TW200502982A - Structure and fabricating method of an anti-fuse memory device - Google Patents

Structure and fabricating method of an anti-fuse memory device

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Publication number
TW200502982A
TW200502982A TW092118967A TW92118967A TW200502982A TW 200502982 A TW200502982 A TW 200502982A TW 092118967 A TW092118967 A TW 092118967A TW 92118967 A TW92118967 A TW 92118967A TW 200502982 A TW200502982 A TW 200502982A
Authority
TW
Taiwan
Prior art keywords
layer
fuse
memory device
conductive layer
silicide
Prior art date
Application number
TW092118967A
Other languages
Chinese (zh)
Other versions
TWI241593B (en
Inventor
Chih-Ming Lin
Kern-Huat Ang
Chia-Chen Liu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW92118967A priority Critical patent/TWI241593B/en
Publication of TW200502982A publication Critical patent/TW200502982A/en
Application granted granted Critical
Publication of TWI241593B publication Critical patent/TWI241593B/en

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  • Semiconductor Memories (AREA)

Abstract

A method of fabricating an anti-fuse memory device. A substrate is provided with a metal film formed thereon. A silicon layer is formed on the metal film, reacting with part of the silicon layer to form a silicide layer. The unreacted silicon layer is used as a first type conductive layer, and an anti-fuse layer is formed thereon. Then, the first type conductive layer, the silicide layer and the anti-fuse layer are patterned to form word lines and a second type conductive layer is formed on the anti-fuse layer. Thus poly silicon layer formation is shortened, the silicide process is simplified and process time, cost and resistance of the conductive layer are all reduced.
TW92118967A 2003-07-11 2003-07-11 Structure and fabricating method of an anti-fuse memory device TWI241593B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92118967A TWI241593B (en) 2003-07-11 2003-07-11 Structure and fabricating method of an anti-fuse memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92118967A TWI241593B (en) 2003-07-11 2003-07-11 Structure and fabricating method of an anti-fuse memory device

Publications (2)

Publication Number Publication Date
TW200502982A true TW200502982A (en) 2005-01-16
TWI241593B TWI241593B (en) 2005-10-11

Family

ID=37013991

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92118967A TWI241593B (en) 2003-07-11 2003-07-11 Structure and fabricating method of an anti-fuse memory device

Country Status (1)

Country Link
TW (1) TWI241593B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
TWI701794B (en) * 2019-09-26 2020-08-11 南亞科技股份有限公司 Anti-fuse structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
TWI701794B (en) * 2019-09-26 2020-08-11 南亞科技股份有限公司 Anti-fuse structure

Also Published As

Publication number Publication date
TWI241593B (en) 2005-10-11

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