TW200411824A - Bumping process - Google Patents

Bumping process Download PDF

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Publication number
TW200411824A
TW200411824A TW091137815A TW91137815A TW200411824A TW 200411824 A TW200411824 A TW 200411824A TW 091137815 A TW091137815 A TW 091137815A TW 91137815 A TW91137815 A TW 91137815A TW 200411824 A TW200411824 A TW 200411824A
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TW
Taiwan
Prior art keywords
layer
bump
scope
patent application
item
Prior art date
Application number
TW091137815A
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English (en)
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TWI236093B (en
Inventor
Shyh-Ing Wu
Original Assignee
Advanced Semiconductor Eng
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Publication date
Application filed by Advanced Semiconductor Eng filed Critical Advanced Semiconductor Eng
Priority to TW091137815A priority Critical patent/TWI236093B/zh
Priority to US10/605,345 priority patent/US20040124171A1/en
Publication of TW200411824A publication Critical patent/TW200411824A/zh
Application granted granted Critical
Publication of TWI236093B publication Critical patent/TWI236093B/zh

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    • H01L2924/04953—TaN

Description

200411824 五、發明說明（i) 發明所屬之技術領域 本發明是有關於一種凸塊製程，且特別是有關於一種 能夠確保凸塊可靠度與高分子護層完整性的凸塊製程。 先前技術 ， 覆晶接合技術（Flip Chip Bonding Technology)主要 是利用面陣列（area array)的排列方式，將多個銲墊 (bonding pad)配置於晶片（die)之主動表面（active surface)，並在各個焊墊上形成凸塊（bump)，接著再將晶 片翻面（flip)之後，利用晶片之焊墊上的凸塊分別電性 (electrically)及機械性（mechanicaiiy)連接至基板 (substrate)或印刷電路板（PCB)之表面所對應的^合墊 (mounting pad)。並且，由於覆晶接合技術係可應用於高 接腳數（High Pin Count)之晶片封裝結構，並同時具有縮 小封裝面積及縮短訊號傳輸路徑等多項優點，所以覆晶接 合技術目前已經廣泛地應用在晶片封裝領域。 為了以覆晶接合的方式將晶片配置在基板或印刷電路 板之表面，就先前所述之覆晶接合技術而言，可以預先在 晶片之主動表面的焊墊上形成凸塊。舉例而言，習知之常 見的凸塊製程乃是預先形成一層具有多個開口（〇pening) 之網版（stencil)或感光薄膜（ph〇t〇 nim)於晶片（或曰圓 (wafer))之主動表面上，用以作為一罩幕層（mask)，$這 些開口係可分別暴露出其所對應之烊墊。接著，再利用電 鍵（plating)或印刷（printing)的方式，將銲料（s〇ider) 填入開口及焊墊兩者所圍成的空間内，因而形成一銲料層
10232twf.ptd 200411824
於^個焊墊之上。然後，移除上述之網版或感光薄膜，而 暴露出位於各個焊墊之上的銲料層。之後，迴銲（ref i〇w) 這些銲料層，當這些銲料層冷卻之後，其將分別在其所對 應的焊墊之上形成具有球狀外觀之凸塊。 弟1 A圖至苐1 F圖所繪不為習知凸塊製程對應於晶圓表 層凸塊部份之剖面放大示意圖。首先，請參照第丨A圖，晶 圓100具有 主動表面102、多個焊塾1〇4(於圖中僅繪示一 個）、一保瘦層106與一南分子層，而這些焊墊係配 置於晶圓100之主動表面1〇2之上，且保護層與高分子 層108亦依序配置於晶圓1〇〇之主動表面1〇2之上，並以開 口 110暴露出這些焊墊104。 接著’請參照第1 B圖，於晶圓1 〇 〇之主動表面1 〇 2形成
一凸塊底金屬層（Under Bump Metallurgy layer，UBM layerOl 12，其中此凸塊底金屬層1 12係包括依序形成的黏 著層（adhesion layer)114、阻障層（barrier layer)116 及融合層（wettable layer)118。 接者’請參照第1 C圖，以微影钱刻的技術去除部分的 凸塊底金屬層112至露出高分子層1〇8的表面，以形成凸塊 底金屬層1 1 2 a，其中凸塊底金屬層1 1 2 a至少係位於開口 1 10 中。 接者，凊參照第1D圖’於主動表面102上形成一圖案 化的罩幕層1 20，其中此罩幕層120係具有複數個開口 122(於圖中僅繪示一個），並且開口 122係可以暴露出位在 焊墊104上的凸塊底金屬層112a。
10232twf.ptd 第6頁 200411824 五、發明說明（3) 接著’請參照第1 E圖，於罩幕層1 2 0之開口 1 2 2中，以 網版印刷的方式填入錫膏（s ο 1 d e r p a s t e )層1 2 4 (僅繪示 出其中的一個），並且錫膏層124係覆蓋於凸塊底金屬層 1 1 2 a 上。 接著’請參照第1 F圖，進行一迴焊製程，透過加熱的 過程’使锡膏層1 2 4處在溶融的狀態，而形成類似球體形 狀之凸塊1 2 6。 隶後’凊參照弟1 G圖’將罩幕層1 2 0去除，然後再對 凸塊1 2 6進行一道迴焊製程，如此凸塊丨2 6製作完成，其中 凸塊126係由凸塊底金屬層丨12a及焊料丨24所組成。 然而，在上述的凸塊製程中，錫膏層丨2 4通常係由焊 料粉（solder powder)混合助焊劑（flux)以製成，當在進 行第1 F圖的迴焊製程時，錫膏層丨2 4中的助焊劑會與高分 子層108產生反應，在兩者產生反應後會生成水與二氧化 碳或其他氣體，在經由迴焊製程後，此些水與二氧化碳或 其他氣肢會在凸塊1 2 6中形成氣泡而無法跑出，從而使得 凸塊126中存有氣泡而影響凸塊丨26的可靠度 (reliability) ° 而且’罩幕層1 2 0通常是使用餘刻溶劑加以飯刻去 除，然而，此蝕刻溶劑同樣會攻擊罩幕層丨2 〇下的高分子 層108，因此，在經由去除罩幕層12〇的步驟後，部分的高 分子層1 0 8亦會被去除或破壞而變得不完整，進而降低高 分子層108對晶圓1〇〇的保護能力。 ° 200411824 五、發明說明（4) 因此，本發明的目的是在提供一種凸塊製程，能夠避 免或減少在凸塊製作的過程中在凸塊中產生氣泡，以確保 凸塊的可靠度。 本發明的另一目的是在提供一種凸塊製程，能夠避免 高分子層被蝕刻罩幕層的蝕刻液侵蝕，以確保高分子層的 完整性。 本發明提出一種凸塊製程，用以製作凸塊於一晶圓 上，且此晶圓具有一主動表面，並且晶圓還具有保護層、 高分子層與複數個焊墊，均配置在晶圓之主動表面上，其 中保護層與高分子層以複數個第一開口個別暴露出焊墊， 使凸塊製程係形成一黏著層到晶圓之主動表面上覆蓋焊墊 及高分子層，再於黏著層上依序形成阻障層與融合層。接 著，去除部分的融合層及阻障層，其中殘留之融合層及阻 障層至少位於第一開口上方。然後，於黏著層上形成圖案 化之罩幕層，其中罩幕層具有複數個第二開口 ，並至少暴 露出融合層，其後，進行一印刷製程，以於第二開口中個 別形成錫膏層，再進行迴焊製程，以使錫膏層個別形成凸 塊，之後，去除罩幕層，然後再去除殘留之融合層及阻障 層下方之外的黏著層。 而且，在去除殘留之融合層及阻障層下方之外的黏著 層之後，更包括對凸塊進行一迴焊製程。 並且，其中黏著層之材質例如是鈦或是鋁，而阻障層 之材質例如是錄飢合金，融合層之材質例如是銅。 尚且，當焊墊之材質為鋁時，則凸塊底金屬層係為鋁
10232twf.ptd 第8頁 200411824 五、發明說明（5) /鎳釩合金/銅的複合堆疊層，而當 凸塊底金屬層係為鈦/鎳釩合金/銅 由上述可知·，本發明之凸塊製 之别’尚保留高分子層上方的黏著 在進行迴焊製程時，此黏著層能夠 離開來，從而防止錫膏層中的助焊 應，以確保凸塊的可靠度。 而且’本發明之凸塊製程由於 如’尚保留高分子層上方的黏著層 在以姓刻液蝕刻去除罩幕層時，位 層能夠轉保姓刻液不會侵姓高分子 的完整性。 為讓本發明之上述和其他目的 顯易懂’下文特舉一較佳實施例， 細說明如下： 實施方式： 第2A圖至第2H圖所繪示為依照 凸塊製程對應於晶圓表層凸塊部份 示意圖。 首先，請參照第2A圖，提供一 一主動表面202，且晶圓20 0具有多 中的一個）、一保護層2〇β與一高分 圓200之主動表面202上，並且保護 開口 210暴露出這些焊墊2〇4，其中 焊墊之材質為銅時，則 的複合堆疊層。 、 程由於在進行迴焊製裎 層=未蝕刻去除，因此 將高分子層與錫膏層隔 劑與高分子層產生反 在進行去除罩幕層之 而未蝕刻去除，因此， 於高分子層之上的黏著 層，從而確保高分子層 、特徵、和優點能更明 並配合所附圖式，作詳 本發明一較佳實施例之 之剖面放大的製造流程 晶圓2 0 0，晶圓2 〇 〇具有 個焊墊204(僅繪示出其 子層208，均配置在晶 層206與高分子層並以 保護層2 0 6的材質例如
200411824 五、發明說明（6) 是氮化矽、高分子層2 0 8的材質例如是苯並環丁烯 (benzocyclobutene，BCB)或是聚亞醯胺（p〇lyimide， P I )，並且：t干塾2 0 4的材質例如是|g或是銅。 接著’ a月參知苐2B圖’將一黏著層（adhesion layer) 214形成於晶圓200之主動表面202上，且黏著層214會覆蓋 焊墊204及高分子層208，其中黏著層214的材質例如是 鈦、銘或是鈕等，形成此黏著層2 1 4的方法例如是濺鍍法 (s p u 11 e r i n g )或蒸鑛法（e v a ρ 〇 r a t i ο η )。然後，將一阻障 層（barrier layer)216形成於黏著層214上，其中阻障層 2 1 6的材質例如是鎳飢合金、鈦氮化合物、鈕氮化合物或 是鎳等，形成此阻障層2 1 6的方法例如是濺鑛法、電鑛法 或蒸鐘法。接著，將一融合層（wet table layer )218形成 於阻障層21 6上，其中融合層2 1 8的材質例如是銅，形成此 融合層2 1 8的方法例如是濺鍍法、電鍍法或蒸鍍法。如此 便完成凸塊底金屬層212的製作，其中凸塊底金屬層212係 包括黏著層214、阻障層216及融合層218。 而且，於本發明較佳實施例中，當焊墊2〇4的材質例 如是鋁時，則凸塊底金屬層2 1 2之黏著層2 1 4、阻障層21 6 及融合層2 1 8堆疊結構較佳是由鋁/鎳釩合金/銅所組成， 尚且，當焊墊2〇4的材質例如是鋼時，則凸塊底金屬層21 2 之黏著層2 1 4、阻障層2 1 6及融合層2 1 8堆疊結構較佳是由 鈦/錄飢合金/銅所組成。 接著，請參照第2 C圖，去除部分的融合層2 1 8與阻障 層216至露出黏著層214的表面，以形成融合層21 8a與阻障
10232twf.ptd 第10頁 200411824 五、發明說明（7) 層2 1 6 a ’且融合層2 1 8 a與阻障層2 1 6 a至少係位於開口 2 1 0 的上方。其中去除部分的融合層2 1 8與阻障層2 1 6的方法例 如是在融合層2 1 8上形成圖案化的光阻層（未圖示），再以 光阻層為罩幕姓刻去除光阻層未覆蓋的融合層2 1 8與阻障 層2 1 6 ’然後再去除光阻層，並且，融合層2 1 8銅的触刻劑 例如是由氫氧化銨（amm〇niuin hydroxide)及過氧化氳 (hydrogen peroxide)所組成，或者融合層218銅的餘刻劑 亦可以是由硫酸鉀（K2S〇4)及甘油（glyCer〇i)所組成，而融 合層2 1 8鋼的蝕刻劑還可以是其他已知的化學溶劑。再 者，阻障層216鎳釩合金可以使用硫酸（H2S04)作為蝕刻 劑’並且阻障層2 1 6鎳釩合金亦可以利用稀釋後的麟酸進 行姓刻。 接著’請參照第2D圖，於融合層21 8a上形成圖案化的 罩幕層220，其中此罩幕層220係具有複數個開口222(於圖 中僅繪示一個），並且開口 222係可以暴露出位在焊墊2〇4 上的融合層218a與部分的黏著層214表面。其中此罩幕層 的材質例如是光阻，形成此罩幕層220的方法例如是曰將 :罩幕材料層（未圖示）形成於融合層2 1 8上，然後透過曝 光、顯影等步驟以形成具有開口 222的罩幕層22〇。 接著’凊參照第2E圖，將錫膏（s〇ider paste)填入至 層2，G之開口 222中，以形成錫膏層m。其中锡膏例 〇疋由焊料粉（solder powder)助焊劑（fiux)所組成， 且焊料粉的材質例如是金、錫鉛合金或是無鉛的金屬等’， 且形成的方法例如是使用印刷（Printing)的方式，將锡膏
200411824 五、發明說明⑻ ' --- 填入至罩幕層220之開口222中。 接著，凊參照第2 F圖，進行一迴焊製程，透過加熱的 過程，使錫膏層224處在溶融的狀態，而形成類似球體形 狀之凸塊22 6。由於在此迴焊製程中，在高分子層2〇8上的 黏著層214尚未被去除，因此能夠避免高分子層2〇8與錫膏 層224中的助焊劑產生反應而產生氣泡。 ' 接著’請參照第2G圖，將黏著層214上的罩幕層220去 除其中去除罩幕層2 2 0的方法例如是使用餘刻液以將罩 幕層220蝕刻去除。由於在此步驟中，在高分子層2〇8上的 黏著層214尚未去除，因此，去除罩幕層“ο用的蝕刻液並 不會攻擊到高分子層208，從而能夠保持高分子層208的完 整性。 最後’清參照第2 Η圖’將暴露於外之黏著層2 1 4去 除，而僅殘留位在阻障層21 6a下之黏著層214以形成黏著 層214a ’同時晶圓200之高分子層208會暴露於外。其中去 除部分黏著層2 1 4的方法例如是使用蝕刻液蝕刻的方法， 亚且所選用的蝕刻液較佳為不與凸塊2 2 6產生反應者，以 避免在迴焊製程時與焊料產生反應。然後，對凸塊226再 進行一道迴焊製程，以使凸塊226的結構較為完整，如此 便完成凸塊的製程。 而且，本發明的凸塊底金屬層，並非僅限定於三層 點著層、阻障層及融合層），亦可以是由其他數目的導電 二所組成，例如是四層，其金屬層結構例如是由鉻層/鉻 鋼合金層/銅層/銀層·，亦可以是兩層，其下層的金屬層。結 第12頁 200411824 五、發明說明（9) 構比如是鈦鎢合金 層、鎳層·或金層等 並且，本發明 並非限定於蝕刻至 屬層中不是融合層 用的餘刻液不會與 第2C圖的步驟中留 係可以將凸塊底金 層與不包含融合層 驟申移除第二凸塊 此外，本發明 動表面上，亦可以 (redistribution 路層上，重配置線 知，在此便不再加 綜上所述，本 1. 本發明之凸 留高分子層上方的 製程時，此黏著層 而防止錫膏層中的 塊的可靠度。 2. 本發明之凸 保留高分子層上方 刻液蝕刻去除罩幕 層或鈦，而上層的金屬層結構比如是銅 〇 於第2 C圖蝕刻凸塊底金屬層2 1 2的步驟 黏著層214表面為止，只要在凸塊底金 的金屬層（黏著層、阻障層），並且所使 後續形成的凸塊產生反應者，都能夠於 :以保護其下的高分子層。I體而言， 視作包含融合層的第二凸塊底金屬 、 凸塊底金屬層，而於第2C圖的步 底金屬層。 ,:塊並非僅限於直接製作在晶圓之主 曰日圓上製作完重配置線路層 之後，再將凸塊製作到重配置線 路層的製作’乃為熟習該項技藝者庳 以贅述。 只议衣芩您 發T至少具有下列優點： 塊，私，由於在進行迴焊製程之前尚保 f著層，未蝕刻去除，因此在進行迴焊 月b夠將同分子層與錫膏層隔離開來，從 助烊劑與高分子層產生反應，以確保凸 塊衣^，由於在進行去除罩幕層之前尚 的，著層而未*❹除，因⑯，在以# 層日守，位於高分子層之上的黏著層能夠
200411824 五、發明說明（ίο) 確保蝕刻液不會侵蝕高分子層，從而確保高分子層的完整 性。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍内，當可作些許之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。
10232twf.ptd 第14頁 200411824 圖式簡單說明 第1 A圖至第1 G圖所繪示為習知凸塊製程對應於晶圓表 層凸塊部份之剖面放大的製造流程示意圖；以及 第2A圖至第2H圖所繪示為依照本發明一較佳實施例之 凸塊製程對應於晶圓表層凸塊部份之剖面放大的製造流程 示意圖。 圖式標示說明： 1 0 0、2 0 0 :晶圓 102、202 ··主動表面 1 0 4、2 0 4 :焊墊 1 0 6、2 0 6 :護層 1 08、2 08 :高分子層 110、12 2、210、2 2 2 :開口 112、112a、212、212a :凸塊底金屬層 1 14、214、214a :黏著層 116、216、216a :阻障層 1 18、218、218a :融合層 120、220 :光阻層 124、224 :錫膏層 1 2 6、2 2 6 :凸塊
10232twf.ptd 第15頁

Claims (1)

  1. 200411824 六、申請專利範圍 1 · 一種凸塊製程，用以製作複數個凸塊於一晶圓上， 且該晶圓具有一主動表面，並且該晶圓還具有一保護層、 一高分子層與複數個焊墊，均配置在該晶圓之該主動表面 上，其中該保護層與該高分子層以複數個第一開口個別暴 露出該些焊墊，該凸塊製程包括： 形成一黏著層到該晶圓之該主動表面上，覆蓋該些焊 墊及該高分子層； 形成一阻障層到該黏著層上； 形成一融合層到該阻障層上； 去除部分的該融合層及該阻障層，其中殘留之該融合 層及該阻障層至少位於該些第一開口上方； 於該黏著層上形成圖案化之一罩幕層，其中該罩幕層 具有複數個第二開口，並至少暴露出該融合層； 進行一印刷製程，以於該些第二開口中個別形成一錫 膏層； 進行一第一迴焊製程，使該些錫膏層個別形成一凸 塊； 去除該罩幕層；以及 去除殘留之該融合層及該阻障層下方之外的該黏著 _ 層。 2. 如申請專利範圍第1項所述之凸塊製程，其中更包 括於去除殘留之該融合層及該阻障層下方之外的該黏著層 後，對該凸塊進行一第二迴焊製程。 3. 如申請專利範圍第1項所述之凸塊製程，其中該黏
    10232twf.ptd 第16頁 200411824 六、申請專利範圍 著層之材質包括鈦與鋁所組之族群其中之一。 4 ·如申請專利範圍第1項所述之凸塊製程，其中去除 該黏著層的方法包括使用一蝕刻液蝕刻去除該黏著層。 5 ·如申請專利範圍第4項所述之凸塊製程，其中去除 該黏著層之該蝕刻液係不與該凸塊產生反應。 6. 如申請專利範圍第1項所述之凸塊製程，其中該阻 障層之材質包括鎳飢合金。 7. 如申請專利範圍第1項所述之凸塊製程，其中該融 合層之材質包括銅。 8. 如申請專利範圍第1項所述之凸塊製程，其中該高 分子層的材質包括苯並環丁稀（56112〇〇7(：1〇131^61^，806) 與聚亞隨胺（ρ ο 1 y i m i d e，P I )所組之族群其中之一。 9. 如申請專利範圍第1項所述之凸塊製程，其中該些 焊墊之材質包括選自銅與鋁所組之族群其中之一。 1 0.如申請專利範圍第9項所述之凸塊製程，其中當該 些焊墊之材質為鋁，該凸塊底金屬層係為鋁/鎳釩合金/銅 的複合堆疊層。 1 1.如申請專利範圍第9項所述之凸塊製程，其中當該 些焊墊之材質為銅，該凸塊底金屬層係為鈦/鎳釩合金/銅 的複合堆疊層。 1 2.如申請專利範圍第1項所述之凸塊製程，其中該錫 膏層包括由焊料粉（so 1 der powder )與助焊劑（f 1 ux )所組 成。 1 3. —種凸塊製程，用以製作複數個凸塊於一晶圓之
    10232twf.ptd 第17頁 200411824 六、申請專利範圍 一主動表面上，該凸塊製程包括： 於該晶圓之該主動表面上形成一第一凸塊底金屬層； 於該第一凸塊底金屬層上形成一第二凸塊底金屬層； 去除部分的該第二凸塊底金屬層； 形成圖案化的一罩幕層在該第一凸塊底金屬層上，並 且該罩幕層具有複數個開口 ，該些開口至少暴露出該第二 凸塊底金屬層； 以一印刷製程於該些開口中填入一錫膏層； 進行一第一迴焊製程，以使該錫膏層形成一凸塊； 去除殘留之該第二凸塊底金屬層下方之外的該第一凸 塊底金屬層；以及 對該凸塊進行一第二迴焊製程。 1 4.如申請專利範圍第1 3項所述之凸塊製程，其中該 第二凸塊底金屬層至少包括一融合層。 1 5.如申請專利範圍第1 4項所述之凸塊製程，其中該 融合層之材質包括銅。 1 6.如申請專利範圍第1 4項所述之凸塊製程，其中形 成該第二凸塊底金屬層到該第一凸塊底金屬層上的步驟包 括： 形成一阻障層到該第一凸塊底金屬層上；以及 形成該融合層到該阻障層上。 1 7.如申請專利範圍第1 6項所述之凸塊製程，其中該 阻障層之材質包括鎳釩合金。 1 8.如申請專利範圍第1 3項所述之凸塊製程，其中該
    10232(wf.ptd 第18頁 200411824 六、申請專利範圍 第一凸塊底金屬層包括一黏著層。 1 9 ·如申請專利範圍第1 8項所述之凸塊製程，其中該 黏著層的材質包括‘鈦以及鋁所組之族群其中之一。 2 0.如申請專利範圍第1 9項所述之凸塊製程，其中去 除該黏著層的方法包括使用一蝕刻液蝕刻去除該黏著層。 2 1 .如申請專利範圍第1 8項所述之凸塊製程，其中去 除該黏著層之該蝕刻液係不與該凸塊產生反應。 2 2.如申請專利範圍第1 3項所述之凸塊製程，其中該 錫膏層包括由焊料粉（s ο 1 d e r ρ 〇 w d e r )與助焊劑（f 1 u X )所 組成。
    10232iwf.ptd 第19頁
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