TW200511145A - System and method for examining mask pattern fidelity - Google Patents
System and method for examining mask pattern fidelityInfo
- Publication number
- TW200511145A TW200511145A TW093111786A TW93111786A TW200511145A TW 200511145 A TW200511145 A TW 200511145A TW 093111786 A TW093111786 A TW 093111786A TW 93111786 A TW93111786 A TW 93111786A TW 200511145 A TW200511145 A TW 200511145A
- Authority
- TW
- Taiwan
- Prior art keywords
- mask
- file
- simulation
- files
- design
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46797703P | 2003-05-05 | 2003-05-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200511145A true TW200511145A (en) | 2005-03-16 |
TWI240217B TWI240217B (en) | 2005-09-21 |
Family
ID=37007694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093111786A TWI240217B (en) | 2003-05-05 | 2004-04-27 | System and method for examining mask pattern fidelity |
Country Status (2)
Country | Link |
---|---|
US (2) | US20040225488A1 (zh) |
TW (1) | TWI240217B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112764307A (zh) * | 2019-11-06 | 2021-05-07 | 长鑫存储技术有限公司 | 光学临近效应的修正方法 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7469057B2 (en) * | 2003-02-26 | 2008-12-23 | Taiwan Semiconductor Manufacturing Corp | System and method for inspecting errors on a wafer |
US20040225488A1 (en) * | 2003-05-05 | 2004-11-11 | Wen-Chuan Wang | System and method for examining mask pattern fidelity |
US7558419B1 (en) | 2003-08-14 | 2009-07-07 | Brion Technologies, Inc. | System and method for detecting integrated circuit pattern defects |
US7003758B2 (en) * | 2003-10-07 | 2006-02-21 | Brion Technologies, Inc. | System and method for lithography simulation |
JP4247104B2 (ja) * | 2003-12-18 | 2009-04-02 | 株式会社東芝 | パターン検証方法、パターン検証システム |
KR100982135B1 (ko) | 2005-09-09 | 2010-09-14 | 에이에스엠엘 네델란즈 비.브이. | 개별 마스크 오차 모델을 사용하는 마스크 검증 방법 및시스템 |
US7325225B2 (en) * | 2005-10-05 | 2008-01-29 | Yasushi Tanaka | Method and apparatus for reducing OPC model errors |
KR100673014B1 (ko) * | 2005-10-28 | 2007-01-24 | 삼성전자주식회사 | 포토 마스크의 제조 방법 |
JP2007142275A (ja) * | 2005-11-21 | 2007-06-07 | Toshiba Corp | フォトマスクの判定方法、半導体装置の製造方法及びプログラム |
JP2007218711A (ja) * | 2006-02-16 | 2007-08-30 | Hitachi High-Technologies Corp | 電子顕微鏡装置を用いた計測対象パターンの計測方法 |
JP2008299259A (ja) * | 2007-06-04 | 2008-12-11 | Dainippon Printing Co Ltd | フォトマスク欠陥判定方法 |
US7664614B2 (en) * | 2007-11-02 | 2010-02-16 | United Microelectronics Corp. | Method of inspecting photomask defect |
NL2003678A (en) * | 2008-12-17 | 2010-06-21 | Asml Holding Nv | Euv mask inspection system. |
NL2003658A (en) * | 2008-12-31 | 2010-07-01 | Asml Holding Nv | Euv mask inspection. |
JP4918598B2 (ja) * | 2010-01-18 | 2012-04-18 | 株式会社ニューフレアテクノロジー | 検査装置および検査方法 |
US8619236B2 (en) | 2010-11-24 | 2013-12-31 | International Business Machines Corporation | Determining lithographic set point using optical proximity correction verification simulation |
US8577489B2 (en) | 2011-01-26 | 2013-11-05 | International Business Machines Corporation | Diagnosing in-line critical dimension control adjustments using optical proximity correction verification |
US8499260B2 (en) | 2011-01-26 | 2013-07-30 | International Business Machines Corporation | Optical proximity correction verification accounting for mask deviations |
US8856705B2 (en) * | 2012-05-08 | 2014-10-07 | Freescale Semiconductor, Inc. | Mismatch verification device and methods thereof |
US8782572B1 (en) * | 2013-03-13 | 2014-07-15 | United Microelectronics Corp. | Method of optical proximity correction |
US10012599B2 (en) * | 2015-04-03 | 2018-07-03 | Kla-Tencor Corp. | Optical die to database inspection |
US9547745B1 (en) * | 2015-07-27 | 2017-01-17 | Dmo Systems Limited | System and method for discovering unknown problematic patterns in chip design layout for semiconductor manufacturing |
US9915625B2 (en) * | 2016-01-04 | 2018-03-13 | Kla-Tencor Corp. | Optical die to database inspection |
US10496780B1 (en) * | 2016-10-19 | 2019-12-03 | Mentor Graphics Corporation | Dynamic model generation for lithographic simulation |
WO2018125115A1 (en) * | 2016-12-29 | 2018-07-05 | Intel Corporation | Accounting for mask manufacturing infidelities in semiconductor devices |
US10678142B2 (en) * | 2017-11-14 | 2020-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optical proximity correction and photomasks |
US10942443B2 (en) | 2017-11-15 | 2021-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of mask data synthesis and mask making |
US10838305B2 (en) | 2018-06-29 | 2020-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithographic mask correction using volume correction techniques |
US10866506B2 (en) | 2018-10-30 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photo mask data correction method |
US11451371B2 (en) * | 2019-10-30 | 2022-09-20 | Dell Products L.P. | Data masking framework for information processing system |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6078738A (en) * | 1997-05-08 | 2000-06-20 | Lsi Logic Corporation | Comparing aerial image to SEM of photoresist or substrate pattern for masking process characterization |
US6091845A (en) * | 1998-02-24 | 2000-07-18 | Micron Technology, Inc. | Inspection technique of photomask |
US6466315B1 (en) * | 1999-09-03 | 2002-10-15 | Applied Materials, Inc. | Method and system for reticle inspection by photolithography simulation |
JP4580529B2 (ja) * | 2000-09-26 | 2010-11-17 | 大日本印刷株式会社 | 半導体回路の設計パタンデータ補正方法と、補正された設計パタンデータを用いたフォトマスク、該フォトマスクの検査方法およびフォトマスク検査用パタンデータ作製方法 |
US6670082B2 (en) * | 2001-10-09 | 2003-12-30 | Numerical Technologies, Inc. | System and method for correcting 3D effects in an alternating phase-shifting mask |
US7093226B2 (en) * | 2003-02-28 | 2006-08-15 | Synopsys, Inc. | Method and apparatus of wafer print simulation using hybrid model with mask optical images |
US20040225488A1 (en) * | 2003-05-05 | 2004-11-11 | Wen-Chuan Wang | System and method for examining mask pattern fidelity |
-
2003
- 2003-09-19 US US10/665,451 patent/US20040225488A1/en not_active Abandoned
-
2004
- 2004-04-27 TW TW093111786A patent/TWI240217B/zh not_active IP Right Cessation
-
2007
- 2007-04-13 US US11/786,978 patent/US7383530B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112764307A (zh) * | 2019-11-06 | 2021-05-07 | 长鑫存储技术有限公司 | 光学临近效应的修正方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI240217B (en) | 2005-09-21 |
US20040225488A1 (en) | 2004-11-11 |
US7383530B2 (en) | 2008-06-03 |
US20070250805A1 (en) | 2007-10-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |