TW200417051A - Light-emitting device to emit white light - Google Patents
Light-emitting device to emit white light Download PDFInfo
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- TW200417051A TW200417051A TW92104105A TW92104105A TW200417051A TW 200417051 A TW200417051 A TW 200417051A TW 92104105 A TW92104105 A TW 92104105A TW 92104105 A TW92104105 A TW 92104105A TW 200417051 A TW200417051 A TW 200417051A
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200417051 五、發明說明(1) 發明所屬之技術領域: 本發明係提供一種白光發光裝置,特指一種具有純白 光發光二極體(L E D )裝置。 先前技術: 按習知之白光L E D ,其典型之範例,如台灣專利公 告號第3 8 5 0 6 3號「新白光L E D」發明案,其係利 用紫外光半導體為光源來激發以紅、綠、藍(R、G、B )三色螢光粉與透明膠混合之包覆層,使產生白色光顯 現。 然此種發光裝置的光源係紫外光,該紫外光會對目前 所泛用之環氧樹脂結構造成破壞,致使最後之「白光」會 產生光衰減之問題,白光亮度不強,尤其該案之包覆層係 由紅、綠、藍三種顏色螢光粉混合而成,三種顏料之比 值、製程較難以控制又是其缺點之一。 台灣專利公告號第3 8 3 5 0 8號「發光裝置及顯示 裝置」專利案,其光致發光之螢光體係包含有Y、L a 、 Gd與Sm—組中所選出之至少一元素與自A1 、Ga與 I η —組中所選出之至少一元素,且由鈽致活之石權石系 (garnet)螢光體者。 然查由鈽致活之石榴系螢光體,實質上為一種黃色螢 光體,其中以可發出短波長藍色光的氮化釓系半導體發光 元件為光源,其光源發射藍光以激發黃色螢光層藉以產生 不同波長的白光顯現,由於僅其單一波長的光與部份未被 激發的藍色光混合,故其演色性差,即白色光失真不純,200417051 V. Description of the invention (1) Technical field to which the invention belongs: The present invention provides a white light emitting device, particularly a device having a pure white light emitting diode (L E D). Prior technology: According to the conventional white LED, a typical example, such as Taiwan Patent Publication No. 3 8503, "New White LED" invention case, which uses ultraviolet semiconductor as a light source to excite red, green, The coating layer of blue (R, G, B) three-color phosphor powder and transparent glue is mixed to make white light appear. However, the light source of this light-emitting device is ultraviolet light, which will cause damage to the epoxy resin structure currently used, causing the final "white light" to cause the problem of light attenuation, and the brightness of white light is not strong, especially in this case. The coating layer is made by mixing three colors of red, green, and blue phosphors. The ratio and process of the three pigments are difficult to control and are one of its disadvantages. Taiwan Patent Bulletin No. 3 8 3 5 0 8 "Light-emitting device and display device" patent case, the photoluminescence fluorescence system includes Y, La, Gd and Sm-at least one element selected from the group and At least one element selected from the group A1, Ga, and I η — and a living garnet phosphor that has been activated by tritium. However, the pomegranate-based phosphor that is activated by radon is essentially a yellow phosphor. Among them, a thallium nitride semiconductor light-emitting element that emits short-wavelength blue light is used as a light source. The light source emits blue light to excite yellow fluorescent light. The layer generates white light with different wavelengths. Since only a single wavelength of light is mixed with some unexcited blue light, its color rendering is poor, that is, the white light is not pure.
200417051 200417051200417051 200417051
五、發明說明(3) 乡工色螢光系,受藍光光源觸發後之發光光譜(波長)為6 2 0 n m ’而綠色螢光系受藍光光源觸發後之發光光譜 (波長)為5 20nm,藍光發光光譜介於43 0〜48 0 n m 間。 依據前述之主要特徵,其中紅色光螢光粉可由橘紅色 的榮光粉替代,該橘紅色螢光粉可為Y A G ·· C e系(即 &飾為致活的石榴系),其受藍光光源觸發後之發光光譜 為 5 9 0 n m。 依據前述之主要特徵,其中螢光層2 〇可將光半導體 1 0包覆封裝成粒狀結構(如圖一所示)。 依據前述之主要特徵,其中光半導體1 0及螢光層2 0可填充覆接於反射蓋6 0的上缺口 6 2中,上缺口 6 2 中之内壁面形成光的反射面(如圖三、四所示)。 本發明再提供一種白光發光裝置(如圖二A所示)乃 包含: 一光半導體1 〇做為藍光的光源,其特徵乃在: —内具凹槽5 2之帽套5 0 ,該帽套5 0係由透明膠8 0 —體成型,其凹槽壁面5 2 1均勻塗或鍍上一層螢光層2 〇 ’該榮光層2 〇可由紅色(或橘紅色)與綠色螢光粉 &透明膠8 0均勻混合而成;巾冒套5 0可套罩於光半導 體1 0上。 依據上述次要斗寺 〇可直接由紅色或搞 混合成型,使帽套5 徵所述之白光發光裝置,其中帽套5 ^色與綠色螢光粉與透明膠8 0均勻 0直接形成螢光層2 0 (如圖二B所V. Description of the invention (3) The luminescence spectrum (wavelength) of the rural fluorescent color system is 6 20 nm after being triggered by the blue light source, and the luminescence spectrum (wavelength) of the green fluorescence system after being triggered by the blue light source is 5 20nm The blue light emission spectrum is between 43 0 and 48 0 nm. According to the foregoing main features, the red phosphor can be replaced by an orange-red glory powder. The orange-red phosphor can be a YAG · · C e series (that is, & decorated as an activated pomegranate series), which is affected by blue light. The light emission spectrum after the light source is triggered is 590 nm. According to the aforementioned main features, the fluorescent layer 20 can encapsulate and encapsulate the optical semiconductor 10 into a granular structure (as shown in FIG. 1). According to the foregoing main features, the optical semiconductor 10 and the fluorescent layer 20 can fill and cover the upper gap 6 2 of the reflective cover 60, and the inner wall surface of the upper gap 6 2 forms a light reflecting surface (see FIG. 3). , As shown in Figure 4). The present invention further provides a white light emitting device (as shown in FIG. 2A), which includes: an optical semiconductor 10 as a blue light source, which is characterized by:-a cap 5 5 with a groove 5 2 inside, the cap The sleeve 50 is formed by a transparent plastic 80 body. The groove wall surface 5 2 1 is evenly coated or plated with a fluorescent layer 2 〇 'The glory layer 2 〇 can be red (or orange-red) and green fluorescent powder & amp Transparent plastic 80 is evenly mixed; towel sleeve 50 can be put on the optical semiconductor 10. According to the above-mentioned minor temples, it can be directly formed from red or mixed to make the white light emitting device described in the cap 5, wherein the 5 5 color of the cap and the green fluorescent powder and transparent plastic 8 0 uniform 0 directly to form fluorescent Layer 2 0 (as shown in Figure 2B)
200417051 五、發明說明(4) 示)。 實施方式: (1).如圖一所示,本裝置乃以光半導體1 〇為中心,其底 部為導電體藉導電膠1 2連接於左導線架3 0,螢光 層2 0係包覆封裝於光半導體1 0上,引線S由光半 導體1 0上方穿梭出並連接於右導線架3 2上,以形 成電氣迴路,其中透明膠8 0將光半導體1 0、螢光 層20及左、右導線架30 、32上半段予以包覆以 形成粒狀結構。 光半導體1 0最好由氮化物系化合物的半導體製成, 可發射出藍光做為光源;螢光層2 0係由紅、綠色二 種顏色的螢光粉與透明膠以適當的比例混合而成,當 光半導體1 0發出藍光時,藍光之波長主峰值介於4 30〜480n m範圍,而螢光層20中的紅色螢光 粉係為Y A G : E U系(即以銪元素致活的石榴系) ,當紅色螢光層系受藍光的激發時,乃改變藍光波長 ,而以光譜波長的主峰值為6 2 0 n m向外發射出, 綠色螢光粉係S r G a 2 S 4 : E U系(即以銪元素 致活的權化系)其受藍光的激發,乃改變藍光波長, 而以光譜波長之主峰值為5 2 0 n m發射出。因此紅 、綠色螢光層系吸收藍光的一部份波長並改變藍光4 7 0 nm之波長,進一步發出二種波長(即6 2 0 η m、520nm)且與藍光波長不同的光,該二不同 波長的光加上部份未被激發之藍光,這三種不同波長200417051 V. Description of Invention (4)). Embodiments: (1). As shown in Figure 1, the device is centered on the optical semiconductor 10, and the bottom is a conductive body connected to the left lead frame 30 with a conductive adhesive 12, and the fluorescent layer 20 is coated. Packaged on the optical semiconductor 10, the lead S is shuttled from above the optical semiconductor 10 and connected to the right lead frame 32 to form an electrical circuit, in which the transparent adhesive 80 connects the optical semiconductor 10, the fluorescent layer 20 and the left The upper half of the right and left lead frames 30 and 32 are covered to form a granular structure. The optical semiconductor 10 is preferably made of a nitride-based compound semiconductor, which can emit blue light as a light source; the fluorescent layer 20 is composed of red and green fluorescent powder and transparent glue in an appropriate ratio. For example, when the optical semiconductor 10 emits blue light, the main peak wavelength of the blue light is in the range of 4 30 to 480 nm, and the red phosphor powder in the fluorescent layer 20 is YAG: EU system (that is, activated by thallium element). Pomegranate series). When the red fluorescent layer is excited by blue light, the wavelength of blue light is changed, and the main peak of the spectral wavelength is emitted at 6 2 0 nm. The green phosphor powder is S r G a 2 S 4 : The EU system (that is, the weighted system activated with plutonium) is excited by blue light to change the wavelength of blue light, and emits with the main peak of the spectral wavelength being 5 20 nm. Therefore, the red and green fluorescent layers absorb a part of the wavelength of blue light and change the wavelength of 470 nm of blue light, and further emit two kinds of light (that is, 6 2 0 η m, 520nm) that are different from the wavelength of blue light. Light of different wavelengths plus some unexcited blue light, these three different wavelengths
200417051200417051
的光聚集混合,被人眼視覺時,乃被定義為白光。由 於該白光的產生係非與紫外光光源混合,因此所得之 純白光具有強度強,不虞色衰減者,尤有甚者係以三 色光(R、G、B )的混合來產生白光,使其演色性 佳。 (2).第二圖A所示,係表示帽套5 〇係内呈圓凹槽5 2 , 其凹槽壁5 2 1上’被均勻塗覆或或鑛上一層螢光層 2 0 ,該帽套5 0套接於光半導體丄〇左、右導線^ 3 0、3 2上,藉此當光半導體丄〇發射出藍光時, 可激發螢光層2 0中之紅、綠色螢光材料,以發出二 種波長不同的光’並經透明的帽套5 〇透射出,圓凹 槽5 2内之空間可呈真空狀,光半導體1 〇其正、負 極導電接腳S 1、s 2分別焊接於左、右導線架3 〇 、3 2上,左、右導線架3 0、3 2之間以絕緣元件 3 5區隔,以形成電氣迴路。第二b圖所示帽套5 〇 係由螢光層2 0 —體壓模成型者,因此帽套5 〇即為 螢光層2 0 ,同樣可發出二種波長不同的光。 … 第三圖所示,係一反射蓋6 〇為基座,螢光層2 〇填 充嵌覆於上缺口 6 2中,光半導體i 〇底部二絕緣膠 1 4固接於上缺口 6 2之底部,引線s 3、S 4分別 連ΐϊί、右導線架3 〇、3 2上,以形成電氣:路 ,光半導體1 〇所發射之藍光,以及藍光與螢光層2 0中所發出之紅、綠光均可由上缺口62其内壁^的 反射出上缺口 6 2外,以使在螢光層2 〇上,顯現白When light is collected and mixed, it is defined as white light when viewed by the human eye. Because the generation of the white light is not mixed with the ultraviolet light source, the pure white light obtained has a strong intensity and is not subject to color attenuation, and especially it is a mixture of three-color light (R, G, B) to produce white light, making Good color rendering. (2). As shown in the second figure A, it shows that the cap sleeve 50 has a circular groove 5 2 in the system, and the groove wall 5 2 1 is uniformly coated or mineralized with a fluorescent layer 20. The cap 50 is sleeved on the left and right wires ^ 30 and 32 of the optical semiconductor, so that when the optical semiconductor emits blue light, the red and green fluorescent lights in the fluorescent layer 20 can be excited. Material to emit two kinds of light with different wavelengths' and transmitted through the transparent cap 