TW200409203A - Epitaxial growth method for metamorphic strain-relaxed buffer layer having nitrogen compound - Google Patents

Abstract

The present invention provides an epitaxial growth method for metamorphic strain-relaxed buffer layer having nitrogen compound, which uses the step-gradual or linear gradual method to grow the (AlyGa1-y)1-xInxN) metamorphic strain-relaxed buffer layer, and to employ the epitaxial growth technique for (AlyGa1-y)1-xInxN) and the metamorphic strain-relaxed buffer layer structure to develop the nitrogen compound semiconductor device.

Description

200409203 Description of politics and invention: [Technical field to which the invention belongs] The present invention relates to an epitaxial growth method with a nitrogen compound metastable stress release buffer layer, a nitrogen compound semiconductor heterostructure with a function of releasing internal stress of a material, and a method for producing the same, especially It refers to an epitaxial growth technology with (AlyGai-y) i-xInxN) metastable stress relief buffer layer. [Previous technology] The present invention belongs to the application of a metamorphic indium gallium nitride / indium nitride (InGaN / InAIN) heterostructure, especially with a method of using a metastable buffer layer to grow high indium content. A method of indium gallium nitride (InxGai_xN) and indium aluminum nitride (InxAli-xN) structures is an epitaxial growth method with a nitrogen compound-stable stress release buffer layer with low structural residual stress and low internal material defects. According to the development of GaN materials, more than 20 years have passed. Because the energy gap distribution of this series of materials covers the ultraviolet to yellow-green light bands, GaN materials have become the mainstream for the development of blue and ultraviolet light-emitting devices. However, in the preparation of early Group III-Nitride semiconductor epitaxial materials, it was limited by the lack of substrate materials that matched the lattice constants, which resulted in slow development. The origin of the research and development of gallium nitride materials originated in 1983 by S. Yoshida et al. Who used molecular beam epitaxy to grow aluminum nitride (A1N) material as a buffer layer on a sapphire substrate at high temperature. Then, gallium nitride is grown thereon, and this method obtains a better gasification layer with a better aa junction. Immediately following the research group of Professor I Akasaki of the famous Furiya University, it was found that the organometallic chemical vapor deposition method (MOCVD or 0MVPE) was used to uniformly lay on the supervised gemstone substrate, and a layer of nitride was first grown at a low temperature (~ 6⑽. ◦). Aluminum thin films, and then gallium nitride grown at a high temperature (~ 100QC) can obtain a mirror-like stupid crystal quality. Judging from the development history of GaN epitaxial materials, since it is impossible to grow to obtain a large nitride substrate with a large area of 200409203 and few defects, currently, most of them can only use sapphire or SiC as the gallium nitride growth substrate. The growth technology of the buffer layer is the key to obtaining a high-quality GaN epitaxial layer. Since this buffer layer involves heterogenerous growth, how to use the characteristics of the buffer layer to grow high-quality GaN films is a prerequisite for the development of GaN-based devices. The current buffer layer technologies used in growing GaN materials are: Low-temperature growth A1N buffer layer The earliest buffer layer material used is A1N. In 1988, H. Amano and I. Akasaki et al. Used M0CVD to grow A1N on sapphire at a low temperature of 600 ° C, and then grown GaN at a high temperature of 1040 ° C to obtain high-quality GaN with a carrier concentration of about 3xl017cnT3 at room temperature. The electron mobility is about 350 ~ 430cm2 / V-sec. Low-temperature growth GaN buffer layer In 1991, S. Nakamura used MOCVD method to grow GaN at 450 ~ 600 ° C as a buffer layer, and then increased the temperature to above 1000 ° C to grow GaN after about 4 // m. Its carrier concentration was low at room temperature. Up to 4xl016 cm_3, the electronic activity rate is as high as 600 cm2 / V-sec. In general, the thickness of the buffer layer is preferably about 200A.

