B2 (en) |
TW (1) | TWI246666B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9721811B2 (en) | 2009-12-04 | 2017-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device having an oxide semiconductor layer |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012222261A (en) * | 2011-04-13 | 2012-11-12 | Mitsubishi Electric Corp | Transistor, manufacturing method of the same and display device |
MX2018010425A (en) | 2016-03-02 | 2018-11-29 | Agrimetis Llc | Methods for making l-glufosinate. |
-
2003
- 2003-10-01 JP JP2003343155A patent/JP4248987B2/en not_active Expired - Fee Related
-
2004
- 2004-06-03 TW TW93116097A patent/TWI246666B/en not_active IP Right Cessation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9721811B2 (en) | 2009-12-04 | 2017-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device having an oxide semiconductor layer |
TWI609427B (en) * | 2009-12-04 | 2017-12-21 | 半導體能源研究所股份有限公司 | Semiconductor device and manufacturing method thereof |
US10109500B2 (en) | 2009-12-04 | 2018-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10490420B2 (en) | 2009-12-04 | 2019-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10714358B2 (en) | 2009-12-04 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11456187B2 (en) | 2009-12-04 | 2022-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor-device |
US11923204B2 (en) | 2009-12-04 | 2024-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device comprising oxide semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JP4248987B2 (en) | 2009-04-02 |
JP2005109321A (en) | 2005-04-21 |
TWI246666B (en) | 2006-01-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |