TW200421061A - Electronic load apparatus - Google Patents

Abstract

The present invention is provided to improve the frequency response characteristics of the load current for the tested power device of an electronic load apparatus. In the invention, impedance L1 is connected in series and attached to the source of transistor Q1 for load current control. In addition to improving the frequency response characteristic of the electronic load control loop and the electronic load transient response characteristics at the starting of the power supply to be tested, a better load current control characteristic is obtained in a wide load current range by providing a circuit device of a non-linear element between the input and output of an operational amplifier for the driving transistor of the controlling circuit.

Description

200421061 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a rechargeable battery that can be used as a direct current power source (cannot be used again after discharging), a secondary battery (can be ☆ emperor, a battery, or a long-term battery; ^ / Electronic load devices used by loads such as fields and batteries (especially 1 θ), and two types of test loads such as power supplies under test where the fuel current changes at high speeds [prior art] Electronic load devices for characteristics. Fig.-Is a structural example of the electronic load device and the tested power circuit of the conventional technology and the description of the operation principle. The tested power source 2 'f is connected to the electrical gauge 3, and is connected to the electronic load. The voltage Ein of the fixed load current IL is set to the current setting. The power amplifier is used, so the operational amplifier A1 compares the current setting. The voltage of the parallel resistor R1 is detected by the load current of the control voltage n, and the gate of the load transistor Q1 is driven by the operational amplifier Aι = two output voltages, and the load current I [eg, Formula 1 is generated. 'Melon σ common [Number 1] IL = Ein / Rl ............ •• Equation 1 When the dynamic load dynamic test of the power supply under test is performed, the control voltage for current setting will not be DC The voltage is a rectangular wave or a voltage wave-like voltage that alternately repeats a control voltage output corresponding to a load voltage value, or an arbitrary waveform with respect to the desired load current waveform of the power supply under test. When testing the characteristics of the power supply under test for the high-speed change of the load current, because the electronic load device requires a high through rate, the frequency of the load current control loop composed of the real amplifier A1 and the load transistor Q1 Characteristics, it is necessary to use a wide area as much as possible to achieve control response characteristics

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South speed 0 In order to achieve high-speed load current flow, the impedance (i mpedance) between the power source 2 under test and the electronic load device 1 and the electrical impedance 3 must be sufficiently low. Although this effect can be ignored if the connection cable 3 uses a cable with a relatively large load current, the increase in the cable impedance component due to the cable length ratio can have various adverse effects on the speeding up of control response characteristics. In the second figure, in order to perform a dynamic load dynamic test, the load current control voltage V3 can generate a rectangular wave voltage at a certain interval, which facilitates the detection of load current and the voltage output that matches the load current detected by the parallel resistor R 1 And using the operational amplifier A1, output the voltage difference from the aforementioned load current control voltage V3 to the gate of the amplified load transistor Q1, and perform a dynamic load dynamic test of the power source 2 to be tested through the connection cable 3. The test power source 2 is composed of a voltage V2 and an internal resistance R2. The equivalent impedance of the single-sided wire of the connection cable 3 is taken as L31 and L32, and the pair of cables is made into parallel or twisted wires so that the magnetic beams cross each other. When the mutual impedance is taken as m, it exists in the power supply 2 under test. The impedance component generated by the connection cable to the electronic load device 1 can be regarded as the equivalent impedance of [in Equation 2]. [Equation 2] L = L31 4 * L32-2M ............ Equation 2 The equivalent impedance L of the connection electric gauge 3, when the dynamic load current increases, it will appear as A formula 3 The relationship between the direct current rate of 7F $ 'and the voltage drop 6 connected to the telescope 3 is as shown in f in Equation 4. When the electric drop e is close to the output voltage of the direct power of the tested power source,' load transistor Q] Voltage between drain and source

200421061 V. Description of the invention (3) It will reach saturation. From the relational formula shown in formula 5, it shows almost the through rate of formula 6. [Equation 3] S = di /dt...Equation 3 [Equation 4] e = LxS = Lxdi / dt… Equation 4 [Equation 5] LX di / dt = E… Equation 5 [Equation 6] S = di / dt = E / L… Equation 6 Here, let the output voltage of the power supply under test be E, the saturation time of the drain and source voltages of load transistor Q1 be T, as shown in Equation 7, where the voltage is saturated During the time, the load current will produce a situation other than the original current value or the original current waveform. In order to prevent such effects, a convenient and convenient method is to shorten the connection cable and reduce the equivalent impedance L 'of the connection cable to achieve the purpose. High load current waveform of shoot-through rate. [Equation 7] T = L x E / I ... Equation 7. From the point of view, in the application of the static load of the power supply to be tested and the current waveform of the transition, let's try to see the connection ^ = rapid increase in negative load At this time, the aforementioned ΐ; T occurs for a short time, and then it will steadily fall to a certain set problem. Operation 1, there will be voltage saturation time in time, most of the time there will not be any P ’: ^ But, the electron of the conventional technology f 1 7

200421061

: Difficult: Stop over-current (. Ver cut) that exceeds the set current value. It is necessary to adopt an appropriate device such as a straight-through load setting that moderates the range where the voltage saturation phenomenon does not occur. One of the problems with% # 2 是 is that the equivalent impedance L of the connection cable has a great influence on the characteristics of the electronic 2 control loop. If the frequency range of the industrial circuit is widened in pursuit of high-speed response, as the impedance L of the connecting cable increases, the amplitude margin and phase margin of the circuit characteristics will decrease, resulting in over-current characteristics (over shunt), causing the electronic load to continue. The problem of oscillation. In order to make the impedance of the electrical connection to a certain extent increase, the head technology does not oscillate, it will use the operational amplifier of the second figure ^ through the frequency filter device of capacitor C10 and resistor R10 to reduce the frequency region, and Significantly sacrifice response speed. Therefore, the electronic load with high-speed response is a great obstacle. The following describes another characteristic required by the electronic load. Considering that during the power-on test of the power supply under test, for electronic loads, most of the time when the power of the power supply under test is turned off, the load current value or load impedance value after startup is preset. At this time, the electronic load can set the load current even when the output voltage of the power supply under test is not applied. Therefore, the load transistor Q1 will be at the maximum gate voltage that should flow the load current. In this state, when the power of the power supply under test is turned on, a short-circuit current that greatly exceeds the transient load current may occur. This will vary depending on the response speed of the load setting control loop of the electronic load and the start-up time of the output voltage of the tested power supply. However, the conventional electronic load and the tested power supply in conventional technology will be a big problem, that is, Detected negative

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When the load terminal voltage is below a certain threshold value, the gate drive of the load transistor, which is invisible when the power of the test power supply is turned off, is blocked or reduced, and A device that activates a load current control circuit when the threshold voltage is exceeded. Adding this circuit will cause delays in the start time of the power supply under test, and obstacles such as load current that are often interrupted below the threshold voltage. Refer to Patent Documents 丨 and Patent Documents 2, etc .: [Patent Document 1] JP 06- 1 1 3450 (items 4-9, first drawing) [Patent Document 2] JP 2 0 0 1-1 3 4 3 2 6 (items 11 to 14, item 2) [Summary] Technical problem to be solved by the present invention The present invention is to provide an electronic load device with sharp load current fluctuation and wide-range frequency response characteristics. The circuit method and device can solve the problems of the conventional electronic load device as described above, reduce the response characteristics of the control circuit characteristics of the electronic load device when the load current fluctuates sharply, and the impedance & Ring

Solve the over-shunt problem that delays the recovery time from the voltage saturation state. Technical means for solving the problems of the present invention The present invention relates to a method for operating as a load of the power source 2 to be tested.

200421061 V. Description of the invention (6) Transistor Q1, the electric circuit of the circuit produced by the plate g = and the current of the set value of the cardiac current flows into the control source of the transistor to form n and f, and the impedance U is inserted into the load in series. The control circuit is formed by the transistor; 2 ;: The non-linear element of the diode is inserted into the feedback circuit of the operation amplifier of the J circuit. The effect of the present invention is as described above in comparison with the effect of the prior art. The electronic load device and the phase load device of the power generation technology have the same effect as the conventional technical characteristics, and the load current response in the 7 K a rate area is the same. The characteristics of the household catapult test power supply when connected to the parasitic impedance of the power supply 42. The power load's severe load dynamic test and startup test, the electronic negative electronic load device of the present invention is difficult to perform response characteristic tests. To implement such a high-speed load [Embodiment] The following is a description of the embodiment of the present invention with reference to the chart to avoid the description of the embodiment of the present application = the case of a heterogeneous load transistor, "Missing 2 :: Only With regard to 1 glycoside, go to "a 1". Yita Ran can connect the circuit containing the load current control loop in parallel with a plurality of blocks (blQek) in accordance with the magnitude of the required iimL load power. One embodiment of the negative electron range described in the first item, the voltage difference output of the voltage V3 of the conventional technology is transmitted through the resistor R10 and the bias control 200421061 V. Description of the invention (7) " ----- (Of f set ») The adjustment voltage V4 is combined with the voltage output through the resistor R4 and connected to = one-sided input of the amplifier A1. The load current-matching voltage output of the shunt resistor 1 for load current detection will pass through the resistor R3 After the balancing resistor Ri 1 and the capacitor cio are shunted, they are connected to the single-sided input of the operational amplifier A1 to form a negative feedback control loop. The voltage output of the operational amplifier A1 drives the transistor Q1 to connect the cable 3 2 is connected to an electronic test power load test. ^ The circuit of a conventional electronic load device as shown in the third figure is used to simulate its characteristics. Generally, cl0 is inserted into the feedback circuit of the operational amplifier to evaluate the frequency characteristics. Because it is difficult to achieve the original high-speed X response, there are many cases where the operational amplifier does not use such a wide area. For comparison of characteristics, Here, simulation is performed with the same wide-area operational amplifier of the present invention. ° One of the embodiments described in item 1 of the patent application scope of the present invention is shown in the fourth figure, but the impedance L1 is connected in series to the source of the field effect transistor Q1. In order to take advantage of the characteristics of the present invention, an operational amplifier with a wider frequency range and a higher pass-through rate of output voltage than the field effect transistor Q1's admittance is used to connect the cable to the output voltage of the power supply under test or The load current setting and the like are also simulated and compared under the same conditions. The frequency characteristics and feedback loop characteristics of each part of the conventional technique of the circuit diagram in the third diagram are shown in the fifth diagram. The setting conditions are that the output voltage V2 of the power supply under test is set to 5 [V], the load current is set to about 5 [A], and the impedances of the single-sided wires of the connection cable 3 are set to U / zIU'lOEvH], 100 [// Η], when the coupling coefficient K3 = 0 · 9.

200421061 V. Description of the invention (8) The fifth D diagram and the fifth E diagram show the negative return ^ The fifth D diagram is the amplitude characteristic and the fifth characteristic, of which the impedance U3 is L32 and the amplitude is reduced. Under the frequency characteristics of the connecting cable, it is expected that there will be a very high frequency. Yu, in terms of the frequency characteristics of each part of the latch-back, the frequency characteristics of the drain voltage of the input field effect voltage, such as the impedance L31, L32 of the gate mirror 3 of the body Ba, the frequency will be on the / B, no, By connecting the electric voltage ^ I only rises at the same time, and at the same time proportionally 捭, the impedance and field-effect transistor Q1 have a high ζ rate between the source and the capacitor. At the frequency where the voltage increase becomes high, Hui: Hui = profit will also be greatly affected as in the fifth D diagram.

Continuous vibration. In order to avoid this phenomenon, at a frequency lower than the resonance frequency of L31 and L32 connected to; in order to make the loop gain at 0dB to I, the feedback power gC10 will be increased. The frequency characteristics below the output voltage of the operational amplifier A1 of the voltage, as shown in the fifth a diagram, fall within the frequency region. In addition, the capacitors ⑵ ^ and R3 of the third and fourth diagrams increase the stability of the feedback circuit in order to reduce the impedance of the connection cable and the resonance phenomenon of the parasitic capacity between the drain and source of the field effect transistor ... The impedance will not affect the range of the load current waveform. The f circuit of one embodiment of the first item of the patent application scope shown in the fourth figure is also simulated, and the result is shown in the sixth figure. The frequency characteristics of the voltage increase amplitude of each part, as the voltage across the input shunt resistors (R 1 and R 2), the operational amplifier A1 outputs the frequency characteristics of the voltage increase amplitude below, as shown in Figure 6A, relative to the operation Amplifier A1 has almost no feedback increase

Page 12 200421061 V. Description of the invention (9) Degree, which is in a wide area. The pole voltage and pole are determined by impedance, but there will be no acute sign in the current domain with this impedance. Although the overall characteristics of the gain and frequency current control loop are inserted, they have sufficient values to achieve a wide area. At this time, for the characteristic ', the impedance L 2 may be applied only in some cases. And a very high increase. The increase in voltage under the gate of the input field effect transistor Q1 will be regarded as the equivalent of connecting cable 3 to insert the impedance L1 into the source of the field effect transistor Q1. The feedback will be as shown in Figure 6B, in the middle The peak in the frequency region of the frequency band has an almost flat frequency characteristic. The value of the impedance L1 of the source of the special field effect transistor Q1 is different. This characteristic will vary, but as shown in the sixth D diagram, the loop gain of the load current And the gain margin and phase margin of the loop phase as shown in the sixth E diagram, and the most appropriate range can be selected. Tian The frequency of the wheel-out voltage of the shunt resistor R 1 of the load current compensates the frequency of the circuit characteristic of a tour circuit and inserts the impedance L2. The inherent impedance of the shunt resistor is sufficient. The frequency characteristics of the shunt resistor m and the impedance L2 are not needed at 1 hour. Let the time constant be τ [Equation 8] r 1 = L2 / R1 ... Equation 8

For Equation 8, consider the operating frequency as "[Equation 9] X R1) ···································································································· 2 L2 / (2 Redundant Equation 9 shows that frequency is used as a boundary, amplitude characteristics, and phase compensation with phase stability of up to 90 ° is effective for frequency compensation.

200421061 V. Description of the Invention (ίο) At this time, 'Of course', in addition to the frequency of the load detected by the shunt resistor R1 and the impedance L2, there are differentiating elements, and it will also produce the disadvantage of a waveform different from the load current. That is, the rate characteristic of the feedback circuit of the current control feedback loop becomes uneven. The method to prevent this phenomenon is to insert a resistor R1 in the other element of the feedback circuit in parallel, and insert a capacitor C11 0 which is the same as the previous time and Γ 1 in parallel, and can input the load current from the load current setting input to the load current. The frequency characteristics so far remain flat and reach a load current waveform equivalent to the current output waveform of the load current σ and the fixed voltage V3. In the second and fourth figures, the resistor! ^ 11 is inserted in parallel with the capacitor cn〇 in order to improve it. The frequency characteristic of the frequency higher than the frequency determined by the Hai time #number τ i is sufficiently high, and a predetermined value of the resistance R11 0 which is sufficiently smaller than the resistance 1 ^ 1 0 is selected. In addition, in order to operate as a differential input signal, the resistor R11 and the capacitor C111 are inserted with constants equivalent to the resistance β 1 0 of the disk capacitor C110. In addition, the following will contribute to the effectiveness of the feedback circuit's stability. 0 = Ming. The frequency characteristics of the drain current of the closed-pole input voltage of the field effect transistor as a load crystal, the characteristics of the admittance yfs, and the power factor of the M0SFET transistor will be jealous.) Considering the source capacitance of the electrostatic capacitance parasitic inside the field effect transistor, in addition to the non-polar current determined by the characteristics of the admittance yfs, the gate current of the capacity between the free source and the source is also related to the source. Extremely overlapping.

