TW200423428A - Light-emitting diodes and method of manufacturing same - Google Patents

Abstract

Disclosed provides a light-emitting diode and method of manufacturing same, comprising: provide a chip carrier, define a solid chip surface upon the carrier, form a metal adhesion layer upon the above chip surface, locate an LED chip with a plurality of epitaxial semiconductor layers upon the metal adhesion layer of the above solid chip surface, and secure the above mentioned LED chip on the solid chip surface of the chip carrier, through metal adhesion layer by performing a self-assembly process. The above mentioned LED chip was secured onto the chip carrier through a metal adhesion layer such that to achieve the heat dissipating purpose by rapidly conducting the heat flow, generated by LED, to the chip carrier though the metal adhesion layer with a high thermal conduction coefficient.

Description

200423428

V. Description of the invention (l) [Technical field to which the invention belongs] The present invention relates to a light emitting diode (LED) and a method for manufacturing the same. In particular, the present invention relates to a method for fixing a diode using a metal bonding layer. Light-emitting diodes of crystal grains and manufacturing method thereof. [Previous technology] Light Emitting Diode (LED) is a solid-state semiconductor device that uses two carriers (respectively negatively charged electrons and positively charged holes) generated in the diode body when current passes. ) Are combined with each other to release energy in the form of light. Due to its small size (multiple pieces, multiple combinations), fast response speed (can be operated in high frequency), and no pollution, the light emitting diode application field has gradually entered the high-efficiency lighting source market and is the future. Become a great potential commodity to replace traditional lighting appliances. With the continuous progress of light-emitting diode manufacturing technology and the development of new materials, especially the emergence of gallium nitride blue light diodes with wide bandgap, the light-emitting efficiency of diodes has been greatly improved. Because the current per unit area of the diode becomes larger, the light-emitting grains generate more active heat. If you do not try to improve the heat dissipation efficiency of the diode, it will cause the diode to deteriorate due to the accumulation of active heat, resulting in the diode. Luminous characteristics are unstable, lower diode brightness and lifetime. Although a light-emitting diode is called a cold light source, because the light-emitting crystals also emit part of their energy into heat during the light emission, the temperature of the central light-emitting layer can reach about four hundred degrees. In the light-emitting diode device, please refer to FIG. 1. Generally, in order to increase the heat-dissipation efficiency of the light-emitting diode 10, its crystal will be enlarged.

0691 -9377TWF (N1); AOC-〇2- 15-TW; PH0ELIP.ptd 200423428

The area of the pellet carrier 14 or the lead frame 15 is used for heat dissipation. Therefore, if the heat exchange between the light-emitting diode crystal grains 11 and the die carrier 14 is easier, the more effective heat generated by the light-emitting diode crystal grains 11 can be quickly dissipated to the diode crystal grains 1 1. Therefore, the scattered conductivity between the diode grain 11 and its grain carrier 5 has a decisive influence on the heat dissipation of the light emitting diode. For traditional light-emitting diodes, when the light-emitting diode crystals with a plurality of epitaxial semiconductor layers are made into a finished product, the light-emitting diode crystals are generally made of resin (or silver glue) because the substrate is conductive. Whether or not) is arranged on a solid crystal surface of a die carrier. After the resin (or silver glue) dries, the light-emitting diode crystals are fixed on the solid surface of the die carrier. However, because the resin (or silver glue) used as the glue j is usually a resin compound with a heat-insulating effect, its thermal conductivity is poor. If it is used as a light-emitting diode, it will be bonded to the die carrier. Medium, it is easy to form a nearly heat-insulating and sealing environment between the diode grains and the die carrier, and the accumulated-action heat of the diode grains will cause its energy gap (j unct The collapse of i) (pn junction emitting layer) will reduce the luminous efficiency and even destroy it, which will cause the light-emitting diode to no longer inject a larger current. Therefore, re-examining the diode's consolidation method to facilitate the dissipation of conduction is indeed an important issue in the development of diode technology. [Summary of the invention] + In view of this, in order to solve the above problems, the main purpose of the present invention is to provide a light emitting diode and a manufacturing method thereof, which uses a metal bonding layer to fix the light emitting diode of the diode to the die carrier. Since the metal has good thermal conductivity, the

200423428 V. Description of the invention (3)-Except for the fast diode heat transfer, which causes diode crystal grains, the conventional diode sealing method is exempted due to poor thermal conduction efficiency, which causes changes in the light emitting characteristics of the device, excessive grain temperature, and diodes. Short life and other issues. ^ In order to achieve the above-mentioned object, the light-emitting diode according to the present invention includes at least one sa grain carrier, and the crystal grain carrier has a solid crystal surface thereon; a light-emitting diode crystal, the crystal The particles have a plurality of epitaxial semiconductor layers, which generate light when a current is applied, and a metal bonding layer for fixing the light-emitting diode crystal grains on the solid crystal surface of the crystal grain carrier.

Another object of the present invention is to provide the method for manufacturing the light-emitting diode according to the present invention, the steps of which at least include providing a die carrier, and a solid crystal surface is defined thereon to form a metal bonding layer on the solid crystal surface. A light emitting diode crystal having a plurality of semiconductor layers of sa semiconductor is arranged on the metal bonding layer on the solid crystal surface, and the remaining light emitting diode crystal is consolidated by the self-consolidation step. On the solid crystal surface of the die carrier. The manufacturing method of the light-emitting diode according to the present invention can also be expressed in another way. The steps include at least providing a light-emitting diode crystal with a plurality of epitaxial semiconductor layers, and forming a metal on the bottom of the light-emitting diode crystal. The bonding layer is configured to dispose the light emitting diode crystal grains on a solid crystal surface of a crystal chip carrier, so that the metal bonding layer is in contact with one solid crystal surface of the crystal chip carrier, and the metal is bonded by a self-consolidation step. The layer fixes the above-mentioned light-emitting diode crystal grains on the solid crystal surface of the crystal grain carrier. The invention relates to another method for manufacturing a light-emitting diode, the steps of which at least include providing a die carrier, a solid crystal surface is defined thereon, and a metal bonding material is arranged as a metal bonding layer on the solid crystal surface, and a have

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200423428

On the light emitting diodes of the plurality of epitaxial semiconductor layers, the above-mentioned gold crystal grains and the crystal grain bearing seat are consolidated by a self-consolidation step, so that the crystal grain surface of the crystal grain bearing seat is fixed. And the light emitting diode is bonded to the light emitting diode, and the light emitting diode is bonded to the light emitting diode, and the present invention also relates to another method for manufacturing a light emitting diode, which includes providing a die bearing seat. A solid crystal plane is defined thereon, and the gadolinium layer is integrated on the solid crystal plane, and a second metal bonding layer is formed on the bottom of a light-emitting polar crystal grain having a plurality of telecrystalline semiconductor layers, and the crystal grains are arranged. The second metal bonding layer is brought into contact with the first metal bonding layer on the solid crystal surface of the above-mentioned die carrier, and the upper first metal and the second metal bonding layer are fixed by a self-consolidation step, so that the light is emitted. Diode: The particles are fixed on the solid crystal surface of the crystal bearing seat. The invention is characterized in that the light-emitting diode according to the present invention uses a self-consolidation step to respectively join the metal bonding layer with the die carrier, and then the light-emitting diode die is fixed on the die carrier. When the light-emitting diode is turned on by light, it can quickly guide the heat generated by the diode to the die-bearing seat through the metal bonding layer with high thermal conductivity.

In order to make the above-mentioned objects and features of the present invention more obvious and easy, the following exemplifies preferred embodiments in conjunction with the accompanying drawings, and describes them in detail as follows: [Embodiment] The present invention will be described in conjunction with the accompanying drawings. The embodiments are explained in detail as follows. The organic electro-optical excitation device of the present invention includes at least one grain support.

200423428 V. Description of the invention (5) seat, a light-emitting diode die and a metal bonding layer, and the metal bonding layer is located between the light-emitting diode die and the die-bearing seat to fix the light-emitting The diode crystal grains are on the solid crystal surface of the crystal grain bearing seat. The above-mentioned metal bonding layer may be formed in advance on the solid crystal surface of the above-mentioned die carrier (as shown in Embodiment 1), may be formed in advance on the bottom of the above-mentioned light-emitting diode die (as shown in Embodiment 2), It is formed in advance on the solid crystal surface of the above-mentioned crystal grain carrier and the bottom of the light-emitting monopolar crystal grain (as shown in Example 3), or it may be pre-configured on the solid crystal surface of the above-mentioned crystal grain carrier (as in the embodiment) (4), and then a self-consolidation step is used to fix the metal bonding layer and the part it touches, so that the light-emitting diode crystal is fixed on the solid crystal surface of the grain bearing seat. In the description of the present invention, the term " configuration " refers to placing an object on the surface of an object, without the meaning of solidification, and the term " solidified " refers to fixing one object to another. Surface to make them bonded (including electrical bonding if necessary). Example 1 «Monthly reference to Figure 2a, which shows the initial steps of this example. A metal bonding layer 24 is formed on a solid crystal surface 22 of a die carrier 25. This is used as the bonding layer 24. The material can be selected from germanium-gold alloy, lead-tin-silver alloy ^, silicon-silver alloy 'beryllium-gold alloy, tin-gold alloy, gold-germanium-nickel alloy, lead-tin alloy :, ship indium alloy, indium-tin alloy, tin-silver alloy, tin-silver Bismuth alloy, silver σ gold and indium metal. The method for bonding the metal bonding layer 24 to the die seat 25 can be a chemical vapor deposition method or a sputtering method, an electron beam evaporation method, a vapor deposition method, or a spray spray pyrolysis method. Gold $ Joint &

200423428

24. An epitaxial bonding layer 24 can be formed as required. Facilitate the light-emitting diode crystal with which the self-consolidation step comes into contact. Its melting temperature. The contact part is fixed, arc welding, and the metal is bonded to the light emitting body. The light emitting body having any step is fixed with a self-fixing particle 21, which includes a patterned diode step provided to make the crystal grain specific. Next, the temperature of the crystal grain 21 with the temperature of the metal bearing seat 25 at the bottom of the gold photodiode crystal grain 21 and the constant temperature of the crystal grain refers to a method described above in a high school, and the method provided above may be a connection method. The die 21 is welded on a specific resistance plus laser welding method in combination with the above-mentioned die temperature to make gold heat welding in a square or high mode or a gold bearing seat 25. Please refer to the solid crystal joint bearing seat placed on the upper bonding layer in the metal joint type The super-frequency welding is a fused solid crystal Figure 2b, the metal connection 24 is on the above surface 2 2. Layer 24, so that the solid crystal surface 2 2 is a bonding layer, and the layer 24 is sonic welded to it. Way to fix on the surface 2 2. Example 2 ^ 〇1 = > According to the second figure, a metal bonding layer 24 is formed on the bottom (substrate side) of the light-emitting diode crystal 21 after the epitaxial step is completed. The material used for the metal bonding layer 24 can be selected from germanium-gold alloy, lead-tin-silver alloy, silicon alloy, beryllium-gold alloy, tin-gold alloy, gold-germanium-nickel alloy, lead-tin alloy, indium-indium-tin-tin alloy, and tin Silver alloy, tin-silver-bismuth alloy, indium-silver alloy and indium metal. The metal bonding layer 24 can be formed by a sputtering method, an electron beam evaporation method, a thermal evaporation method, a chemical vapor deposition method, or a spray thermal cracking method. The formed metal bonding layer 24 may have an arbitrary pattern as required. Next, referring to FIG. 3b, the above-mentioned light-emitting diode crystal grains 21 having the metal bonding layer 24 are arranged on the solid crystal surface of a crystal grain carrier 25

