TW200533926A - Microprobe tips and methods for making - Google Patents

Abstract

Embodiments of the present invention are directed to the formation of microprobe tips elements having a variety of configurations. In some embodiments tips are formed from the same building material as the probes themselves, while in other embodiments the tips may be formed from a different material and/or may include a coating material. In some embodiments, the tips are formed before the main portions of the probes and the tips are formed in proximity to or in contact with a temporary substrate. Probe tip patterning may occur in a variety of different ways, including, for example, via molding in patterned holes that have been isotropically or anisotropically etched silicon, via molding in voids formed in over exposed photoresist, via molding in voids in a sacrificial material that have formed as a result of the sacrificial material mushrooming over carefully sized and located regions of dielectric material, via isotropic etching of a the tip material around carefully sized placed etching shields, via hot pressing, and the like.

Description

200533926 IX. Description of the invention: [Examination of the household members of the family ^ _ 才 支 冬 好 々 员] Related applications This application was requested on December 31, 2003, January 29, 2004, and December 12, 2003. US Provisional Patent Application Nos. 60 / 533,975, 60 / 540,510, 60 / 533,933, 60 / 536,865, and 60 / 540,511 filed on January 31, January 15, 2004, and January 29, 2004. This application is a partial 10-point continuation application filed with U.S. Formal Application Nos. 10 / 772,943 and 10 / 949,738, filed on February 4, 2004 and September 24, 2004, respectively. All the above applications are hereby incorporated into this case for reference. FIELD OF THE INVENTION The present invention relates generally to microprobes and their EFABTMS-type electrochemical processes, and more specifically, to the design of microprobe contacts and their manufacturing processes.

L Zhidonghao U Background of the Invention A technology invented by Adam L. Cohen to construct three-dimensional structures (eg, parts, components, devices, and the like) from a plurality of adhesive layers, and is a well-known electrochemical manufacturing method. Commercially promoted by Microfabrica Inc. (named formerly MEMGen®) of Burbank, California and Burbank in the name of EFABTM. This technology is described in US Patent No. 6,027,630 issued on February 22, 2000. This electrochemical deposition technique allows for the selective deposition of materials ' using a unique light-shielding technique including the use of a photomask, including patterned blending materials on an auxiliary structure that is independent of substrates plated in 200533926. When it is necessary to perform photo-deposition using a photomask, the harmonized part of the photomask is in contact with a substrate 'while the presence of a plating solution causes the photomask's harmonized part to contact the substrate' to suppress deposition at a selected position. For convenience, these photomasks are generally referred to as conformable contact masks; this shading technique is generally referred to as the conformal contact mask plating process. More specifically, in terms of Microfabrica Inc. (formerly MEMGen®) of Burbank, California, these masks are the well-known mSTANT MASK ™ and the well-known process INSTANT MASKINGTM or INSTANT 10 MASKTM plating. The selective deposition using the harmonic contact mask plating can be used to form a single material layer, or can be used to form a multilayer structure. The technology of 630 patents is hereby incorporated by reference in its entirety as reference material. Since the patent application for the above-mentioned famous patent was filed, different documents related to the harmonized contact mask electroplating (that is, INSTANT MASKING) and electrochemical manufacturing have been published: (l.) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will, "EFAB: Batch Production of Functional, Full-Dense Metal Parts with Microscale Features (EFAB: Batch Production of Functional, Full-Dense Metal Parts with micro-scale 20 features) ", Proc. 9th Solid Freeform Fabrication, The University of Texas at Austin, pl61, August 1998. (2.) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis, and P. Will, "EFAB: Fast, Low-cost Desktop Micromachining with Real 3D MEMS with High Aspect Ratio (EFAB: Rapid, Low-Cost Desktop 200533926

Micromachining of High Aspect Ratio True 3-D MEMS) ", Proc. 12th IEEE Micro Electro Mechanical Systems Workshop, IEEE, p244, January 1999. (3 ·) Α · Cohen," Three-dimensional micromanufacturing by electrochemical Processing operations (3-D 5 Micromachining by Electrochemical Fabrication),

Micromachine Devices, March 1999. (4.) G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld and P. Will, "EFAB: Rapid Desktop Manufacturing of True 3D Microstructure (EFAB: Rapid Desktop Manufacturing of True 3 -D 10 Microstructures) ", Proc · 2nd International Conference on

Integrated MicroNanotechnology for Space Applications, The Aerospace Co., April 1999.

(5.) F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld, and P. Will, "EFAB: High aspect ratio using a low-cost automated batch process, 15 arbitrary 3-dimensional metal microstructures ( EFAB: High Aspect Ratio, Arbitrary 3-D

Metal Microstructures using a Low-Cost Automated Batch Process), 5,3rd International Workshop on High Aspect Ratio Microstructure Technology (HARMST'99), June 1999 0 (6 ·) Α · Cohen, U. Frodis, F. Tseng, G. Zhang, F. 20 Mansfeld, and P. Will, "EFAB: Low-Cost, Automated Electrochemical Batch Fabrication of Arbitrary 3-D Microstructures' ', Micromachining and Microfabrication Process Technology, SPIE 1999 Symposium on 200533926

Micromachining and Microfabrication, September 1999. (7.) F. Tseng, G. Zhang, U. Frodis, A. Cohen, F. Mansfeld, and P. Will, "EFAB: High-aspect-ratio ratio of arbitrary low-dimensional automated batch processes, arbitrary 3-dimensional metal microstructures ( EFAB ·· High Aspect Ratio, Arbitrary 3-D 5 Metal Microstructures using a Low-Cost Automated Batch Process) ", MEMS Symposium, ASME 1999 International Mechanical Engineering Congress and Exposition, November 1999. (8 ·) Α · Cohen, "Electrochemical Manufacturing (EFABTM) (electrochemical 10 Fabrication (EFABTM))," Chapter 19 of The MEMS Handbook, edited by Mohamed Gad-El-Hak, CRC Press, 2002 0 (9 ·) "Microfabncation-Rapid Prototyping, Killer Application,", 15 pages 1-5 of the Rapid Prototyping Report, CAD / CAM Publishing, Inc., June 1999. The disclosures of the nine publications are incorporated herein by reference in their entirety for reference. The electrochemical deposition process can be performed in a number of different ways 20 as proposed in the aforementioned patents and publications. In one form, this process includes performing three individual actions during the formation of each structural layer, which is structured as follows: 1. Selectively by accumulating on the substrate-or more required areas-the substrate At least one material is deposited. 2. Next, at least one additional material is deposited and deposited by electrodeposition, because 200533926 Λ, force 'children's product covers the two regions that were selectively deposited on it in advance-= and did not accept the choice previously given by Zuo He The areas of the substrates that are deposited. …, 3. · Finally, the plane of the material to be deposited during the first and second operations creates a required thickness of at least a region containing at least -material and at least, a region of additional material- The smooth surface of the first layer. After the 4th layer is formed, the front layer is immediately adjacent to a one or 10 layer, and is bonded to the smooth surface of the front layer. The additional layers are composed of repeating the first to third operations or more, wherein each of the succeeding layers will form the previously formed layers and make the substrate processing new and Thickened substrate. Primary 1: Complete the formation of all the layers, and at least one of the deposited materials is generally removed by a surname engraving process to expose or demould the three-dimensional structure formed by the desire. ~ A better method of performing selective electrodeposition, including in the first operation,: ,,, and a photomask electrosupplier by Qiaohe type. In this type of electric mineral towel, one or more harmonic contact (cc) photomasks are first formed. The harmonic contact (cc) light 20 f includes a patterned harmonic dielectric material that is bonded or formed on it. The blending material used in each mask is made according to one of the four materials with a special cross section. At least one harmonic contact (cc) mask is required for the unique cross-sectional pattern of each battery. Auxiliary structures used in harmonized contact (CC) masks are typically one of metal plates that are selectively plated and the plating material will dissolve from them. 200533926 Flat plate structure. In this typical method, the auxiliary structure is used as an anode in a plating process. In an optional method, the auxiliary structure may alternatively be a porous or other perforated material, and the deposition material passes through the porous or other perforated material from an end anode to the deposition surface during the electric mining operation. In any method, the harmonic contact (cc) mask can share a common auxiliary structure, that is, the pattern of the harmonic dielectric material for recording multiple material layers can be located in different regions of a single auxiliary structure in. When the -single-auxiliary structure contains multiple plating patterns, the overall structure is considered as a harmonized contact (CC) mask. At the same time, the individual electric money masks can be regarded as "sub-10 masks." In this application The difference is only relevant in relation to a completed specific position. For the preparation of the selective deposition performed in the first operation, the harmonic portion of the harmonic contact (CC) mask is configured to align and Press on a selected portion of the substrate against which it is being deposited (or on a previously deposited portion of a previously formed layer or a 15 layer layer). Include all openings in the harmonic portion of the Harmonic Contact (CC) mask An electric money solution is used to press the harmonized contact (CC) mask and the substrate together in this way. The harmonious contact (CC) mask material that is in contact with the substrate is used as a resistance to electrodeposition. Obstacles, the openings in the Harmonic Contact (cc) reticle that are filled with a plating solution on the same day, 20 are used to supply material from an anode (for example, Harmonic Contact) when an appropriate potential and / or current is supplied. (CC) Mask auxiliary structure) The non-contact portion of the plate (which is used as the cathode during the plating operation). Figures 1A-1C show an example of a harmonic contact (cc) mask and a harmonic contact (CC) mask plating. Figure 1A is a side view of a harmonic contact (CC) reticle 8 composed of a harmonic or deformable (eg, elastomeric) insulator 10 patterned on _anode 200533926 12. The anode has a " " " " work%. The 1A drawing also shows a substrate 6 that is not separated from the photomask 8. Because the pattern is complex on the surface structure (top-levelly complex) (For example, an isolation "island containing 5 insulator materials," so one of the functions is to serve as an auxiliary material for the patterned insulator 10 to maintain its integrity and alignment. The other function is to serve as an anode for electroplating operations. As shown in Figure 1] 3, the harmonized contact (CC) mask electroplating simply selects 10 by pressing the insulator against the substrate and then electrodepositing the material through the apertures 26a & 26b in the insulator. The material 22 is deposited on a substrate 6. After deposition, as shown in FIG. 1C, the harmonized contact (CC) mask is preferably non-destructively separated from the substrate 6. The difference between the harmonized contact (CC) mask key manufacturing process and the "through-mask" plating process is that the separation of the light-shielding material from the substrate in the through-mask plating process is destructive. In the case of through-the-plate plating, 15-5 week Japanese-style contact (cc) mask plating selectively and simultaneously deposits a material to cover the entire layer. The plating area may consist of one or more isolated plating areas, where The isolation key areas may be a single structure or multiple structures formed at the same time. In the case of harmonic contact (cc) mask plating, the individual masks are not intentionally damaged during the removal process, so It is still available in multiple electroplating operations. Figures 1D-1F show another example of a Harmonic Contact (CC) mask and Harmonic Contact (CC) mask plating. Section 1〇 The figure shows a photomask 8 separated from the photomask 8 including a patterned blending material 10, and an auxiliary structure 20. Figure 1D also illustrates the substrate 6 separated from the photomask 8. 1E Figure 200533926 illustrates the photomask 8 'in contact with the substrate 6. Figure 1F The figure shows the deposit 22 'caused by conducting current from the anode 12 to the substrate 6. The figure ig shows the deposit 22' on the substrate 6 after being separated from the photomask 8. In this example, An appropriate electrolyte is arranged between the substrate 6 and the anode 12, and the ionic current from one or both of the solution 5 and the anode is conducted to the substrate of the deposition material through the opening in the mask. This type The mask can be regarded as an insulated INSTANT MASK ™ (AIM) or regarded as an insulated (anodeless) harmonic contact (ACC) mask. Unlike the through-hole plating, the harmonic contact (cc) light The harmonized contact (CC) mask formed by the mask plating capacity is completely separated from the manufacturing of the plated substrate (for example, it is separated from a three-dimensional (31 :) structure) and can be constructed in multiple ways. The harmonious contact mask, for example, can use a photolithographic etching process. All the masks can be formed simultaneously before the structure is manufactured, rather than during the manufacturing process. This separation can be a simple, low cost, and automated process. , Self-contained, and almost clean Both can be mounted anywhere "table ,, factory for the manufacture of 3-dimensional structures, by the maintenance organization or the like is performed in units leave any desired process, such as a cleanroom photolithographic money engraved surgery. Figures 2A-2F show 20 examples of the electrochemical process described above. The figures show that the process includes depositing a first material 2 which is a sacrificial material, and a fourth material 4 which is a structural material. In this example, the Harmonic Contact (CC) mask 8 includes a patterned Harmonic material (eg, an elastomeric dielectric material) 10 and an auxiliary structure 12 made of a deposition material 2. The reconciling part of the photomask is pressed against the base plate 6 with the power mineral solution 14 disposed in the opening 16 of the reconciling material 200533926 material 10. Then, the substrates 6 from the electrodes I,, and I pass through the electrolyte solution 14 through the auxiliary structures I2 and (b) serving as anodes at the same time. Figure 2A illustrates the passage of current causing material 2 and material 2 in the battery solution to be selectively transferred from the anode 12 and plated on the cathode 6. After the first / child product 2 is charged on the substrate 6 using the harmonized contact (cc) mask 8, the harmonized contact (CC) mask 8 is removed as shown in the figure. Figure% illustrates that the second deposition material 4 has been covered (i.e., not remotely deposited) covering the previously deposited first deposition material 2, and other parts of the overlying substrate 6. Overlay deposition is performed by forming an anode (not shown) formed from a second material through a suitable plating solution and electroplating to the cathode / substrate 6. As shown in Figure 2D, the entire two material layers are then planarized to achieve precise thickness and flatness. As shown in FIG. 2E, after repeating this process for all layers, the multilayer structure 20 composed of the second material 4 (ie, the structural material) is embedded in the first material 2 (ie, the sacrificial 15 material). As shown in Figure 2F, the embedded structure is etched to produce the desired component, i.e., the structure 20. As shown in Figures 3A-3C, these are the different components of an exemplary manual electrochemical manufacturing system ® 32. The system 32 is composed of several subsystems 34, 36, 38, and 40. Shown in each upper part of Figures 3A to 3C is a substrate holding 20 subsystem 34 and includes a plurality of components: (1) a bracket 48 (2) a metal substrate on which the layers are deposited 6. and (3) —The linear slide 42 can move the substrate 6 up and down relative to the bracket 48 in response to the driving force obtained from the actuator 44. The subsystem 34 also includes an indicator 46 for measuring the difference in the vertical position of the substrate, which can be used to set or determine the thickness of the layer and / or the thickness of the deposit 13 200533926 which can be accurate. The subsystem 34 further includes feet 68 for brackets 48 and is mounted on the subsystem 36. Harmonic contact (cc) mask 36 ′ shown in the lower part of FIG. 3A, including a plurality of elements: ⑴—harmonic contact (cc) mask is actually a common auxiliary structure / Anode Η Harmonic ㈣ reticle (ie, 'sub reticle'), (2) accuracy χ platform μ, ⑶ accuracy Υ platform 56, the frame π on which the feet 68 of the subsystem 34 are mounted, and (3) It is used for a slot containing the electrolyte 16. Subsystems 34 and 36 also include appropriate electrical connections (not shown) for connection to an appropriate power source and 10 to drive the harmonized contact (CC) shading process. Below Figure 3B. [The points shown in 1 point are the coverage type of the deposition subsystem, and include a plurality of elements ... an anode 62, (2) an electrolyte tank holding the plating solution 66, and (3) the subsystem 34 The frame 74 rests on the feet 68. Subsystem 38 also includes appropriate electrical connections (not shown) for connecting 15 & poles to a suitable power source to drive the overlay deposition process. Shown in the lower part of Figure 3C is a planarization subsystem 40 and includes an overlay plate 52 and a combined movement and control system (not shown) for planarizing the sediment. Another method of forming microstructures from electromoney metals (that is, using electrochemical 20 manufacturing technology) is based on U.S. Patent No. 5,190,637 issued to Henry Guckel, entitled "By Utilizing Multi-Level Deep Sections of Sacrificial Metal "Formation of Microstructures by Multiple Level Deep X-ray Lithography with Sacrificial Metal layers." This patent teaches using a photomask to construct a metal 200533926 structure. The first layer of the main metal is electroplated on an exposed electric ore substrate to fill the gaps in the photoresist, and then the photoresist is removed and the -assisted metal is covered with the hafnium layer and the cover. The f job. Then, the exposed surface of the auxiliary metal is processed down to a height where the first metal is exposed, 5 for generating a flat and uniform surface extending to cover the two main and auxiliary metals. Then, a first layer is formed by covering the first layer with a photoresist layer, and then the process for generating the first layer is repeated. The process is then repeated until the entire structure is formed, and the auxiliary metal is removed by the last name engraving. The photoresist composition is formed to cover the electroplated substrate or the previous 10 layers by casting, and the photoresist is exposed through a patterned mask through X-ray or ultraviolet radiation to form a void in the photoresist. Electrochemical manufacturing provides the ability to construct prototypes and commercial mass production of micro-objects, components, structures, components, and the like at a reasonable cost and time. In principle, the electrochemical manufacturing system is an enabler for forming most structures that have not been produced so far. Electrochemical manufacturing opens the door to new designs and products in most industrial sectors. Even if electrochemical manufacturing provides this novel capability, it should be understood that electrochemical manufacturing technology can be combined with designs and structures that are well known in different fields to generate new structures, providing design in terms of the current level of progress in developing technology. The specific uses of electrochemical fabrication, structures, capabilities, and / or characteristics are not widely known or significant. In the plural field, there is a need for micro-components with improved characteristics, reduced manufacturing time, reduced manufacturing costs, simplified manufacturing processes, and / or more independence between geometric configuration and customized processes. There is also a need for improved manufacturing methods and devices in the field of micro (i.e., medium and micro scale) component manufacturing. In the field of electrochemical manufacturing, there are also enhancements to complement this already well-known in the field to allow for more uses in component design, improved material selection, improved material characteristics, more cost-effective, and 5 Small technology needs to manufacture these components with similar risks and risks. SUMMARY OF THE INVENTION An object of some aspects of the present invention is to provide an electrochemical manufacturing technology capable of manufacturing an improved microprobe contact. 10 An object of some aspects of the present invention is to provide an electrochemical manufacturing technique capable of manufacturing improved microprobes and microprobe contacts. It is an object of some aspects of the present invention to provide an improved electrochemical manufacturing technique capable of manufacturing microprobe contacts. An object of some aspects of the present invention is to provide an improved electrochemical manufacturing technology capable of manufacturing microprobe 15-pin and microprobe contacts. Once those skilled in the art have reviewed the teachings here, other objects and advantages of the plural viewpoint of the present invention will be obvious. The plural viewpoints of the present invention are hereby explicitly proposed or ascertained by the teaching content in other ways, and one or more of the above-mentioned headings 20 may be proposed alone or in combination, or alternatively Other objects of the invention identified by its teachings. Even if it is the case with some viewpoints, it is not necessarily intended that all purposes are presented by any single viewpoint of the present invention. In a first aspect of the present invention, a method for producing a contact structure includes: forming a contact contact having a desired form; constituting an compliant photo by an electrochemical method 16 200533926 * for forming-contacting " And the method of adhering contact contacts to the probe structure in the M-method of the present invention includes: constructing a method for generating a contact structure 5 10 15 20 an adhesive layer of a deposited material ===== contacts; Electro-adhesion to the probe structure for 1 =: structuring; and for the contact contacts *: hair dr, a formula for generating contact structures is composed of == ::: shape ::: contact contacts; A compliant probe structure in which a method is formed on the contact point: hair: = In the fourth aspect, a square electrodeposited material for generating a contact structure has a contact form of a desired form; and On the contact ^ === ugly_, where in the connection method, === '::, in the side that produces the contact structure-having the required form = 成: = _ 结构, and constitutional composition-contact contact Contact points, where on the compliant probe structure: = 建 其-: 可 了 == 死士: Once reviewing the teaching content presented here, should Step viewpoint. Other viewpoints of the present invention may include the above-mentioned viewpoints of 200533926. Other viewpoints of the present invention include a device capable of performing one or more method viewpoints of the above-mentioned invention. These other viewpoints of the present invention Can provide different combinations of the above points and provide other configurations, structures, functional relationships, and processes not specifically mentioned above. 5 Schematic illustrations 1A-1C are a harmonic contact mask electroplating process in different 1D-1G is a schematic side view of the different stages of a harmonic contact mask plating process using a different type of harmonic contact mask. Figures 2A-2F are for use. In order to form a schematic side view of the electrochemical process of a specific structure at different stages, a sacrificial material is selectively deposited at the same time while a structural material is deposited overlying. Figures 3 A-3 C are different exemplary sub-assemblies. A schematic side view of FIG. 2A can be used to manually perform the electrochemical manufacturing method shown in FIGS. 2A-2F. 15 FIGS. 4A-4I are schematic illustrations of the use of an adhesive mask The first layer of a structure formed by plating, in which the overlay deposition of a second material covers the opening between the deposition location of the first material and the first material itself. Figures 5 A-5 J are based on The first specific embodiment of the present invention is used to form a schematic side view of a probe element array manufacturing process at different stages, in which 20 probe element contacts are formed by plating on a seed layer coated with an epoxy template. The epoxy template is molded from a silicon wafer subjected to patterned anisotropic etching. Figures 6A-6E are used to form a probe element according to a second embodiment of the present invention. Array manufacturing process is a schematic side view of different stages. It is similar to the first embodiment of the present invention, except that the constituent materials of the probe element contacts are different from the rest of the probe element. Figures 7A-7F are schematic side views of different stages of the process for forming a pin component according to a third embodiment of the present invention, wherein the contact of the probe element is made using an undercut Consisting of a patterned photoresist. 10 15 20 Figures 8A-8F are schematic side views of the manufacturing process of a needle element according to a fourth embodiment of the present invention at different stages. The probe element contacts are made with outward pushing The drawn sidewall is formed by a constricted portion in a patterned photoresist. Figures 9A-9G are schematic side views of the manufacturing process for forming an array of bismuth needle elements at different stages according to the fifth embodiment of the present invention. For example, the contact of the needle elements uses a patterned light. The patterned photoresist material is covered by a plating material made of a protruding portion of the resist material and made of a mushroom shape and an opening etched through. The ^ A-IOC diagram is a schematic side view of a process for forming a k-pin element array at different stages according to a sixth embodiment of the present invention, in which the contact points of the TL pin are used-patterned photoresist The protruding portion is made of a mushroom-shaped material—the plating material covers the patterned photoresist material. The UAdlFij is a rough part of the process for forming the probe connection process at different stages according to the seventh specific embodiment of the present invention. A perspective view, a side view along a central cutting plane, Using a mold composed of a patterned deposition, the other two: I. forming a plurality of voids covered by overlay deposition (each contact is 19 200533926 voids) 'its first narrowing is narrowed and has- Desired shape. 12A-12E are schematic partial penetration and perspective views of a process for forming a probe contact array at different stages according to an eighth embodiment of the present invention, in which the probe contact is made of a sacrificial material The surrounding knot 5 material or a part of the light-shielding area of the contact material is formed, and then the structure or the contact material is etched relative to the sacrificial material to achieve the required contact step. ^ Figures 13A-13C are schematic side views of the manufacturing process of the array of needles and elements in different stages according to the ninth embodiment of the present invention, which are located far below the previous components of the component. In the exposed area of the contact element, the patterned light-shielding material is configured to cover the contact material, and the contact material is removed to form the probe contacts of other parts of the element. Figures 14A-14D are schematic side views of a process used to form an embossing tool at different stages. The tool is used to form a probe with all existing array elements and a -first-contact form. contact. Figures 15A and 15D are schematic side views of a process for forming an embossing tool at different stages. The tool is used to form a probe connector having only a part of an array element existing and having a second contact form. point. 20 Figures 16A-16M are schematic side views of a process for forming a probe element array at different stages according to a tenth embodiment of the present invention, in which an embossing tool produced according to Figures 14A-14D is used Make the probe element contacts. Figures 17A-17L are for the eleventh specific implementation of the invention according to the present invention. 20 200533926 Probe element array-a schematic side view of the process at different stages: in the connection, the contact according to the 14A element is used. Fastening probe element. j is not constituted and selected 5 10 15 20 The age chart is an f ^ drawing for constructing a probe element array according to the twelfth example of the present invention, and a straight side view of a schematic 14D drawing of a component contact The embossed guard constitutes a probe, and the selected probe element and probe contact are not formed therein. ㈣η · 19N is a schematic side view of a process for forming a probe element array in accordance with the thirteenth embodiment of the present invention at different stages, one of which is obliquely viewed at the same height and Different contact shapes j, and the probe contact elements are constructed using the tool produced according to the 14A and 15A15D drawings. Figures 20A-20E are schematic side views for the tenth _ forming a probe element according to the present invention-the manufacturing process is at different stages, in which the pin is connected to U Need to contact material coating. The sacrifice Γ-T1F diagram is a schematic side view of a process for forming a plate pin element at different stages according to the fifteenth embodiment of the present invention. The middle gripper-pushing form and a forming probe Drowning of the required contact material in the component to protect it from the sacrificial material used. The figure is a schematic partial penetrating and perspective view of a structure of the array of elements used in the sixteenth specific implementation of the :::: element at different stages. The probe contacts are used. 21 200533926-Shi Xi mold, and before removing the sacrificial material between the 1 dose of shadow material and the point is protected from sacrifice ^ 刻 响 0 5 10 Figure 23A-23U is not a good illustration The manufacturing process is used to make single-height probes using mushroom-shaped operations to generate these contacts. Figures 24A-24CC are diagrams illustrating the process flow of a specific embodiment of the present invention. The towel is formed at the appropriate layer through a sculpting operation to form the photoresist pattern required to define the contacts, but sacrifices the mushroom shape of the material. The chemical deposition system was postponed until the layers were constructed to a sufficient height, and M allowed to form the largest contact area.

