TW200416463A - Connection electrode and image display device - Google Patents

Connection electrode and image display device Download PDF

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TW200416463A
TW200416463A TW92135492A TW92135492A TW200416463A TW 200416463 A TW200416463 A TW 200416463A TW 92135492 A TW92135492 A TW 92135492A TW 92135492 A TW92135492 A TW 92135492A TW 200416463 A TW200416463 A TW 200416463A
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conductive layer
connection electrode
layer
item
patent application
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TW92135492A
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Chinese (zh)
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TWI230829B (en
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Toshiaki Arai
Midori Suzuki
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Chi Mei Optoelectronics Corp
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Abstract

The object of the present invention is to provide a connection electrode which is not broken due to proceeding a corrosion reaction. The solution of the present invention includes: a conductive layer 7 disposed on a substrate 1 and having a planar and rectangular shape; and an insulating layer 4 stacked on the substrate 1 and above the local area of a protecting conductive layer 3. The insulating layer 4 covers a terminal part in a short edge direction of the conductive layer 7. The area on the protecting conductive layer 3 that is not covered by the insulating layer 4 forms an opening part 5 which is provided as a connection part corresponding to a connected object. In addition, a surface conductive layer 6 is formed on the opening part 5 and the insulating layer 4. The widths W1 and W2 of the areas of the insulating layers stacked on the conductive layer 7 are different from each other. With such a structure, it is able to suppress the proceeding of corrosion reaction, and suppress the breaking of the connection electrode.

Description

200416463 玖、發明說明·· 技術領域 極,4争 有致 示裝置。 。本發明係'關種連接電路構造間所用之連接電 韻於可防止基板上佔有面積增加及接觸電阻減低, 中制因腐⑽斷線之連接電極’及利用連接電極之圖像顯 先前技術 、先則’例如為了連接設置於基板上之電路構造,與 於其他基板上之電路構造,使用_種連接電極,其係以露 出基板表面上之導電層而形成。 & 圖7係先前使用之連接電極構造模式圖。如圖7所示, =前構造之連接電極係於基板上具有依序疊置之低電阻導 電層102、保護導電層103之構造。保護導電層1〇3上面之 短邊方向兩端部以絕緣11G4覆蓋,未以絕緣層⑽覆蓋 〈區域形成開π部1G5。而開口部1G5及絕緣層1G4之表面 以銦錫氧化層IT0(Indium Tin Oxide)等形成之表面導電層 106覆蓋。又先前構造之連接電極亦如圖7所示,具有左右 對稱< 構造,具有保護導電層1〇3上面中以絕緣層1〇4覆 蓋之區域具有相等之寬度(例如參考專利文獻1)。 低%阻導電層1 〇2與形成於基板1 〇 1之其他區域上電路 導通,用TAB之緊密裝置將開口部105與外部電路之連接 端子連接,並以電氣連接基板1〇1上之電路與外部電路。200416463 发明 、 Explanation of the Invention ·· Technical Field Extremely, there is a display device. . The invention relates to a connection electrode used in the connection circuit structure, which can prevent an increase in occupied area on the substrate and a reduction in contact resistance, and a connection electrode of the middle system which is broken due to corrosion. First, for example, in order to connect a circuit structure provided on a substrate and a circuit structure provided on another substrate, a connection electrode is used, which is formed by exposing a conductive layer on the surface of the substrate. & Fig. 7 is a schematic diagram of a connection electrode structure previously used. As shown in FIG. 7, the connection electrode of the front structure has a structure in which a low-resistance conductive layer 102 and a protective conductive layer 103 are sequentially stacked on the substrate. The two ends in the short-side direction of the upper surface of the protective conductive layer 103 are covered with an insulating 11G4, and are not covered with an insulating layer 区域, and the opening portion 1G5 is formed. The surfaces of the openings 1G5 and the insulating layer 1G4 are covered with a surface conductive layer 106 formed of an indium tin oxide layer IT0 (Indium Tin Oxide) or the like. Also, as shown in FIG. 7, the previously structured connection electrode has a left-right symmetric < structure, and the area covered by the insulating layer 104 among the conductive conductive layer 103 has an equal width (for example, refer to Patent Document 1). The low-% resistance conductive layer 1 〇2 is electrically connected to other areas formed on the substrate 1 〇1, and the opening 105 is connected to the connection terminal of the external circuit with a tight device of TAB, and the circuit on the substrate 101 is electrically connected. With external circuit.

O:\85\856lODOC 200416463 專利文獻l 美國專利第5483082號說明書(第36_37頁,第2D圖) 發明内容 發明欲解決之課題 然而圖7所示連接電極,因具有開口部ι〇5露出基板表 面之構造,故有耐久性之問題。具體而言,導電層中由於 開口部1〇5下層之低電阻導電層1〇2與外氣等反應致一部 分腐蝕,因該腐蝕擴及低電阻導電層1〇2整體而有斷線之 問題。 如上述,已知連接電極具有以反應非活性的保護導電層 1〇3保護低電阻導電層102之構造,惟實際上在内部的低電 阻導電層102上會形成許多起因於熱遷移等的空隙,低電 阻導電層102之一邵分露出表面上。露出表面上之低電阻 導電層102通常形成氧化物,惟有時因酸、鹼或操作時汗 等體液附著於開口邵105所形成之氧化物會有被去除的狀 況。氧化物被去除的狀況,於氧化物存在之區域附近構成 低違阻導電層1〇2之金屬材料與酸等之間產生腐姓反應, 因該腐蝕反應擴及低電阻導電層1 〇2整體以至斷線。特別 在低黾阻導電層102由铭形成,及表面導電層1〇6由I TO 形成之狀況下’透過電池效應產生爆發性反應。 低氣阻導電層1 〇 2中被絕緣層10 4覆蓋之區域因不致露 0\85\856lO.DOC -6 - 出表面上,不會形成上述腐蝕反應之起點。惟隨著於開口 部105所產生之反應逐漸進行,反應亦擴及被絕緣層1〇4 覆盖之區域,最後發生斷線。又即使反應擴及整體前,有 時由隨著反應產生之氣體壓力破壞内部構造,而有發生斷 線之情形。 故從防止發生斷線之觀點而言,加寬低電阻導電層1〇2 中被絕緣| 1G4覆蓋之區域寬度之構造為有效。該構造係 例如加大低電阻導電層1〇2短邊方向寬度即可實現。然而, 有鑑於近年來電子電路之積體化及小型化,實際上不宜加 大確保於基板表面用於連接電極之區域,實現加大低電阻 導%層102寬度 < 構造有困難。尤其使用液晶等之圖像顯 示裝置等,隨著顯示圖像之高精細化,掃描線及信號線之 支數增多,分別與外部電路連接所需連接電極數亦增加。 故從達成高精細化之觀點,為各連接電極確保廣大區域極 為困難,加大低電阻導電層1〇2寬度並不切實際。 又為防止發生斷線計,亦考慮減小開口部i 〇5之面積以 加寬被絕緣層104覆蓋之區域寬度之構造。由於採用該構 k,可減低腐蝕反應之發生機率,並可延遲腐蝕反應擴及 低私PiL導電層102端部。惟將產生因減小開口部i 〇5寬度 致接觸電阻加大〈另—問題。尤其因使用液晶之圖像顯示 裝置等’必需正確控制藉掃描線及信號線供給像素電極之O: \ 85 \ 856lODOC 200416463 Patent Document l US Patent No. 5,483,082 (page 36_37, 2D drawing) Summary of the Invention Problems to be Solved by the Invention However, the connection electrode shown in FIG. 7 has an opening portion ι05 exposed on the substrate surface. Due to its structure, there is a problem of durability. Specifically, a part of the conductive layer is corroded due to the reaction between the low-resistance conductive layer 10 below the opening 105 and the outside air, and this corrosion spreads to the entire low-resistance conductive layer 102 and there is a problem of disconnection. . As described above, it is known that the connection electrode has a structure that protects the low-resistance conductive layer 102 with a reactive inactive protective conductive layer 103, but actually, many voids due to thermal migration and the like are formed in the low-resistance conductive layer 102 inside. One of the low-resistance conductive layers 102 is exposed on the surface. The low-resistance conductive layer 102 on the exposed surface usually forms an oxide, but sometimes the oxide formed by body fluids such as acid, alkali, or sweat during operation may be removed. In the state where the oxide is removed, a rotten reaction occurs between the metal material constituting the low-resistance conductive layer 102 and the acid near the area where the oxide exists, and the corrosion reaction extends to the entire low-resistance conductive layer 102. Even disconnected. In particular, in the case where the low-resistance conductive layer 102 is formed by an intaglio and the surface conductive layer 10 is formed by ITO, an explosive reaction occurs through the cell effect. The area covered by the insulating layer 10 4 in the low-air-resistance conductive layer 102 will not be exposed 0 \ 85 \ 856lO.DOC -6-on the surface, the starting point of the above-mentioned corrosion reaction will not be formed. However, as the reaction generated in the opening 105 progressed gradually, the reaction also expanded to the area covered by the insulating layer 104, and finally a disconnection occurred. Even before the reaction spreads to the whole, the internal structure is sometimes destroyed by the pressure of the gas generated by the reaction, and disconnection may occur. Therefore, from the viewpoint of preventing disconnection, it is effective to widen the area of the low-resistance conductive layer 102 covered by the insulation | 1G4. This structure can be realized by, for example, increasing the width of the low-resistance conductive layer 102 in the short-side direction. However, in view of the integration and miniaturization of electronic circuits in recent years, it is not practical to increase the area for connecting electrodes on the surface of the substrate, and it is difficult to achieve a wide structure of the low-resistance conductive layer 102 < Especially for image display devices using liquid crystals, etc., as the display image becomes finer, the number of scanning lines and signal lines increases, and the number of connection electrodes required for connection with external circuits also increases. Therefore, from the viewpoint of achieving high definition, it is extremely difficult to secure a large area for each connection electrode, and it is not practical to increase the width of the low-resistance conductive layer 102. In order to prevent the occurrence of disconnection, the structure of reducing the area of the opening i 05 to widen the width of the area covered by the insulating layer 104 is also considered. Since the structure k is adopted, the occurrence of the corrosion reaction can be reduced, and the corrosion reaction can be delayed to extend to the end of the low-poly PiL conductive layer 102. However, the increase in the contact resistance due to the reduction in the width of the opening portion i 05 (another problem). Especially because of the use of liquid crystal image display devices, etc., it is necessary to correctly control the supply of pixel electrodes by scanning lines and signal lines.

O:\85\856IODOC 200416463 電位,故抑制因接觸電阻加大以致電位變動,此一必要性 隨之彳疋同。一方面將接觸電阻之減小抑制在容許範圍,另 一方面減小開口部105寬度時,雖能減低發生斷線之比例 至某程度,惟根本解決有困難。 本發明有鑑於上述先前技術之問題,其目的在於提供一 種可防止基板上佔有面積之增加,及有效抑制因腐蝕而斷 線之連接電極,及利用此連接電極之圖像顯示裝置。O: \ 85 \ 856IODOC 200416463 potential, so it is necessary to suppress the change in call position due to the increase in contact resistance. On the one hand, the reduction of the contact resistance is suppressed to a permissible range, and on the other hand, when the width of the opening 105 is reduced, the proportion of disconnection can be reduced to a certain degree, but it is difficult to solve the problem. The present invention has been made in view of the above-mentioned problems of the prior art, and an object thereof is to provide a connection electrode capable of preventing an increase in the occupied area on a substrate and effectively suppressing disconnection due to corrosion, and an image display device using the connection electrode.

解決課題之方法 為達成上述目的,申請專利範圍第1項之連接電極,其 係具有開口部,該開口部由覆蓋在部分導電層上面之絕緣 層所區隔,该連接電極係使用於連接外部電路之連接構 件,其特徵在於:上述導電層上面之一方端部與對應該端 部之上述開口部端部間之距離,比上述導電層上面之另一To solve the above problem, in order to achieve the above-mentioned object, the connection electrode of the first patent application range has an opening portion separated by an insulating layer covering a part of the conductive layer. The connection electrode is used to connect the outside The circuit connecting member is characterized in that the distance between one end of the upper surface of the conductive layer and the end of the opening portion corresponding to the end is longer than the other of the upper surface of the conductive layer.

方端部與對應該另一方端部之上述開口部端部間之距離有 更大之數值。 依本申請專利範圍第1項之發明,由於構成絕緣層覆蓋 之導%層上面寬度兩端部互異之構造,故開口部至導電屏 端部之距離互異,即使萬一開口部之一部分開始腐餘反鹿 時’惟兩端部附近區域腐触反應之進行速度互異,而可和 制導電層斷線。 又申清專利範圍第2項有關之連接電極係如上述發明 0\85\856IO.DOC -8 - 200416463 其中有關上述導電層之短邊方向中心軸與上述開口部中心 車由’於水平方向隔開一定距離。 依本申請專利範圍第2項之發明,由於構成有關導電層 足短邊方向中心軸與開口部中心軸僅隔開一定距離之構 造’致以絕緣層覆蓋之導電層部分之寬度互異,故可抑制 因腐蝕反應之斷線。 又申凊專利範圍第3項有關之連接電極係如上述發明, 其中上述導電層表面之一方端部與對應該端部之上述開口 鲁 部端部間之距離為10 # m以上。 又申請專利範圍第4項有關之連接電極係如上述發明, 其中上述導電層係含依序疊置低電阻層,與保護該低電阻 層之保護導電層之多層構造形成。 又申請專利範圍第5項有關之連接電極係如上述發明, 其中於上述導電層及上述絕緣層上面,更配置表面導電層。 又申請專利範圍第6項有關之連接電極係如上述發明,_ 其中上述開口部係以複數個形成於上述導電層上面。 . 又申印專利範圍第7項有關之一種圖像顯示裝置,其特 , 徵為具有陣列基板,其係包括:像素電極,對應顯示像素 配置者;開關元件,對應該像素電極配置者;信號線,藉 該開關元件將顯示信號供給上述像素電極者;掃描線,供 給控制上述開關元件之驅動狀態之掃插信號者;及連接電 O:\85\85610.DOC -9- 416463 "/、係如申凊專利範圍第1〜6項,連接上述信號線及/或 上述掃描線與外部驅動電路者。 又申請專利範圍第8項有關之圖像顯示裝置係如上述發 明,其中更具有:外部驅動電路,其係藉上述連接電極連 接者,相對基板,其係相對於上述陣列基板配置者;及液 曰曰層,其係封入上述陣列基板與上述相對基板之間者。 又申請專利範圍第9項有關之圖像顯示裝置係如上述發 明,其中更具有背光光源,其係供給透過上述液晶層内之 光者。 實施方式 實施形態 以下,參考圖說明本發明實施形態之連接電極及利用連 接電極之圖像顯示|置。②明時適當參考之圖式係為模式 圖,而需注意與實際結構有出入之處。此外,即使於圖示 相互間當亦含有彼此之尺寸關係及比例互異之部分。 第一實施例 首先’說明第一實施例有關之連接電極。關於第一實施 例之連接電極具有以絕緣層覆蓋導電層短邊方向兩端部之 構造,透過導電層中絕緣層下區域寬度為互異值,以抑制 連接電極斷線。圖1(a)係關於[實施例之連接電極構造 剖面圖’目1⑻係關於第-實施例之連接電極平面圖。以 OA85\856lO.DOC -10- 200416463 下’請參考圖l(a)、圖1(b)等說明第一實施例。 關於第一實施例之連接電極係如圖丨(a)所示,具有·導 電層7,其係配置於基板丨上,平面形狀呈矩形狀者;及絕 緣層4,其係疊置於基板丨上及保護導電層3之—部分區域 上者。保護導電層3上未以絕緣層4覆蓋之區域,形成開 口部5,其係為與連接對象之連接部。此外,於開口部$ 及絕緣層4上形成由ITO等形成之表面導電層6。 導電層7具有依序將低電阻導電層2與保護導電層3疊 置之構造。低電阻導電層2具有與設於基板其他區^ 之内部電路(省略圖示)電氣連接之構造。又,為了將内部電 路與連接對象之外部電路間產生之電位差㈣在容許範= 内’低電阻導電層2最好以銘⑷)、銅(Cu)等低電阻之導電 性材料形成。 部 保護導電層3係抑制因低電阻導電層2接觸外氣致開口 5表面整體氧化’使接觸電阻值增加或絕緣化者。具體 而言’保護導電層3係由且古 係由具有對外氣反應非活性特性之鉬 (M〇)等形成,例如具有約5〇nm之膜厚。 絕緣層4係覆蓋低電阻導電層2及保護導電層3之端, 附近:以保護低電阻導電層2及保護導電層3之端部者· S 土板上叹置複數連接電極時’絕緣層4並且有4 彼此連接電極間絕緣之功能。形“緣層4之㈣;The distance between the square end and the end of the opening corresponding to the other end has a larger value. According to the invention of item 1 of the patent scope of the present application, since the two ends of the width of the conductive layer covering the insulating layer cover are different from each other, the distance from the opening to the end of the conductive screen is different, even if part of the opening At the beginning of rotten anti-deer, the speed of the decay reaction in the vicinity of the two ends is different, and the conductive layer can be disconnected. It also claims that the connection electrode related to the second item of the patent scope is the above-mentioned invention 0 \ 85 \ 856IO.DOC -8-200416463, wherein the center axis of the short side direction of the conductive layer and the center of the opening portion are separated by the horizontal direction. Drive a certain distance. According to the invention in item 2 of the patent scope of this application, since the central axis of the short side of the conductive layer foot and the central axis of the opening portion are formed only by a certain distance, the widths of the conductive layer portions covered by the insulating layer are different from each other. Prevents disconnection due to corrosion reactions. The connection electrode related to item 3 of the patent application is as described above, wherein the distance between one end of the surface of the conductive layer and the end of the opening and the end corresponding to the end is 10 # m or more. The connection electrode related to the fourth item of the patent application is the above-mentioned invention, wherein the conductive layer is formed by a multilayer structure in which a low-resistance layer is sequentially stacked and a protective conductive layer that protects the low-resistance layer. The connection electrode related to the fifth item of the patent application is the above-mentioned invention, and a surface conductive layer is further disposed on the conductive layer and the insulating layer. The connection electrode related to the sixth item of the patent application is the same as the above-mentioned invention, wherein the openings are formed on the conductive layer by a plurality of openings. An image display device related to item 7 of the patent application, which is characterized by having an array substrate, which includes: a pixel electrode corresponding to a display pixel arrangement; a switching element corresponding to a pixel electrode arrangement; a signal The scanning element is used to supply the display signal to the pixel electrode; the scanning line is used to supply the scanning signal that controls the driving state of the switching element; and the connection is O: \ 85 \ 85610.DOC -9- 416463 " / 2. It is connected to the above signal line and / or the above scan line and the external driving circuit, as described in the items 1 to 6 of the patent application scope. The image display device related to the eighth aspect of the patent application is the above-mentioned invention, which further includes: an external driving circuit, which is connected by the connection electrode, and is opposed to the substrate, which is disposed relative to the array substrate; and The layer is a layer enclosed between the array substrate and the opposite substrate. The image display device related to the 9th aspect of the patent application is the above-mentioned invention, which further has a backlight light source, which supplies light transmitted through the liquid crystal layer. Embodiments Embodiments Hereinafter, a connection electrode and an image display using the connection electrode according to an embodiment of the present invention will be described with reference to the drawings. ② The diagrams that are properly referenced in the future are model diagrams, and it should be noted that there are differences from the actual structure. In addition, even if they are shown in the drawings, they also include mutually different dimensional relationships and proportions. First Embodiment First, the connection electrodes according to the first embodiment will be described. The connection electrode of the first embodiment has a structure in which both ends of the short-side direction of the conductive layer are covered with an insulating layer. The width of the area under the insulating layer in the conductive layer is different from each other to suppress the disconnection of the connecting electrode. Fig. 1 (a) is a plan view of a connection electrode according to the first embodiment. OA85 \ 856lO.DOC -10- 200416463 'Please refer to FIG. 1 (a), FIG. 1 (b), etc. to explain the first embodiment. As shown in FIG. 丨 (a), the connection electrode of the first embodiment has a conductive layer 7 which is arranged on a substrate and has a rectangular planar shape; and an insulating layer 4 which is stacked on the substrate丨 the upper part of the protective conductive layer 3-part of the area. The area on the protective conductive layer 3 that is not covered by the insulating layer 4 forms an opening portion 5 which is a connection portion with a connection target. In addition, a surface conductive layer 6 made of ITO or the like is formed on the opening portion and the insulating layer 4. The conductive layer 7 has a structure in which a low-resistance conductive layer 2 and a protective conductive layer 3 are sequentially stacked. The low-resistance conductive layer 2 has a structure electrically connected to an internal circuit (not shown) provided in another region of the substrate. The low-resistance conductive layer 2 is preferably made of a low-resistance conductive material such as copper (Cu) in order to reduce the potential difference between the internal circuit and the external circuit to which it is connected. The part of the protective conductive layer 3 suppresses the oxidation of the entire surface of the opening caused by the contact of the low-resistance conductive layer 2 with the outside air and the increase in the contact resistance or insulation. Specifically, the 'protective conductive layer 3 is made of molybdenum (M0) and the like, and the ancient system is made of molybdenum (M0), which has an inert gas-reactive property, and has a film thickness of about 50 nm, for example. The insulating layer 4 covers the ends of the low-resistance conductive layer 2 and the protective conductive layer 3, and the vicinity: to protect the ends of the low-resistance conductive layer 2 and the conductive layer 3 4 and 4 have the function of insulation between the electrodes connected to each other. Shaped "edge layer 4 ㈣;

O:\85\856lODOC 200416463 有絕緣性者,則可用任意材料,惟一般多用Si〇2、siNx等。 又圖1(a)中絕緣層4係單層構造,惟並非必需限於該構造, 亦可為用複數絕緣材料之多層構造。 又關於第一實施例之連接電極係構成導電層7 一方端部 與對應該端部之開口部5之端部間之距離Wi,具有大於導 電層7另一方端部與對應該另一方端部之開口部5之端部 間之距離W2之值。具體而言,導電層7及開口部5係分別 平面形狀為矩形狀,關於短邊方向係以中心軸朝水平方向 以一定距離隔離配置,端部間之距離Wi、W2為彼此互昱 之值。又導電層7之短邊方向寬度及開口部5之寬度並非 特別限定之要素,可為與先前同程度之值。第一實施例之 連接電極由於具有端部間之距離Wl、W2*分別互異之值 之構造,故可減低因腐蝕反應產生斷線之可能性,其情形 說明如下。 如前已說明,連接電極之斷線係以開口部5之一部分為 起點開始腐蝕反應’逐漸擴及周邊區域,最後腐蝕達到低 電阻導電層2之短邊方向兩端部而產生。故從開口部$之 4分產生腐蝕反應至斷線所需時間係相應於從腐蝕反應 起點至低電阻導電層2之短邊方向端部之距離,由加長該 距離即可抑制斷線之發生。 然而,基板 上配置與外部電路連接之 内部電路,因該 O:\85\856I0 DOC -12- 200416463 内部電路需確保廣大區域,故要垆 — 筑要擴大連接電極之佔有面積 實乃困難。一方面’為防止連接電極之斷線,纟需完全抑 制低電阻㈣2之腐触反應擴大,而只要抑制腐蚀反應 向一方端部之擴大能確保低電阻導電層2之導通即可 因此,第一實施例係將開口部5之中心軸與導電層7之 中心軸隔離一定距離,俾不改變導電層7之短邊方向寬度, 將腐蝕反應之起點與導電層7之短邊方向端部間之距離予 以最大化。由於採用該構造,使第一實施例之連接電極之 開口部5之一部分產生之腐蝕反應達到低電阻導電層2兩 端部所需時間加長,而可抑制斷線之發生。 圖2係第一貫施例之連接電極,腐姓反應發生時反應擴 大模式圖。如圖2(a)所示,於開口部5下保護導電層3之 一部分形成空穴,由於在對應該空穴之低電阻導電層2之 局邵區域上附著酸、驗等而形成腐姓反應區域。再者, 在圖2(a)之模式圖下,為了容易了解,以開口部5之短邊 方向中心軸上腐姓反應開始之例說明。 而如圖2(b)所示,腐蚀反應係以上述低電阻導電層2之 局部區域為起點向周圍擴大,形成腐蝕反應區域8b。但本 第一實施例之連接電極,因構成僅將低電阻導電層2之短 邊方向中心軸,與開口部5之中心軸隔離一定距離,故腐 蝕反應區域8b要達到對應於開口部5之中心軸之遠方位置 O:\8S\856IO.DOC -13- 463 Γ低電阻導電層2之短邊方向端部需較長時間,在其間低 。且導電層2可維持導通。又於圖% 應發生、盥:r、r / H Μ K瓦 進行之情形比較,低電阻導電層2之電流通 過剖面積減少。因隨著電流通過剖面積之減少,將產生電 :值<增加’為了將電阻值之增加抑制在容許範圍内,低 包阻導包層2亦最好以銘、銅(Cu)等低電阻之金屬材料形 成。含此寺金屬材料所形成之低電阻導電層2,即使因腐姓 反應致電流通過剖面積減少’惟亦可將電阻值維持在實用 上無問題之程度。 本發明之發明人等實際製作圖1⑷、圖1(b)所示構造之 連接電極’就其耐久性進_定。以,關於對開口部5 (中〜軸《还万位置之導電層7之短邊方向端部對應之開 口邵5之端部間之距離,與斷線之產生比例,可產生圖3 之曲線所示相關之_。又圖3係就易產生斷線之條件下 之斷線發生之比例所預測者,f注意有關斷線發生之具體 比例值,與通常條件下之情形未必一致。 具體而言,導電層7之端部與開口部5之端部之距離為5 Am時(對應先前之構造),斷線之連接電極之比例約為 1.7% ’而距離為10/z m時斷線之比例預計減低至約ο;%。 此外,導電層7之端邵與開口部5之端部之距離為16^m 時,在經過一定時間時發生斷線之連接電極之比例預計減O: \ 85 \ 856lODOC 200416463 For those with insulation, any material can be used, but Si02, siNx, etc. are generally used. In FIG. 1 (a), the insulating layer 4 is a single-layer structure, but it is not necessarily limited to this structure, and it may be a multilayer structure using a plurality of insulating materials. Also, the connection electrode of the first embodiment constitutes a distance Wi between one end of the conductive layer 7 and the end of the opening 5 corresponding to the end, which is greater than the other end of the conductive layer 7 and corresponds to the other end. The value of the distance W2 between the ends of the opening 5. Specifically, the planar shape of the conductive layer 7 and the opening 5 are rectangular, and the short-side direction is separated by a certain distance from the central axis toward the horizontal direction, and the distances Wi and W2 between the ends are mutually interactive values. . The width in the short-side direction of the conductive layer 7 and the width of the opening 5 are not particularly limited, and may be the same value as before. The connection electrode of the first embodiment has a structure in which the distances W1 and W2 * between the ends are different from each other, so that the possibility of disconnection due to the corrosion reaction can be reduced. The situation will be described below. As described above, the disconnection of the connection electrode starts from a part of the opening 5 as the corrosion reaction 'gradually spreads to the surrounding area, and finally the corrosion occurs at both ends of the low-resistance conductive layer 2 in the short-side direction. Therefore, the time required for the corrosion reaction to break from the 4th point of the opening $ corresponds to the distance from the starting point of the corrosion reaction to the short-side direction end of the low-resistance conductive layer 2. By lengthening this distance, the occurrence of the break can be suppressed. . However, the internal circuit connected to the external circuit is arranged on the substrate. Since the O: \ 85 \ 856I0 DOC -12-200416463 requires a large area for the internal circuit, it is difficult to build a large area of the connection electrode. On the one hand, in order to prevent the disconnection of the connection electrode, it is necessary to completely suppress the expansion of the corrosion resistance of the low resistance ㈣2, and as long as the expansion of the corrosion reaction to one end is suppressed, the conduction of the low resistance conductive layer 2 can be ensured. Therefore, the first In the embodiment, the central axis of the opening 5 is separated from the central axis of the conductive layer 7 by a certain distance, and the width of the short-side direction of the conductive layer 7 is not changed. The starting point of the corrosion reaction and the end of the short-side direction of the conductive layer 7 are not changed. The distance is maximized. By adopting this structure, the time required for the corrosion reaction generated in a part of the opening portion 5 of the connection electrode of the first embodiment to reach both ends of the low-resistance conductive layer 2 is lengthened, and the occurrence of disconnection can be suppressed. Fig. 2 is a schematic diagram of the reaction expansion pattern of the connection electrode of the first embodiment when the rot reaction occurs. As shown in FIG. 2 (a), a hole is formed in a part of the protective conductive layer 3 under the opening 5, and an acid, a test, etc. are formed on the local area of the low-resistance conductive layer 2 corresponding to the hole to form a rotten name. Reaction area. In addition, in the schematic diagram of FIG. 2 (a), for the sake of easy understanding, an example in which the rot name reaction starts on the central axis in the short side direction of the opening 5 is described. As shown in Fig. 2 (b), the corrosion reaction system expands to the surroundings from the local area of the low-resistance conductive layer 2 as a starting point to form an corrosion reaction area 8b. However, since the connection electrode of the first embodiment constitutes only the central axis in the short-side direction of the low-resistance conductive layer 2 and is separated from the central axis of the opening 5 by a certain distance, the corrosion reaction region 8b must reach the distance corresponding to the opening 5 The distant position of the central axis O: \ 8S \ 856IO.DOC -13- 463 Γ The short-side direction end of the low-resistance conductive layer 2 takes a long time and is low in the meantime. In addition, the conductive layer 2 can maintain conduction. Again in the figure% should occur, compared to the case of r, r / H M K watts, the current of the low-resistance conductive layer 2 is reduced by the cross-sectional area. As the cross-sectional area of the current decreases, the electricity: value < increasing 'In order to suppress the increase of the resistance value within the allowable range, the low-conductance conductive cladding 2 is also preferably as low as Ming, copper (Cu), etc. Resistive metal material is formed. Even if the low-resistance conductive layer 2 formed of the metal material containing this temple is used, the resistance value can be maintained to a practically acceptable level even if the cross-sectional area of the current is reduced due to the reaction of the surname. The inventors of the present invention actually made the connection electrode 'having the structure shown in Figs. 1 (a) and 1 (b), and determined its durability. Therefore, regarding the ratio of the distance between the ends of the openings 5 corresponding to the ends of the openings 5 in the short-side direction of the conductive layer 7 in the middle to the axis of the 10,000-point position, and the broken lines, the curve of FIG. 3 can be generated. The relevant _ is shown. Also, Figure 3 is a predictor of the proportion of disconnection occurrence under the condition that a disconnection is liable to occur. F Note that the specific proportion of the occurrence of disconnection may not be consistent with the situation under normal conditions. In other words, when the distance between the end of the conductive layer 7 and the end of the opening 5 is 5 Am (corresponding to the previous structure), the proportion of the disconnected connection electrode is about 1.7% ', and the distance of the disconnection is 10 / zm. The proportion is expected to be reduced to about ο;%. In addition, when the distance between the end of the conductive layer 7 and the end of the opening 5 is 16 ^ m, the proportion of the connection electrode that is disconnected after a certain period of time is expected to decrease

O\85\85610.DOC -14- 200416463 低至0.5%。故導電層7之端部與開口部5之距離為16// m 時,與先前之構造比較’斷線之連接電極之比例可推測減 低至1/3以下。 如先前導電層7之中心軸與開口部5之中心轴一致之構 造時’為了確保l〇/^m、16//ΓΠ之距離’需要放大導電芦7 之短邊方向見度’或犧牲接觸電阻而縮小開口部5之寬产。 但第一實施例之連接電極,錯開彼此之中心軸即可無需改 變導電層7之短邊方向寬度,減低起因於腐蝕反應之斷線 _ 的發生比例。即第-實施例之連接電極,在不犧牲開口部5 之接觸電阻之情形下’也不致增加基板i上之專有面積。 故第-實施例之連接電極’不會對連接電極之功能及設於 基板i上之内部電路有不良之影響,而且可抑制起因腐蝕 反應之斷線。 乃〜巧侵,黾徑, 僅以-定距離隔離導„ 7之短邊方向中心軸與開口部5 之中心軸此—點與^之構造相異。故製造第-實施例之 連接電極時,例如泌#日目 如r、 /成开1 口邛5〈步驟時使用與先前不同 之光罩圖案即可, 其他裝置寺可沿用先前者。尤其第-實 施例之連接電極,圊 、 、、电θ 〈構造等可與先前同樣之構 ^ ^制設計上負擔之增加。 變導電層7之㈣ …需以蚀刻等改 故即使導電層7之短邊方向寬度更窄O \ 85 \ 85610.DOC -14- 200416463 as low as 0.5%. Therefore, when the distance between the end of the conductive layer 7 and the opening 5 is 16 // m, compared with the previous structure, the proportion of the disconnected connection electrode can be reduced to less than 1/3. For example, when the structure in which the central axis of the conductive layer 7 coincides with the central axis of the opening 5 'in order to ensure a distance of 10 / ^ m, 16 // ΓΠ', it is necessary to enlarge the short side direction visibility of the conductive reed 7 'or sacrifice contact The resistance reduces the wide production of the opening 5. However, the connection electrodes of the first embodiment can be offset from each other's central axis without changing the width of the short-side direction of the conductive layer 7, thereby reducing the proportion of occurrence of disconnections due to the corrosion reaction. That is, the connection electrode of the first embodiment does not increase the exclusive area on the substrate i without sacrificing the contact resistance of the opening 5. Therefore, the connection electrode 'of the first embodiment does not adversely affect the function of the connection electrode and the internal circuit provided on the substrate i, and it can suppress the disconnection due to the corrosion reaction. It is only a clever invasion, a narrow diameter, and only a fixed distance to isolate the central axis of the short side of the guide 7 from the central axis of the opening 5-the point and the structure of ^ are different. Therefore, when manufacturing the connection electrode of the first embodiment For example, ## 日 目 如 r 、 / 成 开 1 口 邛 5 <You can use a different mask pattern from the previous step, and other devices can use the former. Especially the connection electrode of the first embodiment, 圊, 、 、 Electric θ 〈structure and the like can increase the burden on the design of the same structure ^ ^. The variable conductive layer 7 ㈣… needs to be modified by etching, etc. Even if the width of the conductive layer 7 in the short side direction is narrower

O:\85\856IO.DOC -15 - 200416463 足構造時亦容易製造,可— -方面有 &gt; 面萑保開口部5之面積,另 万面有效進行斷線之抑制。 又於第—實施例,絕緣層4 $…、μ 復風導電層7之短邊方向 構造,惟亦可為僅覆 w —Α 、λ 万崎4艾構造,即構成 W尸〇。於第一實施例, 、 叩场#乃因為了避免製造時因 尤卓炙疋位偏移致低電阻導 予兒層2《側面露出,而需使設 汁上有寬裕空間之故。故若 月匕鮮/夭Θ問嗵,不可構成不以 絕緣層4覆蓋另一方端部之構造。 又於第-實施例,形成於導電層7之開口.&quot;為矩形且 僅為一個’惟當可不受該構造之限制。例如亦可如圖4⑷ 所示,對單-低電阻導電層2設複數開口部9a〜9d,使開口 部9a〜9d之形狀為正方形,配置成串聯之構造。即使該構 U,由於使各個開口邵9a〜9d中心軸與低電阻導電層2之 短邊方向中心軸互異,形成開口部9a〜9d,即可抑制因腐蝕 反應足斷線之發生。又亦可如圖4(b)所示,隨機配置開口 邵10a〜10d之構造。該情形時,因各開口部1〇a〜1〇cl分別 具有與低電阻導電層2之短邊方向中心軸互異之中心軸, 故可得與圖1 (a)、圖1(b)所示構造同樣之效果。此外,有 關導電層7之平面形狀,亦可為矩形以外之形狀。此外, 如圖4(c)所示’即使在以整體開口部1〇e之中心軸與低電 阻導電層2之短邊方向中心軸一致的情況時,如區域1 〇f、 O:\85\856lO.DOC -16- 200416463 §奴開口邛1 〇e之主要部分中心轴與低電阻導電層2 〈中心軸互異。又開π # 1Qe之―方端部與對應該端部之 低電阻導電層2之端部間之距離,與另一方端部與對應該 端部之低電阻導電^ 2之端部間之距離互異。故可得與圖 1(a)及圖1(b)之情形同樣之效果。 第二實施例 其次’說明第二實施例之圖像顯示裝置。第二實施例之 圖像-π裝置,具有將第_實施例之連接電極用於電路間 〈連接〈構造。圖5係第二實施例之圖像顯示裝置整體構 造模式圖’圖6係設於構成圖像顯示裝置之陣列基板上之 配線構造,及連接於該配線構造之驅動電路說明用等效電 路圖。以了,請參考圖5及圖6說明第二實施例之圖像^ 丁裝置X以下s及〈薄膜電晶體,因缺乏區別源極與及 極&lt;必要性,故除閘極之2個電極均稱源/汲極。 第二實施例之圖像顯示裝置,具有如圖5所示,包括: 陣列基板11,其係對應顯示像素配置電路元件;及相對基 板12,其係與陣列基板n相對配置;於陣列基板 對基板12間,封人含具有—定配向性之液晶分子之液晶層 13之構造。又於陣列基板u下方配置背光單元14,背光 早7C 14具有對陣列基板n背面輸人面狀行進之白色光之 力月匕万、I1車列基板i!及相對基板12,與液晶層η接觸之O: \ 85 \ 856IO.DOC -15-200416463 It is also easy to manufacture when the foot structure is available, but there are-> surface area to protect the area of the opening 5 and the other surface effectively suppresses the disconnection. Also in the first embodiment, the insulating layer 4 $ ..., μ is a structure of the short-side direction of the wind conductive layer 7, but it can also be a structure that only covers w-A and λ Manzaki 4 Ai, which constitutes W body 0. In the first embodiment, 叩 ## is used to avoid the low resistance due to the shift in the position due to the offset in the manufacturing process. The layer 2 is exposed at the side, which requires ample space on the device. Therefore, if the moon dipper / 夭 Θ asks, it is not possible to construct a structure that does not cover the other end portion with the insulating layer 4. Also in the first embodiment, the opening formed in the conductive layer 7 is rectangular and only one ', but it is not limited by the structure. For example, as shown in FIG. 4 (a), a plurality of openings 9a to 9d may be provided in the single-low-resistance conductive layer 2 so that the shape of the openings 9a to 9d is a square, and the structures are arranged in series. Even with this configuration, since the central axis of each of the openings 9a to 9d and the central axis of the short-side direction of the low-resistance conductive layer 2 are different from each other, and the openings 9a to 9d are formed, it is possible to suppress the occurrence of disconnection due to corrosion reaction. Alternatively, as shown in Fig. 4 (b), a structure in which openings 10a to 10d are randomly arranged. In this case, since each of the openings 10a to 10cl has a central axis that is different from the central axis in the short-side direction of the low-resistance conductive layer 2, it can be obtained from FIG. 1 (a) and FIG. 1 (b). The construction shown has the same effect. The planar shape of the conductive layer 7 may be a shape other than a rectangle. In addition, as shown in FIG. 4 (c), even when the central axis of the entire opening portion 10e coincides with the central axis of the short-side direction of the low-resistance conductive layer 2, such as the area 10f, O: \ 85 \ 856lO.DOC -16- 200416463 § The central axis of the main part of the opening 邛 1 〇e and the low-resistance conductive layer 2 (the central axis are different from each other). Also open π # 1Qe-the distance between the square end and the low-resistance conductive layer 2 corresponding to the end, and the distance between the other end and the low-resistance conductive ^ 2 corresponding to the end Different from each other. Therefore, the same effect as that in the case of Fig. 1 (a) and Fig. 1 (b) can be obtained. Second Embodiment Next, an image display device of a second embodiment will be described. The image-π device of the second embodiment has the structure of using the connection electrode of the first embodiment for inter-circuit connection. Fig. 5 is a schematic diagram of the overall structure of an image display device according to the second embodiment; Fig. 6 is a wiring structure provided on an array substrate constituting the image display device, and an equivalent circuit diagram for explaining a drive circuit connected to the wiring structure. Therefore, please refer to FIG. 5 and FIG. 6 to explain the image of the second embodiment ^ The device X and s and <thin film transistor, due to lack of distinction between the source electrode and the electrode &lt; necessity, so except the gate The electrodes are called source / drain. The image display device of the second embodiment, as shown in FIG. 5, includes: an array substrate 11 configured to correspond to display pixel arrangement circuit elements; and an opposite substrate 12 configured to be disposed opposite to the array substrate n; Between the substrates 12, a structure of a liquid crystal layer 13 containing liquid crystal molecules having a predetermined orientation is sealed. A backlight unit 14 is arranged below the array substrate u. The backlight 7C 14 has the power to input white light to the back of the array substrate n, the I1 train substrate i !, and the opposite substrate 12, and the liquid crystal layer η. Of contact