InN / GaN or InN / InGaN / GaN buffer layer T. Kchi et al. Used InN as the buffer layer material, and obtained a higher electron mobility when growing at 300A thickness at low temperature (500 ~ 600 ° C), and its dislocations were lacking. The gap is only 6x 108cirT2, and if the GaN layer is grown at 500 ° C with a thickness of about 200A as the buffer layer, the dislocation gap is as high as 4 × 109 × 11_2. 1 ^ 8 (3〇 " ^ [61'11 et al. Use 11163 ! ^ / 6 & 1 ^ As a buffer layer, a single quantum well LED structure is grown thereon, which proves that high-quality materials can also be obtained with InGaN as a buffer layer. X. Zhang et al. At 525 C A multilayer (3 ~ 12) AlxGal-xN (5nm) / GaN (3nm) superlattice structure is used as the buffer layer, and the p-GaN is grown at a temperature higher than 200409203. The result indicates that the structure of the multilayer buffer layer is higher than that of the single layer buffer. The layer has a better PL spectral intensity response. *

The growth of Mi Xiangyajing-EL0G s. Nakamura et al. First proposed the Epitaxial Lateral 〇vergr〇wth method (also known as the "listening" method) to grow high-quality gallium nitride materials. The method firstly grows GaN on the sapph i re substrate by about 2 #m with M0CVD, and then places SiO2 on it as a mask, as shown in the first figure, and then grows the gallium nitride buffer after the opening. Layer, on which the laser structure grows. The GaN grown by this method cannot be extended upward due to dislocation defects (disl0catiON) below SiO2, so the defect density of the upper layer GaN is reduced, but the GaN above the opening still has many defects. At the same time, there will be crakes in the middle of the upper part, so the area of high-quality materials is limited. a. usui proposes that using two ELGG methods to grow GaN can further reduce the defect density in the material. Invited air-growth method Pendeo-Epi taxv T. Zheleva and K. Lithicum et al. Proposed a four-length elgg substrate on a SiC substrate using a suspended-growth method, as shown in the second figure. S. Touch and others also use this method to grow on the sapphire G substrate, you can get better material # material quality. The above-mentioned different buffer layer growth technologies are mainly aimed at making the growth slow, and the GaN material above the layer can obtain a high-quality worm crystal layer with a low background concentration and low differential discharge defects. At present-generally speaking, after growing the buffer layer at a low temperature (5G () ~ 6G (rc)), and then continue to grow a Si-doped N-type hafnium film at a high temperature (1000 ~ 1100. (:), the thickness is about 2 ~ 3 / Between zm, its defect density is about ~ 109cm_3. At present, there are researches on the M group III nitride nitride materials, mainly gallium nitride, indium nitride, nitride binary compounds, and nitrides. Indium gallium and nitride nitride are mainly ternary compounds. 200409203 The ternary compounds are mainly related to their material properties. However, many materials need to be published. However, indium aluminum nitride (InxAll_xN) ternary compounds composed of indium nitride and aluminum nitride and nitride Related research on indium aluminum gallium ((AlyGaw) hIruN) quaternary compounds has been slow to date due to the limitation of material properties. Generally speaking, due to

The lattice constants of GaN and InN are different, so there is a certain limit to the dissolution rate in GaN. In the growth of nitrogen indium gallium (InxGai_xN), as the content of indium increases, phase separation will occur due to phase separation. ) To produce a heterogeneous mixture, resulting in a non-% composition ratio, and this phenomenon also occurs in hafnium nitride (ΙηχΑΙ ^ N), which is also the main challenge in the process of growing indium aluminum nitride materials. ▲ However, the research and development potential of indium aluminum nitride material is mainly that if a positive composition ratio can be appropriately used, a lattice-matched heterogeneous energy gap structure can be obtained. In traditional III-N nitride heterostructure systems, wide / narrow energy gap materials (such as A1 GW / GaN, GaN / 1 nGaN) have mismatched lattice constants, which leads to the growth of the material in order to avoid the lattice. There are many restrictions on the generation of defects, which also affect the overall performance of the component. If it can be used with the In sub-material to form a hetero-junction, the internal stress of the material caused by the mismatch of crystals can be controlled. For example, a lattice-matched heterostructure can be formed between n ″ and ㈣ to avoid stress from causing material defects and unstable material characteristics. On the other hand, the quaternary compound growth technology of gallium halide series materials, such as scale = indium gallium (nGaP), has been improved day by day1. Sifan compound materials ((MU · aU〇ys ) Until now, the development has been slow, and the mastery of A1I_ material growth technology and understanding of material characteristics is the key to the development of gallium nitride series quaternary compound materials. The development of gallium nitride materials mainly focuses on In the field of semiconductor optoelectronic components, light-emitting diodes and laser diodes, especially the era & toe talk about 200409203 and Professor L Akasakl and many other research teams have successively grown in gallium nitride materials, standing light emission and laser A major breakthrough was achieved in the development of a polar body. The group's vigorous development in the field of optoelectronic element manufacturing and characteristics research of this series of materials is mainly due to the blue-violet light emission achieved by nitride recording materials: Yes. However: Phase: The potential of gallium nitride materials in the development of optoelectronic components. It is still very much published on the material reading-there are some characteristics of common semiconductor materials ^ In terms of sub-conductivity, Shishenhua's gallium series materials have the best performance. ^ ^ On the material miscellaneous material, the performance of gallium is as good as that of its carbide carbide material, although it has excellent thermal conductivity characteristics. There are suitable heterostructure materials for matching, so the application of this material is limited to 270 pieces. It is particularly noteworthy that nitride nitride materials not only have good electron mobility, but also have high disintegration. Saturation rate and good thermal conductivity of gallium, galvanic, emulsified indium and rhenium into a heterojunction interface structure, therefore, gallium nitride series materials = as the development of high temperature operation, high power, high electron mobility transistor material 〃 current nitrogen In the development of high-electron mobility transistors for the gallium material series, the main ^ (A1GaN / GaN) ^ 1 ^ ° has two polarization characteristics (spontaneous f ° Ω), and the ㈣ caused by heterostructure systems Polarization field 2 = rnie field) (as shown in the third figure) 'causes a large number of electrons to gather at the hetero-shell junction, and the shift of the hetero-band structure (ban "= the material line can Junction shape High electron density f X -dimensionally good cloud structure. Therefore, the research and understanding of the characteristics of the three- and five-group nitride material heterojunctions 2 200409203 dimensional electron cloud really help the research and development of high-power HEMT. In the traditional field In an effect transistor, electrons must be transported in a highly doped channel layer. However, the high concentration of doping also increases the probability that the electrons are affected by impurity scattering during the movement, which limits the application of the device in u. In order to further improve the characteristics of high-frequency field-effect transistor components, the field-effect transistor with an isotope interface gradually plays an important role.

The development of high electron mobility transistors mainly originated in the 1960s. YΗ · Kroemer and RL · Ruru proposed the concept of heterostructure. The fourth perturbation (a) is a heterojunction structure composed of aluminum gallium arsenide / gallium arsenide. Since the content ratio of arsenide can be appropriately adjusted so that the crystal length and Kunhualu match each other, so The problem of lattice defects caused by stress at the worm crystal interface is not caused by heterogeneous junctions formed by two semiconductor materials with different energy gap sizes. ^ The Fenni level must be equal, thus causing energy bands. ; Two; continuous. As shown in the fourth figure (b), the discontinuous conductive band falls below white, so that this part of the band structure forms a triangle-like, discontinuous quantum energy well of about 8GA. Such a heterostructure can be obtained without doping. 丨 ancient labor, meanwhile, the electrons move, and the impurity scattering effect is eliminated at 1: 1

The rate is improved, which in turn makes the device have better high-frequency characteristics. The structure of the phase ㈣τ is mainly based on the heterogeneous interface of the fragmented gallium. The purity of the gallium is shifted, and the mobility of the broken gallium material (mobUity) becomes the main operating frequency of high-speed components ... ^ -atthe, s ,, , Blakeslee ^ 7 ^^^ (including pseudomorphic-j ^, p_ /, sub-movement rate and thunder; ± & It is mainly based on electricity. The high rate of indium gallium arsenide and InGaAs (InGaAs ): As the electron channel layer (chflnn < a1),-compound / gallium arsenide as the stromal junction a7610. The fifth figure (a) is using aluminum gallium arsenide as the "junction", mainly using Kunhua Gallium is close to Kunhuaming Gallium 10 200409203. The two-dimensional electron cloud formed at the interface is used as the electron channel layer. In the design of the virtual-high-electricity · transistor transistor, arsenization with higher electron mobility is used. Indium gallium is used as the electron communication layer. As shown in Figure 5 (b), a layer of indium gallium arsenide is added between the aluminum gallium arsenide / gallium arsenide as the electron channel layer. The lattice constants are larger than the lattice constants of Kunhuaming gallium and sanded gallium. As the electron channel layer, indium gallium indium gallium will cause compressive strain due to the lattice constant mismatch. Generally speaking, the larger the indium content in indium gallium arsenide, the higher the electron mobility. The larger the indium content, the higher the lattice mismatch. At this time, when the thickness of the channel layer is larger than the critical thickness of the load-bearing stress, the material will have defects φ to release the stress. Degradation, which in turn affects device characteristics. In general virtual-high electron mobility transistors, the indium mole ratio of indium gallium (inxGaixAs) is limited to not more than 0.2, mainly to avoid high levels of indium and lead to stupidity. Decreased crystal quality. In order to further increase the indium content while avoiding the occurrence of material defects caused by mismatched lattice constants, another so-called metastable structure is proposed. The so-called "metastatic- "High electron mobility transistor" (metamorph ic-duty τ Μ-_τ), the structure of which is shown in the sixth figure, is a step-change method to gradually increase the indium content of indium gallium, therefore, indium gallium With gallium halide material The material stress caused by the lattice constant mismatch will be gradually released due to the gradual change of the indium content. In addition, because the active layer region is intentionally far away from the substrate material, thereby avoiding defects near the substrate material to affect the characteristics of the active layer of the device. The above brief introduction The development of gallium nitride series materials in the growth technology of the buffer layer structure and the growth technology of the gallium nitride series of ternary compound materials and the development of paper power. The purpose of the present invention is mainly in the research and development of metaQrphic should: release the buffer structure Group III-5 nitride light-emitting element and high-speed wheel transmission element. 11 200409203 [Summary of the Invention] Therefore, the main purpose of the present invention is to provide a nitrogen compound metastable stress that has mostly completed the nitrogen compound stress relief effect. Method for epitaxial growth of release buffer layer. The present invention includes a nitrogen compound metastable stress relief buffer layer structure and a low stress residual nitrogen compound semiconductor device structure. In order to achieve the above-mentioned object, the present invention provides a method for manufacturing a high-indium-content nitrogen compound semiconductor stress-relieving buffer layer structure having a stress-releasing effect, including the following steps: setting a base layer; forming a nitride on the base layer A gallium nucleation layer and a multilayer buffer layer structure are formed on the nucleation layer. The multilayer or linear gradient stress relief buffer layer structure may be indium nitride and gallium ((AiyGai-y) i-xInxN) , And \ can choose from 0 ~ 1, and y can choose from 0 ~ 1. In addition, the epitaxial growth conditions of each stress release layer, such as temperature (gr0wth tperature), V / III & (flux rati〇), and growth rate (by rate), etc., are dependent on each stress release The material characteristics of the layer and the composition and thickness of the layer are appropriately adjusted. The main spirit is that the stress generated by the growth of the mismatched crystal lattice between the nitrogen compounds is released in the stress relief buffer structure, thereby reducing the lattice defects caused by the stress release of the element structure itself. In addition, the present invention can be combined with a back-end process to complete a method for manufacturing a nitride semiconductor light-emitting diode having the above-mentioned method for growing a worm crystal with a nitrogen compound-stable stress release buffer layer, which includes the following steps: 12 200409203 Setting a base layer ; Wherein, the base layer ㈣ can be sapphire, nitrogen cut ⑽, dream (Si), deified record (GaAs) or carbonized hard (yc) · The above stress release is formed on the base layer material A buffer layer, wherein the material of the stress relief buffer layer is indium nitride gallium-((AlyGai-y) i-xInxN)? Wherein the composition of each layer of the stress relief buffer layer can be adjusted in steps or linearly or Gradient or two or more; $ The necessary structure required to form a nitride light-emitting diode on the above stress relief buffer layer, the reduction structure includes at least an active layer structure and two upper and lower cladding layer structures, where:忒 The active layer structure is a heterogeneous bandgap structure composed of two different bandgap materials. Wherein, the material of the active layer is indium aluminum gallium nitride ((AlyGaiy) ixInxN), aluminum hafnium nitride (InU), gallium nitride (GaN) or indium gallium nitride (InxGai xN). Lu Among them, the crystal layer constant between the active layer material and the cladding layer material matches or the active layer is within a cHtical thickness. Wherein, the material of the upper and lower cladding layers in the above necessary structure of the light emitting diode is indium aluminum gallium nitride ((AlyGai χΙηχΝ) having a larger energy gap than the active layer. Among them, the above structure of the necessary structure of the light emitting diode The material of the coating layer 13 200409203 The lattice constant and the lattice constant of the active layer material match or are within a threshold thickness. Among them, the material of the lower coating layer in the above necessary structure of the light emitting diode The lattice constant matches the lattice constant of the material of the uppermost layer of the stress relief buffer layer or is within a critical thickness. The application of the present invention to the structure of a nitride semiconductor light-emitting diode has its main spirit, Stupid crystal growth technology in the gallium nitride ((AlyGai 丄 InxN) metastable stress release buffer layer, which can reduce the residual stress inside the device structure, can effectively reduce the defects caused by the stress release of the device material, and improve the device structure Worm crystal quality, which can improve component performance. In addition, 'this fortune can be completed in combination with the back-end process to have a nitrogen compound A method for manufacturing a nitride semi-high electron mobility transistor by a method for growing a worm crystal of a punching layer, comprising the following steps: setting a base layer; forming a stress relief buffer layer above the base layer, wherein the stress relief buffer layer material Indium aluminum gallium nitride (AlydklmN), indium gallium nitride (InxGai χN) or indium aluminum nitride (InxAh-xN). Among them, the indium content of each single layer of the stress relief buffer layer is increased layer by layer. A high indium content indium gallium nitride (InyGawM) channel layer is formed on the indium aluminum nitride stress relief buffer layer, 14 200409203, wherein the material lattice constant of the channel layer is the same as that of the above gallium nitride or indium nitride. The crystalline constant of the top material of the stress relief buffer layer matches or is within a critical thickness. A high energy gap material layer is formed on the above channel layer, and the material of the layer is InxAli- xN), wherein the crystalline constant of the material of the high energy gap material layer matches the lattice constant of the channel layer material or is within a critical thickness. The following is further described with reference to preferred embodiments of the present invention. Those who are familiar with the related technology of the present invention will implement the hot parts according to the descriptions in this specification. [Embodiment] The main spirit of the present invention is to use J. crystal growth stress relief buffer "Medium aluminum gallium ((AUGa (B) xInxN), and the growth of the indium halide can be adjusted after the growth stress is adjustable. The nitrogen compound semiconductor element η used by the seven females of the pedestal is under no stress to trap, thereby improving the characteristics of the device. It can reduce the lack of crystal lattice caused by stress release as an example, and with the figure | the light emitting diode and high electron mobility, respectively, and the figure below, illustrate the application examples of the concept of the present invention, and hope that the Your reviewers and the present invention have a more detailed understanding and enable those familiar with the technology to implement it, and ^. Τ, ^ The following is only to explain the preferred embodiment, not to limit the present invention Fan Garden, ^ ^, so any scale or modification based on the creative spirit of the present invention is still a model arm intended by the present invention. First, please match the diode epitaxial structure in Fig. 8 (10). What ’s more, the conventional nitride semiconductor light emitting photodiode has a base layer (11). The material of the 15 200409203 base layer (11) may be sapphire, gallium nitride (_, sic) First, a nucleation layer (i2) is formed on the base layer, and then a buffer layer (⑴) is formed on the nucleation layer (12). The materials of the nucleation layer (12) and the buffer layer (13) It can be a nitride structure (A1N) or a gallium nitride layer, respectively. It is necessary to form a light-emitting diode on the buffer layer (13). The necessary structure includes at least an active layer (15) and In the lower cladding layer (⑷ and upper cladding layer (16) #, the active layer structure is composed of two different energy gap materials

It has a heterogeneous structure with multiple layers, a sentence, a black stage b 44- 1 c 1 \ ^ a a gap material 枓 (151) and a low energy gap material (152). In addition, the lower cladding layer is an N-type doped high energy gap material, and the upper cladding layer is a P type doped high energy gap material. The two-gap material in the active layer structure (15) is gallium nitride (GaN), and the low-gap material is indium nitride (LN); and the upper and lower cladding layers are made of aluminum gallium nitride (A1GaN). ). Generally, the lattice constants of the materials between indium gallium nitride, gallium nitride, and aluminum gallium nitride do not match each other ’, so there is residual stress between the heterojunctions formed, so

Force release easily leads to an increase in internal defects of the material, affecting the epitaxial quality and internal characteristics of the device. In addition, as shown in the ninth figure, the nitride semiconductor light emitting diode structure (20) of the present invention is used. The light emitting diode has a substrate layer (21), and the material of the substrate layer (21) may be sapphire, gallium nitride (GaN), silicon (si), gallium arsenide (GaAs), or carbide Silicon (Sic). A first stress relief buffer layer (22) is first formed on the base layer (21), wherein the first stress relief buffer layer (2004) is a material of indium aluminum gallium nitride ((AlyGai_y) 1_xInxN). In addition, a second stress relief buffer layer (23) is formed on the first stress relief buffer layer (22). Its material is indium aluminum gallium nitride ((AiyGahh-xinxN)), but the second stress relief buffer layer The indium content ratio of the layer (23) is slightly larger than the indium content ratio of the first stress release buffer layer (22). Based on this principle, indium aluminum nitride stress release buffer layers with different indium content ratios are grown one by one, and the buffer is released with the stress. As the number of layers increases, the ratio of indium to indium also increases. In addition, the uppermost layer of the plurality of stress relief buffer layers is the ηth stress relief buffer layer (24), whose material is indium aluminum nitride (InzAli zN), The ratio z of indium is the southernmost. In addition, the necessary structure for forming a light emitting diode is formed on the nth stress relief buffer layer (24). The necessary structure includes at least an active layer (26) and a lower layer. A cladding layer (25) and an upper cladding layer (27), wherein the active layer (26) The structure is composed of a plurality of layers of heterojunction structures composed of two different energy gap materials, including a chirped energy gap material (261) and a low energy gap material (262). In addition, the above-mentioned coating layer is N-type doped. South-gap material, and the upper cladding layer is a p-doped high-gap material. In the above active layer structure, the high-gap material (261) is indium aluminum nitride (InAIN), and the low-gap material (262) is Indium gallium nitride (inGaN), gallium nitride (GaN), or gallium nitride (A1GaN), and the lattice constants of the high-gap material and the low-gap material are within matched or threshold thicknesses. The cladding material (25) is indium aluminum nitride (hA1N), and its material lattice constant matches the upper cladding material (27), and the lower cladding layer ⑺) 17 200409203 and the η stress relief buffer layer ( 24) The crystal constants are matched to each other or within a threshold thickness. Because of the spirit of the present invention, it is to break through and improve the element structure limitation caused by the lattice mismatch of the traditional nitrogen compound element structure. The present invention can also be applied to the epitaxial structure of a nitride semi-conductor high electron mobility transistor. Please refer to the tenth figure, which is the epitaxial structure of nitride semiconductor high electron mobility transistor (30). The high electron mobility transistor structure has a base layer (31). The material of the base layer (31) can be sapphire (sapphire), gallium nitride (GaN) or silicon carbide (SiC). First, a nucleation layer (32) is formed on the nucleation layer (32), and then a buffer layer (33) is formed on the nucleation layer (32). The materials of the nucleation layer (32) and the buffer layer (33) may be respectively nitrided. Aluminum (Ai 趵 or gallium nitride (GaN). In the currently used embodiments, a material is gallium nitride (the channel layer (34) is formed on the buffer layer (33), and a high energy gap material The layer (36) is formed above the channel layer (34), and is made of aluminum gallium nitride (Ααυ). In some embodiments, an isolation is provided between the channel layer (34) and the high energy gap material layer (36). A space layer (35), whose material is aluminum gallium nitride (AlxGai-xN). The above-mentioned erbium energy gap material layer (%) is generally a doped region and the isolation layer (35) is an undoped region. In addition, please refer to the eleventh figure for a metastable high electron mobility transistor (40) formed by using the nitride semiconductor material of the present invention, which includes Bottom 18 200409203 Yun (41), the first stress relief layer (42), the second stress relief layer (43), and the nth stress relief buffer layer (44), where the number of layers n depends on the requirements and formation of the element The conditions are different. The material of the above-mentioned multiple stress release layers is indium aluminum gallium nitride ((AlyGawUruN) or indium gallium nitride (InxGai_xN)), where the indium content ratio X increases with the number of buffer layers. In addition, an indium gallium nitride channel layer (45) is formed on the n-th buffer layer, wherein the indium content ratio of the material of the channel layer is the same as or within the threshold thickness of the n-th buffer layer. Another high energy gap material layer (47 ) Is formed above the channel layer (45), and its material is indium aluminum nitride (ΙηχΑ1ΐ χΝ), and in some embodiments, there is an isolation between the channel layer (46) and the high energy gap material layer (47). A space layer (46) made of InxAhxN, wherein the high energy gap material layer (47) is generally a highly doped region and the isolation layer (occupies) is an undoped region; and Nitrided steel inscriptions (ΙηχΑ1ι-χΝ) of the high energy gap material layer (47) and the isolation layer (46) and their crystal lattices The matching of the constant with the lattice constant of the indium gallium nitride (inyGai_yN) of the channel layer (45) can be appropriately adjusted by controlling the proportion of indium content. Compared with the conventional nitride semiconductor high electron mobility transistor, The method of luminescence can effectively increase the indium content and channel thickness of the channel layer, thereby increasing the internal electron mobility and power. At the same time, due to the internal stress system of the buffer layer, it is released layer by layer, so material defects caused by changes in the indium content Mostly confined to the end of the base layer, it also allows the channel layer to be kept away from defects caused by stress release. 70% of stupid crystals grown on the dielectrically stable stress relief buffer layer using the present invention have fewer elements than conventional light-emitting diodes and high-speed transmission transistors. 19 200409203 The stress 'can effectively reduce the lattice entanglement of the element structure, improve the red quality, and enhance the element characteristics', which has already met the requirements of the invention patent, and is beneficial according to law. [Schematic description] Table 1 is a comparison of the characteristics of different semiconductor materials. The first figure is a conventional ELOG substrate program diagram. The second picture shows a conventional method of growing an EL0G substrate on a silicon carbide (SiC) substrate by a suspended growth method. The third picture is the theoretical difference between the three or five group nitrides (a) lattice size and spontaneous polarization (b) the relationship between spontaneous polarization and piezoelectric polarization. The fourth picture is (a) an aluminum gallium arsenide / gallium arsenide heterostructure (b) a two-dimensional electron cloud formed at the junction due to band bending. The fifth picture is (a) a traditional aluminum gallium arsenide / gallium arsenide HEMT and a (virtual) aluminum gallium arsenide / indium gallium arsenide p-HEMT. // The picture shows the indium aluminum arsenide / indium gallium arsenide heterojunction structure grown on the metastable buffer layer. The seventh image is a TEM cross-sectional image of a general metastable buffer layer. The eighth diagram is a schematic diagram of a conventional nitride semiconductor light emitting diode stupid structure. The ninth figure is a schematic view of the structure of a nitride semiconductor light emitting diode stupid crystal according to the present invention. The tenth figure is a conventional nitride semiconductor high electron mobility transistor stupid structure. The eleventh figure is a Japanese-Japanese structure diagram of the nitride semiconductor high electron mobility transistor 20 200409203 of the present invention. (Illustration of figure number) Mouse compound semiconductor light emitting diode structure 10 base layer 1 1 buffer layer 13 lower cladding layer 14 active layer high energy gap material 151 upper cladding layer 16 nitride semiconductor light emitting diode 20 base layer 21 first Stress relief buffer layer 22th nth stress relief buffer layer 24 Lower cladding layer 25 Active layer high energy gap material 261 Upper cladding layer 27 Nitride semiconductor high electron mobility electrical base layer 31 Buffer layer 33 Isolation layer 35 Contact layer 37 Nucleation Layer 12 Active layer 15 Active layer low energy gap material 152 First stress relief buffer layer 23 Active layer 26 Active layer low energy gap material 262 Crystal epitaxial structure 30 Nucleation layer 32 Channel layer 34 High energy gap material layer 36

