TW200426253A - Electrochemically fabricated structures having dielectric or active bases and methods of and apparatus for producing such structures - Google Patents

Electrochemically fabricated structures having dielectric or active bases and methods of and apparatus for producing such structures Download PDF

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TW200426253A
TW200426253A TW93112898A TW93112898A TW200426253A TW 200426253 A TW200426253 A TW 200426253A TW 93112898 A TW93112898 A TW 93112898A TW 93112898 A TW93112898 A TW 93112898A TW 200426253 A TW200426253 A TW 200426253A
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substrate
layer
cover
layers
temporary
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TW93112898A
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Chinese (zh)
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TWI244512B (en
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Jeffrey A Thompson
Adam L Cohen
Michael S Lockard
Dennis R Smalley
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Microfabrica Inc
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Priority claimed from US10/434,493 external-priority patent/US7250101B2/en
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Publication of TWI244512B publication Critical patent/TWI244512B/en

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Abstract

Multilayer structures are electrochemically fabricated on a temporary (e.g. conductive) substrate and are thereafter bonded to a permanent (e.g. dielectric, patterned, multi-material, or otherwise functional) substrate and removed from the temporary substrate. In some embodiments, the structures are formed from top layer to bottom layer, such that the bottom layer of the structure becomes adhered to the permanent substrate, while in other embodiments the structures are formed from bottom layer to top layer and then a double substrate swap occurs. The permanent substrate may be a solid that is bonded (e.g. by an adhesive) to the layered structure or it may start out as a flowable material that is solidified adjacent to or partially surrounding a portion of the structure with bonding occurring during solidification. The multilayer structure may be released from a sacrificial material prior to attaching the permanent substrate or it may be released after attachment.

Description

200426253 玫、發明說明: 【發明所屬之技術領域】 相關申請案 本案要請求2003年5月7日申請之No.10/434493美國專 5利申請案的權益,該申請案的内容併此附送。 發明領域 本發明之某些態樣的不同實施例概有關於電化學製造 領域’及經由逐層構建沈積材料來製造三維結構(例如部 件、物脰、構件、裝置)的技術,並有關在完成料層製造之 10後再處理該等結構以使其由一構建基材(即暫時基材)移轉 至一結構性基材的方法。 I:先前技術3 發明背景 一種由多數黏接層來製成三維結構(例如部件、構件、 15 裝置等等)的技術曾被Adam L. Cohen所發明,而被稱為電 化學製造。其正由 California,Burbank.的 MicrofabricaTM 公司 (前為MEMGenR公司)以EFABR之名稱來商業化實施。此技 術曾揭露於2000年2月22日所頒發的No.6027630美國專利 中。該電化學沈積技術能利用獨特的罩覆技術來選擇性地 20 沈積材料,其包括使用一罩體,該罩體含有可撓變順形的 材料設在一支撐結構上,該支撐結構係獨立於要被鍍佈的 基材。當欲使用該罩體來進行電沈積時,該罩體之可順利 部份會在有電鍍溶液的情況下與一基材接觸,而該接觸會 抑制所擇部位的沈積。為方便起見,該等罩體乃被概稱為 200426253 可順形接觸罩,而該罩鑛技術則概稱為可順形接觸罩鍛佈 法。尤其是,基於California,Burbank的MicrofabricaTM公司 (前為MEMGenR公司)之名,故該罩體已被習稱為instant MASKS TM而該製法則習稱為INSTANT MASKING或 5 INSTANT MASKtm鍍佈法。利用可順形接觸罩鍍佈法之選 擇性沈積能夠用來製造單一材料層或多層結構。該 Ν〇·6027630美國專利的内容併此提供參考。由於本申請案 係有關於上述專利案,故將各種已公開之有關可順形接觸 罩鍍佈法(即INSTANT MASKING)與電化學製造的資料開 10 列如下: (1) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis 及P. Will 等人之 “EFAB : Batch production of functional, fully-dense metal parts with micro-scale features”,Proc. 9th200426253 Description of invention: [Technical field to which the invention belongs] Related Application This application is to claim the benefit of US Patent Application No. 10/434493, filed on May 7, 2003. The contents of this application are hereby attached. FIELD OF THE INVENTION Different embodiments of certain aspects of the present invention are related to the field of electrochemical manufacturing 'and the technology of manufacturing three-dimensional structures (eg, parts, objects, components, devices) by constructing deposited materials layer by layer, and related to the completion of A method of processing the structures after a layer is manufactured 10 to transfer them from a construction substrate (ie, a temporary substrate) to a structural substrate. I: Prior Art 3 Background of the Invention A technique for making three-dimensional structures (such as parts, components, 15 devices, etc.) from most adhesive layers was invented by Adam L. Cohen and is called electro-chemical manufacturing. It is being implemented commercially under the name EFABR by MicrofabricaTM (formerly MEMGenR) of Burbank, California. This technique was disclosed in US Patent No. 6027630, issued on February 22, 2000. The electrochemical deposition technology can selectively deposit materials using a unique cover technology, which includes the use of a cover that contains a flexible and deformable material and is provided on a support structure, which is independent of the support structure. For the substrate to be plated. When the cover is to be used for electrodeposition, the smooth part of the cover will be in contact with a substrate in the presence of a plating solution, and the contact will inhibit the deposition of a selected part. For convenience, these hoods are generally referred to as 200426253 conformable contact hoods, and the hood mining technology is referred to as conformable contact hood forging. In particular, based on the name of MicrofabricaTM (formerly MEMGenR) of Burbank, California, the cover has been customarily called instant MASKS TM and the manufacturing method is customarily called INSTANT MASKING or 5 INSTANT MASKtm. Selective deposition using conformable contact mask plating can be used to make single material layers or multilayer structures. The contents of the US Patent No. 6027630 are incorporated herein by reference. Since this application is related to the above-mentioned patents, the published data on the conformable contact cover plating method (ie, INSTANT MASKING) and electrochemical manufacturing are listed as follows: (1) A. Cohen, G Zhang, F. Tseng, F. Mansfeld, U. Frodis, and P. Will, etc., "EFAB: Batch production of functional, fully-dense metal parts with micro-scale features", Proc. 9th

Solid Freeform Fabrication, The University of Texas at 15 Austin, pl61,Aug. 1998。 (2) Α· Cohen,G. Zhang,F. Tseng,F. Mansfeld,U. Frodis 及 P. Will 等人之 “EFAB : Rapid,Low-Cost Desktop Micromachining of High Aspect Ratio True 3-D MEMs’’, Proc. 12th IEEE Micro Electro Mechanical Systems 20 Workshop, IEEE, p244, Jan. 1999。 (3) Α· Cohen之“3-D Micromachining by Electrochemical Fabrication”,Micromachine Devices,March 1999。 (4) G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld, 及P. Will,等人之“EFAB : Rapid Desktop Manufacturing of 6 200426253Solid Freeform Fabrication, The University of Texas at 15 Austin, pl61, Aug. 1998. (2) "EFAB: Rapid, Low-Cost Desktop Micromachining of High Aspect Ratio True 3-D MEMs" by A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis, and P. Will et al. , Proc. 12th IEEE Micro Electro Mechanical Systems 20 Workshop, IEEE, p244, Jan. 1999. (3) A. Cohen's "3-D Micromachining by Electrochemical Fabrication", Micromachine Devices, March 1999. (4) G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld, and P. Will, et al. "EFAB: Rapid Desktop Manufacturing of 6 200426253"

True 3-D Microstructures”, Proc. 2nd International Conference on Integrated MicroNanotechnology for Space Applications,The Aerospace Co.,Apr. 1999 oTrue 3-D Microstructures ", Proc. 2nd International Conference on Integrated MicroNanotechnology for Space Applications, The Aerospace Co., Apr. 1999 o

(5) F· Tseng,U· Frodis,G· Zhang,A. Cohen,F· Mansfeld, 5 及P. Will等人之“EFAB ·· High Aspect Ratio,Arbitrary 3-D(5) F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld, 5 and P. Will, etc., "EFAB ·· High Aspect Ratio, Arbitrary 3-D

Metal Microstructures using a Low-Cost Automated Batch Process’’,3rd International Workshop on High Aspect Ratio MicroStructure Technology (HARMST’99),June 1999 o (6) A. Cohen, U. Frodis, F. Tseng, G. Zhang, F. Mansfeld, 10 及 P. Will 等人之 “EFAB : Low-Cost, AutomatedMetal Microstructures using a Low-Cost Automated Batch Process '', 3rd International Workshop on High Aspect Ratio MicroStructure Technology (HARMST'99), June 1999 o (6) A. Cohen, U. Frodis, F. Tseng, G. Zhang, "EFAB: Low-Cost, Automated" by F. Mansfeld, 10 and P. Will, et al.

Electrochemical Batch Fabrication of Arbitrary 3-D Microstructures55, Micromaching and Microfabrication Process Technology, SPIE 1999 Symposium on Micromaching and Microfabrication,September 1999 o 15 (7)F. Tseng,G. Zhang,U. Frodis,A. Cohen,F. Mansfeld, 及P· Will等人之“EFAB : High Aspect Ratio, Arbitrary 3-D Metal Microstructures using a Low-Cost Automated Batch Process”,MEMS Symposium,ASME 1999 International Mechanical Engineering Congress and Exposition,November, 20 1999 。 (8) A. Cohen,“Electrochemical Fabrication (EFABTM)”, Chapter 19 of The MEMS Handbook, edited by Mohamed Gad-EL-Hak5 CRC Press,2002。 (9) “MiciOfabi.ication-Rapid Prototyping’s Killer Application”, 7 200426253 page 1~5 of the Rapid Prototyping Rep〇rt? CAD/CAM Publishing,Inc·,JUne 】999。 以上九種公開資料的内容併此附送提供參考。 該電化學沈積法係能以多如上述專利及公開資料中所 述的方式來實施。在—種方式中’該製法在形成所要製造 之結構的各層時會進行三個分開的操作·· 1·藉電沈積來選雜地沈積至少―材料於—基材的一 或多個所需區域上。 』2.然後,藉電沈積來覆面沈積至少—添加材料,而使 =添加材料覆蓋切己被選擇性沈積的區域及該基材上先 別未被選擇性沈積的區域。 15 •取俊,將弟1和第2操作中所沈積的材料平括化,來 ^成-適當厚度之第—層平滑表面,其具有至少—區域含 料錢少—材料,及至少-區域含有至少該至少-添加材 在第-層製成後’-或多數的添加層可被鄰設於前一 i亚“接於前一層的平滑 ^ # $ 上艳些添加層係藉重複第1 主弟3知作一或多次而來製 /、中σ後續層的製造會將 二成晋和原始基材當作―新的加厚基材。 當所有各層的製造完成之後, 少一#、 至)一被沈積材料的至 而曝露或釋出所要製 刀會被以一 |虫刻製程來除去 造的3D結構 的較佳方法係為可順形 有一或多數的可順形接 在第1操作中進行選擇性沈積 接觸罩鍍佈法。於此種鍍佈法中, 20 200426253 觸(CC)罩會首先被製成。該CC罩包含一支撐結構,其上黏 接或設有一圖案化的可順形介電材料。每一罩體之可順形 材料皆會依據所要鍍著材料的特定截面來被成形。所要鍍 著之每一特定截面圖案皆需要至少一CC罩。 5 一 CC罩的支撐物典型為一金屬所製成的板狀結構,其 會被選擇性地電鍍,而要被鍍佈的材料會由其溶出。於此 典型的方法中,該支撐物將會形如一電鍍製程中的陽極。 另在一變化方法中,該支撐物則可為一多孔或穿孔的材 料,於一電鍍操作中欲沈積材料將會通過該等穿孔而由遠 10 處的陽極移至一沈積表面上。於上述任一例中,CC罩皆可 共用一共同支撐物,即用來鍍著多層材料之可順形介電材 料的圖案,係可設於單一支撐結構的不同區域中。當單一 支撐結構包含多個鍍佈圖案時,該整個結構會被視為一CC 罩,而個別的鍍佈罩則可被視為一“次罩”。在本申請案中, 15 此種區別只在當要製成一特定點時才有分別。 在準備進行第一操作的選擇性沈積時,該CC罩的可順 形部份會被對準壓抵於該基材(或前一形成層或者一層的 先前沈積部份)上之所要沈積的選擇部份上。該CC罩與基材 係以一種方法來壓抵在一起,而使該CC罩之可順形部份中 20 的所有開孔内皆會含納電鍍溶液。該CC罩接觸該基材的可 順形材料會形成電沈積的阻障,而在CC罩中的開孔内會填 滿電鍍溶液,故當供入一適當的電壓及/或電流時,即會形 成可將材料由一陽極(例該CC罩支撐物)移轉至該基材之來 接觸部份(在電鍍操作時會形成陰極)的通路。 9 200426253 一 CC罩及CC罩鍍佈法之例被示於第1(a)〜1(c)圖中。 第1(a)圖示出一CC罩8的側視圖,其係由圖案化於陽極12上 的可順形或可撓變(例如彈性的)絕緣體10所構成。該陽極具 有兩種功能。第1(a)圖亦示出一基材6與該罩體8分開。該陽 5 極之一功能係作為該圖案化絕緣體10的支撐材料以保持其 整體性和排列對準,因為該圖案的廓形可能非常複雜(例如 含有許多絕緣材料的隔離“島”)。其另一功能係作為該電鍍 操作的陽極。CC罩鍍佈法會選擇性地沈積材料22於一基材 6上,其係簡單地將該絕緣體壓抵於基材上,然後經由該絕 10 緣體中的孔隙26a,26b等來電沈積材料,如第1 (b)圖所示。 在沈積後,該CC罩會與該基材6分開(最好係非解體地),如 第1(c)圖所示。該CC罩鍍佈法與一“穿孔罩”鍍佈法之區別 在於,該穿孔罩鍍佈法的罩蔽材料與該基材分離時將會發 生解體。如同穿孔罩鍍佈法,該CC罩鍍佈法亦會選擇性地 15 將材料同時地沈積在整個料層上。其鍍佈區域可由一或多 個隔離的鍍佈區所構成,該等隔離的鍍佈區可屬於所要製 造之一單獨結構,或屬於要被同時製成的多個結構。在CC 罩鍍佈法中,因個別的罩體並不會被刻意地破壞,故它們 能在多個鍍佈操作中一再重複使用。 20 另一種CC罩與CC罩鍍佈法之例係被示於第1(d)〜1(f) 圖中。第(d)圖示出一陽極12’會與一罩體8’分開,該罩體包 含一圖案化的可順形材料10’及一支撐結構20。第(d)圖亦示 出該基材6與該罩體8’分開。第1(e)圖示出該罩體8’係被設 成與該基材6接觸。第1(f)圖示出該沈積物22’,其係將一電 10 200426253 流由陽極ir導至該基材6所造成者。第1(g)圖示出該沈積物 22在與罩體8’分離後仍留在該基材6上。於本例中,一適當 的%解液會置於έ亥基材6與陽極12 ’之間,而一來自該溶液 及/或陽極的離子流將會經由該罩體的開孔被導至基材上 所要沈積材料之處。此類型的罩體可稱為無陽極式 INSTANT MASK (AIM)或無陽極可順形接觸(ACC)罩。 ίο 不同於穿孔罩鍍佈法,該cc罩鐘佈法能容許cc罩與所 要鑛佈之基材完全分開地來製造(例如肖一所要形成的沁 結構分開地«造KC罩可用許多方法來製成,例如,可 用光微影法。所有的罩體皆可在該結構製造之前而非在並 製造期間來統合地同時製成。此分開製造可形成一簡單 低成本、自動化 比門。P钇淨的“桌上工廠”,》 好結構’而僅留下任何需要為 塵至的製程,例如光微影法另由特定部門來完成。 15 前述電化學製造法之一例係被示於第2⑷〜2⑴时 該等圖式示出該製法包括—第—材料2(犧牲材料)及一第_ 材料4(結構材料)的沈積。在此例中,該⑺㈣包含一圖= 化的可順形材料1G (例如-彈性介電材料)及—由沈積材料 所製成的支撐物12。該CC罩之可順形部份係壓抵於基材 上’並有-電麟液14位於該可順形材料_開孔_ -來自電源18的流會經由⑷兼作為陽極的切㈣及〇 兼作為陰_基材㈣财魏溶液。第2_表示電流自 通過會造成電鍍溶液中的材料2,且該材料2會由陽二^ 擇性地移轉而鍍著在陰極6上。在使用CC^將第—沈積j 20 200426253 料2電鍍於基材6上之後,該CC罩8即會被除去,如第2(b) 圖所示。第2(c)圖示出該第二沈積材料4已被覆面沈積(即非 選擇性沈積)在先前沈積的第一沈積材料2上以及今美材6 的其餘部份上。由该苐二材料構成之陽極(未示出)因電穿所 5產生的覆面沈積物將會通過一適當的電鍍溶液(未示出)來 移轉至該陰極/基材6上。該雙材料層嗣會被整體平+曰化來 達到精確的厚度和平坦度,如第2(d)圖所示。在為所有夂展 完成此程序之後,由弟二材料4(即結構材料)所形成的多厚 結構20會被埋在第一材料2(即犧牲材料)中,如第2(匀囷所 10示。該埋入結構將會被蝕掉而形成所需裝置,即結構2〇, 如第2(f)圖所示。 15 20 .举例的人工電化學製造系統32之各種構件乃被示 第3(a)〜3(c)圖中。該系統32係由數個次系統34 , %,%, 40等所組成。該基材固持次系統34係示於第3(幻至3(幻圖的 上部,而包含數個構件:⑴-載具48,(2)一金屬基材6其 上會被沈積料層’及(3)-線性滑塊42能夠回應來自致動器 44的驅動力而相對於該載具48上下移動該基材6。該次系: 34亦包含-指示器46可測量該基材之垂向位置的變異^ 可用來設定料層厚度及/或沈積厚度。該n统亦 包含載具48的支腳68,可被精讀地固裝在次系統%上。μ 該CC罩次系統36係被示於第3⑷圖的下部,而包人數 個構件:⑴―CC罩8其實際上係由共用—共同切姆極 i2的多個CC罩(即次罩體)所組成,⑺精密秘54,⑺精密 丫枱56’⑷框架72其上可固裝次系統34的支腳68,及(;)二 12 200426253 槽58可容裝電解液16。該次系統34和36亦含有適當的電接 點(未示出)可連接於一適當的電源來驅動該CC罩鍍製程。 該覆面沈積次系統38係示於第3(b)圖的下部,而包含數 個構件:(1)一陽極62,(2) —電解槽64可供容裝電鍍溶液 5 66,及框架74其上可置設次系統34的支腳68。該次系統38 亦包含有適當的電接點(未示出)可將陽極連接於一適當的 電源以供驅動該覆面沈積製程。 該平坦化次系統40係示於第3(c)圖的下部,而包含一拋 光板52及附設的作動和控制系統(未示出)以供平坦化沈積 10 物。 除了上述内容之外,該No.6027630美國專利顯示該電 鍍方法亦能與絕緣材料結合使用。尤其是其顯示雖所揭的 電鍍實施例係使用兩種金屬,但有多種材料諸如聚合物、 陶瓷及半導體材料,及任何數目的金屬等,皆可藉前述的 15 電鍍法,或在整個電鍍製法中所發生的個別程序中來被沈 積。其顯示一薄電鍍座可例如藉濺射來沈積在一不充分導 電的沈積物(例如一絕緣層)上,俾供進行後續的電鍍。其亦 顯示多種支撐材料(即犧牲材料)亦可被包含於電鍍元素 中,而可選擇地除去該等支撐材料。 20 由電鍍金屬來製造微結構的另一種方法(即使用電化 學製造技術)係被揭於Henry Guckel的No.5190637美國專利 中,其名稱為“以多等級深X光微影法及犧牲金屬層來製造 微結構的方法”。此專利揭示利用阻罩曝光來製造金屬結構 的方法。一第一層主金屬會被電鍍在一曝露的電鍍座上來 13 200426253 填滿一光阻中的空隙,該光阻嗣會被除去,且一第二金屬 會被電鍍在該第一層與電鍍座上。該第二金屬的曝露表面 嗣會被加工磨低至一高度一而曝現第一金屬來形成一平坦 均勻的表面延伸通過該第一和第二金屬。然後一第二層的 5 形成可藉佈設一光阻層於該第一層上,並重複用來製造第 一層的製程而來完成。該製程會一再重複直到整個結構形 成,且該第二金屬被蝕刻除去為止。該光阻可藉鑄造來成 形於該電鍍座或前一層上,且該光阻中的空隙得以X光或 UV輻射經由一圖案化罩曝光該光阻而來形成。 10 在該領域中仍需要加強EFAB製程中的導電材料、介電 材料、半導性材料、其它材料、受處理材料、及/或結構材 料等之可結合性。又,在該領域中亦有需要來結合電化學 製造的結構與介電基底或基材,活性基底或基材(具有能與 該結構交互作用之元素的基底或基材),或是具有可作為該 15 結構之基底以外的目的者),及/或含有造型結構的基底或基 材等。在該領域中亦有需要改善該等基底或基材與電化學 製造結構之間的黏固。又在該領域中亦需要擴展能力範圍 以擴張可用來製成所需結構(包括它們的基底或基材)的材 料和製法的範圍。 20 【發明内容】 發明概要 本發明的各種態樣之一目的係為增進電化學製造技術 來擴張電化學製造法的能力,以滿足不同用途之結構性與 功能性需求’並得擴展該技術的潛在用途。 14 200426253 本發明之各種態樣的其它目的和優點等,將可在專業 人士參閱所述内容後更清楚瞭解。本發明的種態樣,不論 是於此所述者或能由所述内容推知者,皆可單獨或組合來 達成上述之任一目的;或者其可能不能達成上述之任何目 5 的,但其卻能達成由所述内容中來推知的某些其它目的。 並非所有該等目的皆能由本發明之任何單一態樣來達成, 雖然單一目的可能相關於某些態樣。 本發明的第一態樣係提供一種由多數黏接層來製成一 3D結構的電化學製造方法,包含(A)選擇性沈積一料層的至 10 少一部份於一暫時基材上,該暫時基材可包括先前沈積的 材料;(B)製造多數料層且使後續層緊鄰並黏接於先前沈積 層,而該製造包括重複操作(A)多數次;(C)在製成多數層之 後,將一含有一介電材料的結構基材固接於該結構之一層 的至少一部份,並由該結構除去該暫時基材的至少一部份。 15 本發明的第二態樣係提供一種由多數黏接層來製成一 3D結構的電化學製造裝置,包含:(A)—裝置可選擇性地沈 積至少一料層的至少一部份於一暫時基材上,該暫時基材 可包括先前沈積的材料;及(B) —裝置可製造多數料層,而 使後續層緊鄰並黏接於先前沈積層,其中該製造包括重複 20 操作(A)多數次;(C)一裝置可將一含有一介電材料的結構基 材固接於該結構之一層的至少一部份,並由該結構除去該 暫時基材的至少一部份;及(D)—電腦可程式化來控制接觸 裝置,傳導裝置,分離裝置,固接裝置等,而使該固接裝 置能在該結構的多數層形成之後來操作。 15 200426253 本發明的第三態樣係提供一種由多數黏接層來製成一 3D結構的電化學製造方法,包含:(A)選擇性沈積一料層的 至少一部份於一第一暫時基材上,該第一暫時基材可包括 先前沈積材料;及(B)製造多數層而使後續層緊鄰並黏接於 5 先前沈積層;及(C)在製成多數層之後固接一第二暫時基材 (其包括一介電材料)於該結構之一層的至少一部份,並由該 結構除去第一暫時基材的至少一部份,然後固接一結構基 材於該結構之一層的至少一部份,其至少會部份疊覆第一 暫時基材曾固接的位置。 10 本發明的第四態樣係提供一種由多數黏接層來製成一 3D結構的電化學製造方法,包含:(A)選擇性沈積一料層的 至少一部份於一犧牲基材上,該暫時基材可包括先前沈積 的材料;(B)製造多數層而使各後續層緊鄰並黏接於先前沈 積層;其中該製造包括重複操作(A)多數次;(C)在製成多數 15 層之後將一結構基材(包括多數材料及/或一圖案化結構)固 接於該結構之一層的至少一部份,並由該結構除去該暫時 基材的至少一部份。 本發明的第五態樣係提供一種由多數黏接層來製成一 3D結構的電化學製造方法,包含:(A)選擇性沈積一料層的 20 至少一部份於一第一暫時基材上,該第一暫時基材可包括 先前沈積的材料;(B)製造多數層而使後續層緊鄰並黏接於 先前沈積層;及(C)在製成多數層之後,將一第二暫時基材 (其包括多數材料及/或一圖案化結構)固接於該結構之一層 的至少一部份,並由該結構除去第一暫時基材的至少一部 16 200426253 伤’然後將一結構基#固接於該結構之〜 ㈢的至少一邱 伤,其至少會部份疊覆第一暫時基材曾固接的仇 " 本發明的第六態樣係提供一種用來製批 々、 _ 夕部段3 Π έ士 構的電化學製造方法,其中至少有一部段 … %制4、 /Λ ’了、由多數黏接層 所W成,該方法包含:(Α)製成該多部段結 、°稱的至少一邻 丰又,包括:(1)選擇性地沈積一層的至少—部份於 該基材可包括先前沈積的材料;(2)製造多封a 基材上, 、, 要文層而使後声; 緊鄰並黏接於先前沈積層,其中該製造包, '貝曰 ^ 枯重複操作(1)多 數次,(Β)提供該多部段結構之至少一添加部# · ίο 15 /Κ 又’(C)將該至 ν —部段固接於該至少一添加部段來形成該多部俨、社 本發明的更多態樣將可在專業人士參閱所搗内容之後 更清楚瞭解。本發明的其它態樣可包括上述本發明之夂二 樣的組合,及/或加上一或多個實施例的各種特徵。本發明 之其它態樣可包括用來貫施一或多種上述發明方、去的果 置。本發明之這些其它態樣可提供上述各種態、 心水日口不同組 合,以及提供未被具體說明於上的其它構造、結構、功〜 關係和製法等等。 圖式簡單說明 第1(a)〜1(c)圖概略地示出一 CC罩鍍佈法之不同階段 20 的側視圖;而第1(d)〜US)圖係概略地示出一使用不同領型 之CC罩的鍍佈法之不同階段的側視圖。 第2(a)〜2(f)圖概略地示出一用來形成一特定結構的電 化學製造方法之不同階段的側視圖,其中有一犧牲材料會 被選擇性沈積,而一結構材料會被覆面沈積。 17 第3(a)〜3(c)圖概略示出可用來人工實施第2(a)〜2(〇 圖中之電化學製法的各種次組合例之側視圖。 第4(a)〜4(i)圖概略示出使用黏接罩鍍佈法來製成一結 構的苐一層,其中一第二材料的覆面沈積會覆蓋第一材料 5在各沈積位置之間的開孔以及第一材料本身。 第5圖示出本發明一較佳實施例之基本操作的流程圖。 第6(a)〜6(c)圖示出一依據本發明的較佳實施例來造 成的結構例,其中第6(a)&6(b)圖示出該結構之二不同的立 體圖,而第6(c)圖示出該結構的側視圖。 1〇 第7(a)〜7(〇)圖示出依本發明之一較佳實施例由多數 黏接層來製成第6(a)〜6(c)圖之結構的各程序。 第8(a)〜8(d)圖tf出製成第咖〜6⑷圖之結構的最末 層之一變化例,及該永久基材如何配接該料層。 第9(a)〜9(e)圖示出當實施本發明之一實施例時的各 15 步驟。 第1〇圖提供第9⑷〜9⑷圖的實施例之基本操作的流 程圖。 第11(a)〜11⑴圖示出當實施本發明之一實施例時所進 行的各操作步驟。 20 ⑴2®提供本發明另—實施例之基本操作的流程圖。 第13(a)〜13(c)圖概略示出將一結構7〇2由一第一基材 704轉接於一第二基材7〇6的過程。 第13(d)〜13(e)圖概略示出具有可加強固接之修正構 造的結構與基材之側視圖。 18 200426253 第M(a)〜M(c)圖概略示出一製法可修正一結構之一 固接層的構造使其含有第13(d)圖所示的凹槽。 