Figures 25A-25D are schematic side views of an optional process at different stages for forming an undercut dielectric pattern similar to the embodiment of Figures 7A-7F. Multiple photoresist deposits are available. Use in combination with multiple exposures. 15 Figures 26A-26H illustrate the process used to make a contact mask, and

The 26I-26M diagram illustrates the use of a contact mask to form contacts on a wafer. Figures 27A-27B are a specific embodiment for producing probe contacts' which includes the production of a photoresist mold having inclined sidewalls. Figures 28A-28S are a specific embodiment related to the method 20 of manufacturing a probe with a probe contact. Figures 29A-29D illustrate a process in which the contact guide surface is drawn due to expansion of the sacrificial material. Eight shapes unfold. Figures 30A-30D are illustrations of a strengthening process that can be used if expansion and expansion occur. 22 200533926 Figures 31A-32B illustrate an optional process to allow polymer molding, followed by a directional plasma etch to remove polymer from the surface of the mushroom-shaped sacrificial material and the bottom of the hole, but let It remains behind the undercut area. 5 Figures 33A-33D illustrate a method in which a copper filler can be used as a way to later release and separate the contact material from a nickel mold. Figures 34A-34D are diagrams of a 2-layer contact structure that can be made using a photoresist first, with a wider first layer and a narrower second layer. Figures 35A-35B are diagrams of probe contacts made in one or more different 10 processes as described herein, which are equipped with an attachment material and are used later to connect the contacts to the probe Sticky. L Embodiment 3 Detailed Description of the Preferred Embodiments Figures 1A-1G, 2A-2F, and 3A-3C illustrate different characteristics of a well-known form of electrochemistry. Other electrochemical manufacturing technologies are proposed in the above-referenced '630 patent, previously different combined publications, different other patents, and patent applications incorporated herein for reference, while there are still other technologies that can be combined Derived from the methods described in these publications, patents, and applications, or are known or ascertainable from the teachings presented here by those skilled in the art in 20 other ways. All of these techniques can be combined with different embodiments of different aspects of the present invention to produce enhanced embodiments. There are still these other specific embodiments derived from the combination of the different specific embodiments explicitly set forth herein. Figures 4A-4I illustrate different 23 200533926 stages of a single layer forming a multi-layer process, in which a second metal system is deposited on a first metal and in an opening located in the first metal, and its deposition Layers of objects. In FIG. 4A, a side view of a substrate 82 is shown. As shown in FIG. 4B, a patternable photoresist 84 is cast on the substrate. In Figure 4C, the photoresist pattern resulting from curing, exposing, and developing the photoresist is shown. The patterning of the photoresist 84 results in openings or apertures 92A-92C, which extend from one surface 86 of the photoresist through the thickness of the photoresist to the surface 88 of the substrate 82. In Figure 4D, a metal 94 (eg, nickel) has been plated into the openings 92A-92C as shown. In Figure 4E, the photoresist has been removed from the substrate (i.e., stripped in a chemical manner 10) to expose the areas of the substrate 82 that are not covered with the first metal 94. In FIG. 4F, the second metal 96 (for example, silver) has been plated to cover the entire exposed portion of the substrate 82 (which is conductive) and the first metal 94 (which is also Conductive). Figure 4G is a diagram showing the first layer of the completed structure, which is formed by setting the first and second metals down to a height where the first metal is exposed and setting the thickness of the first layer. In FIG. 4H, the process steps shown in FIGS. 4B-4G are repeated several times to form a multilayer structure, and each layer in the multilayer structure is composed of two materials. For most applications, as shown in Figure 4] [, one of these materials is removed to produce a desired 3-dimensional structure 20 98 (eg, a component or element). The different specific embodiments, alternatives, and technologies disclosed herein can be combined with chemical techniques or implemented through electrochemical techniques. These combinations are achieved by using a single patterning technique on all layers or using different patterning techniques on different layers to form a multilayer structure. Example 24 200533926 / Different types of patterned photomasks and shading techniques can be used, or even techniques that perform direct selective deposition without shading. For example, in the formation of a gate, a Japanese-style contact mask can be used, while a non-harmonic-type contact mask can be used in combination with other layers. You can use the proximity mask (PrOXimity mask), light work (that is, 'work using a photomask, even if it is not in contact, it will be connected to the i-plate and σ | 5 points to selectively protect a substrate), and Adhesive light 2 and = light operations (photomasks and operations using photomasks, which are attached to substrates that are 'selective'), or opposite to those that are only in contact with them Etching). Figures 5A-5J are diagrams showing the process of constructing the ten-element array at different stages according to the first embodiment of the present invention, and the schematic diagram of the ten-element array is shown in the figure. An electric seed layer is formed on the seed layer coated with an epoxy template, and the bad oxygen template is molded from a Shi Xi wafer that accepts a patterned anisotropic surname. ▲ Figure 5A is not forgiveness of the process after a pattern cut wafer is supplied. The Shi Xi wafer has covered a surface by arranging a photomask configuration and patterning the photomask to have openings in the areas corresponding to the desired probe contact positions. When the mask is in place, an isotropic I engraving is performed to create a V-shaped or conical hole in the evening. Larger than these optional embodiments, the openings can adopt the V shape t C opening / style which is the form required for the probe contacts. The openings 104 and Shixi 102 correspond to the desired probe contact positions and indicate the compliance of the probe contact shape. As shown in FIG. 5B, after the patterned silicon is completed, a wash cast material such as -epoxide 10 is molded to cover the pattern of Shi Xi 25 200533926 " Dagger surface. As shown in Figure 5C, the molded upside-down replica of the patterned silicon is then separated from the silicon. Figure 5D illustrates the state of the process after electrodeposition of a sacrificial material 108 and planarization 5 covering the patterned surface of the replica. The sacrificial material 108 may be, for example, copper. Depending on the conductivity and dielectric properties of the material constituting the replica 106, it is necessary to form a crystal layer or a plating substrate on the surface of the material 106 before the plating operation. This kind of crystal layer can be in the form of sputtering titanium or chromium, and a sputtering seed crystal 10 layer configuration can be covered thereon when preparing for power plating operation. Figure 5E illustrates a state of the process after the plating material 108 is separated from the replica 106. FIG. 5F illustrates a state of the process after a desired contact material is plated on the patterned surface of the sacrificial material 108. 15 Next, as shown in FIG. 5 (3, the contact material 11 and the sacrificial material 108 are planarized to the extent that the individual contacts 112a, 112b, 112c, U2 (L ^ ii2e are separated from each other. Section 5) The diagram illustrates a state of the process after the multiple layers of the structure have been formed, where each layer is composed of the regions of the sacrificial material and the regions of the structural material π 110. At the same time, as shown in level 5 The exposed areas that have been combined with the per-probe element have been selectively applied to the exposed areas—the bonding material 116. Multiple methods can be used, such as, for example, an electrical mining operation through an opening in a light-shielding material. Take the material 116. For example, the material 116 may be a low melting point metal, such as tin, tin, tin tin alloy, or other materials. 2005 20052626 Other solder_ ϋ 1, shell material. As shown in Figure 5H, deposition adhesion After holding the material, return it to a spherical form. After applying the adhesive or bump material, or after the 'probe cutting of the probe elements into the desired groups, where these groups represent a Requires the number and pattern of separate probes available in the application. The diagram illustrates a state of the manufacturing process after the probe structure has been flipped and bonded to the substrate 118 via bumps or adhesive materials 116. For example, the substrate 118 may be a space converter or an intermediate including a required wire network Structure FIG. 5J illustrates a state of the process after the sacrificial material 108 that has caused the probes 120a-120e that have been independently contacted and mounted to the substrate 118 has been removed. 10 As shown in FIG. The layered construction part is not intended to illustrate the characteristics or design form of any bamboo special pin needle, but is intended to show the existence of an elongated structure extending from the substrate 118 to the contacts 112a-112e. The configuration of the probe used is appropriate It can be made compact in form, for example, US Patent Application No. 60 / 533,933 filed on December 31, 2003, and titled 15 is Electrochemically Fabricated Microprobes. The probe form described in the text. The patent application referred to herein is hereby incorporated by reference in its entirety as reference material. In summary, the main elements of the first embodiment include: (1) via A patterned photomask performs isotropic etching of silicon in the form of the desired probe contacts. 20 (2) Cast a free copy of the opening in silicon. The casting material can be, for example, an insulating or conductive material. Epoxy material. Prior to the casting operation, the silicon surface is treated with a suitable release agent to help separate the wafer from the copied pattern. (3) Separate the replica from the silicon wafer. If the surface is non-conductive or non-platable, apply 27 200533926 10 15 20 to the patterned surface of the replica as a crystalline layer. Adhesive layer material if needed. Via 2 application-before the seed layer material, a chemical vapor deposition process, a beneficial deposition process such as a blowout operation, a process, an application process, and / or a direct metallization process may be performed. For example, it can be titanium, chromium, or rhenium. Sticky σ layer material: Qinhe alloy or similar. Seed layer material = For example, ′ may be steel, nickel or any material that can be applied to the adhesive layer to the required height, which is equal to the other material. (3) The sacrifice material is more preferably larger than the height of the protruding portion. Sacrifice material separation, r needle: point steel or some other material, can be immediately connected with the structural material Giving sacrifice helps to carry out the work. Optionally, the use of a -shun or similar operation to give the sacrificial material a necessary consideration == the material is separated from the epoxy mold. ⑻Which is the height required to fill the voids in the surface of the sacrificial material on the patterned surface of the sacrificial material by covering the electric metal with the required contacts.化 The contact material and the sacrificial material are changed, so the contact metal is used to fill the gaps in the sacrificial material separately, and the individual contact areas are bridged. A multi-layer electrochemical process is performed by constructing a probe element from an adhesive layer of a plurality of structural materials, each of which includes the structural material at a desired position and the remaining materials. After the private material layer is set, the -adhesive__composite material = ten -probe elements are selectively arranged on the structural material. This junction uses low temperature metal types such as tin, tin, or other solder materials.

