200417283 玖、發明說明： 【發明所屬之技術領域】 本發明有關於一種於一基板上製造一種發光 示裝置的 本發明進一步有關於一種發光顯示裳置及 顯示裝置之電性元件。 種包括這類 【先前技術】 美國5,962,9 70揭示一種製造一 中第一顯示電極、包含形成於該 有機顯示面板的方法，其 些第一顯示電極曝露部分 上之至少一有機電激發光媒介之有機幼处爲 J取功此層及形成於該些 有機功能層上的第二顯示電極係沉積3人一其 ”义 丞板上。自該基 板凸起達到一高度0.5 μιη的電絕緣壁壘係用來將由一金屬 蒸鍍法沉積之相鄰第二顯示電極斷電。 然而，這個製造一#光顯示裝置的方法在例％該電絕緣 壁壘的使用方面具有一些缺點。這些缺點其中之一係因該 第二電極的高電阻所致之該第二電阻厚度上的限制。甚至 ，該些壁壘在密封或膠囊式密封該發光顯示裝置以免受環 境影響時所導致之昂貴密封佈置而引起的問題。再者，該 壁S可此不穩定而需要小心處理該些結構。而且，該發光 裝置的製程彈性因該顯示裝置之發光層區段的敏感度而具 有某些限制。 【發明内容】 本發明之一目的為提供一種製造一種發光顯示裝置的改 進方法，其中至少一上述缺點被避開或至少被降低。 88192 200417283 本目的係藉由提供一種於一基板上製造一種發光顯示裝 置的方法來達成，包括之步驟有： -在該基板上或其上方沉積一第一電極層； _在主少一邯分孩第一電極層上或其上方形成許多發光層 區段， -在至少一上述發光層區段上或其上方施加至少—保護 層； -沉積一第二電極層。 本發明進一步有關於一種發光顯示裝置包括： -一基板； -於孩基板上或其上方所沉積之一第一電極層； -於孩第一電極層上或其上方所形成之許多發光層區段； -於至少某些該發光層區段上或其上方所施加之至少一 保護層； -一第二電極層。 藉由在該發光層區段上方提供一保護層，而於沉積及/或 圖案化接下來各層時得到更寬鬆的製程條件，因為易受影 響的發光層區段已受該保護層所保護。利用濕蝕刻構件之 製程可例如被執行以結構化在應用該保護層後所施加之各 層。較佳地，該些發光層區段整個被該保護層所覆蓋。 在本發明之一較佳具體貫施例中，該保護層包括或由i目 或欽所構成。鉬或鈦層或包括這些材料之各層係適用以保 獲用於濕蝕刻構件之各發光層區段。 在本發明之一較佳具體實施例中，該第二電極層係鋁及/ S8I92 -6 - 200417283 或由微影及接著之蝕刻來圖案化。經由這類方法圖案化該 第二電極層已可能經由該些發光層區段上之保護層應用來 保護該易受影響區段免受例如濕蝕刻劑影響。如此，不必 將孩習知電絕緣壁壘施用於圖案化該第二電極層，因此第 %極層厚度可能會顯著地增加。一大於〇 5 P m且最好在 fe圍0.5芏J μ1Ώ之厚第二電極層出現一低電阻及一短RC時 間’其用於高速切換頻率係重要的。甚至，該習知壁壘外 形提供有關得到一適當密封膜以囊封該結構之問題。該第 二電極層的微影圖案化為該發光元件之進一步囊封提供例 _ 如一平滑表面的適當起始點。 在本發明之一較佳具體實施例中，該圖案化第二電極層 包括其中該保護層被移除之凹部。一用於該產生結構囊封 之密封膜較佳地係沉積於該圖案化第二電極層上及該凹部 中。該密封膜可製造成例如0.5 μιη的薄，以對比於利用例 如將個別金屬蓋施用於該顯示裝置上的每一結構或發光元 件使之具有一範圍0 3至丨mm厚度的典型所施加之厚囊封 配置。該個別金屬蓋典型地係膠黏至該基板並包括一吸收· 劑材料。根據本發明之方法在不使用一吸收劑下囊封顯示 裝置的所有結構，而產生一可觀的成本效率。 應了解，前述具體實施例或其觀點可被結合。 本發明進一步有關於一包括一如前文所述發光顯示裝置 之電性元件。這類電性元件可有關於例如一行動電話、— 個人數位助理（PDA)或一可攜式電腦之手持式 J 、儿彳干及例如 一個人電腦、一電視機或一在例如一汽車儀表板上的顯示 88192 200417283 裝置之元件。 W〇00/16938揭7F —製造一彩色有機發光元件結構的方 法’其中可利用濕製程方法於色彩變化媒介之微影圖案化 足一純化層被使用。然而，本鈍化層係沉積在整合於該基 板中之OLED驅動器的第二電極層之上。 US 5,998,926揭示-製造_有機電激發光元件的方法，其 中4陰極係利用微影法形成—精準圖案。然而，該陰極層 係直接 >儿積於該基板上且於提供該有機電激發光層前被圖 案化。 【實施方式】 在圖1中，提供一基板1以製造該發光顯示裝置丨4(圖14所 示）。較佳地，該基板1相對於該發光層區段7R、7B(圖6所 不）所射出之光係透明的。合適的基板材料包含可為或不為 彈性的合成樹脂、石英、陶瓷及玻璃。該基板的總厚度典 型範圍從100至700 μιη。 一般稱之為陽極之一第一電極層2係利用例如真空蒗鍍 法或歲鍍法沉積在該基板1上或其上方。該第一電極層可接 著由微影法來圖案化。較佳地，該第一電極層2相對於該發 光顯示裝置14操作時發光層區段所射出之光係透明的。例 如，一例·如銦錫氧化物（ΙΤΟ)之透明電洞注入電極材料被使 用。例如一聚苯胺（ΡΑΝΙ)及一聚-3,4_亞乙基二氧硫代酴 (PEDOT)之傳導聚合物也適合做為透明電洞注入電梓材料 。較佳地，一ΡΑΝΙ層具有之厚度為50至200 nm，而—pED〇丁 層為100至300 nm。 88192 200417283 在圖2中，下一製造步驟被顯示，其中例如一鉬/鋁/銷 (Μ AM)層3之一低電阻金屬被沉積在該第一電極層2上或其 上万。該MAM層3接著以微影方式來定義於例如沒有產生 光所在位置處。基於接觸目的及降低對應至該第一電極層2 的電阻而施加之MAM層3。該MAM層3總厚度典型範圍可達 到 〇. 5 μ m 〇 在圖3中，下一製造步驟被顯示，其中例如諾瓦拉克酚醛 樹脂（novolack)或丙烯酸酯之一絕緣層被旋塗在圖2所示結 構之上並接著藉由微影法來圖案化。該絕緣層係例如在22〇 C下烘烤30分鐘。在圖案化中，該絕緣層限定構件4定義在 進一步沉積該發光構件7R及7B於其上之限定構件4之間之 洞穴或部位5。甚至，該限定構件4有助於如下將更詳述之 第二電極層之分隔。該限定構件4寬度典型地係為2〇 具有一厚度約為3 μιη。該絕緣層或限定構件4係具有一親水 天性’也就是，它可運用液態材料上之吸引力。 在圖4中，下一製造步驟被顯示，其中驅除其後將沉積之 流體發光物質之部分6被施加於束縛該發光構件之部位5之 限足構件4上或其上方。該驅除部分6可為例如條狀驅除材 料。XI些驅除邵分6可以各種方法得到。該驅除部分6係為 該申請人之一共同審查中的申請案主題。該驅除部分6寬度 可在範圍為例如1 〇 之5-1 5 μτη内。 圖5顯示在施加該驅除部分6後之一部分發光顯示裝置之 頂視圖。在圖5中，說明該驅除部分6可以一些方法來施加 以束缚該洞穴或部位5。圖5顯示由沿著該部位5(左行的洞 88192 200417283 X或部位5)之整個環p、 正幻展楗〈驅除部分6之束縛及由該驅除部 分6(右行的洞穴或部位 — ^ 、 一部刀束、，、丁足範例。其中該驅除 部分6束縛該部位5夕士、+ '、 、、、 万法可隨用於該流體發光物質沉積所 選之方法或用於各種洞々 ^ 、 八或#位顏巴配置而定。若例如 相同顏色係沉積㈣—行，可根據圖5右行使用只部分束绅 該部位5之驅除部分6，田太^ ， 、 、丁 、 77 因本仃中〈邵位5間之材料流不會有 菩的。 在圖6中τ製造步驟被顯示，其中該流體發光物皙係 沉積於該润穴中或該部位5處以得到該發光構件或層區段7 。注意，-發光構件或層區段7可包括例如一聚亞乙基 硫代齡(PED0丁）層及—聚對苯乙缔（PPV)之-些傳導聚合 物層。用於i色發光顯示裝置，可使用不同材料。在^ 中毛光構件或層區段7R稱為—發紅光材料而發光構件或 層區段7B稱為一發藍光材料。典型地，一發綠光之第三材 料G也一樣被施用。該發光材料佳地係^電㈣ 光材料並由噴墨印刷法來沉積。一發光構件長度係為例如 240 μπι 〇 圖7 ；：’貝不洞X或部位5之細部圖，其中該流體發紅光物 質已被沉積且說明沉積後該乾燥方法之各階段。因使用溶 釗茶鍍，而發生該箭頭所示之收縮而留下該發紅光材料於 該洞穴或部位5中。該發光材料層對應於該部位5需要放I 些尺寸以避免若戎發光顯示裝置被操作，也就是施加一 電壓至該發光層上時所產生之減短。