CN111009584B - Lattice mismatched multi-junction solar cell and manufacturing method thereof - Google Patents

Lattice mismatched multi-junction solar cell and manufacturing method thereof Download PDF

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CN111009584B
CN111009584B CN201911269812.5A CN201911269812A CN111009584B CN 111009584 B CN111009584 B CN 111009584B CN 201911269812 A CN201911269812 A CN 201911269812A CN 111009584 B CN111009584 B CN 111009584B
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metamorphic buffer
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CN111009584A (en
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吴真龙
张海林
张策
朱鸿根
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Xiamen Changelight Co Ltd
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Abstract

The application provides a lattice mismatched multi-junction solar cell and a manufacturing method thereof, wherein the multi-junction solar cell comprises: the first sub-battery, the second sub-battery and the third sub-battery are positioned above the substrate; the first tunneling junction, the metamorphic buffer layer and the distributed Bragg reflection layer are positioned between the first sub-battery and the second sub-battery; a second tunneling junction between the second subcell and the third subcell; an ohmic contact layer over the third subcell; the lattice constant of the constituent layers increases in a direction along the first subcell toward the second subcell equal to the first lattice constant of the first subcell. According to the method, the third lattice constant of the component layer at the joint of the component layer and the first tunneling junction is larger than the first lattice constant of the first sub-battery, the epitaxial thickness of the buffer layer can be effectively reduced, and the epitaxial growth time is shortened.

Description

Lattice mismatched multi-junction solar cell and manufacturing method thereof
Technical Field
The application relates to the technical field of solar cell manufacturing, in particular to a lattice mismatched multi-junction solar cell and a manufacturing method thereof.
Background
The III-V group compound semiconductor solar cell is a clean energy cell with highest conversion efficiency, good high-temperature resistance and strong radiation resistance at present.
However, the conventional lattice-matched multi-junction solar cell does not fully utilize the solar spectrum, and the improvement of the photoelectric conversion efficiency is limited. The most effective way for improving the conversion efficiency of the solar cell is to improve the band gap matching degree of each sub-cell, but the change of the band gap of each sub-cell requires the change of the component proportion of ternary or even quaternary materials, which often causes lattice mismatch among the sub-cells to generate residual stress and dislocation, and influences the cell performance.
A metamorphic buffer layer (metamorphic buffer) is adopted in the epitaxial process of the mismatched material of the III-V family solar cell structure, so that the residual stress generated during the epitaxial process of the lattice mismatched material can be effectively released, and the extension of dislocation to an active region can be effectively blocked. In the prior art, the lattice constant of the metamorphic buffer layer is generally changed from the lattice constant of the first sub-cell connected with the metamorphic buffer layer to the lattice constant of the second sub-cell. However, this case easily results in a long growth time for epitaxial growth of mismatched materials, which is not favorable for scale industrialization, while on the other hand, when growing the metamorphic buffer layer, it is equivalent to heat treatment of the cell structure after epitaxial growth, and long-time heat treatment is unfavorable for device performance.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a lattice mismatched multi-junction solar cell and a method for fabricating the same, so as to reduce the epitaxial growth time of mismatched materials.
In a first aspect, an embodiment of the present application provides a lattice mismatched multi-junction solar cell, including:
the battery module comprises a substrate, a first sub battery positioned above the substrate, a second sub battery positioned above the first sub battery and at one side far away from the substrate, and a third sub battery positioned above the second sub battery and at one side far away from the substrate;
the second sub-battery is positioned between the first sub-battery and the second sub-battery, and sequentially comprises the following components along the direction that the first sub-battery points to the second sub-battery: the first tunneling junction, the metamorphic buffer layer and the distributed Bragg reflection layer;
a second tunneling junction between the second subcell and the third subcell;
the ohmic contact layer is positioned above the third sub-cell and on the side facing away from the second tunneling junction;
the metamorphic buffer layer comprises a first metamorphic buffer layer, a second metamorphic buffer layer and an overshoot layer;
the lattice constant of the first metamorphic buffer layer increases in a direction along the first subcell toward the second subcell;
the first metamorphic buffer layer has a third lattice constant at the junction with the first subcell; the third lattice constant is equal to or greater than the first lattice constant;
the first metamorphic buffer layer has a fourth lattice constant at a junction with the second metamorphic buffer layer;
the lattice constant of the second metamorphic buffer layer increases in a direction along the first subcell toward the second subcell;
the first mismatch rate of the second metamorphic buffer layer is less than the second mismatch rate of the first metamorphic buffer layer.
In combination with the first aspect, the present examples provide a first possible implementation manner of the first aspect, where a first lattice constant of the first sub-battery is smaller than a second lattice constant of the second sub-battery by 0.001 nm.
In combination with the first aspect, the present examples provide a second possible implementation manner of the first aspect, wherein a lattice constant of the first metamorphic buffer layer is linearly changed with respect to a thickness of the first metamorphic buffer layer in a direction along the first sub-cell toward the second sub-cell.
In combination with the first aspect, the present examples provide a third possible implementation manner of the first aspect, wherein, in a direction along the first sub-cell toward the second sub-cell, a lattice constant of the first metamorphic buffer layer is in a stepwise variation relationship with a variation in thickness of the first metamorphic buffer layer;
the first metamorphic buffer layer comprises a plurality of sub metamorphic buffer layers;
the thickness of the sub-metamorphic buffer layers is the same; and the difference of the lattice constants of the two adjacent sub-metamorphic buffer layers is the same.
In combination with the first aspect, the present examples provide a fourth possible implementation manner of the first aspect, wherein, in a direction along the first sub-cell toward the second sub-cell, a lattice constant of the second metamorphic buffer layer is linearly changed with respect to a thickness of the second metamorphic buffer layer.
In combination with the first aspect, the present examples provide a fifth possible implementation manner of the first aspect, wherein, in a direction along the first sub-cell toward the second sub-cell, a lattice constant of the second metamorphic buffer layer is in a stepwise change relationship with a change in thickness of the second metamorphic buffer layer;
the second metamorphic buffer layer comprises a plurality of second sub metamorphic buffer layers;
the thicknesses of the second sub-metamorphic buffer layers are the same; and the difference of the lattice constants of the two adjacent second sub-metamorphic buffer layers is the same.
In combination with the first aspect, the present examples provide a sixth possible implementation manner of the first aspect, where the overshoot layer has a fifth lattice constant; the fifth lattice constant is greater than the second lattice constant.
With reference to the first aspect, an embodiment of the present application provides a seventh possible implementation manner of the first aspect, where the substrate is a Ge substrate;
the first sub-battery is a Ge battery; the first lattice constant is 5.6577 nm;
the second sub-battery is an InGaAs battery; the range of the second lattice constant is 5.6587 nm-5.7748 nm;
the third sub-cell is an AlGaInP cell.
With reference to the seventh possible implementation manner of the first aspect, an example of the present application provides an eighth possible implementation manner of the first aspect, where the second sub-battery sequentially includes, from bottom to top: the back field layer, the base region of the P-type doped InGaAs layer, the emitter region of the N-type doped InGaAs layer and the window layer;
the back field layer is made of GaInP materials or AlGaAs materials; the window layer is made of AlGaInP material or AlInP material.
In a second aspect, an embodiment of the present application further provides a method for manufacturing a lattice-mismatched multi-junction solar cell, which is used to manufacture and form the lattice-mismatched multi-junction solar cell described in the first aspect, and the method for manufacturing a lattice-mismatched multi-junction solar cell includes:
providing a substrate;
forming a first sub-cell on a surface of the substrate;
forming a first tunneling junction, a metamorphic buffer layer and a distributed Bragg reflection layer on the surface of the first sub-battery, which is far away from the substrate;
forming a second sub-cell on the surface of the distributed Bragg reflection layer, which faces away from the first tunneling junction;
forming a second tunneling junction on the surface of the second sub-cell, which is far away from the distributed Bragg reflection layer;
forming a third sub-cell on the surface of the second tunneling junction facing away from the second sub-cell;
forming an ohmic contact layer on the surface of the third sub-cell, which faces away from the second tunneling junction;
the metamorphic buffer layer comprises a first metamorphic buffer layer, a second metamorphic buffer layer and an overshoot layer; the lattice constant of the first metamorphic buffer layer increases in a direction along the first subcell toward the second subcell; the third lattice constant of the first metamorphic buffer layer at the joint of the first metamorphic buffer layer and the first sub-battery is larger than or equal to the first lattice constant of the first sub-battery; the first metamorphic buffer layer has a fourth lattice constant at a junction with the second metamorphic buffer layer; the lattice constant of the second metamorphic buffer layer increases in a direction along the first subcell toward the second subcell; the first mismatch rate of the second metamorphic buffer layer is less than the second mismatch rate of the first metamorphic buffer layer.
The embodiment of the application provides a lattice mismatched multi-junction solar cell, which comprises: the solar cell comprises a substrate, a first sub cell positioned above the substrate, a second sub cell positioned above the first sub cell and deviating from one side of the substrate, and a third sub cell positioned above the second sub cell and deviating from one side of the substrate; the second sub-battery is positioned between the first sub-battery and the second sub-battery, and sequentially comprises the following components along the direction that the first sub-battery points to the second sub-battery: the first tunneling junction, the metamorphic buffer layer and the distributed Bragg reflection layer; a second tunneling junction between the second subcell and the third subcell; the ohmic contact layer is positioned above the third sub-cell and on the side away from the second tunneling junction; the metamorphic buffer layer comprises a first metamorphic buffer layer, a second metamorphic buffer layer and an overshoot layer; the lattice constant of the first metamorphic buffer layer increases in a direction along the first subcell toward the second subcell; the first metamorphic buffer layer has a third lattice constant at the junction with the first subcell; the third lattice constant is greater than or equal to the first lattice constant; the first metamorphic buffer layer has a fourth lattice constant at the junction with the second metamorphic buffer layer; the lattice constant of the second metamorphic buffer layer increases in a direction along the first subcell toward the second subcell; the first mismatch rate of the second metamorphic buffer layer is less than the second mismatch rate of the first metamorphic buffer layer. In the embodiment of the application, the initial value of the lattice constant of the first metamorphic buffer layer is increased by a jump variable on the basis of the first lattice constant of the first sub-battery, the lattice constant of the first metamorphic buffer layer is changed from being more than or equal to the first lattice constant, the dislocation density generated in the early period of the metamorphic buffer layer can be increased, the dislocation density is more uniformly distributed in the whole metamorphic buffer layer, the interaction among dislocations can be reduced, the threading dislocation defects caused by the dislocation density can be reduced, the dislocation change and the interaction of the buffer layer can be changed, the epitaxial thickness of the buffer layer can be effectively reduced, and the epitaxial growth time of a mismatched material can be reduced.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic diagram illustrating a lattice mismatched multi-junction solar cell according to an embodiment of the present application;
FIG. 2 is a graph showing a change in lattice constant of a first metamorphic buffer layer provided in an embodiment of the present application;
FIG. 3 is a graph showing a change in lattice constant of a second metamorphic buffer layer provided in an embodiment of the present application;
FIG. 4 is a graph showing a change in lattice constant of a third metamorphic buffer layer provided in an embodiment of the present application;
FIG. 5 is a graph showing a change in lattice constant of a fourth metamorphic buffer layer provided in an embodiment of the present application;
fig. 6 is a schematic flow chart illustrating a method for fabricating a lattice mismatched multi-junction solar cell according to an embodiment of the present disclosure.
Icon: 101, a substrate; 102, a first sub-cell; 103, a first tunneling junction; 104, a metamorphic buffer layer; 105, a distributed bragg reflector layer; 106, a second sub-cell; 107, a second tunneling junction; 108, a third sub-cell; 109, ohmic contact layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.
The current density of the traditional lattice-matched multi-junction battery top cell GaInP and the middle cell In0.01GaAs is far smaller than that of the bottom cell Ge, the solar spectrum is not fully utilized, and the improvement of the photoelectric conversion efficiency is limited. The most effective way to improve the conversion efficiency of the solar cell is to improve the band gap matching degree of each sub-cell, so as to more reasonably distribute the solar spectrum. Changing the band gap of each sub-cell requires changing the component proportion of ternary or even quaternary materials, which often causes lattice mismatch among sub-cells to generate residual stress and dislocation, and affects the cell performance.
A metamorphic buffer layer (metamorphic buffer) is adopted in the epitaxial process of the large mismatch material of the III-V family solar cell structure, so that the residual stress generated during the epitaxial process of the lattice mismatch material can be effectively released, and the extension of dislocation to an active region can be effectively blocked. The metamorphic buffer layer technique generally adopts a composition gradual change method or a composition step change method. The component gradual change method adopts component gradual change to ensure that the linear change of the lattice constant reaches the target lattice constant. The composition grading method is characterized in that on one hand, the composition is increased layer by layer to reach a target lattice constant, and on the other hand, each layer adopts the same composition, so that dislocation is pinned at the interface of each buffer layer and does not extend upwards to enter the active region of the battery. The number of layers, the grading variable of each layer and the thickness of the layers in the component grading method need to be optimized according to the degree of lattice mismatch. For epitaxial materials with larger lattice mismatch, during growth, more steps, smaller step variation of each layer and thicker layer thickness are often needed to better realize the effects of blocking dislocation and releasing stress of the metamorphic buffer layer.
In the prior art, whether a composition gradual change method or a composition step change method is adopted by the metamorphic buffer layer, the lattice constant of the first sub-battery is changed to reach the lattice constant of the second sub-battery. The rate at which the degree of lattice mismatch varies with growth thickness is defined as the mismatch rate. The mismatch rate is controlled to be kept at a slower rate, which results in more epitaxial source consumption and longer growth time, and is not beneficial to scale industrialization. If the epitaxial thickness of the buffer layer is reduced by increasing the rate of change of mismatch, increased dislocation density and residual stress can result, affecting device performance.
Based on this, embodiments of the present application provide a lattice mismatched multi-junction solar cell and a method for fabricating the same, which are described below by way of example.
For the understanding of the present embodiment, a lattice-mismatched multi-junction solar cell disclosed in the embodiments of the present application will be described in detail first. Fig. 1 is a schematic structural diagram of a lattice mismatched multi-junction solar cell, which includes a substrate 101, a first sub-cell 102 located above the substrate 101, a second sub-cell 106 located above the first sub-cell 102 and on a side away from the substrate 101, and a third sub-cell 108 located above the second sub-cell 106 and on a side away from the substrate 101;
located between the first sub-battery 102 and the second sub-battery 106, and sequentially including, along a direction in which the first sub-battery 102 points to the second sub-battery 106: a first tunnel junction 103, an metamorphic buffer layer 104, and a distributed bragg reflector layer 105;
a second tunnel junction 107 located between the second subcell 106 and the third subcell 108;
an ohmic contact layer 109 located over the third subcell 108 and on a side facing away from the second tunnel junction 107;
the metamorphic buffer layer 104 includes a first metamorphic buffer layer, a second metamorphic buffer layer, and an overshoot layer;
the first subcell 102 has a first lattice constant; the second sub-cell 106 has a second lattice constant;
the lattice constant of the first metamorphic buffer layer increases in the direction along the first subcell 102 towards the second subcell 106;
the first metamorphic buffer layer has a third lattice constant at the junction with the first subcell 102;
the third lattice constant is greater than or equal to the first lattice constant;
the first metamorphic buffer layer has a fourth lattice constant at the junction with the second metamorphic buffer layer;
the lattice constant of the second metamorphic buffer layer increases in the direction along the first subcell 102 towards the second subcell 106;
the first mismatch rate of the second metamorphic buffer layer is less than the second mismatch rate of the first metamorphic buffer layer.
In the embodiment of the present application, the first metamorphic buffer layer of the metamorphic buffer layers 104 adds a transition constant to the initial value of the initial change in lattice constant of the first subcell 102. That is, in the direction along the first sub-cell 102 towards the second sub-cell 106, the junction of the first metamorphic buffer layer to the first sub-cell 102 does not increase from the first lattice constant, and the junction of the first metamorphic buffer layer to the first sub-cell 102 increases from the third lattice constant that is greater than or equal to the first lattice constant.
In a specific implementation, the substrate 101 is a Ge substrate; the lattice-mismatched multi-junction solar cell is grown on a Ge substrate by adopting a metal organic chemical vapor phase epitaxy deposition method.
The first sub-cell 102 is a bottom cell, the second sub-cell 106 is a middle cell, and the third sub-cell 108 is a top cell.
The first subcell 102 located over the substrate 101 is typically a Ge cell, the first lattice constant of the first subcell 102 being 5.6577 nm.
Phosphorus diffusion is performed on the P-type Ge substrate 101 to obtain an N-type emitter region, form the Pn junction of the first subcell 102, and serve as a nucleation layer by growing an AlGaInP layer on top of the P-type Ge substrate 101 that matches the lattice constant of the substrate 101 and as a window layer for the first subcell 102.
The second subcell 106 is typically an InGaAs cell, and the second lattice constant of the second subcell 106 is related to the In component, typically the second lattice constant ranges from 5.6587nm to 5.7748 nm.
The third subcell 108 is typically an AlGaInP cell.
The first lattice constant is at least 0.001nm less than the second lattice constant.
The material of the metamorphic buffer layer 104 may be chosen from AlGaInAs or AlGaInP.
In the direction pointing to the second sub-cell 106 along the first sub-cell 102, the lattice constant of the first metamorphic buffer layer and the thickness of the first metamorphic buffer layer may be in a linear variation relationship or a step variation relationship; the lattice constant of the second metamorphic buffer layer and the thickness of the second metamorphic buffer layer can be in a linear variation relationship or a step variation relationship. Therefore, in a specific implementation, the change of the lattice constant of the metamorphic buffer layer can include the following four cases:
in the first case, in a direction along the first sub-cell 102 toward the second sub-cell 106, the lattice constant of the first metamorphic buffer layer may be linearly varied with respect to the thickness of the first metamorphic buffer layer, and the lattice constant of the second metamorphic buffer layer may be linearly varied with respect to the thickness of the second metamorphic buffer layer.
In the variation of the lattice constant of the first metamorphic buffer layer as shown in fig. 2, it is shown that the third lattice constant at the junction of the first metamorphic buffer layer and the first sub-cell 102 is greater than the first lattice constant, and the lattice constant of the first metamorphic buffer layer increases linearly with the thickness of the first metamorphic buffer layer, and the junction of the first metamorphic buffer layer and the second metamorphic buffer layer has the same lattice constant, i.e., the fourth lattice constant. The lattice constant of the second metamorphic buffer layer increases linearly with the thickness of the second metamorphic buffer layer from the fourth lattice constant, and the first mismatch rate of the second metamorphic buffer layer is smaller than the second mismatch rate of the first metamorphic buffer layer, that is, the rate of increase of the lattice constant with the thickness in the second metamorphic buffer layer is smaller than the rate of increase of the lattice constant with the thickness in the first metamorphic buffer layer.
In the second case, in a direction along the first sub-cell 102 toward the second sub-cell 106, the lattice constant of the first metamorphic buffer layer may have a stepwise variation relationship with the thickness of the first metamorphic buffer layer, and the lattice constant of the second metamorphic buffer layer may have a linear variation relationship with the thickness of the second metamorphic buffer layer.
Wherein, the first metamorphic buffer layer may include a plurality of first sub metamorphic buffer layers, such as L1 layer, L2 layer, L3 layer … … Lx layer, and correspondingly, for each first sub metamorphic buffer layer, its lattice constant may be aL1, aL2, aL3 … … aLx; wherein aLa is the lattice constant of the first metamorphic buffer layer at epitaxy to thickness a. The thicknesses of the first sub metamorphic buffer layers are the same, and the difference values of the lattice constants of two adjacent first sub metamorphic buffer layers are the same.
In the variation graph of the lattice constant of the second type metamorphic buffer layer shown in fig. 3, it is shown that the third lattice constant at the junction of the first metamorphic buffer layer and the first sub-cell 102 is larger than the first lattice constant, and the lattice constant of the first metamorphic buffer layer varies stepwise with the thickness of the first metamorphic buffer layer.
In the first metamorphic buffer layer, the first sub metamorphic buffer layer may be an L1 layer, an L2 layer, an L3 layer, and an L4 layer, whose lattice constants are aL1, aL2, aL3, and aL4, respectively, aL1 being greater than the first lattice constant, and aL1 < aL2 < aL3 < aL 4.
The junction of the first metamorphic buffer layer and the second metamorphic buffer layer has the same lattice constant, i.e., a fourth lattice constant, the lattice constant of the second metamorphic buffer layer increases linearly with the thickness of the second metamorphic buffer layer from aL4, and the first mismatch rate of the second metamorphic buffer layer is smaller than the second mismatch rate of the first metamorphic buffer layer.
In a third case, in a direction along the first sub-cell 102 toward the second sub-cell 106, the lattice constant of the first metamorphic buffer layer may be in a linear variation relationship with the thickness of the first metamorphic buffer layer, and the lattice constant of the second metamorphic buffer layer may be in a stepwise variation relationship with the thickness of the second metamorphic buffer layer.
Wherein, the second metamorphic buffer layer may include a plurality of second sub metamorphic buffer layers, specifically, the second sub metamorphic buffer layers may be L1 layer, L2 layer, L3 layer … … Lx layer, correspondingly, for each second sub metamorphic buffer layer, its lattice constant may be aL1, aL2, aL3 … … aLx; wherein aLa is the lattice constant of the second metamorphic buffer layer at epitaxy to thickness a. The thicknesses of the second sub metamorphic buffer layers are the same, and the difference values of the lattice constants of two adjacent second sub metamorphic buffer layers are the same.
In the variation of the lattice constant of the third metamorphic buffer layer shown in fig. 4, it is shown that the third lattice constant at the junction of the first metamorphic buffer layer and the first sub-cell 102 is greater than the first lattice constant, and the lattice constant of the first metamorphic buffer layer increases linearly with the thickness of the first metamorphic buffer layer.
In the second metamorphic buffer layer, the second sub metamorphic buffer layer may be an L1 layer, an L2 layer, an L3 layer, and an L4 layer, whose lattice constants are aL1, aL2, aL3, and aL4, respectively, and aL1 < aL2 < aL3 < aL 4.
The junction of the first metamorphic buffer layer and the second metamorphic buffer layer has the same lattice constant, i.e., the fourth lattice constant, and thus the aL1 has the same magnitude as the fourth lattice constant. The lattice constant of the second metamorphic buffer layer increases stepwise with the thickness of the second metamorphic buffer layer starting from aL1 until the aL4 has the same magnitude as the second lattice constant.
In a fourth case, in a direction along the first sub-cell 102 toward the second sub-cell 106, the lattice constant of the first metamorphic buffer layer may be in a stepwise varying relationship with the thickness of the first metamorphic buffer layer, and the lattice constant of the second metamorphic buffer layer may be in a stepwise varying relationship with the thickness of the second metamorphic buffer layer.
Wherein, the first metamorphic buffer layer may include a plurality of first sub metamorphic buffer layers, such as L1 layer, L2 layer, L3 layer … … Ln layer, and correspondingly, for each first sub metamorphic buffer layer, its lattice constant may be aL1, aL2, aL3 … … aLn; wherein aLa is the lattice constant of the first metamorphic buffer layer at epitaxy to thickness a. The thicknesses of the first sub metamorphic buffer layers are the same, and the difference values of the lattice constants of two adjacent first sub metamorphic buffer layers are the same.
The second metamorphic buffer layer may include a plurality of second sub metamorphic buffer layers, and particularly the second sub metamorphic buffer layers may be Ln+1Layer, Ln+2Layer, Ln+3Layer … … LxThe layer, correspondingly, for each second sub-metamorphic buffer layer, may have a lattice constant aLn+1、aLn+2、aLn+3……aLx. The thicknesses of the second sub metamorphic buffer layers are the same, and the difference values of the lattice constants of two adjacent second sub metamorphic buffer layers are the same.
And the first mismatch rate of the second metamorphic buffer layer is less than the second mismatch rate of the first metamorphic buffer layer.
In the variation graph of the lattice constant of the fourth metamorphic buffer layer shown in fig. 5, it is shown that the third lattice constant at the junction of the first metamorphic buffer layer and the first sub-cell 102 is larger than the first lattice constant, and the lattice constant of the first metamorphic buffer layer varies stepwise with the thickness of the first metamorphic buffer layer.
Among the first metamorphic buffer layers, the first sub metamorphic buffer layer may be an L1 layer, an L2 layer, an L3 layer, and an L4 layer, whose lattice constants are aL1, aL2, aL3, and aL4, respectively, aL1 being greater than the first lattice constant, and aL1 < aL2 < aL3 < aL 4.
The junction of the first metamorphic buffer layer and the second metamorphic buffer layer has the same lattice constant, i.e., a fourth lattice constant, and the lattice constant of the second metamorphic buffer layer increases linearly with the thickness of the second metamorphic buffer layer from the fourth lattice constant.
In the second metamorphic buffer layer, the second sub metamorphic buffer layer may be an L5 layer, an L6 layer, an L7 layer, and an L8 layer, whose lattice constants are aL5, aL6, aL7, and aL8, respectively, aL5 ═ aL4, and aL5 < aL6 < aL7 < aL 8.
The lattice constant of the second metamorphic buffer layer increases stepwise with the thickness of the second metamorphic buffer layer starting from aL5 until the aL4 has the same magnitude as the second lattice constant.
In a specific implementation, the overshoot layer in the metamorphic buffer layer 104 has a fifth lattice constant; the fifth lattice constant is greater than the second lattice constant.
In a specific implementation, the N-type layer of the first tunnel junction 103 is an N-type GaAs material or an N-type GaInP material, and the P-type layer of the first tunnel junction 103 is a P-type AlGaAs material. Wherein the N-type and P-type doping respectively adopt Si and C doping.
In a specific implementation, the first layer material of the distributed bragg reflector layer 105 is AlxInzGaAs; the second layer of the distributed bragg reflector 105 is made of AlyInzGaAs; wherein x < y < 1,0.01 < z < 0.03. The two layers of materials are alternately grown for n periods, wherein n is less than or equal to 3 and less than or equal to 30.
In a specific implementation, the second sub-battery 106 sequentially includes, from bottom to top: the back field layer, the base region of the P-type doped InGaAs layer, the emitter region of the N-type doped InGaAs layer and the window layer;
the back field layer is made of GaInP material or AlGaAs material; the window layer is made of AlGaInP material or AlInP material.
In a specific implementation, the third sub-battery 108 sequentially includes, from bottom to top: AlGaInP back field layer, P-type doped AlGaInP or GaInP layer base region, N-type doped AlGaInP or GaInP layer emitter region and window layer, and AlInP window layer.
The N-type layer of the second tunnel junction 107 located between the second subcell 106 and the third subcell 108 is an N-type InGaAs or N-type GaInP material; the P-type layer of the second tunnel junction 107 is an AlInGaAs material. Wherein, the N type and the P type doping adopt Si and C doping respectively.
The N-type contact layer forming the ohmic contact layer 109 with the electrode is InGaAs material.
The embodiment of the present application further provides a method for manufacturing a lattice-mismatched multi-junction solar cell, and as shown in the flowchart diagram of the method for manufacturing a lattice-mismatched multi-junction solar cell in fig. 6, the method includes the following steps:
s601: a substrate is provided.
S602: a first subcell is formed on a surface of the substrate.
S603: and forming a first tunneling junction, a metamorphic buffer layer and a distributed Bragg reflection layer on the surface of the first sub-cell, which faces away from the substrate.
S604: and forming a second sub-cell on the surface of the distributed Bragg reflection layer, which faces away from the first tunneling junction.
S605: and forming a second tunneling junction on the surface of the second sub-cell, which faces away from the distributed Bragg reflection layer.
S606: and forming a third sub-cell on the surface of the second tunneling junction, which faces away from the second sub-cell.
S607: and forming an ohmic contact layer on the surface of the third sub-cell, which faces away from the second tunneling junction.
In step S601, the substrate is typically a Ge material. The lattice-mismatched multi-junction solar cell provided in the embodiment of the application is generally formed by growing on a Ge substrate by a Metal Organic Chemical Vapor Deposition (MOCVD) method.
In step S602, phosphorus diffusion is performed on the P-type Ge substrate to obtain an N-type emitter region, which forms a PN junction of the first subcell, and an AlGaInP layer that matches the lattice constant of the substrate is grown on the P-type Ge substrate as a nucleation layer and as a window layer of the first subcell.
The first subcell is formed on the substrate surface, so the first subcell is a bottom cell. The first subcell is typically a Ge cell having a PN junction composed of a material with a first lattice constant. The first lattice constant of the first subcell is 5.6577 nm.