28 200533926 ,,, ° & What can be selected in multiple ways After the light-shielding material is selected, it can be applied >. For example, after the 10 15 20 light and selective power mining operation is performed, after the material flows back, it can be shielded by a probe element. (11) Regarding the formulation, it can be cut into smaller pieces with a sleek form covering each group of probe elements in the desired form, such as a space converter or a probe. The required bits are used in a flip-chip process to change the probe element = structure or similar. 02) Board bonding.秘 Remove the sacrificial bond or adhesive material from the individual probe elements of the substrate by mold removal and separation. ... Is used to shake the substrate to an optional embodiment of the needle element. In this specific embodiment, some changes are made to produce mono-probes and other selective pattern materials: 2 patterns can be in the form of pin contacts. Figures 6A-6E using other shapes are used to form an array of probe elements according to the present invention, which is used to construct the example similar to the first embodiment of the present invention. The μ is at the structure of the contact. The material used is the same as that used in the rest of the probe element—Figure 6A shows the state of the process after the contact material is deposited into a sacrificial stretched material 152. If the sacrificial molding material 152 is not conductive or non-platable, a crystal layer and possibly an adhesive layer are formed on the mold surface before the plating material 150 is plated. In a variation of this embodiment, the material 150 may be disposed on the patterned surface of the material 152 using a process other than a plating operation. Figure 6B illustrates the process where the contact material 150 and the mold material 152 have been flattened, and 200533926 is used to make the contact components 150a-150e by removing any bridging material 150 that connects the components after the deposition operation. Independent green shape. 10 15 20 FIG. 6C illustrates a state of the process after a plurality of layers of the probe element have been formed according to an electrochemical process, each of which includes the regions of the sacrificial material 154 and the regions of the structural material 156 . The areas of the material on each layer are defined by the required cross-sections of the array of probe elements associated with the cross-section. After forming all the layers 158, an adhesive-bonded bonding material 160 is selectively arranged to cover the ends of the structural material 156 (that is, to cover the ends of the probe element). The material 160 is selectively applied through the light-shielding surface 162 of the layer 158, and then the material 160 (e.g., tin, tin-lead, or other solder-like materials) is electrodeposited into the openings in the human photomask. After the electricity is completed, the photomask can be removed and the bonding material 160 can be heated if necessary, so it flows back to the balls or bumps used to form the material. Figure 6D illustrates a state of the process after the probe element 164 array has been bonded to the substrate 166 by a bonding material ⑽ and the sacrificial material 154 has been removed. The order of the attaching and removing operations can be performed in any desired manner. In other words, some variations of this specific embodiment order can be removed before the attaching operation. The other meanings of the specific implementation " 'can be performed before the removing operation. ^ Other variations of the present invention in which the sacrificial material is removed before the mounting operation = The bumps constituting the adhesive material are removed before the sacrificial material is removed before the structural material is attached to the structural material constituting the probe element. Other changes in this embodiment In the form, a material different from the sacrificial 30 200533926 5 10 15 20 material 154 may be used to form the last layer of the probe tree. This different material may be a conductive or dielectric sacrificial material, or it may be a -dielectric structural material. This different material can be placed in place as a thread forming process for the (etc.) final part, or it can optionally be layered in layers and sacrifice material removed from the surface 162—or more Place the layer afterwards. After placing the different materials in place, the surface 162 can be replanned and then formed into a bump 160. In a further variation of this embodiment, the bumps may not be directly formed on the structural material 156 but may instead be formed at a desired position on the substrate 166 and then during the bonding process and the probe The needle element 164 is in contact and engaged. FIG. 6E illustrates a state in which the manufacturing process forms the independent probe elements 164a-164e on the substrate 166 after removing the original sacrificial material 152 of the holding contacts 150a and 5b. If different materials described in one of the above variants are used, the different materials can be removed before or after the bonding process is performed, or the final structure can be retained as part and actually used to strengthen the probe elements 164a-164e Adhesion to substrate 166. Figures 7A-7F are schematic side views of a process for constructing a probe element at different stages according to a third embodiment of the present invention. The probe element contacts are made with an undercut. Is composed of a prominent patterned photoresist. Figure 7A illustrates a state of the process, in which a temporary substrate 182 is coated with a negative photoresist material 184, such as Futurrex NR9-8000, which has one or more openings 188 through which radiation 19 passes directly, Used to expose photoresist materials. The opening 188 corresponds to the position where the probe element contact material 192 is finally arranged on the substrate 31 200533926 182. FIG. 7B illustrates a state of the process after the substrate 182 and the photoresist 184 have been immersed in the developing / valley solution 194 'so that the unexposed portion of the photoresist 184 is removed and the exposed portion 184a is retained. 5 帛 7C_ The process shown in FIG. 7C shows the state after exposing the button to the developer solution, so that it becomes a state after the photoresist is over-developed before undercut formation before the formation of the trapezoidal element.

10 15 Figure 7D is a diagram showing the state of the manufacturing process after the photoresist element is used as a photomask. This operation product sacrificial material ’is the same as or different from the substrate material 182 deposition operation. If the deposition of sacrifice 196 is not sufficient, a planarization operation can be used to achieve the form shown in Figure 7D. Figure 7E is a graphical representation of the process where the probe contact material 192 has been deposited by A state after removing the voids created by the photoresist material 184b. If it is necessary to give the probe contact material 192 and the sacrificial material 196 a desired surface form, they can be used. The planarization of the upper surface of the helium material is used to produce a form not shown in Fig. 7E. The first figure shows the state of the process after the electrochemical manufacturing operation of multiple layers. One end of the produced probe element 202 is bonded to the probe contact material and the other end is bonded to the adhesive material. After forming a complete probe contact diagram) or a wooden pin contact array (not shown), the sacrificial material can be removed and the probe element can be bonded to a substrate after the delta substrate 182 is removed. '' When it can be directly deposited in a variation of this embodiment 32 200533926 The wood drill 0 material 200 need not be surrounded by the sacrificial material 196. In this state, or if the majority of the sacrificial material is removed, i is sufficient to combine the probe element 202 with the household substrate through the bonding material before removing all the sacrificial material. In these situations, the temporary substrate material 182 may be removed after the adhesion process is performed. … The variations and characteristics of this specific embodiment can be applied to the specific embodiments of the temple previously described or the variations of these specific embodiments to be described later, just as the variations and characteristics of the previous specific embodiments can be applied to Further variants of this specific embodiment or the specific variants of these specific embodiments which will be described later will be applied to produce the characteristics of the different specific embodiments and their variants which will be described later. This specific embodiment or a further variation of the specific embodiments described above. 8A-8F are schematic side views of a process for forming a probe element at different stages according to a fourth embodiment of the present invention, in which the contacts of the probe 15 element are made with side walls that are pushed outward. It consists of a constricted portion in a patterned photoresist. FIG. 8A illustrates a state of the process after a temporary substrate 212 is coated with a positive photoresist 214 and a photomask 216 having one or more openings 218 disposed above the photoresist. 20 FIG. 8B illustrates the process in which the exposure photoresist 214 is developed and thus over-developed to create the (or other) opening 222 with the push-out sidewall 224. FIG. 8C illustrates a state of the process after depositing a probe element contact material 226 into the opening 222 of the photoresist 214 and then removing the photoresist. 33 200533926 Figure 8D shows the manufacturing process after sacrificing; the board 212 and the covering probe contact material 226. Figure 8E shows the state after manufacturing. A state after the sacrificial material 228 is electrodeposited to cover the substrate 226. The process is to place the sacrificial material and the probe contact material plane