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On 22, the metal bonding layer 24 and the solid crystal plane of the die carrier 25 are adjacent to each other. The metal bonding layer 24 is used to fix the above-mentioned light-emitting diode crystal grains 21 on the solid crystal surface 22 of the crystal grain carrier 25 by a self-adhesion step. The self-solidification step includes providing a specific temperature to the metal bonding layer so that the bottom of the light-emitting diode crystal grain 21 and the crystal grain bearing seat solid crystal surface 22 which are in contact therewith are fixed. The specific temperature mentioned above refers to a temperature / degree that is higher than the melting point of the metal bonding layer. The above-mentioned method of providing a specific temperature for the metal bonding layer 24 to be fixed to its contact portion may be resistance heating welding, supersonic: arc welding, laser welding, or high frequency welding; == 金 接 〇 Layer 24 is based on The eutectic bonding method or the metal fusion method is used to fix the light-emitting diode crystal grains 21 on the solid crystal surface 22 of the crystal grain bearing base 25. Embodiment 30, referring to Fig. 4a, a first metal bonding layer 24a is formed on a solid crystal surface 22 of a crystal carrier 25. The material used for the metal bonding layer can be selected from germanium-gold alloy, lead-tin-silver alloy, silicon-gold alloy, beryllium-gold alloy, tin-gold alloy, gold-germanium-nickel alloy, lead-tin alloy, lead-indium alloy, indium-tin alloy, tin The method for forming a metal bonding layer in the group consisting of a silver alloy, a tin-silver-bismuth alloy, an indium-silver alloy, and an indium metal on the crystal grain carrier 25 can be a sputtering method, an electron beam evaporation method, a thermal evaporation method, a chemical Vapor coating or spray pyrolysis. The formed metal bonding layer has a first pattern and can be any pattern as required. A second metal bonding layer 26b is formed on the bottom (substrate side) of the light-emitting diode die 21 after the epitaxial step is completed. The material used for the metal bonding layer can be selected from germanium-gold alloy, lead-tin-silver alloy, and silicon alloy

• > 11 200423428 V. Description of the invention (8) Gold, beryllium-gold alloy, tin-gold alloy, gold-germanium-nickel alloy, lead-tin alloy, lead-indium alloy, indium-tin alloy, tin-silver alloy, tin-silver-bismuth alloy, indium-silver alloy And indium metal. The metal bonding layer can be formed by a sputtering method, an electron beam evaporation method, a thermal evaporation method, a chemical vapor deposition method, or a spray pyrolysis method. The formed metal bonding layer has a second pattern, which can be a tolerable pattern as needed. The first graphics and the second graphics may or may not be mutually mapped. Please refer to the above-mentioned light-emitting diode grain 2 丨 arranged on the bonding layer, so that the above-mentioned first metal bonding layer and the light-emitting diode 4b: the second metal bonding layer adjacent to the white part. Next, please refer to the step of combining the metal oxide layer and the metal bonding layer 24 to form the light emitting diode. The self-fixing human cattle bonding layer is fixed on the solid crystal surface 22 24 of the grain bearing seat 25, and provides a specific temperature for the metal bonding layer crystal face 22 and its Π; the bottom and the grain bearing seat are solidly bonded Layer 24 is the temperature of the point of marriage. The degree of consolidation of the metal-lifting layer 24 and its contact portion enables the metal to be bonded to the light-emitting diode crystal grain 2 or the metal fusion surface 22 by the sonic welding method or the arc welding = super method. Example 4 of the solid crystal bearing seat 25 of the sun-resistant sun grain bearing seat 25. The grain bearing seat 25 is defined thereon, please refer to FIG. 5a, providing 0691-9377TW (N1); A0C-02.15 ^; pH〇ELIp. Ptd Page 11 200423428 V. Description of the invention (9) Solid crystal surface 22 'A metal material layer 26 is arranged on the solid crystal surface 22 as a metal bonding layer' The metal material layer 26 as a metal bonding layer may be in the form of a welding rod, Solder paste, pads, flakes, granules, or powders, but to simplify the diagram here, only a flat layer is used. The material used for the metal substance layer 26 can be selected from germanium-gold alloy, lead-tin-silver alloy, silicon-gold alloy, beryllium-gold alloy, tin-gold alloy, gold-germanium-nickel alloy, lead-tin alloy, lead-indium alloy, indium-tin alloy, tin Silver alloy, tin-silver alloy, indium-silver alloy and indium metal. Next, please refer to FIG. 51), arrange a light-emitting diode crystal grain 21 having a plurality of epitaxial semiconductor layers on the above-mentioned metal substance layer 26, and make the above-mentioned metal and the above-mentioned light-emitting diode in a self-consolidation step. The crystal grains 21 and the light > polar crystal grains 21 are fixed to the crystal. The self-consolidation step includes providing a special contact with the light emitting diode crystal grains 21 to be consolidated. The temperature of the specific melting point mentioned above. The above-mentioned method for providing a contact site fixation can be electric, arc welding, laser, and the metal material layer 26 is eutectic, and the light-emitting diode crystal grains 21 are as described above. The metal bonding layer fixes the light-emitting diode crystal grains, and further makes the light-emitting diode crystal material layer 26 as the metal bonding layer 24 and the crystal grain carrier 25, so that the crystal grain surface 22 of the hair grain carrier 25 is fixed. on. The predetermined temperature is predetermined for the metal material layer 26, and the degree of contact with the bottom and the crystal bearing surface of the grain bearing seat 22 is a temperature higher than that of the metal material layer 26. The specific temperature makes the metal material layer 26 and its resistance to heat welding. Sonic welding or high frequency welding. Bonded by means of bonding or metal fusion. The photodiode and its manufacturing method are fixed on the grain bearing base with gold 111 bonded to the solid crystal plane of the grain bearing base. By being

200423428 V. Description of the invention (ίο) The high thermal conductivity of the metal substance of the metal bonding layer, when the light-emitting diode is electrically charged, when the heat generated by the diode can be used, it can: Compared with Xi's technology of using resin or silver glue to fix the diode grains, the particle carrier greatly improves the heat dissipation efficiency of the diodes. Due to the poor heat conduction efficiency, the element's light-emitting characteristics and grain temperature are changed. ; Excessive problems and short diode life.

Although the present invention is disclosed as above with a preferred embodiment, it is not intended to limit the scope of the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. The protection scope of this issue shall be determined by the scope of the attached patent application.

200423428 Brief Description of Drawings Figure 1 is a sectional view showing the structure of a conventional light emitting diode. Figures 2a and 2b are flowcharts showing one preferred embodiment of a light emitting diode according to the present invention. Figures 3a and 3b are flowcharts showing another preferred embodiment of a light emitting diode according to the present invention. Figures 4a and 4b are flowcharts showing another preferred embodiment of the light emitting diode according to the present invention. Figures 5a and 5b are flowcharts showing another preferred embodiment of a light emitting diode according to the present invention. 〇 [Description of symbols] 1 〇 ~ Light-emitting diode; 11 ~ Crystal; 12 ~ Wire; 13 ~ Packaging material; 14 ~ Heat sink; 15 ~ Wire frame; 21 ~ Crystal, 22 ~ Solid crystal surface;

24 ~ metal bonding layer; U 24a ~ first metal bonding layer; 24 ~ second metal bonding layer; 2 5 ~ grain bearing seat, and 26 ~ metal substance layer.

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Claims (1)