第15(a)〜15(f)圖概略示出一製法可修正一結構之一固 接層的構造使其含有扣接凹槽以加強該結構與基材的互 5 接。 I:實施方式3 較佳實施例之詳細說明 第1(a)〜1(g) ’ 2⑻〜2(f) ’ 3⑷〜3(c)圖乃示出一種習 知之電化學製法的不同特徵。其它的電化學製造技術係被 1〇揭於上述之Ν〇·6〇2763〇美國專利案,各先前公開資料,及 所附送之各其它專利和專利申請案中,亦有其它可由該等 公開資料、專利、及專利申請案等所述的各種方法來級人 射,或者專業人士可由本案所揭内容來推知者。所有: 等技術皆能與於此所揭之本發明各種態樣的不同實施例來 15結合以產生更佳的實施例。亦有其它實施例可由在此所揭 之各種實施例的組合來衍生形成。 ^弟4⑷〜4⑴圖示出於一多層製法中製成單—層之各階 段’其中有一第二金屬會沈積在一第-金屬上及該第—金 屬的開孔内,而其沈積物會形成該層的一部份。在第 2〇圖中’、乃示出一基材82的側視圖,其上有可圖案化光阻84 會被成形如第4(b)圖所示。在第4(c)圖中,一光阻圖案係由 固化、曝光、顯影該光阻而來形成。該光隨的圖案化合 造成開孔或师2(a)〜92(e)f由該光阻的表㈣穿駐 厚度而延伸至基材82的表面88。在第4⑷圖中,—金屬㈣ 19 200426253 鎳)已被電鍍於該等開孔92(a)〜92(c)内。在第4(e)圖中,該 光阻已被由基材上除去(例化學剝除),而曝露出該基材82 上未被第一金屬94覆蓋的區域。在第4(f)圖中,一第二金屬 96(例如銀)已被電鍍覆蓋在該基材82(其係可導電的)之整 5 個曝露部份與第一金屬94(亦可導電)上。第4(g)圖示出已完 成該結構的第一層,其係將第一和第二金屬平坦化磨低至 一高度以曝露第一金屬並設定第一層的厚度而來製成者。 在第4(h)圖中係重複第4(b)〜4(g)圖中的步驟多數次來製成 一所示的多層結構,其中每一層皆含有兩種材料。針對大 10 部份的用途,該兩種材料之一者將會被除掉如第4(i)圖所 示,來形成一所需的3D結構98(例如構件或裝置)。 雖所揭各實施例主要係集中於可順形接觸罩和罩鍍操 作,但所揭之各種實施例、變化例、及技術等亦可應用於 近設罩體與罩鍍操作(即使用該等罩體的操作,該等罩體會 15 因靠近基材一縱使並未接觸一而至少部份地選擇性罩蔽該 基材),非可順形罩與罩鍍操作(即接觸表面並非充分可撓變 順形的罩體和依據該等罩體的操作),及黏接罩與罩鍍操作 (即黏接於一基材的罩體和使用該等罩體的操作,該基材上 會在未接觸處發生選擇性沈積或蝕刻)。 20 第5圖示出本發明一較佳實施例之基本操作的流程 圖。該製程開始於操作102,其係提供一基材,該基材上將 會被添加後續的沈積材料層。此基材典型係由一導電材料 製成,其上能夠進行電沈積,但亦可為一介電材料其上已 被沈積一導電材料的晶種層。 20 200426253 該製程會繼續前進至操作104,其係將一料層沈積在該 基材或一已被設在該基材上的先前形成層上。依據本發明 的某些實施例,所沈積的料層會包含二或更多種材料,其 中之一或多者會被圖案化來賦具一待製成結構所需的造 5 型,而其它之一或多種材料會形如犧牲材料其在料層製造 完成之後,將會被由該結構除去。本發明之一較佳實施例 係用來將該結構由其所製設的基材(即該暫時基材)分離開 來,且因最好使該基材由一與犧牲材料不同的結構性材料 製成,故在某些實施例中,沈積於該基材上的第一或更多 10 層可僅由犧牲材料來構成。 又,在本發明的較佳實施例中,由於其上要製設該結 構的基材並非該結構所要固接的永久基材,故最好在某些 實施例中,所沈積之(該結構的)第一層相對於永久基材係為 該結構的最末層,而所沈積的最末層相對於該永久基材係 15 為第一層。換言之,在某些實施例中,該結構之各層最好 以相反順序來沈積。 所用的電化學製造方法係可類似於第1(a)〜1(c)及2(a) 〜2(f)圖中所示者,或在No.6027630美國專利中所揭之另一 製法,或在前述各公開資料中所述之一種製法,或在所附 20 專利及申請案陳報表中之一專利或申請案中所述的一種製 法,或在該等公開資料、專利及申請案中所述之各種方法 組合的一種製法,或專業人士已知或可推知的製法。當然 該等結構部份亦可藉其它3D成型或製造方法來製成。 在沈積一層之後,該製程會前進至方塊106,其中會查 21 200426253 詢是否該結構的最末層已被製成(即在本發明的某些實施 例中將會接觸永久基材的一層)。若其答案為“否”,則該製 程又會繞回操作104再進行沈積。若該答案為“是”,則製程 會移向操作108。 5 該操作108係將一永久基材(例如一介電材料)固接於該 結構的最後沈積層。該固接可藉一黏劑來達成,例如一感 壓式黏劑,一熱敏式黏劑,或一可輻射固化的黏劑(假使該 基材能透射適當的輻射)。該黏劑的敷設可用專業人士習知 的多種方式來進行(例如塗佈、旋塗、喷灑等等)。該固接亦 10 可藉非黏劑連結技術來完成,例如表面熔接、燒結、焊接、 超音波溶接、振動纟容接寺寺。 在將永久基材與沈積材料層固接在一起之後,該製程 會前進至操作110,其中一永久基材和料層等會與該暫時基 材分離,且所有的犧牲材料皆會被除去。若有一或多層犧 15 牲材料介設於暫時基材與結構材料之間,或若該暫時基材 係由犧牲材料或由會被用來選擇性分離該犧牲材料與結構 材料之蝕刻劑所攻擊的其它材料來製成時,則該分離過程 可形如該犧牲材料的去除程序之一自然部份來發生。 在變化實施例中,該操作108與110中的三項工作能以 20 不同的順序來進行,例如:(1)先連結再同時分離及去除犧 牲材料;(2)先連結,再分離,然後去除;(3)同時地分離及 去除再連結;(4)先去除,再連結,然後分離。 第6(a)〜6(c)圖示出依據本發明之一較佳實施例所造 成之一結構例(譬如一開關)。該結構之二不同的立體圖係被 2? 200426253 不於第6(a)與6(b)圖中,而一側視圖係示於第6(c)圖中。第 6(a)圖中可看見該整體結構122,且該結構固接於永久基材 124。第6(b)圖示出該結構122已固接於永久基材124時的一 斗伤,但可看出當該結構被製造並固接於暫時基材如第7(勾 5至7(n)圖所不者的料層製程。如第6(c)圖所示,該結構係由 十層201〜210所構成。 10 15 20 第7(a)〜7(0)圖示出製造第6(a)〜6(c)圖所示結構之各 製程狀態。在本實施例中,後續層會被製設並黏接於先前 ^積層的底部。除了第7(b)圖所示的犧牲材料外,當示出目 别沈積層上的結構材料和犧牲材料時,該結構材料會被完 全示出’而犧牲材料僅有外部輪㈣被示出。在一目前沈 積層上,任何沈積結構#料和犧牲材料的順序皆可接受。 在變化實施例中’該各料層可被重疊或併排沈積。於本申 請案中’除非内容需要—不同的卿,否則當-沈積被摇 述發生於前—沈積物上時,並不需要作成料層走向的絕對 論斷,而僅應陳明沈積順序的相對關係。 第7⑷圖示出該製程以一暫時基材212來開始。 第7_示出該暫時基材會被佈設—犧牲材料的塗層 或第一沈積層2U。該犧牲材料層2U在該製程之一稍後步 驟時可容許該結構材料與暫時基材分離。當然,在實際摔 作中’ y個以t的該層211亦可被製成,或其厚度可被調整 以便在嗣後步驟中能夠容易分離。 第7⑷圖二出―層210的結構材油〇,係由-虛線來被 圖案化,而該虛線表示亦曾存在之犧牲材料的邊界。 23 200426253 ^ 7(d)J 7(1)圖係示出由料層至201之各接續沈積 層母目則,尤積層之結構材料209,至2〇1,的圖案亦隨著該 ^犧㈣料的外廓線被示出。先前沈積層則被示為材料 貝^而〆又有不出結構材料和犧牲材料的圖案化區別。 第()⑻圖不出該永久基材200固接於⑴各料芦 2〇1〜_塊,該釋離層2ιι,及(3剛^ 第㈣圖中將該部份形錢構之各元件示出如實心方塊, 而弟7⑷圖不出該犧牲材料和永久基材宛如透明狀,因此可 以看出各層及結構材料2()1•〜21(),的製型。 ίο 15 …第7(G)圖示出已釋離的結構材料201,〜210,被黏接於 该水久基材200。縣㈣被示如透明狀时說明,但其可 為透明(如玻璃)或不透光的,其中有些用途可能需要透明材 料(例如當結構包含-掃描鏡而可接受穿過該基材的輻 射亚由。玄基材回运穿出時)。該暫時基材可隨該犧牲材料 被除去’祕牲材料能以一餘刻劑(例如如响「Μ)來選 擇性姓刻,其對賴牲材料(如銅)有襲性,但不會解體結 構材料(如纷補牲材料㈣劑可包括—防點⑭劑或類似 物,以確保其不會攻擊該結構材料。 20 第8⑷〜8(d)圖示出製造第6⑷〜6(c)圖之結構的最末 層之變化例’及該永久基材如何配接該料層的變化劑。第 8(a)圖不出該最末層僅包含該結構材料2〇1,。第8(b)圖示出 该永久基材不僅被製設或黏接於該最末層底部,亦設在該 最末層的側邊,因此該最末層的結構材料會變成至少部份 埋入4基材中。第8(c)及8(d)圖示出該所形成結構之二立體 24 200426253 ίο 圖。如圖所示,該結構材料2〇1,係被埋入該基材中,故只 有十为之九的原始結構材料層延伸於該永久基材的表面 上。該結構材料201,受該基材的包圍能以多種方式來達 成。舉例而言,取代該基材呈一預製片體的形式來黏接於 "亥等料層,其亦得為可流動材料的形式而能被模製成型來 埋圍該結構材料’並具有一所需厚度延伸超過最末層結構 材料的表面。而在另—例中’該基材仍可呈片狀而黏結於 最末層的結構材料2〇1’,但該最末層上未被沈積犧牲材料 或犧牲材料已被除去的部份,則可充填—環氧樹脂或其它 Π 、^動/可固化的材料。該永久基材會被設於定位,而該 樹脂或其它材料的硬化不僅會填滿結構材料脚周圍的區 域,亦會造成該等料層與該基材之間的黏接。 15 上述實施例亦具有各種變化例。即使在未將該最末一 層側邊的基材加以成型時,其仍可使用—可成型的材料, 20 ::不同於—材料片而由一暫時可流動的材料來製成該基 材。接觸墊及通路可由該結構材料來製成,且它們可延伸 至該基材表面的所需位置,或除了各所需的接觸點外皆被 該基材的材料所包封。該犧牲材料之選擇性部份姓刻可在 该水久基材_接或製設之前來進行。各料層可被钱刻至 小於一層厚度或大於-層厚度的深度。在某些實施例中, 摘刻深度可令部份的結構材料能完全延伸穿過將被 的基材,而來形成由絲材底部突㈣互接物。在 ^接物延伸穿過基材底部的實施例中,及在成型時不: 生5玄寺延伸的情況下’該基㈣“乃可被平坦化直到 25 200426253 該結構材料曝露為止。該基材並不一定是要平坦的’且其 侧向延伸亦不需要對應於該等料層。 假使部份蝕刻至超過一層厚度的深度,則最好該結構 材料的圖案能保持固定圖案^但也許最深的料層將會被該 5 部份蝕刻所曝露。此將有助於確保更均一的蝕刻深度,因 為該犧牲材料將不會被結構材料的延伸區域所屏敝。但 是,在該蝕刻深度較不重要或預期一不同的結構圖案將會 造成一所需之蝕刻圖案的實施例中,則結構材料的圖案化 將不必有該限制。 10 在某些實施例中,不同於該暫時基材與永久基材係被 設在該等沈積層的相反側上,該永久基材亦可被設在垂直 於該暫時基材的方位中。換言之,該永久基材亦可被製設 在該多數沈積層的側邊。 在某些實施例中,並不將該永久基材固接於該疊層相 15 對於暫時基材的相反面上’該暫時基材會先被去除而該永 久基材再黏接於其位置上。此係可令該暫時基材或其最頂 面由一種材料來製成,其能被選擇性蝕刻或由該等料層被 除去,且最好不會損及該各層的結構材料或犧牲材料,而 來達成。又在去除之後,該結構的最底層將會曝露,且該 20 永久基材(例如介電基材)將會固接其上。 當需要將該永久基材設入某些被該暫時基材所佔的位 置時,在某些實施例中,可能需要先將一第二暫時基材設 在該疊層相對於第一暫時基材的相反面上,然後該第一暫 時基材可被除去,再固接該永久基材,接著再除去第二暫 26 200426253 時基材。又在其它貫施例中^該永久基材可被設在該豐層 相對於該基材(其上係製設該等料層)的相反面上,且該基材 能被保留。 於本發明的某些實施例中,該永久基材可非為一介電 5 材料而以某些其它材料來取代。例如,該永久基材可由一 導電材料製成’而能被容易地電沈積。 雖於此係使用“永久材料”乙詞,但應請瞭解並非意指 該永久材料必須能存在歷經該結構的整個壽命,而是假使 其構成該結構的一部份,則至少應能供用於該結構使用壽 10 命的某些部份。 在本發明的某些實施例中,當沈積該等疊層時亦可能 不使用犧牲層。在某些實施例中,各層的製造得以單一或 多次的選擇性沈積來完成,且可能有一或多次的覆面沈積 和一或多次的平坦化操作。 15 本發明的某些實施例可提供來將電化學製成的結構 (例如使用可順形接觸罩鍍技術或黏接罩鍍技術)固接於可 能包含主動元件的基材上。此係示於第9(a)〜9(e)圖的實施 例中,其中有一電化學製成的結構會被固接於一壓電元 件,並結合該二者而形成一可操作的壓電裝置。 20 在第9(a)圖中,一結構302包含結構材料304被一犧牲材 料306所包圍。該結構302最好係以電化學製法由多數黏接 層所製成。該結構302係被製設在一釋離材料308上,其則 固接於一基材312。該釋離材料308可相同於犧牲材料 306’,或其亦可為另一種材料而能籍蝕刻或熔化(例如為一 27 200426253 知劑)或去除而被分離。該釋離材料3〇8可在該結構3〇2開弘 電化學製造之前纽覆設在-基材312上,或亦能以該電化 學製程的一或數種最先沈積物來製成。該基材典型係為— 導電材料,但在某些實施例中其亦可為介電材料,並能被 覆設一導電材料的晶種層。 ίο 在第9(b)圖中’-預製的元件或構件切係被示出位於 該結構搬上方。該預製構件322已準備崎於該電化學制 造結構302。該構件322係固設於—裝置基材32心通常^ 裝置基材324會形成該裝置的最終基材,該裝置係為該構: 322與該結構3〇2之結構㈣的組合物狀裝置的最 、-、而求而疋,该裝置基材324可採用任何所需的性質(例如 其可為H -介電質,—透明材料,或—撓性材料等 等)。在本例中,該裝置基材324為—介電質,故其供 電隔離。在該Fμ ^ 15 ,Μ衷置基材324上,有-金屬元素326會被圖案 ”上有壓電材料328的區域會被圖案化,該壓電材料 ^又有-黏劑33〇(若有需要可為導電的)會類案化。一適 “勺黏劑要能對該結構地的結構材料则具有良好的黏 |生^金屬7G素326會被提供並_化來作為一電極以作動 20 / [包材料’亚作為—線路來將該電極連接於一電源。 ’在第9(c)圖中、玄預製構件322係被黏劑33〇黏接於該結 構秦在第9(d)圖中,該釋離材料雇已被除去。在第9(e) 回中4犧牲材料3G6已由結構材料3Q4被除去,遂使構件 33饿該結構如釋離而形成該完成的裝置说,其係為構件 3°4,322與裝置基材324等之組合物。 28 200426253 第10圖為一流程圖示出第9(a)〜9(e)圖之實施例的製 程步驟。在第10圖中,該製程會在方塊402和406所示的兩 點來開始。方塊402係提供一基材,其能與一製設其上的構 件分離。該基材與該構件可因該基材上具有一釋離層,或 5 因一釋離層將會被設在該基材上,而能夠分離。 方塊406係提供一第二構件,其會具有一所需形狀或由 多種所需的材料來製成。該第二構件會具有一表面能被固 接於方塊402所提供之第一構件的表面上。 方塊4〇4係在該基材上製設〆戒多層,而來形成所要製 10 造之一裝置的第一構件(即一部份)。在製成第一構件的過程 中,該構件可被一犧牲材料部份地包圍,該犧牲材料最後 音由该料層的構件部份被除去。該弟一構件會具有一表面 能被黏結或固接於第二構件。該二方塊404和406係為方塊 208之操作的起始點。 15 在方塊408中,該第一及第二構件的一或二者將會藉附 加一黏劑於其至少一連結表面上,而來準備互相黏接。當 然在變化貫施例中,方塊亦巧·能非為該製程的一部份。 例如,在某些實施例中,一黏劑可能為所提供之第二構件 的一部份。 20 該製程會由方塊408移向方塊4丨〇,其中該二構件將會 互相黏接。此黏接可使用感壓黏劑,熱熔黏劑,或其它專 業人士所習知的手段來達成。 該製程嗣會移至方塊412,其中該第一構件會與其所附 设的基材分開。 29 200426253 嗣該製程會移至方塊414,其中該第一構件會與所要製 成的最終裝置之非保留部份的任何犧牲材料分離。 接著該製程會移至方塊416,其中會進行附加的製造操 作,或在方塊414的操作中被釋離的裝置可被拿來使用。 5 在變化實施例中,方塊414和412的操作順序可以相 反。又在其它實施例中,該二方塊414和412的操作係可同 時完成。又在另外的實施例中,該方塊412及/或414的操作 係可在方塊408與410的操作之間來進行。在參閱本文之後 專業人士將可容易推知各種其它的變化例。 10 於本發明的某些實施例中,被固接的基材係可為一被 動元件,但與其固接的結構可具有電化學製造部份及以其 它沈積或圖案化技術來製成的部份。該等部份之一或兩者 可包含主動構件。此係被示於第11(a)〜ll(j)圖的實施例中。 第11(a)〜ll(j)圖示出本發明的另一變化實施例,其係 15 使用相同的操作來製成多數料層,再使用不同的操作來製 成一結構的添加部份。第11(a)圖示出第一結構502的側視圖 以供說明,其係類似於第9(a)圖。 在第11(b)圖中,一壓電材料528已被沈積於該結構502 的頂面(即最末層)上,且一光阻520已被沈積在該壓電材料 20 528上。 在第11(c)圖中,該壓電材料528之一所需圖案乃被示 出。此壓電材料的圖案化可如下來完成:首先圖案化該光 阻520,再用其作為一圖案來選擇性蝕刻該壓電材料。在一 變化製成中,例如,該壓電材料可被以上位去除(lift-off) 30 200426253 法來圖案化。 第11(d)圖示出一可擇步驟用來將該部份形成裝置的表 面水平〃利用一^介電材料5 3 2填滿♦虫刻该Μ電材料所造成的 空隙,而來形成一均勻的高度。在某些變化實施例中,可 5 能需要,或至少較好能將該組合的介電及壓電材料層平坦 化。 第11(e)圖示出下一層沈積後的結構,其會在該等壓電 及介電材料頂面上提供一金屬534。 第11(f)圖示出所沈積之金屬被圖案化的結果。該金屬 10 的圖案會被選擇來形成該壓電元件的電極,以及一互接軌 路。該金屬的圖案化能以多種方式來進行,例如,其能以 前述用來圖案化該壓電材料的方式來進行。第11(g)圖示出 以一介電材料536(其可相同於介電材料532)來填滿金屬層 内之空隙的結果。該等空隙的充填亦可使用相同於填滿該 15 壓電材料層之空隙的方法來完成。例如,一材料可被大量 沈積、配佈、固化,然後平坦化來產生一所需厚度且均勻 的料層。在第11(h)圖中,一裝置基材538係被覆設在該金屬 及介電層上。該基材可具有任何.所需的特性,而在本例中 係為一介電質。在第ll(i)圖中,一釋離材料508已被除去。 20 最後,在第ll(j)圖中,一犧牲材料508已被除去,而形成一 釋離的裝置,其可進行附加的處理操作或被拿來使用。 在一最終的功能性裝置中,一穿過第9 (e)圖之結構材料 304,或第11G)圖中之504的連接物乃可被用來形成該壓電 元件的第二電極,以便製成一最終裝置。 31 200426253 第12圖為一流程圖示出第11(a)〜ll(j)圖之實施例的製 程。該製程開始於方塊602,有一基材會被提供,其上會製 設一裝置。該裝置最後亦會被移轉至一不同基材上,該基 材得已設有一釋離層,或可在電化學製造第一或更多層時 5 再來添加一適當的釋離材料(例如犧牲材料)。 方塊604係使用一第一製法來製成一或多層(例如以電 化學製造),其將會形成該裝置的一部份而可被一犧牲材料 所包圍。 方塊606係使用至少一不同的沈積法來進一步構建及 10 圖案化該結構。在某些實施例中,附加的電化學製造操作 將可被用來完成該結構,其會包含該未釋離的裝置。 方塊608係將一黏劑佈設在所形成結構的最末層上,及 /或一要被連結於該結構的基材上。該黏劑的使用可能需要 或可能不必依據該基材的構成材料,以及用來接合的方法。 15 方塊610係在該結構的最後形成層上製成一基材,或將 該基材黏接於該最後形成層上。 方塊612係將該結構與其所製設的原始基材分離。 方塊614係將該結構與任何非屬最終裝置之保留部份 的犧牲材料分離。 20 方塊616係進行任何附加的製造操作,或將該裝置拿來 使用。利用第10圖的流程圖,各種變化操作將可被實施, 且可改變各操作方塊的順序。 有二附加的實施例係被示於第13(a)〜13(e),14(a)〜 14(c)及15(a)〜15(f)圖中。該二附加的實施例係示出基材轉 換技術,其包括增加该結構與黏接基材之間的表面積(接 面)’或在該結構中製成能與交換基材扣接的細構。 第13(a)〜13(c)圖示出一用來將一結構7〇2由一第一基 材704轉換至一第一基材706的方法,其中該結構與第二基 材之間的接觸面積係為平坦的,故沒有增加的表面積或扣 接部份等存在來協助改善其黏接。 第13(d)圖示出一修正的結構702,和修正的基材7〇6,, 其中在该結構之一平坦表面上具有凹槽缺口,而在該更換 基材或一黏劑層中具有凸部等可嵌入該等凹槽内來加強該 結構與基材之間的黏合。 第13(e)圖示出一修正的結構7〇2,,黏接於一修正的更換 基材706”,其中該結構包含具有倒削部的凹槽,而該更換 基材或-黏劑的材料會設人其内,以使該結構和基材能藉 它們之間的機械性扣接來加強黏合。 第13(d)圖的修正結構能以許多不同的方法來實施。其 中之一製法係示於第丨4(a)〜14⑷圖中。 第14(a)圖示出邊結構之最後兩層川和714已被, 而該料層714尚未扣接於一基材。 乂 ,弟Μ謂示出該二層712與714,之另一圖,其中該層 714’已被修正而含有孔洞、凹槽、隙縫等設在結構材料718 ^該等孔洞和凹槽可被填滿一犧牲材料聊,來作為該製 ㈣一部份。第14⑷圖則示出該製程在第14(b)圖所示的犧 牲材料—扣4,的開謂巾除去之後的狀態。 在某些實施例中,在料層714,中的開孔可在該料層製 200426253 程中,藉修正該層的資料指令而來形成。或者,在直它银 施例7料層714,的開孔可在該層製造完成後,藉於戶; 需位置1擇㈣刻孔洞於該料層714中而來製成。 刻製=❹接觸罩或黏接罩來進行。假使不顧慮會由該 、结構的㈣除去犧牲材料,則該犧牲材⑽祕刻去 除將可大1地進行。或者’該银刻亦可使用一或 來完=1玄等罩體至少會罩蔽該犧牲材料不要被除去的區 城冒罩敝該結構材料。當該等開孔被姓入用來黏接 的料後’—黏劑或可流動的基材材料嗣可被佈設, ίο 15 20 故該基材⑼接於該結構或固化地接_結構(此會 黏接)° ==實施例中’最好該犧牲材料係在黏接操作之前 來設=料層714不會被敍掉的結構材料部份之外側區域 二=材料之此等黏接和去除的順序將可改善該基材 材材:定位’及/或可協助限制該黏劑或可流動 的基材材料移入該結構周圍的區域中 =:玲該、__外部嶋心Γ: 口為錢牲材料可能在黏接之前比黏接之後更容易接近。 从其它的實施例中,外部區域的餘刻會在黏接之前 來進订’僅是因為㈣雜的結構敎確定㈣不均-性 隙破可流動之基材材料或1占劑部份或完全地填 ::二,大的包容性。修正該結構的最末層(或最後數層) 而隻仔的貧料,乃可依據設計者修正該所需結構的cad 播指令,或藉—資料處理程式其會執行各種b。。^操作⑼ 34 200426253 如浸蝕或擴張操作),並依據固定或使用者可設定的參數(例 如固接位置和尺寸的固定方格,其能被疊覆於該等料層之 結構材料的正確位置上)來為之。該資料處理操作可依據已 被傳入該料層資料中的結構資料,或依據保留在一3D格式 5 的結構貢料而來進行。 在第13(e)圖的結構和基材之間的轉換區之扣持功能可 藉多種方式來獲得。例如,一蝕刻操作可被使用,其具有 會將蝕入的材料倒削的趨勢。該等倒削亦可為將一可順形 接觸罩壓入正被形成之孔内的結果,該罩體可保護該等開 10 孔的側壁上部達到某一深度,而在該點處水平的蝕刻即可 形成一倒削部。該等扣持功能亦可藉修正該結構的最後二 或更多層上之結構材料的圖案而來獲得,其中該接觸層(及 可能一或多個添加層)在結構材料中將會具有較小的開 孔,而在一或多個先前形成層中將會具有較大的開孔。該 15 等在不同料層中之較小及較大的開孔嗣會在料層製程中被 填滿犧牲材料。該犧牲材料能在料層製成之後以如同前於 第14(b)和14(c)圖中所述的方式來被除去。一種製造該等扣 持部,倒削部或互鎖結構之方法例乃被示於第15(a)〜15⑴ 圖中。 20 第1 5(a)圖示出一以電化學製造法製成之結構例的最後 五層,該五層皆具有相同的構造。如圖所示,該結構包含 結構材料區752及犧牲材料區754係在結構本身的外圍。 第15(b)圖示出該電化學製成結構的最後數層,其中最 後二層的構造已被修正而在其結構材料中含有開孔,其具 35 200426253 有倒切部或扣持結構。如第l5(b)圖所示,該等扣持結構762 和764以及導至它們的通道772和774會被暫時地填滿一第 二犧牲材料,其可與第一犧牲材料754相同或者不同。 第15(c)圖7F出該等凹槽或扣持結構762和764及其通道 5 772和774中的第二犧牲材料已被除去。 第i5(d)圖不出該結構已被覆設一黏劑774,且一轉換基 材776位於黏接位置上方。 第15(e)圖不出该轉換基材w已被降低至定位並被黏 &錢$、4結_狀態。不僅在該基材與該結構之間會 」占接而且在1占劑與該結構之間亦會發生互扣鎖接, 又若該黏劑對基材具有比對該結構更佳的黏接特性,則該 組合喊材/結構系統之整體牢固性將能被改善。 弟15(_*出該外部的犧牲材料μ已㈣去之後的 — 鎖方式以及增加表面積的方法可有許多的變化 I施例。在該二方法中,其交接或互扣元件的高度可由一 Z一部份延伸至多層的厚度。若不錢關來將該基材 與該結構黏接在—知 開孔,然後令如化。,、彳可流動的基材材料亦可填滿該等 20 在其它實施例中,該基材本身亦可包含開孔或扣持細 而有助於一黏劑或填充材料的抓持。又在其它實施例 ==等扣持細構並非任何單卿柄基材與結構間之扣 (=:的細構,而為二或更多能產生扣接形態的結構組合 _以不同角度伸入該結構内的直孔等)。 36 200426253 又在其它實施例中,該二要被固接者亦可非為一多層 結構與一基材,而是包含一或多個多層結構結合—或多: 或構件,其係可為或不是多層結構,並可為或不 一可形成互扣加強黏接結構的實施例係可概述如下. ⑴獲得—所要製狀結構的㈣槽;(2)敎 在最後一或多層中含有一或多個支道或通道,並在緊= :咖:各層的-或多層中能包含凹槽或扣持結 ίο 凹^⑽材上製成蝴冓;⑷鱗該等通道或扣持孔的 才曰’(5)佈設—可流動材料於具有該等通道之 面,若一分開的基材要以該可流動材料來黏接, 一黏劑,或其得為-可固化材料而能被成型為所需美材= 15 =:=該_或固化該基材材料以黏接該糾和該 二構麥,一黏接於該結構的基材;及⑺假使需 切去除,_麵何㈣的難㈣ 該結構釋離。 便弟基材由 許多可能的變化實施例另外包含:⑴ 20 料來填滿該等開孔,以及該結構的外部區域,心=才 ==材料來為之;_結_ 而使-犧牲材料π暫時地充填該等開孔;及 使用多種結構材料。導至該等凹槽或扣 道可具有任何所需的長度,它們可有不同的截面:二 同=度。該等凹槽或扣持細構並不一定要有與該等通道 尺寸,因為它們亦可僅簡單地由該通道的位置念 37 200426253 出,就此而論事實上它們更可具有較小的戴面積;(5)在各 凹槽與通道之間並不需要一對一地對應;(6)該等凹檜本身 可具有不同的高度,或被設在該結構中的不同深度,或具 有不同的截面尺寸。 5 在其它的變化實施例中,取代貫入一結構元件内部的 倒切部或扣持細構,其亦可在結構材料的側壁區域上形成 倒切扣槽,該等扣槽能被填滿一黏劑或基材材料,而在與 該結構材料之其它部份上的反向扣槽配接時來形成互鎖元 件。 10 在某些實施例中,多層結構能由一“頂”層(即預期的最 末層)來開始製造,其係鄰接於一暫時基材,或亦可能以一 或多層犧牲材料來與該暫時基材分開,然後附加在後續各 層上,直到第一層達到為止。在此情況下基材的轉換可直 接將該結構(例如永久基材)固接於最後形成層(例如預期的 15 第一層)上而來完成,然後,若尚未進行,則該暫時基材可 被除去。在某些其它實施例中,該多層結構可由預定的第 一層來開始製造,其能被直接形成於一暫時基材上,或被 一犧牲材料來與該暫時基材隔開,該犧牲材料可相同或不 同於形成含有結構材料之料層的一部份之犧牲材料。此構 20 建程序會由第一層逐進至最末層,且若需要則一或多層的 犧牲材料可被設在最末層上。設在最末層上的犧牲材料可 相同或不同於用來製成包含結構材料和犧牲材料之各層所 ’用的犧牲材料。若有需要,一第二暫時基材亦可固接於該 最末層或其上之料層。該第一暫時基材(即原始基材)嗣可被 38 200426253 除去。假使有料犧料_存纽㈣—層底下,則它 們亦可被除去’然後以—永久(或結構)基材固接於該第- 層’嗣該第二㈣基材能隨著任何尚未被除去的犧牲材料 來一起被除去。 在某些實施例中,該結構材料可為硬質的,而在其它 實施例中則可μ性的。又在其它實施例中,該永久基材 可為積體電路或其它電構件,而㈣介電_、線結、重 流焊觸點,及/或其它的導電或介電元件之-或多者來完成 固接。 10 # #人士在參閱本文之後將可推知許多其它的變化實 施例。更多的實施例亦可由本案所揭之各種技術的組合來 形成°又更多的實_可將本案所揭技術與下表之各專利 和申請案所述之内容組合而來形成,其各内容併此附送參考。 •美國專利申請案, 申言青日 美國專利申請公開 案號,公開日 Γ\Γ\ / Λ Α Γ\ ^ 發明人,名承〜-------- • 09/493,496 2001.01.28 Cohen,Adam L·,“電化學製造的方法” - • 10/677556 2003.10.01 ’含有可承接構件之對準及/或扣持固定物的單 • 10/8 j0262 2004.04.21 人,“減少電化學製造的3D結構中之層間不連續S 的万法 • (Docket P-US099 -A-MF) 2004.05.07 I^ockaid等土’ “使用黏接罩,配合介電片及/或晶種層而可 藉平坦化來部份去除之電化學製造結構的方法,, • 10/271574 2002.10.15 • 20030127336A1 2003.07.10 ^ien等人,“用來製造高縱橫比-之微機電結構的方法及裝-置 • 10/697597 2002.12.20 Lockaid寺人’包含喷佈金屬或粉末塗覆製程的£faB方法 及裝置” • 10/677498 2003.10.01 Cohen等人,“多孔罩及使用該罩來致造30結構的方法和裝 置,, • 10/724513 2003.11.26 Cohen等人,“非順形罩及用來製造3D結構的方法和裝置,, • 10/607931 2003.06.27 Brown等人,“微小Rp和微波構件及用來製造該等構件的方 ^__ 39 200426253 • (Docket P-US093 -A-MF) 2004.05.07 層3D結構時來平坦化的鍍及/或在形成多 • 10/387958 2003.03.13 • 2003-022168-A1 2003.12.04 Cohen 耸人,“田 iu 制、汰 —-—__ 學製ώ法和之3D結福^ • 10/434494 2003.05.07 • 2004-0000489-A1 2004.01.01 質的3务和裝車銀佈操作中用來監測沈積品 • 10/434289 2003.05.07 • 20040065555 2004.04.08 彻*材的定位陰極活化之可順形接觸笨 • 10/434294 2003.05.07 • 20040065550 2004.04.08 Uang Zhang具有強化後沈檟慝理的電化學製造方法,, • 10/434295 2003.05.07 • 2004-0004001 2004.01.08 时衣造與半導體類電路整合之3D結構极 • 10/434315 2003.05.07 • 2003-0234179 2003.12.25 A.細8,使用犧牲金屬圖案來成形結構蘇 • 10/434103 2004.05.07 • 2004-0020782 2004.02.05 學製柏密封微結構及絲製造該踩 • (Docket P-US105 -A-MF) 2004.05.07 Cohen等人,用方;電化學製造結構的多步驟釋放法,,—— • 10/434519 2003.05.07 • 2004-0007470 2004.01.15 genms R. Smalley ’藉由互豐層或選擇性蝕刻及空隙逐蒼 來電化學製造結構的方法和裝置” #_ j ”補 • 60/533947 2003.12.31 Kumar等人,“用來標記的探針陣列和方法,, _ •一 • 10/724515 2003.11.26 的|塞斧觸罩與基材之不平行配接之雨·系^ 本發明尚存有各種其它實施例。有些該等實施例係依 據本文的技術與附件之各種技術的組合。有些實施例可能 未使用任何覆面沈積製程及/或平坦化製程。某些實施例可 能包括在一層或多層上之多種不同材料的選擇性沈積。有 5些實施例可能使用非電沈積的覆面沈積製法。有些實施例 40 200426253 會用鎳作為結構材料,而其它實施例則可能使用不同的材 料,例如金、銀或任何其它可電沈積的材料,其能與銅及/ 或某些其它的犧牲材料分開。有些實施例可能用銅作為結 構材料,而具有或沒有犧牲材料。有些實施例會除去犧牲 5 材料,而其它實施例則不會。在某些實施例中,若沈積係 以一種方式來發生,而使該CC罩的可順形部份與該基材之 間的密封由該可順形材料表面移轉至其内側邊緣時,則沈 積深度可藉將該可順形接觸罩由該基材拉離而來增加。 在參閱本文之後,專業人士將可容易得知本發明的許 10 多其它實施例,設計變化和用法等。因此,本發明並不受 限於前述的特定實施例、變化例和用途,而僅由以下的申 請專利範圍來限制。 I:圖式簡單說明2 第1(a)〜1(c)圖概略地示出一 CC罩鍍佈法之不同階段 15 的側視圖;而第1(d)〜1(g)圖係概略地示出一使用不同類型 之CC罩的鍍佈法之不同階段的側視圖。 第2(a)〜2(f)圖概略地示出一用來形成一特定結構的電 化學製造方法之不同階段的側視圖,其中有一犧牲材料會 被選擇性沈積,而一結構材料會被覆面沈積。 20 第3(a)〜3(c)圖概略示出可用來人工實施第2(a)〜2(f) 圖中之電化學製法的各種次組合例之側視圖。 第4(a)〜4(i)圖概略示出使用黏接罩鍍佈法來製成一結 構的第一層,其中一第二材料的覆面沈積會覆蓋第一材料 在各沈積位置之間的開孔以及第一材料本身。 41 200426253 第5圖示出本發明一較佳實施例之基本操作的流程圖。 第6(a)〜6(c)圖示出一依據本發明的較佳實施例來造 成的結構例,其中第6(a)及6(b)圖示出該結構之二不同的立 體圖,而第6(c)圖示出該結構的側視圖。 5 第7(a)〜7(〇)圖示出依本發明之一較佳實施例由多數 黏接層來製成第6(a)〜6(c)圖之結構的各程序。 第8(a)〜8(d)圖示出製成第6(a)〜6(c)圖之結構的最末 層之一變化例,及該永久基材如何配接該料層。 第9(a)〜9(e)圖示出當實施本發明之一實施例時的各 10 步驟。 第10圖提供第9(a)〜9(e)圖的實施例之基本操作的流 程圖。 第11(a)〜ll(j)圖示出當實施本發明之一實施例時所進 行的各操作步驟。 15 第12圖提供本發明另一實施例之基本操作的流程圖。 第13(a)〜13(c)圖概略示出將一結構702由一第一基材 704轉接於一第二基材706的過程。 第13(d)〜13(e)圖概略示出具有可加強固接之修正構 造的結構與基材之側視圖。 20 第14(a)〜14(c)圖概略示出一製法可修正一結構之一 固接層的構造使其含有第13(d)圖所示的凹槽。 第15(a)〜15(f)圖概略示出一製法可修正一結構之一固 接層的構造使其含有扣接凹槽以加強該結構與基材的互 接。 42 25 200426253 【圖式之主要元件代表符號表】 2···第一材料 56···Υ枱 4···第二材料 58,64…槽 6,82…基材 62···陽極 8".CC 罩 66···電鍍溶液 10…絕緣體 68···支腳 12···陽極 72,74…框架 14···電鍍溶液 84···光阻 16···電解液 86,88…表面 18···電源 94,96…金屬 20…支撐結構 98 — 3D結構 22···沈積材料 102-110···製程之各操作步驟 26,92···開孑L 122,302···結構 32···電化學製造系統 124,200…永久基材 34…基材固持次系統 201-210···各料層 36…CC罩次系統 211…犧牲材料層 38…覆面沈積次系統 212…暫時基材 40···平坦化次系統 304,504…結構材料 42…滑塊 306,506…犧牲材料 44···致動器 308,508···釋離材料 46···指示器 312…基材 48···載具 322…預製構件 52···拋光板 324···裝置基材 54…力枱 326···金屬 43 200426253 328···壓電材料 602-614…各製程步驟 330…黏劑 702…結構 334…構件 704…第一基材 336…裝置 706…第二基材 402-416···各製程步驟 712,714…料層 502···第一結構 718,752…結構材料 520···光阻 720/754…犧牲材料 528··· /¾電材料 722···開孔 532,536···介電材料 762,764…扣持結構 534···金屬 772/774…通道 538···裝置基材 776···轉換基材Electrochemical Batch Fabrication of Arbitrary 3-D Microstructures55, Micromaching and Microfabrication Process Technology, SPIE 1999 Symposium on Micromaching and Microfabrication, September 1999 o 15 (7) F.  