= The method of faithfully detecting the load current other than the gate current is shown in the eighth figure. Although the shunt resistor will be positively magnetized, that is, the H load current, the forward admittance will follow the frequency =: the negative pole current.

Page 14 200421061 V. Description of the invention (I ”------ η On the other hand, with the circuit of the present invention as shown in the seventh figure, because not only the load current can be detected, but also the one containing the idler current can be detected. Negative = No, so the phase delay at high frequencies can be suppressed to a minimum, which has a good effect on the stability of the loop characteristics. At this time, 'there is a disadvantage of not being able to detect the actual load current', but because it is lower than the load current The required frequency range is very high, and its gate current value is very low compared to the load current, so the effect is extremely low, but it has a very effective effect on the stability of high-frequency oscillations. The characteristics of the known technology and the present invention have been described in comparison. As explained above, in view of the frequency at which the loop gain is 丨, the present invention can almost achieve a wide area of 100 times. For the change in impedance of the connection cable, the amplitude is marginal. It is better than phase margin. Secondly, the conventional technology and the present invention are compared with respect to the characteristics of the time domain by simulation. ^ For the response characteristic of the load current, the circuit diagram of the conventional technology is shown in Figure 3. As shown in the figure, the circuit diagram of the present invention is shown in the fourth figure. The setting conditions are to set the output voltage V2 of the power supply to be tested to 5 [V], and the waveform start time of the load current setting signal V3 to be 1 [// S], The load current is set to 0 ~ 5 [Α], the impedance of the single-sided line of connection cable 3 is L31, L32, and the single-sided line is set to 1 [// Η], 1〇 [# Η], 100 [" Η], coupling coefficient Κ3 = 0.9, the load-current waveform is obtained by simulation. The ninth figure is a conventional technique, the tenth figure is the result of the present invention, and the ninth A and tenth A are the waveforms of the load current setting signal V3; Figures 9B and 10B are the voltages between the drain and source of the field effect transistor Q1;

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V. Description of the invention (12) Figure 10C is the load current waveform. Under the conventional technology, even if the impedance of the connection cable 3 is small, since the drain-source voltage is not saturated, the frequency range of the control system is insufficient, so the startup time will be slowed down; and when the impedance of the connection cable 3 becomes large, the Saturation to recovery process will produce an overcurrent condition where the set current greatly exceeds. Secondly, regarding the response characteristics of the tested power supply during the start-up test, the circuit diagram of the conventional technology is illustrated in Fig. 11 and the circuit diagram of the present invention is illustrated in Fig. 12. Both set the load current set voltage v 1 to the load current β 5 [A] in advance, simulating the output voltage waveform from the start of the tested power supply to the fixed output voltage startup, and replacing it with a table wave generator to set the startup. When the time is 1 [// S], the output voltage is 5 [V]. The impedance of the single-sided line connected to the power and cable 3 is L31 and L32. Set the single-sided line to U "Η", 1〇 ['v Η] , 100 [// H], surface area coefficient κ3 = 0 · 9, the load current wave is calculated by simulation. The thirteenth graph is a conventional technique, and the fourteenth graph is the result of the present invention. Α graph, fourteenth Figure A is the output voltage waveform corresponding to the power supply 2 under test; Figures 13B ® and 14B are the load currents. In the conventional technology, because the load current that is set before the power supply under test starts to flow, Effect, the crystal will be driven to the maximum with the gate voltage, so that the power supply under test will start, so once the load current flows, even the current, the material of the control circuit is used as the feedback of the frequency of the control system and the amplifier The capacitance of the circuit cl0, the result will be: Through rate becomes extremely slow, back to the time set current value: a long play will be held because the frequency compensation circuit operation will be dependent manner, so that the transport

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: Dynamic regionalization cannot be resolved. This is the second power source to be tested! Second: "The sub load is very fatal, and the expedient countermeasure is that the load current must block the circuit as its shortcoming. Load current waveform diagram, can be two = the size of the impedance of the power mirror 3, the load electricity / gas overcurrent will rarely occur.

