TW200504840A - Rework method of etching stop layer - Google Patents

Rework method of etching stop layer

Info

Publication number
TW200504840A
TW200504840A TW092120024A TW92120024A TW200504840A TW 200504840 A TW200504840 A TW 200504840A TW 092120024 A TW092120024 A TW 092120024A TW 92120024 A TW92120024 A TW 92120024A TW 200504840 A TW200504840 A TW 200504840A
Authority
TW
Taiwan
Prior art keywords
layer
etching stop
stop layer
amorphous silicon
patterned resist
Prior art date
Application number
TW092120024A
Other languages
English (en)
Chinese (zh)
Other versions
TWI317535B (enExample
Inventor
Shu-Yang Hsu
Ju-Hao Hung
Shih-Kuo Chang
Siegfried Chang
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW092120024A priority Critical patent/TW200504840A/zh
Publication of TW200504840A publication Critical patent/TW200504840A/zh
Application granted granted Critical
Publication of TWI317535B publication Critical patent/TWI317535B/zh

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
TW092120024A 2003-07-22 2003-07-22 Rework method of etching stop layer TW200504840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW092120024A TW200504840A (en) 2003-07-22 2003-07-22 Rework method of etching stop layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092120024A TW200504840A (en) 2003-07-22 2003-07-22 Rework method of etching stop layer

Publications (2)

Publication Number Publication Date
TW200504840A true TW200504840A (en) 2005-02-01
TWI317535B TWI317535B (enExample) 2009-11-21

Family

ID=45073384

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092120024A TW200504840A (en) 2003-07-22 2003-07-22 Rework method of etching stop layer

Country Status (1)

Country Link
TW (1) TW200504840A (enExample)

Also Published As

Publication number Publication date
TWI317535B (enExample) 2009-11-21

Similar Documents

Publication Publication Date Title
TW200614357A (en) Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
TW200723440A (en) Method for forming trench using hard mask with high selectivity and isolation method for semiconductor device using the same
CN101582374B (zh) 形成用于半导体装置的薄膜图案的方法和设备
TW200802595A (en) Method for fabricating semiconductor and eching system
TW200735210A (en) Infinitely selective photoresist mask etch
TW367602B (en) Manufacturing method for semiconductor apparatus
TW200603275A (en) Semiconductor device and fabrication method thereof
TW200615715A (en) Semiconductor processing using energized hydrogen gas and in combination with wet cleaning
WO2009057764A1 (ja) エッチング方法およびそれを用いた光／電子デバイスの製造方法
CN100463143C (zh) 具有氧化物间隔层的应变源漏cmos的集成方法
MY156411A (en) A method of cleaning the surface of a silicon substrate
WO2008020191A3 (en) Method for anisotropically plasma etching a semiconductor wafer
TW200502718A (en) Methods of removing photoresist from substrates
WO2007040587A3 (en) Method for forming a multiple layer passivation film and a deice
ATE515059T1 (de) Verfahren zur vergrösserung des gütefaktors einer induktivität in einer halbleiteranordnung
TW200711033A (en) Semiconductor devices including trench isolation structures and methods of forming the same
TW200710992A (en) Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication
TW200802989A (en) Etching method, etching mask and method for manufacturing semiconductor device using the same, semiconductor device and semiconductor laminating structure
TW200515478A (en) Method for fabricating semiconductor device with fine patterns
CN100517605C (zh) 镶嵌结构的制造方法
TWI285919B (en) Method and apparatus for manufacturing semiconductor
WO2006104819A3 (en) A method and system for removing an oxide from a substrate
TW200504840A (en) Rework method of etching stop layer
TW200741889A (en) Method of fabricating recess channel in semiconductor device
WO2008038237A3 (en) Silicide formation on a wafer

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees