TWI236093B - Bumping process - Google Patents

Bumping process Download PDF

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Publication number
TWI236093B
TWI236093B TW091137815A TW91137815A TWI236093B TW I236093 B TWI236093 B TW I236093B TW 091137815 A TW091137815 A TW 091137815A TW 91137815 A TW91137815 A TW 91137815A TW I236093 B TWI236093 B TW I236093B
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TW
Taiwan
Prior art keywords
layer
bump
item
scope
bottom metal
Prior art date
Application number
TW091137815A
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English (en)
Other versions
TW200411824A (en
Inventor
Shyh-Ing Wu
Original Assignee
Advanced Semiconductor Eng
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Filing date
Publication date
Application filed by Advanced Semiconductor Eng filed Critical Advanced Semiconductor Eng
Priority to TW091137815A priority Critical patent/TWI236093B/zh
Priority to US10/605,345 priority patent/US20040124171A1/en
Publication of TW200411824A publication Critical patent/TW200411824A/zh
Application granted granted Critical
Publication of TWI236093B publication Critical patent/TWI236093B/zh

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

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1236093 五、發明說明（1) 發明所屬之技術領域 本發明是有關於一種凸塊製程，且特別是有關於一種 能夠確保凸塊可靠度與高分子護層完整性的凸塊製程。 先前技術 覆晶接合技術（Flip Chip Bonding Technology)主要 是利用面陣列（area array )的排列方式，將多個録墊 (bonding pad)配置於晶片（die)之主動表面（ active surface) ’並在各個焊塾上形成凸塊（bump)，接著再將晶 片翻面（f 1 i p )之後，利用晶片之焊墊上的凸塊分別電性 (electrically)及機械性（mechanically)連接至基板 (substrate)或印刷電路板（PCB)之表面所對應的接合墊 (mounting pad)。並且，由於覆晶接合技術係可應用於高 接腳數（High Pin Count)之晶片封裝結構，並同時具有縮 小封瓜面積及縮短说5虎傳輸路徑等多項優點，所以覆晶接 合技術目前已經廣泛地應用在晶片封裳領域。 為了以覆晶接合的方式將晶片酉己詈 板之表面，就先前所述之覆晶接合技術 晶片之主動表面的焊墊上形成凸塊。舉 見的凸塊製程乃是預先形成一層具有多 之網版（stencil)或感光薄膜（ph〇t〇 fi (wafer))之主動表面上，用以作為—罩 些開口係可分別暴露出其所對應之烊墊 鍍（plating)或印刷（printing)的方式 填入開口及焊墊兩者所圍成的空間内， 在基板或印刷電辟 而言，可以預先名 例而言，習知之, 個開口（opening) 1 m)於晶片（或晶B 幕層（mask)，而 。接著，再利用灣 ’將銲料（s ο 1 d e r ) 因而形成一録料肩
1236093 五、發明說明（2) "" 於^個力干墊之上。然後，移除上述之網版或感光薄膜，而 暴路出位於各個焊塾之上的鲜料層。之後，迴銲（『㊀f 1 〇 * ) 這些鲜料層’當這些銲料層冷卻之後，其將分別在其所對 應的¥墊之上形成具有球狀外觀之凸塊。 第1 A圖至第1 F圖所繪示為習知凸塊製程對應於晶圓表 層凸塊部份之剖面放大示意圖。首先，請參照第丨A圖，晶 圓100具有一主動表面1〇2、多個焊墊1〇4(於圖中僅繪示一 個）、一保瘦層106與一高分子層，而這些焊墊係配 置於晶圓100之主動表面1〇2之上，且保護層丨〇6與高分子 層108亦依序配置於晶圓1〇〇之主動表面1〇2之上，並以開 口 110暴露出這些燁塾。 接著，請參照第丨B圖，於晶圓丨〇 〇之主動表面丨〇 2形成
一凸塊底金屬層（Under Bump Metallurgy layer，UM layer)112，其中此凸塊底金屬層n2係包括依序形成的黏 著層（adhesion layer)114、阻障層（barrier layer)iig 及融合層（wettable layer)118。 接著，請參照第1 C圖，以微影蝕刻的技術去除部分的 凸塊底金屬層112至露出高分子層108的表面，以形成凸塊 底金屬層1 1 2 a，其中凸塊底金屬層1 1 2 a至少係位於開口 110中。 、歼 接著，請參照第1 D圖，於主動表面1 0 2上形成_圖$ 化的罩幕層丨2〇，其中此罩幕層1 20係具有複數個開口° * 122(於圖中僅繪示一個），並且開口 122係可以異♦ ^ > |路出位在 焊墊1 0 4上的凸塊底金屬層1 1 2 a。
1236093 五、發明說明（3) 接著，請參照第1 E圖，於罩幕層1 2 0之開口 1 2 2中，以 網版印刷的方式填入錫膏（solder paste)層124(僅緣示 出其中的一個），並且錫膏層124係覆蓋於凸塊底金屬層 1 12a 上。 接著，請參照第1 F圖，進行一迴焊製程，透過加熱的 過程，使錫膏層1 2 4處在溶融的狀態，而形成類似球體形 狀之凸塊1 2 6。
最後，請參照第1 G圖，將罩幕層1 2 0去除，然後再對 凸塊1 2 6進行一道迴焊製程，如此凸塊丨2 6製作完成，其中 &塊126係由凸塊底金屬層丨12a及焊料124所組成。 然而，在上述的凸塊製程中，錫膏層1 24通常係由焊 料粉（solder powder)混合助焊劑（flux)以製成，當在進 行第1 F圖的迴焊製程時，錫膏層丨2 4中的助焊劑會與高分 子層108產生反應’在兩者產生反應後會生成水與二氧化 石厌或其他氣體，在經由迴焊製程後，此些水與二氧化碳或 其他氣體會在凸塊1 2 6中形成氣泡而無法跑出，從而使得 凸塊1 2 6中存有氣泡而影響凸塊丨2 6的可靠度 (reliability) °
而且’罩幕層1 2 〇通常是使用蝕刻溶劑加以蝕刻去 除’然而’此蝕刻溶劑同樣會攻擊罩幕層丨2 〇下的高分 層108，因此，在經由去除罩幕層120的步驟後，部分的 刀子層108亦會被去除或破壞而變得不完整，進而降低1 分子層1 0 8對晶圓1 〇 〇的保護能力。 一「 發明定
10232t.wf.ptd 1236093 五、發明說明（4) =此’本發明的目的是在提供一種 免t減少在凸塊製作的過程中在凸塊中產生；Ϊ 凸塊的可靠度。 7生王乳/包 :明的另一目的是在提供一種凸塊製程， 完整性。 9的蝕刻液钕蝕，以確保高 本發明提出一藉Λ 杂丨 ^ ^ 禋凸塊製程，用以製作凸塊 上，且此Β曰圓具有一主動表面，並且晶圓呈有 高分子層與複數個焊塾，均配置在晶圓之主動^ 中保4層與尚分子層以複數個第一開口個 : 使讓程係形成-黏著層到晶圓之主動表；： 及南分子層，再於黏著層上依序形成阻障層盘融 著，去除部分的融合層及阻障層，： 障層至少位於第一開口上方。然後，於黏著 化之罩ί二’ Ϊ中罩幕層具有複數個第二開二， 露出融合^其後，進行_印刷製程， 二 別形成錫賞層，再進行泡、t曰制 一 嫂，之後，去干製私，以使錫膏層個 鬼 罩幕層，然後再去除殘留之％人 層下方之外的黏著層。 化W之融合 ^且审Ϊ去除殘留之融合層及阻障声下方之 層之後，更包括對凸塊進行一迴焊^層下方之 並且？中黏著層之材質例如 之材質例如是鎳釩合金，融合声或疋鋁， 尚且，當焊墊之铋 a材貝例如是銅 材貝為鋁時，則凸塊底金屬 第8頁 ，能夠避 ，以確保 能夠避免 分子層的 一晶圓 保護層、 面上，其 出焊墊， 覆蓋焊塾 合層。接 合層及阻 形成圖案 並至少暴 開口中個 別形成凸 層及阻障 外的黏著 而阻障層 層係為ί呂 1236093 五、發明說明（5) 焊墊之材質為銅時，則 的複合堆疊層。 程由於在進行迴焊製程 層，未蝕刻去除，因此 將高分子層與錫膏層隔 劑與高分子層產生反 在進行去除罩幕層之 而未飿刻去除，因此， 於高分子層之上的黏著 層’從而確保高分子層 、特徵、和優點能更明 並配合所附圖式，作詳 本發明一較佳實施例之 之剖面放大的製造流程 晶圓2 0 〇，晶圓2 0 0具有 個焊墊204 (僅繪示出其 子層2 0 8，均配置在晶 /鎳釩合金/銅的複合堆疊層，而當 凸塊底金屬層係為鈦/鎳釩合金/鋼 二由上述可知，本發明之凸塊製 之岫，尚保留高分子層上方的黏著 在進行迴焊製程時，此黏著層能夠 離開來，從而防止錫膏層中的助烊 應，以碟保凸塊的可靠度。 二而且’本發明之凸塊製程由於 蝻，尚保留鬲分子層上方的黏著層 在以蝕刻液蝕刻去除罩幕層時，位 層能夠確保飯刻液不會侵蝕高分子 的完整性。 為讓本發明之上述和其他目的 顯易懂，下文特舉一較佳實施例， 細說明如下： 實施方式： 第2A圖至第2H圖所繪示為依照 凸塊衣程對應於晶圓表層凸塊部份 不意圖。 首先，請參照第2A圖，提供一 一主動表面202，且晶圓2〇〇具有多 中的一個）、一保護層2〇6與一高分 圓200之主動表面202上，並且保護層206與高分子層並以 開口 2 1 0暴露出這些焊墊2 〇 4，其中保護層2 〇 6的材質例如
10232t.wf.ptd 第9頁 1236093 五、發明說明（6) 疋氣化石夕、高分子層2 0 8的材質例如是苯並環丁浠 (benzocyclobutene，BCB)或是聚亞醯胺（p〇lyimide， P I )，並且焊墊2 0 4的材質例如是鋁或是銅。 接著’清參照弟2B圖’將一黏著層（adhesion layer) 214形成於晶圓200之主動表面202上，且黏著層214會覆蓋 焊墊2 0 4及高分子層2 0 8，其中黏著層2 1 4的材質例如是 鈦、鋁或是短等，形成此黏著層2 1 4的方法例如是濺鑛法 (sputtering)或条鑛法（evaporation)。然後，將一阻障 層（barrier layer)216形成於黏著層214上，其中阻障層 2 1 6的材質例如是鎳釩合金、鈦氮化合物、鈕氮化合物或 是鎳等，形成此阻障層2 1 6的方法例如是濺鍍法、電鍍法 或蒸鍍法。接著，將一融合層（wettaMe layer)2l8形成 於阻障層2 1 6上，其中融合層2丨8的材質例如是銅，形成此 融合層218的方法例如是濺鍍法、電鍍法或蒸鍍法。如此 便完成凸塊底金屬層212的製作，其中凸塊底金屬層212係 包括黏著層2 1 4、阻障層2 1 6及融合層2 1 8。 曰而且，於本發明較佳實施例中，當焊墊2〇4的材質例
如是鋁時，則凸塊底金屬層2丨2之黏著層2丨4、阻 2 U 及融合層2 1 8堆疊結構較佳是由鋁/鎳釩合金/鋼所組成， 尚且，當焊墊204的材質例如是銅時，則凸塊底屬 之黏著層2U、阻障層216及融合層218堆_較= 鈦/鎳釩合金/鋼所組成。 再孕乂佺疋由 Ί青參照第託圖，去除部分的融合層218與阻障 層2 1 6至路出襄占萎展91/|人人士 γ . ®黏者層214的表面，以形成融合層218&與阻汚
10232t.wf ,pt.d 第10頁 1236093 五、發明說明（7) 層216a，且融合層218a與阻障層216a至少係位於開口以〇 的上方。其中去除部分的融合層2 1 8與阻障層2 1 β的方法 如是在融合層2 1 8上形成圖案化的光阻層（未圖示），再、歹1 光阻層為罩幕钱刻去除光阻層未覆蓋的融合層2 1 8與阻ρί 層216/然〃後^再去除光阻層，並且，融合層以^銅的蝕刻早劑 例如疋由氫氧化錢（ammonium hydroxide)及過氧化氣 (hydrogen per〇xide)所組成，或者融合層218銅的蝕刻劑 =可以疋由琉酸鉀（ISO4)及甘油（glycer〇1)所組成，而融 合層2 1 8鋼的蝕刻劑還可以是其他已知的化學溶劑。再网 =，阻障層216鎳釩合金可以使用硫酸^^〜）作為蝕刻 f 並且阻卩早層2 1 6鎳飢合金亦可以利用稀釋後的嶙酸 行餘刻。 < 置篡f著’請參照第2D圖’於融合層2 1 8a上形成圖案化的 t^i22 0，其中此罩幕層22〇係具有複數個開口 2 2 2 (於圖 僅f示一個），並且開口 222係可以暴露出位在悍墊2〇4 j 0的岫合^層2 1 8 &與部分的黏著層2丨4表面。其中此罩幕層 一的材質例如是光阻，形成此罩幕層22〇的方法例如是曰將 料層（未圖示）形成於融合層218上，然後透過曝 、, 顯衫等步驟以形成具有開口 2 2 2的罩幕層2 2 0。 接著，請參照第2E圖，將錫f(s〇ider paste)填入至 如是層2f〇,之開口 2 22中，以形成錫膏層224。其中錫膏例 且二；,料粉（solder P〇wder)助焊劑（fiux)所組成，並 且带料私的材質例如是金、錫鉛合金或是無鉛的金屬等， 成的方法例如是使用印刷（P r i n t i n g)的方式，將錫膏
1236093
填入至罩幕層220之開口 222中。 接著，請參照第2 F圖，進行一迴焊製程，透過加熱的 過程，使錫貧層2 2 4處在溶融的狀態，而形成類似球體形 狀之凸塊226。由於在此迴焊製程中，在高分子層2〇8上的 黏著層214尚未被去除，因此能夠避免高分子層2〇8與錫膏 層2 2 4中的助焊劑產生反應而產生氣泡。 接著’請參照第2G圖，將黏著層214上的罩幕層220去 除’其中去除罩幕層2 2 0的方法例如是使用名虫刻液以將罩 幕層2 2 0蝕刻去除。由於在此步驟中，在高分子層2 〇 8上的 黏著層2 1 4尚未去除，因此，去除罩幕層2 2 〇用的蝕刻液並 不會攻擊到高分子層20 8，從而能夠保持高分子層2〇8的完 整性。 最後’請參照第2 Η圖，將暴露於外之黏著層2丨4去 除，而僅殘留位在阻障層2 1 6a下之黏著層2 1 4以形成黏著 層214a，同時晶圓2〇〇之高分子層2〇8會暴露於外。其中去 除部分黏著層2 1 4的方法例如是使用蝕刻液蝕刻的方法， 亚且所選用的姓刻液較佳為不與凸塊226產生反應者，以 避免在迴焊製程時與焊料產生反應。然後，對凸塊22β再 進行一道迴燁製程，以使凸塊22 6的結構較為完整，如此 便完成凸塊的製程。 而且，本發明的凸塊底金屬層，並非僅限定於三層 (黏著層、、阻障層及融合層），亦可以是由其他數目^ ^電 層所組成，例如是四層，其金屬層結構例如是由鉻層/鈐 銅合金層/銅層/銀層；亦可以是兩層，其下層的金屬層^
10232twf.ptd 第12頁 1236093 五 、發明說明（9) 構比如是鈦鎢合金層或鈦， 層、錄層或金層等。 而上層的金屬層結構比如是銅 並非限定於蝕刻至黏著屑'"蝕刻凸塊底金屬層2 1 2的步驟 屬層中不是融合層的金』表面為止，只要在凸塊底金 用的蝕刻液不會與後續形二黏著層、阻障層），並且所使 第2 C圖的步驟中留下以 ^凸塊產生反應者，都能夠於 係可以將凸塊底金屬層視;：的高分子層。，體而言， 層與不包含融合層㈣第虫合層的第二凸塊底金屬 驟中移除第二凸塊底金屬：塊底金屬層’而於第2C圖的步 叙矣二’ t Ϊ : ί凸塊並非僅限於直接製作在晶圓之主 動表面上，亦可以在晶圓上製作完重配置線路層 (redistribution layer)之後，再將凸塊製作^重配置 路層上，重配置線路層的製作，乃為熟習該項技藝者應 知，在此便不再加以資述。 綜上所述，本發明至少具有下列優點·· 1 ·本發明之凸塊製程，由於在進行迴焊製程之前尚保 留高分子層上方的黏著層而未蝕刻去除，因此在進行迴焊 製程時’此黏著層能約將高分子層與錫膏層隔離開來，Z 而防止錫膏層中的助焊劑與高分子層產生反應，以確保$ 塊的可靠度。 2·本發明之凸塊製程，由於在進行去除罩幕層之前尚 保留高分子層上方的黏著層而未蝕刻去除，因此，在以飯 刻液蝕刻去除罩幕層時，位於高分子層之上的黏著層能夠
1236093 五、發明說明（10) 確保蝕刻液不會侵蝕高分子層，從而確保高分子層的完整 性。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍内，當可作些許之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。
10232t.wf.ptd 第14頁 1236093 圖式簡單說明 第1 A圖至第1 G圖所繪示為習知凸塊製程對應於晶圓表 層凸塊部份之剖面放大的製造流程示意圖；以及 第2 A圖至第2 Η圖所繪示為依照本發明一較佳實施例之 凸塊製程對應於晶圓表層凸塊部份之剖面放大的製造流程 示意圖。 圖式標示說明 100 102 104 106 108 110 112 114 116 118 120 124 126 200 202 204 206 208 122 112a 214 216 218 220 224 226 晶圓 主動表面 焊墊 護層 高分子層 210 ^ 222 >212 214a 216a 218a 光阻層 錫膏層 凸塊 開口 212a :凸塊底金屬層 黏著層 阻障層 融合層
10232t.wf. ptd 第15頁

Claims (1)

1236093 六、申請專利範圍 1 · 一種凸塊製程，用 且該晶圓具有一主動表面 個焊塾 與該高 凸塊製 到該晶 一高分子層 上，其中該 露出該些焊 形成一 塾及該南分 形成一 形成一 去除部 層及該阻障 於該黏 具有複數個 進行 與複數 保護層 墊，該 黏著層 子層； 阻障層 融合層 分的該 層至少 著層上 第二開 印刷製 到該黏 到該阻 融合層 位於該 形成圖口 ，並 程，以 以製作複數個凸塊於一晶圓上， ，並且該晶圓還具有一保護層、 ，均配置在該晶圓之該主動表面 分子層以複數個第一開口個別暴 程包括： 圓之該主動表面上，覆蓋該些焊 著層上； 障層上； 及該阻障層，其中殘留之該融合 些第一開口上方； 案化之一罩幕層，其中該罩幕層 至少暴露出該融合層； 於該些第二開口中個別形成一錫 膏層； 進行一第一迴焊製程，使該些錫膏層個別形成一凸 塊； 去除該 去除殘 層。 2 ·如申 括於去除殘 後，對該凸 3.如申 罩幕層；以及 留之該融合層及該阻障層下方之外的該黏著 請專利範圍第1項所述之凸塊製程，其中更包 留之該融合層及該阻障層下方之外的該黏著層 塊進行一第二迴焊製程。 請專利範圍第1項所述之凸塊製程，其中該黏
10232twf, pt.d 第16頁 ^36093 申請專利範圍---〜____ 4·如二is?鋁所乡且之族群其中之 著 該黏著層t明專利範圍第丨項所述之凸塊製程，其中去除 5 Γ 士方法包括使用〜蝕刻液蝕刻去除該黏著層。 其中去除 其中該阻 其中該融 該翻著利範圍第4項所述之凸塊製程… 6,如申二二刻，係不與該巧塊產生反應° 障層之材拼=利範圍第1項所述之凸塊製程 材貝包括鎳飢合金。 合層之！11凊專利範圍第1項所述之凸塊製程 曰之材質包括銅。 分子® t申請專利範圍第1項所述之凸塊製程，其中該高 、材貝包括本並環丁稀（匕6112：〇(：^(：：1〇|311七€1^，8〇6) 與聚亞醯胺（P0lyimide，ΡΙ〕所組之族群其中之一。 9 ·如1請專利範圍第1項所述之凸塊製程，其中該些 焊蟄之材貝包括選自銅與I呂所組之族群其中之一。 1 0 ·如申睛專利範圍第9項所述之凸塊製程，其中當該 些焊墊之材質為銘’該凸塊底金屬層係為鋁/鎳釩合金/銅 的複合堆疊層。 1 1 ·如申請專利範圍第9項所述之凸塊製程，其中當該 些焊墊之材質為銅，該凸塊底金屬層係為鈦/鎳釩合金/銅 的複合堆疊層。 1 2 ·如申睛專利範圍第1項所述之凸塊製程，其中該錫 膏層包括由焊料粉（so 1 der powder )與助焊劑（f 1 ux )所組 成。 1 3 · —種凸塊製程’用以製作複數個凸塊於一晶圓之
l〇232t.wf .ptd 第17頁 1236093 ^：、申請專利範圍 一主動表面上，該凸塊製程包括： 於該晶圓之該主動表面上形成一第一凸塊底金屬層； 於該第一凸塊底金屬層上形成一第二凸塊底金屬層； 去除部分的該第二凸塊底金屬層； 形成圖案化的一罩幕層在該第一凸塊底金屬層上，並 且該罩幕層具有複數個開口，該些開口至少暴露出該第二 凸塊底金屬層； 以一印刷製程於該些開口中填入一錫膏層； 進行一第一迴焊製程，以使該錫膏層形成一凸塊； 去除殘留之該第二凸塊底金屬層下方之外的該第一凸 塊底金屬層；以及 對該凸塊進行一第二迴焊製程。 1 4.如申請專利範圍第1 3項所述之凸塊製程，其中該 第二凸塊底金屬層至少包括一融合層。 1 5.如申請專利範圍第1 4項所述之凸塊製程，其中該 融合層之材質包括銅。 1 6.如申請專利範圍第1 4項所述之凸塊製程，其中形 成該第二凸塊底金屬層到該第一凸塊底金屬層上的步驟包 括： 形成一阻障層到該第一凸塊底金屬層上；以及 形成該融合層到該阻障層上。 1 7.如申請專利範圍第1 6項所述之凸塊製程，其中該 阻障層之材質包括鎳釩合金。 1 8.如申請專利範圍第1 3項所述之凸塊製程，其中該
10232t.wf.ptd 第18頁 1236093 六、申請專利範圍 第一凸塊底金屬層包括一黏著層。 1 9 ·如申請專利範圍第1 8項所述之凸塊製程，其中該 黏著層的材質包括鈦以及鋁所組之族群其中之一。 2 〇 ·如申請專利範圍第1 9項所述之凸塊製程，其中去 除該黏著層的方法包括使用一蝕刻液蝕刻去除該黏著層。 2 1 ·如申請專利範圍第1 8項所述之凸塊製程，其中去 除該黏著層之該蝕刻液係不與該凸塊產生反應。 2 2 ·如申請專利範圍第1 3項所述之凸塊製程，其申該 錫膏層包括由焊料粉（s ο 1 d e r ρ 〇 w d e r )與助焊劑（f 1 u X )所 組成。
10232twf.ptd 第19頁
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