Tseng, G.  Zhang, U.  Frodis, A.  Cohen, F.  "EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures using a Low-Cost Automated Batch Process" by Mansfeld, P. Will et al., MEMS Symposium, ASME 1999 International Mechanical Engineering Congress and Exposition, November, 1999. (8) A.  Cohen, "Electrochemical Fabrication (EFABTM)", Chapter 19 of The MEMS Handbook, edited by Mohamed Gad-EL-Hak5 CRC Press, 2002. (9) "MiciOfabi. ication-Rapid Prototyping's Killer Application ”, 7 200426253 page 1 ~ 5 of the Rapid Prototyping Rep. CAD / CAM Publishing, Inc., JUne] 999. The contents of the above nine kinds of public information are attached here for reference. The electrochemical The deposition method can be implemented in many ways as described in the above patents and publications. In one way, 'the manufacturing method will perform three separate operations when forming each layer of the structure to be manufactured ... Deposition to selectively deposit at least "material on" one or more desired areas of the substrate. "2. Then, the electrodeposition is used to deposit at least-additive material, so that the additive material covers the area that has been selectively deposited and the area that is not selectively deposited on the substrate. 15 • Take Jun, flatten the material deposited in Brothers 1 and 2 to form a first layer of smooth surface of appropriate thickness, which has at least-area with less material and material, and at least-area Contains at least the at least-additive material after the first-layer is made- 'or most of the additional layers can be adjacent to the previous sub-layer, "smooth to the previous layer ^ # $ Some additional layers are repeated by repeating the first 1 The younger brother 3 knows that the production of the subsequent layers made one or more times, and the manufacturing of the subsequent layers will consider the two bases and the original substrate as the new thickened substrate. After the manufacture of all the layers is completed, less one # (1) To a 3D structure that is to be exposed or released by the deposited material, the preferred method is to remove the 3D structure by an insect engraving process. One or more of the conformable shapes can be connected to the first. 1Selective deposition of contact cover plating method during operation. In this type of plating method, 20 200426253 contact (CC) cover will be made first. The CC cover includes a supporting structure on which a pattern is adhered or provided. Compliant conformable dielectric material. The conformable material of each cover will be based on the specific cut of the material to be plated. At least one CC cover is required for each specific cross-section pattern to be plated. 5 The support of a CC cover is typically a plate-like structure made of metal, which is selectively electroplated and is to be plated. The material of the plated cloth will be dissolved by it. In this typical method, the support will be shaped like an anode in an electroplating process. In another variation, the support may be a porous or perforated material. In a plating operation, the material to be deposited will be moved from the anode at a distance of 10 to a deposition surface through the perforations. In any of the above examples, the CC cover can share a common support, which is used to plate multiple layers. The pattern of the conformable dielectric material can be placed in different areas of a single support structure. When a single support structure contains multiple plating patterns, the entire structure will be considered as a CC cover, and individual plating The cloth cover can be regarded as a “secondary cover.” In this application, 15 this difference is only when a specific point is to be made. In preparation for the selective deposition of the first operation, the The conformable part of the CC cover will be aligned and pressed Against the selected portion to be deposited on the substrate (or a previously formed layer or a previously deposited portion of a layer). The CC cover and the substrate are pressed together in a way to make the CC cover The electroplating solution will be contained in all the openings in the compliant portion of the 20. The compliant material of the CC cover contacting the substrate will form an electrodeposition barrier, and the openings in the CC cover will Fill the plating solution, so when an appropriate voltage and / or current is supplied, it will form a contact part (which can be transferred from an anode (such as the CC cover support) to the substrate) A cathode path is formed during operation. 9 200426253 An example of a CC cover and a CC cover plating method is shown in Figures 1 (a) to 1 (c). Figure 1 (a) shows a CC cover 8 Is a side view of a compliant or flexible (eg, elastic) insulator 10 patterned on the anode 12. The anode has two functions. Figure 1 (a) also shows that a substrate 6 is separated from the cover 8. One of the positive poles functions as a support material for the patterned insulator 10 to maintain its integrity and alignment, as the profile of the pattern can be very complex (such as an isolated "island" containing many insulating materials). Its other function is to serve as the anode for this plating operation. The CC cover plating method will selectively deposit material 22 on a substrate 6, which simply presses the insulator against the substrate, and then deposits the material through the pores 26a, 26b and the like in the insulation 10 , As shown in Figure 1 (b). After deposition, the CC cover is separated from the substrate 6 (preferably non-disintegratingly), as shown in Figure 1 (c). The difference between the CC cover plating method and a "perforated cover" plating method is that the cover material of the perforated cover plating method is disintegrated from the substrate. Like the perforated cover plating method, the CC cover plating method also selectively deposits the material on the entire material layer at the same time. The plated area may consist of one or more isolated plated areas, which may belong to a single structure to be manufactured, or to multiple structures to be made simultaneously. In the CC coating method, since individual covers are not intentionally damaged, they can be repeatedly used in multiple coating operations. 20 Another example of the CC cover and the CC cover plating method is shown in Figures 1 (d) to 1 (f). Figure (d) shows that an anode 12 'is separated from a cover 8' which contains a patterned conformable material 10 'and a support structure 20. Figure (d) also shows that the substrate 6 is separated from the cover 8 '. Fig. 1 (e) shows that the cover 8 'is provided in contact with the base material 6. Figure 1 (f) shows the deposit 22 ', which is caused by directing an electric current 10 200426253 from the anode ir to the substrate 6. Figure 1 (g) shows that the deposit 22 remains on the substrate 6 after being separated from the cover 8 '. In this example, an appropriate% solution is placed between the substrate 6 and the anode 12 ′, and an ion current from the solution and / or the anode is guided to the opening through the cover. Where the material is to be deposited on the substrate. This type of enclosure can be referred to as an anodeless INSTANT MASK (AIM) or anodeless conformable contact (ACC) enclosure. ίο Different from the perforated cover plating method, the cc cover bell cloth method can allow the cc cover to be manufactured completely separately from the base material of the desired mineral cloth (for example, the Qin structure to be formed by Xiao Yi can be made in many ways.) It can be made, for example, by photolithography. All covers can be made simultaneously and simultaneously before the structure is manufactured, rather than during and during manufacture. This separate manufacturing can form a simple, low-cost, automated door. P Yttrium's "desktop factory" has a good structure and leaves only any processes that need to be dusty, such as photolithography, which is also done by specific departments. 15 An example of the aforementioned electrochemical manufacturing method is shown in section At 2⑷ ~ 2⑴, the drawings show that the manufacturing method includes the deposition of the first material 2 (sacrificial material) and the first material 4 (structural material). In this example, the frame contains a graph = Material 1G (for example-an elastic dielectric material) and-a support 12 made of a sunken material. The compliant portion of the CC cover is pressed against the substrate 'and there is-the electric fluid 14 Conformable material_Opening__The flow from the power source 18 will pass through the double as the yang And 〇 are also used as the anion_base material solution. The 2nd means that the current self-pass will cause the material 2 in the plating solution, and the material 2 will be selectively transferred from the anode to the cathode. 6. After CC # is used to deposit the first-deposited j 20 200426253 material 2 on the substrate 6, the CC cover 8 is removed, as shown in Figure 2 (b). Figure 2 (c) The second deposition material 4 has been surface-deposited (ie, non-selectively deposited) on the previously deposited first deposition material 2 and the rest of the current US material 6. The anode (not shown) composed of the second material (Out) The overlying deposits produced by the electrical penetration 5 will be transferred to the cathode / substrate 6 by a suitable plating solution (not shown). The bi-material layer 嗣 will be flattened as a whole. Achieve precise thickness and flatness, as shown in Figure 2 (d). After completing this procedure for all margins, the multi-thickness structure 20 formed by the second material 4 (ie, the structural material) will be buried in the first In a material 2 (that is, a sacrificial material), as shown in Section 2 (union 10), the buried structure will be etched away to form the required device, that is, the structure 20, such as 2 (f) shown in Fig. 15 20. Various components of the example artificial electrochemical manufacturing system 32 are shown in Figs. 3 (a) to 3 (c). The system 32 is composed of several sub-systems 34,%, 40, etc. The substrate holding sub-system 34 is shown in the upper part of the 3rd (magic to 3 (magic) figure, and contains several components: ⑴-carrier 48, (2) a metal substrate 6 on which a layer of material will be deposited. And (3)-the linear slider 42 can move the substrate 6 up and down relative to the carrier 48 in response to the driving force from the actuator 44. The secondary system: 34 also includes-the indicator 46 can measure the substrate The vertical position variation ^ can be used to set the material layer thickness and / or deposition thickness. The n system also includes the feet 68 of the carrier 48, which can be fixed intactly on the secondary system%. Μ The CC cover secondary system 36 It is shown in the lower part of Figure 3, and it contains several components: ⑴-CC cover 8 is actually composed of a plurality of CC covers (that is, the secondary cover) which share a common Cem pole i2. 54, the precision precision platform 56 ', the frame 72 on which the feet 68 of the secondary system 34 can be fixed, and (;) II 12 200426253 the tank 58 can hold the electrolyte 16. The secondary systems 34 and 36 also contain appropriate An electrical contact (not shown) can be connected to an appropriate power source to drive the CC cover plating process. The overlay deposition system 38 is shown in the lower part of Figure 3 (b) and contains several components: 1) An anode 62, (2)-the electrolytic cell 64 can be used for containing the plating solution 5 66, and the frame 74 can be provided with legs 68 of the secondary system 34. The secondary system 38 also contains appropriate electrical contacts (Not shown) The anode can be connected to an appropriate power source for driving the overlay deposition process. The planarization sub-system 40 is shown in the lower part of FIG. 3 (c), and includes a polishing plate 52 and an attached operation. And control system (not shown) for planarizing the deposit 10. In addition to the above, the No. US patent 6027630 shows that this plating method can also be used in combination with insulating materials. In particular, it shows that although the disclosed plating examples use two metals, there are many materials such as polymers, ceramics, and semiconductor materials, and any number of metals. Individual processes that occur during the manufacturing process are deposited. It shows that a thin plating base can be deposited, for example, by sputtering on an insufficiently conductive deposit (such as an insulating layer) for subsequent plating. It also shows that a variety of support materials (i.e. sacrificial materials) can also be included in the plating elements, with the support materials being optionally removed. 20 Another method of making microstructures from electroplated metal (that is, using electrochemical manufacturing techniques) was disclosed in Henry Guckel's No. In U.S. Patent No. 5,190,637, it is entitled "Method for Manufacturing Microstructures by Multilevel Deep X-Ray Lithoscopy and Sacrificial Metal Layer". This patent discloses a method for fabricating a metal structure using mask exposure. A first layer of main metal will be plated on an exposed plating base. 13 200426253 Fills the gap in a photoresist, the photoresist will be removed, and a second metal will be plated on the first layer and plated. Seat. The exposed surface of the second metal is milled down to a height while exposing the first metal to form a flat and uniform surface extending through the first and second metals. The formation of a second layer of 5 can be accomplished by arranging a photoresist layer on the first layer and repeating the process used to make the first layer. This process is repeated until the entire structure is formed and the second metal is etched away. The photoresist can be formed on the plating base or the previous layer by casting, and the gap in the photoresist can be formed by exposing the photoresist through X-ray or UV radiation through a patterned mask. 10 In this field, the combination of conductive materials, dielectric materials, semi-conductive materials, other materials, treated materials, and / or structural materials in the EFAB process still needs to be strengthened. Also, there is a need in this field to combine electrochemically manufactured structures with dielectric substrates or substrates, active substrates or substrates (substrates or substrates with elements capable of interacting with the structure), or As the purpose other than the base of the 15 structure), and / or the base or base material containing the modeling structure. There is also a need in this field to improve the adhesion between such substrates or substrates and electrochemical manufacturing structures. There is also a need in this field to expand the range of capabilities to expand the range of materials and processes that can be used to make the desired structures, including their substrates or substrates. [Summary of the Invention] Summary of the Invention One of the various aspects of the present invention is to expand the capability of electrochemical manufacturing methods to enhance the electrochemical manufacturing technology, to meet the structural and functional requirements of different uses, and to expand the technology. Potential uses. 14 200426253 The other objects and advantages of the various aspects of the present invention will become clearer after the professionals refer to the contents. Aspects of the present invention, whether described herein or inferred from the content, can be used alone or in combination to achieve any of the foregoing objectives; or they may not be able to achieve any of the foregoing objectives 5, but However, it can achieve some other purpose inferred from the content. Not all of these objectives can be achieved by any single aspect of the invention, although a single purpose may be related to some aspects. A first aspect of the present invention provides an electrochemical manufacturing method for manufacturing a 3D structure from a plurality of adhesive layers, including (A) selectively depositing at least 10 parts of a material layer on a temporary substrate. The temporary substrate may include previously deposited materials; (B) manufacturing a plurality of layers and making subsequent layers immediately adjacent to and adhering to the previously deposited layers, and the manufacturing includes repeating operations (A) multiple times; (C) during fabrication After the plurality of layers, a structural substrate containing a dielectric material is fixed to at least a portion of a layer of the structure, and at least a portion of the temporary substrate is removed from the structure. 15 The second aspect of the present invention provides an electrochemical manufacturing device with a 3D structure made of a plurality of adhesive layers, including: (A) —the device can selectively deposit at least a part of at least one layer on On a temporary substrate, the temporary substrate may include previously deposited materials; and (B) —the device may manufacture a plurality of layers such that subsequent layers are immediately adjacent and adhered to the previously deposited layers, where the manufacturing includes repeating 20 operations ( A) multiple times; (C) a device can fix a structural substrate containing a dielectric material to at least a portion of a layer of the structure, and remove at least a portion of the temporary substrate from the structure; And (D) —The computer can be programmed to control the contact device, conductive device, separation device, fixed device, etc., so that the fixed device can be operated after most layers of the structure are formed. 15 200426253 A third aspect of the present invention provides an electrochemical manufacturing method for making a 3D structure from a plurality of adhesive layers, including: (A) selectively depositing at least a portion of a material layer in a first temporary On the substrate, the first temporary substrate may include a previously deposited material; and (B) manufacturing a plurality of layers such that subsequent layers are immediately adjacent and adhered to the 5 previously deposited layers; and (C) fixing a A second temporary substrate (which includes a dielectric material) is on at least a portion of a layer of the structure, and at least a portion of the first temporary substrate is removed from the structure, and then a structural substrate is fixed to the structure At least a part of a layer will at least partially overlap the position where the first temporary substrate was once fixed. 10 A fourth aspect of the present invention provides an electrochemical manufacturing method for manufacturing a 3D structure from a plurality of adhesive layers, including: (A) selectively depositing at least a portion of a material layer on a sacrificial substrate The temporary substrate may include previously deposited materials; (B) manufacturing a plurality of layers such that each subsequent layer is immediately adjacent to and adhered to the previously deposited layer; wherein the manufacturing includes repeating operations (A) a plurality of times; After 15 layers, a structural substrate (including most materials and / or a patterned structure) is fixed to at least a part of a layer of the structure, and at least a part of the temporary substrate is removed from the structure. A fifth aspect of the present invention provides an electrochemical manufacturing method for manufacturing a 3D structure from a plurality of adhesive layers, including: (A) selectively depositing at least a portion of 20 of a layer on a first temporary substrate On the material, the first temporary substrate may include previously deposited materials; (B) manufacturing a plurality of layers such that subsequent layers are immediately adjacent and adhered to the previously deposited layers; and (C) after forming a plurality of layers, a second A temporary substrate (which includes most materials and / or a patterned structure) is secured to at least a portion of a layer of the structure, and at least a portion of the first temporary substrate is removed from the structure. Structure base # At least one Qiu injury fixed to the structure, which at least partially overlaps the first temporary base material once fixed. "The sixth aspect of the present invention provides a method for making batches. 々, _ xi section 3 Π Electrochemical manufacturing method of at least one section, at least one section of which is made of%, / Λ ', made of most adhesive layers, the method includes: (Α) The multi-segment junction, at least one adjacent scale, includes: (1) selectively depositing a layer At least-part of the substrate may include previously deposited materials; (2) manufacturing a plurality of seals on the a substrate, where a layer is required to make a sound; immediately adjacent to and adhered to the previously deposited layer, wherein the manufacturing package, '贝耶 ^ Repeat the operation (1) a plurality of times, (B) Provide at least one additional part of the multi-segment structure # · ίο 15 / Κ 又' (C) Fix this to ν — the segment is fixed to the at least As soon as a section is added to form the multiple units, more aspects of the present invention will become clearer after the professionals refer to the contents. Other aspects of the invention may include the second combination of the invention described above, and / or various features of one or more embodiments. Other aspects of the invention may include the means for implementing one or more of the above described inventions. These other aspects of the present invention can provide the above-mentioned various aspects, different combinations of heart and water, and other structures, structures, functions, relationships, and manufacturing methods that are not specifically described above. BRIEF DESCRIPTION OF THE DRAWINGS Figures 1 (a) to 1 (c) schematically show side views of different stages 20 of a CC cover plating method; and Figures 1 (d) to US) schematically show a use Side view of the different stages of the plating method of CC covers of different collar types. Figures 2 (a) to 2 (f) schematically show side views of different stages of an electrochemical manufacturing method for forming a specific structure, in which a sacrificial material is selectively deposited and a structural material is covered Surface deposition. 17 Figures 3 (a) to 3 (c) are schematic side views of various sub-combination examples that can be used to manually perform the electrochemical production methods of 2 (a) to 2 (0). Figures 4 (a) to 4 (i) The figure schematically shows that the first layer of a structure is made by using an adhesive cover plating method, in which an overlay deposition of a second material covers the openings of the first material 5 between the deposition positions and the first material. Itself. Fig. 5 shows a flowchart of the basic operation of a preferred embodiment of the present invention. Figs. 6 (a) to 6 (c) show an example of a structure created according to the preferred embodiment of the present invention, where Figures 6 (a) & 6 (b) show two different perspective views of the structure, and Figure 6 (c) shows a side view of the structure. 10 Figures 7 (a) to 7 (〇) It shows the procedures of making the structures of Figs. 6 (a) to 6 (c) from a plurality of adhesive layers according to a preferred embodiment of the present invention. Figs. 8 (a) to 8 (d) tf One of the variations of the last layer of the structure shown in Figures 6 to 6 and how the permanent substrate is mated to the material layer. Figures 9 (a) to 9 (e) show one embodiment when the present invention is implemented 15 steps of the time. Figure 10 provides the basic operation of the embodiment of Figures 9 ~ 9 The flowcharts of the present invention are shown in Figures 11 (a) to 11 (a) to 11 (a) to 11 (a), which show the operation steps when implementing one embodiment of the present invention. 20 202® provides a flowchart of the basic operation of another embodiment of the present invention. (a) to 13 (c) schematically show the process of transferring a structure 702 from a first substrate 704 to a second substrate 70. Figures 13 (d) to 13 (e) 18 200426253 Figures M (a) to M (c) schematically show the structure of a fixing layer that can modify one structure of a structure. It contains the groove shown in Figure 13 (d). Figures 15 (a) to 15 (f) schematically show that a manufacturing method can modify the structure of a fixed layer of a structure to include a buckling groove to strengthen it. The structure and the substrate are connected to each other. I: Detailed description of the preferred embodiment of Embodiment 3 1 (a) ~ 1 (g) '2⑻ ~ 2 (f)' 3⑷ ~ 3 (c) Different characteristics of a conventional electrochemical manufacturing method. Other electrochemical manufacturing techniques were disclosed in the above-mentioned US Patent No. 6,602,763, each previously published material, and other attached patents and patent applications. In the case, there are other methods that can be shot by various methods described in such public information, patents, and patent applications, or professionals can be inferred by the contents disclosed in this case. All: and other technologies can be used here The various embodiments of the disclosed various aspects of the invention are combined to produce a better embodiment. There are also other embodiments that can be derived from the combination of the various embodiments disclosed herein. ^ Brother 4⑷ ~ 4⑴ Stages of making single-layers in a multi-layer process' where a second metal is deposited on a first metal and in the first metal's openings, and its deposits form part of the layer Serving. In Fig. 20 ', it is a side view showing a substrate 82 on which a patternable photoresist 84 is formed as shown in Fig. 4 (b). In Fig. 4 (c), a photoresist pattern is formed by curing, exposing, and developing the photoresist. The combination of the light and the pattern results in openings or divisions 2 (a) to 92 (e) f extending from the surface thickness of the photoresist to the surface 88 of the substrate 82. In the fourth figure, —metal (19 200426253 nickel) has been plated in these openings 92 (a) ~ 92 (c). In FIG. 4 (e), the photoresist has been removed from the substrate (for example, chemical peeling), and the area on the substrate 82 that is not covered by the first metal 94 is exposed. In Figure 4 (f), a second metal 96 (such as silver) has been plated to cover the entire five exposed portions of the substrate 82 (which is conductive) and the first metal 94 (also conductive). )on. Figure 4 (g) shows that the first layer of the structure has been completed. It is made by flattening the first and second metals to a height to expose the first metal and set the thickness of the first layer. . In Figure 4 (h), the steps in Figures 4 (b) to 4 (g) are repeated a number of times to make a multilayer structure as shown in Fig. 4, where each layer contains two materials. For most purposes, one of these two materials will be removed as shown in Figure 4 (i) to form a desired 3D structure 98 (such as a component or device). Although the embodiments disclosed are mainly focused on the conformable contact cover and the cover plating operation, the various embodiments, variations, and techniques disclosed can also be applied to the near-body and cover plating operations (ie, using the Waiting for the operation of the cover body, the cover body 15 will selectively cover the substrate at least partially because it is close to the substrate, even if it does not touch the substrate. Non-conformable cover and cover plating operations (that is, the contact surface is not sufficient) Flexible and compliant covers and operations based on such covers), and bonding covers and covers plating operations (ie, covers bonded to a substrate and operations using such covers, on which Selective deposition or etching will occur in the untouched areas). Fig. 5 is a flowchart showing the basic operation of a preferred embodiment of the present invention. The process begins at operation 102, which provides a substrate to which a subsequent layer of deposited material is added. This substrate is typically made of a conductive material and can be electrodeposited thereon, but it can also be a seed layer of a dielectric material on which a conductive material has been deposited. 20 200426253 The process continues to operation 104, where a layer is deposited on the substrate or a previously formed layer that has been placed on the substrate. According to some embodiments of the present invention, the deposited layer will contain two or more materials, one or more of which will be patterned to give a desired shape to the structure to be made, and others One or more materials will be shaped like sacrificial materials which will be removed from the structure after the layer has been manufactured. A preferred embodiment of the present invention is used to separate the structure from the substrate (that is, the temporary substrate) made by the structure, and it is preferable to make the substrate have a different structure from the sacrificial material. Materials, so in some embodiments, the first or more 10 layers deposited on the substrate may be composed of only the sacrificial material. Also, in the preferred embodiment of the present invention, since the substrate on which the structure is to be fabricated is not a permanent substrate to which the structure is to be fixed, it is preferred that in some embodiments, the (the structure is The first layer is the last layer of the structure with respect to the permanent substrate system, and the last layer deposited is the first layer with respect to the permanent substrate system 15. In other words, in some embodiments, the layers of the structure are preferably deposited in the reverse order. The electrochemical manufacturing method used may be similar to those shown in Figures 1 (a) to 1 (c) and 2 (a) to 2 (f), or in No. 6027630 Another method disclosed in the U.S. patent, or one method described in each of the aforementioned publications, or one method described in one of the patents or applications in the attached 20 patent and application form, or A method of combining the various methods described in these published materials, patents, and applications, or a method known or inferred by professionals. Of course, these structural parts can also be made by other 3D molding or manufacturing methods. After depositing a layer, the process proceeds to block 106, which checks 21 200426253 to see if the last layer of the structure has been made (ie, the layer that will contact the permanent substrate in some embodiments of the invention) . If the answer is "No", the process will loop back to operation 104 and proceed with the deposition. If the answer is yes, the process moves to operation 108. 