, ㈣, ϊϋ are the impedance U connected to the source of the load transistor Q1, 11 = 连接, connected to the load current detection shunt resistor κι, Figure 16 shoulder generation, current detection shunt resistor R1 is connected to the load The source of the transistor Qi =, the shunt resistor for detecting the load current is connected to the impedance L1, and the hair = 疋 is at the two ends of the shunt resistor R 丨, and the load current is differentially detected to perform the f1 'so' Connecting the source of the load transistor Q1 in the order of the impedance L1 and the shunt resistor r 1 does not impair the effect of the present invention. Next, the principle of an embodiment of the present invention described in item 2 of the scope of the patent application is shown in Figs. 17 and 18. By inserting non-linear components such as diodes from the output of the operational amplifier to the input terminal, the load current of the electronic load device can be from very small to very large current, and it has a fast response and stable operation over a wide range. The drawings and simulation results are described in more detail below. In the seventeenth and eighteenth figures, one operation is performed.

The amplifier represents the increase part of the load current control circuit, but a negative number of appropriate operational amplifiers can also be used. In the operational amplifier that drives the final stage of the field effect transistor of the load control transistor, a non-linear The component is inserted into the negative feedback circuit, and the increase can be changed corresponding to the gate voltage of the field effect transistor.

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200421061

Specific examples of the non-linear element are shown in FIGS. 19 and 20. The figure 19 shows the case of a 2-terminal non-linear component. It consists of 1 or even n diodes D (l) ~ D (n) 'or resistor RD1 and one or even n diodes ~ DU). 'As shown in Figures 19C and 19D, the structure of a Zener diode ZD (l) can also be incorporated. The twentieth figure is the case of non-linear components of real wheat 3 terminals. The twentieth figure A is an example of the structure of the diode nanodiode ZD (1) and the resistor RD13. The twentieth figure b is the additional resistor RD11 and Example of the configuration of the resistor RD12; FIG. 20C is an example of the configuration of one of the poles DJ 1 on the BJ1 side of the connection point, and n or two of the junctions of the BJ 2 side of the connection point j) j 2 or even m; The twentieth D chart is a configuration example in which the resistor RD11 and the resistor RD12 are added in the constitution example of the twentieth c, but the effects are the same. In addition to diodes, capacitors for frequency compensation can also be used in combination. In order to optimize non-linear characteristics, a combination of resistance and bias can also be used. In addition, 'this embodiment is described using an N-channel transistor, but when using a P-channel transistor, if you change the connection polarity of the non-linear elements shown in Figure 19 and Figure 20, of course, The same effect can be obtained. The twenty-first figure is an embodiment of the present invention. Regarding the frequency characteristics of each part of the circuit diagram and the entire load control circuit, the load current is from 10 [mA] to "10 [A]. The characteristics are shown in Figure 22. Regarding the characteristics of the field-effect transistor Q1 for load control, due to the drain current, that is, the load current, the forward admittance yf S also changes. In particular, the drain current is set For a very small time, the gate voltage will approach the pinch voltage and the forward admittance yfs will become extremely small.

200421061 V. Description of the invention (15) Figure 22C shows the polar current characteristics relative to the gate voltage of the field effect transistor Q1. For the change of the load current, at a low frequency, p "is about 50 [dB ], The frequency range will also change. With the conventional technique of = feedback loop, even if the frequency compensation is performed to make the entire range of load current stable, but two: ff η *: Negative feedback is significantly less & 'Load current will be very different from the value shown in the previous section> even the characteristics will be reduced. Η Thousands dagger A and the response With the present invention, it can benefit # 组合 的 元 #, to compensate for the negative return of the field effect transistor Q1: The figure is a calculation of inserting a non-linear characteristic element into the middle section :: In the case of a load current from 10 [mA] to The frequency characteristics of the 10 linearly amplified section can be increased by a non-40 [dB] in the low-domain frequency τ, which can compensate for the field effect electro-crystallization, and insert the capacitor C11 into the non-linear line to improve the field quality. Degree of compensation field effect transistor / frequency region circuit, also \ certain, figure 22F The phase shown in the figure is the tenth;; = the amplitude of the shown shows a sufficient negative feedback amount and the addition of the frequency region can determine the amplitude margin and phase margin. Bu can also ensure the feedback loop.

200421061 Brief description of the drawings [Simplified description of the drawings] The first circle is a circuit configuration diagram of the electronic load device of the conventional technology. The second figure is a circuit diagram of the conventional technology in consideration of the influence of the connection cable. Figure. The fourth diagram is the circuit structure described in item 1 of the patent application scope of the present invention. The fifth and fifth diagrams A through E are the characteristic diagrams of the circuit structure of the third diagram. Figures 6A to 6E are characteristic diagrams of the circuit structure of the fourth circle. == Explanation diagram of gate current measurement as described in item 1 of the patent application scope. Figure 8 shows an example of a method for measuring the gate current. Figures 9A to 9C are response characteristic diagrams of conventional techniques. ί = is a response characteristic diagram of the embodiment described in item 1 of the scope of patent application of the present invention. Circuit diagram of start-up characteristics of technology. The twelfth figure is a circuit configuration diagram considering the startup characteristics of the embodiment described in item i of the patent application scope of the present invention. ° Through Figures 13A ~ 13B. 4 钍 m + π Α 圃 m + D @ 糸 I Know the technology startup characteristics. Figures 14A to 14B are startup characteristic diagrams of an embodiment of the present invention. The 15th figure of Yueyangwei No. 1 Institute is the circuit structure diagram of the invention patent application 笳. An embodiment described in the item The sixteenth figure is a k diagram of a circuit of a patent application of the present invention. An example recorded in the Fujian Z item

Page 20 200421061 Block diagram of the circuit structure for simple illustration. The eighteenth figure is a block diagram of the circuit structure in the second application scope of the present invention. The recorded ~ 訾 # Figures 19A to 19D are examples of non-linear elements of the patent of the present invention. Fig. 20A to XXD are examples of the non-linear element in the second application scope of the present invention. . The twenty-first figure already contained is an example of a circuit structure described in item 2 of the scope of patent application of the present invention. Figures 22A through 22F are characteristic diagrams of the circuit structure described in Figure 21. Explanation of each component symbol of the diagram: amplifier transistor resistance resistance capacitance impedance 1 electronic load device 2 tested power source 3 connection cable V1-V10 A1-A10 Q1 R1-R213 RD1-RD13 C10 ~ C101 U ~ L32 M mutual connection cable impedance

Page 21 200421061 Brief description of the drawings K3 Dl, D (l) ~ D (n) ZD1, ZD (1) B1 B2 BJ BU BJ3

XI Coupling coefficient of connecting cable Diode Zener Diode Load current detection device Non-linear additional device Connection point of non-linear additional device Switching device

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Claims (1)

200421061 June 1 ·, patent application scope-An electronic load device having a control circuit, a shunt resistor for #load current detection is connected in series to a load current control transistor driven as a load that is sensed by a negative source The second test of AC power is humiliated, and yf / the circuit that makes the output current of the tested AC power source flow, so that the gate drive current of the set value of the specific load current in the power ^ 5 is in accordance with 2.-Electric warehouse Christine , The item 1 is described in the following paragraphs, which is characterized by the output and input voltages of the four operational amplifiers for the linearity of the load transistor in the current control circuit of the gate drive sub-load device constituting the scope of the patent application. Use non- < circuit devices.