-At the end, including an adhesive or bonding material 234. Furthermore, as for the phase Hθ 1. IO / h, as described in relation to the foregoing specific embodiments, the probe element 23 or the needle reading (not shown) can be self-sacrificing material and can be removed from the temporary substrate. It is bonded to a desired substrate via an adhesive material 234. -In the variation of the above-mentioned specific form, the large slope or pushing degree of the photoresist material produced is not only the result of over-development, but also the result of underexposure and / or customized baking operations. . Figures 9A and 9G are schematic side views of different stages of the process for forming a probe element array according to a fifth embodiment of the present invention, in which the π and 'ten-element contacts are made of a patterned photoresist material. The protruding portion covers the patterned photoresist material as a Qin shape and an electroplated material etched through the opening. 20 FIG. 98 illustrates a state of the process after a temporary substrate 232 is coated with a crystal layer material or a seed layer stack 234 and sequentially coated with a photoresist material 236. A photomask 238 including openings 240a-240e is disposed above the photoresist material, and the round shot 242 is exposed through these openings and can potentially pattern the photoresist material 236. 34 200533926 Figure 9B is a diagram showing the process after developing the exposed and potentially patterned photoresist 238 to produce the small plugs 238a-238d of the photoresist material that will block the position of the probe contact element. A state. FIG. 9C illustrates a state of the process after depositing a sacrificial material 244 into the openings between and adjacent to the 5 photoresist plugs 238a-238d. If desired, the photoresist plug and deposited sacrificial material 244 can be planarized to produce a structural form as shown in FIG. 9C. In a variation of the specific embodiment, the planarization operation may not be needed, and in other specific embodiments, the planarization operation helps to improve the uniformity of the mold pattern produced. Figure 9D shows the state of the process after the additional deposition or continuous deposition of the sacrificial material covering the photoresist emboli has been mushroomed outward. In the context of this application, the mushroom formation related to the diffusion operation in the plane of the dielectric material covering the dielectric material is increased by 15% with the height of the deposition. Figure 9E illustrates the amount of mushroom formation required to complete the process (ie, the amount of overflow of the conductive sacrificial material deposited on the dielectric photoresist plug) and when the reactive ion etching (RIE) exposure 246 has been completed. Isotropic etching passes through the photoresist plug to create an opening 20 that extends from the electroplated substrate 232 through the dielectric and sacrificial material. The openings and surrounding conductive and sacrificial material form a mold in which a probe can be deposited. Needle element contact material. The probe contact material may be a single material 248 (see section consisting of filling openings 250a-25d), or may alternatively be an auxiliary contact material (not shown). Supports a relatively thin coating of the required material. If needed, after the deposition of probe contact material 248, the surface of 35 200533926 sacrificial and probe contact material can be planarized to produce Figure 9G is a diagram showing the manufacturing process on the plurality of electrochemical layers, after the completion of the probe element 252-5 composed of a structural material 254 and a sacrificial material 244, and the deposition or adhesion A state after bonding material 256. Just before In the illustrated specific embodiment, the probe elements can be cut individually or in a desired array pattern to remove the temporary substrate material, remove the seed layer material, remove the remaining photoresist material, and pass the probe element 252 through 10 Bonding or bonding material 256 is combined with a desired substrate. Figures 10A-10C are schematic side views of the process for forming a probe element array according to a sixth embodiment of the present invention at different stages, in which the pin The element contact is made of a patterned photoresist material with a protruding portion made of a plating material to cover the patterned photoresist material 15. The specific embodiments of Figures 10A-10C are the same as those of Figures 9A-9G. The specific embodiment of the figure is similar, except that the photoresist material covered by the mushrooming operation of the sacrificial material is not etched. Figure 10A shows the process of filling a probe contact material 262. The gaps 264a to 264d, but the deposit is a state after the side of the sacrificial material 244 has grown horizontally by 20. Figure 10B is a diagram of the ητ process after the openings 264a to 26 are filled with the probe contact material 262. Receive A state after performing planarization to remove these portions of the material 262 that bridges the sacrificial material 244 and connects the individual probe contact elements together. 36 200533926 Figure 10C shows the process after the material has been electrochemically fabricated 254 and 244 layers of sacrificial material complete the probe section 266, and the state after the material 256 has been bonded or bonded. For the specific embodiment of FIG. 1%, the 'probe element 266 can be attached to the bonding material 256 via 5 The substrate and the sacrificial material 244 are removed together with the photoresist material 238, the seed layer material 234, and the temporary substrate 232, so as to generate a plurality of independent probe elements, the required material interconnection elements, and The analog disk-substrate connection. Figure UA-11F is a schematic partial penetration, a perspective view, a side view along a central cutting plane, and a process for forming a probe contact array at different stages according to a seventh embodiment of the present invention. In the top view, the probe contacts are formed by using a patterned-deposition mold, and the mold constitutes a plurality of voids covered by the overlay deposition (one void per contact). Give it a desired shape. 15 f 11 is a three-view view of the state of the process after the substrate is supplied-"view 302" is a perspective view of the substrate. The view is the side view of the substrate along X vehicles, and the view 302_3 is the top view of the substrate in the χ γ plane. The substrate 302 is a -f substrate, and can be made of a conductive material or a dielectric material having a seed layer thereon. 2 0 Figure UB illustrates three views of a substrate on which a deposit has been patterned on one of a sacrificial material (eg, copper). The sacrifice material 304 was modified to contain two voids 30W and 306_2. These gaps indicate the probe contacts: the positions where they will be seated, and in this description, 'only constitutes two probe contacts. Of course, this process can be used to form a single probe contact or to form a package = 37 200533926 probe array with dozens, hundreds, or even thousands of components. For the figure iia, the different views of figure 11B in combination with the coordinate axis symbols are shown showing the perspective taken. Figure 1ic is a three-view diagram illustrating the state of the process after the overlay deposition 5 of the sacrificial material 308 is performed. The material 308 may or may not be the same as the sacrificial material. The overlying deposition of the material 306 causes voids and the filling and closing of the initial deposition of 306_2 from the material 304. The closing of the void results in an inclined wall of the material 308 surrounding the unfilled portions of voids 306-1 and 306_2. The filling operation of the gap 30M is performed up to a position shown by 312] while the filling operation of the gap 306-2 is performed up to the line element 3122. The shape of the unfilled part of the void depends on the initial residues_0 and the form of the void 306] and 306_2. FIG. 11D is a three-view diagram illustrating the state of the process after the deposition of the sacrificial material (ie, nickel), after the planarization operation, and after the removal of any light-shielding material related to the patterned deposition. The covered deposits of material 3G6, as not shown in the figure, provide the required void form 314 2 and 3M-1 ', whose shape is complementary to the desired shape of the probe contact formed. The operation of Fig. 11D results in the production of probe contact elements and training fingers 316-2 〇20 The UE diagram shows the process after the deposition of another sacrificial material 320 'and the state of the state after planarizing the final deposit. view. The sacrificial material 320 may be the same as the sacrificial articles and 3_, or may be different from one or both of the sacrificial materials. The performance of the deposition and planarization operations in the UE figure is based on the assumption that the structural material layers constituting the probe element are added to the contacts such as 38 200533926, as shown in the previously different specific embodiments proposed here. If the addition operation is not performed, the operations of FIG. 11E are not required. FIG. 11F is a three-view diagram illustrating the state of the process after each sacrificial material and substrate have been removed, and the additional structural layers (eg, the additional layers of the probe element 5) are performed in parallel. 10 15 20 The seventh specific embodiment of the present invention shown in Fig. 11A-11F, including the following main tasks! (1) Supply a substrate. (2) In these positions that cause the probe contact element, a first sacrificial material is patterned and deposited on the substrate, leaving openings or voids in the sacrificial material. The sacrificial material can be patterned in different ways, for example, a light-shielding material is first patterned and disposed on the surface of the substrate, and then the sacrificial material is plated on the exposed areas of the substrate. Optionally, the overlaying deposition of the sacrificial material is performed after patterning the shading operation and selecting the 14-minute operation. In an alternative solution, for example, the direct deposition of the material can be performed by inkjet printing or the like. (3) Overlay deposition- and first-sacrifice material ιZΓ sacrificial material, used to construct a second sacrifice material to cover the 2 areas of the first, and used to partially fill the = space of the first-sacrifice material, resulting in the first Two sacrifice materials produce the necessary complementarity. Neutralization = patterned deposition of these voids into the second sacrificial material. The required form of the structure material can be performed in multiple forms. The masking material configuration covers the second sacrifice :: product: for example, the structure can not be accepted by patterning and the part of the structural transition is accepted. ", OK. (5) The surface of the structural material and light-shielding material Selectively planarize at-the required height. ⑹ Assuming that these additional material layers are added, the third sacrificial material can be deposited. The first and second sacrificial materials can be combined with any of the first and second sacrificial materials. Yes the two == is: the same. The third method can be covered or patterned. If necessary, 'then planarize the surface of the deposition material', so the two sacrifices and structural materials are exposed and ready to accept the tray construction wood. ^ Piece or similar additional material deposition. For example, using the electrical manufacturing technology disclosed elsewhere to build the required structure 10 15 20 2 carelessly to the probe contacts and other probe structures; Piece: plate. The demolding operation can be performed before or after the probe element is combined with the new substrate. The seventh embodiment may have a plurality of optional solutions. For example, 4: = 料 之After patterned deposition and removal The conclusion: First = before, the surface of the sacrificial material can be planarized, and the second surface can be created as a starting point for subsequent operations. In another embodiment of the embodiment, in a variant, a second sacrificial deposition method is used. The engraving of the job and the deposit material Γ, I avoid the work shirt to touch the whole thing continuously. In particular, Γ will remove any unequal gaps in the surface of the second material: the second miscellaneous needle contact element is used. Any irregularities of the second sacrificial material should be flattened. Wherein, after the second sacrificial material deposition operation, the "temporary conductive or dielectric material is filled, and the surface of the sacrificial material is planarized. After that, the temporary material is removed. This planarization operation can improve the quality of the two 40 200533926 pin contact components slightly offset from the contact area. "Through another embodiment of the embodiment-in a variant form, the structure of the sacrificial material can be reduced, so that the deposition of the sacrificial material is 22:" redundant "and the deposition of the structural material can be-overlay deposition Or, k # becomes a selective deposition. 10 15 mouths This carefully considers the specific embodiment illustrated. The contact element is missing before the material _ part. In the case of: = 4 cases, for example, 'For example, It should be understood that these #pieces (ie, 'extensions') that can constitute the probe element, and later used to construct and adhere the contact element to these arm pieces. The plural specific examples discussed so far Figures 12A-12E are schematic partial penetration and perspective views of the process of forming the probe contact and car train according to the eighth specific embodiment of the present invention at different stages. The probe contact is composed of a structural material surrounded by a sacrificial material or a part of a light-shielding area of the contact material, and then the structure or contact material is used to achieve the required riding contact with respect to the sacrificial material. Point format. * Figure 12A is a diagram This process state is the initial state, in which a probe element 334a.334d (I_ has been formed on a substrate 332, and is encapsulated with a sacrificial material 20 336 (except-the upper surface). In this embodiment In some variations, the substrate may be a temporary substrate, while in other variations, the substrate may be a permanent substrate. Figure 12B illustrates the manufacturing process in which a desired form of light-shielding material is configured to cover at least the element 334a. The state of the -334d contact is composed of the structural material 338 41 200533926. The shading operation can present multiple patterns. For example, as shown in element 342a, the shading material can be opposed to one of them. The last layer of probe material 338 is placed at the center, as shown by element 342b. The light-shielding material can be shifted towards one of the probe elements, one side or the front side, or 5 back sides, as shown by element 342c. The light-shielding material may be a circular patch covering the contact material at the center, or as shown in element 342d, the light-shielding material may be a square patch configured to cover the contact material. Figure 12C Illustrated process at A state after performing a selective engraving operation on the structural material in the unshielded area. 10D is a diagram illustrating a process after the photomask material covering the structural material that has been etched has been removed. FIG. 12E is a diagram showing a state in which, after removing the substrate and the sacrificial material, the elements 334a-334d having the contact structures 344a-344d are left in contact with the mask size, its position, and exposed to the etchant. The relationship between the size of the structural material is 15. In this specific embodiment, the probe element is in the form of a lever arm structure, as opposed to some of the forms presented in the previous specific embodiments. Those skilled in the art should understand It is to be noted that the probe structure may utilize the probe contact manufacturing technology of the specific embodiment, or may be the form shown or the form presented in the previous embodiment. Similarly, those skilled in the art should understand that the probe contact manufacturing technology of these specific embodiments must be combined with the construction of the cantilever beam structure of this specific embodiment. Those skilled in the art should understand that the probe contact material may be different from the material used to form the rest of the probe element 'or it may be the same material. Knowing this 42 200533926 === is that the contact material associated with the probe element can be different. Materials, for example: from a selected lightning storm, "h1 is applied after the contact is staggered" process or similar 5 10 =, optionally, can be deposited during the operation on the contact structure itself The contact material. ^ ^ ^ ^ ^ ^, The embodiment should also be understood by people in agriculture and agriculture, different probe contacts in the probe contact array, similar contact forms, or Optionally, there are different forms depending on the way it is constituted and the purpose for which "..." is used. "

The H13C® series is a schematic side view of the ninth embodiment of the present invention for forming & needles in a 70-piece array at different stages. It is issued at a distance from the previous component of the file. In the storm area of the contact elements, the patterned light-shielding material is configured to cover the contact material, and the contact points are __removed into other parts of the probe contact points. Structure 15 Figure 13A shows the manufacturing process

The multiple stacks and adhesive layers of 354 constitute a state after a plurality of probe elements. The layers are formed on a substrate 356 which may be a temporary substrate or a permanent substrate. The final layer for constructing the probe element is covered with a probe contact material 358 layer, which is covered with a patterned light-shielding material in turn, and the plug of the light-shielding material covers the probe contact elements with 20 Existing location. The size and shape of the plug of the light-shielding material will govern the final contact form after the needle contact material is engraved using the money engraving agent 362 isotropically. FIG. 13B illustrates a state of the process after the etching operation has been completed and the probe contact material I is etched and the sacrificial material is exposed. Institute of Light-shielding Materials 43 200533926

State, which produces the probe element 3c_3 array of substrates riding on the substrate 356 and includes the shielding effect, and provides the contact 368 of the required form for the operation, implementation, and operation.

A schematic side view n of the same stage is used to form a probe contact having all existing $ φ 10 15-row elements and having a first contact form. FIG. 14A illustrates a state of the process after the substrate material 372 is supplied_required, and FIG. 14B illustrates a state of the process after the substrate material 372 is selectively etched and the gaps 374a-374e are completed. An etching operation to generate the voids 374a-374e can be performed by passing a pattern of a mask material on the surface of the substrate 372 through this position. For example, the substrate 372 may be Shi Xi, and the after-etching agent may be, for example, KOH. FIG. 14C illustrates a state of the process after a molding material (e.g., an epoxy material) 376 is cast onto the patterned surface of the cover substrate 372. Figure 14D illustrates a state of the process after the molding material 376 is cured and separated from the patterned substrate 372. The distance between the protrusions 378a-378e on the tool 380 corresponds to the position of the probe contact element, for example, as described in the specific embodiment of FIG. Figures 15 A -15 D are schematic side views of a process used to form an embossing tool at different stages. The tool is used to form the -part of an array that has only 44 200533926 elements and has a second contact form. Probe contacts. 5 10 The process state of tf shown in Figures 15A-15D is similar to the process state shown in Figures 14A_14B. The difference is that the form of void micro and Wei system secret seal is different from that of void micro and 374d, and The place where no gap is formed in the substrate tearing corresponds to the position where the gap intent of the MB figure permeates the emblem. For its part, after the tool 390 is completed from the cured molding material, the red tool contains only a portion throughout the coffee.

Comparing the guards in Figure i and Figure 14D, consider that the tools in Figure ii include only the part of the protrusive components that are necessary for the complete probe to receive the material, and those projecting parts in md To form a complete array. After reviewing the following specific examples, it should be understood that each tool can form a probe element having a contact of a desired form. Column 0

Figures 16A-16M are schematic side views of a process for forming a probe element array according to the tenth embodiment 15 of the present invention at different stages. ^ An embossing tool made according to Figures 14A-14D is used. Composition probe = component contact. Figure 16A illustrates a state of the process after a substrate 402 is coated with a photoresist gas or other polymeric material 404. 20 Figure 16B shows the manufacturing process after the embossing tool 380 has been placed against the material 404. At the same time, Figure 16C shows the manufacturing process at the plant. A state after being raised. FIG. 16D illustrates the process in which the tool 380 has been removed, leaving a substrate 402 having a material 404 disposed thereon, and a void 406A-406E in the polymer material. Figure 16E illustrates a state of the process after a crystal layer material 408 is applied to cover the patterned polymeric material 404. The seed layer material can be any suitable sacrificial material, which can be separated from a probe contact material without damaging it. For example, the seed layer material can be sprayed with copper, tin, gold, or similar materials. Before the seed layer is formed, an adhesive layer may be disposed on the surface of the patterned polymer material, if necessary. FIG. 16F illustrates a state of the manufacturing process after a probe contact material 412 is electro-forged to cover the electric ore substrate 408. As shown in the figure, the deposition operation of the probe 10-point material 412 is performed in a cover form. In a variation of this embodiment, the probe contact material may be deposited in a selected manner, so that the areas between the probe contact positions 414A-414E do not accept the probe contact material. 15 20

In the modified form, the shielding and deposition-sacrificial material (which is the same as the seed layer material) associated with the selective deposition operation can be removed, and then the sacrificial material and the probe contact material are planarized to one of these structural layers. Constructable

The desired height above it. τ Optionally, before removing the storage material, a combination of shading 1 and box mining Γ can be used to planarize the material as f. Then go to _light material and then add sacrificial material. If necessary, perform another _ planarization operation. And the sacrifice is shown in the process of flattening the probe contacts ... The height of the material (for example, the seed layer material) is adjusted to the same as the "Gaul"-". The 16G figure is completed As a result, fake ㈤ 46 200533926

= 16H Picture 81 shows the state after the multiple layers of structural material 416 and sacrificial material 418 have been deposited to construct the structure of the probe element. The structural material may be, for example, nickel or a nickel-alloy, and the probe contact material, for example, 'may be rhodium or baht' and the sacrificial material 'may be, for example, copper or tin. As shown in the simplified diagram, although all of the probe element contacts are configured in an array form, not all related probe element structures are constituted. In particular, the contact points 414A, 414B, and 414E of the probe 10 already constitute related elements of the probe structure, but the contact points 414C and 414D do not constitute related elements of the probe structure. During the dream process-continued operation, connect the probe to pure 4CA414d from the probe array = remove.

In an optional embodiment, the positions of the probe contacts can be simply masked before 15 of the probe contact material is deposited, instead of constituting the probe contact elements 414C and 414D. I

Figure 161 illustrates the state of the process after the -adhesive or bonding material is selectively deposited on the ends of the probe structure. Figure 16J shows the state of the process after the bonding material has flowed back to form a 20 or spherical form. Figure 16K, which has been reversed and bonded to the first bonding material, shows the state of the process after the unmolded probe structure contacts a permanent substrate 424. The substrate includes the positions of the material 426 and the positions of the bonding material 420. Corresponding region 16L of the permanent substrate junction is a diagram showing a state after the process of combining the probe structure with 47 200533926 and removing the sacrificial material 418. Figure 16M illustrates the manufacturing process at the probe contacts 414a, 41413, and 414 (1 has been demolded from the seed layer material, polymer material, and substrate 402 to produce a complete probe 426a, 426b and 426c. Figures 17A-17L are schematic side views of a process for forming a probe element array according to the eleventh embodiment of the present invention at different stages, wherein the pressure produced according to Figures 14A-14D is used. Flower tool make up probe

Element contact, the embossed material is conductive and does not constitute a selected probe element. 1〇The process of 17A ″ 71 ^ is similar to the process of FIGS. 16A-16M, except that the seed layer of FIG. 16E is not necessary (when the raised material is a conductor, such as this specific Tin in the examples). FIG. 17A is a diagram showing a state after the process of providing a holmium substrate having a planarized coating having a conductive sacrificial material 454 disposed thereon. What is the M sacrificial material 45-a suitable material that can be removed from the probe interface without damaging the contacts and capable of being removed from the substrate 452 material.

In some variations of this embodiment, the sacrificial material 454 and the A-plate material 452 may be one and the same material. Soil Figure 17B shows the state of the process after embossing and contact. Figure 1 shows the first state of the tool and the sacrificial material. The figure shows the state of the process after the embossing tool is said to have passed through the material 454. For example, this can be accomplished by heating the flower worker 380 and / or the sacrificial material such that, among the bits that make contact, the 'sacrifice material is flowable and can be flowed or otherwise 48 200533926 The dominant shape is used to achieve the patterning operation performed by the tool 380. Corresponding to the _ system shown in the figure-making process after the tool 38 has been removed from the raised material, leaving a gap to clarify its position: Ten contacts can exist in the _probe contact array formed Figure ΠE of these positions in the figure shows the state of the process after the -probe contact material is deposited over the patterned surface of the sacrificial material 454. Figure HF shows the state of the process after the sacrificial material and probe contact material + ^ 10 are surfaced to a common height. Figure 17G is a diagram showing the state of the process after the probe elements have been completed due to electrodeposition of multiple layers, where each layer contains these areas where the structural material steals, which are relative to the locations of the probe element and the sacrificial material 464. correspond. The sacrificial material 464 may be the same as or different from the sacrificial material 454. Figure ΠΗ is a diagram showing a state in which the bonding material or the binding material is partially patterned and deposited on the uppermost surface of the probe structure. Figure 171 illustrates the state of the process after the bonding material 466 has flowed back so that it has a circular or bubble shape as shown in Figure Θ. Figure 17J illustrates a state of the process after the unmolded probe structure is reversed and combined with a 20 water substrate 468, which includes a second bonding material. The areas of the first composite material 466 on the electrochemical manufacturing structure layer of the needle element correspond. Figure 17K illustrates the state of the process after the sacrificial material 464 has been removed. 49 200533926 Figure 17L is a diagram showing the state of the process after the original substrate 452 and the sacrificial material 454 have been removed, thereby producing the release probe structures 472a, 472b, and 472e combined with the permanent substrate 468. As shown in FIG. 17G, the probe contact areas 474a, 474b, and 474e have a structure 5 material corresponding to the bonded probe element, but the probe contact elements 474c and 474d do not have a structural material. For its part, after the sacrifice material 454 and the substrate 452 are finally separated from the probe member combined with the substrate .468, the contact elements 47 such as 47 去除 are removed. 18A-18J are schematic side views of a process for forming a probe element array according to the twelfth embodiment of the present invention at different stages, in which embossing made according to FIGS. 14A-14D is used. The tool constitutes the probe element contact, and the selected probe element and the probe contact are not constituted therein. A starting structure in Fig. 18A is similar to the structure shown in Fig. 17F, and has a light-shielding material 472 disposed above the probe contact element. 15 FIG. 18B is a diagram illustrating a state after the process of patterning a light-shielding material over the probe elements 474c and 474d to be removed to cause the opening (s). FIG. 18C is a diagram showing a state where the probe contact material 438 is removed from the probe contact positions 474c and 474d in a selective lasting operation. FIG. 18D illustrates a state after the light shielding material 472 has been removed during the manufacturing process. The first diagram shows the state after the process of electrochemically manufacturing a plurality of layers over the probe contact element. Specifically, a structural material is deposited on the same sacrificial material 464. In the process of forming the electrochemical manufacturing layer, the voids 476c and 476d are filled with the sacrificial material 464. The 18F-18J picture is similar to the 1711 view, so it is not detailed at this time. 50 200533926 plus S brother Ming ’The difference is that the probe contact element 474c or 474d does not need to be removed once it is finally demolded. Figures 19A-19N are schematic side views of a process for forming a probe element array according to a thirteenth embodiment of the present invention at different stages. 5 Figures' Some of the probe elements have different heights and different connections. Point form, and the embossing tool made according to FIGS. 14A-14D and 15A-15D is used to form a probe contact element. The process of FIGS. 19A-19N starts from the state of the process of forming a microstructure array as shown in FIG. 17G. Xin 10 FIG. 19A illustrates a state in which the process etches an opening through a plurality of deposited sacrificial material layers in the areas covering the probe contacts 474c and 474d. An etching operation can be performed by masking the upper surface of the final structure layer with a light-shielding material, patterning the light-shielding material to arrange an opening in the areas of the probes 47 牝 and 474d, and then etching Enter 15 sacrificial material and remove the mask. FIG. 19B illustrates a state of the manufacturing process after a bumpable sacrificial material is disposed at least in the opening σ that touches through the sacrificial material layer. As shown in Fig. 19B, the embossable sacrificial material 482 covers the deposited material to cover the previously deposited material. 4 The bumpable sacrificial material is tin or copper or a similar material. The 20 帛 19C diagram illustrates the state of the process after planarizing the deposited bumpable sacrificial material to remove it from all locations except for filling and etching through the opening of the sacrificial material. Figure 19D shows the state of the manufacturing process after the embossing tool 3_ has been placed in contact with the embossable material 482, and Figure 19E shows the manufacturing process at 51 200533926 after inserting the tool 390 into a raised material 482. A state. Fig. 19F shows a state of the process after the embossing tool 39o is removed. Figure 19G illustrates the process in which a desired probe contact material is deposited to fill the holes 48 牝 and 484 (1 in the raised material 482). For example, the probe 5 contact material may be baht or Rhodium. Figure 19H is a diagram illustrating a process in which the deposition material is cut back to a height corresponding to the final structure layer formed in a planarization operation. In a variation of this embodiment, Initially, the final structural layer formed may have a height exceeding the level, which results in different planarization operations due to a processing operation that causes the process state illustrated in 10 in FIG. 19h, and is cut down incrementally until Until the required height is completed, Figure 191 illustrates a state of the process after forming a plurality of additional structural layers, where the additional structural layers include structural materials, the regions and the needle grasping elements and the sacrificial material disposed therebetween. 15 The first figure shows the process after all structural layers have been removed, and after applying-bonding or bonding materials, such as tin or tin oxide or other solder-based materials or similar materials selection Sexually Figure 19K is a state after the structural material covers these areas. Figure 19K is a diagram showing the manufacturing process after the bonding material flows back to create a circle or 20 is a significant appearance. Figure 19L is a diagram showing the manufacturing process has been The probe structure is reversed and disposed adjacent to a solder pad on a permanent substrate 490 (for example, a space converter). The first figure shows the process of adhering the probe element to the permanent substrate 490 and removing the sacrifices. The shape after the material 464. 52 200533926 5 10 15 20 "The first leg is a diagram showing the process of removing the sacrificial material 454, the substrate 452, and the material 482: the demolding probe array attached to the permanent substrate :: 的-: State. As can be seen in the figure, 'it makes the three-probe element have a directional connection, and the other needle element has a circular contact form. Similarly, the two elements in 1 are essentially different from the others. The two elements are more elongated than the system.

The Air1- JU + that is familiar with this technique is the array of probe elements that can be used to make the first + -process of the present invention, and has a combination of a plurality of probe elements, a ㈣ connection, and a simple (whether single I Height = is multiple height), single- or multiple or variable height probe elements and /: probes 4 of different structural forms (for example, vertically stretched elastic element and generally horizontally stretched material elements). \ Ε Figure is a schematic side view of the _ manufacturing process at different stages for the implementation of the fourteenth embodiment of the ^ needle 70 pieces according to the fourteenth embodiment of the present invention. Protection * Coating of required contact materials affected by the sacrificial material used. + The process of Figures 20A-20E can be used to form a coating on a probe contact and to protect the probe contact material from an incompatible sacrificial material tincture or the like. . Figure 20A is a diagram showing a state in which the sacrificial material has been coated with a patterned sacrificial material 504 (e.g., 'copper'). The substrate 502 can be the same sacrificial material as 504, or can optionally be some other sacrificial material or 'locally or even-a structural material, which can eventually be separated from the probe contacts. ° Covering the substrate 502 The opening through the sacrificial material 5 corresponds to the positions constituting the probe contact element. 53 200533926 Figure 20B is a diagram showing a state after the process is completed to cover the protective substrate 5006 with the overlay deposition of the protective material and the sacrificial material. Next, a probe contact oceanic material 508 is deposited over the protective material 506 and then a structural material 510 is deposited overlying. 5 The 20C® is shown in Figure 2. After flattening, the protective material 5106, probe contact coating material 508, and structural material 510 will be covered after the sacrificial material 504 and other areas are removed. A state. As shown in Figure 20c, the probe contact coating material 508 is separated from the sacrificial material 504 by a protective material 506 coating. The 10㈣ relationship shows the state of the process after adding structure and additional layers of sacrificial material. In particular, it should be noted that the structural material of the probe element of the constituent part is configured to have an extended width, completely covering the probe contact, the layer material and the protective material. Since the size and form of the second layer are selected to cover the needle contact coating material, the probe contact coating material 15 is sandwiched between the structural material 510 and the protective material, so any The scribing operation is to remove materials such as 4 without causing damage to the probe contact coating material 508. —Figure 20E shows the contact state of the probe shown in the “state” shown after the formation of a bullet-shaped probe element in the manufacturing process is still covered with a protective material and a pin contact coating material. In subsequent unshown operations, = 506 is used to remove the protective material to produce a probe element having a desired probe contact coating material. Anyone who knows this should understand that although the specific embodiment does not show pin contacts and probe elements, the principle proposed by 54 200533926 process in this specific embodiment can be expanded and produced simultaneously- An array of probe contact elements or a plurality of arrays of probe contact elements. 21A-21F are schematic side views of a process for forming a probe element according to a fifteenth specific embodiment of the present invention at different stages, a straight probe contact fixture-pushing form, and a A coating that prevents accidental contact with the desired contact material in the constituent probe elements that is not affected by the sacrificial material used. Fig. 21A is a diagram showing a state in which the substrate $ η receives a patterned deposition of a sacrificial material. The substrate, for example, may be a structural material that can be separated from the (or) probe contacts constituting it later, or alternatively, it may be that the sacrificial material is destructively removed from the formed needle contact elements. . Private to the specific implementation examples-some changes 514 the same material. In the second embodiment of the sacrificial material of the present invention, the sacrificial material 514 may be copper, tin, gold, or similar materials. The material shakes. Figure 15 shows the process using electrochemistry to make the openings extending there through the K state. After the corner of the sacrificial material of 1 is smooth, FIG. 21C shows the manufacturing process of the protective material 516, the deposition of the probe material 518, and the state of the probe interface. ~. A 21D image after the deposition of the structural material 520 is a diagram showing the state of the process after the first operation is a flat payment of the deposited material. The state of the 5M material is detailed, and the 52m 522 is immediately adjacent to the layer. 524. —Including the covering plane layer 55 200533926 FIG. 21E illustrates the probe contact element 526 that is demolded from the substrate 512 and the sacrificial material 514. The probe contact element still includes a protective material 516 to coat the probe contact. Layer material 518, and the probe contact coating material 518 is maintained in this state by the probe contact structure material 520. 5 FIG. 21F illustrates a state in which the coating material 518 surrounds the probe contact structure material 5 2 0 after the protective coating 516 is removed during the manufacturing process. Figures 22A-22H are penetration and perspective views of a rough outline of the exemplary structure at a different stage of a process for forming an array of probe contacts and components according to a sixteenth embodiment of the present invention. The pin contacts are constructed using a 10-silicon mold, and are sealed between the structural material and Shi Xi before the sacrificial material is removed. These contacts are protected from the sacrifice of the sacrificial material. / Figure 22A is the initial state of the specific embodiment, and the towel is provided with a stone substrate 552 (for example, with -⑽ orientation). In these specific cases, other I5 contact types can be selected as the different substrates required. In this embodiment, the Shixi substrate is selected to have low resistance. Fig. 22B illustrates the process in which a plurality of voids have been etched in the substrate. The voids are related to the shape of a probe contact and a channel 556. In addition, worms enter Shi Xi. The use of this channel is only as a state behind its 20 554a-554j, and each of these relative positions corresponds. As shown in the figure, the formation of this channel is optional, and the contact structure will be used as the "collection". These contact forms can be based on KOH or four-base listening area (tmah). And similar non-isotropic agents are formed in the form of three traces or wedges. By using other agents such as HCN or XeF2 to achieve a spherical or semi-heterogeneous form 56 200533926. By using the special combination In the form of a triangular pyramid or a wedge, in the form of a specific embodiment, a single photomask or multiple photomasks can optionally be used to perform all openings simultaneously. The remaining work, and the etching operation is performed at different times. The 22C diagram shows the state of the process after filling the gaps 554a-554j with a required contact material mo. By a plating operation, a spray Splash operation or some other way to fill the gaps 554a-554j. Cover the channel 556 or simply make any deposited 10 contact material in the channel 556 disappear and become open as in subsequent operations. Filling operations. Filling operations for gaps 554a-554j may include A probe contact material is used, and a probe contact coating material is also used. Figure 22D is a diagram illustrating a state after the selective deposition of the structural material 562 forms a sealing cover to cover the probe contact material. It extends 15 beyond the area of the probe contact material to completely seal the contact material between the silicon substrate and the structural material. If the edge probe contact material is not deposited in a selective manner, then Before depositing the structural material as shown in Figure 22D, a planarization operation can optionally be used to ensure that the structural material can be directly combined with the silicon material. 20 After the structural material is deposited, a sacrificial material can be deposited overlying and Surface planarization leaves one of the structural materials with exposed areas covering the contact locations and sacrificial material elsewhere (not shown). Figure 22E illustrates the process where multiple probes have been constructed by an electrochemical process or a similar process. A state after the element layer, in which the last layer leaves 57 200533926 the exposed areas of the structural material corresponding to the last layer of the probe element surrounded by the sacrificial material. FIG. 22F shows a state of the process after the _adhesive or bonding material 566 overlies the areas of the structural material 562, and it is wound with or without the sacrificial material 564. The unmolded probe The element and substrate 552 are the next wafers combined with a required permanent substrate (for example, a space converter) as shown in Figure 22G. Then, the sacrificial material is removed by an etching operation, and the side of the array can be removed. The edge is processed toward the center, or the silicon substrate can optionally be ground to expose the channel area filled with the sacrificial material, and then the etching operation can be processed from the side of the array and the center area. Figure 22H is a diagram A state in which the process is after the Shixi substrate and the sacrificial material have been removed. The next specific embodiment of the present invention relates to the use of the aforementioned method for manufacturing 15 contacts, a method for manufacturing microprobe contacts, and a conversion / combination / release method for a temporary crystal. An upside-down microprobe is constructed on the circle and its end is combined with a spatially-translated population '(described in detail in US Patent Application No. 60 / 533,947). This patent application is hereby incorporated herein by reference. This embodiment is also related to a method for manufacturing probes having different heights, which allows the contacts to be manufactured using the sagging method on the contacts at different heights. When using EFAB ™ to make multi-height contact probes, the temple pin in the middle south (that is, 'not adjacent to the release bank on the temporary wafer) must be constructed with the same layer characteristics Height, the other probes of the component, the contact of 58 200533926 is located at a different height from these contacts (for example, adjacent to the release layer). The main challenge of using a mushrooming operation to make it at the middle height is that if the contact is thicker than a single layer at the height of the contact, the common situation is that unless the thickness of the layer in the area is distorted (non- Desirable) Use 5 to accommodate the contact height. This specific embodiment of the present invention is a method for manufacturing a contact of intermediate height, wherein a) the height of the contact may be greater than the height of the corresponding layer; b) the height of the corresponding layer does not need to be changed in any way to accommodate the contact point. Figures 23A-23U illustrate an exemplary process flow for making a single-height probe to make these contacts using a contouring operation. In Fig. 10 23A, a temporary wafer is shown (assuming that it is alumina coated with seed crystal and adhesive layer). Shown is a coverage area on the wafer surface that allows direct access to the end-pointing probe; this area can be created by locally etching the seed crystal and the adhesive layer. The pad 15 is not electroplated except for the edge mushrooming operation which points from this end to the "pad" area (this mushrooming operation is not shown in the drawing). In Fig. 23B, a thick layer of sacrificial material (assuming copper) has been plated, and in Fig. 23C, it is planarized to form a release layer of a desired thickness. In Fig. 23D, a thin photoresist is patterned to form an insulating structure, and the sacrificial metal covering it can be mushroom-shaped to form a contact geometry. In Fig. 23E, electroplating is continued for a controlled period of time. Mushroomize the copper 20 to cover these layers. Figure 23F illustrates a state of a process in which copper has been deposited on a wafer by physical vapor deposition (PVD) (e.g., sputtering), and therefore has a continuous metal film for plating the contacts (except In addition to this, the exposed photoresist area cannot be plated through a mushrooming operation, which requires a thick plating operation). Figure 59 200533926 Hunting by the famous insect 23F Figure also shows that the copper has been removed from the end pointing pad area (for example, engraved), so it is not electroplated. ， T ， 列 如, hunting by the electrician has applied the contact coating material (for example, baht) (if the core layer material is applied by Qing, you can use the previous step of PVD application). ^ 5 10