0\85\856IODOC -17- 200416463 1 3所含液晶 面上分別配置省略圖示之配向膜,規定液晶層 分子之配向性。 又為了對應顯示之圖像圖案控制液晶層13之透光率,於 陣列基板U上配置像素電極,於相對基板12上配置共通 電極。而由控制該像素電極與共通電極間產生之電場強 度,以控制液晶層Π所含液晶分子之配向狀態,調整液晶 層13之透光率。而由^從背光單元14輸人之光通過液晶 層13,將對應透光率之濃淡顯示於相對基板12之外表面 上。又第二實施例之圖像顯示裝置’由於將彩色濾光片15 配置於相對基板12内表面上,故不僅只有顯示濃淡,且可 用R、G、B三色之彩色顯示。 其次,說明配置於陣列基板U上之電路構造。如圖6所 示,於陣列基板11上對應顯示像素配置像素電極 17a〜I7d,又因於像素電極17a〜17d周圍分別形成同樣之電 路構造’故以下况明將像素電極17 a〜17 d總稱為’’像素電極 17,,,配置於陣列基板11上之其他電路元件亦同樣總稱說 明。 於像素電極1 7附近,配置具有開關元件功能之薄膜電晶 體1 8,像素電極17係與薄膜電晶體1 8 —方之源/汲極連 接。又薄膜電晶體1 8之另一方之源/沒極連接於像素電極 17附近位置,以縱方向延伸之信號線19,閘極係連接於像 O:\85\856IO.DOC -18- 200416463 素%極1 7附近位置,以橫方向延伸之掃描線。 而於信號線19、掃描線2〇末端配置連接電極21及連接 電極22。連接電極21及連接電極22具有第一實施例記載 之連接電極構造,纟有抑制因腐蝕反應於信號線19、掃描 、泉20間發生斷線之構造。有關連接電極之具體構造因已於 第一貫施例說明,故於此省略。 又連接電極21與信號線驅動電路23,連接電極22與掃 描線驅動電路24連接。具體之連接狀態一般使用TAB(Tape Automated Bonding) ^ ACF(Anisotropic Conductive Film) &gt; COF(Chip 〇n Film)等。 其次,簡單說明配置於陣列基板丨丨上之電路元件之功 能。像素電極17係於配置在相對基板12上之像素電極之 間產生所需電場之用者。具體而言,像素電極1 7係藉薄膜 電晶體1 8供給對應顯示圖像之電位,使其在與共通電極之 間產生電位差,依該電位差於像素電極1 7與共通電極之間 產生電場。於配置像素電極1 7之陣列基板11與配置共通 %極之相對基板12之間’封入液晶層13,因應電場強度_ 制液晶層13所含液晶分子之配向性,使其可顯示圖像。 信號線19係傳送顯示信號將一定電位供給像素電極17 者。如上述,信號線19係將一端藉連接電極2 1連接於作 號線驅動電路23,將另一端藉薄膜電晶體丨8連接於像素電 O:\85\856IODOC -19- 200416463 極二7。故薄膜電晶體! 8成為驅動狀態時,將來自信號線驅 動電路23之顯示信號傳送給像素電極17,對像素電極^ 供給一定電位。 線20係傳送掃描信號以控制薄膜電晶體a之驅動 =者。如上述’掃描線2〇係將—端藉連接電極22連接 :知撝線驅動電路24’將另一端連接於薄膜電晶體Μ之閘 =故可對薄膜電晶體18傳送從掃描線驅動電路Μ供^ 〈掃描信號,依該掃描信號改變閘極電位,以控制薄^ 晶體1 8之驅動狀態。 兒 土一般於圖像顯示裝置’連接設於陣列基板上之電路構 造,與陣列基板外之驅動電路用之連接電極,具有露出陣 列基板上之構造。故連接電極容易受外氣影響,且容易附 著穢物,與陣列基板上之其他電路構造比較,有容易發生 斷、.泉&lt;問續存在。第二實施例之圖像顯示裝置,由於將連 接電極構成如第-實施例之構造,以防止因腐钮反雇之斷 線,將驅動電路與陣列基板上之電路構造之間維持良好之 導通狀態。由此,與先前比較製品壽命長,而可實現抑制 故障發生之圖像顯示裝置。 又第一實施例之連接電極之利用狀態,不僅可利用於第 二實施例所示構造之圖像顯示裝置’例如亦可利用於平面 切換型(IwSwitching)型之圖像顯示裝置,不僅可 -20啤0 \ 85 \ 856IODOC -17- 200416463 1 Alignment films (not shown) are respectively arranged on the liquid crystal surface of the liquid crystal surface, and the alignment of molecules of the liquid crystal layer is regulated. In order to control the light transmittance of the liquid crystal layer 13 corresponding to the displayed image pattern, a pixel electrode is arranged on the array substrate U, and a common electrode is arranged on the opposite substrate 12. The intensity of the electric field generated between the pixel electrode and the common electrode is controlled to control the alignment state of the liquid crystal molecules contained in the liquid crystal layer Π, and the light transmittance of the liquid crystal layer 13 is adjusted. The light input from the backlight unit 14 passes through the liquid crystal layer 13 to display the intensity of the corresponding light transmittance on the outer surface of the opposite substrate 12. In the image display device of the second embodiment, since the color filter 15 is disposed on the inner surface of the opposite substrate 12, it is possible to display not only the display density, but also R, G, and B colors. Next, a circuit structure arranged on the array substrate U will be described. As shown in FIG. 6, the pixel electrodes 17 a to 17 d are arranged on the array substrate 11 corresponding to the display pixels, and the same circuit structure is formed around the pixel electrodes 17 a to 17 d. Therefore, the pixel electrodes 17 a to 17 d will be collectively referred to below. For the “pixel electrode 17”, other circuit elements arranged on the array substrate 11 are also collectively described. A thin film transistor 18 having a switching element function is arranged near the pixel electrode 17 and the pixel electrode 17 is connected to the square source / drain of the thin film transistor 18. The other source / electrode of the thin film transistor 18 is connected to the position near the pixel electrode 17, and the signal line 19 extends in the longitudinal direction. The gate is connected to an element like O: \ 85 \ 856IO.DOC -18- 200416463 Scanning lines extending in the horizontal direction near the% pole 17. At the ends of the signal line 19 and the scanning line 20, a connection electrode 21 and a connection electrode 22 are arranged. The connection electrode 21 and the connection electrode 22 have the connection electrode structure described in the first embodiment, and have a structure that suppresses the occurrence of a disconnection between the signal line 19, the scan, and the spring 20 due to corrosion. Since the specific structure of the connection electrode has been described in the first embodiment, it is omitted here. The connection electrode 21 is connected to the signal line drive circuit 23, and the connection electrode 22 is connected to the scan line drive circuit 24. For specific connection status, TAB (Tape Automated Bonding) ^ ACF (Anisotropic Conductive Film) & COF (Chip On Film) is generally used. Next, the functions of circuit elements arranged on the array substrate will be briefly described. The pixel electrode 17 is used for generating a required electric field between the pixel electrodes arranged on the opposite substrate 12. Specifically, the pixel electrode 17 supplies a potential corresponding to a displayed image through a thin film transistor 18, so that a potential difference is generated between the pixel electrode 17 and the common electrode, and an electric field is generated between the pixel electrode 17 and the common electrode according to the potential difference. The liquid crystal layer 13 is enclosed between the array substrate 11 on which the pixel electrode 17 is disposed and the opposite substrate 12 on which the common electrode is disposed. The liquid crystal layer 13 is formed in accordance with the electric field intensity and the liquid crystal molecules contained in the liquid crystal layer 13 can be used to display an image. The signal line 19 transmits a display signal and supplies a certain potential to the pixel electrode 17. As described above, the signal line 19 connects one end to the signal line driving circuit 23 through the connection electrode 21, and connects the other end to the pixel circuit through a thin film transistor O: \ 85 \ 856IODOC -19- 200416463 pole II7. So thin film transistors! When the driving state is 8, a display signal from the signal line driving circuit 23 is transmitted to the pixel electrode 17, and a certain potential is supplied to the pixel electrode ^. The line 20 transmits a scanning signal to control the driving of the thin film transistor a. As mentioned above, the 'scanning line 20' is connected by one end via the connection electrode 22: the Zhi line driving circuit 24 'and the other end is connected to the gate of the thin film transistor M = so the thin film transistor 18 can be transmitted from the scanning line driving circuit M Supply a scan signal, and change the gate potential according to the scan signal to control the driving state of the thin crystal 18. The earth is generally connected to an image display device's circuit structure provided on the array substrate, and a connection electrode for a driving circuit outside the array substrate has a structure exposed on the array substrate. Therefore, the connection electrode is easily affected by the outside air, and it is easy to be attached with dirt. Compared with other circuit structures on the array substrate, it is easy to break, and the spring exists. In the image display device of the second embodiment, the connection electrode is configured as in the first embodiment to prevent the disconnection due to the rotten button, and maintain a good conduction between the driving circuit and the circuit structure on the array substrate. status. This makes it possible to realize an image display device that has a longer product life than before and can suppress the occurrence of failures. The use state of the connection electrode of the first embodiment can be used not only for the image display device of the structure shown in the second embodiment, but also for an image display device of the IwSwitching type. 20 beers

0\85\856IODOC 200416463 利用於主動矩陣,亦可利用 万;被動矩陣構造之圖像顯示裝 置。此等圖像顯示裝置均使用信號線及掃描線進行圖像顯 不’以此為共通點’為了與驅動電路連接需具備連接電極。 又任何圖像顯示裝置由於高精細化等需要多數信號線及择 描線,連接電極大型化有„,最好利用第—實施例之連 接電極之故。又即使圖像顯示裝置之外,只要以tab等連 接複數電路者,當可用第—實施例之連接電極。 發明之效果 如以上說明,依本發明,因採用絕緣層覆蓋之導電層上 面寬度為兩端部互異之構造’故開口部至導電層端部之距 離互異,即使萬-開口部之—部分開始腐錢應時,腐姓 反應之進行速度在兩端部附近區域互異,而發揮可抑制導 笔層fe/f線之效果。 又依本發明,由於導電層之短邊方向有關之中心軸,與 開口部之中心軸隔離一定距離之構造,因由絕緣層覆蓋之 導電層部分之寬度互異,故發揮可抑制因腐蝕反應之斷線 之效果。 ’ 又依本發明,由於採以上述構造之連接電極連接陣列基 板上之電路構造與外部電路之圖像顯示裝置,故可抑制連 接部分之斷線之發生,具有可實現製品壽命長之 一0 \ 85 \ 856IODOC 200416463 It is used in the active matrix, but also the image display device of passive matrix structure. These image display devices use a signal line and a scanning line for image display. 'This is a common point.' In order to connect to a driving circuit, a connection electrode is required. Also, any image display device requires a large number of signal lines and trace lines due to high definition and the like, and the connection electrode is large. It is best to use the connection electrode of the first embodiment. Even if the image display device is not used, Those connecting multiple circuits such as tabs can use the connection electrodes of the first embodiment. The effect of the invention is as described above. According to the present invention, the width of the upper surface of the conductive layer covered with the insulating layer is different from the structure of the two ends, so the opening The distances to the ends of the conductive layer are different, even if 10,000-parts of the openings start to rot, the speed of the rot-response reaction is different in the areas near the two ends, which can suppress the fe / f line of the pen layer. According to the present invention, since the central axis related to the short-side direction of the conductive layer is separated from the central axis of the opening by a certain distance, the widths of the conductive layer portions covered by the insulating layer are different from each other, so that the cause can be suppressed. The effect of the disconnection of the corrosion reaction. 'Also according to the present invention, since the connection electrode with the above structure is adopted to connect the circuit structure on the array substrate with the external circuit, the image display device, Inhibit connection portion of the disconnected, having realized a long life of the article

同1 象顯7JT 裝置之效果。Same effect as 1 picture 7JT device.

