TW200410926A - Novel thioether derivatives - Google Patents

Novel thioether derivatives Download PDF

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TW200410926A
TW200410926A TW093102737A TW93102737A TW200410926A TW 200410926 A TW200410926 A TW 200410926A TW 093102737 A TW093102737 A TW 093102737A TW 93102737 A TW93102737 A TW 93102737A TW 200410926 A TW200410926 A TW 200410926A
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Taiwan
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group
polyimide
acid
dendrimer
electrode
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TW093102737A
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Chinese (zh)
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TWI241287B (en
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Hideki Miki
Tatsuo Nakahama
Shiyoshi Yokoyama
Shinro Mashiko
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Comm Res Lab Independent Admin
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C321/00Thiols, sulfides, hydropolysulfides or polysulfides
    • C07C321/24Thiols, sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G83/00Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00
    • C08G83/002Dendritic macromolecules
    • C08G83/003Dendrimers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G75/00Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen, or carbon in the main chain of the macromolecule
    • C08G75/02Polythioethers
    • C08G75/0204Polyarylenethioethers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L81/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
    • C08L81/02Polythioethers; Polythioether-ethers

Abstract

This invention provides a novel dendrimer compound for using as materials such as memory switch mechanism, which is immediately illuminated by light or electric energy. The dendrimer compound of this invention comprising the essential constitutive elements: unit 1 represented by the following formula: [wherein, ring A represents a homocyclic or heterocyclic 6-membered ring] to form the dendrimer structure and surface functional groups.

Description

200410926 玖、發明說明: 【發明所屬之技術領域】 本發明係關於新穎硫醚衍生物、其製造方法及用途, 特別係有關含硫之樹枝狀體(Dendrimer)及其合成中間 體。 【先前技術】 樹枝狀體化合物係具有特異之高分子構造,可期望使 用於廣泛之範疇。樹枝狀體化合物具有中心之核(c〇re)與 規則端正之分枝單元(Unit)所重複構成之樹枝狀構造以及 配置在最外層之表面官能基展開於三次元之特異化學結 構,在例如奈米(Nano)科學、通信科學、電子材料科學、 醫學、藥學、生物學、界面科學、材料科學等之範疇中, 正多方面地研究(VCH出版公司1996年發行之「樹枝狀分 子」(Dendritic Molecules),1998年6月現代化學第2〇至 4〇頁「樹枝狀體之分子設計」,「樹枝狀體之多彩機能」, ^ 47 4 11 ^ ^(1998 Γ 料之應用」)。樹枝狀體科學從約1 99〇年 卞Y俊登場,研究 數正不斷增加,可謂最新之科學。 〜不」用(特開平 33063 1)、太陽電池、電子照相感光體方面之利用( η’δ71)、電子材料方面之利用(特開平ΐκΠΐ8 、幵 晶方面之利用(特開2〇〇〇·264965)、塗料、油黑方 (特開平1 1 -1 4 0 1 8 0)、普φ 與匕4七 之牙 )!先性樹脂板方面之利用(特開伞 ]1 - 3 2 3 3 2 4)、檢驗成定吾古、[ 鉍及疋里方法方面之利用(特開平 3H210D01 200410926 21 8494)、生物感應調節劑方面之利用㈠寺開平"ms 等各種產業上可利用之發明。 【發明内容】 (發明所欲解決之技術問題) 本毛月之σ果題,為提供具有優良機能之新賴樹枝狀體 化合物以及其製造上所用之新穎合成中間體。 更八版而0 ,右接叉光或電等能量,則存在於 構造部分之電子立即流向電子不足之核心,可使得核心部 分發先。因此,本發明之主要㈣,為提供可做為電子材 料(例如記憶開關)用途之新穎樹枝狀體化合物。 (解決問題之技術手段) 、針對上述課題,本發明人等專心研究之結果,成功的 創了本發明之含有硫原子之樹枝狀體北合物。 再者,本發明人等對本發明之樹技狀體化合物,藉由 於樹枝狀構造部分使用多數之硫原子,檢討非U子之 \ 軌道電子之活用。因此,獲知由於硫原子之d_軌道電子比 氧原子之d_執道電子存在於離原子核較遠處,故自由電子 較為活躍’光或電能從d•軌道電子可輕易地傳遞至成為電 子不足構造之核心’若於核心構造使㈣光性化合物殘 基’則藉由傳達之電子使核心部分發光,與氧原子比較, 硫原子之樹枝狀構造及核心之極化性較大,因Λ,本發明 2樹枝狀體化合物可做為電子材料(例如記憶開關)之用途 寺新知識。 ' 再者,本發明人等亦理解含有硫原子之樹枝狀體化合 313210D01 6 200410926 物雖會因氧化引起劣化,但在樹枝狀 反側)來#主 冓仏之外側(核心之相 反側)形成表面官能基,藉由 相 二丁美A 立肢龐大之取代基(以第 可使樹枝狀體化合 / 致高壽命化。 U人注〜大,達到 再者,本發明人等理解本發 體,係可從特定構史…人 硫原子之樹枝狀 J攸%疋構以之新穎合成中 之製造而得。 進仃工業上有利 本發明人等獲得如此眾多 而完成本發明。 奸見_進而重複檢討, 亦即,本發明係關於: ⑴「種樹枝狀體化合物,其特徵為含有下列必須之構成要 素·核心與下式表示之單元1 :200410926 (ii) Description of the invention: [Technical field to which the invention belongs] The present invention relates to novel thioether derivatives, methods for their production and uses, and particularly to sulfur-containing dendrimers and their synthetic intermediates. [Prior Art] Dendritic compounds have a specific polymer structure and can be expected to be used in a wide range of applications. Dendritic compounds have a dendritic structure consisting of a core (core) and regular orthodox branching units (Units), and a special chemical structure in which the functional groups arranged on the outermost layer are expanded in three dimensions, for example, in Nano (Science), Communication Science, Electronic Materials Science, Medicine, Pharmacy, Biology, Interface Science, Materials Science, etc. are being researched in various aspects ("Dendrite" issued by VCH Publishing Company in 1996 ( Dendritic Molecules), Modern Chemistry, June 1998, pp. 20-40, "Molecular Design of Dendrimers", "Multiple Functions of Dendrimers", ^ 47 4 11 ^ ^ (1998 Γ Application of Materials). Dendritic science appeared from about 1990 卞 Y Jun, the number of researches is increasing, and it can be said to be the latest science. ~ Do not use (Japanese Patent Application Laid-Open No. 33063 1), use of solar cells, electrophotographic photoreceptors (η ' δ71), the use of electronic materials (Japanese Patent Application ΐκΠΐ8, the use of crystals (Japanese Patent Application No. 2000264264), coatings, oil black square (Japanese Patent Application No. 1 1 -1 4 0 1 8 0), general φ With Dagger 4 Seven Teeth)! Use of flexible resin sheet (Special Umbrella) 1-3 2 3 3 2 4), Inspection of Cheng Dingwugu, [Use of Bismuth and Bali method (Special Kaiping 3H210D01 200410926 21 8494), Biosensor modifier The invention can be used in various industries such as Keiji Kaiping " ms. [Content of the invention] (Technical problem to be solved by the invention) The σ problem of this month is to provide a new dendritic compound with excellent functions. And the novel synthetic intermediates used in its manufacture. In the eighth edition, 0, right-handed fork light or electricity and other energy, the electrons existing in the structural part immediately flow to the core of insufficient electrons, which can make the core part first. Therefore, this The main object of the invention is to provide novel dendrimer compounds that can be used as electronic materials (such as memory switches). (Technical means to solve problems) In response to the above-mentioned problems, the inventors and others have intensively researched the results and successfully created The dendrimer northern compound containing a sulfur atom of the present invention. Furthermore, the present inventors have used the dendritic structure of the present invention by using a large amount of dendrimers Atoms, review the utilization of non-U sub \ orbital electrons. Therefore, it is learned that since the d_orbital electrons of sulfur atoms are more distant than the d_dominated electrons of oxygen atoms, free electrons are more active 'light or electric energy The electron from d • orbital can be easily transferred to the core of the electron-deficient structure. 'If the photoresist residue is caused by the core structure', the core part emits light by the transferred electron. Compared with the oxygen atom, the sulfur atom is dendritic. The structure and the core have greater polarizability. Due to Λ, the 2 dendrimer compounds of the present invention can be used as electronic materials (such as memory switches) for new knowledge. In addition, the present inventors also understood that the dendritic compound containing sulfur atoms 313210D01 6 200410926 may be deteriorated due to oxidation, but is formed on the opposite side of the dendrite to the outside of the main ridge (the opposite side of the core). The surface functional group can be used to form a dendrimer with a bulky substituent (which can combine dendrimers / increase the lifespan. U people note ~ large, and further, the present inventors understand the body It can be obtained from the specific synthesis history ... the novel synthesis of the dendritic structure of the human sulfur atom by the new structure. It is beneficial to the inventors in the industry to obtain so many to complete the present invention. Repeating the review, that is, the present invention is about: ⑴ "a dendritic compound, which is characterized by containing the following necessary constituent elements · core and unit 1 represented by the following formula:

S—— [式中,裱A表示純碳或含雜原子之六員環] 所形成之樹枝狀構造及表面官能基。 (2)—種樹枝狀體化合物’其特徵為由核心,與上述(1)記載 之單元1與下式表示之單元2: 〇—S—— [In the formula, mounting A represents a pure carbon or a six-membered ring containing heteroatoms] The dendritic structure and surface functional groups formed. (2) A kind of dendritic compound 'characterized in that it is composed of a core, and the unit 1 described in the above (1) and the unit represented by the following formula: 〇—

[式中,環A表示純碳或含雜原子之六員環] 或/及下式表示之單元3: 7 313210D01 200410926[In the formula, ring A represents a pure carbon or a six-membered ring containing a hetero atom] or / and unit 3: 7 313210D01 200410926

——CH——CH

[式中,環A表示純碳或含雜原子之六員環] 所形成之樹枝狀構造,以及表面官能基所構成。[In the formula, ring A represents a pure carbon or a heteroatom-containing six-membered ring] A dendritic structure formed by a surface and a functional group on the surface.

(3)—種樹枝狀體化合物,其特徵為由核心與上述(1)記載之 單元1所形成之部分樹枝狀構造,與上述(2)記載之單元2 形成之部分樹枝狀構造及與上述(2)記載之單元3形成之邹 分樹枝狀構造中之2種以上部分樹枝狀構造之樹枝狀構° 造,及表面官能基所構成。 ⑷如上述⑴或(2)記載之樹枝狀體化合物,其特徵為該樹 枝狀構^之階層數為2至1〇,且該樹枝狀構造為由上述〇) 記載之單A 1形成之階層,及上述⑺記載之單元2形成之 階層,或/及上述⑺記載之單元3形成之階層所構成/。之 (5) 如述⑴至⑷記載之樹枝狀體化合物,其特徵為該單 兀1單兀2及單兀3之壤A,為苯環、D密唆環或三哄環。 (6) 如上述(1)至(5)記載之樹枝狀體化合物, — 、 八付倣為該表 面吕此基為可被取代之烧基、可被取代之 、 方尻基、烷氧基、 烧羧基、或第四級錢基。 (7) 如上述(6)記載之樹枝狀體化合物,其 ^ ^ _ 可试马该表面官能 其特徵為該核 其特徵為該核 二蔡嵌笨 (8)如上述(1)至(7)記載之樹枝狀體化合物 心為發色官能基。 (9)如上述(1)至(7)記載之樹枝狀體化合物 心係從若丹明(Rhodamine)色素、喹唑啉、 313210D01 8 200410926 (Perylene)、偶氮化合物、2,5_二羥基安息香酸甲酯、卟啉、 4,4’-二羥基聯苯、1-(4,4,54,,_三羥基苯基)乙烷及香豆素衍 生物中選出之化合物之殘基。 (10)—種下式表示之硫化合物(3) A dendritic compound characterized by a partial dendritic structure formed by a core and the unit 1 described in (1) above, a partial dendritic structure formed by the unit 2 described in (2) above, and (2) The dendritic structure of two or more partial dendritic structures in the Zoufen dendritic structure formed by unit 3 of the description, and the surface functional group. (1) The dendritic compound according to the above (2) or (2), characterized in that the number of levels of the dendritic structure is 2 to 10, and the dendritic structure is a level formed by the single A 1 described in the above (0). , And the hierarchy formed by the unit 2 described in the above ,, or / and the hierarchy formed by the unit 3 described in the above /. (5) The dendritic compound as described in the above-mentioned ⑴ to ⑷, characterized in that the unit A, unit 2 and unit 3 soil A is a benzene ring, D dense ring, or triple ring. (6) The dendritic compound as described in (1) to (5) above,-and eight are imitated as the surface, and this group is a substituted or unsubstituted alkyl group, a substituted fluorenyl group, or an alkoxy group. , Burning carboxyl, or fourth-grade money. (7) The dendritic compound as described in (6) above, ^ ^ _ can be used to test the surface function, which is characterized by the core, which is characterized by the core. (2) Cai Chouben (8) as described in (1) to (7) above. The dendrimer compound described in ()) is a chromophoric functional group. (9) The dendritic compound described in (1) to (7) above is based on Rhodamine pigment, quinazoline, 313210D01 8 200410926 (Perylene), azo compound, and 2,5-dihydroxy Residues of selected compounds from methyl benzoate, porphyrin, 4,4'-dihydroxybiphenyl, 1- (4,4,54 ,,-trihydroxyphenyl) ethane and coumarin derivatives. (10) —Sulfur compound represented by the following formula

[式中,環Α為[Wherein ring A is

表不之環,結合鍵延伸之位置上具有取代基B、取代基c 及取代基D ’上述環之結合鍵以外之位置亦可被取代, 取代基B表示-S(〇)nR】{式中,η表示0至2之整數,R]表 示取代基}, 取代基C表示x】R2{式中,χ】表示中介基,R2表示取代 基},以及 取代基D表示經碳原子與環Α結合之取代基]。 (11) 如上述(10)記載之硫化合物,其中該R〗及R2分別為相 同或互異之驗金屬、氫原子、可被取代之烷基、芳烷基、 胺曱醯基或硫代胺曱醯基。 (12) 如上述(1〇)或(11)記載之硫化合物,其中該χ】為亞曱 基、二曱基亞曱基、氧原子、硫原子、亞楓或磺酸基。 (13) 如上述(1〇)至(12)之任一項記載之硫化合物,其中該取 9 313210D01 200410926 代基D為氰基、曱醯基或X2R3[式中,χ2表示可被取代之 亞曱基、%基或硫羰基,R3表示可被保護之羥基、巯基或 月女基(但疋,X2為羰基且R3為羥基之情況除外)]表示之基。 (14) 3,5-二巯基苄醇、 〜 (15) 3,5-二巯基苄硫醇、及 (16) 種下式表示之化合物或其鹽類:A ring that is not a table, the position where the bonding bond extends has a substituent B, a substituent c, and a substituent D ′. The position other than the bonding bond of the above ring may be substituted, and the substituent B represents -S (〇) nR] {Formula Where η represents an integer from 0 to 2, R] represents a substituent}, substituent C represents x] R2 {wherein, χ] represents an intermediary group, R2 represents a substituent}, and substituent D represents a carbon atom and a ring A bound substituent]. (11) The sulfur compound according to the above (10), wherein R] and R2 are respectively the same or different metal detector, hydrogen atom, alkyl group, aralkyl group, amine group, or thio group which may be substituted Amine group. (12) The sulfur compound according to the above (10) or (11), wherein χ] is a fluorenylene group, a difluorenylene fluorenylene group, an oxygen atom, a sulfur atom, a maple or a sulfonic acid group. (13) The sulfur compound as described in any one of the above (10) to (12), wherein 9 313210D01 200410926 substituted D is cyano, fluorenyl or X2R3 [wherein, χ2 represents a substitutable Rhenylene,% or thiocarbonyl, and R3 represents a hydroxy, mercapto, or hydrazine group that can be protected (except for the case where X2 is a carbonyl group and R3 is a hydroxyl group). (14) 3,5-dimercaptobenzyl alcohol, ~ (15) 3,5-dimercaptobenzyl mercaptan, and (16) compounds represented by the following formula or their salts:

[式中, R】及h分別表示(1)鈉、鉀等鹼金屬,(2)氫原子,(3)可被 氟原子、氯原子、溴原子、烷氧基或硫代烷氧基等取代之 少兀基,(4)可被上述取代基取代之苯基,或(5)可被上述取代 基取代之芳烷基,(6)下式表示之二取代胺曱醯基或硫代胺 曱醯基:[Wherein R] and h each represent (1) an alkali metal such as sodium and potassium, (2) a hydrogen atom, (3) a fluorine atom, a chlorine atom, a bromine atom, an alkoxy group, or a thioalkoxy group, etc. Substituted alkoxy, (4) phenyl which may be substituted by the above-mentioned substituent, or (5) aralkyl which may be substituted by the above-mentioned substituent, (6) di-substituted amine or thio group represented by the following formula Amine group:

ZZ

II —c—n(r7)2 (其中,R?表示(1)可被氟原子、氯原子、溴原子等鹵 素原子取代之烷基,(2)可被上述取代基取代之笨基,或(3) 可被上述取代基取代之芳烷基,z表示氧原子或硫原子); η表示〇至2之整數; 表不亞曱基、一曱亞曱基、氧原子、硫原?、亞楓或磺 10 313210D01 200410926 酸基; $及l表示⑴氫原子,(2)可被氟原子、氯原子及漠原子 寻鹵素原子取代之烷基,(3)可被上述取代基取代之苯某, 或(4)可被上述取代基取代之芳烷基,或者,心及可 結合形成次甲基、酮基或硫酮基。而且, 4 丄 3 八4及h 亦可形成氰基, 心表示⑴經基,(2)疏基,(3)胺基,(4)曱酸基,⑺可被貌 原子、氯原子、漠原子等ώ素原子取代之烧基,(6)可被上 述取代基取代之烧氧基,或⑺可被上述取代基取代之硫代 院氧基’⑻可被上述取代基取代之苯基,或(9)可被上述取 代基取代之芳烷基;以及 R6意指氫、經基、烷基、烷氧基、烷硫基、硝基、氣其、 一甲胺基、或二乙胺基]。 【實施方式】 本發明中用語之定義,如下列所示。 烧基可為直鏈或分技狀,而以碳數工至6者為較佳。 烧氧基可為直鏈或分枝狀,而以碳數liL 6者為較佳。 方烧基為芳基與㈣結合之基,烧基與上述音義相 同,芳基以碳數5至12者為較 〇孕乂1土而以石反數6至8為更佳。 芳基可為雜芳環,而以由】 、_ 王J调奴原子及〗至3個氧、 硫或/及氮原子形成者為較佳。 可被取代」之取代基者,例如具有碳數]至20之烴 基(舉例而言,以碳數】至6 ^ , 二 兀暴、灰數5至】2之 基等烴基為較佳)、护童f 7 $ 巧^土)石厂火數]至6之規氧基 '画素、經基、毓II —c—n (r7) 2 (where R? Represents (1) an alkyl group which may be substituted with a halogen atom such as a fluorine atom, a chlorine atom, or a bromine atom, (2) a benzyl group which may be substituted with the above substituent, or (3) an aralkyl group which may be substituted by the above substituents, z represents an oxygen atom or a sulfur atom); η represents an integer of 0 to 2; does it mean an arylene group, a arylene group, an oxygen atom, or a sulfur atom? , Sulfonyl or sulfonate 10 313210D01 200410926 acid group; $ and l represent a hydrogen atom, (2) an alkyl group which may be substituted with a fluorine atom, a chlorine atom, and a halogen atom or a halogen atom, (3) an alkyl group which may be substituted with the above substituents Benzene, or (4) an aralkyl group which may be substituted by the above substituents, or may be combined to form a methine group, a keto group or a thioketone group. In addition, 4 丄 3 4 8 and h can also form cyano groups, the heart represents fluorenyl groups, (2) thio groups, (3) amine groups, (4) fluorenic acid groups, and fluorene can be replaced by atoms, chlorine atoms, and (6) an alkoxy group which may be substituted by the above substituent, or a thioloxy group which may be substituted by the above substituent, a phenyl group which may be substituted by the above substituent, Or (9) an aralkyl group which may be substituted by the above-mentioned substituents; and R6 means hydrogen, vial, alkyl, alkoxy, alkylthio, nitro, ethyl, monomethylamino, or diethylamine base]. [Embodiment] Definitions of terms used in the present invention are as follows. The calcined base may be linear or split, and the number of carbon atoms to 6 is preferred. The alkoxy group may be linear or branched, and a carbon number of liL 6 is preferred. The square calcined group is a group in which an aryl group is combined with fluorene. The calcined group is the same as the above-mentioned meaning. The aryl group has a carbon number of 5 to 12 as better than 0, and an inverse number of 6 to 8 is more preferable. The aryl group may be a heteroaromatic ring, and it is more preferable that it is formed from a hydrogen atom and a three oxygen, sulfur, or / and nitrogen atom. Can be substituted ", for example, a hydrocarbon group having a carbon number] to 20 (for example, a carbon number] to 6 ^, a hydrocarbon group such as an alkyl group, a ash number 5 to [2], etc. are preferred, Guardian child f 7 $ 巧 ^ 土) Shichang fire number] to 6 of the regular oxygen 'pixels, Jingji, Yu

U 313210D01 200410926 基等。 再者’中介基者可合 之伸烷基、-〇-、_s…二 鏈或分技狀而碳數1至6 2 —或含-〇-、、 -S〇-而碳數為1至6之伸烷基。U 313210D01 200410926 etc. In addition, the intermediary group can be alkylene, -0-, _s ... two-chain or split-like state and carbon number 1 to 6 2-or containing -〇-, -S〇- and carbon number 1 to 6 of alkylene.

表面官能基可為可& A τ , , ^ "、被取代而碳數1至20之烴基,而以 下式所表不者為較佳··The surface functional group may be a substituted hydrocarbon group having 1 to 20 carbon atoms, and is preferably represented by the following formula.

一 CH1 CH

,A與上述定義相同)。^被例如1至3個上述烧 ㈣=個上錢氧基或/及1至3個咖邮灿N+(CHJ 個^义佳,而以被1至3個第三丁基取代為最佳。1至3 個中,以由2個取代基取代為較佳。 策發明中,純碳或含雜原二增,具體而言如 表面官能基者,具體而言如筮一丁曾 ^ NVpu , 。如弟二 丁基、CONH(CH2)2 yCH3)3及甲氧基我氧基等,然而本發明中以第三丁基 為歲^佳。 烷基可為直鏈或分枝狀,然而以碳數^者為較佳。 具體而言,如甲基、乙基、正丙基、異丙基或第三丁基等。 芳烷基者,如〒基及苯乙基等。烷氧基可為直鏈或分 枝狀,然而以碳數C,·4者為較佳,具體而言,如曱氧基、 乙氧基、異丙氧基或第三丁氧基等。 發色官能基者,可為公知之發色官能基,具體而言, 313210D01 12 200410926 例如從D-丹明色素、喹唑啉、二萘嵌苯、偶氮化合物、2,5-二羥基安息香酸曱酯、卩卜啉、4,4、二羥基聯苯或1-(4,4,,4”-三羥基苯基)乙烷衍生之基為較佳。 上述(10)至(14)記載之合成中間體雖為新穎化合物,然 而依照本身公知之反應即可輕易地進行工業製造而得,其 之一例如以下所示。 [實施例] 313210D0] 200410926, A has the same definition as above). ^ For example, 1 to 3 of the above-mentioned roasted glutamate = one or two sulphuroxy groups or / and 1 to 3 Kayoucan N + (CHJ ^ Yi Jia, and it is best to be substituted by 1 to 3 third butyl. Among 1 to 3, it is better to substitute by 2 substituents. In the invention, pure carbon or heterogen-containing double increase, specifically, such as surface functional groups, specifically, such as 筮 一 丁 曾 ^ NVpu, For example, di-dibutyl, CONH (CH2) 2 yCH3) 3, and methoxyloxy, etc. However, in the present invention, the third butyl group is preferred. The alkyl group may be straight-chain or branched, but a carbon number is preferred. Specifically, such as methyl, ethyl, n-propyl, isopropyl, or tert-butyl. Aralkyls such as fluorenyl and phenethyl. The alkoxy group may be straight-chain or branched, but a carbon number of C, · 4 is preferred, and specifically, such as fluorenyloxy, ethoxy, isopropoxy, or tertiary butoxy. The color-developing functional group may be a well-known color-developing functional group, and specifically, 313210D01 12 200410926, for example, from D-damin pigment, quinazoline, perylene, azo compound, 2,5-dihydroxybenzoin Acetic acid esters, oxoporphyrin, 4,4, dihydroxybiphenyl or 1- (4,4,4 "-trihydroxyphenyl) ethane-derived groups are preferred. (10) to (14) above Although the described synthetic intermediates are novel compounds, they can be easily manufactured industrially in accordance with reactions known per se. One of them is shown below. [Example] 313210D0] 200410926

使用此種方式得到之合成中間體可製造樹枝狀體。本 身公知之反應方法,舉例而言,從中心之核向外側之樹枝 狀構造再朝向表面官能基進行化學合成之發散(Divergent) 合成法,或從最外層之表面官能基向内側之樹枝狀構造再 朝向中心核進行化學合成之收敛(Convergent)合成法均 313210D01 200410926 可0 依此種方式進行,可得到下列化合物及樹枝狀體。Dendrimers can be produced using the synthetic intermediates obtained in this way. A reaction method known per se, for example, a divergent synthesis method of chemically synthesizing a dendritic structure from a core to an outer side toward a surface functional group, or a dendritic structure from an outermost surface functional group to an inner side Convergent synthesis methods for chemical synthesis toward the central core are all 313210D01 200410926. 0 In this way, the following compounds and dendrimers can be obtained.

313210D01 200410926 若進一步進行上述製造方法之反應,可得到例如比下 列階層數更大之樹枝狀體化合物。313210D01 200410926 If the reaction of the above-mentioned production method is further carried out, for example, dendrimer compounds having a larger number of layers than the following can be obtained.

16 313210D01 20041092616 313210D01 200410926

接者,雖使用實施例以說明本發明,然而不應解釋為 本發明只侷限於該等實施例。有關實施例之反應如圖所 示。Ex表示實施例。Further, although the examples are used to illustrate the present invention, it should not be construed that the present invention is limited to these examples. The reaction of the examples is shown in the figure. Ex represents an example.

313210D0I 200410926313210D0I 200410926

C02MeC02Me

CH2Br MeS 18 3132]〇D01 200410926CH2Br MeS 18 3132] 〇D01 200410926

〇 〇〇 〇

19 313210D01 200410926 〇19 313210D01 200410926 〇

h〇h2ch〇h2c

SHSH

SHSH

N~MeN ~ Me

—Me Me’—Me Me ’

MeMe

20 313210D01 20041092620 313210D01 200410926

21 3132I0D01 20041092621 3132I0D01 200410926

以與上述同樣之方式製造下述化合物。 22 313210D01 200410926 MIMe f Me 、NII i N丨Me MeThe following compounds were produced in the same manner as described above. 22 313210D01 200410926 MIMe f Me 、 NII i N 丨 Me Me

313210D01 200410926313210D01 200410926

24 313210D01 20041092624 313210D01 200410926

25 313210D01 20041092625 313210D01 200410926

3)32)0001 26 2004109263) 32) 0001 26 200410926

27 3132I0D01 20041092627 3132I0D01 200410926

28 313210D01 20041092628 313210D01 200410926

有關本發明化合物用途之— ^ ^ 例,根據圖式具體地執 明。第1圖表示本發明之單一泰 心早 毛子隧道(Tunnel)元件各 構造之模式圖。 本發明中,係藉由於其士 稽田万、基板1上將下部電極2、下部 Ϊ&亞月女LB膜層3 '中間電極声 位層4、上部聚醯亞胺LB膜 5及上部電極6依順序積層盖。 ^ ^構成早一電子隧道元件。 構成基板1之材料並益转 ^ ^ …%別限制,例如可使用金屬 :料陶::,及塑膠等通常做為電子元件基板使 =二者:下部電極2及上部電“者,可使用金 在本%明中,所謂聚酿亞 布&姓& 2肢無思指藉由郎格缪^ ^ Examples of the use of the compounds of the present invention will be specifically described with reference to the drawings. Fig. 1 is a schematic diagram showing the structure of a single Thai-core early hairy tunnel element according to the present invention. In the present invention, due to Shiji Tianwan, the lower electrode 2 on the substrate 1 and the lower 1 & Asian moon LB film layer 3 'middle electrode sound layer 4, the upper polyimide LB film 5 and the upper electrode 6 Laminate the covers in order. ^ ^ Constitutes an early electronic tunnel element. The material constituting the substrate 1 is not limited. For example, metal, ceramics, and plastic can be used as electronic component substrates. Both: lower electrode 2 and upper electrode can be used. In the Ben %% Ming, the so-called Juyabu & surname & two limbs are thoughtless by Lange Miao

,、准捷特法形成之聚醯亞胺 彳°、、夕S 女早刀子朕或其累積膜。本發, 313210D0] 29 200410926 之單一電子隧道元件,可由該下部聚醯亞胺LB膜層3以 13至30層之聚醯亞胺單分子膜累積而構成。 構成聚醯亞胺LB膜之聚醯亞胺,可使用各種具有聚 酸亞胺構造者,然而在使用具有式25表示之重複單位之聚 醯亞胺之情況,由於可控制單分子膜之厚度,故較佳。此 種情況,聚醯亞胺LB膜層3之形成,係以聚醯亞胺前驅 月豆之聚醯胺酸狀態下,進行單分子膜之累積後,藉由化學 處理進行醯亞胺化為佳。, Polyimide 准 ° formed by quasi-jet method, 、 S female early knife 朕 or its accumulation film. Benfa, 313210D0] 29 200410926 A single electron tunnel element can be formed by accumulating the lower polyimide LB film layer 3 with 13 to 30 polyimide monomolecular films. As the polyimide constituting the polyimide LB film, various types of polyimide structures can be used. However, in the case of using a polyimide having a repeating unit represented by Formula 25, the thickness of the monomolecular film can be controlled. , So it is better. In this case, the formation of the polyimide LB film layer 3 is based on the accumulation of a monomolecular film under the polyacrylic acid state of the polyimide precursor moon bean, and then the imidization is performed by chemical treatment to good.

繼而,於下部聚酸亞胺LB膜層3上,形成插入有本 發明樹枝狀體分子之聚醯亞胺LB膜之單分子層,做為中 :電極層4。料,為了使本發明樹枝狀體分子做為:間 電極之機能,力聚醯亞胺LB膜中’本發明樹枝狀體分子 必須於適當之濃度(〇 〇1至1%)下使用。 在中間電極層4之上,以同樣之方式形成上部聚酿亞 胺LB膜'5與下部聚醯亞胺⑶膜層Η上部聚酿亞胺Then, on the lower polyimide LB film layer 3, a single-molecule layer of the polyimide LB film with dendrimer molecules of the present invention inserted is formed as the middle: electrode layer 4. It is expected that in order for the dendrimer molecules of the present invention to function as an interelectrode, the dendrimer molecules of the present invention must be used in a suitable polyimide LB film at an appropriate concentration (0.01 to 1%). On the intermediate electrode layer 4, the upper polyimide LB film '5 and the lower polyimide ⑶ film layer Η upper polyimide are formed in the same manner.

Lb膜層5係由20至30屛平鴯艿吵抑八7 二 層+I亞胺早分子膜累積而構成。 该上部聚醯亞胺LB膜層5之卜兹 ^ 0之上稭由積層上部電極6,而 得到本發明之單_雨主 ― 兒子隧迢兀件。該單一電子隧道元件形 成電子隧道層,由於下部聚 I小‘亞LB肤層3、上部聚醯亞 31321OD01 30 200410926 胺lb膜層 之有機分子 特性。 5及中間電極層4完全係由 材料所構成,可呈現良好‘單亞胺LB膜所成 f之早一電子隧道傳導The Lb film layer 5 is composed of 20 to 30% flat and noisy 8-7 two-layer + I imine early molecular film accumulation. The upper polyimide LB film layer 5 is laminated on the upper electrode 6 to obtain the single _ rain master ― son tunnel element of the present invention. This single electron tunnel element forms an electron tunnel layer, due to the organic molecular characteristics of the lower poly I sublayer LB sublayer 3 and the upper polyisocyanate 31321OD01 30 200410926 amine lb film layer. 5 and the middle electrode layer 4 are entirely composed of materials, and can exhibit good early electron tunneling of f formed by the monoimine LB film

酯之製造 5 一一甲硫基〒酸甲Manufacture of esters 5

將3,5-貳-(二曱基胺曱醯基硫基)苄酸曱酯公克, 於無水曱ϋ 毫升中加齡解,以及在氮氣蒙氣中滴加 曱醇鈉30公克。然後,將混合物加熱回流i小時使其反應 後’稍微冷卻,再添加過量之曱基碘,將混合物加熱回流 3小時使其反應’將於減壓下濃縮得到之殘餘物藉由層析 法精製(使用氯仿溶析),得到目標化合物。產量1〇·5公克 (79.3°/。),熔點 46°C。 iH-NMR((5ppm,CDC13,TMS); 2·5(6Η,s),3.9(3H,s),7.2 0H,s),7·6(2Η, s) 實施例2 經由3,5-二曱硫基卞知製- —曱硫基卞基漠化物 31321000】 31 200410926A solution of 3,5-fluorenyl- (difluorenylaminofluorenylthio) benzyl acetate in acetic acid was added to anhydrous acetic acid, and 30 g of sodium methoxide was added dropwise in a nitrogen blanket. Then, the mixture was heated under reflux for i hours to make the reaction 'slightly cooled, and then an excess of sulfonium iodide was added, and the mixture was heated under reflux for 3 hours to make it react'. The residue obtained by concentration under reduced pressure was purified by chromatography. (Dilute with chloroform) to obtain the target compound. Yield 10.5 g (79.3 ° /.), Melting point 46 ° C. iH-NMR ((5ppm, CDC13, TMS); 2.5 (6Η, s), 3.9 (3H, s), 7.20H, s), 7.6 (2Η, s) Example 2 Via 3,5- Disulfanyl sulfonium system-sulfanyl sulfonium desert compound 31321000] 31 200410926

MeSMeS

C02Me + NaAlH2 (OCH9CH0OMe)C02Me + NaAlH2 (OCH9CH0OMe)

MeSMeS

MeSMeS

CH0OHCH0OH

MeS CBr4MeS CBr4

Ph0PPh0P

MeSMeS

CH2BrCH2Br

MeSMeS

將二氫貳(2-曱氧乙氧基)鋁酸鈉(甲笨中7〇%,公 ^ ’〇·17莫耳)在氮氣氣流下溶解於無水四 A I:5至^滴一曱硫基〒酸曱〜克二 時。將:::溶液。然後,將混合物在同溫度下攪拌“、 用^加乂至^毫升之濃鹽酸與冰水}公升之混合物中, 乳仿1公升卒取。萃取液用氣仿做 — 法精製。將溶出液於減壓下濃縮至乾,將=,錯由層析 石油喊洗淨,得到3,5_二甲硫〒醇,料之殘餘物用 -毫升中。進而添力〜公克^ 同時添加PPh3 27公克。—旦反應液成為淡黃^日祝拌, 會慢慢地析出白色結晶(-pph3—〇)。在2〇至 明液, 時後’除去自色結晶,將濃縮之殘餘物 反應3小 係表 CHA··己&=1: !溶析)精[得到二二=層析法(以 化物。產量21.6公克(82%),熔點76至7^c。硫基T基漠Dissolve sodium dihydrofluorene (2-fluorenthoxyethoxy) aluminate (70% in methylbenzyl chloride, 0.17 mol) under nitrogen flow in anhydrous tetra AI: 5 to ^ drops of a sulfide Glycolic acid ~ ~ two o'clock. Will ::: solution. Then, the mixture was stirred at the same temperature, and ^ was added to a mixture of ^ ml of concentrated hydrochloric acid and ice water} liters, and 1 liter of chloroform was taken out. The extract was refined by gas imitation-the method was refined. Concentrated to dryness under reduced pressure, and washed with chromatographic petroleum to obtain 3,5_ dimethyl mercaptan, the residue of the material was used in -ml. Then add ~~ g ^^ PPh3 27 was added at the same time G.-Once the reaction solution becomes pale yellow, it will slowly precipitate white crystals (-pph3-0). After 20 to bright solution, the 'colorless crystals' will be removed after some time, and the concentrated residue will be reacted 3 Small series CHA ··· & = 1:! Dissolution) refined [to obtain two two = chromatography (to compounds. Yield 21.6 g (82%), melting point 76 to 7 ^ c. Thio T radical

示四氫咲喃(說明書之其他地方亦相同)。 THF 實施例i 313210D0] 32 200410926 經由3,5-貳-(3,5-二曱硫基苄氧基)苄酸曱酯製造3,5-貳-(3,5-二曱硫基〒氧基)节醇Tetrahydropyran (shown elsewhere in the manual). THF Example i 313210D0] 32 200410926 Production of 3,5-fluorene- (3,5-difluorenylthiofluorenyl) via 3,5-fluorene- (3,5-difluorenylthiobenzyloxy) benzoic acid ethyl ester Benzyl alcohol

CH〇Br MeSCH〇Br MeS

C〇2Me 18-冠-6C〇2Me 18-crown-6

MeSMeS

MeSMeS

NaAlH2 (〇CH2CH2〇CH3)2NaAlH2 (〇CH2CH2〇CH3) 2

MeSMeS

將3,5-二曱硫基〒基漠化物21 ·0公克(0.080莫耳)、 3,5-二羥基〒酸曱酯6.7公克(0.040莫耳)、碳酸鉀28.0公 克(0.20莫耳)及18-冠-6 2.1公克(0.0080莫耳)添加於無 33 313210D01 200410926 水丙酮5 00笔升中’在氮氣蒙氣中加熱回流]$小時使其反 應。從反應液中除去不溶物,將濾液於減壓下濃縮至乾。 卒取液用氯仿做為展開液藉由層析法精製。將殘餘物於減 壓下濃縮,得到3,5备(3>二甲硫基苄氧基)〒酸甲酯。 收里21 ·0公克(9 8.9%),熔點121至122艽。 ΐ-ΝΜΙΚό 卿,CDC13,TMS) · 2 “削、〇 π·』 ),2.4⑽,S),3機 s),4._,s),6·3 方、氫貳(2甲氧乙氧基)鋁酸鈉(曱苯中70%,22 7八 克,〇·078莫耳)中,在氮氣氣流中及5至⑽下,以 間滴入^,5备(3^二曱硫基节氧基)〒酸曱醋210 么克 >谷於1 8 0宅升四氫ρ夫喊、、六 庐她ς丨士 夫南之,合液。然後,將反應混合物 攪拌5小時,並倒入2公斗赵:^ 將…六 Α升稀鹽酸中。用氯仿1公升萃取。 將卒取液於減壓下濃縮至乾, 銲,、餘物以氯仿做為展開溶 某错由&柱層析法精製,得到3,5 1 基)节醇。產量17.5公克(85·6%)。^基卞氧 riurCDCl3> ™s):2·402^s)> 4·6^ s), ,5. 1施例4 3H(3,5_二曱硫基节氧基)节基填化物之製造 313210D01 34 20041092621.0 g (0.080 mol) of 3,5-difluorenylthiofluorenyl desert, 6.7 g (0.040 mol) of phosphonium 3,5-dihydroxyphosphonate, and 28.0 g (0.20 mol) of potassium carbonate And 18-crown-6 2.1 grams (0.0080 mol) was added to 33 313210D01 200410926 5,000 strokes of water acetone 'heated to reflux in a nitrogen blanket] for one hour to make the reaction. The insoluble matter was removed from the reaction solution, and the filtrate was concentrated to dryness under reduced pressure. The extraction solution was purified by chromatography using chloroform as the developing solution. The residue was concentrated under reduced pressure to obtain methyl 3,5 (3 > dimethylthiobenzyloxy) acetate. It contains 21.0 grams (9 8.9%) and a melting point of 121 to 122 ° F. ΐ-NMILIK Qing, CDC13, TMS) · 2 "cut, 〇π ·"), 2.4S, S), 3 machines s), 4._, s), 6.3 square, hydrogen hydrazone (2methoxyethyl Oxy) sodium aluminate (70% in toluene, 22 7.8 g, 0.078 mole), in a nitrogen gas stream and under 5 to ⑽, dropwise ^, 5 to prepare (3 ^ dioxine sulfur Benzyloxy) acetic acid, vinegar, 210 gram > Gu Yu 180 liters of tetrahydrophosphine, Liu Lu ta 丨 Shi Fu Nan Zhi, the liquid. Then, the reaction mixture was stirred for 5 hours, And pour it into 2 liters of Zhao: ^ will ... Six A liters of dilute hydrochloric acid. Extract with 1 liter of chloroform. Concentrate the extraction solution to dryness under reduced pressure, weld, and use chloroform as the unfolding solution. & Purification by column chromatography to obtain 3,5 1-based) benzyl alcohol. Yield 17.5 g (85 · 6%). ^ yl alkoxy riurCDCl3 > ™ s): 2.402 ^ s) > 4.6 ^ s),, 5.1 Example 4 Manufacture of 3H (3,5_difluorenylthiobenzyloxy) benzyl filler 313210D01 34 200410926