The top diagram illustrates the state of the process in which the pad material (for example, nickel) has been electrically charged. What is new in the recording is that these contacts can be made entirely of contact coating material without the need for lining materials. However, with regard to contact coatings, when deposited 'it is too soft (e.g., gold) or has too much residual stress (e.g.,' may be baht or rhodium), it is better to coat the material and Lining with another material. The second state is the state of the process, in which the wafer has been planarized, resulting in the final form of contacts. In Figure 23, the remaining layers of the probe (including the substrate for solder) have been made. In Figure 23K, a thick photoresist has been deposited and converted. In Figure 23L, solder electricity has been inserted into the photoresist hole, and in Figure 231V [picture, the photoresist has been stripped. In Figure 23n, solder has flowed back.

Figure 230 shows a state of the solder whose protective coating has been added to protect the builder before the cutting operation. If the tip is hard, this coating is also sufficient to minimize the stab-like portion on the top (and ultimately the bottom) surface of the die during the cutting operation. In Fig. 23p, the wafer has been cut to produce a single crystal grain with the compound probe; the thorn-like portion can be seen. In Figure 23Q, the crystal grains have been partially demolded to 7a) remove the ridges, and b) recess the copper surface under the solder surface. Completing the latter—the reasons are: 1) To eliminate the risk of solder wicking through copper and with adjacent probes 60 200533926 Shortening risk A is to separate solder from copper (underfm) and protect the solder during demolding of the steel . ;; The reason why it is embedded in a primer is that it helps to release the third part of the mold, and then finish it in a short time. + In this regard, it can be more time ^^ _ Wang Jiji; 5 10 15 The rule is not changed __ ^ needs to be limited) used to a) all the probe dimensions ^ = demoulding and fine pressing and combining; b) the alignment state of the probe to ~ 'until so far; the Indian side Stop the polymer (if the risk is minimized until combined with its compliance (in fact, if used) does not coat the probe and interfere with fine pressure and cannot properly wick). If the gap is too large, the knee will be reduced due to the reduced hair. Figure 23R shows one turn of the process and the needle on the space converter. Give help = 2. To the grain or the space converter together to align the state "to fully adhere to the oxide formation that hinders the operation to the minimum 2) the θ pair is well combined with the _ grain of the process shown in Figure 23S Since ,, 4 ,, and Chinese solder have flowed back, the crystal is taken as the sub-sword. In Figure 23T, a primer 4 compound has been wicked to fill the interdental space under the grain. -The 卿 · is a pictorial process of the process in which the grains have been completely removed from copper. During this process, the 'typically earlier patterned copper-coated resist features disappeared or were dissolved. Yes, once the photoresist is exposed, the denuclearization process can be stopped and the photoresist removal machine ㈣Ρ㈣ is used, and then the demolding operation is continued. The 24A-24CC diagram illustrates the process flow of a specific embodiment of the present invention. . In this specific embodiment, 'the photoresist pattern required to define the contact is formed at the appropriate layer through a reed-shaped operation structure 20 200533926 (it is adjacent to the last contact in any case), However, the reed-shaped deposition of sacrificial material was postponed until the layers were constructed to a sufficient height To allow for the formation of the maximum contact height. This postponement is completed by coating the photoresist with a dielectric film after the patterning operation. These optional coatings (for example, using Metal), but if the coatings are bondable, more work is needed to remove the coating 'the metal covering it must first be removed.' In another embodiment (not shown), -Perform the morphing operation incrementally (that is, usually electroplated copper on each layer (partially mushroomed) or electric ore # 1〇 other thick copper 'which can be completely mushroomed), then Planarize the shape (together with the entire layer) to the thickness of the layer (make the mushroom shape flat and wide. Repeat this action in multiple layers, and gradually build the contacts with mushroom shapes, molds, etc. This is expected Caused-a different shape of the dots made by the mushrooming process shown in the figure, but this is acceptable. In fact, for the average sentence I5, it is necessary to 'can all contacts Mine enters this layer-by-layer manufacturing process

20 Yisi M Yudi 23A-23I, but in the 24A-: = condition, not all probes are at the maximum height. There are only three of them: the contacts of the energy system are adjacent to the release layer. Figure 24j shows the manufacturing process, and some additional layers have been formed in the second step. Stop the 'shape-forming operation' to define the contacts where the photoresist pattern layer is needed. Photoresist patterning is used to form sacrificial = enough to form a structure to cover the secret point geometry. In Figure 24L, the photoresist appearance is coated with a thin paste. Guan 62 200533926 lies in light The thickness of the combination of the resist and the dielectric coating does not exceed the layer thickness of the lower layer. Otherwise, the dielectric coating (possibly with the photoresist) will be damaged due to the subsequent planarization of the layer (depending on the nature of the coating and The type of planarization operation performed is removed, and the _ part of the I coating is acceptable, as long as there are enough remaining 5 parts to prevent the plating from covering these contacts until the correct time). Figure 24M is a diagram A state of the process in which a photoresist for patterning the lower-layer has been applied and is patterned in Figure 24N. In Figure 240, 'coated copper (this is assumed by copper Patterned electricity, not probe structure material, made of probes.) It should be noted that the dielectric coating Bianyidian_10 plating (except for some side-shaping operations not shown). Figure 24P shows a state of the process, in which the photoresist has been stripped, and the clock is light in Figure 24R: Private pin-scratch material. In Figure 24S, the wafer has been planarized. The process shown in Figure 24M-24-24wen + ^ w 4S can be repeated several times to construct several layers until it is used; , μ said that Tian ’s step one step mushrooming operation to build the entire contact mold and a height of 15 is sufficient. / 'Figure 24T shows the state of the process, in which the coating has been removed, borrowed from Figure 4U The copper reed was shaped by the electric power for a controlled period of time to cover the photoluminous φ agent characteristics. At the 24th VFI Shi Yuanping 'has covered the wafer by physical vapor deposition (for example, sputtering).-20 24W In the figure, you have removed the copper from the end to the 塾 region. In Figure 24W, you have a contact coating material (for example, baht) applied by electroplating (moreover, if Applying the contact coating material by physical vapor deposition is enough to bypass the steps of applying copper by physical vapor deposition). Brother 24X Picture Transmission 1. The contact pad material (for example, nickel) has not been electroplated. In Figure 63 200533926, Figure 24Y, the wafer has been planarized, resulting in the final form of the contact. Figure 24Z shows a state of the process The remaining layers of the probe (including the substrate for solder) have been made. In Figure 24AA, the scraps have been patterned and deposited and then flowed back. Following this process, the wafer is cut. 5 10 J 于 弟 24BB In the figure, the grains have been flipped and the solder has flowed back in front of the secret agent for self-alignment and bonding with the grains, and the co-solvent has been removed. At the same time, in the 24BB picture, a primer has been wicked to polymerize The object is used to fill the space below the grain. Figure 24CC shows the state of the process, in which the crystal copper is demolded, resulting in these contacts with different heights. Although the process is directed to such probes having two different heights, this system can be used to make probe groups with three or more different heights. In the above specific embodiments, the emphasis is placed on a special sacrificial material, copper 'and structural material' 4, but in the transferable specific embodiment, other materials can be used. 15 Figure 25 A-25D is a schematic side view of an optional process at different stages for forming an undercut dielectric pattern similar to the specific embodiment of Figures 7A-7F, in which the multiple photoresist Deposits can be used in combination with multiple exposures. Figure 25A shows a state of the manufacturing process, in which a substrate 582 is coated with a 20 positive photoresist material and then given a relatively small coverage exposure. Figure 25B shows the manufacturing process in the photoresist. The first exposure coating layer is covered with a second coating layer 586 in a state after coating. Figure 25C shows the manufacturing process in which a photomask is placed above the coating 586. 64 200533926 Field application "The figure 25D shows the bottom of the coating and the H material is used to make the initial 5 10 15 20 Below this embodiment, a specific embodiment relates to a method for forming a swollen-m contact. This method utilizes-similarly molding a contact mask with a push-out side wall, in order to produce a deposition with sacrificial material (typically copper) with a push-out side: 2-a thin tube system is optional The appearance is that it is a part = =: Γ located on the wafer, so it is generally useful (ie, better than a contact mask with flat sidewalls), making the contact mask In terms of alignment, it is more like the same photomask, allowing the misalignment between the contact photomask and the wafer to be viewed from the opposite side of the camera. If it is needed to form these contacts that partially pass through the structure (ie, 'producing these probes with contacts of different heights), then a partially transparent contact mask is needed to form the contacts. This situation requires alignment with existing geometries (as opposed to most unpatterned wafer surfaces). Figures 26A-26H illustrate the process used to make a contact mask, while 26I-26MS) illustrates the use of a contact mask when forming contacts on a wafer. Figures 26A-26B show the state of the process after the contact mask substrate (usually only a thick silicon wafer) is made. It is assumed that a part of the transparent contact mask is required. In Fig. 26A, the low-resistivity (ie, heavily doped) silicon system shown is adjacent to a rigid glass plate having a diameter larger than the wafer, and has at least one hole for receiving a spring contact. In Figure 26B, the wafer and glass have been bonded (for example, 65 200533926, such as by anodic bonding) and a spring is inserted, and then the wafer and glass are electrically contacted. For alignment, look through the synthetic contact reticle substrate (around the edge of the silicon circle). Alternative methods for making contact mask substrates such as this include 'drilling through a silicon wafer to make a viewing hole and surrounding the stone with a glass ring bonded or press-fitted with it Evening wafer. Figures 26C-26E illustrate the mold used to prepare the contact mask. In Figure 26C, a silicon wafer is shown. In Figure 26D, an anisotropic etch (for example, using KOH) has been used to form a channel (for example, a triangular vertebra or an elongated triangular vertebra). If the silicon surface is a 100-crystalline silicon surface, the smooth side wall of Xin 10 is at an angle of 54.74 degrees with the surface). The mold is also sintered with vermiculite or coated with parylene to provide a non-adhesive surface for polydimethylsiloxane (PDMS). Fig. 26E shows a state of the manufacturing process, in which b PDMS has been applied to the mold. In Fig. 26F, the contact mask substrate has been lowered on the mold and pressure is applied, and then too much will be cured. PDMS extrusion. At 26G, the contact mask substrate has been demolded and reactive ion engraving has been performed () to remove any PDMS molding flash from these features, and leave bare stones. In Fig. 26H, the electrical contact with the silicon wafer of the 2 contact mask has been completed by the spring and thin nickel (not shown), and then copper has been plated on the contact mask-20 substrate. When the contact light is used below When masking, this contact mask substrate is used — as a raw material for the deposition of copper. It should be noted that although the contact mask substrate and mold are unique, the molding and electrical processes are otherwise similar to those commonly used in the manufacture of contact masks. Figure 261 illustrates a state of the process in which a contact mask and a wafer 66 200533926 (eg, nickel, titanium / gold coated aluminum oxide) have been aligned with alignment targets positioned on each other, and The two have meshed while being substantially parallel. Applying a completely controlled pressure, although this operation is acceptable in this case, too much pressure will distort the shape of the PDMS contact; too little applied pressure may cause plating under the contact Flash. Since the purpose is to construct the inverted probe on this wafer and finally demold it from the wafer, a generally thick copper release layer is deposited before the steps shown in Figure 261, so some copper plating overflows The material hardly flows out. In Fig. 26J, a contact mask (used as an anode) has been contacted and copper has been electroplated on the wafer ring 10 around the PDMS contacts. In Figure 26K, the contact mask has been disengaged, leaving behind copper deposits with channels, whose geometry is similar to PDMS and thus similar to the original silicon mold. In Fig. 26L, a contact material has been deposited (in fact, this can be two materials ... a thin film such as rhodium is supported by another thicker thin film such as nickel). In Figure 26M, the layer has been planarized to make a contact array. Here, a standard EFAB process can be performed to manufacture the probes aligned with the above-mentioned contacts. If desired, the process shown in Figures 26I-26M can be completed at a height of ~ or more further upwards (though usually having a Use 20 to pattern different contact mask patterns for the contacts shown by the highest probe). In this case, as already mentioned, carefully align the contact mask with the alignment target on the wafer. It should be noted that using this specific embodiment of the present invention, the pitch between the probe contacts cannot be extremely small, because there must be space between the PDMS contacts. 67 200533926 The distance between the wafers must typically be reasonable (for example, 50 microns or greater) or can be shortened during plating. 5 10 Another specific embodiment for producing a probe contact includes producing a photoresist mold having a sloped sidewall. This specific embodiment will be described with reference to Figs. 27a & 27B. A shading or grayscale mask (i.e., a mask having a region through which ultraviolet light passes but with lower intensity) is used in combination with a positive photoresist (e.g., AZ462). Figure 27A illustrates a standard photomask used to achieve a stepped photoresist pattern. Figure 27B illustrates the use of a gray scale mask to achieve the sloped side soil of the photoresist and lameness to achieve a sloped mold. These probe contacts can be made by inserting a suitable metal battery into the mold. a ^ A specific embodiment of the present invention relates to a method for manufacturing a probe having a probe contact. This process is shown in Section 28®. Figure 28A illustrates a substrate (e.g., alumina) (, U.S.A. ') with a thick (e.g., electric ore overlay sprayer) seed layer of sacrificial material (e.g.,' copper '). If needed, an adhesive layer can be used under the seed layer (Example 2,