5. The space in the circular groove 5 2 can be vacuum-shaped. The optical semiconductor 10 has the positive and negative conductive pins S 1 and s. 2 Welded to the left and right lead frames 30 and 32 respectively, and the left and right lead frames 30 and 32 are separated by insulation elements 35 to form an electrical circuit. The cap 50 shown in the second figure b is made of a fluorescent layer 20-a body compression molding, so the cap 50 is the fluorescent layer 20 and can also emit two kinds of light with different wavelengths. … As shown in the third picture, a reflective cover 60 is used as a base, and a fluorescent layer 20 is filled and embedded in the upper notch 62, and an optical semiconductor i. Bottom two insulating adhesives 14 are fixed to the upper notch 62. At the bottom, leads s 3 and S 4 are connected to the right lead frame 3 0 and 3 2 respectively to form an electrical circuit: the blue light emitted by the optical semiconductor 10 and the red emitted by the blue light and the fluorescent layer 20 Both green and green light can be reflected from the inner wall ^ of the upper notch 62 to the outside of the upper notch 62, so that the fluorescent layer 20 appears white.
200417051 五、發明說明(6) 光者。 第四圖所示,係反射蓋6 0與螢光層2 0及光半導體 1 0結合,其功效與第三圖技術相同,惟光半導體1 0之引線S 3 、S 4係分別由底部穿梭出,進一步分 別連接於左、右導線架3 0、3 2上,以形成電氣迴 路。200417051 V. Description of invention (6) Lightman. As shown in the fourth figure, the reflection cover 60 is combined with the fluorescent layer 20 and the optical semiconductor 10, and its effect is the same as the technology in the third figure. However, the leads S 3 and S 4 of the optical semiconductor 10 are shuttled from the bottom respectively. And further connected to the left and right lead frames 30 and 32 respectively to form an electrical circuit.
第1〇頁 200417051 圖式簡單說明 第一圖為本發明縱向斷面圖。 第二A圖為本發明另一實施例縱向斷面圖。 第二B圖為本發明再一實施例縱向斷面圖。 第三圖為本發明與反射蓋粘著之縱向斷面圖。 第四圖為本發明與反射蓋粘著之再一實施例斷面圖。 另件編號: 光半導體---10 絕緣膠----14 導電膠----12 螢光層----20 左導線架---30 右導線架---32 絕緣元件---35 帽套-----5 0 凹槽-----—5 2 凹槽壁----5 2 1 反射蓋----6 0 上缺口----6 2 透明膠----8 0 接腳-----SI、S2 引線-----S 、S3 、S4Page 10 200417051 Brief description of the drawings The first figure is a longitudinal sectional view of the present invention. FIG. 2A is a longitudinal sectional view of another embodiment of the present invention. FIG. 2B is a longitudinal sectional view of still another embodiment of the present invention. The third figure is a longitudinal sectional view of the present invention adhering to a reflective cover. The fourth figure is a cross-sectional view of still another embodiment of the invention adhering to a reflective cover. Part Number: Optical Semiconductor --- 10 Insulating Adhesive ---- 14 Conductive Adhesive ---- 12 Fluorescent Layer ---- 20 Left Lead Frame --- 30 Right Lead Frame --- 32 Insulation Element- -35 Cap sleeve ----- 5 0 groove ------ 5 2 groove wall ---- 5 2 1 reflection cover ---- 6 0 upper notch ---- 6 2 transparent glue- --- 8 0 pin ----- SI, S2 lead ----- S, S3, S4
第11頁 ’又.Page 11 ’again.
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TW92104105A TWI252593B (en) | 2003-02-26 | 2003-02-26 | Light-emitting device to emit white light |
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TW92104105A TWI252593B (en) | 2003-02-26 | 2003-02-26 | Light-emitting device to emit white light |
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