TW200417965A - Method and apparatus for forming uniform image of active organic light-emitting diode display - Google Patents
Method and apparatus for forming uniform image of active organic light-emitting diode display Download PDFInfo
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200417965200417965
五、發明說明(1) 【發明所屬之技術領域】 本發明係有關一種主動式有機發光二極體顯示器$ 均勻之方法及裝置,尤指一種藉由降低驅動薄膜電二= DriWng TFT)之Vsd (源極、汲極電壓差)及保持 (源極、閘極電壓差),以使各驅動薄膜電晶體(^ i v ing TFT )之輸出電流不致變異過大。 【先前技術】V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method and device for uniformity of an active organic light-emitting diode display, especially a Vsd by reducing the driving of the thin film electrode (DriWng TFT) (Source, drain voltage difference) and hold (source, gate voltage difference) so that the output current of each driving thin-film transistor (^ iving TFT) does not vary too much. [Prior art]
已知,薄膜晶體管液晶顯示器(TFT [CD )目前技術 分為非晶石夕薄膜晶體管(a—Si TFT)與多晶矽薄膜晶體管 (Poly-Si TFT)二種,一般所稱的薄膜晶體管液晶顯示器 (TFT LCD )是指非晶矽薄膜晶體管(j — Si TFT ),目前 技術成熟,為液晶顯示器(LCD )的主流產品。而低溫多1 晶矽薄膜晶體管(LTPS TFT)與非晶矽薄膜晶體管(a_Si TFT)最大的差異在於低溫多晶矽(LTps )的電晶體需進一 步接文雷射回火的製程步驟,將非晶矽薄膜晶體管(“ 士 TFT)的溥膜轉變為多晶矽薄膜層,使得低溫多晶矽(It is known that the current technology of thin film transistor liquid crystal display (TFT [CD) is divided into two types: amorphous silicon thin film transistor (a-Si TFT) and polycrystalline silicon thin film transistor (Poly-Si TFT). TFT LCD) refers to amorphous silicon thin film transistor (j-Si TFT). At present, the technology is mature and it is the mainstream product of liquid crystal display (LCD). The biggest difference between low-temperature polycrystalline silicon thin-film transistors (LTPS TFT) and amorphous silicon thin-film transistors (a_Si TFT) is that the transistors of low-temperature polycrystalline silicon (LTps) need to be further connected to the process of laser-tempering to convert the amorphous silicon. The thin film of the thin film transistor ("TFT") is transformed into a polycrystalline silicon thin film layer, making low temperature polycrystalline silicon (
)在石夕晶結構上較非晶矽薄膜晶體管(α _Si TFT)來的排 列f序’因此可以提高電子傳導速率達到2〇〇cm2/v —sec。 低溫多晶石夕(LTPS )技術可使元件做得更小,使整體TFT 元件面積縮小50%以上;並提昇開口率(aperture ratl〇 )’相較於a -Si TFT LCD在相同尺寸下可以製造出更高的 ,析度,且降低功率之消耗。此外,低溫多晶矽薄膜晶體 官(LTPS TFT )尚具備省電、亮度高、晝面精細、輕薄及 接點少(小於2〇〇個接點,有助良率提升,a —Si TFT需大 200417965 五、發明說明(2) -一 於3 8 4 2個接點)等優點。 然而’由於低溫多晶矽(LTps )製程所製造之薄滕電 晶,須經一雷射回火的過程,往往造成薄膜電晶體之起始 電壓(Threshold Voltage)及漂移率(Mobility)會有 所變異’使得每一個薄膜電晶體(TFT )元件的特性會有 所不同所以’當驅動系統使用類比(a n a 1 〇 g )調變方式 以表現灰階時,常因為薄膜電晶體(TFT )在接受雷射回 火的製程步驟後有不同特性,即使寫入相同之電塵訊號, 但不同畫素之有機發光二極體卻產生不同之電流,而發出 不同大=之亮度。此現象會使有機發光二極體面板顯示出〇 灰階錯誤之影像,嚴重破壞影像均勻性(Image Uni i ty ) 〇 一又美國專利US5684365之厂有機電致發光元件之薄膜 顯示器」,其提出一種由兩個薄膜電晶體及一個電容所組 f之晝素電路,當此畫素裝置在掃描影像資料時,該開關 單元呈現導通狀態,此時影像資料由資料線進入於開關單 凡裡,經掃描線掃描後,而存於儲存單元内(亦是開關單 兀導通,對儲存單元充電),儲存單元之電壓差會提供作 為驅動單元之Vsg (源極、閘極電壓差),使該驅動單元 輸出電流至有機電激發光元件,而有機電激發光元件所發謂> 出的壳度會正比於流經該元件的電流大小。然而,此種晝 素裝置若驅動單元的元件特性因製程限制而出現變異時, 便會造成有機電激發光元件發光不均句,而破壞影像均句) Compared with the amorphous silicon thin film transistor (α_Si TFT) on the Shi Xijing structure, the f-sequence 'can increase the electron conduction rate to 200 cm2 / v-sec. Low temperature polycrystalline stone (LTPS) technology can make the device smaller, reduce the overall TFT element area by more than 50%; and improve the aperture ratio (aperture ratl0) 'Compared with a-Si TFT LCD at the same size can Produces higher resolution with reduced power consumption. In addition, the low-temperature polycrystalline silicon thin film crystal officer (LTPS TFT) still has power saving, high brightness, fine daylight, thin and light and few contacts (less than 200 contacts, which helps to improve the yield. A-Si TFT needs to be larger 200417965 V. Description of the invention (2)-One (3, 8, 4, 2 contacts) and other advantages. However, because of the low-temperature polycrystalline silicon (LTps) manufacturing process, thin film transistors need to undergo a laser tempering process, which often causes the thin film transistor's threshold voltage (Threshold Voltage) and drift rate (Mobility) to vary. 'Make the characteristics of each thin-film transistor (TFT) element different, so' When the drive system uses analog (ana 10g) modulation to represent grayscale, often because thin-film transistor (TFT) is receiving lightning There are different characteristics after the process of shooting and tempering. Even if the same dust signal is written, the organic light-emitting diodes of different pixels generate different currents and emit different brightness. This phenomenon will cause the organic light-emitting diode panel to display a grayscale error image, which will seriously damage the image uniformity. Image thin film display of the organic electroluminescence element of the US patent US5684365. A daylight circuit composed of two thin film transistors and a capacitor f. When this pixel device is scanning image data, the switch unit is turned on. At this time, the image data is entered into the switch by the data line After being scanned by the scanning line, and stored in the storage unit (also the switch unit is turned on to charge the storage unit), the voltage difference of the storage unit will provide Vsg (source and gate voltage difference) as the drive unit, so that The driving unit outputs a current to the organic electro-optical light-emitting element, and the shell degree of the organic electro-light-emitting element is proportional to the magnitude of the current flowing through the element. However, if the characteristics of the driving unit of such a daylight device vary due to process limitations, it will cause uneven emission of organic electroluminescent light elements and destroy the uniformity of the image.
第6頁 200417965 五、發明說明(3)Page 6 200417965 V. Description of the invention (3)
:以’為改善顯示器影像均勾 展出數位式的驅動架構,並藉由 仗,系有I 調變方式來表現灰階,其4==⑴,_。) (TFT )沾邋ΓΠΜ、命甚 原理係措由控制薄膜電晶體 極體COLED )的發受與不發亮,* 織圖媼拄問r P τ ·、 並藉由〇led的發亮時間佔 、-息圖场時間(Frame Time )之比例來決定影像灰階。 關踺::二;:方式驅動有機發光二極體…有下述: To improve the display image, the digital drive architecture is displayed, and the gray scale is represented by the I modulation method. Its 4 == ⑴, _. ) (TFT) 邋 ΓΠΜ, the principle of life and death is controlled by the thin film transistor COLED), and the light is not illuminated, * the pattern asks r P τ ·, and the lighting time The ratio of the frame time to the-frame time determines the image gray level.踺 :: 二;: Way to drive organic light-emitting diodes ... There are the following
I 時,。電=電晶體在導通狀態 (J)、顯示器面板上各個薄膜電晶 ΐ發有的TFT均能完全截止而沒有任何輸出。 ,避ί:失irm",在於解決上述傳統之缺失 t ^缺失存在’本發明之主動式 影像均勻之方法及裝置,藉由 :尤a體顯不益 接至-正電源,藉以提高有;d::;體之陰極連 τρτ ^ V ,, 巧候尤一極體之電位,使驅動 TFT之Vsd (源極、没極電壓差)減* 心動 ’所輸出電流大小的差異縮丨。#MtsaMv通狀㈣ 為達上述之目的’本發明夕士 示器影像均勻之方法及裝置;:3二極體顯 二極體發……t卜有一驅動单元以驅動有機發光 ^儿s亥有機發光二極體之陰極係連接至一正 五、發明說明(4) ,俾藉由該正電湃捭 ,進而使驅動翠1、 ’、電壓而提高有機發光二極體之電位 減小,而Vsg (、、/^、作動時其Vsd (源極、汲極電壓差) 驅動單元因4寺性變異/極電壓差)貝,]保持不變,則當各 It age )時,可蚀夂、/有不同之起始電壓(Threshold V〇 縮小。 ④動單元於導通時其輸出電流之差異 【實施方式] 么么有關本I日月> 4 明如下: δ平、、、田内容及技術說明,現配合圖式說 【圖式簡單說明】 第1圖,係本發明之電路示意圖。 第2圖’係驅動單亓 第3圖,係驅::電〜—電壓示意圖。 …動早兀之電凍—電壓示意圖(二)。 凊參閱「筐张- ^ 阁糾-· 士 第1圖所不」,係本發明之電路示意圖。如 之方法及货罢 動式有機發光二極體顯示器影像均勻 七一者去爿Γ置,該顯不器係由複數個畫素裝置10所構成, 3古旦二:置1 〇具有一驅動單元2以驅動有機發光二極體4 二“有機發光二極體4之陰極係連接至一正電源5,俾 糟由该正電源5提供電壓而提高有機發光二極體4之電位, 進而使驅動單元2於作動時其Vsd (源極、汲極電壓差)減 小丄而Vsg (源極、閘極電壓差)則保持不變,則當各驅 動單兀2因特性變異而有不同之起始電壓(Thresh〇ld ν〇ι tage )時,可使各驅動單元2於導通時其輸出電流之差異 縮小。I time. Electricity = Transistor in the on state (J), each thin film transistor on the display panel can be completely turned off without any output. To avoid the loss of irm " lies in the method and device for solving the above-mentioned traditional lack of t ^ lack of existence of the active image uniformity of the present invention, by: especially a body display unfavorably connected to a positive power source, thereby improving the existence of; d ::; The cathode of the body is connected to τρτ ^ V, which can reduce the difference in the magnitude of the output current of the driving TFT by reducing the Vsd (source and non-polar voltage difference) of the driving TFT. #MtsaMv 通 状 ㈣ In order to achieve the above-mentioned purpose, the method and device for uniforming the image of the display device of the present invention ;: 3 diodes to display the diodes ... ... a driving unit to drive organic light emitting devices. The cathode of the light-emitting diode is connected to a positive electrode. Explanation of the invention (4), by using the positive electrode, the voltage of the organic light-emitting diode is further reduced by driving the positive voltage, and Vsg (,,, / ^, its Vsd (source, drain voltage difference) drive unit due to 4 variability / pole voltage difference), remain unchanged, when each It age), can be etched 夂、 / There are different starting voltages (Threshold V〇 is reduced. ④ The difference in the output current of the mobile unit when it is turned on. [Embodiment] Is it relevant to this day and month? 4 The following are as follows: Technical description, now with drawings [Simplified description of the drawings] Fig. 1 is a schematic diagram of the circuit of the present invention. Fig. 2 is a drive unit. Fig. 3, a drive:: electricity ~-voltage schematic. Wu Zhi electric freezing-voltage diagram (2). 凊 Refer to "Lang Zhang-^ Ge Jie-· Figure 1 ", Is a schematic circuit diagram of the present invention. If the method and the cargo strike type organic light-emitting diode display image are uniformly arranged, the display device is composed of a plurality of pixel devices 10. Once it is set to 10, it has a driving unit 2 to drive the organic light emitting diode 4. The cathode of the two "organic light emitting diode 4 is connected to a positive power source 5, and the positive power source 5 provides a voltage to improve organic light emission. The potential of the diode 4 further reduces the Vsd (source and drain voltage difference) of the driving unit 2 during operation, while Vsg (source and gate voltage difference) remains unchanged. When there is a different initial voltage (Threshold Vtage) due to the variation of the characteristics, the difference between the output currents of the driving units 2 can be reduced when they are turned on.
200417965 五、發明說明(5) 為達上述之方法,本發明所 10包括有:一開關單元】、— —旦素(Pixel )裝置 一有機發光二極體4所構成;其令早凡2、一儲存單元3及 上述之開關單元1為一薄膜電曰 1兩輸入端1 1、1 2分別各連接有二_ ( T),此開關單元 及-資料線61㈤a 妾有-知描線6〇 (Sc-Llne) 该驅動單兀2為一薄膜電晶體(TFT),此驅 輸二端21連接有一電源線62 (⑽…Line),而/一輸 入鈿2/連接至開關單元1之輸出端13; 該儲存單元3係由電容器所構成,一端連接有一電源 線62 (SUpply Line),另一端連接於開關單元1之輸出端 13, 違有機發光二極體4之陽極與上述驅動單元2之輸出端 23連接,其陰極則連接至一正電源5 ; 俾藉由該正電源5提供電壓而增加該有機發光二極體4 之陰極及陽極電位,並連帶提高該驅動單元2之輸出端23 電位,進而使該驅動單元2於作動時其Vsd (源極、汲極電 壓差)減小,而Vsg (源極、閘極電壓差)則保持不變, 則當各驅動單元2因特性變異而有不同之起始電壓(T h r e shold Voltage ;Vth)時,玎使各驅動單元2於導通時其 輸出電流之差異縮小。 此外,為使 鈞審查委員能充分了解本案所達之功效 ’請參閱「第2圖所示」,係驅動單元之電流-電壓示意圖 。如圖所示:當電源線62之輸入電壓Vdd為13V而資料線61200417965 V. Description of the invention (5) In order to achieve the above-mentioned method, the present invention includes: a switch unit], a denier (Pixel) device, and an organic light-emitting diode 4; A storage unit 3 and the above-mentioned switching unit 1 are a thin-film electrical unit, and the two input terminals 1 1 and 12 are respectively connected to two (T). This switching unit and-data line 61㈤a 妾 有-know drawing line 6〇 ( Sc-Llne) The driving unit 2 is a thin film transistor (TFT). The driving terminal 21 is connected to a power line 62 (⑽ ... Line), and / a input 钿 2 / is connected to the output terminal of the switching unit 1. 13; The storage unit 3 is composed of a capacitor. One end is connected to a power line 62 (SUpply Line), and the other end is connected to the output terminal 13 of the switch unit 1. The anode of the organic light emitting diode 4 and the drive unit 2 The output terminal 23 is connected, and the cathode thereof is connected to a positive power source 5; 俾 The potential of the cathode and anode of the organic light emitting diode 4 is increased by the voltage provided by the positive power source 5, and the output terminal 23 of the driving unit 2 is also increased Potential, so that the Vsd (source, drain) of the driving unit 2 during operation Voltage difference) decreases, while Vsg (source, gate voltage difference) remains unchanged, so when each drive unit 2 has a different starting voltage (T hre shold Voltage; Vth) due to characteristic variation, The difference between the output currents of the driving units 2 when they are turned on is reduced. In addition, in order to allow the reviewer to fully understand the efficacy achieved in this case, please refer to "shown in Figure 2", which is a schematic diagram of the drive unit's current-voltage. As shown in the figure: When the input voltage Vdd of the power line 62 is 13V and the data line 61
200417965 五、發明說明(6) —- 之輸入電壓訊號為〇 V時,在習知畫素裝置結構下,驅動單 兀2有一習知負載曲線71,故習知驅動單元之Vsd工作點( Operating Point )係座落在習知負載曲線71與驅動單元2 之特性曲線一72 (當電源線之輸入電壓(Vdd)為uv而資 料線之輸入電壓訊號(Vdata )為0V時之交點上。 、 假設TFT元件之起始電壓(Thresh〇ld v〇Hage ;nh )因製程限制而有± L5V之變異,由圖中可發現當m有 -1 jV之變異時,將造成習知驅動單元之輸出電流有233% 反觀,當使用本發明之晝素裝置1〇時,假設有機發光 :極體(0LED)之陰極電位因正電源提 :=動1元2有—本發明負載曲線73,故驅動單元^ 73盥酿動Peratlng P〇int )係座落在本發明負載曲線 73與驅動早兀2之特性曲線一72之交 ,(Vthe)同樣因製程限制而有].5V之變異5,經 貫ΐ 1企其驅動單元2之輸出電流則僅有13.6%的變里。 、、古/Λ /委Μ參閱「第3圖所示」,係驅動單元之電 :性*:二圖(二)。如圖所示:當特性曲線三82 (該 ϋ ί虽電源線62之輸入電壓(vdd)為8ν,而資料 ==入:壓訊號(Vdata)為。v時),在傳統晝素裝 ^構下’其傳統驅動單元之Vsg變小為8v,而傳統驅動 工作點(0perating P0lnt)係座落在負載曲線 -8=:先驅動單元特性曲線三83 (vsg = 8v)之交點上 。則在TFT凡件之起始電壓m (ΤίΐΓ_〇ιά vQUage)因200417965 V. Description of the invention (6) —- When the input voltage signal is 0V, under the conventional pixel device structure, the drive unit 2 has a known load curve 71, so the Vsd operating point of the drive unit is known. Point) is located at the intersection of the conventional load curve 71 and the characteristic curve 72 of the drive unit 2 (when the input voltage (Vdd) of the power line is uv and the input voltage signal (Vdata) of the data line is 0V). Assume that the initial voltage of the TFT element (Thresh〇ld v〇Hage; nh) has a variation of ± L5V due to process limitations. It can be found from the figure that when m has a variation of -1 jV, it will cause the output of the conventional drive unit. The current is 233%. In contrast, when the daylight device 10 of the present invention is used, it is assumed that the cathode potential of the organic light-emitting: pole body (0LED) is increased by the positive power source: = 1 yuan per 2-load curve 73 of the present invention, so Unit ^ 73 (Peratlng Pint) is located at the intersection of the load curve 73 and the characteristic curve of the driving early 2-72 of the present invention (Vthe) is also due to process limitations]. 5V variation 5, The output current of the drive unit 2 of the control unit 1 is only 13.6%. ,, / / / / Refer to "shown in Figure 3", which is the drive unit's electricity: properties *: two pictures (two). As shown in the figure: When the characteristic curve 82 (the input voltage (vdd) of the power line 62 is 8ν, and the data == input: the voltage signal (Vdata) is v), in the traditional daytime device structure The lower Vsg of its traditional drive unit becomes 8v, and the operating point (0perating P0lnt) of the traditional drive unit is located at the intersection of load curve -8 =: characteristic curve of the first drive unit 83 (vsg = 8v). Then the initial voltage m (ΤίΐΓ_〇ιά vQUage) of the TFT
第10頁 200417965 五、發明說明(7) 製程限制而有i: 1 · 5 V之變異時,將造成傳統驅動單元之輸 出電流有39. 6%的變異。 但,當使用本發明之驅動裝置,因為有機發光二極體 (0LED )面板共陰極電位等於5V,所以輸入電壓(Vdd ) 為13V,資料線61之輸入電壓訊號(Vdata )為〇V,驅動單 元2之Vsd工作點(Operating Point)係座落在負載曲線 二81與傳統驅動單元特性曲線二8 2 (Vsg = 13V)之交點 上。則在TFT元件之起始電壓Vth (Threshold Voltage) 因製程限制而有± 1 · 5 V之變異時,該驅動單元2之輸出電 流只有1 3· 6%的變異。 是故’傳統畫素裝置在電源供應電壓(Vdd )變小時 ’雖可使傳統驅動單元之變小,但亦同時造成vSg變小 ,反而使各個傳統驅動單元之輸出電流受特性變異的影響 變大’而無法如本發明在降低驅動單元2之v s d同時亦維持 其Vsg於一定值,故可使TFT在導通(〇N )時,輸出電流大 小較不受TFT之特性變異而影響。 上述僅為本發明之較佳實施例而已,並非用來限定本 發明實施之範圍。即凡依本發明申請專利範圍所做的均等 變化與修飾,皆為本發明專利範圍所涵蓋。Page 10 200417965 V. Description of the invention (7) Process limitation and i: 1 · 5 V variation will cause 39. 6% variation in the output current of the traditional drive unit. However, when using the driving device of the present invention, since the common cathode potential of the organic light emitting diode (0LED) panel is equal to 5V, the input voltage (Vdd) is 13V, and the input voltage signal (Vdata) of the data line 61 is 0V. The Vsd Operating Point of Unit 2 is located at the intersection of the load curve II 81 and the traditional drive unit characteristic curve II 8 2 (Vsg = 13V). When the initial voltage Vth (Threshold Voltage) of the TFT element has a variation of ± 1 · 5 V due to process limitations, the output current of the drive unit 2 has only a variation of 1 · 3 · 6%. The reason is that “the traditional pixel device becomes smaller when the power supply voltage (Vdd) is small”, although it can reduce the size of the traditional drive unit, it also causes the vSg to decrease. Instead, the output current of each traditional drive unit is affected by the variation of characteristics. It is too large to reduce the vsd of the driving unit 2 and maintain its Vsg at a certain value as in the present invention, so that when the TFT is turned on (0N), the output current is less affected by the characteristics variation of the TFT. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of implementation of the present invention. That is, all equal changes and modifications made in accordance with the scope of patent application for the present invention are covered by the scope of patent for the present invention.
第11頁 200417965 圖式簡單說明 明 說 單 簡 式 圖 ί第 第第 圖圖圖 圖 意 示 路 之 明 發 本 係 圖圖 意意 示示 壓壓 ^¾-- 流流 -^Ε ϊ^9 之之 元元 口6-口31 J 區區 Μ 馬 係係 明 說 &1ϋ # 標 之恶 式壯 圖主 [舍 輸入端..............11、 輸出端................ 開關單元............... 驅動單元............... 儲存單元............... 有機發光二極體............ 正電源................ 掃描線................ 資料線................ t源、、線................ 習知負載曲線............. 特性曲線一.............. 本發明負載曲線·· .......... 負載曲線二.............. 特性曲線二.............. 特性曲線三.............. • · · 10 ^ 21 、 22 •13 >23 —— · 1 —— · 2 —— · 3 • 4 —— · 5 • · · 60 • · · 61 —— · 62 • · · 71 • · · 72 • · · 73 • · · 81 • · · 82 • · · 83Page 11 200417965 Schematic description of simple single diagram ί 第 图图图图图图图图明图 明明 发 The present chart is intended to show pressure ^ ¾-- 流 流-^ Ε ϊ ^ 9 Yuanyuankou 6-port 31 J District Μ Ma Department of the Department of Ming & 1 之 # Bid of the evil style strong master [shed input terminal ......... 11, output terminal ... ............. Switch unit ............ Drive unit ............ Storage unit. .............. Organic Light Emitting Diode ............ Positive Power ...... Scan Line ...... Data line ...... t source, line ... ...... Known load curve ............ Characteristic curve .................. The load curve of the present invention ... ...... Load curve two ............ Characteristic curve two ............ Characteristic curve three ............ ....... • · · 10 ^ 21, 22 • 13 > 23 —— · 1 —— · 2 —— · 3 • 4 —— · 5 • · 60 60 · · 61 · · 62 • · 71 · · 72 · · · 73 · · · 81 · · · 82 · · · 83
第12頁Page 12
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