將3,5-貳-(3,5-二甲硫基〒氧基)苄醇17.0公克(0·033 莫耳)及四溴化碳14·2公克(0.043莫耳)溶於四氫呋喃100 毫升中,然後在1.0至l〇°C下,逐次添加少許三苯膦11.3 公克(0.043莫耳)。然後,將反應液保持於上述溫度,同時 攪拌7小時。將其倒入冰水3 00毫升中用氯仿萃取。將萃 取液藉由層析法精製,得到7.0公克之3,5-貳-(3,5-二曱硫 基〒氧基基溴化物。 W-NMR(0ppm,CDC13,TMS) ; 2.4(12H,s),4.4(2H,s), 4·9(4Η,s),6.5 〜7.1(9Η,m) 實施例5 3,5-貳二曱基硫代胺曱醯氧基Τ酸曱酯之製造17.0 g (0.033 mol) of 3,5-fluorene- (3,5-dimethylthiofluorenyloxy) benzyl alcohol and 14.2 g (0.043 mol) of carbon tetrabromide were dissolved in 100 ml of tetrahydrofuran Medium, and then a small amount of triphenylphosphine 11.3 g (0.043 mol) was added successively at 1.0 to 10 ° C. Then, the reaction solution was kept at the above temperature while being stirred for 7 hours. It was poured into 300 ml of ice water and extracted with chloroform. The extract was purified by chromatography to obtain 7.0 g of 3,5-fluorene- (3,5-difluorenylthiofluorenyloxy bromide. W-NMR (0 ppm, CDC13, TMS); 2.4 (12H , S), 4.4 (2H, s), 4.9 (4 Η, s), 6.5 to 7.1 (9 Η, m) Made

35 313210D0] 200410926 將3,5-二羥基苄酸曱酯(168·2公克,ι〇〇〇莫耳)、二 曱基硫代胺曱醯基氯化物(280·4·公克,2·2〇莫耳,純度 97%)、碳酸鉀(300公克,2·17莫耳)及丙酮(3〇〇〇毫升)加 入附有攪拌機之5公升圓底燒瓶中。將反應混合物於攪拌 下在40至50°C反應24小時。將反應混合物減壓濃縮除去 丙酮,藉由過量水冷卻,得到為無色結晶之3,5-貳-二甲基 硫代月女甲氧基卞酸甲醋’將其從乙醇中再結晶,得到 297.5公克(產率87%)之針狀結晶。熔點132至I”。 lH-NMR(CDCl3); 3.34(6H, s, Me x 2), 3.44(6H, s, Me x 2), 3.90(3H, s, Me), 7. 05-7. 09 (1H, m, ph-H), 7. 64-7. 67(2H, s, ph-H)35 313210D0] 200410926 Put 3,5-dihydroxybenzyl acetic acid ester (168.2 g, mol), difluorenylthioamine fluorenyl chloride (280 · 4 · g, 2.2 Mol, purity 97%), potassium carbonate (300 g, 2.17 mol) and acetone (3,000 ml) were added to a 5-liter round bottom flask with a stirrer. The reaction mixture was reacted with stirring at 40 to 50 ° C for 24 hours. The reaction mixture was concentrated under reduced pressure to remove acetone, and cooled with an excess of water to obtain 3,5-fluorene-dimethylthiomocetomethoxymethoxyacetic acid methyl acetate as colorless crystals, which was recrystallized from ethanol to obtain 297.5 g (87% yield) of needle-like crystals. Melting point 132 to I ". LH-NMR (CDCl3); 3.34 (6H, s, Me x 2), 3.44 (6H, s, Me x 2), 3.90 (3H, s, Me), 7. 05-7. 09 (1H, m, ph-H), 7. 64-7. 67 (2H, s, ph-H)

Me表示CH3,以及ph表示苯基(以上及以下之本說明 書中所述均相同)。 實施例6 3,5-貳-二甲基胺曱醯硫基苄酸曱酯之製造Me represents CH3, and ph represents phenyl (the same applies in the description above and below). Example 6 Production of 3,5-fluorene-dimethylamine sulfanylbenzoic acid phosphonium ester

將3,5-貳-二曱基硫代胺曱醯氧基〒酸甲酯(297.0公 克,0.867莫耳)於210至213 °C及攪拌下添加至^味唾 咬酮(1⑽0毫升)。在加熱回流條件下進行3小時反應。於 其中添加乙酸乙酯(1000毫升),以5%冷氫氧化鈉水溶液 (300毫升)及飽和食鹽水(300毫升)洗淨,以及用硫敗鎂乾 313210D01 36 200410926Methyl 3,5-fluorenyl-difluorenylthioamine oxoacetate (297.0 g, 0.867 mol) was added to sialylone (1.0 ml) at 210 to 213 ° C with stirring. The reaction was carried out under heating and refluxing for 3 hours. To this was added ethyl acetate (1000 ml), and it was washed with 5% cold sodium hydroxide aqueous solution (300 ml) and saturated brine (300 ml), and dried over magnesium thionite. 313210D01 36 200410926

德去乙酸乙酷後’將殘餘物從甲苯(5〇〇毫升)中再结 晶’得到無色針狀結晶之3,5_武_二甲基胺甲醯硫基苄酸° 酯。219公克(產率74%)。熔點128至13〇它。 s,Me), 7·82(1Η,S,ph-Η) 缶NMR(CDC13); 3·05(12Η,s,Mex4),3·90(3Η 8.17(2Η,s,ph-Η) 實施例7 3,5-二巯基苄酸曱酯之製造After the deacetic acid was dehydrated, the residue was recrystallized from toluene (500 ml) to obtain colorless needle-like crystals of 3,5-dimethylamine formamidinethiobenzate. 219 g (74% yield). It has a melting point of 128 to 130. s, Me), 7.82 (1Η, S, ph-Η) 缶 NMR (CDC13); 3.05 (12Η, s, Mex4), 3.90 (3Η 8.17 (2s, s, ph-Η) Implementation Example 7 Production of 3,5-Dimercaptobenzyl phosphonium ester

,Ν—Me SH Me 將3,5-戴-二曱基胺曱醯硫基节酸甲酿(34 2公克, 〇.1〇〇莫耳)與43公克甲醇鈉之甲醇溶液(〇·223莫耳)及甲 醇(150毫升)之混合物於22至25t下反應。以5〇〇毫升之 冰水冷卻,將反應混合物用濃鹽酸中和,得到無色結晶。 將其用曱醇精製’得到為無色粉末之3,5 -二巯基苄酸曱酷 12.5公克(產率62.5%)。熔點61至62。(:。 iH-NMR(CDC13); 3·51(2Η,s,SH X 4),3·87(3Η,s, Me),7·30(1Η,t,J=〇.i Hz, plHO,8.67(2H,d,J=0.1 Hz,Ph-Η) 實施例8 3二巯基T酸乙酯之製造 37 313210D01 200410926, Ν—Me SH Me A solution of 3,5-dai-di-amidinoaminothiothioic acid (34 2 g, 0.100 mol) and 43 g of sodium methoxide in methanol (0.223 A mixture of Moore) and methanol (150 ml) was reacted at 22 to 25 t. After cooling with 500 ml of ice water, the reaction mixture was neutralized with concentrated hydrochloric acid to obtain colorless crystals. This was purified with methanol to obtain 12.5 g of 3,5-dimercaptobenzoate, a colorless powder (yield: 62.5%). Melting point 61 to 62. (: IH-NMR (CDC13); 3.51 (2Η, s, SH X 4), 3.87 (3Η, s, Me), 7.30 (1Η, t, J = 0.1 Hz, plHO , 8.67 (2H, d, J = 0.1 Hz, Ph-Η) Example 8 Production of 3 Dimercapto T-Acid Ethyl 37 313210D01 200410926

(Et意指乙基,以下相同。) 依照常法之酯化反應進行上述之反應,製造3,5-二巯 基苄酸乙酯。熔點49至51°C。(Et means ethyl, the same applies hereinafter.) The above-mentioned reaction is carried out according to an ordinary esterification reaction to produce ethyl 3,5-dimercaptobenzoate. Melting point is 49 to 51 ° C.

】H-NMR(CDC13); 1.36(3H, t, J = 0.02He,Me), 3·51(2Η,s,SHx2), 4·33(2Η, Q, CH2), 7.31 (1H, s, ph-H), 7.68(2H, s, .ph-H) 再者,上述化合物之游離羧酸3,5-二巯基安息香酸, 係依照3〇11<:〇,〜.1<[.;811(:111^3]<:,0.]\4.;丫&81^〇1,31<^,1^]\4· Zh· 〇rg· Khim. (1 985),21(7),1470-1477 中記載之製造方 法製造。 實施例9 3,5-貳-二曱基胺曱醯硫基安息香酸之製造] H-NMR (CDC13); 1.36 (3H, t, J = 0.02He, Me), 3.51 (2Η, s, SHx2), 4.33 (2Η, Q, CH2), 7.31 (1H, s, ph-H), 7.68 (2H, s, .ph-H) Furthermore, the free carboxylic acid 3,5-dimercaptobenzoic acid of the above-mentioned compound is in accordance with 3101 <: 〇, ~ .1 <[.; 811 (: 111 ^ 3] <:, 0.] \ 4 .; ya & 81 ^ 〇1, 31 < ^, 1 ^] \ 4 · Zh · 〇rg · Khim. (1 985), 21 ( 7), 1470-1477. Example 9 Production of 3,5-fluorenyl-difluorenylamine thiothiobenzoic acid

將3,5-貳-二曱基胺曱醯硫基〒酸曱酯(3 ·42公克,1〇 耄莫耳)及5%氫氧化鈉水溶液(1〇毫升,12.5毫莫耳)於22 至25°C及攪拌下反應3小時。將反應混合物於5〇毫升冰 水中冷卻,用乙酸乙酯(300毫升X 3)萃取,用硫酸鎂乾燥。 313210D01 38 200410926 將反應混合物於減壓下濃縮,餾去乙酸乙酯後,得到無色 結晶。將其從乙醇中精製,得到2.86公克(產率87.2%)為 無色針狀結晶之3,5-貳-二曱基胺甲醯硫基安息香酸。熔點 196 至 198°C (分解)。 Ή-NMR⑽S0-d6); 2.96(6H,s,Me X 2),3.03(6H,s,Me X 2), 7·82(1Η,s, Ph-H), 7.88(lH,s, ph~H), 8.10(1H, s, ph-H), 10.5 (1H, br-s, OH) 實施例 10 3,5_武-二曱基胺曱酸硫基〒醇之製造Mix 3,5-fluorenyl-difluorenylamine, phosphorothioate (3.42 g, 10 mol) and 5% aqueous sodium hydroxide (10 ml, 12.5 mmol) at 22 Allow to react to 25 ° C for 3 hours with stirring. The reaction mixture was cooled in 50 ml of ice water, extracted with ethyl acetate (300 ml × 3), and dried over magnesium sulfate. 313210D01 38 200410926 The reaction mixture was concentrated under reduced pressure, and ethyl acetate was distilled off to obtain colorless crystals. This was purified from ethanol to obtain 2.86 g (yield 87.2%) of 3,5-fluorenyl-dimethylaminoformylthiobenzoic acid as colorless needle crystals. Melting point 196 to 198 ° C (decomposed). Ή-NMR⑽S0-d6); 2.96 (6H, s, Me X 2), 3.03 (6H, s, Me X 2), 7.82 (1Η, s, Ph-H), 7.88 (lH, s, ph ~ H), 8.10 (1H, s, ph-H), 10.5 (1H, br-s, OH) Example 10 Manufacture of 3,5_wu-difluorenylaminosulfonic acid thiol alcohol

將溶於2 0毫升曱苯中之3,5 _貳-二甲基胺甲醯硫基苄 酸曱酯(3.42公克,1〇毫莫耳)於15至30。(:添加至二氫貳 (2 -曱氧乙氧基)鋁酸鈉(曱苯中7〇0/〇,8.7公克,30· 1毫莫 耳),於攪拌及加熱回流條件下反應3小時。將反應混合物 以含有1 0宅升濃硫酸之5〇毫升冰水冷卻,用乙酸乙酯(3 〇 毫升X 3)萃取,萃取液用硫酸鎂乾燥。將反應混合物於減 壓下濃縮,餾去乙酸乙酯後,得到2·54公克之無色油狀 物。將其以氯仿做為溶出溶媒藉由管柱層析法精製,得到 為無色油狀物之3,5-戴-二甲基胺甲醯硫基苄 克,產率 38.5%)。 · Α !Η-腿(CDC13); 2·9咖,s,Me χ 2),2 94(6H,s,心 χ 2),ugh 4.50(2Η, s, CH2), 7.38(2Η, s, ph-H), 7.44(1Η, s, ph-H) ’ 3】32]0D0】 39 200410926 實施例11 3,5-二巯基苄醇之製造The 3,5-fluorene-dimethylaminoformamidinethiobenzylacetate (3.42 g, 10 mmol) dissolved in 20 ml of toluene was placed between 15 and 30. (: Added to sodium dihydrofluorene (2-oxoethoxy) aluminate (700 / 〇 in toluene, 8.7 g, 30.1 mmol), and reacted under stirring and heating under reflux for 3 hours The reaction mixture was cooled with 50 ml of ice water containing 10 liters of concentrated sulfuric acid, extracted with ethyl acetate (30 ml x 3), and the extract was dried over magnesium sulfate. The reaction mixture was concentrated under reduced pressure, and distilled After removing ethyl acetate, 2.54 g of a colorless oil was obtained. This was purified by column chromatography using chloroform as a dissolution solvent to obtain 3,5-dai-dimethyl as a colorless oil. Carbamidinethiobenzyl g, yield 38.5%). Α! Η-leg (CDC13); 2.9 coffee, s, Me χ 2), 2 94 (6H, s, heart χ 2), ugh 4.50 (2Η, s, CH2), 7.38 (2Η, s, ph-H), 7.44 (1Η, s, ph-H) '3] 32] 0D0] 39 200410926 Example 11 Production of 3,5-dimercaptobenzyl alcohol

N_Me 將3,5-貳-二曱基胺曱醯硫基〒醇藉由使用氫氧化鈉 之常法加水分解,得到3 5 5 -二魏基〒醇。 實施例1 2 3,5-二巯基〒硫醇之製造N_Me decomposes 3,5-fluorenyl-difluorenylaminethiothiol by the usual method using sodium hydroxide to obtain 3 5 5 -diweilfluorenol. Example 1 Production of 2 3,5-Dimercaptofluorenylthiol

NaOH N-Me / MeNaOH N-Me / Me

將3,5-貳-二曱基胺曱醯硫基〒醇藉由使用氫氧化鈉 之常法加水分解,得到3,5-二巯基〒醇;將其與實施例17 同樣方式溴化,得到3,5-二毓基苄基溴化物;將其依照常 法與硫化尿素反應後進行分解反應,得到3,5-二巯基〒硫 醇。 實施例1 3 3,5-貳-二甲基胺曱醯硫基苯胺之製造 40 313210D01 200410926 〇3,5-fluorenyl-difluorenylaminethiothiol is hydrolyzed by a conventional method using sodium hydroxide to obtain 3,5-dimercaptanol; brominated in the same manner as in Example 17, 3,5-Dimercaptobenzyl bromide is obtained; it is reacted with urea sulfide according to an ordinary method and then subjected to a decomposition reaction to obtain 3,5-dimercaptofluorenyl mercaptan. Example 1 Production of 3 3,5-fluorene-dimethylamine thioaniline 40 313210D01 200410926

NaN〇3 / HC!NaN〇3 / HC!

OO

依照常法將3,5 -貳-二曱基胺曱醯硫基T驗胺與 NaN03/HCl反應,得到3,5-貳-二甲基胺甲醯硫基苯胺。 實施例14 3貳·二甲基胺甲醯硫基节醯胺之製造The 3,5-fluoren-difluorenylamine thiosulfanyl T test amine was reacted with NaN03 / HCl according to a conventional method to obtain 3,5-fluoren-dimethylamine methylsulfanyl aniline. Example 14 Production of 3′-dimethylamine formamidinethiobenzidine

將3,5_氛-二甲基胺甲醯硫基安息香酸(3·28公克,1〇 耄莫耳)及亞硫醯氣(30毫莫耳)加入3〇毫升之曱苯中。將 ,合物於加熱㈣條件下反應2小時。除去過剩之亞硫驢 虱及曱苯後,將殘餘物注入氨-乙醇(1〇%,1〇毫升)中,得 到為無色結晶之3,5·戴-二曱基胺甲醯硫基节酿胺。熔點 264 至 265〇C。3,5-Diamino-dimethylaminomethylthiothiobenzoic acid (3.28 g, 10 mol) and thionine (30 mmol) were added to 30 ml of toluene. The compound was reacted under heating for 2 hours. After removing the excess sulfite donkey lice and acetophenone, the residue was poured into ammonia-ethanol (10%, 10 ml) to obtain 3,5 · dai-diamidomethylformamidinethione as colorless crystals. Stuffed amine. Melting point 264 to 265 ° C.

Ajjj列 15 3,5、貳-(3,5-二-第三丁基节硫基)苄酸曱媚之製造 3I3210D01 41 200410926Ajjj column 15 Manufacture of 3,5, hydrazone- (3,5-di-tert-butylsulfenyl) benzoic acid 3I3210D01 41 200410926

一―將3,5-二巯基苄酸甲酯(2〇·〇公克,1〇〇·〇毫莫耳)、3 5_ 第—丁基卞基溴化物(57.0公克,201.2毫莫耳)、〇 3八 克之18-冠-6(和光純藥製)及碳酸鈣(28.〇公克, 耳)、夭JL · 4冥 ^办加於丙酮350毫升中,加熱回流12小時。 播, 久應終了 ,除去析出鹽,再除去丙酮,將殘餘物藉由管柱層析法 精製(以正己烷:二氯曱烷=1 : 1溶析),得到53〇公克為 無色針狀結晶之3,5-貳-(3,5-二-第三丁基苄硫基)苄酸甲 _。熔點 102 至 103°C。-1-methyl 3,5-dimercaptobenzoate (20.0 g, 10.0 millimoles), 3 5-butyl fluorenyl bromide (57.0 g, 201.2 millimoles), 038 grams of 18-crown-6 (manufactured by Wako Pure Chemical Industries), calcium carbonate (28.0 grams, ears), and JL · 4 were added to 350 ml of acetone, and heated under reflux for 12 hours. Sowing, after a long period of time, the precipitated salt was removed, and then the acetone was removed. The residue was purified by column chromatography (solving with n-hexane: dichloromethane = 1: 1) to obtain 53 g of colorless needles. Crystalline 3,5-fluorene- (3,5-di-tert-butylbenzylthio) benzylformate. Melting point is 102 to 103 ° C.

Al^MlUCDCg; 1.29(36H,S, ter卜BiHI),3.70(3H,S,Me), 3·90(4Η,S,SCH2), 7·1〇(4Η,S,ph-Η),7·29(3Η, br-S,ph-H),7·77(12Η,S,ph-H) 這1施例1 3,5-貳-(3二-第三丁基〒硫基)〒醇之製造 42 313210D01 200410926Al ^ MlUCDCg; 1.29 (36H, S, Ter BiHI), 3.70 (3H, S, Me), 3.90 (4Η, S, SCH2), 7.10 (4Η, S, ph-Η), 7 · 29 (3Η, br-S, ph-H), 7.77 (12Η, S, ph-H) Example 1 3,5- 贰-(3-Di-tert-butyl〒thio) 〒 Manufacture of alcohol 42 313210D01 200410926

克,86·0亳莫耳)溶 :)卞^甲^ (52.0々 同時將二氫武(2 P ㈣中並保持於35°c以下 克,佩〇毫莫耳氧基μ呂酸鋼之70%甲苯溶液⑻ 终了後,將反應液注二在相同條件下授拌2小時。反 分鐘攪拌後分離曱笨屉〜10%鹽酸溶液500毫升中,經 後,藉由管;k層析^ 以無水硫酸錢水。濃縮曱苯. 黏稠性物質之3 5二广製(以二氯甲烷溶析)’得到為無g 公克。 一弟二丁基卞硫基)苄醇4.96G, 86.0 mol) Soluble :) 甲 ^ a ^ (52.0 々 at the same time in dihydrocarb (2 P ㈣ and kept below 35 ° C gram, per millimol oxygen μ Lu acid steel After the 70% toluene solution was finished, the reaction solution was injected and stirred under the same conditions for 2 hours. After stirring for 1 minute, it was separated into 500 ml of a 10% hydrochloric acid solution, and then passed through a tube; Anhydrous sulfuric acid is used. Concentrated toluene. The viscous substance is prepared by di-dichloromethane (dichloromethane) and obtained as g-free gram. Diethyl dibutylsulfanyl) benzyl alcohol 4.96

