TW200414795A - Image display device, manufacturing method of spacer used for image display device and image display device equipped with spacer manufactured by this method - Google Patents

Image display device, manufacturing method of spacer used for image display device and image display device equipped with spacer manufactured by this method Download PDF

Info

Publication number
TW200414795A
TW200414795A TW092126511A TW92126511A TW200414795A TW 200414795 A TW200414795 A TW 200414795A TW 092126511 A TW092126511 A TW 092126511A TW 92126511 A TW92126511 A TW 92126511A TW 200414795 A TW200414795 A TW 200414795A
Authority
TW
Taiwan
Prior art keywords
spacer
substrate
image display
display device
manufacturing
Prior art date
Application number
TW092126511A
Other languages
Chinese (zh)
Other versions
TWI241147B (en
Inventor
Satoko Oyaizu
Masaru Nikaido
Shigeo Takenaka
Satoshi Ishikawa
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of TW200414795A publication Critical patent/TW200414795A/en
Application granted granted Critical
Publication of TWI241147B publication Critical patent/TWI241147B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes
    • H01J31/08Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/028Mounting or supporting arrangements for flat panel cathode ray tubes, e.g. spacers particularly relating to electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes
    • H01J31/08Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123Flat display tubes
    • H01J31/125Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/18Assembling together the component parts of electrode systems
    • H01J9/185Assembling together the component parts of electrode systems of flat panel display devices, e.g. by using spacers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels
    • H01J2329/86Vessels
    • H01J2329/8625Spacing members
    • H01J2329/864Spacing members characterised by the material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels
    • H01J2329/86Vessels
    • H01J2329/8625Spacing members
    • H01J2329/865Connection of the spacing members to the substrates or electrodes
    • H01J2329/8655Conductive or resistive layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Abstract

There are provided: A first substrate (10) having a phosphor screen, and a second substrate arranged in opposition to the first substrate with a gap and with a plurality of electron sources (18) fitted, and a plurality of spacers (30a), (30b) are fitted for supporting an atmospheric pressure load acting on the substrates. A tip part at the first substrate side and a tip part at the second substrate side of each spacer is impregnated with a conductive material, and each forms a conductivity-imparting part (31a), (31b).

Description

200414795 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於具有相對配置的基板;及配設在一基板 的內面之多數的電子源的影像顯示裝置、此影像顯示裝置 使用之間隔物之製造方法、以及具備上述製造方法所製造 間隔物的影像顯示裝置。200414795 (1) 发明 Description of the invention [Technical field to which the invention belongs] The present invention relates to a substrate having a relative arrangement; and an image display device having a plurality of electron sources arranged on the inner surface of the substrate, and the image display device used by the image display device. A method for manufacturing a spacer, and an image display device including the spacer manufactured by the above-mentioned manufacturing method.

【先前技術】 近年來,高畫質廣播用或者伴隨此之高解析度影像顯 示裝置爲所期望,關於該螢幕顯示性能,則迫切期望更嚴 苛之性能。爲了達成這些期望,需要螢幕面的平坦化、高 解析度化,同時,也需要謀求輕量、薄型化。[Prior Art] In recent years, high-definition image display devices for high-definition broadcasting or the like have been desired, and more severe performance is urgently demanded regarding the screen display performance. To meet these expectations, it is necessary to flatten the screen surface and increase the resolution. At the same time, it is necessary to reduce the weight and thickness of the screen.

滿足上述期望的影像顯示裝置,例如場致發射顯示器 (以下,稱爲FED )等平面顯示裝置受到矚目。此FED 係具有保持特定間隙而相對配置的第丨基板以及第2基板 。這些基板係其外緣部彼此間直接或者透過矩形框狀的側 壁而相互接合而構成真空外圍器。在第1基板的內面形成 進行影像顯示用的螢光體層,在第2基板的內面設置作爲 激勵螢光體層以使發光之電子源的多數電子放射元件。 爲了支持施加在第1基板以及第2基板的大氣壓負載 ,在這些基板之間,配置作爲支持構件的多數間隔物。在 此FED中,於顯示影像時,在螢光體層施加陽極電壓, 藉由陽極電壓以使由電子放射元件所放射的電子束加速, 以衝擊於螢光體層,藉此,螢光體發光以顯示影像。 -5- (2) 200414795 在此種FED中,電子放射元件的大小係微米級,可 將第1基板和第2基板的間隔設定爲微米級。因此,在 FED中,與當作現在的電視或電腦的顯示器使用的陰極射 線管(C R T )比較,可以達成影像顯示裝置的高解析度化 、輕量化、薄型化。Flat panel display devices such as field emission displays (hereinafter referred to as FED) that meet the above-mentioned expectations have attracted attention. This FED has a first substrate and a second substrate which are arranged oppositely while maintaining a specific gap. These substrates are connected to each other directly or through rectangular frame-shaped side walls to form a vacuum peripheral. A phosphor layer for image display is formed on the inner surface of the first substrate, and most electron emitting elements are provided on the inner surface of the second substrate as an electron source that excites the phosphor layer to emit light. In order to support the atmospheric pressure load applied to the first substrate and the second substrate, a plurality of spacers serving as a supporting member are arranged between the substrates. In this FED, when an image is displayed, an anode voltage is applied to the phosphor layer, and the anode voltage is used to accelerate the electron beam emitted from the electron emitting element to impinge on the phosphor layer, whereby the phosphor emits light to Display the image. -5- (2) 200414795 In this type of FED, the size of the electron emitting element is in the micron order, and the distance between the first substrate and the second substrate can be set in the micron order. Therefore, compared with a cathode ray tube (C R T) used as a display of a current television or computer in FED, it is possible to achieve higher resolution, lighter weight, and thinner image display devices.

在上述的影像顯示裝置中,爲了獲得實用的顯示特性 ’期望使用與通常的陰極射線管同樣的螢光體,且將陽極 電壓設定在數kV以上。但是,第1基板和第2基板間的 間隙,由於解析度或者支持構件的特性、製造性等觀點而 言,無法做得太大,需要設定在1〜3 mm之程度。因此, 由第2基板所放射的電子在衝擊於形成在第1基板的螢光 面時,2次電子以及反射電子被放射出,這些2次電子、 反射電子與配設在基板間的間隔物衝擊。其結果爲,間隔 物帶電。一般在FED的加速電壓中,間隔物帶正電,由 電子放射元件所放射的電子束被引往間隔物,而偏離本來 的軌道。其結果爲,對於螢光體層,產生電子束的錯誤著 陸,而有顯示影像的色純度劣化問題。 爲了降低由於此種間隔物所致的電子束之吸引,可以 考慮在間隔物表面的全部或者一部份施以導電處理,以避 免帶電。例如,在美國專利第5,726,529號詳細說明書中 ,揭示有在絕緣間隔物的第2基板側端部施以導電性處理 ,以避免間隔物帶電的構造。 但是,在間隔物施以導電性處理時,透過間隔物而由 第1基板流往第2基板的無效電流增加,引起溫度上升或 -6 - (3) 200414795 消耗電力的增加。另外,在習知的導電性處理方法中,難 於避免製造成本的增加。 【發明內容】 發明揭示In the video display device described above, in order to obtain practical display characteristics, it is desirable to use a phosphor similar to that of a normal cathode ray tube, and to set the anode voltage to several kV or more. However, the gap between the first substrate and the second substrate cannot be made too large due to the resolution, the characteristics of the supporting member, and the manufacturability, and it needs to be set to about 1 to 3 mm. Therefore, when the electrons emitted from the second substrate impinge on the fluorescent surface formed on the first substrate, secondary electrons and reflected electrons are emitted. These secondary electrons, reflected electrons, and the spacer disposed between the substrates are emitted. Shock. As a result, the spacer is charged. Generally, in the acceleration voltage of the FED, the spacer is positively charged, and the electron beam emitted by the electron emitting element is directed to the spacer and deviates from its original orbit. As a result, erroneous landing of the electron beam occurs in the phosphor layer, and there is a problem that the color purity of a displayed image is deteriorated. In order to reduce the attraction of the electron beam due to such a spacer, it may be considered to conduct a conductive treatment on all or a part of the surface of the spacer to avoid electrification. For example, in the detailed description of US Patent No. 5,726,529, there is disclosed a structure in which a conductive treatment is applied to a second substrate-side end portion of an insulating spacer to prevent the spacer from being charged. However, when the spacer is subjected to a conductive treatment, the reactive current flowing from the first substrate to the second substrate through the spacer increases, which causes a temperature rise or an increase in power consumption of -6-(3) 200414795. In addition, in the conventional conductive processing method, it is difficult to avoid an increase in manufacturing cost. [Summary of the Invention]

本發明係有鑑於以上各點而完成者,其目的在於提供 •防止電子束的軌道偏離’影像品質提升的影像顯示裝置 、此影像顯示裝置使用之間隔物之製造方法、以及具備上 述製造方法所製造之間隔物的影像顯示裝置。The present invention has been made in view of the foregoing points, and an object thereof is to provide an image display device that prevents the orbit of an electron beam from deviating from the “improved image quality”, a method of manufacturing a spacer used in the image display device, and Image display device for manufactured spacers.

爲了達成上述目的,關於本發明之形態的影像顯示裝 置,係具備:具有螢光面的第1基板;及與上述第1基板 保有間隙而相對配置,同時,設置放射電子以激勵上述螢 光面的多數電子源之第2基板;及個別以絕緣材料形成, 同時,配設在上述第1基板以及第2基板間,以支持作用 在第1以及第2基板的大氣壓負載之多數間隔物,上述各 間隔物的上述第1基板側的前端部以及第2基板側的前端 部,係含浸導電性材料,分別形成導電性賦予部。 如依據上述構造的影像顯示裝置,由位於間隔物附近 的電子源所放射的電子,藉由位於間隔物的兩端部之導電 性賦予部所形成的電場而被排斥,在離開間隔物之方向取 得軌道後,此次被間隔物所吸引,電子之軌道偏離相互抵 消,由電子源所放射的電子最終到達影像顯示面的目標位 置。藉此,降低起因於電子之錯誤著陸之色純度劣化,可 以獲得影像品質提升的影像顯不裝置。另外,與使間隔物 (4) 200414795 全體具有導電性相比,可以抑制溫度上升或消耗電力的增 加。In order to achieve the above object, an image display device according to an aspect of the present invention includes: a first substrate having a fluorescent surface; and a first substrate having a gap therebetween and disposed opposite to each other, and emitting electrons to excite the fluorescent surface. The second substrate of most of the electron sources; and an individual material formed of an insulating material, and arranged between the first substrate and the second substrate to support most of the spacers acting on the atmospheric pressure load of the first and second substrates. The front-end | tip part of the said 1st board | substrate side and the front-end | tip part of a 2nd board | substrate side of each spacer are impregnated with a conductive material, and respectively formed the conductive provision part. According to the image display device having the above structure, the electrons emitted from the electron source located near the spacer are repelled by the electric field formed by the conductivity imparting portions located at both ends of the spacer, and move away from the spacer. After obtaining the orbits, this time they are attracted by the spacers, the orbital deviations of the electrons cancel each other out, and the electrons emitted by the electron source finally reach the target position on the image display surface. Thereby, the degradation of color purity due to the erroneous landing of electrons is reduced, and an image display device with improved image quality can be obtained. In addition, it is possible to suppress an increase in temperature or an increase in power consumption as compared to making the spacer (4) 200414795 conductive as a whole.