5 This operation 108 involves attaching a permanent substrate (such as a dielectric material) to the last deposited layer of the structure. The fixing can be achieved by an adhesive, such as a pressure-sensitive adhesive, a heat-sensitive adhesive, or a radiation-curable adhesive (provided that the substrate can transmit appropriate radiation). The adhesive can be applied in a variety of ways known to professionals (e.g., coating, spin coating, spraying, etc.). The fixation can also be accomplished by non-adhesive bonding technologies, such as surface welding, sintering, welding, ultrasonic fusion, and vibratory joints. After the permanent substrate and the deposition material layer are fixed together, the process proceeds to operation 110, in which a permanent substrate and a layer are separated from the temporary substrate, and all the sacrificial materials are removed. If one or more layers of sacrificial material are interposed between the temporary substrate and the structural material, or if the temporary substrate is attacked by the sacrificial material or by an etchant that is used to selectively separate the sacrificial material and the structural material When other materials are used, the separation process can occur as a natural part of the removal process of the sacrificial material. In a variant embodiment, the three tasks in operations 108 and 110 can be performed in 20 different orders, for example: (1) first connect and then separate and remove the sacrificial material; (2) first connect, then separate, and then Removal; (3) Simultaneous separation, removal and reconnection; (4) Removal, reconnection, and separation. Figures 6 (a) to 6 (c) show a structural example (such as a switch) made according to a preferred embodiment of the present invention. The two different perspective views of this structure are shown in Fig. 6 (a) and 6 (b), and a side view is shown in Fig. 6 (c). The overall structure 122 can be seen in FIG. 6 (a), and the structure is fixed to the permanent substrate 124. Figure 6 (b) shows a bucket wound when the structure 122 has been fixed to the permanent substrate 124, but it can be seen that when the structure is manufactured and fixed to a temporary substrate such as 7 (hook 5 to 7 ( n) The material layer process not shown in the figure. As shown in Figure 6 (c), the structure is composed of ten layers 201 ~ 210. 10 15 20 Figures 7 (a) ~ 7 (0) show manufacturing The process states of the structures shown in Figures 6 (a) to 6 (c). In this embodiment, the subsequent layers will be fabricated and glued to the bottom of the previous ^ build-up layer. Except as shown in Figure 7 (b) In addition to the sacrificial material, when the structural material and the sacrificial material on the target deposited layer are shown, the structural material will be fully shown 'and the sacrificial material is only shown on the outer wheel. On a currently deposited layer, any The order of the deposition structure # material and the sacrificial material is acceptable. In a variant embodiment, 'the layers can be deposited on top of each other or side by side. In this application' unless the content requires—different layers, when-deposition is shaken When the description takes place in the pre-sediment, it is not necessary to make an absolute conclusion about the direction of the material layer, but only the relative relationship of the deposition sequence should be noted. Figure 7 shows the process. A temporary substrate 212 is started. Section 7_ shows that the temporary substrate will be laid out—a coating of a sacrificial material or a first deposition layer 2U. The sacrificial material layer 2U may allow this at a later step in the process The structural material is separated from the temporary substrate. Of course, in actual falling, the 'y number of layers 211 with t can also be made, or its thickness can be adjusted so that it can be easily separated in the subsequent steps. Figure 2 of Figure 7 ―The structural oil of the layer 210 is patterned by a dashed line, which represents the boundary of the sacrificial material that also existed. 23 200426253 ^ 7 (d) J 7 (1) The principals of each successive deposition layer to 201, and the pattern of the structural material 209 to 201, especially the deposition layer are also shown along with the outline of the material. The previous deposition layer is shown as a material shell. ^ And there is no patterning difference between the structural material and the sacrificial material. (1) The figure does not show that the permanent substrate 200 is fixed to each of the materials 2001 ~ _, the release layer 2m, and (Figure 3) The components of the partially shaped coin structure are shown as solid squares in the second figure, but the figure 7 does not show the sacrificial material and permanent The base material is transparent, so you can see the shape of each layer and the structural material 2 () 1 • ~ 21 (). Ίο 15… Figure 7 (G) shows the released structural materials 201, ~ 210, It is adhered to the water-based substrate 200. The prefecture is described as transparent, but it can be transparent (such as glass) or opaque, and some applications may require transparent materials (such as when the structure contains -scan The mirror can accept the radiation source that passes through the substrate. When the black substrate is transported back, the temporary substrate can be removed with the sacrificial material. (M) Selective engraving, which is invasive to animal materials (such as copper), but will not disintegrate structural materials (such as supplementary animal materials. Tinctures can include-anti-point tincture or similar to ensure that they are not Attacks the structural material. 20 Figs. 8 (a) to 8 (d) show examples of the modification of the last layer of the structure of Figs. 6 (a) to 6 (c) 'and how the permanent substrate is compounded with the modifier of the material layer. Figure 8 (a) does not show that the last layer contains only the structural material 201. Figure 8 (b) shows that the permanent substrate is not only made or bonded to the bottom of the last layer, but also on the side of the last layer, so the structural material of the last layer will become at least part Buried in 4 substrates. Figures 8 (c) and 8 (d) show a two-dimensional view of the formed structure. 24 200426253 ίο. As shown, the structural material 201 is buried in the substrate, so only nine out of ten original structural material layers extend on the surface of the permanent substrate. The structural material 201 can be achieved in a variety of ways by being surrounded by the substrate. For example, instead of the base material being in the form of a prefabricated sheet to be bonded to layers such as "Hai, it must also be in the form of a flowable material that can be molded to surround the structural material ' And has a surface that extends a desired thickness beyond the last layer of structural material. In another example, 'the substrate can still be sheet-shaped and adhere to the last layer of structural material 205', but the sacrificial material has not been deposited on the last layer or the portion of the sacrificial material has been removed, It can be filled-epoxy resin or other Π, 动 / curable materials. The permanent substrate will be positioned, and the hardening of the resin or other material will not only fill the area around the feet of the structural material, but also cause adhesion between the layers and the substrate. 15 The above embodiment also has various modifications. Even when the substrate on the side of the last layer is not formed, it can still be used-a moldable material, 20: unlike-a piece of material and the substrate is made of a temporarily flowable material. The contact pads and vias can be made of the structural material, and they can be extended to the desired position on the surface of the substrate, or they can be encapsulated by the material of the substrate except for the required contact points. The selective engraving of the sacrificial material may be performed before the water-based substrate is connected or fabricated. Each layer can be engraved to a depth less than one layer thickness or greater than a layer thickness. In some embodiments, the engraving depth may allow a portion of the structural material to extend completely through the substrate to be covered, thereby forming a protrusion from the bottom of the wire. In the embodiment where the substrate extends through the bottom of the substrate, and when the molding is not performed, the "the base" can be flattened until 25 200426253 when the structural material is exposed. The base The material does not have to be flat, and its lateral extension does not need to correspond to these layers. If the part is etched to a depth of more than one layer thickness, it is best that the pattern of the structural material can maintain a fixed pattern ^ but maybe The deepest layer will be exposed by the 5 part etch. This will help ensure a more uniform etch depth, as the sacrificial material will not be masked by the extended area of the structural material. However, at this etch depth In embodiments that are less important or that it is expected that a different structural pattern will result in a desired etch pattern, the patterning of the structural material will not necessarily have this limitation. 10 In some embodiments, unlike the temporary substrate Instead of the permanent substrate being disposed on the opposite side of the deposition layers, the permanent substrate may also be disposed in an orientation perpendicular to the temporary substrate. In other words, the permanent substrate may also be disposed in the majority Sedimentary In some embodiments, the permanent substrate is not fixed on the opposite side of the laminated phase 15 to the temporary substrate. 'The temporary substrate will be removed first and the permanent substrate will be adhered. In its position. This allows the temporary substrate or its topmost surface to be made of a material that can be selectively etched or removed from such layers, preferably without damaging the layers. Structural material or sacrificial material. After removing, the bottom layer of the structure will be exposed, and the 20 permanent substrate (such as dielectric substrate) will be fixed to it. When the permanent substrate is needed When the material is set in some positions occupied by the temporary substrate, in some embodiments, it may be necessary to first set a second temporary substrate on the opposite side of the stack relative to the first temporary substrate. Then the first temporary substrate can be removed, then the permanent substrate is fixed, and then the second temporary substrate is removed at the time of the second temporary 26200426253. In other embodiments, the permanent substrate can be disposed in the bump layer. Opposite the opposite side of the substrate (on which the layers are made), and the substrate can be protected In some embodiments of the present invention, the permanent substrate can be replaced by some other material instead of a dielectric 5 material. For example, the permanent substrate can be made of a conductive material and can be easily Although the term "permanent material" is used here, it should be understood that it does not mean that the permanent material must be able to exist over the entire life of the structure, but if it forms part of the structure, at least It should be able to be used for certain parts of the structure. In some embodiments of the present invention, sacrificial layers may also not be used when depositing the stacks. In some embodiments, the fabrication of the layers This can be accomplished by single or multiple selective depositions, and possibly one or more overlying depositions and one or more planarization operations. 15 Certain embodiments of the present invention can provide structures that are electrochemically fabricated ( For example, using conformable contact cover plating technology or adhesive cover plating technology), it is fixed on the substrate that may contain active components. This is shown in the embodiment of Figures 9 (a) to 9 (e), in which an electrochemically fabricated structure is fixed to a piezoelectric element, and the two are combined to form an operable pressure.电 装置。 Electric device. 20 In Figure 9 (a), a structure 302 includes a structural material 304 and is surrounded by a sacrificial material 306. The structure 302 is preferably made of a plurality of adhesive layers by an electrochemical method. The structure 302 is fabricated on a release material 308 and is fixed to a substrate 312. The release material 308 may be the same as the sacrificial material 306 ', or it may be another material that can be separated by etching or melting (for example, a 27 200426253 agent) or removal. The release material 3008 can be placed on the substrate 312 before the structure 302 can be electrochemically manufactured, or it can also be made from one or more of the first deposits of the electrochemical process. . The substrate is typically a conductive material, but in some embodiments it can also be a dielectric material and can be covered with a seed layer of a conductive material. In Figure 9 (b), the '-prefabricated element or component cut system is shown above the structure. The prefabricated member 322 is ready to be used in the electrochemical fabrication structure 302. The component 322 is fixedly mounted to the device substrate 32. The device substrate 324 usually forms the final substrate of the device. The device is a composite device of the structure: 322 and the structure 302 of the structure. Most of the time, the device substrate 324 can adopt any desired properties (for example, it can be H-dielectric, -transparent material, or -flexible material, etc.). In this example, the device substrate 324 is a dielectric, so its power supply is isolated. At the Fμ ^ 15, the M is positioned on the substrate 324, and the -metal element 326 will be patterned. "The area with the piezoelectric material 328 on it will be patterned, and the piezoelectric material will have -adhesive 33〇 (if If necessary, it can be conductive.) It will be converted into a case. A suitable "spoon adhesive should have good adhesion to the structural materials of the structure. The raw metal 7G element 326 will be provided and used as an electrode to Actuate 20 / [package material 'sub-as-circuit to connect the electrode to a power source. 'In Fig. 9 (c), the prefabricated member 322 is adhered to the structure by the adhesive 33. In Fig. 9 (d), the release material has been removed. In the 9th (e) round, the 4 sacrificial material 3G6 has been removed by the structural material 3Q4, and then the component 33 is starved. The structure is released to form the completed device. It is said that the component 3 ° 4,322 and the device base Material 324 and the like. 28 200426253 Fig. 10 is a flowchart showing the process steps of the embodiment of Figs. 9 (a) to 9 (e). In Figure 10, the process starts at two points shown in blocks 402 and 406. Block 402 provides a substrate that is separable from a component formed thereon. The substrate and the member can be separated because the substrate has a release layer, or because a release layer will be provided on the substrate. Block 406 provides a second component that will have a desired shape or be made from a variety of desired materials. The second member will have a surface energy that can be fixed to the surface of the first member provided by block 402. Block 404 is a layer or a layer formed on the substrate to form the first component (ie, a part) of one of the devices to be manufactured. In making the first component, the component may be partially surrounded by a sacrificial material, and the final sound of the sacrificial material is removed by the component portion of the layer. The first member will have a surface that can be bonded or fixed to the second member. The two blocks 404 and 406 are the starting points for the operation of block 208. 15 In block 408, one or both of the first and second members will be prepared to be bonded to each other by attaching an adhesive to at least one of its joining surfaces. Of course, in the changing embodiment, the block is also a part of the process. For example, in some embodiments, an adhesive may be part of the second component provided. 20 The process will move from block 408 to block 4 丨 0, where the two components will be glued to each other. This bonding can be achieved using pressure-sensitive adhesives, hot-melt adhesives, or other means known to professionals. The process flow moves to block 412, where the first component is separated from the substrate to which it is attached. 