TW200509133A - Alternating application of pulses on two sides of a cell - Google Patents

Alternating application of pulses on two sides of a cell

Info

Publication number
TW200509133A
TW200509133A TW093108063A TW93108063A TW200509133A TW 200509133 A TW200509133 A TW 200509133A TW 093108063 A TW093108063 A TW 093108063A TW 93108063 A TW93108063 A TW 93108063A TW 200509133 A TW200509133 A TW 200509133A
Authority
TW
Taiwan
Prior art keywords
cell
sides
pulses
alternating application
pulse
Prior art date
Application number
TW093108063A
Other languages
English (en)
Inventor
Assaf Shappir
Original Assignee
Saifun Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saifun Semiconductors Ltd filed Critical Saifun Semiconductors Ltd
Publication of TW200509133A publication Critical patent/TW200509133A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
TW093108063A 2003-03-24 2004-03-24 Alternating application of pulses on two sides of a cell TW200509133A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/394,254 US6975541B2 (en) 2003-03-24 2003-03-24 Alternating application of pulses on two sides of a cell

Publications (1)

Publication Number Publication Date
TW200509133A true TW200509133A (en) 2005-03-01

Family

ID=32824921

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093108063A TW200509133A (en) 2003-03-24 2004-03-24 Alternating application of pulses on two sides of a cell

Country Status (5)

Country Link
US (1) US6975541B2 (zh)
EP (1) EP1463062A1 (zh)
JP (1) JP2004288360A (zh)
IL (1) IL161061A0 (zh)
TW (1) TW200509133A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7139200B2 (en) * 2004-06-23 2006-11-21 Macronix International Co., Ltd. Method of identifying logical information in a programming and erasing cell by on-side reading scheme
CA2571847C (en) 2004-12-27 2014-04-08 Bce Inc. Method and system to enable submission and subsequent retrieval of enhanced voice mail messages
US7130210B2 (en) * 2005-01-13 2006-10-31 Spansion Llc Multi-level ONO flash program algorithm for threshold width control
US7447077B2 (en) * 2005-08-05 2008-11-04 Halo Lsi, Inc. Referencing scheme for trap memory
US7236404B2 (en) * 2005-08-24 2007-06-26 Macronix International Co. Ltd. Structures and methods for enhancing erase uniformity in an NROM array
US7397705B1 (en) * 2007-02-01 2008-07-08 Macronix International Co., Ltd. Method for programming multi-level cell memory array

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768165B1 (en) * 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6348711B1 (en) * 1998-05-20 2002-02-19 Saifun Semiconductors Ltd. NROM cell with self-aligned programming and erasure areas
US6215702B1 (en) * 2000-02-16 2001-04-10 Advanced Micro Devices, Inc. Method of maintaining constant erasing speeds for non-volatile memory cells
US6396741B1 (en) * 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6331951B1 (en) * 2000-11-21 2001-12-18 Advanced Micro Devices, Inc. Method and system for embedded chip erase verification
TW490675B (en) * 2000-12-22 2002-06-11 Macronix Int Co Ltd Control method of multi-stated NROM
US6614692B2 (en) * 2001-01-18 2003-09-02 Saifun Semiconductors Ltd. EEPROM array and method for operation thereof
US6307784B1 (en) * 2001-02-28 2001-10-23 Advanced Micro Devices Negative gate erase
US6456533B1 (en) * 2001-02-28 2002-09-24 Advanced Micro Devices, Inc. Higher program VT and faster programming rates based on improved erase methods
TW506123B (en) * 2001-10-24 2002-10-11 Macronix Int Co Ltd Multi-level NROM memory cell and its operating method
US6643181B2 (en) * 2001-10-24 2003-11-04 Saifun Semiconductors Ltd. Method for erasing a memory cell

Also Published As

Publication number Publication date
US20040190341A1 (en) 2004-09-30
EP1463062A1 (en) 2004-09-29
JP2004288360A (ja) 2004-10-14
IL161061A0 (en) 2009-02-11
US6975541B2 (en) 2005-12-13

Similar Documents

Publication Publication Date Title
WO2003036650A3 (en) Method for erasing a memory cell
ZA200305749B (en) Transcranial electrostimulation apparatus and method.
NO20042553L (no) Fremgangsmate for kvantenokkel-distribusjon, samt kommunikasjonsanordning
SG125143A1 (en) Nrom memory cell, memory array, related devices and methods
AU2003278899A1 (en) Non-volatile memory and method with reduced bit line crosstalk errors
SG135045A1 (en) A method for establishing a minimum sweep fall time for cells of a block of a memory device
DE60311199D1 (de) Vorrichtung und Verfahren, um einen Speicher in Selbstauffrischungsbetrieb zu schalten
WO2006113397A3 (en) System and method for providing a waveform for stimulating biological tissue
AU2003274906A8 (en) Double stranded rna structures and constructs, and methods for generating and using the same
AU2003243177A1 (en) Security maturity assessment method
AU2003265853A8 (en) Hedgehog antagonists, methods and uses related thereto
AU2003265616A1 (en) Dynamic multilevel task management method and apparatus
NO20024047D0 (no) Fremgangsmåte for kontroll og drift av en elektrolysecelle, samt celle for utövelse av fremgangsmåten
MXPA05011964A (es) Metodo y sistema de perforacion direccional continua en el fondo.
DE60335229D1 (de) Dynamische Anpassung von gestörten RF-Kanälen in einem Kommunikationssystem
WO2006009849A3 (en) Staggered memory cell array
DK2438913T3 (da) Ikke-selektiv kationkanal i neurale celler og forbindelser, der blokerer kanalen, til anvendelse i behandling af opsvulmning af hjernen
DE602004016339D1 (zh)
EP1546361A4 (en) AUTOSTIMULATING CELLS AND PROCESS FOR THEIR PRODUCTION AND USE
GB0329855D0 (en) An earth-boring bit and a method for forming a bit
EP1469473A4 (en) MODULATION DEVICE AND METHOD AND DSV CONTROL BIT PRODUCTION METHOD
WO2005074831A3 (en) Dental assembly
TW200509133A (en) Alternating application of pulses on two sides of a cell
NO20064354L (no) Fremgangsmate for bestemmelse av sympatisk tonus og system for maling derav
AP2005003444A0 (en) Method for generating pseudorandom sequence.