Tl_w, not shown). In Figure 28β, the photoresist has been patterned and solder plated into the holes. In 箆 9sr Tongshi 1 ^ In the 28C picture, 'a removable material such as' indium' has been applied or a material which does not damage the solder when melted at a lower temperature compared to solder), and 2_ = " Xuan layer flattening. It is assumed here that this material is conductive and can be electrically charged with a sacrificial material that is acoustical. If this is not the case, then, apply a layer suitable for crystal transfer (possible and adhesive) before operation. In the view of Ang Kuang, the structured person in the sacrifice material-more, '° structure ° As should not be noted, in Figure 28f, the photoresist has been converted: Figure 20 200533926 Galvanic-relatively high deposits of material (eg, recording) suitable for use as a probe contact $. In Figure 28G, the wafer's Wei has been protected (for example, 'by quick-drying paint or street, and in the simplified figure, the electrochemical button has been executed under conditions that cause sharpening of the protruding deposited metal structure. .Sacrifice material that can be engraved with a wound probe can also be performed. If this operation is performed to an unacceptable level, the sacrificial material can be protected before the rest of the operation (for example, by patterned photoresist) In Fig. 281, the photoresist has been patterned, and the sharp contacts have been exposed. In Fig. 28J, a contact coating material (for example, germanium) has been deposited 10 over the contacts. In Fig. 28K, the photoresist has been stripped, and in Fig. 28L, sacrificial material has been deposited to cover the contacts, although this step can be removed, for example, as shown in Fig. 28M If the applied adhesive is thick enough to accommodate the contact height. In Fig. 28M, the structure 15 shown in Fig. 28L has been attached to the substrate 2 with an adhesive (this operation should be able to allow for related processing Temperature). If necessary, before this step, The planarization of the sacrificial material applied as shown in FIG. 8L is sufficient to make the adhesive layer thin. In FIG. 28N, the substrate 1 and the seed layer coating are removed (for example, by dissolving the seed layer). In Figure 280, the removable material is removed and the solder is then allowed to simmer 20 times. To minimize the heating operation of the adhesive, the removable material can be removed and / or a localized hot air flow can be used to let the solder flow In Figure 28P, the structure shown in Figure 28 has been inverted and placed in a space with pads (or other devices). In Figure 28q, the solder has flowed back. , The probe is combined with the space converter. In the 28r 69 200533926 picture, the substrate 2 has been removed (for example, Russ ("such as straw to remove the adhesive that coats it)) and the money material and space converter. Has been wicked (if necessary, for example, the anti-sighing solder does not affect the sacrificial material of the butterfly) primer (sinking in this way, is permanent). In Figure 28S, the p μ port τ has been etched The material is sacrificed, leaving a probe coupled to the co-space converter. Body embodiment, the classification made in the form of pin contacts required to use other techniques ,, he only embodiment, by may be Construction - extruded shape (i.e., generally built 101520

Probe contacts are created and then electrochemically sharpened after transfer and demolding. This operation may cause some distortion to the rest of the probe structure, but it is acceptable for some applications. If the twisting process is unacceptable, you can choose to combine the probe material, the probe contact material and the agent, so that the probe contact is etched at a faster rate than the side of the probe body. .

In the optional core, in addition to the small selection of materials, the sharpening operation can be performed to increase the anti-sharpening of the probe body material, such as' oxidation or-appropriate chemical vapor deposition (cvd). )reaction. ★ At the points and bodies of 9A-9G, 10A-10c, 23A · 23υ, and 24A 24cc, in the embodiment, a process using an electricity effect is used to connect "one of the sacrificial metals is covered by electroplating and The patterning operation is covered with a patterned photoresist layer 'to form-sacrifice the mold used to make the contacts. The coating and plating process (that is, the patterning operation) that should be considered can be performed at the expense of The side shot of the mushroom shape constitutes a small bump. This bulging condition has multiple types of capsules. Among them, the effect is # in the hole formed by the sacrificial metal. 70 200533926 When the structural material of the ship follows the sacrificial metal wall The curved contour flowed until the material reached the bottom of the hole where the initial photoresist stayed. In this area, due to the swelling of the sacrificial metal, there was a small skirting space under the bump, causing When the structural material is filled in the 5 area and demolded, it forms a π-shaped eight-shaped unfolded portion with the leading surface of the contact. This situation is shown in Figures 29A-29D. If the bulging and flaring are performed Assignments' can be used as in section 30. A-30D picture shows one of the enhanced processes. On a conductive substrate (whether it is a starting metal substrate or a dielectric substrate with a seed layer deposited), spin 10 to apply a thin photoresist and aim at The required contact shape and size are patterned with an appropriate geometry [Figure 30A]. The overlay plating operation is performed according to the manufacturing method described previously, but using a very low current density. Once this operation is completed, the There are bumps in the sidewalls of the holes made of sacrificial metal. It is assumed that the low plating current density can reduce the amount of bulging. The sample then receives 15 an auxiliary seed layer ipVD deposition (eg, TiW / Cu sputter deposition) Coat all applicable surfaces-including the space below the bumps as described above (see Figure 30A). Once this is done, cover a thin copper layer of electricity (for example, with ~ total thickness) over the seed crystals Layer [see Figure 30b]. Next, the entire sample is covered by plating on the structural material, filling the holes used for the contacts [see Figure 30C, and then overlaying and polishing the surface [see Figure 30C]. Figure 30D The contacts are thus formed and the probe body can be manufactured. This method provides a number of advantages. First, by using an auxiliary seed layer and a subsequent sacrificial material (eg, copper) plating layer, this will cause filling Note that this area leads to the flaring of the contact. Therefore, when plating structural materials, 71 200533926 does not form a sigma-shaped lip at the guide surface before the contact. The second advantage is that by adding a crystal layer and a The conductive layer covering it can first use a third material that is separated from the sacrificial and structural materials into the hole, and then fill the remaining space with the structural material. This allows these 5 contacts to be plated with a third 2. Coating of any material (for example, the rhodium film can be electroplated into the hole first, and then the rest of the hole is filled with nickel, which is a structural material, so the nickel contacts coated with rhodium are formed after demolding). Third, it should also be noted in previous experiments that, for the specific geometry of the patterned photoresist of the contact, the structural material incompletely fills the space of Xin 10 in the hole, causing a narrow gap in the middle of the contact. A gap or a gap. This may be undesirable for a number of reasons, including contaminating effluents. Finally, experience has shown that sometimes the photoresist used for the initial overlay plating operation is not always eliminated immediately after the contact release etching operation. For a while, the photoresist will stay in place, and immediately after the demoulding, it will flap on the top of the contact structure 15 undesirably. By adding a crystal layer and a sacrificial layer thereon, any direct physical connection between the contact point and the photoresist can be eliminated, so that the photoresist will immediately lose its effect on the construction after the release etching operation of the sacrificial material. The mechanical adhesion of the object is removed in the solution. 20. Master: In an optional embodiment, a polymer can be used to support the true one = standing under the bump generated by the mushroom-shaped sacrificial material (for example, copper) ❺ 2 B i The polymer is used to fill the entire pore, which can then be preferentially / principle removed, and a crystal layer can be prepared for depositing the splice. This can be done by simply pouring the polymer out of the pore and allowing surface tension. Used to hold the polymer in the area under the bump, and then curing the polymer at 72 200533926 'to complete this priority polymer removal operation. Consider that at the beginning of this operation, the polymer needs to be an extremely thin liquid. A first-optional method allows the polymer to be shaped, and then uses directional electrical engraving to remove the polymer from the surface of the mushroom-shaped sacrificial material and the bottom of the hole, but leaves it in place in the undercut area. . Two examples of this process are shown in Figures M and 32A-32B. Figure MA illustrates the formation of a sacrificial sacrificial material having a polymer-filled opening. Figure 31B illustrates the removal of the -part of the liquid polymer by pouring. Section 31C_W shows the polymer remaining in the bottom of the hole underfilling the area under the bump. (Figure 31 £) The diagram shows the seed layer-Sichuan deposits covering the entire surface structure to prepare contact material. Figure 32A shows a coating with an opening in the polymer, which allows molding after a directional electropolymerization finish operation to preferentially remove the polymer from the exposed upper surface. Figure 32B illustrates the deposition of a crystalline layer covering the entire surface structure to prepare the contact material. 15 In another optional embodiment, the etching of the hafnium copper can be performed in an attempt to reduce the size of the bumps. The extension geometry tends to be flattened during the etching operation, which is extremely useful for particularly prominent bumps. In another optional embodiment, the bumps can be minimized or eliminated by using an optional electroplating bath and plating conditions. Possible electroplating baths include, for example, acid-Cu with a different formulation than currently used, pyrogenate valleys, and eiectries baths. Additives can also be considered to more precisely adjust growth and reduce the number of bumps. It is also possible to modify the plating conditions by varying the current density to a higher or lower level, using pulsed electricity to deposit, remove, deposit materials or depositing at a continuously changing rate. In a further alternative embodiment, a different sacrificial material (e.g., some materials other than 5 copper) may be used in constituting the mushroom overgrowth operation. For example, nickel can be used. When copper, the seed layer is deposited, the copper fills the clock, and the rest of the contacts make up the nickel accurately. The copper filling operation can also be used as a method for later releasing and separating the contact material from the nickel mold. Figure 33 ^ 331 :) shows an example of this method. 10 Figure 33A illustrates the use of a metal other than steel. For example, nickel-composes a mushroom-shaped material that produces fewer bumps than copper after depositing a crystal layer covering the entire surface structure. Figure 33B illustrates the plating of a thin copper layer over the deposited seed layer. This operation will form a copper layer to cover the photoresist and fill it at any remaining edge under the bump. Figure 33C shows the start of the flattening operation without the deposition of materials. The result of the 33D® towel system® shows the flattening operation #, which constitutes a platform for the remaining construction operations. In other alternatives, a modified photoresist pattern 20 can be used to preferentially form a mushroom-shaped overgrowth. For example, a photoresist may first be used to form a 'Maya pynmid', a two-layer structure, the first of which is wider and the second is narrower. When the bulged portion reaches the second layer, the plating is stopped and the top surface of the second layer is used as the current bottom of the contact mold. Because the two-layer photoresist is matched with the shape, the cracks under the bumps 74 200533926 = Never cause red plating. Optionally, the solution is electrically cut into π: and the agent / photolithography step is used to allow the photoresist to be filled into the 5 10 15 20 === The second layer fills the bottom of the contact mold. Column Jun / Method ’will fill the photoresist polymer under the bumps: = Extensive—seed layer and build the rest of the contacts. Replace the disc with a modified graphic-cutting resistor ring. The triangle especially in the 34A-34D picture. An example of the method is shown in Figure :: Figure: The sinker crystal layer covers the entire surface structure, and-a thin :: ΓΓ covers the deposited seed layer. Figure 34c is a diagram showing the deposition; the status of the start of the L operation is shown, while in 34D1I the results of the flattening operation are shown, which constitutes a platform for carrying out professional construction operations. In an optional specific implementation In the example, with the probe contacts made of different garments described here on one or more days, solder bonding and other bonding materials are arranged on the back side (that is, away from the contact side), and then these contacts can be connected. The points are combined with any desired pre-fabricated metal markings. Figure 35 shows the conventional examples of these probe contacts, and Figure 35B shows the combination with a set of cobra probes. An example of such probe contacts. Of course, in other embodiments, the contacts can be combined with other objects, and can be combined with a smaller number of contacts or a larger number of contacts at the same time, and / Or some objects other than transferable contacts. In alternative embodiments, other techniques can be used to construct 75 200533926 into the desired probe contact form. For example, by using shade or The gray scale photomask forms an undercut photoresist. Inclined photoresist exposure. In some embodiments, the probe contacts may be made of the same material as the probe element 5 (eg, Ni or Ni-P), while in other embodiments, the pin The contacts can consist of one or more different materials (e.g., Pd, Au, Rh, or Baht), or the coating on the probe contacts can be made from Made of other materials. Some specific embodiments can use diffusion bonding or 10 similar methods to enhance the adhesion between continuous material layers. Application was made by Cohen et al. On December 31, 2003, entitled "for Method for Fabricating Tree-Dimensional Structures Including Surface Treatment of a First Material in 15 Preparation for Deposition of a Second Material Application No. 60 / 534,204 proposes different teaching content related to the use of diffusion bonding operations in electrochemical processes, which is hereby incorporated by reference in its entirety for reference. Further lectures related to microprobes and electrochemical manufacturing technology were filed in multiple U.S. patent applications filed on December 31, 2003. These documents include: (1) by Arat et al. U.S. Patent Application No. 60 / 533,933, entitled "Electrochemically Fabricated Microprobes", (2) U.S. Patent Application No. 60 / 533,947, titled Kumar et al. "Probe 76 200533926 Arrays and Method for Making"; (3) US Patent Application No. 60 / 533,948 filed by Cohen et al., Entitled "Co-producing Probes and Spaces" Electrochemical Fabrication Method for 5 Co-Fabricating Probes and Space Transformers); and (4) US Patent Application No. 60 / 533,897 filed by Cohen et al., Entitled "Constructing Multilayers Electrochemical Fabrication Process for Forming Multilayer Multimaterial Microprobe st ructures) ’’. Each of these patent document files 10 is hereby incorporated by reference in its entirety as reference material. Further lectures related to planarizing the layers and setting the thickness of the layers and similar operations are presented in the following U.S. patent applications: (1) United States of America filed by Cohen et al. On December 31, 2003 Patent Application No. 60 / 534,159 entitled "Electrochemical Fabrication Methods for Producing Multilayer Structures Including the use of Diamond Machining in the Planarization of Deposits of Material "and (2) US Patent Application No. 60 / 534,183 filed by Cohen et al. on December 31, 2003, entitled" During the Electrochemical Fabrication of Structures " Methods and Apparatus for Maintaining Parallelism of Layers and / or Archieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures ''. These patent documents 77 200533926 Only the δ case is hereby incorporated by reference in its entirety. References. Additional teaching content related to forming structures on dielectric substrates and / or forming structures in which dielectric materials are incorporated into the forming process and may be combined with the final structure are filed in multiple patent applications. These documents 5 The first file in the file is US Patent Application No. 60 / 534J84, filed on December 31, 2003, entitled "% Chemicals method combining dielectric materials and / or using a dielectric substrate" (Electrochemical Fabrication Methods Incorporating Dielectric Materials and / or Using Dielectric Substrates) ". The second file in these files is US Patent Application No. 60 / 533,932, filed on October 31, 2003. , Titled Electrochemical Manufacturing Method Using Chuanxiong Substrate

Fabrication Methods Using Dielectric Substrates ". The third file in these files is U.S. Patent Application No. 60 / 534,157, filed on December 31, 2003, entitled" Electrification with Dielectric Materials 15 Manufacturing method (Electrochemical Fabrication Methods Incorporating Dielectric Materials) ''. The fourth file in these documents is U.S. Patent Application No. 60 / 533,891, filed on December 31, 2003, entitled "Combining Dielectric Sheets and / or Seeds Partially Removed by Planarization" Methods for 20 Electrochemically Fabricating Structures Incorporating Dielectric sheets and / or Seed layers That Are Partially Removed Via Planarization ". The fifth slot of these file slots is U.S. Patent Application No. 60 / 533,895, filed on December 31, 2003, and entitled "For the production of multilayer trilayers on a porous dielectric. Electrochemical Fabrication Method for Producing Multi-layer Three-Dimensional Structures on a Porous Dielectric ". Each patent document case is hereby incorporated by reference in its entirety. 5 There are various other specific embodiments of the present invention. The specific embodiments can be based on the combination of the teaching content here and the plural teaching content incorporated herein as a reference. Some embodiments may not use any overlay deposition process, and / or may not use a planarization process. Some embodiments may include a single layer or selectively deposit a plurality of different materials on different layers. In some embodiments, a selective deposition process or an overlay deposition process may be used on some layers, rather than an electrodeposition process. Some embodiments may use nickel as a structural material, while other embodiments may use different materials. Some embodiments may use copper as a structural material, with or without a sacrificial material. Some embodiments may remove a sacrificial material, while other embodiments may not remove it. Some embodiments may use selective masking operations based on photomasks in combination with overlay deposition operations. Some specific embodiments may construct a structure on a layer-by-layer base, but depart from a precise planar stacking construction process that facilitates a process that interweaves materials between layers. These optional construction processes 20 disclose U.S. Patent Application No. 10 / 434,519, filed on May 7, 2003, entitled "Electrification via interlaced layers or via selective etching and void filling. Methods and Apparatus for Manufacturing Structures (Methods of and Apparatus for Electrochemically Fabricating Structures Via Interlaced Layers or Via Selective Etching and Filling of 79 200533926