200423428 6. Scope of patent application 1. A light-emitting diode, at least including: a grain bearing base, the grain bearing base has a solid crystal plane on one of the light-emitting diode grains, the grains have a plurality of insect crystals The semiconductor layer generates light when a current is applied; and a metal bonding layer for fixing the light-emitting diode crystal grains on the solid crystal surface of the crystal grain bearing seat. 2. The light-emitting diode according to item 1 of the scope of the patent application, wherein the metal bonding layer fixes the light-emitting diode crystal grains on the solid crystal surface of the crystal grain bearing base by eutectic bonding. 3. The light-emitting diode according to item 1 in the scope of the patent application, wherein the metal bonding layer fixes the light-emitting diode crystal grains on the solid crystal surface of the crystal grain bearing base in a metal fusion manner. 4. The light-emitting diode according to item 1 in the scope of the patent application, wherein the metal bonding layer is selected from germanium-gold alloy, lead-tin-silver alloy, silicon-gold alloy, beryllium-gold alloy, tin-gold alloy, gold-germanium-nickel alloy, Lead-tin alloy, lead-indium alloy, marriage tin alloy, tin-silver alloy, tin-silver-bismuth alloy, indium-silver alloy, and indium metal. • 5. The light-emitting diode according to item 1 of the scope of the patent application, wherein the light-emitting diode grains have a first-type electrode and a second-type electrode formed on the same side of the crystal grains, and the height is not high or low. On the surface, a first wire is used to connect the first-type electrode of the die to the die carrier to make it electrically conductive, and a second wire is used to connect the second-type electrode of the die to a Lead frame and make it electrically conductive. 200423428 6. Application patent scope 6: The light-emitting diode grains described in the patent application scope μ have a first-type electrode and an upper id ::: Take the electrode to the lead frame and make it electrically conductive. The first type 7. — A method for manufacturing a light emitting diode, at least including providing — forming a metal bonding layer on the surface of the surface, forming a metal bonding layer on the surface: the light emission of the above-mentioned solid-state telecrystalline semiconductor layer The diode crystal grains are on the metal bonding layer on the surface of the solid surface, and the above-mentioned light emission is made by a non-metal bonding layer to make the solid crystal surface. The first monolithic body is said to be fixed to the crystal bearing base of 8g $. The manufacturing method of the light-emitting diode described in item 7 of the patent scope. The above metal bonding layer is selected from germanium-gold alloy, lead-tin-silver Alloy beryllium gold alloy, tin-gold alloy, gold-germanium-nickel alloy, lead-tin-gold, lead-indium "gold, indium-tin alloy, tin-silver alloy 'tin-silver-bismuth alloy and indium metal. The indium-silver method Λ :! ϊ The range of the light-emitting diode manufacturing method described in item 7 is to provide a specific temperature to make contact with the above-mentioned metal: The solid crystal surface and the core of the particle bearing seat are manufactured by the light emitting diode as described in the 9th aspect of the patent application: 2: ": a specific temperature is provided in the combining step to make the metal bonding layer * and the contact part is fixed The method is resistance heating welding method, supersonic; welding on page 16 0691 -9377TWF (N1); A0C-02- 15-T ^; PHOELIP. Ptd 200423428 6. Application scope of patent laser welding method or high frequency welding method Connection method, arc welding method, formula 0 〇 · The manufacturing method of the light-emitting diode as described in item 7 of the scope of the patent application, wherein the metal bonding layer is a eutectic bonding method to fix the light-emitting diode grains to The solid crystal surface of the above-mentioned crystal chip bearing seat. 1, 2 · The light-emitting diode manufacturing method as described in item 7 of the scope of the patent application, wherein the metal bonding layer is a metal fusion method to fix the light-emitting diode aa The grains are on the solid crystal surface of the above-mentioned crystal grain carrier. 13. · A method for manufacturing a light-emitting diode, at least including providing a light-emitting diode crystal having a plurality of crystalline semiconductor layers, forming a metal bonding layer on the bottom of the light-emitting diode crystal, and disposing the light-emitting diode. The crystal grains are on the solid crystal surface of a crystal grain bearing base, and the metal bonding layer is brought into contact with one solid crystal surface of the crystal grain bearing base. In a self-consolidation step, the metal bonding layer makes the light emitting diode crystal grains It is fixed on the solid crystal surface of the die carrier. 14. The method of manufacturing a light-emitting diode according to item 13 of the scope of the patent application, wherein the metal bonding layer is selected from the group consisting of germanium-gold alloy, lead-tin-silver alloy, shixi gold alloy, corrugated gold alloy, tin-gold alloy, and gold-germanium Nickel alloy, tin alloy, lead indium alloy, indium tin alloy, tin silver alloy, tin silver bismuth alloy, indium silver alloy and indium metal. 15. The method for manufacturing a light-emitting diode according to item 13 of the scope of the patent application, wherein the self-consolidation step provides a specific temperature to make the bottom of the light-emitting diode crystal grains contacting the metal bonding layer and the die carrier The crystal plane is bonded to the metal bonding layer. 