Nitride semiconductor high electron mobility transistor epitaxial structure 40 base layer 41 21 200409203 first stress relief buffer layer 42th η stress relief buffer layer 44 isolation layer 46 second stress relief buffer layer 43 channel layer 45 high energy gap material layer 47 contact layer 48

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Claims (1)

Scope of patent application: 1. A stupid crystal growth method with a lUb compound metastable stress release layer, which mainly includes the Lvlongshe stress micro layer, and forms a gas compound semiconductor on the hybrid The element structure, which is exposed to this stress, is formed on the base material to form indium nitride and gallium nitride (Al "InxN), where" χ "can be between zero and one, and" y "can be between Between zero and one (〇 < y < 1). 2. As described in the § # Patent Fan Difficulty! Item—A method for Μ growth with a nitrogen compound-stable stress relief buffer layer, the substrate material f It can be gallium nitride (_, sapphire (secret), silicon (so, carbide), Sic, gallium (GaAs), and other semiconductor substrate materials. -3, as described in one of the scope of patent application Nitrogen compound metastable stress release layer 2 growth method, the number of stress buffer layers is secret gradient or two or more, and the top layer is the nth stress release buffer layer, and its material is nitrided fine ), Its indium content ratio Z is the highest.… 4. As described in the item M of the Homo Patent System—kind of money The material-steady-type stress relief buffer layer _growth ', its stress, the number of layers required for the buffer layer, and the thickness of each layer are finely adjusted from Mitsubishi's Tonglu. 5. If the scope of patent application As described in item i, a M growth method with a nitrogen compound-stable stress release layer, the transfer structure can be a] structure and a lower cladding layer and an upper cladding layer to form a light emitting diode. 6. The active layer as described in item 5 (the postal structure includes the necessary structural design required to form a nitride semiconductor device device. 200409203 7. The active layer structure as described in item 5 of the scope of patent application, is Heterojunction structure formed by overlapping multiple layer structures with different energy gaps, including-high energy gap material and-low energy gap material. 8. As described in item 5 of the scope of the patent application, the lower cladding layer is N-type doped And the upper cladding layer is a P-doped high energy gap material. 9. As described in item 5 of the scope of the patent application, the lower cladding material is indium aluminum nitride (top), and its material The lattice constants and the upper material are mutually opposite, and the The lattice constants of the embarrassment and the ηth stress relief buffer layer are matched to each other or within a threshold thickness. 1 10. If t, please outline ® 7th Lay-like main riding structure, whose high energy gap material is indium nitride and gallium ((AlyGai_y) 1-xInxN), the low-energy gap material is indium aluminum gallium nitride ((AlyGa y)) χΙΠχΝ) of different composition. 1 i. As described in the cap patent scope item! The M growth method of the stable stress relief buffer layer, the lattice constant of the material between the silk layer and each single layer is matched or within the threshold thickness. 2. As described in the application of the patent No. W-a kind of money compound M growth method of stable stress release buffer layer 'its silk layer and the lattice constant of each single material and the scope of patent applications! The stress relief layer described in the item above is usually equipped with a crystal lattice or within a threshold thickness. 13, such as the Chinese patent patents! In the item described above, a semiconductor device with a nitrogen compound metastable stress release buffer layer has a semiconductor device structure including a channel layer, a high energy gap material layer, and a contact layer to form a transistor device. Its material is nitride 4. As the scope of patent application! High energy gap material layer as described in item 3, 24 200409203 Indium aluminum (ImAh-xN). 15. There is a space layer between the channel layer and the high-energy material layer as described in item 13 of the patent application. The material is indium aluminum nitride (Inu). 16. As described in item 15 of the scope of the patent application, the lattice constant of the steel aluminum nitride (InU) of the high energy gap material layer and the isolation layer is far from the lattice constant of the channel layer indium gallium nitride (IriyGa ^ N). The properties can be properly adjusted by controlling the proportion of indium content. 25