關於本發明之其他形態的影像顯示裝置之間隔物之製 造方法,係藉由絕緣材料形成間隔物,在上述形成之間隔 物的前端部附著含具有導電性成分之導電糊或者溶液,藉 由毛細管現象,使上述間隔物的前端部內浸染上述導電糊 或溶液,燒成浸染上述導電糊或溶液之間隔物,形成前端 部具有含浸導電性材料之導電性賦予部的間隔物。 另外,關於本發明之其他形態的間隔物之製造方法, 係藉由絕緣材料形成間隔物,在上述形成的間隔物之前端 部附著含具有導電性成分的導電糊,加熱處理附著上述導 電糊的間隔物,使具有導電性成分熱擴散於間隔物的前端 部內,形成前端部具有含浸導電性材料之導電性賦予部的 間隔物。Regarding the method for manufacturing a spacer of an image display device according to another aspect of the present invention, a spacer is formed by an insulating material, and a conductive paste or a solution containing a conductive component is attached to a front end portion of the formed spacer, and a capillary tube is used. The phenomenon is that the conductive paste or solution is impregnated into the front end portion of the spacer, and the spacer impregnated with the conductive paste or solution is fired to form a spacer having a conductivity imparting portion impregnated with a conductive material at the front end portion. In addition, in the method for manufacturing a spacer of another aspect of the present invention, the spacer is formed of an insulating material, and a conductive paste containing a conductive component is adhered to the front end of the formed spacer. The spacer heat-diffuses a conductive component in the front end portion of the spacer to form a spacer having a front end portion having a conductivity-imparting portion impregnated with a conductive material.

本發明之另外其他形態的間隔物之製造方法,係準備 具有形成間隔物用的多數通孔的模具,將不含具有導電性 成分的第1糊漿注入上述通孔,將分散有具有導電性成分 之第2導電糊與上述第1糊漿重疊注入上述通孔,加熱處 理上述第1以及第2糊漿,形成前端部具有分散了具有導 電性成分之導電性賦予部的間隔物。 【實施方式】 以下,一面參考圖面,一面詳細說明將本發明適用於 作爲平面型影像顯不裝置之FED的一種的SED之實施形 -8- (5) 200414795 熊。 >〇>、A method for manufacturing a spacer according to another aspect of the present invention is to prepare a mold having a plurality of through holes for forming a spacer, inject a first paste containing no conductive component into the through holes, and disperse the conductive material. The second conductive paste of the component is superimposed on the first paste and injected into the through hole, and the first and second pastes are heat-treated to form a spacer having a tip portion having a conductive imparting portion having a conductive component dispersed therein. [Embodiment] Hereinafter, an embodiment of an SED in which the present invention is applied to a FED as a flat-type image display device will be described in detail with reference to the drawings. (8) 200414795 > 〇 >,

如第1圖至第3圖所示班,此SED係分別具有由矩 形狀的玻璃形成的第1基板1 〇以及第2基板1 2以作爲透 明絕緣基板,這些基板係留有約1 . 0〜2.0mm之間隙而相 對配置。第2基板1 2係形成爲比第2基板1 2稍微大些之 尺寸。第1基板1 〇以及第2基板1 2係透過由玻璃形成之 矩形框狀的側壁1 4,外緣部彼此間相互接合,內部構成 維持真空的扁平之矩形狀的真空外圍器1 5。 在第1基板10的內面形成螢光體螢幕16以作爲螢光 面。螢光體螢幕1 6係排列藉由電子衝擊而發出紅、綠、 藍光的螢光體層R、G、B、以及黑色遮光層11而構成。 螢光體層R、G、B係形成爲條紋狀或者點狀。在螢光體 螢幕16上形成由鋁等形成之金屬背板17。在第1基板1〇 和螢光體螢幕1 6之間,例如也可以設置由ITO等形成之 透明導電膜或者彩色濾色器膜。As shown in Figs. 1 to 3, this SED system has a first substrate 10 and a second substrate 12 formed of rectangular glass, respectively, as transparent insulating substrates, and these substrates have about 1.0 ~ Relatively arranged with a gap of 2.0mm. The second substrate 12 is formed to be slightly larger than the second substrate 12. The first substrate 10 and the second substrate 12 pass through the rectangular frame-shaped side walls 14 formed of glass, the outer edge portions are joined to each other, and the interior forms a flat rectangular vacuum peripheral 15 that maintains a vacuum. A phosphor screen 16 is formed on the inner surface of the first substrate 10 as a phosphor surface. The phosphor screen 16 is configured by arranging phosphor layers R, G, and B, and a black light-shielding layer 11 that emit red, green, and blue light by electron impact. The phosphor layers R, G, and B are formed in stripes or dots. A metal back plate 17 made of aluminum or the like is formed on the phosphor screen 16. A transparent conductive film or a color filter film made of, for example, ITO or the like may be provided between the first substrate 10 and the phosphor screen 16.

作爲激勵螢光體螢幕16的螢光體層R、G、B之電子 源,在第2基板1 2的內面設置分別放射電子束之多數的 表面傳導型電子放射元件1 8。這些電子放射元件1 8係對 應每一畫素而排列爲多數列以及多數行。各電子放射元件 1 8係以未圖示出的電子放射部、在此電子放射部施加電 壓的一對之元件電極等構成。在第2基板12的內面上, 以矩陣狀設置對於電子放射元件1 8供給電位的多數條之 配線2 1,其端部係被引出於真空外圍器1 5的外部。 作用爲接合構件的側壁1 4例如藉由低融點玻璃、低 -9- (6) 200414795 融點金屬等密封材2 0,被密封在第1基板1 〇的外緣部以 及第2基板1 2的外緣部,以接合第1基板以及第2基板 如第2圖以及第3圖所示般,S E D係具備配設在第1 基板1 〇以及第2基板1 2間的間隔物組合22。在本實施 形態中’間隔物組合22係具備:板狀的骨架24 ;及在骨 架的兩面立設爲一體之多數的柱狀間隔物。As an electron source for exciting the phosphor layers R, G, and B of the phosphor screen 16, a surface-conduction electron emission element 18 for emitting a large number of electron beams is provided on the inner surface of the second substrate 12 respectively. These electron emitting elements 18 are arranged in a plurality of columns and a plurality of rows in accordance with each pixel. Each electron emitting element 18 is constituted by an electron emitting portion (not shown), a pair of element electrodes to which a voltage is applied to the electron emitting portion, and the like. On the inner surface of the second substrate 12, a plurality of wirings 21, which supply potential to the electron emitting elements 18, are arranged in a matrix, and the ends thereof are led out of the vacuum peripheral 15. The side wall 14 serving as a joining member is sealed to the outer edge portion of the first substrate 10 and the second substrate 1 with a sealing material 20 such as low melting point glass, low -9- (6) 200414795 melting point metal, and the like. As shown in FIGS. 2 and 3, the outer edge portion of 2 is used to join the first substrate and the second substrate. The SED system includes a spacer combination 22 disposed between the first substrate 10 and the second substrate 12. . In this embodiment, the 'spacer combination 22' includes: a plate-shaped skeleton 24; and a plurality of columnar spacers integrally standing on both sides of the bone frame.

如加以s羊述時’骨架2 4係具有與第1基板1 〇的內面 相對的第1表面2 4 a以及與第2基板1 2的內面相對的第 2表面24b,與這些基板平行地配置。在骨架24藉由鈾刻 等形成多數的電子束通過孔2 6以及多數的間隔物開孔2 8 。電子束通過孔2 6係分別與電子放射元件1 8相對排列, 令由電子放射元件所放射的電子束通過。間隔物開孔2 8 係分別位於電子束通過孔2 6間,以特定的間隔排列。As described above, the 'skeleton 2 4 system has a first surface 2 4 a opposite to the inner surface of the first substrate 10 and a second surface 24 b opposite to the inner surface of the second substrate 12, parallel to these substrates.地 Configuration. A majority of electron beams are formed in the skeleton 24 by uranium etching or the like through holes 26 and a plurality of spacers 2 8 are opened. The electron beam passing holes 26 are arranged opposite to the electron emitting elements 18, respectively, and pass the electron beams emitted by the electron emitting elements. The spacer openings 2 8 are respectively located between the electron beam passing holes 2 6 and are arranged at specific intervals.

骨架24例如係藉由鐵-鎳系之金屬板而形成爲厚度 0·1〜0.25mm。在骨架24的表面形成由構成金屬板之元素 所形成的氧化膜,例如,由Fe304、NiFe204所形成之氧 化膜。在骨架24的至少第2基板側的表面形成高電阻膜 。高電阻膜係藉由將由玻璃、陶瓷等形成的高電阻物質塗 佈在骨架表面,予以燒成而形成。高電阻膜之電阻係設定 在Ε + 8 Ω /□以上。 電子束通過孔 26 例如係形成爲 0.15〜 0.25mmX0.15〜〇.25mm之矩形狀,間隔物開孔28例如形 成爲直徑約0 · 2〜0.5 mm之圓形。上述之高電阻膜也形成 -10- (7) 200414795 在限定電子束通過孔26之壁面。The skeleton 24 is formed, for example, from an iron-nickel metal plate to a thickness of 0.1 to 0.25 mm. On the surface of the skeleton 24, an oxide film made of elements constituting a metal plate, such as an oxide film made of Fe304 and NiFe204, is formed. A high-resistance film is formed on a surface of at least the second substrate side of the skeleton 24. A high-resistance film is formed by coating a surface of a skeleton with a high-resistance substance made of glass, ceramics, or the like and firing it. The resistance of the high-resistance film is set above Ε + 8 Ω / □. The electron beam passing hole 26 is, for example, formed in a rectangular shape of 0.15 to 0.25 mm × 0.15 to 0.25 mm, and the spacer opening 28 is formed in a circular shape with a diameter of about 0.2 mm to 0.5 mm, for example. The above-mentioned high-resistance film is also formed -10- (7) 200414795 on the wall surface defining the electron beam passage hole 26.

在骨架24的第1表面24a上,與各間隔物開孔28重 疊而立設第1間隔物3 0a成爲一體。第1間隔物3 0a的延 伸端係透過金屬背層1 7以及螢光體螢幕1 6的黑色遮光層 1 1而與第1基板10的內面抵接。在骨架24的第2表面 24b上,與各間隔物開孔28重疊而立設第2間隔物30b 成爲一體,其延伸端係與第2基板1 2的內面抵接。各第 2間隔物3 Ob的延伸端係位於設置在第2基板1 2的內面 上的配線2 1上。 第1以及第2間隔物30a、30b係藉由絕緣材料形成 。第1間隔物3 0a的前端部以及第2間隔物3 Ob的前端部 係分別構成含浸導電性材料之導電性賦予部3 1 a、3 1 b。 在各導電性賦予部3 1 a、3 1 b中,導電性材料的含有濃度 係由間隔物的前端往中間部,即往骨架24側逐漸減少。On the first surface 24a of the frame 24, the first spacer 30a is formed by being overlapped with each of the spacer openings 28 to form a single body. The extended end of the first spacer 30a is in contact with the inner surface of the first substrate 10 through the metal back layer 17 and the black light shielding layer 11 of the phosphor screen 16. On the second surface 24b of the frame 24, second spacers 30b are integrally formed by overlapping the respective spacer openings 28, and the extended ends thereof abut against the inner surface of the second substrate 12. The extended end of each second spacer 3 Ob is located on the wiring 21 provided on the inner surface of the second substrate 12. The first and second spacers 30a and 30b are formed of an insulating material. The front end portion of the first spacer 3 0a and the front end portion of the second spacer 3 Ob constitute the conductivity-imparting portions 3 1 a and 3 1 b impregnated with a conductive material, respectively. In each of the conductivity-imparting portions 3 1 a and 3 1 b, the content of the conductive material is gradually decreased from the front end of the spacer to the middle portion, that is, toward the skeleton 24 side.

如後述般,導電性賦予部3 1 a、3 1 b形成使由電子放 射元件1 8放射出的電子束往離開第1以及第2間隔物 3 0a、30b之方向排斥的電場。各導電性賦予部31a、3 lb 所含有的導電性材料例如可以使用Ni、In、Ag、Au、Pt 、Ir、Ru、W等。導電性賦予部31a、31b的高度,以及 導電性材料的含有濃度係考慮給予電子束的排斥力,即電 子束的軌道補正量而任意設定。 第1以及第2間隔物30a、30b之各個係形成爲由骨 架24側往延伸端,即往前端而直徑變小的前端細推拔狀 。例如’各第1間隔物3 0a之位於骨架24側的基端之直 -11 - (8) 200414795 徑約0.4mm,前端之直徑約〇.3mm,高度約〇.6mm。各第 2間隔物30b之位於骨架24側的基端直徑約〇.4mm,前 端直經約0 · 2 5 m m,高度約0 · 8 m m。如此,第1間隔物 3 〇 a的高度形成爲比第2間隔物3 0 b的高度低。 第1間隔物3 0 a以及第2間隔物3 0 b的表面電阻爲 5 X 1 0 13 Ω。各間隔物開孔2 8、第1以及第2間隔物3 0 a、As described later, the conductivity applying portions 3 1 a and 3 1 b form an electric field that repels the electron beams emitted from the electron emission elements 18 in a direction away from the first and second spacers 30a and 30b. As the conductive material contained in each of the conductive imparting portions 31 a and 3 lb, for example, Ni, In, Ag, Au, Pt, Ir, Ru, W, or the like can be used. The height of the conductivity-imparting portions 31a and 31b and the content concentration of the conductive material are arbitrarily set in consideration of the repulsive force given to the electron beam, that is, the amount of orbital correction of the electron beam. Each of the first and second spacers 30a and 30b is formed in a finely pushed shape from the bone frame 24 side to the extended end, that is, toward the front end and the diameter becomes smaller. For example, the straightness of the base end of each of the first spacers 30a located on the side of the skeleton 24 is -11-(2004) 79514 with a diameter of about 0.4mm, a diameter of the front end of about 0.3mm, and a height of about 0.6mm. The diameter of the base end of each of the second spacers 30b on the side of the skeleton 24 is approximately 0.4 mm, the front end is approximately 0.2 mm in length, and the height is approximately 0.8 mm. In this way, the height of the first spacer 30 a is lower than the height of the second spacer 30 b. The surface resistances of the first spacer 3 0 a and the second spacer 3 0 b were 5 X 1 0 13 Ω. Each spacer opening 28, the first and second spacers 3 0a,

3 〇b係相互整齊排列,第1以及第2間隔物係介由此間隔 物開孔2 8而互相連結爲一體。藉此,第1以及第2間隔 物30a、30b係在由兩面夾住骨架24之狀態下,與骨架 24形成爲一體。 如上述般構成的間隔物組合22係配設在第1基板i 〇 以及第2基板1 2間。第1以及第2間隔物3 0 a、3 0 b藉由 抵接在第1基板1 0以及第2基板12的內面,可支持作用 於這些基板的大氣壓負載,而將基板間的間隔維持在特定 値。30b is aligned with each other, and the first and second spacers are connected to each other through the spacer openings 28. Thereby, the first and second spacers 30a and 30b are integrated with the skeleton 24 in a state in which the skeleton 24 is sandwiched by both sides. The spacer assembly 22 configured as described above is disposed between the first substrate i 0 and the second substrate 12. The first and second spacers 3 0 a and 3 0 b can support the atmospheric pressure load acting on these substrates by abutting on the inner surfaces of the first substrate 10 and the second substrate 12 while maintaining the interval between the substrates. On a specific tweet.

如第2圖所示般,SED係具備在骨架24以及第1基 板1 〇的金屬背板1 7施加電壓而未圖示出的電壓供給部。 此電壓供給部係分別連接於骨架24以及金屬背板丨7,例 如,在骨架24施加12kV、在金屬背板17施加12kV以下 的電壓。施加於骨架24的電壓係設定爲與施加於第1基 板1 〇的電壓相同,或者比其高。 在此S ED中,於顯示影像時,在螢光體螢幕1 6以及 金屬背板17施加陽極電壓,耢由陽極電壓以加速由電子 放射元件1 8所放射的電子束B,以衝擊螢光體螢幕} 6。 -12- (9) 200414795 藉此’螢光體螢幕16的螢光體層被激勵而發光,可顯示 影像。As shown in Fig. 2, the SED system includes a voltage supply unit (not shown) that applies a voltage to the frame 24 and the metal back plate 17 of the first substrate 10. This voltage supply unit is connected to the frame 24 and the metal back plate 7 respectively. For example, a voltage of 12 kV is applied to the frame 24 and a voltage of 12 kV or less is applied to the metal back plate 17. The voltage applied to the frame 24 is set to be the same as or higher than the voltage applied to the first substrate 10. In this S ED, when an image is displayed, an anode voltage is applied to the phosphor screen 16 and the metal back plate 17, and the anode voltage is used to accelerate the electron beam B emitted by the electron emitting element 18 to impact the fluorescent light. Body screen} 6. -12- (9) 200414795 In this way, the phosphor layer of the phosphor screen 16 is excited to emit light, and an image can be displayed.

接著,說明如上述般構成的S E D之製造方法。在製 造間隔物組合22時,首先,準備具有與特定尺寸的骨架 24、骨架幾乎相同尺寸的矩形狀的第!以及第2模具36a 、36b。在此情形下,脫脂、淸洗、乾燥由 Fe-45〜55%Ni 所形成板厚0.12mm的薄板後,藉由蝕刻,形成電子束通 過孔26、以及間隔物開孔28,以作爲骨架24。之後,藉 由氧化處理骨架24全體以使其氧化,在包含電子束通過 孔26以及間隔物開孔28的內面之骨架表面形成絕緣膜。 另外,在絕緣膜上噴灑分散氧化錫以及氧化銻的微粒子之 溶液而加以覆蓋,乾燥、燒成此溶液,形成高電阻膜。Next, a method for producing S E D having the above-mentioned structure will be described. When manufacturing the spacer combination 22, first, prepare a rectangular shaped frame having a frame 24 of a specific size and a frame having almost the same size as the frame! And second dies 36a, 36b. In this case, after degreasing, rinsing, and drying a thin plate having a thickness of 0.12 mm formed from Fe-45 to 55% Ni, electron beam passage holes 26 and spacer openings 28 are formed by etching to serve as a skeleton. twenty four. Thereafter, the entire skeleton 24 is oxidized to oxidize it, and an insulating film is formed on the surface of the skeleton including the inner surface of the electron beam passage hole 26 and the spacer opening 28. Further, a solution in which fine particles of tin oxide and antimony oxide are dispersed is sprayed on the insulating film to cover it, and the solution is dried and fired to form a high-resistance film.

如第4圖所示般,作用爲成形模具的第1以及第2模 具36a、36b係具有間隔物形成用的通孔38a、38b,這些 通孔分別對應骨架24的間隔物開孔28而配置。在第1模 具36a以及第2模具36b中,至少在通孔38a、38b的內 面塗佈藉由熱處理可熱分解的樹脂。 在各通孔3 8 a定位於與骨架2 4的間隔物開孔2 8對齊 之狀態下,使第1模具36a和骨架的第i表面24a密接。 同樣地,在各通孔3 8 b定位於與骨架2 4的間隔物開孔2 8 對齊之狀態下,使第2模具36b和骨架的第2表面24b密 接。這些第1模具3 6 a、骨架2 4、以及第2模具3 6 b係利 用未圖示出的夾具等加以固定。 接著,例如,由第1模具3 6 a的外面側供給糊漿狀的 -13- (10) 200414795 38a、骨架24的 孔3 8 b塡充間隔 用含有紫外線硬 的絕緣性的玻璃 間隔物形成材料40,在第i模具的通孔 間隔物開孔28、以及第2模具36b的通 物形成材料40。間隔物形成材料4〇係使 化型之結合劑(有機成分)以及玻璃塡料 糊漿。 接著,對於所 及第2模具3 6 a、 下,稱爲U V ), ,因應需要,也可以進行熱硬化 塗佈在第1以及第2模具36a、 樹脂熱分解,如第5圖所示般, 塡充的間隔物形成材料4〇,由第丨以 川的外面側照射放射線-紫外線(以 使間隔物形成材料進行uv硬化。之後 。接著’藉由熱處理,使 36b的各通孔38a、38b的 在間隔物形成材料4 0和As shown in FIG. 4, the first and second dies 36 a and 36 b functioning as a forming die have through-holes 38 a and 38 b for forming spacers, and these through-holes are arranged corresponding to the spacer openings 28 of the skeleton 24 . In the first mold 36a and the second mold 36b, at least the inner surfaces of the through holes 38a and 38b are coated with a resin that is thermally decomposable by heat treatment. In a state where each of the through holes 3 8 a is aligned with the spacer openings 2 8 of the skeleton 24, the first mold 36a and the i-th surface 24a of the skeleton are brought into close contact. Similarly, the second mold 36b and the second surface 24b of the skeleton are brought into close contact with each other with the through holes 3 8b positioned in alignment with the spacer openings 2 8 of the skeleton 24. The first mold 3 6 a, the skeleton 2 4, and the second mold 3 6 b are fixed with a jig or the like (not shown). Next, for example, -13- (10) 200414795 38a, the holes 3 8 b of the skeleton 24 are supplied in a paste form from the outer side of the first mold 3 6 a, and the gap is formed with an ultraviolet-hard insulating glass spacer. The material 40 is a through-hole spacer opening 28 in the i-th mold and a through-material forming material 40 in the second mold 36b. The spacer-forming material 40 is a binder (organic component) and a glass frit paste. Next, for the second mold 3 6 a and hereinafter referred to as UV), if necessary, thermosetting coating may be performed on the first and second molds 36 a and the resin is thermally decomposed, as shown in FIG. 5. The filled spacer-forming material 40 is irradiated with radiation-ultraviolet rays from the outer side of the tube (to harden the spacer-forming material by UV curing. Then, the respective through holes 38a of 36b, 38b in spacer forming material 40 and

通孔之間形成間隙。在各間隔物形成材料4〇的兩端,即 成爲第 間隔物3 0 a部份的則端以及成爲第2間隔物3⑽ 部份之前端,例如藉由網版印刷法以附著導電性材料之銀 糊漿42。之後’由骨架24分開第1以及第2模具3“、 36b °A gap is formed between the through holes. At both ends of each spacer-forming material 40, that is, the end that becomes part 30a of the second spacer, and the front end that becomes part 3o of the second spacer, for example, the conductive material is attached by screen printing. Silver paste 42. After that, the first and second molds 3 ", 36b are separated by the skeleton 24,

接著’在加熱爐內熱處理形成有藉由間隔物形成材料 4〇所形成的第1以及第2間隔物30a、30b之骨架24,使 間隔物形成材料內之結合劑飛散後,以約5 00〜550 t、 3 0分鐘〜1小時之條件,真正燒成間隔物形成材料以及銀 糊漿42。藉此,如第6圖所示般,可以獲得在骨架24上 製作第1以及第2間隔物30a、30b之間隔物組合22。同 時,銀糊漿42中的銀成分擴散至第1以及第2間隔物 3 0a、3 0b的前端部內的約0.15mm程度之範圍。其結果爲 -14- (11) 200414795 ,可以獲得具備分別在前端部含有銀之導電性賦予部3 1 a 、3 1 b以當成整體部,即成爲一體而具備的第1以及第2 間隔物3 0 a、3 0 b。 另一方面,預先準備:設置有螢光體螢幕16以及金 屬背板1 7之第1基板1 0 ;以及設置有電子放射元件1 8 以及配線2 1的同時,接合有側壁1 4的第2基板1 2。Next, the skeleton 24 of the first and second spacers 30a and 30b formed by the spacer-forming material 40 is heat-treated in a heating furnace, and the binder in the spacer-forming material is scattered, and the distance is about 5 00. The spacer forming material and the silver paste 42 are actually fired under conditions of ~ 550 t and 30 minutes to 1 hour. Thereby, as shown in Fig. 6, a spacer combination 22 in which the first and second spacers 30a and 30b are formed on the skeleton 24 can be obtained. At the same time, the silver component in the silver paste 42 diffuses to the range of about 0.15 mm in the front end portions of the first and second spacers 30a and 30b. The result was -14- (11) 200414795, and it was possible to obtain the first and second spacers provided with the electroconductive imparting portions 3 1 a and 3 1 b each containing silver at the tip portion as a whole, that is, integrally. 3 0 a, 3 0 b. On the other hand, it is prepared in advance: a first substrate 1 0 provided with a phosphor screen 16 and a metal back plate 17; and an electron emitting element 18 and a wiring 2 1 provided, and a second 2 having a side wall 14 bonded thereto Substrate 1 2.

接著,將如上述般構成的間隔物組合2 2定位配置在 第2基板1 2上。此時,定位間隔物組合22以使第2間隔 物3 Ob的延伸端分別配置在配線2 1上。在此狀態下,將 第1基板1 〇、第2基板1 2、以及間隔物組合22配置在真 空腔內,真空排氣真空腔內後,介由側壁1 4以將第1基 板接合在第2基板。藉此,製造完成具備間隔物組合22 的 SED。Next, the spacer combination 22 configured as described above is positioned and placed on the second substrate 12. At this time, the spacer combination 22 is positioned so that the extended ends of the second spacer 3 Ob are arranged on the wiring 21, respectively. In this state, the first substrate 10, the second substrate 12, and the spacer combination 22 are arranged in a vacuum chamber. After the vacuum chamber is evacuated, the first substrate is bonded to the first substrate via the sidewall 14. 2 Board. As a result, the SED including the spacer combination 22 is manufactured.

如依據如上述般構成的S ED,如第3圖所示般,由位 於第2間隔物3 Ob附近的電子放射元件1 8所放射的電子 束B由構成第2間隔物3 Ob的前端部之導電性賦予部3 1 b 所形成的電場所排斥,一面由第2間隔物偏離之方向取得 軌道,一面朝向電子束通過孔26。之後,電子束B此次 被帶電的第2間隔物30b以及第1間隔物30a所吸引,往 接近這些間隔物的方向取得軌道。另外,電子束B由構成 第1間隔物30a的前端部之導電性賦予部3 la所形成的電 場排斥,一面由第1間隔物偏離之方向取得軌道,一面朝 向螢光體螢幕1 6。介由此排斥和吸引,電子束B的軌道 偏差相抵消,由電子放射元件1 8所放射的電子束B最終 -15- (12) 200414795 到達以螢光體螢幕16爲目標之螢光體層。According to the SED structured as described above, as shown in FIG. 3, the electron beam B emitted from the electron emitting element 18 located near the second spacer 3 Ob is formed by the front end portion of the second spacer 3 Ob. The electrical field formed by the conductive property imparting portion 3 1 b repels, and while acquiring the orbit from the direction in which the second spacer deviates, it faces the electron beam passing hole 26. Thereafter, the electron beam B is attracted by the charged second spacer 30b and the first spacer 30a this time, and acquires an orbit in a direction close to these spacers. In addition, the electron beam B is repelled by the electric field formed by the conductivity imparting portion 31a constituting the front end portion of the first spacer 30a, and while orbiting from the direction in which the first spacer deviates, it faces the phosphor screen 16. Due to this repulsion and attraction, the orbital deviation of the electron beam B is canceled, and the electron beam B emitted by the electron emitting element 18 finally reaches -15- (12) 200414795 to the phosphor layer with the phosphor screen 16 as the target.

電子放射元件1 8和間隔物的距離愈小,則電子束往 間隔物側的移動量愈大,反之,電子放射元件和間隔物的 距離相當大時,則電子束往間隔物側移動之量變成可以忽 視。電子束的移動現象係在螢光面所產生的2次電子以及 反射電子衝擊間隔物,間隔物帶電所產生。在S E D所使 用的加速電壓時,間隔物表面的2次電子放射係數在1以 上,間隔物側壁帶正電,變成電子束被吸往間隔物側。 在本SED中,並非使間隔物不帶電,而是藉由在第1 間隔物3 0a的第1基板1 0側之前端部、以及第2間隔物 3 Ob的第2基板1 2側的前端部分別設置導電性賦予部3 1 a 、3 1 b,形成將電子束排斥往由間隔物分離之方向的電場 。藉由控制導電性賦予部3 1 a、3 1 b的高度,可改變電場 強度,能夠控制排斥量。 因此,如依據本SED,則第1以及第2間隔物30a、The smaller the distance between the electron emitting element 18 and the spacer, the greater the amount of movement of the electron beam to the spacer side. Conversely, when the distance between the electron emitting element and the spacer is relatively large, the amount of electron beam moving to the spacer side It can be ignored. The movement of the electron beam is caused by the secondary electrons generated on the fluorescent surface and the reflected electrons striking the spacer, and the spacer is charged. At the acceleration voltage used in SE D, the secondary electron emission coefficient of the surface of the spacer is above 1 and the side wall of the spacer is positively charged, and the electron beam is attracted to the side of the spacer. In this SED, the spacer is not de-energized, but the front end of the first substrate 10 side of the first spacer 3 0a and the front end of the second substrate 12 side of the second spacer 3 Ob Each of the portions is provided with the conductivity-imparting portions 3 1 a and 3 1 b to form an electric field that repels the electron beam in a direction separated by the spacer. By controlling the height of the conductivity-imparting portions 3 1 a and 3 1 b, the electric field strength can be changed, and the amount of repulsion can be controlled. Therefore, according to this SED, the first and second spacers 30a,

3 0b帶電,即使在藉由這些間隔物,電子束B被吸引時, 也可以防止電子束B的軌道偏差。藉此,防止電子束B 的錯誤著陸,降低色純度劣化,可以獲得影像品質提升的 SED。 設置在間隔物的導電性賦予部中,第2基板1 2側的 導電性賦予部3 1 b由於接近電子束的射出側故,藉由此導 電性賦予部3 1 b所形成的電場對於電子束的軌道造成大的 影響。即電子束對於由導電性賦予部3 1 b所形成的電場, 感度高。因此,導電性賦予部3 1 b之由第2基板1 2起的 -16- (13) 200414795 高度即使少許改變,電子束的軌道便會大爲改變。由此理 由,在想要只以第2基板側的導電性賦予部3 1 b來控制電 子束的軌道時,如在製造工程中,導電性賦予部3 1 b的高 度產生偏差時,在由多數的電子放射元件所放射的電子束 間,移動量會產生差異,如此便難於正確控制電子束軌道3 0b is charged, and even when the electron beam B is attracted by these spacers, the orbital deviation of the electron beam B can be prevented. Thereby, the erroneous landing of the electron beam B is prevented, the degradation of color purity is reduced, and a SED with improved image quality can be obtained. In the conductivity imparting portion provided in the spacer, the conductivity imparting portion 3 1 b on the second substrate 12 side is close to the emission side of the electron beam. Therefore, an electric field formed by the conductivity imparting portion 3 1 b is used for electrons. The orbit of the beam makes a big impact. That is, the electron beam has high sensitivity to an electric field formed by the conductivity imparting portion 3 1 b. Therefore, even if the height of the conductivity-imparting portion 3 1 b from the second substrate 12 is -16- (13) 200414795, the orbit of the electron beam is greatly changed even if the height is slightly changed. For this reason, when it is desired to control the trajectory of the electron beam only by the conductivity imparting portion 3 1 b on the second substrate side, if the height of the conductivity imparting portion 3 1 b varies during the manufacturing process, the There is a difference in the amount of movement between the electron beams emitted by most electron emitting elements, so that it is difficult to correctly control the electron beam trajectory

但是,如依據本實施形態之SED,在第1間隔物30a 以及第2間隔物3 Ob的兩間隔物的前端部設置導電性賦予 部3 1 a、3 1 b,使導電性賦予部3 1 b對於電子束軌道的作 用往受到抑制之方向作用,藉由感度低的導電性賦予部 3 1 a以保證軌道補正的不足份。藉此,可以容易而正確地 控制電子束軌道。However, according to the SED according to this embodiment, the conductivity imparting portions 3 1 a and 3 1 b are provided at the tip portions of the two spacers of the first spacer 30 a and the second spacer 3 Ob, and the conductivity imparting portion 3 1 is provided. The effect of b on the orbit of the electron beam is suppressed, and the low-sensitivity conductivity imparting portion 3 1 a is used to ensure the lack of orbit correction. Thereby, the orbit of the electron beam can be easily and accurately controlled.

藉此,可降低導電性賦予部3 1 a、3 1 b的製造精度, 能夠容易地製造導電性賦予部3 1 a、3 1 b。即藉由在第1 以及第2間隔物30a、30b的兩方之前端部設置導電性賦 予部’可以容易獲得與以高的高度精度只在第2基板12 側設置導電性賦予部之情形同樣的效果。 在第1以及第2間隔物30a、30b全體施以導電處理 時’介由間隔物而由第1基板1 〇往第2基板1 2流動的無 效電流增加,引起溫度上升或消耗電力的增加。快,在 SED動作中,此導電處理部成氣體發生源,也會引起配設 在間隔物附近之電子放射元件的離子衝擊。 相對於此,如依據本實施形態,則在第1以及第2間 隔物3 0a、3 Ob的前端部形成導電性賦予部3 1 a、3 1 b,間 -17- (14) 200414795 隔物全體成爲導電部-絕緣部-導電部的3段構造。藉此 ,不會引起無效電流的增加、溫度的上升或消耗電力的增 加、離子衝擊,藉由導電性賦予部3 1 a、3 1 b改變間隔物 周圍的電場,可容易且正確地控制電子束的軌道。Thereby, the manufacturing accuracy of the conductivity imparting portions 3 1 a and 3 1 b can be reduced, and the conductivity imparting portions 3 1 a and 3 1 b can be easily manufactured. That is, by providing the conductivity imparting portion 'on both ends of the first and second spacers 30a and 30b, it is easy to obtain the same as the case where the conductivity imparting portion is provided only on the second substrate 12 side with high accuracy. Effect. When conductive treatment is applied to the entirety of the first and second spacers 30a and 30b, the reactive current flowing from the first substrate 10 to the second substrate 12 through the spacer increases, causing a rise in temperature or power consumption. Quickly, in the SED operation, this conductive processing unit becomes a gas generating source, and it also causes ion impact of the electron emitting element arranged near the spacer. On the other hand, according to this embodiment, the conductivity-imparting portions 3 1 a and 3 1 b are formed at the tip portions of the first and second spacers 3 0a and 3 Ob, and the spacer is 17- (14) 200414795. The whole has a three-stage structure of a conductive part-insulating part-conductive part. Thereby, the increase in the reactive current, the increase in temperature, the increase in power consumption, and the ion impact are not caused. By changing the electric field around the spacer by the conductivity imparting portions 3 1 a and 3 1 b, electrons can be easily and accurately controlled The orbit of the beam.

準備本實施形態之S ED,和設置不具有上述之導電性 賦予部3 1 a、3 1 b的間隔物的SED,比較電子束的移動量 。其結果爲,在不設置導電性賦予部31a、31b之SED中 ,電子束被吸引於間隔物側約1 2 0 // m,相對於此,在本 實施形態之SED中,電子束的移動量爲±20//m,顯示影 像的色純度也獲得改善。The S ED of this embodiment is prepared, and the SED provided with a spacer not having the above-mentioned conductivity imparting sections 3 1 a and 3 1 b is used to compare the amount of movement of the electron beam. As a result, in the SED without the conductivity imparting portions 31a and 31b, the electron beam is attracted to the spacer side by about 1 2 0 // m. In contrast, in the SED of this embodiment, the electron beam moves. The amount is ± 20 // m, and the color purity of the displayed image is also improved.

如依據本S ED,在第1基板1 0和第2基板1 2之間配 置骨架24,同時,第1間隔物30a的高度形成爲比第2 間隔物3 Ob的高度低。藉此,骨架24位於比第2基板12 而更接近第1基板1 0側。因此,即使由第1基板1 0側產 生放電時,也可能藉由骨架24以抑制設置在第2基板1 2 上的電子放射元件1 8之放電破損。因此,可以獲得對於 放電之耐電壓性優異,影像品質提升的SED。 如依據上述構造的SED,藉由將第1間隔物30a的高 度形成爲比第2間隔物3 Ob低,即使施加在骨架24的電 壓比施加在第1基板1 0的電壓大時,也可使由電子放射 元件1 8所產生的電子確實到達螢光體螢幕側。 接著,說明關於本發明之第2實施形態的間隔物之製 造方法。藉由與上述第1實施形態同樣的方法,形成特定 尺寸的骨架24,另外,準備第1以及第2模具36a、36b -18- (15) 200414795 。接著’與第4圖所示情形相同,在各通孔3 8a定位於與 骨架24的間隔物開孔28對齊之狀態下,使第1模具36a 和骨架的第1表面24a密接。同樣地,在各通孔38b定位 於與骨架24的間隔物開孔28對齊之狀態下,使第2模具 36b和骨架的第2表面2#密接。這些第i模具36a、骨 架24、以及第2模具36b係利用未圖示出的夾具等加以 固定。According to this SED, the skeleton 24 is arranged between the first substrate 10 and the second substrate 12, and the height of the first spacer 30a is lower than the height of the second spacer 3 Ob. Thereby, the skeleton 24 is positioned closer to the first substrate 10 side than the second substrate 12. Therefore, even when a discharge is generated from the first substrate 10 side, it is possible to suppress the discharge damage of the electron emitting element 18 provided on the second substrate 12 by the skeleton 24. Therefore, it is possible to obtain an SED which is excellent in the withstand voltage against discharge and has improved image quality. According to the SED structured above, by forming the height of the first spacer 30a lower than that of the second spacer 3 Ob, even when the voltage applied to the skeleton 24 is larger than the voltage applied to the first substrate 10, it is possible to The electrons generated by the electron emitting element 18 are allowed to reach the screen side of the phosphor. Next, a method for manufacturing a spacer according to a second embodiment of the present invention will be described. In the same manner as the first embodiment, a skeleton 24 having a specific size is formed, and first and second molds 36a, 36b -18- (15) 200414795 are prepared. Next, as in the case shown in FIG. 4, the first mold 36a and the first surface 24a of the skeleton are brought into close contact with each other through the holes 38a aligned with the spacer openings 28 of the skeleton 24. Similarly, the second mold 36b and the second surface 2 # of the skeleton are brought into close contact with each other with the through holes 38b aligned with the spacer openings 28 of the skeleton 24. The i-th mold 36a, the skeleton 24, and the second mold 36b are fixed by a jig or the like (not shown).

接著’例如,由第1模具3 6 a的外面側供給糊漿狀的 間隔物形成材料40,在第1模具的通孔38a、骨架24的 間物開孔2 8、以及第2模具3 6 b的通孔3 8 b塡充間隔 物形成材料40。間隔物形成材料40係使用含有uv硬化 型之結合劑(有機成分)以及玻璃塡料的絕緣性的玻璃糊 漿。Next, for example, a paste-like spacer-forming material 40 is supplied from the outer side of the first mold 3 6 a, and the through-holes 38 a of the first mold, the spacers 28 of the frame 24 are opened, and the second mold 3 6 The through hole 3 8 b of b is filled with the spacer forming material 40. The spacer-forming material 40 is an insulating glass paste containing a UV-curable binder (organic component) and a glass frit.

接著’對於所塡充的間隔物形成材料40,由第1以 及第2模具36a、36b的外面側照射uv,使間隔物形成材 料㈣硬化。之後,因應需要’也可以進行熱硬化。 接者,耠由熱處理,使塗佈在第2以及第2模具“a、 的各通孔3 8 a、3 8 b的樹脂熱分解,如第7圖所示般 ’在間隔物形成材40和通孔之間形成間隙。之後,由 骨架24分開第i以及第2模具3“、心。 接著,在加熱爐內熱處理形成有藉由間隔物形成材 4〇所形成的第1以及第2間隔物30a、3〇b之骨架24 間隔物形:材料內之結合劑飛散以進行脫離結合:處理 之饺,如第8圖所示般’間隔物形成材料4〇在燒結前 -19- (16) 200414795 多孔質狀態下,只在第1間隔物3 〇a的前端、以及第2間 隔物3 Ob的前端,例如藉由噴墨方式,使之附著由銀的超 微粒子和四癸烷溶液所形成的溶液。附著之溶液藉由毛細 管現象’滲透於第1以及第2間隔物3 0 a、3 0 b的前端部 內約0.2 m m。Next, "the filled spacer-forming material 40 is irradiated with UV from the outer surfaces of the first and second molds 36a and 36b, and the spacer-forming material is hardened. After that, you may heat-harden as needed. Then, the resin applied to each of the through holes 3 8 a and 3 8 b of the second and second molds “a,” is thermally decomposed by heat treatment, as shown in FIG. 7, in the spacer forming material 40. A gap is formed between the through hole and the through hole. Thereafter, the i-th and second molds 3 ″ and the core are separated by the skeleton 24. Next, the first and second spacers 30a, 30b formed by the spacer-forming material 40 are formed into a framework 24 by heat treatment in a heating furnace. The spacer shape: The binding agent in the material is scattered for debonding: The processed dumplings are as shown in FIG. 8 'The spacer-forming material 4〇 Before sintering -19- (16) 200414795 In a porous state, only the front end of the first spacer 30a and the second spacer The 3 Ob front end is, for example, ink-jet-attached to a solution formed by silver ultrafine particles and a tetradecane solution. The adhered solution permeated into the front end portions of the first and second spacers 30 a and 30 b by a capillary phenomenon 'by about 0.2 mm.

接著’將形成有第1以及第2間隔物30a、3〇b之骨 架2 4配置在加熱爐內,以約5 〇 〇〜5 5 〇艺、3 〇分鐘〜1小 時之條件’進行真正燒成。藉由真正燒成,構成間隔物形 成材料的玻璃粒子成爲一體,可以獲得在骨架24上製作 第1以及第2間隔物3 0 a、3 0 b之間隔物組合2 2。同時, 可以獲得具備分別在前端部含有銀之導電性賦予部3 1 a、 3 1b以當成整體部的第1以及第2間隔物30a、30b。 之後,藉由與第1實施形態同樣的方法,藉由裝組第 1基板1 〇、間隔物組合2 2、以及第2基板,可以獲得具 備間隔物組合22的SED。Next, "the skeleton 24 having the first and second spacers 30a and 30b formed therein is arranged in a heating furnace, and the actual firing is performed under the conditions of about 500 to 5500 processes and 30 minutes to 1 hour." to make. By actually firing, the glass particles constituting the spacer forming material are integrated, and the spacer combination 22 of the first and second spacers 3 0 a and 3 0 b can be obtained on the skeleton 24. At the same time, it is possible to obtain first and second spacers 30a and 30b each including the conductive provision portions 3 1 a and 3 1b each including silver at the tip portion as an integral portion. Thereafter, by the same method as in the first embodiment, by mounting the first substrate 10, the spacer combination 22, and the second substrate, an SED having the spacer combination 22 can be obtained.

