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Application filed by Chunghwa Picture Tubes LtdfiledCriticalChunghwa Picture Tubes Ltd
Priority to TW92121369ApriorityCriticalpatent/TWI222226B/en
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Publication of TWI222226BpublicationCriticalpatent/TWI222226B/en
Publication of TW200507274ApublicationCriticalpatent/TW200507274A/en
A manufacturing method of thin-film transistor is disclosed, which comprises: forming a gate lead structure on a substrate by a first exposing/developing/etching process; forming a source, drain and semiconductor channel by a second exposing/developing/etching process; forming an island-like transistor structure by a third exposing/developing/etching process; forming a passivation layer having a contact hole by a fourth exposing/developing/etching process; and forming a pixel electrode connected to the contact hole by a fifth exposing/developing/etching process.
TW92121369A2003-08-052003-08-05Manufacturing method of thin-film transistor
TWI222226B
(en)
Contact structure of semiconductor device, manufacturing method thereof, thin film transistor array panel including contact structure, and manufacturing method thereof