16. The manufacturer of the light-emitting diode as described in item 15 of the scope of patent application O691-9377TWF (Nl); AOC-02-15-TlV; PHOELIP.ptd page 17 200423428 The method includes the method of self-fixation and the contact position of the contact point, and the arc welding type. A specific method provided in the step is the resistance heating method, the temperature of the laser welding side to make the metal bonding layer and the welding method, the ultrasonic welding type or the high-frequency welding method, and 17 as described in item 13 of the scope of patent application. A method for manufacturing a light emitting diode ', wherein the metal bonding layer is used to fix the light emitting diode male particles on a solid crystal surface of the above-mentioned crystal grain carrier by eutectic bonding. 18. The method for manufacturing a light emitting diode as described in item 13 of the scope of the patent application, wherein the metal bonding layer is a metal fusion method for fixing the light emitting diode crystal grains on the solid crystal surface of the crystal grain bearing seat. . 19. A method for manufacturing a light-emitting diode, comprising at least providing a die carrier, a solid crystal surface is defined thereon, a metal substance is disposed as a metal bonding layer on the solid crystal surface, and a plurality of epitaxial semiconductors is disposed. Layer of light-emitting diode grains on the above-mentioned metal bonding layer, the metal-bonding layer and the light-emitting diode crystal and the grain bearing seat are fixed by a self-consolidation step, so that the light-emitting diode is The crystal grains are fixed on the crystal grain surface of the crystal grain bearing seat. 20 · The method for manufacturing a light emitting diode according to item 9 of the scope of the patent application, wherein the metal bonding layer is selected from the group consisting of germanium-gold alloy, lead-tin-silver alloy, silicon-gold alloy, beryllium-gold alloy, tin-gold alloy, and gold-germanium Nickel alloy, lead-tin alloy, indium alloy, indium-tin alloy, tin-silver alloy, tin-silver alloy, indium-silver alloy, and indium metal. 21. The light-emitting diode manufacturing method according to item 19 of the scope of application for a patent, wherein the self-consolidation step provides a specific temperature for bonding with the above metal 0691-9377 ™ F (Nl); AOC.〇2-15-T1IV; PHOELIP.ptd No. 18 Tribute 200423428 Six, the scope of the patent application f contacts the bottom of the light-emitting diode crystal grains, the crystal bearing surface of the grain bearing seat and the The metal bonding layer is fixed. 22.The light emitting diode manufacturer as described in item 21 of the scope of patent application, wherein the method of providing a specific temperature in the self-consolidation step to consolidate the metal bonding layer with the eight contact parts is the resistance heating welding method. , Ultrasonic welding, arc welding, laser welding or high frequency welding. 23. The method for manufacturing a light emitting diode according to item 19 in the scope of the patent application, wherein the metal bonding layer is a eutectic bonding method for fixing the light emitting diode aa particles on the solid crystal surface of the above-mentioned crystal grain bearing seat. on. 1. 24. The method for manufacturing a light emitting diode as described in item 19 of the scope of the patent application, wherein the metal bonding layer is a metal fusion method for bonding the light emitting diode crystal grains to the solid crystal surface of the crystal grain bearing seat. on. 25 · —A method for manufacturing a light-emitting diode, which at least includes providing a die-bearing base with a solid crystal surface defined thereon, forming a first metal bonding layer on the solid crystal surface, and a semiconductor having a plurality of epitaxial semiconductors. A second metal bonding layer is formed on the bottom of the light-emitting diode grains of the layer. The above-mentioned crystal grains are arranged on the solid crystal surface of the above-mentioned grain bearing base, and the second metal bonding layer is in contact with the first metal bonding layer. A self-consolidation step fixes the first metal and the second metal bonding layer to fix the light-emitting diode crystal grains to the solid crystal plane h of the crystal grain bearing seat. 26. The method for manufacturing a light-emitting diode according to item 25 of the scope of the patent application, wherein the metal bonding layer is selected from the group consisting of germanium-gold alloy, lead-tin-silver alloy, silicon-gold alloy, beryllium-gold alloy, tin-gold alloy, and gold-germanium-nickel Alloy, lead-tin 0691.9377TWF (Nl); AOC-02-15-TW; PHOELIP.ptd Page 19 200423428 VI.Applicable patent scope Gold, lead indium alloy, indium tin alloy, tin silver alloy, tin silver bismuth alloy, indium silver alloy and indium In a group of metals. 27. The method of manufacturing a light-emitting diode according to item 25 of the scope of the patent application, wherein the self-consolidation step provides a specific temperature to fix the first metal layer and the second metal bonding layer. 28. The method for manufacturing a light-emitting diode according to item 27 in the scope of the patent application, wherein the method of providing a specific temperature in the self-consolidation step to fix the metal bonding layer and its contact portion is a resistance heating welding method, an ultrasonic wave Welding method, arc welding method, laser welding method or high frequency welding method. 29. The method for manufacturing a light-emitting diode according to item 25 of the scope of the application for patent, wherein the metal bonding layer is a eutectic bonding method for fixing the light-emitting diode crystal grains on the solid crystal surface of the crystal grain bearing seat. on. 30. The method for manufacturing a light emitting diode as described in item 25 of the scope of the patent application, wherein the metal bonding layer is a metal fusion method for fixing the light emitting diode crystal grains to the solid crystal plane of the crystal grain bearing seat. on. 0691 -9377TWF (N1); A0C-02- 15-TW; PHOELIP. Ptd page 20