In step S603, growing GaAs or GaInP as an N-type layer of the first tunnel junction on a surface of the first sub-cell facing away from the substrate; AlGaAs is grown on the surface of the first subcell facing away from the substrate as a P-type layer of the first tunnel junction. Wherein the N-type and P-type doping respectively adopt Si and C doping.
The material of the metamorphic buffer layer can be AlGaInAs or AlGaInP.
The metamorphic buffer layer comprises a first metamorphic buffer layer, a second metamorphic buffer layer and an overshoot layer.
The lattice constant of the first metamorphic buffer layer increases in a direction along the first subcell toward the second subcell; the third lattice constant of the first metamorphic buffer layer at the joint of the first metamorphic buffer layer and the first sub-battery is larger than or equal to the first lattice constant of the first sub-battery; the first metamorphic buffer layer has a fourth lattice constant at the junction with the second metamorphic buffer layer; the lattice constant of the second metamorphic buffer layer increases in a direction along the first subcell toward the second subcell; the first mismatch rate of the second metamorphic buffer layer is less than the second mismatch rate of the first metamorphic buffer layer.
The lattice constant of the first metamorphic buffer layer is in a linear change relation with the thickness of the first metamorphic buffer layer in the direction along the first sub-battery pointing to the second sub-battery.
Or in the direction pointing to the second sub-battery along the first sub-battery, the lattice constant of the first metamorphic buffer layer and the change of the thickness of the first metamorphic buffer layer are in a step change relationship; the first metamorphic buffer layer comprises a plurality of sub metamorphic buffer layers; the thickness of the sub-metamorphic buffer layers is the same; the difference of the lattice constants of the two adjacent sub-metamorphic buffer layers is the same.
The lattice constant of the overshoot layer is larger than that of the second sub-cell; the lattice parameter of the template layer is equal to the lattice parameter of the second subcell.
When the distributed Bragg reflection layer is grown, the first layer is made of AlxInzGaAs, the second layer is made of AlyInzGaAs, wherein x is more than or equal to 0 and less than or equal to y is less than or equal to 1, and z is more than or equal to 0.01 and less than or equal to 0.03. The two layers of materials are alternately grown for n periods, wherein n is less than or equal to 3 and less than or equal to 30.
In step S604, the second sub-battery is disposed between the first sub-battery and the third sub-battery, so the second sub-battery is a middle battery. The second subcell is typically an InGaAs cell, the second lattice constant of the second subcell is associated with the In component, and the second lattice constant of the second subcell ranges from 5.6573nm to 5.7748 nm.
The second subcell has a pn junction of a material having a second lattice constant.
The first lattice constant of the first subcell is at least 0.001nm less than the second lattice constant of the second subcell.
The second sub-battery comprises from bottom to top: the back field layer, the base region of the P-type doped InGaAs layer, the emitter region of the N-type doped InGaAs layer and the window layer.
The back field layer is made of GaInP material or AlGaAs material.
The window layer is made of AlGaInP material or AlInP material.
In step S605, an N-type InGaAs or an N-type GaInP is grown on the surface of the second sub-cell away from the distributed bragg reflector as an N-type layer of the second tunnel junction, and a P-type AlInGaAs is grown as a P-type layer of the second tunnel junction. Wherein the N-type and P-type doping respectively adopt Si and C doping.
In step S606, the third sub-battery sequentially includes, from bottom to top: AlGaInP back field layer, P-type doped AlGaInP or GaInP layer base region, N-type doped AlGaInP or GaInP layer emitter region and window layer, and AlInP window layer.
In step S607, an InGaAs layer is finally grown as an N-type ohmic contact layer forming ohmic contact with the electrode.
In the embodiment of the application, the initial value of the lattice constant of the first metamorphic buffer layer is added with a jump variable on the basis of the first lattice constant of the first sub-battery, so that the lattice constant of the first metamorphic buffer layer starts to change on the basis of being more than or equal to the first lattice constant, the epitaxial thickness of the buffer layer can be effectively reduced, and the epitaxial growth time of mismatched materials can be further reduced.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Finally, it should be noted that: the above-mentioned embodiments are only specific embodiments of the present application, and are used for illustrating the technical solutions of the present application, but not limiting the same, and the scope of the present application is not limited thereto, and although the present application is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope disclosed in the present application; such modifications, changes or substitutions do not depart from the spirit and scope of the exemplary embodiments of the present application, and are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. A lattice mismatched multi-junction solar cell, comprising:
the battery module comprises a substrate, a first sub battery positioned above the substrate, a second sub battery positioned above the first sub battery and at one side far away from the substrate, and a third sub battery positioned above the second sub battery and at one side far away from the substrate;
the second sub-battery is positioned between the first sub-battery and the second sub-battery, and sequentially comprises the following components along the direction that the first sub-battery points to the second sub-battery: the first tunneling junction, the metamorphic buffer layer and the distributed Bragg reflection layer;
a second tunneling junction between the second subcell and the third subcell;
the ohmic contact layer is positioned above the third sub-cell and on the side facing away from the second tunneling junction;
the first subcell has a first lattice constant; the second sub-cell has a second lattice constant;
the metamorphic buffer layer comprises a first metamorphic buffer layer, a second metamorphic buffer layer and an overshoot layer;
the lattice constant of the first metamorphic buffer layer increases in a direction along the first subcell toward the second subcell;
the first metamorphic buffer layer has a third lattice constant at the junction with the first subcell; the third lattice constant is equal to or greater than the first lattice constant;
the first metamorphic buffer layer has a fourth lattice constant at a junction with the second metamorphic buffer layer;
the lattice constant of the second metamorphic buffer layer increases in a direction along the first subcell toward the second subcell;
the first mismatch rate of the second metamorphic buffer layer is less than the second mismatch rate of the first metamorphic buffer layer.
