TW200509408A - Nitride light-emitting device with high light-emitting efficiency - Google Patents
Nitride light-emitting device with high light-emitting efficiencyInfo
- Publication number
- TW200509408A TW200509408A TW092123005A TW92123005A TW200509408A TW 200509408 A TW200509408 A TW 200509408A TW 092123005 A TW092123005 A TW 092123005A TW 92123005 A TW92123005 A TW 92123005A TW 200509408 A TW200509408 A TW 200509408A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- emitting
- emitting device
- efficiency
- nitride
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 238000000605 extraction Methods 0.000 abstract 1
- 238000007788 roughening Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW092123005A TW200509408A (en) | 2003-08-20 | 2003-08-20 | Nitride light-emitting device with high light-emitting efficiency |
DE200410039870 DE102004039870A1 (de) | 2003-08-20 | 2004-08-17 | Licht emittierendes Element auf Nitridbasis mit hoher Effizienz |
JP2004239282A JP2005072585A (ja) | 2003-08-20 | 2004-08-19 | 窒化物系高効率発光素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW092123005A TW200509408A (en) | 2003-08-20 | 2003-08-20 | Nitride light-emitting device with high light-emitting efficiency |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200509408A true TW200509408A (en) | 2005-03-01 |
Family
ID=34215105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092123005A TW200509408A (en) | 2003-08-20 | 2003-08-20 | Nitride light-emitting device with high light-emitting efficiency |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2005072585A (zh) |
DE (1) | DE102004039870A1 (zh) |
TW (1) | TW200509408A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101911317B (zh) * | 2007-12-28 | 2012-06-06 | 日亚化学工业株式会社 | 半导体发光元件及其制造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100816841B1 (ko) | 2006-08-14 | 2008-03-26 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드 소자 및 그 제조방법 |
US20080042149A1 (en) | 2006-08-21 | 2008-02-21 | Samsung Electro-Mechanics Co., Ltd. | Vertical nitride semiconductor light emitting diode and method of manufacturing the same |
DE102007057756B4 (de) * | 2007-11-30 | 2022-03-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers |
KR101428052B1 (ko) | 2007-12-13 | 2014-08-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
US10147843B2 (en) | 2008-07-24 | 2018-12-04 | Lumileds Llc | Semiconductor light emitting device including a window layer and a light-directing structure |
US8207547B2 (en) | 2009-06-10 | 2012-06-26 | Brudgelux, Inc. | Thin-film LED with P and N contacts electrically isolated from the substrate |
KR101020945B1 (ko) | 2009-12-21 | 2011-03-09 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법 |
KR101039946B1 (ko) * | 2009-12-21 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법 |
DE102017114467A1 (de) | 2017-06-29 | 2019-01-03 | Osram Opto Semiconductors Gmbh | Halbleiterchip mit transparenter Stromaufweitungsschicht |
-
2003
- 2003-08-20 TW TW092123005A patent/TW200509408A/zh unknown
-
2004
- 2004-08-17 DE DE200410039870 patent/DE102004039870A1/de not_active Ceased
- 2004-08-19 JP JP2004239282A patent/JP2005072585A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101911317B (zh) * | 2007-12-28 | 2012-06-06 | 日亚化学工业株式会社 | 半导体发光元件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2005072585A (ja) | 2005-03-17 |
DE102004039870A1 (de) | 2005-03-24 |
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