該放大尺寸之發光材 料係可得的’因該限定構件4係為—親水天性。 88192 -10 - 200417283 —然而，該發光構件或層區段化的流體發光物質不應流至 i括不同色發光之相鄰發光構件或層區段7B。說明經 由使用做為驅除部分6之疏水障礙物所達成之本效果。 在圖8中，下一製造步驟被顯示，其中施加 光構件或層區—或其上万。本金屬化由例如= 層8’構成以減少該障礙位階以便在沉積有一通常稱為陰極 的第二t極層9之頂部上注入電子 '然&，在此所施加之製 造万法中，一額外鉬或鈦層8”被施加以做為濕蝕刻溶劑之 一擴散障礙物以保護該些發光構件或層區段711及7B。在圖 8中，該鋇層8,及該鉬或鈦層8”係顯示成一單層8。該鋇層8, 厚度係為例如5 nm，該鉬或鈦層8”厚度係為例如1〇〇 11171以 及该陰極層9厚度係為例如2 μ m。習知陰極層具有一最大厚 度約為0.5 μπι。因本發明具體實施例之厚陰極層9，用以施 加一電壓至該發光構件7之電阻已顯著地降低。 在圖9中，下一製造步驟被顯示，其中該陰極層9被圖案 化。陰極層9係由例如鋁構成。圖案化該陰極層9係由後跟 著該陰極層9之濕蚀刻凹部1 〇之微影法來執行。該濕餘刻方 法不會影響到該發光構件或層區段7R及7Β，因該鉬或鈦層 8相對於該濕蚀刻構件之作用如同一擴散障礙物。為了触 刻鋁’二例如醋酸、磷酸及硝酸之混合物可被使用。典型 地，該圖案化陰極層9之該些部分實際上整個覆蓋該發光層 區段7 R、7 Β。可執行圖案化以使該陰極層9之該些圖案化 部分係對應著該發光層區段7 R、7 Β，也就是那個光可利用 該陰極層9之該些圖案化部分由這些發光層區段7 R、7 Β所 Κ8192 200417283 射出。 在圖1 0中’下一製造步驟被顯示，其中該保護層8係於一 CF4/Ar大氣中利用電漿蝕刻將該凹部1〇部分移除。 在圖1 1中，下一製造步驟被顯示，其中一 SiN膜11被沉積 在圖1〇所示結構之上。本膜„全密閉式密封該結構避開例 如經由該凹部10之可能影響該發光層或構件7R及7B之液 體或濕氣。注意，圖10及n所示之製造方法步驟可利用内 含例如一蝕刻及一沉積工具模組之叢集工具系統一併執行 本例中’遠結構未被曝露至餘刻該擴散障礙物及以$ιΝ全 密式密封之間的空氣中。該SlN層n具有一例如〇 5 μηι之厚 度。如另一例，氮氧化矽smupb)可被使用於該密封膜u 。該膜Π的這個小厚度係足供密封使用，因該具有負外形 尖出邯分之習知電絕緣壁壘因具有該保護層8之陰極架構 新方法而不再被施用。 在圖1 2中’下一製造步驟被顯示，其中一保護層12被施 加於圖1 1所示結構上或其上方。本保護層！ 2係例如由旋塗 —抗蝕劑或壓層一乾膜抗蝕劑而得並具有一例如丨〇卜1〇1之 厚度。凹部1 3可藉由微影法得到。該抗蝕劑1 2係例如在1 20 °C下烘烤30分鐘。 在圖1 3中，一最後製造步驟被顯示，其中該SlN膜11在連 接導線以操作該發光顯示裝置而接觸到該陰極層9之所在 位置邵分被移除。SiN膜11可例如以一 CF4電漿來移除。 在圖1 4中，一可為一聚合物或小分子發光二極體元件之 發光顯示裝置14係當成一電性元件1 5之一部分來說明。該 88192 -12 - 200417283 發光顯示裝置14係為例如配置成一包括紅、綠及藍發光層 區段7R、7G及7B之行列式矩陣之顯示像素〗6之一彩色顯示 孔置。這些發光層區段可以是發光二極體。注意，該些發 光構件7R、7G及7B可被配置成例如長方形或一三角形架構 足一些架構以構成一顯示像素16。該些發光層區段711及7：6 可以一適當万式施加信號至該第一電極層2及/或該第二電 極層9來操作。 基於教示本發明目的，一種製造一種發光顯示裝置的方 法心一較佳具體實施例已說明於上。對於熟知此項技術之 人士將可顯而易見發現本發明之替代性或等效的具體實施 例並據以實施而不偏離本發明真正精神，本發明範圍只受 限於該申請專利範圍。 【圖式簡單說明】 本發明將進一步參考附圖做說明，其顯示一根據本發明 之較佳具體實施例。 圖1-4略示用於-發光顯示裝置之第-至第四製造步驟; 圖5略示一根據圖4之第四製造步驟之頂視圖； 圖6略示-用於-發光顯示裝置之第五製造步驟： 圖7略示-在該第五製造步驟時之發光構件之放大圖： 圖8-13略示用於—發光顯示裝置之第六至第七製造步驟 及 圖14略示一發光顯示裝置。 【圖式代表符號說明】 基板 88192 -13- 200417283 4 5 6 7、7R、7B、7G 8 8， 8，， 9 10、13 11 12 14 15 16 陽極 MAM層 限定構件 部位 驅除部分 發光層區段 單層 鋇層 鈥層或4目層 陰極 凹部 密封膜 保護層 發光顯示裝置 電性元件 顯示像素 8X192200417283 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a light-emitting display device on a substrate. The invention further relates to a light-emitting display device and an electrical component of the display device. A method including this type [prior art] United States 5,962,9 70 discloses a method for manufacturing a first display electrode, including a method formed on the organic display panel, at least an organic electro-excitation light medium on an exposed portion of the first display electrodes The organic part is a layer of J-work and a second display electrode system formed on the organic functional layers is deposited on a three-person board. The protrusion from the substrate reaches an electrical insulation barrier with a height of 0.5 μm. It is used to power off the adjacent second display electrode deposited by a metal evaporation method. However, this method of manufacturing a #light display device has some disadvantages in the use of the electrical insulation barrier. One of these disadvantages It is due to the limitation of the thickness of the second resistor due to the high resistance of the second electrode. Even, the barriers are caused by the expensive sealing arrangement when the light-emitting display device is sealed or encapsulated from the environment. Problem. Furthermore, the wall S may be unstable and need to handle the structures carefully. Moreover, the process flexibility of the light-emitting device depends on the light-emitting layer section of the display device. Sensitivity has certain limitations. SUMMARY OF THE INVENTION An object of the present invention is to provide an improved method for manufacturing a light-emitting display device, in which at least one of the above disadvantages is avoided or at least reduced. 88192 200417283 This object is to provide by A method for manufacturing a light-emitting display device on a substrate is achieved, which includes the steps of:-depositing a first electrode layer on or above the substrate; A plurality of light-emitting layer sections are formed above,-applying at least-a protective layer on or above at least one of the light-emitting layer sections;-depositing a second electrode layer. The present invention further relates to a light-emitting display device comprising:-a substrate; -A first electrode layer deposited on or above the child substrate;-a plurality of light emitting layer sections formed on or above the child first electrode layer;-on or above at least some of the light emitting layer sections At least one protective layer applied;-a second electrode layer. By providing a protective layer over the light-emitting layer section, the next layers are deposited and / or patterned To a more relaxed process condition, since the susceptible light-emitting layer section is already protected by the protective layer. A process using a wet-etched member can be performed, for example, to structure the layers applied after applying the protective layer. Better Ground, the light-emitting layer sections are entirely covered by the protective layer. In a preferred embodiment of the present invention, the protective layer includes or consists of a mesh or a metal layer. A molybdenum or titanium layer or includes these materials Each layer is suitable for securing each light-emitting layer section for wet-etched components. In a preferred embodiment of the present invention, the second electrode layer is aluminum and / S8I92 -6-200417283 or by lithography and Subsequent etching is used for patterning. Patterning the second electrode layer via such a method has been possible to protect the vulnerable section from, for example, a wet etchant via a protective layer application on the light emitting layer sections. In this way, it is not necessary to apply a conventional electrical insulating barrier to pattern the second electrode layer, so the thickness of the% electrode layer may increase significantly. A second electrode layer with a thickness greater than 0.5 P m and preferably 0.5 feJ μ1 Ώ around the second electrode layer exhibits a low resistance and a short RC time. It is important for high-speed switching frequencies. Furthermore, the conventional barrier profile provides a question about obtaining a proper sealing film to encapsulate the structure. The lithographic patterning of the second electrode layer provides an example of further encapsulation of the light emitting element, such as a suitable starting point for a smooth surface. In a preferred embodiment of the present invention, the patterned second electrode layer includes a recessed portion in which the protective layer is removed. A sealing film for the encapsulation of the resulting structure is preferably deposited on the patterned second electrode layer and in the recess. The sealing film can be made, for example, as thin as 0.5 μm, in contrast to the typical application with a thickness ranging from 0 3 to 1 mm using, for example, an individual metal cover applied to each structure or light emitting element on the display device. Thick capsule configuration. The individual metal cover is typically glued to the substrate and includes an absorbent material. The method according to the present invention encapsulates all the structure of the display device without using an absorbent, resulting in a considerable cost efficiency. It should be understood that the foregoing specific embodiments or their perspectives may be combined. The present invention further relates to an electrical component including a light-emitting display device as described above. Such electrical components may be related to, for example, a mobile phone, a personal digital assistant (PDA), or a portable computer, a handheld computer, a daughter-in-law, and a personal computer, a television, or a car dashboard, for example. The display shows the components of the device 88192 200417283. WO00 / 16938 Rev. 7F —Method for Manufacturing a Color Organic Light-Emitting Element Structure ’In which a lithographic pattern of a color-changing medium can be patterned using a wet process method. A purification layer is used. However, the passivation layer is deposited on the second electrode layer of the OLED driver integrated in the substrate. US 5,998,926 discloses a method of manufacturing-organic electro-excitation light elements, in which a 4-cathode system is formed by lithography-accurate patterns. However, the cathode layer is directly deposited on the substrate and patterned before the organic electro-excitation light layer is provided. [Embodiment] In FIG. 1, a substrate 1 is provided to manufacture the light-emitting display device 4 (shown in FIG. 14). Preferably, the light emitted from the substrate 1 with respect to the light emitting layer sections 7R, 7B (not shown in Fig. 6) is transparent. Suitable substrate materials include synthetic resins that may or may not be elastic, quartz, ceramics, and glass. The total thickness of this substrate typically ranges from 100 to 700 μm. A first electrode layer 2 which is generally referred to as an anode is deposited on or over the substrate 1 by, for example, a vacuum halide plating method or a metal plating method. The first electrode layer can then be patterned by lithography. Preferably, the first electrode layer 2 is transparent with respect to the light emitted from the light-emitting layer section when the light-emitting display device 14 is operated. For example, a transparent hole injection electrode material such as indium tin oxide (ITO) is used. For example, polyaniline (PANI) and poly-3,4-ethylenedioxythiofluorene (PEDOT) conductive polymers are also suitable as transparent hole injection electrode materials. Preferably, a PANI layer has a thickness of 50 to 200 nm, and the pEDO layer has a thickness of 100 to 300 nm. 88192 200417283 In Fig. 2, the next manufacturing step is shown in which, for example, a low-resistance metal of a molybdenum / aluminum / pin (MM) layer 3 is deposited on the first electrode layer 2 or tens of thousands. The MAM layer 3 is then defined in a lithographic manner at, for example, a position where no light is generated. The MAM layer 3 is applied based on the contact purpose and reducing the resistance corresponding to the first electrode layer 2. The typical thickness of the total thickness of the MAM layer 3 can reach 0.5 μm. In FIG. 3, the next manufacturing step is shown, in which, for example, an insulating layer of novolack or one of acrylic is spin-coated on the figure. The structure shown in Fig. 2 is then patterned by lithography. This insulating layer is baked, for example, at 22 ° C. for 30 minutes. In the patterning, the insulating layer-defining member 4 is defined in a cavity or site 5 between the defining members 4 on which the light-emitting members 7R and 7B are further deposited. Furthermore, the limiting member 4 facilitates the separation of the second electrode layer, which will be described in more detail below. The limiting member 4 is typically 20 in width and has a thickness of about 3 μm. The insulating layer or restricting member 4 has a hydrophilic nature, that is, it can use the attractive force on the liquid material. In Fig. 4, the next manufacturing step is shown, in which a portion 6 of the fluid luminous substance which is to be deposited thereafter is applied on or above the foot restraining member 4 which restrains the light emitting member's portion 5. The repellent portion 6 may be, for example, a strip-shaped repellent material. XI Some Shao Fen 6 can be obtained in various ways. The expulsion section 6 is the subject of an application under joint review by one of the applicants. The width of the repellent portion 6 may be in the range of, for example, 10 to 5 μτη. Fig. 5 shows a top view of a part of the light-emitting display device after the expulsion portion 6 is applied. In Fig. 5, it is illustrated that the repellent portion 6 can be applied in some ways to restrain the cave or site 5. Fig. 5 shows the entire ring p along the part 5 (the hole 88192 200417283 X or the part 5 on the left), the orthodox exhibition <the restraint of the expulsion part 6 and the expulsion part 6 (the hole or the part on the right- ^, A knife beam ,,, and foot example. The expulsion part 6 binds the part, and can be used with the method selected for the deposition of the fluid luminescent substance or for various methods Hole 々 ^, 或, or # 位 颜 巴 configuration depends. If, for example, the same color is deposited on the ridge-row, you can use only part of the repellent part 6 of the part 5 according to the right row of Figure 5, Tian Tai ^, ,, Ding , 77 Because there is no material flow in the material flow between Shao Wei 5 in this book. In Figure 6, the manufacturing steps of τ are shown, in which the fluid luminescent substance is deposited in the wet hole or 5 places to obtain the Light emitting member or layer section 7. Note that-the light emitting member or layer section 7 may include, for example, a polyethylene thio-age (PED0) layer and-some conductive polymers of polyparaphenylene vinylene (PPV) Layer. For i-color light-emitting display devices, different materials can be used. In the ^ matte member or layer section 7R is called-redness The light-emitting member or layer section 7B is called a blue-emitting material. Typically, the third material G that emits green light is also applied. The light-emitting material is preferably an electro-optical material and is printed by inkjet. The length of a light-emitting component is, for example, 240 μπι. Figure 7 ;: 'Beibudong X or a detailed view of part 5, in which the red light-emitting substance of the fluid has been deposited and illustrates the stages of the drying method after deposition The red light-emitting material is left in the cave or part 5 due to the use of Rongzhao tea plating, and the shrinkage shown by the arrow occurs. The luminescent material layer corresponds to the part 5 and needs to be placed in some dimensions to avoid Ruo Rong. The light-emitting display device is operated, that is, the reduction caused when a voltage is applied to the light-emitting layer. The enlarged-size light-emitting material is available because the limiting member 4 is-hydrophilic in nature. 88192 -10-200417283 -However, the luminescent member or layered fluid luminescent substance should not flow to the adjacent luminescent member or layer section 7B that emits light of different colors. Explain that it is achieved by using as a hydrophobic obstacle to drive out section 6. This effect. In Figure 8, the next manufacturing step is shown in which a light member or layer area is applied—or tens of thousands of it. The present metallization is composed of, for example, layer 8 ′ to reduce this barrier level so that a first layer commonly called a cathode is deposited upon deposition. Electrons are injected on top of the two t-pole layers 9. In the manufacturing method applied here, an additional molybdenum or titanium layer 8 "is applied as a diffusion barrier for the wet etching solvent to protect these. The light-emitting member or layer section 711 and 7B. In FIG. 8, the barium layer 8, and the molybdenum or titanium layer 8 "are shown as a single layer 8. The thickness of the barium layer 8, for example, is 5 nm, and the molybdenum or The thickness of the titanium layer 8 "is, for example, 10011171, and the thickness of the cathode layer 9 is, for example, 2 μm. It is known that the cathode layer has a maximum thickness of about 0.5 μm. Due to the thick cathode layer 9 of the specific embodiment of the present invention, the resistance for applying a voltage to the light emitting member 7 has been significantly reduced. In Fig. 9, the next manufacturing step is shown, in which the cathode layer 9 is patterned. The cathode layer 9 is made of, for example, aluminum. The patterning of the cathode layer 9 is performed by a lithography method followed by a wet-etched recess 10 of the cathode layer 9. The wet-relief method does not affect the light-emitting members or layer sections 7R and 7B because the molybdenum or titanium layer 8 acts as a diffusion barrier with respect to the wet-etched member. To etch aluminum ', for example a mixture of acetic acid, phosphoric acid and nitric acid can be used. Typically, the portions of the patterned cathode layer 9 actually cover the light emitting layer sections 7 R, 7 B in their entirety. Patterning can be performed so that the patterned portions of the cathode layer 9 correspond to the light-emitting layer sections 7 R, 7 B, that is, the light can use the patterned portions of the cathode layer 9 to pass the light-emitting layers. Section 7 R, 7 Β shot by K8192 200417283. In FIG. 10, 'the next manufacturing step is shown, in which the protective layer 8 is partially removed by plasma etching in a CF4 / Ar atmosphere using plasma etching. In FIG. 11, the next manufacturing step is shown, in which a SiN film 11 is deposited on the structure shown in FIG. 10. This film is hermetically sealed. This structure avoids, for example, liquid or moisture that may affect the light-emitting layer or member 7R and 7B via the recessed portion 10. Note that the steps of the manufacturing method shown in Figs. A cluster tool system of an etch and a deposition tool module is executed together in this example. The remote structure is not exposed to the air between the diffusion barrier and the hermetic seal in the rest of the time. The SlN layer n has A thickness of, for example, 0. 5 μm. As another example, silicon oxynitride smupb) can be used for the sealing film u. This small thickness of the film Π is sufficient for sealing, because it has a negative shape and sharp points. It is known that the electrical insulation barrier is no longer applied because of the new method of the cathode structure with the protective layer 8. The next manufacturing step is shown in FIG. 12 in which a protective layer 12 is applied to the structure shown in FIG. 11 or Above it. This protective layer! 2 is obtained by, for example, spin coating-resist or lamination-dry film resist and has a thickness of, for example, Plural. The concave portion 13 can be obtained by lithography. The resist 12 is baked at 120 ° C for 30 minutes, for example. In FIG. 13, a final manufacturing step is shown, in which the SlN film 11 is removed at a position where a conductive wire is connected to operate the light-emitting display device to contact the cathode layer 9. The SiN film 11 may be, for example, a CF4 Plasma to remove. In FIG. 14, a light-emitting display device 14 which can be a polymer or small molecule light-emitting diode element is described as a part of an electrical element 15. The 88192-12-200417283 The light-emitting display device 14 is, for example, a color display hole configured as a display pixel including a determinant matrix of red, green, and blue light-emitting layer sections 7R, 7G, and 7B. These light-emitting layer sections may be light-emitting diodes. Note that the light-emitting members 7R, 7G, and 7B can be configured as, for example, a rectangular or triangular structure sufficient to form a display pixel 16. The light-emitting layer sections 711 and 7: 6 can be applied in an appropriate manner. Signals are sent to the first electrode layer 2 and / or the second electrode layer 9. Based on the teaching of the present invention, a method and method for manufacturing a light-emitting display device have been described above. technology Persons will obviously find alternative or equivalent specific embodiments of the present invention and implement them without departing from the true spirit of the present invention, and the scope of the present invention is limited only by the scope of the patent application. [Brief description of the drawings] The present invention will Further description will be made with reference to the accompanying drawings, which show a preferred embodiment according to the present invention. FIGS. 1-4 schematically show the first to fourth manufacturing steps for a light-emitting display device; Top view of the fourth manufacturing step; FIG. 6 is outlined-for the fifth manufacturing step of the light-emitting display device: Fig. 7 is outlined-an enlarged view of the light-emitting member at the fifth manufacturing step: Figs. 8-13 are schematically shown For the sixth to seventh manufacturing steps of the light-emitting display device and FIG. 14, a light-emitting display device is schematically shown. [Illustration of Symbols in the Drawings] Substrate 88192 -13- 200417283 4 5 6 7, 7R, 7B, 7G 8 8, 8, 9 9 10, 13 11 12 14 15 16 The anode MAM layer defines part of the member to drive out part of the light-emitting layer section Single-layer barium layer—or 4-mesh layer cathode recess sealing film protective layer light-emitting display device electrical element display pixel 8X192