O:\85\856lODOC -21 - 屬416463 圖式簡單說明 圖,圖1(b)係 又 1⑷係第_實施例之連接電極剖面構造 弟-贫施例有關之連接電極平面構造圖。 圖2(a)、2(b)係第—實施例之連接電極,腐蚀反應進行狀 態模式圖。 圖3係第一貫施例之連接電極斷線比例曲線圖。 圖4(a)至圖4(c)係第一實施例之連接電極不同實施例平 面圖。 圖5係第二實施例之圖像顯示装置構造模式圖。 圖6係第二實施例之圖像顯示装置構成之陣列基板上之 電路構造等效電路圖。 圖7係先前之連接電極構造模式圖。 元件符號之說明 1 基板 2 低電阻導電層 3 保護導電層 4 絕緣層 5 開口部 6 表面導電層 7a〜7d、9a〜9d、l〇a〜l〇e 開口部 8a、8b 腐蚀反應區 Q\85\856lO.DOC -22- 200416463 lOf、 lOg 區域 11 陣列基板 12 相對基板 13 液晶層 14 背光單元 15 彩色濾光片 17a 像素電極 17 像素電極 18 薄膜電晶體 19 信號線 20 掃描線 21、 22 連接電極 23 信號線驅動電路 24 掃描線驅動電路 101 基板 102 低電阻導電層 103 保護導電層 104 絕緣層 105 開口部 106 表面導電層 O:\85\85610.DOC -23 -O: \ 85 \ 856lODOC -21-belongs to 416463. Brief description of the drawings, Fig. 1 (b) and 1 (a) are the cross-sectional structure of the connecting electrode of the first embodiment. Figures 2 (a) and 2 (b) are schematic diagrams showing the progress of the corrosion reaction of the connection electrode of the first embodiment. FIG. 3 is a proportion curve diagram of disconnection of a connection electrode in the first embodiment. 4 (a) to 4 (c) are plan views of different embodiments of the connection electrode of the first embodiment. FIG. 5 is a schematic diagram showing a structure of an image display device according to a second embodiment. Fig. 6 is an equivalent circuit diagram of a circuit structure on an array substrate constituted by an image display device of a second embodiment. FIG. 7 is a schematic diagram of a structure of a previous connection electrode. Explanation of component symbols 1 Substrate 2 Low-resistance conductive layer 3 Protective conductive layer 4 Insulating layer 5 Opening portion 6 Surface conductive layer 7a to 7d, 9a to 9d, 10a to 10e Opening portion 8a, 8b Corrosion reaction zone Q \ 85 \ 856lO.DOC -22- 200416463 lOf, lOg area 11 Array substrate 12 Opposite substrate 13 Liquid crystal layer 14 Backlight unit 15 Color filter 17a Pixel electrode 17 Pixel electrode 18 Thin film transistor 19 Signal line 20 Scan line 21, 22 Connection Electrode 23 Signal line drive circuit 24 Scan line drive circuit 101 Substrate 102 Low-resistance conductive layer 103 Protective conductive layer 104 Insulating layer 105 Opening 106 Surface conductive layer O: \ 85 \ 85610.DOC -23-

Claims (1)

200416463 拾、申請專利範園: 1 · 一種連接電極,其係具有開口部,該開口部由覆蓋在部 分導電層上面之絕緣層所區隔,該連接電極係使用於連 接外部電路之連接構件, 其特欲在於:上述導電層上面之一方端部與對應該端 邵之上述開口部端部間之距離,比上述導電層上面之另一 万端部與對應該另一方端部之上述開口部端部間之距離 有更大之數值。 •如申請專利範圍第1項之連接電極,其中關於上述導電 層之短邊方向中心軸與上述開口部中心軸,於水平方向 隔開一定距離。 3 ·如申凊專利範圍第1或2項之連接電極,其中上述導電 層表面之一方端部與對應該端部之上述開口部端部間之 距離為10# m以上。 4_如申請專利範圍第1或2項之連接電極,其中上述導電 層係含依序疊置低電阻層,與保護該低電阻層之保護導 電層之多層構造形成。 5·如申請專利範圍第1或2項之連接電極,其中於上述導 笔層及上述絕緣層上面,更配置表面導電層。 6·如申請專利範圍第1或2項之連接電極,其中上述開口 邵係以複數個形成於上述導電層上面。 7· 一種圖像顯示裝置,其特徵為具有陣列基板,其係包括: 像素電極,對應顯示像素配置者; 開關元件,對應該像素電極配置者; O:\85\856lODOC 200416463 信號線,藉該開關元件將顯示信號供給上述像素電極 者; 〜 掃描線,供給控制上述開關元件之驅動狀態之掃脖 號者;及 π連接電極’其係如,請專利範圍第】,頁,連接上述信 號線及/或上述掃描線與外部驅動電路者。 8. 如申請專利範圍第7項之圖像顯示裝置,其中更具有: 外部驅動電路,其係藉上述連接電極連接者;〃. 相對基板,其係相對於上述陣列基板配置者;及 液晶層,其係封入上述陣列基板與上述相對基板之間 者。 9. 如申請專利範圍第7&lt;8項之圖像顯示裝置,其中更具 有背光光源,其係供給透過上述液晶層内之光者。/ O:\85\856lODOC200416463 Patent application park: 1 · A connection electrode having an opening portion separated by an insulating layer covering a part of the conductive layer. The connection electrode is used as a connection member for connecting an external circuit. The special purpose is that the distance between one of the upper end of the conductive layer and the end of the opening corresponding to the end is greater than the other ten thousand end of the conductive layer and the opening of the other end. The distance between the ends has a larger value. • The connection electrode of item 1 in the scope of patent application, wherein the central axis of the short side direction of the conductive layer and the central axis of the opening portion are spaced a certain distance in the horizontal direction. 3. The connection electrode according to item 1 or 2 of the patent application, wherein the distance between one end of the surface of the conductive layer and the end of the opening corresponding to the end is 10 # m or more. 4_ The connection electrode according to item 1 or 2 of the scope of patent application, wherein the conductive layer is formed by a multilayer structure in which a low-resistance layer is sequentially stacked and a protective conductive layer protecting the low-resistance layer. 5. The connection electrode according to item 1 or 2 of the scope of patent application, wherein a surface conductive layer is further arranged on the above pen layer and the above insulating layer. 6. The connection electrode according to item 1 or 2 of the patent application range, wherein the openings are formed on the conductive layer by a plurality of openings. 7. An image display device, characterized by having an array substrate, comprising: a pixel electrode corresponding to a display pixel arrangement; a switching element corresponding to a pixel electrode arrangement; O: \ 85 \ 856lODOC 200416463 signal line, borrowing this The switching element supplies a display signal to the above pixel electrode; a scanning line to supply a sweeper that controls the driving state of the above switching element; and a π connection electrode, such as, for example, the scope of a patent, page, connects the above signal line And / or the scan line and an external driving circuit. 8. The image display device according to item 7 of the patent application scope, further comprising: an external driving circuit connected by the above-mentioned connection electrode; 〃. An opposite substrate, which is arranged relative to the above-mentioned array substrate; and a liquid crystal layer , Which is enclosed between the array substrate and the opposite substrate. 9. If the image display device of the scope of application for item No. 7 &lt; 8 further includes a backlight light source, which supplies light transmitted through the liquid crystal layer. / O: \ 85 \ 856lODOC
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