Voids) ’’, which is hereby incorporated by reference in its entirety as reference material. As far as these teachings are concerned, it is obvious to those skilled in the art for a plurality of further specific embodiments, design alternatives, and use of the present invention. As such, the present invention is not intended to be limited to 5 specific illustrative embodiments, alternatives, and uses described above, but is limited only by the scope of patent applications filed thereafter. Brief description of the L pattern 3 Figures 1A-1C are schematic side views of a harmonic contact mask electroplating process at different stages, and Figures 1D-1G are schematic diagrams of a different type of 10-type contact mask. A schematic side view of the different stages of a harmonic contact mask plating process. Figures 2A-2F are schematic side views of an electrochemical process used to form a specific structure at different stages. The structure selectively deposits a sacrificial material and overlays a structural material. 15 Figures 3A-3C are schematic side views of different exemplary sub-assemblies, which can be used to manually perform the electrochemical manufacturing methods shown in Figures 2A-2F. Figures 4A-4I are schematic illustrations of the first layer of a structure constructed using an adhesive mask electroplating, where the overlay deposition of a second material will be between the deposition location of the first material and the first material itself The openings are covered. 20 Figures 5 A-5 J are schematic side views of the process for forming a probe element array at different stages according to a first embodiment of the present invention, in which the contact points of the pin element are formed by electroplating. The epoxy template-coated seed layer is molded from a silicon wafer that is subjected to patterned anisotropic etching. 80 200533926 Figures 6A-6E are schematic side views of the process of forming an alder needle element array at different stages according to the second embodiment of the present invention, which is similar to the first embodiment of the present invention. The difference is that the material of the probe element contacts is different from the rest of the probe element. 5 The 7A-7F® is a schematic side view of the process of forming the needle grasping element at different stages according to the third embodiment of the present invention, in which the contact of the probe element is made using an undercut Consisting of a patterned photoresist. Figures 8A-8F are schematic side views of a process for constructing a probe element at different stages according to a fourth embodiment of the present invention, wherein the contacts of the probe element are made with side walls pushed outward. A constricted portion located in a patterned photoresist. Figures 9A-9G are schematic side views of the process of forming a pin element array at different stages according to a fifth embodiment of the present invention, in which the 15-pin pin element contacts use a patterned photoresist material The patterned photoresist material is covered with a plating material made of a mushroom shape and an opening etched through. Figures 10A-10C are schematic side views of the process of forming a probe element array at different stages according to a sixth specific embodiment of the present invention. The contacts of the 20-pin pin element use a patterned photoresist. An electroplating material made of a 'shape is formed by the protruding portion of the agent material to cover the patterned photoresist material. 11A-11F are schematic partial penetration, ^ views, side views along a central cutting plane, and top views of a process for forming a probe contact array according to a seventh embodiment of the present invention at different stages Among them, 81 200533926, the probe contacts are formed by a patterned-deposition mold, and the mold forms a plurality of voids covered by the overlay deposition (one void per contact), which narrows the voids. Make it the desired shape. 12A-12E are schematic partial perspective and perspective views of a process for forming a probe contact array at different stages according to an eighth specific embodiment of the present invention, wherein the probe contact is sacrificed by a The structural material surrounded by the material or a part of the shading area of the contact material is formed, and then the structure or the contact material is etched relative to the sacrificial material to achieve the desired contact form. 10 Figures 13A-13C are schematic side views of the process for forming a probe element array according to a ninth specific embodiment of the present invention at different stages, in which the connection is left on the previous constituent parts of the element. In the exposed area of the point device, the patterned light-shielding material is arranged to cover the one contact material, and the contact material is removed in a moment to form other parts of the device, and then the probe contacts are formed. Figures 14A-14D are schematic side views of a process for constructing an embossing tool at different stages. The tool is used to construct a probe contact having all the array elements present and having a first contact form. 15A-15D are schematic side views of a process used to form an embossing tool at different stages. The tool is used to form a probe that has only a part of an existing array element and has a second contact form. Pin contacts. 16A-16M are schematic side views of a process for forming a probe element array according to a tenth embodiment of the present invention at different stages, in which an embossing tool produced according to FIGS. 14A-14D is used. Probe element 82 200533926 pieces of contact. Figure mi7L is a schematic side view of a probe element array constructed in accordance with the eleventh embodiment of the present invention. The process is at different stages. The probe element connection is continuous and the selected probe element is not formed therein. Figures 8A and 18J are schematic side views of a process for manufacturing a probe element array according to a twelfth embodiment of the present invention. The embossing tool constitutes the probe element contact, and the selected probe element and probe contact are not formed therein. 19A-Cong diagram is a schematic side view of a process for forming an array of needle elements in accordance with a thirteenth embodiment of the present invention at different stages, in which some probe elements have different heights and different contacts. Form ', and the embossing tool produced according to FIGS. 14A-14D and HMD is used to form the probe contact element. The 20A-2GE diagram is a schematic side view of a probe according to the fourteenth embodiment of the present invention. The probe process is at different stages. The probe contacts in the basin are formed with- Coating of the required contact material in the component to protect it from the sacrificial material used. 20 Figures 21A-21F are schematic side views for forming a probe S piece in accordance with the fifteenth embodiment of the present invention—the manufacturing process is at different stages, and straightening the probe contact fixture—a push-out form and -A coating of the contact material required to protect the sacrificial material used in the probe reading from the sacrificial material. The 22A · 22Η diagram is a schematic partial penetration and perspective view of the exemplary structure of the array of probe contacts and components according to the sixteenth embodiment of the present invention. Structure and seal it before the sacrificial material is removed ": between the materials and the contacts are protected from the sacrificial material _ 剂 景; Zha 1 Wang Yicheng process for manufacturing by shape Single-height probes "create scale contacts. 10 15

Figures 24A-24CC are diagrams illustrating the purple flow of a specific embodiment of the present invention, in which the photoresist pattern required to define the connection is formed by a sculpting operation at the appropriate layer, but the sacrificial material is mushroomed The sedimentary system is postponed until the ridge is constructed to a sufficient height, and the ridge is allowed to constitute the maximum contact height. Figures 25A-25D are schematic side views of an optional process at different stages for forming an undercut dielectric pattern similar to the embodiment of Figures 7A-7F. Multiple photoresist deposits are available. Used in conjunction with multiple exposures.

Figures 26A-26H illustrate the process for making a contact mask, while Figures 26I-26M illustrate the use of a contact mask when forming contacts on a wafer. Figures 27A-27B are a specific implementation of 20 examples for generating probe contacts, which include the production of a photoresist mold with inclined sidewalls. 28A-28S are specific embodiments related to a method for manufacturing a probe having a probe contact. Figures 29A-29D illustrate a process in which the contact guide surface is expanded in the shape of a horn due to the expansion of the sacrificial material. 84 200533926 Figures 30A-30D are diagrams showing an intensified process that can be used if swelling and unfolding occur. Figure 31A-32B shows an optional process to allow the polymer to be molded, and then a directional plasma etch is used to remove the polymer from the 5 surface of the sacrificial material and the bottom of the hole, but let it Remain behind the undercut area. Figures 33A-33D illustrate a method in which a copper filler can be used as a way to later release and separate the contact material from a nickel mold.

Figures 34A-34D are diagrams of a 2-layer contact structure. It can be made with 10 ohms first, and it has a wider first layer and a narrower second layer. Figures 35A-35B are diagrams showing probe contacts made of one or more different cakes, as described herein, equipped with an attachment material and used later to connect the contacts and probes. Needle sticking. [Description of Symbols of Main Components] 20 ... Auxiliary Structure 22 ... Material 22 '... Deposits 26a, 26b ... Pore 32 ... Electrochemical Manufacturing System 34, 36, 38, 40 ... Subsystem 40 ... Planarization Subsystem 42 ... linear slider 44 ... actuator 46 ... indicator

2 ... First material / auxiliary structure 4 ... Fourth material / Second deposition material 6 ... Substrate 8, 8 '... Harmonic contact mask 10 ... Insulator 10' ... Pattern Blending materials 12,12 '... Anode 14 ... Plating solution price ... Opening / electrolyte 18 ... Power supply 85 200533926 48 ... Bracket 52 ... Overlapping plate 54 ... Accuracy X platform 56 ... Accuracy Y platform 58 ... Slot 62 ... anode 64 ... electrolyte tank 66 ... plating solution 68 ... foot 72 ... frame 74 ... frame 82 ... substrate 84 ... photoresist 86 ... surface of photoresist 88 ... surface 92A-92C of the substrate or opening or Orifice 94 ... first metal 96 ... second metal 98 ... 3-dimensional structure 102 ... silicon 104 ... opening 106 ... casting material 108 ... sacrificial material 110 ... contact material 112a-112e ... Contact 116 ... bonding material 118 ... substrate 120a-120e ... probe 150 ... contact material 150a-150e ... contact element 152 ... sacrificial molding material 154 ... sacrificial material 156 ... structural material 158 ... layer 160 ... Bonding material 162 ... Surface 164 ... Probe elements 164a-164e ... Probe element 166 ... Substrate 182 ... Temporary substrate 184 ... Negative photoresist Photoresist material member 184B ... 184A ... ladder element openings 190 ... 188 ··· ··· probe radiation element 192 contacts the material 194 ... 196 ... developing solution sacrificial material

86 200533926 200 ... adhesive material 202 ... probe element 212 ... temporary substrate 214 ... positive photoresist 216 ... mask 218 ... opening 222 ... opening 224 ... side wall 226 ... probe element contact material 230 ... probe element 228 ... sacrificial material 232 ... structural material / temporary substrate / electric substrate material 234 ... bonding or bonding material / seed layer material 238 ... photomask / photoresist material 23 8a-23 8d ... photoresist Plugs 240a-240e ... Opening 242 ... Radiation 244 ... Sacrificial material 246 ... Reactive ion etching exposure 24m material / probe contact material 250a'250d ... Opening 252 ... Probe element 254 ... Structural material 256 ... · Adhesive or bonding material 262 ... Probe contact material 264a-264d ··· Gap 266 ... Probe element 302 ... Substrate 304 ... Sacrificial material 306 ... Material 306-1, 306-2 ... 312-1 ... Position 312-2 ... Wire element 314-2,314-1 ... Gap form 316-1, 316-2 ... Probe contact element 320 ... Sacrificial material 332 ... Substrate 334a-334d ... ·· probe element 336 ... sacrificial material 338 ... structural material 342a-342d ... element 344a-344d ... contact structure 3 52 ... Structural material 354 ... Sacrificial material 356 ... Substrate

87 200533926 358 ·· Probe contact material 362 ... Episode 366a-366d ... Probe element 368 ... Contact 372 ... Substrate material 374a-374e ... Gap 376 ... Molding material 378a-378e ... protruding Section 380 ... Tool 382 ... Substrate 384c, 384d ... Gap 386 ... Molding material 390 ... Tool 402 ... Substrate 404 ... Photoresist or polymer material 406A-406E ... Gap 408 ... Seed layer material / plating substrate 412 ... Probe contact material 414A414E ... Probe contact position 416 ... Structure material 418 ... Sacrificial material 420 ... Adhesive material 424 ... Permanent substrate 426 ... Probe contact material 452 ... Temporary substrate 454 ... Conductive sacrificial material 456a-456e ... Gap 458 ... Probe contact material 462 ... Structural material 464 ... Sacrificial material 466 ... Adhesive material or bonding material 468 ... Permanent substrate 470 ... Second adhesive material 472 ... Shading materials 472a, 472b, 472e ... Fruit pin structure 474a-474e ... Probe contact area 476c-476d ... Space 482 ... Can be convex Sacrificial material 484c, 484d ... hole 488 ... pad 490 ... permanent substrate 502 ... sacrificial material Sacrificial material 506 ... 504 ... 508 ... shield material floating point probe material 510 ... 512 of the substrate structural material ?????

88 200533926 514 ... sacrificial material 516 ... protective material 518 ... probe contact coating material 520 ... probe contact structure material 522 ... plane layer 524 ... layer 526 ... probe contact element 552 ··· Si substrates 554a-554j ... voids 556 ... channels 560 ... contact materials 562 ... structural materials 564 ... sacrificial materials 566 ... adhesive or bonding materials 582 ... substrates 584 ... initial coating 586 Coating 89

Claims (1)

200533926 10. Scope of patent application: 1. A method for making a contact structure, comprising: forming a contact contact having a desired form; electrochemically forming a compliant probe structure; and 5 making the contact The contact is adhered to the probe structure to form a contact structure. 2. The method according to item 1 of the patent application, wherein the contact has a shape derived at least in part from a dielectric material covered by an electrodeposition sacrificial material. 10 3. The method according to item 1 of the patent application, wherein the contact point comprises a material different from the structure of the compliant probe. 4. A method for making a contact structure, comprising: forming a contact contact having a desired form; forming a compliant probe structure with an adhesive layer of a plurality of electrodeposited materials; and connecting the contact The points are adhered to the probe structure to form a contact structure. 5. The method according to item 4 of the patent application, wherein the contact has a shape that is derived at least in part from a mushroom-shaped process of electrodeposition sacrificial material covering a dielectric material. 6. The method according to item 4 of the patent application, wherein the contact point comprises a material different from the compliant probe structure. 7. A method for making a contact structure, comprising: constructing a contact contact having a desired form; and 90 200533926 electrochemically constructing a compliant probe structure, wherein the compliant probe structure is constituted by At this contact. 8. The method according to item 7 of the patent application, wherein the contact contact has a shape that is derived at least in part from a mushroom-shaped operation of an electrodeposition sacrificial material covering a dielectric material. 9. The method according to item 7 of the patent application, wherein the contact point comprises a material different from the structure of the compliant probe. 10. A method for making a contact structure comprising: forming a contact contact having a desired form; and 10 a compliant probe structure composed of an adhesive layer of a plurality of electrodeposited materials, wherein the compliant type The probe structure is formed on the contact point. 11. The method of claim 10, wherein the contact has a shape that is at least partially derived from a dielectric material covered by a mushrooming operation of an electrodeposited sacrificial material. 15 12. The method of claim 10, wherein the contact comprises a material different from the structure of the compliant probe. 13. A method for making a contact structure, comprising: electrochemically constructing a compliant probe structure; and constructing a contact contact having a desired form, wherein the 20 points of the contact contact are formed in the compliance Structural probe. 14. The method according to item 13 of the patent application, wherein the contact has a shape derived at least in part from a dielectric material covered by a mushrooming operation of an electrodeposited sacrificial material. 15. The method according to item 13 of the patent application, wherein the contact point comprises a material having a structure different from that of the compliant probe. 16. A method for making a contact structure comprising: a compliant probe structure composed of an adhesive layer of a plurality of electrodeposited materials; and 5 forming a contact contact having a desired form, wherein the contact contact The points are formed on the compliant probe structure. Π. The method according to item 16 of the patent application, wherein the contact contact has a shape derived at least in part from a dielectric material covered by a step of forming an electrodeposited sacrificial material. 10 18. The method of claim 16 in which the contact point comprises a material different from the structure of the compliant probe.