MMR(CDC13); 1.42(36H, S CH20),7·23-7·26(7Η m n:丄⑴ BU’,4·18(4Η, S,S,〉,4.67(2H,S, 7·42(2Η,s,ph| 實施例1 7 3,5备(3,5'二第三丁基〒硫基)〒基漠化物之製造 313210D01 43 200410926MMR (CDC13); 1.42 (36H, S CH20), 7.23-7 · 26 (7Η mn: 丄 ⑴ BU ', 4.18 (4Η, S, S,>, 4.67 (2H, S, 7.42) (2Η, s, ph | Example 1 7 3,5 Preparation of (3,5'-di-third-butyl sulfanyl) sulfonium desert 313210D01 43 200410926

CH2Br Μ·9意,貳(3,5-—-第三丁基苄硫基)T醇(49.〇公克, 毛、耳)及四溴化碳(28·2公克,85 〇 (四氫口夫喃)300毫升中,/价矣耳^於™ 89 κ古* 在1〇C以下將三笨膦(23·5公克, •笔莫耳)邊攪拌邊添加。反應液一旦 ,μ a. t ^ 坎局透明液’則慢CH2Br M · 9 means hydrazone (3,5--tert-butylbenzylthio) T alcohol (49.0 g, hair, ear) and carbon tetrabromide (28.2 g, 85.0 (tetrahydro) Buffalo) in 300 ml, / valence 于 89 89 89 κ * * Triphenylphosphine (23.5 g, • pen mole) was added while stirring below 10 C. Once the reaction solution, μ a . t ^ stump transparent liquid is slower

:,、出…色結晶。然後,將反應液於25至3(rc授掉一 :。慮去析出之結晶且濃縮。將殘餘物藉由管柱層析法精 ^正己烧:二氯甲烧=1:1溶析),得到為無色黏稠物 貝之3,5-嚴·(3,5_二第三丁基苄硫基)苄基漠化物34·8公 克0 tNMIUCDCg; 1·43(36Η,S,tert-Bu-Η),4.18(4H s 咖、 t 口“,〇,bUI2),4 44 (2h 5 CH2Br), 7. 23-7. 25 (7H, m, ph~H), ?.43(2H, S, ph-H) · ’ 實施例 18 樹枝狀體I之製造 313210D01 44 200410926: ,,… color crystals. Then, the reaction solution was decanted from 25 to 3 (the precipitated crystals were removed and concentrated. The residue was purified by column chromatography ^ hexane: dichloromethane = 1: 1 dissolution) 3,5-Yan (3,5-di-tertiary-butylbenzylthio) benzyl-desertide, which is a colorless viscous shell, 34.8 g, 0 tNMIUCDCg; 1.43 (36, S, tert-Bu -Η), 4.18 (4H s ca, t port ", 0, bUI2), 4 44 (2h 5 CH2Br), 7. 23-7. 25 (7H, m, ph ~ H),?. 43 (2H, S, ph-H) 'Example 18 Manufacture of dendrimer I 313210D01 44 200410926

使用3,5-貳-(3,5-二-第三丁基苄硫基)〒基溴化物 (3 4.0公克,5 3.1毫莫耳),藉由與實施例1 5同樣之方法, 得到2 1.0公克目標化合物之樹枝狀體1(無色黏稠物質)。 MMRiCDCls); 1.28 (72H, S, tert-Βυ-Η), 3.76(3H, S, Me), 3.89(12H, S? SCH2), 7. 10(12H, S, ph-H), 7.30(7H, S, ph-H), 7.78(2H, S, ph-H) 實施例1 9 樹枝狀體II之製造 45 313210D01 200410926Using 3,5-fluorene- (3,5-di-tert-butylbenzylthio) fluorenyl bromide (3 4.0 g, 5 3.1 mmol), the same method as in Example 15 was used to obtain 2 Dendrimer 1 (colorless, viscous substance) of 1.0 g of the target compound. MMRiCDCls); 1.28 (72H, S, tert-Βυ-Η), 3.76 (3H, S, Me), 3.89 (12H, S? SCH2), 7. 10 (12H, S, ph-H), 7.30 (7H , S, ph-H), 7.78 (2H, S, ph-H) Example 1 9 Manufacturing of dendrimer II 45 313210D01 200410926

使用樹枝狀體I (20.0公克,15.17毫莫耳),藉由與實 施例1 6同樣之方法,得到1 3.4公克目標化合物之樹枝狀 體Π(無色黏稠性物質)。 •H-NMRCCDClg); 1.40(72H, S, tert~Bu-H), 4.03(12H, S, SCH2), 4.68(2H, S, CH20), 7.09-7. 1 6 (1 2H, m, ph-H), 7.30(7H, S, ph-H), 7.76(2H, S, ph-H) 46 3J3210D01 200410926 實施例20 樹枝狀體III之製造Using dendrimer I (20.0 g, 15.17 mmol), in the same manner as in Example 16, 13.4 g of the target compound was obtained as a dendrimer Π (colorless viscous substance). • H-NMRCCDClg); 1.40 (72H, S, tert ~ Bu-H), 4.03 (12H, S, SCH2), 4.68 (2H, S, CH20), 7.09-7. 1 6 (1 2H, m, ph -H), 7.30 (7H, S, ph-H), 7.76 (2H, S, ph-H) 46 3J3210D01 200410926 Example 20 Manufacturing of dendrimer III

使用樹枝狀體II (13.0公克,10.0毫莫耳),藉由與實 施例1 7同樣之方法,得到6.7公克無色黏稠性物質之目標 化合物樹枝狀體III。Using dendrimer II (13.0 g, 10.0 mmol), in the same manner as in Example 17, 6.7 g of the target compound dendrimer III was obtained as a colorless viscous substance.

47 313210D0I 200410926 -NMR(CDC13); 1·40(72Η,S,tert-Bu-H),4.02(12H,S,SCH2),4·41(2Η,S, CH2Br),7·10-7.20(12H,m,ph-H),7.30(7H,S,ph-H),7·70(2Η,S,ph-H) 實施例21 樹枝狀體IV之製造.47 313210D0I 200410926-NMR (CDC13); 1.40 (72Η, S, tert-Bu-H), 4.02 (12H, S, SCH2), 4.41 (2Η, S, CH2Br), 7.10-7.20 ( 12H, m, ph-H), 7.30 (7H, S, ph-H), 7.70 (2 Η, S, ph-H) Example 21 Manufacturing of dendrimers IV.

48 313210D01 200410926 使用樹枝狀體III,藉由與實施例1 8同樣之反應製造 树枝狀體iv。亦即依照常法將樹枝狀體ΙΠ、6,8_二硝基— 2,肛二巯基喹唑啉及L8-二氮雜雙環(5,4,〇)十一碳_7_烯於 四氫D夫喃中反應,製造樹枝狀體ιν。 22 3,5·二巯基苄醯胺之製造48 313210D01 200410926 Dendrimer iv was produced by the same reaction as in Example 18 using dendrimer III. That is, dendrimers ΙΠ, 6,8_dinitro-2, anal dimercaptoquinazoline, and L8-diazabicyclo (5,4, 〇) undec-7_ene are prepared in accordance with the usual method React in hydrogen D furan to produce dendrimers ιν. 22 Manufacture of 3,5 · Dimercaptobenzamine

將3,5 -貳-二曱基胺曱醯硫基苄醯胺藉由常、车 φ,女使用氫 革化鋼予以加水分解,製造3,5 -二魏基节酸胺。The 3,5 -di-fluorenylamine thiothiobenzylamine was hydrolyzed by using a hydrogenated leather steel to produce 3,5 -diweilenic acid amine.

3,5·二巯基笨胺之製造 Η2ΝManufacture of 3,5 · Dimercaptobenzamine Η2Ν

MeMe

將3,5〜貳-二曱基胺曱醯硫基苯胺藉由常法使用氣% 化鋼予以加水分解,製造3,5 -«—統基笨胺。 < “ 复農1 列24 3,5-二巯基笨腈之製造 313210D01 49 200410926 /=( N_Me S-<3,5 ~ 贰 -Difluorenylamine and thioaniline are hydrolyzed by a conventional method using a gas% steel to produce 3,5-«-allylbenzylamine. < "Fonin 1 Column 24 Manufacture of 3,5-Dimercaptobenzonitrile 313210D01 49 200410926 / = (N_Me S- <

+ NaOH N 一 Me+ NaOH N a Me

SHSH

SHSH

Me 將3,t貳-二曱基胺曱醯硫基笨腈藉由常法使甩言 化鈉水溶液予以加水分解,製造二巯基笨腈。虱革 1J&1L25 第三丁基苄硫基)苄酸甲酯之製造Me decomposes 3, t 贰 -diamidylamine 曱 醯 thiobenzonitrile by a conventional method to hydrolyze sodium hydroxide aqueous solution to produce dimercaptobenzonitrile. Lice leather 1J & 1L25 Manufacture of methyl benzate

3,5-貳-(3 將 弟一 丁基卞基溴化物(分子量28 皂贫订、 57.〇公克,201.2 毛莫耳)及碳酸鉀(分子量138.21,28〇 ^丄 公克,202.0毫莫耳) ^於丙嗣350毫升中,將混合物於加熱回流下反應^ ;;Γ除去丙酮及鹽類之後,將殘餘物以二氯甲烧做為展 =谷媒?由管㈣析法精製’得到為針狀結晶之3,5_戴 (,5 - 一-第二丁基卞硫基)〒酸甲酯。 复例26 3、二甲基胺羰硫基—5-羥基〒酸甲酯之製造 313210D01 50 2004109263,5-fluorene- (3 di-butyl fluorenyl bromide (molecular weight 28 soap, 57.0 g, 201.2 mormol) and potassium carbonate (molecular weight 138.21, 28 mol g, 202.0 mmol) Ear) ^ In 350 ml of propionate, the mixture was reacted under heating and refluxing; Γ After removing acetone and salts, the residue was burned with dichloromethane as a solution = cereal medium? Refined by tube decantation method ' Methyl 3,5-de ((5,1--second-butylsulfenyl) thio) acetate was obtained as acicular crystals. Multiple Example 26 3. Dimethylaminocarbonylthio-5-methylammonium methyl ester Made in 313210D01 50 200410926

HOHO

HO S f O 一 MeHO S f O One Me

依照實施例5及6之操作法,使用半量之二甲基硫代 月女曱基氯化物’將3 -二曱基硫代胺曱醯基-5 -經基节酸甲 酷以自3,5·二羥基〒酸甲酯為26%產率製造。熔點135至 138°C。 1H-NMR(CDC13) ; 3·00 & 3·05(6Η, o.oovin, 〇rs, 〇H), 3.84(3H, s, Me), 7.05, 7.47 & 7.78(3H, s, s & s, Ph*H) 實施例27 第2圖至第4圖為本發明單_電子隧道元件一例之术 式圖。第2圖為平面圖’第3圖為第2圖之灯線處之磨 面圖,第4圖為將元件之接合部分擴大之概念圖。 中之記號9,表示下部聚醯亞胺LB膜層3、巾間電極/ 及上部㈣亞胺LB膜層5所形成之電子㈣層。s 電子随道元件中’基板!上之下部電極 Γ?空錢法形成膜厚⑽毫微来且無氧化膜形成之 -電極。再者’在下部電極2上 二 3】32】〇D〇】 51 200410926 T合度之聚醯亞胺LB膜累積25層後,藉由化學處理使i 亞胺化,形成下部聚醯亞胺LB膜層3。 繼而,將上述式25表示之聚醯亞胺與上述式24表示 之樹枝狀物以成為500: 1之方式混合,與下部聚酿亞:、 B膜層3同樣地,形成由本發明之樹枝狀體分子插入聚职 亞胺LB膜之單分子層所形成之中間電極4。從分子佔有: =之貫驗可知,該中間電極4中約1;^角之面積幅度上 上述式24之化合物約觸個’而具有做為中間電極 之有效機能。 在中間電極層4之上,與下部聚醯亞胺Μ膜層3同 :::式’將聚醯亞胺LB膜累積3〇層後,藉由化學處理 八亞化,形成上部聚醯亞胺LB膜層5。 極2:後’於上部聚酿亞胺⑶膜層5之上,以與下部電 a 乂又之形式’使藉由真空蒸鐘產生膜厚50i 100nm 然乳化膜形成之Au電極所構成之上部電極6形成 預備電極7,而;$,丨g σ 而付到早—電子隧道元件。在本實例中,上 Γ貝考電極7與上部電極6皆係為了比較本發明材料特性 上之差異而預備性地形成者。 防止=者’上述上部電極6與上部預備電極7製成時,為 下部電極2邊緣之絕緣破壞.,及下部聚醯亞胺Μ 起中間電極層4及上部聚醯亞胺以膜層5之缺陷引 8且路’積層形成將下部電極2邊緣包覆之邊緣被覆層 以此寺刼作,製成元件面積5〇χ _ 隧道元件。 早电子 313210D01 52 200410926 利用本發明化合物所製成之單一 下部兩& 早包子隧逼兀件,由於 係使:2 2與上部電極6之電阻從數百ΜΩ至數十0Ω, 2端子法測定,於低Μ溫器中_定溫度下,設定 v、、及笔壓17,藉由電流計18測定電流。 絕對溫度5 ·2Κ中測定之特性 圖,雖A c %性如弟5圖所示。由此 口雖為5.2K之極低溫,但為單一電 間隔雷厭止 , 隧暹兀件特性之等 電壓Π 〜 很據早電子隧道現象之步級 <,若中間電極4與下部電極2 量Ar,+ 4上部電極6之容 … 笔子電荷量為e,則可知e/c成Λ _ ^ 根據第<5 m ^ r- 攻為一疋之電壓幅度。 像弟5圖,該電壓幅度即使第〇‘ mV ^ 1§ . . „ s ^ , 弟1 次亦為約 100 月_地主現早一電子隧道特性。 再者’本說明書中%表示重量%, 表示。 /合媒比係以容量比 [發明之效果] 本發明之樹枝狀體化合物,若受 激立即感應發光,可做為例如記憶開構:旎引起之刺 【圖式簡單說明】 ㈣構柯料之用途。 第1圖表示本發明單一電子隧道开 圖。 1千各層構造之模式 圖 第2圖表示本發明單一電子隧道元 個實例之平面 第3圖為第2圖之χχ線處之斷面圖。 第4圖為將第2圖元件之接合部 刀獷大之概念圖。 第5圖為本發明之單一電,子隧道 υ〜 L件於5.2Κ呈現] 313210D0] 53 200410926 特性之圖形。In accordance with the procedures of Examples 5 and 6, using a half amount of dimethylthiomomidine chloride, the 3-dimethylthioaminoamidinyl-5-methylamino acid was converted from 3, Manufactured from methyl dihydroxyarsonate in 26% yield. Melting point is 135 to 138 ° C. 1H-NMR (CDC13); 3.0 & 3.05 (6Η, o.oovin, 〇rs, 〇H), 3.84 (3H, s, Me), 7.05, 7.47 & 7.78 (3H, s, s & s, Ph * H) Embodiment 27 FIGS. 2 to 4 are diagrams showing an example of a single-electron tunnel element according to the present invention. Fig. 2 is a plan view ', Fig. 3 is a ground view at the lamp line of Fig. 2, and Fig. 4 is a conceptual view of an enlarged joint portion of an element. The symbol 9 in the figure indicates the electron fluorene layer formed by the lower polyfluorene imine LB film layer 3, the interstitial electrode / and the upper fluorene imine LB film layer 5. s' substrate in electronic tracking device! Upper electrode and lower electrode Γ-The empty electrode is used to form an electrode with a thickness of ⑽ nanometers and no oxide film is formed. In addition, on the lower electrode 2, 3] 32] 〇D〇] 51 200410926 After accumulating 25 layers of polyimide LB film with T degree, i was imidized by chemical treatment to form lower polyimide LB.膜层 3。 Film layer 3. Then, the polyimide represented by the above-mentioned formula 25 and the dendrimer represented by the above-mentioned formula 24 are mixed so as to become 500: 1, and the dendrimer formed by the present invention is formed in the same manner as the lower poly-imide: B film layer 3. The body molecule is inserted into the intermediate electrode 4 formed by a single molecular layer of the polyimide LB film. From the molecular occupancy test, it can be seen that the area of the intermediate electrode 4 is about 1; the area of the angle ^ is larger than the compound of the above formula 24, and has an effective function as an intermediate electrode. Above the middle electrode layer 4 is the same as the lower polyimide M film layer 3 ::: Formula: After accumulating 30 layers of the polyimide LB film, the upper polyimide is formed by chemical treatment Amine LB film layer 5. Electrode 2: on the upper part of the upper polyimide ⑶ film layer 5 and the lower part of the electric a to make the upper part of the Au electrode formed by vacuum evaporation bell film thickness 50i 100nm and emulsified film The electrode 6 forms the preliminary electrode 7, and $, 丨 g σ is paid to the early-electron tunnel element. In this example, both the upper and lower electrodes 6 and 6 are preliminarily formed in order to compare the differences in the material characteristics of the present invention. To prevent the above, when the upper electrode 6 and the upper preliminary electrode 7 are made, the insulation of the edges of the lower electrode 2 is destroyed, and the lower polyimide M is formed from the middle electrode layer 4 and the upper polyimide is formed by the film layer 5. The defect lead 8 is formed by forming an edge coating layer covering the edge of the lower electrode 2 with this temple to make a device area of 50 × __ tunnel element. Early electron 313210D01 52 200410926 A single lower two & early bun tunneling element made of the compound of the present invention, because of the resistance of 22 and upper electrode 6 from several hundred MΩ to several tens 0Ω, measured by the two terminal method In a low-M thermostat, at a constant temperature, set v, and pen pressure 17, and measure the current with a galvanometer 18. The characteristic graph measured at the absolute temperature of 5 · 2K, although the A c% property is as shown in the figure of the younger brother. Although this port is at an extremely low temperature of 5.2K, it is a single electrical interval lightning-dissipation. The voltage equal to the characteristics of the tunnel element Π ~ According to the step of the early electron tunnel phenomenon < if the middle electrode 4 and the lower electrode 2 The amount of Ar, + 4 of the upper electrode 6 ... The amount of charge in the pen is e, then we can know that e / c becomes Λ _ ^ according to the < 5 m ^ r- voltage range. As shown in Figure 5, even though the voltage amplitude is 0 'mV ^ 1§... S ^, it is about 100 months once. _ Landlord's current electronic tunnel characteristics. Furthermore, "%" in this description means weight%, / The ratio of the media is the capacity ratio [effect of the invention] If the dendritic compound of the present invention is induced to emit light immediately upon being stimulated, it can be used as, for example, a memory structure: a thorn caused by 【[Schematic description of the structure] The purpose of the material is shown in Figure 1. Figure 1 shows the single electron tunnel of the present invention. Schematic diagram of the structure of 1,000 layers. Figure 2 shows the plane of an example of the single electronic tunnel element of the present invention. Figure 3 is the χχ line of Figure 2. Sectional view. Figure 4 is a conceptual diagram of the large joint of the component of Figure 2. Figure 5 is a single electric, sub-tunnel υ ~ L piece of the present invention presented at 5.2K] 313210D0] 53 200410926 Graphics.

1 基板 2 3 下 部 聚 醯 亞 胺 LB膜 層 4 5 上 部 聚 醯 亞 胺 LB膜 層 6 7 上 部 預 備 電 極 8 9 電 子 隧 道層 10 17 步 級 電 壓 18 下部電極 中間電極層 上部電極 邊緣被覆層 單一電子隨道元件 電流計1 Substrate 2 3 Lower polyimide LB film layer 4 5 Upper polyimide LB film layer 6 7 Upper preparation electrode 8 9 Electron tunnel layer 10 17 Step voltage 18 Lower electrode middle electrode layer Upper electrode edge coating single electron Tracking component ammeter

54 313210D0154 313210D01

Claims (1)

200410926 拾、申請專利範圍: 1· 一種3,5-二巯基苄醇。 2 · —種3 5 5 -二魏基〒硫醇。 3. —種3,5-貳-二曱基胺曱醯硫基苄酸甲酯。 4· 一種3,5-二曱硫基苄酸甲酯。 5 · —種3,5 -二魏基〒酸曱酷。 6 · —種3,5 -二魏基〒酸乙醋。 55 313210D01200410926 Scope of patent application: 1. A 3,5-dimercaptobenzyl alcohol. 2 · —Species 3 5 5 -diweikylamidine mercaptan. 3.-A species of methyl 3,5-fluorenyl-difluorenylaminothiobenzoate. 4. A methyl 3,5-difluorenylthiobenzoate. 5 · —Species 3,5 -diweikylide acid is cool. 6 · —Ethyl 3,5 -diweisyl gallate. 55 313210D01
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