TW200509408A - Nitride light-emitting device with high light-emitting efficiency - Google Patents

Nitride light-emitting device with high light-emitting efficiency

Info

Publication number
TW200509408A
TW200509408A TW092123005A TW92123005A TW200509408A TW 200509408 A TW200509408 A TW 200509408A TW 092123005 A TW092123005 A TW 092123005A TW 92123005 A TW92123005 A TW 92123005A TW 200509408 A TW200509408 A TW 200509408A
Authority
TW
Taiwan
Prior art keywords
light
emitting
emitting device
efficiency
nitride
Prior art date
Application number
TW092123005A
Other languages
English (en)
Inventor
ming-xun Xie
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW092123005A priority Critical patent/TW200509408A/zh
Priority to DE200410039870 priority patent/DE102004039870A1/de
Priority to JP2004239282A priority patent/JP2005072585A/ja
Publication of TW200509408A publication Critical patent/TW200509408A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW092123005A 2003-08-20 2003-08-20 Nitride light-emitting device with high light-emitting efficiency TW200509408A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW092123005A TW200509408A (en) 2003-08-20 2003-08-20 Nitride light-emitting device with high light-emitting efficiency
DE200410039870 DE102004039870A1 (de) 2003-08-20 2004-08-17 Licht emittierendes Element auf Nitridbasis mit hoher Effizienz
JP2004239282A JP2005072585A (ja) 2003-08-20 2004-08-19 窒化物系高効率発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092123005A TW200509408A (en) 2003-08-20 2003-08-20 Nitride light-emitting device with high light-emitting efficiency

Publications (1)

Publication Number Publication Date
TW200509408A true TW200509408A (en) 2005-03-01

Family

ID=34215105

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092123005A TW200509408A (en) 2003-08-20 2003-08-20 Nitride light-emitting device with high light-emitting efficiency

Country Status (3)

Country Link
JP (1) JP2005072585A (zh)
DE (1) DE102004039870A1 (zh)
TW (1) TW200509408A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101911317B (zh) * 2007-12-28 2012-06-06 日亚化学工业株式会社 半导体发光元件及其制造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100816841B1 (ko) 2006-08-14 2008-03-26 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
US20080042149A1 (en) 2006-08-21 2008-02-21 Samsung Electro-Mechanics Co., Ltd. Vertical nitride semiconductor light emitting diode and method of manufacturing the same
DE102007057756B4 (de) * 2007-11-30 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
KR101428052B1 (ko) 2007-12-13 2014-08-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
US8207547B2 (en) 2009-06-10 2012-06-26 Brudgelux, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
KR101020945B1 (ko) 2009-12-21 2011-03-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR101039946B1 (ko) * 2009-12-21 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
DE102017114467A1 (de) 2017-06-29 2019-01-03 Osram Opto Semiconductors Gmbh Halbleiterchip mit transparenter Stromaufweitungsschicht

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101911317B (zh) * 2007-12-28 2012-06-06 日亚化学工业株式会社 半导体发光元件及其制造方法

Also Published As

Publication number Publication date
JP2005072585A (ja) 2005-03-17
DE102004039870A1 (de) 2005-03-24

Similar Documents

Publication Publication Date Title
TW200746473A (en) Light emitting device having improved light extraction efficiency and method of making same
TW200623464A (en) High efficiency group III nitride led with lenticular surface
TW200711178A (en) Light-emitting element and manufacturing method thereof
WO2006076207A3 (en) Light emitting diodes (leds) with improved light extraction by roughening
TW200746455A (en) Group III nitride semiconductor light-emitting device
EP2362440A3 (en) Semiconductor light emitting device
WO2007067758A3 (en) High efficiency light emitting diode (led)
TW200739964A (en) Light emitting device
TW200625686A (en) Semiconductor light-emitting device
TW200501449A (en) Semiconductor light emitting device and method for manufacturing the same
WO2008079938A3 (en) Light emitting diodes (leds) with improved light extraction by roughening
EP2224467A3 (en) High power AllnGaN based multi-chip light emitting diode
TW200717863A (en) Gallium nitride-based compound semiconductor light-emitting device
WO2006041178A3 (en) Luminescent light source, method for manufacturing the same, and light-emitting apparatus
TW200509417A (en) Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
TW200604466A (en) Remote wavelength conversion in an illumination device
TW200644269A (en) Light emitting diode and method of fabricating thereof
EP2360749A3 (en) Light emitting diode, LED package and lighting system incorporating the same
WO2009014376A3 (en) Light emitting device package and method of manufacturing the same
EP1734592A3 (en) Method for manufacturing light emitting diodes
EP2369648A3 (en) Light-emitting device
WO2004075307A3 (en) Group iii nitride contact structures for light emitting devices
EP1736525A4 (en) PHOSPHORUS OXYNITRIDE AND LIGHT EMISSION DEVICE
WO2008047286A3 (en) Light emitting diode lighting device
EP1528604A3 (en) Semiconductor light emitting devices with enhanced luminous efficiency