29 200426253 The process moves to block 414, where the first component is separated from any sacrificial material of the non-retained portion of the final device to be made. The process then moves to block 416 where additional manufacturing operations may be performed or the device released during the operation of block 414 may be used. 5 In a variant embodiment, the order of operations of blocks 414 and 412 may be reversed. In still other embodiments, the operations of the two blocks 414 and 412 may be performed at the same time. In still other embodiments, the operations of blocks 412 and / or 414 may be performed between the operations of blocks 408 and 410. After reading this article, professionals will be able to easily infer various other variations. 10 In some embodiments of the present invention, the substrate to be fixed may be a passive component, but the structure to which it is fixed may have an electrochemical manufacturing portion and a portion made by other deposition or patterning techniques. Serving. One or both of these parts may include active components. This system is shown in the embodiment of FIGS. 11 (a) to 11 (j). Figures 11 (a) to 11 (j) show another modified embodiment of the present invention. The system 15 uses the same operation to make a plurality of layers, and then uses different operations to make an added part of a structure. . Figure 11 (a) shows a side view of the first structure 502 for illustration, which is similar to Figure 9 (a). In FIG. 11 (b), a piezoelectric material 528 has been deposited on the top surface (ie, the last layer) of the structure 502, and a photoresist 520 has been deposited on the piezoelectric material 20 528. In Fig. 11 (c), a desired pattern of one of the piezoelectric materials 528 is shown. The patterning of the piezoelectric material can be accomplished as follows: first pattern the photoresist 520, and then use it as a pattern to selectively etch the piezoelectric material. In a variation, for example, the piezoelectric material may be patterned by a lift-off 30 200426253 method. Figure 11 (d) shows an optional step for forming the surface of the part forming device horizontally. A dielectric material 5 3 2 is used to fill the gap caused by the etched M electrical material. An even height. In some variations, it may be desirable, or at least better, to planarize the combined dielectric and piezoelectric material layers. Figure 11 (e) shows the deposited structure of the next layer, which will provide a metal 534 on top of the piezoelectric and dielectric materials. Figure 11 (f) shows the result of patterning the deposited metal. The pattern of the metal 10 is selected to form the electrodes of the piezoelectric element and an interconnecting track. The patterning of the metal can be performed in various ways, for example, it can be performed in the manner described above for patterning the piezoelectric material. Figure 11 (g) shows the result of filling the voids in the metal layer with a dielectric material 536 (which may be the same as the dielectric material 532). The filling of the voids can also be performed using the same method as filling the voids of the 15 piezoelectric material layer. For example, a material can be deposited in large quantities, laid out, cured, and then planarized to produce a desired thickness and uniform layer. In Fig. 11 (h), a device substrate 538 is coated on the metal and the dielectric layer. The substrate can have any. The required characteristics are in this case a dielectric. In Figure 11 (i), a release material 508 has been removed. 20 Finally, in Figure 11 (j), a sacrificial material 508 has been removed to form a release device that can be subjected to additional processing operations or used. In a final functional device, a connector passing through the structural material 304 in FIG. 9 (e) or 504 in FIG. 11G) can be used to form the second electrode of the piezoelectric element so that Make a final device. 31 200426253 Fig. 12 is a flowchart showing the process of the embodiment of Figs. 11 (a) to 11 (j). The process begins at block 602 where a substrate is provided and a device is fabricated thereon. The device will eventually be transferred to a different substrate, which may already have a release layer, or an appropriate release material may be added when the first or more layers are electrochemically fabricated (5 Such as sacrificial material). Block 604 uses a first method to make one or more layers (e.g., made by electrochemistry) that will form part of the device and can be surrounded by a sacrificial material. Block 606 further uses at least one different deposition method to further construct and pattern the structure. In some embodiments, additional electrochemical manufacturing operations will be used to complete the structure, which will include the unreleased device. Block 608 places an adhesive on the last layer of the formed structure and / or a substrate to be bonded to the structure. The use of the adhesive may or may not be necessary depending on the constituent materials of the substrate and the method used to join. 15 Block 610 is to make a substrate on the last forming layer of the structure, or to adhere the substrate to the last forming layer. Block 612 separates the structure from the original substrate from which it is made. Block 614 separates the structure from any sacrificial material that is not a reserved part of the final device. 20 Block 616 performs any additional manufacturing operations or uses the device. Using the flowchart of FIG. 10, various changing operations can be implemented, and the order of the operation blocks can be changed. Two additional embodiments are shown in Figures 13 (a) to 13 (e), 14 (a) to 14 (c), and 15 (a) to 15 (f). The two additional embodiments show a substrate conversion technology, which includes increasing the surface area (junction) between the structure and the bonded substrate 'or making a fine structure in the structure that can be fastened to the exchange substrate. . Figures 13 (a) to 13 (c) illustrate a method for converting a structure 702 from a first substrate 704 to a first substrate 706, wherein the structure is between the structure and the second substrate The contact area is flat, so there is no increased surface area or fastening parts to help improve its adhesion. Figure 13 (d) shows a modified structure 702 and a modified substrate 706, in which a notch is formed on a flat surface of the structure, and in the replacement substrate or an adhesive layer The convex part can be embedded in the grooves to strengthen the adhesion between the structure and the substrate. Fig. 13 (e) shows a modified structure 702, bonded to a modified replacement substrate 706 ", wherein the structure includes a groove with an undercut, and the replacement substrate or an adhesive The material will be placed in the structure so that the structure and the substrate can be strengthened by mechanical fastening between them. The modified structure of Figure 13 (d) can be implemented in many different ways. One of them The manufacturing method is shown in Figures 4 (a) to 14 (b). Figure 14 (a) shows that the last two layers of the edge structure 714 and 714 have been covered, and the material layer 714 has not been fastened to a substrate. Brother M shows another layer of the two layers 712 and 714, in which the layer 714 'has been modified and contains holes, grooves, gaps, etc. provided in the structural material 718. These holes and grooves can be filled. A sacrifice material is talked about as part of the system. Figure 14 shows the process after the sacrifice material of buckle 4, shown in Figure 14 (b), is removed. In some cases In the embodiment, the openings in the material layer 714, may be formed by modifying the material instruction of the layer during the material layer system 200426253. Or, in the other embodiment of Example 7 The opening of the material layer 714, can be borrowed by the user after the manufacture of the layer is completed; the position 1 needs to be engraved with holes in the material layer 714. Engraving = ❹contact cover or adhesive cover. If there is no concern that the sacrificial material will be removed by the structural structure, the secret removal of the sacrificial material can be performed by a large amount. Or 'the silver carving can also use one or to complete = at least one mask can cover The area that shields the sacrificial material from being removed will cover the structural material. After the openings are named in the material used for bonding'—adhesive or flowable base material, it can be laid, ίο 15 20 Therefore, the substrate is connected to the structure or the solid ground structure (this will adhere) ° == In the embodiment 'It is best to set the sacrificial material before the bonding operation = the material layer 714 will not be described The outer side area of the structural material part 2 = the order of these adhesion and removal of materials will improve the substrate material: positioning 'and / or may help limit the movement of the adhesive or flowable substrate material into the In the area around the structure =: ling ga, __ outer 嶋 heart Γ: the mouth is made of money, the material may be more tolerant before bonding than after bonding From other embodiments, the rest of the outer area will be ordered before bonding. 'Just because of the heterogeneous structure. Determine.' Heterogeneity-breakage of the flowable base material or the agent. Partially or completely: 2: Large inclusiveness. Correcting the last layer (or the last few layers) of the structure and only the poor material can be based on the cad broadcast instruction of the designer to modify the required structure, or Borrowing-data processing program will perform various b ... ^ operations ⑼ 34 200426253 such as etching or expansion operations, and can be superimposed according to fixed or user-settable parameters (such as fixed grids of fixed positions and sizes). Overlay the structural materials in the correct position of the material layer). The data processing operation can be based on the structural data that has been transferred into the material layer data, or based on the structural material retained in a 3D format 5. Come on. The holding function of the transition zone between the structure of Fig. 13 (e) and the substrate can be obtained in various ways. For example, an etch operation can be used, which has a tendency to reverse the etched material. The reverse cutting can also be the result of pressing a conformable contact cover into the hole being formed. The cover can protect the upper part of the side wall of the 10 holes to a certain depth, and the horizontal An undercut can be formed by etching. These holding functions can also be obtained by modifying the pattern of the structural material on the last two or more layers of the structure, where the contact layer (and possibly one or more additional layers) will have a greater Small openings, but will have larger openings in one or more previously formed layers. The smaller and larger openings of the 15th grade in different layers will be filled with sacrificial material during the layer process. The sacrificial material can be removed after the layer is formed, as described previously in Figures 14 (b) and 14 (c). An example of a method of manufacturing such a retaining portion, an undercut portion, or an interlocking structure is shown in Figures 15 (a) to 15⑴. 20 Figure 15 (a) shows the last five layers of an example of a structure made by an electrochemical manufacturing method, all of which have the same structure. As shown, the structure includes a structural material region 752 and a sacrificial material region 754 on the periphery of the structure itself. Figure 15 (b) shows the last few layers of the electrochemically fabricated structure. The structure of the last two layers has been modified to include openings in its structural material, with 35 200426253 with an undercut or retaining structure. . As shown in FIG. 15 (b), the retaining structures 762 and 764 and the channels 772 and 774 leading to them are temporarily filled with a second sacrificial material, which may be the same as or different from the first sacrificial material 754. . Figure 15 (c) Figure 7F shows that the second sacrificial material in the grooves or retaining structures 762 and 764 and their channels 5 772 and 774 has been removed. Figure i5 (d) does not show that the structure has been covered with an adhesive 774, and a conversion substrate 776 is located above the bonding position. Figure 15 (e) does not show that the conversion substrate w has been lowered to the position and stuck & Not only will the connection between the substrate and the structure occur, but also interlocking will occur between the agent and the structure, and if the adhesive has a better adhesion to the substrate than the structure Characteristics, the overall robustness of the composite shouting material / structure system can be improved. After the 15 (_ * out of the external sacrificial material μ has been removed—the lock method and the method of increasing the surface area can have many variations. I. In these two methods, the height of the transfer or interlocking elements can be changed by one Part of Z extends to the thickness of multiple layers. If you do n’t have money, you can adhere the substrate to the structure—know the openings, and then make it Ruhua. The flowable substrate material can also fill these. 20 In other embodiments, the substrate itself may also include openings or retaining clips to facilitate the grasping of an adhesive or a filler material. In other embodiments, == the retaining structure is not a single element. The buckle between the handle substrate and the structure (=: fine structure, but two or more structural combinations that can produce a buckle shape _ straight holes protruding into the structure at different angles, etc.) 36 200426253 Also implemented in other For example, the two to be fixed may not be a multi-layer structure and a substrate, but include a combination of one or more multi-layer structures—or multiple: or members, which may or may not be multi-layer structures, and Embodiments that may or may not form an interlocking reinforced adhesive structure can be summarized as follows.  ⑴Obtain—the groove of the desired structure; (2) 敎 It contains one or more branches or channels in the last one or more layers, and it can contain grooves or buckles in the tight =: coffee: each layer-or multiple layers. Hold the knot οο ο ⑽ ⑽ made of butterflies on the material; the scales of these channels or retaining holes are said to be '(5) layout-flowable material on the surface with these channels, if a separate substrate to The flowable material is used for bonding, an adhesive, or it can be formed as a curable material and can be formed into a desired beauty material = 15 =: = The _ or curing the substrate material to adhere the correction and the two Structure wheat, a substrate adhered to the structure; and if it needs to be removed, it is difficult to release the structure. The portable substrate is made up of many possible variations. The embodiment additionally contains: ⑴ 20 material to fill the openings, and the outer area of the structure, the heart = only = = material for it; _ knot_ and make-sacrifice material π temporarily fills these openings; and uses a variety of structural materials. These grooves or channels can be of any desired length and they can have different cross sections: two identical = degrees. The grooves or retaining structures do not have to be the same size as the channels, because they can simply be read from the position of the channel 37 200426253, in fact, they can have a smaller wear. Area; (5) there is no need for one-to-one correspondence between each groove and channel; (6) the dimples themselves may have different heights, or be provided at different depths in the structure, or have different Cross-sectional dimensions. 