TW200601553A - Memory device having sheided access lines - Google Patents

Memory device having sheided access lines

Info

Publication number
TW200601553A
TW200601553A TW094115018A TW94115018A TW200601553A TW 200601553 A TW200601553 A TW 200601553A TW 094115018 A TW094115018 A TW 094115018A TW 94115018 A TW94115018 A TW 94115018A TW 200601553 A TW200601553 A TW 200601553A
Authority
TW
Taiwan
Prior art keywords
sheided
transistors
memory device
metal layer
access lines
Prior art date
Application number
TW094115018A
Other languages
Chinese (zh)
Other versions
TWI305045B (en
Inventor
Ping-Wei Wang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/007,375 external-priority patent/US20050247981A1/en
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200601553A publication Critical patent/TW200601553A/en
Application granted granted Critical
Publication of TWI305045B publication Critical patent/TWI305045B/en

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)

Abstract

An apparatus including, in one embodiment, a plurality of transistors each formed by: (1)at least a portion of one of a plurality of doped regions formed in a substrate; and (2)at least a portion of one of a plurality of first conductors each extending over one of the plurality of doped regions, the plurality of first conductors included in a first metal layer. A second metal layer includes a plurality of second conductors each interconnecting ones of the plurality of transistors. A third metal layer includes a plurality of bit lines each interconnecting ones of the plurality of transistors. A forth metal layer includes a plurality of word lines each interconnecting ones of the plurality of transistors.
TW94115018A 2004-05-10 2005-05-10 Memory device having sheided access lines TWI305045B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56965804P 2004-05-10 2004-05-10
US11/007,375 US20050247981A1 (en) 2004-05-10 2004-12-08 Memory device having shielded access lines

Publications (2)

Publication Number Publication Date
TW200601553A true TW200601553A (en) 2006-01-01
TWI305045B TWI305045B (en) 2009-01-01

Family

ID=35474103

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94115018A TWI305045B (en) 2004-05-10 2005-05-10 Memory device having sheided access lines

Country Status (3)

Country Link
JP (1) JP2005328052A (en)
SG (1) SG117524A1 (en)
TW (1) TWI305045B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090052262A1 (en) 2006-02-08 2009-02-26 Koji Nii Semiconductor memory device
JP5061490B2 (en) * 2006-04-06 2012-10-31 ソニー株式会社 Semiconductor device and manufacturing method thereof
US10497402B2 (en) 2012-03-30 2019-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for high speed ROM cells
US8743580B2 (en) 2012-03-30 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for high speed ROM cells
US9576644B2 (en) 2015-04-27 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit chip having two types of memory cells

Also Published As

Publication number Publication date
JP2005328052A (en) 2005-11-24
TWI305045B (en) 2009-01-01
SG117524A1 (en) 2005-12-29

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