2. The lattice-mismatched multijunction solar cell of claim 1, wherein:
the first lattice constant of the first subcell is at least 0.001nm less than the second lattice constant of the second subcell.
3. The lattice-mismatched multijunction solar cell of claim 1, wherein:
the lattice constant of the first metamorphic buffer layer and the thickness of the first metamorphic buffer layer are in a linear change relationship in the direction along which the first sub-battery points to the second sub-battery.
4. The lattice-mismatched multijunction solar cell of claim 1, wherein:
in the direction along which the first sub-battery points to the second sub-battery, the lattice constant of the first metamorphic buffer layer is in a step change relationship with the change of the thickness of the first metamorphic buffer layer;
the first metamorphic buffer layer comprises a plurality of first sub metamorphic buffer layers;
the thicknesses of the first sub-metamorphic buffer layers are the same; the difference of the lattice constants of the two adjacent first sub-metamorphic buffer layers is the same.
5. The lattice-mismatched multijunction solar cell of claim 1, wherein:
the lattice constant of the second metamorphic buffer layer and the thickness of the second metamorphic buffer layer are in a linear change relationship in the direction along which the first sub-battery points to the second sub-battery.
6. The lattice-mismatched multijunction solar cell of claim 1, wherein:
in the direction along which the first sub-battery points to the second sub-battery, the lattice constant of the second metamorphic buffer layer is in a step change relationship with the change of the thickness of the second metamorphic buffer layer;
the second metamorphic buffer layer comprises a plurality of second sub metamorphic buffer layers;
the thicknesses of the second sub-metamorphic buffer layers are the same; and the difference of the lattice constants of the two adjacent second sub-metamorphic buffer layers is the same.
7. The lattice-mismatched multijunction solar cell of claim 1, wherein:
the overshoot layer has a fifth lattice constant; the fifth lattice constant is greater than the second lattice constant.
8. The lattice mismatched multijunction solar cell of claim 1,
the substrate is a Ge substrate;
the first sub-battery is a Ge battery; the first lattice constant is 5.6577 nm;
the second sub-battery is an InGaAs battery; the range of the second lattice constant is 5.6587 nm-5.7748 nm;
the third sub-cell is an AlGaInP cell.
9. The lattice-mismatched multijunction solar cell of claim 8, wherein:
the second sub-battery comprises from bottom to top: the back field layer, the base region of the P-type doped InGaAs layer, the emitter region of the N-type doped InGaAs layer and the window layer;
the back field layer is made of GaInP materials or AlGaAs materials; the window layer is made of AlGaInP material or AlInP material.
10. A method of fabricating a lattice-mismatched multi-junction solar cell for forming the lattice-mismatched multi-junction solar cell of claim 1, the method comprising:
providing a substrate;
forming a first sub-cell on a surface of the substrate;
forming a first tunneling junction, a metamorphic buffer layer and a distributed Bragg reflection layer on the surface of the first sub-battery, which is far away from the substrate;
forming a second sub-cell on the surface of the distributed Bragg reflection layer, which faces away from the first tunneling junction;
forming a second tunneling junction on the surface of the second sub-cell, which is far away from the distributed Bragg reflection layer;
forming a third sub-cell on the surface of the second tunneling junction facing away from the second sub-cell;
forming an ohmic contact layer on the surface of the third sub-cell, which faces away from the second tunneling junction;
the metamorphic buffer layer comprises a first metamorphic buffer layer, a second metamorphic buffer layer and an overshoot layer; the lattice constant of the first metamorphic buffer layer increases in a direction along the first subcell toward the second subcell; the third lattice constant of the first metamorphic buffer layer at the joint of the first metamorphic buffer layer and the first sub-battery is larger than or equal to the first lattice constant of the first sub-battery; the first metamorphic buffer layer has a fourth lattice constant at a junction with the second metamorphic buffer layer; the lattice constant of the second metamorphic buffer layer increases in a direction along the first subcell toward the second subcell; the first mismatch rate of the second metamorphic buffer layer is less than the second mismatch rate of the first metamorphic buffer layer.
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