5 In other variant embodiments, instead of the chamfered portion or the holding structure that penetrates into a structural element, it can also form a chamfered buckle groove on the side wall area of the structural material, and these buckle grooves can be filled with a Adhesive or substrate material, and forms an interlocking element when mated with reverse buckle grooves on other parts of the structural material. 10 In some embodiments, a multilayer structure can be manufactured from a "top" layer (the expected last layer), which is adjacent to a temporary substrate, or it may be made with one or more sacrificial materials. The substrate is temporarily separated and then attached to subsequent layers until the first layer is reached. In this case, the conversion of the substrate can be completed by directly fixing the structure (such as a permanent substrate) to the final formation layer (such as the expected 15 first layer), and then, if not yet, the temporary substrate Can be removed. In some other embodiments, the multilayer structure can be manufactured from a predetermined first layer, which can be formed directly on a temporary substrate or separated from the temporary substrate by a sacrificial material, the sacrificial material The sacrificial material may be the same or different from forming a part of the layer containing the structural material. This construction process will progress from the first layer to the last layer, and if needed, one or more layers of sacrificial material can be placed on the last layer. The sacrificial material provided on the last layer may be the same as or different from the sacrificial material used to form each layer including the structural material and the sacrificial material. If necessary, a second temporary substrate can also be fixed to the last layer or the material layer on it. This first temporary substrate (ie, the original substrate) can be removed by 38 200426253. If there is material sacrifice_stored underneath the layer, they can also be removed 'and then fixed to the first layer with a permanent (or structural) substrate', the second substrate can be removed with any The removed sacrificial material is removed together. In some embodiments, the structural material may be rigid, while in other embodiments, it is mutable. In still other embodiments, the permanent substrate may be an integrated circuit or other electrical component, and the dielectric _, wire junction, reflow soldering contact, and / or other conductive or dielectric components-or more To complete the connection. 10 # #People will be able to infer many other variations after reading this article. More embodiments can also be formed by the combination of various technologies disclosed in this case. ° More more can be formed by combining the technology disclosed in this case with the content described in the patents and applications in the following table. The contents are attached for reference. • U.S. Patent Application, Proclaiming Green Sun U.S. Patent Application Publication No., Publication Date Γ \ Γ \ / Λ Α Γ \ ^ Inventor, name ~~ -------- • 09 / 493,496 2001. 01. 28 Cohen, Adam L., "Methods of Electrochemical Manufacturing"-• 10/677556 2003. 10. 01 ’Single with alignment and / or holding fixtures that can accept components • 10/8 j0262 2004. 04. 21 people, "The Way to Reduce Interlayer Discontinuities in 3D Structures Produced Electrochemically (Docket P-US099 -A-MF) 2004. 05. 07 I ^ ockaid et al ’“ Electrochemical fabrication of structures that can be partially removed by planarization using an adhesive cover, combined with a dielectric sheet and / or a seed layer ,, 10/271574 2002. 10. 15 • 20030127336A1 2003. 07. 10 ^ ien et al., "Methods and devices for making micro-electromechanical structures with high aspect ratios-10/697597 2002. 12. 20 Lockaid Temple ’fafa method and device including spray metal or powder coating process” • 10/677498 2003. 10. 01 Cohen et al., "Porous hoods and methods and devices using the hoods to create 30 structures, • 10/724513 2003. 11. 26 Cohen et al., "Non-conformal hoods and methods and devices for making 3D structures," 10/607931 2003. 06. 27 Brown et al., "Miniature Rp and microwave components and the methods used to make them ^ __ 39 200426253 • (Docket P-US093 -A-MF) 2004. 05. 07-layer 3D structure to flatten plating and / or to form multiple layers • 10/387958 2003. 03. 13 • 2003-022168-A1 2003. 12. 04 Cohen is awe-inspiring, "Tian iu system, Tie —-__ Education system and the 3D blessing of ^^ 10/434494 2003. 05. 07 • 2004-0000489-A1 2004. 01. 01 quality 3 service and loading silver cloth operation to monitor sediments • 10/434289 2003. 05. 07 • 20040065555 2004. 04. 08 Straightforward positioning of cathodic activation of cis-contact contact stupidity • 10/434294 2003. 05. 07 • 20040065550 2004. 04. 08 Uang Zhang has an enhanced electrochemical method for post-sinking, • 10/434295 2003. 05. 07 • 2004-0004001 2004. 01. 08 3D Structure Pole Integration of Fashion and Semiconductor Circuits • 10/434315 2003. 05. 07 • 2003-0234179 2003. 12. 25 A. Slim 8, using sacrificial metal patterns to shape the structure • 10/434103 2004. 05. 07 • 2004-0020782 2004. 02. 05 Manufacture of Cypress Seal Microstructures and Wire Manufacturing This Step • (Docket P-US105 -A-MF) 2004. 05. 07 Cohen et al., User side; Multi-step release method for electrochemical fabrication of structures,-• 10/434519 2003. 05. 07 • 2004-0007470 2004. 01. 15 genms R.  Smalley ’A method and device for electrochemically fabricating structures by mutual enrichment layers or selective etching and voids” #_ j ”Supplement • 60/533947 2003. 12. 31 Kumar et al., "Probe arrays and methods for labeling," _ • a • 10/724515 2003. 11. The rain of the non-parallel mating of the axe contact cover and the substrate ^ Various other embodiments of the present invention exist. Some of these embodiments are based on a combination of the techniques herein and the various techniques of the accessory. Some embodiments may not use any overlying deposition process and / or planarization process. Certain embodiments may include selective deposition of multiple different materials on one or more layers. There are 5 embodiments that may use a non-electrodeposition overlying deposition method. Some embodiments 40 200426253 use nickel as a structural material, while other embodiments may use different materials, such as gold, silver, or any other electrodepositable material, which can be separated from copper and / or some other sacrificial material . Some embodiments may use copper as a structural material with or without sacrificial material. Some embodiments remove the sacrificial material, while others do not. In some embodiments, if the deposition occurs in a manner such that the seal between the compliant portion of the CC cover and the substrate is transferred from the surface of the compliant material to its inner edge, The deposition depth can then be increased by pulling the conformable contact mask away from the substrate. After reading this article, the skilled person will easily know about many other embodiments of the present invention, design changes and usage. Therefore, the present invention is not limited to the foregoing specific embodiments, variations, and uses, but is limited only by the scope of the following patent applications. I: Brief description of drawings 2 Figures 1 (a) to 1 (c) schematically show side views of different stages 15 of a CC cover plating method; and Figures 1 (d) to 1 (g) are schematic A side view of different stages of a plating method using different types of CC covers is shown. Figures 2 (a) to 2 (f) schematically show side views of different stages of an electrochemical manufacturing method for forming a specific structure, in which a sacrificial material is selectively deposited and a structural material is covered Surface deposition. 20 Figures 3 (a) to 3 (c) are schematic side views of various sub-combination examples that can be used to manually perform the electrochemical production method shown in Figures 2 (a) to 2 (f). Figures 4 (a) to 4 (i) schematically show that the first layer of a structure is made using the adhesive cover plating method, in which the overlay deposition of a second material will cover the first material between the deposition locations The openings as well as the first material itself. 41 200426253 Figure 5 shows a flowchart of the basic operation of a preferred embodiment of the present invention. Figures 6 (a) to 6 (c) show a structure example made according to a preferred embodiment of the present invention, wherein Figures 6 (a) and 6 (b) show two different perspective views of the structure, Fig. 6 (c) shows a side view of the structure. 5 Figures 7 (a) to 7 (0) show the procedures for making the structures of Figures 6 (a) to 6 (c) from a plurality of adhesive layers according to a preferred embodiment of the present invention. Figures 8 (a) to 8 (d) show one variation of one of the last layers of the structure made in Figures 6 (a) to 6 (c), and how the permanent substrate is mated to the material layer. Figures 9 (a) to 9 (e) show the ten steps when implementing one embodiment of the present invention. Fig. 10 provides a flowchart of the basic operation of the embodiment of Figs. 9 (a) to 9 (e). Figures 11 (a) to 11 (j) illustrate various operation steps performed when implementing an embodiment of the present invention. 15 Figure 12 provides a flowchart of the basic operation of another embodiment of the present invention. Figures 13 (a) to 13 (c) schematically illustrate the process of transferring a structure 702 from a first substrate 704 to a second substrate 706. Figures 13 (d) to 13 (e) are schematic side views of a structure and a substrate having a correction structure capable of strengthening the fixing. 20 Figures 14 (a) to 14 (c) schematically show that a manufacturing method can modify one of the structures. The structure of the bonding layer includes the groove shown in Figure 13 (d). Figures 15 (a) to 15 (f) schematically show that a manufacturing method can modify the structure of a fixing layer of a structure to include a fastening groove to strengthen the structure and the substrate. 42 25 200426253 [Representative symbols for main elements of the drawing] 2 ··· First material 56 ·· Υ 台 4 ··· Second material 58,64 ... Slot 6,82 ... Substrate 62 ... Anode 8 ". CC cover 66 ... plating solution 10 ... insulator 68 ... feet 12 ... anode 72, 74 ... frame 14 ... plating solution 84 ... photoresist 16 ... electrolyte 86, 88 ... surface 18 ··· Power source 94,96 ... Metal 20 ... Support structure 98 — 3D structure 22 ·· Deposition material 102-110 ··· Operation steps of the process 26,92 ·· Opening L 122,302 ·· Structure 32 ··· Electrochemical Manufacturing System 124,200 ... Permanent Substrate 34 ... Substrate Retention System 201-210 ... · Each Layer 36 ... CC Cover Subsystem 211 ... Sacrificial Material Layer 38 ... Overlay Subsystem 212 ... Temporary Substrate 40 ... Flattening secondary systems 304, 504 ... Structural materials 42 ... Sliders 306, 506 ... Sacrificial materials 44 ... Actuators 308, 508 ... Release materials 46 ... Indicators 312 ... Substrates 48 ... Carriers 322 ... prefabricated component 52 ... polishing plate 324 ... device base 54 ... force plate 326 ... metal 43 200426253 328 ... piezoelectric material 602-614 ... each process step 330 ... adhesive 702 ... structure 334 ... member 704 ... first substrate 336 ... device 706 ... second substrate 402-416 ... each process step 712, 714 ... layer 502 ... First structure 718, 752 ... Structural material 520 ... Photoresist 720/754 ... Sacrifice material 528 ... ¾ Electrical material 722 ... Opening 532, 536 ... Dielectric material 762, 764 ... Holding structure 534 ... Metal 772/774 ... Channel 538 ... Device base 776 ... Conversion base

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Claims (1)

200426253 拾、申請專利範圍: 1. 一種由多數黏接層來製成3D結構的電化學製造方法,包 含: (A) 選擇性地沈積一料層的至少一部份於一暫時基 5 材上’該暫時基材可包括先前沈積的材料, (B) 製造多數料層而使後續層緊鄰並黏接於先前沈 積層,而該製造包含重複操作(A)多數次; (C) 在製成多數層之後,將含有一介電材料的結構 基材固接於該結構之一層的至少一部份,並由該結構除 10 去該暫時基材的至少一部份。 2. 如申請專利範圍第1項的方法,更包含: (D) 提供多數預製的罩體,該各罩體包含一圖案化 的介電材料,其含有至少一開孔,當在製造一料層的至 少一部份時可透過該等開孔來進行沈積,且該各罩體包 15 含一支撐結構會支撐該圖案化的介電材料, 其中至少有些選擇性的沈積操作包含: (1) 使該暫時基材與一所擇之預製罩體的介電材料 接觸; (2) 在有電鍍溶液存在的情況下,透過該所擇罩體中 20 之至少一開孔來將一電流導經一陽極與該暫時基材之 間,該陽極包含一所擇的沈積材料,而該暫時基材會形 如一陰極,故該所擇的沈積材料會沈積於暫時基材上來 形成一層的至少一部份;及 (3) 由該暫時基材分開該所擇的預製罩體。 45 5 3·如申明專利I巳圍第}項的方法,其中有些選擇性 * 操作包含: “貝 ⑴在該基材之—表面上提供―圖的黏接罩,該 罩含有至少一開孔; ⑺在有電麟液存麵情況下,透過_接草中之 孔來將-電流導經—陽極與該基材之間,該陽 極包含—所擇的沈積㈣,域紐會形如-陰極1 邊所擇的沈積材料會沈積於該暫時基材上來形成—居 的至少一部份,·及 曰 10 (3)由該基材除去該罩。 4·如I請專利範圍⑴項的方法,其中_接操作包 黏劑佈設在該結構基材及/或所要固接之該層的 接觸。礼上’然後使該結構基材與該層的至少-部份 15 5·==利範圍第1項的方法,其中該結構基材係為― 預衣片肢而黏接於該層的至少一部份。 6.如申請專利範圍第丨項的方 兑 ^ ,、中^亥結構基材包含一 7 接驗她㈣―料,_被固化。 20 -預聚物。 ’方法,其中该可流動材料包含 8·如申請專利範圍第7項的 成分環氧樹脂。、’方法’其中該預聚物包含-雙 9·如申料鄕圍第丨項的方法, 撓性材料。 ” 構基材包含一 46 10·如申請專利範圍第1項的方 °万去,其中該固接操作會使該 、、·。構基材至少部份地包_沈積結叙 部份。 曰 U·^請專利範圍第1項的方法,其中該多數層的製造包 括沈積至少一第二材料。 12_^專利範圍第1項的方法,其中該結構基材對該結 構的固接包括部份基材與部份結構的機械式扣接。 10 ㈣m中該所擇沈積材料或 牲材料。 -構材科,而另-者包含一犧 14.如申請專利範圍第11項的方法,其中該第二材料係為— 結構材料,而該所擇沈積材料為—犧牲材料。 15 15二:=範圍第11項的方法’其中該所擇沈積材料為 、-、。構材料,而該第二材料係為_犧牲材料。 16· = =利難第13韻方法,其中如接該結構基材 之月“亥犧牲材料的至少一部份會被除去。 i7.mr範圍第16項的方法’其#該犧牲材料會被除 或之至少―部份會被充填-介電材料。 20 芯=利卿17項的方法’其中該結構基材包含該 !9.2請專利範圍第項的方法,其中在該犧牲材料去除 月'J,§亥結構基材會被固接於該層的至少一部份。 如申凊專利範圍第】3項的方法,其令當該結構材料由該 ’材料㈣4 ,該結構材料亦會由該暫時基材釋離。 47 2I:專利 22·==利範圍第1項的方法,其中該結構基材包含-23·如申請專利範圍第〗項 或多個線結操、中_接操作包含-該結構基材的一或多"構的—或多個部份固接於 24. 如申請專利範圍第1項的方法,其中該固接摔作包人在 10 该結構的-或多個部份與該結構基材的—或多個^八 之間製成-或多個重流的焊接觸點。 ” 25. -種可由多數黏接層來製成犯結構的電化學製造裝 置,包含: 、 ⑷-裝置可選擇性沈積—料層的至少_部份於— 暫時基材上,該暫時基材可包含先前沈積材料,· 么⑻-裝置可製造多數層且使後續層緊鄰並黏接於 先岫沈積層,而該製造包含重複操作(A)多數次; (C) 一裝置可將一包含一介電材料的結構基材固接 於該結構之一層的至少一部份,並由該結構除去該暫時 基材的至少一部份;及 (D) —電腦可程式化控制接觸裝置、傳導裝置、分 離裝置、固接裝置等,而使該固接裝置在該結構之各層 形成之後來操作。 26·如申請專利範圍第25項之裝置,更包含: (D)多數的預製罩體,該各罩體包含一圖案化的介 48 200426253 電材料其含有至少一開孔,當製造一層的至少一部份 時,可穿過該等開孔來進行沈積,且各罩體包含一支撐 結構可支樓該圖案化的介電材料, 其中該選擇性沈積裝置包含: 5 (1)一裝置可使該暫時基材與一所擇預製罩體的介 電材料接觸, (2) —裝置可在有一電鑛溶液存在的情況下,透過該 所擇罩體的至少一開孔來將一電流導經一陽極與該暫 時基材之間,該陽極包含一所擇的沈積材料,且該暫時 10 基材會形如一陰極,而使該所擇沈積材料沈積於暫時基 材上來形成一層的至少一部份;及 (3) —裝置可由該暫時基材分離該所擇的預製罩體。 27. 如申請專利範圍第25項的裝置,其中該選擇性沈積裝置 包含: 15 (1)一裝置可提供一圖案化黏接罩體於該基材之一 表面上,且該罩體含有至少一開孔; (2) —裝置可在有一電鍍溶液存在的情況下,透過該 黏接罩體的至少一開孔來將一電流導經一陽極與該基 材之間,該陽極包含一所擇的沈積材料,且該基材會形 20 如一陰極,而使該所擇沈積材料沈積於該暫時基材上來 形成一層的至少一部份;及 (3) 可由該基材除去該罩體的裝置。 28. —種由多數黏接層來製成3D結構的電化學製造方法,包 含: 49 200426253 (A) 選擇性地沈積一料層的至少一部份於一第一暫 時基材上,該第一暫時基材可包括先前沈積的材料; (B) 製造多數料層而使後續層緊鄰並黏接於先前沈 積層;及 5 (C)在製成多數層之後,將一含有一介電材料的第 二暫時基材固接於該結構之一層的至少一部份,並由該 結構除去第一暫時基材的至少一部份,然後將一結構基 材固接於該結構之一層的至少一部份,其會至少部份地 重疊該第一暫時基材曾固接的位置。 10 29.如申請專利範圍第28項的方法,其中該等選擇性沈積操 作包含: (1) 提供一黏接的圖案化罩體於該基材之一表面 上,且該罩體包含至少一開孔; (2) 在有一電鍍溶液存在的情況下,透過該黏接罩體 15 的至少一開孔將一電流導經一陽極與該基材之間,該陽 極包含一所擇的沈積材料,而該基材會形如一陰極,故 該所擇沈積材料會沈積於該暫時基材上來形成一層的 至少一部份;及 (3) 由該基材除去該罩體。 20 30. —種由多數黏接層來製成3D結構的電化學製造方法,包 含: (A) 選擇性地沈積一料層的至少一部份於一第一犧 牲基材上’而該暫時基材可包括先知沈積的材料, (B) 製造多數層且使各後續層緊鄰並黏接於前一沈 50 200426253 積層;而該製造包括重複操作(A)多數次; (C)在製成多數層之後,將一含有多種材料及/或一 圖案化結構的結構之基材固接於該結構之一層的至少 一部份,並由該結構除去該暫時基材的至少一部份。 5 31.如申請專利範圍第30項之方法,更包含: (A)提供多數的預製罩體,該各罩體皆包含一圖案 化的介電材料,其含有至少一開孔,在製造一層的至少 一部份時,可穿過該等開孔來進行沈積,且各罩體包含 一支撐結構可支撐該圖案化的介電材料; 10 其中至少有些選擇性沈積操作包含: (1) 使該暫時基材與一所擇之預製罩體的介電材料 接觸; (2) 在有一電鍍溶液存在的情況下,透過該所擇罩體 的至少一開孔將一電流導經一陽極與該犧牲材料之 15 間,該陽極包含一所擇的沈積材料,而該暫時基材會形 如一陰極,故該所擇的沈積材料會沈積於該暫時基材上 來形成一層的至少一部份;及 (3) 由該犧牲材料分開該所擇的預製罩體。 32.如申請專利範圍第30項的方法,其中該等選擇性沈積操 20 作包含: (1) 提供一黏接的圖案化罩體於該基材之一表面 上,且該罩體包含至少一開孔; (2) 在有一電鍍溶液存在的情況下,透過該黏接罩體 的至少一開孔將一電流導經一陽極與該基材之間,該陽 51 200426253 極包含一所擇的沈積材料,而該基材會形如一陰極,故 該所擇沈積材料會沈積於該暫時基材上來形成一層的 至少一部份;及 (3)由該基材除去該罩體。 5 33. —種由多數黏接層來製成3D結構的電化學製造方法,包 含·· (A) 選擇性地沈積一料層的至少一部份於一第一暫 時基材上,該第一暫時基材可包括先前沈積的材料; (B) 製造多數層而使後續層緊鄰並黏接於先前沈積 10 層;及 (C) 在製成多數層之後,將一含有多數材料及/或一 圖案化結構的第二暫時基材固接於該結構之一層的至 少一部份,並由該結構除去該第一暫時基材的至少一部 份,然後將一結構基材固接於該結構之一層的至少一部 15 份,其會至少部份地重疊該第一暫時基材曾固接的位 置。 34.如申請專利範圍第33項的方法,其中該等選擇性沈積操 作包含: (1) 提供一黏接的圖案化罩體於該基材之一表面 20 上,且該罩體包含至少一開孔; (2) 在有一電鍍溶液存在的情況下,透過該黏接罩體 的至少一開孔將一電流導經一陽極與該基材之間,該陽 極包含一所擇的沈積材料,而該基材會形如一陰極,故 該所擇沈積材料會沈積於該暫時基材上來形成一層的 52 200426253 至少一部份;及 (3)由該基材除去該罩體。 35. —種製造一多部段3D結構的電化學製造方法,其中至少 有一部段係由多數黏接層所製成,該方法包含: 5 (A)製成該多部段結構的至少一部段,包括: (1) 選擇性地沈積一料層的至少一部份於一基材 上,該基材可包括先前沈積的材料; (2) 製造多數層且使後續層緊鄰並黏接於先前沈 積層,而該製造包含重複操作(1)多數次; 10 (B)提供該多部段結構的至少一添加部段; (C)將該至少一部段固接於該至少一添加部段,而 來形成該多部段結構。 36. 如申請專利範圍第35項的方法,其中該等選擇性沈積操 作包含: 15 (1)提供一黏接的圖案化罩體於該基材之一表面 上,且該罩體包含至少一開孔; (2) 在有一電鍍溶液存在的情況下,透過該黏接罩體 的至少一開孔將一電流導經一陽極與該基材之間,該陽 極包含一所擇的沈積材料,而該基材會形如一陰極,故 20 該所擇沈積材料會沈積於該暫時基材上來形成一層的 至少一部份;及 (3) 由該基材除去該罩體。 37. 如申請專利範圍第35項的方法,更包含由該基材分開該 多部段結構的至少一部段。 53200426253 Scope of patent application: 1. An electrochemical manufacturing method for making a 3D structure from a plurality of adhesive layers, comprising: (A) selectively depositing at least a part of a material layer on a temporary base material 'The temporary substrate may include previously deposited material, (B) manufacturing a plurality of layers such that subsequent layers are immediately adjacent and adhered to the previously deposited layer, and the manufacturing includes repeating operations (A) a plurality of times; (C) After a plurality of layers, a structural substrate containing a dielectric material is fixed to at least a portion of a layer of the structure, and at least a portion of the temporary substrate is removed from the structure. 2. The method of claim 1 in the patent application scope further includes: (D) providing a plurality of prefabricated shells, each of which contains a patterned dielectric material containing at least one opening, and when manufacturing a material At least a portion of the layer can be deposited through the openings, and each cover package 15 contains a support structure that supports the patterned dielectric material. At least some selective deposition operations include: (1 ) Contacting the temporary substrate with the dielectric material of a selected pre-made cover; (2) conducting a current through at least one opening in 20 of the selected cover in the presence of a plating solution; Between an anode and the temporary substrate, the anode contains a selected deposition material, and the temporary substrate will be shaped as a cathode, so the selected deposition material will be deposited on the temporary substrate to form at least one layer. Part; and (3) the selected prefabricated shell is separated by the temporary substrate. 45 5 3. As stated in the method of item I} of the patent, some of the optional * operations include: "Bei provides an adhesive cover on the surface of the substrate-the figure, the cover contains at least one opening ⑺ In the case of the existence of the electric liquid surface, the current is passed through the holes in the _ grass to the anode between the anode and the substrate, the anode contains-the selected deposit, the domain button will be shaped as- The selected deposition material on the side of the cathode 1 will be deposited on the temporary substrate to form-at least a part of the residence, and 10 (3) the cover is removed by the substrate. 4. If I Method, wherein the bonding operation is arranged on the structural substrate and / or the layer to be fixed in contact. Courtesy 'then make the structural substrate and at least-part of the layer 15 5 · == 利The method of the first item, wherein the structural base material is ― pre-coating limbs and is adhered to at least a part of the layer. The substrate contains a 7-response material, which is cured. 20-prepolymer. The method, wherein the flowable material contains 8 · The component epoxy resin as claimed in item 7 of the scope of patent application. "Method" wherein the prepolymer contains-double 9 · The method as claimed in item 鄕, flexible material. "The structural substrate contains a 46 10. If the application of the first item of the patent scope, the fixed connection operation will make the ,, ... The substrate is at least partially covered by the deposition substrate. The method of item 1 of the patent application, wherein the manufacturing of the plurality of layers includes depositing at least a second material. The method of item 12 in the patent scope, wherein the fastening of the structural substrate to the structure includes mechanical fastening of a portion of the substrate and a portion of the structure. The selected deposition material or animal material in 10 ㈣m. -Structural Materials Section, and the other-includes a sacrifice 14. The method according to item 11 of the scope of patent application, wherein the second material is-a structural material and the selected deposition material is-a sacrificial material. 15 15 二: = Method 11 of the range item ′, wherein the selected deposition material is,-,. The second material is a sacrificial material. 16 · = = Reliance method of the 13th rhyme, in which at least a part of the sacrificial material will be removed, such as the month of the structural substrate. The method of item 16 of the i7.mr range 'its #The sacrificial material will be Divide or at least-part of it will be filled-dielectric material. 20 core = Li Qing method of item 17 'where the structural substrate contains this! 9.2 method of patent scope item, where the sacrificial material is removed' J, § The structural base material will be fixed to at least a part of the layer. For example, the method of item 3 in the scope of the patent application, when the structural material is made of the material '4, the structural material will also be made of The temporary substrate is released. 47 2I: The method of the patent 22 · == profit range item 1, wherein the structural base material contains -23 · If the patent application range item or more than one line knot operation, intermediate connection operation Contains-one or more " structural- or multiple-parts of the structural substrate are fixedly attached to 24. The method of item 1 of the patent application scope, wherein the fixed-tipped package is at 10 the structural-or- -Or multiple heavy-flow soldering contacts made between multiple parts of the structural substrate-or more. "25.-种 可An electrochemical manufacturing device made of a plurality of adhesive layers, including:, 装置-the device can be selectively deposited-at least _ part of the material layer-on a temporary substrate, the temporary substrate may include previously deposited materials ⑻-The device can manufacture most layers and make subsequent layers immediately adjacent and adhere to the first deposited layer, and the manufacturing involves repeating operations (A) multiple times; (C) A device can incorporate a dielectric material The structural substrate is fixed to at least a portion of a layer of the structure, and at least a portion of the temporary substrate is removed from the structure; and (D) — a computer-programmable control of contact devices, conductive devices, separation devices, A fixing device or the like is operated after the layers of the structure are formed. 26. If the device in the scope of application for patent No. 25, further includes: (D) most of the prefabricated shells, each of which contains a patterned dielectric 48 200426253 electrical material containing at least one opening, when manufacturing at least one layer of at least In some cases, deposition can be performed through the openings, and each cover body includes a supporting structure that can support the patterned dielectric material. The selective deposition device includes: 5 (1) a device can The temporary substrate is brought into contact with the dielectric material of a selected pre-made cover. (2) The device can conduct a current through at least one opening of the selected cover in the presence of a power mineral solution. Between an anode and the temporary substrate, the anode includes a selected deposition material, and the temporary 10 substrate will be shaped as a cathode, and the selected deposition material is deposited on the temporary substrate to form at least one layer. Parts; and (3)-the device can separate the selected prefabricated enclosure from the temporary substrate. 27. The device of claim 25, wherein the selective deposition device comprises: 15 (1) A device can provide a patterned adhesive cover on a surface of the substrate, and the cover contains at least An opening; (2) the device can conduct a current between an anode and the substrate through at least one opening of the bonding cover in the presence of a plating solution, the anode including an A selected deposition material, and the substrate is shaped like a cathode, so that the selected deposition material is deposited on the temporary substrate to form at least a portion of a layer; and (3) the cover can be removed by the substrate Device. 28. An electrochemical manufacturing method for making a 3D structure from a plurality of adhesive layers, comprising: 49 200426253 (A) selectively depositing at least a portion of a layer on a first temporary substrate, the first A temporary substrate may include previously deposited materials; (B) manufacture a plurality of layers so that subsequent layers are immediately adjacent and adhered to the previously deposited layers; and 5 (C) after forming a plurality of layers, a A second temporary substrate is fixed to at least a part of a layer of the structure, at least a part of the first temporary substrate is removed from the structure, and then a structural substrate is fixed to at least a layer of the structure In part, it will at least partially overlap the position where the first temporary substrate was fixed. 10 29. The method of claim 28, wherein the selective deposition operations include: (1) providing an adhered patterned cover on a surface of the substrate, and the cover includes at least one Openings; (2) in the presence of an electroplating solution, a current is conducted between an anode and the substrate through at least one opening of the bonding cover 15, the anode comprising a selected deposition material And the substrate is shaped like a cathode, the selected deposition material is deposited on the temporary substrate to form at least a portion of a layer; and (3) the cover is removed from the substrate. 20 30. An electrochemical manufacturing method for manufacturing a 3D structure from a plurality of adhesive layers, comprising: (A) selectively depositing at least a portion of a material layer on a first sacrificial substrate; and the temporary The substrate may include material deposited by the Prophet, (B) making a plurality of layers with each subsequent layer in close proximity and adhering to the previous Shen 50 200426253 layer; and the manufacturing includes repeating operations (A) a majority of times; (C) in the production After the plurality of layers, a substrate containing a structure containing a plurality of materials and / or a patterned structure is fixed to at least a portion of a layer of the structure, and at least a portion of the temporary substrate is removed from the structure. 5 31. The method according to item 30 of the scope of patent application, further comprising: (A) providing a plurality of prefabricated shells, each of which includes a patterned dielectric material containing at least one opening, and is manufacturing a layer At least a portion of the dielectric layer can be deposited through the openings, and each cover includes a supporting structure that can support the patterned dielectric material. 10 At least some of the selective deposition operations include: (1) using The temporary substrate is in contact with a dielectric material of a selected pre-made cover; (2) in the presence of a plating solution, a current is conducted through an anode and the at least one opening of the selected cover; Among the 15 sacrificial materials, the anode contains a selected deposition material, and the temporary substrate is shaped like a cathode, so the selected deposition material is deposited on the temporary substrate to form at least a portion of a layer; and (3) The selected prefabricated shell is separated by the sacrificial material. 32. The method of claim 30, wherein the selective deposition operations 20 include: (1) providing an adhered patterned cover on a surface of the substrate, and the cover includes at least An opening; (2) in the presence of a plating solution, a current is conducted between an anode and the substrate through at least one opening of the bonding cover, the anode 51 200426253 includes a choice And the substrate is shaped like a cathode, the selected deposition material is deposited on the temporary substrate to form at least a portion of a layer; and (3) the cover is removed from the substrate. 5 33. An electrochemical manufacturing method for making a 3D structure from a plurality of adhesive layers, comprising: (A) selectively depositing at least a portion of a layer on a first temporary substrate, the first A temporary substrate may include previously deposited materials; (B) manufacture a plurality of layers such that subsequent layers are immediately adjacent and adhered to the previously deposited 10 layers; and (C) after forming a plurality of layers, a material containing a majority of the material and / or A second temporary substrate of a patterned structure is fixed to at least a portion of a layer of the structure, and at least a portion of the first temporary substrate is removed from the structure, and then a structural substrate is fixed to the structure. At least 15 parts of one layer of the structure will at least partially overlap the position where the first temporary substrate was fixed. 34. The method of claim 33, wherein the selective deposition operations include: (1) providing an adhered patterned cover on a surface 20 of the substrate, and the cover includes at least one Openings; (2) in the presence of a plating solution, conducting an electric current between an anode and the substrate through at least one opening of the bonding cover, the anode comprising a selected deposition material, The substrate will be shaped like a cathode, so the selected deposition material will be deposited on the temporary substrate to form at least a portion of 52 200426253; and (3) the cover is removed from the substrate. 35. An electrochemical manufacturing method for manufacturing a multi-segment 3D structure, at least one of which is made of a plurality of adhesive layers, the method includes: 5 (A) manufacturing at least one of the multi-segment structure Sections, including: (1) selectively depositing at least a portion of a layer on a substrate, the substrate may include previously deposited materials; (2) fabricating a plurality of layers with subsequent layers in close proximity and bonding The layer is deposited before, and the manufacturing includes repeated operations (1) multiple times; 10 (B) providing at least one additional section of the multi-segment structure; (C) fixing the at least one section to the at least one additional section Sections to form the multi-segment structure. 36. The method of claim 35, wherein the selective deposition operations include: 15 (1) providing an adhered patterned cover on a surface of the substrate, and the cover includes at least one Openings; (2) in the presence of a plating solution, conducting an electric current between an anode and the substrate through at least one opening of the bonding cover, the anode comprising a selected deposition material, The substrate will be shaped like a cathode, so the selected deposition material will be deposited on the temporary substrate to form at least a portion of a layer; and (3) the cover is removed from the substrate. 37. The method of claim 35, further comprising separating at least one segment of the multi-segment structure by the substrate. 53
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115863183A (en) * 2023-02-03 2023-03-28 之江实验室 Method for manufacturing flow-measurable micro-channel for heat dissipation of three-dimensional integrated wafer system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115863183A (en) * 2023-02-03 2023-03-28 之江实验室 Method for manufacturing flow-measurable micro-channel for heat dissipation of three-dimensional integrated wafer system

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