TW200501230A - Method of measuring focus deviation amount of pattern exposure, and pattern exposure method - Google Patents

Method of measuring focus deviation amount of pattern exposure, and pattern exposure method

Info

Publication number
TW200501230A
TW200501230A TW093115202A TW93115202A TW200501230A TW 200501230 A TW200501230 A TW 200501230A TW 093115202 A TW093115202 A TW 093115202A TW 93115202 A TW93115202 A TW 93115202A TW 200501230 A TW200501230 A TW 200501230A
Authority
TW
Taiwan
Prior art keywords
pattern
pattern exposure
focus
edge inclination
patterns
Prior art date
Application number
TW093115202A
Other languages
Chinese (zh)
Inventor
Hirobumi Fukumoto
Naohiko Ujimaru
Kenichi Asahi
Fumio Iwamoto
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of TW200501230A publication Critical patent/TW200501230A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

On the first substrate, plural sets of the first test pattern containing the convex pattern having the determined shape composed of the photoresist films and the concave pattern corresponding to the space of the convex pattern shape are formed under the condition of having different focus values during the exposure. The edge inclination amount of plural first test patterns is then measured. Based on the correspondences (7) and (14) between the edge incline amount and the focus value, the focus interdependence (17) of the edge inclination amount is obtained. On the second substrate, the second test pattern containing the convex pattern and the concave pattern is formed, and the edge inclination amount of the second test pattern is measured. According to the focus value interdependence of the edge inclination value, the deviation amount of the distance of the best focus for exposure of the second test pattern is calculated from the edge inclination amount of the second test pattern. The spatial dimensions for convex patterns and concave patterns are set differently so that best focus values when respective patterns are exposed are close to one another.
TW093115202A 2003-05-29 2004-05-28 Method of measuring focus deviation amount of pattern exposure, and pattern exposure method TW200501230A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003153019 2003-05-29
JP2003346831A JP4244771B2 (en) 2003-05-29 2003-10-06 Method for measuring focus deviation and exposure method

Publications (1)

Publication Number Publication Date
TW200501230A true TW200501230A (en) 2005-01-01

Family

ID=33554374

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093115202A TW200501230A (en) 2003-05-29 2004-05-28 Method of measuring focus deviation amount of pattern exposure, and pattern exposure method

Country Status (6)

Country Link
US (1) US7474382B2 (en)
JP (1) JP4244771B2 (en)
KR (1) KR20060014430A (en)
CN (1) CN100426461C (en)
TW (1) TW200501230A (en)
WO (1) WO2005001912A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4588368B2 (en) * 2004-06-15 2010-12-01 富士通セミコンダクター株式会社 Exposure measurement method and apparatus, and semiconductor device manufacturing method
US7968258B2 (en) * 2005-05-16 2011-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for photolithography in semiconductor manufacturing
JP2008053413A (en) * 2006-08-24 2008-03-06 Oki Electric Ind Co Ltd Focal deviation measuring method, and focal alignment method
CN101446767B (en) * 2007-11-27 2010-12-15 上海华虹Nec电子有限公司 Method for measuring focus offsets of exposure tool
JP2009187967A (en) * 2008-02-01 2009-08-20 Panasonic Corp Focus measurement method and method of manufacturing semiconductor device
JP2010128279A (en) * 2008-11-28 2010-06-10 Toshiba Corp Pattern forming method and pattern verification program
CN102495533B (en) * 2011-11-24 2015-08-26 上海华虹宏力半导体制造有限公司 Detect the method and system of exposure sources focal position
CN105527072B (en) * 2014-09-30 2018-12-25 南京理工大学 A method of the in-orbit focal length of remote sensor is obtained based on remote sensing images
US20180024448A1 (en) * 2016-07-19 2018-01-25 Applied Materials, Inc. Focus centering method for digital lithography
CN109598773A (en) * 2018-12-05 2019-04-09 麒麟合盛网络技术股份有限公司 A kind of method and apparatus handling static figure layer
JP7238672B2 (en) * 2019-07-25 2023-03-14 株式会社ニューフレアテクノロジー Multi-beam writing method and multi-beam writing apparatus
CN113257704B (en) * 2021-06-17 2021-10-19 绍兴中芯集成电路制造股份有限公司 Overlay precision detection method and detection structure thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62122125A (en) 1985-10-30 1987-06-03 Hitachi Ltd Control method for line width
JPH07107901B2 (en) 1987-04-20 1995-11-15 日本電気株式会社 Tape forming method by reduction projection exposure method
JP2712330B2 (en) * 1988-07-20 1998-02-10 株式会社ニコン Exposure condition measurement method
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JP3287017B2 (en) 1992-07-10 2002-05-27 株式会社ニコン Measurement method of imaging characteristics
KR0157279B1 (en) * 1994-03-15 1999-05-01 모리시타 요이찌 Exposure apparatus for transferring a mask pattern onto a substrate
JPH0883753A (en) * 1994-09-13 1996-03-26 Nikon Corp Focal point detecting method
JPH10154647A (en) * 1996-11-22 1998-06-09 Matsushita Electron Corp Pattern forming anomalies detecting method
JP4018309B2 (en) 2000-02-14 2007-12-05 松下電器産業株式会社 Circuit parameter extraction method, semiconductor integrated circuit design method and apparatus
JP3997066B2 (en) * 2001-08-20 2007-10-24 株式会社日立製作所 Process variation monitoring system and method using electron beam
JP3839306B2 (en) * 2001-11-08 2006-11-01 株式会社ルネサステクノロジ Semiconductor device manufacturing method and manufacturing system

Also Published As

Publication number Publication date
CN1799122A (en) 2006-07-05
US7474382B2 (en) 2009-01-06
US20060285098A1 (en) 2006-12-21
JP4244771B2 (en) 2009-03-25
WO2005001912A1 (en) 2005-01-06
CN100426461C (en) 2008-10-15
JP2005012158A (en) 2005-01-13
KR20060014430A (en) 2006-02-15

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