準備本實施形態之S ED,和設置不具有上述之導電性 賦予部3 1 a、3 1 b的間隔物的S ED,比較電子束的移動量 。其結果爲,在不設置導電性賦予部31a、31b之SED中 ,電子束被吸引於間隔物側約1 2 0 # m ’相對於此,在本 實施形態之SED中,電子束的移動量爲±20//m,顯示影 像的色純度也獲得改善。 另外,其他構造與上述第1實施形態相同,對於相同 部份賦予相同的參考符號’省略其之詳細說明。在具備藉 由第2實施形態之製造方法所製作的間隔物之SED中, -20- (17)200414795 可以獲得與第 接著,說 造方法。藉由 的同時,準備 圖所示般,在 2 8對齊之狀態 密接。同樣地 開孔2 8對齊; 面24b密接。 2模具36b係' 接著,例 物形成材料之 架24的間隔今 充間隔物形成 孔3 8b的端部 4 〇 a係使用含 性之玻璃糊漿 接著,由 給當作間隔物 而注入通孔3 硬化型之結合 爲具有導電性 接著,對 第1以及第2 1貝S也形態同樣的作用效果。 明關S令本:發之第3實施形態的間隔物之製 與第1貫施形態同樣的方法,形成骨架2 4 第1以及第2模具36a、36b。接著,如第9 各通孔3 8a定位於與骨架24的間隔物開孔 ;下’使桌If旲具30a和骨架的第1表面24a ’在各通孔3 8 b定位於與骨架2 4的間隔物 之狀態下’使第2模具3 6b和骨架的第2表 而且,這些第1模具36a、骨架24、以及第 利用未圖示出的夾具等加以固定。 如’由第1模具3 6a的外面側供給作爲間隔 第1糊漿40a,在第1模具的通孔38a、骨 勿開孔2 8、以及第2模具3 6 b的通孔3 8 b塡 材料40。此時,在通孔38a的端部以及通 不塡充第1糊漿40a而殘留空間。第1糊漿 有UV硬化型的結合劑以及玻璃塡料的絕緣 ,作爲不含具有導電性成分之糊漿。 第1模具3 6a以及第2模具3 6b的外面側供 形成材料之第2糊漿40b,重疊在第1糊漿 8a、3 8b的端部。第2糊漿40b係使用含UV 劑(有機成分)、以及玻璃塡料的同時’作 之成分而擴散有Au粒子之玻璃糊漿。 於所塡充的第1以及第2糊漿40a、40b由 模具36a、36b的外面側照射UV,使第1以The S ED of this embodiment is prepared, and the S ED provided with the spacers without the above-mentioned conductivity imparting portions 3 1 a and 3 1 b is compared to compare the amount of movement of the electron beam. As a result, in the SED in which the conductivity imparting portions 31a and 31b are not provided, the electron beam is attracted to the spacer side by about 1 2 0 # m '. In contrast, in the SED of this embodiment, the amount of movement of the electron beam It is ± 20 // m, and the color purity of a displayed image is also improved. In addition, other structures are the same as those of the first embodiment described above, and the same reference numerals are assigned to the same portions' and detailed descriptions thereof are omitted. In the SED including a spacer manufactured by the manufacturing method of the second embodiment, -20- (17) 200414795 can be obtained in the same manner as in the following. At the same time, prepare as shown in the figure, and close contact in the state of 2 8 alignment. Similarly the openings 2 8 are aligned; faces 24b are in close contact. 2 mold 36b system 'Next, the spacer 24 of the example forming material is filled with the spacer forming hole 3 8b. The end 40a is made of glass paste, and then the through hole is injected as a spacer. 3 The combination of the hardened type is conductive. Next, the same effect is achieved on the first and second sintered S. Mingguan S order book: The system of the third embodiment of the spacer is made in the same way as the first embodiment, and the skeleton 2 4 first and second molds 36a and 36b are formed. Next, as the ninth through-holes 3 8a are positioned in the spacer openings with the skeleton 24; the next 'make the table If fixture 30a and the first surface 24a of the skeleton' is positioned in each through-hole 3 8 b with the skeleton 2 4 In the state of the spacer, the second mold 36b and the second table of the skeleton are fixed, and these first mold 36a, the skeleton 24, and the second mold are fixed by a jig or the like (not shown). For example, if the first paste 40a is supplied from the outer side of the first mold 36a, the through-hole 38a of the first mold, the bone-free opening 28, and the through-hole 3 8b of the second mold 3 6b. Material 40. At this time, space is left at the end of the through hole 38a and through the first paste 40a. The first paste contains a UV-curable binder and insulation of glass frit. It is a paste that does not contain conductive components. A second paste 40b for forming materials is provided on the outer surfaces of the first mold 36a and the second mold 36b, and overlaps the ends of the first pastes 8a and 38b. The second paste 40b is a glass paste in which Au particles are diffused by using a component containing both a UV agent (organic component) and a glass frit. The filled first and second pastes 40a and 40b are irradiated with UV from the outer sides of the molds 36a and 36b, so that the first and second pastes 40a and 40b are irradiated with UV.

-21 - (18) 200414795 及第2糊漿進行UV硬化。之後,因應需要,也可以進行 熱硬化。接著,藉由熱處理,使塗佈在第1以及第2模具 3 6a、3 6b的各通孔38a、38b的樹脂熱分解,在第1以及 第2糊漿4〇a、40b和通孔之間形成間隙。之後,由骨架 24分開第1以及第2模具36a、36b。-21-(18) 200414795 and the second paste are UV-cured. After that, if necessary, heat curing may be performed. Next, the resin applied to each of the through holes 38a and 38b of the first and second dies 36a and 36b is thermally decomposed by heat treatment, and the resin is applied between the first and second pastes 40a and 40b and the through holes. A gap is formed between them. Thereafter, the first and second molds 36a, 36b are separated by the skeleton 24.

分開後,在加熱爐內熱處理形成有藉由第1以及第2 糊漿4 0 a、4 0 b所形成的第1以及第2間隔物3 0 a、3 0 b之 骨架24,使第1以及第2糊漿內之結合劑飛散以進行脫 離結合劑處理。另外,以約 5 0 0〜5 5 0 °C、3 0分鐘〜1小 時,真正燒成第1以及第2糊漿40a、40b。藉此,如第 1 1圖所示般,可以獲得在骨架2 4上製作第1以及第2間 隔物3 0 a、3 0 b之間隔物組合2 2。同時,可以獲得具備分 別在前端部含有銀之導電性賦予部3 1 a、3 1 b以當成整體 部的第1以及第2間隔物30a、30b。After the separation, the first and second spacers 3 0 a and 3 0 b formed by the first and second pastes 40 a and 4 0 b are heat treated in a heating furnace to form the first 24 And the binding agent in the second paste is scattered to perform a debinding treatment. In addition, the first and second pastes 40a and 40b are actually fired at about 500 to 550 ° C and 30 minutes to 1 hour. Thereby, as shown in Fig. 11, a spacer combination 22 of the first and second spacers 30a and 30b can be obtained on the skeleton 24. At the same time, it is possible to obtain first and second spacers 30a and 30b each having a conductive property imparting portion 3 1 a and 3 1 b containing silver at the tip portion as an integral portion.

之後,藉由與第1實施形態同樣的方法,藉由裝組第 1基板1 〇、間隔物組合2 2、以及第2基板,可以獲得具 備間隔物組合22的SED。 準備本實施形態之SED,和設置不具有上述之導電性 賦予部3 1 a、3 1 b的間隔物的S E D,比較電子束的移動量 。其結果爲,在不設置導電性賦予部3 1 a、3 1 b之S ED中 ,電子束被吸引於間隔物側約1 2 〇 # m,相對於此,在本 實施形態之SED中,電子束的移動量爲±20 // m,顯示影 像的色純度也獲得改善。 另外,其他構造與上述第1實施形態相同,對於相同 -22- (19) 200414795 部份賦予相同的參考符號’省略其之詳細說明。而且,在 具備藉由第3實施形態之製造方法所製作的間隔物之S E D 中,可以獲得與第1實施形態同樣的作用效果。Thereafter, by the same method as in the first embodiment, by mounting the first substrate 10, the spacer combination 22, and the second substrate, an SED having the spacer combination 22 can be obtained. The SED of this embodiment is prepared, and the S E D provided with a spacer not having the above-mentioned conductivity-imparting portions 3 1 a and 3 1 b is prepared, and the amount of movement of the electron beam is compared. As a result, in the S ED in which the conductivity imparting portions 3 1 a and 3 1 b are not provided, the electron beam is attracted to the spacer side by about 1 2 0 # m. In contrast, in the SED of this embodiment, The amount of electron beam movement is ± 20 // m, and the color purity of the displayed image is also improved. In addition, other structures are the same as those of the first embodiment described above, and the same reference numerals are given to the same parts as -22- (19) 200414795, and detailed descriptions thereof are omitted. Further, in the S E D including the spacer produced by the manufacturing method of the third embodiment, the same effect as that of the first embodiment can be obtained.

本發明並不限定於上述實施形態,在本發明之範圍內 ,可有種種之變形。例如,本發明並不限定於具備骨架之 影像顯示裝置,也可以適用於不具有骨架之影像顯示裝置 。在此情形下,利用個別形成爲一體之柱狀或者板狀的間 隔物,藉由在各間隔物的第1基板側的前端部以及第2基 板側的前端部設置導電性賦予部使成爲一體,也可以獲得 與上述同樣的作用效果。The present invention is not limited to the above embodiments, and various modifications are possible within the scope of the present invention. For example, the present invention is not limited to an image display device having a skeleton, but can also be applied to an image display device having no skeleton. In this case, by using a columnar or plate-shaped spacer that is formed as a single body, a conductive portion is provided at the front end portion of the first substrate side and the front end portion of the second substrate side of each of the spacers to be integrated. Also, the same effect as the above can be obtained.

另外,在本發明中,間隔物的直徑或高度、其他的構 成要素之尺寸、材質等,可因應需要而適當選擇。在上述 之實施形態中,間隔物的第2基板側之一端雖設爲設置在 第2基板的配線上而構成,但是不限定爲配線上,只要在 避開電子放射元件之位置而設置在第2基板上即可。骨架 的間隔物開孔也可以省略。 在將骨架24的電位設定爲與第1基板的電位相同電 位時,也可使第1間隔物全體含浸導電性材料,將第1間 隔物全體形成作爲導電性賦予部。 另外,在上述之實施形態中,雖設爲在第1以及第2 間隔物的前端部形成導電性賦予部之構造,但是也可以藉 由上述之製造方法,只在第2間隔物的前端部,即間隔物 的第2基板側的前端部形成導電性賦予部,利用此間隔物 以構成SED。 -23- (20) (20)200414795 電子源並不限定爲表面傳導型電子放射元件’只要是 使用電場放射型、奈米碳管等之在真空中放射電子的電子 源之FED,任何形式都可以使用。 產業上利用可能性 如依據本發明,可以提供:不引起溫度上升或消耗電 力增加、製造成本增加,可以容易控制電子束的軌道,影 像品質提升的影像顯示裝置、此影像顯示裝置使用的間隔 物之製造方法、以及具備藉由上述製造方法所製造之間隔 物之影像顯示裝置。 【圖式簡單說明】 第1圖係顯示關於本發明之第1實施形態的表面傳導 型電子放射裝置(以下,稱爲S ED )的斜視圖。 第2圖係沿著第1圖的線Π-ΙΙ而剖開之上述SED的In addition, in the present invention, the diameter or height of the spacer, the dimensions and materials of other constituent elements can be appropriately selected according to need. In the above-mentioned embodiment, one end of the spacer on the second substrate side is configured to be provided on the wiring of the second substrate, but it is not limited to the wiring. 2 on the substrate. The spacer openings of the skeleton can also be omitted. When the potential of the skeleton 24 is set to the same potential as that of the first substrate, the entire first spacer may be impregnated with a conductive material, and the entire first spacer may be formed as a conductivity-imparting portion. Moreover, in the said embodiment, although the structure which provided the electroconductivity imparting part in the front-end | tip part of a 1st and 2nd spacer, it is good also as the manufacturing method mentioned above, only the front-end | tip part of a 2nd spacer That is, the front end portion of the spacer on the second substrate side forms a conductivity-imparting portion, and the spacer is used to form a SED. -23- (20) (20) 200414795 The electron source is not limited to a surface-conduction electron emission element. As long as it is an FED for an electron source that emits electrons in a vacuum, such as an electric field emission type, a nano carbon tube, etc. can use. According to the present invention, according to the present invention, it is possible to provide an image display device capable of easily controlling the trajectory of an electron beam without causing a temperature rise, an increase in power consumption, and an increase in manufacturing cost, an image display device with improved image quality, and a spacer used in the image display device. A manufacturing method and an image display device including the spacer manufactured by the manufacturing method. [Brief Description of the Drawings] Fig. 1 is a perspective view showing a surface-conduction electron emission device (hereinafter, referred to as SED) according to a first embodiment of the present invention. Fig. 2 is a sectional view of the above-mentioned SED taken along the line II-II of Fig. 1

第3圖係放大上述s ED而顯示之剖面圖。 第4圖係顯示在上述SED使用的間隔物之製造工程 中’在骨架裝置第1以及第2模具之狀態的剖面圖。 第5圖係顯示在上述製造工程中,於上述模具塡充間 隔物形成材料後,進行UV照射、銀糊漿附著之狀態的剖 面圖。 第6圖係顯示在上述製造工程中,離開上述模具之狀 態的剖面圖。 -24- (21)200414795 第7圖係顯示關於本發明之第2實施形態的S ED之 間隔 物 製 造 方 法的剖面圖。 第 8 圖 係 顯示在關於上述第2 實 施形態 之 間 隔 物 製 造 方法 中 在 間 隔物前端部附著含具 有 導電性 成 分 之 溶 液 的 工程 剖 面 圖 〇 第 9 圖係顯示關於本發明之第3 ;實施形態的 ]SED 之 間隔 物 製 造 方 法剖面圖。 第 1 0 圖 係顯示在關於上述第 3 實施形 育g 之 間 隔 物 製 造方 法 中 在 模具塡充第1糊漿以 及 第2糊 漿 之 狀 態 的 剖 面圖 〇 第 1 1 圖 係顯示在關於上述第 3 實施形 態 之 間 隔 物 製 造方 法 中 離 開模具而燒成之狀態E 的 剖面圖 〇 主要 元 件 對 照 表 10 第 1 基 板 12 第 2 基 板 14 側 壁 15 真 空 外 圍器 16 螢 光 體 螢幕 17 金 屬 背 層 18 電 子 放 射元件 20 密 封 材 2 1 配 線 22 間 隔 物 組合FIG. 3 is a cross-sectional view showing the above-mentioned s ED in an enlarged manner. Fig. 4 is a cross-sectional view showing the state of the first and second molds of the skeleton device in the manufacturing process of the spacer used in the SED. Fig. 5 is a cross-sectional view showing a state in which the spacer forming material is filled with the mold, UV irradiation is performed, and a silver paste is adhered in the manufacturing process. Fig. 6 is a sectional view showing a state where the mold is separated from the mold during the manufacturing process. -24- (21) 200414795 Fig. 7 is a cross-sectional view showing a method for manufacturing a spacer of S ED according to a second embodiment of the present invention. FIG. 8 is a process cross-sectional view showing a solution containing a conductive component adhered to the front end of the spacer in the method for manufacturing a spacer according to the second embodiment. FIG. 9 is a view showing a third embodiment of the present invention; Of] SED spacer manufacturing method cross-sectional view. Fig. 10 is a cross-sectional view showing a state in which a first paste and a second paste are filled in a mold in the spacer manufacturing method according to the third embodiment described above. Fig. 11 is a diagram showing a state in which the first paste and the second paste are filled. 3 Sectional view of the state E fired from the mold in the spacer manufacturing method of the embodiment. ○ Main component comparison table 10 First substrate 12 Second substrate 14 Side wall 15 Vacuum peripheral 16 Phosphor screen 17 Metal back layer 18 Electronics Radiation element 20 Sealing material 2 1 Wiring 22 Spacer combination

-25- (22) 200414795 (22)-25- (22) 200414795 (22)

24 骨 架 26 電 子 束 通 過 孔 28 間 隔 物 開 孔 30a 第 1 間隔 物 30b 第 2 間 隔 物 3 1a 導 電 性 賦 予 部 3 1b 導 電 性 賦 予 部 36a 第 1 模 具 36b 第 2 模 具 40 間 隔 物 形 成 材24 bone frame 26 electron beam passing through hole 28 spacer opening 30a first spacer 30b second spacer 3 1a conductivity imparting portion 3 1b conductivity imparting portion 36a first mold 36b second mold 40 spacer formed material

-26--26-

Claims (1)

200414795 ⑴ 拾、申請專利範圍 1 · 一種影像顯示裝置,其特徵爲具備: 具有螢光面的第1基板;及 與i:述第1基板保有間隙而相對配置,同時,設置放 射電子以激勵上述螢光面的多數電子源之第2基板;及200414795 ⑴ Patent application scope 1 · An image display device comprising: a first substrate having a fluorescent surface; and i: the first substrate is arranged opposite to the first substrate with a gap, and at the same time, radiated electrons are provided to stimulate the above The second substrate of the majority of the electron sources on the fluorescent surface; and 個別以絕緣材料形成,同時,配設在上述第1基板以 及第2基板間’以支持作用在第1以及第2基板的大氣壓 負載之多數間隔物, 上述各間隔物的上述第1基板側的前端部以及第2基 板側的前端部,係含浸導電性材料,分別形成導電性賦予 部。 2 ·如申請專利範圍第1項記載之影像顯示裝置,其中 ,上述各導電性賦予部的上述導電性材料之含有濃度,係 由上述間隔物的前端往中間部而減少。They are each formed of an insulating material, and are disposed between the first substrate and the second substrate to support a plurality of spacers acting on the atmospheric pressure load on the first and second substrates. The distal end portion and the distal end portion on the second substrate side are impregnated with a conductive material and each form a conductivity imparting portion. 2. The image display device according to item 1 of the scope of patent application, wherein the concentration of the conductive material in each of the conductive imparting portions is reduced from the front end of the spacer to the middle portion. 3 .如申請專利範圍第1項或者第2項中任一項所記載 之影像顯示裝置,其中,上述間隔物係以含玻璃之絕緣材 料形成,上述各導電性賦予部係含分散在形成上述間隔物 之玻璃成分中而具有導電性的金屬粒子。 4.如申請專利範圍第1項或者第2項中任一項所記載 之影像顯示裝置’其中,上述間隔物係以含玻璃之絕緣材 料形成,上述各導電性賦予部係含擴散在形成上述間隔物 之玻璃成分中而具有導電性的金屬成分。 5 .如申請專利範圍第3項記載之影像顯示裝置’其中 ,上述金屬粒子係含Ni、In、Ag、Au、pt、Ir、Ru、W -27- (2) 200414795 之至少其中一種。 6 ·如申請專利範圍第1項記載之影像顯示裝置,其中 ,具備設置在上述第2基板上的多數電位供給用配線, 上述各間隔物之第2基板側的一端係配置在上述電位 供給用配線上。 7·如申請專利範圍第6項記載之影像顯示裝置,其中 ,上述電子源係表面傳導型電子源。 8 .如申請專利範圍第7項記載之影像顯示裝置,其中 ’上述電位供給用配線係對於上述電子源供給電位的配線 9 ·如申請專利範圍第1項或者第2項中任一項所記載 之影像顯示裝置,其中,具備設置在上述第1以及第2基 板間,同時,具有對應上述電子源之多數的電子束通過孔 的板狀的骨架, 上述各間隔物係固定在上述骨架。3. The image display device according to any one of item 1 or item 2 of the patent application scope, wherein the spacer is formed of a glass-containing insulating material, and each of the conductivity-imparting units is dispersed to form the above. Metal particles having conductivity in the glass component of the spacer. 4. The image display device according to any one of the scope of claims 1 or 2, wherein the spacer is formed of a glass-containing insulating material, and each of the conductivity imparting units is formed by diffusion. Among the glass components of the spacer, a conductive metal component. 5. The image display device according to item 3 in the scope of the patent application, wherein the metal particles include at least one of Ni, In, Ag, Au, pt, Ir, Ru, W -27- (2) 200414795. 6. The image display device according to item 1 of the scope of patent application, which includes a plurality of potential supply wirings provided on the second substrate, and one end of the second substrate side of each of the spacers is disposed on the potential supply. Wiring. 7. The image display device according to item 6 of the scope of patent application, wherein the electron source is a surface conduction electron source. 8. The image display device described in item 7 of the scope of patent application, wherein 'the potential supply wiring is a wiring that supplies potential to the electron source. 9] As described in any one of the scope of the patent application, item 1 or 2. The image display device includes a plate-shaped skeleton provided between the first and second substrates, and having a plurality of electron beam passage holes corresponding to the plurality of electron sources, and the spacers are fixed to the skeleton. 1 〇 · —種間隔物之製造方法,是針對在具備:具有螢 光面的第1基板;及與上述第1基板保有間隙而相對配置 ,同時,設置放射電子以激勵上述螢光面的多數電子源之 第2基板的影像顯示裝置中,製造配設在上述第1基板以 及第2基板間,以支持作用在第1以及第2基板的大氣壓 負載之多數間隔物的間隔物之製造方法,其特徵爲: 藉由絕緣材料形成間隔物, 在上述形成的間隔物的前端部附著含具有導電性成分 的糊槳或者溶液,藉由毛細管現象,在上述間隔物的前端 -28- (3) 200414795 部內浸染上述糊漿或者溶液, 燒成浸染了上述糊漿或者溶液之間隔物,以形成在前 端部具有含浸導電性材料之導電性賦予部的間隔物。 1 1 .如申請專利範圍第1 0項記載之間隔物之製造方法 ,其中,在上述形成的間隔物之兩端部附著上述糊漿,形 成在兩端部具有含浸了導電性材料之導電性賦予部的間隔 物。1 〇 · A method for manufacturing a spacer is directed to a first substrate having a fluorescent surface; and a first substrate having a fluorescent surface; and a first substrate having a gap therebetween and arranged opposite to each other; In the image display device of the second substrate of the electron source, a method of manufacturing a spacer that is disposed between the first substrate and the second substrate and supports a plurality of spacers acting on the atmospheric pressure load of the first and second substrates. It is characterized in that a spacer is formed of an insulating material, and a paddle or a solution containing a conductive component is attached to a front end portion of the spacer formed above, and a capillary phenomenon is applied to the front end of the spacer -28- (3) 200414795 The above-mentioned paste or solution is impregnated in the interior, and a spacer impregnated with the above-mentioned paste or solution is fired to form a spacer having a conductivity-imparting portion impregnated with a conductive material at the tip. 1 1. The method for manufacturing a spacer according to item 10 of the scope of patent application, wherein the two pastes are adhered to both ends of the spacer formed as described above, and the two ends are formed to have conductivity impregnated with a conductive material. A spacer for the imparting portion. 1 2 · —種間隔物之製造方法,是針對製造使用於具備 :具有螢光面的第1基板;及與上述第1基板保有間隙而 相對配置,同時,設置放射電子以激勵上述螢光面的多數 電子源之第2基板;及配設在上述第1基板以及第2基板 間,以支持作用在第1以及第2基板的大氣壓負載之多數 間隔物的影像顯示裝置之上述間隔物的間隔物之製造方法 ,其特徵爲: 藉由絕緣材料形成間隔物,1 2 · A method for manufacturing a spacer is aimed at manufacturing and using a first substrate having a fluorescent surface; and a relative arrangement with the first substrate with a gap therebetween, and radiating electrons are provided to excite the fluorescent surface The second substrate of the majority of the electron sources; and the interval of the spacers of the image display device arranged between the first substrate and the second substrate to support the majority of the spacers acting on the atmospheric pressure load of the first and second substrates A method for manufacturing an object is characterized in that: a spacer is formed by an insulating material, 在上述形成的間隔物的前端部附著含具有導電性成分 的糊漿 加熱處理附著上述糊漿之間隔物,使具有導電性之成 分熱擴散於間隔物的前端部內,以形成在前端部具有含浸 導電性材料之導電性賦予部的間隔物。 1 3 ·如申請專利範圍第1 2項記載之間隔物之製造方法 ,其中,在上述形成的間隔物之兩端部附著上述糊漿,形 成在兩端部具有含浸了導電性材料之導電性賦予部的間隔 物。 -29- (4) 200414795 1 4 · 一種間隔物之製造方法,是針對使用於具備:具 有螢光面的第1基板;及與上述第1基板保有間隙而相對 配置,同時,設置放射電子以激勵上述螢光面的多數電子 源之第2基板;及配設在上述第1基板以及第2基板間, 以支持作用在第1以及第2基板的大氣壓負載之多數間隔 物的影像顯示裝置之間隔物之製造方法,其特徵爲: 準備具有形成間隔物用的多數通孔之成形模具,A paste containing a conductive component is adhered to the front end portion of the spacer formed as described above. The spacer containing the paste is heat-treated to thermally diffuse the conductive component into the front end portion of the spacer to form an impregnation at the front end portion. The spacer of the conductivity-imparting portion of the conductive material. 1 3 · The method for manufacturing a spacer according to item 12 of the scope of patent application, wherein the paste is adhered to both ends of the spacer formed as described above, and the conductive material impregnated with a conductive material is formed at both ends. A spacer for the imparting portion. -29- (4) 200414795 1 4 · A method for manufacturing a spacer is used for a first substrate having: a fluorescent substrate; and a first substrate having a gap therebetween and arranged opposite to each other, and at the same time, radiating electrons are provided to A second substrate that excites the majority of the electron sources on the fluorescent surface; and an image display device that is disposed between the first substrate and the second substrate to support a plurality of spacers acting on the atmospheric pressure load on the first and second substrates A method for manufacturing a spacer is characterized in that: a forming mold having a plurality of through holes for forming a spacer is prepared, 將不含具有導電性之成分的第1糊漿注入上述通孔, 將分散具有導電性之成分的第2糊漿重疊於上述第1 糊漿而注入上述通孔, 加熱處理上述第1以及第2糊漿,以形成在前端部具 備分散了具有導電性之成分的導電性賦予部的間隔物。A first paste containing no conductive component is injected into the through hole, a second paste dispersed with a conductive component is superposed on the first paste and injected into the through hole, and the first and first heat treatments are performed. 2 paste to form a spacer having a conductivity-imparting portion in which a component having conductivity is dispersed at a tip portion. 1 5 .如申請專利範圍第1 4項記載之間隔物之製造方法 ,其中,在將上述第1糊漿注入上述通孔後,由各通孔的 兩端側與上述第1糊漿的兩端側重疊而注入上述第2糊漿 ,以形成在前端部具備分散了具有導電性之成分的導電性 賦予部的間隔物。 1 6 . —種影像顯示裝置,其特徵爲具備: 具有螢光面的第1基板;及 與上述第1基板保有間隙而相對配置,同時,設置放 射電子以激勵上述螢光面的多數電子源之第2基板;及 藉由申請專利範圍第1 0項至第1 5項中任一項所記載 之製造方法所製造,配設在上述第1基板以及第2基板間 ,以支持作用在第1以及第2基板的大氣壓負載之多數間 -30- (5) (5)200414795 隔物。 1 7 ·如申請專利範圍第1 6項記載之影像顯示裝置,其 中’具備:設置在上述第i以及第2基板之間,同時,具 有分別對應上述電子源之多數的電子束通過孔的板狀之骨 架, 上述各間隔物係固定在上述骨架。 1 8 · —種影像顯示裝置,其特徵爲具備: 具有螢光面的第1基板;及 與上述第1基板保有間隙而相對配置,同時,設置放 射電子以激勵上述螢光面的多數電子源之第2基板;及 設置在上述第1基板以及第2基板間,同時,具有分 別對應上述電子源之多數的電子束通過孔的板狀之骨架, 藉由申請專利範圍第1 〇項、1 2項、1 4項中任一項所 記載之製造方法所製造,配設在上述第1基板以及第2基 板間,同時,分別在位於上述第2基板側之前端部具有上 述導電性賦予部,以支持作用在第1以及第2基板的大氣 壓負載之多數間隔物。 -31 -15. The method for manufacturing a spacer according to item 14 of the scope of patent application, wherein after the first paste is injected into the through holes, the two ends of each through hole and the two sides of the first paste are The second paste is poured on the end side so as to form a spacer having a conductivity-imparting portion in which a component having conductivity is dispersed at a tip portion. 16. An image display device comprising: a first substrate having a fluorescent surface; and a first substrate having a gap therebetween and disposed opposite to each other, and provided with a plurality of electron sources that emit electrons to excite the fluorescent surface The second substrate; and the second substrate is manufactured by the manufacturing method described in any one of the items 10 to 15 in the patent application scope, and is arranged between the first substrate and the second substrate to support the role of the second substrate. Most of the atmospheric pressure loads on the 1 and 2 substrates are -30- (5) (5) 200414795 spacers. 1 7 · The image display device described in item 16 of the scope of patent application, wherein the device includes a plate provided between the i-th and second substrates and having electron beam passage holes corresponding to most of the electron sources. In the shape of a skeleton, each of the spacers is fixed to the skeleton. 1 ·· An image display device, comprising: a first substrate having a fluorescent surface; and a first substrate having a gap therebetween and disposed opposite to each other, and provided with a plurality of electron sources that emit electrons to excite the fluorescent surface A second substrate; and a plate-like skeleton provided between the first substrate and the second substrate, and having a plurality of electron beam passage holes corresponding to the majority of the electron sources, respectively. It is manufactured by the manufacturing method according to any one of items 2 and 14. It is disposed between the first substrate and the second substrate, and has the above-mentioned conductivity imparting portion at an end portion before the second substrate side. In order to support most of the spacers that are loaded with atmospheric pressure on the first and second substrates. -31-
TW092126511A 2002-09-27 2003-09-25 Image display device, manufacturing method of spacer used for image display device and image display device equipped with spacer manufactured by this method TWI241147B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002283984A JP2004119296A (en) 2002-09-27 2002-09-27 Image display device, manufacturing method of spacer used for image display device and image display device equipped with spacer manufactured by this method

Publications (2)

Publication Number Publication Date
TW200414795A true TW200414795A (en) 2004-08-01
TWI241147B TWI241147B (en) 2005-10-01

Family

ID=32040576

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092126511A TWI241147B (en) 2002-09-27 2003-09-25 Image display device, manufacturing method of spacer used for image display device and image display device equipped with spacer manufactured by this method

Country Status (6)

Country Link
EP (1) EP1544892A1 (en)
JP (1) JP2004119296A (en)
KR (1) KR100691580B1 (en)
CN (1) CN1685463A (en)
TW (1) TWI241147B (en)
WO (1) WO2004030010A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311247A (en) 2003-04-08 2004-11-04 Toshiba Corp Image display device and manufacturing method of spacer assembly used for image display device
CN105700219B (en) * 2015-12-18 2019-09-13 厦门天马微电子有限公司 A kind of colored filter and its manufacturing method, a kind of display panel

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5859502A (en) * 1996-07-17 1999-01-12 Candescent Technologies Corporation Spacer locator design for three-dimensional focusing structures in a flat panel display
JP3187367B2 (en) * 1997-03-31 2001-07-11 キヤノン株式会社 Electronic device and image forming apparatus using the same
CN1282448A (en) * 1997-12-17 2001-01-31 摩托罗拉公司 Field emission device having composite spacer
JP4095195B2 (en) * 1999-02-15 2008-06-04 キヤノン株式会社 Electron beam generator and image forming apparatus
JP2001272926A (en) * 2000-03-23 2001-10-05 Toshiba Corp Spacer assembly of flat display device, flat display device provided with the same, production method of spacer assembly and die used for production of spacer assembly
US6441559B1 (en) * 2000-04-28 2002-08-27 Motorola, Inc. Field emission display having an invisible spacer and method
JP3999942B2 (en) * 2001-02-20 2007-10-31 京セラ株式会社 SUBSTRATE WITH PROJECT MEMBER, ITS MANUFACTURING METHOD, AND IMAGE FORMING APPARATUS
JP2003297265A (en) * 2002-04-03 2003-10-17 Toshiba Corp Image display device and method of manufacturing the same

Also Published As

Publication number Publication date
EP1544892A1 (en) 2005-06-22
KR20050053686A (en) 2005-06-08
CN1685463A (en) 2005-10-19
KR100691580B1 (en) 2007-03-12
TWI241147B (en) 2005-10-01
JP2004119296A (en) 2004-04-15
WO2004030010A1 (en) 2004-04-08

Similar Documents

Publication Publication Date Title
US7042144B2 (en) Image display device and manufacturing method for spacer assembly used in image display device
TWI241147B (en) Image display device, manufacturing method of spacer used for image display device and image display device equipped with spacer manufactured by this method
US7192327B2 (en) Image display device, method of manufacturing a spacer for use in the image display device, and image display device having spacers manufactured by the method
TW200400530A (en) Image display apparatus and its manufacturing method
TW569262B (en) Image display apparatus
TW200303568A (en) Image display device
JP4021694B2 (en) Image display device
KR20040029184A (en) Image display unit
TWI281686B (en) Image display device
TW200401322A (en) Image display device
JP2003123672A (en) Image display device
JP3984102B2 (en) Image display device and manufacturing method thereof
JP2004296107A (en) Image display device and manufacturing method thereof
JP2003257343A (en) Image display
TW200537540A (en) Image display equipment and its manufacturing method
JP2005190789A (en) Image display device
TW200428121A (en) Image display device
US20050104505A1 (en) Image display apparatus and method of manufacturing the same
JP2004303458A (en) Image display device
JP2004214146A (en) Image display device and its manufacturing method
JP2010033746A (en) Flat panel display device
TW200539221A (en) Image display device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees